Deposition mask and method for manufacturing a deposition mask

Abstract

Disclosed are a deposition mask and a method for manufacturing a deposition mask. A deposition mask according to an embodiment of the present invention includes a base layer, an upper layer, and a plurality of perpendicular magnetic bodies. A plurality of base opening portions and a plurality of filling grooves are defined in the base layer. Each of the plurality of filling grooves is arranged between the plurality of base opening portions. A plurality of permeable regions and a plurality of non-permeable regions are defined in the upper layer. The plurality of permeable regions respectively overlap the plurality of base opening portions and permeate a deposition material. The non-permeable regions surround the plurality of permeable regions. The plurality of perpendicular magnetic bodies are arranged in the plurality of filling grooves. At least a portion of the plurality of perpendicular magnetic bodies has a shape in which a cross-sectional area decreases as it moves away from the upper layer.

Description

Technical Field

[0001] This invention relates to a deposition apparatus, a deposition mask, and a method for manufacturing a deposition mask. More specifically, it relates to a deposition apparatus, a deposition mask, and a method for manufacturing a deposition mask by arranging a plurality of vertical magnetic bodies to mitigate sagging during a deposition process. Background Technology

[0002] A deposition apparatus can be an apparatus for depositing a deposition layer on a substrate using a deposition mask. During the deposition process, if the deposition mask is flat, a deposition layer can be formed normally on the substrate. Conversely, if the deposition mask is not flat, a deposition layer may be formed abnormally on the substrate.

[0003] Therefore, a magnetic field generating device can be used to increase the flatness of the deposition mask, thereby enabling the deposition layer to be formed normally on the substrate. However, if the deposition mask does not include a magnetic material, the magnetic field generating device may not be able to increase the flatness of the deposition mask. Summary of the Invention

[0004] Technical issues

[0005] The object of the present invention is to provide a deposition apparatus having a deposition mask arranged with a plurality of vertical magnetic bodies to increase flatness by means of a magnetic field.

[0006] Another object of the present invention is to provide a deposition mask comprising a plurality of vertical magnetic bodies to increase flatness by means of a magnetic field, and a method thereof for manufacturing the same.

[0007] Solution

[0008] A deposition mask according to an embodiment of the present invention may include a substrate layer, an upper layer, and a plurality of vertical magnets. The substrate layer may define a plurality of substrate openings and a plurality of filling grooves. Each of the plurality of filling grooves may be disposed between the plurality of substrate openings. The upper layer may define a plurality of permeable regions and non-permeable regions. The plurality of permeable regions allow the deposition material to pass through. The non-permeable regions may surround the plurality of permeable regions. The plurality of permeable regions may each overlap with the plurality of substrate openings. The plurality of permeable regions may each include a plurality of patterned openings. The non-permeable regions may include a plurality of upper filling openings that overlap with the plurality of filling grooves. Each of the plurality of vertical magnets may be disposed in a corresponding upper filling opening and a corresponding filling groove of the plurality of filling grooves. At least a portion of each of the plurality of vertical magnets may have a shape in which the cross-sectional area decreases with distance from the upper layer.

[0009] In one embodiment of the invention, the plurality of base openings may have a shape in which the width increases as the distance from the upper layer increases.

[0010] In one embodiment of the invention, each of the plurality of vertical magnetic bodies may include a plurality of inclined surfaces in contact with the substrate layer. The intersection line between the plurality of inclined surfaces and the upper surface of the substrate layer may form a rectangle.

[0011] In one embodiment of the present invention, each of the plurality of vertical magnetic bodies may include a plurality of inclined surfaces in contact with the substrate layer. The angle formed by each of the plurality of inclined surfaces and a surface parallel to the upper surface of the substrate layer may be greater than 54 degrees and less than 55 degrees.

[0012] In one embodiment of the present invention, the substrate layer may include a plurality of mask tilted surfaces defining the plurality of substrate openings. Each of the plurality of mask tilted surfaces forms an angle between itself and a surface parallel to the upper surface of the substrate layer, which may be greater than 54 degrees and less than 55 degrees.

[0013] In one embodiment of the invention, the deposition mask may further include an intermediate layer. The intermediate layer may define a plurality of intermediate mask openings and a plurality of intermediate fill openings. The plurality of intermediate mask openings may overlap with the plurality of substrate openings, respectively. The plurality of intermediate fill openings may overlap with the plurality of fill grooves, respectively. The intermediate layer may be disposed between the substrate layer and the upper layer.

[0014] In one embodiment of the present invention, the deposition mask may further include a first lower layer and a second lower layer. The first lower layer may be disposed below the substrate layer and defines a plurality of first lower openings, the plurality of first lower openings overlapping the plurality of substrate openings respectively. The second lower layer may be disposed below the first lower layer and defines a plurality of second lower openings, the plurality of second lower openings overlapping the plurality of first lower openings respectively.

[0015] In one embodiment of the present invention, the substrate layer may include monocrystalline silicon. The upper surface of the substrate layer may be a crystal plane in the monocrystalline silicon with a Miller index of (100). The intermediate layer may include silicon oxide. The upper layer may include silicon nitride. The first lower layer may include silicon oxide. The second lower layer may include silicon nitride.

[0016] In one embodiment of the invention, the substrate layer may include a plurality of sloping filling surfaces defining the plurality of filling trenches. Each of the plurality of sloping filling surfaces may be a crystal plane in the single-crystal silicon with a Miller index of (111).

[0017] In one embodiment of the present invention, the deposition mask may further include a magnetic layer disposed on the plurality of vertical magnetic bodies.

[0018] In one embodiment of the invention, each of the plurality of vertical magnets may include a portion that does not overlap with the plurality of upper filling openings.

[0019] In one embodiment of the present invention, a first region and a second region may be defined. A first vertical magnetic body from the plurality of vertical magnetic bodies may be arranged in the first region. A second vertical magnetic body from the plurality of vertical magnetic bodies may be arranged in the second region. The volume of the first vertical magnetic body per unit volume may be larger than the volume of the second vertical magnetic body per unit volume.

[0020] In one embodiment of the present invention, the second region may surround the first region.

[0021] In one embodiment of the present invention, a first region and a second region may be defined. A first vertical magnetic body from the plurality of vertical magnetic bodies may be arranged in the first region. A second vertical magnetic body from the plurality of vertical magnetic bodies may be arranged in the second region. The number of first vertical magnetic bodies per unit area may be greater than the number of second vertical magnetic bodies per unit area.

[0022] In one embodiment of the present invention, a first region and a second region may be defined. A first vertical magnetic body from the plurality of vertical magnetic bodies may be arranged in the first region. A second vertical magnetic body from the plurality of vertical magnetic bodies may be arranged in the second region. The volume of each of the first vertical magnetic bodies may be larger than the volume of each of the second vertical magnetic bodies.

[0023] A method for manufacturing a deposition mask according to an embodiment of the present invention may include a preparation step, a filling opening formation step, a filling groove formation step, a magnetic body arrangement step, a patterned opening formation step, a protective layer formation step, and a mask opening formation step. In the preparation step, a base material may be prepared, the base material including a substrate layer, an intermediate layer disposed on the substrate layer, an upper layer disposed on the intermediate layer, a first lower layer disposed below the substrate layer, and a second lower layer disposed below the first lower layer. In the filling opening formation step, a plurality of upper filling openings may be formed in the upper layer, a plurality of intermediate filling openings overlapping the plurality of upper filling openings may be formed in the intermediate layer, and the upper surface of the substrate layer may be exposed. In the filling groove formation step, the exposed upper surface of the substrate layer may be etched to form a plurality of filling grooves overlapping the plurality of intermediate filling openings. Each of the plurality of filling grooves may have a shape whose cross-sectional area decreases as it moves downwards. In the magnetic body arrangement step, a plurality of vertical magnetic bodies may be arranged in the plurality of filling grooves. In the pattern opening formation step, a plurality of pattern openings, positioned and spaced apart from the plurality of upper filling openings, can be formed in the upper layer. In the protective layer formation step, a protective layer can be formed on the plurality of vertical magnets and the upper layer. In the mask opening formation step, a plurality of mask openings overlapping the plurality of pattern openings can be formed in the first lower layer, the second lower layer, the base layer, and the intermediate layer, and the protective layer is removed.

[0024] In one embodiment of the present invention, the preparation steps may include a substrate preparation step, an oxide film formation step, and a nitride film formation step. In the substrate preparation step, a substrate layer comprising monocrystalline silicon may be prepared, wherein the upper and lower surfaces of the substrate layer are crystal planes of the monocrystalline silicon with a Miller index of (100). In the oxide film formation step, the upper and lower surfaces of the substrate layer may be oxidized to form an intermediate layer comprising silicon oxide on the upper surface of the substrate layer and a first lower layer comprising silicon oxide on the lower surface of the substrate layer. In the nitride film formation step, low-pressure chemical vapor deposition may be performed on the upper surface of the intermediate layer to form an upper layer comprising silicon nitride, and low-pressure chemical vapor deposition may be performed on the upper surface of the first lower layer to form a second lower layer comprising silicon nitride. In the filler formation step, the upper portion of the substrate layer may be wet-etched to expose the crystal planes of the monocrystalline silicon with a Miller index of (111).

