A misted chemical vapor deposition reaction apparatus and process

Abstract

The application discloses an atomized chemical vapor deposition reaction device and process, which comprises a uniform atomization device, a deposition chamber, a gas floating rotating device and a sampling device, further comprises a gas collection and liquid accumulation device and a graphite carrier stage lifting device, the gas collection and liquid accumulation device is located between the deposition chamber and the graphite carrier stage lifting device, and further comprises a glove box which is communicated with the side wall of the deposition chamber through a sampling channel; the gas collection and liquid accumulation device is adopted to solve the problem that the deposition chamber negative pressure is unstable due to the pipeline blockage caused by the condensation and liquefaction of the precursor, the sampling channel is arranged on the side wall of the deposition chamber, and the glove box is arranged to solve the problem that the precursor mixed gas is diffused to pollute the environment during the sampling process, so that the deposition reaction process environment in the deposition chamber is ensured to be constant, and the production efficiency and product quality of industrial production are greatly improved.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition (CVD) technology, and more particularly to an atomized CVD apparatus and process. Background Technology

[0002] Mist-CVD is a technique that uses ultrasonic atomization of a precursor solution to mix micron-sized droplets with a carrier gas and deliver them to a heated substrate, where a high-temperature chemical reaction forms a thin film. Compared to traditional CVD, it features lower equipment costs, no need for a vacuum environment, and faster deposition rates. Its flexible precursor selection makes it more suitable for industrial production, and it is therefore used in the epitaxial production of semiconductor heteroepitaxial materials such as gallium oxide (Ga2O3) and zinc oxide (ZnO) thin films. It is also being explored for applications in HEMT device manufacturing and is expected to play a greater role in more fields requiring high-quality thin films in the future.

[0003] Patent document CN202279856U discloses a chemical vapor deposition (CVD) apparatus with a double-corrugated pipe structure, including a reactive gas inlet component, a reaction chamber, an upper cover component, a gate valve, a fixed base plate, an upper and lower lifting plate drive component, upper and lower corrugated pipes, a wafer tray, a quartz cover, and a heater. The gas inlet component is driven and controlled to move up and down via the upper lifting plate; the heater is driven and controlled to move up and down via the lower lifting plate; the wafer tray is driven and controlled to move up and down via the lower lifting plate; during the up and down movement of the upper and lower lifting plates, the upper and lower corrugated pipes respectively ensure the sealing of the reactive gas; a gate valve is provided on the upper cover support for an external robotic arm to load and unload wafers. Its advantages include the ability of the reactive gas inlet component, heater, and wafer tray to move up and down, which allows for height adjustment of the reaction chamber in the CVD process and provides convenience for equipment maintenance and disassembly. The gate valve on the upper cover support also provides a window for an external robotic arm to automatically load and unload wafers. The CVD apparatus provided by this patent document has a high degree of automation, good sealing of the reaction chamber, and can effectively prevent gas escape, reducing losses. However, since the precursor enters the reaction chamber as a mist of droplets, any mist that doesn't fully participate in the deposition process is carried away by the downstream exhaust gas recovery system. These droplets easily accumulate in the pipes, narrowing the space and even completely blocking them. This leads to unstable negative pressure provided by the exhaust gas recovery system, and the liquid contaminates components of the exhaust gas system, affecting process results and damaging equipment. During prolonged continuous production, this can cause pipe blockages. Such malfunctions are not only easy to occur but also difficult to locate quickly, requiring frequent cleaning of the exhaust gas recovery system's pipes throughout the production process to ensure its proper functioning. This not only results in cumbersome and time-consuming operation and high equipment maintenance costs, but also low production efficiency and difficulty in guaranteeing product quality, especially for the mass production of high-precision products. Summary of the Invention

[0004] To address the problems in related technologies, this invention discloses an atomized chemical vapor deposition reactor. It employs a gas-liquid collection device to separate the residual tail gas after the reaction before discharging it. This solves the problem of unstable negative pressure in the deposition chamber caused by precursor condensate clogging the pipeline. Through reasonable layout, simplified design, and the rational setting of work zones and glove boxes, it addresses the issues of gas escape during wafer removal leading to workshop environmental pollution, difficult equipment operation and maintenance, and increased production costs, significantly improving the production efficiency and product quality of industrial production.

[0005] To achieve the above objectives, the present invention provides the following technical solution: an atomizing chemical vapor deposition reaction device, comprising a mist equalization device, a deposition chamber, an air flotation rotation device, and a sampling device, characterized in that: it further comprises a gas collection and liquid accumulation device and a graphite stage lifting device, wherein the gas collection and liquid accumulation device is located between the deposition chamber and the graphite stage lifting device.

[0006] By adopting the above technical solution, the residual mixed gas after the deposition reaction enters the gas collection and liquid accumulation device for gas-liquid separation. The liquid is collected in the gas collection and liquid accumulation device, and the remaining dry gas is extracted by the downstream waste gas recovery system. This avoids the residual precursor from condensing and liquefying in the pipeline of the waste gas recovery system, which would cause pipeline blockage and affect the normal operation of the waste gas recovery system, thus ensuring a stable environment for the entire atomized chemical vapor deposition reaction process.

[0007] As a further embodiment of the present invention, the gas and liquid collection device is made of quartz material and is detachably fixed on the graphite platform lifting device. This structure, with the help of the transparent quartz material, eliminates the need for a special high liquid level detection alarm device, allowing direct observation of the liquid volume inside the gas and liquid collection device, and timely removal for cleaning.

