Process module and semiconductor processing system having independently controllable exhaust assemblies

Abstract

A process module configured for performing simultaneous epitaxial deposition of material layers is disclosed. The module includes a common chamber housing having two chamber bodies disposed therein. Each chamber body includes a ceramic weldment having an upper wall and a lower wall, an injection chamber flange and an exhaust chamber flange, and an exhaust flange having an inner sealing surface and an outer sealing surface. A cover plate forms a seal with the outer sealing surface of the exhaust flange. The module is further characterized by a pressure cylinder having a piston that exerts a compressive force between the exhaust chamber flange and the injection chamber flange. A semiconductor processing system including such a process module is also disclosed.

Description

Technical Field

[0001] This disclosure generally relates to the field of systems and apparatuses used in the manufacture of semiconductor devices and integrated circuits. More specifically, this disclosure relates to a processing module configured to perform simultaneous epitaxial deposition of material layers, a semiconductor processing system including such a processing module, and a method for performing simultaneous epitaxial deposition of material layers. Background Technology

[0002] Semiconductor processing methods such as chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) are common processes used to form thin layers of material on substrates such as silicon wafers. For example, in a CVD process, gaseous molecules of the material to be deposited are supplied to the substrate to form a thin layer of that material on the substrate through a chemical reaction. This deposited thin layer can be polycrystalline, amorphous, or epitaxial.

[0003] During a typical CVD process, one or more substrates are placed on a substrate support (e.g., a pedestal) inside a chamber within the reactor. Both the substrate and the substrate support are typically heated to a desired temperature. In a typical substrate deposition step, reactant gases pass through the heated substrate, depositing a thin layer of the desired material onto the substrate surface. If the deposited layer has the same crystal structure as the underlying silicon surface, it is called an epitaxial layer (or single crystal). These layers can then be used to form semiconductor devices, such as integrated circuits, through subsequent processes.

[0004] Typically, CVD processes are performed at high temperatures to accelerate chemical reactions and produce high-quality films, with some processes (such as epitaxial silicon deposition) occurring at extremely high temperatures (e.g., above 1800°C). However, as device structures become increasingly complex with the number of deposited layers, the time required to deposit these layers also increases. This increase in deposition time affects substrate yield and reduces tooling efficiency. Therefore, chemical vapor deposition systems with increased yield and flexibility are needed.

[0005] Any discussion (including the discussion of the problems and solutions set forth in this section) is included in this disclosure for the purpose of providing background to this disclosure and should not be construed as an admission that any or all of the discussions were known at the time of making this invention or otherwise constitute prior art. Summary of the Invention

[0006] This invention provides a simplified overview of some concepts, which will be described in further detail below. This invention is not intended to require the identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0007] According to various embodiments of the present disclosure, a processing module configured to perform simultaneous epitaxial deposition of a material layer is provided. The processing module includes: a common chamber housing; a first chamber body disposed within the common chamber housing, the first chamber body including a first ceramic weldment having a first upper wall and a first lower wall, the first upper wall extending longitudinally between a first injection chamber flange and a longitudinally opposed first venting chamber flange, the first lower wall below the first upper wall and parallel to the first upper wall; a first venting flange including a first inner sealing surface and a first outer sealing surface, the first inner sealing surface configured to form a seal with the first venting chamber flange; a first cover plate including a first plate sealing surface configured to form a seal with the first outer sealing surface of the first venting flange; and a first pressure cylinder and a second pressure cylinder connected to the common chamber housing and including a first piston and a second piston, the first piston and the second piston being coupled to the first venting flange and configured to apply pressure between the first venting flange and the first injection chamber flange. The system comprises: a first chamber body disposed within a common chamber housing, the second chamber body including a second ceramic weldment having a second upper wall and a second lower wall, the second upper wall extending longitudinally between a second injection chamber flange and a longitudinally opposing second exhaust chamber flange, the second lower wall being below the second upper wall and parallel to the second upper wall; a second exhaust flange including a second inner sealing surface and a second outer sealing surface, the second inner sealing surface being configured to form a seal with the second exhaust chamber flange; a second cover plate including a second plate sealing surface, the second plate sealing surface being configured to form a seal with the second outer sealing surface of the second exhaust flange; and a third pressure cylinder and a fourth pressure cylinder connected to the common chamber housing and including a third piston and a fourth piston, the third piston and the fourth piston being coupled to the second exhaust flange and configured to apply a compressive force between the second exhaust flange and the second exhaust chamber flange, wherein the first chamber body and the second chamber body are laterally separated by a lateral separation distance and are positioned adjacent to each other on either side of a central plane.

[0008] In some embodiments, a first pressure cylinder is attached to a first side of a first exhaust flange at a first vertical position, and a second pressure cylinder is attached to a second side of a first exhaust flange at a second vertical position different from the first vertical position.

[0009] In some embodiments, a third pressure cylinder is attached to a first side of the second exhaust flange at a first vertical position, and a fourth pressure cylinder is attached to a second side of the second exhaust flange at a second vertical position different from the first vertical position.

[0010] In some embodiments, the second pressure cylinder is positioned above the third pressure cylinder.

[0011] In some embodiments, a first chamber body has a first chamber exterior and a first chamber interior, the first chamber exterior including a plurality of first external ribs extending laterally around the first chamber exterior, the first chamber interior surrounding a first processing volume, and wherein a second chamber body has a second chamber exterior and a second chamber interior, the second chamber exterior including a plurality of second external ribs extending laterally around the second chamber exterior, the second chamber interior surrounding a second processing volume.

[0012] In some embodiments, the first upper wall and the second upper wall include an upper wall plate portion and an upper wall rib portion, the upper wall plate portion and the upper wall rib portion defining an unwelded ribbed region of the upper wall formed from a first single quartz workpiece using a subtractive manufacturing technique, thereby forming an upper portion of a plurality of first external ribs and a plurality of second external ribs.

[0013] In some embodiments, the first lower wall and the second lower wall include a lower wall plate portion and a lower wall rib portion, the lower wall plate portion and the lower wall rib portion defining an unwelded ribbed region of the lower wall formed from a second single quartz workpiece using a subtractive manufacturing technique, and forming a lower portion of a plurality of first external ribs and a plurality of second external ribs.

[0014] In some embodiments, the processing module further includes a longitudinal coolant channel disposed between the first chamber body and the second chamber body, the longitudinal coolant channel being at least partially defined by the lateral separation distance between the first chamber body and the second chamber body.

[0015] In some embodiments, the processing module further includes a cooling system coupled to a longitudinal coolant passage, the cooling system being configured to provide a coolant fluid flow through the longitudinal coolant passage, thereby providing at least partial temperature control of the first exhaust flange and the second exhaust flange.

[0016] In some embodiments, the longitudinal coolant passage further includes a first longitudinal diaphragm member coupled to a first chamber body and a second longitudinal diaphragm member coupled to a second chamber body; wherein the first longitudinal diaphragm member and the second longitudinal diaphragm member are laterally positioned adjacent to each other on either side of a central plane; and wherein the first longitudinal diaphragm member and the second longitudinal diaphragm member form a heat exchanger assembly configured to receive a coolant fluid flow from a cooling system.

[0017] According to various embodiments of the present disclosure, a semiconductor processing system is provided, including: a wafer transfer module; a gate valve assembly coupled to the wafer transfer module; a processing module coupled to the gate valve assembly, the processing module including: a common chamber housing; a first chamber body disposed within the common chamber housing, the first chamber body including a first ceramic weldment having a first upper wall and a first lower wall, the first upper wall extending longitudinally between a first injection chamber flange and a longitudinally opposed first exhaust chamber flange, the first lower wall below the first upper wall and parallel to the first upper wall; a first exhaust flange coupled to the first injection chamber flange, the first exhaust flange including a first exhaust port; a second chamber body including a second ceramic weldment having a second upper wall and a second lower wall, the second upper wall extending longitudinally between a second injection chamber flange and a longitudinally opposed second exhaust chamber flange, the second lower wall below the second upper wall and parallel to the second upper wall; a second exhaust flange coupled to the second injection chamber flange, the second exhaust flange including a second exhaust port; and a vacuum assembly coupled to the first exhaust port and the second exhaust port, the vacuum assembly being configured to provide independent control of the exhaust pressure from each of the first chamber body and the second chamber body.

[0018] In some embodiments, the semiconductor processing system further includes: a common vacuum source; a first exhaust duct connected to a first exhaust port and the common vacuum source; a first pressure control valve operably connected to the first exhaust duct; a second exhaust duct connected to a second exhaust port and the common vacuum source; and a second pressure control valve operably connected to the second exhaust duct.

[0019] In some embodiments, the first exhaust flange further includes a first inner sealing surface and a first outer sealing surface, the first inner sealing surface being configured to form a seal with the first exhaust chamber flange.

[0020] In some embodiments, the processing module further includes a first cover plate including a first plate sealing surface configured to form a seal with a first outer sealing surface of the first vent flange.

[0021] In some embodiments, the processing module further includes a first pressure cylinder and a second pressure cylinder, which are connected to a common chamber housing and include a first piston and a second piston, which are coupled to a first exhaust flange and configured to apply a compressive force between the first exhaust flange and a first injection chamber flange.

[0022] In some embodiments, the second exhaust flange further includes a second inner sealing surface and a second outer sealing surface, the second inner sealing surface being configured to form a seal with the second exhaust chamber flange.

[0023] In some embodiments, the processing module further includes a second cover plate having a second plate sealing surface configured to form a seal with the outer sealing surface of the second vent flange.

[0024] In some embodiments, the processing module further includes a third pressure cylinder and a fourth pressure cylinder, which are connected to the common chamber housing and include a third piston and a fourth piston, which are coupled to the second exhaust flange and configured to apply a compressive force between the second exhaust flange and the second exhaust chamber flange.

[0025] In some embodiments, the semiconductor processing system includes a clustered platform.