[0025] In one embodiment of the present invention, the method for manufacturing the deposition mask may further include a magnetic body layer forming step, wherein a magnetic body layer is arranged on the plurality of vertical magnetic bodies.

[0026] A deposition apparatus according to an embodiment of the present invention may include a mask arrangement section and a deposition source. A mask may be arranged in the mask arrangement section. The deposition source may emit a deposition material. The deposition mask may include a plurality of vertical magnetic bodies. The deposition mask may define a plurality of permeable regions through which the deposition material passes and non-permeable regions that block the deposition material and surround the plurality of permeable regions. Each of the plurality of permeable regions may include a plurality of patterned openings. The non-permeable regions may define a plurality of filling spaces in which the plurality of vertical magnetic bodies are arranged. Each of the plurality of vertical magnetic bodies may include a portion whose cross-sectional area decreases as it approaches the deposition source.

[0027] In one embodiment of the invention, the deposition apparatus may further include a magnet plate disposed on the mask arrangement portion and forming a magnetic field to attract magnetic materials. When the deposition mask is disposed on the mask arrangement portion and exposed to the magnetic field generated in the magnet plate, the deposition mask may have a first flatness. When the deposition mask is disposed on the mask arrangement portion and not exposed to the magnetic field generated in the magnet plate, the deposition mask may have a second flatness that is smaller than the first flatness.

[0028] Beneficial effects

[0029] In one embodiment of the present invention, a deposition apparatus may be provided having a deposition mask arranged with a plurality of vertical magnetic bodies to increase flatness by means of a magnetic field.

[0030] In one embodiment of the present invention, a deposition mask comprising a plurality of vertical magnetic bodies to increase flatness by means of a magnetic field and a method thereof may be provided.

[0031] In one embodiment of the invention, a plurality of vertical magnetic bodies have a shape in which the cross-sectional area decreases as they move away from the upper layer, thereby being more strongly attracted by a magnetic field.

[0032] In one embodiment of the invention, a plurality of mask tilted surfaces defining a plurality of substrate openings are parallel to any one of a plurality of filling tilted surfaces defining a plurality of filling grooves, so that the deposition mask can be structurally stable.

[0033] In one embodiment of the invention, at least a portion of the filling space for the plurality of vertical magnetic bodies is manufactured by a wet etching process, thereby enabling rapid and uniform formation at low cost. Attached Figure Description

[0034] Figure 1a and Figure 1b A cross-sectional view of a deposition apparatus according to an embodiment of the present invention is shown as an example.

[0035] Figure 2 An exemplary view of the upper surface of a deposition mask according to an embodiment of the present invention is shown.

[0036] Figure 3 A cross-sectional view of a deposition mask according to an embodiment of the present invention is shown as an example.

[0037] Figure 4a An exemplary perspective view of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention is shown.

[0038] Figure 4b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention are shown.

[0039] Figure 5 A flowchart of a method for manufacturing a deposition mask according to an embodiment of the present invention is shown as an example.

[0040] Figures 6a to 6g These are cross-sectional views schematically illustrating the steps of a method for manufacturing a deposition mask according to an embodiment of the present invention.

[0041] Figure 7 An exemplary view of the upper surface of a substrate according to an embodiment of the present invention is shown.

[0042] Figure 8 A cross-sectional view of a display panel manufactured by a deposition apparatus according to an embodiment of the present invention is shown as an example.

[0043] Figure 9 , Figure 10 and Figure 11a An exemplary view of the upper surface of a deposition mask according to an embodiment of the present invention is shown.

[0044] Figure 11b An exemplary perspective view of any one of a plurality of first vertical magnetic bodies according to an embodiment of the present invention is shown.

[0045] Figure 11c Exemplary top and bottom views of any one of a plurality of first vertical magnetic bodies according to an embodiment of the present invention are shown.

[0046] Figure 12 A cross-sectional view of a deposition mask according to an embodiment of the present invention is shown as an example.

[0047] Figure 13a An exemplary perspective view of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention is shown.

[0048] Figure 13bExemplary top and bottom views of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention are shown.

[0049] Figure 14a An exemplary perspective view of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention is shown.

[0050] Figure 14b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention are shown.

[0051] Figure 15a An exemplary perspective view of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention is shown.

[0052] Figure 15b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention are shown.

[0053] Figure 16a An exemplary perspective view of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention is shown.

[0054] Figure 16b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention are shown.

[0055] Figure 17 An exemplary perspective view of any one of a plurality of vertical magnetic bodies according to an embodiment of the present invention is shown.

[0056] Explanation of reference numerals in the attached figures

[0057] DPA: Deposition apparatus; CMB: Chamber

[0058] MST: Mask Stage; MDP: Mask Layout Unit

[0059] SCK: Substrate Chuck; SMP: Substrate Moving Part

[0060] MPT: Magnet Plate; MMP: Moving Magnet Part

[0061] SRC: Deposition Source; DPM: Deposition Mask

[0062] SUB: Substrate NPA: Non-transparent area

[0063] PA: Through Region MGD: Mask Mesh

[0064] MF: Mask Frame; UL: Upper Layer

[0065] ML: Intermediate layer; BL: Basal layer

[0066] LL1: First lower layer; LL2: Second lower layer

[0067] VMB: Vertical Magnetic Body; UMB: Upper Magnetic Body

[0068] LMB: Lower magnetic body; POP: Pattern opening.

[0069] MOP: Mask Opening; MMOP: Intermediate Mask Opening

[0070] BOP: Base opening; LOP1: First lower opening

[0071] LOP2: Second lower opening; FS: Fill space.

[0072] UFOP: Top Fill Opening; MFOP: Middle Fill Opening

[0073] FG: Filling groove Detailed Implementation

[0074] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0075] In the accompanying drawings, the proportions and dimensions of the constituent elements are exaggerated for the purpose of effective description of the technical content. "And / or" includes more than one combination of the relevant constituent elements.

[0076] The phrase "an element or layer is on top of another element or layer" includes cases where another layer or element is placed directly on top of another element or inserted in between. Conversely, the phrase "an element is directly on top of..." indicates that no other element or layer is inserted in between. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0077] Terms such as “including” should be understood as specifying the presence of features, figures, steps, operations, constituent elements, components, or combinations thereof as described in the specification, rather than precluding the presence or addition of one or more features or figures, steps, operations, constituent elements, components, or combinations thereof.

[0078] Figure 1a and Figure 1b A cross-sectional view of a deposition apparatus DPA according to an embodiment of the present invention is shown as an example.

[0079] refer to Figure 1a and Figure 1b The deposition apparatus DPA may include a chamber CMB, a mask stage MST, a mask arrangement section MDP, a substrate chuck SCK, a substrate moving section SMP, a magnet plate MPT, a magnet moving section MMP, and a deposition source SRC. Furthermore, the deposition mask DPM may be arranged in the mask arrangement section MDP, and the substrate SUB may be arranged in the substrate chuck SCK.

[0080] The directions indicated by the first direction axis DR1, the second direction axis DR2, and the third direction axis DR3 can be relative concepts and can be transformed into other directions. Hereinafter, the first direction DR1, the second direction DR2, and the third direction DR3 refer to the directions indicated by the first direction axis DR1, the second direction axis DR2, and the third direction axis DR3, respectively, with reference to the same reference numerals in the accompanying drawings.

[0081] The internal space of the cavity deposition chamber (CMB) can be defined. The CMB can house the mask stage (MST), mask placement unit (MDP), substrate chuck (SCK), substrate moving unit (SMP), magnet plate (MPT), magnet moving unit (MMP), and deposition source (SRC). The internal pressure of the CMB can be adjusted. For example, the internal pressure of the CMB can be reduced, creating a vacuum inside the CMB, to perform the deposition process more uniformly within the CMB.

[0082] The mask stage MST can support the mask arrangement unit MDP.

[0083] A deposition mask (DPM) can be arranged on a mask arrangement section (MDP). The mask arrangement section (MDP) can support only a portion of the deposition mask (DPM). For example, the mask arrangement section (MDP) can support only the outer periphery of the deposition mask (DPM). Furthermore, the deposition mask (DPM) arranged on the mask arrangement section (MDP) can be as follows: Figure 1a The central part of the ground droops as shown, and it can also be like... Figure 1b The ground shown is flat.

[0084] A deposition mask (DPM) may include multiple magnetic bodies. Furthermore, multiple patterned openings may be defined within the deposition mask (DPM). A more detailed structure of the deposition mask (DPM) will be described later with reference to additional figures.

