A large-area perovskite battery module with buried bottom interface enhancement and a preparation method thereof

Abstract

The application discloses a buried bottom interface reinforced large-area perovskite battery module and a preparation method thereof, and relates to the field of solar cells. The buried bottom interface of the large-area perovskite battery module is composed of a hole transport layer, an interface reinforcing layer and a self-assembled monolayer, wherein the interface reinforcing layer is an interface regulating layer of a potassium hydroquinone sulfate coordination structure, the interface regulating layer is coordinated with metal ions on the surface of a metal oxide through phenolic hydroxyl groups and is passivated, and sulfate groups anchor under-coordinated lead ions, so as to form a dual-functional buried bottom interface coupling structure. The high oxidation state defects on the surface of the magnetron sputtering NiOx film are passivated through the potassium hydroquinone sulfate interface reinforcing layer, the combination between the NiOx and the SAM is enhanced, and the stability of the large-area perovskite battery is improved.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, specifically to a large-area perovskite module with buried interface enhancement and its preparation method. Background Technology

[0002] Currently, large-area inverted perovskite solar cell modules typically use a hole transport layer (HTL) composed of NiOx and a self-assembled monolayer (SAM). However, solution-deposited NiOx films often exhibit uneven coverage, leading to significant on-state voltage and filler losses. Therefore, it is necessary to explore methods for uniform NiOx film deposition. Magnetron sputtering (PVD) is an effective alternative method, offering low production costs and the ability to deposit uniformly over large areas, making it suitable for industrial-scale production. Combining PVD-deposited NiOx films with SAM provides a more feasible option for the industrialization of large-area inverted perovskite solar cell modules.

[0003] However, PVD deposition of NiOx films also presents some challenges. Compared to pre-synthesized NiOx nanocrystals, PVD-deposited NiOx exhibits lower crystallinity and a more complex surface chemical composition. 3+ Ni 4+ The presence of numerous deep-level defects and a low surface hydroxyl density results in weaker anchoring of SAM molecules on NiOx, which in turn reduces the wettability of the perovskite layer on HTL, leading to a higher number of pores and uneven film formation in the coated perovskite film.

[0004] Existing technologies have employed various methods to improve the crystallinity and wettability of NiOx, such as plasma treatment and high-temperature annealing. While these methods improve NiOx crystallinity, they do not improve the wettability of SAM on NiOx, still leading to porosity in the perovskite coating. Other methods involve hydrophilicating NiOx, which improves SAM wettability, but this also results in a large amount of highly oxidized Ni. 4+ These components react with halide ions in the perovskite, affecting the stability of perovskite solar cells. This instability at the NiOx-SAM interface severely hinders the industrialization of large-area perovskite solar cells.

[0005] Therefore, more effective strategies need to be developed to passivate the high oxidation state defects of sputtered NiOx films, enhance the bonding between NiOx and SAM, and improve the stability of large-area perovskite solar cells. Summary of the Invention

[0006] To address the problems existing in the prior art, the purpose of this invention is to provide a large-area perovskite battery module with buried interface enhancement. By introducing an interface enhancement layer between NiOx and SAM, the anchoring of SAM on NiOx is enhanced, while the high oxidation state defects on the NiOx surface are passivated, which greatly improves the wettability and intrinsic stability of perovskite on the hole transport layer.

[0007] Another objective of this invention is to provide a method for fabricating such a large-area perovskite battery module with an enhanced buried interface.

[0008] To achieve the above-mentioned objectives, the present invention adopts the following technical solution:

[0009] A large-area perovskite solar cell module with a buried interface enhancement is disclosed. The buried interface of the large-area perovskite solar cell module is composed of a hole transport layer, an interface enhancement layer, and a self-assembled monolayer. The interface enhancement layer is an interface regulation layer with a hydroquinone potassium sulfate coordination structure. The interface regulation layer has a bifunctional buried interface coupling structure formed by the coordination and passivation of metal ions on the surface of metal oxides by phenolic hydroxyl groups and the anchoring of undercoordinated lead ions by sulfate groups.

[0010] In some specific implementations, the large-area perovskite solar cell module consists of a back electrode, a hole blocking layer, an electron transport layer, a perovskite layer, a self-assembled monolayer, an interface reinforcement layer, a hole transport layer, and a transparent conductive substrate.