[0026] In one aspect, a processing module configured to perform simultaneous epitaxial deposition of a material layer is provided, the processing module comprising: a common chamber housing; a first chamber body disposed within the common chamber housing, the first chamber body including a first ceramic weldment having a first upper wall and a first lower wall, the first upper wall extending longitudinally between a first injection chamber flange and a longitudinally opposed first venting chamber flange, the first lower wall being below the first upper wall and parallel to the first upper wall; a first venting flange including a first inner sealing surface and a first outer sealing surface, the first inner sealing surface being configured to form a seal with the first venting chamber flange; a first cover plate including a first plate sealing surface, the first plate sealing surface being configured to form a seal with the first outer sealing surface of the first venting flange; and a first pressure cylinder and a second pressure cylinder connected to the common chamber housing and including a first piston and a second piston, the first piston and the second piston being coupled to the first venting flange and configured to apply a compressive force between the first venting flange and the first injection chamber flange. The processing module also includes a second chamber body disposed within a common chamber housing. The second chamber body includes a second ceramic weldment having a second upper wall and a second lower wall. The second upper wall extends longitudinally between a second injection chamber flange and a longitudinally opposing second exhaust chamber flange. The second lower wall is below the second upper wall and parallel to it. The processing module also includes a second exhaust flange, which includes a second inner sealing surface and a second outer sealing surface. The second inner sealing surface is configured to form a seal with the second exhaust chamber flange. The processing module also includes a second cover plate, which includes a second plate sealing surface configured to form a seal with the second outer sealing surface of the second exhaust flange. The processing module also includes a third pressure cylinder and a fourth pressure cylinder, which are connected to the common chamber housing and include a third piston and a fourth piston. The third piston and the fourth piston are coupled to the second exhaust flange and configured to apply a compressive force between the second exhaust flange and the second exhaust chamber flange. The first chamber body and the second chamber body are laterally separated by a lateral separation distance and are positioned adjacent to each other on either side of a central plane. The processing module may further include a first pressure cylinder attached to a first side of a first exhaust flange at a first vertical position, and a second pressure cylinder attached to a second side of the first exhaust flange at a second vertical position different from the first vertical position. The processing module may further include a first chamber body having a first chamber exterior and a first chamber interior, the first chamber exterior including a plurality of first external ribs extending laterally around the first chamber exterior, the first chamber interior surrounding a first processing volume, and a second chamber body having a second chamber exterior and a second chamber interior, the second chamber exterior including a plurality of second external ribs extending laterally around the second chamber exterior, the second chamber interior surrounding a second processing volume. Other technical features will be apparent to those skilled in the art from the following figures, description, and claims. In one aspect, a semiconductor processing system includes a wafer transfer module.The semiconductor processing system also includes a gate valve assembly coupled to a wafer transfer module; a processing module coupled to the gate valve assembly, the processing module including: a common chamber housing; a first chamber body disposed within the common chamber housing, the first chamber body including a first ceramic weldment having a first upper wall and a first lower wall, the first upper wall extending longitudinally between a first injection chamber flange and a longitudinally opposed first exhaust chamber flange, the first lower wall below the first upper wall and parallel to the first upper wall; a first exhaust flange coupled to the first injection chamber flange, the first exhaust flange including a first exhaust port; a second chamber body including a second ceramic weldment having a second upper wall and a second lower wall, the second upper wall extending longitudinally between a second injection chamber flange and a longitudinally opposed second exhaust chamber flange, the second lower wall below the second upper wall and parallel to the second upper wall; a second exhaust flange coupled to the second injection chamber flange, the second exhaust flange including a second exhaust port; and a vacuum assembly coupled to the first exhaust port and the second exhaust port, the vacuum assembly being configured to provide independent control of the exhaust pressure from each of the first chamber body and the second chamber body. The semiconductor processing system may further include, wherein the exhaust assembly further includes: a common vacuum source; a first exhaust duct connected to a first exhaust port and the common vacuum source; a first pressure control valve operably connected to the first exhaust duct; a second exhaust duct connected to a second exhaust port and the common vacuum source; and a second pressure control valve operably connected to the second exhaust duct. The semiconductor processing system may also include, wherein the semiconductor processing system comprises a clustered platform. Other technical features will be apparent to those skilled in the art from the following figures, description, and claims. The processing module may further include, wherein a third pressure cylinder is attached to a first side of a second exhaust flange in a first vertical position, and a fourth pressure cylinder is attached to a second side of the second exhaust flange in a second vertical position different from the first vertical position. The processing module may further include, wherein a second pressure cylinder is positioned above the third pressure cylinder. The processing module may further include, wherein a first upper wall and a second upper wall include an upper wall plate portion and an upper wall rib portion, the upper wall plate portion and the upper wall rib portion defining an unwelded ribbed area of ​​the upper wall formed from a first single quartz workpiece using a subtractive manufacturing technique, thereby forming an upper portion of a plurality of first external ribs and a plurality of second external ribs. The processing module may further include a first lower wall and a second lower wall comprising a lower wall plate portion and a lower wall rib portion, the lower wall plate portion and the lower wall rib portion defining an unwelded ribbed region of the lower wall formed from a second single quartz workpiece using a subtractive manufacturing technique, and forming a lower portion of a plurality of first external ribs and a plurality of second external ribs. The processing module may further include a longitudinal coolant channel disposed between the first chamber body and the second chamber body, the longitudinal coolant channel being at least partially defined by a lateral separation distance between the first chamber body and the second chamber body.The processing module may further include a cooling system coupled to a longitudinal coolant channel, the cooling system being configured to provide a coolant fluid flow through the longitudinal coolant channel, thereby providing at least partial temperature control of the first exhaust flange and the second exhaust flange. The processing module may further include, wherein the longitudinal coolant channel includes a first longitudinal diaphragm member coupled to a first chamber body and a second longitudinal diaphragm member coupled to a second chamber body; wherein the first and second longitudinal diaphragm members are laterally positioned adjacent to each other on either side of a central plane; and wherein the first and second longitudinal diaphragm members form a heat exchanger assembly configured to receive a coolant fluid flow from the cooling system. The semiconductor processing system may further include, wherein the first exhaust flange includes a first inner sealing surface and a first outer sealing surface, the first inner sealing surface being configured to form a seal with the first exhaust flange. The semiconductor processing system may further include, wherein the processing module also includes a first cover plate including a first plate sealing surface, the first plate sealing surface being configured to form a seal with the first outer sealing surface of the first exhaust flange. The semiconductor processing system may further include a processing module that includes a first pressure cylinder and a second pressure cylinder, the first and second pressure cylinders being connected to a common chamber housing and including a first piston and a second piston, the first and second pistons being coupled to a first exhaust flange and configured to apply a compressive force between the first exhaust flange and a first injection chamber flange. The semiconductor processing system may further include a second exhaust flange that includes a second inner sealing surface and a second outer sealing surface, the second inner sealing surface being configured to form a seal with a second exhaust chamber flange. The semiconductor processing system may further include a processing module that includes a second cover plate that includes a second plate sealing surface, the second plate sealing surface being configured to form a seal with the outer sealing surface of the second exhaust flange. The semiconductor processing system may further include a processing module that includes a third pressure cylinder and a fourth pressure cylinder, the third and fourth pressure cylinders being connected to the common chamber housing and including a third piston and a fourth piston, the third and fourth pistons being coupled to the second exhaust flange and configured to apply a compressive force between the second exhaust flange and the second exhaust chamber flange. Other technical features will be apparent to those skilled in the art from the following figures, description, and claims.

[0027] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be embodied or implemented in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0028] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings. The invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0029] To facilitate identification of any particular element or action being discussed, one or more of the most significant digits in the reference numerals refer to the drawing number in which the element was first introduced.

[0030] Embodiments of this disclosure can be more fully understood when considered in conjunction with the following illustrative drawings, and by referring to the detailed description and claims.

[0031] Figure 1 This is a schematic diagram of a semiconductor processing system including a processing module according to one or more embodiments, the processing module including two chamber bodies.

[0032] Figure 2 A semiconductor processing system in a cluster configuration according to one or more embodiments is shown, the semiconductor processing system having a processing module comprising two chamber bodies.

[0033] Figure 3 A plan view of a processing module comprising two chambers is shown according to one or more embodiments.

[0034] Figure 4 A cross-sectional schematic diagram of a processing module comprising two chamber bodies according to one or more embodiments is shown.

[0035] Figure 5 A further cross-sectional view of a processing module comprising two chamber bodies according to one or more embodiments is shown.

[0036] Figure 6 A view of the first and second chamber bodies according to one embodiment is shown.

[0037] Figure 7 This is an exploded perspective view of a chamber body including ceramic welded components according to one or more embodiments.

[0038] Figure 8 A schematic diagram of a portion of a semiconductor processing system including a gas delivery system, according to one or more embodiments, is shown.

[0039] Figure 9 A further schematic diagram of a portion of a semiconductor processing system including a gas delivery system, according to one or more embodiments, is shown.

[0040] Figure 10A portion of a gas delivery system comprising a precursor source system and an etchant source system according to one or more embodiments is shown.

[0041] Figure 11 A plan view of a portion of a processing module including an exhaust assembly, according to one or more embodiments, is shown.

[0042] Figure 12 A schematic diagram of an exhaust assembly according to one or more embodiments is shown.

[0043] Figure 13 An exploded view of elements constituting part of an exhaust assembly according to one or more embodiments is shown.

[0044] Figure 14 Further exploded views of elements constituting part of an exhaust assembly according to one or more embodiments are shown.

[0045] Figure 15 An exhaust flange according to one or more embodiments is shown.

[0046] Figure 16 A view of a processing module including a lifting mechanism for raising and lowering the lamp housing is shown.

[0047] Figure 17 Another view of the processing module is shown, which includes a lifting mechanism for raising and lowering the lamp housing.

[0048] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0049] The following description of exemplary embodiments of the methods and compositions is merely illustrative and for purposes of explanation only. The following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having indicated features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments including different combinations of said features or steps.

[0050] As used herein, the term "substrate" can refer to any one or more underlying materials that can be used to form or on which devices, circuits, or films can be formed according to the methods of embodiments of this disclosure. A substrate may comprise a bulk material, such as silicon (e.g., single-crystal silicon), other group IV materials (e.g., germanium), or other semiconductor materials (e.g., group II-VI or III-V semiconductor materials), and may comprise one or more layers overlying or underlying the bulk material. Furthermore, the substrate may include various features formed within or on at least a portion of the substrate layers, such as recesses, protrusions, etc. By way of example, a substrate may comprise a bulk semiconductor material and an insulating or dielectric material layer covering at least a portion of the bulk semiconductor material. Furthermore, the term "substrate" can refer to any one or more underlying materials that can be used or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous. A "substrate" can be in any form, such as powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes. Substrates can be made of materials such as silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. The continuous substrate may extend beyond the boundary of the processing chamber where the deposition process occurs and may move through the processing chamber, allowing the process to continue until the end of the substrate is reached. The continuous substrate can be supplied from a continuous substrate supply system that allows the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, fiber webs, flexible materials, bundled continuous filaments or fibers (i.e., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or sheet on which a non-continuous substrate is mounted. For example, the substrate may contain semiconductor material. The semiconductor material may contain or be used to form one or more of the source, drain, or channel regions of a device. The substrate may also include an interlayer dielectric (e.g., silicon oxide) and / or a high-k dielectric material layer covering the semiconductor material. In this document, a high-k dielectric material is a material with a dielectric constant greater than that of silicon dioxide.

[0051] The terms "precursor" and / or precursor gas can refer to a gas or combination of gases that participate in a chemical reaction that produces another compound. For example, a precursor gas can be used to grow an epitaxial layer containing silicon and germanium. Precursor gases can include one or more deposition gases, one or more dopant gases, or a combination of one or more deposition gases and one or more dopant gases. Precursor gases can include silicon precursors, such as higher-order silicon precursors. Silicon precursors can also include silanes (SiH4) or chlorosilanes (SiCl4). In some examples, higher-order silicon precursors can have one silicon atom per molecule, such as silanes. Higher-order silicon precursors can have two or more silicon atoms per molecule, such as silanes. In some examples, higher-order silicon precursors can have three or more silicon atoms. Higher-order silicon precursors can include non-halogenated higher-order silicon precursors, such as trisilanes and tetrasilanes. Higher-order silicon precursors can include halogenated higher-order silicon precursors, such as higher-order chlorine-containing precursors, such as chlorosilanes, dichlorosilanes, trichlorosilanes, and tetrachlorosilanes. Precursor gases may include higher-order germanium-containing material layer precursors, such as germanane, digermanane, trigermanane, their chloride derivatives, and mixtures thereof. Precursor gases may also include higher-order P-type doped precursors, such as diborane (B₂H₆). Precursor gases may also include higher-order N-type doped precursors, such as phosphine (PH₃) and arsine (AsH₃).

