Power semiconductor module and power device

Abstract

The application discloses a power semiconductor module and a power device, the module comprising: a substrate, the substrate comprising a plurality of conductive parts and at least one chip set, the chip set comprising a plurality of chips in parallel, the plurality of conductive parts comprising a first conductive part electrically connected with a source electrode of the chip; a plurality of terminal structures, the terminal structure comprising a supporting part and a terminal leg and a lead connected with the supporting part, the lead being spaced apart from the substrate, and the terminal leg being electrically connected with the conductive part; the plurality of terminal structures comprising a common source terminal structure; in the common source terminal structure, the lead comprises an auxiliary source electrode driving lead, the terminal leg is electrically connected with the first conductive part, and the common source terminal structure further comprises a power terminal connected with the supporting part. In the application, the common source terminal structure is integrated with the power terminal and the auxiliary source electrode driving lead, which is beneficial to realizing the same opening and closing and current sharing of the parallel chips.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a power semiconductor module and a power device. Background Technology

[0002] Power semiconductor modules are primarily used to convert direct current (DC) to alternating current (AC), which is then supplied to loads such as industrial motors. Internally, power semiconductor modules contain multiple devices such as transistors, and they utilize terminal components to achieve electrical transmission between the module and external systems.

[0003] The terminal elements of a power semiconductor module include power terminals. When the module receives a conduction voltage, a low-resistance path can be formed between the power terminals, allowing current to flow within the module. The terminal elements of a power semiconductor module also include drive terminals, which are mainly responsible for transmitting the gate control signal generated by the external gate driver to the gate of the internal device of the module, thereby controlling the on / off state of the device.

[0004] Currently, drive terminals in power semiconductor modules typically use leaded terminals or pad-type terminals. For example, for multiple parallel-connected transistor devices within the module, the gates of these parallel devices can be led out to the drive terminals using metal wires. However, leaded or pad-type drive terminals increase the inductance of the drive circuit, which may lead to uneven current distribution in the parallel devices within the power semiconductor module. Summary of the Invention

[0005] This invention provides a power semiconductor module and a power device to solve the problem of uneven current distribution that may exist in parallel devices of existing power semiconductor modules.

[0006] According to one aspect of the present invention, a power semiconductor module is provided, comprising: A substrate, the substrate including a plurality of conductive portions and at least one chipset, the chipset including a plurality of chips connected in parallel, the plurality of conductive portions including a first conductive portion electrically connected to the source of the chips; Multiple terminal structures, each terminal structure including a support portion and pins and terminals connected to the support portion, wherein the pins have a gap with the substrate and the terminals are electrically connected to the conductive portion; The plurality of terminal structures include a common source terminal structure; in the common source terminal structure, the pins include auxiliary source drive pins, the terminals are electrically connected to the first conductive part, and the common source terminal structure also includes a power terminal connected to the support part.

[0007] According to another aspect of the present invention, a power device is provided, comprising: a power semiconductor module as described above.

[0008] In this invention, the power semiconductor module includes at least one common-source terminal structure. The common-source terminal structure includes a support portion and a pin connected to the support portion. The pin of the common-source terminal structure is electrically connected to the source of the chip through a first conductive portion. The common-source terminal structure also includes pins connected to the support portion and power terminals connected to the support portion. The pins in the common-source terminal structure include auxiliary source drive pins. That is, both the auxiliary source drive pins and the power terminals in the common-source terminal structure are connected to the support portion. This achieves the integration of the auxiliary source drive pins and the power terminals on the same support portion in the common-source terminal structure. The power terminals and auxiliary source drive pins integrated in the common-source terminal structure are electrically connected to corresponding external circuits. The auxiliary source drive pins are suspended relative to the substrate. Therefore, the auxiliary source drive pins do not occupy the surface space of the substrate. There is no need to set the auxiliary source drive terminals separately on the substrate, which can free up more installation space on the substrate. This is beneficial for installing more chips on the substrate, improving the integration and chip density of the power semiconductor module, reducing module manufacturing costs, improving compatibility, and reducing packaging costs and processing difficulty. On the other hand, in the common source terminal structure, the power terminal and the auxiliary source drive pin are integrated together, and the first conductive part directly contacts the common source terminal structure. Therefore, there is no need to use a metal wire to lead out between the conductive part and the auxiliary source drive pin. This can reduce the drive circuit of the auxiliary source of the chip, minimize the inductance of the drive circuit, facilitate the simultaneous switching on and off of parallel chips, improve the current carrying capacity, avoid the problem of uneven current flow, and improve the mechanical and electrical reliability of the power semiconductor module.

[0009] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0010] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0011] Figure 1 This is a schematic diagram of a power semiconductor module provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the internal structure of the power semiconductor module provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of a shell-free power semiconductor module provided in an embodiment of the present invention; Figure 4This is a schematic diagram of the substrate of the power semiconductor module provided in an embodiment of the present invention; Figure 5 yes Figure 4 Top view of the middle substrate; Figure 6 yes Figure 4 A cross-sectional view of the middle substrate along A11-A12; Figure 7 yes Figure 4 A schematic diagram of the chip on the substrate; Figure 8 This is a schematic diagram of the first common source terminal structure of the power semiconductor module provided in an embodiment of the present invention; Figure 9 yes Figure 8 A top view of the structure of the first common source terminal; Figure 10 yes Figure 8 A side view of the structure of the first common source terminal. Figure 11 yes Figure 8 A schematic diagram of the structure of the first common source terminal; Figure 12 This is a schematic diagram of another first common source terminal structure provided in an embodiment of the present invention; Figure 13 This is a schematic diagram of the driving circuit provided in an embodiment of the present invention; Figure 14 This is a schematic diagram of a thermistor element provided in an embodiment of the present invention; Figure 15 This is a schematic diagram of the second common-source terminal structure of the power semiconductor module provided in an embodiment of the present invention; Figure 16 yes Figure 15 A top view of the structure of the second common source terminal; Figure 17 yes Figure 15 A side view of the structure of the second common source terminal. Figure 18 yes Figure 15 A schematic diagram of the structure of the second common source terminal; Figure 19 This is a schematic diagram of another second common-source terminal structure provided in an embodiment of the present invention; Figure 20 This is a schematic diagram of another second common-source terminal structure provided in an embodiment of the present invention; Figure 21 This is a schematic diagram of the power terminal structure of the power semiconductor module provided in an embodiment of the present invention; Figure 22 yes Figure 21 Top view of the medium power terminal structure; Figure 23 yes Figure 21 Side view of the medium power terminal structure; Figure 24 yes Figure 21 Schematic diagram of medium power terminal structure; Figure 25 This is a schematic diagram of another power terminal structure provided in an embodiment of the present invention; Figure 26 This is a schematic diagram of another power terminal structure provided in an embodiment of the present invention; Figure 27 This is a schematic diagram of a power device provided in an embodiment of the present invention. Detailed Implementation

[0012] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0013] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0014] In related technologies, power semiconductor modules are mainly used to convert direct current (DC) to alternating current (AC), which is then supplied to loads such as industrial motors. External circuits electrically connected to the power semiconductor module include, but are not limited to, gate drivers, DC buses, inverters, and motors. The power semiconductor module internally houses multiple devices such as transistors and diodes. In this invention, the internal devices of the power semiconductor module include silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs). The power semiconductor module uses terminal elements to achieve electrical transmission between the module and its internal components.

