Curable composition and insulating film

Abstract

The present disclosure provides a curable composition comprising (a) an epoxy resin; (b) a hardener; (c) a curing catalyst; (d) boron nitride as a filler; and (e) optional additives. The present disclosure also provides an insulating film comprising the above curable composition, which is particularly suitable for use in the manufacture of printed circuit boards (PCBs). The insulating film exhibits excellent electrical properties, including low dissipation factor (Df) and low coefficient of thermal expansion (CTE). Furthermore, the insulating film provides significant advantages in reducing production time in the PCB manufacturing process involving a plasma etching step.

Description

Technical Field

[0001] This disclosure generally relates to a curable composition containing boron nitride, and more particularly to an insulating film and / or printed circuit board comprising the curable composition. Background Technology

[0002] Due to the current trend of electronic products becoming thinner and lighter, printed circuit boards (PCBs) must have higher wiring density. PCBs are typically composed of multiple insulating and conductive layers stacked on top of each other. To achieve high wiring density, vias or blind vias are provided to connect circuits between different conductive layers.

[0003] Conventional via fabrication techniques use lasers as the drilling tool. The friction generated during drilling creates resin contaminants on the channel walls. These contaminants must be removed to achieve optimal bonding. Typically, a wet process is used after laser drilling to remove the contaminants and create suitable through-holes. This wet process includes surface cleaning, contaminant swelling, permanganate decontamination, and neutralization. However, the wastewater discharged at each step carries significant amounts of harmful substances and can potentially degrade the environment and harm human physical and mental health.

[0004] Compared to subtractive or (modified) semi-additive methods in PCB manufacturing, patterning and / or via formation via plasma etching is considered a more environmentally friendly approach because it does not involve wet processes. However, the etching rate of plasma etching is typically too slow to make PCB manufacturing cost-effective. For example, U.S. Patent Publication No. 20220201853 A1 discloses the use of plasma etching to fabricate multilayer circuit structures with embedded circuit layers, but the materials tested in this prior art exhibited etching rates of less than 1.0 μm / min.

[0005] In view of the above, there is a need to develop new materials for PCB insulation layers, and their ability to be processed by plasma etching technology brings overall benefits to the printed circuit board industry. Summary of the Invention

[0006] To address the aforementioned problems, this disclosure provides a novel composition for PCB insulating layers. PCBs constructed with this material exhibit high plasma etching rates without sacrificing their electrical and mechanical properties, such as loss factor (Df) and coefficient of thermal expansion (CTE). This novel composition is a viable alternative to conventional PCB insulating layers.

[0007] According to one aspect of this disclosure, a curable composition is provided. The curable composition comprises: 100 parts by weight of epoxy resin having an average epoxy equivalent of 500 g / eq or less; 35-300 parts by weight of hardener; 0.025-20 parts by weight of curing catalyst; and 50-420 parts by weight of packing material, wherein the packing material contains boron nitride and has a median particle size of 8 μm or less and a maximum particle size of up to 20 μm.

[0008] According to a second aspect of this disclosure, an insulating film comprising the above-described curable composition is also provided. The insulating film sequentially comprises a support film, a resin layer composed of the above-described curable composition, and a protective film. The resin layer has a thickness of 10 μm to 60 μm.

[0009] According to a third aspect of this disclosure, a printed circuit board is also provided. The PCB includes an insulating layer, which is a cured product of the above-described curable composition or is made of the above-described insulating film. Attached Figure Description

[0010] Figure 1 A cross-sectional view of a test specimen according to an embodiment of the present disclosure is shown. Detailed Implementation

[0011] Before presenting the details of the following embodiments, some terms are defined or clarified. definition

[0012] Unless otherwise stated, all publications, patent applications, patents and other references mentioned herein are expressly incorporated herein in their entirety by reference for all purposes, as if fully expounded.

[0013] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. In case of conflict, this specification (including definitions) shall prevail.

[0014] Unless otherwise stated, all percentages, parts, ratios, etc. are by weight.

[0015] As used herein, the term “produced by” is synonymous with “comprising”. As used herein, the terms “comprises,” “comprising,” “includes,” “including,” “has,” “having,” “contains,” or “containing,” or any other variation thereof, are intended to cover non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to those elements, but may include other elements not expressly listed or inherent to such a composition, process, method, article, or apparatus.

