Exhaust duct pair

Abstract

An exhaust duct pair is disclosed that includes a first exhaust duct and a second exhaust duct. The first exhaust duct includes a first end configured for coupling to a first exhaust line, a second, closed end opposite the first end, a first exhaust duct wall extending in a first direction between the first end and the second end and enclosing a first gas-conducting passage, and a first set of apertures in the first exhaust duct wall. The second exhaust duct includes a first end configured for coupling to a second exhaust line, a second, closed end opposite the first end, a second exhaust duct wall extending in the first direction between the first end and the second end and enclosing a second gas-conducting passage, and a second set of apertures in the second exhaust duct wall. The first set of apertures has a different arrangement than the second set of apertures.

Description

Technical Field

[0001] This disclosure generally relates to the field of semiconductor processing methods and related structures and apparatus, and to the field of device and integrated circuit manufacturing. More specifically, this disclosure generally relates to means for venting gases from the processing chamber of a batch semiconductor processing apparatus. Background Technology

[0002] In the field of semiconductor processing equipment, batch processing tools have advantages over single-wafer tools because they can process many wafers simultaneously, thereby increasing throughput. In processes involving wafers with high surface enhancement, a large amount of precursor gas is required to provide a uniform layer across the entire wafer surface. The precursor flow should be as uniform as possible to avoid variations in the amount of precursor deposited on different wafers within the same batch.

[0003] It is known to use a multi-hole injector to supply precursor gas to the processing chamber of a batch processing tool (such as a vertical furnace), and a more uniform gas distribution can be provided at the injection point along the height of the vertical furnace.

[0004] Any discussion set forth in this section (including discussions of problems and solutions) is included in this disclosure for the purpose of providing background information and should not be construed as an admission that any or all of the discussions were known at the time of making this invention or otherwise constitute prior art. Summary of the Invention

[0005] This invention provides a simplified overview of some concepts, which will be described in further detail below. This invention is not intended to require the identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0006] According to a first aspect of the invention, an exhaust pipe pair is provided, comprising a first exhaust pipe and a second exhaust pipe. The first exhaust pipe includes: a first end configured for connection to a first exhaust line; a second end opposite to the first end, the second end being closed; a first exhaust pipe wall extending in a first direction between the first and second ends and surrounding a first gas conduction channel; and a first set of holes in the first exhaust pipe wall. The second exhaust pipe includes: a first end configured for connection to a second exhaust line; a second end opposite to the first end, the second end being closed; a second exhaust pipe wall extending in a first direction between the first and second ends and surrounding a second gas conduction channel; and a second set of holes in the second exhaust pipe wall. The first set of holes has a different arrangement than the second set of holes.

[0007] By providing a pair of exhaust pipes, each with a different gas extraction profile due to the different arrangement of its orifices, the overall gas extraction profile of the pair of exhaust pipes can be adjusted by controlling the relative gas flow rate through one exhaust pipe relative to the other.

[0008] The first set of holes can have a first hole diameter, the second set of holes can have a second hole diameter, and the first hole diameter can be different from the second hole diameter.

[0009] The holes in the first group can each have the same first hole diameter.

[0010] The holes in the second group can each have the same second hole diameter.

[0011] The diameter of the first hole can be increased toward the first end of the first exhaust pipe, and the diameter of the second hole can be decreased toward the first end of the second exhaust pipe.

[0012] Adjacent holes in the first group can have different diameters.

[0013] The diameter of the first hole can be increased for every two holes in the first group of holes.

[0014] Adjacent holes in the second group can have different diameters.

[0015] The diameter of the second hole can be increased for every two holes in the second set of holes.

[0016] Each increase or decrease in the hole diameter can have the same magnitude.

[0017] The first group of holes may have a first hole spacing, and the second group of holes may have a second hole spacing, wherein the first hole spacing is different from the second hole spacing.

[0018] The spacing between the first holes can decrease toward the first end of the first exhaust pipe, and the spacing between the second holes can decrease toward the second end of the second exhaust pipe.

[0019] When measured in a plane perpendicular to the first direction, the first exhaust pipe and the second exhaust pipe may each have a length in a second direction perpendicular to the first direction and a width in a third direction perpendicular to both the first and second directions, with the length being greater than the width. The length may be at least 1.5 times the width, preferably at least 2 times the width.

[0020] Each gas conduction channel can have a rounded rectangular cross-section in a plane perpendicular to the first direction.

[0021] This elongated shape of the exhaust duct's cross-section allows for better fitting within the processing chamber of a vertical furnace, for example, by aligning the exhaust duct circumferentially with the processing chamber, while still providing a relatively large internal volume for the exhaust duct.

[0022] The first set of holes can be formed in a third-direction extension of the wall of the first exhaust duct, while the second set of holes can be formed in a third-direction extension of the wall of the second exhaust duct. By positioning the first and second sets of holes in this way, the first and second exhaust ducts can be positioned in the processing chamber of the vertical furnace, with the first set of holes facing the second set of holes circumferentially. This helps to provide a horizontally symmetrical airflow profile in the processing chamber and prevents local dead spots in the airflow.

[0023] Exhaust pipes can be made of silicon, quartz, or silicon carbide.

[0024] Each gas conduction channel can have a length of at least 1000 mm in a plane perpendicular to the first direction. 2 The cross-sectional area.

[0025] Each gas conduction channel can have a length of at least 2000 mm in a plane perpendicular to the first direction. 2 The cross-sectional area.

[0026] The first and second sets of holes can be distributed over at least 50% of the length of the corresponding pipe.

[0027] Each of the first group of holes and the second group of holes may include at least ten holes. That is, the first group of holes may include at least ten holes, and the second group of holes may include at least ten holes.

[0028] Each of the first group of holes and the second group of holes may include at least twenty holes. That is, the first group of holes may include at least twenty holes, and the second group of holes may include at least twenty holes.