[0008] As a further aspect of the present invention, the gas-collecting and liquid-accumulating device includes a gas-collecting and liquid-accumulating shell and a gas-collecting and liquid-accumulating box. The gas-collecting and liquid-accumulating box is detachably installed inside the gas-collecting and liquid-accumulating shell. An air inlet is provided at the top of the gas-collecting and liquid-accumulating box, and a tail gas outlet is provided on the upper outer side of the gas-collecting and liquid-accumulating box. The gas-collecting and liquid-accumulating shell is provided with a positioning groove. When the tail gas outlet is located in the positioning groove, the air inlet and the exhaust gas outlet are vertically connected. When the tail gas outlet is connected to the exhaust gas recovery system at the rear end, the exhaust gas recovery system continuously draws negative pressure to this structure through the tail gas outlet, guiding the high-temperature and humid exhaust gas in the deposition chamber into the gas-collecting and liquid-accumulating box through the air inlet. After condensation and gas-liquid separation in the gas-collecting and liquid-accumulating box, the dry gas enters the exhaust gas recovery system at the rear end through the tail gas outlet. When there is a large amount of liquid, the connection with the exhaust gas recovery system is disconnected, and the gas-collecting and liquid-accumulating box is removed from the gas-collecting and liquid-accumulating shell, so that the liquid can be discharged from the tail gas outlet.

[0009] As a further aspect of the invention, the gas and liquid collection box is equipped with a vertically downward partition wall that divides the gas and liquid collection box into an inner gas collection chamber and an outer gas collection chamber. The bottoms of the inner and outer gas collection chambers are connected, and the air inlet is located in the inner gas collection chamber. This structure, using a partition wall, ensures that the hot and humid mixed gas, after entering the inner gas collection chamber through the air inlet, must first descend through the bottom before entering the outer gas collection chamber, and finally exit through the exhaust outlet. This extends the flow path of the mixed gas, and the collision between the mixed gas and the partition wall during the flow increases the condensation rate, accelerates gas-liquid separation, and improves condensation efficiency.

[0010] As a further embodiment of the present invention, there are two gas and liquid collection boxes, which are symmetrically placed inside the gas and liquid collection shell. This structure can fully utilize the space of the gas and liquid collection shell and the gas and liquid collection box while realizing the fitting of the gas and liquid collection device onto the support tube. Moreover, the structure is simple in design and easy to operate.

[0011] As a further embodiment of the present invention, the graphite stage lifting device includes a support tube, a first lifting plate, a second lifting plate, and a corrugated pipe. The bottom of the support tube is disposed on the second lifting plate, and the top of the support tube passes through the first lifting plate and the gas and liquid collection device to reach the deposition chamber. The air flotation rotating device is located at the top of the support tube, and the gas and liquid collection device is disposed on the first lifting plate. The air flotation rotating device is made of graphite and includes a stage and a base. The stage is located on the base and can rotate around an axis.

[0012] As a further embodiment of the present invention, the glove box and the deposition chamber are connected through a sampling channel. The sampling device includes a glove box, which is equipped with a sample-taking robot and a gate valve. The gate valve is located in the sampling channel.

[0013] As a further aspect of the present invention, an atomized chemical vapor deposition reaction process is also included, comprising the following steps: Step S1, Substrate Placement: Under normal pressure, the air-floating rotating device is vertically moved to the sampling area by the graphite stage lifting device, and the substrate is placed in the deposition chamber by the sampling device. Step S2: Prepare for deposition reaction: Inert gas is introduced into the mist equalization device, and the negative pressure is used to evacuate the gas so that the deposition chamber is within the set negative pressure range. The temperature inside the deposition chamber is heated and controlled to the set deposition reaction temperature value. Step S3, Deposition reaction: The air-floating rotating device is vertically moved to the deposition reaction area by the graphite stage lifting device and the air-floating rotating device is rotated at a uniform speed. The precursor atomizing gas is input into the mist equalization device. After the precursor atomizing gas and the inert gas are uniformly mixed in the mist equalization device, they flow into the deposition chamber and carry out chemical vapor deposition reaction on the substrate surface. Step S4: Determine whether the deposition reaction is complete: Monitor and maintain various process parameters (such as temperature, precursor volume, gas pressure, reaction time, etc.) during the deposition reaction in real time to determine whether the deposition reaction is complete. If yes, proceed to step S5; otherwise, proceed to step S3. Step S5, Exiting the deposition reaction: Stop feeding the precursor atomizing gas into the mist equalizer, stop heating, stop the air flotation rotating device from rotating at a constant speed, turn off the negative pressure pump, and continue to feed inert gas until the gas pressure in the deposition chamber returns to normal. Step S6: Determine if the liquid level is high: Visually observe whether the liquid level in the gas collection and liquid collection device is high. If yes, proceed to step S7; otherwise, proceed to step S8. Step S7: Clean up the accumulated liquid: Clean up the accumulated liquid in the gas collection and liquid collection device; Step S8: Remove the substrate: Under normal pressure, the air-floating rotating device is vertically moved to the sampling area by the graphite stage lifting device, and the substrate is removed from the deposition chamber by the sampling device.

[0014] As a further aspect of the present invention, process step S7 includes the following steps: Step S7-1: The gas collection and liquid accumulation device is separated from the deposition chamber by vertically moving the graphite stage lifting device. Step S7-2: Remove the gas and liquid collection device from the graphite stage lifting device, clean the liquid inside the gas and liquid collection device, and then put the gas and liquid collection device back on the graphite stage lifting device. Step S7-3: The gas collection and liquid accumulation device is tightly connected to the deposition chamber by vertically moving the graphite stage lifting device.

