A thin film deposition apparatus, a working method, a storage medium, and an electronic device

Abstract

The application discloses a thin film deposition device, a working method, a storage medium and electronic equipment. The thin film deposition device comprises a reaction cavity, a gas spraying disc and a base in the reaction cavity, a gas extraction ring is arranged on the side wall of the reaction cavity, the gas extraction ring is communicated with a first gas extraction gas path, a gas extraction opening is arranged on the bottom wall of the reaction cavity, and the gas extraction opening is communicated with a second gas extraction gas path. The working method of the device comprises the following steps: in a process phase, the first gas extraction gas path is opened, the second gas extraction gas path is closed, process gas is introduced into the inside of the reaction cavity through the gas spraying disc, and the outside of the reaction cavity is exhausted through the gas extraction ring and the first gas extraction gas path; in a cleaning phase, the first gas extraction gas path is closed, the second gas extraction gas path is opened, cleaning gas is delivered to the inside of the reaction cavity through the gas spraying disc, and the outside of the reaction cavity is exhausted through the gas extraction opening and the second gas extraction gas path. The device and the method can effectively improve the cleaning efficiency of the bottom space in the cavity, and further improve the overall cleaning efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and more specifically to a thin film deposition apparatus, a working method, a storage medium, and an electronic device. Background Technology

[0002] In the manufacturing process of semiconductor devices, a large number of micro-processes are required. Commonly used micro-processing methods include atomic layer deposition, chemical vapor deposition, physical vapor deposition, and plasma processing to process semiconductor components or wafers. The micro-processing manufacturing process is usually carried out in a reaction chamber. During the process, process gases are introduced into the reaction chamber, and external energy is input to activate the process gases, thereby processing the surface of the semiconductor component or wafer substrate.

[0003] With the rapid development of semiconductor technology and the increasing integration of devices, chip sizes are becoming smaller and smaller. To ensure chip quality, the requirements for semiconductor devices and their processes are becoming increasingly stringent. While thin-film deposition equipment has undergone numerous upgrades and its performance has been greatly improved, it still has many shortcomings in terms of thin-film deposition yield and throughput. Especially with the rapid advancement of chip technology and the constant updating of technology nodes, existing thin-film deposition equipment and methods are no longer sufficient to meet the requirements. For example, after a wafer is processed in a reaction chamber, it is usually moved out of the chamber, and the interior of the reaction chamber is cleaned to remove residues left on the inner walls or other components from the reaction process. After the cleaning step is completed, the next wafer processing step continues. However, existing thin-film deposition equipment and its cleaning methods cannot achieve sufficient removal, which affects subsequent wafer processing steps. Therefore, improvements to existing thin-film deposition equipment and its operating methods are necessary.

[0004] It is understood that the above statements only provide background information related to the present invention and do not necessarily constitute prior art. Summary of the Invention

[0005] Based on the aforementioned technical problems, the purpose of this invention is to provide a thin film deposition apparatus, a working method, a storage medium, and an electronic device. By using an extraction ring and a first extraction gas path provided on the side wall of the reaction chamber that are only used in the process stage, and an extraction port and a second extraction gas path provided on the bottom wall of the reaction chamber that are only used in the cleaning stage, the device can effectively improve the cleaning efficiency of the bottom space inside the chamber while ensuring the deposition effect on the wafer surface, thereby improving the cleaning efficiency and cleaning effect of the reaction chamber as a whole and its internal equipment.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0007] A method for operating a thin film deposition apparatus, the apparatus comprising a reaction chamber, the reaction chamber containing a gas spray disk located at the top and a base disposed opposite to the gas spray disk, a suction ring disposed on the side wall of the reaction chamber and communicating with a first suction gas path, and a suction port disposed on the bottom wall of the reaction chamber and communicating with a second suction gas path, the method comprising a process stage and a cleaning stage.

[0008] In the process stage, the first exhaust gas path is opened, the second exhaust gas path is closed, the process gas is introduced into the interior of the reaction chamber through the gas spray plate, and the exhaust gas is discharged to the outside of the reaction chamber through the exhaust ring and the first exhaust gas path.