[0052] As used herein, the term “epitaxial layer” can refer to a basic single-crystal layer directly on the underlying basic single-crystal substrate or layer.

[0053] As used herein, the term “chemical vapor deposition” can refer to any process in which a substrate is exposed to one or more volatile precursors / reactants (and optionally additional processing gases) that react and / or decompose on the substrate surface to produce the desired deposition.

[0054] As used in this article, the term "integral" can refer to various structural components integrated as single-piece units without easily identifiable seams and without openings to accommodate intersecting structures.

[0055] In this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any range indicated may include or exclude endpoints. Furthermore, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value and includes equivalents, and in some embodiments may refer to an average, median, representative value, multi-value, etc. Additionally, in this disclosure, the terms “comprising,” “consisting of,” and “having” may, in some embodiments, independently mean “generally or broadly comprising,” “including,” “substantially consisting of,” or “consisting of.” The meaning of any definition in this disclosure does not necessarily exclude the common and customary meaning in some embodiments. In some cases, percentages indicated herein may be relative or absolute percentages.

[0056] Numerous example materials are given in all embodiments of this disclosure; it should be noted that the chemical formulas given for each example material should not be construed as limiting, and the non-limiting example materials given should not be limited by the given example stoichiometry.

[0057] In this specification, it will be understood that the terms "on" or "above" may be used to describe relative positional relationships. Another element, film, or layer may be directly on the mentioned layer, or another layer (intermediate layer) or element may be inserted between them, or a layer may be disposed on the mentioned layer but not completely cover the surface of the mentioned layer. Therefore, unless the term "directly" is used alone, the terms "on" or "above" will be interpreted as relative concepts. Similarly, it will be understood that the terms "below," "under," or "beneath" will be interpreted as relative concepts.

[0058] Various embodiments of this disclosure relate to a processing module including a first chamber body and a second chamber body. The processing module is configured to simultaneously epitaxially deposit material layers within the first chamber body and the second chamber body. A semiconductor processing system including such a processing module is also disclosed, as well as an epitaxial deposition method using the processing module to form epitaxial material layers.

[0059] For certain deposition techniques, the semiconductor processing systems typically employed may have limited substrate yields. This limited substrate yield can be due to a number of factors, including but not limited to the number of substrate supports per unit area occupied by the semiconductor processing system (e.g., in a clustered platform). When the deposition process is performed for extended periods (e.g., more than 60 minutes or longer), the limitation on the number of substrate supports per unit area in the semiconductor processing system can have a particularly significant impact on substrate yield.

[0060] Some semiconductor processing systems, such as atomic layer deposition (ALD) systems, have sought to increase substrate yield by using processing modules comprising two or more metal chambers, each including a spray-head type gas injection assembly. However, processing modules comprising multiple metal chambers may not be utilized or directly applicable to epitaxial deposition processes performed at high deposition temperatures. In such high-temperature processes, reaction chambers formed from quartz components that are transparent to heating lamps positioned above and / or below the quartz components can be utilized.

[0061] According to various embodiments of this disclosure, a processing module comprising two quartz components is disposed within a common housing. Such a processing module (referred to herein as a dual-chamber processing module) can increase the number of substrate supports per unit area for high-temperature epitaxial deposition processes, and thus increase substrate yield through a semiconductor processing system (e.g., a clustered platform) including such a dual-chamber processing module.

[0062] For purposes of explanation and illustration rather than limitation, Figure 1 and Figure 2 An exemplary semiconductor processing system including a dual-chamber processing module is illustrated. The systems and methods of this disclosure can be used for epitaxial deposition of material layers (such as epitaxial silicon-containing layers), achieving increased yield and efficiency by employing a dual-chamber processing module configured to perform parallel epitaxial CVD processes. As those skilled in the art will understand from this disclosure, semiconductor processing systems (including dual-chamber processing modules) configured for other material layer deposition operations (e.g., atomic layer deposition, plasma-enhanced deposition, etc.) as well as semiconductor processing systems configured for processing operations other than epitaxial material layer deposition can also benefit from this disclosure.

[0063] Figure 1 A schematic diagram of a semiconductor processing system 100 including a processing module (including processing module 102) is shown. The semiconductor processing system 100 also includes a gas source assembly 104, a vacuum assembly 106, and a controller 108. The gas source assembly 104 is connected to the processing module 102 via a precursor supply conduit 110 and is configured to supply a flow of processing gas 112 to the processing module 102.

[0064] Processing module 102 may include two independent chamber devices, namely a first chamber device 114 and a second chamber device 116. The first chamber device 114 and the second chamber device 116 may include isolated and discrete chamber bodies, each having an independent and isolated internal processing volume, at least in terms of gas communication, temperature control, and vacuum level, as described in detail below. Processing module 102 may be configured to expose a first substrate 118 supported on a first substrate support 120 to a process gas 112. Processing module 102 may also be configured to independently expose a second substrate 122 supported on a second substrate support 124 to the process gas 112. Gas source assembly 104 may be configured to independently control the flow parameters of the process gas 112 above the first substrate 118 and the second substrate 122. In some examples, the first substrate 118 and the second substrate 122 are exposed to the process gas 112 under selected environmental conditions (e.g., temperature, pressure, etc.) to allow epitaxial material layers 126a and 126b to be independently deposited onto the first substrate 118 and the second substrate 122.

[0065] In some embodiments, process gas 112 may be supplied to processing module 102 by gas source assembly 104 and may include one or more silicon-containing precursors. Examples of suitable silicon-containing precursors include non-halogenated silicon-containing material layer precursors, such as silane (SiH4) and disilane (Si2H6), and halide-containing silicon-containing material layer precursors, such as dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si). According to some examples, process gas 112 may include alloying components, such as germanium-containing material layer precursors (e.g., germanane (GeH4)), gallium-containing material layer precursors (e.g., triethylgallium Ga(C2H5)3), or indium-containing material layer precursors (e.g., trimethylindium ((CH3)3In)). It is contemplated that, in some examples, process gas 112 may include one or more doped material layer precursors. Examples of suitable doped material layer precursors include p-type dopants such as boron (B) and arsenic (As) and n-type dopants such as phosphorus (P) and antimony (Sb). It is conceivable that, according to certain examples, the process gas 112 may be co-flowed with a diluent / carrier gas such as hydrogen (H2) or nitrogen (N2) and / or with an etchant such as hydrochloric acid (HCl) or chlorine (Cl2).

[0066] Vacuum assembly 106 is connected to processing module 102 via exhaust duct 132, which is fluidly connected to the external environment outside the semiconductor processing system 100 (e.g., via vacuum pump 130 and / or elimination device, such as a scrubber). Vacuum assembly 106 (together with processing module exhaust assembly) is configured to independently deliver residual precursors / reactants and / or any reaction byproducts from first chamber device 114 and second chamber device 116 to the external environment.

[0067] It is conceivable that controller 108 may be operatively connected to one or more of the gas source assembly 104, processing module 102, and vacuum assembly 106 to control the deposition of material layers (e.g., 126a and 126b) onto substrates 118 and 122. In this regard, controller 108 may be connected to one or more of the gas source assembly 104, processing module 102, and vacuum assembly 106 via a wired or wireless link 128 to at least control the temperature of the substrates (118, 122), the pressure within the first chamber assembly 114 and the second chamber assembly 116, and the flow rate of processing gas 112 to the first chamber assembly 114 and the second chamber assembly 116. For example, the temperature of the substrates (118, 122) may be controlled using heater elements and / or temperature sensors included in processing module 102 and operatively associated with and / or communicating with controller 108. The pressure within the first chamber assembly 114 and the second chamber assembly 116 may be controlled using a vacuum pump 130 fluidly communicated with processing module 102 via an exhaust duct 132.

[0068] Figure 2Another exemplary semiconductor processing system 200 is shown. The semiconductor processing system 200 includes a cluster platform 202 that includes two or more processing modules, including at least one processing module 102 according to one or more embodiments.

[0069] More specifically, the semiconductor processing system 200 includes an exemplary processing module 102, a back-end transfer module 204, and a gate valve assembly 206. The processing module 102 is coupled to the back-end transfer module 204 via the gate valve assembly 206. The semiconductor processing system 200 also includes a device front-end module 208, a controller 108, and a vacuum assembly 106.

[0070] exist Figure 2 In the example shown, the semiconductor processing system 200 includes four (4) processing modules, one or more of which include a dual-chamber processing module. In some examples, processing module 102 includes a first chamber device 114 containing a first chamber body (not shown) and a second chamber device 116 containing a second chamber body (not shown). The first chamber body and the second chamber body are described in detail below. Each chamber device 114 and 116 of processing module 102 includes a heater configured to independently heat a first substrate 118 and a second substrate 122, as described in detail below. In some examples, the first chamber device 114 and the second chamber device 116 may be configured to perform a parallel deposition process. In some embodiments, the deposition process may be performed simultaneously within the first chamber device 114 and the second chamber device 116. In some embodiments, the deposition process may be performed simultaneously within the first chamber device 114 and the second chamber device 116.

[0071] In other examples, in addition to one or more dual-chamber processing modules, the clustered platform 202 may also include one or more single-chamber processing modules and / or one or more four-chamber modules having four (4) chamber arrangements. For example, each processing module may be configured to deposit epitaxial material layers. Figure 2 The processing module 102 can be configured to deposit an epitaxial layer onto a first substrate 118 and a second substrate 122 using chemical vapor deposition (CVD) technology. In some examples, the first chamber device 114 and the second chamber device 116 may include chambers isolated and discrete in terms of gas communication therebetween. The first chamber device 114 and the second chamber device 116 can be configured to perform parallel deposition processes. In some embodiments, the deposition process may be performed simultaneously within the first chamber device 114 and the second chamber device 116. In some embodiments, the deposition process may be performed simultaneously within the first chamber device 114 and the second chamber device 116.

[0072] Process gas source 210 is fluidly coupled to the first chamber assembly 114 and the second chamber assembly 116 (e.g., via gas source assembly 104) and configured to independently supply process gas to the chamber assemblies and their associated chamber bodies. Gate valve assembly 206 couples processing module 102 to back-end transfer module 204 and is configured to provide selective communication between processing module 102 and back-end transfer module 204. In this regard, gate valve assembly 206 is contemplated to allow transfer of the substrate between back-end transfer module 204 and processing module 102 (e.g., 118 and 122) before and after the epitaxial material layer is deposited onto the substrate.

[0073] According to some examples, gate valve assembly 206 may include a first processing module gate valve, and processing module 102 may include a second processing module gate valve, which also connects processing module 102 to back-end transfer module 204. It is contemplated that, in some examples, processing gas source 210 may include reactants or precursors suitable for depositing material layers, such as using CVD deposition techniques (or ALD and / or etching processes, etc.). It is also contemplated that, according to some examples, one or more processing modules of semiconductor processing system 200 may include a plasma unit configured to provide reactants as suitable plasma to a substrate. In this regard, one or more processing modules of semiconductor processing system 200 may be configured to deposit material layers onto a substrate using, for example, plasma-enhanced atomic layer deposition (PEALD) or PECVD techniques.