[0011] In another aspect of the present invention, the method for fabricating the aforementioned large-area perovskite solar cell module with buried interface enhancement includes the following steps:

[0012] S1. Substrate cleaning: The transparent conductive substrate is laser-etched with P1 lines, and then ultrasonically cleaned with isopropanol, ethanol and pure water in sequence. The cleaning time is preferably 15-30 minutes. After drying, it is ready for use.

[0013] S2. Preparation of hole transport layer: The transparent conductive substrate described in S1) is subjected to plasma treatment and then transferred to a magnetron sputtering (PVD) equipment. After the nickel oxide magnetron sputtering cavity is evacuated to a vacuum, Ar gas and O2 gas are introduced, the sputtering power supply is turned on, and sputtering is performed using a nickel oxide target to obtain a nickel oxide hole transport layer.

[0014] S3. Preparation of the interface reinforcement layer: The interface reinforcement layer potassium hydroquinone sulfate is coated on the hole transport layer and then annealed to obtain the interface reinforcement layer.

[0015] S4. Preparation of self-assembled monolayer (SAM): SAM is coated on the interface reinforcement layer and then annealed to obtain a self-assembled monolayer.

[0016] S5. Preparation of the perovskite layer: A perovskite layer is coated on the self-assembled monolayer, vacuum dried (VCD) and then annealed to obtain the perovskite layer.

[0017] S6. Preparation of electron transport layer: Electron transport layer is deposited on the perovskite layer by vapor deposition;

[0018] S7. Preparation of hole blocking layer: A hole blocking layer is prepared on the electron transport layer. The hole blocking layer is either evaporated copper bath (BCP) or atomic layer deposited tin oxide (SnOx). Then, laser P2 scribing is performed on the prepared hole blocking layer.

[0019] S8. Preparation of the top electrode: The top electrode is prepared on the hole blocking layer, and then laser P3 scribing and laser P4 edge cleaning are performed on the prepared top electrode; preferably, the top electrode is a thermally evaporated Cu or PVD ITO-Cu-ITO sandwich electrode, and the film thickness of the top electrode is 100-150nm.

[0020] In some specific implementations, in the preparation of the hole transport layer in step S2, the sputtering power is 800-1000W, the introduced Ar:O2 = 600:1-4sccm, and the thickness of the nickel oxide film is 10-20nm.

[0021] In some specific implementation schemes, the solvent for the interface reinforcement layer in step S3 is one or more of N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), ethanol (ETOH), and isopropanol (IPA), with a concentration of 0.5-1 mg / mL, an annealing temperature of 100-120℃, and an annealing time of 10-20 min.

[0022] In some specific implementation schemes, in step S4, SAM is one or more of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphoric acid (Me-4PACz), [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphoric acid (Ph-4PACz), and [2-(9H-9'-phenyl-3,3'-dibicarbazole-9-yl)butyl]phosphoric acid (4PABCz), and the solvent is a mixed solvent of NMP and ETOH;

[0023] Preferably, the concentration of SAM is 0.2-0.5 mg / mL; the volume ratio of the mixed solvent is NMP:ETOH = (1-3):4;

[0024] More preferably, the annealing temperature for the annealing treatment is 100-120℃, and the annealing time is 10-20min.

[0025] In some specific implementation schemes, the process conditions for the VCD in step S5 are: vacuum degree: 5-10 Pa, vacuuming time: ≤10 s, and voltage stabilization time: 10-30 s.

[0026] Preferably, the annealing temperature for the annealing treatment is 100-120℃, and the annealing time is 30-50 min;

[0027] More preferably, the thickness of the perovskite layer is 400~600 nm.

[0028] In some specific implementations, the electron transport layer in step S6 is a fullerene (C60) with a film thickness of 25-40 nm.

[0029] In some specific implementations, the thickness of the BCP film in step S7 is 5-8 nm, and the thickness of the SnOx film is 20-30 nm.

