Semiconductor device

By alternating wide and narrow IGBT regions in a semiconductor device and utilizing a heat dissipation path connected to the lead frame and solder, the problems of heat dissipation and up-voltage rise in RC-IGBTs are solved, achieving a combination of high-efficiency heat dissipation and low up-voltage.

CN122123137APending Publication Date: 2026-05-29HITACHI POWER SEMICON DEVICE LTD
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Patent Information

Application Number
CN202480070479.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-08
Filing Date
2024-11-18
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In RC-IGBTs, increasing the boundary area between the IGBT region and the diode region to improve heat dissipation results in insufficient carrier accumulation in the IGBT region, leading to an increase in the on-state voltage and affecting heat dissipation and conduction performance.

Method used

In semiconductor devices, IGBT regions and diode regions are alternately configured, and wide and narrow IGBT regions are set within the chip. They are connected to solder via lead frames to increase heat dissipation paths and improve heat dissipation, while suppressing the rise of the on-state voltage.

Benefits of technology

This improves the overall heat dissipation of the device while suppressing the rise of the on-state voltage in the IGBT region, thus maintaining good conduction performance.

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Abstract

Provided is a semiconductor device capable of improving the heat dissipation of the entire device while suppressing an increase in the on-voltage of an IGBT region. A semiconductor device includes a chip having an IGBT region and a diode region; a lead frame electrically connected to an upper surface of the chip via solder; and an insulating substrate electrically connected to a lower surface of the chip via solder, wherein the IGBT region and the diode region are alternately arranged in the chip, and the unit width of the IGBT region at a position electrically connected to the lead frame via the solder is wider than the unit width of the IGBT region at other positions.
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Citation Information

Patent Citations

  • Semiconductor device

    JP2013138069A