[0009] During the cleaning phase, the first exhaust air path is closed, the second exhaust air path is opened, and cleaning gas is delivered to the interior of the reaction chamber through the gas spray plate, and exhaust gas is discharged to the outside of the reaction chamber through the exhaust port and the second exhaust air path.

[0010] Optionally, the suction ring is located below the gas spray disk.

[0011] Optionally, the suction ring is located in the upper chamber region of the reaction chamber, and the length of the upper chamber region accounts for 15% to 30% of the length of the reaction chamber in the vertical direction.

[0012] Optionally, the thin film deposition apparatus further includes a cover ring mounted on the inner wall of the reaction chamber, the base is liftable, and the operating method further includes:

[0013] During the cleaning phase, the base is in the first position and is in contact with the cover ring;

[0014] Alternatively, during the cleaning phase, the base is in a second position, and the base is separated from the cover ring.

[0015] Optionally, at the initial stage of the cleaning phase, the base is located in the first position.

[0016] Optionally, the thin film deposition apparatus further includes a detection device, and the operating method further includes:

[0017] The cleanliness of the reaction chamber is detected by the detection device.

[0018] Optionally, the detection setting is connected to the first air extraction path;

[0019] And / or, the detection device is connected to the second air extraction path;

[0020] And / or, the thin film deposition apparatus further includes a third exhaust gas path communicating with the interior of the reaction chamber, and the detection device is communicated with the third exhaust gas path.

[0021] Optionally, at least one air extraction port is provided on the bottom wall of the reaction chamber.

[0022] Optionally, the bottom wall of the reaction chamber is provided with multiple air extraction ports, and each air extraction port is symmetrically arranged circumferentially.

[0023] Optionally, at least one switch valve is provided in the first air extraction line.

[0024] Optionally, at least one switch valve is provided in the second air extraction line.

[0025] Optionally, the thin film deposition apparatus is an atomic layer deposition apparatus.

[0026] Optionally, a thin film deposition apparatus is provided for performing the aforementioned operating method of the thin film deposition apparatus, the thin film deposition apparatus comprising:

[0027] The reaction chamber includes a gas spray plate at the top and a base opposite to the gas spray plate. A suction ring is provided on the side wall of the reaction chamber and is connected to a first suction gas path. A suction port is provided on the bottom wall of the reaction chamber and is connected to a second suction gas path.

[0028] Optionally, a storage medium comprising:

[0029] Computer programs;

[0030] The computer program, when executed by the processor, implements the aforementioned working method of the thin film deposition apparatus.

[0031] Optionally, an electronic device comprising:

[0032] processor;

[0033] A memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, it implements the aforementioned operating method of the thin film deposition apparatus.

[0034] Compared with the prior art, the present invention has the following advantages:

[0035] In the thin film deposition apparatus, operating method, storage medium, and electronic device of the present invention, by using an extraction ring and a first extraction gas path on the sidewall of the reaction chamber that are only used in the process stage, and an extraction port and a second extraction gas path on the bottom wall of the reaction chamber that are only used in the cleaning stage, the cleaning efficiency of the bottom space of the chamber can be effectively improved while ensuring the deposition effect on the wafer surface. This, in turn, improves the cleaning efficiency and effect of the entire reaction chamber and its internal equipment. Furthermore, because the cleaning efficiency of each cleaning stage is very high, it can effectively avoid particulate contamination within the chamber, helping to ensure the stability of the environment inside the reaction chamber. On the other hand, this apparatus and method can significantly improve the utilization rate of cleaning gases, helping to reduce cleaning costs, reduce dependence on limited natural resources, and reduce potential environmental impacts. Attached Figure Description

[0036] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the accompanying drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0037] Figure 1 This is a schematic diagram of a conventional thin film deposition apparatus.

[0038] Figure 2 This is a schematic diagram of a thin film deposition apparatus in the cleaning stage according to the present invention;

[0039] Figure 3 This is a schematic diagram of a thin film deposition apparatus in the process stage of the present invention;

[0040] Figure 4 This is a schematic diagram of a thin film deposition apparatus according to the present invention;

[0041] Figure 5 for Figure 4 A schematic diagram of the detection device in a thin film deposition apparatus. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0043] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0044] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of the embodiments of the present invention.

