Semiconductor processing apparatus and magnetron mechanism therefor

Abstract

Embodiments of the present application provide a semiconductor processing equipment and a magnetron mechanism thereof. The magnetron mechanism is applied to the semiconductor processing equipment, and comprises a back plate, an outer magnetic pole, an inner magnetic pole and a driving device. The outer magnetic pole is arranged on the bottom surface of the back plate and surrounds a containing space on the bottom surface. The inner magnetic pole is movably arranged on the bottom surface of the back plate and located in the containing space. The driving device is arranged on the top surface of the back plate and connected with the inner magnetic pole, and is used for driving the inner magnetic pole to move in the containing space. In the movement process, the distance between the inner magnetic pole and the outer magnetic pole is always greater than a preset first distance. The embodiments of the present application realize full target erosion of the target material. Since the reverse sputtering is avoided, the generation of process particles in the process is also effectively reduced, so that the embodiments of the present application can meet the demand of process particle control, and thus the thickness uniformity of the process result can be effectively improved.

Description

[0001] This application is a divisional application filed based on the invention patent application with application number 202010331542.2, application date of April 24, 2020, entitled "Semiconductor Processing Equipment and its Magnetron Mechanism". Technical Field

[0002] This application relates to the field of semiconductor processing technology, and more specifically, to a semiconductor processing apparatus and its magnetron mechanism. Background Technology

[0003] Currently, with the large-scale development of integrated circuit technology and the continuous shrinking of chip critical dimensions, copper interconnect manufacturing processes face increasing challenges. To ensure the compactness and structural integrity of copper interconnect structures below 16nm (nanometers) and smaller, more advanced hard mask processes are required. In more advanced manufacturing processes, the main role of the hard mask process is to maintain the pattern integrity of copper lines and vias in relatively soft, ultra-low-k dielectric materials. However, as chip dimensions continue to shrink, traditional titanium nitride (TiN) hard mask films have several problems and are unsuitable for more advanced integrated circuit processes. On the one hand, traditional hard mask films have low density, requiring a thicker deposition thickness during film preparation. This significantly increases the aspect ratio of etched vias and increases the difficulty of subsequent processes such as filling the vias with conductive metal layers. Therefore, it is urgent to increase the density of hard mask films to reduce film deposition thickness and minimize the aspect ratio of etched vias. On the other hand, the compressive stress after deposition of traditional hard mask films may cause deformation or collapse of the narrow copper line patterns in the dielectric film. Therefore, in order to maintain the consistency of etching, there is an urgent need to prepare denser TiN hard masks with greater tensile stress to adapt to more advanced integrated circuit processes.

[0004] In integrated circuit manufacturing, Physical Vapor Deposition (PVD) technology is widely used for depositing various metal layers, hard masks, and other related material layers due to its superior thin film consistency and uniformity, wider process window, and ability to achieve high aspect ratio via filling. Traditional PVD equipment uses direct current (DC) sputtering for TiN thin film preparation, with a low sputtering pressure of 0.1–10 mTorr (millitort, 1 Torr ≈ 133.32 Pa). This results in lower requirements for particle control, and the films are mostly under compressive stress with low density. Therefore, the requirements for the magnetron mechanism and process method are also relatively low. However, in the 14nm process, achieving high-density, low-tensile-stress, and more stringent process particle contamination control of TiN thin films requires not only high sputtering pressures (100–250 mTorr), but also higher process temperatures and better magnetron control to achieve full-target etching. Additionally, biased radio frequency (RF) sputtering is necessary. Therefore, the demands on the magnetron mechanism and process methods are relatively high. The magnetron needs to achieve full-target etching of the target material under high pressure and in RF and / or DC (RF+ / DC) sputtering environments, while simultaneously achieving good thickness uniformity and other properties.

[0005] Existing PVD equipment can only be used for low-pressure DC or RF sputtering processes. Under RF+DC and high-pressure sputtering conditions, its thickness uniformity is poor and cannot meet the requirements. Furthermore, when used for sputtering TiN thin films under high-pressure conditions, it is easy to cause incomplete etching of the target material during the sputtering process, resulting in serious over-standard particle size and making it unsuitable for 14nm processes. Summary of the Invention

[0006] This application addresses the shortcomings of existing methods by proposing a semiconductor processing equipment and its magnetron mechanism to solve the technical problems of existing technologies, such as the inability to achieve full-target etching, excessive process particles, and poor thickness uniformity.

