A dual-frequency millimeter wave high-gain low-profile transmissive and reflective integrated antenna

Abstract

The application discloses a dual-frequency millimeter wave high-gain low-profile transmission-reflection integrated antenna, and relates to the technical field of wireless communication. The application realizes the functions of selective electromagnetic wave high-gain transmission and reflection of two frequencies by using one feed source structure, and reduces the profile height of the antenna to one half of the profile height of a conventional design only by using one metal layer and two dielectric layers, so that the overall size of the antenna is greatly reduced. In addition, the application can realize the functions realized by other prior arts only by using two dielectric layers, so that the overall processing complexity and manufacturing cost of the antenna are greatly reduced, and the application has high cost and processing advantages.

Description

Technical Field

[0001] This application relates to the field of wireless communication technology, and in particular to a dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna. Background Technology

[0002] In recent years, millimeter-wave transmissive-reflective integrated antennas have been extensively studied. However, existing technologies for realizing high-gain transmissive-reflective integrated antennas generally suffer from the following problems: First, many existing solutions are structurally complex and costly, typically using one or two horns as feed sources. This design not only increases system complexity but also enlarges the antenna size and causes the horn to block the radiated beam, affecting performance. Second, to achieve transmission and reflection at different frequencies, existing technologies often introduce additional selective surfaces to achieve frequency-selective transmission or reflection. This necessitates the use of five to six layers of dielectric substrates, further increasing the overall system design complexity and cost. Simultaneously, many existing solutions exhibit significant differences in their frequency operating ranges, particularly the large span between high and low frequency bands. This greatly limits the application of these solutions in the millimeter-wave band, especially in 5G communications. Summary of the Invention

[0003] This application aims to solve one of the aforementioned technical problems in the prior art. To this end, embodiments of this application provide a dual-band millimeter-wave high-gain, low-profile transmission / reflection integrated antenna.

[0004] According to an embodiment of this application, a dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna is provided, including a feed structure and a metal layer, a first dielectric layer and a second dielectric layer arranged sequentially. The feed structure is disposed on the second dielectric layer and is used to emit polarized electromagnetic waves. The metal layer is used to reflect y-polarized electromagnetic waves and x-polarized electromagnetic waves. A first metal structure layer and a second metal structure layer are respectively disposed on both sides of the first dielectric layer. The first metal structure layer faces the metal layer. The first metal structure layer includes a high-frequency reflection phase modulation unit. The second metal structure layer is used for the transmission of high-frequency polarized electromagnetic waves and the reflection of low-frequency polarized electromagnetic waves, so that the reflection module formed by the first metal structure layer and the second metal structure layer can be used for continuous phase modulation of high-frequency polarized electromagnetic waves. A third metal structure layer and a fourth metal structure layer are respectively disposed on both sides of the second dielectric layer. The third metal structure layer faces the first dielectric layer. The third metal structure layer includes a low-frequency continuous phase modulation unit. The fourth metal structure layer is used to transmit x-polarized electromagnetic waves and reflect y-polarized electromagnetic waves. The transmission module composed of the second metal structure layer, the third metal structure layer and the fourth metal structure layer can be used for continuous phase modulation of low-frequency polarized electromagnetic waves.

[0005] The aforementioned dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna has at least the following advantages: This application achieves the function of selective electromagnetic wave high-gain transmission and reflection at two frequencies by using a single feed structure, and the antenna profile height can be reduced to half that of traditional designs using only one metal layer and two dielectric layers, greatly reducing the overall size of the antenna; in addition, this application can achieve the functions of other existing technologies using only two dielectric layers, which can greatly reduce the overall processing complexity and manufacturing cost of the antenna, and has extremely high cost and processing advantages.

[0006] According to the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna of the present application embodiment, the first metal structure layer includes a plurality of arrayed high-frequency reflection phase modulation units. The high-frequency reflection phase modulation unit includes a first dipole and a second dipole arranged in a cross configuration. The first dipole includes two first dipole portions, and a first arc-shaped structure is provided at one end of the two first dipole portions facing each other. The second dipole includes two second dipole portions, and a second arc-shaped structure is provided at one end of the two second dipole portions facing each other.