[0074] The back-end transfer module 204 includes a back-end chamber body 218 and a back-end substrate transfer robot 220. The back-end chamber body 218 is arranged along a transfer axis 248. It is conceivable that the back-end substrate transfer robot 220 is arranged within and supported within the back-end chamber body 218 to move relative to the back-end chamber body 218, thereby transferring substrates (e.g., first substrate 118 and second substrate 122) between the gate valve assembly 206 and the processing module 102. In some examples, the back-end chamber body 218 may have a polygonal shape. In this respect, the back-end chamber body 218 may have five sides, fewer than five sides (e.g., a rectangular or square shape), or more than five sides (e.g., a hexagonal shape), and may have a regular or irregular polygonal shape.

[0075] The device front-end module 208 is coupled to the load locking device 228 and includes a housing 222, a front-end substrate transfer robot 224, and one or more load ports 226. The housing 222 houses the front-end substrate transfer robot 224. The front-end substrate transfer robot 224 is within the housing 222 and is movable relative to the housing 222 to transfer a substrate between the one or more load ports 226 and the load locking device 228. The one or more load ports 226 are connected to the housing 222 and configured to house a chamber 230 containing one or more substrates before and after material layers are deposited onto the substrate. In some examples, the chamber 230 may include a standard mechanical interface chamber. According to some examples, the chamber 230 may include a front-opening unified chamber. Although shown and described herein with three (3) load ports, it should be understood and recognized that the device front-end module 208 may include fewer or more load ports and remains within the scope of this disclosure.

[0076] Controller 108 is operatively connected to semiconductor processing system 200 and includes device interface 232, processor 234, user interface 236, and memory 238. Device interface 232 connects processor 234 to semiconductor processing system 200, for example, via (or through) a wired or wireless link 240. Processor 234 is operatively connected to user interface 236 and configured to communicate with memory 238. Memory 238 includes a non-transitory machine-readable medium having a plurality of program modules 242 recorded thereon, the program modules 242 containing instructions that, when read by processor 234, cause processor 234 to perform certain operations. These operations include operations of material layer deposition methods, as described below.

[0077] As mentioned earlier, semiconductor processing systems 100 and 200 (respectively...) Figure 1 and Figure 2 It includes one or more dual-chamber processing modules, each comprising independently controllable first and second chamber units, each chamber unit including an associated chamber body, namely a first chamber body and a second chamber body. (Reference) Figures 3-7 An exemplary dual-chamber processing module of this disclosure is shown and described in more detail. For example, Figure 3 A plan view of the dual-chamber processing module is shown. Figure 4 It shows the passage through plane AA 304 (e.g.) Figure 3 A cross-sectional view of the dual-chamber processing module (shown). Figure 5 It shows the passage through plane 306 (e.g.) Figure 3 The cross-sectional view shown is shown.

[0078] In various embodiments, a processing module 102 is disclosed. Processing module 102 ( Figure 3 and Figure 4The process module 102 includes a first chamber body 308 and a second chamber body 310, and may be referred to as a dual-chamber processing module. In some embodiments, the processing module 102 may be configured to perform epitaxial deposition of a material layer. In some examples, the processing module 102 may be configured to perform epitaxial deposition of a silicon-containing layer. In some examples, the processing module 102 may be configured to perform dual epitaxial deposition of a silicon-containing layer simultaneously or synchronously within the first chamber body 308 and the second chamber body, thereby increasing the yield of the semiconductor processing system (e.g., 100 or 200) including the dual-chamber processing module 302.

[0079] like Figure 3 , Figure 4 and Figure 5 As shown, the processing module 102 includes a common chamber housing 312. The common chamber housing 312 has a central plane 314 that divides the common chamber housing 312 into two parts. In some embodiments, the common chamber housing 312 may include a sleeve housing that includes one or more housing sidewalls 320 that allow unobstructed transmission of radiation from one or more heater arrays, as described below.

[0080] In various embodiments, a first chamber body 308 and a second chamber body 310 are disposed within a common chamber housing 312. In some examples, the first chamber body 308 is positioned within the common chamber housing 312 on a first side (e.g., the left side) of the central plane 314, and the second chamber body 310 is positioned within the common chamber housing 312 on a second side (e.g., the right side) of the central plane 314. Figure 3 and Figure 4 In some examples, the first chamber body 308 and the second chamber body 310 are mirror images of each other about the central plane 314. In such examples, the first chamber body 308 and the second chamber body 310 are laterally positioned adjacent to each other on either side of the central plane 314.

[0081] In various embodiments, the first chamber body 308 includes an interior containing a first processing volume 402, and the second chamber body 310 includes an interior containing a second processing volume 404, such as... Figure 4 As shown. A first processing volume 402 surrounds a first substrate 118 supported on a first substrate support 120, and a second processing volume surrounds a second substrate 122 supported on a second substrate support 124. In various embodiments, the first processing volume 402 and the second processing volume 404 can be independently controlled (e.g., in terms of temperature, processing, and inlet gas flow) to enable independent deposition processes to be performed simultaneously on the first substrate 118 and the second substrate 122. For example, at least the temperature, inlet flow rate, and pressure of the processing gas within the first processing volume 402 and the second processing volume 404 can be independently controlled to enable autonomous deposition processes to be performed simultaneously within the first chamber and the second chamber.

[0082] Independent temperature control of the first processing volume 402 and the second processing volume 404 can be achieved by several aspects of this disclosure. In one aspect, independent temperature control between the first processing volume 402 and the second processing volume 404 can be achieved at least in part by utilizing separate heater arrays for the first chamber body 308 and the second chamber body 310.

[0083] More in detail, Figure 4 and Figure 5 Aspects of separate heater arrays for the first chamber body 308 and the second chamber body 310 are shown, which in turn allow for independent temperature control of the first processing volume 402 and the second processing volume 404, respectively, at least in part.

[0084] Reference Figure 4 The processing module 102 includes a first upper heater array 406 positioned above the first upper wall 430 of the first chamber body 308 and including a first lamp housing 408, in which a first plurality of lamps 414 are disposed. Furthermore, the processing module 102 includes a second upper heater array 410 positioned above the second upper wall 432 of the second chamber body 310 and including a second lamp housing 412, in which a second plurality of lamps 416 are disposed. In some embodiments, each of the first plurality of lamps 414 and each of the second plurality of lamps 416 may be positioned to extend laterally through and above the first upper wall 430 of the first chamber body 308 and the second chamber body 310, respectively. In some embodiments, the first plurality of lamps 414 and the second plurality of lamps 416 are longitudinally spaced above the first upper wall 430 of the first chamber body 308 and the second chamber body 310, so that the first substrate 118 and the second substrate 122, respectively disposed within the first processing volume 402 and the second processing volume 404, can be uniformly heated. As used herein, the longitudinal axis of the main body of the chamber (308 or 310) may refer to an extension / direction that is parallel or substantially parallel to the central plane 314, while the transverse axis of the main body of the chamber may refer to an extension / direction that is perpendicular or substantially perpendicular to the central plane 314.

[0085] In another aspect, the processing module 102 may include a first lower heater array 418 positioned below the first lower wall 434 of the first chamber body 308 and including a third lamp housing 420, in which a plurality of third lamps 426 are arranged. In another aspect, the processing module 102 may include a second lower heater array 422 positioned below the second lower wall 436 of the second chamber body 310 and including a fourth lamp housing 424, in which a plurality of fourth lamps 428 are arranged.

[0086] In some embodiments, each of the plurality of third lamps 426 and each of the plurality of fourth lamps 428 may be positioned to extend longitudinally through and above the first and second upper walls of the first chamber body 308 and the second chamber body 310, respectively. In some embodiments, the plurality of third lamps 426 and the plurality of fourth lamps 428 are longitudinally spaced below the first and second lower walls of the first chamber body 308 and the second chamber body 310.

[0087] The above-mentioned various heater arrays (i.e. Figure 4 Models 406, 410, 418, and 422 can be controlled independently (e.g., via a controller, such as...). Figure 2 The controller 244 enables, at least in part, autonomous temperature control of the first processing volume 402 and the second processing volume 404.

[0088] On the other hand, independent temperature control between the first processing volume 402 and the second processing volume can be achieved at least in part by utilizing a cooling system to provide a coolant fluid flow between the first chamber body 308 and the second chamber body 310, thereby providing at least in part temperature isolation between the first chamber body 308 and the second chamber body 310 and their associated internal processing volumes.

[0089] More details and references Figure 3 and Figure 4 The first chamber body 308 and the second chamber body 310 may be laterally separated by a longitudinal coolant channel 322. In some embodiments, the longitudinal coolant channel 322 is at least partially defined by a channel formed between a portion of the first chamber exterior 324 near the central plane 314 and a portion of the second chamber exterior 332 near the central plane 314. In some embodiments, the longitudinal coolant channel 322 is at least partially defined by a channel formed between the outer surfaces of the first and second chamber bodies near the central plane 314. In some examples, the longitudinal coolant channel 322 may extend longitudinally between the front chamber flanges (336, 338) and the exhaust chamber flanges (340, 342) of the first chamber body 308 and the second chamber body 310. As a non-limiting example, Figure 3 A longitudinal coolant passage 322 is shown extending longitudinally between the first injection chamber flange 336 of the first chamber body 308 and the first exhaust chamber flange 340 of the first chamber body 308 and the second chamber body 310.

[0090] In some embodiments, the longitudinal coolant passage 322 may be defined (or further defined) by one or more diaphragm members configured to allow coolant fluid to flow through the one or more diaphragm members to further independently control the temperature of the first processing volume 402 and the second processing volume 404. In exemplary embodiments, and further reference... Figure 3 and Figure 4 The processing module 102 may also include a first longitudinal diaphragm member 326 and a second longitudinal diaphragm member 328. In such an example, the first longitudinal diaphragm member 326 and the second longitudinal diaphragm member 328 may extend longitudinally between the first and second injection chamber flanges (336, 338) and the first and second exhaust chamber flanges (340, 342) of the first and second chamber bodies (308, 310).

[0091] In various embodiments, longitudinal coolant channels and / or longitudinal diaphragm members may be coupled to a cooling system configured to provide a coolant fluid flow into and through the longitudinal coolant channels. As a non-limiting example, processing module 102 (such as...) Figure 3 and Figure 4 The system (shown) may include a cooling system 344 configured to provide a coolant fluid flow (as shown by coolant fluid flow 346) through longitudinal coolant passages 322 and / or first longitudinal diaphragm member 326 and second longitudinal diaphragm member 328. In some examples, the cooling system 344 may be located near the exhaust chamber flanges (340, 342) and between the first chamber body 308 and the second chamber body 310. In such examples, the cooling system 344 may be configured to longitudinally guide the coolant fluid flow 346 along the longitudinal coolant passages 322 in a flow direction toward the injection chamber flanges (336, 338) of the first chamber body 308 and the second chamber body 310. In various embodiments, the cooling system 344 may include one (or more) blower units configured to longitudinally provide a temperature-controlled (e.g., cooled) airflow through the longitudinal coolant passages 322.

[0092] In various embodiments, the first chamber body and the second chamber body of the dual-chamber processing module of this disclosure include ceramic welded components, which include an integral quartz assembly configured to be housed in a common housing, and each chamber body is further configured to be coupled to an injection flange and an exhaust flange.

