Crystal growth apparatus and method of crystal growth

Abstract

The application provides a crystal growth device and a crystal growth method, and relates to the technical field of semiconductors, and aims to solve the problem that it is difficult to control the relationship between the step flow and the solution flow when a crystal is grown by using a liquid phase growth method. The crystal growth device comprises a crucible and a seed crystal system. The crucible is used for containing a raw material solution, and the raw material solution is used for growing a crystal. The seed crystal system comprises a plurality of mounting parts used for mounting seed crystals respectively. The seed crystal system can rotate relative to the crucible. The plurality of mounting parts are arranged around the rotation center of the seed crystal system, and the distances from the centers of the plurality of mounting parts to the rotation center of the seed crystal system are equal or approximately equal. The crystal growth device can improve the consistency of the relationship between the step flow and the solution flow of the plurality of seed crystals when the crystal is grown, facilitate the control of the relationship between the step flow and the solution flow of each seed crystal, and improve the production efficiency.

Description

Technical Field

[0001] This application relates to semiconductor technology, and more particularly to a crystal growth apparatus and a method for crystal growth. Background Technology

[0002] Crystals can be grown using methods such as physical vapor transport (PVT) and liquid phase growth (LPG). Among these methods, crystals grown by liquid phase growth can achieve lower defect density and improve the utilization rate of the substrate for crystal formation compared to crystals grown by other methods such as physical vapor transport (PVT).

[0003] Liquid-phase growth involves uniformly dissolving the elements that make up the crystal in a solvent (co-solvent) to form a solution. This solution creates a supersaturated state of the crystal-forming elements, causing them to precipitate in crystalline form, thus growing the crystal. To achieve single-crystal growth, a seed crystal must be used to induce growth. The seed crystal is typically suspended or attached to a graphite shaft and in contact with the solvent.

[0004] When growing crystals using liquid-phase growth methods, it is necessary to control the relative rotation between the seed crystal and the solution to facilitate the transport of crystal-forming elements from the solution to the seed crystal surface, thereby improving the growth rate and quality. However, the rotation between the seed crystal and the solvent, coupled with naturally occurring thermal convection in the solution, results in a highly complex flow field within the solvent. This complex and variable flow field can easily lead to morphological defects such as step aggregation and flux inclusions.

[0005] Therefore, it is evident that the flow of the solution is difficult to control to obtain a flow favorable for crystal growth, making it very difficult to grow crystals using liquid-phase growth methods. Furthermore, existing liquid-phase growth methods only suspend a single seed crystal in the flux to induce crystal growth, meaning only one ingot can be produced at a time, resulting in low production efficiency. Summary of the Invention

[0006] This application provides a crystal growth apparatus and a crystal growth method to solve the problem of low production efficiency in liquid phase growth of crystals.

[0007] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0008] In a first aspect, embodiments of this application provide a crystal growth apparatus, which includes a crucible and a seed crystal system. The crucible is used to contain a raw material solution, which is used to grow crystals. The seed crystal system includes multiple mounting parts, which are used to mount multiple seed crystals respectively. The seed crystal system is rotatable relative to the crucible, and the multiple mounting parts are arranged around the rotation center of the seed crystal system. The distances from the centers of the multiple mounting parts to the rotation center of the seed crystal system are equal or approximately equal.

[0009] When the seed crystal system and the crucible rotate relative to each other, the raw material solution in the crucible will form an outward or inward flow, that is, the flow direction of the raw material solution relative to the seed crystal includes a direction roughly along the radial direction of the crucible. Therefore, the relative motion between the seed crystal and the raw material solution mainly includes two parts: one is the relative motion generated by the relative rotation of the seed crystal and the crucible in the seed crystal system, and the other is the motion of the raw material solution relative to the seed crystal via inward or outward flow.

[0010] The distances from the centers of multiple mounting sections to the rotation center of the seed crystal system are equal or approximately equal. Clearly, the multiple seed crystals will not overlap. Therefore, after being installed in the mounting sections, the multiple seed crystals are all offset from the rotation center, meaning they are all located on one side of the rotation center. Thus, regardless of whether the solution flow direction includes inward or outward flow, the flow direction of the raw material solution in each region on the surface of a single seed crystal remains approximately consistent.

[0011] Since the distances from the centers of multiple mounting sections to the rotation center of the seed crystal system are equal or approximately equal, the areas on the surfaces of multiple seed crystals that are at the same distance from the rotation center are approximately equal in terms of the relative motion speed generated by the relative rotation.

[0012] Therefore, the relationship between the direction of the step flow of the seed crystal and the solution flow (such as their directions and relative flow velocities) can be kept approximately the same. Thus, the relationship between the step flow direction of multiple seed crystals and the solution convection direction can be easily controlled, which is beneficial for achieving consistency in the relationship between multiple seed crystals and the solution flow direction, thereby improving crystal quality while simultaneously growing crystals from multiple seed crystals.

[0013] In one possible embodiment of the first aspect, the seed crystal system includes a tray with a groove on the surface of the tray facing the crucible, and a mounting portion including a groove; the groove is used to hold the seed crystal. Thus, the seed crystal can be mounted via the groove, facilitating its installation. Furthermore, mounting the seed crystal in the groove also protects its sidewalls, preventing adverse effects on the grown crystal from contact with the raw material solution.

[0014] In one possible implementation of the first aspect, the seed crystal system further includes graphite paper, which is used to fix the seed crystal in the groove. This allows for easy adjustment of the surfaces of multiple seed crystals via the graphite paper, ensuring that the surfaces of the multiple seed crystals are on the same plane and improving the consistency of crystal growth from the multiple seed crystals.

[0015] In one possible implementation of the first aspect, the seed crystal system further includes a support frame and a plurality of connecting rods located between a plurality of mounting portions and the support frame, with the mounting portions closer to the crucible than the support frame; one end of each connecting rod is connected to a mounting portion, and the other end of the connecting rod is connected to the support frame. Thus, by connecting the mounting portions with connecting rods, each mounting portion can be installed relatively independently, making it easier to ensure that the seed crystal mounted on the mounting portion has the same degree of contact with the raw material solution.

[0016] In one possible implementation of the first aspect, the seed crystal system further includes a plurality of first driving mechanisms; the first driving mechanisms are connected to connecting rods, and the first driving mechanisms are used to drive the mounting portion connected to the connecting rods to rotate. Thus, by driving the mounting portion to rotate through the first driving mechanisms, the step flow direction of the seed crystal can be adjusted during crystal growth, or the seed crystal can be kept rotating to improve the quality of the grown crystal.