[0045] Figure 1 A schematic diagram of a thin film deposition apparatus, specifically a chemical vapor deposition (CVD) apparatus, is shown. The apparatus includes a reaction chamber 100, which comprises a chamber body and a top cover 101. The chamber body includes sidewalls 102 and a bottom wall 103. A gas spray disk 110 is mounted on the top cover 101, providing process gas or cleaning gas into the reaction chamber 100. A base 120, opposite to the gas spray disk 110, is located at the bottom of the reaction chamber 100, supporting the wafer W to be processed. A heater is also located within the base 120. To facilitate wafer transfer, the apparatus also includes a lifting pin 130, with a lifting pin hole in the base 120 allowing the lifting pin 130 to move vertically within it. A vacuum ring 140 is provided on the side wall of the cavity. The vacuum ring 140 is connected to a vacuum pumping device outside the reaction cavity 100 through a vacuum air path to evacuate the inside of the reaction cavity 100 and bring it to a high vacuum state. Since thin film material needs to be deposited on the wafer W, in order to avoid process gas diffusing below the substrate 120 and forming a thin film in the lower space of the cavity, which would pollute the cavity environment, the thin film deposition apparatus places the vacuum ring 140 in the upper part of the reaction cavity 100 (near the gas spray disk 110).

[0046] Based on the above structure, during the process, process gas is supplied to the cavity through the gas spray plate 110 to perform thin film deposition on the surface of wafer W. The vacuum equipment, vacuum line, and vacuum ring 140 are in operation, and waste products such as reaction byproducts of the process gas are discharged to the outside of the cavity through the vacuum ring 140. During the cleaning process, cleaning gas is supplied to the cavity through the gas spray plate 110 to clean the inside of the reaction chamber 100. The vacuum equipment, vacuum line, and vacuum ring 140 are in operation, and waste products such as reaction byproducts of the cleaning gas are discharged to the outside of the cavity through the vacuum ring 140.

[0047] Based on the aforementioned device and operating method, since the extraction ring 140 is located in the upper part of the reaction chamber 100, most of the process gas / cleaning gas, after entering the reaction chamber 100 from the gas spray plate 110, is easily drawn away by the extraction ring 140 and cannot reach the space below the extraction ring 140, regardless of whether it is during the process or the cleaning process. Only a small portion of the gas can diffuse into the bottom space of the chamber below the extraction ring 140. For the process, the less process gas diffuses into the bottom space of the chamber, the better. However, for the cleaning process, if too little cleaning gas diffuses into the bottom space, the space below and the structural equipment therein will not be cleaned well, resulting in low overall cleaning efficiency (especially in the lower part of the chamber) and loss of machine capacity. Due to the low overall cleaning efficiency, in practical applications, workers usually increase the cleaning time to improve the cleaning effect. However, this method not only wastes a lot of cleaning gas but also causes the machine to be unable to carry out production processes due to cleaning, resulting in loss of capacity. Therefore, in practical applications, the cleaning time is generally not extended.

[0048] Furthermore, when the thin film deposition process performed by the thin film deposition apparatus is at a low operating pressure (e.g., CVD process with an operating pressure less than 100 Torr), even if a small amount of process gas diffuses into the bottom space of the cavity below the suction ring 140 to form a thin film (e.g., on the back of the base 120, or on structures such as heaters or lifting pins), the thickness of the thin film formed in the bottom space of the cavity in each process is relatively thin. Even if the cleaning process has a low cleaning effect on the bottom space of the cavity, it will not have a significant impact within a certain period of time and can basically meet the usage requirements. However, when the operating pressure of the thin film deposition process performed by the thin film deposition apparatus increases (e.g., atomic layer deposition process with an operating pressure greater than or equal to 500 Torr), more process gas diffuses into the bottom space of the cavity during the process, and a thicker thin film is deposited in the bottom space of the cavity below the suction ring 140 and on the structures located in that space in each process. Since the cleaning effect of a single cleaning process is very low, after several process and cleaning processes, a very thick thin film will accumulate. Deposited films typically exhibit high stress, which can damage equipment (such as heaters) and shorten its lifespan when it accumulates to a certain thickness. Furthermore, excessive deposition on the lifting pins 130 can cause pin jamming, easily leading to wafer slippage or even breakage when wafer transfer is required at the end of the process. However, current research and development efforts have not recognized these problems or addressed them, focusing instead on maintaining process stress during the deposition stage.