[0016] The transitional phrase "composed of..." excludes any unspecified elements, steps, or components. If in a claim, such a phrase limits the claim to exclude materials other than those listed, except typically associated with impurities. When the phrase "composed of..." appears in a clause of the body of a claim, rather than immediately following the preamble, it limits only the elements set forth in that clause; other elements are not excluded from the claim as a whole.

[0017] The transitional phrase “consistently of” is used to define a composition, method, or apparatus that includes, in addition to those discussed literally, materials, steps, features, components, or elements, provided that such additional materials, steps, features, components, or elements do not materially affect the claimed essential and novel features.

[0018] The term "basically composed of" falls in the middle between "contains" and "composes of".

[0019] The term "comprising" is intended to include embodiments covered by the terms "substantially consisting of" and "consisting of". Similarly, the term "substantially consisting of" is intended to include embodiments covered by the term "consisting of".

[0020] Epoxy equivalent (EEW) is the weight in grams (g / eq) of uncured resin containing the equivalent of one mole of epoxy groups. EEW depends on the molecular weight and can be used to determine the concentration of the curing agent.

[0021] When quantities, concentrations, or other values ​​or parameters are given as ranges, preferred ranges, or a series of upper and lower preferred values, this should be understood as specifically disclosing all ranges formed by any pairing of any upper or preferred value with any lower or preferred value, regardless of whether the range is disclosed individually. For example, when the range “1 to 5” is listed, the listed range should be interpreted as including ranges such as “1 to 4”, “1 to 3”, “1-2”, “1-2 and 4-5”, “1-3 and 5”, etc. When numerical ranges are listed herein, unless otherwise stated, the range is intended to include its endpoints, as well as all integers and fractions within that range.

[0022] Furthermore, unless explicitly stated otherwise, "or" refers to an inclusive "or," not an exclusive "or." For example, condition A "or" B is satisfied by any of the following: A is true (or exists) and B is false (or does not exist), A is false (or does not exist) and B is true (or exists), and both A and B are true (or exist).

[0023] This disclosure is described in detail below.

[0024] This disclosure relates to a curable composition comprising: 100 parts by weight of epoxy resin having an average epoxy equivalent of 500 g / eq or less; 35-300 parts by weight of hardener; 0.025-20 parts by weight of curing catalyst; and 50-420 parts by weight of packing material, wherein the packing material contains boron nitride and has a median particle size of 8 μm or less and a maximum particle size of up to 20 μm.

[0025] In one embodiment of this disclosure, the curable composition further comprises no more than 70 parts by weight of additive / 100 parts by weight of epoxy resin. In another embodiment of this disclosure, the curable composition further comprises 25-70 parts by weight of additive / 100 parts by weight of epoxy resin.

[0026] Non-limiting examples of epoxy resins include bisphenol A epoxy resins, bisphenol F epoxy resins, glycidylamine epoxy resins, biphenyl epoxy resins, naphthalene epoxy resins, anthracene epoxy resins, fluorene epoxy resins, biphenyl aralkylphenol epoxy resins, dicyclopentadiene epoxy resins, trihydroxyphenylmethane epoxy resins, naphthol aralkyl epoxy resins, phenol aralkyl epoxy resins, phenol linear phenolic epoxy resins, cresol linear phenolic epoxy resins, bisphenol linear phenolic epoxy resins, naphthol-cresol linear phenolic epoxy resins, naphthyldiol linear phenolic epoxy resins, and hydrogenated or halogenated modified epoxy resins. However, in one embodiment of this disclosure, the epoxy resin is selected from the group consisting of the above epoxy resins and mixtures thereof.

[0027] Non-limiting examples of hardeners include reactive ester hardeners, carbodiimide hardeners, phenolic hardeners, naphthol hardeners, or acid hardeners. However, in one embodiment of this disclosure, the hardener is selected from the group consisting of the above hardeners and mixtures thereof.

[0028] In one embodiment of this disclosure, the hardener is free of cyanate ester resin. In another embodiment of this disclosure, the hardener comprises an active ester hardener.