[0007] According to the embodiments of this application, the dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna has four high-frequency reflection phase modulation units whose ends are connected at the same position. The first dipole portion or the second dipole portion of these units forms a high-frequency 360° continuous phase modulation unit.

[0008] According to the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna of the present application embodiment, the second metal structure layer includes a plurality of arrayed polarization-sensitive frequency selection surfaces with a hollow structure in the middle, and the hollow structure is offset from the high-frequency 360° continuous phase modulation unit.

[0009] According to the dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna described in the embodiments of this application, the hollow structure includes two first channels with overlapping ends, the included angle between the two first channels is 90°, and a second channel is provided on each side of the two first channels facing each other.

[0010] According to the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna described in the embodiments of this application, the third metal structure layer includes a plurality of arrayed low-frequency continuous phase modulation units. Each low-frequency continuous phase modulation unit includes a first notched ring and a second notched ring arranged concentrically. The opening orientation of the first notched ring is opposite to that of the second notched ring, and the second notched ring is located within the first notched ring.

[0011] According to the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna described in the embodiments of this application, the notch opening angle of the first notch ring is equal to the notch opening angle of the second notch ring.

[0012] According to the dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna described in the embodiments of this application, the first notched ring or the second notched ring is misaligned with the high-frequency 360° continuous phase modulation unit.

[0013] According to the embodiments of this application, the focal length of the dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna is defined as F, and the profile height of the dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna is defined as H, where F is equal to twice H.

[0014] According to the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna described in the embodiments of this application, the feed structure includes a feed transmitter and a feed power supply. The feed transmitter is located at the center of the second dielectric layer, the first dielectric layer is hollowed out at the position opposite to the feed transmitter, and the feed power supply is located at the edge of the second dielectric layer.

[0015] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0016] The present application will be further described below with reference to the accompanying drawings and embodiments; Figure 1 This is a schematic diagram of the structure of a dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna according to an embodiment of this application; Figure 2 This is a low-profile schematic diagram of the dual-band millimeter-wave high-gain low-profile transmission and reflection integrated antenna in the embodiments of this application. Figure 3 This is a schematic diagram of the polarized grid structure of the metal layer in an embodiment of this application; Figure 4 This is a schematic diagram of the metal structure of the first dielectric layer and the second dielectric layer in the embodiments of this application; Figure 5 This is a schematic diagram of the structure of the high-frequency 360° continuous phase modulation unit in the embodiments of this application. Figure 6 This is a schematic diagram of the structure of the polarization-sensitive frequency selection surface with a hollow structure in the middle, as described in the embodiments of this application. Figure 7 This is a schematic diagram of the structure of the low-frequency continuous phase modulation unit in the embodiments of this application; Figure 8 This is a partial structural schematic diagram of the fourth metal structure layer in an embodiment of this application; Figure 9 This is a schematic diagram of the metal layer structure in an embodiment of this application; Figure 10 This is a schematic diagram of the structure of the first dielectric layer in an embodiment of this application; Figure 11 yes Figure 10 Enlarged view of point A in the middle; Figure 12 This is a schematic diagram of the structure of the second dielectric layer in an embodiment of this application; Figure 13 yes Figure 12 Enlarged view of point B in the middle; Figure 14 This is a gain diagram of the far-field radiation E-plane at 28 GHz in an embodiment of this application; Figure 15 This is a gain diagram of the far-field radiation H-plane at 28 GHz in an embodiment of this application; Figure 16 This is a gain diagram of the far-field radiation E-plane at 38 GHz in an embodiment of this application; Figure 17 This is a gain diagram of the far-field radiation H-plane at 38 GHz in an embodiment of this application.

