A method for removing semiconductor epitaxial film based on low-temperature non-equilibrium defect rapid thermal excitation

Abstract

The application relates to a semiconductor epitaxial film stripping method based on low-temperature non-equilibrium defect rapid thermal excitation, which comprises the following steps: preparing a semiconductor epitaxial film on a preset semiconductor substrate by using a low-temperature non-equilibrium epitaxial growth mode; performing rapid thermal excitation treatment on the semiconductor epitaxial film, so that the semiconductor epitaxial film spontaneously strips from the semiconductor substrate; transferring the stripped semiconductor epitaxial film to a preset target substrate, and performing surface repair on the semiconductor substrate. The prepared film has high integrity and strong universality. In addition, the annealing activation and the stripping process are integrated, the stripping time is significantly shortened, the process is simple and controllable, a sacrifice layer, chemical corrosion or ion implantation is not needed, the material and equipment costs are reduced, and the substrate can be repeatedly used.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method for removing semiconductor epitaxial thin films based on rapid thermal excitation of low-temperature non-equilibrium defects. Background Technology

[0002] High-quality lift-off and transfer of semiconductor epitaxial films are key fundamental processes in heterogeneous integration, flexible electronics, high-performance optoelectronic devices, and advanced packaging. Currently, III-V semiconductor and wide-bandgap semiconductor epitaxial films are typically grown on rigid substrates such as GaAs, InP, Si, and sapphire. However, in various applications, it is necessary to lift and transfer functional epitaxial layers from the original substrate to different carriers. Therefore, there is an urgent need for efficient, low-damage, and scalable film lift-off technologies.

[0003] Currently, the mainstream semiconductor thin film stripping and transfer technologies mainly include: chemical selective etching stripping technology, ion implantation dicing technology, laser-induced stripping technology, and mechanical stripping and bonding-assisted transfer technology.

[0004] Chemical selective etching (ELO) is a technique that typically involves introducing a selectively etchable sacrificial layer between the functional epitaxial layer and the substrate. The sacrificial layer is then wet-etched using an etchant such as hydrofluoric acid, thereby releasing the epitaxial film. This method has found some application in GaAs-based optoelectronic devices and thin film transfer. However, this type of method has the following drawbacks: (1) A sacrificial layer needs to be grown in advance, making the process complex; (2) The corrosion process is slow, the peeling area is limited, and it is difficult to achieve large-size uniform peeling; (3) Chemical etching solutions can easily cause irreversible damage to epitaxial layers, electrode structures and device interfaces; (4) It has strong limitations on the material system and is difficult to extend to wide bandgap semiconductors and complex heterostructure systems.

[0005] Smart Cut, an ion implantation cleaving technique, creates a high-density microvoid layer beneath the epitaxial film by implanting hydrogen or helium ions into the substrate. Subsequent heat treatment induces microcrack propagation, enabling film peeling. This technique has been successfully applied in silicon-based material systems such as SOI. However, its application in III-V group and wide-bandgap semiconductors still faces the following significant limitations: (1) Ion implantation introduces severe radiation damage, which significantly degrades the electrical and optical properties of epitaxial materials; (2) Poor adaptability to film thickness and material type; (3) The equipment costs are high and the process is complex, which is not conducive to low-cost promotion.

[0006] Laser-induced lift-off (LLO) technology typically utilizes short-wavelength high-energy lasers to generate transient high temperatures or decomposition reactions at the interface between a transparent substrate and an epitaxial film, thereby achieving film lift-off. It is widely used in GaN-on-sapphire systems. However, this technology still has the following significant limitations: (1) The applicable material systems are limited, and the substrate is usually required to be transparent to lasers; (2) Laser irradiation can easily introduce thermal stress, ablation and defects, affecting the integrity of the thin film; (3) It has extremely high requirements for large-area uniformity and interlayer stress control, and the process window is narrow.

[0007] Mechanical peeling and bond-assisted transfer technologies, which achieve film transfer through external force peeling, temporary carrier bonding, or polymer support layers, offer intuitive processes but have drawbacks: (1) The peeling interface is uncontrollable, which can easily lead to film cracking; (2) Low interface cleanliness limits the yield of subsequent devices; (3) It is difficult to achieve high repeatability and large-scale manufacturing.