[0049] The applicant team recognized the aforementioned problems and, based on these problems, provided a thin film deposition apparatus. This apparatus features an extraction ring 140 on the sidewall of the reaction chamber 100, used only during the process stages, and an extraction port on the bottom wall of the reaction chamber 100, used only during the cleaning process. By making minor modifications to the thin film deposition apparatus, different gas exit paths with varying functions are created in different orientations. This ensures the quality of the thin film deposition on the wafer W surface while minimizing contamination of the internal environment, and significantly improves the cleaning effect and efficiency within the reaction chamber 100.

[0050] like Figure 2 and Figure 3 The diagram shows a schematic of a thin film deposition apparatus according to an embodiment of the present invention. The apparatus includes a reaction chamber 200, comprising a chamber body and a top cover 201. The chamber body includes a side wall 202 and a bottom wall 203. The reaction chamber 200 contains a gas spray disk 210 at the top and a base 220 opposite to the gas spray disk 210. The base 220 supports the wafer W to be processed and contains a heater. The gas spray disk 210 supplies various process gases and cleaning gases into the reaction chamber 200. A suction ring 230 is provided on the side wall 202 of the reaction chamber 200, communicating with a first suction gas path 240. A suction port 250 is provided on the bottom wall 203 of the reaction chamber 200, communicating with a second suction gas path 260. The vacuum ring 230 and the first vacuum passage 240 located on the side wall 202 are used only for vacuuming and venting during the process stage, while the vacuum port 250 and the second vacuum passage 260 located at the bottom are used only for vacuuming and venting during the cleaning stage.

[0051] Based on the above structure, the present invention also provides a method for operating a thin film deposition apparatus. The method includes a process stage and a cleaning stage. In the process stage, the first extraction gas path 240 is opened, the second extraction gas path 260 is closed, process gas is introduced into the interior of the reaction chamber 200 through the gas spray disk 210, and exhaust gas is discharged to the outside of the reaction chamber 200 through the extraction ring 230 and the first extraction gas path 240. In the cleaning stage, the first extraction gas path 240 is closed, the second extraction gas path 260 is opened, cleaning gas is delivered into the interior of the reaction chamber 200 through the gas spray disk 210, and exhaust gas is discharged to the outside of the reaction chamber 200 through the extraction port 250 and the second extraction gas path 260.

[0052] During the cleaning phase, with the first exhaust gas path 240 closed and only the second exhaust gas path 260 open, the cleaning gas enters the reaction chamber 200 from the top gas spray plate 210. It then diffuses sequentially from the top of the chamber to the bottom, resulting in a wider cleaning range and significantly improved cleaning efficiency for the bottom space. Simultaneously, during diffusion, the cleaning gas fully contacts all structural components along its diffusion path, achieving comprehensive cleaning of the chamber environment and all components. This improves the cleaning efficiency and effectiveness of a single cleaning phase for the entire chamber and its internal equipment. Furthermore, this method significantly increases the utilization rate of the cleaning gas, helping to reduce cleaning costs. On the other hand, because the cleaning efficiency of each phase is high, particulate contamination within the chamber is effectively avoided, contributing to the stability of the environment within the reaction chamber 200.