[0085] A substrate SUB can be arranged in the substrate chuck SCK. During the deposition process, a deposition layer can be formed on the substrate SUB along the shape of multiple patterned openings defined in the deposition mask DPM. Furthermore, a more detailed structure of the substrate SUB will be described later with reference to additional figures.

[0086] The substrate moving unit SMP can move the substrate chuck SCK and the substrate SUB. For example, the substrate moving unit SMP can move the substrate SUB on the third-party DR3 so that the substrate SUB and the deposition mask DPM are adjacent to each other.

[0087] The magnetic plate MPT can generate a magnetic field to increase the flatness of the deposition mask DPM. The magnetic plate MPT can attract magnetic materials included in the deposition mask DPM. Therefore, as... Figure 1b As shown, the flatness of the deposition mask DPM can be increased using a magnetic field. Furthermore, in Figure 1b The flatness of the deposition mask DPM can be defined as the first flatness. The magnet plate MPT can include permanent magnets or electromagnets.

[0088] On the other hand, when the magnetic plate MPT does not form a magnetic field, the flatness of the deposition mask DPM may be reduced. For example, as Figure 1a As shown, the central portion of the deposition mask DPM can droop. Furthermore, in Figure 1a The flatness of the deposition mask DPM can be defined as the second flatness. Furthermore, the first flatness can be greater than the second flatness.

[0089] The magnet moving part MMP can move the magnet plate MPT on the third-party DR3. The position of the magnet plate MPT can be changed by the magnet moving part MMP.

[0090] The deposition source SRC can emit deposited material. The deposited material emitted from the deposition source SRC can reach the substrate SUB through multiple mask openings and multiple pattern openings of the deposition mask DPM. Therefore, a deposited layer can be formed on the substrate SUB.

[0091] Figure 2 An exemplary view of the upper surface of a deposition mask DPM according to an embodiment of the present invention is shown. Figure 3 A cross-sectional view of a deposition mask DPM according to an embodiment of the present invention is shown exemplarily.

[0092] refer to Figure 2 and Figure 3 The deposition mask DPM may include an upper UL layer, an intermediate ML layer, a substrate BL layer, a first lower LL1 layer, a second lower LL2 layer, and multiple vertical magnetic bodies VMB. Furthermore, a mask frame MF, a mask grid MGD, and a pattern grid PGD may be formed in the deposition mask DPM. Multiple patterned openings POP, multiple mask openings MOP, and multiple filling spaces FS may be defined in the deposition mask DPM. Each of the multiple mask openings MOP may include an intermediate mask opening MMOP, a substrate opening BOP, a first lower opening LOP1, and a second lower opening LOP2. Each of the multiple filling spaces FS may include an upper filling opening UFOP, an intermediate filling opening MFOP, and a filling groove FG.

[0093] The upper UL may include an upper surface, a lower surface, and a plurality of side surfaces, the lower surface being opposite to the upper surface, and each of the plurality of side surfaces extending from at least one of the upper surface and the lower surface.

[0094] Multiple patterned openings (POPs) and multiple upper fill openings (UFOPs) can be defined in the upper UL. Specifically, the multiple patterned openings (POPs) can be defined by a portion of the side surface of the upper UL, and the multiple upper fill openings (UFOPs) can be defined by another portion of the side surface of the upper UL.

[0095] In one embodiment of the invention, the upper UL layer may include silicon nitride. A portion of a mask grid (MGD) and at least a portion of a patterned grid (PGD) may be formed in the upper UL layer. The thickness of the upper UL layer may be from 0.1 micrometers to 1 micrometer.

[0096] In the upper UL layer, multiple permeable regions PA that allow the deposited material to pass through and non-permeable regions NPA that block the deposited material can be defined.

[0097] Multiple permeable regions (PAs) can each include multiple patterned openings (POPs). Deposited material can pass through the multiple permeable regions (PAs) through the multiple patterned openings (POPs). Each of the multiple permeable regions (PAs) can overlap with multiple mask openings (MOPs).

[0098] The non-permeable region NPA can surround multiple permeable regions PA. The non-permeable region NPA can include multiple overfilled openings UFOP.

[0099] The intermediate layer ML may include an upper surface, a lower surface, and a plurality of side surfaces, the lower surface being opposite to the upper surface, and each of the plurality of side surfaces extending from at least one of the upper surface and the lower surface.

[0100] Multiple intermediate mask openings (MMOPs) and multiple intermediate fill openings (MFOPs) can be defined in the intermediate layer ML. Specifically, the multiple intermediate mask openings (MMOPs) can be defined by a portion of the side surface of the intermediate layer ML, and the multiple intermediate fill openings (MFOPs) can be defined by another portion of the side surface of the intermediate layer ML.

[0101] Multiple intermediate mask openings (MMOPs) can overlap with multiple pattern openings (POPs). Furthermore, multiple intermediate fill openings (MFOPs) can overlap with multiple top fill openings (UFOPs).

[0102] In one embodiment of the invention, the intermediate layer ML may comprise silicon oxide. At least a portion of the mask grid MGD may be formed in the intermediate layer ML. The thickness of the intermediate layer ML may be from 0.1 micrometers to 1 micrometer.

[0103] The substrate layer BL may include a top surface, a bottom surface, and a plurality of side surfaces, the bottom surface being opposite the top surface, and each of the plurality of side surfaces extending from at least one of the top surface and the bottom surface. The plurality of side surfaces of the substrate layer BL may include a plurality of mask tilt surfaces MIP and a plurality of fill tilt surfaces FIP.

[0104] The angle formed by each of the multiple mask tilt surfaces (MIPs) with the upper surface of the substrate layer BL or a surface parallel to the upper surface of the substrate layer BL can be defined as the mask tilt angle (MIA). The mask tilt angle (MIA) can be greater than 54 degrees and less than 55 degrees. The angle formed by each of the multiple fill tilt surfaces (FIPs) with the upper surface of the substrate layer BL or a surface parallel to the upper surface of the substrate layer BL can be defined as the fill tilt angle (FIA). The fill tilt angle (FIA) can be greater than 54 degrees and less than 55 degrees.

[0105] Multiple substrate openings (BOPs) and multiple filler grooves (FGs) can be defined within the substrate layer (BL). Specifically, the multiple substrate openings (BOPs) can be defined by multiple mask tilting surfaces (MIPs). The multiple substrate openings (BOPs) can overlap with multiple intermediate mask openings (MMOPs). The width of the multiple substrate openings (BOPs) can increase with distance from the upper UL layer.

[0106] Multiple filler slots (FG) can be defined by multiple filler inclined surfaces (FIP). Multiple filler slots (FG) can overlap with multiple intermediate filler openings (MFOP). Multiple filler slots (FG) can be arranged between multiple base openings (BOP). Multiple filler slots (FG) can narrow in width as they move away from the upper UL layer.

[0107] In one embodiment of the present invention, the substrate layer BL may comprise monocrystalline silicon. Essentially, the substrate layer BL may be a silicon wafer composed of monocrystalline silicon. At least a portion of the mask grid MGD may be formed in the substrate layer BL. The thickness of the substrate layer BL may be from 760 micrometers to 790 micrometers.

[0108] On the other hand, the substrate layer BL is not limited to monocrystalline silicon. The substrate layer BL can include polymer materials, polycrystalline silicon, amorphous silicon, etc.

[0109] The upper and lower surfaces of the substrate layer BL can be the (100) crystal plane of monocrystalline silicon. In the (100) crystal plane, (100) can mean the Miller index in the Bravais lattice.

[0110] The multiple mask tilted surfaces (MIPs) and multiple fill tilted surfaces (FIPs) of the substrate layer BL can be the (111) crystal plane of single-crystal silicon. In the (111) crystal plane, (111) can mean the Miller index in the Bravais lattice. Therefore, each of the multiple mask tilted surfaces (MIPs) can be parallel to any one of the multiple fill tilted surfaces (FIPs).

[0111] Therefore, structural weak points that might occur when the distance between multiple fill tilted surfaces (FIPs) and multiple mask tilted surfaces (MIPs) narrows can be prevented. Thus, the deposition mask (DPM) can be structurally stable.

[0112] The first lower layer LL1 may include an upper surface, a lower surface, and a plurality of side surfaces, the lower surface being opposite to the upper surface, and each of the plurality of side surfaces extending from at least one of the upper surface and the lower surface.

[0113] Multiple first lower openings (LOP1) can be defined in the first lower layer LL1. Specifically, the multiple first lower openings (LOP1) can be defined by the side surfaces of the first lower layer LL1. The multiple first lower openings (LOP1) can overlap with multiple base openings (BOP).

[0114] In one embodiment of the invention, the first lower layer LL1 may comprise silicon oxide. At least a portion of a mask grid (MGD) may be formed in the first lower layer LL1. The thickness of the first lower layer LL1 may be from 0.1 micrometers to 1 micrometer.