[0015] In summary, compared with the prior art, the beneficial effects of the present invention are as follows: 1. The gas and liquid collection device is detachable, which can conveniently and quickly separate the residual waste gas after the deposition reaction before discharge, eliminating pipeline blockage and ensuring that the waste gas recovery system provides a continuous and stable negative pressure to the deposition chamber. This ensures stable flow of mixed gas throughout the process. The overall structure is simple and easy to implement, and operation and maintenance are convenient. It improves equipment performance and makes the process simple and efficient.

[0016] 2. A graphite platform lifting device is used to control the movement path and position of the air flotation rotating device and the gas collecting and liquid accumulating device, and to provide a constant air pressure to the bellows. The pressure difference between the gas in the bellows and the gas in the deposition chamber prevents the gas in the deposition chamber from escaping through the gaps on the outer wall of the support tube. While realizing the vertical movement of the air flotation rotating device and the gas collecting and liquid accumulating device, it helps to reduce the escape of inert gas in the deposition chamber, reduce production costs, reduce the manufacturing and processing precision requirements of the structure, and is simple to manufacture and easy to operate, which is conducive to continuous industrial production.

[0017] 3. By placing the RF heating induction coil outside the deposition chamber and using an air-floating rotation device, the device structure is simplified, and the density of the dynamically averaged atomized gas flow deposited on the substrate is improved. The deposition reaction area can be flexibly adjusted by the graphite stage lifting device. By setting the upper part of the deposition chamber as the atomized chemical vapor deposition reaction area, the bottom as the operation area, and the exhaust outlet within the coverage area of ​​the air-floating rotation device, along with the glove box and robotic arm, the overall structure is simple, efficient, and conducive to energy saving and consumption reduction.

[0018] 4. The vertical and coaxially symmetrical setup facilitates the sequential execution of the reaction gas flow through processes such as uniform gas distribution, vapor deposition reaction, substrate removal and replacement, and liquid accumulation cleaning. This not only makes the process easier to implement but also ensures high efficiency and stability, significantly improving equipment operational stability, reducing equipment maintenance, and enhancing process precision and batch quality.

[0019] 5. The sedimentation chamber and gas collection and liquid accumulation device are made of quartz material, while the air flotation rotation device is made of graphite material. This makes the manufacturing process convenient and provides good thermal insulation. The transparent quartz material also helps to observe the internal process conditions without the need for additional monitoring components, facilitating continuous industrial production. Attached Figure Description

[0020] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the embodiments of the invention to explain the invention and do not constitute a limitation thereof.

[0021] In the attached diagram: Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a partial cross-sectional structural diagram of the present invention; Figure 3 This is a partial cross-sectional structural diagram of the gas collecting and liquid accumulating device of the present invention; Figure 4 This is a partial cross-sectional structural schematic diagram of the air-float rotation device and the graphite platform lifting device of the present invention. Figure 5 This is a partial cross-sectional structural diagram of the present invention in another working state; Figure 6 This is a schematic diagram of the gas and liquid collection device in the second embodiment of the present invention; Figure 7 This is a partial cross-sectional view of the gas collection and liquid accumulation box in the second embodiment of the present invention; Figure 8 This is a schematic diagram of the overall structure of the third embodiment of the present invention.

[0022] Figure label annotations: 1. Misting device; 2. Deposition chamber; 21. Exhaust gas outlet; 22. Sampling channel; 3. Gas and liquid collection device; 31. Gas and liquid collection box; 32. Gas and liquid collection shell; 33. Air inlet; 34. Isolation wall; 35. Exhaust outlet; 36. Positioning groove; 37. Inner chamber of gas collection; 38. Outer chamber of gas collection; 39. Liquid discharge outlet; 4. Graphite platform lifting device; 41. First lifting plate; 42. Second lifting plate; 43. Corrugated pipe; 44. Air inlet; 5. Air flotation rotating device; 51. Platform; 52. Base; 53. Air flotation flow channel; 54. Air flotation orifice; 55. Base; 6. RF heating induction coil; 7. Support tube; 71. Air float inlet; 8. Thermocouple; 9. Sampling device; 91. Sampling robot; 92. Valve; 93. Glove box. Detailed Implementation

[0023] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with some aspects disclosed in this embodiment as detailed in the appended claims.

[0024] It should be noted that all directional indicators in the embodiments (such as up, down, left, right, front, back, etc.) are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0025] Furthermore, descriptions using terms such as "first" and "second" in the embodiments are for descriptive purposes only and do not specifically refer to any order or sequence, nor are they intended to limit the invention. They are merely used to distinguish components or operations described using the same technical terms and should not be construed as indicating or implying their relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of the various embodiments can be combined with each other, but only if they are feasible for those skilled in the art. If a combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination does not exist and is not within the scope of protection claimed by this invention.

[0026] To further understand the content, features, and effects of this invention, the following embodiments are provided, and detailed descriptions are given below in conjunction with the accompanying drawings: Example 1 like Figure 1 As shown, this embodiment provides an atomizing chemical vapor deposition reactor, including a vertically erected and axially symmetrically arranged mist equalization device 1, a deposition chamber 2, a gas collection and liquid accumulation device 3, a graphite stage lifting device 4, and a sampling device 9. RF heating induction coils 6 are arranged around the side walls of the deposition chamber 2. The exhaust gas outlet 21 at the bottom of the deposition chamber 2 is connected to the air inlet 33 at the top of the gas collection and liquid accumulation device 3. The gas collection and liquid accumulation device 3 is detachably fixed to the graphite stage lifting device 4. The graphite stage lifting device 4 is provided with a hollow support tube 7. The top of the support tube 7 is connected to the bottom of the air flotation rotating device 5 inside the deposition chamber 2. The graphite stage lifting device 4 can drive the air flotation rotating device 5 to move vertically up and down inside the deposition chamber 2. The sampling device 9 includes a glove box 93, which is connected to the side wall of the deposition chamber 2 through a sampling channel 22.

