Process chamber deposition limitations

Abstract

An example semiconductor processing system can include a chamber body including a sidewall and a base. The system can include a substrate support extending through the base of the chamber body. The chamber body can define a passage extending circumferentially about the substrate support at the base of the chamber body. The system can include one or more isolators disposed within the chamber body. The one or more isolators can define a drain path between the one or more isolators and the chamber body. The drain path can extend to the base of the chamber body. The system can include a fluid source fluidically coupled with the chamber body at the passage extending about the substrate support.

Description

[0001] This application is a divisional application of application number 202180082431.5, filed on October 18, 2021, entitled "Treatment of Chamber Deposition Limitations".

[0002] Cross-reference to related applications

[0003] This application claims the benefit and priority of U.S. nonprovisional application No. 17 / 077,624, filed on October 22, 2020, entitled “PROCESSING CHAMBER DEPOSITION CONFINEMENT”, the contents of which are incorporated herein by reference in their entirety for all purposes. Technical Field

[0004] This technology relates to components and apparatus for semiconductor manufacturing. More specifically, this technology relates to processing chamber components and other semiconductor processing equipment and methods. Background Technology

[0005] Integrated circuits can be fabricated by creating intricately patterned material layers on a substrate surface. Creating patterned material on the substrate requires controlled methods for material formation and removal. Precursors are typically fed into processing areas and distributed to uniformly deposit or etch material onto the substrate. Many aspects of the processing chamber can affect processing uniformity, such as the uniformity of processing conditions within the chamber, the uniformity of flow through components, and other process and component parameters. Even minute differences on the substrate can affect the formation or removal process. Furthermore, components within the chamber can affect deposition on the edges and back sides of chamber components or substrate supports.

[0006] Therefore, there is a need for improved systems and methods that can be used to produce high-quality devices and structures. These and other needs are addressed by this technology. Summary of the Invention

[0007] An exemplary semiconductor processing system may include a chamber body comprising sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define a passage extending circumferentially around the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define a discharge path between the isolators and the chamber body. The discharge path may extend to the base of the chamber body. The system may include a fluid source fluidly coupled to the chamber body at the passage extending around the substrate support.

[0008] In some embodiments, the system may include a pumping liner on which one or more isolators are mounted. The pumping liner may define a plurality of orifices for providing fluid passage to a discharge path. The one or more isolators may include a first isolator located on the pumping liner. A gap may be maintained between the substrate support and the first isolator and on the substrate support surface adjacent to the substrate support. The gap may be maintained at less than 5 mm or about 5 mm. The system may include a liner located on one or more isolators. The liner may form a gas chamber at the base of the chamber body and within the chamber body. The gas chamber may be fluidly isolated from the passage extending around the substrate support at the base of the chamber body. The fluid source may include nitrogen or oxygen.

[0009] Some embodiments of this technology may include a semiconductor processing method. The method may include the steps of: forming a plasma for depositing a precursor in a processing region of a semiconductor processing chamber. The method may include the steps of: flowing a purge gas through a gap defined between a substrate support and an isolator located on a pumping liner within the processing region. The method may include the steps of: depositing material on a substrate located on the substrate support. The method may include the steps of: discharging deposition byproducts and purge gas through the pumping liner.

[0010] In some embodiments, the deposited material may be characterized by nitrogen incorporation of less than 0.5% or about 0.5%. During deposition, a substrate support may extend at least partially over the pumping liner. The semiconductor processing chamber may include a chamber body comprising sidewalls and a base. The substrate support may extend through the base of the chamber body. The chamber body may define a passage extending circumferentially around the substrate support at the base of the chamber body. An isolator may include one or more isolators disposed within the chamber body. The one or more isolators may define a discharge path between the one or more isolators and the chamber body. The discharge path may be fluidly accessed via the pumping liner. The discharge path may extend to the base of the chamber body.

[0011] In some embodiments, the gap may be maintained between the substrate support and a first isolator of the one or more isolators, and near the substrate support surface of the substrate support. The gap may be maintained at less than 5 mm or about 5 mm. A semiconductor processing chamber may be incorporated into a semiconductor processing system, which may include a fluid source fluidly coupled to the chamber body at the passage extending around the substrate support. The fluid source may be nitrogen or oxygen. The semiconductor processing chamber may include a liner located on one or more isolators. The liner may form a gas chamber at the base of the chamber body and within the chamber body. The gas chamber may be fluidly isolated from the passage extending around the substrate support at the base of the chamber body.