[0029] In one embodiment of this disclosure, the curable composition comprises 40-200 parts by weight of a hardener per 100 parts by weight of epoxy resin. In another embodiment of this disclosure, the curable composition comprises 40-100 parts by weight of a hardener per 100 parts by weight of epoxy resin.

[0030] Non-limiting examples of curing catalysts include alkylamine catalysts, pyridine catalysts, imidazole catalysts, or piperidine catalysts. However, in one embodiment of this disclosure, the curing catalyst is selected from the group consisting of the above curing catalysts and mixtures thereof.

[0031] Non-limiting examples of additives include antioxidants, flame retardants, colorants, thickeners, defoamers, elastomers, surface conditioners, polymerization inhibitors, ultraviolet absorbers, solvents, silane coupling agents, adhesion promoters, or antioxidants. However, in one embodiment of this disclosure, the additive is selected from the group consisting of the above additives and mixtures thereof.

[0032] In one embodiment of this disclosure, the amount of additive does not exceed 70 parts by weight.

[0033] In one embodiment of this disclosure, the additive is at least one solvent selected from the group consisting of methyl ethyl ketone, toluene, cyclohexanone, cyclopentanone, isophorone, methyl isobutyl ketone, and mixtures thereof.

[0034] In one embodiment of this disclosure, the curable composition comprises 50-350 parts by weight of filler / 100 parts by weight of epoxy resin. In another embodiment of this disclosure, the curable composition comprises 100-300 parts by weight of filler / 100 parts by weight of epoxy resin. In yet another embodiment of this disclosure, the curable composition comprises 160-300 parts by weight of filler / 100 parts by weight of epoxy resin.

[0035] A second aspect of this disclosure relates to an insulating film for manufacturing printed circuit boards, particularly suitable for plasma etching. The insulating film comprises, in sequence: Support membrane; A resin layer composed of the above curable composition; and Protective film.

[0036] In one embodiment of this disclosure, the resin layer has a thickness of 10 μm to 60 μm. In another embodiment of this disclosure, the support film is a thermoplastic film with a thickness of 10 μm to 50 μm, or a metal foil with a thickness of 1 μm to 25 μm. In another embodiment of this disclosure, the protective film is a thermoplastic film with a thickness of 10 μm to 50 μm.

[0037] In one embodiment of this disclosure, the support film and the protective film are each independently composed of a polymer material selected from the group consisting of: polyethylene, polypropylene, polyvinyl chloride, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, and polyimide.

[0038] In one embodiment of this disclosure, the support film is a metal foil selected from the group consisting of Au, Ag, Cu, Al, and alloys thereof.

[0039] In one embodiment of this disclosure, the resin layer is cured at 100°C to 250°C for 60 to 240 minutes.

[0040] In one embodiment of this disclosure, the cured resin layer has a loss factor (Df) of 0.006 or less when measured at 10 GHz and 23°C.

[0041] In one embodiment of this disclosure, the cured resin layer has a coefficient of thermal expansion (CTE) of 40 ppm / K or less between 30°C and 120°C.

[0042] In one embodiment of this disclosure, the cured resin layer has a plasma etching rate of 1 μm / min or greater, and the plasma etching is performed for 15 minutes at a chamber pressure of 2 Pa (15 mTorr) by applying a radio frequency (RF) power of 13.56 MHz, an ignition power of 8000 watts, a DC bias setting of 3000 watts, and using a gas mixture of oxygen, tetrafluoromethane (carbon tetrafluoride, CF4) in a ratio of 10:10:1 and a flow rate of 1050 mL / sec.

[0043] A third aspect of this disclosure relates to a printed circuit board comprising an insulating layer, which is a cured product of the above-described curable composition or is made of the above-described insulating film.

[0044] In one embodiment of this disclosure, the printed circuit board includes circuitry manufactured by a method including plasma etching steps for via and / or trench formation.