[0027] like Figure 1 , Figure 2 , Figure 4 As shown, the graphite stage lifting device 4 includes a first lifting plate 41, a second lifting plate 42, and a corrugated pipe 43. The bottom of the support pipe 7 is set on the second lifting plate 42 and the top passes through the first lifting plate 41. The first lifting plate 41, the second lifting plate 42, and the corrugated pipe 43 surround the lower end of the support pipe 7 in a sealed space. The gas collecting and liquid accumulating device 3 is located on the first lifting plate 41. The first lifting plate 41 can drive the gas collecting and liquid accumulating device 3 to move vertically up and down. The second lifting plate 42 can drive the support pipe 7 to move vertically up and down. The second lifting plate is also provided with an air inlet 44, which is connected to the inside of the corrugated pipe 43.

[0028] The graphite stage lifting device 4 drives the first lifting plate 41 to move vertically up and down, so that the gas collecting and liquid accumulating device 3 can be in a state of being detached from the upper deposition chamber 2 or in a state of being tightly connected. During the atomized chemical vapor deposition reaction, the gas collecting and liquid accumulating device 3 is in a state of being tightly connected to the upper deposition chamber 2. When it is in the detached state, the condensate collected in the gas collecting and liquid accumulating device 3 can be cleaned. The two states are easy to switch and easy to operate. By driving the second lifting plate 42 to move vertically up and down, the support pipe 7 can be driven to move vertically up and down. The support pipe 7 can drive the air flotation rotating device 5 in the deposition chamber 2 to move vertically up and down. This structure inputs inert gas, such as nitrogen, from the air inlet 44 into the closed space enclosed by the first lifting plate 41, the second lifting plate 42, and the corrugated pipe 43. This ensures that the pressure of the inert gas inside the corrugated pipe 43 remains constant when the shape of the corrugated pipe 43 changes. Excess inert gas can rise along the outer wall of the support pipe 7, pass through the gas collection and liquid accumulation device 3, and enter the bottom of the deposition chamber 2. Subsequently, it is treated by the waste gas recovery system at the back end together with the waste gas after the deposition reaction. This avoids the problem that the precursor mixed gas in the deposition chamber 2 will escape along the outer wall of the support pipe 7 and enter the corrugated pipe 43 due to the movement of the support pipe 7.

[0029] like Figure 2 , Figure 3 As shown, the gas and liquid collection device 3 is made of quartz material and includes a gas and liquid collection shell 32 and a gas and liquid collection box 31. The gas and liquid collection box 31 and the gas and liquid collection shell 32 cooperate to fit the support tube 7 into the axial position. The gas and liquid collection box 31 is detachably installed inside the gas and liquid collection shell 32. An air inlet 33 is provided on the top of the gas and liquid collection box 31. An exhaust outlet 35 is provided on the upper outer side of the gas and liquid collection box 31. The gas and liquid collection shell 32 is provided with a positioning groove 36. When the exhaust outlet 35 is located in the positioning groove 36, the air inlet 33 is connected vertically to the exhaust outlet 21.

[0030] The gas collection and liquid accumulation box 31 is provided with a vertical isolation wall 34 from top to bottom. The isolation wall 34 divides the gas collection and liquid accumulation box 31 into an inner gas collection chamber 37 and an outer gas collection chamber 38. The bottoms of the inner gas collection chamber 37 and the outer gas collection chamber 38 are connected, and the air inlet 33 is located in the inner gas collection chamber 37.

[0031] like Figure 1 As shown, the glove box 93 is also equipped with a wafer-retrieving robot 91 and a gate valve 92. The gate valve 92 is located at the outlet of the sampling channel 22. The wafer-retrieving robot 91 can retrieve the substrate in the deposition chamber 2 through the gate valve 92 and the sampling channel 22.

[0032] The RF heating induction coil 6 is located in the upper part of the deposition chamber 2, and the sampling channel 22 is located in the lower part of the side wall of the deposition chamber 2. The deposition chamber 2 is made of quartz.

[0033] like Figure 4 As shown, the air flotation rotating device 5 is made of graphite. A thermocouple 8 is provided at the bottom of the air flotation rotating device 5. The thermocouple 8 is located inside the support tube 7. An air flotation inlet 71 is provided at the bottom of the support tube 7.

[0034] like Figure 4 As shown, the air flotation rotation device 5 includes a platform 51 and a base 52. The upper surface of the base 52 is provided with air flotation channels 53 symmetrically distributed around the axis. The air flotation channels 53 are shallow grooves in the shape of vortex lines extending outward from the axis. The air flotation channels 53 are provided with air flotation holes 54 near the axis. The air flotation holes 54 are connected to the inside of the support tube 7. The platform 51 is located on the base 52 and can rotate around the axis. The upper surface of the platform 51 is provided with a concave base 55 at the axis.

[0035] like Figure 5As shown, when the air flotation rotating device 5 descends to the bottom of the deposition chamber 2 and covers the exhaust gas outlet 21, it helps to trap the inert gas inside the deposition chamber 2. Opening the door valve 92 allows the substrate on the replacement stage 51 to be picked up and replaced by the wafer-picking robot 91; it also facilitates the vertical descent of the first lifting plate 41, disengaging the gas and liquid collection device 3 from the deposition chamber 2, thus completing the cleaning operation of the liquid in the gas and liquid collection box 31. This structure helps reduce the consumption of inert gas during substrate replacement and condensate cleaning operations, thereby reducing production costs.