[0029] Each of the first and second sets of holes may include at least 50 holes, at least 75 holes, at least 100 holes, at least 120 holes, or at least 150 holes. The first and second sets of holes may each include one hole for each wafer to be processed in a semiconductor processing apparatus including pairs of exhaust ducts. By providing one hole per wafer, the airflow through the processing chamber from the gas injector to the exhaust ducts can be made more uniform. The first and second sets of holes may together include one hole for each wafer to be processed in a semiconductor processing apparatus including pairs of exhaust ducts. For example, if 150 wafers are to be processed, the first set of holes may consist of 75 holes, and the second set of holes may also consist of 75 holes.

[0030] The smallest hole in the first group of holes and the second group of holes can have a diameter of at least 1 mm.

[0031] The largest hole in the first group and the second group can have a diameter of no more than 15 mm.

[0032] The average hole size of the first group of holes and the average hole size of the second group of holes can each be less than 7 mm.

[0033] The first gas discharge pipe may gradually taper along the first direction, such that the cross-sectional area of ​​the first gas discharge pipe at the second end is smaller than the cross-sectional area of ​​the first gas discharge pipe at the first end. The second exhaust pipe may also gradually taper along the first direction, such that the cross-sectional area of ​​the second exhaust pipe at the second end is smaller than the cross-sectional area of ​​the second exhaust pipe at the first end, wherein the cross-sectional area is taken in a plane perpendicular to the first direction.

[0034] The tapered shape increases the cross-sectional area of ​​the gas conduction channel from the top (second) end to the bottom (first) end. This helps reduce the pressure drop along the exhaust pipe because more flow enters the pipe from top to bottom. Therefore, this also means that larger orifices can be used in the exhaust pipe, which further allows for a reduction in the net pressure drop of the exhaust pipe.

[0035] The first exhaust duct can be configured to preferentially extract gas from the upper region of the processing chamber, while the second exhaust duct can be configured to preferentially extract gas from the lower region of the processing chamber.

[0036] According to a second aspect of the invention, a semiconductor processing apparatus is provided, comprising: a processing chamber configured to receive a plurality of substrates supported by a substrate boat; at least one gas injector for supplying gas to the processing chamber; at least two exhaust outlets for removing gas from the processing chamber; and an exhaust conduit pair according to the first aspect, each exhaust conduit in the exhaust conduit pair being connected to a corresponding exhaust outlet; wherein each of the exhaust conduits extends vertically inside the processing chamber on at least a portion of the substrate boat.

[0037] By providing at least two exhaust ducts, each connected to a corresponding exhaust outlet, individual control of the exhaust path is provided. By providing at least two exhaust ducts with different gas extraction profiles along the vertical direction, the overall gas extraction profile of the processing chamber can be controlled by controlling the amount of gas discharged through each exhaust duct. This allows the gas extraction profile to match the gas injection profile of the processing chamber, which allows for a more uniform airflow within the processing chamber. A more uniform airflow results in less variability in the amount of precursor deposited on multiple substrates.

[0038] Other technical features will be obvious to those skilled in the art based on the following figures, description and claims.

[0039] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be embodied or implemented in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0040] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0041] Some embodiments of the invention will now be described by way of example with reference to the accompanying drawings, wherein:

[0042] Figure 1 This is a schematic cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention;

[0043] Figure 2 This is a schematic perspective view of an exhaust pipe pair according to an embodiment of the present invention.

[0044] Figure 3 This is a schematic perspective view of an exhaust pipe pair according to another embodiment of the present invention.

[0045] Figure 4 This is a schematic perspective view of an exhaust pipe pair according to another embodiment of the present invention.

[0046] Figure 5 This is a schematic perspective view of an exhaust pipe pair according to another embodiment of the present invention.

[0047] Figure 6 It is a cross-sectional view of the exhaust pipe included in the exhaust pipe pair according to an embodiment of the present invention.

[0048] Figure 7 This is a schematic perspective view of an exhaust pipe pair according to another embodiment of the present invention.

[0049] Figure 8 This is a schematic perspective view of an exhaust pipe pair according to another embodiment of the present invention.

[0050] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0051] The following description of exemplary embodiments of the methods and compositions is merely illustrative and for purposes of explanation only. The following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having indicated features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments including different combinations of said features or steps.

[0052] In this disclosure, when two or more elements are referred to as being in "fluid communication," this means that a fluid, such as a gas or liquid, or a mixture thereof, can flow between the elements in one or both directions. Fluid communication can be achieved, for example, through gas lines, pipes, conduits, inlets, outlets, or any combination thereof. Fluid communication can be interruptible; for example, valves or other flow control elements may be present.

[0053] In this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any range indicated may include or exclude endpoints. Furthermore, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value and includes equivalents, and in some embodiments may refer to an average, median, representative value, multi-value, etc. Additionally, in this disclosure, the terms “comprising,” “consisting of,” and “having” may, in some embodiments, independently mean “generally or broadly comprising,” “including,” “substantially consisting of,” or “consisting of.” The meaning of any definition in this disclosure does not necessarily exclude the common and customary meaning in some embodiments. In some cases, percentages indicated herein may be relative or absolute percentages.

[0054] Numerous example materials are given throughout the embodiments of this disclosure. It should be noted that the chemical formulas given for each example material should not be interpreted as limiting, and the non-limiting example materials given should not be limited by the given example stoichiometry.

[0055] In this specification, it will be understood that the terms "on" or "above" may be used to describe relative positional relationships. Another element, film, or layer may be directly on the mentioned layer, or another layer (intermediate layer) or element may be inserted between them, or a layer may be disposed on the mentioned layer but not completely cover the surface of the mentioned layer. Therefore, unless the term "directly" is used alone, the terms "on" or "above" will be interpreted as relative concepts. Similarly, it will be understood that the terms "below," "under," or "beneath" will be interpreted as relative concepts.