[0007] In a first aspect, embodiments of this application provide a magnetron mechanism applied in semiconductor processing equipment, including a backplate, an outer magnetic pole, an inner magnetic pole, and a driving device; the outer magnetic pole is disposed on the bottom surface of the backplate and forms an accommodating space on the bottom surface; the inner magnetic pole is movably disposed on the bottom surface of the backplate and located within the accommodating space; the driving device is disposed on the top surface of the backplate and connected to the inner magnetic pole, used to drive the inner magnetic pole to move within the accommodating space, wherein the distance between the inner magnetic pole and the outer magnetic pole is always greater than a preset first distance during the movement; the outer magnetic pole is composed of multiple outer magnets and multiple outer magnetic strips, the multiple outer magnets are connected by the outer magnetic strips to form the accommodating space, and the outer magnetic pole is disconnected at both ends; the inner magnetic pole is composed of multiple inner magnets and multiple inner magnetic strips, the inner magnets are connected by the inner magnetic strips; the inner magnetic pole and the outer magnetic pole are not equally spaced.

[0008] In one embodiment of this application, the driving device is used to drive the inner magnetic pole as a whole to move between a plurality of preset positions in the accommodating space along a straight direction.

[0009] In one embodiment of this application, the plurality of preset positions include a first position, a second position, and a third position arranged along a straight line. The second position and the third position are respectively located on both sides of the first position, and the second position and the third position have a second distance from the first position.

[0010] In one embodiment of this application, the driving device includes a driving part and a connecting member. The driving part is disposed on the top surface of the back plate, and the connecting member passes through the back plate, with one end connected to the driving part and the other end connected to the inner magnetic pole. The driving part is used to drive the connecting member to move, thereby driving the inner magnetic pole to move.

[0011] In one embodiment of this application, the driving device further includes a guide rail disposed on the top surface of the back plate, and the connector is disposed on the top surface of the back plate via the guide rail, the guide rail being used to guide the connector.

[0012] In one embodiment of this application, the driving unit is a stepper motor, a servo motor, or a lead screw motor.

[0013] In one embodiment of this application, the first spacing is greater than or equal to 10 millimeters.

[0014] In one embodiment of this application, the inner magnetic pole and the outer magnetic pole are not equally spaced, and the distance between the inner magnetic pole and the outer magnetic pole is 30 to 60 mm.

[0015] In one embodiment of this application, the inner magnetic poles are disconnected at both ends.

[0016] Secondly, embodiments of this application provide a semiconductor processing apparatus, including a process chamber and a magnetron mechanism as provided in the first aspect, the magnetron mechanism being disposed at the top of the process chamber.

[0017] The beneficial technical effects of the technical solutions provided in this application are: In this embodiment, the outer magnetic poles enclose a receiving space on the back plate, while the inner magnetic poles can move within this receiving space. Because the inner magnetic poles can move within this space, severe backsplashing can be effectively avoided at the target location directly below the magnetic poles of the magnetron mechanism under high pressure. This effectively prevents the formation of non-corroded areas on the target, thus enabling full-target corrosion. Furthermore, by avoiding backsplashing, the generation of process particles during the process is effectively reduced, allowing this embodiment to meet the requirements for process particle control and thereby effectively improving the thickness uniformity of the final result.

[0018] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of a magnetron mechanism provided in an embodiment of this application; Figure 2 A partial cross-sectional schematic diagram of a magnetron mechanism provided in an embodiment of this application; Figure 3 This is a schematic diagram showing the comparison of process results for a magnetron mechanism provided in an embodiment of this application. Detailed Implementation

[0021] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this application.

[0022] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments.

[0023] This application provides a magnetron mechanism applied in semiconductor processing equipment. A schematic diagram of the magnetron mechanism is shown below. Figure 1 , 2 As shown, it includes: a back plate 1, an outer magnetic pole 2, an inner magnetic pole 3, and a driving device 5; the outer magnetic pole 2 is disposed on the bottom surface of the back plate 1 and forms an accommodating space 4 on the bottom surface; the inner magnetic pole 3 is movably disposed on the bottom surface of the back plate 1 and is located within the accommodating space 4; the driving device 5 is disposed on the top surface of the back plate 1 and connected to the inner magnetic pole 3, and is used to drive the inner magnetic pole 3 to move within the accommodating space 4, wherein the distance between the inner magnetic pole 3 and the outer magnetic pole 2 during the movement is always greater than a preset first distance.

