A battery piece processing technology

Abstract

The application relates to the technical field of photovoltaic cells, in particular to a cell piece processing technology, which comprises the following steps: providing a cell piece body as a piece to be processed; slotting the cell piece body to form a slotted area, so that a substrate in the slotted area is exposed; arranging a plurality of metal bodies on the substrate, at least two metal bodies having a spacing d, and the spacing d>0; and forming an alloy layer of the substrate-metal body between the metal body and the substrate. The technical problem of low cell piece quality is solved, and the technical effect of improving the cell piece quality is achieved.

Description

Technical Field

[0001] This application relates to the field of photovoltaic cell technology, and in particular to a cell processing technology. Background Technology

[0002] A photovoltaic (PV) cell is a highly efficient semiconductor device that directly converts light energy into electrical energy; its core principle is based on the photoelectric effect. In a PV cell, the grid lines play a crucial role, responsible for collecting and conducting the current generated by the photoelectric effect. To ensure good conductivity of the grid lines and effectively conduct current from the cell to the external circuitry, grid line metallization is a necessary step.

[0003] In existing technologies, grid metallization can be achieved by electroplating, which is widely used due to its high efficiency, low cost and ease of control. Generally, metal is electroplated directly onto the silicon substrate of the solar cell to form an alloy layer between the silicon substrate and the metal, thereby achieving metal electroplating on the silicon substrate. However, electroplating metal on the solar cell often causes defects in the silicon substrate, resulting in lower solar cell quality.

[0004] Therefore, the technical problem with existing technology is that the quality of the solar cells is relatively low. Summary of the Invention

[0005] This application provides a battery cell processing technology that solves the technical problem of low battery cell quality and achieves the technical effect of improving battery cell quality.

[0006] On the one hand, the battery cell processing technology, battery cell structure, and battery cell provided in this application adopt the following technical solution:

[0007] A battery cell processing technology includes: providing a battery cell body as a workpiece to be processed; forming a grooved area by slotting on the battery cell body to expose a substrate within the grooved area; disposing a plurality of metal bodies on the substrate, with at least two of the metal bodies having a spacing d between them, the spacing d > 0; and forming a substrate-metal body alloy layer between the metal bodies and the substrate.

[0008] Preferably, after "forming an alloy layer of substrate-metal body between the metal body and the substrate", the method further includes: providing a metal plating layer on the substrate within the slotted area, so that the metal plating layer is connected to or integrally formed with the metal body.

[0009] Preferably, the step of “forming a substrate-metal alloy layer between the metal body and the substrate” includes: sintering the substrate and the metal body.

[0010] Preferably, the sintering temperature is between 200°C and 900°C.

[0011] Preferably, the metal body is disposed of by electroplating, photo-induced plating, or chemical plating.

[0012] Preferably, the metal body is provided in the following manner: multiple granular metal bodies are provided and disposed on the substrate in the slotted area.

[0013] Secondly, the battery cell structure provided in this application adopts the following technical solution:

[0014] A battery cell structure includes: a battery cell body having a slotted area, wherein a substrate located within the slotted area is exposed; a metal body disposed on the substrate; the metal body having a plurality of metal bodies, wherein at least two of the metal bodies are spaced apart by a distance d, wherein the distance d > 0; and a substrate-metal body alloy layer is formed between the metal body and the substrate.

[0015] Preferably, the substrate is silicon or TCO.

[0016] Preferably, the metal body includes nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or titanium-aluminum alloy.

[0017] Preferably, the sum of the contact areas between the metal body and the substrate accounts for 1% to 90% of the grooved area.

[0018] Preferably, the thickness of the alloy layer is between 1 nm and 1000 nm.

[0019] Thirdly, the battery cell provided in this application adopts the following technical solution:

[0020] A battery cell having the aforementioned battery cell structure; further comprising: a metal plating layer disposed on the substrate within the slotted area, wherein the metal plating layer is connected to or integrally formed with the metal body.