[0115] The second lower layer LL2 may include an upper surface, a lower surface, and a plurality of side surfaces, the lower surface being opposite to the upper surface, and each of the plurality of side surfaces extending from at least one of the upper surface and the lower surface.

[0116] A plurality of second lower openings LOP2 may be defined in the second lower layer LL2. Specifically, the plurality of second lower openings LOP2 may be defined by the side surfaces of the second lower layer LL2. The plurality of second lower openings LOP2 may overlap with a plurality of first lower openings LOP1.

[0117] In one embodiment of the invention, the second lower layer LL2 may include silicon nitride. At least a portion of the mask mesh MGD may be formed in the second lower layer LL2. The thickness of the second lower layer LL2 may be from 0.1 micrometers to 1 micrometer.

[0118] Each of the plurality of perpendicular magnetic bodies (VMBs) may include a metallic material. For example, the plurality of perpendicular magnetic bodies (VMBs) may include at least one of iron, nickel, and cobalt.

[0119] Multiple vertical magnetic bodies (VMBs) can be arranged in multiple filling spaces (FS). Specifically, each of the multiple vertical magnetic bodies (VMBs) can be arranged in a corresponding upper filling opening (UFOP) of multiple upper filling openings (UFOPs), a corresponding intermediate filling opening (MFOP) of multiple intermediate filling openings (MFOPs), and a corresponding filling slot (FG) of multiple filling slots (FGs).

[0120] Multiple perpendicular magnetic bodies (VMBs) can substantially fill multiple filling spaces (FS). Each of the multiple perpendicular magnetic bodies (VMBs) can have the same shape as the corresponding filling space (FS) in the multiple filling spaces. The detailed shapes of the multiple perpendicular magnetic bodies (VMBs) will be described in more detail later with reference to additional figures.

[0121] In one embodiment of the invention, the total thickness of the deposition mask DPM can be 0.4 to 4 micrometers thicker than the thickness of the substrate layer BL. This means that the thickness of the layers disposed above and below the substrate layer BL is thinner than the thickness of the substrate layer BL. Therefore, problems that may occur when thick layers are disposed above and below the substrate layer BL can be prevented.

[0122] For example, when thick layers are arranged above and below the substrate layer BL, internal stress may occur in the deposition mask DPM due to the thickness of the layers. Therefore, when thick layers are arranged above and below the substrate layer BL, the flatness of the deposition mask DPM may be reduced, or the deposition mask DPM may be damaged.

[0123] Furthermore, the total thickness of the deposition mask DPM is not limited to this. The deposition mask DPM may also include... Figure 3 Other magnetic layers (not shown), etc. Therefore, the difference in thickness between the deposition mask DPM and the substrate layer BL can be varied.

[0124] Non-transparent regions (NPA) can include mask frames (MF) and mask meshes (MGD).

[0125] The mask frame MF can be the edge portion of the deposition mask DPM. Figure 1a and Figure 1b The portion where the mask arrangement part (MDP) connects. The shape of the mask frame (MF) can be changed according to the shape of the deposition mask (DPM).

[0126] The mask grid MGD can include multiple first mask grids MGD1 and multiple second mask grids MGD2. Multiple filling spaces FS can be defined within the mask grid MGD. Deposited material cannot pass through the mask grid MGD.

[0127] Each of the plurality of first mask meshes MGD1 can extend along a first direction DR1. Each of the plurality of second mask meshes MGD2 can extend along a second direction DR2.

[0128] Since the multiple first mask grids MGD1 and the multiple second mask grids MGD2 extend in different directions, they can intersect each other. In one embodiment of the invention, multiple filling spaces FS can be arranged at the intersection of the multiple first mask grids MGD1 and the multiple second mask grids MGD2.

[0129] Since multiple first mask grids MGD1 and multiple second mask grids MGD2 reinforce each other, the intersections of these grids can be structurally stable. Multiple fill spaces FS are defined within the mask grids MGD at locations that ensure structural stability, thereby ensuring the durability of the deposition mask DPM.

[0130] However, the location of the multiple filling spaces FS is not limited to this. In another embodiment of the invention, the multiple filling spaces FS may be defined at other locations that are not where the multiple first mask grids MGD1 and the multiple second mask grids MGD2 intersect each other.

[0131] Figure 4a An exemplary perspective view of any one of a plurality of vertical magnetic bodies VMB according to an embodiment of the present invention is shown. Figure 4b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies VMB according to an embodiment of the present invention are shown.

[0132] refer to Figure 4a and Figure 4b Each of the plurality of perpendicular magnetic bodies VMBs may include an upper magnetic body UMB and a lower magnetic body LMB. The shape of any one of the plurality of perpendicular magnetic bodies VMBs may be substantially the same as the shape of the corresponding filling space FS in the plurality of filling spaces FS.

[0133] The upper magnetic body UMB may include multiple side surfaces SP and a top surface TP. The upper magnetic body UMB may be arranged corresponding to at least one of the upper filling opening UFOP and the intermediate filling opening MFOP.

[0134] exist Figure 4a In the case of the upper magnetic body UMB, although there are four side surfaces SP, the number of side surfaces SP of the upper magnetic body UMB is not limited to this.

[0135] The lower magnetic body LMB may include multiple inclined surfaces IP1, IP2, IP3, and IP4. The lower magnetic body LMB may be arranged corresponding to the filling groove FG.

[0136] The lower magnetic body LMB, with the Figure 3 The distance between the upper surface TP of the upper UL or upper magnetic body UMB and the lower magnetic body LMB is smaller, resulting in a narrower area on the plane. The shape of the lower magnetic body LMB can be essentially a square pyramid.

[0137] The volume of the upper part of the lower magnetic material LMB can be larger than the volume of the lower part. Therefore, in Figure 1a When the magnet plate MPT is positioned above the lower magnetic body LMB, the magnet plate MPT can more strongly attract the lower magnetic body LMB. As a result, the shape of the lower magnetic body LMB is adjusted, allowing it to... Figure 1a The magnet plate MPT more strongly attracts multiple perpendicular magnetic bodies VMB, and can further improve... Figure 1a The flatness of the deposition using the mask DPM.

[0138] The first inclined surface IP1 can be with Figure 3 The substrate layer BL is in contact with it. The angle between the first inclined surface IP1 and the upper surface of the substrate layer BL can be defined as the first inclined angle. Furthermore, the first inclined surface IP1 is in contact with... Figure 3 The intersection line between the upper surfaces of the base layer BL and the base layer BL can be defined as the first parallel line HL1.

[0139] The second inclined surface IP2 can be with Figure 3 The second inclined surface IP2 is in contact with the upper surface of the substrate layer BL. The angle between the second inclined surface IP2 and the upper surface of the substrate layer BL can be defined as the second inclined angle. Furthermore, the second inclined surface IP2 is in contact with... Figure 3 The intersection line between the upper surfaces of the base layer BL and the base layer BL can be defined as the second parallel line HL2.

[0140] The third inclined surface IP3 can be with Figure 3 The base layer BL is in contact with it. The angle between the third inclined surface IP3 and the upper surface of the base layer BL can be defined as the third inclined angle. Furthermore, the third inclined surface IP3 is in contact with... Figure 3 The intersection line between the upper surfaces of the base layer BL and the base layer can be defined as the third parallel line HL3.

[0141] The fourth inclined surface IP4 can be with Figure 3 The base layer BL is in contact with it. The angle between the fourth inclined surface IP4 and the upper surface of the base layer BL can be defined as the fourth inclined angle. Furthermore, the fourth inclined surface IP4 is in contact with... Figure 3 The intersection line between the upper surfaces of the base layer BL and the base layer can be defined as the fourth parallel line HL4.

[0142] The first to fourth tilt angles can be the same as each other. The first to fourth tilt angles can be greater than 54 degrees and less than 55 degrees. The first tilt surface IP1, the second tilt surface IP2, the third tilt surface IP3, and the fourth tilt surface IP4 can be included with [other surfaces]. Figure 3 The substrate layer BL is connected to the (111) crystal plane of the monocrystalline silicon. Furthermore, each of the first tilted surface IP1, the second tilted surface IP2, the third tilted surface IP3, and the fourth tilted surface IP4 can be connected to... Figure 3 Any one of the multiple mask tilted surfaces MIP is parallel.

[0143] When the first tilt angle to the fourth tilt angle is less than 54 degrees. Figure 2 The width of the mask grid MGD may become wider. Therefore, the efficiency of the deposition process may decrease. When the first tilt angle to the fourth tilt angle is greater than 55 degrees, the effect of increasing the flatness of the deposition mask DPM generated by the shape of multiple lower magnetic bodies LMB may become smaller.

[0144] Any one of the first inclined surface IP1, the second inclined surface IP2, the third inclined surface IP3, and the fourth inclined surface IP4 may not be parallel to each other. Therefore, the first parallel line HL1, the second parallel line HL2, the third parallel line HL3, and the fourth parallel line HL4 can form a quadrilateral on the parallel surfaces. In particular, the first parallel line HL1, the second parallel line HL2, the third parallel line HL3, and the fourth parallel line HL4 can form a rectangle on the upper surface of the base layer BL.