[0093] For example, Figure 5 This illustrates the process via processing module 102 (such as...) Figure 3 The diagram shows a cross-sectional view of plane 306 (shown), and illustrates the elements of the first chamber body 308 housed in the common chamber housing 312, as well as the various components and parts of the processing module 102 and their arrangement around the first chamber body, as described in detail below. Although the following detailed description focuses on the first chamber body, it should be understood that the same applies to the second chamber body.

[0094] In various embodiments, processing module 102 includes a first chamber body 308, which includes a first upper wall 430 and a first lower wall 434. The first upper wall 430 extends longitudinally between a first injection chamber flange 336 (e.g., injection end 352) and a longitudinally opposed first exhaust chamber flange 340 (e.g., exhaust end 358). The first lower wall 434 is below and parallel to the first upper wall 430. The first chamber body has a plurality of first external ribs 330 extending laterally around a first chamber exterior of the first chamber body, the plurality of first external ribs 330 being longitudinally spaced apart from each other between the first injection chamber flange 336 and the longitudinally opposed first exhaust chamber flange 340. In some examples, the plurality of external ribs include upper wall ribs and lower ribs, as described in more detail below.

[0095] In various embodiments, processing module 102 ( Figure 5 It includes a first injection flange 354 configured to connect with a first injection chamber flange 336 of the first chamber body 308 and a first exhaust flange 360 ​​configured to connect with a first exhaust chamber flange 340 of the first chamber body 308.

[0096] Figure 6 The diagram shows views of the first chamber body and the second chamber body, with all additional parts and components of the processing module removed.

[0097] In various embodiments, the chamber bodies (308 and / or 310) may have the same geometry. As used herein, the term "identical" should be understood to include the percentage of geometric variation due to defects in the manufacturing process used to construct the chamber body. In such embodiments, the longitudinal length (L) of the chamber body may be the same for the first chamber body 308 and the second chamber body 310. Furthermore, the lateral width (W) of the chamber body may be the same for the first chamber body 308 and the second chamber body 310. Additionally, the height (H) of the chamber body may be the same for the first chamber body 308 and the second chamber body 310.

[0098] In some examples, the first chamber body 308 and the second chamber body 310 have a length (L) to width (W) ratio between 1.0 and 0.2, between 0.8 and 0.3, between 0.7 and 0.4, or between 0.6 and 0.5. In some examples, the first chamber body 308 and the second chamber body 310 have a length (L) to width (W) ratio less than 1.0, less than 0.8, less than 0.7, less than 0.6, less than 0.5, less than 0.4, less than 0.3, or less than 0.2.

[0099] In other examples, the processing module of this disclosure may include chamber bodies (e.g., 308 and / or 310) having geometries different from each other.

[0100] In various embodiments, the first chamber body and the second chamber body of the processing module of this disclosure may include ceramic weldments. In such examples, the first chamber body and the second chamber body may include various structural components integrated as a single unit. In some examples, the ceramic weldment includes an integral element formed from a single ceramic workpiece.

[0101] Figure 7 Structural elements of an exemplary chamber body (e.g., a first chamber body 308 or a second chamber body 310) including a ceramic weldment 700 are shown. Figure 7 As shown, ceramic weldment 700 is shown assembled in a disassembled form.

[0102] In various embodiments, the ceramic weldment 700 includes an upper wall 706. The upper wall 706 includes a single ceramic workpiece 708 formed using a subtractive manufacturing technique. The upper wall 706 includes an upper wall plate portion 710 and an upper wall rib portion 712, which are defined by removing material from a first integral ceramic workpiece.

[0103] like Figure 7 As shown, the first sidewall 714 is connected to the upper wall 706 (as indicated by arrow B). Similarly, the second sidewall 716 is connected to the upper wall 706 (as indicated by arrow C). In some examples, the first sidewall 714 and the second sidewall 716 are connected to the inner surface 718 of the upper wall near the longitudinal edge of the upper wall panel portion 710. The first sidewall 714 and the second sidewall 716 can be welded to the upper wall 706.

[0104] In various embodiments, the ceramic weldment 700 includes an injection chamber flange 720. The injection chamber flange 720 can be coupled to an upper wall 706 (and a first sidewall 714 and a second sidewall 716), as indicated by arrow D. The injection chamber flange 720 can be coupled to the upper wall 706 (and a first sidewall 714 and a second sidewall 716) at an injection end 352 (as shown in the image). Figure 6 (As shown).

[0105] In various embodiments, the ceramic weldment 700 includes an exhaust chamber flange 722. The exhaust chamber flange 722 can be coupled to the upper wall 706 (and the first sidewall 714 and the second sidewall 716), as shown by arrow E. The exhaust chamber flange 722 can be coupled to the upper wall 706 (and the first sidewall 714 and the second sidewall 716) at the exhaust end 358 (as shown by arrow E). Figure 6 (As shown).

[0106] In various embodiments, the ceramic weldment 700 includes a lower wall 726. The lower wall may be coupled to one or more of a first sidewall 714, a second sidewall 716, an injection chamber flange 720, and an exhaust chamber flange 722, as indicated by arrows F and G. Advantageously, the aforementioned dimensional stability (e.g., resistance to deformation associated with localized heating) provided by the subtractive manufacturing technique used to form the upper wall 706 can simplify the formation of welds to the lower wall 726, for example, limiting (or eliminating) the need to remove natural material to achieve registration and / or fill gaps associated with dimensional changes.

[0107] In one aspect, the lower wall 726 comprises a single ceramic workpiece formed using a subtractive manufacturing technique, similar to the upper wall 706. In such an example, the lower wall includes a lower wall plate portion and a lower wall rib portion, which have been defined by removing material from the second integral ceramic workpiece.

[0108] On the other hand, the lower wall 726 includes a non-single ceramic workpiece and may include a lower wall plate 728 and a plurality of lower wall ribs 730. In some examples, the lower wall plate 728 may be coupled to one or more of the first sidewall 714, the second sidewall 716, the injection chamber flange 720, and the exhaust chamber flange 722, as indicated by arrows F and G, and subsequently, a plurality of lower wall ribs 730 may be coupled to the lower surface of the lower wall plate 728, as indicated by arrows H and I. The plurality of lower wall ribs 730 may be sequentially registered to the lower wall plate 728. Registration may be performed at a location below the upper wall rib 712 of the upper wall 706, which serves as a template to inform the manufacturer where any of the plurality of lower wall ribs 730 should be positioned prior to welding.

[0109] As those skilled in the art will understand from this disclosure, due to the aforementioned lateral stiffness of the upper wall 706, using the upper wall 706 as a pass / fail gauge can further limit the variation of the predetermined position within the ceramic weldment 700 relative to each lower wall rib segment 730, thereby also increasing the yield of the manufacturing process used to manufacture the ceramic weldment 700.

[0110] In various embodiments, the channel 732 may be defined within the lower wall 726. In one aspect, drilling may be performed at a location between two (2) longitudinally adjacent upper and lower wall ribs 730, as indicated by arrow J. In another aspect, the channel 732 may be defined within the lower wall 726 as part of a subtractive manufacturing process for forming the lower wall 726.

[0111] As those skilled in the art will understand from this disclosure, the subtractive manufacturing process used to form the lower wall 726 can simplify the formation of the channel 732 and the connection of the tube 738 (or both), because the integral monolithic construction of the upper wall 706 gives the upper wall 706 rigidity, and because there is no weld between the at least multiple upper and lower wall ribs 730 and the upper wall plate portion 710 of the lower wall 726, resulting in dimensional stability.

[0112] Various embodiments of this disclosure relate to delivering process gases to a processing module comprising a first chamber body and a second chamber body. The complexity and cost of apparatus and systems for delivering independent streams of process gases to a dual-chamber processing module having two chamber bodies can be significant. Therefore, one or more embodiments provide apparatus for simplifying the delivery of process gases to a processing module having two chamber bodies.

[0113] As a non-limiting example, a gas delivery system for a dual-chamber processing module may include separate flow controllers and gas delivery lines for feeding all processing gas sources to the first and second chamber bodies. In such an example, the complexity and cost of the system increase exponentially, while also making the manufacturing and repair of the system more complex. Therefore, the various embodiments provided employ shared flow controllers and shared gas delivery lines for certain gas sources, thereby significantly reducing the complexity and cost of the semiconductor processing system.

[0114] Figure 8 A schematic diagram of a portion of a semiconductor processing system 800 according to one or more embodiments is shown. The semiconductor processing system 800 includes a gas delivery system 802, which includes a first gas source 806, a second gas source 808, and an auxiliary gas source 810. Figure 8 As shown, a first gas source 806 is fluidly connected to a first chamber body 308 via a first gas distribution assembly 828, and a second gas source 808 is fluidly connected to a second chamber body 310 via a second gas distribution assembly 830. In contrast, an additional gas source 810 is fluidly connected to both the first chamber body 308 and the second chamber body 310 (via associated gas distribution assemblies) using a gas manifold 816. The gas manifold 816 receives additional gas supplied from the additional gas source 810 (via an inlet conduit 818) and distributes the additional gas to both the first chamber body 308 (via a first outlet conduit 820) and the second chamber body 310 (via a second outlet conduit 822). In such an example, the additional gas source 810 includes a common (e.g., shared) gas conduit to provide additional gas to both the first chamber body 308 and the second chamber body 310, thereby reducing the complexity of the gas delivery system.

[0115] In various embodiments, a first gas conduit 812 is fluidly coupled to a first gas source 806 and a first chamber body 308 (via a first gas distribution assembly 828 and a first injection flange assembly 832). A second gas conduit is fluidly coupled to a second gas source 808 and a second chamber body 310 (via a second gas distribution assembly 830 and a second injection flange assembly 834). A gas manifold 816 includes an inlet conduit 818 for receiving incoming additional gas supplied from an additional gas source 810. The gas manifold 816 includes a first outlet conduit 820 and a second outlet conduit 822, which redistribute the additional gas supplied from the additional gas source 810. The first outlet conduit 820 of the gas manifold 816 is fluidly coupled to the inlet conduit 818 and the first chamber body (via the first gas distribution assembly 828) and supplies additional gas to the first chamber body 308. The second outlet conduit 822 of the gas manifold 816 is fluidly coupled to the inlet conduit 818 and the second chamber body 310 (via the second gas distribution assembly 830) and supplies additional gas to the second chamber body 310.

[0116] In various embodiments, a first flow controller 824 is coupled to a first output conduit 820 and configured to control the additional gas flow rate to the first chamber body 308. A second flow controller is coupled to a second output conduit 822 and configured to control the additional gas flow rate to the second chamber body 310.

[0117] As briefly stated above, the semiconductor processing system 800 includes a first gas distribution assembly 828 and a second gas distribution assembly 830.

[0118] Both the first gas distribution assembly 828 and the second gas distribution assembly 830 can include multiple gas lines (such as...). Figure 8 As shown), each of the multiple gas lines has an associated flow controller ( Figure 8 (Not shown in the image). In some examples, the first gas distribution assembly 828 and the second gas distribution assembly 830 may include a manifold assembly 836. The manifold assembly 836 may be configured to redistribute gas supplied from the first gas source 806, the second gas source 808, and additional gas supplied from the auxiliary gas source 810 among the plurality of gas lines of the gas distribution assemblies (828 / 830).

[0119] The first gas distribution assembly 828 is fluidly coupled to the gas delivery system 802. Additionally, the first gas distribution assembly 828 is fluidly coupled to the first chamber body 308 (via the first injection flange assembly 832). In some embodiments, the first gas distribution assembly 828 is located within the semiconductor processing system 800, upstream of the first chamber body 308 and downstream of the gas delivery system 802.