[0024] like Figure 1 As shown, the backplate 1 is a rectangular plate structure made of metal. The center of the top surface of the backplate 1 can be connected to a rotary drive mechanism (not shown) of a semiconductor processing equipment, allowing the backplate 1 to rotate under the drive of the rotary drive mechanism. However, this embodiment does not limit the material and shape of the backplate 1 or the connection position of the drive mechanism. For example, the rotary drive mechanism can also be connected to one side of the top surface of the backplate 1. Therefore, this embodiment is not limited thereto, and those skilled in the art can adjust the settings according to actual conditions.

[0025] Specifically, the outer magnetic pole 2 consists of multiple outer magnets 21 and outer magnetic strips 22. The multiple outer magnets 21 are connected by the outer magnetic strips 22 to be arranged on the bottom surface of the back plate 1 to enclose the accommodating space 4. The specific arrangement shape is as follows: Figure 1 The shape is shown. The outer magnetic strip 22 is made of stainless steel and has multiple mounting holes for fixing the outer magnet 21. Specifically, the inner magnetic pole 3 consists of multiple inner magnets 31 and inner magnetic strips 32. The multiple inner magnets 31 are connected to the back plate 1 via the inner magnetic strips 32, and the inner magnetic poles 3 are located within the accommodating space 4. Their arrangement is shown in the figure. Figure 1 The shape shown is as indicated. The inner magnetic strip 32 is also made of stainless steel, and multiple mounting holes for fixing the inner magnet 31 are provided on the inner magnetic strip 32. The driving device 5 is disposed on the top surface of the back plate 1 and connected to the inner magnetic pole. It is used to drive the inner magnetic pole 3 to move relative to the back plate 1. Therefore, the inner magnetic pole 3 can move within the accommodating space 4, and the distance between the inner magnetic pole 3 and the outer magnetic pole 2 is always greater than the preset first distance. That is, no matter how the inner magnetic pole 3 moves, it always maintains a distance from the outer magnetic pole 2, thereby effectively avoiding the interruption of light in the process chamber of the semiconductor processing equipment.

[0026] In this embodiment, the outer magnetic poles enclose a receiving space on the back plate, while the inner magnetic poles can move within this receiving space. Because the inner magnetic poles can move within this space, severe backsplashing can be effectively avoided at the target location directly below the magnetic poles of the magnetron mechanism under high pressure. This effectively prevents the formation of non-corroded areas on the target, thus enabling full-target corrosion. Furthermore, by avoiding backsplashing, the generation of process particles during the process is effectively reduced, allowing this embodiment to meet the requirements for process particle control and thereby effectively improving the thickness uniformity of the final result.

[0027] In one embodiment of this application, as Figure 1 As shown, the outer magnetic pole 2 is disconnected at both ends.

[0028] In one embodiment of this application, as Figure 1 As shown, the outer magnetic pole 2 includes an outer arc portion and an inner arc portion. The outer arc portion is located on the side of the inner magnetic pole 3 closest to the edge of the target surface, and the inner arc portion is located on the side of the inner magnetic pole 3 closest to the center of the target surface. One end of the outer arc portion is connected to the inner arc portion, and the other end is disconnected from the inner arc portion. The outer arc portion and the inner arc portion form the aforementioned accommodating space.

[0029] In one embodiment of this application, as Figure 1 As shown, the inner magnetic pole 3 is a planar spiral, with one end of the inner magnetic pole 3 close to the center of the target surface and the other end close to the edge of the target surface.

[0030] Furthermore, due to the aforementioned advantages, the embodiments of this application can be applied to RF+ / DC sputtering under high pressure (100-250mT), which not only enables full-target etching of the target material, but also meets the requirements of 14nm process for thickness uniformity and more stringent process particle control, thereby meeting the needs of more advanced integrated circuit processes.

