Semiconductor module and semiconductor device

Abstract

The invention provides a semiconductor module and a semiconductor device. The semiconductor module comprises a first heat conduction substrate, a chip, a conductive terminal, a plastic packaging layer, a first heat dissipation substrate and a second heat dissipation substrate. The chip is mounted on one side of the first heat conduction substrate; the chip includes an electrode. The conductive terminal and the chip are located on the same side of the first heat conduction substrate and are electrically connected with the electrode. The plastic packaging layer wraps the chip, the first heat conduction substrate and the conductive terminals, and the end parts of the conductive terminals are exposed from the side surface of the plastic packaging layer. The first heat dissipation substrate is located on the side, away from the chip, of the first heat conduction substrate and comprises a first substrate body and a plurality of first heat dissipation parts, and the first heat dissipation parts are located on the side, away from the chip, of the first substrate body and connected with the first substrate body. The second heat dissipation substrate is located on the side, away from the first heat conduction substrate, of the chip and comprises a second substrate body and a plurality of heat dissipation parts, and the second heat dissipation parts are located on the side, away from the chip, of the second substrate body and connected with the second substrate body.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a semiconductor module and semiconductor device. Background Technology

[0002] Semiconductor devices such as IGBTs (Insulated Gate Bipolar Transistors) include a copper substrate, a DBC (Directed Bonding Copper) substrate soldered onto the copper substrate, a chip mounted on the DBC substrate, and a heat sink located on the side of the copper substrate away from the chip.

[0003] Existing semiconductor devices have poor heat dissipation, which affects their performance. Summary of the Invention

[0004] This application provides a semiconductor module and a semiconductor device.

[0005] A first aspect of this application provides a semiconductor module. The semiconductor module includes:

[0006] First thermally conductive substrate;

[0007] A chip is mounted on one side of the first thermally conductive substrate; the chip includes electrodes.

[0008] The conductive terminal is located on the same side of the first thermally conductive substrate as the chip and is electrically connected to the electrode;

[0009] A molding compound covers the chip, the first thermally conductive substrate, and the conductive terminal, with the ends of the conductive terminals exposed from the side of the molding compound.

[0010] The first heat dissipation substrate is located on the side of the first thermal conductive substrate away from the chip, and includes a first substrate body and a plurality of first heat dissipation parts. The plurality of first heat dissipation parts are located on the side of the first substrate body away from the chip and are connected to the first substrate body.

[0011] The second heat dissipation substrate is located on the side of the chip away from the first heat-conducting substrate, and includes a second substrate body and a plurality of heat dissipation parts. The plurality of second heat dissipation parts are located on the side of the second substrate body away from the chip and are connected to the second substrate body.

[0012] In one embodiment, the semiconductor module further includes a first graphite material layer located between the first thermally conductive substrate and the first heat-dissipating substrate.

[0013] In one embodiment, the graphite material layer is made of graphite nanosheets; and / or,

[0014] The molding layer encapsulates the first graphite material layer.

[0015] In one embodiment, the semiconductor module further includes a connector that connects the first heat dissipation substrate, the second heat dissipation substrate, and a structure located between the first heat dissipation substrate and the second heat dissipation substrate.

[0016] In one embodiment, the semiconductor module further includes a flexible support layer located between the chip and the second heat dissipation substrate.

[0017] In one embodiment, the semiconductor module further includes a second thermally conductive substrate and a second graphite material layer; the second thermally conductive substrate is located between the second heat-dissipating substrate and the chip, and the molding compound encapsulates the second thermally conductive substrate; the second graphite material layer is located between the second thermally conductive substrate and the second heat-dissipating substrate; and / or,

[0018] The semiconductor module is an IGBT module.

[0019] In one embodiment, the semiconductor module further includes a second thermally conductive substrate and a flexible support layer. The second thermally conductive substrate is located between the chip and the second heat dissipation substrate, and the flexible support layer is located between the second thermally conductive substrate and the chip. The flexible support layer includes a plurality of spaced flexible support blocks, each of which is made of conductive material. The second thermally conductive substrate includes an insulating layer and a conductive layer located on the side of the insulating layer facing the chip. The conductive layer includes a plurality of conductive connections. The flexible support blocks are electrically connected to the conductive connections.