[0120] The second gas distribution assembly 830 is fluidly coupled to the gas delivery system 802. Furthermore, the second gas distribution assembly 830 is fluidly coupled to the second chamber body 310 (via the second injection flange assembly 834). In some embodiments, the second gas distribution assembly 830 is positioned within the semiconductor processing system 800, upstream of the second chamber body 310 and downstream of the gas delivery system 802.

[0121] As briefly stated above, the semiconductor processing system 800 includes a first injection flange assembly 832 and a second injection flange assembly 834. The first injection flange assembly 832 is configured and arranged to inject gas supplied from a first gas distribution assembly 828 into the interior of a first chamber body 308. The second injection flange assembly 834 is configured and arranged to inject gas supplied from a second gas distribution assembly 830 into the interior of a second chamber body 310.

[0122] In various embodiments, the first injection flange assembly 832 is mechanically coupled to the first chamber body 308 and fluidly coupled to the first gas distribution assembly 828. Similarly, in various embodiments, the second injection flange assembly 834 is mechanically coupled to the second chamber body 310 and fluidly coupled to the second gas distribution assembly 830.

[0123] The first injection flange assembly 832 may include a plurality of internal flow channels (not shown), each of the plurality of internal flow channels having an input fluidly connected to one of a plurality of gas lines fluidly connected to the first gas distribution assembly 828 and an output fluidly in communication with the interior of the first chamber body 308, thereby enabling controlled distribution and injection of gas into the first processing volume 402. Figure 4 )middle.

[0124] Similarly, the second injection flange assembly 834 may include a plurality of internal flow channels (not shown), each of the plurality of internal flow channels having an input fluidly connected to one of a plurality of gas lines fluidly connected to the second gas distribution assembly 830 and an output fluidly in communication with the interior of the second chamber body 310, thereby enabling controlled distribution and injection of gas into the second processing volume 404. Figure 4 )middle.

[0125] Figure 9 A schematic diagram of a portion of a semiconductor processing system 900 according to one or more embodiments is shown. The semiconductor processing system 900 is similar to the semiconductor processing system 800, and elements common to both will be briefly described below.

[0126] The semiconductor processing system 900 includes a first gas distribution assembly 828 and a second gas distribution assembly 830, which are respectively fluidly coupled to a first chamber body and a second chamber body, as previously described for... Figure 8 The semiconductor processing system 800 is described.

[0127] In various embodiments, the gas delivery system 902 includes a precursor source system 904 and an etchant source system 906. The precursor source system 904 includes multiple gas sources, including a first precursor source 908, a second precursor source 910, and a first auxiliary source 912. The etchant source system 906 includes multiple gas sources, including a first etchant source 914, a second etchant source 916, and a second auxiliary source 918. In various embodiments, the precursor source system 904 and / or the second auxiliary source 918 can each supply gas in a single gas form to the first gas distribution assembly 828 and the second gas distribution assembly 830 (and to the associated first chamber body 308 and second chamber body), and to gas in the form of a gas mixture (i.e., composed of two or more different gases) to the first gas distribution assembly 828 and the second gas distribution assembly 830 (and to the associated first chamber body 308 and second chamber body). The supply of a single gas can be utilized when the epitaxial deposition process performed in the semiconductor processing system 900 is sensitive to changes in the flow rate of this particular gas. Accordingly, when the epitaxial deposition process performed in the semiconductor processing system 900 is less sensitive to changes in the flow rate of the gases constituting the gas mixture, the supply of the gas mixture can be utilized.

[0128] In various embodiments, the first precursor source 908 and the second precursor source 910 contain and supply a common chemical compound, i.e., the precursor gas supplied from the first precursor source 908 and the second precursor source 910 is the same. In some embodiments, the first precursor source 908 contains and supplies a single precursor gas (i.e., not a gas mixture), and the second precursor source 910 contains and supplies the same single precursor gas (i.e., not a mixture).

[0129] In various embodiments, the first etchant source 914 and the second etchant source 916 contain and supply a common chemical etchant, meaning that the etchant gas supplied from the first etchant source 914 and the second etchant source 916 is the same. In some embodiments, the first etchant source 914 contains and supplies a single etchant gas (i.e., not a gas mixture), and the second etchant source 916 contains and supplies the same single etchant gas (i.e., not a mixture).

[0130] In various embodiments, the first additional source 912 of the precursor source system 904 and the second additional source 918 of the etchant source system 906 both include two or more gas sources, such as Figure 9 As shown.

[0131] In some examples, two or more gas outputs of the first additional source 912 are coupled to the gas inputs of a mixing manifold 936a, which is configured to mix the incoming gases. The number of gas inputs to the mixing manifold 936a corresponds to the number of gas sources employed in the first additional source 912. As a non-limiting example, Figure 9 The first additional source 912 includes four (4) gas sources having four (4) gas outputs, and the mixing manifold 936a includes four (4) corresponding gas inputs for receiving and mixing gases supplied from each of the four (4) gas sources of the first additional source 912. The mixing manifold 936a mixes the incoming gases and includes a single gas output for supplying the first additional gas, comprising the gas mixture, to downstream components of the gas delivery system 902.

[0132] Similarly, in some examples, two or more gas outputs of the second additional source 918 are coupled to the gas inputs of a mixing manifold 936b, which is configured to mix the incoming gases. The number of gas inputs to the mixing manifold 936b corresponds to the number of gas sources employed in the second additional source 918. As a non-limiting example, Figure 9 The second additional source 918 includes four (4) gas sources having four (4) gas outputs, and the mixing manifold 936b includes four (4) corresponding gas inputs for receiving and mixing gases supplied from each of the four (4) gas sources of the second additional source 918. The mixing manifold 936b mixes the incoming gases and includes a single gas output for supplying the second additional gas, comprising the gas mixture, to downstream components of the gas delivery system 902.

[0133] The gas delivery system 902 includes a first precursor inlet conduit 928 and a first etchant inlet conduit 932, which are fluidly connected to a first gas distribution assembly 828. The first precursor inlet conduit 928 is fluidly connected to a first precursor source 908 and a first auxiliary source 912 via a first manifold 924 and a first flow controller 824. The first etchant inlet conduit 932 is fluidly connected to a first etchant source 914 and a second auxiliary source 918 via a second manifold 926 and a second flow controller 826.

[0134] The gas delivery system 902 includes a second precursor inlet conduit 930 and a second etchant inlet conduit 934, which are fluidly connected to a second gas distribution assembly 830. The second precursor inlet conduit 930 is fluidly connected to a second precursor source 910 and a first auxiliary source 912 via a first manifold 924 and a third flow controller 920. The second etchant inlet conduit 934 is fluidly connected to a second etchant source 916 and a second auxiliary source 918 via a second manifold 926 and a fourth flow controller 922.

[0135] In some embodiments, the first precursor source 908 and the second precursor source 910 contain and supply a precursor gas having a chemical compound comprising an elemental component, which is an elemental compound of the chemical formula of an epitaxial deposition material layer deposited in one or both chamber bodies. In some examples, the precursor gas includes a silicon precursor or a germanium precursor.

[0136] In some embodiments, the first etchant source 914 and the second etchant source 916 contain and supply etchant gases having compounds comprising elemental components that are not elemental compounds of the chemical formula of an epitaxial deposition material layer deposited in one or both chamber bodies. In some examples, the etchant gases include halide etchants (e.g., chlorine, hydrochloric acid, etc.).

[0137] In various embodiments, the provided semiconductor processing system can be configured for dual epitaxial deposition of a material layer comprising a compound material having a chemical formula containing two or more elemental components. As a non-limiting example, the provided semiconductor processing system can be configured for dual epitaxial deposition of an epitaxial silicon-germanium layer comprising a silicon component and a germanium component.

[0138] Figure 10 A portion of a semiconductor processing system 1000 is shown, which is configured for dual epitaxial deposition of a compound material layer, and a portion of a gas delivery system 1002 that can be used in such a system is shown in particular.

[0139] In various embodiments, the gas delivery system 1002 includes a precursor source system 1004 and an etchant source system 1006. A first auxiliary source 912, a second auxiliary source 918, and a first etchant source 914 / second etchant source 916 are connected with... Figure 9 The gas delivery system 902 is configured similarly.

[0140] In some examples, precursor source system 1004 includes a first precursor source 908 and a second precursor source 910. The first precursor source 908 and the second precursor source 910 are configured to supply a first precursor gas 1012. In some embodiments, the first precursor gas 1012 comprises a silicon precursor. In some examples, precursor source system 1004 includes a third precursor source 1008 and a fourth precursor source 1010 configured to supply a second precursor gas 1014. In some embodiments, the second precursor gas 1014 comprises a germanium precursor.

[0141] As a non-limiting example, the gas delivery system 1002 includes a configuration for supplying silicon precursors to a first precursor inlet conduit 928 and a second precursor inlet conduit 930 (see [link]). Figure 9The first precursor source 908 and the second precursor source 910, and the third precursor source 1008 and the fourth precursor source 1010 configured to supply germanium precursor to the first precursor inlet conduit 928 and the second precursor inlet conduit 930, enable the epitaxial deposition of silicon and / or silicon-germanium layers in both the first chamber body 308 and the second chamber body. Figure 9 In some examples, the semiconductor processing system 1000, including the gas delivery system 1002, can be configured for dual epitaxial deposition of a silicon-germanium / silicon superlattice structure comprising multiple repeating layers of epitaxial silicon and epitaxial silicon-germanium. In such an example, the etchant gas 1016 (supply from a first etchant source 914 and a second etchant source 916) may comprise a halide etchant (e.g., hydrochloric acid gas).

[0142] In another example, the first precursor source 908 and the second precursor source 910 may be configured to supply a first precursor gas 1012. In such an example, the first precursor gas 1012 may include a silicon precursor. Additionally, the third precursor source 1008 and the fourth precursor source 1010 may be configured to supply a second precursor gas 1014 comprising a dopant gas. For example, the first precursor source 908 and the second precursor source 910 may supply a silicon precursor, while the third precursor source 1008 and the fourth precursor source 1010 may supply a p-type or n-type dopant, thereby enabling epitaxial deposition of a doped silicon layer in both the first chamber body 308 and the second chamber body 310. In such an example, the semiconductor processing system 1000 including the gas delivery system 1002 may be configured for dual epitaxial deposition of a PMOS or NMOS epitaxial layer comprising a doped epitaxial silicon layer. In such an example, the etchant gas 1016 (supply from the first etchant sources 914 and 916) may include a halide etchant (e.g., hydrochloric acid gas).

[0143] The various embodiments provided also include an exhaust assembly configured to independently control the pressure and rate of exhaust from excess precursors and reaction byproducts from the processing module comprising the first and second chambers. In short, the provided exhaust assembly offers reduced complexity while still enabling independently operable exhaust control of the first and second chambers.

[0144] Reference Figures 11 to 15 The exhaust assembly and its components are shown. The components previously described above are briefly described, while additional components are described in more detail. As used herein with respect to surfaces, "inner" may refer to the surface facing the main chamber, and similarly, "outer" may refer to the surface away from the main chamber.