[0017] In one possible implementation of the first aspect, the seed crystal system further includes a second driving mechanism; the second driving mechanism is connected to the support frame and is used to drive the support frame to rotate about a rotation center. Thus, the second driving mechanism can drive the support frame to rotate about the rotation center, thereby causing the seed crystal mounted on the seed crystal system to move relative to the raw material solution, and crystals to grow on the seed crystal.

[0018] In one possible embodiment of the first aspect, the crystal growth apparatus includes a column; one end of the column is connected to the bottom of a crucible, and the column extends towards the seed crystal system in the thickness direction of the bottom of the crucible; a plurality of mounting parts are arranged around the column in the projection of the bottom of the crucible; or, one end of the column is connected to the seed crystal system, the column extends towards the crucible in the thickness direction of the bottom of the crucible, and a plurality of mounting parts surround the column. Because of the column, while maintaining the same liquid level in the raw material solution, the column can reduce the amount of raw material solution contained in the crucible, saving production costs. Furthermore, since the plurality of mounting parts surround the column, i.e., multiple seed crystals are arranged around the column, the elements for crystal growth can also be provided in the middle of the raw material solution by the column, improving the uniformity of crystal growth.

[0019] In one possible implementation of the first aspect, a first heating device and a second heating device are further included. The first heating device is disposed around and surrounds the crucible, and the second heater is disposed on the bottom of the crucible on the side opposite to the seed crystal system. Thus, the first heating device heats the crucible around it, resulting in uniform circumferential heating. However, the central region of the crucible is heated less. By using the second heater to heat from the bottom of the crucible, the heating intensity in the central region can be increased, improving the uniformity of heating the crucible.

[0020] In one possible implementation of the first aspect, the mounting section includes a mounting mark indicating the mounting position of the seed crystal on the mounting section. Thus, after the seed crystal is positioned and mounted according to the mounting mark, the direction of the seed crystal's step flow can be set to a preset direction, improving crystal growth efficiency.

[0021] In a second aspect, embodiments of this application provide a crystal growth method, which is applied to a crystal growth apparatus as described in any one of the first aspects, comprising: installing a plurality of seed crystals respectively to a plurality of mounting portions of a seed crystal system of the crystal growth apparatus; bringing the plurality of seed crystals into contact with a raw material solution in a crucible of the crystal growth apparatus; rotating the seed crystal system and the crucible relative to each other to grow a crystal on the plurality of seed crystals.

[0022] Therefore, even when the flow direction of the raw material solution includes both inward and outward flow, the flow direction of the raw material solution in various regions of a single seed crystal surface can remain approximately consistent. Simultaneously, regions on the surfaces of multiple seed crystals that are equidistant from the center of rotation also maintain approximately the same relationship with the solution flow (e.g., relative flow velocity). This improves the consistency of the solution flow direction across various regions of a single seed crystal surface and the uniformity of the relationship between multiple seed crystals and the solution flow direction, thereby improving the quality of crystals grown simultaneously from multiple seed crystals and increasing production efficiency.

[0023] In one possible implementation of the second aspect, the angle between the direction of the step flow of the multiple seed crystals and the line connecting the center of the seed crystal and the rotation center of the seed crystal system is equal or approximately equal. Therefore, the relative flow relationship between the direction of the step flow of the multiple seed crystals and the flow direction of the raw material solution can also remain substantially the same, thereby facilitating the unified control of the relationship between the step flow of the multiple seed crystals and the flow of the raw material solution, and improving the consistency of simultaneous crystal growth from multiple seed crystals.

[0024] In one possible implementation of the second aspect, the direction of the step flow of the seed crystal is perpendicular or parallel to the line connecting the center of the seed crystal and the center of rotation.

[0025] When the direction of the step flow of the seed crystal is perpendicular to the line connecting the center of the seed crystal and the center of rotation, since the angle between the direction of the step flow of the seed crystal and the line connecting the center of the seed crystal and the center of rotation is 90°, there is a large relative flow velocity between the seed crystal and the raw material solution in the direction opposite to the direction of the step flow of the seed crystal, which helps to improve the quality of the seed crystal grown from the seed crystal.

[0026] When the direction of the step flow of the seed crystal is parallel to the line connecting the center of the seed crystal and the center of rotation, the relative flow between the seed crystal and the raw material solution in a direction perpendicular to the line connecting the center of the seed crystal and the center of rotation, and the direction of the step flow, is at an angle of 0°. The relative rotation of the seed crystal system and the crucible will cause the raw material solution to generate inward or outward flow. Therefore, the direction of the inward or outward flow can be opposite to the direction of the step flow of the seed crystal. That is, the main influencing factor for the growth of crystals on multiple seed crystals is the inward or outward flow of the raw material solution, which helps to improve the uniformity of the crystals grown from multiple seed crystals.

[0027] In one possible implementation of the second aspect, when the direction of the step flow of the seed crystal is perpendicular to the line connecting the center of the seed crystal and the rotation center, the seed crystal system rotates in the same direction; or, when the direction of the step flow of the seed crystal is parallel to the line connecting the center of the seed crystal and the rotation center, the seed crystal system periodically repeats clockwise and counterclockwise rotation.

[0028] When the direction of the step flow in the seed crystal is perpendicular to the line connecting the center of the seed crystal and the center of rotation, and the seed crystal system rotates in the same direction, the direction of the step flow in the seed crystal and the flow direction of the raw material solution can always maintain a large relative velocity in opposite directions, which is beneficial to improving the quality of the seed crystal growth. Furthermore, controlling the seed crystal system to always rotate in the same direction is easy to implement, and the control logic is simple.

[0029] When the direction of the step flow of the seed crystal is parallel to the line connecting the center of the seed crystal and the center of rotation, the seed crystal system can periodically repeat clockwise and counterclockwise rotations. This allows the influence of the flow of the raw material solution perpendicular to the step flow direction of the seed crystal on crystal growth to cancel each other out. In other words, only the inward or outward flow of the raw material solution affects crystal growth. This helps to control crystal growth by generating only inward or outward flow, thus improving the controllability of crystal growth.

[0030] In one possible implementation of the second aspect, at least one mounting portion is driven to rotate about the center of the mounting portion. This allows the seed crystal to be rotated during crystal growth, changing the direction of the step flow of the seed crystal and thus helping to improve the efficiency of crystal growth.