[0021] In summary, this application includes at least one of the following beneficial technical effects:

[0022] This application forms a dispersed alloy layer on the substrate in the trench area, and then performs metallization on the alloy layer to improve the metallization adhesion; it effectively protects the reaction depth of the substrate, can effectively reduce passivation loss, and improve the quality and efficiency of the solar cell. Attached Figure Description

[0023] Figure 1 This is a top view of the metal body of the battery cell described in this application;

[0024] Figure 2 This is a side view of the metal body of the battery cell described in this application;

[0025] Figure 3 This is a first schematic diagram of the formation of an alloy layer on the battery cell described in this application;

[0026] Figure 4 This is a second schematic diagram of the formation of an alloy layer on the battery cell described in this application;

[0027] Figure 5 This is a third schematic diagram of the formation of an alloy layer on the battery cell described in this application;

[0028] Figure 6 This is a fourth schematic diagram of the formation of an alloy layer on the battery cell described in this application;

[0029] Figure 7 This is a schematic diagram of the metal plating layer of the battery cell described in this application.

[0030] Explanation of reference numerals in the attached figures: 100, substrate; 200, metal body; 300, alloy layer; 400, metal plating layer; 500, grooved area; 600, solar cell body. Detailed Implementation

[0031] The serial numbers assigned to components in this document, such as "first" and "second," are used solely to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages). It should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are used solely for the convenience of describing this application and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0032] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0033] This application provides a battery cell processing technology, battery cell structure, and battery cell, which solves the technical problem of low battery cell quality and achieves the technical effect of improving battery cell quality.

[0034] To better understand the above technical solutions, a detailed description of the technical solutions will be provided below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit the scope of this application.

[0035] This application proposes a cell processing technology for manufacturing high-quality cells, including:

[0036] A battery cell body 600 is provided as a workpiece to be processed. A groove is made in the battery cell body 600 to form a grooved region 500 so that the substrate 100 in the grooved region 500 is exposed.

[0037] Multiple metal bodies 200 are disposed on the substrate 100 within the slotted area 500, and the metal bodies 200 are dispersed among each other;

[0038] An alloy layer 300 of substrate 100-metal body 200 is formed between metal body 200 and substrate 100.

[0039] Among them, the cell body 600 refers to the cell that has not yet been metallized, and the cell body 600 has a substrate and a protective film.

[0040] like Figure 1 As shown, multiple metal bodies 200 are provided, and the multiple metal bodies 200 are dispersedly arranged. Dispersed arrangement specifically means that at least one metal body 200 has a spacing d between them, where d > 0. It can be understood that the spacing between the metal bodies 200 refers to the distance between the edge of one metal body 200 and the edge of another metal body 200. In other words, when two metal bodies 200 are placed on the substrate 100, the two metal bodies 200 do not overlap; when more than two metal bodies 200 are provided on the substrate 100, at least two metal bodies do not overlap. Here, overlap refers to partial overlap and complete overlap. In one embodiment, the metal bodies are uniformly distributed on the substrate 100 in the slotted region 500.

[0041] It should be noted that, as Figure 1 , 2As shown, the metal body 200 is located in the grooved region 500 of the substrate 100. The grooved region 500 refers to the location where the grid lines are formed. Furthermore, the solar cell has a protective film, which needs to be grooved to expose the silicon substrate 100. Generally, the grooving process is carried out by laser grooving or other methods. After the grooving process, the upper grooved region 500 is formed on the cell body 600. By performing metallization processing in the grooved region 500, metallized electrodes (forming grid lines) can be prepared to form a tight and efficient ohmic contact.

[0042] In one embodiment, the material of the metal body 200 may be nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or titanium-aluminum alloy.

[0043] In one embodiment, the electroplating method of the metal body 200 may be electroplating, photo-induced plating, or chemical plating.

[0044] In one embodiment, the contact shape between the metal body 200 and the substrate 100 is circular, square, elliptical, or irregular; irregular shape refers to a shape with irregular edges; the contact shape can be adjusted by different arrangements of the metal body 200.