[0145] In various embodiments, processing module 1100 ( Figure 11The system includes a common chamber housing 312 and a first chamber body 308 and a second chamber body 310. The chamber bodies are disposed within the common chamber housing 312 and are laterally separated by a lateral spacing distance, and are positioned adjacent to each other on either side of a central plane 314. In such an example, the first chamber body 308 includes a first ceramic weldment having a first upper wall and a first lower wall, the first upper wall extending longitudinally between a first injection chamber flange and a longitudinally opposing first exhaust chamber flange, and the first lower wall below and parallel to the first upper wall, as previously described. In such an example, the second chamber body 310 is disposed within the common chamber housing, and the second chamber body includes a second ceramic weldment having a second upper wall and a second lower wall, the second upper wall extending longitudinally between a second injection chamber flange and a longitudinally opposing second exhaust chamber flange, and the second lower wall below and parallel to the second upper wall, as previously described.

[0146] In various embodiments, and referring to Figure 11 and Figure 12 The first chamber body 308 includes a first exhaust chamber flange 1102, and the second chamber body 310 includes a second exhaust chamber flange 1104. The first exhaust chamber flange 1102 and the second exhaust chamber flange 1104 are integrally formed with the first chamber body 308 and the second chamber body 310, respectively. A first exhaust flange 1106 is connected to the first exhaust flange 1106, and a second exhaust flange 1108 is connected to the second exhaust flange 1104. The first and second exhaust flanges can be formed of any suitable material, such as stainless steel or Hastelloy. A first cover plate 1110 is connected to the first exhaust flange 1106, and a second cover plate 1112 is connected to the second exhaust flange 1108.

[0147] Figure 13 and Figure 14 The first and second exhaust flanges (1106, 1108) and the first and second cover plates (1110, 1112) are shown in more detail, along with how they are assembled. For example, Figure 13 An exploded view of the components of the exhaust assembly is shown when viewed toward the first exhaust chamber flange 1102 of the first chamber body 308. Figure 14 An exploded view of the components of the exhaust assembly is shown when viewed away from the first exhaust chamber flange 1102, which is away from the first chamber body 308. In various embodiments, the first chamber body, exhaust flange, cover plate, etc., are structurally identical or substantially similar to the second chamber body, exhaust flange, cover plate, etc., and are assembled in the same or substantially similar manner. Therefore, the following description of the first exhaust assembly is similarly applicable to the second exhaust assembly.

[0148] In various embodiments, and referring to Figure 13 and Figure 14The first exhaust flange 1106 includes a first inner sealing surface 1402 configured to form a seal (e.g., a vacuum seal) with the first exhaust chamber flange 1102. To form a seal between the first exhaust flange 1106 and the first inner sealing surface 1402, the first inner sealing surface 1402 includes an inner recess 1404 configured and arranged to receive a sealing member (e.g., an O-ring, etc.), and the first exhaust chamber flange 1102 includes a first chamber recess 1308 configured and arranged to receive a sealing member. The first cover plate 1110 includes a first plate sealing surface 1406 configured to form a seal with the first outer sealing surface 1304 of the first exhaust flange 1106. To form a seal between the first cover plate 1110 and the first inner sealing surface 1402, the first plate sealing surface 1406 includes a first cover recess 1408 configured and arranged to receive a sealing member, and the first outer sealing surface 1304 includes an outer recess 1306 configured and arranged to receive a sealing member.

[0149] In various embodiments, a series of pressure cylinders are used to achieve the connection and formation of a seal (i.e., a vacuum seal) between the first exhaust chamber flange 1102 and the first exhaust flange 1106, and between the second exhaust chamber flange 1104 and the second exhaust flange 1108.

[0150] In some embodiments, to maintain the necessary compressive force between the first exhaust flange 1106 and the first chamber body 308, the processing module 1100 is equipped with a first pressure cylinder 1114 and a second pressure cylinder 1116. These cylinders are connected to the common chamber housing 312 and respectively include a first piston 1122 and a second piston 1124. These pistons are coupled to the first exhaust flange 1106 and configured to apply compressive force between the first exhaust flange 1106 and the first exhaust chamber flange 1102, thereby maintaining a seal (and internal vacuum) within the first chamber body 308.

[0151] Similarly, in order to maintain the necessary compressive force between the second exhaust flange 1108 and the second chamber body 310, the processing module 1100 is equipped with a third pressure cylinder 1118 and a fourth pressure cylinder 1120. These cylinders are connected to the common chamber housing and include a third piston 1126 and a fourth piston 1128, respectively. These pistons are coupled to the second exhaust flange 1108 and configured to apply compressive force between the second exhaust flange 1108 and the second exhaust chamber flange 1102, thereby maintaining a seal (and internal vacuum) within the second chamber body 310.

[0152] In various embodiments, the first and second exhaust flanges include flange member 1310 and exhaust port member 1312.

[0153] In various embodiments, a first pressure cylinder 1114 is attached to a first side of a first exhaust flange in a first vertical position, while a second pressure cylinder is attached to a second side of the first exhaust flange in a second vertical position different from the first vertical position. Similarly, a third pressure cylinder is attached to a first side of a second exhaust flange in a first vertical position, and a fourth pressure cylinder is attached to a second side of a second exhaust flange in a second vertical position different from the first vertical position.

[0154] As a non-restrictive example, Figure 15 The first and second exhaust flanges (1106, 1108) are shown, with their respective pressure cylinders in place. Note that the pressure cylinder housing is omitted. Figure 15 As shown, the first pressure cylinder 1114 is attached to the first side 1136a of the first exhaust flange 1106 via the first connector 1130, and the second pressure cylinder 1116 is attached to the second side 1138a of the first exhaust flange 1106 via the second connector 1132. Similarly, the third pressure cylinder 1118 is attached to the first side 1136b of the second exhaust flange 1108 via the third first connector 1130, and the third pressure cylinder 1118 is attached to the second side 1138b of the second exhaust flange 1108 via the fourth connector 1136.

[0155] In some embodiments, the first connecting member 1130 is positioned near the base of the flange member 1310 of the first exhaust flange 1106, and the second connecting member is positioned near the top of the flange member 1310 of the first exhaust flange, such as... Figure 15 As shown. Similarly, the third connector 1134 can be positioned near the base of the flange member 1310 of the second exhaust flange 1108, while the fourth connector 1136 can be positioned near the top of the flange member 1310 of the second exhaust flange 1108. In other embodiments, the positions of the connectors can be mirrored, such that the first connector 1130 and the third connector 1134 are positioned at the top of the flange member 1310, while the second connector 1132 and the fourth connector 1136 are positioned at the base of the flange member 1310.

[0156] The positioning of the pressure cylinder and its associated connecting parts at the aforementioned locations can facilitate a compact form of the exhaust assembly and the corresponding processing module 1100. For example, as Figure 12 As shown, the second pressure cylinder 1116 and the third pressure cylinder 1118 can be positioned vertically relative to each other, thereby reducing the space required to accommodate the pressure cylinders.

[0157] In various embodiments, the vacuum assembly is coupled to the exhaust assembly of the processing module, specifically to a first exhaust port and a second exhaust port. For example, the vacuum assembly may be configured to provide independent control of the exhaust pressure from each of the first and second chamber bodies.

[0158] The vacuum assembly is designed to effectively manage gas removal and maintain the desired pressure level within the chamber body.

[0159] Return to reference Figure 11 The vacuum assembly 1140 may include a common vacuum source 1142, which can serve as the primary mechanism for generating vacuum conditions within the first chamber body 308 and the second chamber body 310. The common vacuum source 1142 is connected to both the first and second chamber bodies via a dedicated exhaust duct.

[0160] In various embodiments, a first exhaust duct 1148 is coupled to a first exhaust port 1144 of the first chamber body 308 and extends to a common vacuum source 1142. The first exhaust duct 1148 facilitates the removal of gas from the first chamber body, ensuring a stable internal environment conducive to the epitaxial deposition process. To regulate the pressure within the first chamber body 308, a first pressure control valve 1152 is operatively coupled to the first exhaust duct 1148. The first pressure control valve 1152 allows for precise control of the pressure level, ensuring that the desired vacuum conditions are maintained within the first chamber body. Similarly, a second exhaust duct 1150 is coupled to a second exhaust port 1146 of the second chamber body 310 and extends to the common vacuum source 1142. The second exhaust duct 1150 performs the same function as the first exhaust duct, but for the second chamber body. The second exhaust duct 1150 ensures effective gas removal and maintains a stable internal environment. A second pressure control valve 1154 is operatively coupled to the second exhaust duct 1150, thereby providing the same level of precise pressure control as the first valve. This ensures that the vacuum conditions within the second chamber body are also maintained at the desired level.

[0161] The integration of these components within the vacuum assembly (1140) allows for the simultaneous and independent management of gas and pressure levels in both chambers. The common vacuum source 1142, along with the first and second exhaust ducts and their respective pressure control valves, ensures efficient and effective operation of the processing module (1100), supporting the simultaneous epitaxial deposition of material layers.

[0162] In various embodiments, the provided processing module includes an independently controllable lifting mechanism for raising and lowering an upper lamp housing containing multiple heating lamps for heating the interiors of a first chamber body and a second chamber body. By independently controlling the upper lamp housing, the multiple lamps can be more easily accessed when maintenance and / or lamp replacement is required.

[0163] In one or more embodiments of this disclosure, the processing module includes: a support frame comprising a vertical frame and a horizontal frame; a common chamber shell supported by the support frame; and first and second chamber bodies disposed within the common chamber shell. Each chamber body includes a ceramic weldment having an upper wall and a lower wall. The module also includes a first and second lamp housing for heating the interior of the chamber body, and first and second lifting mechanisms for independently raising and lowering the lamp housings.

[0164] Figure 16 and Figure 17 One or more embodiments of the lifting mechanism are shown. Figure 16 A schematic diagram of the processing module 1600 with both lamp housings in the off position is shown. Figure 17 A schematic diagram of a processing module 1600 is shown with the first lamp housing in the open position and the second lamp housing in the closed position.

[0165] In various embodiments, the processing module 1600 includes a support frame 1602, which includes a vertical frame 1604 and a horizontal frame 1606. The vertical frame 1604 can provide structural support, while the horizontal frame 1606 can provide stability and alignment for components housed within the processing module.

[0166] The common chamber housing 312 is supported by a support frame 1602. This housing surrounds a first chamber body 308 and a second chamber body 310, the chamber bodies being positioned adjacent to each other on either side of a central plane 314. Each chamber body includes a ceramic welded member having an upper wall and a lower wall. The upper wall extends longitudinally between an injection chamber flange and a longitudinally opposing exhaust chamber flange, while the lower wall is positioned below and parallel to the upper wall, with movable lifting elements as previously described.

[0167] The first lamp housing 1614 and the second lamp housing 1616 are configured to heat the interiors of the first chamber body 308 and the second chamber body 310, respectively. The first lamp housing 1614 and the second lamp housing 1616 are positioned on either side of the central plane 314 and each includes a housing base 1618, which is hingedly connected to the horizontal frame 1606 via a hinge mechanism 1620. A first lifting coupling 1636 is positioned on the upper surface of the housing base 1618.