[0031] In one possible implementation of the second aspect, at least two seed crystals are mounted on corresponding mounting portions using graphite paper; the thickness of the graphite paper corresponding to the at least two seed crystals is equal or unequal, so that the surfaces of the at least two seed crystals are flush. Thus, by making the surfaces of the at least two seed crystals flush using graphite paper, the contact between the at least two seed crystals and the raw material solution is made identical, increasing the consistency of the grown crystals. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the structure of a crystal growth apparatus provided in an embodiment of this application;

[0033] Figure 2 This is a schematic diagram of another crystal growth apparatus provided in an embodiment of this application;

[0034] Figure 3 This is a partial structural schematic diagram of a seed crystal system provided in an embodiment of this application;

[0035] Figure 4 This application provides a schematic diagram showing the position of a seed crystal installed behind a crystal system.

[0036] Figure 5 A schematic diagram illustrating the installation of a seed crystal in a seed crystal system, provided as an embodiment of this application;

[0037] Figure 6 This is a schematic diagram of a seed crystal system provided in an embodiment of this application;

[0038] Figure 7 This is a schematic diagram of another seed crystal system provided in an embodiment of this application;

[0039] Figure 8 This is a schematic diagram of another crystal growth apparatus provided in an embodiment of this application;

[0040] Figure 9 This is a schematic diagram of the structure of another crystal growth apparatus provided in the embodiments of this application;

[0041] Figure 10 A flowchart illustrating a crystal growth method provided in an embodiment of this application;

[0042] Figure 11 This is a schematic diagram showing the direction of the step flow after the seed crystal is installed in the seed crystal system, as provided in an embodiment of this application. Detailed Implementation

[0043] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by those skilled in the art. The terms "first," "second," "third," and similar words used in this application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include one or more of that feature. In the description of embodiments in this application, unless otherwise stated, "a plurality of" means two or more.

[0044] The directional terms such as “left,” “right,” “up,” and “down” are defined relative to the orientation of the device shown in the accompanying drawings. It should be understood that these directional terms are relative concepts and are used for relative description and clarification. They can change accordingly depending on the orientation of the chip or semiconductor package structure.

[0045] Please see Figure 1 , Figure 1 A crystal growth apparatus 100 is provided in an embodiment of this application. The apparatus 100 includes a seed crystal system 110 and a crucible 120. The seed crystal system 110 and the crucible 120 are rotatable relative to each other. The seed crystal system 110 is used to mount a seed crystal 130, and the crucible 120 is used to contain a raw material solution 140, which includes elements that make up the crystal.

[0046] During crystal growth, a seed crystal 130 is mounted on a seed crystal system 110 and comes into contact with the raw material solution 140 in a crucible 120. The relative rotation of the seed crystal system 110 and the crucible 120 allows the raw material solution 140 to flow relative to the seed crystal 130, ensuring a uniform distribution of the crystal-forming elements within the solution and maintaining a consistent growth environment around the seed crystal 130. Furthermore, the direction of solution convection during crystal growth can be controlled by electromagnetic stirring, heating the raw material solution 140, etc., to improve crystal growth efficiency and quality.

[0047] Typically, solution convection is either outward or inward. Outward flow refers to the flow direction of the solution at the surface of the raw material solution 140 from the center of the crucible 120 towards the side wall of the crucible 120. Figure 1 As indicated by the dashed arrow, outward flow refers to the flow direction of the solution at the surface of the raw material solution 140 from the side wall of the crucible 120 towards the center of the crucible 120. The direction D of the step flow of the seed crystal 130 is along the same direction, for example, as shown... Figure 1 As shown by the solid arrow in the image.

[0048] The relationship between the direction D of the step flow and the direction of solution flow is one of the main factors affecting crystal growth. Understandably, when using... Figure 1 When the crystal growth apparatus 100 shown grows a crystal, in the regions where the seed crystal 130 is located on both sides of the rotation center, the direction D of the step flow is opposite to the direction of the solution flow. That is to say, during the crystal growth process, the relationship between the direction D of the step flow and the direction of the solution flow in the regions where the seed crystal 130 is located on both sides of the rotation center is opposite, which will affect the uniformity of crystal growth.

[0049] In some implementations, the inconsistency between the step flow direction D and the solution flow direction in different regions of the seed crystal 130 can be mitigated by adjusting the solution convection direction and solution flow velocity. However, if multiple crystals are grown simultaneously, the relationship between the solution flow direction and velocity in the regions of multiple seed crystals 130 and the step flow direction D of the seed crystal 130 is difficult to control and achieve consistency, making it difficult to achieve high-quality simultaneous growth of multiple crystals. Furthermore, adjusting the solution convection direction and solution flow velocity can cause temperature fluctuations in the solution, which is detrimental to stable crystal growth.

[0050] Please see Figure 2 , Figure 2 Another crystal growth apparatus 100 provided in this application embodiment is illustrated using silicon carbide as the grown crystal for ease of explanation. However, it is understood that this application is also applicable to the growth of other types of crystals, such as gallium nitride.

[0051] The apparatus 100 includes a seed crystal system 110 and a crucible 120. The crucible 120 is used to contain the raw material solution 140, and the seed crystal system 110 is used to mount multiple seed crystals 130. The seed crystals 130 can be polymorphic, and the deviation angle of the seed crystals 130 can be greater than or equal to 0° and less than or equal to 5°, for example, 0°, 0.5°, 2°, 3°, or 5°.

[0052] The feed solution 140 is used to grow a crystal. The feed solution 140 contains the elements that make up the crystal to be grown and forms a supersaturated state. For example, when the crystal to be grown is silicon carbide, the feed solution 140 contains carbon and silicon elements.

[0053] The material of crucible 120 can be selected to supply elements that constitute the crystals to the raw material solution 140; for example, crucible 120 can be a graphite crucible. Understandably, crucible 120 can also be made of other materials, in which case an additional carbon source is required to form the raw material solution 140. For example, carbon-containing materials such as silicon carbide, methane, ethane, and propane can be used to provide carbon to the raw material solution 140.

[0054] The raw material solution 140 may contain only the elements that make up the crystal to be grown, or it may contain other elements. For example, a silicon alloy may be used as a solvent to provide silicon to the raw material solution 140. The silicon alloy may be a silicon-chromium alloy, a silicon-titanium alloy, a silicon-aluminum alloy, etc.