[0015] The terminal elements of a power semiconductor module include power terminals, which primarily serve as transmission terminals for the module's main current path. Specifically, power terminals connect the internal devices of the module to the external circuitry, facilitating the transmission of high voltage / high current between them. Power terminals typically include an input terminal (DC+), an input terminal (DC-), and an output terminal (AC). The working principle of the power terminals is that when the gate of a device within the module, such as a SiC MOSFET, receives a turn-on voltage, the SiC MOSFET conducts, creating a low-resistance path between the power terminals, allowing current to flow within the module.

[0016] The terminal elements of a power semiconductor module include drive terminals. These drive terminals connect between the gate of the internal devices and the external gate driver. The drive terminals are primarily responsible for transmitting the gate control signal generated by the external gate driver to the gate of devices such as SiC MOSFETs, thereby controlling the SiC MOSFET's on / off state. Drive terminals typically include a positive gate drive voltage and a gate reference ground usually connected to the source. Sometimes, a Kelvin source drive terminal, i.e., an auxiliary source drive terminal, is added to achieve more precise gate voltage control. The working principle of the drive terminals is as follows: when the positive gate drive voltage is positive (e.g., +15~+20V), the SiC MOSFET is turned on; when the positive gate drive voltage is negative (e.g., -5V or -10V), the SiC MOSFET is turned off.

[0017] It should be noted that the terminal components in the power semiconductor module not only enable electrical connections between the module and the outside world, but also perform functions such as current transmission, thermal management, mechanical support, and insulation. The transistor device in this invention is the aforementioned chip.

[0018] Currently, the terminal components in existing power semiconductor modules generally use leaded terminals or pad terminals. Power semiconductor modules include silicon carbide power semiconductor modules. There are multiple chips connected in parallel in silicon carbide power semiconductor modules. If leaded terminals or pad terminals are used in silicon carbide power semiconductor modules with multiple chips connected in parallel, there may be many problems: (1) the problem of uneven current of parallel chips. If some chips turn on or turn off prematurely, it will lead to uneven current, which will also cause a series of serious problems; (2) the power terminals and drive terminals are led out from the substrate, which makes the space occupied large.

[0019] To address the problems in related technologies, embodiments of the present invention provide a power semiconductor module that integrates at least one power terminal and a drive terminal together. Details are as follows.

[0020] Figure 1 This is a schematic diagram of a power semiconductor module provided in an embodiment of the present invention. Figure 2This is a schematic diagram of the internal structure of the power semiconductor module provided in an embodiment of the present invention. Figure 3 This is a schematic diagram of a shell-less power semiconductor module provided in an embodiment of the present invention. Figure 4 This is a schematic diagram of the substrate of the power semiconductor module provided in an embodiment of the present invention. Figure 5 yes Figure 4 Top view of the middle substrate. Figure 6 yes Figure 4 A cross-sectional view of the middle substrate along A11-A12. Figure 7 yes Figure 4 A schematic diagram of the chip on the substrate. Figure 8 This is a schematic diagram of the first common-source terminal structure of the power semiconductor module provided in an embodiment of the present invention. Figure 9 yes Figure 8 A top view of the structure of the first common source terminal. Figure 10 yes Figure 8 A side view of the structure of the first common source terminal. (Combined with...) Figures 1 to 10 As shown, the power semiconductor module provided in this embodiment includes: a substrate 110, which includes a plurality of conductive portions 120 and at least one chipset 130. The chipset 130 includes a plurality of chips 131 connected in parallel. The plurality of conductive portions 120 include a first conductive portion 121 electrically connected to the source of the chip 131. Multiple terminal structures 150 include a support portion 151 and pins 152 and leads 153 connecting the support portion 151. A gap exists between the leads 153 and the substrate 110, and the leads 152 are electrically connected to the conductive portions 120. The multiple terminal structures 150 include a common-source terminal structure. In the common-source terminal structure, the leads 153 include auxiliary source drive leads, and the leads 152 are electrically connected to the first conductive portion 121. The common-source terminal structure also includes a power terminal 154 connected to the support portion 151. Figures 8 to 10 The terminal structure 150 is illustrated by an example including a first common-source terminal structure 150A. The first common-source terminal structure 150A includes an auxiliary source drive pin 153A and a power terminal 154. Pin 152 is electrically connected to the first conductive portion 121. The chip 131 can be a SiC MOSFET, but is not limited to this. The auxiliary source drive pin functions as a drive terminal.

[0021] The power semiconductor module includes a substrate 110, which is a semiconductor substrate located on the base plate 101 of the power semiconductor module. The substrate 110 includes multiple conductive portions 120 and multiple chip groups 130. Each chip group 130 includes multiple chips 131 connected in parallel. Each chip 131 includes a gate, a source, and a drain (not shown). The source of chip 131 includes a main source and an auxiliary source KS sharing a common source electrode, or the source of chip 131 includes a discrete main source and an auxiliary source KS. Optionally, the substrate 110 has a three-layer structure, including an intermediate dielectric layer 113 and a first metal layer 111 and a second metal layer 112 located on the upper and lower sides of the intermediate dielectric layer 113. The intermediate dielectric layer 113 can serve as insulation and heat conduction. The second metal layer 112 is connected to the base plate 101, and the first metal layer 111 is connected to the chip 131. The chip 131 includes a controllable semiconductor element. Furthermore, a thermally conductive material can be disposed between the second metal layer 112 and the base plate 101 to conduct heat to the substrate 110. The chip 131 can be fixed to the first metal layer 111 by an intermetallic compound or a metallurgical bonding layer. It should be noted that... Figure 6 The stacked structure of substrate 110 shown is merely an example, and the substrate structure of the power semiconductor module in this invention is not limited to... Figure 6 As shown, any substrate structure applicable to the present invention falls within the protection scope of the present invention.

[0022] Specifically, the substrate 110 can be a copper-clad ceramic substrate, and correspondingly, the intermediate dielectric layer 113 is a ceramic substrate with insulating properties. The first metal layer 111 is a copper conductive layer and forms a circuit topology for a power semiconductor module. The first metal layer 111 includes multiple conductive parts 120. The second metal layer 112 is a copper conductive layer and forms a circuit topology for a power semiconductor module. The intermediate dielectric layer 113 can be made of ceramic materials such as alumina, aluminum nitride, alumina doped with zirconium oxide, and silicon nitride, and is not limited to these. Either the first metal layer 111 or the second metal layer 112 can be formed on the intermediate dielectric layer 113 using active metal brazing (AMB) technology. AMB technology involves wetting and reacting AgCu solder containing active elements Ti and Zr at the interface between the ceramic and metal at high temperature, achieving heterogeneous bonding between the ceramic and the metal.

[0023] The substrate 110 includes multiple chip groups 130. In this embodiment, the substrate 110 includes eight chip groups 130 as an example. Each chip group 130 includes multiple chips 131 connected in parallel. The substrate 110 includes multiple conductive portions 120, each of which includes a first conductive portion 121. The first conductive portion 121 is electrically connected to the source of the chip 131. The source of each chip 131 in the same chip group 130 is electrically connected to the same first conductive portion 121. For example, chips 131A, 131B, 131C, and 131D belong to four different chip groups 130. The source of chip 131A is electrically connected to the first conductive portion 121A, the source of chip 131B is electrically connected to the first conductive portion 121B, the source of chip 131C is electrically connected to the first conductive portion 121C, and the source of chip 131D is electrically connected to the first conductive portion 121D. The source of chip 131 is electrically connected to the first conductive part 121. This includes the main source of chip 131 being electrically connected to the first conductive part 121 through one or more conductive lines, and the auxiliary source KS of chip 131 being electrically connected to the first conductive part 121 through one or more conductive lines. The conductive lines can be any kind of metal conductive lines such as aluminum wires. Optionally, the source electrode of chip 131 can be multiplexed as the main source and auxiliary source KS of chip 131.

