Substrate processing method, storage medium, and substrate processing apparatus

Abstract

A substrate processing method, a storage medium, and a substrate processing apparatus capable of suppressing film thickness variation among substrates are provided. The substrate processing method includes: performing liquid processing including supplying a processing liquid to a surface of a substrate held at a prescribed processing position using a liquid processing unit that holds the substrate at the processing position and supplies the processing liquid to the surface of the substrate, and holding the substrate after the processing liquid is supplied in a manner that enables a coating film of the processing liquid to be formed on the surface of the substrate; and performing temperature adjustment processing that adjusts a temperature of a member in the liquid processing unit that has an influence on a temperature of the substrate when the liquid processing is performed, before the liquid processing.

Description

[0001] This application is a divisional application of the application filed on August 25, 2021, with application number 202110983823.0 and entitled "Substrate Processing Method, Storage Medium and Substrate Processing Apparatus". Technical Field

[0002] This disclosure relates to a substrate processing method, a storage medium, and a substrate processing apparatus. Background Technology

[0003] Patent document 1 discloses a processing method characterized by giving the treated body a temperature distribution when applying a processing liquid to the treated body.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 5-36597 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] This disclosure provides a substrate processing method, a storage medium, and a substrate processing apparatus capable of suppressing film thickness variations between substrates.

[0009] Solution for solving the problem

[0010] One aspect of this disclosure relates to a substrate processing method comprising the following steps: performing liquid processing, the liquid processing comprising supplying processing liquid to the surface of the substrate held in the processing position using a liquid processing unit that holds the substrate in a predetermined processing position and supplies processing liquid to the surface of the substrate; and after supplying processing liquid, holding the substrate in such a way that a coating of processing liquid can be formed on the surface of the substrate; and performing a temperature adjustment process prior to liquid processing for adjusting the temperature of components in the liquid processing unit that affect the temperature of the substrate during the execution of liquid processing.

[0011] Another aspect of this disclosure relates to a substrate processing method comprising the following steps: performing liquid processing, the liquid processing comprising supplying the processing liquid to the surface of the substrate held at the processing position using a liquid processing unit that holds the substrate at a predetermined processing position and supplies the processing liquid to the surface of the substrate, and holding the substrate in such a manner that a coating of the processing liquid can be formed on the surface of the substrate after supplying the processing liquid; and performing a temperature adjustment process prior to the liquid processing to adjust the temperature of a component in the liquid processing unit that affects the temperature of the substrate during the liquid processing, the component including an inner cup, the inner cup being a receiving portion surrounding the substrate held at the processing position and configured in a state close to the outer periphery of the back side of the substrate, the temperature adjustment process comprising cooling the inner cup by supplying fluid to the inner cup, the temperature adjustment process further comprising supplying the fluid to the inner cup from the completion of the supply of the processing liquid to the surface of the substrate until the substrate is subsequently removed from the processing position.

[0012] Another aspect of this disclosure relates to a substrate processing apparatus comprising: a liquid processing unit that holds a substrate in a predetermined processing position and supplies a processing liquid to the surface of the substrate; and a control unit that controls the liquid processing unit, wherein the control unit causes the liquid processing unit to perform liquid processing, the liquid processing including supplying the processing liquid to the surface of the substrate held in the processing position, and holding the substrate in a manner capable of forming a coating of the processing liquid on the surface of the substrate after supplying the processing liquid, the control unit causing the liquid processing unit to perform a temperature adjustment process prior to the liquid processing. In the temperature control process, the temperature of a component in the liquid treatment unit that affects the temperature of the substrate during the liquid treatment is adjusted. The component includes an inner cup, which is a receiving portion surrounding the substrate held in the processing position and configured close to the outer periphery of the back side of the substrate. The temperature control process includes cooling the inner cup by supplying fluid to the inner cup. The temperature control process also includes supplying the fluid to the inner cup from the time the supply of the processing liquid to the surface of the substrate is completed until the substrate is removed from the processing position.

[0013] The effects of the invention

[0014] According to this disclosure, a substrate processing method, a storage medium, and a substrate processing apparatus are provided that can suppress film thickness variations between substrates. Attached Figure Description

[0015] Figure 1 This is a perspective view schematically illustrating an example of the substrate processing system according to the first embodiment.

[0016] Figure 2 This is a side view schematically illustrating an example of a coating and developing apparatus.

[0017] Figure 3 This is a schematic diagram illustrating an example of a liquid treatment unit.

[0018] Figure 4 This is a block diagram representing an example of the hardware structure of a control device.

[0019] Figure 5 This is a flowchart illustrating an example of a substrate processing method.

[0020] Figure 6 This is a flowchart illustrating an example of liquid processing.

[0021] Figure 7 This is a flowchart illustrating an example of temperature control processing.

[0022] Figure 8 This is a graph representing one example of the measurement results of film thickness variation involved in the comparative example.

[0023] Figure 9 This is a graph representing an example of the measurement results of film thickness variation involved in the first embodiment.

[0024] Figure 10 This is a schematic diagram illustrating an example of the liquid processing unit according to the second embodiment.

[0025] Figure 11 This is a flowchart illustrating an example of a substrate processing method.

[0026] Figure 12 This is a flowchart illustrating an example of temperature control processing.

[0027] Figure 13 (a) is a graph representing one example of the measurement results of film thickness variation involved in the comparative example. Figure 13 (b) and Figure 13 (c) is a graph representing an example of the measurement results of film thickness variation involved in the second embodiment.

[0028] Figure 14 This is a schematic diagram illustrating an example of the liquid processing unit according to the third embodiment.

[0029] Figure 15 This is a flowchart illustrating an example of a substrate processing method.

[0030] Figure 16 This is a flowchart illustrating an example of temperature control processing.

[0031] Figure 17This is a graph representing an example of temperature changes in the inner cup.

[0032] Figure 18 This is a flowchart illustrating an example of a substrate processing method.

[0033] Figure 19 (a) is a graph representing one example of the measurement results of film thickness variation involved in the comparative example. Figure 19 (b) is a graph representing an example of the measurement results of film thickness variation involved in the third embodiment.

[0034] Explanation of reference numerals in the attached figures

[0035] 2: Coating and developing apparatus; 30: Rotary holding unit; 32: Holding unit; 40: Processing liquid supply unit; 50: Solvent supply unit; 60: Gas supply unit; 70: Receiving unit; 82: Inner cup; 90: Solvent supply unit; 100: Control device; U1: Liquid processing unit; W: Workpiece; Wa: Surface; Wb: Back side. Detailed Implementation

[0036] The following describes various exemplary implementation methods.

[0037] An exemplary embodiment of the substrate processing method includes the following steps: performing liquid processing, the liquid processing including supplying processing liquid to the surface of the substrate held in the processing position using a liquid processing unit that holds the substrate in a predetermined processing position and supplies processing liquid to the surface of the substrate; and holding the substrate in such a way that a film of processing liquid is formed on the surface of the substrate after supplying processing liquid; and performing a temperature adjustment process prior to liquid processing to adjust the temperature of a component in the liquid processing unit that affects the temperature of the substrate during liquid processing.