[0055] Understandably, the crystal growth apparatus 100 may include a heating device 150 for heating the crucible 120, thereby keeping the raw material solution 140, which includes the crystal constituent elements, in a molten state. The heating method of the heating device 150 may be induction heating or other commonly used heating methods such as resistance heating. During crystal growth, the raw material solution 140 can be heated to a temperature range of 1600℃ to 2200℃ by the heating device 150. For example, the lowest temperature the raw material solution 140 can be heated to can be 1600℃, 1700℃, or 1800℃, and the highest temperature the raw material solution 140 can be heated to can be 2000℃, 2100℃, or 2200℃.

[0056] During crystal growth, the surface of the seed crystal 130 comes into contact with the raw material solution 140 in the crucible 120. The seed crystal system 110 and the crucible 120 can rotate relative to each other, so the raw material solution 140 can generate inward or outward flow, that is, the flow direction of the solution relative to the seed crystal includes a direction approximately radial to the crucible 120, and the raw material solution 140 moves relative to the surface of the seed crystal 130, thereby causing crystal growth on the surface of the seed crystal 130.

[0057] Please see Figure 3 , Figure 3 This is a partial structural schematic diagram of a seed crystal system 110 provided in an embodiment of this application. The seed crystal system 110 includes a plurality of mounting portions 111, which are used to respectively mount a plurality of seed crystals 130. As mentioned above, the seed crystal system 110 is capable of rotating relative to the crucible 120, and therefore the seed crystal system 110 has a rotation center O.

[0058] Understandably, the rotation center O of the seed crystal system 110 is a fixed point on the plane where the multiple seed crystals 130 are located when the seed crystal system 110 rotates. For example, please refer to... Figure 2 and Figure 3 The seed crystal system 110 may include a tray 112 and a support rod 113, with multiple mounting parts 111 disposed on the tray 112. If the tray 112 is circular, the support rod 113 may be connected to the center of the tray 112. The surface of the tray 112 is perpendicular to the extension direction of the support rod 113. In this case, rotating the support rod 113 can drive the tray 112 to rotate, and the rotation center O of the tray 112 is the center of the tray 112.

[0059] Please continue to combine Figure 2 and Figure 3Multiple mounting portions 111 are arranged around the rotation center O of the seed crystal system 110. The distances from the centers of the multiple mounting portions 111 to the rotation center O of the seed crystal system 110 are equal or approximately equal. That is, when multiple seed crystals 130 are mounted on multiple mounting portions 111, the centers of each seed crystal 130 are distributed on a circumference at a certain distance from the rotation center. The centers of the multiple mounting portions 111 can be evenly spaced on a circumference at a certain distance from the rotation center. The number of mounting portions 111 can be 2, 3, 4, etc.

[0060] The shape of the mounting portion 111 can be similar to the shape of the seed crystal 130; that is, when the seed crystal 130 is circular, the mounting portion 111 can also be circular. The center of the mounting portion 111 can be its geometric center. For example, when the shape of the mounting portion 111 is circular, the center of the mounting portion 111 is the center of that circle. The center of the seed crystal 130 can also be its geometric center. In this case, after the seed crystal 130 is mounted on the mounting portion 111, the center of the mounting portion 111 and the center of the seed crystal 130 coincide.

[0061] The distances from the centers of the multiple mounting parts 111 to the rotation center O of the seed crystal system 110 are approximately equal. This means that the deviation between the maximum and minimum distances from the centers of the multiple mounting parts 111 to the rotation center O of the seed crystal system is within a certain range. For example, the difference between the maximum and minimum distances is less than a proportion of the minimum distance, such as 1 / 10, 1 / 20, or 1 / 30. Understandably, this deviation could be caused by manufacturing or assembly errors or other reasons.

[0062] When the seed crystal system 110 and the crucible 120 rotate relative to each other, the raw material solution 140 in the crucible 120 will form an outward or inward flow, that is, the flow direction of the raw material solution 140 relative to the seed crystal 130 includes a direction approximately along the radial direction of the crucible 120. The relative motion between the seed crystal 130 and the raw material solution 140 can mainly include two parts: one is the relative motion generated by the relative rotation of the seed crystal 130 on the seed crystal system 110 and the crucible 120, and the other is the movement of the inward or outward flow of the raw material solution 140 relative to the seed crystal 130.

[0063] Please see Figure 4 The mounting section 111 is used to mount the seed crystal 130. The centers of the multiple mounting sections 111 are equidistant or approximately equidistant from the rotation center O of the seed crystal system 110. This ensures that the multiple seed crystals 130 do not overlap, and that the multiple seed crystals 130 are all offset from the rotation center O. Therefore, regardless of whether the solution flow direction includes inward or outward flow, the flow direction of the raw material solution 140 in each region on the surface of a single seed crystal 130 remains approximately consistent.

[0064] Since the distances from the centers of the multiple mounting portions 111 to the rotation center O of the seed crystal system 110 are equal or approximately equal, the areas on the surfaces of the multiple seed crystals 130 that are at the same distance from the rotation center O are equal for the relative motion speed generated by the relative rotation.

[0065] Therefore, the relationship between the step flow direction D of the seed crystal 130 and the solution flow (such as the direction between the two and the relative flow velocity) can also be kept approximately the same. Thus, the relationship between the step flow direction of multiple seed crystals 130 and the solution convection direction can be easily controlled, which is beneficial to achieving consistency in the relationship between multiple seed crystals 130 and the solution flow direction, thereby improving the quality of crystals grown simultaneously from multiple seed crystals 130.

[0066] Please continue reading Figure 3 The mounting portion 111 may include a mounting mark 1111, which indicates the mounting position of the seed crystal 130 on the mounting portion 111. Understandably, when growing a crystal on the seed crystal 130, crystal growth primarily occurs along the direction of the step flow. Therefore, when mounting the seed crystal 130 on the mounting portion 111, the direction of the step flow of the seed crystal 130 can be determined by the mounting mark 1111. For example, the seed crystal 130 may include a notch, and the mounting mark 1111 is a protrusion matching the shape of the notch. Thus, after mounting the seed crystal 130 on the mounting portion 111, the notch of the seed crystal 130 is aligned with the mounting mark 1111, thereby ensuring that the direction of the step flow of the seed crystal 130 is a preset direction.

[0067] As previously described, the seed crystal system 110 may include a tray 112. The seed crystal 130 may be mounted on the tray 112 via a mounting part 111. It is understood that multiple mounting parts 111 may be provided on one tray 112; or one mounting part 111 may be provided on one tray 112, that is, one seed crystal system 110 may include multiple trays 112.