[0020] The semiconductor module includes at least two chips, and the electrodes of the at least two chips are electrically connected to the flexible support block, so as to be electrically connected through the flexible support block and the conductive connection portion.

[0021] In one embodiment, the conductive terminal is electrically connected to the electrodes of the chip via the flexible support block and the conductive connection portion; or, the conductive terminal is electrically connected to the electrodes of the chip via a bonding wire.

[0022] A second aspect of this application provides a semiconductor device. The semiconductor device includes:

[0023] The aforementioned semiconductor module;

[0024] The first heat sink has a first cavity through which refrigerant flows, a first inlet communicating with the first cavity, and a first outlet communicating with the first cavity; the first heat sink is located on the side of the first substrate body away from the chip and is connected to the first substrate body, and the first heat dissipation part extends into the first cavity.

[0025] The second heat sink has a second cavity through which the refrigerant flows, a second inlet communicating with the second cavity, and a second outlet communicating with the second cavity; the second heat sink is located on the side of the second substrate body away from the chip and is connected to the second substrate body, and the second heat dissipation part extends into the second cavity.

[0026] In one embodiment, the first heat sink includes a first plate portion facing the first substrate body; the first plate portion is provided with a first opening communicating with the first cavity, and the plurality of first heat dissipation portions extend into the first cavity through the same first opening; or, the first plate portion is provided with a plurality of first through holes, and each of the first heat dissipation portions extends into the first cavity through one of the first through holes.

[0027] The second heat sink includes a second plate portion facing the second substrate body; the second plate portion is provided with a second opening communicating with the second cavity, and the plurality of second heat dissipation portions extend into the second cavity through the same second opening; or, the second plate portion is provided with a plurality of second through holes, and each second heat dissipation portion extends into the second cavity through one of the second through holes.

[0028] The semiconductor module and semiconductor device provided in this application embodiment, by providing a first heat dissipation substrate on the side of the first thermally conductive substrate away from the chip and a second heat dissipation substrate on the side of the chip away from the first thermally conductive substrate, achieve better heat dissipation on both sides of the semiconductor module, thereby improving the heat dissipation efficiency of the semiconductor module. The ends of the conductive terminals are exposed from the side of the molding layer, without affecting the arrangement of the first and second heat dissipation substrates. The first heat dissipation substrate includes a first substrate body and a plurality of first heat dissipation parts connected to the first substrate, and the second heat dissipation substrate includes a second substrate body and a plurality of second heat dissipation parts connected to the second substrate body. Both the first and second heat dissipation substrates can be connected to a heat sink, and the first and second heat dissipation parts can extend into the cavity of the heat sink through which the liquid refrigerant flows, that is, the first and second heat dissipation parts are in direct contact with the liquid refrigerant, which can further effectively improve the heat dissipation effect of the semiconductor module. Thus, the semiconductor module can integrate more chips or chips with greater current capacity, which is conducive to the development of semiconductor modules towards high power density devices. Attached Figure Description

[0029] Figure 1This is a three-dimensional structural diagram of a semiconductor module provided in an exemplary embodiment of this application;

[0030] Figure 2 This is a three-dimensional exploded view of a semiconductor module provided in an exemplary embodiment of this application;

[0031] Figure 3 yes Figure 1 The semiconductor module shown is a cross-sectional view obtained by cutting it along AA;

[0032] Figure 4 yes Figure 1 Another cross-sectional view obtained by cutting the semiconductor module along AA;

[0033] Figure 5 This is a cross-sectional view of a semiconductor device provided in an exemplary embodiment of this application;

[0034] Figure 6 This is a cross-sectional view of a semiconductor device provided in another exemplary embodiment of this application. Specific Implementation

[0035] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0036] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0037] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0038] This application provides a semiconductor module. For example... Figures 1 to 3 As shown, the semiconductor module includes a first thermally conductive substrate 10, a chip 20, a conductive terminal 30, a molding compound 40, a first heat dissipation substrate 50, and a second heat dissipation substrate 60.