[0024] In this embodiment, the power semiconductor module includes multiple terminal structures 150. Each terminal structure 150 is a three-dimensional structure. The main body of each terminal structure 150 includes a support portion 151 and terminals 152 and leads 153 extending from the support portion 151. Both the support portion 151 and the leads 153 have gaps with the substrate 110. One terminal 152 electrically contacts one conductive portion 120. M terminals 152 are electrically connected to M conductive portions 120, where M is greater than or equal to 1. Specifically, the substrate 110 only contacts the terminals 152 in the terminal structure 150. The support portion 151 in the terminal structure 150 does not contact the substrate 110 and has a gap. The leads 153, integrally connected to the support portion 151, do not contact the substrate 110 and have a gap. In other words, the leads 153 extending from the support portion 151 are suspended above the substrate 110. Clearly, the leads 153 in the terminal structure 150 do not occupy space on the substrate 110.

[0025] It should be noted that in this embodiment, the optional power semiconductor module also includes multiple external components 140; pins 153 are electrically connected to the external components 140. That is, pins 153 are indirectly electrically connected to external circuits. Specifically, pins 153 are electrically connected to external circuits through external components 140. Using external components 140 to achieve this connection facilitates alignment and reduces manufacturing complexity. Optional external components 140 can be vertical bolts, with the extension direction perpendicular to the plane of the substrate 110. Those skilled in the art can design external components 140 appropriately; the structure of external components 140 is not limited to vertical bolts.

[0026] In other embodiments, the pins can be directly electrically connected to external circuits. Specifically, the pins can be directly led out from the support and extended to the outside of the power semiconductor module, thereby realizing direct electrical connection of the pins to external circuits.

[0027] In the following embodiments, pin 153 is electrically connected to an external circuit via an external connector 140 as an example.

[0028] In this embodiment, the power semiconductor module includes multiple external components 140. There is a gap between the external components 140 and the substrate 110. Each external component 140 is electrically connected to one pin 153. N pins 153 are electrically connected to N external components 140, where N is greater than or equal to 1. Specifically, the external components 140 electrically connected to the pins 153 do not contact the substrate 110 and have a gap. That is, the external components 140 electrically connected to the pins 153 are suspended above the substrate 110, and obviously, the external components 140 electrically connected to the pins 153 do not occupy space on the substrate 110.

[0029] At least one terminal structure 150 in the power semiconductor module also includes a power terminal 154 extending from the support portion 151. The power semiconductor module includes a housing 160, and the external connector 140 and power terminal 154 all extend beyond the housing 160. The external connector 140 can be electrically connected to an external circuit to achieve signal transmission between the external circuit and the chip 131 inside the power semiconductor module. Similarly, the power terminal 154 can be electrically connected to an external circuit to achieve signal transmission between the external circuit and the chip 131 inside the power semiconductor module. Therefore, the terminal structure 150 and the external connector 140 in the power semiconductor module serve to realize the internal and external connections of the power semiconductor module, enabling external circuits outside the housing 160 to be electrically connected to the chip 131 inside the power semiconductor module. The external circuit electrically connected to pin 153 is defined as the first external circuit, and the external circuit electrically connected to power terminal 154 is defined as the second external circuit. The first external circuit mainly includes gate drivers, various detection circuits, etc. The second external circuit electrically connected to power terminal 154 can be a DC bus, inverter, motor, etc., and is mainly used to transmit high voltage and high current power energy.

[0030] The power semiconductor module includes multiple terminal structures 150, including at least one common-source terminal structure. The common-source terminal structure includes a power terminal 154, and its pin 153 includes an auxiliary source drive pin. The pin 152 of the common-source terminal structure is electrically connected to the first conductive portion 121. In other words, the common-source terminal structure, which integrates the auxiliary source drive pin and the power terminal 154, has its pin 152 directly electrically contacting the first conductive portion 121, eliminating the need for a metal wire to connect the auxiliary source drive pin and the conductive portion.

[0031] Figures 8 to 10 The terminal structure 150 is illustrated by an example including a first common-source terminal structure 150A. The first common-source terminal structure 150A integrates an auxiliary source drive pin 153A and a power terminal 154. The first common-source terminal structure 150A can connect the chip 131 and external circuitry. The external circuitry electrically connected to the power semiconductor module includes at least a gate driver and a DC circuit. For example, taking chip 131A as an example, the source of chip 131A is electrically connected to a first conductive portion 121A, and the first conductive portion 121A is electrically connected to pin 152 of the first common-source terminal structure 150A. On the one hand, the first common source terminal structure 150A integrates pin 152 and auxiliary source drive pin 153A together. The auxiliary source drive pin 153A is electrically connected to the gate driver, thereby realizing that the source of chip 131A is electrically connected to the gate driver through the auxiliary source drive pin 153A. On the other hand, the first common source terminal structure 150A integrates pin 152 and power terminal 154 together. The power terminal 154 can be directly electrically connected to external circuits such as DC bus, thereby realizing that the source of chip 131A is electrically connected to DC bus through the power terminal 154.

[0032] As described above, the substrate 110 only contacts the terminal pin 152 in the terminal structure 150, while the pin 153 in the terminal structure 150 does not contact the substrate 110 and there is a gap between them. Based on this, for the common-source terminal structure, the auxiliary source drive pin 153A is suspended above the substrate 110 and does not contact it. In other words, the auxiliary source drive pin 153A of the common-source terminal structure and its connected external component 140 do not occupy space on the substrate 110. Compared with the conventional approach of separately setting the auxiliary source drive terminal on the substrate, this embodiment eliminates the need to separately lead out the auxiliary source drive terminal on the substrate 110, freeing up more space on the substrate 110. This allows for the placement of more chips 131 on the substrate 110, improving the integration of the power semiconductor module.

[0033] Furthermore, in the common-source terminal structure, the auxiliary source drive pin 153A and the power terminal 154 are integrated together. The auxiliary source drive pin 153A is electrically connected to the gate driver. In this embodiment, the lead-out method of the auxiliary source drive pin 153A does not use a metal wire, thus reducing the drive circuit and improving the problem that it is difficult for chips in the same group to be turned on and off simultaneously. For example, the auxiliary source KS of chip 131A is electrically connected to the first conductive part 121A through a conductive wire. The first conductive part 121A directly contacts the first common-source terminal structure 150A. The first common-source terminal structure 150A integrates the auxiliary source drive pin 153A. Then, the auxiliary source KS of chip 131A sequentially outputs the source signal to the gate driver through the first conductive part 121A, the first common-source terminal structure 150A, and the external component 140. That is to say, there is no need to use a conductive wire to connect the first conductive part 121A to the auxiliary source drive pin 153A. In conventional technology, an auxiliary source drive terminal is separately set on the substrate. The auxiliary source of the chip is electrically connected to the source conductive part via a metal wire, and the source conductive part is electrically connected to the auxiliary source drive terminal via a metal wire. That is to say, the connection between the source conductive part and the auxiliary source drive terminal is made by a metal wire, and the transmission of signals through the metal wire inevitably involves inductance. Therefore, compared with conventional technology, in this embodiment, there is no need to use a metal wire lead-out method between the conductive part 120 and the auxiliary source drive pin 153A. This can minimize the inductance of the drive circuit, reduce the number of leads in the drive circuit, shorten the drive circuit of the auxiliary source KS of chip 131, and facilitate the simultaneous switching on and off of parallel chips 131. This avoids the problem of uneven current flow caused by some chips in the parallel circuit turning on or off prematurely, suppresses oscillation, improves switching speed, ensures efficient and stable operation of the power semiconductor module, and reduces external circuit interference and packaging difficulty.