[0017] Reference numerals: Second dielectric layer 100, feed structure 200, feed transmitter 210, feed power supply 220, first dielectric layer 300, first dipole portion 311, second dipole portion 312, second arc-shaped structure 313, first arc-shaped structure 314, second metal structure layer 320, hollow structure 321, first channel 3211, second channel 3212, low-frequency continuous phase modulation unit 110, first notch ring 111, second notch ring 112, fourth metal structure layer 120, second metal grid strip 121, connecting column 400, metal layer 500, first metal grid strip 510. Detailed Implementation

[0018] This section will describe in detail the specific embodiments of this application. Preferred embodiments of this application are shown in the accompanying drawings. The purpose of the drawings is to supplement the textual description with graphics, so that people can intuitively and vividly understand each technical feature and the overall technical solution of this application, but they should not be construed as limiting the scope of protection of this application.

[0019] In the description of this application, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0020] In the description of this application, "several" means one or more, "more than" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0021] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0022] Reference Figure 1 and Figure 2 The dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna of this application includes a feed structure 200 and a metal layer 500, a first dielectric layer 300 and a second dielectric layer 100 arranged sequentially. The feed structure 200 is disposed on the second dielectric layer 100 and is used to emit polarized electromagnetic waves.

[0023] The metal layer 500 is used to reflect y-polarized electromagnetic waves and x-polarized electromagnetic waves.

[0024] A first metal structure layer and a second metal structure layer 320 are respectively disposed on both sides of the first dielectric layer 300. The first metal structure layer faces the metal layer 500. The first metal structure layer includes a high-frequency reflection phase modulation unit. The second metal structure layer 320 is used for the transmission of high-frequency polarized electromagnetic waves and the reflection of low-frequency polarized electromagnetic waves, so that the reflection module formed by the first metal structure layer and the second metal structure layer 320 can be used for continuous phase modulation of high-frequency polarized electromagnetic waves.

[0025] A third metal structure layer and a fourth metal structure layer 120 are respectively disposed on both sides of the second dielectric layer 100. The third metal structure layer faces the first dielectric layer 300 and includes a continuous phase modulation unit. The fourth metal structure layer 120 is used to transmit x-polarized electromagnetic waves and reflect y-polarized electromagnetic waves. The transmission module composed of the second metal structure layer 320, the third metal structure layer and the fourth metal structure layer 120 can be used for continuous phase modulation of low-frequency polarized electromagnetic waves.

[0026] The metal layer 500 is connected to the first dielectric layer 300 via a connecting post 400.

[0027] The focal length of the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna is defined as F, and the profile height of the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna is defined as H, where F is equal to twice H.

[0028] Compared to existing technologies, the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna of this application achieves the function of selective electromagnetic wave high-gain transmission and reflection at two frequencies by using a single feed structure 200. Moreover, the antenna profile height can be reduced to half that of traditional designs by using only one metal layer 500 and two dielectric layers, greatly reducing the overall size of the antenna. In addition, this application can achieve the functions of other existing technologies using only two dielectric layers, which can greatly reduce the overall processing complexity and manufacturing cost of the antenna, and has extremely high cost and processing advantages.

[0029] It is understood that the dual-band millimeter-wave high-gain low-profile transmission-reflection integrated antenna of this application consists of only two dielectric layers. These two dielectric layers can respectively achieve transmission of 28 GHz electromagnetic waves and reflection of 38 GHz electromagnetic waves, and support 360° continuous phase compensation for both frequencies. Figure 2 As shown, both the first dielectric layer 300 and the second dielectric layer 100 use Rogers 5880 as the dielectric. An air layer is placed between the first dielectric layer 300 and the second dielectric layer 100. A metal structural layer is printed above and below each of the first dielectric layer 300 and the second dielectric layer 100, for a total of four metal structural layers. The specific structure is as follows: Figure 4 As shown.

[0030] The thickness of the first dielectric layer 300 The thickness of the second dielectric layer 100 is set to 0.787 mm. The air layer thickness is set to 1.575mm. Set to 0.7mm, specifically, as follows: Figure 2 As shown, at a low frequency of 28 GHz, x-polarized electromagnetic waves are incident from the feed structure 200, undergo total reflection upon passing the lower surface of the metal layer 500, and then reach the upper surface of the first dielectric layer 300. The second dielectric layer 100 performs polarization conversion and phase compensation on the incident wave, causing it to form a high-gain y-polarized plane wave with concentrated energy, which is then radiated out from the second dielectric layer 100. The electromagnetic wave folds twice in the phase modulation unit, reducing the overall antenna profile height H to half the antenna focal length F.