[0036] Meanwhile, by placing the exhaust outlet 35 in the positioning groove 36, the positioning of the gas collection and liquid accumulation box 31 and the gas collection and liquid accumulation shell 32 can be easily completed, thereby ensuring the accurate positioning of the exhaust outlet 21 and the air inlet 33 at the bottom of the sedimentation chamber 2; and the sedimentation chamber 2 and the gas collection and liquid accumulation device 4 are both made of quartz material, which is not only conducive to condensation and heat preservation, but its transparent characteristics also allow production personnel to directly observe the internal conditions of the sedimentation chamber 2 and the liquid volume status in the gas collection and liquid accumulation box 31.

[0037] This embodiment also provides an atomized chemical vapor deposition process for product deposition using the atomized chemical vapor deposition apparatus provided in Embodiment 1, comprising the following steps: Step S1, Substrate Placement: Under normal pressure, the air-floating rotating device 5 is vertically moved to the sampling area by the graphite stage lifting device 4, and the substrate is placed in the deposition chamber 2 by the sampling device 9. Step S2: Prepare for deposition reaction: Inert gas is introduced into the mist equalization device 1, and negative pressure is used to evacuate the gas so that the deposition chamber 2 is within the set negative pressure range. The temperature inside the deposition chamber 2 is heated and controlled to the set deposition reaction temperature value. Step S3, Deposition reaction: The air-floating rotating device 5 is vertically moved to the deposition reaction area by the graphite stage lifting device 4 and the air-floating rotating device 5 is rotated at a uniform speed. The precursor atomizing gas is input into the mist equalization device 1. The precursor atomizing gas and the inert gas are uniformly mixed in the mist equalization device 1 and then flow into the deposition chamber 2, and chemical vapor deposition reaction is carried out on the substrate surface. Step S4: Determine whether the deposition reaction is complete: Monitor and maintain various process parameters (such as temperature, precursor volume, gas pressure, reaction time, etc.) during the deposition reaction in real time to determine whether the deposition reaction is complete. If yes, proceed to step S5; otherwise, proceed to step S3. Step S5, Exiting the deposition reaction: Stop inputting precursor atomizing gas into the uniform mist device 1, stop heating, stop the uniform rotation of the air flotation rotating device 5, turn off the negative pressure pump, and continue to input inert gas until the gas pressure in the deposition chamber 2 returns to normal pressure. Step S6: Determine if the liquid level is high: Visually observe whether the liquid level in the gas collection and liquid collection device 3 is high. If yes, proceed to step S7; otherwise, proceed to step S8. Step S7: Clean up the accumulated liquid: Clean up the accumulated liquid in the gas collection and liquid collection device; Step S7-1: The gas collecting and liquid accumulating device 3 is disengaged from the deposition chamber 2 by vertically moving the graphite stage lifting device 4. Step S7-2: Remove the gas and liquid collection device 3 from the graphite stage lifting device 4, clean the liquid inside the gas and liquid collection device 3, and then put the gas and liquid collection device 3 back onto the graphite stage lifting device 4. Step S7-3: The gas collection and liquid accumulation device 3 is tightly connected to the deposition chamber 2 by vertically moving the graphite stage lifting device 4. Step S8: Remove the substrate: Under normal pressure, the air-floating rotating device 5 is vertically moved to the sampling area by the graphite stage lifting device 4, and the substrate is removed from the deposition chamber 2 by the sampling device 9.

[0038] Example 2 like Figure 1 As shown, this embodiment provides an atomizing chemical vapor deposition reactor, including a vertically erected and axially symmetrically arranged mist equalization device 1, a deposition chamber 2, a gas collection and liquid accumulation device 3, and a graphite stage lifting device 4. RF heating induction coils 6 are arranged around the side walls of the deposition chamber 2. The exhaust gas outlet 21 at the bottom of the deposition chamber 2 is connected to the air inlet 33 at the top of the gas collection and liquid accumulation device 3. The gas collection and liquid accumulation device 3 is detachably fixed to the graphite stage lifting device 4. The graphite stage lifting device 4 is provided with a hollow support tube 7. The top of the support tube 7 is connected to the bottom of the air flotation rotating device 5 inside the deposition chamber 2. The graphite stage lifting device 4 can drive the air flotation rotating device 5 to move vertically up and down inside the deposition chamber 2. It also includes a glove box 93, which is connected to the side wall of the deposition chamber 2 through a sampling channel 22.

[0039] like Figure 1 , Figure 2 , Figure 4 As shown, the graphite stage lifting device 4 includes a first lifting plate 41, a second lifting plate 42, and a corrugated pipe 43. The bottom of the support pipe 7 is set on the second lifting plate 42 and the top passes through the first lifting plate 41. The first lifting plate 41, the second lifting plate 42, and the corrugated pipe 43 surround the lower end of the support pipe 7 in a sealed space. The gas collecting and liquid accumulating device 3 is located on the first lifting plate 41. The first lifting plate 41 can drive the gas collecting and liquid accumulating device 3 to move vertically up and down. The second lifting plate 42 can drive the support pipe 7 to move vertically up and down. The second lifting plate is also provided with an air inlet 44, which is connected to the inside of the corrugated pipe 43.