[0034] refer to Figures 4 to 7 As shown, the optional substrate 110 includes at least two bridge arm units 114; the bridge arm unit 114 includes a plurality of chip groups 130 arranged along a first direction Y1, the chip group 130 includes a plurality of chips 131 arranged along a second direction X1, the first direction Y1 and the second direction X1 intersect, the bridge arm unit 114 also includes a plurality of conductive portions 120 arranged along the first direction Y1, the plurality of conductive portions 120 includes a first conductive portion 121, a second conductive portion 122 and a third conductive portion 123, the source of the chip 131 is electrically connected to the first conductive portion 121, the drain of the chip 131 is electrically connected to the second conductive portion 122, and the gate of the chip 131 is electrically connected to the third conductive portion 123. Optional power semiconductor modules are electrically connected to the gate driver and gate detection circuit; the bridge arm unit 114 includes two third conductive portions 123 and two chipsets 130, one third conductive portion 123 is electrically connected to the positive terminal (G1+) of the gate driver 210, and the other third conductive portion 123 is electrically connected to the positive terminal (G2+) of the gate detection circuit. It is understood that... Figure 5 The layout and structure of the bridge arm unit 114 shown is only an example. In actual cases, the number of rows of chips 131 and the number of chips 131 in a row of the bridge arm unit 114 can be adjusted adaptively, and the number and layout of the bridge arm units 114 on the substrate 110 can also be adjusted adaptively.

[0035] For example, a bridge arm unit 114 includes two chipsets 130. In a bridge arm unit 114A, the two chipsets 130 operate in a time-sharing manner. When the chipset 130 containing chip 131C is operating, the chipset 130 containing chip 131D is not operating, or vice versa. Since the two chipsets 130 in the bridge arm unit 114 operate in a time-sharing manner, the source conductive portion corresponding to one chipset 130 in the optional bridge arm unit 114 can be reused as the drain conductive portion corresponding to the other chipset 130. This facilitates the placement of more chips on the substrate 110 and increases the chip density. For example, the source of chip 131C is electrically connected to the first conductive part 121C, the drain of chip 131C is electrically connected to the second conductive part 122, the gate of chip 131C is electrically connected to the third conductive part 123 / 1, the source of chip 131D is electrically connected to the first conductive part 121D, and the gate of chip 131D is electrically connected to the third conductive part 123 / 2. The first conductive part 121C serves as the source conductive part of chip 131C. When chip 131C is not working, the first conductive part 121C can be reused as the drain conductive part of chip 131D, that is, the drain of chip 131D is electrically connected to the conductive part 121C. In the bridge arm unit 114, the third conductive part 123 / 2 (via external component 140 / G1+) is electrically connected to the positive terminal (G1+) of the gate driver 210, which enables control of the gate voltage of the chip 131, thereby controlling the switching state of the chip 131; another third conductive part 123 / 1 (via external component 140 / G2+) is electrically connected to the positive terminal (G2+) of the gate detection circuit, which enables detection of the gate voltage of the chip 131, and thus, with the cooperation of the gate driver 210, real-time monitoring and adjustment of the gate voltage of the chip 131 can be achieved.

[0036] In this invention, the power semiconductor module includes at least one common-source terminal structure. The common-source terminal structure includes a support portion and a pin connected to the support portion. The pin of the common-source terminal structure is electrically connected to the source of the chip through a first conductive portion. The common-source terminal structure also includes pins connected to the support portion and power terminals connected to the support portion. The pins in the common-source terminal structure include auxiliary source drive pins. That is, both the auxiliary source drive pins and the power terminals in the common-source terminal structure are connected to the support portion. This achieves the integration of the auxiliary source drive pins and the power terminals on the same support portion in the common-source terminal structure. The power terminals and auxiliary source drive pins integrated in the common-source terminal structure are electrically connected to corresponding external circuits. The auxiliary source drive pins are suspended relative to the substrate. Therefore, the auxiliary source drive pins do not occupy the surface space of the substrate. There is no need to set the auxiliary source drive terminals separately on the substrate, which can free up more installation space on the substrate. This is beneficial for installing more chips on the substrate, improving the integration and chip density of the power semiconductor module, reducing module manufacturing costs, improving compatibility, and reducing packaging costs and processing difficulty. On the other hand, in the common source terminal structure, the power terminal and the auxiliary source drive pin are integrated together, so that the first conductive part directly contacts the common source terminal structure. There is no need to use metal wires to lead out between the conductive part and the auxiliary source drive pin. Therefore, the drive circuit of the auxiliary source of the chip can be reduced, the inductance of the drive circuit can be minimized, which is conducive to the simultaneous switching on and off of parallel chips, improving the current carrying capacity, avoiding the problem of uneven current flow, and improving the mechanical and electrical reliability of the power semiconductor module.

[0037] Figure 11 yes Figure 8 A schematic diagram of the first common source terminal structure. Figure 12 This is a schematic diagram of another first common-source terminal structure provided in an embodiment of the present invention. Figure 13 This is a schematic diagram of the driving circuit provided in an embodiment of the present invention, for reference. Figures 8 to 13As shown, the optional power semiconductor module is electrically connected to the gate driver 210 and the DC circuit; the common source terminal structure includes a first common source terminal structure 150A; in the first common source terminal structure 150A, the auxiliary source drive pin 153A is electrically connected to the negative terminal (G1-) of the gate driver 210, and the power terminal 154 is electrically connected to the negative terminal (DC-) of the DC circuit. In this embodiment, the optional auxiliary source drive pin 153A is electrically connected to the negative terminal (G1-) of the gate driver 210 through the external connector 140 / G1-. It should be noted that the positive terminal of the gate driver 210 is marked as G1+, and the negative terminal of the gate driver 210 is marked as G1-. In this "G1", the "1" has no actual meaning and is only used to distinguish it from the positive and negative terminals of the subsequent gate detection circuit. Optional G represents the conductive part electrically connected to the gate of chip 131, S represents the output terminal of the power semiconductor module, and D represents the input terminal of the power semiconductor module. The output terminal of the power semiconductor module is mainly an AC output terminal, and the input terminal of the power semiconductor module is mainly a DC input terminal. Figure 11 compared to, Figure 12 Several through holes 156 have been added to the support portion 151 of the first common source terminal structure 150A to facilitate heat dissipation. The external circuitry electrically connected to this power semiconductor module includes at least a DC circuit (such as a DC bus) and a gate driver.