[0068] Understandably, the surface of the tray 112 facing the crucible 120 can be a plane, and the seed crystal 130 is disposed on this plane. That is, a mounting part 111 can be a region on the surface of the tray 112, and each region is provided with a corresponding seed crystal 130.

[0069] Please continue reading Figure 3 and combined Figure 2The tray 112 of the seed crystal system 110 may also include a groove 114, which is disposed on the surface of the tray 112 facing the crucible 120. In this case, one groove 114 can form a mounting portion 111, i.e., one mounting portion 111 includes one groove 114 for mounting a seed crystal 130. Understandably, one groove 114 can mount one seed crystal 130. The shape of the groove 114 is similar to the shape of the seed crystal 130. After the seed crystal 130 is mounted in the groove 114, one surface of the seed crystal 130 faces the crucible 120, so that the surface of the seed crystal 130 can contact the raw material solution 140 in the crucible 120 and grow a crystal. The surface of the seed crystal 130 facing the crucible 120 may protrude from the surface of the tray 112, thus allowing the seed crystal 130 to contact the raw material solution 140 during crystal growth, while the tray 112 does not contact the raw material solution 140, preventing crystal precipitation on the tray 112 and reducing the impact on crystal growth.

[0070] Please see Figure 5 , Figure 5 This is a schematic diagram illustrating the installation of a seed crystal 130 in a seed crystal system 110 according to an embodiment of this application. The seed crystal system 110 also includes graphite paper 115, which is used to fix the seed crystal 130 in a groove 114. It is understood that the thickness of each seed crystal 130 may be different, and the depth of each groove 114 may also be different due to manufacturing errors. Therefore, by placing graphite paper 115 between the seed crystal 130 and the bottom of the groove 114, the surfaces of multiple seed crystals 130 are made to be on the same plane. This ensures that the contact between the surface of the multiple seed crystals 130 used for crystal growth and the raw material solution is the same during the growth process, making the environment for crystal growth of each seed crystal 130 the same, improving the consistency of simultaneous crystal growth, and improving crystal quality.

[0071] Furthermore, since the graphite paper 115 is disposed in the groove 114, the sidewall of the groove 114 can provide protection for the edge area of ​​the graphite paper 115, preventing the raw material solution 140 from corroding the graphite paper 115.

[0072] Please see Figure 6 , Figure 6This is a schematic diagram of a seed crystal system 110 provided in an embodiment of this application. The seed crystal system 110 may include a support frame 116 and a plurality of connecting rods 117. The plurality of connecting rods 117 are respectively connected to a plurality of mounting portions 111. Exemplarily, one end of a connecting rod 117 is connected to a mounting portion 111, and the other end of the connecting rod 117 is connected to the support frame 116. Thus, the plurality of connecting rods 117 can be located between the plurality of mounting portions 111 and the support frame 116. Therefore, in the crystal growth apparatus 100, the plurality of mounting portions 111 can be closer to the crucible 120 than the support frame 116, so that during the crystal growth process, the seed crystal 130 mounted on the mounting portion 111 can come into contact with the raw material solution 140. In this way, the plurality of mounting portions 111 are connected to the same support frame 116 through the plurality of connecting rods 117, and the plurality of mounting portions 111 can be rotated by rotating the support frame 116.

[0073] For example, the support frame 116 includes a main rotation shaft and a support portion. A connecting rod 117 is connected to the support portion. The support portion can be multiple support rods or a disc structure, as long as it can extend radially along the main rotation shaft by a certain dimension. Therefore, after the connecting rod 117 is connected to the support portion, the connecting rod 117 can be offset from the rotation center of the support frame 116, which is the rotation center of the seed crystal system 110. Thus, the mounting portion 111 connected to the other end of the connecting rod 117 opposite to the support portion is also offset from the rotation center of the support frame 116, facilitating that the distances from the centers of the multiple mounting portions 111 to the rotation center O of the seed crystal system 110 are equal or approximately equal. Understandably, the connecting rod 117 and the support frame 116 can be made of stainless steel or other high-temperature resistant metals or alloys, or materials such as graphite that can withstand high temperatures.

[0074] Please see Figure 7 The seed crystal system 110 may further include multiple first drive mechanisms 118, which are connected to connecting rods 117. The first drive mechanisms 118 drive the mounting portion 111, which is connected to the connecting rods 117, to rotate. Exemplarily, the first drive mechanism 118 may be connected between the connecting rods 117 and the support frame 116, or between the connecting rods 117 and the mounting portion 111. Thus, when the seed crystal 130 is mounted on the mounting portion 111 to grow crystals, the position of the seed crystal 130 on the mounting portion 111 can be controlled. For example, during the growth process, by driving the mounting portion 111 to rotate through the first drive mechanisms 118, the relative relationship between the direction of the step flow of the seed crystal 130 and the direction of solution flow is adjusted, thereby improving the quality of the grown crystal.

[0075] Understandably, during crystal growth, the mounting section 111 can be continuously rotated by the first driving mechanism 118. This ensures the seed crystal 130 rotates continuously, maintaining a constant angle between the direction of the step flow of the seed crystal 130 and the solution flow direction, reducing the impact of differences in the angle between the step flow direction and the solution flow direction of multiple seed crystals 130 on the growth of individual seed crystals 130. The rotation speed of each mounting section 111 driven by the first driving mechanism 118 can be the same, thus ensuring a roughly consistent environment for the growth of each seed crystal 130. Alternatively, the rotation speed of each mounting section 111 driven by the first driving mechanism 118 can be different, allowing for adaptive control based on the growth conditions of each seed crystal 130, improving the consistency of the grown crystals from each seed crystal 130.

[0076] The first drive mechanism 118 may be a power transmission mechanism including gears, etc., to transmit power from outside the seed crystal system 110 to the mounting part 111 or other components fixedly connected to the mounting part 111 to drive the mounting part 111. The first drive mechanism 118 may be a power source disposed between the mounting part 111 and the support frame 116, for example, the power source is a high-temperature resistant motor.