[0040] like Figure 1 As shown, the glove box 93 is also equipped with a wafer-retrieving robot 91 and a gate valve 92. The gate valve 92 is located at the outlet of the sampling channel 22. The wafer-retrieving robot 91 can retrieve the substrate in the deposition chamber 2 through the gate valve 92 and the sampling channel 22.

[0041] The RF heating induction coil 6 is located in the upper part of the deposition chamber 2, and the sampling channel 22 is located in the lower part of the side wall of the deposition chamber 2. The deposition chamber 2 is made of quartz.

[0042] like Figure 4 As shown, the air flotation rotating device 5 is made of graphite. A thermocouple 8 is provided at the bottom of the air flotation rotating device 5. The thermocouple 8 is located inside the support tube 7. An air flotation inlet 71 is provided at the bottom of the support tube 7.

[0043] The air flotation rotation device 5 includes a platform 51 and a base 52. The upper surface of the base 52 is provided with air flotation channels 53 symmetrically distributed along the same axis. The air flotation channels 53 are shallow grooves in the shape of vortex lines extending outward from the axis. The air flotation channels 53 are provided with air flotation holes 54 near the axis. The air flotation holes 54 are connected to the inside of the support tube 7. The platform 51 is located on the base 52 and can rotate around the axis. The upper surface of the platform 51 is provided with a concave base 55 at the axis.

[0044] like Figure 2 , Figure 6 , Figure 7 As shown, the gas and liquid collection device 3 is made of quartz material and includes a gas and liquid collection shell 32 and a gas and liquid collection box 31. The gas and liquid collection box 31 is detachably installed inside the gas and liquid collection shell 32. An air inlet 33 is provided on the top of the gas and liquid collection box 31, and an exhaust outlet 35 is provided on the upper outer side of the gas and liquid collection box 31. The gas and liquid collection shell 32 is provided with a positioning groove 36. When the exhaust outlet 35 is located in the positioning groove 36, the air inlet 33 is connected vertically to the exhaust outlet 21.

[0045] There are two semi-circular gas and liquid collection boxes 31, which are symmetrically placed inside the gas and liquid collection shell 32, and the support tube 7 is fitted at the axis. The gas and liquid collection box 31 is provided with a vertical isolation wall 34 from the top down. The isolation wall 34 divides the gas and liquid collection box 31 into an inner gas collection chamber 37 and an outer gas collection chamber 38. The bottoms of the inner gas collection chamber 37 and the outer gas collection chamber 38 are connected, and the air inlet 33 is located in the inner gas collection chamber 37.

[0046] like Figure 5 As shown, when the air flotation rotating device 5 descends to the bottom of the deposition chamber 2, the exhaust gas outlet 21 is covered by the air flotation rotating device 5. At this time, the mixed gas in the deposition chamber is blocked within the deposition chamber 2 and cannot enter the gas collection and liquid accumulation box 31. When it is necessary to remove and replace the substrate, the door valve 92 can be opened, and the substrate on the replacement stage 51 can be removed by the wafer picking robot 91; when it is necessary to clean the liquid in the gas collection and liquid accumulation box, the first lifting plate 41 can be driven to descend vertically, so that the gas collection and liquid accumulation device 3 is separated from the deposition chamber 2, thereby completing the cleaning operation of the liquid in the gas collection and liquid accumulation box 31; this structure reduces the consumption of inert gas and reduces pollution to the workshop environment when performing the operations of removing and replacing the substrate and cleaning the condensate.

[0047] Meanwhile, by placing the exhaust outlet 35 in the positioning groove 36, the positioning of the gas collection and liquid accumulation box 31 and the gas collection and liquid accumulation shell 32 can be easily completed, thereby ensuring the accurate positioning of the exhaust outlet 21 and the air inlet 33 at the bottom of the sedimentation chamber 2; and the sedimentation chamber 2 and the gas collection and liquid accumulation device 4 are both made of quartz material, which is not only beneficial for heating and heat preservation, but its transparent characteristics also allow production personnel to directly observe the internal conditions of the sedimentation chamber 2 and the liquid volume status in the gas collection and liquid accumulation box 31.

[0048] Example 3 like Figure 8 As shown, an atomized chemical vapor deposition (CVD) apparatus includes a mist equalization device 1, a deposition chamber 2, an air flotation rotating device 5, and a sampling device 9. It also includes a gas and liquid collection device 3 and a graphite stage lifting device 4. The gas and liquid collection device 3 is located between the deposition chamber 2 and the graphite stage lifting device 4. The top of the gas and liquid collection device 3 has an air inlet 33, and the upper outer side has a tail gas outlet 35 and a liquid outlet 39. After the precursor atomized mixed gas enters the deposition chamber 2 for reaction, the tail gas enters the gas and liquid collection device 3 for gas-liquid separation. The dried gas after gas-liquid separation is discharged through the tail gas outlet 35, and the liquid collected by the gas and liquid collection device 3 is discharged through the liquid outlet 39.