[0145] Figure 5 A flowchart of a method for manufacturing a deposition mask according to an embodiment of the present invention is shown as an example. Figures 6a to 6g These are cross-sectional views schematically illustrating the steps of a method for manufacturing a deposition mask (DPM) according to an embodiment of the present invention.

[0146] refer to Figure 5 The method for manufacturing a deposition mask S100 may include a preparation step S110, a filling opening forming step S120, a filling groove forming step S130, a magnetic material filling step S140, a pattern opening forming step S150, a protective layer forming step S160, and a mask opening forming step S170.

[0147] refer to Figure 5 and Figure 6a In preparation step S110, a base material BM can be prepared, which is formed by stacking a second lower layer LL2, a first lower layer LL1, a base layer BL, an intermediate layer ML, and an upper layer UL. Preparation step S110 may include a base layer preparation step, an oxide film formation step, and a nitride film formation step.

[0148] In the substrate preparation step, a substrate layer BL can be prepared. The substrate layer BL may include monocrystalline silicon. The upper and lower surfaces of the substrate layer BL may be the (100) crystal planes of monocrystalline silicon.

[0149] In the oxide film formation step, an intermediate layer ML can be formed on the substrate layer BL, and a first lower layer LL1 can be formed below the substrate layer BL. The intermediate layer ML and the first lower layer LL1 can comprise silicon oxide.

[0150] In the oxide film formation step, a portion of the substrate layer BL can be oxidized. In the oxide film formation step, the substrate layer BL and an oxygen source can be heated. The oxygen source can supply oxygen to the substrate layer BL to oxidize its surface. The oxygen source can include oxygen gas and water, etc. As a result, the substrate layer BL can be oxidized to form an intermediate layer ML and a first lower layer LL1.

[0151] In the nitride film formation step, an upper UL layer can be formed on the intermediate layer ML, and a second lower layer LL2 can be formed below the first lower layer LL1. The upper UL layer and the second lower layer LL2 can include silicon nitride.

[0152] In the nitride film formation step, low-pressure chemical vapor deposition (LPCVD) can be performed to deposit silicon nitride above the intermediate layer ML and below the first lower layer LL1. In the nitride film formation step, the first lower layer LL1, the substrate layer BL, the intermediate layer ML, and the silicon nitride precursor can be heated. The silicon nitride precursor may include a silicon source and a nitrogen source. The silicon source and nitrogen source can form silicon nitride. The nitrogen source may include ammonia. The silicon source may include silane or dichlorosilane. As a result, silicon nitride can be deposited to form the upper layer UL and the second lower layer LL2.

[0153] refer to Figure 5 and Figure 6b In the filling opening forming step S120, multiple upper filling openings UFOP can be formed in the upper UL layer, and multiple intermediate filling openings MFOP can be formed in the middle ML layer.

[0154] Multiple upper-fill openings (UFOPs) and multiple intermediate-fill openings (MFOPs) can be formed using photolithography and etching processes. In the opening formation step S120, multiple upper-fill openings (UFOPs) and multiple intermediate-fill openings (MFOPs) can be formed to expose the upper surface of the substrate layer BL.

[0155] refer to Figure 5 and Figure 6cIn the filler formation step S130, multiple filler trenches FG can be formed in the substrate layer BL. Multiple filler trenches FG can be formed by an etching process. Specifically, multiple filler trenches FG can be formed by a wet etching process. Compared with dry etching, wet etching has a faster etching speed, lower process cost, and can perform uniform etching. Furthermore, the upper surface of the substrate layer BL can be a (100) crystal plane of monocrystalline silicon, making wet etching easier.

[0156] In the filler formation step S130, the upper surface of the substrate layer BL can be wet-etched to form a plurality of filler trenches FG, and to expose a plurality of filler inclined surfaces FIP among the plurality of side surfaces of the substrate layer BL. In the filler formation step S130, a silicon etchant can be used to wet-etch monocrystalline silicon. The silicon etchant can etch monocrystalline silicon, but cannot etch silicon oxides and silicon nitrides. The silicon etchant can be a solution including at least one of tetramethylammonium hydroxide (TMAH) and potassium hydroxide (KOH).

[0157] Multiple filled tilted surface FIPs can be the (111) crystal plane of monocrystalline silicon. Compared to other crystal planes of monocrystalline silicon, the (111) crystal plane of monocrystalline silicon can be wet-etched more slowly. Therefore, while other crystal planes of monocrystalline silicon are being wet-etched, less wet etching is required for the (111) crystal plane of monocrystalline silicon. As a result, the (111) crystal plane of monocrystalline silicon can be exposed.

[0158] refer to Figure 5 and Figure 6d In the magnetic body filling step S140, multiple vertical magnetic bodies VMB, including magnetic bodies, can be arranged in multiple filling spaces FS.

[0159] exist Figure 6d In this process, the filler can be filled into multiple fill spaces FS to form multiple vertical magnetic bodies VMB. Alternatively, the filler can fill only a portion of the multiple fill spaces FS. For example, the filler can fill only multiple fill slots FG. Furthermore, the filler can be placed on the upper UL after filling the multiple fill spaces FS. When the filler is placed on the upper UL, chemical mechanical polishing can be performed. Therefore, the filler located on the upper UL can be removed.

[0160] refer to Figure 5 and Figure 6e In the pattern opening formation step S150, multiple pattern openings POP and multiple pattern grids PGD can be formed in the upper UL layer. Multiple pattern openings POP can be formed using photolithography and etching processes.

[0161] In the pattern opening formation step S150, the upper surface of the intermediate layer ML can be exposed. Furthermore, the plurality of pattern openings POP can be positioned spaced apart from the plurality of upper fill openings UFOP.

[0162] refer to Figure 5 and Figure 6f In the protective layer forming step S160, a protective layer PL can be formed on the plurality of vertical magnetic bodies VMB and the upper UL. The protective layer PL may include silicon oxide.

[0163] In the protective layer formation step S160, plasma-assisted chemical vapor deposition (PACVD) can be performed to deposit silicon oxide on multiple vertical magnetic bodies VMB and the upper UL. As a result, silicon oxide can be deposited to form the protective layer PL.

[0164] refer to Figures 5 to 6g In the mask opening formation step S170, multiple mask openings MOP can be formed in the second lower layer LL2, the first lower layer LL1, the base layer BL, and the intermediate layer ML, and the protective layer PL is removed. The mask opening formation step S170 may include a lower opening formation step, a base opening formation step, and an upper opening formation step.

[0165] In the lower opening formation step, multiple first lower openings LOP1 can be formed in the first lower layer LL1, and multiple second lower openings LOP2 can be formed in the second lower layer LL2. Furthermore, the lower surface of the substrate layer BL can be exposed. The multiple lower openings LOP1 and LOP2 can be formed using photolithography and etching processes.

[0166] In the substrate opening formation step, the lower surface of the substrate layer BL can be wet-etched to form multiple substrate openings BOP. Furthermore, in the substrate opening formation step, multiple mask tilted surfaces MIP in the lower surface of the intermediate layer ML and multiple side surfaces of the substrate layer BL can be exposed.

[0167] In the substrate opening formation step, a silicon etchant can be used to wet-etch monocrystalline silicon. The side surface of the substrate layer BL can be the (111) crystal plane of monocrystalline silicon.

[0168] In the upper opening formation step, the intermediate layer ML can be wet-etched to form multiple intermediate mask openings MMOP. Furthermore, in the upper opening formation step, the protective layer PL can be wet-etched to remove the protective layer PL. In the upper opening formation step, each of the multiple patterned openings POP can be connected to any one of the multiple mask openings MOP.

[0169] In the upper opening formation step, an oxide etchant can be used to wet-etch silicon oxide. Oxide etchants can etch silicon oxide, but cannot etch single-crystal silicon or silicon nitrides. The oxide etchant can be a buffered oxide etchant (BOE). A buffered oxide etchant (BOE) can include at least one of ammonium fluoride (NH4F) and hydrogen fluoride (HF).

[0170] On the other hand, the method for manufacturing a deposition mask S100 is not limited to the above description. The flowchart of the method for manufacturing a deposition mask S100 may not be limited to the above description. For example, the pattern opening formation step S150 may be performed before at least one of the filling opening formation step S120 and the filling groove formation step S130. Furthermore, the protective layer formation step S160 may be performed after at least one of the lower opening formation step and the substrate opening formation step.

[0171] Furthermore, the method for manufacturing a deposition mask S100 may also include additional steps not shown in the flowchart. For example, the method for manufacturing a deposition mask S100 may also include a step of forming a magnetic layer comprising a magnetic layer above an upper UL and a plurality of vertical magnetic bodies VMB.