[0031] In this process, at a high frequency of 38 GHz, x-polarized electromagnetic waves are incident from the feed structure 200, undergo total reflection from the lower surface of the metal layer 500 to the upper surface of the first dielectric layer 300. The second dielectric layer 100 performs repolarization reflection on the high-frequency incident wave and simultaneously performs phase compensation, converting the reflected wave into a y-polarized high-gain plane wave, which ultimately passes through the metal layer 500. The electromagnetic wave folds twice in the phase modulation unit, reducing the overall antenna profile height H to half the antenna focal length F.

[0032] Among them, such as Figure 4 , Figure 10 As shown, the first metal structure layer includes several arrayed high-frequency reflection phase modulation units. Two adjacent high-frequency reflection phase modulation units are close to each other. Each high-frequency reflection phase modulation unit includes a first dipole and a second dipole arranged in a cross configuration. The first dipole includes two first dipole portions 311, and a first arc-shaped structure 314 is provided at one end of the two first dipole portions 311 facing each other. The second dipole includes two second dipole portions 312, and a second arc-shaped structure 313 is provided at one end of the two second dipole portions 312 facing each other.

[0033] In other words, the high-frequency reflection phase modulation unit of this application reduces the size of the phase modulation unit in a limited space by adding an arc structure to the end of the traditional cross dipole, thereby achieving small-sized 360° continuous phase modulation and simultaneous polarization.

[0034] like Figure 4 , Figure 10 and Figure 11 As shown, the first dipole portion 311 or the second dipole portion 312 of four high-frequency reflection phase modulation units connected at the same position at their ends form a high-frequency 360° continuous phase modulation unit. It is particularly important to note that 360° phase modulation is typically achieved by modifying the dimensions. However, conventional reflection phase modulation units are relatively large, and during phase modulation, the phase modulation dimensions at some angles become excessively large. If ordinary phase modulation units are used, they can easily block lower-layer units during phase modulation, severely affecting low-frequency transmission performance and causing interference between high-frequency and low-frequency units. Therefore, the miniaturized high-frequency 360° continuous phase modulation unit of this application is crucial, as it can minimize the mutual interference between low-frequency transmission and high-frequency reflection.

[0035] Among them, such as Figure 4 As shown, the width of the first dipole portion 311 The inner radius of the first arc-shaped structure 314 is 0.4 mm. The thickness between the inner and outer sides of the first arc-shaped structure 314 is 1.2 mm. The width of the second dipole portion 312 is 0.2 mm. The inner radius of the second arc-shaped structure 313 is 0.2 mm. The thickness between the inner and outer sides of the second arc-shaped structure 313 is 0.8 mm. It is 0.2mm.

[0036] In some other embodiments, the second metal structure layer 320 includes multiple arrayed polarization-sensitive frequency selective surfaces with a centrally located perforated structure 321. The perforated structure 321 is offset from the high-frequency 360° continuous phase-tuning unit. This polarization-sensitive frequency selective surface not only possesses frequency selectivity characteristics for high-frequency transmission and low-frequency reflection but also polarization-sensitive characteristics. Specifically, the second metal structure layer 320 can only transmit electromagnetic waves of a single polarization and cannot transmit electromagnetic waves of another polarization, thus serving as a ground plane for high-frequency reflection. The offset arrangement of the perforated structure 321 from the high-frequency 360° continuous phase-tuning unit minimizes the mutual interference between low-frequency transmission and high-frequency reflection.

[0037] The hollow structure 321 includes two first channels 3211 with overlapping ends, the included angle between the two first channels 3211 is 90°, and a second channel 3212 is provided on each side of the two first channels 3211 facing each other.