[0038] In this embodiment, the first common-source terminal structure 150A can serve as a DC input terminal, i.e., the input terminal of the power semiconductor module. Based on this, the power terminal 154 of the first common-source terminal structure 150A is electrically connected to the negative terminal (DC-) of an external DC circuit, and the pin 152 of the first common-source terminal structure 150A is sequentially connected to the source terminal of the chip 131 in the power semiconductor module via the first conductive portion 121 and the conductive line 155, thereby realizing the input of the DC signal provided by the DC circuit to the chip 131. The DC signal is a DC voltage signal.

[0039] An auxiliary source drive pin 153A is led out from one side of the support portion 151 of the first common source terminal structure 150A. The auxiliary source drive pin 153A is electrically connected to the negative terminal (G1-) of the gate driver 210 through the external connector 140 / G1-. The positive terminal (G1+) of the gate driver 210 is electrically connected to the gate of the chip 131 in the power semiconductor module through the external connector 140 / G1+. Thus, the auxiliary source drive pin 153A serves as a reference ground for the positive terminal (G1+) of the gate driver 210. The gate driver 210 is used to provide a gate voltage signal to the gate of the chip 131 to control the chip 131 to turn on or off.

[0040] Figure 14This is a schematic diagram of a thermistor element provided in an embodiment of the present invention. In the optional first common-source terminal structure 150A, pin 153 further includes a resistance detection pin 153R; the substrate 110 also includes a thermistor element 170, the first end of the thermistor element 170 is electrically connected to the first connector 150R, and the second end of the thermistor element 170 is electrically connected to the first common-source terminal structure 150A through the first conductive part 121R. Specifically, the first connector 150R can be electrically connected to the external component 140 / R1, and the resistance detection pin 153R can be electrically connected to the external component 140 / R2. In the optional first common-source terminal structure 150A, the auxiliary source drive pin 153A and the resistance detection pin 153R are located on opposite sides of the support part 151. The external circuit electrically connected to this power semiconductor module includes at least a resistance detection circuit.

[0041] In this embodiment, the substrate 110 further includes a thermistor element 170. Specifically, a resistance detection pin 153R is led out from one side of the first common-source terminal structure 150A to serve as a signal terminal of the thermistor element 170, and the first connector 150R serves as another signal terminal of the thermistor element 170. The first signal terminal of the resistance detection circuit is electrically connected to the first connector 150R through the external connector 140 / R1, and the second signal terminal of the resistance detection circuit is electrically connected to the resistance detection pin 153R through the external connector 140 / R2. Thus, the resistance detection circuit, the first common-source terminal structure 150A, the first conductive part 121R, and the thermistor element 170 form a complete resistance detection circuit. The resistance detection circuit can accurately obtain the resistance change of the thermistor element 170 through two external components 140 / R1 and 140 / R2, so as to realize the temperature measurement of the first conductive part 121R that is electrically contacted by the thermistor element 170, and thus realize the temperature measurement in the power semiconductor module. The internal temperature of the power semiconductor module can also be regarded as the operating temperature of the power semiconductor module when it is working, thereby obtaining the real-time temperature information of the power semiconductor module and ensuring the accuracy and reliability of temperature management of the power semiconductor module.

[0042] The thermistor element 170 can be an NTC (Negative Temperature Coefficient) thermistor. An NTC thermistor's resistance decreases as temperature increases. Therefore, an NTC thermistor is used as a temperature sensor in the power semiconductor module. As the temperature inside the power semiconductor module changes, the resistance value of the NTC thermistor changes, and the internal temperature of the power semiconductor module can be determined by measuring the change in resistance. In other embodiments, the thermistor element can also be a PTC thermistor or others, and is not limited to these. Specifically, as the internal temperature of the power semiconductor module increases, the temperature of the first conductive part 121R increases accordingly. The resistance of the NTC thermistor 170, which is in electrical contact with the first conductive part 121R, decreases. The resistance detection circuit detects this decrease in resistance to determine that the operating temperature of the power semiconductor module has increased. The resistance detection circuit can also determine the operating temperature value of the power semiconductor module based on the resistance value of the NTC thermistor 170 and its change in resistance. Conversely, when the internal temperature of the power semiconductor module decreases, the temperature of the corresponding first conductive part 121R decreases. Consequently, the resistance of the NTC thermistor 170, which is in electrical contact with the first conductive part 121R, increases. The resistance detection circuit detects the increase in the resistance of the NTC thermistor 170 to determine that the operating temperature of the power semiconductor module has decreased. The resistance detection circuit can also determine the operating temperature value of the power semiconductor module based on the resistance of the NTC thermistor 170 and the amount of its resistance change.

[0043] The resistance detection circuit can also provide over-temperature protection for the power semiconductor module based on the resistance value of the thermistor element 170 and its resistance changes. For example, the resistance detection circuit feeds back the measured internal temperature of the power semiconductor module to the upper-level control system. If the upper-level control system determines that the internal temperature of the power semiconductor module is too high, it can take protective measures, such as reducing the magnitude of the DC signal provided by the DC circuit or shutting down the power semiconductor module, to prevent overheating and damage to the chip.

[0044] In this embodiment, the first common-source terminal structure 150A adopts an integrated design structure of power terminal and drive terminal, and the pin 152 of the first common-source terminal structure 150A is electrically connected to the source of the chip 131. On one hand, the first common-source terminal structure 150A serves as the DC input power terminal of the power semiconductor module. Specifically, the power terminal 154 of the first common-source terminal structure 150A is electrically connected to the negative terminal (DC-) of the DC circuit. On the other hand, the first common-source terminal structure 150A also serves as the auxiliary source drive terminal of the power semiconductor module. Specifically, the auxiliary source drive pin 153A of the first common-source terminal structure 150A is electrically connected to the negative terminal (G1-) of the gate driver 210. On the third hand, the first common-source terminal structure 150A also serves as the resistance detection terminal of the power semiconductor module. Specifically, the resistance detection pin 153R of the first common-source terminal structure 150A is electrically connected to a signal terminal of the resistance detection circuit. The first common source terminal structure 150A directly integrates the auxiliary source drive terminal and the power terminal together, which can solve the current balancing problem of multiple chips, avoid the problem of some chips in parallel turning on or turning off prematurely, prevent the problem of uneven current of parallel chips, and the simple structure also adopts three-dimensional support parts, through holes, etc. to increase the heat dissipation area and improve the current carrying capacity.

[0045] Figure 15 This is a schematic diagram of the second common-source terminal structure of the power semiconductor module provided in an embodiment of the present invention. Figure 16 yes Figure 15 A top view of the structure of the second common source terminal. Figure 17 yes Figure 15 Side view of the second common source terminal structure. Figure 18 yes Figure 15 A schematic diagram of the second common source terminal structure. Figure 19 This is a schematic diagram of another second common-source terminal structure provided in an embodiment of the present invention. Figure 20 This is a schematic diagram of another second common-source terminal structure provided in an embodiment of the present invention, referred to... Figures 15 to 20 As shown, the optional power semiconductor module is electrically connected to the gate detection circuit and the AC circuit; the common-source terminal structure includes a second common-source terminal structure 150B; in the second common-source terminal structure 150B, the auxiliary source drive pin 153B is electrically connected to the negative terminal (G2-) of the gate detection circuit, and the power terminal 154 is electrically connected to the AC circuit. Specifically, the auxiliary source drive pin 153B can be electrically connected to the negative terminal (G2-) of the gate detection circuit through the external connector 140 / G2-. In the optional second common-source terminal structure 150B, pin 153 also includes an output detection pin 153S. Figure 18 and Figure 19The number of through holes 156 on the support portion 151 of the second common source terminal structure 150B varies. The number of through holes 156 on the support portion 151 of the second common source terminal structure 150B can be rationally designed according to different heat dissipation requirements; in other embodiments, such as... Figure 20 The support portion 151 of the second common-source terminal structure 150B may not have a through hole. The external circuitry electrically connected to this power semiconductor module includes at least a gate detection circuit, an output detection circuit, and an AC circuit.