[0030] In some specific implementations, the line width of the laser-etched P1 line is 20-30μm, the interval between adjacent P1 lines is 5-7mm, the line width of P2 is 50-60μm, the line width of P3 is 20-30μm, and the total width of the dead zone is 160-180μm.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] The interface enhancement layer of the perovskite solar cell of this invention is an interface regulation layer with a potassium hydroquinone sulfate coordination structure, wherein the phenolic hydroxyl groups in the potassium hydroquinone sulfate reduce the highly oxidized Ni. 4+ Ni was added 3+ / Ni 2+ The ratio reduced Ni 4+ / Ni 3+ The proportion reduces the instability of the buried interface caused by NiOx.

[0033] In the perovskite solar cell of the present invention, the phenolic hydroxyl groups in the potassium hydroquinone sulfate in the interface enhancement layer can form Ni–OH with the NiOx surface, promote the condensation of SAM phosphate groups, thereby enhancing the anchoring of SAM on nickel oxide and improving the wettability of perovskite on HTL.

[0034] In the perovskite solar cell of this invention, the sulfate ions in the potassium hydroquinone sulfate in the interface enhancement layer help anchor the undercoordinated Pb at the perovskite buried interface. 2+ This further passivates defects and improves intrinsic stability.

[0035] In the perovskite battery of this invention, there is a π-π stacking effect between the p-benzene ring in the potassium hydroquinone sulfate and the aromatic structure of SAM in the interface enhancement layer, which promotes the orderly arrangement of molecules, reduces the interface energy, and facilitates the uniform distribution of SAM. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the perovskite battery module of the present invention.

[0037] Figure 2 This is an IV curve diagram of the perovskite module in Embodiment 1 of the present invention.

[0038] Figure 3 This is an IV curve diagram of the perovskite module in Embodiment 2 of the present invention.

[0039] Figure 4 This is the IV curve diagram of the perovskite module of Comparative Example 1 of the present invention.

[0040] Figure 5 This is a water contact angle diagram of the buried interface in Embodiment 1 and Comparative Example 1 of the present invention.

[0041] Figure 6 The images show the light stability data of the perovskite components in Embodiment 1 and Comparative Example 1 of the present invention. Detailed Implementation

[0042] To make the technical problem to be solved by the present invention, the technical solution, and the beneficial effects clearer, the present invention will be further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely for explaining the present invention and are not intended to limit the present invention.

[0043] As attached Figure 1 As shown, the large-area perovskite solar cell module with buried interface enhancement according to the present invention comprises a transparent conductive substrate, a hole transport layer, an interface enhancement layer, a self-assembled monolayer, a perovskite layer, an electron transport layer, a hole blocking layer, and a back electrode. The interface enhancement layer is potassium hydroquinone sulfate. The hole transport layer, the interface enhancement layer, and the self-assembled monolayer constitute the buried interface of the perovskite cell, located between the perovskite layer and the transparent conductive substrate. Due to the specific structure of the potassium hydroquinone sulfate interface enhancement layer, it has the effect of coupling a bifunctional buried interface through the coordination and passivation of metal ions on the surface of the metal oxide by phenolic hydroxyl groups and the anchoring of undercoordinated lead ions by sulfate groups.

[0044] In this invention, the transparent conductive substrate is either pretreated ITO conductive glass or FTO conductive glass. The transparent conductive substrate of this invention is a commonly used substrate in the art, and can be etched and cleaned with reference to existing techniques, without particular limitations. For example, FTO glass can be cleaned sequentially with glass cleaning solution, isopropanol, and deionized water for, for example, 10 min, 15 min, 20 min, 25 min, and 30 min, and then dried with nitrogen gas to obtain a clean FTO conductive substrate.

[0045] Then, laser P1 lines are scribing is performed on a clean FTO substrate. The linewidth of the P1 lines is 20-30 μm, for example, 25 μm, and the spacing between adjacent P1 lines is 5-7 mm, for example, 6 mm. After repeating the cleaning steps, the FTO substrate with scribed P1 lines is subjected to plasma treatment for 5 min, followed by magnetron sputtering of nickel oxide. The volume ratio of argon to oxygen in the process atmosphere is controlled at 600:1, and the sputtering power is 1000 W, to obtain nickel oxide with a thickness of 10-20 nm. Then, it is annealed at 200 °C for 1 h in a 25%RH environment.