[0012] Some embodiments of this technology may include a semiconductor processing system. The system may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define a passage extending circumferentially around the substrate support at the base of the chamber body. The system may include a pumping liner. The pumping liner may be located on the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may include a first isolator located on the pumping liner. The one or more isolators may define a discharge path between the one or more isolators and the chamber body. The discharge path may extend to the base of the chamber body. The system may include a fluid source fluidly coupled to the chamber body at the passage extending around the substrate support. In some embodiments, the system may include a liner located on one or more isolators. The liner may form a gas chamber at the base of the chamber body and within the chamber body. The gas chamber may be fluidly isolated from the passage extending around the substrate support at the base of the chamber body.

[0013] Compared to conventional systems and techniques, this technology offers numerous advantages. For example, embodiments of this technology are limited to deposition on chamber components such as substrate supports or support shafts on the back side. Furthermore, some embodiments of this technology improve cleaning operations within the chamber. These and other embodiments, along with their many advantages and features, are described in more detail below in conjunction with the accompanying drawings. Attached Figure Description

[0014] The nature and advantages of the disclosed technology can be further understood by referring to the remainder of the specification and drawings.

[0015] Figure 1 A top view of an exemplary processing system according to some embodiments of the present technology is shown.

[0016] Figure 2 A schematic cross-sectional view of an exemplary plasma system according to some embodiments of the present technology is shown.

[0017] Figure 3 A schematic partial cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology is shown.

[0018] Figure 4 A schematic partial cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology is shown.

[0019] Figure 5 The operation of an exemplary semiconductor processing method according to some embodiments of the present technology is shown.

[0020] Several figures in the accompanying drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes only and should not be considered to be drawn to scale unless specifically stated otherwise. Furthermore, the drawings are provided to aid understanding and may not include all aspects or information compared to the actual representation, and may include exaggerated material for illustrative purposes.

[0021] In the accompanying drawings, similar parts and / or features may have the same reference numerals. Furthermore, various parts of the same type may be distinguished by adding a letter after the reference numerals to differentiate them. If only the first reference numeral is used in the description, the description applies to any similar parts having the same first reference numeral, regardless of the letter. Detailed Implementation

[0022] Plasma-enhanced deposition processes can excite one or more component precursors to facilitate film formation on a substrate. Any number of material films can be produced to develop semiconductor structures, including conductive and dielectric films, as well as films that facilitate material transport and removal. For example, hard mask films can be formed to facilitate substrate patterning while protecting underlying materials held in other ways. Furthermore, other dielectric materials can be deposited to separate transistors on the substrate or otherwise form semiconductor structures. In numerous processing chambers, numerous precursors can be mixed in a gas panel and transported to processing areas within chambers where the substrate can be placed. While the stacked components may affect the flow distribution into the processing chambers, many other process variables can similarly affect the uniformity of deposition.

[0023] Stacked components can advantageously distribute precursors across the processing area to promote uniform deposition, while structures and operations that ensure more uniform coverage on the substrate can extend deposition to multiple areas around the chamber. For example, deposited precursors and products can flow through an exhaust system coupled at the base of the processing chamber. However, because many of these components can be maintained at temperatures lower or much lower than the substrate being processed, the deposited material can more easily condense or redeposit on the substrate support shaft or the chamber body wall. To address this, conventional techniques may be forced to increase the time available for subsequent chamber cleaning processes after deposition. However, such processes can have several drawbacks. For example, these areas leading into the chamber may be more challenging, potentially requiring increased cleaning time and possibly increasing queue time, thus reducing system throughput. Furthermore, these increased cleaning times may expose other chamber components to prolonged interactions with plasma effluent, which may corrode the chamber or components more quickly.

[0024] This technology overcomes these challenges by creating a gas distribution path through the processing chamber that draws deposition precursors and byproducts to an external area isolated from the processing zone. Furthermore, a purge gas can be used to fill the volume beneath the substrate support, limiting the diffusion of deposited material into this area of ​​the chamber. By blocking deposition diffusion and creating specific emission paths from the chamber, cleaning operations are improved by limiting cleaning performed in the recessed areas, which increases throughput.