[0038] In liquid processing using a processing solution, as a coating is formed after the processing solution is supplied, a portion of the liquid in the processing solution evaporates, and the temperature around the processing location may decrease due to the heat of vaporization. Therefore, when liquid processing is repeated, the temperature conditions around the processing location deviate each time, and the coating thickness may vary. To address this, in the aforementioned substrate processing method, by adjusting the temperature of components that affect the substrate temperature, liquid processing can be performed with reduced temperature deviations around the processing location. Thus, film thickness variations between substrates can be suppressed.

[0039] The processing conditions in temperature-controlled treatment can be set based on the start time of liquid treatment. The ambient temperature at the treatment location may vary depending on the start time of liquid treatment. Therefore, by setting the processing conditions for temperature-controlled treatment based on the start time of liquid treatment, the ambient temperature at the treatment location at the start of liquid treatment can be appropriately adjusted.

[0040] The aforementioned components may include a holding portion that supports the back side of the substrate in a manner that holds the substrate in the processing position. The temperature control process may include cooling the holding portion by supplying a first fluid to it. In this case, by cooling the holding portion, which affects the temperature of the substrate, before liquid processing, the degree to which the ambient temperature at the processing position decreases during liquid processing is reduced. Therefore, the temperature deviation around the processing position is reduced with each liquid processing, and film thickness variations between substrates can be suppressed.

[0041] Supplying a processing liquid to the surface of the substrate may involve rotating the holding portion, which is supporting the substrate, via a rotating holding portion connected to the holding portion while supplying the processing liquid to the surface of the substrate. Supplying a first fluid to the holding portion may involve supplying the first fluid to the central portion of the holding portion. The central portion of the holding portion is located near the drive portion used to rotate the holding portion, and the central portion tends to have a larger heat capacity than other portions. Therefore, by cooling the central portion of the holding portion, the degree of temperature regulation achieved through the temperature control process can be increased.

[0042] The aforementioned components may include an inner cup, which is a receiving portion surrounding a substrate held in a processing position and configured close to the outer periphery of the back surface of the substrate. Temperature control processing may include cooling the inner cup by supplying a second fluid to it. In this case, cooling the inner cup, which affects the temperature of the substrate before liquid processing, reduces the degree to which the ambient temperature at the processing position decreases with the execution of liquid processing. Therefore, the temperature deviation around the processing position during each liquid processing is reduced, thereby suppressing film thickness variations between substrates.

[0043] Cooling the inner cup by supplying a second fluid can include supplying solvent to the inner cup and maintaining a state where no solvent is supplied to the inner cup after the solvent is supplied. In this case, the cooling of the inner cup is advanced due to the heat of vaporization of the solvent after it is supplied to the inner cup, thus enabling the inner cup to be cooled while suppressing the amount of solvent used.

[0044] In the above-described substrate processing method, liquid processing can begin within a predetermined time period from when the inner cup is cooled to a target temperature by supplying a second fluid to the inner cup. In this case, liquid processing can begin when the ambient temperature at the processing location has decreased.

[0045] The aforementioned substrate processing method may further include: removing the substrate from the processing position after liquid processing; and supplying a second fluid to the inner cup during the period from the completion of liquid supply to the surface of the substrate until the substrate is removed from the processing position. In this case, temperature deviation of the inner cup during each liquid processing can be suppressed.

[0046] The aforementioned components may include a holding portion that supports the back side of the substrate in a manner that holds the substrate in a processing position. Supplying the processing liquid to the surface of the substrate may include supplying the processing liquid to the surface of the substrate while rotating the holding portion, which is supporting the substrate. Temperature control may include raising the temperature of the holding portion by rotating it in a state where the holding portion is not supporting the substrate. In this case, raising the temperature of the holding portion, which affects the temperature of the substrate, before performing liquid processing can suppress the decrease in the ambient temperature of the processing position as liquid processing is performed. Therefore, it is possible to reduce the temperature deviation around the processing position during each liquid processing and suppress film thickness variations between substrates.

[0047] An exemplary embodiment involves a storage medium that stores a computer-readable storage medium containing a program for causing the device to perform the above-described substrate processing method.

[0048] An exemplary embodiment of a substrate processing apparatus includes: a liquid treatment unit that holds a substrate in a predetermined processing position and supplies a processing liquid to the surface of the substrate; and a control unit that controls the liquid treatment unit. The control unit causes the liquid treatment unit to perform liquid treatment, which includes supplying the processing liquid to the surface of the substrate held in the processing position and, after supplying the processing liquid, holding the substrate in such a way that a film of the processing liquid is formed on the surface of the substrate. The control unit causes the liquid treatment unit to perform a temperature adjustment process before liquid treatment, in which the temperature of a component in the liquid treatment unit that affects the temperature of the substrate during liquid treatment is adjusted. In this substrate processing apparatus, similar to the substrate processing method described above, film thickness variations between substrates can be suppressed.

[0049] The embodiments will now be described with reference to the accompanying drawings. In the description, the same reference numerals are used to mark the same elements or elements having the same function, and repeated descriptions are omitted.

[0050] [First Implementation Method]

[0051] First, as an example of a system equipped with a substrate processing device, refer to Figures 1-7 The substrate processing system 1 according to the first embodiment will be described below. Figure 1The substrate processing system 1 shown is a system for forming a photosensitive coating on a workpiece W, exposing the photosensitive coating, and developing the photosensitive coating. The workpiece W, the object of processing, is, for example, a substrate, or a substrate that has been formed with a film or circuitry by performing a prescribed process. An example of the substrate included in the workpiece W is a silicon-containing wafer. The workpiece W (substrate) can be formed in a circular shape. The workpiece W, the object of processing, can be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate obtained by performing a prescribed process on these substrates. The photosensitive coating is, for example, a resist film.

[0052] The substrate processing system 1 includes a coating and developing apparatus 2 and an exposure apparatus 3. Before exposure processing in the exposure apparatus 3, the coating and developing apparatus 2 coats a resist (solution) onto the surface of the workpiece W to form a resist film. After exposure processing, the coating and developing apparatus 2 develops the resist film. The exposure apparatus 3 is an apparatus for exposing the resist film (photosensitive coating) formed on the workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the exposed portion of the resist film with energy rays using methods such as immersion exposure.

[0053] The structure of the coating and developing apparatus 2, which is an example of a substrate processing apparatus, will be described below. Figure 1 and Figure 2 As shown, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100 (control unit).

[0054] Workpiece W is introduced into the coating and developing apparatus 2 from the carrier block 4, and workpiece W is exported from the coating and developing apparatus 2 to the carrier block 4. For example, the carrier block 4 can support multiple carriers C for workpiece W, and a conveying device A1 including a transfer arm is built into the carrier block 4. The carriers C, for example, hold multiple circular workpieces W. The conveying device A1 is used to remove workpiece W from the carriers C and transfer it to the processing block 5, and to receive workpiece W from the processing block 5 and return it to the carriers C. The processing block 5 has processing modules 11, 12, 13, and 14.

[0055] Processing module 11 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for transporting workpiece W to these units. Processing module 11 forms a lower film on the surface of workpiece W using the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies a treatment liquid for forming the lower film onto the workpiece W. The heat treatment unit U2 performs various heat treatments necessary for the formation of the lower film.