[0039] The chip 20 is mounted on one side of the first thermally conductive substrate 10; the chip 20 includes electrodes. The conductive terminal 30 is located on the same side of the first thermally conductive substrate 10 as the chip 20 and is electrically connected to the electrodes of the chip 20. The molding compound 40 covers the chip 20, the first thermally conductive substrate 10, and the conductive terminal 30, with the end of the conductive terminal 30 exposed from the side of the molding compound 40. The first heat dissipation substrate 50 is located on the side of the first thermally conductive substrate 10 away from the chip 20, and includes a first substrate body 51 and a plurality of first heat dissipation portions 52, the plurality of first heat dissipation portions 52 being located on the side of the first substrate body 51 away from the chip 20 and connected to the first substrate body 51. The second heat dissipation substrate 60 is located on the side of the chip 20 away from the first thermally conductive substrate 10, and includes a second substrate body 61 and a plurality of second heat dissipation portions 62, the plurality of second heat dissipation portions 62 being located on the side of the second substrate body 61 away from the chip 20 and connected to the second substrate body 61.

[0040] The semiconductor module provided in this application embodiment, by providing a first heat dissipation substrate 50 on the side of the first thermally conductive substrate 10 away from the chip 20 and a second heat dissipation substrate 60 on the side of the chip 20 away from the first thermally conductive substrate 10, achieves better heat dissipation on both sides of the semiconductor module, thereby improving the heat dissipation efficiency of the semiconductor module; the ends of the conductive terminals 30 are exposed from the side of the molding compound 40, without affecting the arrangement of the first heat dissipation substrate 50 and the second heat dissipation substrate 60; the first heat dissipation substrate 50 includes a first substrate body 51 and a plurality of first heat dissipation portions 52 connected to the first substrate 51, the second... The heat dissipation substrate 60 includes a second substrate body 61 and a plurality of second heat dissipation portions 62 connected to the second substrate body 61. Both the first heat dissipation substrate 50 and the second heat dissipation substrate 60 can be connected to a heat sink, and the first heat dissipation portion 52 and the second heat dissipation portion 62 can extend into the cavity of the heat sink through which the liquid refrigerant flows. That is, the first heat dissipation portion 52 and the second heat dissipation portion 62 are in direct contact with the liquid refrigerant, which can further effectively improve the heat dissipation effect of the semiconductor module. The semiconductor module can integrate more chips or chips with higher current capability, which is conducive to the development of semiconductor modules towards high power density devices.

[0041] In one embodiment, such as Figure 3 As shown, the first thermally conductive substrate 10 includes a first insulating layer 11, a first metal layer 12 located on the side of the first insulating layer 11 away from the first heat dissipation substrate 50, and a second metal layer 13 located on the side of the first insulating layer 11 facing the first heat dissipation substrate 50. In some embodiments, the material of the first insulating layer 11 may be silicon nitride, and the materials of the first metal layer 12 and the second metal layer 13 may be copper. Thus, the first thermally conductive substrate 10 has a better thermal conductivity and can better conduct the heat generated by the chip 20 to the first heat dissipation substrate 50.

[0042] In one embodiment, such as Figure 2 and Figure 3 As shown, the semiconductor module further includes a second thermally conductive substrate 70, which is located between the second heat dissipation substrate 60 and the chip 20. The molding compound 40 encapsulates the second thermally conductive substrate 70. The second thermally conductive substrate 70 can improve the efficiency of heat conduction from the chip 20 to the second heat dissipation substrate 60, thus facilitating heat dissipation.

[0043] In one embodiment, such as Figure 3 As shown, the second thermally conductive substrate 70 includes a second insulating layer 71, a third metal layer 72 located on the side of the second insulating layer 71 facing the second heat dissipation substrate 60, and a fourth metal layer 73 located on the side of the second insulating layer 71 away from the second heat dissipation substrate 60. In some embodiments, the material of the second insulating layer 71 may be silicon nitride, and the materials of the third metal layer 72 and the fourth metal layer 73 may be copper. Thus, the second thermally conductive substrate 70 has a better thermal conductivity and can better conduct the heat generated by the chip 20 to the second heat dissipation substrate 60.