[0025] While the remainder of the disclosure will conventionally utilize the disclosed techniques to identify specific deposition processes, it will be readily understood that the system and method are equally applicable to other deposition and cleaning chambers and processes that may occur within said chambers. Therefore, the technique should not be considered limited to use with these specific deposition processes or chambers. Before describing additional variations and modifications to this system according to embodiments of the present technology, this disclosure will discuss a possible system and chamber that may include a cover stack component according to embodiments of the present technology.

[0026] Figure 1A top view of one embodiment of a processing system 100 for deposition, etching, baking, and curing chambers according to an embodiment is shown. In this figure, a pair of front-opening standard chambers 102 supply substrates of various sizes, which are received by robotic arms 104 and placed in a low-pressure holding region 106 before being placed into one of the substrate processing chambers 108a-f located in tandem sections 109a-c. A second robotic arm 110 is used to transport substrate wafers from the holding region 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be assembled to perform a variety of substrate processing operations, including, in addition to plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and other substrate treatments (including annealing, ashing, etc.), the formation of stacks of semiconductor materials as described herein.

[0027] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching dielectric films or other films on the substrate. In one configuration, two pairs of processing chambers (such as 108c-d and 108e-f) may be used to deposit dielectric material on the substrate, and a third pair of processing chambers (such as 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (such as 108a-f) may be configured to deposit alternating dielectric films on the substrate via a stack. Any one or more of the processes described may be performed in chambers separate from the manufacturing systems shown in the different embodiments. It should be understood that system 100 may be considered for additional configurations for the deposition, etching, annealing, and curing chambers for dielectric films.

[0028] Figure 2 A schematic cross-sectional view of an exemplary plasma system 200 according to some embodiments of the present technology is shown. The plasma system 200 may show a pair of processing chambers 108 that can be fitted within one or more of the aforementioned cascading segments 109, and may include a faceplate or other components according to embodiments of the present technology. The plasma system 200 typically includes a chamber body 202 having sidewalls 212, a bottom wall 216, and an inner sidewall 201 defining a pair of processing regions 220A and 220B. Each processing region 220A-220B may be similarly configured and may include the same components.

[0029] For example, processing region 220B (whose components may also be included in processing region 220A) may include a base 228 disposed in the processing region through a channel 222 formed in the bottom wall 216 of the plasma system 200. The base 228 may provide a heater adapted to support a substrate 229 on an exposed surface (such as a body portion) of the base. The base 228 may include a heating element 232 (such as a resistance heating element) capable of heating and controlling the substrate temperature at a desired process temperature. The base 228 may also be heated by a remote heating element (such as a lamp assembly) or any other heating device.

[0030] The body of base 228 is coupled to rod 226 via flange 233. Rod 226 electrically couples base 228 to a power outlet or power supply box 203. Power supply box 203 may include a drive system that controls the raising and lowering of base 228 within processing area 220B. Rod 226 may also include a power interface for supplying power to base 228. Power supply box 203 may also include interfaces for power and temperature indicators, such as thermocouple interfaces. Rod 226 may include a base assembly 238 adapted for detachable coupling with power supply box 203. A circumferential ring 235 is shown above power supply box 203. In some embodiments, circumferential ring 235 may be a shoulder adapted to serve as a mechanical stop or mechanical land, configured to provide a mechanical interface between base assembly 238 and upper surface of power supply box 203.

[0031] The lever 230 may be included through a channel 224 formed in the bottom wall 216 of the processing area 220B and may be used to position a substrate lifting pin 261 passing through the main body of the base 228. The substrate lifting pin 261 may selectively space the substrate 229 from the base to facilitate substrate 229 replacement by a robot that moves the substrate 229 in and out of the processing area 220B through a substrate transfer port 260.

[0032] A chamber cover 204 may be coupled to the top of the chamber body 202. The cover 204 may accommodate one or more precursor distribution systems 208 coupled thereto. The precursor distribution system 208 may include a precursor inlet channel 240 that delivers reactants and cleaning precursors via a gas delivery assembly 218 into a processing area 220B. The gas delivery assembly 218 may include a gasbox 248 having a baffle 244 disposed in the middle of a panel 246. A radio frequency (“RF”) source 265 may be coupled to the gas delivery assembly 218 to power the gas delivery assembly 218 to facilitate the generation of a plasma region between the panel 246 and the base 228 of the gas delivery assembly 218, which may be the processing area of ​​the chamber. In some embodiments, the RF source may be coupled to other parts of the chamber body 202, such as the base 228, to facilitate plasma generation. A dielectric isolator 258 may be disposed between the cover 204 and the gas delivery assembly 218 to prevent RF power from being conducted to the cover 204. A shielding ring 206 may be disposed on the periphery of the base 228, which engages with the base 228.