[0008] Invention patent "CN110783170A" discloses a method for semiconductor thin film peeling and substrate transfer, comprising: preparing a semiconductor thin film substrate structure, the semiconductor thin film substrate structure including a first substrate layer, a plurality of seed crystal structures and a semiconductor thin film layer, wherein the plurality of seed crystal structures have holes and are interconnected; peeling the plurality of seed crystal structures and the semiconductor thin film layer from the first substrate layer; and bonding the side of the plurality of seed crystal structures away from the semiconductor thin film layer to a second substrate layer, thereby completing the process of semiconductor thin film peeling and substrate transfer. However, existing peeling technologies generally rely on external interference methods such as chemical etching, ion irradiation or high-energy lasers, which have problems such as large material damage, complex processes, high costs, and limited applicability, making it difficult to simultaneously achieve low damage, large area, high consistency and versatility.

[0009] Therefore, how to fully utilize the intrinsic or tunable defect characteristics of materials during epitaxial growth and achieve controllable, low-damage self-peeling of epitaxial films from substrates solely through thermal processes without introducing a sacrificial layer, performing ion implantation, or relying on high-energy lasers has become a key technical problem that urgently needs to be solved in this field. Summary of the Invention

[0010] To overcome the technical problem of low-damage self-peeling of semiconductor epitaxial films in the prior art, this invention provides a semiconductor epitaxial film peeling method based on rapid thermal excitation of low-temperature non-equilibrium defects.

[0011] To solve the above-mentioned technical problems, the technical solution of the present invention is as follows: A method for stripping semiconductor epitaxial thin films based on rapid thermal excitation of low-temperature non-equilibrium defects includes the following steps: S1: Prepare a semiconductor epitaxial thin film on a pre-defined semiconductor substrate using a low-temperature non-equilibrium epitaxial growth method; S2: Perform rapid thermal excitation treatment on the semiconductor epitaxial film, thereby causing the semiconductor epitaxial film to spontaneously peel off from the semiconductor substrate.

[0012] Preferably, the semiconductor substrate comprises at least one of the following: GaAs, InP, Si, sapphire, SiC, and GaN.

[0013] Preferably, in step S1, a low-temperature non-equilibrium epitaxial growth method is used to prepare a semiconductor epitaxial thin film. By controlling the growth temperature, V / III ratio, growth rate and doping conditions, a non-equilibrium defect structure is introduced near the interface between the semiconductor epitaxial thin film and the semiconductor substrate.

[0014] Preferably, the non-equilibrium defects include any one or more of the following: high-density point defects, high-density vacancy defects, high-density arsenic antisite defects, and non-stoichiometric structures.

[0015] Preferably, the semiconductor epitaxial film includes any one or more of the following: III-V group semiconductors, wide bandgap semiconductors, and their heteroepitaxial structures.

[0016] Preferably, in step S2, the semiconductor epitaxial film undergoes rapid thermal excitation treatment, causing transient mechanical and structural instability at the interface between the semiconductor epitaxial film and the semiconductor substrate, and forming microcrack propagation channels, ultimately achieving spontaneous peeling of the semiconductor epitaxial film from the growth substrate.

[0017] Preferably, the rapid thermal excitation treatment has a heating rate of 10~600℃ / s, an annealing temperature of 200~900℃, and a holding time of 1~1200s.

[0018] Preferably, the rapid thermal annealing atmosphere includes any one or more of the following: N2, H2, vacuum, and inert gas.

[0019] Preferably, the target substrate includes any one or more of the following: Si, glass, flexible polymer substrate, sapphire, and metal substrate.

[0020] Preferably, the method further includes: after peeling off the semiconductor epitaxial film, transferring the peeled semiconductor epitaxial film to a preset target substrate, and performing surface repair on the semiconductor substrate.

[0021] Compared with the prior art, the beneficial effects of the technical solution of the present invention are: This invention provides a method for removing semiconductor epitaxial films based on rapid thermal excitation of low-temperature non-equilibrium defects, comprising the following steps: preparing a semiconductor epitaxial film on a preset semiconductor substrate using a low-temperature non-equilibrium epitaxial growth method; and subjecting the semiconductor epitaxial film to rapid thermal excitation treatment, thereby causing the semiconductor epitaxial film to spontaneously peel off from the semiconductor substrate.