[0046] In this embodiment, the second common-source terminal structure 150B can serve as an AC output terminal, i.e., the output terminal of the power semiconductor module. Based on this, the power terminals 154 of the second common-source terminal structure 150B are electrically connected to an external AC circuit, such as a three-phase AC motor. The three power terminals 154 of the second common-source terminal structure 150B can be connected to the U-phase, V-phase, and W-phase of the three-phase AC motor, respectively. The pins 152 of the second common-source terminal structure 150B are electrically connected to the first conductive part 121. The first conductive part 121 is electrically connected to the source of the chip 131 in the power semiconductor module via conductive lines, thereby enabling the power semiconductor module to output an AC signal to the AC circuit. The AC signal is an AC current signal. Here, AC can represent the AC circuit or the output AC signal.

[0047] It should be noted that, in the case where the bridge arm unit includes two chipsets, these two chipsets do not operate simultaneously. Therefore, the conductive portion electrically connected to pin 152 of the second common source terminal structure 150B can serve as the first conductive portion 121 of a chip in one chipset, and also as the drain conductive portion of a chip in the other chipset. For example, refer to... Figure 6 As shown, the bridge arm unit includes two chipsets, one of which includes chip 131A and the other includes chip 131B. Chips 131A and 131B operate in a time-sharing manner. When chip 131B is operating, chip 131A is not operating. At this time, conductive part 121B serves as the source conductive part of chip 131B, i.e., the first conductive part 121. When chip 131A is operating, chip 131B is not operating. At this time, conductive part 121B serves as the drain conductive part of chip 131A. In the same bridge arm unit, one conductive part can be reused as the source conductive part and drain conductive part of two chipsets, which is beneficial for setting more chips on the substrate 110.

[0048] An auxiliary source drive pin 153B is led out from one side of the support portion 151 of the second common-source terminal structure 150B. The auxiliary source drive pin 153B is electrically connected to the negative terminal (G2-) of the gate detection circuit through the external connector 140 / G2-. The positive terminal (G2+) of the gate detection circuit is electrically connected to the gate of the chip 131 in the power semiconductor module through the external connector 140 / G2+. Thus, the auxiliary source drive pin 153B serves as the reference ground for the positive terminal (G2+) of the gate detection circuit. The gate detection circuit is used to acquire the voltage signal of the gate of the chip 131 to detect the gate voltage of the chip 131, and works with the gate driver 210 to control the gate voltage of the chip 131.

[0049] An output detection pin 153S is led out from the other side of the support portion 151 of the second common-source terminal structure 150B. The output detection pin 153S serves as a source signal terminal. It can be electrically connected to the output detection circuit via external connector 140 / SO. Therefore, the electrical signal output from the output detection pin 153S can be considered both the source signal of chip 131 in the power semiconductor module and the AC signal received by the AC circuit. The output detection circuit is used to acquire the source signal of chip 131 through the output detection pin 153S, enabling monitoring of potential changes or source current of the chip 131's source signal. It can also be used to acquire the AC signal received by the AC circuit, enabling detection of the AC signal output by the power semiconductor module. (Reference) Figure 13 As shown, when the power semiconductor module is operating, its input terminal D can be electrically connected to a DC circuit and its output terminal S can be electrically connected to an AC circuit. In this case, an AC current will flow between the input terminal D and the output terminal S. The output detection pin 153S allows for the monitoring and adjustment of the AC signal at the output terminal S of the power semiconductor module. The output detection circuit can detect the AC signal transmitted by the second common-source terminal structure 150B in real time through the output detection pin 153S, thereby determining the current flow at the output terminal S of the power semiconductor module. This ensures that the upper-level control system can optimize and adjust the AC signal output by the power semiconductor module according to the actual workload.

[0050] The output detection pin 153S is not located on the DC input side of the power semiconductor module. This is because if the output detection pin 153S were integrated on the DC input side, the DC voltage signal received on the DC input side would be fixed. When the DC voltage deviates, it may affect the chip source signal transmitted by the output detection pin 153S, causing distortion of the chip source signal output by the power semiconductor module, and failing to effectively reflect the operating status of the power semiconductor module and the AC circuit. In this embodiment, the output detection pin 153S is integrated on the second common-source terminal structure 150B, i.e., the AC output terminal. That is, the output detection pin 153S is connected to the AC output side of the power semiconductor module. This ensures that the signal transmitted by the output detection pin 153S accurately reflects changes in the AC signal output by the power semiconductor module, avoiding the influence of the DC voltage signal on the chip source signal. This allows the upper-level control system to more accurately monitor the state of the AC circuit, further optimizing the switching control of the power semiconductor module, thereby improving the power conversion efficiency of the power semiconductor module, optimizing dynamic response, and avoiding overload protection.

[0051] In this embodiment, the second common-source terminal structure 150B adopts an integrated design of power terminal and drive terminal, and the pin 152 of the second common-source terminal structure 150B is electrically connected to the source of the chip 131. On one hand, the second common-source terminal structure 150B serves as the AC output power terminal of the power semiconductor module; specifically, the power terminal 154 of the second common-source terminal structure 150B is electrically connected to the AC circuit. On the other hand, the second common-source terminal structure 150B also serves as the auxiliary source drive terminal of the power semiconductor module; specifically, the auxiliary source drive pin 153B of the second common-source terminal structure 150B is electrically connected to the negative terminal (G2-) of the gate detection circuit. On the third hand, the second common-source terminal structure 150B also serves as the output detection terminal of the power semiconductor module; specifically, the output detection pin 153S of the second common-source terminal structure 150B is electrically connected to the output detection circuit. The second common source terminal structure 150B directly integrates the auxiliary source drive terminal and the power terminal together, which can solve the current balancing problem of multiple chips, avoid the problem of some chips in parallel turning on or off prematurely, prevent the problem of uneven current of parallel chips, and has a simple structure. It also adopts three-dimensional support parts and through holes to increase the heat dissipation area and improve the current carrying capacity.

[0052] Figure 21 This is a schematic diagram of the power terminal structure of the power semiconductor module provided in an embodiment of the present invention. Figure 22 yes Figure 21 Top view of the medium power terminal structure. Figure 23 yes Figure 21 Side view of the medium power terminal structure. Figure 24 yes Figure 21 A schematic diagram of the medium power terminal structure. Figure 25 This is a schematic diagram of another power terminal structure provided in an embodiment of the present invention. Figure 26 This is a schematic diagram of another power terminal structure provided in an embodiment of the present invention, for reference. Figures 21 to 26 As shown, the optional power semiconductor module is electrically connected to a DC circuit; multiple conductive portions 120 include a second conductive portion 122 electrically connected to the drain of the chip 131; multiple terminal structures 150 also include a power terminal structure 150D; in the power terminal structure 150D, pin 153 includes a drain pin 153D, and terminal 152 is electrically connected to the second conductive portion 122; the power terminal structure 150D also includes a power terminal 154 connected to the support portion 151 and electrically connected to the positive terminal (DC+) of the DC circuit. The external circuit electrically connected to this power semiconductor module includes at least a DC circuit, a drain detection circuit, or a load.