[0045] In one embodiment of this disclosure, the method for forming the circuit is a semi-additive process (SAP) or a modified semi-additive process (mSAP). Composition and membrane preparation

[0046] The curable composition disclosed herein comprises the following components: (a) an epoxy resin; (b) a hardener; (c) a curing catalyst; (d) boron nitride as a filler; and (e) optional additives. In a non-limiting aspect, the composition aspect of this disclosure can be prepared from the components listed in Table A below. First, the epoxy resin, boron nitride filler, and solvent are mixed and dissolved, and then other components, including the hardener, catalyst, and optional additives, are added until they are completely dissolved to form a varnish. The composition is prepared into two different samples: a resin-coated copper (RCC) film structure and a resin sheet structure, for further testing. Table A The median particle size (D50) of boron nitride was measured using a laser scattering particle size distribution analyzer. Example 1

[0047] 47 g of PCTP05 (boron nitride filler from Saint-Gobain) was mixed with 35 g of MEK (methyl ethyl ketone), 15 g of toluene, and 23.6 g of YL7890 (biphenyl epoxy resin from Mitsubishi Chemicals). The mixture was stirred for 20 minutes until the YL7890 epoxy resin was completely dissolved. Then, 1 g of GPH65 (phenolic curing agent from Nippon Kayaku Co., Ltd.), 19.7 g of HPC-8150 (active ester curing agent from DIC, 62% in solution), 0.36 g of 1B2PZ (catalyst from Shikoku Chemicals), and 4.1 g of LA-1356 (triazine phenol curing agent from DIC, 60% in MEK solution) were added. The mixture was stirred again until all components were completely dissolved.

[0048] Add the final component, 14.5 g of VO3 (carbodiimide from Nisshinbo Holdings, Inc., 50% in toluene), to the mixture and stir for another 30 minutes to obtain the resin varnish. This hardener is added separately to prevent solvent compatibility issues. In other examples, all components may be mixed at once.

[0049] The obtained resin varnish was applied to the support film MT18FL-3 μm (two layers of copper foil, with the upper layer being 3 μm thick and the lower layer being 18 μm thick) at a coating speed of approximately 60 mm / s using a suitable quadruple film coater (GMA Machinery, Taiwan) on an automatic coater (Coatmaster 510, purchased from Erichsen GmbH). The coated film was then dried at 100°C for 3 minutes in a circulating oven (DCM704, purchased from Channel Instruments, Taiwan). After drying, the film was covered with 38X (protective film) to form a resin-coated copper (RCC) film structure sample.

[0050] Additionally, the mixed varnish is applied to 38X (protective film) and dried at 100°C for 3 minutes. Then, the dried film is covered with MA411 (protective film) to form a resin sheet structure.

[0051] In both of the above structures, the thickness of the composite layer is 30 μm. Example 2

[0052] The composition of Example 1, wherein the filler is replaced with PT180 (BN, median particle size of 7 μm) and the amount is the same (47 g). Comparison Example 1

[0053] The composition of Example 1, wherein the filler is replaced with SG-SO0700 (silica) and the amount is the same (47g). Comparison Example 2

[0054] The composition of Example 1, wherein the filler is replaced with SFP130MC (silica) and the amount is the same (47 g). Example 3

[0055] The composition of Example 1, wherein the filler is replaced with 70 g PT180 (BN) and the epoxy resin is replaced with 23.6 g ESN-475V (α-naphthol aralkyl epoxy resin manufactured by Nippon Steel Chemical Co., Ltd.). Example 4

[0056] The composition of Example 3, wherein the filler is adjusted to 47 g PT180 (BN). Example 5

[0057] The composition of Example 3, wherein the filler is adjusted to 25 g PT180 (BN). Comparison Example 3

[0058] The composition of Example 3, wherein the filler is replaced with SFP130MC (silica) and the amount is 87 g. Comparison Example 4

[0059] The composition of Example 3, wherein the filler is replaced with SFP130MC (silica) and the amount is 47 g. Comparison Example 5

[0060] The composition of Example 3, wherein the filler is replaced with SFP130MC (silica) and the amount is 25 g.

