Method of forming a pattern

By using a semiconductor photoresist composition containing organometallic compounds and solvents, combined with a dry development process, the problems of insufficient resolution and high line edge roughness in extreme ultraviolet lithography are solved, achieving efficient fine pattern formation and stable photoresist performance.

CN122151441APending Publication Date: 2026-06-05SAMSUNG SDI CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SAMSUNG SDI CO LTD
Filing Date
2025-12-02
Publication Date
2026-06-05

AI Technical Summary

Technical Problem

Existing chemically amplified photoresists suffer from insufficient resolution, low photosensitivity, and high line edge roughness in extreme ultraviolet lithography, while inorganic photoresists present challenges in storage stability and development.

Method used

A semiconductor photoresist composition containing organometallic compounds and solvents is used to form photoresist patterns through a dry development process. Gas is used instead of wet processes to reduce pattern collapse and wobble, improve resolution, and reduce bridging defects.

Benefits of technology

It achieves fine pattern formation with excellent resolution and reduced bridging defects in extreme ultraviolet lithography, improves the exposure characteristics and surface roughness of photoresist, and avoids collapse and wobble problems caused by pattern miniaturization.

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Abstract

A method of forming a pattern is disclosed. The method of forming a pattern can include forming or providing an etching target film on a substrate; coating a semiconductor photoresist composition including an organometallic compound and a solvent on the etching target film to form or provide a photoresist film; exposing the photoresist film with a patterned mask; dry developing the photoresist film with a gas to form a photoresist pattern; and etching the etching target film with the photoresist pattern as an etching mask. The present application can achieve excellent coating properties and line edge roughness.
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