[0056] refer to Figure 1A semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The semiconductor processing apparatus 101 includes a processing chamber 102, which is generally bell-shaped, having a closed top end 103, a sealable bottom end 104, and an internal space 105. The semiconductor processing apparatus 101 may be a vertical furnace, and the processing chamber 102 may extend accordingly along a first direction z between the top end 103 and the bottom end 104. The semiconductor processing apparatus 101 may include a flange assembly 106 for at least partially supporting the processing chamber 102 at the bottom end 104. When viewed along a vertical direction, the flange assembly 106 may be generally circular in shape. The flange assembly 106 may include a central opening 107 and various gas inlets 108 and gas outlets 109 for supplying gas to or removing gas from the internal space 105, respectively. The flange assembly 106 may be configured to partially close the bottom end 104 of the processing chamber 102.

[0057] Semiconductor processing apparatus 101 includes a door plate 110 configured to at least partially enclose the bottom end 104 of a processing chamber 102. A base 111 may be supported thereon on the door plate 110. The base 111 may be configured to support a substrate carrier 112 (also referred to as a boat). In some embodiments, the base may not be provided, and the substrate carrier 112 may be directly supported on the door plate 110. By moving the door plate 110 in a vertical direction, the base 111 (if included) and the boat can be inserted into and removed from the processing chamber 102 through the bottom end 104.

[0058] Substrate carrier 112 is configured to support a plurality of substrates 113 therein. The plurality of substrates 113 may be spaced apart in the vertical direction by a distance d. Substrate carrier 112 may include two end plates 114 spaced apart by a plurality of support rods 115. The plurality of support rods 115 may include multiple sets of grooves 116 or protrusions for supporting the plurality of substrates, each set of grooves 116 or protrusions being spaced apart from other sets of grooves 116 or protrusions in the vertical direction. Each set of grooves 116 or protrusions in the same vertical position forms a corresponding substrate receiving position.

[0059] The semiconductor processing apparatus 101 may include a heater for heating the processing chamber 102 and thereby heating the interior space, for example in the form of a heating coil 117 disposed around the outer surface 118 of the processing chamber 102.

[0060] Semiconductor processing apparatus 101 includes at least one gas inlet 108 in a flange assembly 106 for supplying one or more gases to the interior space 105 of a processing chamber 102. Each gas inlet 108 may be connected to one or more corresponding gas sources 119. Gas sources 119 may include process gas sources and purge gas sources. Gas inlets 108 can be categorized according to the type of gas to be supplied therethrough; for example, flange assembly 106 may include one or more process gas inlets and one or more purge gas inlets.

[0061] Semiconductor processing apparatus 101 includes at least one syringe 120, each in fluid communication with a corresponding gas inlet 108. Semiconductor processing apparatus 101 may include the same number of syringes 120 as the gas inlets 108, or may include fewer syringes 120 than the gas inlets 108, i.e., one or more gas inlets 108 may not be connected to the syringes 120. The syringes 120, or each syringe 120, extend vertically within a processing chamber 102. The syringes 120, or each syringe 120, may be supported at their bottom ends by syringe holders 121, which may be removably attached to flange assembly 106. In some embodiments, semiconductor processing apparatus 101 includes at least one multi-hole syringe and at least one pouring syringe.

[0062] Semiconductor processing apparatus 101 includes a plurality of gas outlets 109 in a flange assembly 106 for removing one or more gases from the interior space 105 of a processing chamber 102. The plurality of gas outlets 109 may each be in fluid communication with a vacuum pump 122 via a respective exhaust line 123. Semiconductor processing apparatus 101 includes at least two exhaust channels 124, for example, two exhaust channels forming an exhaust channel pair as described further in detail below, each exhaust channel 124 in fluid communication with a corresponding gas outlet 109. Each exhaust channel 124 may be supported at its bottom end by an exhaust channel holder 125, which may be removably attached to the flange assembly 106. Each exhaust channel 124 extends vertically within the processing chamber 102 and may include a plurality of holes spaced apart vertically. In some embodiments, each exhaust channel 124 may be oriented such that the plurality of holes face a substrate carrier 112. In some embodiments, each exhaust channel 124 may be oriented such that the plurality of holes face a circumferential direction. In some embodiments, each exhaust channel 124 may be oriented such that the plurality of holes in one exhaust channel face the plurality of holes in another exhaust channel. The semiconductor processing device 101 may include the same number of exhaust pipes 124 as the gas outlets 109, or may include fewer exhaust pipes 124 than the gas outlets 109, meaning that one or more gas outlets 109 may not be connected to exhaust pipes 124.

[0063] Semiconductor processing apparatus 101 may include a controller 126 configured to control various elements of the semiconductor processing apparatus 101. The controller 126 may include a memory for storing, for example, program instructions, setpoint values, characteristic data, and other data. The controller 126 may include a processor for executing program instructions that may be loaded from the memory. The controller 126 may be configured to receive data from sensors (e.g., pressure sensors, temperature sensors, and / or other types of sensors) in the semiconductor processing apparatus 101. The controller 126 may be configured to control elements of the semiconductor processing apparatus 101 by sending control signals to, for example, gas flow control valves, heating elements, and water cooling elements.

[0064] refer to Figure 2 The diagram illustrates an exhaust pipe pair 201 according to an embodiment of the present invention, which includes a first exhaust pipe 202 and a second exhaust pipe 203.

[0065] The first exhaust conduit 202 extends along the main axis F from the open bottom end 204, which is connectable to the gas outlet 109, to the closed top end 205. The first exhaust conduit 202 includes a first exhaust conduit wall 206, which defines an internal passage for gas conduction. Figure 6 ).