[0044] In one embodiment, such as Figure 2 and Figure 3 As shown, the semiconductor module further includes a first graphite material layer 81 located between the first thermally conductive substrate 10 and the first heat-dissipating substrate 50. Because the first substrate body 51 of the first heat-dissipating substrate 50 and the first thermally conductive substrate 10 may warp during manufacturing, the contact area between the surface of the first substrate body 51 and the first thermally conductive substrate 10 is relatively small. By providing the first graphite material layer 81 between the first thermally conductive substrate 10 and the first heat-dissipating substrate 50, gaps between them can be avoided, which would affect the heat transfer efficiency between them. Furthermore, the first graphite material layer 81 has good thermal conductivity, effectively improving the heat transfer efficiency between the first thermally conductive substrate 10 and the first heat-dissipating substrate 50. Compared to filling the space between the first thermally conductive substrate 10 and the first heat-dissipating substrate 50 with solder, this avoids the problem of solder cracking caused by high temperatures in the semiconductor module, leading to semiconductor module failure and improving the reliability of the semiconductor module.

[0045] In one embodiment, the first graphite material layer 81 is made of graphite nanosheets. Graphite nanosheets have good formability and are easier to fabricate into film-like structures, which can better fill the gap between the first thermally conductive substrate 10 and the first heat-dissipating substrate 50. At the same time, graphite nanosheets have good toughness. By applying force to the first thermally conductive substrate 10 and the first heat-dissipating substrate 50, the nanographite nanosheets can better adhere to the first thermally conductive substrate 10 and the first heat-dissipating substrate 50, and the porosity inside the nanographite nanosheets can be reduced, further improving the thermal conductivity of the first graphite material layer 81.

[0046] In one embodiment, the thickness of the first graphite material layer 81 ranges from 50 μm to 100 μm. This configuration ensures that the first graphite material layer 81 fills the gap between the first thermally conductive substrate 10 and the first heat-dissipating substrate 50, while the presence of the first graphite material layer 81 does not significantly increase the thickness of the semiconductor module. In some embodiments, the thickness of the first graphite material layer 81 can be 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.

[0047] In one embodiment, such as Figure 3 As shown, the molding compound 4 encapsulates the first graphite material layer 81. This configuration allows the molding compound 4 to encapsulate the first thermally conductive substrate 10 and the first graphite material layer 81 together, preventing separation between the first graphite material layer 81 and the first thermally conductive substrate 10.

[0048] In one embodiment, the semiconductor module further includes a second graphite material layer 82 located between the second thermally conductive substrate 70 and the second heat-dissipating substrate 60. Because the second substrate body 61 of the second heat-dissipating substrate 60 and the second thermally conductive substrate 70 may warp during manufacturing, the contact area between the surface of the second substrate body 61 and the second thermally conductive substrate 70 is relatively small. By providing a second graphite material layer 82 between the second thermally conductive substrate 70 and the second heat-dissipating substrate 60, gaps between them can be avoided, which would affect the heat conduction efficiency between them. Furthermore, the second graphite material layer 82 has good thermal conductivity, effectively improving the heat conduction efficiency between the second thermally conductive substrate 70 and the second heat-dissipating substrate 60. Compared to filling the space between the second thermally conductive substrate 70 and the second heat-dissipating substrate 60 with solder, this avoids the problem of solder cracking caused by high temperatures in the semiconductor module, leading to semiconductor module failure and improving the reliability of the semiconductor module.

[0049] In one embodiment, the second graphite material layer 82 is made of graphite nanosheets. Graphite nanosheets have good formability and are easier to fabricate into film-like structures, which can better fill the gap between the second thermally conductive substrate 70 and the second heat-dissipating substrate 60. At the same time, graphite nanosheets have good toughness, and by applying force to the second thermally conductive substrate 70 and the second heat-dissipating substrate 60, the nanographite nanosheets can be better bonded to the second thermally conductive substrate 70 and the second heat-dissipating substrate 60, and the porosity inside the nanographite nanosheets can be reduced, further improving the thermal conductivity of the second graphite material layer 82.