[0172] Figure 7 An exemplary view of the upper surface of a substrate SUB according to an embodiment of the present invention is shown.

[0173] refer to Figure 7 The substrate SUB can include multiple display panels (DPs). Furthermore, each of the display panels (DPs) can include multiple pixels (PXs). The substrate SUB can be constructed using... Figure 1a and Figure 1b The deposition apparatus DPA described herein is the object on which the deposition process is performed. The substrate SUB may include a semiconductor wafer. Furthermore, multiple display panels DP may be microdisplay display panels, including OLEDoS.

[0174] Figure 8 A cross-sectional view of a display panel DP manufactured by a deposition apparatus DPA according to an embodiment of the present invention is shown as an example.

[0175] refer to Figure 8 The display panel DP may include a substrate component SBL, a circuit layer CL, a light-emitting element layer ELL, and a packaging layer TFE. Furthermore, the substrate component SBL and the circuit layer CL may include multiple transistors T1 and T2. Figure 8 A portion of the structure of the display panel DP shown in the figure can be constructed by means of... Figure 1a and Figure 1b The structure formed by the deposition process performed by the deposition apparatus DPA described in the text.

[0176] The substrate component SBL may include a semiconductor wafer. Specifically, the substrate component SBL may include a silicon wafer, a compound semiconductor wafer, a silicon carbide wafer, a sapphire wafer, a diamond wafer, etc.

[0177] The substrate component SBL may include a portion of multiple transistors T1 and T2. Specifically, the substrate component SBL may include multiple first source-drain regions SDR1, multiple second source-drain regions SDR2, and multiple channel regions CR.

[0178] Multiple first source-drain regions SDR1 can be formed by doping a portion of the substrate component SBL with impurities. Each of the multiple first source-drain regions SDR1 may include a P-type semiconductor or an N-type semiconductor.

[0179] Multiple second source-drain regions SDR2 may be spaced apart from multiple first source-drain regions SDR1 and formed by doping impurities in another portion of the substrate component SBL. Each of the multiple second source-drain regions SDR2 may include a semiconductor of the same type as the adjacent first source-drain region SDR1.

[0180] Each of the plurality of channel regions CR can be formed by doping impurities in a substrate component SBL located between adjacent first source-drain regions SDR1 and second source-drain regions SDR2. Depending on external conditions, a channel in which electrons or holes can move can be formed in each of the plurality of channel regions CR. Furthermore, each of the plurality of channel regions CR can include a semiconductor of a different type than the adjacent first source-drain regions SDR1 and second source-drain regions SDR2.

[0181] The circuit layer CL may include a gate insulating layer GI, an interlayer insulating layer ILD, a circuit insulating layer VIA, and another portion of a plurality of transistors T1, T2. Specifically, the circuit layer CL may include a control electrode GE, a first electrode ED1, and a second electrode ED2 constituting each of the plurality of transistors T1, T2.

[0182] The gate insulating layer GI can cover the substrate component SBL. The gate insulating layer GI can include at least one of organic films and inorganic films.

[0183] Multiple control electrodes GE constituting each of the multiple transistors T1 and T2 can be arranged on the gate insulating layer GI. The multiple control electrodes GE can overlap with multiple channel regions CR. Through the multiple control electrodes GE, channels can be formed in the multiple channel regions CR.

[0184] The interlayer insulating layer (ILD) can cover the gate insulating layer (GI) and multiple control electrodes (GE). The ILD can include at least one of organic and inorganic films.

[0185] Multiple first electrodes ED1 and multiple second electrodes ED2 constituting each of the multiple transistors T1 and T2 can be arranged on the interlayer insulating layer (ILD). The multiple first electrodes ED1 can be electrically connected to multiple first source-drain regions SDR1. In addition, the multiple second electrodes ED2 can be electrically connected to multiple second source-drain regions SDR2.

[0186] The circuit insulating layer VIA may cover the interlayer insulating layer ILD, multiple first electrodes ED1, and multiple second electrodes ED2. The circuit insulating layer VIA may include at least one of organic and inorganic films.

[0187] A pixel-defining film (PDL) can be disposed on a portion of the circuit insulating layer (VIA). Furthermore, a light-emitting opening (LOP) can be defined in another portion where the PDL is not disposed. Additionally, a light-emitting element (LD) can be formed within the LOP.

[0188] A light-emitting element (LD) can emit light. Furthermore, an LD may include an anode electrode (AE), a hole functional layer (HFL), a light-emitting layer (EML), an electron functional layer (EFL), and a cathode electrode (CE).

[0189] The anode electrode AE ​​can be disposed on a portion of the circuit insulating layer VIA. Specifically, the anode electrode AE ​​can be disposed in the light-emitting opening LOP. Furthermore, the anode electrode AE ​​can be electrically connected to the second electrode ED2.

[0190] exist Figure 8 The first transistor T1 and the second transistor T2 are shown as examples, but the structure of the first transistor T1 and the second transistor T2 is not limited thereto.

[0191] The hole functional layer (HFL) can be disposed on the anode electrode AE. The hole functional layer (HFL) can assist in the movement of holes generated in the anode electrode AE.

[0192] The light-emitting layer (EML) can be disposed on the hole-functional layer (HFL). Light can be emitted from the EML. The EML may include an organic light-emitting material. Therefore, the light-emitting element (LD) can be an organic light-emitting element (organic light-emitting diode).

[0193] The electronic functional layer (EFL) can be arranged on the light-emitting layer (EML). The EFL can assist the movement of electrons generated in the cathode electrode (CE).

[0194] The cathode electrode (CE) can be placed on the electronic functional layer (EFL). The low resistance of the cathode electrode (CE) allows current to flow easily.

[0195] The encapsulation layer TFE can seal the light-emitting element (LD) to protect it from external oxygen or moisture. The encapsulation layer TFE may include a first encapsulation inorganic layer CVD1, an encapsulation organic layer MN, and a second encapsulation inorganic layer CVD2.

[0196] exist Figure 8 The example shows that the encapsulation layer TFE includes two encapsulation inorganic layers CVD1 and CVD2 and one encapsulation organic layer MN, but is not limited thereto.

[0197] The deposition apparatus DPA of the present invention can be used to form at least one of a gate insulating layer GI, an interlayer insulating layer ILD, a circuit insulating layer VIA, a light-emitting layer EML, and an encapsulating organic layer MN, comprising organic material. However, the structures that can be formed by the deposition apparatus DPA of the present invention are not limited thereto. Structures formed by deposition processes in the structure formed in the display panel DP can be formed by the deposition apparatus DPA of the present invention.

[0198] Next, other embodiments of the invention will be described in more detail with reference to the accompanying drawings.

[0199] Figure 9 An exemplary view of the upper surface of a deposition mask DPM-1 according to an embodiment of the present invention is shown.

[0200] refer to Figure 9 In the deposition mask DPM-1, a first region AA1 and a second region AA2 can be defined.

[0201] Multiple vertical magnetic bodies VMB1 and VMB2 can be arranged in the first region AA1.

[0202] Multiple perpendicular magnetic bodies VMB1 and VMB2, and multiple second perpendicular magnetic bodies VMB2, can be arranged in the second region AA2. The second region AA2 can surround the first region AA1.

[0203] Multiple first vertical magnetic bodies VMB1 can be arranged in each space where multiple first mask grids MGD1 and multiple second mask grids MGD2 intersect.

[0204] Multiple second vertical magnetic bodies VMB2 can be arranged in a portion of the space where multiple first mask grids MGD1 and multiple second mask grids MGD2 intersect.

[0205] Therefore, the number of multiple first perpendicular magnetic bodies VMB1 per unit area can be greater than the number of multiple second perpendicular magnetic bodies VMB2 per unit area.

[0206] Furthermore, the volume of the plurality of first perpendicular magnetic bodies VMB1 per unit volume can be greater than the volume of the plurality of second perpendicular magnetic bodies VMB2 per unit volume.

[0207] As a result, in the deposition mask DPM-1, the first region AA1 is more strongly affected by the magnetic field than the second region AA2. Therefore, the first region AA1 can be more strongly affected by the magnetic field than the second region AA2. Figure 1a The magnetic plate MPT is attracted.

[0208] Furthermore, the first region AA1 can be located in the central part of the deposition mask DPM-1. Therefore, due to the fact that in Figure 1a The central portion of the deposition mask DPM-1, which is relatively far from the magnet plate MPT, is more strongly attracted, thus further improving the flatness of the deposition mask DPM-1.

[0209] Figure 10 An exemplary view of the upper surface of a deposition mask DPM-2 according to an embodiment of the present invention is shown.

[0210] refer to Figure 10 The deposition mask DPM-2 may include a plurality of first vertical magnetic bodies VMB1-1 and a plurality of second vertical magnetic bodies VMB2-1.

[0211] The volume of each of the plurality of first perpendicular magnetic bodies VMB1-1 can be greater than the volume of each of the plurality of second perpendicular magnetic bodies VMB2-1.