[0053] Based on the above-mentioned solution of the present invention, the applicant team conducted comparative experiments to verify the solution of the present invention in an atomic layer deposition apparatus for tungsten deposition. The experiments showed that to achieve the same cleaning effect, the original atomic layer deposition apparatus required 3 hours of cleaning time, while the apparatus using the solution of this application only required 0.5 hours. The solution of the present invention reduces the cleaning stage time from 3 hours to 0.5 hours, only 1 / 6 of the original. Therefore, the solution of the present invention can effectively improve the cleaning effect inside the cavity (especially the bottom) and shorten the cleaning time, which is of great significance for improving the effective operation of the machine and helps to increase production capacity in actual production.

[0054] As can be seen from the above, the present invention only requires a simple modification to the reaction chamber 200 to effectively improve the cleaning efficiency inside the reaction chamber 200, especially the cleaning efficiency of the components and equipment below the suction ring 230 (such as the back of the base 220, the heater, the lifting pin 130, etc.), resulting in a significant improvement in cleaning effect. At the same time, the improved solution of the present invention has minimal impact on the chamber itself, is relatively easy to modify, and has low modification costs (requiring only a few gas pipes and valves), making it highly practical.

[0055] Furthermore, the extraction ring 230 includes a connected extraction inlet and an extraction outlet. The extraction inlet is connected to the interior of the reaction chamber 200, and the extraction outlet is connected to the first extraction gas path 240. Optionally, the extraction inlet and the extraction outlet are connected through a gas equalization space. For example, in one embodiment, the extraction ring 230 has multiple extraction inlets uniformly distributed circumferentially on its inner side and an extraction outlet on its outer side. The extraction inlet is located below the gas spray disk 210 (e.g., at the same height as the bearing surface of the wafer W supported by the base 220), so that the process gas supplied by the gas spray disk 210 to the cavity reaches the surface of the wafer W as much as possible and is not prematurely drawn away and discharged. Compared to a scheme where the extraction inlet is flush with or higher than the gas spray disk 210, the extraction inlet in this embodiment can effectively improve the utilization efficiency of the process gas, thereby ensuring the thin film deposition quality on the surface of the wafer W.

[0056] On the other hand, in the thin film deposition apparatus and its operating method of the present invention, since a single cleaning stage can achieve a good cleaning effect on the entire cavity and its internal components, the range of the placement position of the suction ring 230 in the present invention is larger than that of the prior art, that is, the suction ring 230 has a wider range of selection for the position of suction within the reaction chamber 200. Optionally, the suction ring 230 is located in the upper cavity region of the reaction chamber 200, and the length of the upper cavity region accounts for 15% to 30% of the length of the reaction chamber 200 in the vertical direction. Based on the above scheme, even if some thin films are generated on the side or back of the base 220 during the process stage, they can be quickly removed in the subsequent cleaning stage to ensure the cleanliness and stability of the cavity environment. Of course, the placement position of the suction ring 230 is not limited to the above range. In practical applications, it can also be set according to the actual site conditions and requirements, and the present invention does not limit this.

[0057] Based on the above, regardless of the number of exhaust ports 250 opened on the bottom wall 203 of the reaction chamber 200, the cleaning gas delivered into the reaction chamber 200 by the gas spray plate 210 will diffuse from the top of the chamber to its bottom space, achieving all-round cleaning of the entire chamber and its internal components. Therefore, the present invention does not limit the number of exhaust ports 250 opened on the bottom wall 203 of the reaction chamber 200. Optionally, at least one exhaust port 250 is opened on the bottom wall 203 of the reaction chamber 200. Alternatively, when multiple exhaust ports 250 are opened on the bottom wall 203 of the reaction chamber 200, each exhaust port 250 is symmetrically arranged circumferentially so that the cleaning gas diffuses evenly to the bottom of the chamber circumferentially.

[0058] On the other hand, at least one switch valve may be provided on the first extraction air passage 240. During the process or cleaning stage, the first extraction air passage 240 can be opened or closed by opening or closing this switch valve. Alternatively, at least one switch valve may be provided on the second extraction air passage 260. During the process or cleaning stage, the second extraction air passage 260 can be opened or closed by opening or closing this switch valve.