[0056] Processing module 12 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for transporting workpiece W to these units. Processing module 12 forms a resist film on the lower film using the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 forms a coating of the treatment liquid on the surface of workpiece W by applying a treatment liquid for forming the resist film onto the lower film. The heat treatment unit U2 performs various heat treatments necessary for the formation of the resist film.

[0057] Processing module 13 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for transporting workpiece W to these units. Processing module 13 forms an upper film on the resist film using the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies a treatment liquid for forming the upper film onto the resist film. The heat treatment unit U2 performs various heat treatments necessary for the formation of the upper film.

[0058] Processing module 14 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for transporting workpiece W to these units. Processing module 14 performs development treatment on the exposed resist film and performs accompanying heat treatment via the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies a developer solution to the surface of the exposed workpiece W and then washes it off with a rinsing solution, thereby developing the resist film. The heat treatment unit U2 performs various heat treatments accompanying the development process. Specific examples of heat treatment include pre-development heat treatment (PEB: Post Exposure Bake) and post-development heat treatment (PB: Post Bake).

[0059] A frame unit U8 is provided on the side of the support block 4 within the processing block 5. The frame unit U8 is divided into multiple layers arranged in the vertical direction. A conveying device A7, including a lifting arm, is provided near the frame unit U8. The conveying device A7 causes the workpiece W to move up and down between the layers of the frame unit U8.

[0060] A frame unit U9 is provided on the side of the interface block 6 within the processing block 5. The frame unit U9 is divided into multiple layers arranged in the vertical direction.

[0061] Interface block 6 and exposure apparatus 3 exchange wafer W. For example, interface block 6 has a built-in transfer device A8 including a transfer arm, and interface block 6 is connected to exposure apparatus 3. Transfer device A8 transfers wafer W, which is disposed in rack unit U9, to exposure apparatus 3. Transfer device A8 receives wafer W from exposure apparatus 3 and returns wafer W to rack unit U9.

[0062] For example, the control device 100 controls the coating and developing apparatus 2 to perform the coating and developing process as follows. First, the control device 100 controls the conveying device A1 to convey the workpiece W in the carrier C to the rack unit U8, and controls the conveying device A7 to place the workpiece W in the layer for the processing module 11.

[0063] Next, the control device 100 controls the conveying device A3 to convey the workpiece W from the rack unit U8 to the liquid treatment unit U1 and the heat treatment unit U2 within the processing module 11. Additionally, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a lower film on the surface of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to return the workpiece W with the lower film formed to the rack unit U8, and controls the conveying device A7 to place the workpiece W in a compartment for the processing module 12.

[0064] Next, the control device 100 controls the conveying device A3 to transport the workpiece W from the rack unit U8 to the liquid treatment unit U1 and the heat treatment unit U2 within the processing module 12. Additionally, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a resist film on the surface of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to return the workpiece W to the rack unit U8 and controls the conveying device A7 to place the workpiece W in a compartment for the processing module 13.

[0065] Next, the control device 100 controls the conveying device A3 to transport the workpiece W from the rack unit U8 to the respective units within the processing module 13. Additionally, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form an upper film on the resist film of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to transport the workpiece W to the rack unit U9.

[0066] Next, the control device 100 controls the conveying device A8 to send the workpiece W of U9 to the exposure device 3. After that, the control device 100 controls the conveying device A8 to receive the workpiece W that has undergone exposure treatment from the exposure device 3 and place the workpiece W in the layer of the processing module 14 in the rack unit U9.

[0067] Next, the control device 100 controls the conveying device A3 to transport the workpiece W from the rack unit U9 to each unit within the processing module 14, and controls the liquid treatment unit U1 and the heat treatment unit U2 to perform the development treatment of the resist film on the workpiece W. Afterwards, the control device 100 controls the conveying device A3 to return the workpiece W to the rack unit U8, and controls the conveying devices A7 and A1 to return the workpiece W to the carrier C. Through the above process, the coating and development treatment of one workpiece W is completed. The control device 100 causes the coating and development device 2 to perform the same coating and development treatment on each of the multiple workpieces W as described above.

[0068] Furthermore, the specific structure of the substrate processing apparatus is not limited to the structure of the coating and developing apparatus 2 illustrated above. The substrate processing apparatus can be any substrate processing apparatus as long as it has a liquid processing unit for forming a coating of the processing liquid and a control device for controlling the liquid processing unit.

[0069] (Liquid processing unit)

[0070] Next, refer to Figure 3 Here is a detailed description of an example of the liquid treatment unit U1 in the processing module 12. The liquid treatment unit U1 holds the workpiece W in a predetermined processing position and supplies processing liquid to the surface Wa of the workpiece W held in that processing position, thereby performing liquid treatment on the workpiece W. By performing liquid treatment on the workpiece W, a film of processing liquid is formed on the surface Wa of the workpiece W. The processing position is the position in which the workpiece W, which is the object of processing, is held during the liquid treatment performed by the liquid treatment unit U1. For example... Figure 3 As shown, the liquid processing unit U1 has, for example, a rotating holding part 30 and a processing liquid supply part 40.

[0071] The rotating holding part 30 rotates the workpiece W while holding it in the processing position. The rotating holding part 30 includes, for example, a holding part 32 and a rotating drive part 34. The holding part 32 supports the back side of the workpiece W in a manner that holds the workpiece W in the processing position. The holding part 32 supports the back side Wb of the workpiece W with the surface Wa of the workpiece W facing upwards, for example, by vacuum suction. The holding part 32 can support the central portion of the back side Wb of the workpiece W. The holding part 32 includes, for example, a mounting part 33 and a shaft 36 supporting the mounting part 33, the mounting part 33 including a surface for mounting the central portion of the back side Wb of the workpiece W (hereinafter referred to as "mounting surface 33a"). The area of ​​the mounting surface 33a is smaller than the area of ​​the back side Wb of the workpiece W. In one example, the mounting surface 33a is formed as a circle, and the radius of the mounting surface 33a is approximately 1 / 3 to 1 / 2 of the radius of the workpiece W. As described above, the holding part 32 (placement surface 33a) is in contact with the back surface Wb of the workpiece W. Therefore, during liquid treatment, the temperature of the holding part 32 affects the temperature of the workpiece W. That is, the holding part 32 is a component that affects the temperature of the workpiece W during liquid treatment (hereinafter referred to as a "temperature-affecting component").

[0072] The rotary drive unit 34 is connected to the holding unit 32. For example, the rotary drive unit 34 is connected to the mounting unit 33 via the shaft 36. The rotary drive unit 34 rotates the shaft 36 (holding unit 32) about the vertical axis Ax, for example, using a power source such as an electric motor. As a result, the workpiece W rotates about the axis Ax. The holding unit 32 can hold the workpiece W in such a way that the center of the workpiece W is approximately aligned with the axis Ax (the center of rotation).

[0073] The processing fluid supply unit 40 supplies processing fluid to the surface Wa of the workpiece W held by the holding unit 32. The processing fluid is a solution (resist) for forming a resist film. The processing fluid supply unit 40 includes, for example, a nozzle 42, a tank 44, a valve 46, and a nozzle drive unit 48.