[0066] The first exhaust duct 202 includes a first set of holes 207 in the first exhaust duct wall 206, allowing gas to enter the internal passage of the first exhaust duct through the first set of holes 207. The first set of holes 207 may include at least ten, at least fifteen, or at least twenty holes. The holes in the first set of holes 207 are spaced apart in a direction parallel to the main axis F of the first exhaust duct 202. Each hole in the first set of holes 207 has the same hole diameter d1.

[0067] The second exhaust duct 203 extends along the main axis F from the open bottom end 208, which is connectable to the gas outlet 109, to the closed top end 209. The second exhaust duct 203 includes a second exhaust duct wall 210, which defines an internal passage for gas conduction. Figure 6 ).

[0068] The second exhaust duct 203 includes a second set of holes 211 in the second exhaust duct wall 210, allowing gas to enter the internal passage of the second exhaust duct through the second set of holes 211. The second set of holes 211 may include at least ten, at least fifteen, or at least twenty holes. The holes in the second set of holes 211 are spaced apart in a direction parallel to the main axis F of the second exhaust duct 203. Each hole in the second set of holes 211 has the same hole diameter d2.

[0069] The first set of holes 207 has a different arrangement or configuration than the second set of holes 211. The first exhaust pipe 202 is different from the second exhaust pipe 203.

[0070] Due to the different orifice arrangements, specifically different orifice diameters in this case, the first exhaust duct 202 has a different gas extraction profile than the second exhaust duct 203. This allows the overall gas extraction profile of the exhaust ducts 201 to be controlled by controlling the gas flow rate through the first exhaust duct 202 and the second exhaust duct 203. This can allow for a more uniform gas extraction profile from the processing chamber 102.

[0071] The orifice diameters of the first exhaust pipe 202 and the second exhaust pipe 203 can be selected to achieve a specific extraction ratio of one exhaust pipe relative to the other.

[0072] Reference Figure 3 This illustrates another embodiment of an exhaust pipe pair 301 according to an embodiment of the present invention, which includes a first exhaust pipe 302 and a second exhaust pipe 303.

[0073] The first exhaust conduit 302 extends along the main axis F from the open bottom end 304, which is connectable to the gas outlet 109, to the closed top end 305. The first exhaust conduit 302 includes a first exhaust conduit wall 306, which defines an internal passage for gas conduction. Figure 6 ).

[0074] The first exhaust conduit 302 includes a first set of holes 307 in the first exhaust conduit wall 306, allowing gas to enter the internal passage of the first exhaust conduit through the first set of holes 307. The first set of holes 307 may include at least ten, at least fifteen, or at least twenty holes. The holes in the first set of holes 307 are spaced apart in a direction parallel to the main axis F of the first exhaust conduit 302.

[0075] The first set of holes 307 has a hole diameter d1 that increases toward the top end 305 of the first exhaust duct 302. For each hole in the first set of holes 307, the hole diameter d1 can be different, i.e., the hole diameter d1 can increase by an increment from one hole to the next. This increment can be the same along the length of the first set of holes 307, or it can vary. The hole diameter d1 can increase every two holes, every three holes, or every four holes. The distance between the centers of two adjacent holes can be constant or it can vary along the axis of the first exhaust duct 302. By having a larger diameter hole toward the top end 305 of the first exhaust duct 302 and a smaller diameter hole toward the bottom end 304 of the first exhaust duct 302, relatively more gas is allowed to enter the first exhaust duct 302 in the region containing the larger hole, while relatively less gas is allowed to enter the first exhaust duct 302 in the region containing the smaller hole. The first exhaust duct 302 is configured to preferentially extract gas from the upper region of the processing chamber 102 compared to the lower region of the processing chamber 102.

[0076] The second exhaust conduit 303 extends along the main axis F from the open bottom end 308, which is connectable to the gas outlet 109, to the closed top end 309. The second exhaust conduit 303 includes a second exhaust conduit wall 310, which defines an internal passage for gas conduction. Figure 6 ).

[0077] The second exhaust conduit 303 includes a second set of holes 311 in the second exhaust conduit wall 310, allowing gas to enter the internal passage of the second exhaust conduit via the second set of holes 307. The second set of holes 311 may include at least ten, at least fifteen, or at least twenty holes. The holes in the second set of holes 311 are spaced apart in a direction parallel to the main axis F of the second exhaust conduit 303.

[0078] The second set of holes 311 has an increasing hole diameter d2 towards the top end 309 of the second exhaust duct 303. For each hole in the second set of holes 311, the hole diameter d2 can be different, i.e., the hole diameter d2 can increase by an increment from one hole to the next. The increment along the length of the second set of holes can be the same or can vary. The hole diameter d2 can increase every two holes, every three holes, or every four holes. The distance between the centers of two adjacent holes can be constant or can vary along the axis of the second exhaust duct 303. By having a smaller diameter hole towards the top end 309 of the second exhaust duct 303 and a larger diameter hole towards the bottom end 308 of the second exhaust duct 303, relatively more gas is allowed to enter the second exhaust duct 303 in the region containing the larger hole, while relatively less gas is allowed to enter the second exhaust duct 303 in the region containing the smaller hole. The second exhaust duct 303 is configured to preferentially extract gas from the lower region of the processing chamber 102 compared to the upper region of the processing chamber 102.

[0079] The first set of holes 307 has a different arrangement or configuration than the second set of holes 311. The first exhaust pipe 302 is different from the second exhaust pipe 303.

[0080] Due to the different orifice arrangements, and in this case, different orifice diameter profiles, the first exhaust duct 302 has a different gas extraction profile than the second exhaust duct 303. The first exhaust duct 302 can preferentially extract gas towards the top 103 of the processing chamber 102 compared to the bottom 104. The second exhaust duct 303 can preferentially extract gas towards the bottom 104 of the processing chamber 102 compared to the top 103. This allows the overall gas extraction profile of the exhaust ducts 301 to be controlled by controlling the gas flow rates through the first and second exhaust ducts 302 and 303. This can allow for a more uniform gas extraction profile from the processing chamber 102. For example, if the processed gas in the processing chamber 102 tends to flow towards the bottom of the processing chamber 102, the gas flow rate through the first exhaust duct 302 can be set to a higher value than the gas flow rate through the second exhaust duct 303 to extract more gas towards the top of the processing chamber 102 compared to the bottom.