[0059] like Figure 2 and Figure 3 As shown, in one embodiment, the thin film deposition apparatus further includes a cover ring 270 mounted on the inner wall of the reaction chamber 200, and the base 220 in the thin film deposition apparatus is liftable. In practical applications, after the wafer W is transferred to the base 220, the base 220 moves the wafer W upward, so that the cover ring 270 covers the edge of the wafer W (the cover ring 270 can be lifted / raised) to prevent the process gas and its by-products above the wafer W from contacting the back side of the wafer W, avoiding the formation of deposits in non-process areas (such as the back side of the wafer W). At the same time, since the cover ring 270 covers the edge of the wafer W, it can press down the edge of the wafer W to prevent warping and other phenomena, thus limiting the position of the wafer W.

[0060] Based on the above, the working method of the thin film deposition apparatus of the present invention further includes: in the cleaning stage, the base 220 is located in a first position and the base 220 is in contact with the cover ring 270; or, in the cleaning stage, the base 220 is located in a second position and the base 220 is separated from the cover ring 270.

[0061] During the cleaning phase, the base 220 is typically at a high temperature (it contains an internal heater). When the base 220 is in the first position, it is in full contact with the cover ring 270, which raises the temperature of the cover ring 270, thereby improving the cleaning effect / efficiency of the cleaning gas. When the base 220 is in the second position, it separates from the cover ring 270, and the cover ring 270 rests on the inner wall of the reaction chamber 200, fully exposing the cover ring 270 to the cleaning gas environment. This also exposes the area of ​​the base 220 covered by the cover ring 270, enabling comprehensive cleaning of both the cover ring 270 and the base 220.

[0062] Optionally, in the initial stage of the cleaning phase, the base 220 is located in the first position. After cleaning in this state for a certain period of time, the base 220 is then moved to the second position. In this way, in the initial stage of the cleaning phase, the cover ring 270 contacts the base 220, causing the temperature of the cover ring 270 to rise. The cleaning gas then efficiently cleans the cover ring 270. After cleaning the main body of the cover ring 270 and the base 220, the base 220 is lowered to the second position to separate from the cover ring 270. This allows for the cleaning of previously unexposed parts of the cover ring 270 and the base 220, achieving thorough removal of deposits. Simultaneously, the cover ring 270 retains residual heat immediately after separation, which to some extent ensures the cleaning effect of previously unexposed parts (e.g., the back side). It should be noted that the arrangement of the base 220 in the cleaning phase is not limited to the above-described manner. In other embodiments, other arrangements can be selected, and this invention does not limit this.

[0063] On the other hand, the thin film deposition apparatus may also include a detection device 310 (i.e., an Endpoint Detector, or EPD for short), which is used to detect the cleanliness / cleanliness efficiency within the reaction chamber 300. For example, such as... Figure 4 and Figure 5 As shown, in one embodiment, the thin film deposition apparatus includes two reaction chambers 300 (STN1 and STN2 in the figure). A common pipeline is provided on the connecting sidewall of the two reaction chambers 300. A vacuum ring is provided on the sidewall of each of the two reaction chambers 300, and both vacuum rings are connected to the common pipeline. Each of the two reaction chambers 300 has a pre-reserved interface for a second vacuum path, i.e., a vacuum port, at its bottom. The vacuum ports of the two reaction chambers 300 are connected to an external vacuum terminal through two pre-stage pipelines. Simultaneously, the two pre-stage pipelines are isolated by ISO valves (TV gas path in the figure), and each of the two pre-stage pipelines is equipped with a switching valve (V1 and V2). In this embodiment, a detection device 310 is externally connected to the common pipeline shared by the two reaction chambers 300 to detect the cleanliness of the two reaction chambers 300. A switching valve (V3 and V4) is provided on each side of the detection device 310 on its external connection path.

[0064] Based on the above, the operating method of the thin film deposition apparatus of the present invention further includes: detecting the cleanliness status of the reaction chamber 300 by means of the detection device 310.

[0065] For example, such as Figure 4 and Figure 5 As shown, after a period of time during the cleaning phase, the switching valves V3 and V4 at both ends of the detection device 310 are opened, while the switching valves V1 and V2 are closed, in order to monitor the cleaning status inside the cavity at this time, and thus confirm whether the cleaning of the cavity has reached its end.