[0074] Nozzle 42 sprays treatment liquid from above the processing position onto the surface Wa of the workpiece W held by the holding part 32. Nozzle 42 is connected to tank 44 via pipe 49. Tank 44 contains treatment liquid and is used to supply treatment liquid toward nozzle 42. Valve 46 is provided in pipe 49. Valve 46 is, for example, a pneumatic valve, used to adjust the opening degree in pipe 49. By controlling valve 46, it is possible to switch between a state where treatment liquid is sprayed from nozzle 42 and a state where treatment liquid is not sprayed from nozzle 42. Nozzle drive unit 48 adjusts the position of nozzle 42. Nozzle drive unit 48 moves nozzle 42 along the surface Wa of workpiece W, for example, by a power source such as a motor.

[0075] (Control device)

[0076] like Figure 2 As shown, the control device 100 has a storage unit 102 and a control unit 104 as its functional structure. The storage unit 102 stores programs for operating each part of the coating and developing apparatus 2, including the liquid processing unit U1. The storage unit 102 also stores various data (e.g., information related to instruction signals for operating the liquid processing unit U1) and information from sensors installed in each part. The storage unit 102 can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a photomagnetic recording disk. The program can also be included in an external storage device independent of the storage unit 102, or in an intangible medium such as a signal transmission medium. The program can also be installed from these other media into the storage unit 102, so that the storage unit 102 stores the program.

[0077] The control unit 104 controls the operation of each part of the coating and developing apparatus 2 based on the program read from the storage unit 102. The control unit 104 causes the liquid treatment unit U1 to perform liquid treatment on the workpiece W. The liquid treatment includes supplying treatment liquid to the surface Wa of the workpiece W, which is held in the treatment position by the holding unit 32, and after supplying the treatment liquid, causing the holding unit 32 to hold the workpiece W in such a way that a coating of treatment liquid is formed on the surface Wa of the workpiece W. For example, when supplying treatment liquid to the surface Wa, the control unit 104 supplies treatment liquid to the surface Wa of the workpiece W by rotating the holding unit 32, which supports the workpiece W, by rotating the rotation drive unit 34. When forming the coating of treatment liquid, the control unit 104 rotates the holding unit 32 (workpiece W) by rotating the rotation drive unit 34 while the supply of treatment liquid is stopped.

[0078] The control unit 104 causes the liquid treatment unit U1 to perform a temperature adjustment process before performing the liquid treatment, which adjusts the temperature of the temperature-influencing component that affects the temperature of the workpiece W during the liquid treatment. When the control unit 104 performs the temperature adjustment process, it raises the temperature of the holding part 32, for example, by rotating the holding part 32 when it is not supporting the workpiece W. In this case, the temperature of the holding part 32 after the temperature adjustment process is performed is higher than the temperature of the holding part 32 when the temperature adjustment process is not performed. In one example, when the liquid treatment is performed on multiple workpieces W respectively, the control unit 104 causes the liquid treatment unit U1 to perform the temperature adjustment process between one liquid treatment and the next liquid treatment.

[0079] The control device 100 comprises one or more control computers. For example, the control device 100 has... Figure 4 The circuit 120 shown is equipped with one or more processors 121, a memory 124, a storage device 126, an input / output port 128, and a timer 132. The storage device 126 may be a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the control device 100 to execute the substrate processing method described later. The storage medium may be a retrievable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 124 temporarily stores the program loaded from the storage medium of the storage device 126 and the calculation results of the processor 122.

[0080] The processor 122 and memory 124 cooperate to execute the above program. The input / output port 128 inputs and outputs electrical signals to and from the rotation holding unit 30 and the processing fluid supply unit 40, etc., according to instructions from the processor 122. The timer 132 measures elapsed time, for example, by counting reference pulses of a fixed period. Furthermore, the hardware structure of the control device 100 can be constructed using dedicated logic circuits or an ASIC (Application Specific Integrated Circuit) obtained by integrating such logic circuits.

[0081] (Substrate processing method)

[0082] Next, as an example of a substrate processing method, refer to Figures 5-7 This describes a series of processes including liquid treatment and temperature control performed in the liquid treatment unit U1 of the processing module 12. Figure 5 This is a flowchart illustrating a series of processes performed sequentially on multiple workpieces W in a liquid treatment unit U1.

[0083] First, the control unit 104 of the control device 100 controls the conveying device A3 and the liquid treatment unit U1 to move the workpiece W, which is to be processed, into the liquid treatment unit U1 (step S01). For example, the control unit 104 controls the conveying device A3 and the liquid treatment unit U1 to place the workpiece W, which is to be processed, onto the holding part 32 of the rotating holding part 30, and the control unit 104 causes the holding part 32 to hold the workpiece W at the aforementioned processing position. Thus, the workpiece W is moved into the processing position within the liquid treatment unit U1. Before moving the workpiece W, which is to be processed, into the liquid treatment unit U1 (just before moving it in), the temperature of the workpiece W, which is to be processed, can be adjusted to a predetermined set temperature by the temperature adjustment unit provided in the coating and developing apparatus 2.

[0084] Next, the control unit 104 controls the liquid treatment unit U1 to perform liquid treatment on the workpiece W held in the treatment position by the holding unit 32 (step S02). The temperature inside the liquid treatment unit U1 (the temperature around the treatment position) can be adjusted at the time when liquid treatment of the first workpiece W begins, so that it is close to the above-mentioned set temperature. Specific examples of liquid treatment will be described later. In addition, the temperature can be adjusted during the liquid treatment process so that the temperature inside the liquid treatment unit U1 does not deviate (excessively) from the above-mentioned set temperature.

[0085] Next, the control unit 104 controls the conveying device A3 and the liquid treatment unit U1 to move the liquid-treated workpiece W out of the liquid treatment unit U1 (step S03). For example, the control unit 104 controls the liquid treatment unit U1 and the conveying device A3 to transfer the liquid-treated workpiece W from the holding part 32 to the conveying device A3 after the holding part 32 has released its adsorption of the workpiece W. Thus, the removal of the workpiece W from the processing position within the liquid treatment unit U1 is completed.

[0086] Next, the control unit 104 determines whether the processing of the predetermined number of workpieces W has been completed (step S04). In step S04, if it is determined that the processing of the predetermined number of workpieces W has not been completed (step S04: "No"), the control unit 104 causes the liquid treatment unit U1 to perform the temperature adjustment process described above (step S05). For example, the control unit 104 rotates the holding part 32, which is not holding workpiece W, by rotating the drive unit 34, so that the temperature of the holding part 32 rises. In one example, the control unit 104 rotates the holding part 32 by rotating the drive unit 34, so that the temperature of the holding part 32 approaches the target temperature. Specific examples of the temperature adjustment process will be described later. After step S05, the control unit 104 executes the processing of steps S01 to S04 again.