[0081] The orifice diameters of the first exhaust pipe 302 and the second exhaust pipe 303 can be selected to achieve a specific extraction ratio of one exhaust pipe relative to the other.

[0082] refer to Figure 4 The diagram shows an exhaust pipe pair 401 according to an embodiment of the present invention, which includes a first exhaust pipe 402 and a second exhaust pipe 403.

[0083] The first exhaust conduit 402 extends along the main axis F from the open bottom end 404, which is connectable to the gas outlet 109, to the closed top end 405. The first exhaust conduit 402 includes a first exhaust conduit wall 406, which defines an internal passage for gas conduction. Figure 6 ).

[0084] The first exhaust conduit 402 includes a first set of holes 407 in the first exhaust conduit wall 406, allowing gas to enter the internal passage of the first exhaust conduit through the first set of holes 407. The first set of holes 407 may include at least ten, at least fifteen, or at least twenty holes. The holes in the first set of holes 407 are spaced apart in a direction parallel to the main axis F of the first exhaust conduit 402. Each hole in the first set of holes 407 has the same hole diameter. The holes in the first set of holes 407 have a constant hole spacing s1.

[0085] The second exhaust conduit 403 extends along the main axis F from the open bottom end 408, which is connectable to the gas outlet 109, to the closed top end 409. The second exhaust conduit 403 includes a second exhaust conduit wall 410, which defines an internal passage for gas conduction. Figure 6 ).

[0086] The second exhaust duct 403 includes a second set of holes 411 in the second exhaust duct wall 410, allowing gas to enter the internal passage of the second exhaust duct through the second set of holes 411. The second set of holes 411 may include at least ten, at least fifteen, or at least twenty holes. The holes in the second set of holes 411 are spaced apart in a direction parallel to the main axis F of the second exhaust duct 403. Each hole in the second set of holes 411 has the same hole diameter d2. The holes in the second set of holes 411 have a constant hole spacing s2, which is different from the hole spacing s1 of the first set of holes 407.

[0087] The first set of holes 407 has a different arrangement or configuration than the second set of holes 411. The first exhaust pipe 402 is different from the second exhaust pipe 403.

[0088] Due to the different orifice arrangements, specifically the different orifice spacing in this case, the first exhaust duct 402 has a different gas extraction profile than the second exhaust duct 403. This allows the overall gas extraction profile of the exhaust ducts 401 to be controlled by controlling the gas flow rate through the first exhaust duct 402 and the second exhaust duct 403. This can allow for a more uniform gas extraction profile from the processing chamber 102.

[0089] The hole spacing of the first exhaust pipe 402 and the second exhaust pipe 403 can be selected to achieve a specific extraction ratio of one exhaust pipe relative to the other exhaust pipe.

[0090] Reference Figure 5 Another embodiment of the exhaust pipe pair 501 according to an embodiment of the present invention is shown, which includes a first exhaust pipe 502 and a second exhaust pipe 503.

[0091] The first exhaust conduit 502 extends along the main axis F from the open bottom end 504, which is connectable to the gas outlet 109, to the closed top end 505. The first exhaust conduit 502 includes a first exhaust conduit wall 506, which defines an internal passage for gas conduction. Figure 6 ).

[0092] The first exhaust conduit 502 includes a first set of holes 507 in the first exhaust conduit wall 506, allowing gas to enter the internal passage of the first exhaust conduit through the first set of holes 507. The first set of holes 507 may include at least ten, at least fifteen, or at least twenty holes. The holes in the first set of holes 507 are spaced apart in a direction parallel to the main axis F of the first exhaust conduit 502.

[0093] The first set of holes 507 has a hole spacing s1, which is the distance between the centers of adjacent holes, decreasing towards the top 505 of the first exhaust pipe 502. The hole spacing s1 of each pair of adjacent holes in the first set of holes 507 can be different; that is, the hole spacing between the first hole and the second hole adjacent to the first hole can be increased by an increment compared to the hole spacing between the second hole and the third hole adjacent to the second hole and located on the opposite side of the first hole. This increment can be the same along the length of the first set of holes 507, or it can vary. The hole spacing s1 can increase every two pairs of adjacent holes, or every three or four pairs of adjacent holes. By having a larger pore density toward the top end 505 of the first exhaust duct 502 and a smaller pore density toward the bottom end 504 of the first exhaust duct 502, a relatively larger amount of gas is allowed to enter the first exhaust duct 502 in the region with a larger pore density, while a relatively smaller amount of gas is allowed to enter the first exhaust duct 502 in the region with a smaller pore density. The first exhaust duct 502 is configured to preferentially extract gas from the upper region of the processing chamber 102 compared to the lower region of the processing chamber 102.

[0094] The second exhaust conduit 503 extends along the main axis F from the open bottom end 508, which is connectable to the gas outlet 109, to the closed top end 509. The second exhaust conduit 503 includes a second exhaust conduit wall 510, which defines an internal passage for gas conduction. Figure 6 ).

[0095] The second exhaust conduit 503 includes a second set of holes 511 in the second exhaust conduit wall 510, allowing gas to enter the internal passage of the second exhaust conduit via the second set of holes 507. The second set of holes 511 may include at least ten, at least fifteen, or at least twenty holes. The holes in the second set of holes 511 are spaced apart in a direction parallel to the main axis F of the second exhaust conduit 503.