[0038] Specifically, such as Figure 4 and Figure 6 As shown, the hollow structure 321 is A-shaped. In the embodiment shown in this application, the length of the first channel 3211 is... The width of the first channel 3211 is set to 2.33mm. The length of the second channel 3212 is set to 0.45mm. The width of the second channel 3212 is set to 0.8mm. The thickness is set to 0.3mm. The A-shaped planar polarization-sensitive frequency-selective surface is the key to this unit's ability to selectively transmit and reflect electromagnetic waves at high and low frequencies.

[0039] The third metal structure layer includes several arrayed low-frequency continuous phase modulation units 110. Each low-frequency continuous phase modulation unit 110 includes a first notched ring 111 and a second notched ring 112 arranged concentrically. The opening orientation of the first notched ring 111 is offset from the opening orientation of the second notched ring 112, and the second notched ring 112 is located inside the first notched ring 111.

[0040] In this embodiment, the first notched ring 111 and the second notched ring 112 are C-shaped ring structures. By adjusting the opening angle of the two C-shaped rings, 360° continuous phase modulation at low frequencies can be achieved.

[0041] like Figure 4 , Figure 7 , Figure 12 and Figure 13 As shown, the notch orientation of the first notch ring 111 is opposite to that of the second notch ring 112, and the notch opening angle of the first notch ring 111 is equal to the notch opening angle of the second notch ring 112.

[0042] In the embodiments shown in this application, the radius of the first notched ring 111 The width between the inner and outer sides of the first notch ring 111 is set to 1.48mm. The radius of the second notch ring 112 is set to 0.15. The width between the inner and outer sides of the first notch ring 111 is set to 1.18 mm. Set to 0.2mm.

[0043] Among them, such as Figure 4 As shown, the misalignment of the first notch ring 111 or the second notch ring 112 with the high-frequency 360° continuous phase modulation unit can minimize the mutual interference between low-frequency transmission and high-frequency reflection.

[0044] Among them, such as Figure 3 and Figure 9 As shown, the thickness of the metal layer 500 is 0.4 mm. The metal layer 500 includes an array of first metal grid strips 510. The distance between two adjacent first metal grid strips 510 is set to 1.2 mm, and the width of the first metal grid strip 510 is set to 0.6 mm.

[0045] like Figure 8 and Figure 12 As shown, the fourth metal structure layer 120 includes an array of second metal grid strips 121, and the distance between two adjacent second metal grid strips 121 is... The width of the first metal grille strip 510 is set to 1.1mm. Set to 0.8mm.

[0046] It should be noted that the first and second metal structural layers 320 form a reflection module, which can achieve 360° phase modulation of the 38 GHz center frequency electromagnetic wave, thereby focusing the electromagnetic wave energy and forming a high-gain reflected beam. The second, third, and fourth metal structural layers 120 constitute a transmission module, ensuring 360° phase modulation of the 28 GHz center frequency electromagnetic wave, thereby focusing the electromagnetic wave energy and forming a high-gain transmission beam.

[0047] The first metal structure layer, along with the second and third metal structure layers 320 and 320, is arranged in an alternating pattern. This design significantly reduces the coupling and mutual interference between high-frequency and low-frequency electromagnetic waves, ensuring that the transmitted and reflected waves of both frequencies can be independently controlled and adjusted. If all units were placed in the center, the high-frequency units of the first metal structure layer would severely obstruct the second and third metal structure layers 320, causing significant interference. Therefore, the reflective units of the first metal structure layer need to be miniaturized and arranged diagonally to minimize the obstruction and interference from the upper units to the lower units.

[0048] like Figure 12 As shown, the feed structure 200 includes a feed transmitter 210 and a feed power supply 220. The feed transmitter 210 is located at the center of the second dielectric layer 100, and the first dielectric layer 300 is perforated opposite the feed transmitter 210. The feed power supply 220 is located at the edge of the second dielectric layer 100. The feed transmitter 210 and the feed power supply 220 are directly integrated into the second dielectric layer 100, with the feed power supply 220 extended to the side of the antenna for side feeding. This design effectively reduces feed obstruction and ensures stable back-facing 0° radiation.