[0045] In one embodiment, within the slotted region 500, the sum of the contact areas between the metal body 200 and the substrate 100 accounts for between 1% and 99% of the slotted region 500. Preferably, the percentage can be 1%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 99%.

[0046] In another embodiment, the metal body 200 can also be disposed directly on the substrate 100 by means of granular metal body 200; specifically, granular metal body 200 is uniformly spread on the substrate 100 in the grooved area 500, wherein the metal body 200 can be nano-sized or micro-sized particles.

[0047] Furthermore, after the metal body 200 is arranged, the metal body 200 and the substrate 100 need to be sintered to form a substrate 100-metal body 200 alloy between the substrate 100 and the metal body 200. The sintering method includes, but is not limited to, thermal sintering, laser sintering, and other sintering methods.

[0048] In one embodiment, to facilitate the formation of a substrate 100-metal body 200 alloy between the substrate 100 and the metal body 200, it is worth noting that sintering the substrate 100 and the metal body 200 is to form an ohmic contact between them and improve adhesion performance. Preferably, the substrate 100 is a silicon substrate 100, and the metal body 200 is selected to facilitate alloy formation. For example, the metal body 200 can be nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, TiV, or a titanium-aluminum alloy. For example, if the metal body 200 is nickel (Ni), a silicon-nickel alloy layer is formed between the silicon substrate 100 and the nickel after sintering. In other embodiments, the substrate 100 can also be a TCO (transparent conductive film), and the metal body 200 is selected to facilitate alloy formation. For example, the metal body 200 can be nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or a titanium-aluminum alloy.

[0049] Sintering temperature: 200~900℃, preferably 200℃, 300℃, 400℃, 500℃, 600℃, 700℃, 800℃, 900℃;

[0050] Sintering time: less than or equal to 60 min, preferably 2 s, 5 s, 20 s, 60 s, 2 min, 5 min, 20 min, 40 min, or 60 min.

[0051] The thickness of alloy layer 300 is between 1nm and 1000nm; this is understandable, such as... Figure 3-6 As shown, when the metal body 200 is electroplated thicker, only a portion of the metal body 200 and the substrate 100 are sintered to form the alloy layer 300. In this case, the metal body 200 refers to the excess metal and the alloy layer 300. When the metal body 200 is thinner, after the metal body 200 and the substrate 100 are sintered, the entire metal body 200 and the substrate 100 are sintered to form the alloy layer 300. In this case, the metal body 200 refers to the alloy layer 300.

[0052] The distribution shape of the alloy layer 300 is the contact shape between the metal body 200 and the substrate 100, and can be circular, square, elliptical, or irregular in shape. Furthermore, as... Figure 3-6 As shown, based on different sintering methods and temperatures, the alloy layer 300 formed by the silicon substrate 100 and the metal body 200 is located on the upper surface of the substrate 100 or penetrates into the substrate 100; for example... Figure 3 As shown, the entire metal body 200 forms an alloy layer 300 and is located on the upper surface of the substrate 100; as Figure 4 As shown, a portion of the metal body 200 forms an alloy layer 300 and is located on the upper surface of the substrate 100; as Figure 5As shown, a portion of the metal body 200 forms an alloy layer 300, and the alloy layer 300 penetrates into the interior of the substrate 100; as Figure 6 As shown, a portion of the metal body 200 forms an alloy layer 300, and a portion of the alloy layer 300 penetrates into the interior of the substrate 100.

[0053] It is understood that at least two metal bodies 200 are provided. When there are two metal bodies 200, alloy layers 300 are formed at two locations on the substrate 100, which differs from the full-surface alloy layer 300 of the prior art. Preferably, a large number of metal bodies 200 are provided, such as several, dozens, hundreds, or even thousands, with each metal body 200 and the substrate 100 forming an alloy layer 300. This application does not limit the size of the metal bodies 200, and the size and shape of the metal bodies 200 can be adjusted based on actual needs.