[0049] Example 4 This embodiment provides an atomized chemical vapor deposition (CVD) process using an atomized chemical vapor deposition apparatus provided in Embodiment 1 or Embodiment 2 to perform a deposition reaction, comprising the following steps: Step S1, Substrate Placement: Under normal pressure, the air-floating rotating device 5 is vertically moved to the sampling area by the graphite stage lifting device 4, and the substrate is placed in the deposition chamber 2 by the sampling device 9. Step S2: Prepare for deposition reaction: Inert gas is introduced into the mist equalization device 1, and negative pressure is used to evacuate the gas so that the deposition chamber 2 is within the set negative pressure range. The temperature inside the deposition chamber 2 is heated and controlled to the set deposition reaction temperature value. Step S3, Deposition reaction: The air-floating rotating device 5 is vertically moved to the deposition reaction area by the graphite stage lifting device 4 and the air-floating rotating device 5 is rotated at a uniform speed. The precursor atomizing gas is input into the mist equalization device 1. The precursor atomizing gas and the inert gas are uniformly mixed in the mist equalization device 1 and then flow into the deposition chamber 2, and chemical vapor deposition reaction is carried out on the substrate surface. Step S4: Determine whether the deposition reaction is complete: Monitor and maintain various process parameters (such as temperature, precursor volume, gas pressure, reaction time, etc.) during the deposition reaction in real time to determine whether the deposition reaction is complete. If yes, proceed to step S5; otherwise, proceed to step S3. Step S5, Exiting the deposition reaction: Stop inputting precursor atomizing gas into the uniform mist device 1, stop heating, stop the uniform rotation of the air flotation rotating device 5, turn off the negative pressure pump, and continue to input inert gas until the gas pressure in the deposition chamber 2 returns to normal pressure. Step S6: Determine if the liquid level is high: Visually observe whether the liquid level in the gas collection and liquid collection device 3 is high. If yes, proceed to step S7; otherwise, proceed to step S8. Step S7: Clean up the accumulated liquid: Clean up the accumulated liquid in the gas collection and liquid collection device; Step S7-1: The gas collecting and liquid accumulating device 3 is disengaged from the deposition chamber 2 by vertically moving the graphite stage lifting device 4. Step S7-2: Remove the gas and liquid collection device 3 from the graphite stage lifting device 4, clean the liquid inside the gas and liquid collection device 3, and then put the gas and liquid collection device 3 back onto the graphite stage lifting device 4. Step S7-3: The gas collection and liquid accumulation device 3 is tightly connected to the deposition chamber 2 by vertically moving the graphite stage lifting device 4. Step S8: Remove the substrate: Under normal pressure, the air-floating rotating device 5 is vertically moved to the sampling area by the graphite stage lifting device 4, and the substrate is removed from the deposition chamber 2 by the sampling device 9.

[0050] Example 5 This embodiment provides an atomized chemical vapor deposition (CVD) process using an atomized chemical vapor deposition apparatus provided in Embodiment 3, comprising the following steps: Step S1, Substrate Placement: Under normal pressure, the air-floating rotating device 5 is vertically moved to the sampling area by the graphite stage lifting device 4, and the substrate is placed in the deposition chamber 2 by the sampling device 9. Step S2: Prepare for deposition reaction: Inert gas is introduced into the mist equalization device 1, and negative pressure is used to evacuate the gas so that the deposition chamber 2 is within the set negative pressure range. The temperature inside the deposition chamber 2 is heated and controlled to the set deposition reaction temperature value. Step S3, Deposition reaction: The air-floating rotating device 5 is vertically moved to the deposition reaction area by the graphite stage lifting device 4 and the air-floating rotating device 5 is rotated at a uniform speed. The precursor atomizing gas is input into the mist equalization device 1. The precursor atomizing gas and the inert gas are uniformly mixed in the mist equalization device 1 and then flow into the deposition chamber 2, and chemical vapor deposition reaction is carried out on the substrate surface. Step S4: Determine whether the deposition reaction is complete: Monitor and maintain various process parameters (such as temperature, precursor volume, gas pressure, reaction time, etc.) during the deposition reaction in real time to determine whether the deposition reaction is complete. If yes, proceed to step S5; otherwise, proceed to step S3. Step S5, Exiting the deposition reaction: Stop inputting precursor atomizing gas into the uniform mist device 1, stop heating, stop the uniform rotation of the air flotation rotating device 5, turn off the negative pressure pump, and continue to input inert gas until the gas pressure in the deposition chamber 2 returns to normal pressure. Step S6: Determine if the liquid level is high: Visually observe whether the liquid level in the gas collection and liquid collection device 3 is high. If yes, proceed to step S7; otherwise, proceed to step S8. Step S7: Clean up the accumulated liquid: Clean up the accumulated liquid in the gas collection and liquid collection device; Step S7: Clean up the accumulated liquid: Open the liquid discharge port to drain the accumulated liquid in the gas-collecting liquid device 3; Step S7-3: The gas collection and liquid accumulation device 3 is tightly connected to the deposition chamber 2 by vertically moving the graphite stage lifting device 4. Step S8: Remove the substrate: Under normal pressure, the air-floating rotating device 5 is vertically moved to the sampling area by the graphite stage lifting device 4, and the substrate is removed from the deposition chamber 2 by the sampling device 9.

[0051] In practical applications, the first lifting plate 41 and the second lifting plate 42 can be moved vertically and smoothly by using a lead screw and a motor. This invention will not be described in detail. In industrial production, the operations of changing the substrate and cleaning the liquid can be carried out simultaneously, and the time of interruption of the deposition reaction is short. It can be regarded as having little impact on the deposition reaction process environment in the deposition chamber. Therefore, the control of precursor atomization mixed gas and temperature control are not described in detail. This invention can efficiently maintain the consistency of the process environment in the deposition chamber, which greatly improves the production efficiency and product quality of chemical vapor deposition reaction.

[0052] Finally, it should be noted that the above disclosure is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention. The scope of the present invention is limited only by the appended claims.

Claims

1. An atomizing chemical vapor deposition reactor, comprising a mist equalization device (1), a deposition chamber (2), an air flotation rotation device (5), and a sampling device (9), characterized in that: It also includes a gas and liquid collection device (3) and a graphite stage lifting device (4), wherein the gas and liquid collection device (3) is located between the deposition chamber (2) and the graphite stage lifting device (4).