[0077] For example, please continue to see Figure 7 The seed crystal system 110 may further include a second driving mechanism 119, which is connected to the support frame 116 of the seed crystal system 110. The second driving mechanism 119 is used to drive the support frame 116 to rotate around the rotation center of the seed crystal system 110. Thus, by driving the support frame 116 to rotate via the second driving mechanism 119, multiple seed crystals 130 can rotate around the rotation center of the seed crystal system 110. Furthermore, the second driving mechanism 119 can also drive the support frame 116 to move closer to or further away from the crucible 120, thereby facilitating contact between the seed crystals 130 and the raw material solution 140 during crystal growth.

[0078] Please see Figure 8 The crystal growth apparatus 100 may include a column 121. One end of the column 121 may be connected to the bottom of the crucible 120. The column 121 extends toward the seed crystal system 110 in the thickness direction of the bottom of the crucible 120. The projections of a plurality of mounting parts 111 on the bottom of the crucible 120 surround the column 121.

[0079] The pillar 121 can be integrally formed with the crucible 120, or it can be a separate component connected to the bottom of the crucible 120 through assembly. Understandably, by placing the pillar 121 in the crucible 120, the amount of raw material solution 140 contained in the crucible 120 can be reduced during crystal growth, thus reducing production costs. The material of the pillar 121 can be the same as or different from the material of the crucible 120. For example, if the material of the crucible 120 is graphite, the material of the pillar 121 can also be graphite. Therefore, the pillar 121 can provide a carbon source for crystal growth in the middle of the raw material solution 140, thereby making the carbon element distribution in the raw material solution 140 more uniform and contributing to improved crystal growth quality.

[0080] The cross-section of the pillar 121 at any position along the thickness direction at the bottom of the crucible 120 can be the same or different. For example, the pillar 121 can be cylindrical. The pillar 121 can also be other shapes to allow the raw material solution 140 to flow in the desired flow direction when the seed crystal system 110 rotates relative to the crucible 120. For example, the sidewall of the pillar 121 has a spirally rising groove, which can be an arc-shaped groove.

[0081] The column 121 can protrude beyond the surface of the raw material solution 140 in the thickness direction at the bottom of the crucible 120, and the column 121 can also be completely immersed in the raw material solution 140. Understandably, when using... Figure 6 or Figure 7 When the seed crystal system 110 is shown, the dimension of the column 121 extending in the thickness direction at the bottom of the crucible 120 can be increased to avoid interference between the column 121 and the seed crystal system 110.

[0082] Furthermore, the projections of the multiple mounting portions 111 on the bottom of the crucible 120 surround the pillar 121, ensuring that the seed crystals 130 mounted on the mounting portions 111 do not interfere with the pillar 121 when the seed crystal system 110 rotates relative to the crucible 120. In the thickness direction of the bottom of the crucible 120, the center of the pillar 121 can be aligned with the rotation center of the seed crystal system 110. Thus, the distances from the multiple seed crystals 130 mounted on the seed crystal system 110 to the pillar 121 can be equal, and the carbon source provided by the pillar 121 can be uniformly supplied to each seed crystal 130.

[0083] Furthermore, one end of the pillar 121 can also be connected to the seed crystal system 110. The pillar 121 extends toward the crucible 120 in the thickness direction of the bottom of the crucible 120, and multiple mounting portions 111 surround the pillar 121. In this way, the pillar 121 can also play the aforementioned role during crystal growth, which will not be described in detail here.

[0084] Understandably, the crucible 120 can be supported and rotated by the crucible shaft 122. The crucible shaft 122 can also move the crucible 120 in the thickness direction of the bottom of the crucible 120, so that the liquid level of the raw material solution 140 can be adjusted by moving the crucible 120, thereby making it easier for the seed crystal 130 to contact the raw material solution 140.

[0085] As previously described, the crystal growth apparatus 100 may include a heating device 150. See also... Figure 9 The heating device 150 may include a first heating device 150a and a second heating device 150b. The first heating device 150a may be disposed around and surrounding the crucible 120, and the second heating device 150b may be disposed on the bottom of the crucible 120 on the side opposite to the seed crystal system 110. In this way, the first heating device 150a can heat the circumference of the crucible 120, and the second heating device 150b can heat the bottom of the crucible 120, thereby improving the heating uniformity of the raw material solution 140 in the crucible 120.

[0086] The crystal growth apparatus 100 may also include an insulating felt 160. The insulating felt 160 can surround the crucible 120 circumferentially and from both the top and bottom sides, increasing the heat retention capacity of the crucible 120 and preventing heat loss. Depending on the type of heating device 150, the relative positions of the heating device 150 and the insulating felt 160 to the crucible 120 may differ. For example, when the heating device 150 uses induction heating, it can be positioned on the side of the insulating felt 160 furthest from the crucible 120. Alternatively, when the heating device 150 uses resistance heating, it can be positioned on the side of the insulating felt 160 closer to the crucible 120, meaning the insulating felt 160 simultaneously surrounds the heating device 150.

[0087] Please see Figure 10 and combined Figure 2 or Figure 8 This application also provides a method for growing a crystal, which is applied to the aforementioned crystal growth apparatus 100. The method includes the following steps:

[0088] S100, multiple mounting parts 111 of the seed crystal system 110 of the crystal growth equipment 100 are respectively installed to multiple seed crystals 130.

[0089] Since the multiple mounting parts 111 of the seed crystal system 110 are arranged around the rotation center O of the seed crystal system 110, and the distances from the centers of the multiple mounting parts 111 to the rotation center O of the seed crystal system are equal or approximately equal, after the multiple seed crystals 130 are respectively installed in the multiple mounting parts 111, the distances from the centers of the multiple seed crystals 130 to the rotation center O of the seed crystal system are equal or approximately equal, that is, the centers of each seed crystal 130 are distributed on a circumference at a certain distance from the rotation center.

[0090] Therefore, even if the flow direction of the raw material solution 140 includes inward or outward flow, the flow direction of the raw material solution 140 in various regions on the surface of a single seed crystal 130 can remain approximately consistent. Simultaneously, the relationship (such as relative flow velocity) between the surfaces of multiple seed crystals 130 and regions at the same distance from the rotation center O and the solution flow can also remain approximately the same. This helps to improve the consistency of the solution flow direction in various regions on the surface of a single seed crystal 130 and the uniformity of the relationship between multiple seed crystals 130 and the solution flow direction, thereby improving the quality of crystals grown simultaneously from multiple seed crystals 130 and increasing production efficiency.