[0046] Furthermore, a hydroquinone sulfate interface reinforcement layer is slit-coated onto the cooled nickel oxide. The slit gap value is 60 μm, the platform moving speed is 20 mm / s, and the solvent for the interface reinforcement layer is one or more of N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), ethanol (ETOH), and isopropanol (IPA). The concentration of the interface reinforcement layer is 0.5-1 mg / mL. After coating, the coating is annealed in an annealing furnace under the following conditions: annealing at 100-120℃ for 10-20 min in an air environment with a humidity of 15-30%RH.

[0047] After cooling, a self-assembled monolayer is coated, wherein the self-assembled monolayer is one or more of Me-4PACz, Ph-4PACz, and 4PABCz; the solvent is a mixed solvent of NMP and ETOH with a concentration of 0.2-0.5 mg / ml; the slit gap value is 60 μm and the platform moving speed is 20 mm / s; the SAM layer is obtained by annealing at 100 °C for 10 min in a 25% RH environment.

[0048] The perovskite precursor solution was then coated onto a self-assembled monolayer with a slot coating gap of 80 μm and a platform movement speed of 20 mm / s. The coated perovskite wet film was then flash-evaporated at a maximum negative pressure of 10 Pa, reaching the maximum negative pressure within 10 s. After stabilizing the pressure for 30 s, it was annealed in an annealing furnace at 100-120 °C for 30-50 min in an air environment with 15-30% RH, yielding a perovskite layer with a thickness of 400-600 nm. The perovskite precursor solution is not particularly limited and can be any commonly used perovskite precursor solution in this field.

[0049] After cooling to room temperature, an electron transport layer and a hole blocking layer are prepared on the perovskite layer. For example, 25-40 nm of C60 and 20 nm of SnOx are deposited by vacuum evaporation; further, laser scribing is performed on P2 with a linewidth of 50-60 μm.

[0050] Finally, the back electrode is fabricated on the hole-blocking layer. For example, a Cu electrode of 100-150 nm is formed by vacuum evaporation or an ITO-Cu-ITO sandwich electrode of 100-150 nm is formed by magnetron sputtering. After the back electrode is fabricated, laser scribing is performed on P3, with a line width of 20-30 μm. Then, laser edge cleaning is performed to obtain the large-area perovskite solar cell module with buried interface enhancement of the present invention.

[0051] In this invention, the transparent conductive substrate, hole transport layer, self-assembled monolayer, electron transport layer, hole blocking layer and back electrode, unless otherwise specified, can be referred to the prior art, which is well known to those skilled in the art, and will not be described in detail here.

[0052] The present invention will be further explained and illustrated below through more specific embodiments, but these do not constitute any limitation.

[0053] The main sources of the raw materials used in the following examples are as follows:

[0054] Cesium iodide (CsI, 99.99%), formamidine iodide (FAI, 99.5%), C60 (99%), Me-4PACz, Ph-4PACz, and BCP (99.5%) were purchased from Xi'an Yulu Solar Energy; lead iodide (PbI2, 99.99%) was purchased from TCI; potassium hydroquinone sulfate (≥98%) was purchased from Aladdin; unless otherwise specified, other chemical reagents were obtained from Sigma-Aldrich. All purchased chemicals were used directly without purification.

[0055] Example 1

[0056] A method for fabricating a large-area perovskite solar cell module with embedded interface enhancement is described below:

[0057] (1) First, laser scribing was performed on a clean FTO substrate to form lines P1, with a line width of 20 μm and a spacing of 5 mm between adjacent P1 lines. After repeating the cleaning steps, plasma treatment was performed on the FTO substrate with scribed P1 lines for 5 min, followed by magnetron sputtering of nickel oxide. The volume ratio of argon to oxygen in the process atmosphere was controlled at 600:1, and the sputtering power was 1000 W, to obtain nickel oxide with a thickness of 10 nm. Annealing was carried out at 200 °C for 1 h in a 25%RH environment.

[0058] (2) A hydroquinone sulfate interface reinforcement layer was applied to the cooled nickel oxide through a slit. The slit gap value was 60 μm, the platform moving speed was 20 mm / s, the solvent of the interface reinforcement layer was a mixed solvent of NMP:IPA = 1:1 (volume ratio), and the concentration of hydroquinone sulfate was 0.5 mg / mL. After coating, the mixture was annealed at 100 °C for 10 min in an air environment with a humidity of 25%RH.