[0053] In this embodiment, the power terminal structure 150D can serve as a DC input terminal, i.e., the input terminal of the power semiconductor module. Based on this, the power terminal 154 of the power terminal structure 150D is electrically connected to the positive terminal (DC+) of an external DC circuit. The pin 152 of the power terminal structure 150D is sequentially connected to the drain of the chip 131 in the power semiconductor module via the second conductive part 122 and the conductive line 155. A drain pin 153D is integrated on one side of the support part 151 of the power terminal structure 150D. The drain pin 153D can be electrically connected to a drain detection circuit or a load via an external connector 140 / DO. Figure 8 and Figure 26 As shown, the positive terminal (DC+) of the DC circuit is electrically connected to the power terminal 154 of the power terminal structure 150D, and the negative terminal (DC-) of the DC circuit is electrically connected to the power terminal 154 of the first common source terminal structure 150A, thereby realizing the DC signal input of the DC circuit to the power semiconductor module chip 131. The conductive part 120 to which the drain of chip 131 is electrically connected is the second conductive part 122, also called the drain conductive part. It should be noted that, depending on the product requirements, the drain conductive part of one chip 131 can be reused as the source conductive part of other chips.

[0054] Electrical information related to the switching state of the power semiconductor module can be obtained through the drain pin 153D, ensuring the normal operation and status monitoring of the power semiconductor module. The function of the drain pin 153D is mainly reflected in two aspects.

[0055] Firstly, the drain pin 153D can realize the voltage monitoring function. Specifically, the drain pin 153D is electrically connected to the drain detection circuit. The drain detection circuit can obtain the drain voltage of chip 131 through the drain pin 153D. The drain voltage of chip 131 is a key parameter for judging the switching state and working state of chip 131. Based on the change of the drain voltage of chip 131, the drain detection circuit can determine whether chip 131 is turned on or off, and then adjust the control strategy or perform protection.

[0056] Secondly, the drain pin 153D can realize the load monitoring function. Specifically, the drain pin 153D is electrically connected to the load, and the voltage signal at the load end can be obtained through the drain pin 153D. According to the change of the voltage signal at the load end, the voltage of the load can be monitored in real time.

[0057] refer to Figures 21 to 24 As shown, the edge of the power terminal structure 150D can be designed as a semi-circular arc.

[0058] refer to Figure 25 and Figure 26 As shown, the edges of the power terminal structure 150D can be designed as sharp corners.

[0059] Figures 24 to 26 In this design, the number of through holes 156 can be rationally designed on the support portion 151 of the power terminal structure 150D according to different heat dissipation requirements, or through holes can be omitted; for example Figure 24 The support portion 151 of the medium-power terminal structure 150D does not have through holes, such as... Figure 26 A through hole 156 is provided on the support part 151 of the medium power terminal structure 150D.

[0060] like Figures 21 to 24 As shown, the edges of the power terminal structure 150D can be designed as semi-circular arcs, which can reduce electric field concentration. Specifically, sharp edges in circuit structures can easily lead to excessively high local electric field strength (up to 5MV / cm or more), causing the risk of breakdown or partial discharge; while the arc-shaped edges in the power terminal structure 150D can distribute the electric field evenly, reduce the peak electric field strength, and improve the reliability of high-voltage insulation and device life. In addition, the arc-shaped edge design in the power terminal structure 150D can improve the distribution of mechanical stress, reduce stress concentration points, enhance fatigue resistance and shock resistance, facilitate manufacturing and connection, and reduce the risk of assembly damage; furthermore, the semi-circular arc structure of the power terminal structure 150D can effectively suppress EMI electromagnetic interference, improve the overall module stability, and is suitable for high power density applications.

[0061] Continue to refer to Figures 4 to 26As shown, an optional power semiconductor module is electrically connected to a gate driver; multiple conductive portions 120 include a third conductive portion 123 electrically connected to the gate of chip 131; multiple terminal structures 150 further include a first driving terminal structure 150E; in the first driving terminal structure 150E, pin 153 includes a driving pin 153E, which is electrically connected to the positive terminal (G1+) of the gate driver 210, and terminal 152 is electrically connected to the third conductive portion 123. An optional power semiconductor module is electrically connected to a gate detection circuit; multiple conductive portions 120 include a third conductive portion 123 electrically connected to the gate of chip 131; multiple terminal structures 150 further include a second driving terminal structure 150F; in the second driving terminal structure 150F, pin 153 includes a driving pin 153F, which is electrically connected to the positive terminal (G2+) of the gate detection circuit, and terminal 152 is electrically connected to the third conductive portion 123. Specifically, in the first drive terminal structure 150E, drive pin 153E can be electrically connected to the positive terminal (G1+) of gate driver 210 via external component 140 / G1+; in the second drive terminal structure 150F, drive pin 153F can be electrically connected to the positive terminal (G2+) of gate detection circuit via external component 140 / G2+. The external circuits electrically connected to this power semiconductor module include at least a gate driver and a gate detection circuit.

[0062] In this embodiment, bridge arm unit 114A is used as an example. Bridge arm unit 114A includes a third conductive portion 123 / 1 and a third conductive portion 123 / 2. In other embodiments, bridge arm unit 114 may only include the third conductive portion 123 / 2. For example, in bridge arm unit 114A, the third conductive portion 123 / 1 is electrically connected to the positive terminal (G2+) of the gate detection circuit via the second drive terminal structure 150F and the external connector 140 / G2+. (Refer to...) Figure 15 As shown, in the second common-source terminal structure 150B, the auxiliary source drive pin 153B is electrically connected to the negative terminal (G2-) of the gate detection circuit via the external connector 140 / G2-. Therefore, the gate detection circuit can acquire and detect the gate voltage of the chip 131. For the bridge arm unit 114A, the third conductive portion 123 / 2 is electrically connected to the positive terminal (G1+) of the gate driver 210 via the first drive terminal structure 150E and the external connector 140 / G1+. (Refer to...) Figure 8 As shown, in the first common source terminal structure 150A, the auxiliary source drive pin 153A is electrically connected to the negative terminal (G1-) of the gate driver 210 through the external component 140 / G1-. Then the gate driver 210 can obtain the gate voltage of the chip 131 and control the gate voltage of the chip 131, thereby controlling the switching state of the chip 131.

[0063] As described above, both the first driving terminal structure 150E and the second driving terminal structure 150F are gate signal driving terminals, and their main function is to achieve more stable and reliable gate driving and gate control.

[0064] Specifically, the first drive terminal structure 150E, connected to the input side of the power semiconductor module, receives a gate control signal from the gate driver 210. This gate control signal is applied to the gate of the chip 131 to control the chip 131 to turn on or off. The gate control signal can be a pulse voltage signal. Since the gate current of the chip 131 is relatively small, the accuracy of the voltage and frequency of the gate control signal controlling the switching state of the chip 131 is crucial to the switching speed of the chip 131. The gate driver 210 can precisely control the voltage amplitude and frequency of the output gate control signal, which is beneficial for accurately controlling the switching state of the chip 131. The second drive terminal structure 150F, connected to the output side of the power semiconductor module, feeds back the gate voltage signal of the chip 131 to the gate detection circuit. This ensures that the gate detection circuit monitors the changes in the gate voltage of the chip 131 in real time, thereby ensuring the stability of the gate voltage of the chip 131 and preventing overshoot or instability caused by switching operations or other circuit influences.