[0212] Therefore, the volume of the plurality of first perpendicular magnetic bodies VMB1-1 per unit volume can be greater than the volume of the plurality of second perpendicular magnetic bodies VMB2-1 per unit volume.

[0213] As a result, region AA1 in the first region can be more strongly affected than region AA2 in the second region. Figure 1a The magnetic plate MPT attracts the material. Furthermore, the flatness of the DPM-2 deposition mask can be further improved.

[0214] Figure 11a An exemplary view of the upper surface of a deposition mask DPM-3 according to an embodiment of the present invention is shown. Figure 11b An exemplary perspective view of any one of a plurality of first vertical magnetic bodies VMB1-2 according to an embodiment of the present invention is shown. Figure 11c Exemplary top and bottom views are shown of any one of a plurality of first vertical magnetic bodies VMB1-2 according to an embodiment of the present invention.

[0215] refer to Figure 11a The deposition mask DPM-3 may include multiple first vertical magnets VMB1-2 and multiple second vertical magnets VMB2-2.

[0216] Multiple first perpendicular magnetic bodies VMB1-2 can extend along a first direction DR1. Multiple first perpendicular magnetic bodies VMB1-2 can be arranged along multiple first mask grids MGD1.

[0217] Multiple second perpendicular magnetic bodies VMB2-2 can extend along the second direction DR2. Multiple second perpendicular magnetic bodies VMB2-2 can be arranged along multiple second mask grids MGD2.

[0218] Multiple first perpendicular magnetic bodies VMB1-2 and multiple second perpendicular magnetic bodies VMB2-2 can be uniformly arranged on the mask grid MGD. Therefore, multiple first perpendicular magnetic bodies VMB1-2 and multiple second perpendicular magnetic bodies VMB2-2 can be... Figure 1a The magnet plate MPT attracts more evenly. Therefore, the flatness of the DPM-3 deposition mask can be further improved.

[0219] Furthermore, the volumes of the multiple first perpendicular magnetic bodies VMB1-2 and the multiple second perpendicular magnetic bodies VMB2-2 can be relatively large. Therefore, the deposition mask DPM-3 can be... Figure 1a The magnetic plate MPT has a relatively strong attraction. Therefore, the flatness of the DPM-3 deposition mask can be further improved.

[0220] refer to Figure 11b and Figure 11c The plurality of first perpendicular magnetic bodies VMB1-2 extend only in the first direction DR1, and the positional relationship of the plurality of surfaces and the plurality of lines included in the plurality of first perpendicular magnetic bodies VMB1-2 can be related to the plurality of surfaces included in the plurality of first perpendicular magnetic bodies VMB1-2. Figure 4a and Figure 4b The multiple surfaces and multiple lines in the multiple perpendicular magnetic bodies VMB have the same positional relationship.

[0221] For example, in Figure 11b and Figure 11c In this configuration, the first to fourth tilt angles can be the same. The first to fourth tilt angles can be greater than 54 degrees and less than 55 degrees. Furthermore, any one of the first tilted surface IP1, the second tilted surface IP2, the third tilted surface IP3, and the fourth tilted surface IP4 can be non-parallel to each other. Additionally, the first parallel line HL1, the second parallel line HL2, the third parallel line HL3, and the fourth parallel line HL4 can form a quadrilateral located on the parallel surfaces.

[0222] Figure 12A cross-sectional view of a deposition mask DPM-4 according to an embodiment of the present invention is shown as an example.

[0223] refer to Figure 12 The deposition mask DPM-4 may include a magnetic body layer MBL.

[0224] The magnetic material layer (MBL) may include magnetic materials. The MBL may be disposed above the upper UL and multiple vertical magnetic materials (VMBs). The MBL may be formed via a magnetic material layer forming step.

[0225] Because the deposition mask DPM-4 also includes a magnetic body layer MBL, it can be used for deposition. Figure 1a The magnetic plate MPT has a stronger attraction. Therefore, the flatness of the DPM-4 deposition mask can be further improved.

[0226] On the other hand, since the deposition mask DPM-4 includes multiple vertical magnetic bodies VMB, the thickness of the magnetic body layer MBL can be set to be thin. Therefore, problems that may occur when thick layers are arranged above and below the substrate layer BL can be avoided.

[0227] Figure 13a An exemplary perspective view of any one of a plurality of vertical magnetic bodies VMB-1 according to an embodiment of the present invention is shown. Figure 13b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies VMB-1 according to an embodiment of the present invention are shown.

[0228] refer to Figure 13a and Figure 13b Each of the multiple vertical magnetic bodies VMB-1 may include a lower magnetic body LMB-1 in the shape of a frustum of a square pyramid.

[0229] The shape of the lower magnetic body LMB-1 can be a truncated square pyramid. Figure 13a The lower magnetic body LMB-1 can be in Figure 4a The shape of the lower portion of the lower magnetic material LMB is partially removed. Furthermore, the lower portion of the lower magnetic material LMB can be... Figure 1a The magnetic plate MPT has a relatively weak attraction. Therefore, by Figure 13a The flatness of the deposition produced by the lower magnetic material LMB-1 was improved by the mask DPM and the effect of the magnetic material. Figure 4a The effect of increasing the flatness of the deposition produced by the magnetic material LMB using the mask DPM can be similar.

[0230] In addition, in order to form Figure 13a The lower magnetic body LMB-1, shaped like a frustum of a square pyramid, can... Figure 5 and Figure 6cIn the filling groove forming step S130, a frustum-shaped filling groove FG is formed. Furthermore, the time required to form the frustum-shaped filling groove FG can be less than the time required to form the pyramid-shaped filling groove FG. Additionally, it is possible to... Figure 5 and Figure 6d In the magnetic filling step S140, a relatively small amount of magnetic material is used to form a lower magnetic material LMB-1 in the shape of a truncated pyramid.

[0231] Therefore, the frustum-shaped lower magnetic body LMB-1 can be formed using less time and less material than the pyramid-shaped lower magnetic body LMB. However, the flatness increase effect of the deposition mask DPM produced by the frustum-shaped lower magnetic body LMB-1 can be similar to the flatness increase effect of the deposition mask DPM produced by the pyramid-shaped lower magnetic body LMB.

[0232] Figure 14a An exemplary perspective view of any one of the plurality of vertical magnetic bodies VMB-2 according to an embodiment of the present invention is shown. Figure 14b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies VMB-2 according to an embodiment of the present invention are shown.

[0233] refer to Figure 14a and Figure 14b A portion of the multiple vertical magnetic bodies VMB-2 may include multiple rounded corners. Specifically, multiple corners located at the lower part of the lower magnetic body LMB-2 may be rounded.

[0234] Figure 1a and Figure 1b To improve the flatness of the deposition mask DPM, the deposition apparatus DPA can be stretched along the first direction DR1 and the second direction DR2. Furthermore, when stretching the deposition mask DPM, stress may be applied to multiple perpendicular magnetic bodies VMB-2.

[0235] Therefore, stress may concentrate at multiple corners of the multiple vertical magnetic bodies VMB-2. Consequently, multiple corners of the multiple vertical magnetic bodies VMB-2 may be damaged. However, if a portion of the multiple corners of the multiple vertical magnetic bodies VMB-2 are rounded, the stress applied to the multiple rounded corners of the multiple vertical magnetic bodies VMB-2 can be dispersed. Therefore, damage to the multiple vertical magnetic bodies VMB-2 can be prevented.

[0236] Figure 15a An exemplary perspective view of any one of a plurality of vertical magnetic bodies VMB-3 according to an embodiment of the present invention is shown. Figure 15bExemplary top and bottom views of any one of a plurality of vertical magnetic bodies VMB-3 according to an embodiment of the present invention are shown.

[0237] refer to Figure 15a and Figure 15b A portion of the multiple vertical magnetic bodies VMB-3 may include multiple rounded corners. Specifically, multiple corners where multiple side surfaces SP of the upper magnetic body UMB-1 meet and multiple corners where multiple inclined surfaces IP1, IP2, IP3, and IP4 of the lower magnetic body LMB-3 meet can be rounded.

[0238] Multiple rounded corners of the VMB-3, a plurality of perpendicular magnetic bodies, can be formed by the following method. Figure 5 and Figure 6b In the filling opening forming step S120, multiple upper filling openings UFOP and multiple intermediate filling openings MFOP can be formed, each having multiple rounded corners.

[0239] exist Figure 5 and Figure 6c In the filling groove forming step S130, multiple filling grooves FG can be formed according to the shape of the upper filling opening UFOP and multiple intermediate filling openings MFOP.

[0240] As a result, the shapes of the multiple upper-filled openings (UFOP) and the multiple middle-filled openings (MFOP) are adjusted, thereby forming multiple rounded corners in the multiple vertical magnetic bodies (VMB-3). Therefore, damage to the multiple vertical magnetic bodies (VMB-3) can be prevented.

