Insulated gate bipolar transistor device, method of manufacture, and electronic device

CN122121666APending Publication Date: 2026-05-29HUAWEI TECH CO LTD
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Patent Information

Application Number
CN202411717970.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-27
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In semiconductor manufacturing processes, cracks can easily appear at the edges of the semiconductor substrate and the interlayer dielectric layer during the dicing process, which can damage IGBT devices and affect their reliability and stability.

Method used

In IGBT devices, a protective structure is introduced that penetrates the interlayer dielectric layer and extends into the semiconductor substrate. The protective structure surrounds the terminal region and is made of a different material from the semiconductor substrate and the interlayer dielectric layer, forming a clear interface to prevent the extension of cracks. Combined with conductive materials, it improves heat dissipation performance and mechanical strength.

Benefits of technology

It effectively prevents crack propagation, improves the reliability and stability of IGBT devices, reduces the risk of electrostatic discharge, increases yield, and reduces process complexity and cost.

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Abstract

The application discloses an insulated gate bipolar transistor (IGBT) device, a preparation method and an electronic device, and belongs to the technical field of semiconductors.The IGBT device comprises a semiconductor substrate, an interlayer dielectric layer and a protective structure.The interlayer dielectric layer covers one side of the semiconductor substrate.The semiconductor substrate comprises a terminal region and a dicing lane region.The dicing lane region surrounds the terminal region.The protective structure penetrates the interlayer dielectric layer and extends into the semiconductor substrate.The material of the protective structure is different from the material of the semiconductor substrate and the material of the interlayer dielectric layer, respectively.Therefore, the protective structure has clear interfaces with the semiconductor substrate and the interlayer dielectric layer, respectively.In the cutting process, cracks generated at the edges of the interlayer dielectric layer and the semiconductor substrate can extend along the interfaces between the protective structure and the semiconductor substrate and the interlayer dielectric layer after extending to the area where the protective structure is located, the risk of the cracks extending to the interior of the IGBT device is reduced, and the reliability and stability of the IGBT device are improved.
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