[0061] The actual solid content of the components in the above examples and comparative examples is listed in Table B. The abbreviation "E" stands for "Example," and "CE" stands for "Comparative Example." The examples and comparative examples were prepared in a similar manner. The difference between the examples and the comparative examples lies in the filler. Examples 1-5 used boron nitride as the filler, while comparative examples 1-5 used silica as the filler. Table B Measuring the plasma etching rate of RCC films Test sample preparation

[0062] The RCC films from the above examples and comparative examples were further processed as follows to prepare samples for plasma etching tests: Lamination: A 15 cm × 20 cm RCC film was laminated onto an EM526 H / H core board (15 cm × 20 cm, 0.6 mm thick) pretreated with CZ-8100 (a pretreatment solution prepared by MEC). The vacuum laminator was heated to 100°C and evacuated for 30 seconds, then pressurized to 7 kgf / cm² at 100°C. 2 Lasts 90 seconds. Curing: Cur the laminated sample in an airflow oven at 130°C for 30 minutes; at 180°C for 30 minutes; and then at 200°C for 90 minutes. Copper removal: After curing, the support layer MT18FL (copper carrier of RCC film) is removed. Tenting: A hard mask window (40 μm / 40 μm line / spacing pattern) is formed on the surface of the cured sample (without a carrier). The sample is then cut to a size of 5 cm × 5 cm to be used as a test specimen.

[0063] The structure of the test specimen is in Figure 1 As shown above. The test specimen includes a core layer EM526 (11) and its covering copper (12), a dielectric layer 20 (a curable composition of the present disclosure), and a metal hard mask 30. Subsequent plasma processing will etch the dielectric layer 20 through a window of the hard mask 30. Plasma etching and measurement

[0064] The specimens for both the example and comparative examples were subjected to plasma treatment, and the etching depth was measured using a 3D optical microscope (Olympus Lext OLS5100, 50× objective). The etching depth was calculated as the depth from the surface minus the thickness of the hard mask. The etching rate was calculated by dividing the etching depth by the processing time. The test results for each specimen are listed in Table C. Table C Plasma etching conditions: Ignition 8 kW; bias 3 kW; RF frequency 13.56 MHz; gas flow rates: oxygen 500 cc / min, CF4 500 cc / min, N2 50 cc / min; etching duration 15 minutes.

[0065] As shown in Table C, the plasma etching rates of Examples 1-5 of this disclosure are greater than 0.9 μm / min. Plasma etching rates can reach greater than 1 μm / min. Plasma etching rates can further reach greater than 1.3 μm / min. In contrast, Comparative Examples 1-5 have relatively low plasma etching rates and may not be suitable for industrial applications. Measuring Df and CTE of resin sheets Sample preparation

[0066] The resin sheets from the examples and comparative examples were further processed as follows to prepare samples for measuring Df and CTE: Lamination: Multiple resin sheets, each 10 cm × 10 cm in size, are laminated together using a vacuum laminator to form a dielectric layer with a thickness of 60 μm. The vacuum laminator is heated to 100°C and evacuated for 30 seconds, then pressurized to 7 kgf / cm² at 100°C. 2 Lasts 90 seconds. Curing: Cur the laminated sample in an airflow oven at 130°C for 30 minutes; at 180°C for 30 minutes; and then at 200°C for 90 minutes. PET film removal: After curing, remove the protective layer 38X (PET film). The loss factor (Df) of the dielectric / insulator was measured at a frequency of 10 GHz using the resonant cavity method. The coefficient of thermal expansion (CTE) was measured using a TA Instruments TMA 650 thermomechanical analyzer. Samples were heated to 280°C, cooled to room temperature, and then reheated at a rate of 5°C / min under a preload of 0.098 N. CTE was calculated as the slope of the dimensional change during the second heating cycle relative to the temperature from 50°C to 100°C. The test results for each sample are listed in Table D. Table D

[0067] The curable compositions disclosed herein are particularly suitable for use in the manufacture of printed circuit boards (PCBs).