[0059] (3) After cooling, a self-assembled monolayer is coated, wherein the self-assembled monolayer is Ph-4PACz:4PABCz=1:1 (molar ratio); the solvent is a mixed solvent of NMP:ETOH=2:3 (volume ratio) with a concentration of 0.2mg / ml; the slit gap value is 60μm and the platform moving speed is 20mm / s; and the SAM layer is obtained by annealing at 100℃ for 10min in a 25%RH environment.

[0060] (4) The 1.0M CsFAPbI3 perovskite precursor solution was then coated on the self-assembled monolayer. The gap value of the slit coating was 80μm and the platform moving speed was 20mm / s. The coated perovskite wet film was flash-evaporated. The maximum negative pressure value was 10Pa. The maximum negative pressure value was reached within 10s. After stabilizing the pressure for 30s, it was annealed in an annealing furnace. The annealing conditions were annealing at 120℃ for 30min in an air environment with a humidity of 25%RH to obtain a perovskite layer with a thickness of 600 nm.

[0061] (5) After cooling to room temperature, an electron transport layer and a hole blocking layer are prepared on the perovskite layer. 40 nm of C60 and 20 nm of SnOx are deposited by vacuum evaporation; further, laser scribing is performed on P2 with a linewidth of 50 μm.

[0062] (6) Finally, the back electrode is fabricated on the hole blocking layer. A 150 nm ITO-Cu-ITO sandwich electrode is sputtered by magnetron sputtering; after the back electrode is fabricated, laser scribing is performed on P3, with a line width of 20 μm; then laser edge cleaning is performed to obtain a large-area perovskite solar cell module with buried interface enhancement.

[0063] At AM 1.5, 100 mW / cm 2 Under standard light intensity, such as Figure 2 As shown, the module's reverse scanning open-circuit voltage is 48.70V, short-circuit current is 0.36A, fill factor is 0.79, photoelectric conversion efficiency is 22.08%, and effective area is 628cm². 2 .

[0064] Example 2

[0065] A method for fabricating a large-area perovskite solar cell module with embedded interface enhancement is described below:

[0066] (1) First, laser scribing was performed on a clean FTO substrate to form lines P1, with a line width of 30 μm and a spacing of 5 mm between adjacent P1 lines. After repeating the cleaning steps, plasma treatment was performed on the FTO substrate with scribed P1 lines for 5 min, followed by magnetron sputtering of nickel oxide. The volume ratio of argon to oxygen in the process atmosphere was controlled at 600:4, and the sputtering power was 1000 W, to obtain nickel oxide with a thickness of 20 nm. Annealing was carried out at 200 °C for 1 h in a 25%RH environment.

[0067] (2) A hydroquinone sulfate interface reinforcement layer was applied to the cooled nickel oxide through a slit. The slit gap value was 60 μm, the platform moving speed was 20 mm / s, the solvent of the interface reinforcement layer was a mixed solvent of NMP:IPA = 2:1 (volume ratio), and the concentration of hydroquinone sulfate was 1.0 mg / mL. After coating, the mixture was annealed at 120 °C for 20 min in an air environment with a humidity of 25%RH.

[0068] (3) After cooling, a self-assembled monolayer is coated, wherein the self-assembled monolayer is Ph-4PACz:Me-4PACz=1:1 (molar ratio); the solvent is a mixed solvent of NMP:ETOH=2:3 (volume ratio) with a concentration of 0.5mg / ml; the slit gap value is 60μm and the platform moving speed is 20mm / s; and the SAM layer is obtained by annealing at 100℃ for 10min in a 25%RH environment.

[0069] (4) The 1.0M CsFAPbI3 perovskite precursor solution was then coated on the self-assembled monolayer. The gap value of the slit coating was 80μm and the platform moving speed was 20mm / s. The coated perovskite wet film was flash-evaporated. The maximum negative pressure value was 10Pa. The maximum negative pressure value was reached within 10s. After stabilizing the pressure for 30s, it was annealed in an annealing furnace. The annealing conditions were annealing at 100℃ for 50min in an air environment with a humidity of 25%RH to obtain a perovskite layer with a thickness of 400 nm.