[0050] In one embodiment, the thickness of the second graphite material layer 82 ranges from 50 μm to 100 μm. This configuration ensures that the second graphite material layer 82 fills the gap between the second thermally conductive substrate 70 and the second heat-dissipating substrate 6, while the presence of the second graphite material layer 82 does not significantly increase the thickness of the semiconductor module. In some embodiments, the thickness of the second graphite material layer 82 can be 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.

[0051] In one embodiment, such as Figure 3 As shown, the molding compound 40 encapsulates the second graphite material layer 82. This configuration allows the molding compound 40 to encapsulate the second thermally conductive substrate 70 and the second graphite material layer 82 together, preventing separation between the second graphite material layer 82 and the second thermally conductive substrate 70.

[0052] In one embodiment, such as Figure 2 As shown, the semiconductor module further includes a connector 88 that connects the first heat dissipation substrate 50, the second heat dissipation substrate 60, and the structure located between the first heat dissipation substrate 50 and the second heat dissipation substrate 60. This arrangement prevents adjacent components of the semiconductor module from separating, improving the reliability of the semiconductor module. Compared to welding the first heat dissipation substrate 50 to the first thermally conductive substrate 10 and welding the second heat dissipation substrate 60 to the second thermally conductive substrate 70, this method saves welding steps and optimizes the process flow.

[0053] In one embodiment, such as Figure 2 As shown, the connector 88 includes a screw 881 and a nut 882. The screw 881 passes through the first heat dissipation substrate 50, the second heat dissipation substrate 60, and a component located between the first heat dissipation substrate 50 and the second heat dissipation substrate 60. Nuts 882 connected to the screw 881 are respectively provided on the side of the second substrate body 61 of the second heat dissipation substrate 60 away from the first heat dissipation substrate 50 and on the side of the first substrate body 51 of the first heat dissipation substrate 50 away from the second heat dissipation substrate 60. The engagement of the screw 881 and the nut 882 compresses the first graphite material layer 81 and the second graphite material layer 82, thereby making the first graphite material layer 81 in close contact with the first heat dissipation substrate 50 and the first thermally conductive substrate 10, and making the second graphite material layer 82 in close contact with the second heat dissipation substrate 60 and the second thermally conductive substrate 70.

[0054] In one embodiment, such as Figure 2 and Figure 3As shown, the semiconductor module further includes a flexible support layer 90 located between the chip 20 and the second heat dissipation substrate 60. Specifically, the flexible support layer 90 is located between the chip 20 and the second heat-conducting substrate 70. By providing the flexible support layer 90, compared to the scheme where the chip 20 and the second heat-conducting substrate 70 are in direct contact, the thermal stress on the chip 20 can be reduced, which helps to avoid damage to the chip 20 due to excessive thermal stress and improves the reliability of the semiconductor module.

[0055] In one embodiment, the flexible support layer 90 may be made of an organic material. For example, the flexible support layer 90 may be made of at least one of PI (polyimide), PET (polyethylene terephthalate), etc. In some embodiments, the flexible support layer 90 is made of PI or PET.

[0056] In one embodiment, such as Figure 2 and Figure 3 As shown, the flexible support layer 90 includes a plurality of spaced flexible support blocks 91, each comprising a conductive material; the second thermally conductive substrate 70 includes a conductive layer comprising a plurality of spaced conductive connections; the flexible support blocks 91 are electrically connected to the conductive connections. The conductive layer may be a fourth metal layer 73, that is, the fourth metal layer 73 includes a plurality of conductive connections. The semiconductor module includes at least two chips 20, and the electrodes of at least two of the chips 20 are respectively electrically connected to the flexible support block 91, so as to be electrically connected through the flexible support block 91 and the conductive connections. Specifically, the electrodes of the two chips 20 are respectively connected to the same conductive connection through the flexible support block 91, thereby realizing the electrical connection of the electrodes of the two chips 20. With this configuration, the two chips 20 are electrically connected through the flexible support block 91 and the metal layer of the second thermally conductive substrate 70, eliminating the need for bonding wires. This avoids the problem of short circuits between adjacent bonding wires or between bonding wires and chip electrodes caused by the molding compound impacting the bonding wires during the molding process. The flexible support block 91 also serves to electrically connect the electrodes of the two chips and reduce the thermal stress on the chips. Compared to using two different structures to achieve electrical connection and reduce the thermal stress on the chips, this helps to simplify the structure of the semiconductor module.