[0022] This invention integrates the annealing activation and stripping processes, reducing the stripping time to within tens of seconds. The process is simple and controllable, eliminating the need for sacrificial layers, chemical etching, or ion implantation, thus lowering material and equipment costs. Furthermore, the substrate can be reused. The thin films prepared by this invention have intact lattices, smooth interfaces, and are free of damage and chemical residues, exhibiting high quality. It is applicable to various III-V group and wide-bandgap semiconductor materials and can be transferred to various substrates, including flexible and silicon-based substrates, showing promising application prospects in flexible electronics and heterogeneous integration. This method is stable, easy to implement, and provides a reliable thin film material and process foundation for high-performance optoelectronic devices and heterogeneous integration. Attached Figure Description

[0023] Figure 1 This is a flowchart of a semiconductor epitaxial thin film peeling method based on rapid thermal excitation of low-temperature non-equilibrium defects in Example 1; Figure 2 This is a schematic cross-sectional view of the epitaxial structure of a semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects in Example 2. Figure 3 This is a schematic diagram of the rapid thermal excitation process and temperature curve of a semiconductor epitaxial thin film peeling method based on rapid thermal excitation of low-temperature non-equilibrium defects in Example 2. Figure 4 This is a schematic diagram illustrating the mechanism of transient film peeling induced by interface defect aggregation during the rapid thermal excitation process in a semiconductor epitaxial film peeling method based on rapid thermal excitation of low-temperature non-equilibrium defects in Example 2. Figure 5 This is a schematic diagram illustrating the application of a semiconductor epitaxial film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects in Example 2, where the lifted-off semiconductor epitaxial film is transferred to the target substrate. Detailed Implementation

[0024] The accompanying drawings are for illustrative purposes only and should not be construed as limiting the scope of this application. To better illustrate this embodiment, some parts in the accompanying drawings may be omitted, enlarged, or reduced, and do not represent the actual product dimensions; It will be understood by those skilled in the art that certain well-known structures and their descriptions may be omitted in the accompanying drawings.

[0025] The technical solution of the present invention will be further described below with reference to the accompanying drawings and embodiments.

[0026] Example 1 Flowchart as follows Figure 1 As shown, a method for removing semiconductor epitaxial thin films based on rapid thermal excitation of low-temperature non-equilibrium defects includes the following steps: S1: Prepare a semiconductor epitaxial thin film on a pre-defined semiconductor substrate using a low-temperature non-equilibrium epitaxial growth method; S2: Perform rapid thermal excitation treatment on the semiconductor epitaxial film, thereby causing the semiconductor epitaxial film to spontaneously peel off from the semiconductor substrate.

[0027] In the specific implementation process, a preset semiconductor substrate is first selected, and then a semiconductor epitaxial film is prepared on the semiconductor substrate using a low-temperature non-equilibrium epitaxial growth method. This introduces a non-equilibrium defect structure that can be subsequently thermally excited into the semiconductor epitaxial film and near its interface with the substrate. Low-temperature non-equilibrium defects refer to a type of non-thermal equilibrium structural defect formed under low-temperature epitaxial growth conditions. Its specific forms include any one or more of the following: high-density point defects, high-density vacancy defects, high-density arsenic antisite defects, and non-stoichiometric structures.

[0028] Next, the epitaxial structure, including the semiconductor epitaxial thin film and the semiconductor substrate, is subjected to rapid thermal excitation, which causes low-temperature non-equilibrium defects to be transiently activated, migrated, aggregated or reconstructed in a short time, forming a transient high strain gradient or a local structural instability region at the interface between the epitaxial thin film and the substrate. During the rapid thermal excitation process or the subsequent cooling stage, under the combined action of thermal mismatch stress, defect evolution stress and abrupt change in interface binding energy, the interface between the semiconductor epitaxial thin film and the semiconductor substrate undergoes transient mechanical and structural instability, forming microcrack propagation channels, and finally achieving spontaneous peeling of the semiconductor epitaxial thin film from the growth substrate.

[0029] Example 2 A method for stripping semiconductor epitaxial thin films based on rapid thermal excitation of low-temperature non-equilibrium defects includes the following steps: S1: Prepare a semiconductor epitaxial thin film on a pre-defined semiconductor substrate using a low-temperature non-equilibrium epitaxial growth method; S2: Perform rapid thermal excitation treatment on the semiconductor epitaxial film, thereby causing the semiconductor epitaxial film to spontaneously peel off from the semiconductor substrate.