[0065] In this embodiment, the combined action of the gate control signal transmitted through the first driving terminal structure 150E and the gate voltage signal transmitted through the second driving terminal structure 150F ensures precise control of the gate control signal voltage, thereby enabling efficient switching operation of the chip 131. Based on this, the gate driver 210 can effectively control the turn-on and turn-off of the chip 131, avoiding the effects of overvoltage or overcurrent and ensuring the stability and reliability of the power semiconductor module.

[0066] The power semiconductor module proposed in this invention includes a common-source terminal structure, which comprises an integrated power terminal and an auxiliary source drive pin. By adopting an integrated design of the power terminal and the auxiliary source drive pin, the current balancing problem of existing multi-chip parallel modules can be solved, while improving the module power density, minimizing the drive loop inductance, suppressing oscillation, improving switching speed, and reducing independent auxiliary source terminals, thereby improving mechanical and electrical reliability. The common-source terminal structure design offers the following advantages: 1. Reduced parasitic inductance of the gate drive circuit: The shorter path of the gate drive circuit results in lower inductance, which helps suppress oscillations and improve switching speed. 2. Enhanced drive synchronization: More precise simultaneous switching on and off can be achieved when multiple chips are connected in parallel, improving dynamic current sharing performance. 3. Compact layout: Floating auxiliary source drive pins increase the usable area of ​​the substrate, making it suitable for high power density applications. 4. Reduced external leads: Improved mechanical and electrical reliability. 5. Better electromagnetic induction EMI control: The more symmetrical circuits of the drive terminals and power terminals help suppress common-mode noise. 6. Increased via design: Retains current carrying capacity, eliminates skin effect, and facilitates potting and venting.

[0067] Based on the same inventive concept, embodiments of the present invention provide a power device. Figure 27 This is a schematic diagram of a power device provided in an embodiment of the present invention, such as... Figure 27 The power device 300 shown includes a power semiconductor module 310. Optionally, the power device 300 may also include a gate driver 320, a DC circuit 330, and an AC circuit 340, but the structure of the power device 300 is not limited thereto. In this embodiment, the power device 300 includes the power semiconductor module 310, gate driver 320, DC circuit 330, and AC circuit 340 described in any embodiment of the present invention.

[0068] Gate driver 320 (i.e., gate driver 210 in the above embodiment) is electrically connected to power semiconductor module 310. Gate driver 320 provides a gate voltage signal to the gate of the chip in power semiconductor module 310 to control the chip in power semiconductor module 310 to turn on or off. DC circuit 330 is electrically connected to power semiconductor module 310 and provides a DC signal to the chip in power semiconductor module 310. AC circuit 340 is electrically connected to power semiconductor module 310 and outputs an AC signal to AC circuit 340.

[0069] The power device 300 provided in this embodiment of the invention includes the power semiconductor module 310 provided in any embodiment of the invention, and has the corresponding functional modules and beneficial effects of the power semiconductor module 310. The power device 300 provided in this embodiment of the invention also includes external circuits provided in any embodiment of the invention, etc., which will not be described in detail.

[0070] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0071] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A power semiconductor module, characterized in that, include: A substrate, the substrate including a plurality of conductive portions and at least one chipset, the chipset including a plurality of chips connected in parallel, the plurality of conductive portions including a first conductive portion electrically connected to the source of the chips; Multiple terminal structures, each terminal structure including a support portion and pins and terminals connected to the support portion, wherein the pins have a gap with the substrate and the terminals are electrically connected to the conductive portion; The plurality of terminal structures include a common source terminal structure; in the common source terminal structure, the pins include auxiliary source drive pins, the terminals are electrically connected to the first conductive part, and the common source terminal structure also includes a power terminal connected to the support part.

2. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module also includes: multiple external components; The pin is electrically connected to the external component.

3. The power semiconductor module according to claim 2, characterized in that, The external component is a vertical bolt, and the extension direction of the vertical bolt is perpendicular to the plane of the substrate.

4. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module is electrically connected to the gate driver and the DC circuit. The common source terminal structure includes a first common source terminal structure; in the first common source terminal structure, the auxiliary source drive pin is electrically connected to the negative terminal of the gate driver, and the power terminal is electrically connected to the negative terminal of the DC circuit.

5. The power semiconductor module according to claim 4, characterized in that, In the first common-source terminal structure, the pins further include resistance detection pins; The substrate further includes a thermistor element, the first end of which is electrically connected to a first connector, and the second end of which is electrically connected to the first common source terminal structure through the first conductive part.

6. The power semiconductor module according to claim 5, characterized in that, In the first common source terminal structure, the auxiliary source drive pin and the resistance detection pin are located on opposite sides of the support portion.

7. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module is electrically connected to the gate detection circuit and the AC circuit; The common source terminal structure includes a second common source terminal structure; in the second common source terminal structure, the auxiliary source drive pin is electrically connected to the negative terminal of the gate detection circuit, and the power terminal is electrically connected to the AC circuit.

8. The power semiconductor module according to claim 7, characterized in that, In the second common-source terminal structure, the pins also include output detection pins.

9. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module is electrically connected to a DC circuit. The plurality of conductive portions include a second conductive portion electrically connected to the drain of the chip; The plurality of terminal structures also include a power terminal structure; in the power terminal structure, the pins include drain pins, the terminals are electrically connected to the second conductive part, and the power terminal structure also includes a power terminal connected to the support part and the power terminal is electrically connected to the positive terminal of the DC circuit.

10. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module is electrically connected to the gate driver; The plurality of conductive portions include a third conductive portion electrically connected to the gate of the chip; The plurality of terminal structures further includes a first driving terminal structure; in the first driving terminal structure, the pins include driving pins, the driving pins are electrically connected to the positive terminal of the gate driver, and the terminals are electrically connected to the third conductive portion.

11. The power semiconductor module according to claim 1, characterized in that, The power semiconductor module is electrically connected to the gate detection circuit. The plurality of conductive portions include a third conductive portion electrically connected to the gate of the chip; The plurality of terminal structures further includes a second driving terminal structure; in the second driving terminal structure, the pins include driving pins, the driving pins are electrically connected to the positive terminal of the gate detection circuit, and the terminals are electrically connected to the third conductive part.

12. The power semiconductor module according to claim 1, characterized in that, The substrate includes at least two bridge arm units; The bridge arm unit includes a plurality of chip groups arranged along a first direction, and the chip groups include a plurality of chips arranged along a second direction. The first direction and the second direction intersect. The bridge arm unit also includes a plurality of conductive portions arranged along the first direction. The plurality of conductive portions include a first conductive portion, a second conductive portion, and a third conductive portion. The source of the chip is electrically connected to the first conductive portion, the drain of the chip is electrically connected to the second conductive portion, and the gate of the chip is electrically connected to the third conductive portion.

13. The power semiconductor module according to claim 12, characterized in that, The power semiconductor module is electrically connected to the gate driver and the gate detection circuit; The bridge arm unit includes two third conductive parts and two chipsets. One third conductive part is electrically connected to the positive terminal of the gate driver, and the other third conductive part is electrically connected to the positive terminal of the gate detection circuit.

14. A power device, characterized in that, include: The power semiconductor module according to any one of claims 1-13.

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