[0057] In one embodiment, the conductive material of the flexible support block 91 is doped with an organic material. The conductive material may be metal powder, conductive carbon black, carbon nanotubes, etc.

[0058] In one embodiment, such as Figure 3 and Figure 4 As shown, the first metal layer 12 of the first thermally conductive substrate 10 includes a plurality of metal blocks 121, and each chip 20 is soldered to a metal block 121 through an adhesive layer 83. The adhesive layer 83 may be silver paste.

[0059] In one embodiment, such as Figure 3 As shown, the conductive terminal 30 is electrically connected to the electrode of the chip 20 via a bonding wire 89.

[0060] In another embodiment, such as Figure 4 As shown, the conductive terminal 30 is electrically connected to the electrodes of the chip 20 through the flexible support block 91 and the conductive connection portion.

[0061] In one embodiment, the conductive terminal 30 can be bonded to the metal block 121 with silver paste or solder and is electrically connected to the metal block 121. When the conductive terminal 30 is electrically connected to the electrode of the chip 20 via a bonding wire 89, one end of the bonding wire 89 is soldered to the electrode of the chip 20, and the other end is soldered to the metal block 121 that is electrically connected to the conductive terminal 30.

[0062] In one embodiment, the semiconductor module may include a plurality of conductive terminals 30, which may be distributed on at least two sides of the molding compound 40. In some embodiments, some conductive terminals 30 are exposed from one side of the molding compound 40, while other conductive terminals 30 are exposed from the other opposite side of the molding compound 40. In some embodiments, the widths of the plurality of conductive terminals 30 may not all be the same.

[0063] In one embodiment, the materials of the first heat dissipation substrate 50 and the second heat dissipation substrate 60 may be copper, AlSiC, molybdenum-copper alloy, etc. This helps to improve the heat conduction efficiency of the first heat dissipation substrate 50 and the second heat dissipation substrate 60.

[0064] In one embodiment, the semiconductor module may be an IGBT module. IGBT modules generate significant heat, and the semiconductor module provided in this embodiment offers good heat dissipation, effectively improving the performance of the IGBT module.

[0065] This application also provides a semiconductor device. For example... Figure 5 and Figure 6 As shown, the semiconductor device includes the semiconductor module, the first heat sink 84 and the second heat sink 86 described in any of the above embodiments.

[0066] The first heat sink 84 has a first cavity 841 through which refrigerant flows, a first inlet 842 communicating with the first cavity 841, and a first outlet 843 communicating with the first cavity 841. The first heat sink 84 is located on the side of the first substrate body 51 away from the chip 20 and is connected to the first substrate body 51. The first heat dissipation part 52 extends into the first cavity 841. The second heat sink 86 has a second cavity 861 through which refrigerant flows, a second inlet 862 communicating with the second cavity 861, and a second outlet 863 communicating with the second cavity 861. The second heat sink 86 is located on the side of the second substrate body 61 away from the chip 20 and is connected to the second substrate body 61. The second heat dissipation part 62 extends into the second cavity 861.

[0067] In the semiconductor device provided in this application embodiment, the first heat dissipation part 52 of the first heat dissipation substrate 50 extends into the first cavity 841 of the first heat sink 84 and is in direct contact with the liquid refrigerant. The second heat dissipation part 61 can extend into the second cavity 861 of the second heat sink 86 and be in direct contact with the liquid refrigerant. The liquid refrigerant can quickly carry away the heat, thereby effectively improving the heat dissipation effect of the semiconductor module.