[0091] Please see Figure 11 In some embodiments, the direction of the step flow of the multiple seed crystals 130 is equal to or approximately equal to the angle φ between the line connecting the center of the seed crystal 130 and the rotation center O of the seed crystal system 110. Understandably, the relationship between the direction of the step flow of the seed crystal 130 and the flow direction of the raw material solution 140 affects the growth of crystals on the surface of the seed crystal 130. When the direction of the step flow of the multiple seed crystals 130 is equal to or approximately equal to the angle φ between the line connecting the center of the seed crystal 130 and the rotation center O of the seed crystal system 110, even if the flow direction of the raw material solution 140 includes inward or outward flow, the relative flow relationship between the direction of the step flow of the multiple seed crystals 130 and the flow direction of the raw material solution 140 can remain substantially the same. This facilitates the unified control of the relationship between the step flow of the multiple seed crystals 130 and the flow of the raw material solution 140, improving the consistency of simultaneous crystal growth of the multiple seed crystals 130.

[0092] For example, the direction of the step flow of the seed crystal 130 can be perpendicular or parallel to the line connecting the center of the seed crystal 130 and the rotation center O. That is, the angle between the direction of the step flow of the seed crystal 130 and the line connecting the center of the seed crystal 130 and the rotation center O can be 90° or 0°.

[0093] Understandably, when the seed crystal 130 rotates relative to the raw material solution 140 under the drive of the seed crystal system 110, there is a relative flow between the seed crystal 130 and the raw material solution 140 in a direction perpendicular to the line connecting the center of the seed crystal 130 and the rotation center O, and this relative flow has a relatively large velocity. Since the angle between the direction of the step flow of the seed crystal 130 and the line connecting the center of the seed crystal 130 and the rotation center O is 90°, there is a large relative flow velocity between the seed crystal 130 and the raw material solution 140 in the direction opposite to the direction of the step flow of the seed crystal 130, which helps to improve the quality of the crystal grown by the seed crystal 130.

[0094] When the angle between the direction of the step flow of seed crystal 130 and the line connecting the center of seed crystal 130 and the rotation center O is 0°, the angle between the relative flow of seed crystal 130 and raw material solution 140 in the direction perpendicular to the line connecting the center of seed crystal 130 and the rotation center O and the direction of the step flow is also 0°. Since the solution flow direction opposite to the step flow direction of seed crystal 130 is the main factor affecting crystal growth on seed crystal 130, the relative flow of seed crystal 130 and raw material solution 140 in the direction perpendicular to the line connecting the center of seed crystal 130 and the rotation center O has almost no effect on crystal growth on seed crystal 130. The relative rotation of seed crystal system 110 and crucible 120 will cause the raw material solution 140 to generate inward or outward flow. Therefore, the inward or outward flow direction can be opposite to the step flow direction of seed crystal 130. That is, the main influencing factor for crystal growth on multiple seed crystals 130 is the inward or outward flow of raw material solution 140.

[0095] In some embodiments, at least two seed crystals 130 are mounted on corresponding mounting portions 111 via graphite paper 115. It is understood that during crystal growth on the seed crystals 130, to ensure a consistent environment for crystal growth on multiple seed crystals 130 and facilitate simultaneous control of crystal growth, the surfaces of the multiple seed crystals 130 can be aligned on the same plane, i.e., flush, thus ensuring consistent contact between the multiple seed crystals 130 and the raw material solution 140. However, due to manufacturing errors, the multiple mounting portions 111 may not be aligned on the same plane, or the thickness of the seed crystals 130 may be inconsistent. Therefore, after the multiple seed crystals 130 are mounted on the multiple mounting portions 111, graphite paper 115 can be placed between the seed crystals 130 and the mounting portions 111, i.e., the seed crystals 130 are mounted on the mounting portions 111 via graphite paper 115, thereby allowing adjustment of the surface height of the corresponding seed crystal 130 via the graphite paper 115.

[0096] For example, the thickness of the graphite paper 115 corresponding to at least two seed crystals 130 may be equal or unequal, so that the surfaces of at least two seed crystals can be made flush by adjusting the thickness or the amount of graphite paper 115 corresponding to the seed crystals 130.

[0097] S200, multiple seed crystals 130 are brought into contact with the raw material solution 140 in the crucible 120 of the crystal growth apparatus 100.

[0098] After the seed crystal 130 is installed on the mounting part 111 of the seed crystal system 110, the relative movement of the seed crystal system 110 and the crucible 120 in the thickness direction at the bottom of the crucible 120 can be controlled to make multiple seed crystals 130 contact the raw material solution 140 in the crucible 120 of the crystal growth equipment 100.

[0099] For example, please combine Figure 7The crystal growth apparatus 100 includes a second drive mechanism 119, which can drive the support frame 116 of the seed crystal system 110 to move in the thickness direction of the bottom of the crucible 120, thereby driving the seed crystal 130 on the mounting part 111 to move and make the seed crystal 130 contact the raw material solution 140.

[0100] For example, the crucible 120 is supported by a crucible shaft 122. By moving the crucible shaft 122 in the thickness direction of the bottom of the crucible 120, the crucible 120 can be moved in that direction, thereby changing the liquid level of the raw material solution 140 and bringing the seed crystal 130 into contact with the raw material solution 140.

[0101] S300, the seed crystal system 110 and the crucible 120 are rotated relative to each other to grow crystals on multiple seed crystals 130.

[0102] In some embodiments, by rotating the seed crystal system 110 and the crucible 120 relative to each other, a solution flow in the raw material solution 140 can be generated in the opposite direction to the step flow of the seed crystal 130, thereby growing a crystal on the seed crystal 130.

[0103] For example, when the direction of the step flow of the seed crystal 130 is perpendicular to the line connecting the center of the seed crystal 130 and the rotation center O, the seed crystal system 110 can rotate in the same direction. Since the angle between the direction of the step flow of the seed crystal 130 and the line connecting the center of the seed crystal 130 and the rotation center O is 90°, the raw material solution 140 can have a large relative flow velocity with the seed crystal 130 in the opposite direction to the step flow of the seed crystal 130. Therefore, when the seed crystal system 110 rotates in the same direction, the direction of the step flow of the seed crystal 130 and the flow direction of the raw material solution 140 can always maintain a large relative velocity in opposite directions, which is beneficial to improving the quality of the crystal grown by the seed crystal 130. Furthermore, controlling the seed crystal system 110 to always rotate in the same direction is also easy to implement, and the control logic is simple.