[0030] The semiconductor substrate includes at least one of the following: GaAs, InP, Si, sapphire, SiC, and GaN.

[0031] In step S1, a semiconductor epitaxial film is prepared by low-temperature non-equilibrium epitaxial growth. By controlling the growth temperature, V / III ratio, growth rate and doping conditions, a non-equilibrium defect structure is introduced near the interface between the semiconductor epitaxial film and the semiconductor substrate.

[0032] Non-equilibrium defects include any one or more of the following: high-density point defects, high-density vacancy defects, high-density arsenic antisite defects, and non-stoichiometric structures.

[0033] The semiconductor epitaxial thin film includes any one or more of the following: III-V group semiconductors, wide bandgap semiconductors, and their heteroepitaxial structures.

[0034] In step S2, the semiconductor epitaxial film undergoes rapid thermal excitation treatment, causing transient mechanical and structural instability at the interface between the semiconductor epitaxial film and the semiconductor substrate, and forming microcrack propagation channels, ultimately achieving spontaneous peeling of the semiconductor epitaxial film from the growth substrate.

[0035] The rapid thermal excitation treatment has a heating rate of 10~600℃ / s, an annealing temperature of 200~900℃, and a holding time of 1~1200s.

[0036] The rapid thermal activation annealing atmosphere includes any one or more of the following: N2, H2, vacuum, and inert gas.

[0037] The target substrate includes any one or more of the following: Si, glass, flexible polymer substrate, sapphire, and metal substrate.

[0038] The method further includes: after completing the stripping of the semiconductor epitaxial film, transferring the stripped semiconductor epitaxial film to a preset target substrate, and performing surface repair on the semiconductor substrate.

[0039] In the specific implementation process, the schematic diagram of the extension structure cross-section is as follows: Figure 2 As shown, a pre-selected GaAs substrate is used as the semiconductor substrate 10. In this embodiment, a conventional GaAs or AlGaAs buffer layer is also stacked on the semiconductor substrate 10 as a buffer layer 20 of the epitaxial structure to assist in controlling the peeling interface behavior. The GaAs thin film is prepared by a low-temperature non-equilibrium epitaxial growth method, that is, the semiconductor epitaxial film 30 in this embodiment is a GaAs thin film. The growth temperature of the semiconductor epitaxial film 30 is controlled at 150-400℃ and the thickness is 0.5-3μm. Under the low-temperature non-equilibrium growth conditions, high-density As inversion defects, high-density vacancy defects and high-density point defects are introduced into the semiconductor epitaxial film 30, so that it is in a non-equilibrium high internal stress metastable structure.

[0040] Next, the entire epitaxial structure is placed in a rapid thermal activation device and subjected to rapid thermal annealing (RTA) under an inert atmosphere or nitrogen protection environment. The RTA heating rate is controlled at 10-600℃ / s, the annealing temperature is controlled at 200-900℃, and the annealing time is 1-1200 s. The process flow and temperature curve diagram of the rapid thermal activation treatment are shown in the figure. Figure 3 As shown; during rapid thermal excitation, the non-equilibrium defects introduced by low-temperature growth undergo transient reconstruction and energy release, simultaneously generating a strong transient thermal stress field at the interface between the semiconductor epitaxial film 30 and the buffer layer 20, providing an energy basis for subsequent interface instability and self-cutting; under rapid heating and transient high-temperature conditions, due to the significant differences in lattice constant, thermal expansion coefficient, and defect density between the semiconductor epitaxial film 30 and the buffer layer 20, severe thermal stress concentration occurs at the interface; such as Figure 4 As shown, when the interfacial shear stress and peel stress exceed the critical bonding strength of the interface, the semiconductor epitaxial film 30 undergoes spontaneous cutting behavior induced by interface instability under the conditions of no external force etching, no ion implantation, and no sacrificial layer corrosion, thereby realizing the transient peeling of the semiconductor epitaxial film 30 from the semiconductor substrate 10. This peeling process is essentially a "stress-driven self-cutting" mechanism, rather than the traditional defect enrichment corrosion or ion implantation micro-cracking mechanism, and has the advantages of neat interface, small damage, and no chemical pollution.