[0033] Optional cooling channels 247 may be formed in the gas box 248 of the gas distribution system 208 to cool the gas box 248 during operation. A heat transfer fluid (such as water, ethylene glycol, gas, or the like) may circulate through the cooling channels 247, allowing the gas box 248 to be maintained at a predetermined temperature. A liner assembly 227 may be disposed within the processing area 220B immediately adjacent to the sidewalls 201, 212 of the chamber body 202 to prevent the sidewalls 201, 212 from being exposed to the processing environment within the processing area 220B. The liner assembly 227 may include a circumferential pumping chamber 225, which may be coupled to a pumping system 264 configured to discharge gases and byproducts from the processing area 220B and control the pressure within the processing area 220B. A plurality of exhaust ports 231 may be formed on the liner assembly 227. The exhaust port 231 can be configured to allow gas to flow from the processing area 220B to the peripheral pumping chamber 225 in a manner that facilitates processing within the system 200.

[0034] Figure 3 A schematic partial cross-sectional view of an exemplary processing system 300 according to some embodiments of the present technology is shown. Figure 3Further details relating to the components in system 200 may be provided. System 300 is understood to include any features or aspects of system 200 previously discussed in some embodiments. System 300 may be used to perform semiconductor processing operations, including the deposition of hard mask material or other materials as described above, as well as other deposition, removal, or cleaning operations. System 300 may be shown as a partial view of the chamber components discussed and that may be incorporated into a semiconductor processing system, and may also be shown as a view without the aforementioned stacked cover components. Any aspect of system 300 may also be incorporated into other processing chambers or systems readily understood by those skilled in the art.

[0035] System 300 may include a processing chamber containing a panel 305 through which precursors can be conveyed for processing and coupled to a power source for generating plasma within the processing area of ​​the chamber. The chamber may also include a chamber body 310, which, as shown, may include sidewalls and a base. A base or substrate support 315 may extend through the base of the chamber, as previously described. The substrate support may include a support platform 320 that supports a semiconductor substrate 322. The support platform 320 may be coupled to a shaft 325 that extends through the base of the chamber. The shaft 325 may provide pathways for multiple fluid and electrical connections, such as couplings for heaters or chucks.

[0036] As shown, the chamber body 310 may define a passage 330 extending circumferentially around the substrate support, and the passage 330 may be defined by the chamber body and / or one or more additional components within the chamber. A fluid source 335 may be coupled to the passage 330 and may be configured to deliver one or more purification materials through the passage into a volume at least partially defined by the back side of the substrate support platform. Although any inert or rare gas may flow through the passage as described below, in some embodiments, the fluid source may deliver nitrogen and / or oxygen through the passage to facilitate diffusion barrier around the substrate support.

[0037] System 300 may also include additional components that can cooperate to define an exhaust path from the processing chamber. While some conventional techniques allow deposited material to flow around a substrate support to an exhaust location at the bottom of the processing chamber, this technique can form an exhaust path extending around the periphery of the chamber. As shown, in some embodiments, system 300 may include a pumping liner 340 as part of or located on the chamber body, and the pumping liner 340 may extend around the substrate processing chamber. Although shown within the internal depth of the chamber body, in some embodiments, panel 305 may also be located directly on the pumping liner 340. The pumping liner 340 may define a plurality of orifices 342 around the liner, and the plurality of orifices 342 may provide fluid passage through the chamber to the exhaust path. While the exhaust path may be defined externally by the chamber body 310, one or more isolators 345 may be positioned within the processing chamber to define an inner wall of the exhaust path. Thus, an annular exhaust path extending around an external region of the internal volume of the processing chamber can be formed. The exhaust path may be defined between the chamber body and the isolators. The orifice through the pumping liner 340 provides access to the discharge path, and the outlet from the discharge path occurs through the base of the chamber. The pump or discharge system 350 can be fluidly coupled to the discharge path, which allows material to be discharged from the processing chamber.