[0104] For example, when the direction of the step flow of the seed crystal 130 is parallel to the line connecting the center of the seed crystal 130 and the rotation center O, the seed crystal system 110 periodically repeats clockwise and counterclockwise rotation. Since the relative rotation of the seed crystal system 110 and the crucible 120 causes the raw material solution 140 to generate inward or outward flow, the inward or outward flow can be opposite to the direction of the step flow of the seed crystal 130. That is, the main influencing factor for crystal growth on multiple seed crystals 130 is the inward or outward flow of the raw material solution 140. Therefore, during crystal growth, the periodic clockwise and counterclockwise rotation of the seed crystal system 110 can cancel out the influence of the flow of the raw material solution 140 perpendicular to the step flow direction of the seed crystal 130 on crystal growth. That is, only the inward or outward flow of the raw material solution 140 affects crystal growth, which helps to control crystal growth by generating only inward or outward flow, thus improving the controllability of crystal growth.

[0105] In some embodiments, at least one mounting portion 111 may be driven to rotate about the center of the mounting portion 111 during the crystal growth process.

[0106] For example, the direction of the step flow of the seed crystal 130 mounted on the mounting part 111 can be changed by driving at least one mounting part 111 to rotate around the center of the mounting part 111, so that the direction of the step flow is always opposite to the flow direction of the raw material solution 140, thereby increasing the growth rate.

[0107] For example, the relative movement speed of the seed crystal 130 and the raw material solution 140, generated by the relative rotation of the seed crystal system 110 and the crucible 120, is much greater than the inward and outward flow speeds of the raw material solution 140. Therefore, if the mounting portion 111 rotates around its center, the relative movement speed of the seed crystal 130 and the raw material solution 140 can be further increased, reducing the influence of the inward or outward flow of the raw material solution 140 on the grown crystal, reducing the factors that need to be considered during crystal growth, and facilitating control. Simultaneously, by making the seed crystal 130 rotate on its own axis while the seed crystal system 110 and the crucible 120 rotate relative to each other, the elemental distribution in the raw material solution can be made more uniform, which helps to improve the uniformity of crystal growth.

[0108] It is easy to understand that the rotation speeds of the multiple mounting sections 111 may be the same or different, so as to keep the environment for the growth of the seed crystal 130 mounted on the mounting section 111 consistent under different conditions.

[0109] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A crystal growth apparatus, characterized in that, include: A crucible for containing a raw material solution used to grow crystals; A seed crystal system includes multiple mounting parts, each of which is used to mount multiple seed crystals. The seed crystal system is capable of rotating relative to the crucible, and the plurality of mounting parts are arranged around the rotation center of the seed crystal system. The distances from the centers of the plurality of mounting parts to the rotation center of the seed crystal system are equal or approximately equal.

2. The crystal growth apparatus as described in claim 1, characterized in that, The seed crystal system includes a tray with a groove on the surface of the tray facing the crucible, and one of the mounting portions includes one of the grooves; the groove is used to hold the seed crystal.

3. The crystal growth apparatus as described in claim 2, characterized in that, The seed crystal system also includes graphite paper, which is used to fix the seed crystal in the groove.

4. The crystal growth apparatus according to any one of claims 1 to 3, characterized in that, The seed crystal system also includes a support frame and multiple connecting rods, the multiple connecting rods being located between the multiple mounting portions and the support frame, and the multiple mounting portions being closer to the crucible than the support frame; One end of the connecting rod is connected to one of the mounting parts, and the other end of the connecting rod is connected to the support frame.

5. The crystal growth apparatus as described in claim 4, characterized in that, The seed crystal system also includes multiple first drive mechanisms; The first drive mechanism is connected to the connecting rod, and the first drive mechanism is used to drive the mounting part connected to the connecting rod to rotate.

6. The crystal growth apparatus as described in claim 5, characterized in that, The seed crystal system also includes a second driving mechanism; The second drive mechanism is connected to the support frame and is used to drive the support frame to rotate around the rotation center.

7. The crystal growth apparatus according to any one of claims 1 to 6, characterized in that, The crystal growth equipment also includes a column; One end of the pillar is connected to the bottom of the crucible, and the pillar extends toward the seed crystal system in the thickness direction of the bottom of the crucible, and the projections of the plurality of mounting parts on the bottom of the crucible surround the pillar. or, One end of the pillar is connected to the seed crystal system, the pillar extends toward the crucible in the thickness direction at the bottom of the crucible, and the plurality of mounting parts surround the pillar.

8. The crystal growth apparatus according to any one of claims 1 to 7, characterized in that, It also includes a first heating device and a second heating device, the first heating device being disposed around and surrounding the crucible, and the second heating device being disposed on the bottom of the crucible on the side opposite to the seed crystal system.

9. The crystal growth apparatus according to any one of claims 1 to 8, characterized in that, The mounting section includes a mounting mark, which indicates the mounting position of the seed crystal on the mounting section.

10. A method for growing a crystal, characterized in that, The crystal growth apparatus used in any one of claims 1 to 9 comprises: Multiple seed crystals are respectively installed into multiple mounting parts of the seed crystal system of the crystal growth equipment; The plurality of seed crystals are brought into contact with the raw material solution in the crucible of the crystal growth equipment; The seed crystal system and the crucible are rotated relative to each other to grow crystals on the plurality of seed crystals.

11. The crystal growth method according to claim 10, characterized in that, The angle between the direction of the step flow of the plurality of seed crystals and the line connecting the center of the seed crystal and the rotation center of the seed crystal system is equal or approximately equal.

12. The crystal growth method according to claim 10 or 11, characterized in that, The direction of the step flow of the seed crystal is perpendicular or parallel to the line connecting the center of the seed crystal and the center of rotation.

13. The method for growing a crystal according to any one of claims 10 to 12, characterized in that, When the direction of the step flow in the seed crystal is perpendicular to the line connecting the center of the seed crystal and the center of rotation, the seed crystal system rotates in the same direction, or... When the direction of the step flow of the seed crystal is parallel to the line connecting the center of the seed crystal and the center of rotation, the seed crystal system periodically repeats clockwise and counterclockwise rotation.

14. The crystal growth method as described in claim 10, characterized in that, Drive at least one of the mounting parts to rotate about the center of the mounting part.

15. The method for growing a crystal according to any one of claims 10 to 14, characterized in that, At least two of the seed crystals are mounted on the corresponding mounting portions using graphite paper; The graphite paper corresponding to at least two of the seed crystals has equal or unequal thickness, so that the surfaces of at least two of the seed crystals are flush.

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