[0096] The second set of holes 511 has an increased hole spacing s2 towards the top end 509 of the second exhaust duct 503. The hole spacing s2 of each pair of adjacent holes in the second set of holes 511 can be different; that is, the hole spacing between the first hole and the second hole adjacent to the first hole can be increased by an increment compared to the hole spacing between the second hole and the third hole adjacent to the second hole and located on the opposite side of the first hole. The increment can be the same or can vary along the second set of holes 511. The hole spacing s2 can increase for every two pairs of adjacent holes or for every three or four pairs of adjacent holes. By having a smaller hole density towards the top end 509 of the second exhaust duct 503 and a larger hole density towards the bottom end 508 of the second exhaust duct 503, relatively more gas is allowed to enter the second exhaust duct 503 in the region with a larger hole density, and relatively less gas is allowed to enter the second exhaust duct 503 in the region with a smaller hole density. The second exhaust duct 503 is configured to preferentially extract gas from the lower region of the processing chamber 102 compared to the upper region of the processing chamber 102.

[0097] The first set of holes 507 has a different arrangement or configuration than the second set of holes 511. The first exhaust pipe 502 is different from the second exhaust pipe 503.

[0098] Due to the different orifice arrangements, specifically the different orifice diameter profiles in this case, the first exhaust duct 502 has a different gas extraction profile than the second exhaust duct 503. The first exhaust duct 502 can preferentially extract gas towards the top 103 of the processing chamber 102 compared to the bottom 104. The second exhaust duct 503 can preferentially extract gas towards the bottom 104 of the processing chamber 102 compared to the top 103. This allows the overall gas extraction profile of the exhaust ducts 501 to be controlled by controlling the gas flow rates through the first and second exhaust ducts 502 and 503. This can allow for a more uniform gas extraction profile from the processing chamber 102. For example, if the processed gas in the processing chamber 102 tends to flow towards the bottom of the processing chamber 102, the gas flow rate through the first exhaust duct 502 can be set to a higher value than the gas flow rate through the second exhaust duct 503 to extract more gas towards the top of the processing chamber 102 compared to the bottom.

[0099] The hole spacing of the first exhaust pipe 502 and the second exhaust pipe 503 can be varied to achieve a specific extraction ratio of one exhaust pipe relative to the other.

[0100] refer to Figure 6 The diagram shows a cross-section of the exhaust duct 601 in a plane perpendicular to the principal axis F. The exhaust duct 601 can be included in an exhaust duct pair according to an embodiment of the invention, and can be either, for example, the first exhaust duct and the second exhaust duct described herein. The exhaust duct 601 has an exhaust duct wall 602 that surrounds an internal conduction channel 603. The cross-sectional area of ​​the internal conduction channel 603 is at least 1000 mm². 2 Preferably at least 1500mm 2 More preferably at least 2000mm 2 By providing a large cross-sectional area, the volume of the internal conduction channel of the exhaust duct is increased, which allows for a high gas flow rate through the exhaust duct 601, even when the processing chamber 102 is under low pressure.

[0101] The first exhaust pipe and the second exhaust pipe may each have a length L1 in a second direction x perpendicular to the first direction. The first exhaust pipe and the second exhaust pipe may each have a width W1 in a third direction perpendicular to the first direction and the second direction. The length L1 may be greater than the width W1. For example, the length L1 may be at least 1.5 times, at least 2 times, or at least 2.5 times the width W1.

[0102] The internal conduction channel 603 of the exhaust duct may have a length L2 in a second direction x perpendicular to the first direction. The internal conduction channel 603 of the exhaust duct may have a width W2 in a third direction perpendicular to both the first and second directions. The length L2 may be greater than the width W2. For example, the length L2 may be at least 1.5 times, at least 2 times, or at least 2.5 times the width W2. By providing exhaust ducts with an elongated shape in cross-section, a better fit into the processing chamber 102 can be provided because the exhaust ducts can be aligned with their long sides (i.e., the sides extending in the second direction) and positioned along the circumferential direction inside the processing chamber 102.

[0103] The internal conduction channel 603 of the exhaust duct can have a rounded rectangular shape in a plane perpendicular to the main axis F. The exhaust duct 601 can have a rounded rectangular outer contour in the same plane. The wall thickness of the exhaust duct wall 602 can be substantially constant in a plane perpendicular to the main axis F.

[0104] Reference Figure 7 This illustrates another embodiment of an exhaust pipe pair 701 according to an embodiment of the present invention, which includes a first exhaust pipe 702 and a second exhaust pipe 703.

[0105] The first exhaust conduit 702 extends along the main axis F from the open bottom end 704, which is connectable to the gas outlet 109, to the closed top end 705. The first exhaust conduit 702 includes a first exhaust conduit wall 706, which defines an internal passage for gas conduction. Figure 6 ).

[0106] The first exhaust conduit 702 includes a first set of holes 707 in the first exhaust conduit wall 706, allowing gas to enter the internal passage of the first exhaust conduit through the first set of holes 707. The first set of holes 707 may include at least ten, at least fifteen, or at least twenty holes. The holes in the first set of holes 707 are spaced apart in a direction parallel to the main axis F of the first gas exhaust conduit 707.

[0107] The second exhaust conduit 703 extends along the main axis F from the open bottom end 708, which is connectable to the gas outlet 109, to the closed top end 709. The second exhaust conduit 703 includes a second exhaust conduit wall 710, which defines an internal passage for gas conduction. Figure 6 ).

[0108] The second exhaust conduit 703 includes a set of holes 711 in the second exhaust conduit wall 710, allowing gas to enter the internal passage of the second exhaust conduit through the second set of holes 711. The second set of holes 711 may include at least ten, at least fifteen, or at least twenty holes. The holes in the second set of holes 711 are spaced apart in a direction parallel to the main axis F of the second exhaust conduit 703.