[0031] It should be noted that the embodiments of this application do not limit the arrangement of the outer magnetic poles 2 and the inner magnetic poles 3 on the back plate 1. They can be arranged in various shapes according to requirements, but it is necessary to ensure that the accommodating space 4 between any two adjacent outer magnetic poles 2 contains an inner magnetic pole 3. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0032] In one embodiment of this application, as Figure 1 and Figure 2 As shown, the driving device 5 is used to drive the inner magnetic pole 3 to move along a straight line between multiple preset positions within the accommodating space 4. The driving device 5 is mounted on the back plate 1 and can drive the inner magnetic pole 3 to move along a straight line between multiple preset positions. For example, this straight line direction is as follows: Figure 1As shown, the inner magnetic pole 3 moves vertically along the back plate 1. With the above design, since the driving device 5 drives the inner magnetic pole 3 to move as a whole, the embodiment of this application not only has a simple structure and is easy to control, but also further improves the overall corrosion rate of the target material and reduces the generation of process particles, thereby effectively improving the thickness uniformity of the process result.

[0033] It should be noted that the embodiments of this application do not limit the direction and manner of movement of the inner magnetic pole 3. For example, the inner magnetic pole 3 can move along the left and right direction of the back plate 1, or the inner magnetic pole 3 can move in segments. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0034] In one embodiment of the application, such as Figure 1 As shown, multiple preset positions include a first position P1, a second position P2, and a third position P3 arranged side by side in a straight line, with the second position P2 and the third position P3 located on either side of the first position P1. Optionally, the second position P2 and the third position P3 each have a second distance from the first position P1. Specifically, the first position P1 is located in the middle, the second position P2 is located below the first position P1, and the third position P3 is located above the first position P1. Since the inner magnetic pole 2 moves within the accommodating space 4, there must be a certain distance between the inner magnetic pole 2 and the outer magnetic pole 1 to avoid collision between the inner magnetic pole and the outer magnetic pole when the inner magnetic pole moves. By adopting the above design, the embodiments of this application can ensure full-target corrosion of the target material while also making the structure of the embodiments of this application simple and easy to use, thereby effectively improving the cost of application and maintenance.

[0035] It should be noted that the embodiments of this application do not limit the specific number of multiple positions, which can be adjusted according to the arrangement of the outer magnetic pole 2 and the inner magnetic pole 3, as well as the distance between them. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0036] To illustrate the embodiments of this application, the following description is based on a specific implementation of this application. Figure 1 The dashed line indicates the area covered by the magnetron mechanism during rotation, i.e., the target corrosion zone. (Refer to reference.) Figure 1As shown in Table 1, the non-corrosion areas of the inner magnetic pole 3 vary in the first position P1, the second position P2, and the third position P3. In the first position P1, the non-corrosion areas of the target material are at radii of 35–50 mm, 102–110 mm, and 140–150 mm, respectively. In the second position P2, the non-corrosion areas are at radii of 90–100 mm and 145–160 mm, respectively. In the third position P3, the non-corrosion areas are at radii of 30–50 mm and 105–125 mm, respectively. This allows the inner magnetic pole 3 to corrode the R1 and R2 positions of the non-corrosion areas in the first and third positions P1 and P3 when in the second position P2. Furthermore, in the third position P3, the inner magnetic pole 3 can corrode the R3 position of the non-corrosion area in the second position P2. Therefore, if the magnetron mechanism achieves alternating changes in the three positions during the process, different areas of the target material can be corroded at different positions, resulting in a full target corrosion effect.

[0037] Table 1 like Figure 3 As shown, when the inner magnetic pole 3 is in three different positions, the film uniformity is within 3.00%, specifically 2.1%, 3.00%, and 1.88%. Therefore, during the process, the film deposition result when the three positions are alternately moved will be better than 3%. As shown in the figure, when the alternating movement time of the three positions is the same, the process result obtained is 1.58%, which is better than the uniformity result when the inner magnetic pole 3 is in a single position.

[0038] In one embodiment of this application, the driving device 5 includes a driving part 51 and a connecting member 52. The driving part 51 is disposed on the top surface of the back plate 1, and the connecting member 2 penetrates through the back plate 1, with one end connected to the driving part 51 and the other end connected to the inner magnetic pole 3. The driving part 51 is used to drive the connecting member 52 to move, thereby driving the inner magnetic pole 3 to move. Optionally, the driving device 5 further includes a guide rail, which is disposed on the top surface of the back plate 1. The connecting member 53 is disposed on the top surface of the back plate 1 via the guide rail, and the guide rail is used to guide the connecting member 52.