[0087] On the other hand, in step S04, if it is determined that the processing of the set number of workpieces W has been completed (step S04: "Yes"), the control unit 104 ends the series of processes. In the above series of processes, the processes of steps S01 to S05 are repeated until the set number of workpieces W have been processed. In this case, the temperature adjustment process of step S05 is performed after liquid processing is performed on one workpiece W and before liquid processing is performed on the subsequent workpiece W processed after that one workpiece W. In this example, the temperature adjustment process of step S05 is not performed before liquid processing is performed on the first workpiece W, but the control unit 104 may also cause the liquid processing unit U1 to perform the temperature adjustment process of step S05 before liquid processing is performed on the first workpiece W. Alternatively, the control unit 104 may cause the liquid processing unit U1 to perform the temperature adjustment process of step S05 after liquid processing is performed on the last workpiece W, and then end the above series of processes.

[0088] Figure 6 This is a flowchart illustrating an example of the liquid treatment in step S02. In the liquid treatment in step S02, firstly, the control unit 104 controls the rotating holding unit 30 to cause the holding unit 32, which holds the workpiece W that has been moved into the treatment position, to start rotating (step S11). For example, the control unit 104 controls the rotating holding unit 30 to cause the workpiece W to rotate about the axis Ax at a predetermined first rotational speed.

[0089] Next, the control unit 104 controls the processing fluid supply unit 40 to begin supplying processing fluid to the surface Wa of the workpiece W (step S12). For example, the control unit 104 controls the nozzle drive unit 48 to position the nozzle 42 of the processing fluid supply unit 40 facing the center of the workpiece W, in which case the valve 46 is switched from the closed state to the open state. As a result, processing fluid begins to be ejected from the nozzle 42 toward the center (rotation center) of the workpiece W, which is rotating via the rotation holding unit 30.

[0090] Next, the control unit 104 remains on standby from the start of the treatment fluid supply until a predetermined supply time has elapsed (step S13). This supply period and the aforementioned first rotational speed are stored in the storage unit 102. The supply period is set to a level that allows the treatment fluid to spread across the surface Wa of the workpiece W. Then, the control unit 104 controls the treatment fluid supply unit 40 to stop supplying treatment fluid to the surface Wa of the workpiece W (step S14). For example, the control unit 104 stops the spraying of treatment fluid from the nozzle 42 by switching the valve 46 from an open state to a closed state.

[0091] Next, the control unit 104 controls the rotation holding unit 30 to adjust the rotational speed of the workpiece W (step S15). For example, the control unit 104 controls the rotation holding unit 30 to reduce the rotational speed of the workpiece W from the first rotational speed to a second rotational speed. The second rotational speed is predetermined to be a value lower than the first rotational speed.

[0092] Next, the control unit 104 stands by after adjusting the rotation of the workpiece W to the second rotation speed in step S15, until a predetermined drying time has elapsed (step S16). This drying time and the aforementioned second rotation speed are stored in the storage unit 102 and set to the degree to which a coating of the treatment liquid is formed on the surface Wa of the workpiece W. Next, the control unit 104 controls the rotation holding unit 30 to stop the rotation of the workpiece W (step S17). Through the above process, the liquid treatment of one workpiece W is completed. In this liquid treatment, the control unit 104 uses the rotation holding unit 30 to continuously rotate the workpiece W at the second rotation speed for the specified drying time, thereby holding the workpiece W in such a way that a coating of the treatment liquid is formed on the surface Wa of the workpiece W. The liquid (solvent) contained in the treatment liquid supplied to the surface Wa of the workpiece W evaporates, thereby forming a coating of the treatment liquid. Due to the heat of vaporization generated by the evaporation of the solvent in the treatment liquid, the temperature around the treatment location (the temperature of temperature-affecting components such as the holding unit 32) will be lower than the aforementioned set temperature. Therefore, the temperature adjustment process in step S05 is performed.

[0093] Figure 7 This is a flowchart illustrating an example of the temperature adjustment process in step S05. In the temperature adjustment process in step S05, firstly, the control unit 104 controls the rotating holding unit 30 to start the rotation of the holding unit 32, which is not holding the workpiece W (step S21). For example, the control unit 104 controls the rotating holding unit 30 to rotate the holding unit 32 at a third rotational speed.

[0094] Next, the control unit 104 starts rotating the workpiece W at a third rotation speed and remains idle until the idle time has elapsed (step S22). Then, the control unit 104 controls the rotation of the holding unit 30 to stop the holding unit 32 from rotating (step S23). Thus, the first temperature adjustment process ends. The idle time and the third rotation speed can be predetermined and stored in the storage unit 102. In this case, the idle time and the third rotation speed can be set to make the temperature of the holding unit 32 close to the target temperature (close to the target range). The third rotation speed can be greater than the second rotation speed when forming the coating of the treatment liquid, or it can be greater than the first rotation speed when supplying (spraying) the treatment liquid.

[0095] The control unit 104 can set the processing conditions in the temperature-adjusting process based on the start timing of the liquid treatment following the temperature-adjusting process. These processing conditions include the aforementioned idle time and third rotation speed, and are used to define the operation of the liquid treatment unit U1 when performing the temperature-adjusting process. In other words, the control unit 104 causes the liquid treatment unit U1 to perform the temperature-adjusting process according to the processing conditions. The storage unit 102 can store information that correlates the idle time and third rotation speed with the rising temperature of the holding unit 32, as well as the target temperature of the holding unit 32. The control unit 104 can set the processing conditions based on the time between the start timing of the temperature-adjusting process and the start timing of the liquid treatment following the temperature-adjusting process (the time for loading the next workpiece W to be treated) (hereinafter referred to as the "processing waiting time"), so that the temperature of the holding unit 32 approaches the target temperature. In this case, the control unit 104 can determine the third rotation speed based on the idle time determined by the processing waiting time. The third rotation speed can be determined to be a value greater than the second rotation speed when forming the coating of the processing liquid, or it can be determined to be a value greater than the first rotation speed when supplying (spraying) the processing liquid. The control unit 104 can obtain information related to the start timing of the next liquid treatment (the timing of the next workpiece W being moved in) based on the condition of the workpiece W before liquid treatment, etc., before the start of the temperature control process.

[0096] The above-described series of processes, including liquid treatment and temperature control, is an example and can be modified as appropriate. For example, some of the above steps (processes) can be omitted, or the steps can be performed in a different order. Furthermore, any two or more of the above steps can be combined, or some steps can be modified or deleted. Alternatively, other steps can be performed in addition to the steps described above. In the example above, liquid treatment is performed on each pair of workpieces W, followed by the temperature control process in step S05. However, it is also possible to perform multiple liquid treatments on multiple pairs of workpieces W, followed by one temperature control process.

[0097] (Effects of the first implementation method)

[0098] The substrate processing method according to the first embodiment above includes the following processes: performing liquid processing, which includes using a liquid processing unit U1 that holds a workpiece W in a predetermined processing position and supplies processing liquid to the surface Wa of the workpiece W to supply processing liquid to the surface Wa of the workpiece W held in the processing position, and holding the workpiece W in such a way that a film of processing liquid is formed on the surface Wa of the workpiece W after supplying processing liquid; and performing a temperature adjustment process before liquid processing to adjust the temperature of a temperature-influencing member in the liquid processing unit U1 that affects the temperature of the workpiece W during liquid processing.