[0054] Furthermore, such as Figure 7 As shown, the battery cell processing technology further includes: after obtaining the alloy layer 300 of the substrate 100-metal body 200, a metal plating layer 400 is provided on the substrate 100 in the slotted area 500, the metal plating layer 400 and the metal body 200 are connected or integrally formed, and the metal plating layer 400 is attached to the substrate 100 so that the substrate 100 completes the metallization process.

[0055] In one embodiment, the metal plating layer 400 is made of nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or titanium-aluminum alloy.

[0056] In one embodiment, the metal plating layer 400 is plated by electroplating, photo-induced plating, or chemical plating.

[0057] In one embodiment, the thickness of the metal plating layer 400 is between 1 μm and 50 μm.

[0058] In one embodiment, the metal plating layer 400 and the metal body 200 can be connected or integrally formed by electroplating, so that the metal plating layer 400 and the substrate 100 are connected through the alloy layer 300. During the electroplating process, the metal plating layer 400 gradually covers the metal body 200 and forms a tight bond with the metal body 200 through electroplating, that is, the metal body 200 and the metal plating layer 400 are connected or integrally formed. At the same time, other parts of the metal plating layer 400 form a physical attachment with the substrate 100, ensuring the stability and reliability of the entire structure. In this way, good electrical contact is guaranteed, and performance degradation due to material differences and peeling problems during long-term use are avoided.

[0059] It is worth noting that the cell fabrication process provided in this application is applicable to, but is not limited to, BC cells, TOPCON cells, and HJT cells.

[0060] The above-mentioned battery cell processing technology will be further explained through the following specific embodiments:

[0061] Example 1:

[0062] A groove is cut into the cell body 100 to form a grooved region 500, exposing the silicon substrate 100. A metal body 200 (nickel) is deposited on the substrate 100 in the grooved region 500 by electroplating. The sum of the contact areas between the metal body 200 and the substrate accounts for 10% of the grooved region 500. The silicon substrate 100 and the metal body 200 are thermally sintered at a temperature of 400°C for 10 seconds to form an alloy layer 300 with a thickness of 50 nm between the substrate 100 and the metal body 200.

[0063] Example 2:

[0064] A groove is cut into the cell body 100 to form a grooved region 500, exposing the silicon substrate 100. A metal body 200 (cobalt) is deposited on the substrate 100 in the grooved region 500 by electroplating. The sum of the contact areas between the metal body 200 and the substrate accounts for 20% of the grooved region 500. The silicon substrate 100 and the metal body 200 are thermally sintered at a temperature of 600°C for 1 minute to form an alloy layer 300 with a thickness of 200 nm between the substrate 100 and the metal body 200.

[0065] Example 3:

[0066] A groove is cut into the cell body 100 to form a grooved region 500, exposing the silicon substrate 100. A metal body 200 (titanium) is deposited on the substrate 100 in the grooved region 500 by electroplating. The sum of the contact areas between the metal body 200 and the substrate accounts for 40% of the grooved region 500. The silicon substrate 100 and the metal body 200 are thermally sintered at a temperature of 400°C for 10 minutes to form an alloy layer 300 with a thickness of 100 nm between the substrate 100 and the metal body 200.

[0067] Example 4:

[0068] A groove is cut into the cell body 100 to form a grooved region 500, exposing the silicon substrate 100. A metal body 200 (chromium) is deposited on the substrate 100 in the grooved region 500 by electroplating. The sum of the contact areas between the metal body 200 and the substrate accounts for 60% of the grooved region 500. The silicon substrate 100 and the metal body 200 are thermally sintered at a temperature of 600°C for 20 minutes to form an alloy layer 300 with a thickness of 300 nm between the substrate 100 and the metal body 200.

[0069] Comparative Example 1:

[0070] The difference from Example 1 is that metal (nickel) is laid on the entire substrate 100 of the slotted area 500, and after sintering, an entire alloy layer 300 is formed.