[0241] Figure 16a An exemplary perspective view of any one of a plurality of vertical magnetic bodies VMB-4 according to an embodiment of the present invention is shown. Figure 16b Exemplary top and bottom views of any one of a plurality of vertical magnetic bodies VMB-4 according to an embodiment of the present invention are shown.

[0242] refer to Figure 16a and Figure 16b Multiple vertical magnetic bodies VMB-4 may include portions whose cross-sectional area increases as they move downwards.

[0243] Therefore, each of the multiple perpendicular magnetic bodies VMB-4 can include with Figure 3 The multiple upper-filled openings of the UFOP do not overlap.

[0244] Specifically, the lower magnetic body LMB may include [a component that is] similar to [a magnetic material]. Figure 3The portions of the multiple upper filling openings (UFOPs) that do not overlap. Additionally, the area of ​​the upper surface of the lower magnetic body LMB can be larger than the area of ​​the lower surface of the upper magnetic body UMB-2. The portions of the lower magnetic body LMB that do not overlap with the multiple upper filling openings (UFOPs) can be formed through the following process.

[0245] exist Figure 5 and Figure 6c In the filling trench formation step S130, undercutting can occur during the wet etching of the substrate layer BL. Therefore, a portion of the multiple filling trenches FG can not overlap with the upper filling opening UFOP.

[0246] exist Figure 5 and Figure 6d In the magnetic filling step S140, multiple vertical magnetic bodies VMB-4 can be arranged in multiple filling spaces FS. Therefore, the lower magnetic body LMB can form a portion that does not overlap with the upper filling opening UFOP.

[0247] On the other hand, when the interface between the lower magnetic material LMB and the substrate BL is unstable, the deposition mask DPM is... Figure 1a During the attraction process of the magnet plate MPT, the interface between the lower magnetic material LMB and the substrate layer BL may be stripped. Furthermore, when the deposition mask DPM is exposed to high temperatures or stretched along the first direction DR1 and the second direction DR2, the interface between the lower magnetic material LMB and the substrate layer BL may be stripped.

[0248] Consequently, multiple vertical magnetic bodies VMB-4 may separate from the deposition mask DPM, thereby damaging the deposition mask DPM.

[0249] However, interference can occur with the intermediate layer ML and the upper layer UL during the upward attraction of multiple vertical magnetic bodies VMB-4. Therefore, the phenomenon of multiple vertical magnetic bodies VMB-4 separating from the deposition mask DPM can be prevented.

[0250] Figure 17 An exemplary perspective view of any one of a plurality of vertical magnetic bodies VMB-5 according to an embodiment of the present invention is shown.

[0251] Each of the plurality of perpendicular magnetic bodies VMB-5 may include a conical lower magnetic body LMB-4 and a cylindrical upper magnetic body UMB-3. Each of the plurality of perpendicular magnetic bodies VMB-5 may be formed by the following process.

[0252] exist Figure 5 and Figure 6bIn the filling opening forming step S120, multiple upper filling openings UFOP and multiple intermediate filling openings MFOP in cylindrical shape can be formed.

[0253] exist Figure 5 and Figure 6c In the filling groove forming step S130, the substrate layer BL may include a polymer material, polycrystalline silicon, amorphous silicon, etc. Multiple conical filling grooves FG can be formed according to the shapes of the upper filling opening UFOP and the multiple intermediate filling openings MFOP.

[0254] As a result, the shape of the multiple vertical magnets VMB-5 can be changed depending on the material that makes up the base layer BL.

[0255] Although described with reference to embodiments, those skilled in the art will understand that various modifications and alterations can be made to the invention without departing from the spirit and scope of the invention as set forth in the appended claims. Furthermore, the embodiments disclosed herein are not intended to limit the technical concept of the invention, but should be interpreted as including within the scope of the appended claims and all technical concepts equivalent to them within the scope of the invention.

Claims

1. A deposition mask, comprising: A base layer, defining a plurality of base openings and a plurality of filling grooves, each of the filling grooves being arranged between the plurality of base openings; The upper layer is defined with multiple transparent and non-transparent regions. The multiple transparent regions allow the deposited material to pass through them. The non-transparent regions surround the multiple transparent regions. The multiple transparent regions overlap with the multiple substrate openings respectively. The multiple transparent regions each include multiple patterned openings. The non-transparent regions each include multiple upper filling openings that overlap with the multiple filling grooves respectively. as well as A plurality of vertical magnetic bodies, each of which is arranged in a corresponding upper filling opening of a plurality of upper filling openings and a corresponding filling slot of a plurality of filling slots, wherein at least a portion of each of the plurality of vertical magnetic bodies has a shape in which the cross-sectional area decreases as it moves away from the upper layer.

2. The deposition mask according to claim 1, wherein, The plurality of base openings have a shape that widens as they move away from the upper layer.

3. The deposition mask according to claim 2, wherein, Each of the plurality of vertical magnets includes a plurality of inclined surfaces in contact with the base layer. The intersection line between the plurality of inclined surfaces and the upper surface of the base layer forms a rectangle.

4. The deposition mask according to claim 2, wherein, Each of the plurality of vertical magnets includes a plurality of inclined surfaces in contact with the base layer. Each of the plurality of inclined surfaces forms an angle of more than 54 degrees and less than 55 degrees with the surface parallel to the upper surface of the base layer.

5. The deposition mask according to claim 2, wherein, The deposition mask also includes: An intermediate layer is defined with a plurality of intermediate mask openings and a plurality of intermediate fill openings, wherein the plurality of intermediate mask openings overlap with the plurality of base openings, and the plurality of intermediate fill openings overlap with the plurality of fill grooves, and the intermediate layer is disposed between the base layer and the upper layer; A first lower layer is disposed below the base layer and defines a plurality of first lower openings, the plurality of first lower openings overlapping the plurality of base openings respectively; and The second lower layer is arranged below the first lower layer and defines a plurality of second lower openings, which overlap with the plurality of first lower openings respectively.

6. The deposition mask according to claim 5, wherein, The substrate layer comprises monocrystalline silicon. The upper surface of the substrate layer is a (100) Miller index crystal plane in the single crystal silicon. The intermediate layer comprises silicon oxide. The upper layer comprises silicon nitride. The first lower layer comprises silicon oxide. The second lower layer comprises silicon nitride.

7. The deposition mask according to claim 6, wherein, The substrate layer includes a plurality of filled tilted surfaces defining the plurality of filled trenches, each of the plurality of filled tilted surfaces being a (111) Miller index crystal plane in the monocrystalline silicon.

8. The deposition mask according to claim 2, wherein, The deposition mask also includes: A magnetic layer is arranged on the plurality of vertical magnetic bodies.

9. A method for manufacturing a deposition mask, wherein, include: Preparation steps: Prepare the base material, which includes a base layer, an intermediate layer disposed on the base layer, an upper layer disposed on the intermediate layer, a first lower layer disposed below the base layer, and a second lower layer disposed below the first lower layer; The filling opening forming step involves forming a plurality of upper filling openings in the upper layer, forming a plurality of intermediate filling openings in the intermediate layer that overlap with the plurality of upper filling openings, and exposing the upper surface of the base layer. In the filler groove forming step, the exposed upper surface of the substrate layer is etched to form a plurality of filler grooves that overlap with the plurality of intermediate filler openings, each of the plurality of filler grooves having a shape in which the cross-sectional area decreases as it moves toward the lower portion; The magnetic body arrangement step involves arranging multiple vertical magnetic bodies in the multiple filling slots; The pattern opening forming step involves forming a plurality of pattern openings in the upper layer that are positioned at intervals from the plurality of upper filling openings; The protective layer forming step involves forming a protective layer on the plurality of vertical magnetic bodies and the upper layer; as well as The mask opening forming step involves forming a plurality of mask openings that overlap with the plurality of pattern openings in the first lower layer, the second lower layer, the base layer, and the intermediate layer, and removing the protective layer.

10. The method for manufacturing a deposition mask according to claim 9, wherein, The preparation steps include: The substrate preparation step involves preparing the substrate, which comprises monocrystalline silicon, and the upper and lower surfaces of the substrate are crystal planes of the monocrystalline silicon with a Miller index of (100). The oxide film formation step involves oxidizing the upper surface and the lower surface of the substrate layer to form an intermediate layer comprising silicon oxide on the upper surface of the substrate layer and a first lower layer comprising silicon oxide on the lower surface of the substrate layer; and The nitride film formation step involves performing low-pressure chemical vapor deposition on the upper surface of the intermediate layer to form an upper layer comprising silicon nitride, and performing low-pressure chemical vapor deposition on the lower surface of the first lower layer to form a second lower layer comprising silicon nitride. In the filling trench forming step, the upper part of the substrate layer is wet-etched to expose the (111) Miller index crystal plane in the monocrystalline silicon.

Images