Solar cell, preparation method thereof, laminated cell and photovoltaic module
By setting regions with different doping concentrations on the surface of the silicon substrate and using staged laser scanning technology, the problems of high fragmentation rate and uneven deposition thickness caused by silicon substrate bending were solved, thereby improving the yield and performance of the battery.
CN122269883APending Publication Date: 2026-06-23ZHEJIANG JINKO SOLAR CO LTD
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Patent Information
- Application Number
- CN202610442964.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-17
- Publication Date
- 2026-06-23
AI Technical Summary
Technical Problem
In existing technologies, silicon substrates are prone to bending during laser film-forming, resulting in high fragmentation rates and poor uniformity of silicon nitride deposition thickness.
Method used
A first sub-region and a second sub-region with different doping concentrations are formed on the first surface of a silicon substrate. Stress during the laser film-opening process is released through staged laser scanning technology, thereby reducing the occurrence of silicon substrate bending.
Benefits of technology
It effectively reduces the fragmentation rate, ensures good uniformity of silicon nitride deposition thickness, and improves battery yield and electrical performance.
✦ Generated by Eureka AI based on patent content.
Abstract
The embodiment of the invention relates to the photovoltaic field, and provides a solar cell, a preparation method thereof, a laminated cell and a photovoltaic module, the solar cell comprises a silicon substrate, the silicon substrate comprises a first surface and a second surface which are oppositely arranged, the first surface comprises a first area and a second area which are alternately arranged along a first direction, the second region comprises a first sub-region and a second sub-region which are arranged along a second direction; the first region comprises a first doped region, the first sub-region comprises a second doped region, the second sub-region comprises a third doped region, and the doping concentration of the second doped region is greater than that of the third doped region; and the first metal gate line is electrically connected with the first doped region. The solar cell provided by the embodiment of the invention at least helps to improve the problems of high fragment rate and poor deposition thickness uniformity of silicon nitride and the like caused by bending of a silicon substrate in the prior art.
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