[0099] In liquid processing using a processing solution, as a coating is formed after the processing solution is supplied, a portion of the liquid in the processing solution evaporates, and the temperature around the processing location may drop due to the heat of vaporization. Therefore, when liquid processing is repeated, the temperature conditions around the processing location deviate each time, and the film thickness may vary. To address this, in the above-described substrate processing method, by adjusting the temperature of components that affect the temperature of the workpiece W, liquid processing can be performed with reduced temperature deviations around the processing location. Thus, film thickness variations between workpieces W can be suppressed.

[0100] In the above-described substrate processing method, the processing conditions for temperature control are set based on the start timing of liquid processing. The ambient temperature around the processing location may vary depending on the start timing of liquid processing. Therefore, by setting the processing conditions for temperature control based on the start timing of liquid processing, the ambient temperature around the processing location at the start of liquid processing can be appropriately adjusted.

[0101] As an example of a temperature-affecting component, a holding portion 32 that supports the back surface Wb of a workpiece W in a manner that holds the workpiece W in a processing position can be cited. In the above-described substrate processing method, supplying processing liquid to the surface Wa of the workpiece W includes supplying processing liquid to the surface Wa of the workpiece W while rotating the holding portion 32 in a state supporting the workpiece W. The temperature control process includes raising the temperature of the holding portion 32 by rotating the holding portion 32 in a state where the holding portion 32 does not support the workpiece W. In this case, raising the temperature of the holding portion 32, which affects the temperature of the workpiece W, before performing liquid processing can suppress the temperature drop around the processing position as liquid processing is performed. Therefore, the temperature deviation around the processing position during each liquid processing can be reduced, thereby suppressing film thickness variations between workpieces W.

[0102] Here, refer to Figure 8 and Figure 9 To further illustrate the effects of the substrate processing method involved in the first embodiment. Figure 8 This indicates the measurement results of the coating thickness (film thickness) in the comparative example where the temperature adjustment process in step S05 was not performed. In the film thickness measurement of the comparative example, five workpieces W were continuously subjected to the above-described liquid treatment, and the film thickness of the central portion of the treatment liquid coating on the surface Wa of the workpiece W was measured. The central portion of the coating, which is the object of film thickness measurement, corresponds to the portion of the workpiece W in contact with the holding portion 32 (placement surface 33a). The film thickness of multiple locations within the central portion of this coating was measured, and the average value was calculated as the film thickness of the central portion. Figure 8 In the diagram, the vertical axis represents the measured film thickness at the center of the coating, and the horizontal axis, "Wafer No.", indicates which of five wafers (W) was sequentially subjected to liquid treatment. Figure 8In the diagram, the circular markers represent the measured film thickness (average value), and the dashed lines represent the approximate straight lines calculated based on the measured film thickness.

[0103] according to Figure 8 The measurement results show that the more liquid treatments are performed, the smaller the film thickness in the central part becomes. The reason for this variation (decrease) in film thickness is believed to be the decrease in temperature around the treatment location due to the heat of vaporization generated when the solvent in the treatment liquid evaporates during heat treatment. In a single liquid treatment, when the workpiece W is rotated to form a coating after the treatment liquid is supplied, the evaporation of the solvent in the treatment liquid progresses in the early stage of coating formation, thus the temperature around the treatment location decreases compared to the aforementioned set temperature. Moreover, in the later stage of coating formation, the solvent hardly evaporates, and the temperature around the treatment location gradually rises towards the set temperature. After liquid treatment is completed (after the treatment liquid is supplied), sometimes the workpiece W is removed before the temperature around the treatment location rises to the set temperature, and the next liquid treatment is performed. In this case, the temperature around the treatment location in the next liquid treatment is lower than the temperature around the treatment location in the previous liquid treatment, and the thickness of the formed coating changes. In this regard, in the substrate processing method according to the first embodiment, by raising the temperature of the holding part 32 before liquid processing, it is possible to suppress the temperature drop around the processing position, and as a result, it is possible to suppress the variation of film thickness between workpieces W.

[0104] The degree of film thickness variation between workpieces W can be used Figure 8 The slope of the approximate straight line in the measurement results shown is represented. Figure 9 The results show the measurement of film thickness variation for the second to fifth workpieces W out of five workpieces W, after the temperature adjustment treatment in step S05 was performed before liquid treatment. Figure 9 In the diagram, the vertical axis represents the slope of an approximate straight line based on the film thickness measurements obtained from the central portion of the coating on five workpieces W (the variation in film thickness for each workpiece W), and the horizontal axis represents the rotation time of the holding portion 32 when the workpiece W is not being held. Figure 9 In the measurement of film thickness variation, the rotation speed and rotation time were each varied in three stages. Figure 9 In the table, "ω1", "ω2", and "ω3" represent the rotational speed (rpm), and the values ​​decrease in the order of ω3, ω2, and ω1. The rotation time varies in three stages: Rt1 (seconds), 2×Rt1 (seconds), and 3×Rt1 (seconds). The measured value Ft0 when the rotation time is zero represents the measurement result of the film thickness variation in the comparative example above (the slope of an approximately linear line). Furthermore, Figure 9 The measurement results do not include those obtained when the rotation time is set to 2×Rt1 (seconds) and the rotation speed is set to ω2.

[0105] Figure 9 The dashed, single-dotted, and double-dotted lines shown represent approximate straight lines calculated based on multiple measurements of film thickness variation obtained for each rotational speed. According to... Figure 9 The measurement results show that, compared to the measured value Ft0 representing the film thickness variation in the comparative example, the film thickness variation decreased after the temperature adjustment treatment in step S05 was performed. Furthermore, it is known that... Figure 9 Within the range of rotation time measurements, regardless of the rotation speed, the film thickness variation decreased further with increasing rotation time. Furthermore, by comparing approximate straight lines obtained for each rotation speed, it can be seen that... Figure 9 In the measurement results, within the range of rotational speed variation, the higher the rotational speed, the greater the slope (absolute value) of the approximate straight line, and the film thickness variation further decreases with rotation time. As described above, between consecutive liquid treatments, the temperature of the holding part 32 (the temperature around the treatment position) is increased by rotating the holding part 32, thereby suppressing the film thickness variation in the central part between the workpieces W.

[0106] [Second Implementation]

[0107] In the temperature control process described in the first embodiment, the temperature is adjusted to raise the temperature of the holding section 32. However, to reduce the film thickness deviation between liquid treatments of each workpiece W, a temperature control process can also be performed to lower the temperature of the holding section 32. The coating and developing apparatus 2 (processing module 12) of the substrate processing system according to the second embodiment includes a liquid treatment unit U10 instead of the liquid treatment unit U1. Figure 10 The liquid processing unit U10 according to the second embodiment is shown in the figure. For example... Figure 10 As shown, the liquid processing unit U10 includes, for example, a rotating holding part 30A, a processing liquid supply part 40, a solvent supply part 50, and a gas supply part 60.