[0109] The first set of holes 707 and the second set of holes 711 can have any of the configurations described herein, such that the first set of holes 707 has a different arrangement than the second set of holes 711.

[0110] A first set of holes 707 may be formed in a portion of the first exhaust pipe wall 706 extending upward in a third direction. A second set of holes 711 may be formed in a portion of the second exhaust pipe wall 710 extending upward in a third direction. The cross-section of the exhaust pipe may have... Figure 6 The form shown is such that the length is greater than the width. By positioning the first and second sets of holes in this way, the first and second exhaust ducts can be positioned in the processing chamber of the vertical furnace, with the first set of holes facing the second set of holes circumferentially. This helps to provide a horizontally symmetrical airflow profile in the processing chamber and prevents local dead spots in the airflow.

[0111] Reference Figure 8 The illustration shows another embodiment of an exhaust pipe pair 801 according to an embodiment of the present invention, the exhaust pipe pair 801 including a first exhaust pipe 802 and a second exhaust pipe 803.

[0112] The first exhaust conduit 802 extends along the main axis F from the open bottom end 804, which is connectable to the gas outlet 109, to the closed top end 805. The first exhaust conduit 802 includes a first exhaust conduit wall 806, which defines an internal passage for gas conduction. Figure 6 ).

[0113] The first exhaust conduit 802 includes a first set of holes 807 in the first exhaust conduit wall 806, allowing gas to enter the internal passage of the first exhaust conduit through the first set of holes 807. The first set of holes 807 may include at least ten, at least fifteen, or at least twenty holes. The holes in the first set of holes 807 are spaced apart in a direction parallel to the main axis F of the first exhaust conduit 807.

[0114] The second exhaust conduit 803 extends along the main axis F from the open bottom end 808, which is connectable to the gas outlet 109, to the closed top end 809. The second exhaust conduit 803 includes a second exhaust conduit wall 810, which defines an internal passage for gas conduction. Figure 6 ).

[0115] The second exhaust conduit 803 includes a set of holes 811 in the second exhaust conduit wall 810, allowing gas to enter the internal passage of the second exhaust conduit through the second set of holes 811. The second set of holes 811 may include at least ten, at least fifteen, or at least twenty holes. The holes in the second set of holes 811 are spaced apart in a direction parallel to the main axis F of the second exhaust conduit 803.

[0116] The first set of holes 807 and the second set of holes 811 can have any of the configurations described herein, such that the first set of holes 807 has a different arrangement than the second set of holes 811.

[0117] The first gas discharge pipe 802 gradually tapers along the first direction z (main axis F), such that the cross-sectional area of ​​the first gas discharge pipe 802 at the second end 805 is smaller than the cross-sectional area of ​​the first gas discharge pipe 804 at the first end. The second exhaust pipe 803 gradually tapers along the first direction z (main axis F), such that the cross-sectional area of ​​the second exhaust pipe 803 at the second end 809 is smaller than the cross-sectional area of ​​the second exhaust pipe 803 at the first end 808. These cross-sectional areas are taken in a plane perpendicular to the first direction x (main axis F). The internal channels of the first and second exhaust pipes taper in the same manner.

[0118] The exhaust pipe according to an embodiment of the invention may be made of, for example, silicon, quartz or silicon carbide.

[0119] In some embodiments, the first group of holes 207, 307, 407, 507, 707, 807 includes a top hole and a bottom hole. The top hole is the hole closest to the top end 205, 305, 405, 505, 705, 805 of the first exhaust pipe 202, 302, 402, 502, 702, 802 in the first group of holes, and the bottom hole is the hole closest to the bottom end 206, 306, 406, 506, 706, 806 of the first exhaust pipe 202, 302, 402, 502, 702, 802 in the first group of holes. The distance between the top hole and the bottom hole can be at least 50% of the distance between the top ends 205, 305, 405, 505, 705, 805 and the bottom ends 206, 306, 406, 506, 706, 806 of the first exhaust pipes 202, 302, 402, 502, 702, 802. That is, the first set of holes can be distributed along at least 50% of the length of the first exhaust pipes 202, 302, 402, 502, 702, 802. Alternatively, the first set of holes can be distributed along at least 60%, at least 70%, or at least 80% of the length of the first exhaust pipes 202, 302, 402, 502, 702, 802. The distance between the bottom hole and the bottom end 206, 306, 406, 506 of the first exhaust pipe 202, 302, 402, 502, 702, 802 can be less than 50%, less than 40%, less than 30%, less than 20%, or less than 10% of the length of the first exhaust pipe 202, 302, 402, 502, 702, 802.

[0120] In some embodiments, the second group of holes 211, 311, 411, 511, 711, 811 includes a top hole and a bottom hole. The top hole is the hole in the first group of holes that is closest to the top end 209, 309, 409, 509, 709, 809 of the second exhaust pipe 203, 303, 403, 503, 703, 803, while the bottom hole is the hole in the second group of holes that is closest to the bottom end 208, 308, 408, 508, 708, 808 of the second exhaust pipe 203, 303, 403, 503, 703, 803. The distance between the top hole and the bottom hole can be at least 50% of the distance between the top ends 209, 309, 409, 509, 709, 809 and the bottom ends 208, 308, 408, 508, 708, 808 of the second exhaust pipes 203, 303, 403, 503, 703, 803. That is, the second set of holes can be distributed along at least 50% of the length of the second exhaust pipes 203, 303, 403, 503, 703, 803. Alternatively, the second set of holes can be distributed along at least 60%, at least 70%, or at least 80% of the length of the second exhaust pipes 203, 303, 403, 503, 703, 803. The distance between the bottom hole and the bottom ends 208, 308, 408, 508, 708, and 808 of the second exhaust pipes 203, 303, 403, 503, 703, and 803 can be less than 50%, less than 40%, less than 30%, less than 20%, or less than 10% of the length of the second exhaust pipes 203, 303, 403, 503, 703, and 803.