[0039] like Figure 1 and Figure 2As shown, the drive unit 51 can be a stepper motor, which is disposed on the top surface of the back plate 1 and drives the inner magnetic pole 3 to move between multiple preset positions. Specifically, the inner magnetic pole 3 moves within the accommodating space 4 enclosed by the outer magnetic pole 2 under the drive of the drive unit 51 and the connecting member 52. The outer magnetic pole 2 is fixed to the bottom surface of the back plate 1, and the back plate 1 is hollowed out in the range of movement of the inner magnetic pole 3. One end of the connecting member 52 is connected to the drive unit 51, and the other end is connected to the inner magnetic pole 3. The connecting member 52 can also be fixed to the drive unit 51 by a guide rail (not shown in the figure). The distance the drive unit 51 moves is controlled by a signal, so that the inner magnetic pole 3 moves under the guidance of the guide rail. The movement of the inner magnetic pole 3 is as follows: Figure 1 The up and down directions shown in the figure are due to Figure 2 This is a cross-sectional view of the magnetron mechanism; therefore, the direction of movement of the inner magnetic pole 3 is as follows: Figure 2 The left and right directions are shown. (Refer to...) Figure 1 As shown, the inner magnetic pole 3 is located at the first position P1. It can be driven by the driving unit 51 to move downward by 12.5 mm and then move to the second position P2. It can also be driven by the driving unit 51 to move upward by 12.5 mm and then move to the third position P3. That is, the second spacing can be 12.5 mm. However, it should be noted that the embodiments of this application are not limited to this. Those skilled in the art can adjust the settings according to the arrangement of the outer magnetic pole 2 and the inner magnetic pole 3 and different process requirements.

[0040] In one embodiment of this application, the drive unit 51 can be a stepper motor, a servo motor, or a lead screw motor. Using different types of drive units can effectively expand the applicability of the embodiments of this application, thereby effectively reducing application and maintenance costs.

[0041] In one embodiment of this application, the first distance is greater than 10 mm. When the inner magnetic pole 3 moves, the first distance between the inner magnetic pole 3 and the outer magnetic pole 2 should be at least greater than 10 mm to avoid intermittent glow due to the inner magnetic pole 3 and the outer magnetic pole 2 being too close. This design can effectively avoid intermittent glow during the process, resulting in poor process uniformity, thereby effectively improving the uniformity of the process results. In addition, it can also effectively reduce the failure rate, thereby improving economic efficiency.

[0042] In one embodiment of this application, the inner magnetic pole 3 and the outer magnetic pole 2 are not equally spaced, and the distance between the inner magnetic pole 3 and the outer magnetic pole 2 is 30-60 mm. Optionally, the inner magnetic pole 3 is disconnected at both ends.

[0043] like Figure 1As shown, the inner magnetic pole 3 is nested within the accommodating space 4 surrounded by the outer magnetic pole 2, with the inner magnetic pole 3 open at both ends and the outer magnetic pole 2 closed at both ends. Furthermore, the inner magnetic pole 3 and the outer magnetic pole 2 are not equidistantly spaced; the distance between them can be between 30 and 60 mm, for example, combinations of 35 mm, 40 mm, 42 mm, 48 mm, 53 mm, 55 mm, 58 mm, and 60 mm. However, this embodiment is not limited to this; any distance between the inner magnetic pole 3 and the outer magnetic pole 2 within the range of 30 to 60 mm is acceptable. This design makes this embodiment more suitable for performing processes under high pressure, thereby effectively improving the corrosion rate of the target material and reducing the generation of process particles.

[0044] It should be noted that the embodiments of this application do not necessarily require the inner magnetic pole 3 and the outer magnetic pole 2 to be arranged with non-equidistant spacing. For example, the inner magnetic pole 3 and the outer magnetic pole 2 can also be arranged with equal spacing to suit other process environments. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust the settings according to different working conditions.

[0045] Based on the same inventive concept, this application provides a semiconductor processing apparatus, including a process chamber and a magnetron mechanism as provided in the above embodiments, wherein the magnetron mechanism is disposed on the top of the process chamber.