[0070] (5) After cooling to room temperature, an electron transport layer and a hole blocking layer are prepared on the perovskite layer. 25 nm of C60 and 30 nm of SnOx are deposited by vacuum evaporation; further, laser scribing is performed on P2 with a linewidth of 60 μm.

[0071] (6) Finally, the back electrode is fabricated on the hole blocking layer. A 100 nm ITO-Cu-ITO sandwich electrode is sputtered by magnetron sputtering. After the back electrode is fabricated, laser scribing is performed on P3, with a line width of 30 μm. Then, laser edge cleaning is performed to obtain a large-area perovskite solar cell module with buried interface enhancement.

[0072] At AM 1.5, 100 mW / cm 2 Under standard light intensity, such asFigure 3 As shown, the module's reverse scanning open-circuit voltage is 48.79V, short-circuit current is 0.36A, fill factor is 0.79, photoelectric conversion efficiency is 22.22%, and effective area is 628cm². 2 .

[0073] Comparative Example 1

[0074] The same steps and parameters as in Example 1 were used, except that step (2) was removed in Comparative Example 1.

[0075] The fabricated perovskite solar cell module operates at AM 1.5 and 100 mW / cm². 2 Under standard light intensity, such as Figure 4 As shown, the module's reverse scanning open-circuit voltage is 47.00V, short-circuit current is 0.35A, fill factor is 0.77, photoelectric conversion efficiency is 20.43%, and effective area is 628cm². 2 .

[0076] Comparing the IV data of Example 1, Example 2 and Comparative Example 1, it can be seen that the open circuit voltage and fill factor are significantly improved after modifying the potassium hydroquinone sulfate interface layer. This is attributed to the passivation of high oxidation state defects on the NiOx surface by phenol groups and the anchoring of undercoordinated defects on the perovskite buried interface by sulfate groups, which reduces the density of nonradiative recombination and interface trap states.

[0077] To demonstrate the improvement in wettability of the hydroquinone potassium sulfate interfacial reinforcement layer, such as Figure 5 As shown, the water contact angle of the buried interface in Example 1 and Comparative Example 1 was tested. The water contact angle of Comparative Example 1 was 59.33°, while that of Example 1 was only 30.17°. It can be seen that the wettability of the buried interface was significantly improved after modification with potassium hydroquinone sulfate. Higher wettability is beneficial for the uniform coating and dense film formation of the perovskite precursor. The improved wettability is presumably attributed to the π-π stacking effect between the benzene ring and SAM, which lowers the interfacial energy and promotes the uniform distribution of SAM. Furthermore, the anchoring of the phenolic group on NiOx promotes the condensation of SAM phosphate groups, thereby enhancing the anchoring of SAM on NiOx and improving the wettability of perovskite on HTL.

[0078] To evaluate the effect of hydroquinone potassium sulfate on the stability of perovskite modules, an air environment with humidity of 50–60% RH was used, with AM 1.5 and 100 mW / cm². 2 Under standard light intensity illumination, maximum power point tracking was performed on the packaging components of Example 1 and Comparative Example 1, and the results are as follows: Figure 6As shown, in Example 1, the perovskite module with potassium hydroquinone sulfate interface enhancement maintained 90% of its initial efficiency after 1000 hours of continuous illumination, while in Comparative Example 1, the efficiency decreased to 80% of the initial efficiency after 600 hours of continuous illumination. This is attributed to the enhancement and defect passivation of the buried interface by potassium hydroquinone sulfate.

[0079] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A large-area perovskite solar cell module with embedded interface enhancement, characterized in that, The buried interface of the large-area perovskite battery module is composed of a hole transport layer, an interface enhancement layer, and a self-assembled monolayer. The interface enhancement layer is an interface regulation layer with a hydroquinone potassium sulfate coordination structure. The interface regulation layer has a bifunctional buried interface coupling structure formed by the coordination and passivation of metal ions on the surface of metal oxides by phenolic hydroxyl groups and the anchoring of undercoordinated lead ions by sulfate groups.

2. The large-area perovskite solar cell module with embedded interface enhancement according to claim 1, characterized in that, The large-area perovskite solar cell module consists of a back electrode, a hole blocking layer, an electron transport layer, a perovskite layer, a self-assembled monolayer, an interface reinforcement layer, a hole transport layer, and a transparent conductive substrate.