[0041] like Figure 5 As shown, the stripped semiconductor epitaxial film 30 is transferred to the target substrate 40 by bonding layer or hot pressing. The target substrate 40 can be a flexible polymer substrate, sapphire substrate or silicon substrate, used for the fabrication of terahertz photoconductive emitters, detectors and flexible optoelectronic devices. The stripped semiconductor substrate 10 is not damaged by ion implantation or chemical corrosion. After simple polishing and cleaning, it can be reused for multiple rounds of epitaxial growth.

[0042] This invention eliminates the need for ion implantation, avoiding the implantation damage and deep defect residue problems introduced in traditional Smart-Cut processes; it also eliminates the need for sacrificial layer wet etching, avoiding the erosion and contamination of device layers by etchants such as HF and HCl; moreover, the peeling interface is flat and stress is controllable, with the interface triggered by thermal stress instability, resulting in low peeling interface roughness; it is also applicable to various semiconductor systems, and can be extended to GaAs, InP, GaN, InGaAs, AlGaN, and their heteroepitaxial structures; furthermore, the substrate of this invention can be reused, significantly reducing the manufacturing cost of III-V group semiconductor epitaxy; finally, this invention is also applicable to flexible electronics and heterogeneous integrated devices, enabling high-quality transfer of semiconductor epitaxial thin films 30 to flexible target substrates 40.

[0043] Example 3 A method for stripping semiconductor epitaxial thin films based on rapid thermal excitation of low-temperature non-equilibrium defects includes the following steps: S1: Prepare a semiconductor epitaxial thin film on a pre-defined semiconductor substrate using a low-temperature non-equilibrium epitaxial growth method; S2: Perform rapid thermal excitation treatment on the semiconductor epitaxial film, thereby causing the semiconductor epitaxial film to spontaneously peel off from the semiconductor substrate.

[0044] The semiconductor substrate includes at least one of the following: GaAs, InP, Si, sapphire, SiC, and GaN.

[0045] In step S1, a semiconductor epitaxial film is prepared by low-temperature non-equilibrium epitaxial growth. By controlling the growth temperature, V / III ratio, growth rate and doping conditions, a non-equilibrium defect structure is introduced near the interface between the semiconductor epitaxial film and the semiconductor substrate.

[0046] Non-equilibrium defects include any one or more of the following: high-density point defects, high-density vacancy defects, high-density arsenic antisite defects, and non-stoichiometric structures.

[0047] The semiconductor epitaxial thin film includes any one or more of the following: III-V group semiconductors, wide bandgap semiconductors, and their heteroepitaxial structures.

[0048] In step S2, the semiconductor epitaxial film undergoes rapid thermal excitation treatment, causing transient mechanical and structural instability at the interface between the semiconductor epitaxial film and the semiconductor substrate, and forming microcrack propagation channels, ultimately achieving spontaneous peeling of the semiconductor epitaxial film from the growth substrate.

[0049] The rapid thermal excitation treatment has a heating rate of 10~600℃ / s, an annealing temperature of 200~900℃, and a holding time of 1~1200s.

[0050] The rapid thermal activation annealing atmosphere includes any one or more of the following: N2, H2, vacuum, and inert gas.

[0051] The target substrate includes any one or more of the following: Si, glass, flexible polymer substrate, sapphire, and metal substrate.

[0052] The method further includes: after completing the stripping of the semiconductor epitaxial film, transferring the stripped semiconductor epitaxial film to a preset target substrate, and performing surface repair on the semiconductor substrate.

[0053] In the specific implementation process, this embodiment Figure 2 , Figure 3 , Figure 4 , Figure 5The structure is consistent with that in the attached figure of Example 2, with only some materials being different. In this example, an InP single crystal substrate is used as the semiconductor substrate 10. The buffer layer 20 in this example is the same as the buffer layer 20 in Example 2. The semiconductor epitaxial film 30 in this example is an InGaAs film. The target substrate 40 in this example is the same as the target substrate 40 in Example 2.

[0054] Epitaxial structures such as Figure 2 As shown, semiconductor epitaxial films 30 are prepared by low-temperature molecular beam epitaxy or low-temperature metal-organic chemical vapor deposition at a growth temperature of 150-400℃. High-density point defects, vacancy defects and antisite defects are introduced under non-thermal equilibrium conditions to put the semiconductor epitaxial film 30 in a high internal stress energy storage state.