2. The atomized chemical vapor deposition reactor according to claim 1, characterized in that: The gas collecting and liquid accumulating device (3) is made of quartz material and is detachably fixed to the graphite platform lifting device (4).

3. The atomized chemical vapor deposition reactor according to claim 2, characterized in that: The gas collection and liquid accumulation device (3) includes a gas collection and liquid accumulation shell (32) and a gas collection and liquid accumulation box (31). The gas collection and liquid accumulation box (31) is detachably installed inside the gas collection and liquid accumulation shell (32). An air inlet (33) is provided on the top of the gas collection and liquid accumulation box (31). An exhaust outlet (35) is provided on the upper outer side of the gas collection and liquid accumulation box (31). The gas collection and liquid accumulation shell (32) is provided with a positioning groove (36). The exhaust outlet (35) is located in the positioning groove (36). The air inlet (33) is connected vertically to the exhaust outlet (21).

4. The atomized chemical vapor deposition reactor according to claim 3, characterized in that: The gas collection and liquid accumulation box (31) is provided with a vertically downward isolation wall (34) from the top. The isolation wall (34) divides the gas collection and liquid accumulation box (31) into an inner gas collection chamber (37) and an outer gas collection chamber (38). The bottoms of the inner gas collection chamber (37) and the outer gas collection chamber (38) are connected. The air inlet (33) is located in the inner gas collection chamber (37).

5. The atomized chemical vapor deposition reactor according to claim 4, characterized in that: There are two gas and liquid collection boxes (31), which are placed symmetrically inside the gas and liquid collection shell (32).

6. The atomized chemical vapor deposition reactor according to claim 1, characterized in that: The graphite stage lifting device (4) includes a support tube (7), a first lifting plate (41), a second lifting plate (42), and a corrugated pipe (43). The bottom of the support tube (7) is set on the second lifting plate (42), and the top passes through the first lifting plate (41) and the gas and liquid collection device (3) to reach the deposition chamber (2). The air flotation rotating device (5) is located on the top of the support tube (7), and the gas and liquid collection device (3) is set on the first lifting plate (41). The air flotation rotating device (5) is made of graphite. The air flotation rotating device (5) includes a stage (51) and a base (52). The stage (51) is located on the base (52), and the stage (51) can rotate around the axis.

7. The atomized chemical vapor deposition reactor according to claim 1, characterized in that: The sampling device (9) includes a glove box (93), which is equipped with a sample taking robot (91) and a valve (92). The valve (92) is located at the outlet of the sampling channel (22). The glove box (93) is connected to the deposition chamber (2) through the sampling channel (22).

8. An atomized chemical vapor deposition reaction process, characterized in that: The atomized chemical vapor deposition apparatus according to any one of claims 1-7 includes the following steps: Step S1, placing the substrate: Under normal pressure, the air-floating rotating device (5) is vertically moved to the sampling area by the graphite stage lifting device (4), and the substrate is placed in the deposition chamber (2) by the sampling device (9); Step S2: Prepare for deposition reaction: Inert gas is input into the mist equalization device (1), and negative pressure is used to evacuate the gas so that the deposition chamber (2) is within the set negative pressure range. The temperature inside the deposition chamber (2) is heated and controlled to the set deposition reaction temperature value. Step S3, Deposition reaction: The air-floating rotating device (5) is vertically moved to the deposition reaction area by the graphite stage lifting device (4) and the air-floating rotating device (5) is rotated at a constant speed. The precursor atomizing gas is input into the mist equalization device (1). The precursor atomizing gas and the inert gas are uniformly mixed in the mist equalization device (1) and then flow into the deposition chamber (2) and chemical vapor deposition reaction is carried out on the substrate surface. Step S4: Determine whether the deposition reaction is complete: Monitor and maintain various process parameters (such as temperature, precursor volume, gas pressure, reaction time, etc.) during the deposition reaction in real time to determine whether the deposition reaction is complete. If yes, proceed to step S5; otherwise, proceed to step S3. Step S5, Exiting the deposition reaction: Stop inputting precursor atomizing gas into the uniform mist device (1), stop heating, stop the uniform rotation of the air flotation rotating device (5), turn off the negative pressure pump, and continue to input inert gas until the gas pressure in the deposition chamber (2) returns to normal pressure. Step S6: Determine if the liquid level is high: Visually observe whether the liquid level in the gas collection and liquid collection device (3) is high. If yes, proceed to step S7; otherwise, proceed to step S8. Step S7: Clean up the accumulated liquid: Clean up the accumulated liquid in the gas collection and liquid collection device (3); Step S8: Remove the substrate: Under normal pressure, the air-floating rotating device (5) is vertically moved to the sampling area by the graphite stage lifting device (4), and the substrate is removed from the deposition chamber (2) by the sampling device (9).

9. The atomized chemical vapor deposition reaction process according to claim 8, characterized in that: Step S7 includes the following steps: Step S7-1: The gas collecting and liquid accumulating device (3) is disengaged from the deposition chamber (2) by vertically moving the graphite stage lifting device (4); Step S7-2: Remove the gas collecting and liquid accumulating device (3) from the graphite stage lifting device (4), clean the liquid inside the gas collecting and liquid accumulating device (3), and then put the gas collecting and liquid accumulating device (3) back onto the graphite stage lifting device (4). Step S7-3: The gas collecting and liquid accumulating device (3) is tightly connected to the deposition chamber (2) by vertically moving the graphite stage lifting device (4).

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