[0046] By applying the embodiments of this application, at least the following beneficial effects can be achieved: In this embodiment, the outer magnetic poles enclose a receiving space on the back plate, while the inner magnetic poles can move alternately between multiple positions within the receiving space. Because the inner magnetic poles can move within the receiving space, severe backsplashing can be effectively avoided at the target position directly below the magnetic poles of the magnetron mechanism under high pressure, thus effectively preventing the formation of non-corroded areas on the target and enabling full-target corrosion. Furthermore, by avoiding backsplashing, the generation of process particles during the process is effectively reduced, allowing this embodiment to meet the requirements for process particle control and thereby effectively improving the thickness uniformity of the process results.

[0047] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

[0048] In the description of this application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0049] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0050] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0051] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0052] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A magnetron mechanism, applied in semiconductor processing equipment, characterized in that, Includes a backplate, outer magnetic poles, inner magnetic poles, and a drive unit; The external magnetic poles are disposed on the bottom surface of the back plate and form an accommodating space on the bottom surface; The inner magnetic pole is movably disposed on the bottom surface of the back plate and located within the accommodating space; The driving device is disposed on the top surface of the back plate and connected to the inner magnetic pole, and is used to drive the inner magnetic pole to move within the accommodating space, wherein the distance between the inner magnetic pole and the outer magnetic pole is always greater than a preset first distance during the movement. The outer magnetic pole is composed of multiple outer magnets and multiple outer magnetic strips. The multiple outer magnets are connected by the outer magnetic strips to form the accommodating space, and the outer magnetic poles are disconnected at both ends. The inner magnetic pole is composed of multiple inner magnets and multiple inner magnetic strips. The inner magnets are connected by the inner magnetic strips. The inner magnetic poles and the outer magnetic poles are not equidistant.

2. The magnetron mechanism as described in claim 1, characterized in that, The driving device is used to drive the entire inner magnetic pole to move along a straight line between multiple preset positions within the accommodating space.

3. The magnetron mechanism as described in claim 2, characterized in that, The plurality of preset positions include a first position, a second position, and a third position arranged along a straight line. The second position and the third position are respectively located on both sides of the first position, and the second position and the third position are each separated from the first position by a second distance.

4. The magnetron mechanism as described in claim 1, characterized in that, The driving device includes a driving part and a connecting member. The driving part is disposed on the top surface of the back plate. The connecting member passes through the back plate, with one end connected to the driving part and the other end connected to the inner magnetic pole. The driving part is used to drive the connecting member to move, thereby driving the inner magnetic pole to move.

5. The magnetron mechanism as described in claim 4, characterized in that, The driving device also includes a guide rail, which is disposed on the top surface of the back plate. The connector is disposed on the top surface of the back plate via the guide rail, and the guide rail is used to guide the connector.

6. The magnetron mechanism as described in claim 4, characterized in that, The drive unit is a stepper motor, a servo motor, or a lead screw motor.

7. The magnetron mechanism as described in claim 1, characterized in that, The first spacing is greater than or equal to 10 millimeters.

8. The magnetron mechanism as described in any one of claims 1 to 7, characterized in that, The distance between the inner magnetic pole and the outer magnetic pole is 30 to 60 millimeters.

9. The magnetron mechanism as described in any one of claims 1 to 7, characterized in that, The inner magnetic poles are disconnected at both ends.

10. The magnetron mechanism as described in claim 1, characterized in that, The outer magnetic pole includes an outer arc portion and an inner arc portion. The outer arc portion is located on the side of the inner magnetic pole closer to the edge of the target surface, and the inner arc portion is located on the side of the inner magnetic pole closer to the center of the target surface. One end of the outer arc portion is connected to the inner arc portion, and the other end is disconnected from the inner arc portion. The outer arc portion and the inner arc portion form the accommodating space.

11. The magnetron mechanism as described in claim 1, characterized in that, The inner magnetic pole is a planar spiral, with one end of the inner magnetic pole close to the center of the target surface and the other end close to the edge of the target surface.

12. A semiconductor processing apparatus, characterized in that, It includes a process chamber and a magnetron mechanism as described in any one of claims 1 to 11, wherein the magnetron mechanism is disposed on the top of the process chamber.

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