[0068] As shown in Table D, when the filler is replaced with BN instead of conventionally used silica, the loss factor (Df) and coefficient of thermal expansion (CTE) of Examples 1-5 are comparable to those of Comparative Examples 1-5. In some examples, the loss factor (Df) and CTE are superior to those of the comparative examples. For example, the CTE can be as low as 13 ppm / °C. The insulating film having the curable composition of the present invention exhibits excellent electrical properties, including a low loss factor (Df) and a low coefficient of thermal expansion (CTE). Furthermore, this insulating film offers a significant advantage in reducing production time in PCB manufacturing processes involving plasma etching steps. Manufacturing PCBs with curable compositions Step 1: Fabrication of a substrate with existing circuitry

[0069] PCBs with pre-existing circuitry were fabricated using EM526 (core board, 64 μm thick with 22 μm copper thickness, supplied by Elite Electronic Material Co. Ltd.). Step 2: Laminate the RCC sample onto the substrate.

[0070] The RCC sample from Example 1 was laminated onto the substrate using a laminator (Vigor VLPH-150 ton vacuum laminator). After lamination, the lower layer of the support film was removed, and the structure from top to bottom consisted of copper, resin, and the substrate. Step 3: Pattern the metal to form a hard mask

[0071] A photoresist layer is formed by laminating a dry film (Riston® DI61, 15 μm thickness, manufactured by DuPont Electronics, Inc.) onto the copper layer of the substrate from step 2 using a roller laminator at 100°C, 1.4 MPa pressure, and a rolling speed of 1.0 m / min.

[0072] A photoresist pattern was formed using a direct exposure patterning machine (FDi3 from ORC) to create the desired pattern. Uncured portions of the photoresist layer were peeled off and removed by treating with a 2% Na2CO3 solution for 3 minutes, followed by rinsing with DI water and drying.

[0073] Unmasked copper areas were etched away at a rate of 1 m / min along the conventional horizontal line using a sodium persulfate (Na2S2O8) solution (130 g / L) until completion, followed by rinsing with DI water and drying. The photoresist pattern was then stripped and removed by treating with a 10% NaOH solution for 90 seconds, followed by rinsing and drying to form a copper hard mask on the substrate. Step 4: Plasma etching of the dielectric layer

[0074] The exposed areas of the dielectric layer were removed by plasma etching using a reactive ion etching plasma system (manufactured by Linco Tech). The process gas was a mixture of CF4 (500 ml / sec), O2 (500 ml / sec), and N2 (50 ml / sec), ignited at 8 kW and DC biased at 3 kW, for 20 minutes to expose the existing conductor underneath. Step 5: Formation of the seed layer

[0075] The seed layer was formed by sputtering copper using a PVD coating machine (manufactured by UVAT Technology Co., model: UHSD-060302T) with a copper base concentration of 4 N. The resulting copper layer had a thickness of 0.8 μm. Step 6: Adding the photoresist pattern layer

[0076] A dry film (Riston® DI61, 25 μm thickness, manufactured by DuPont Electronics) is laminated onto a copper layer using a roller laminator at 100°C, 1.4 MPa pressure, and a rolling speed of 1.0 m / min to form a photoresist layer.

[0077] Photoresist patterns were formed using a direct exposure patterning machine (FDi3 from ORC) with standard test patterns for PCB manufacturers (including 15 μm / 15 μm line / pitch groups). Uncured portions of the photoresist layer were peeled off and removed by treating with a 2% Na2CO3 solution for 3 minutes, rinsed with DI water, and dried. Step 7: Fill trenches and vias with metal deposition

[0078] Electroplating was applied to fill the trenches and vias with copper. The samples were plated for 40 minutes with a plating solution (SFP2M from DuPont) at 23.13 ASF (amplitude / square feet) for a copper thickness of 22 μm. Step 8: Remove photoresist

[0079] The photoresist pattern was stripped by treating the area with a 10% NaOH solution for 90 seconds. Step 9: Remove the hard mask layer

[0080] Flash etching to remove hard mask layers is performed in the following manner: Immerse the sample in a 5 vol% sulfuric acid aqueous solution for 20 seconds. The sample was transferred to an etching solution (Chemtronic Technologies ST121-M) for 48 seconds. Rinse with DI water to remove any residual solution.

[0081] After the flash etching process, a new circuit layer with vias and wires is completed.

[0082] It will be apparent to those skilled in the art that various modifications and changes can be made to the disclosed embodiments. This specification and examples are intended to be considered merely exemplary, and the true scope of this disclosure is indicated by the following claims and their equivalents.