[0071] Performance and Testing:

[0072] On the alloy layer 300 obtained in Examples 1 to 4 and Comparative Example 1, a metal plating layer 400 was electroplated under the same conditions to metallize the solar cell, resulting in solar cells, which were designated as Products 1 to 5. Performance tests were then conducted on Products 1 to 5, and the testing process is as follows:

[0073] Voc test: Measure the average open-circuit voltage of the sample using a digital voltmeter;

[0074] 400 tensile test of metal coating: The sample to be tested is pulled off at a uniform speed of 180° using a universal testing machine, and the average tensile force value is measured.

[0075] Contact resistance test: The contact resistance of alloy layer 300 was measured using a contact resistance tester;

[0076] The test results are shown in Table 1 below:

[0077] Voc(mV) Tensile force (N) Contact resistance (Ω) Product 1 736 1.5 0.70 Product 2 738 3.2 0.89 Product 3 735 4.0 0.72 Product 4 736 2.8 0.84 Product 5 733 1.0 1.55

[0078] Table 1

[0079] Among them, the actual measured open-circuit voltage of product sample 5 was 733mV. Based on the actual measured open-circuit voltage of different manufacturers, which is between 730mV and 735mV, the open-circuit voltage of the battery cell can be increased by 1mV to 4mV through the process of this application.

[0080] Based on Table 1, the cell structure prepared in this application increases the open-circuit voltage by 1mV to 4mV, increases the tensile strength of the 400 metal plating layer by several times, and reduces the contact resistance.

[0081] This application also provides a battery cell structure, which can be manufactured using the above-described battery cell processing technology, such as... Figure 1 , 2 As shown, the solar cell structure includes: a solar cell body having a grooved area and a substrate exposed within the grooved area; a metal body disposed on the substrate; a plurality of metal bodies, with at least two metal bodies having a spacing d between them, the spacing d > 0; and a substrate-metal body alloy layer formed between the metal bodies and the substrate.

[0082] A metal body 200 is disposed on the substrate 100 located in the slotted region 500, serving as the connection basis between the substrate 100 and the metal plating layer 400. At the location of the metal body 200, the substrate 100 and the metal body 200 are fixedly connected, thereby forming a novel battery cell structure. Specifically, multiple metal bodies 200 are disposed on the substrate 100, and a distance d is provided between the multiple metal bodies 200, where d is greater than 0. An alloy layer 300 is formed between the metal body 200 and the substrate 100, and the alloy layer 300 fixes the substrate 100 and the metal body 200 together.

[0083] Specifically, multiple metal bodies 200 are dispersedly arranged. Dispersed arrangement means that at least the metal bodies 200 have a distance d between them, where the distance d > 0. It can be understood that the distance between the metal bodies 200 refers to the distance between the edge of one metal body 200 and the edge of another metal body 200. In other words, when there are two metal bodies 200 on the substrate 100, the two metal bodies 200 do not overlap. When there are more than two metal bodies 200 on the substrate 100, at least two of them do not overlap. Here, overlap refers to partial overlap and complete overlap.

[0084] In one embodiment, the material of the metal body 200 may be nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or titanium-aluminum alloy.

[0085] In one embodiment, the electroplating method of the metal body 200 may be electroplating, photo-induced plating, or chemical plating.

[0086] In one embodiment, the contact shape between the metal body 200 and the substrate 100 is circular, square, elliptical, or irregular; irregular shape refers to a shape with irregular edges; the contact shape can be adjusted by different arrangements of the metal body 200.

[0087] In one embodiment, within the slotted region 500, the sum of the contact areas between the metal body 200 and the substrate 100 accounts for between 1% and 99% of the slotted region 500. Preferably, the percentage can be 1%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 99%.

[0088] In another embodiment, the metal body 200 can also be disposed directly on the substrate 100 of the slotted region 500 by means of granular metal body 200; specifically, granular metal body 200 is uniformly spread on the substrate 100 of the slotted region 500, wherein the metal body 200 can be nano-sized or micro-sized particles.