[0068] In one embodiment, the peripheral dimensions of the first heat dissipation portion 52 gradually decrease in the direction away from the first substrate body 51. This allows for better heat conduction in the portion of the first heat dissipation portion 52 closer to the first substrate body 51, while also reducing the resistance of the liquid refrigerant in the first heat dissipation portion 52, further improving the heat dissipation capability of the semiconductor module.

[0069] In one embodiment, the peripheral dimensions of the second heat dissipation portion 62 gradually decrease in the direction away from the second substrate body 61. This allows for better heat conduction in the portion of the second heat dissipation portion 62 closer to the second substrate body 61, while also reducing the resistance of the second heat dissipation portion 62 to the liquid refrigerant, further improving the heat dissipation capability of the semiconductor module.

[0070] In one embodiment, such as Figure 5 and Figure 6 As shown, the semiconductor device further includes connectors 85 and 87. The first heat sink 84 is connected to the first substrate body 51 of the first heat sink substrate 50 via connector 85, and the second heat sink 86 is connected to the second substrate body 61 of the second heat sink substrate 60 via connector 87.

[0071] In one embodiment, such as Figure 5As shown, the first heat sink 84 includes a first plate portion 844 facing the first substrate body 51; the first plate portion 844 is provided with a plurality of first through holes 845, and each first heat dissipation part 52 extends into the first cavity 841 through one of the first through holes 845. The first through holes 845 and the first heat dissipation parts 52 can correspond one-to-one, and each first heat dissipation part 52 extends into the first cavity 841 through the corresponding first through hole 845. In this way, the side surface of the first heat dissipation part 52 contacts the hole wall of the first through hole 845, which can increase the contact area between the first heat dissipation substrate 50 and the first heat sink 84.

[0072] In another embodiment, such as Figure 6 As shown, the first heat sink 84 includes a first plate portion 844 facing the first substrate body 51; the first plate portion 844 is provided with a first opening 846 communicating with the first cavity 841, and the plurality of first heat dissipation parts 52 extend into the first cavity 841 through the same first opening 846. With this configuration, the liquid refrigerant can contact the surface of the first substrate body 51 exposed by the first opening 846, thus increasing the contact area between the first heat dissipation substrate 50 and the liquid refrigerant, which is more conducive to improving the heat dissipation capacity of the semiconductor module.

[0073] In one embodiment, such as Figure 5 As shown, the second heat sink 86 includes a second plate portion 864 facing the second substrate body 61; the second plate portion 864 is provided with a plurality of second through holes 865, and each second heat dissipation part 62 extends into the second cavity 861 through one of the second through holes 865. The second through holes 865 and the second heat dissipation parts 62 can correspond one-to-one, and each second heat dissipation part 62 extends into the first cavity 841 through the corresponding second through hole 865. In this way, the side surface of the second heat dissipation part 62 contacts the hole wall of the second through hole 865, which can increase the contact area between the second heat dissipation substrate 60 and the second heat sink 86.

[0074] In another embodiment, such as Figure 6 As shown, the second heat sink 86 includes a second plate portion 864 facing the second substrate body 61; the second plate portion 864 is provided with a second opening 866 communicating with the second cavity 861, and the plurality of second heat dissipation parts 62 extend into the second cavity 861 through the same second opening 866. This configuration allows the liquid refrigerant to contact the surface of the second substrate body 61 exposed by the second opening 866, thus increasing the contact area between the second heat dissipation substrate 60 and the liquid refrigerant, which is more conducive to improving the heat dissipation capacity of the semiconductor module.

