Photoetching process and semiconductor structure

By increasing the soft baking temperature and optimizing the exposure and rinsing processes in the photolithography process, the problems of photoresist expansion and bubble defects in immersion lithography were solved, improving the lithography effect and product yield, and reducing downtime risks.

CN122172509APending Publication Date: 2026-06-09SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
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Patent Information

Application Number
CN202411805356.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-09
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

In immersion lithography, defects such as photoresist top expansion and wafer edge bubbles lead to poor lithography results. Existing detection methods cannot optimize these defects in a timely and effective manner, affecting product yield and production efficiency.

Method used

By increasing the soft baking temperature of the photoresist layer to form a liquid barrier, the exposure speed of defect-risk areas is reduced, the rinsing time of the central area after development is extended, and the scanning speed is slowed down, thus optimizing the exposure formula and rinsing process.

Benefits of technology

It effectively reduced the formation rate of lithography defects, decreased the probability of downtime, improved lithography quality and product yield, and increased production efficiency.

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Abstract

The invention provides a photoetching process and a semiconductor structure. According to the photoetching process, when the photoresist layer is subjected to soft baking, the soft baking temperature is increased, so that the performance of the liquid isolation layer is enhanced, and the defect formation rate is reduced. And in the exposure process, the exposure speed of the exposure defect risk area is reduced, the defect formation rate is also reduced, and the exposure quality is improved. Furthermore, in the washing process after development, the defect removal effect is enhanced by prolonging the washing time of the central area and reducing the washing scanning speed of the central area towards the edge area. On the basis, the photolithographic process provided by the invention relieves the defect problem from the root of defect formation, not only reduces the shutdown probability caused by defects, shortens the defect verification time and improves the process efficiency, but also avoids the expansion of the influence interval caused by the detection rate, and also obviously improves the product yield.
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