[0168] The first lifting mechanism 1622 and the second lifting mechanism 1624 are operatively connected to the vertical frame 1604. Each lifting mechanism includes a movable lifting element 1626 having a second lifting coupling 1638, a drive mechanism 1628 configured to raise and lower the movable lifting element 1626 around the vertical frame 1604, and a lifting arm 1630 having a first pivot end 1632 connected to the first lifting coupling 1636 and a second pivot end 1634 connected to the second lifting coupling 1638. These lifting mechanisms are designed to independently raise and lower the first lamp housing 1614 and the second lamp housing 1616 between a closed position and an open position.

[0169] The support frame 1602 is constructed of durable materials to ensure stability and lifespan. The vertical frame 1604 is designed to bear the weight and operational stress of the common room housing 312 and the lamp housings (1614, 1616). The horizontal frame 1606 provides additional support and alignment, ensuring that the main body of the housing and the lamp housing remain properly positioned during operation.

[0170] In various embodiments, the first lifting mechanism 1622 and the second lifting mechanism 1624 also include a position sensor 1640 configured to monitor the position of the first lamp housing and the second lamp housing during raising and lowering operations. This position sensor 1640 ensures accurate and precise control of the lamp housing, thereby enhancing the overall performance of the processing module.

[0171] In various embodiments, the drive mechanism 1628 includes a smart motor configured to control and regulate the travel speed of the first lamp housing 1614 and the second lamp housing 1616 during raising and lowering operations. The smart motor is operatively connected to the position sensor 1640 and configured to reduce the travel speed of the first lamp housing 1614 and the second lamp housing 1616 during lowering operations when they approach the first chamber body 308 and the second chamber body 310. These features prevent movement of the lamp housings during raising and lowering operations from displacing components (e.g., support substrates) within the chamber bodies, and also prevent any sudden movement that could disrupt the deposition process.

[0172] Additionally, the intelligent motor can be configured to reduce the travel speed of the first lamp housing 1614 and the second lamp housing 1616 when approaching the vertical frame 1604 during lifting operations. This ensures smooth and controlled movement of the lamp housings, thereby reducing the risk of mechanical failure or misalignment.

[0173] In various embodiments, the first lifting mechanism 1622 and the second lifting mechanism 1624 are connected to the vertical frame 1604 via a pivot mechanism 1642. This pivot mechanism 1642 is configured to allow the first lamp housing 1614 and the second lamp housing 1616 to rotate about the vertical frame 1604 when in the open position. The pivot mechanism 1642 is positioned about the vertical frame 1604 toward the exhaust chamber flange (see...). Figure 7 Rotate the first lamp housing 1614 and the second lamp housing 1616 to make it possible to access the first plurality of lamps disposed in the first lamp housing 1614 and the second plurality of lamps disposed in the second lamp housing 1616.

[0174] Figure 17 The processing module 1600 is shown, with the first lamp housing 1614 in the open position and the second lamp housing 1616 in the closed position. Raising the first lamp housing 1614 to the open position can be achieved by engaging the drive mechanism 1628, thereby vertically raising the movable lifting element 1626 relative to the vertical frame.

[0175] In various embodiments, the horizontal frame 1606 also includes an operable sliding mechanism 1644 configured to allow the first and second lamp housings to move away from the exhaust flange when in the open position. This feature facilitates lamp maintenance and replacement, thereby enhancing the overall maintainability of the processing module.

[0176] In another embodiment, the first lifting mechanism 1622 is configured to operably move the first plurality of lights (e.g., lamps) between a closed position and an open position. Figure 4 (414), in the closed position, the first plurality of lights are located on the upper wall of the main body of the first chamber (e.g., Figure 4 Above 430), in the open position, the first multiple lights (e.g.) Figure 4 (414) is located near the vertical frame 1604. Similarly, the second lifting mechanism 1624 is configured to operably move a second plurality of lights (e.g., ...) between a closed position and an open position. Figure 4 (416), in the closed position, the second plurality of lights are located on the upper wall of the second chamber body (e.g., Figure 4 Above 430), in the open position, the second set of lights is close to the vertical frame 1604.

[0177] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be embodied or implemented in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0178] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings. The invention is not limited to any particular embodiment disclosed.

Claims

1. A processing module configured to perform simultaneous epitaxial deposition of a material layer, the processing module comprising: Public room shell; The first chamber body is disposed in the common chamber shell. The first chamber body includes a first ceramic weldment having a first upper wall and a first lower wall. The first upper wall extends longitudinally between a first injection chamber flange and a longitudinally opposite first exhaust chamber flange. The first lower wall is below the first upper wall and parallel to the first upper wall. The first exhaust flange includes a first inner sealing surface and a first outer sealing surface, the first inner sealing surface being configured to form a seal with the first exhaust chamber flange; A first cover plate includes a first plate sealing surface configured to form a seal with a first outer sealing surface of a first vent flange; and A first pressure cylinder and a second pressure cylinder are connected to a common chamber housing and include a first piston and a second piston. The first piston and the second piston are coupled to a first exhaust flange and configured to apply a compressive force between the first exhaust flange and a first injection chamber flange. The second chamber body is disposed in the common chamber shell. The second chamber body includes a second ceramic weldment having a second upper wall and a second lower wall. The second upper wall extends longitudinally between the second injection chamber flange and the longitudinally opposite second exhaust chamber flange. The second lower wall is below the second upper wall and parallel to the second upper wall. The second exhaust flange includes a second inner sealing surface and a second outer sealing surface, the second inner sealing surface being configured to form a seal with the second exhaust chamber flange; The second cover plate includes a second plate sealing surface configured to form a seal with the second outer sealing surface of the second vent flange; and A third and a fourth pressure cylinder are connected to the common chamber housing and include a third and a fourth piston. The third and fourth pistons are coupled to the second exhaust flange and configured to apply a compressive force between the second exhaust flange and the second exhaust chamber flange. The first chamber and the second chamber are laterally separated by a horizontal distance and are positioned adjacent to each other on either side of the central plane.

2. The processing module according to claim 1, wherein, The first pressure cylinder is attached to the first side of the first exhaust flange at a first vertical position, and the second pressure cylinder is attached to the second side of the first exhaust flange at a second vertical position different from the first vertical position.

3. The processing module according to claim 2, wherein, The third pressure cylinder is attached to the first side of the second exhaust flange at the first vertical position, and the fourth pressure cylinder is attached to the second side of the second exhaust flange at a second vertical position different from the first vertical position.

4. The processing module according to claim 3, wherein, The second pressure cylinder is located above the third pressure cylinder.

5. The processing module according to claim 1, wherein, The first chamber body has a first chamber exterior and a first chamber interior, the first chamber exterior including a plurality of first external ribs extending laterally around the first chamber exterior, the first chamber interior surrounding a first processing volume, and wherein the second chamber body has a second chamber exterior and a second chamber interior, the second chamber exterior including a plurality of second external ribs extending laterally around the second chamber exterior, the second chamber interior surrounding a second processing volume.

6. The processing module according to claim 5, wherein, The first upper wall and the second upper wall include an upper wall plate portion and an upper wall rib portion, the upper wall plate portion and the upper wall rib portion defining an unwelded ribbed area of ​​the upper wall formed from a first single quartz workpiece using a subtractive manufacturing technique, thereby forming the upper portion of the plurality of first outer ribs and the plurality of second outer ribs.

7. The processing module according to claim 6, wherein, The first lower wall and the second lower wall include a lower wall plate portion and a lower wall rib portion, the lower wall plate portion and the lower wall rib portion defining an unwelded ribbed area of ​​the lower wall formed from a second single quartz workpiece using a subtractive manufacturing technique, and forming the lower portions of the plurality of first outer ribs and the plurality of second outer ribs.

8. The processing module according to claim 7 further includes a longitudinal coolant channel disposed between the first chamber body and the second chamber body, the longitudinal coolant channel being at least partially defined by the lateral separation distance between the first chamber body and the second chamber body.

9. The processing module of claim 8 further includes a cooling system coupled to the longitudinal coolant passage, the cooling system being configured to provide a coolant fluid flow through the longitudinal coolant passage, thereby providing at least partial temperature control of the first exhaust flange and the second exhaust flange.

10. The processing module according to claim 9, wherein, The longitudinal coolant channel further includes a first longitudinal diaphragm member connected to the first chamber body and a second longitudinal diaphragm member connected to the second chamber body; The first longitudinal diaphragm member and the second longitudinal diaphragm member are laterally positioned adjacent to each other on either side of the central plane; and The first longitudinal diaphragm member and the second longitudinal diaphragm member form a heat exchanger assembly configured to receive a coolant fluid flow from the cooling system.

11. A semiconductor processing system, comprising: Wafer transfer module; A gate valve assembly, which is connected to the wafer transfer module; The processing module, which is connected to the gate valve assembly, includes: Public room shell; The first chamber body is disposed in the common chamber shell. The first chamber body includes a first ceramic weldment having a first upper wall and a first lower wall. The first upper wall extends longitudinally between a first injection chamber flange and a longitudinally opposite first exhaust chamber flange. The first lower wall is below the first upper wall and parallel to the first upper wall. A first exhaust flange is connected to a first injection chamber flange, and the first exhaust flange includes a first exhaust port; The second chamber body includes a second ceramic weldment having a second upper wall and a second lower wall. The second upper wall extends longitudinally between a second injection chamber flange and a longitudinally opposite second exhaust chamber flange. The second lower wall is below the second upper wall and parallel to the second upper wall. A second exhaust flange, connected to a second injection chamber flange, the second exhaust flange including a second exhaust port; and A vacuum assembly, connected to a first exhaust port and a second exhaust port, is configured to provide independent control of the exhaust pressure from each of the first chamber body and the second chamber body.

12. The semiconductor processing system according to claim 11, wherein, The vacuum assembly also includes: Public vacuum source; The first exhaust duct is connected to the first exhaust port and a common vacuum source; A first pressure control valve is operably connected to a first exhaust duct; A second exhaust duct, which connects to the second exhaust port and a common vacuum source; and A second pressure control valve is operably connected to a second exhaust duct.

13. The semiconductor processing system according to claim 12, wherein, The first exhaust flange further includes a first inner sealing surface and a first outer sealing surface, the first inner sealing surface being configured to form a seal with the first exhaust chamber flange.

14. The semiconductor processing system according to claim 13, wherein, The processing module further includes a first cover plate, which includes a first plate sealing surface configured to form a seal with a first outer sealing surface of the first exhaust flange.

15. The semiconductor processing system according to claim 14, wherein, The processing module further includes a first pressure cylinder and a second pressure cylinder, which are connected to the common chamber housing and include a first piston and a second piston. The first piston and the second piston are coupled to the first exhaust flange and configured to apply a compressive force between the first exhaust flange and the first injection chamber flange.

16. The semiconductor processing system according to claim 12, wherein, The second exhaust flange also includes a second inner sealing surface and a second outer sealing surface, the second inner sealing surface being configured to form a seal with the second exhaust chamber flange.

17. The semiconductor processing system according to claim 16, wherein, The processing module further includes a second cover plate, which includes a second plate sealing surface configured to form a seal with the outer sealing surface of the second exhaust flange.

18. The semiconductor processing system according to claim 17, wherein, The processing module further includes a third pressure cylinder and a fourth pressure cylinder, which are connected to the common chamber housing and include a third piston and a fourth piston. The third piston and the fourth piston are coupled to the second exhaust flange and configured to apply a compressive force between the second exhaust flange and the second exhaust chamber flange.

19. The semiconductor processing system according to claim 11, wherein, The semiconductor processing system includes a cluster-type platform.

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