[0038] As will be further described below, isolator 345 may include one or more annular members defining a discharge path to the base of the chamber. Isolator 345 may be located on a ledge defined on a pumping liner 340 at its inner edge. As shown, a bevel extending to the outer edge of the isolator may be formed, which may be located on the pumping liner. It should be understood that any other edge profile may be formed, including chamfered, grooved, or fillet edge profiles. The edge profile may be adjusted to facilitate material flow from the processing area of ​​the chamber and to limit deposition on components extending outside the processing area. Isolator 345 may be positioned to maintain a gap 355 between the outer edge of the substrate support and the inner edge of the isolator, for example, near the substrate support surface, or along the radial or outer edge of the platform. While the gap can be maintained in any size, in some embodiments, the gap may be maintained less than or about 5.0 mm to limit the diffusion of deposited material behind the substrate support platform, and the gap may be maintained less than or about 4.5 mm, less than or about 4.0 mm, less than or about 3.5 mm, less than or about 3.0 mm, less than or about 2.5 mm, less than or about 2.0 mm, less than or about 1.5 mm, or smaller. However, the gap may be maintained wide enough to limit the turbulence of the purge airflow flowing upward through the chamber to prevent diffusion; therefore, in some embodiments, the gap may be maintained greater than or about 1.0 mm, greater than or about 1.5 mm, greater than or about 2.0 mm, or larger.

[0039] The liner 360 may be coupled to the isolator 345 and may form a gas chamber between the liner and the base of the chamber body. An exhaust system may be fluidly accessed through the gas chamber to remove material from the processing chamber. An additional block or isolator 365 may extend between the base of the chamber body and the liner 360 and may extend about a substrate support axis 325. This ensures that the cleanup path and passage 330 around the substrate support axis remains fluidly isolated from the gas chamber formed between the base of the chamber and the liner. Therefore, the cleanup flow path can be controlled to provide upward flow through the passage 330 in the chamber, flow through the gap 355 to limit deposition diffusion, flow through the orifices 342 in the pumped liner 340, and outflow through the exhaust system 350.

[0040] Figure 4 A schematic partial cross-sectional view of an exemplary processing chamber 400 according to some embodiments of the present technology is shown. The chamber 400 may include any components, features, or characteristics of the system 300 or 200 as described above, as well as additional features that may illustrate the chamber components of the system 300. For example, as described above, a panel 305 may be directly located on a pumping liner 340, which may be located on a chamber body 310, as shown on an additional isolator. As shown, the pumping liner may define an orifice 342 to provide a fluid passage to a defined discharge path between the chamber body 310 and an isolator 345 structure within the chamber. Furthermore, in some embodiments, the isolator 345 may include multiple components that may be joined or coupled to form an isolator structure. For example, a first isolator 405 may be located on an internal lug of the pumping liner 340 and may define a gap between an inner edge of the pumping liner and the outer edge of a substrate support plate 315. A second and third isolator may also be included, which may extend toward the base of the processing chamber. The top inner edge of the first isolator 405 may define a lip or flange as shown to form a choke at any of the aforementioned gap dimensions. A liner 360 may be located on the inner lug formed by the isolator 345 and may define a base of a gas chamber or cavity with a pumping plate as shown, and may also at least partially define a passage 330 that allows purge material to flow into a volume below the substrate support.

[0041] As previously described, some embodiments of this technology can create purification and discharge flow paths that can limit deposition on chamber components outside the processing area defined between the substrate support and the panel. Figure 5The operation of an exemplary semiconductor processing method 500 according to some embodiments of the present technology is illustrated. The method can be carried out in various processing chambers, including the processing systems 200 and 300 described above, which may include any features or components defining the purification and effluent paths as previously described. Method 500 may include a number of optional operations, which may or may not be specifically related to some embodiments of the method according to the present technology. For example, many operations are described to provide a broader range of techniques, but are not critical to the techniques, or may be implemented by easily understood alternative methods.

[0042] Method 500 may include additional operations prior to the commencement of the listed operations. For example, semiconductor processing may be performed prior to initiating method 500. The processing operations may be performed in a chamber or system in which method 500 is performed, or the processing may be performed in one or more other processing chambers in which method 500 is performed prior to delivery of the components to a cleaning system. Once the substrate has been received in the processing chamber (such as including some or all of the components from system 300 described above), method 500 may include the following steps: in operation 505, forming one or more plasmas of deposition precursors in a processing region of the semiconductor processing chamber. The substrate may be positioned on a substrate support (such as support 315 described above), which may include any of the components, features, or characteristics described above. During formation, and including during the deposition operation, in operation 510, a purge gas may flow through a passageway at the base of the chamber. The purge gas may flow through a volume below the substrate support and through a gap defined between the substrate support and an isolator (such as isolator 345, which may include the first isolator 405 as described above) on a pumping liner located within the processing region.