[0055] The epitaxial structure, including the semiconductor substrate 10, buffer layer 20, and semiconductor epitaxial thin film 30, is then placed into a rapid thermal excitation device, such as... Figure 3 As shown, rapid thermal annealing is performed under a nitrogen or argon protective atmosphere, with the heating rate controlled at 10-600℃ / s, the annealing temperature controlled at 200-900℃, and the annealing time at 1-1200s.

[0056] like Figure 4 As shown, under rapid heating and transient high temperature conditions, a strong transient thermal stress field is formed at the interface between the InGaAs film and the InP substrate due to the combined effects of thermal expansion coefficient mismatch and sudden stress change within the interface. When this stress exceeds the critical bonding strength of the interface, it automatically propagates along the epitaxial interface direction to form a self-cutting crack surface, achieving automatic overall separation of the InGaAs film and the InP substrate.

[0057] like Figure 5 As shown, the InGaAs thin film after peeling is transferred onto the target substrate 40 for the fabrication of high-speed photodetectors, terahertz photoconductors, multi-junction solar cells, or flexible optoelectronic devices. The peeled InP substrate can be reused for epitaxial growth after surface polishing and cleaning repair.

[0058] The method of this invention is applicable to various III-V heterostructure systems such as InGaAs / InP; and the exfoliation process is stable and controllable, the film has good integrity, and the exfoliation interface is flat, which is conducive to high-quality heterostructure integration.

[0059] The same or similar labels correspond to the same or similar parts; The terms used to describe positional relationships in the accompanying drawings are for illustrative purposes only and should not be construed as limiting this application. Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A method for lifting semiconductor epitaxial thin films based on rapid thermal excitation of low-temperature non-equilibrium defects, characterized in that, Includes the following steps: S1: Prepare a semiconductor epitaxial thin film on a pre-defined semiconductor substrate using a low-temperature non-equilibrium epitaxial growth method; S2: Perform rapid thermal excitation treatment on the semiconductor epitaxial film, thereby causing the semiconductor epitaxial film to spontaneously peel off from the semiconductor substrate.

2. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 1, characterized in that, The semiconductor substrate includes at least one of the following: GaAs, InP, Si, sapphire, SiC, and GaN.

3. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 1, characterized in that, In step S1, a semiconductor epitaxial film is prepared by low-temperature non-equilibrium epitaxial growth. By controlling the growth temperature, V / III ratio, growth rate and doping conditions, a non-equilibrium defect structure is introduced near the interface between the semiconductor epitaxial film and the semiconductor substrate.

4. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 3, characterized in that, Non-equilibrium defects include any one or more of the following: high-density point defects, high-density vacancy defects, high-density arsenic antisite defects, and non-stoichiometric structures.

5. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 3, characterized in that, The semiconductor epitaxial thin film includes any one or more of the following: III-V group semiconductors, wide bandgap semiconductors, and their heteroepitaxial structures.

6. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 1, characterized in that, In step S2, the semiconductor epitaxial film undergoes rapid thermal excitation treatment, causing transient mechanical and structural instability at the interface between the semiconductor epitaxial film and the semiconductor substrate, and forming microcrack propagation channels, ultimately achieving spontaneous peeling of the semiconductor epitaxial film from the growth substrate.

7. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 6, characterized in that, The rapid thermal excitation treatment has a heating rate of 10~600℃ / s, an annealing temperature of 200~900℃, and a holding time of 1~1200s.

8. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 7, characterized in that, The rapid thermal activation annealing atmosphere includes any one or more of the following: N2, H2, vacuum, and inert gas.

9. The semiconductor epitaxial thin film lift-off method based on rapid thermal excitation of low-temperature non-equilibrium defects according to claim 1, characterized in that, The target substrate includes any one or more of the following: Si, glass, flexible polymer substrate, sapphire, and metal substrate.

10. A method for semiconductor epitaxial thin film lift-off based on rapid thermal excitation of low-temperature non-equilibrium defects according to any one of claims 1 to 9, characterized in that, The method further includes: after completing the stripping of the semiconductor epitaxial film, transferring the stripped semiconductor epitaxial film to a preset target substrate, and performing surface repair on the semiconductor substrate.

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