[0108] The rotary retainer 30A also has an umbrella-shaped portion 38, which differs from the rotary retainer 30. The umbrella-shaped portion 38 prevents liquid from flowing to the rotary drive 34 via the bottom surface of the mounting portion 33 of the retainer 32 and the side surface of the shaft 36. The umbrella-shaped portion 38 is formed in a ring shape surrounding the shaft 36, and includes an inclined surface that slopes vertically downwards from the axis Ax. The outer edge of the inclined surface is located further outwards than the rotary drive 34. This prevents liquid from flowing through the bottom surface of the mounting portion 33, the side surface of the shaft 36, and the inclined surface of the umbrella-shaped portion 38, and into the motor of the rotary drive 34.

[0109] The liquid treatment unit U10 according to the second embodiment supplies fluid to the holding unit 32 through the solvent supply unit 50 and the gas supply unit 60, thereby cooling the holding unit 32. The fluid supplied to the holding unit 32 (hereinafter referred to as "first fluid") can be either a solvent (liquid) or a gas, as long as it can cool the holding unit 32, and can be any kind of solvent or gas.

[0110] The solvent supply unit 50 supplies the holding unit 32 with a solvent capable of cooling the holding unit 32 (hereinafter referred to as "cooling solvent"). The cooling solvent includes, for example, a diluent. The solvent supply unit 50 may supply the cooling solvent to the central portion of the holding unit 32. The central portion of the holding unit 32 is the portion located in the center with respect to the axis Ax. For example, the central portion of the holding unit 32 corresponds to the central portion of the shaft 36 and the mounting portion 33 having a radius approximately twice the radius of the shaft 36. The solvent supply unit 50 includes, for example, a nozzle 52, a can 54, and a valve 56.

[0111] Nozzle 52 is positioned below holding portion 32 and sprays cooling solvent toward holding portion 32 (e.g., the bottom surface of mounting portion 33). Nozzle 52 is configured to supply cooling solvent to holding portion 32 in a manner that does not touch the back surface Wb of the workpiece W held by holding portion 32. Nozzle 52 may be configured to spray cooling solvent toward the center of holding portion 32. For example, the spray direction of cooling solvent from nozzle 52 intersects axis Ax inside holding portion 32. Nozzle 52 is connected to tank 54 via pipe 58. Tank 54 contains cooling solvent and supplies cooling solvent toward nozzle 52. Valve 56 is provided in pipe 58. Valve 56 is, for example, a pneumatic valve, for adjusting the opening degree within pipe 58. By controlling valve 56, it is possible to switch between a state where cooling solvent is sprayed from nozzle 52 and a state where cooling solvent is not sprayed from nozzle 52.

[0112] The gas supply unit 60 supplies the holding unit 32 with a gas capable of cooling the holding unit 32 (hereinafter referred to as "cooling gas"). The cooling gas includes, for example, nitrogen gas. The gas supply unit 60 can supply cooling gas to the aforementioned central portion of the holding unit 32. The gas supply unit 60 includes, for example, a nozzle 62, a gas source 64, and a valve 66.

[0113] A nozzle 62 is positioned below the retaining portion 32 and ejects cooling gas toward the retaining portion 32 (e.g., the bottom surface of the retaining portion 32). The nozzle 62 can be configured to eject cooling gas toward the center of the retaining portion 32. For example, the ejection direction of the cooling gas from the nozzle 62 intersects the axis Ax inside the retaining portion 32. The nozzle 62 is connected to a gas source 64 via a conduit 68. The gas source 64 supplies cooling gas toward the nozzle 62. A valve 66 is provided in the conduit 68. The valve 66, for example, is a pneumatic valve used to adjust the opening degree within the conduit 68. By controlling the conduit 68, it is possible to switch between a state where cooling gas is ejected from the nozzle 62 and a state where cooling gas is not ejected from the nozzle 62.

[0114] Similar to the liquid treatment unit U1 of the first embodiment, the liquid treatment unit U10 is also controlled by the control device 100. The control unit 104 of the control device 100 causes the liquid treatment unit U10 to perform a temperature adjustment process, which is a process of adjusting the temperature of the holding section 32 that affects the temperature of the workpiece W during liquid treatment. When performing the temperature adjustment process, the control unit 104 supplies a first fluid (cooling solvent and cooling gas) to the holding section 32 via, for example, the solvent supply unit 50 and the gas supply unit 60, thereby lowering the temperature of the holding section 32 (cooling the holding section 32). In this case, the temperature of the holding section 32 after the temperature adjustment process is performed is lower than the temperature of the holding section 32 when the temperature adjustment process is not performed. In one example, when performing the above-described liquid treatment on each of a plurality of workpieces W, the control unit 104 causes the liquid treatment unit U10 to perform a temperature adjustment process once before performing multiple liquid treatments on the plurality of workpieces W.

[0115] Next, refer to Figure 11 and Figure 12 This will illustrate an example of a series of processes including liquid treatment and temperature control processes performed in the liquid treatment unit U10 according to the second embodiment. Figure 11 This is a flowchart illustrating a series of processes performed sequentially on multiple workpieces W within a liquid treatment unit U10. The temperature within the liquid treatment unit U10 (the temperature surrounding the treatment location) can be adjusted to a predetermined set temperature before performing this series of processes.

[0116] The control unit 104 of the control device 100 first causes the liquid treatment unit U10 to perform a temperature adjustment process (step S31) to cool the holding unit 32. For example, the control unit 104 controls the liquid treatment unit U10 to cool the holding unit 32 by supplying a first fluid to it. In one example, the control unit 104 supplies cooling solvent and cooling gas to the holding unit 32 via the solvent supply unit 50 and the gas supply unit 60 to bring the temperature of the holding unit 32 close to the target temperature. The target temperature of the holding unit 32 is preset to a value lower than the aforementioned set temperature. Specific examples of the temperature adjustment process in step S31 will be described later.

[0117] Next, the control unit 104 controls the conveying device A3 and the liquid treatment unit U10 to move the first workpiece W, which is to be processed, into the liquid treatment unit U10 (step S32). For example, with Figure 5 Step S32 is performed in the same manner as step S01 shown. Before the workpiece W to be processed is placed into the liquid treatment unit U10, the temperature of the workpiece W to be processed can be adjusted to a predetermined set temperature by the temperature control unit provided in the coating and developing apparatus 2.

[0118] Next, the control unit 104 controls the liquid treatment unit U10 to perform liquid treatment on the workpiece W held in the treatment position by the holding unit 32 (step S33). For example, with Figure 5 and Figure 6 The same procedure as step S32 is performed on step S02 shown.

[0119] Next, the control unit 104 controls the conveying device A3 and the liquid treatment unit U10 to remove the liquid-treated workpiece W from the liquid treatment unit U10 (step S34). For example, with Figure 5 Step S34 is performed in the same manner as step S03 shown. Next, the control unit 104 determines whether the processing of the predetermined number of workpieces W has been completed (step S35). In step S35, if it is determined that the processing of the predetermined number of workpieces W has not been completed (step S35: "No"), the control unit 104 repeats the processing of steps S32 to S35.

[0120] On the other hand, in step S35, if it is determined that the processing of the set number of workpieces W has been completed (step S35: "Yes"), the control unit 104 ends a series of processes including liquid treatment and temperature control for the set number of workpieces W. As described above, unlike the first embodiment, the temperature control process (cooling of the holding unit 32) in step S31 is performed before the liquid treatment of multiple workpieces W is performed.