[0066] It should be noted that the thin film deposition apparatus equipped with the detection device 310 is not limited to the dual-cavity structure shown in the figure; it can also be a single-cavity structure or a structure with other numbers of cavities, and the present invention does not impose any limitations on this. Furthermore, for different thin films deposited using different processes, the features to be detected by the detection device 310 will differ. In practical applications, a suitable detection device 310 and feature can be selected according to requirements, and the present invention does not impose any limitations on this. For example, in one embodiment, a tungsten film layer is deposited on the wafer surface during the process stage. During the cleaning stage, a fluorine-containing gas is used as the cleaning gas for cleaning. The deposited tungsten film is removed by the reaction of fluorine ions generated by the fluorine-containing gas with the tungsten film layer. WF6 is generated during this reaction. In practical applications, the partial pressure of WF6 can be tested using the detection device 310 to determine the cleanliness state within the cavity.

[0067] On the other hand, the thin film deposition apparatus may be equipped with one or more detection devices 310. Optionally, the detection device is connected to the first exhaust gas path; and / or, the detection device 310 is connected to the second exhaust gas path; and / or, the thin film deposition apparatus further includes a third exhaust gas path connected to the interior of the reaction chamber 300, and the detection device 310 is connected to the third exhaust gas path. In practical applications, the detection device 310 can be externally connected to the corresponding exhaust gas path. During detection, all the gas in the reaction chamber 300 is discharged from the gas path where the detection device 310 is located, and the other gas paths are turned off. On the other hand, when the interior of the reaction chamber 300 is under high temperature and high pressure, the detection device 310 can still realize real-time detection of its internal cleanliness.

[0068] It should be noted that the thin film deposition apparatus of the present invention is not limited to the above-mentioned chemical vapor deposition apparatus. In other embodiments, it can also be other devices with other structures, and the present invention does not limit this. For example, in one embodiment, the thin film deposition apparatus is an atomic layer deposition apparatus. Similarly, the present invention's solution of providing a suction ring 230 for the process stage on the side wall 202 of the reaction chamber 200 and opening a suction port 250 for the cleaning stage on its bottom wall 203 is not limited to the above-mentioned thin film deposition apparatus. It can also be applied to any other chamber where the suction ring 230 is located in the upper part of the cavity (all of which would face the problem of low cleaning efficiency at the bottom of the base 220). That is, the technical solution of the present invention has wide applicability.

[0069] Based on the same inventive concept, the present invention also provides a storage medium comprising: a computer program; wherein, when executed by a processor, the computer program implements the aforementioned operating method of the thin film deposition apparatus. For example, in the process stage, the processor executes the computer program to open the passages of the suction ring 230 and the first suction gas path 240 to deposit a thin film on the surface of the wafer W; in the cleaning stage, the processor executes the computer program to open the passages of the suction port 250 and the second suction gas path 260 to clean the interior of the reaction chamber 200.

[0070] Based on the same inventive concept, the present invention also provides an electronic device, comprising: a processor; and a memory, wherein the memory stores a computer program, which, when executed by the processor, implements the aforementioned operating method of the thin film deposition apparatus. Optionally, the electronic device may be a controller.

[0071] In summary, the thin film deposition apparatus, operating method, storage medium, and electronic device of the present invention utilize a suction ring 230 and a first suction gas path 240 on the sidewall 202 of the reaction chamber 200, which are only used in the process stage, and a suction port 250 and a second suction gas path 260 on the bottom wall 203 of the reaction chamber 200, which are only used in the cleaning stage. These features ensure the deposition effect on the wafer W surface while effectively improving the cleaning efficiency of the bottom space within the chamber (mainly below the suction ring 230), thereby improving the overall cleaning efficiency and effect of the reaction chamber 200 and its internal equipment. Furthermore, due to the high cleaning efficiency of each cleaning stage, particulate contamination within the chamber is effectively avoided, contributing to the stability of the environment within the reaction chamber 200. On the other hand, this apparatus and method significantly improve the utilization rate of cleaning gases, helping to reduce cleaning costs.