[0043] In operation 515, material can be deposited onto the substrate from plasma effluents of one or more deposition precursors. In operation 520, residual deposited material and byproducts, along with purge gases, flow through orifices in the pump liner into an exhaust path formed between the chamber body and the isolator. These materials can then be discharged from the processing chamber. While conventional techniques may deposit additional material on the back side of the substrate support platform or on the axis of the base, this technique limits the diffusion of deposited material into this volume by utilizing the defined exhaust path and flowing purge gases as explained above.

[0044] As described above, any amount of purge gas can flow through the passages and gaps in the chamber. For example, any rare gas, including helium or argon, hydrogen, nitrogen, oxygen, or any other material, can flow as the purge gas. However, in some embodiments, the purge gas may be, or may include, nitrogen or oxygen, which can limit the formation of parasitic plasma within the processing chamber. Argon can be characterized by a lower ionization potential, which, when it flows through the gap into the capacitively coupled plasma region, may ionize outside the forming deposition plasma and form a plasma discharge, and in some embodiments, this may affect deposition or damage chamber components. Nitrogen and oxygen can be characterized by higher ionization energies, which can limit discharges at the gap regions at the outer edges of the substrate support.

[0045] The flow of purge gas can affect various aspects of deposition. For example, in a non-limiting example, a carbon hard mask can be deposited on a substrate using a process and apparatus according to embodiments of the present technology. In some embodiments, the deposition precursor may be limited to a carbon and hydrogen-containing precursor and / or one or more carrier gases. Although nitrogen may not actively flow as a deposition precursor, trace amounts of nitrogen can be naturally incorporated into the environment-based film. When nitrogen is used as a purge gas, nitrogen within the film can increase at edge regions, which may affect the operational performance of the mask material. To limit the amount of nitrogen incorporated, the flow rate of nitrogen as a purge gas can be limited to less than or about 2000 sccm of nitrogen introduced through a passage in the chamber, and the flow rate can be limited to less than or about 1800 sccm, less than or about 1600 sccm, less than or about 1400 sccm, less than or about 1200 sccm, less than or about 1000 sccm, less than or about 800 sccm, less than or about 600 sccm, or less. However, based on the gap dimensions described above, diffusion into the volume may increase when the purge gas flow rate decreases. Therefore, in some embodiments, the flow rate may be maintained at greater than or about 500 sccm, greater than or about 700 sccm, or greater.

[0046] By controlling the nitrogen flow, the purge gas can be confined to the deposition region, which limits the doping within the film being deposited. Therefore, in some embodiments, at a depth of one micrometer at the substrate edge region, nitrogen doping in the carbon hard mask or other film can be limited to less than or about 0.50%, and can be limited to less than or about 0.45%, less than or about 0.40%, less than or about 0.35%, less than or about 0.30%, less than or about 0.25%, less than or about 0.20%, less than or about 0.15%, less than or about 0.10%, less than or about 0.05%, less than or about 0.03%, or less.

[0047] When oxygen is used as a purge gas, it can also interact with plasma deposition. Again, for a non-limiting example of a carbon hard mask, oxygen flowing into the deposition area can etch partial carbon from the substrate. However, by controlling the flow rate at any of the rates described above, etching can be maintained at the bevels or far-edge regions of the substrate, which can advantageously limit or reduce particle generation or edge stripping caused by deposition in these areas.

[0048] The positioning of the substrate support relative to the pump liner can also affect the diffusion aspects of the ongoing process. In some embodiments, the substrate may be maintained at a height range relative to the pump liner, which may include being in line with the pump liner, above the pump liner, below the pump liner, or at any plane passing through the pump liner. However, this height relationship can affect deposition aspects, which can be accommodated by additional flow rate or gap adjustments. For example, when the substrate support surface of the substrate support is below the height of the pump liner, the upward flow to the pump liner may cause more purge gas to flow to the deposition area, potentially adding additional material to the film. When the substrate support is above the height of the pump liner, the flow can be drawn directly to the discharge path, although deposition may occur on the exposed radial edges of the substrate support platform.

[0049] Once the substrate has been processed, it can be removed from the chamber and a cleaning operation can be performed. During the cleaning operation, the purge gas can be reduced or stopped, which allows the cleaning effluent to enter the volume to remove any diffusion of deposited material that may have occurred. Because the diffusion of deposited material can be limited according to embodiments of the present technology, increased throughput can be provided due to the reduced cleaning time.