[0089] This application also provides a battery cell that can be manufactured using the above-described battery cell processing technology, such as... Figure 1 ,2 As shown, the solar cell structure includes: a solar cell body having a grooved area and a substrate exposed within the grooved area; a metal body disposed on the substrate; a plurality of metal bodies, with at least two metal bodies having a spacing d between them, the spacing d > 0; and a substrate-metal body alloy layer formed between the metal bodies and the substrate.

[0090] A metal body 200 is disposed on the substrate 100 located in the slotted region 500, serving as the connection basis between the substrate 100 and the metal plating layer 400. At the location of the metal body 200, the substrate 100 and the metal body 200 are fixedly connected, thereby forming a novel battery cell structure. Specifically, multiple metal bodies 200 are disposed on the substrate 100, and a distance d is provided between the multiple metal bodies 200, where d is greater than 0. An alloy layer 300 is formed between the metal body 200 and the substrate 100, and the alloy layer 300 fixes the substrate 100 and the metal body 200 together.

[0091] Specifically, multiple metal bodies 200 are dispersedly arranged. Dispersed arrangement means that at least the metal bodies 200 have a distance d between them, where the distance d > 0. It can be understood that the distance between the metal bodies 200 refers to the distance between the edge of one metal body 200 and the edge of another metal body 200. In other words, when there are two metal bodies 200 on the substrate 100, the two metal bodies 200 do not overlap. When there are more than two metal bodies 200 on the substrate 100, at least two of them do not overlap. Here, overlap refers to partial overlap and complete overlap.

[0092] In one embodiment, the material of the metal body 200 may be nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or titanium-aluminum alloy.

[0093] In one embodiment, the electroplating method of the metal body 200 may be electroplating, photo-induced plating, or chemical plating.

[0094] In one embodiment, the contact shape between the metal body 200 and the substrate 100 is circular, square, elliptical, or irregular; irregular shape refers to a shape with irregular edges; the contact shape can be adjusted by different arrangements of the metal body 200.

[0095] In one embodiment, within the slotted region 500, the sum of the contact areas between the metal body 200 and the substrate 100 accounts for between 1% and 99% of the slotted region 500. Preferably, the percentage can be 1%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 99%.

[0096] In another embodiment, the metal body 200 can also be disposed directly on the substrate 100 by means of granular metal body 200; specifically, granular metal body 200 is uniformly spread on the substrate 100 in the grooved area 500, wherein the metal body 200 can be nano-sized or micro-sized particles.

[0097] like Figure 7 As shown, a metal plating layer 400 is disposed on the substrate 100 in the slotted region 500. The metal plating layer 400 is connected to or integrally formed with the metal body 200, so that the metal plating layer 400 is conductive to the substrate 100 through the metal body 200 (alloy layer 300); and the metal plating layer 400 is attached to the substrate 100 by van der Waals forces, so that the substrate 100 completes the metallization process. It is worth noting that the metal plating layer 400 is also disposed on the slotted region 500.

[0098] In one embodiment, the metal plating layer 400 is made of nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or titanium-aluminum alloy.

[0099] In one embodiment, the metal plating layer 400 is plated by electroplating, photo-induced plating, or chemical plating.

[0100] In one embodiment, the thickness of the metal plating layer 400 is between 1 μm and 50 μm.

[0101] In one embodiment, the metal plating layer 400 and the metal body 200 can be connected or integrally formed by electroplating, so that the metal plating layer 400 and the substrate 100 are connected through the alloy layer 300. During the electroplating process, the metal plating layer 400 gradually covers the metal body 200 and forms a tight bond with the metal body 200 through electroplating, that is, the metal body 200 and the metal plating layer 400 are connected or integrally formed. At the same time, other parts of the metal plating layer 400 form a physical attachment with the substrate 100, ensuring the stability and reliability of the entire structure. In this way, good electrical contact is guaranteed, and performance degradation due to material differences and peeling problems during long-term use are avoided.