[0121] The smallest hole in the first group and the second group of holes 211, 311, 411, 511, 711, 811 may have a diameter of at least 1 mm, at least 2 mm, at least 3 mm, at least 4 mm, or at least 5 mm. The largest hole in the first group and the second group of holes 211, 311, 411, 511, 711, 811 may have a diameter of less than 15 mm, less than 14 mm, less than 13 mm, less than 12 mm, less than 11 mm, less than 10 mm, less than 9 mm, or less than 8 mm. The average hole size of the first group of holes may be less than 7 mm, and the average hole size of the second group of holes 211, 311, 411, 511, 711, 811 may be less than 7 mm.

[0122] In some embodiments, each of the first and second exhaust channels includes a hole for each wafer to be processed in the semiconductor processing apparatus 101. For example, the first set of holes may include at least 100, at least 120, or at least 150 holes. The second set of holes may include at least 100, at least 120, or at least 150 holes.

[0123] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be embodied or implemented in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0124] All of these embodiments are within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed.

Claims

1. A pair of exhaust pipes, comprising: The first exhaust pipe includes: The first end is configured to be connected to the first exhaust line; The second end, opposite to the first end, is closed. The first exhaust pipe wall extends along a first direction between the first end and the second end and surrounds the first gas conduction channel; The first set of holes in the wall of the first exhaust pipe; The second exhaust pipe includes: The first end is configured to connect to the second exhaust line; The second end, opposite to the first end, is closed. The second exhaust pipe wall extends along a first direction between the first end and the second end and surrounds the second gas conduction channel; The second set of holes in the wall of the second exhaust pipe, The first group of holes has a different arrangement than the second group of holes.

2. The exhaust pipe pair according to claim 1, wherein, The first set of holes has a first hole diameter, and the second set of holes has a second hole diameter, wherein the first hole diameter is different from the second hole diameter.

3. The exhaust pipe pair according to claim 1 or 2, wherein, Each hole in the first group of holes has the same first hole diameter.

4. The exhaust pipe pair according to any one of claims 1 to 3, wherein, The holes in the second group each have the same second hole diameter.

5. The exhaust pipe pair according to claim 2, wherein, The diameter of the first hole increases toward the first end of the first exhaust pipe, and the diameter of the second hole decreases toward the first end of the second exhaust pipe.

6. The exhaust pipe pair according to any one of claims 1 to 5, wherein, The first group of holes has a first hole spacing, and the second group of holes has a second hole spacing, wherein the first hole spacing is different from the second hole spacing.

7. The exhaust pipe pair according to claim 6, wherein, The first hole spacing decreases toward the first end of the first exhaust pipe, and the second hole spacing decreases toward the second end of the second exhaust pipe.

8. The exhaust pipe pair according to any one of claims 1 to 7, wherein, In a plane perpendicular to the first direction, the first exhaust pipe and the second exhaust pipe each have a length in a second direction perpendicular to the first direction and a width in a third direction perpendicular to the first and second directions, wherein the length is greater than the width.

9. The exhaust pipe pair according to claim 8, wherein, The length is at least 1.5 times the width.

10. The exhaust pipe pair according to claim 8 or 9, wherein, The first set of holes is formed in the portion of the first exhaust pipe wall that extends upward in the third party, and the second set of holes is formed in the portion of the second exhaust pipe wall that extends upward in the third party.

11. The exhaust pipe pair according to any one of claims 1 to 10, wherein, The first gas conduction channel and the second gas conduction channel each have a length of at least 2000 mm in a plane perpendicular to the first direction. 2 The cross-sectional area.

12. The exhaust pipe pair according to any one of claims 1 to 11, wherein, The first set of holes and the second set of holes are distributed over at least 50% of the length of the corresponding pipe.

13. The exhaust pipe pair according to any one of claims 1 to 12, wherein, The first exhaust pipe gradually tapers along the first direction, such that the cross-sectional area of ​​the first exhaust pipe at the second end is smaller than the cross-sectional area of ​​the first exhaust pipe at the first end; and wherein the second exhaust pipe gradually tapers along the first direction, such that the cross-sectional area of ​​the second exhaust pipe at the second end is smaller than the cross-sectional area of ​​the second exhaust pipe at the first end, the cross-sectional area being a section taken in a plane perpendicular to the first direction.

14. The exhaust pipe pair according to any one of claims 1 to 13, wherein, Each of the first group of holes and the second group of holes includes at least ten holes.

15. The exhaust pipe pair according to any one of claims 1 to 14, wherein, Each of the first group of holes and the second group of holes comprises at least fifty holes.

16. The exhaust pipe pair according to any one of claims 1 to 15, wherein, The smallest hole in the first group of holes and the second group of holes has a diameter of at least 1 mm.

17. The exhaust pipe pair according to any one of claims 1 to 16, wherein, The largest hole in the first group of holes and the second group of holes has a diameter of no more than 15 mm.

18. The exhaust pipe pair according to any one of claims 1 to 17, wherein, The average hole size of the first group of holes and the average hole size of the second group of holes are both less than 7 mm.

19. The exhaust pipe pair according to any one of claims 1 to 18, wherein, The first exhaust duct is configured to preferentially extract gas from the upper region of the processing chamber, and the second exhaust duct is configured to preferentially extract gas from the lower region of the processing chamber.

20. A semiconductor processing apparatus, comprising: The processing chamber is configured to receive multiple substrates supported by a substrate boat; At least one gas injector for supplying gas to the processing chamber; At least two exhaust outlets are provided for removing gases from the processing chamber; According to any one of claims 1 to 19, each exhaust pipe in the exhaust pipe pair is connected to a corresponding exhaust outlet; in, Each of the exhaust ducts extends vertically inside the processing chamber on at least a portion of the substrate boat.

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