[0075] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0076] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0077] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A semiconductor module, characterized in that, The semiconductor module includes: First thermally conductive substrate; A chip is mounted on one side of the first thermally conductive substrate; the chip includes electrodes. The conductive terminal is located on the same side of the first thermally conductive substrate as the chip and is electrically connected to the electrode; A molding compound covers the chip, the first thermally conductive substrate, and the conductive terminal, with the ends of the conductive terminals exposed from the side of the molding compound. The first heat dissipation substrate is located on the side of the first thermal conductive substrate away from the chip, and includes a first substrate body and a plurality of first heat dissipation parts. The plurality of first heat dissipation parts are located on the side of the first substrate body away from the chip and are connected to the first substrate body. The second heat dissipation substrate is located on the side of the chip away from the first heat-conducting substrate, and includes a second substrate body and a plurality of heat dissipation parts. The plurality of second heat dissipation parts are located on the side of the second substrate body away from the chip and are connected to the second substrate body.

2. The semiconductor module according to claim 1, characterized in that, The semiconductor module further includes a first graphite material layer located between the first thermally conductive substrate and the first heat-dissipating substrate.

3. The semiconductor module according to claim 2, characterized in that, The graphite material layer is made of graphite nanosheets; and / or, The molding layer encapsulates the first graphite material layer.

4. The semiconductor module according to claim 2, characterized in that, The semiconductor module further includes a connector that connects the first heat dissipation substrate, the second heat dissipation substrate, and a structure located between the first heat dissipation substrate and the second heat dissipation substrate.

5. The semiconductor module according to claim 1, characterized in that, The semiconductor module also includes a flexible support layer located between the chip and the second heat dissipation substrate.

6. The semiconductor module according to claim 1, characterized in that, The semiconductor module further includes a second thermally conductive substrate and a second graphite material layer; the second thermally conductive substrate is located between the second heat dissipation substrate and the chip, and the molding compound encapsulates the second thermally conductive substrate; The second graphite material layer is located between the second thermally conductive substrate and the second heat dissipation substrate; And / or, The semiconductor module is an IGBT module.

7. The semiconductor module according to claim 1, characterized in that, The semiconductor module further includes a second thermally conductive substrate and a flexible support layer. The second thermally conductive substrate is located between the chip and the second heat dissipation substrate, and the flexible support layer is located between the second thermally conductive substrate and the chip. The flexible support layer includes a plurality of spaced flexible support blocks, and the flexible support blocks include conductive materials. The second thermally conductive substrate includes an insulating layer and a conductive layer located on the side of the insulating layer facing the chip. The conductive layer includes a plurality of conductive connections. The flexible support block is electrically connected to the conductive connections. The semiconductor module includes at least two chips, and the electrodes of the at least two chips are electrically connected to the flexible support block, so as to be electrically connected through the flexible support block and the conductive connection portion.

8. The semiconductor module according to claim 7, characterized in that, The conductive terminal is electrically connected to the electrode of the chip through the flexible support block and the conductive connection portion; or, the conductive terminal is electrically connected to the electrode of the chip through a bonding wire.

9. A semiconductor device, characterized in that, The semiconductor device includes: The semiconductor module according to any one of claims 1 to 8; The first heat sink has a first cavity through which refrigerant flows, a first inlet communicating with the first cavity, and a first outlet communicating with the first cavity; the first heat sink is located on the side of the first substrate body away from the chip and is connected to the first substrate body, and the first heat dissipation part extends into the first cavity. The second heat sink has a second cavity through which the refrigerant flows, a second inlet communicating with the second cavity, and a second outlet communicating with the second cavity; the second heat sink is located on the side of the second substrate body away from the chip and is connected to the second substrate body, and the second heat dissipation part extends into the second cavity.

10. The semiconductor device according to claim 9, characterized in that, The first heat sink includes a first plate portion facing the first substrate body; the first plate portion is provided with a first opening communicating with the first cavity, and the plurality of first heat dissipation portions extend into the first cavity through the same first opening; or, the first plate portion is provided with a plurality of first through holes, and each first heat dissipation portion extends into the first cavity through one of the first through holes. The second heat sink includes a second plate portion facing the second substrate body; the second plate portion is provided with a second opening communicating with the second cavity, and the plurality of second heat dissipation portions extend into the second cavity through the same second opening; or, the second plate portion is provided with a plurality of second through holes, and each second heat dissipation portion extends into the second cavity through one of the second through holes.

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