Method and apparatus for optimizing a MEMS infrared light source
CN122133452APending Publication Date: 2026-06-02INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2026-02-04
- Publication Date
- 2026-06-02
Smart Images

Figure CN122133452A_ABST
Abstract
The application discloses a MEMS infrared light source optimization method and device, and relates to the technical field of infrared light source design, to solve the problem that the existing infrared light source optimization method relies on artificial experience, resulting in long design optimization time and low efficiency. The method comprises the following steps: obtaining a parameterized model and target performance parameters of the MEMS infrared light source; the parameterized model is a set of design parameters of the MEMS infrared light source; based on the value interval of the parameterized model, an initial design parameter is generated based on a reverse search method, and the initial design parameter is input into a trained forward neural network to obtain a performance prediction result; if the deviation of the performance prediction result and the target performance parameters does not meet the standard, the initial design parameter is iteratively optimized based on the deviation, until the deviation meets the standard, and the target infrared light source design parameter is output. The application is used for improving the optimization efficiency of the MEMS infrared light source.
Need to check novelty before this filing date? Find Prior Art