3. The method for fabricating a large-area perovskite battery module with buried interface enhancement as described in claim 1 or 2, characterized in that, Includes the following steps: S1. Substrate cleaning: The transparent conductive substrate is laser-etched with P1 lines, and then ultrasonically cleaned with isopropanol, ethanol and pure water in sequence. The cleaning time is preferably 15-30 minutes. After drying, it is ready for use. S2. Preparation of hole transport layer: The transparent conductive substrate described in S1) is subjected to plasma treatment and then transferred to a magnetron sputtering (PVD) equipment. After the nickel oxide magnetron sputtering cavity is evacuated to a vacuum, Ar gas and O2 gas are introduced, the sputtering power supply is turned on, and sputtering is performed using a nickel oxide target to obtain a nickel oxide hole transport layer. S3. Preparation of the interface reinforcement layer: The interface reinforcement layer potassium hydroquinone sulfate is coated on the hole transport layer and then annealed to obtain the interface reinforcement layer. S4. Preparation of self-assembled monolayer (SAM): SAM is coated on the interface reinforcement layer and then annealed to obtain a self-assembled monolayer. S5. Preparation of the perovskite layer: A perovskite layer is coated on the self-assembled monolayer, vacuum dried (VCD) and then annealed to obtain the perovskite layer. S6. Preparation of electron transport layer: Electron transport layer is deposited on the perovskite layer by vapor deposition; S7. Preparation of hole blocking layer: A hole blocking layer is prepared on the electron transport layer. The hole blocking layer is either evaporated copper bath (BCP) or atomic layer deposited tin oxide (SnOx). Then, laser P2 scribing is performed on the prepared hole blocking layer. S8. Preparation of the top electrode: The top electrode is prepared on the hole blocking layer, and then laser P3 scribing and laser P4 edge cleaning are performed on the prepared top electrode; preferably, the top electrode is a thermally evaporated Cu or PVD ITO-Cu-ITO sandwich electrode, and the film thickness of the top electrode is 100-150nm.

4. The preparation method according to claim 3, characterized in that, In step S2, during the preparation of the hole transport layer, the sputtering power is 800-1000W, the introduced Ar:O2 ratio is 600:1-4sccm, and the thickness of the nickel oxide film is 10-20nm.

5. The preparation method according to claim 3 or 4, characterized in that, In step S3, the solvent for the interface reinforcement layer is one or more of N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), ethanol (ETOH), and isopropanol (IPA), with a concentration of 0.5-1 mg / mL, an annealing temperature of 100-120℃, and an annealing time of 10-20 min.

6. The preparation method according to claim 3, characterized in that, In step S4, SAM is one or more of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphoric acid (Me-4PACz), [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphoric acid (Ph-4PACz), and [2-(9H-9'-phenyl-3,3'-dibicarbazole-9-yl)butyl]phosphoric acid (4PABCz), and the solvent is a mixture of NMP and ETOH. Preferably, the concentration of SAM is 0.2-0.5 mg / mL; the volume ratio of the mixed solvent is NMP:ETOH = (1-3):4; More preferably, the annealing temperature for the annealing treatment is 100-120℃, and the annealing time is 10-20min.

7. The preparation method according to claim 3, characterized in that, The VCD process conditions described in step S5 are: vacuum degree: 5-10 Pa, vacuuming time: ≤10 s, voltage stabilization time: 10-30 s; Preferably, the annealing temperature for the annealing treatment is 100-120℃, and the annealing time is 30-50 min; More preferably, the thickness of the perovskite layer is 400-600 nm.

8. The preparation method according to claim 3, characterized in that, The electron transport layer in step S6 is fullerene (C60) with a film thickness of 25-40 nm.

9. The preparation method according to claim 3, characterized in that, The thickness of the BCP film in step S7 is 5-8 nm, and the thickness of the SnOx film is 20-30 nm.

10. The preparation method according to any one of claims 3-9, characterized in that, The laser-etched lines P1 have a line width of 20-30 μm, with an interval of 5-7 mm between adjacent P1 lines. The line width of P2 is 50-60 μm, the line width of P3 is 20-30 μm, and the total width of the dead zone is 160-180 μm.

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