[0050] In the foregoing description, numerous details have been set forth for purposes of explanation in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with others.

[0051] Several embodiments have been disclosed, and those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, to avoid unnecessarily obscuring the present technology, many conventional processes and components have not been described. Therefore, the above description should not be considered as limiting the scope of the present technology.

[0052] When providing a numerical range, it should be understood that, unless otherwise expressly indicated in the context, all intermediate values ​​between the upper and lower limits of the range, down to the smallest unit fraction of the lower limit, are specifically disclosed. Any smaller range between any specified numerical values, or any unspecified intermediate value within a specified range, as well as any other specified numerical value or intermediate value within the specified range, are covered. The upper and lower limits of those smaller ranges may be independently included or excluded from the range, and each range (whether or not one or both of the upper and lower limits are included in those smaller ranges) is also covered within this technique, unless any restrictions are specifically excluded from the specified range. When the specified range includes one or both of these restrictions, ranges that exclude one or both of the included restrictions are also included.

[0053] Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” as used in this specification and the appended claims include plural references. Thus, for example, the reference to “orifice” includes a plurality of such orifices, while the reference to “the fluid” includes references to one or more fluids and equivalents conventional to those skilled in the art, etc.

[0054] Furthermore, the words “comprising,” “containing,” “including,” and “comprise”, when used in this specification and the appended claims, are intended to specify the presence of the stated feature, integer, component, or operation, but these terms do not exclude the presence or addition of one or more other features, integers, components, operations, actions, or groups.

Claims

1. A semiconductor processing method, comprising the following steps: Plasma is formed in the processing region of the semiconductor processing chamber to deposit precursors; Purified gas is allowed to flow through a gap defined between a substrate support and an isolator located on a pumping liner within the processing area. Depositing material on a substrate located on the substrate support; and Deposited byproducts and purified gas are discharged through the pump liner.

2. The semiconductor processing method of claim 1, wherein the deposited material is characterized by nitrogen doping of less than or about 0.5%.

3. The semiconductor processing method of claim 1, wherein during the deposition, the substrate support extends at least partially over the pumping liner.

4. The semiconductor processing method of claim 1, wherein the semiconductor processing chamber comprises: The chamber body includes sidewalls and a base, wherein The substrate support extends through the base of the chamber body. The chamber body defines a passage that extends circumferentially around the substrate support at the base of the chamber body. The isolator includes one or more isolators disposed within the chamber body. The one or more isolators define a discharge path between the one or more isolators and the chamber body, wherein the discharge path is fluidly connected via the pumped liner, and The discharge path extends to the base of the chamber body.

5. The semiconductor processing method of claim 4, wherein the gap is maintained between the substrate support and a first isolator of the one or more isolators and on a substrate support surface near the substrate support.

6. The semiconductor processing method of claim 5, wherein the gap is maintained at less than 5 mm or about 5 mm.

7. The semiconductor processing method of claim 4, wherein the semiconductor processing chamber is incorporated into a semiconductor processing system, the semiconductor processing system further comprising: A fluid source is fluidly coupled to the chamber body at the passage extending around the substrate support.

8. The semiconductor processing method of claim 7, wherein the fluid source is nitrogen or oxygen.

9. The semiconductor processing method of claim 4, wherein the semiconductor processing chamber further comprises: A liner, located on the one or more isolators, wherein the liner is located at the base of the chamber body and forms an air chamber within the chamber body.

10. The semiconductor processing method of claim 9, wherein the gas chamber is fluidly isolated from the passage extending around the substrate support at the base of the chamber body.

11. The semiconductor processing method of claim 4, wherein the pumping liner defines a plurality of orifices that provide fluid passages to the discharge path.

12. The semiconductor processing method of claim 1, wherein the purifying gas comprises a rare gas, hydrogen, nitrogen, oxygen, or a combination of these gases.

13. The semiconductor processing method of claim 1, wherein the deposition precursor comprises carbon, hydrogen, or a combination thereof.

14. The semiconductor processing method of claim 1, wherein the purifying gas comprises nitrogen, and wherein the nitrogen flows at a flow rate of less than or about 2000 sccm.

15. The semiconductor processing method of claim 1, wherein the purifying gas comprises oxygen, and wherein the oxygen flows at a flow rate of less than or about 2000 sccm.

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