[0072] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A method of operating a thin film deposition apparatus, the thin film deposition apparatus comprising a reaction chamber, the reaction chamber comprising a gas spray disk located at the top and a base disposed opposite to the gas spray disk, characterized in that, A suction ring is provided on the side wall of the reaction chamber, and the suction ring is connected to a first suction air passage. A suction port is provided on the bottom wall of the reaction chamber, and the suction port is connected to a second suction air passage. The working method includes a process stage and a cleaning stage. In the process stage, the first exhaust gas path is opened, the second exhaust gas path is closed, the process gas is introduced into the interior of the reaction chamber through the gas spray plate, and the exhaust gas is discharged to the outside of the reaction chamber through the exhaust ring and the first exhaust gas path. During the cleaning phase, the first exhaust air path is closed, the second exhaust air path is opened, and cleaning gas is delivered to the interior of the reaction chamber through the gas spray plate, and exhaust gas is discharged to the outside of the reaction chamber through the exhaust port and the second exhaust air path.

2. The operating method of the thin film deposition apparatus as described in claim 1, characterized in that, The suction ring is located below the gas spray disk.

3. The operating method of the thin film deposition apparatus as described in claim 1, characterized in that, The suction ring is located in the upper cavity region of the reaction chamber, and the length of the upper cavity region accounts for 15% to 30% of the length of the reaction chamber in the vertical direction.

4. The operating method of the thin film deposition apparatus as described in claim 1, characterized in that, The thin film deposition apparatus further includes a cover ring mounted on the inner wall of the reaction chamber, the base is liftable, and the operating method further includes: During the cleaning phase, the base is in the first position and is in contact with the cover ring; Alternatively, during the cleaning phase, the base is in a second position, and the base is separated from the cover ring.

5. The operating method of the thin film deposition apparatus as described in claim 4, characterized in that, At the initial stage of the cleaning phase, the base is located in the first position.

6. The method of operating the thin film deposition apparatus as described in claim 1, characterized in that, The thin film deposition apparatus further includes a detection device, and the operating method further includes: The cleanliness of the reaction chamber is detected by the detection device.

7. The operating method of the thin film deposition apparatus as described in claim 6, characterized in that, The detection device is connected to the first air extraction path; And / or, the detection device is connected to the second air extraction path; And / or, the thin film deposition apparatus further includes a third exhaust gas path communicating with the interior of the reaction chamber, and the detection device is communicated with the third exhaust gas path.

8. The method of operating the thin film deposition apparatus as described in claim 1, characterized in that, At least one air extraction port is provided on the bottom wall of the reaction chamber.

9. The method of operating the thin film deposition apparatus as described in claim 1, characterized in that, The bottom wall of the reaction chamber has multiple air extraction ports, and each air extraction port is symmetrically arranged circumferentially.

10. The method of operating the thin film deposition apparatus as described in claim 1, characterized in that, At least one switch valve is installed in the first air extraction line.

11. The method of operating the thin film deposition apparatus as described in claim 1, characterized in that, At least one switch valve is installed in the second air extraction line.

12. The method of operating the thin film deposition apparatus as described in claim 1, characterized in that, The thin film deposition apparatus is an atomic layer deposition apparatus.

13. A thin film deposition apparatus for performing the operating method of the thin film deposition apparatus as described in any one of claims 1 to 12, characterized in that, The thin film deposition apparatus includes: The reaction chamber includes a gas spray plate at the top and a base opposite to the gas spray plate. A suction ring is provided on the side wall of the reaction chamber and is connected to a first suction gas path. A suction port is provided on the bottom wall of the reaction chamber and is connected to a second suction gas path.

14. A storage medium, characterized in that, The storage medium includes: Computer programs; When the computer program is executed by the processor, it implements the operating method of the thin film deposition apparatus as described in any one of claims 1 to 12.

15. An electronic device, characterized in that, The electronic device includes: processor; A memory, wherein a computer program is stored thereon, which, when executed by the processor, implements the operating method of the thin film deposition apparatus as described in any one of claims 1 to 12.

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