[0049] Figure 14 and Figure 15 The images show the gain plots for the E-plane and H-plane of the far-field radiation at 28 GHz, respectively. Figure 16 and Figure 17 The figures show the gain diagrams for the far-field radiation E-plane and H-plane at 38 GHz, respectively. The horizontal axis represents the angular coordinate position of the invention in the far field, and the vertical axis represents the normalized gain, including co-polarization and cross-polarization. This figure demonstrates that the antenna can achieve a forward (theta=0°) beam at 28 GHz and a reverse (theta=180°) beam at 38 GHz, characterized by high gain, low sidelobes, and low cross-polarization.

[0050] In summary, the main beneficial effects of this application are as follows: 1: Overall architecture design of the integrated transmissive and reflective antenna ( Figure 1 As shown in the figure, through architectural design, the selective electromagnetic wave transmission and reflection functions at two frequencies are achieved using only one feed source, and the profile height is reduced to half of that of the traditional design, which greatly reduces the overall size of the antenna.

[0051] 2: Antenna unit design ( Figure 2 Figure 3 As shown, the dielectric layer antenna element is implemented using only two dielectric substrates, while other existing technologies require five to six dielectric substrates to achieve the function of this antenna. This can greatly reduce the overall processing complexity and manufacturing cost of the antenna, and has a very high cost and processing advantage.

[0052] 3: This invention designs a method that uses only two dielectric layers to simultaneously achieve electromagnetic wave transmission and reflection, polarization, and 360° continuous phase modulation, thereby realizing forward and backward beam energy focusing. This is based on... Figure 4 and Figure 5The basic principle of the novel unit design is based on the miniaturized high-frequency phase-modulation unit, which is interleaved with the underlying structure to minimize coupling and mutual interference between the high-frequency and low-frequency units. The unit also features an A-shaped planar polarization-sensitive frequency-selective surface, which is crucial for achieving selective transmission and reflection of electromagnetic waves at both high and low frequencies.

[0053] 4: The arrangement of the second metal structure layer 320, the third metal structure layer, and the fourth metal structure layer 120 creates an innovative structure with the same complexity as a traditional transmission unit, but capable of achieving frequency-selective transmission and reflection. Based on the traditional transmission unit, the upper surface is modified into the involved A-shaped planar polarization-sensitive frequency-selective surface, realizing the function of reflecting one frequency while continuing to transmit and modulate the phase of another frequency.

[0054] 5: Design of integrated broadband feeder Figure 12 The broadband feed shown demonstrates the principle and shape design of an ultra-wideband integrated feed design achieving over 50% bandwidth, with the circuitry directly led to the side of the antenna for feeding. By integrating the feed directly onto the third dielectric layer and then leading the circuitry to the side of the antenna, side feeding significantly reduces the problem of feed obstructing back-side radiation, while simultaneously achieving a stable 0° back-facing radiation beam.

[0055] Compared to existing technologies, this application offers significant advantages in cost, frequency band application, size, ease of integration, and stability. The frequency bands used in this application are 38GHz and 28GHz, which are widely used in 5G / 6G. The forward and backward 38GHz and 28GHz bands have significant application scenarios in drone-to-ground and inter-satellite communications. The cross-sectional height of this application is only half that of existing traditional designs, with an overall size of only 96mm*96mm and a height of only 35mm, which greatly reduces volume and deployment difficulty.

[0056] Meanwhile, this application achieves complex functions using only two dielectric substrates and one metal plate, while existing technologies require five to six dielectric substrates and multi-layer stacking and bonding to achieve similar functions. This design significantly reduces the antenna's processing difficulty and manufacturing cost. Furthermore, this application features an integrated broadband feed source, directly integrated into the metasurface, allowing for direct feeding from the side port. Compared to existing technologies, this improves the overall system integration and stability. Additionally, the side-feed design contrasts with existing technologies that directly feed the horn from the back using a coaxial cable. Existing technologies, while blocking the back-facing radiation beam, also significantly increase the stability of the back-facing radiation beam due to cable movement, making a stable 0° back-facing radiation beam impossible. The solution adopted in this application reduces back-facing beam blocking while achieving a stable 0° back-facing radiation beam.