[0102] This application involves setting multiple metal bodies 200 on a solar cell and forming an alloy layer 300 with a substrate 100 layer through sintering technology, followed by metallization fabrication based on this alloy layer 300. This application employs a dispersed metal body 200 layout on the substrate 100, effectively reducing the amount of alloy layer 300 formed between the metal bodies 200 and the substrate 100. The reason why the alloy layer 300 can cause damage to the substrate 100 is mainly because, during sintering, the metal bodies 200 and the substrate 100, due to their different coefficients of thermal expansion, will undergo different degrees of deformation. This difference in deformation will cause stress concentration in the alloy layer 300 areas, leading to defects such as cracks and dislocations in the silicon substrate 100, thus affecting the overall quality of the solar cell. The dispersed metal body 200 layout significantly reduces the risk of this stress concentration by reducing the total area of ​​the alloy layer 300 areas, thereby effectively protecting the integrity of the substrate 100. Furthermore, this design optimizes current conduction efficiency, enhances the mechanical strength and flexibility of the solar cell, simplifies the manufacturing process, and reduces costs.

[0103] By setting a metal body 200 on the solar cell and forming an alloy layer 300 with the silicon substrate 100, the metallization material can adhere better to the alloy layer 300, rather than directly to the more fragile silicon substrate 100. This alloy layer 300 provides stronger bonding and a more stable interface, thus significantly improving the adhesion of the metallization. Enhanced adhesion helps reduce potential detachment or peeling during the metallization process, thereby improving the overall quality and yield of the solar cell. No additional patterning or wet etching is required: Traditional metallization processes typically require patterning the metal layer to form specific electrode patterns and removing excess material through wet etching. This application avoids these complex steps by directly metallizing the sintered alloy layer 300. The simplified process means shorter production cycles and lower costs, thus significantly improving the production efficiency and capacity of solar cells.

[0104] Furthermore, by precisely controlling the size of the metal body 200, the thickness of the alloy layer 300 can be precisely controlled. This thickness control helps limit the reaction depth of the silicon substrate 100 during sintering, preventing damage to the substrate 100 due to over-reaction. Reduced passivation loss: Reduced reaction of the substrate 100 means less silicon surface is converted into an inactive state (i.e., passivation), thereby reducing passivation loss and improving the photoelectric conversion efficiency of the solar cell.

[0105] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0106] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A battery cell processing technology, characterized in that, include: A battery cell body is provided as a workpiece to be processed, and a groove is cut in the battery cell body to form a grooved area so that the substrate in the grooved area is exposed. A plurality of metal bodies are disposed on the substrate, and at least two of the metal bodies are spaced by a distance d, wherein the distance d > 0. An alloy layer of substrate-metal body is formed between the metal body and the substrate.

2. The battery cell processing technology according to claim 1, characterized in that, After "forming a substrate-metal alloy layer between the metal body and the substrate", the method further includes: A metal plating layer is provided on the substrate of the grooved area, so that the metal plating layer is connected to or integrally formed with the metal body.

3. The battery cell processing technology according to claim 1, characterized in that, The phrase "forming a substrate-metal alloy layer between the metal body and the substrate" includes: The substrate and the metal body are sintered.

4. The battery cell processing technology according to claim 3, characterized in that, The sintering temperature is between 200℃ and 900℃.

5. The battery cell processing technology according to claim 1, characterized in that, The metal body is formed by electroplating, photo-induced plating, or chemical plating.

6. The battery cell processing technology according to claim 1, characterized in that, The metal body is configured by providing multiple granular metal bodies, which are arranged on the substrate within the slotted area.

7. The battery cell processing technology according to claim 1, characterized in that, The substrate is silicon or TCO.

8. The battery cell processing technology according to claim 1 or 6, characterized in that, The metal body includes nickel, cobalt, chromium, titanium, tungsten, aluminum, silver, zinc, lead, indium, tin, copper, TiV, or titanium-aluminum alloy.

9. The battery cell processing technology according to claim 1 or 6, characterized in that, The sum of the contact areas between the metal body and the substrate accounts for 1% to 90% of the grooved area.

10. The battery cell processing technology according to claim 1, characterized in that, The thickness of the alloy layer is between 1 nm and 1000 nm.

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