Claims

1. A curable composition comprising: 100 parts by weight of epoxy resin having an average epoxy equivalent of 500 g / eq or less; 35-300 parts by weight of hardener; -20 parts by weight of curing catalyst; and 50-420 parts by weight of filler, wherein the filler comprises boron nitride and has a median particle size of 8 μm or less and a maximum particle size of up to 20 μm.

2. The curable composition of claim 1, wherein, The hardener does not contain cyanate ester resin.

3. The curable composition of claim 1, wherein, The epoxy resins include bisphenol A epoxy resins, bisphenol F epoxy resins, glycidylamine epoxy resins, biphenyl epoxy resins, naphthalene epoxy resins, anthracene epoxy resins, fluorene epoxy resins, biphenyl aralkylphenol epoxy resins, dicyclopentadiene epoxy resins, trihydroxyphenylmethane epoxy resins, naphthol aralkyl epoxy resins, phenol aralkyl epoxy resins, phenol linear phenolic epoxy resins, cresol linear phenolic epoxy resins, bisphenol linear phenolic epoxy resins, naphthol-cresol linear phenolic epoxy resins, naphthyldiol linear phenolic epoxy resins, hydrogenated or halogenated modified epoxy resins, or mixtures thereof.

4. The curable composition of claim 1, wherein, The hardener includes active ester hardeners, carbodiimide hardeners, phenolic hardeners, naphthol hardeners, acid hardeners, or mixtures thereof.

5. The curable composition of claim 1, wherein, The curing catalyst includes alkylamine catalysts, pyridine catalysts, imidazole catalysts, piperidine catalysts, or mixtures thereof.

6. The curable composition of claim 1, wherein, The curable composition further comprises no more than 70 parts by weight of additives, and the additives include antioxidants, flame retardants, colorants, thickeners, defoamers, elastomers, surface conditioners, polymerization inhibitors, ultraviolet absorbers, solvents, silane coupling agents, adhesion promoters, antioxidants, or mixtures thereof.

7. The curable composition of claim 1, wherein, The additive is at least one solvent selected from the group consisting of methyl ethyl ketone, toluene, cyclohexanone, cyclopentanone, isophorone and methyl isobutyl ketone, and mixtures thereof.

8. An insulating film suitable for plasma etching, said insulating film comprising a resin layer made of the curable composition of claim 1, wherein, The resin layer has a thickness of 10 μm to 60 μm.

9. The insulating film as claimed in claim 8, wherein, The insulating film further includes Support film and protective film; and The resin layer is disposed between the support film and the protective film.

10. The insulating film as claimed in claim 9, wherein, The support film and the protective film are each independently composed of a polymer material selected from the group consisting of: polyethylene, polypropylene, polyvinyl chloride, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, and polyimide.

11. The insulating film as claimed in claim 9, wherein, The support film is a metal foil selected from the group consisting of: Au, Ag, Cu, Al, and their alloys.

12. The insulating film as claimed in claim 8, wherein, When measured at 10 GHz and 23°C, the cured resin layer has a loss factor (Df) of 0.006 or less, and the curing is carried out at 100°C to 250°C for 60 to 240 minutes.

13. The insulating film as claimed in claim 8, wherein, The cured resin layer has a coefficient of thermal expansion (CTE) of 40 ppm / K or less between 30°C and 120°C, and the curing is carried out at 100°C to 250°C for 60 to 240 minutes.

14. The insulating film as claimed in claim 8, wherein, The cured resin layer has a plasma etching rate of 1 μm / min or greater, and the plasma etching is carried out for 15 minutes at a chamber pressure of 2 Pa by applying a 13.56 MHz radio frequency (RF) power, an 8000 watt ignition power, and a 3000 watt DC bias, using a gas mixture of oxygen, tetrafluoromethane, and nitrogen in a ratio of 10:10:1 and a flow rate of 1050 mL / sec, and the curing is carried out at 100°C to 250°C for 60 to 240 minutes.

15. A printed circuit board comprising an insulating layer, said insulating layer being a cured product of the curable composition of claim 1.

16. The printed circuit board of claim 15, wherein, The printed circuit board includes circuitry manufactured by a method comprising a plasma etching step for via and / or trench formation.

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