[0057] The embodiments of this application have been described in detail above with reference to the accompanying drawings. However, this application is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of this application.

Claims

1. A dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna, characterized in that: It includes a feed structure and a metal layer, a first dielectric layer and a second dielectric layer arranged in sequence. The feed structure is disposed on the second dielectric layer and is used to emit polarized electromagnetic waves. The metal layer is used to reflect y-polarized electromagnetic waves and x-polarized electromagnetic waves. A first metal structure layer and a second metal structure layer are respectively disposed on both sides of the first dielectric layer. The first metal structure layer faces the metal layer. The first metal structure layer includes a high-frequency reflection phase modulation unit. The second metal structure layer is used for the transmission of high-frequency polarized electromagnetic waves and the reflection of low-frequency polarized electromagnetic waves, so that the reflection module formed by the first metal structure layer and the second metal structure layer can be used for continuous phase modulation of high-frequency polarized electromagnetic waves. A third metal structure layer and a fourth metal structure layer are respectively disposed on both sides of the second dielectric layer. The third metal structure layer faces the first dielectric layer. The third metal structure layer includes a low-frequency continuous phase modulation unit. The fourth metal structure layer is used to transmit x-polarized electromagnetic waves and reflect y-polarized electromagnetic waves. The transmission module composed of the second metal structure layer, the third metal structure layer and the fourth metal structure layer can be used for continuous phase modulation of low-frequency polarized electromagnetic waves.

2. The dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna according to claim 1, characterized in that: The first metal structure layer includes a plurality of arrayed high-frequency reflection phase modulation units. Each high-frequency reflection phase modulation unit includes a first dipole and a second dipole arranged in a cross configuration. The first dipole includes two first dipole portions, and a first arc-shaped structure is provided at one end of the two first dipole portions facing each other. The second dipole includes two second dipole portions, and a second arc-shaped structure is provided at one end of the two second dipole portions facing each other.

3. The dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna according to claim 2, characterized in that: The first dipole portion or the second dipole portion of the four high-frequency reflection phase modulation units whose ends are connected at the same position form a high-frequency 360° continuous phase modulation unit.

4. The dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna according to claim 3, characterized in that: The second metal structure layer includes multiple arrayed polarization-sensitive frequency selection surfaces with a centrally hollowed-out structure, the hollowed-out structure being offset from the high-frequency 360° continuous phase modulation unit.

5. The dual-frequency millimeter-wave high-gain low-profile transmission / reflection integrated antenna according to claim 4, characterized in that: The hollow structure includes two first channels with overlapping ends, the angle between the two first channels is 90°, and a second channel is provided on each side of the two first channels facing each other.

6. The dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna according to claim 3, characterized in that: The third metal structure layer includes a plurality of arrayed low-frequency continuous phase modulation units. Each low-frequency continuous phase modulation unit includes a first notched ring and a second notched ring arranged concentrically. The opening orientation of the first notched ring is opposite to that of the second notched ring, and the second notched ring is located inside the first notched ring.

7. The dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna according to claim 6, characterized in that: The notch opening angle of the first notch ring is equal to the notch opening angle of the second notch ring.

8. The dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna according to claim 6, characterized in that: The first notched ring or the second notched ring is misaligned with the high-frequency 360° continuous phase modulation unit.

9. The dual-frequency millimeter-wave high-gain low-profile transmission and reflection integrated antenna according to claim 1, characterized in that: The focal length of the dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna is defined as F, and the profile height of the dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna is defined as H, where F is equal to twice H.

10. The dual-frequency millimeter-wave high-gain low-profile transmission-reflection integrated antenna according to claim 1, characterized in that: The feed structure includes a feed transmitter and a feed power supply. The feed transmitter is located at the center of the second dielectric layer. The first dielectric layer is hollowed out at the position opposite to the feed transmitter. The feed power supply is located at the edge of the second dielectric layer.

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