[0121] Figure 12 This is a flowchart illustrating an example of the temperature adjustment process in step S31. In the temperature adjustment process of step S31, firstly, the control unit 104 controls the rotating holding unit 30 to start rotating the holding unit 32, which is not holding the workpiece W (step S41). For example, the control unit 104 controls the rotating holding unit 30 to rotate the holding unit 32 at a predetermined fourth rotational speed. The fourth rotational speed can be a speed equal to or less than the first rotational speed during the supply (ejection) of the treatment liquid included in the liquid treatment of step S33. The fourth rotational speed can also be equal to or less than the second rotational speed during the film formation of the treatment liquid included in the liquid treatment of step S33.

[0122] Next, the control unit 104 controls the liquid treatment unit U10 to begin supplying the first fluid to the holding unit 32 (step S42). For example, the control unit 104 causes the solvent supply unit 50 to begin spraying the cooling solvent included in the first fluid toward the holding unit 32, and causes the gas supply unit 60 to begin spraying the cooling gas included in the first fluid toward the holding unit 32. In one example, the control unit 104 switches the valve 56 of the solvent supply unit 50 from a closed state to an open state, and switches the valve 66 of the gas supply unit 60 from a closed state to an open state, thereby causing the solvent supply unit 50 and the gas supply unit 60 to begin spraying the cooling solvent and cooling gas, respectively.

[0123] Next, the control unit 104 enters standby mode until a predetermined supply time has elapsed since the first fluid was supplied (step S43). The supply time is set to the degree to which the cooling of the holding unit 32 progresses by supplying the first fluid, for example, it is set to several seconds or tens of seconds.

[0124] Next, the control unit 104 controls the liquid treatment unit U10 to stop supplying the first fluid to the holding unit 32 (step S44). For example, the control unit 104 switches valve 56 from the open state to the closed state and valve 66 from the open state to the closed state, thereby stopping the solvent supply unit 50 and the gas supply unit 60 from spraying cooling solvent and cooling gas, respectively. During the process of supplying the first fluid to the holding unit 32, cooling solvent from the nozzle 52 of the solvent supply unit 50 can be sprayed toward the center of the holding unit 32, and cooling gas from the nozzle 62 of the gas supply unit 60 can be sprayed toward the center of the holding unit 32.

[0125] Next, the control unit 104 enters standby mode after stopping the supply of the first fluid until a predetermined cooling time has elapsed (step S45). The cooling time is set to the extent that the cooling solvent supplied to the holding unit 32 is sufficiently evaporated (dried), for example, it is set to several seconds or tens of seconds. This cooling time can be less than or longer than the supply time in step S43. During the cooling period from the stopping of the supply of the first fluid until the cooling time has elapsed, the cooling of the holding unit 32 is further advanced due to the heat of vaporization generated along with the evaporation of the cooling solvent.

[0126] Next, the control unit 104 determines whether the first fluid has been supplied a predetermined number of times (step S46). In step S46, if it is determined that the predetermined number of supplies has not been completed (step S46: "No"), the control unit 104 repeats steps S42 to S46. The predetermined number of times indicates the number of times the cooling process, including the supply of the first fluid and the cooling period after the supply, is repeated, and is set to a level that can cool the temperature of the holding unit 32 to a target temperature. Multiple cooling processes can be performed, or a single cooling process can be performed (step S46 can be omitted).

[0127] On the other hand, in step S46, if it is determined that the set number of supplies has been completed (step S46: "Yes"), the control unit 104 controls the rotating holding unit 30 to stop the holding unit 32 from rotating (step S47). Through the above process, the temperature adjustment process of step S31 for cooling the holding unit 32 is completed. As described above, the processing conditions for the temperature adjustment process of step S31 can be preset. The processing conditions for the temperature adjustment process include the supply time of the first fluid, the standby cooling time after the first fluid is supplied, the set number of supplies, and the start timing of the temperature adjustment process.

[0128] Unlike the example above, the control unit 104 can set at least a portion of the processing conditions in the temperature control process of step S31 based on the start timing of the initial liquid treatment in step S32, which follows the temperature control process. For example, the control unit 104 can determine the start timing of the temperature control process based on the start timing of the initial liquid treatment in step S32, or it can determine at least a portion of the processing conditions other than the start timing. In one example, the control unit 104 can determine the start timing of the temperature control process in step S32 based on the start timing of the initial liquid treatment in step S32, in a way that the temperature of the holding unit 32 is close to the target temperature (included in the target range). The control unit 104 can obtain information related to the start timing of the liquid treatment of the first workpiece W (the loading timing of the workpiece W) before the temperature control process begins, based on the condition of the first workpiece W before liquid treatment, etc.

[0129] Alternatively, if the start timing of the temperature conditioning process has already been determined, the control unit 104 can also determine the supply conditions (supply time, cooling time, and number of settings, etc.) related to the supply of the first fluid in the processing conditions in a way that brings the temperature of the holding unit 32 close to the target temperature. In this case, the control unit 104 can set the processing conditions such as bringing the temperature of the holding unit 32 close to the target temperature based on the time between the start timing of the temperature conditioning process and the start timing of the initial liquid treatment following the temperature conditioning process (the time when the first workpiece W is loaded). The target temperature of the holding unit 32 can be preset to a value lower than the set temperature of the workpiece W before processing (the set temperature within the liquid treatment unit U10).

[0130] In the above example, a temperature-regulating process for cooling the holding section 32 is performed before multiple liquid treatments. However, a temperature-regulating process for cooling the holding section 32 can also be performed for each liquid treatment before that treatment. Either a cooling solvent or a cooling gas can be supplied to the holding section 32. In this case, the liquid treatment unit U10 may not have either a solvent supply section 50 or a gas supply section 60. In the above example, cooling solvent or the like is supplied to the central portion of the shaft 36 of the holding section 32 and the mounting section 33. However, cooling solvent or the like can also be supplied to either the central portion of the holding section 32 or the central portion of the shaft 36 and the mounting section 33.

[0131] (Effects of the second implementation method)

[0132] Similar to the first embodiment, in the substrate processing method performed in the liquid processing unit U10 according to the second embodiment, liquid processing can be performed in a state where the temperature deviation around the processing position between each liquid processing is reduced by temperature adjustment. Therefore, film thickness variation between workpieces W can be suppressed.

[0133] As a temperature-affecting component, a holding portion 32 that supports the back surface Wb of the workpiece W in a manner that holds the workpiece W in the processing position can be listed. In the substrate processing method according to the second embodiment, the temperature control process includes cooling the holding portion 32 by supplying a first fluid to it. In this case, the holding portion 32, which affects the temperature of the workpiece W, is cooled before liquid processing, so the degree to which the ambient temperature of the processing position decreases with the execution of liquid processing is reduced. Therefore, the temperature deviation of the processing position between each liquid processing is reduced, thereby suppressing film thickness variations between workpieces W.

[0134] In the substrate processing method according to the second embodiment, supplying a processing liquid to the surface Wa of the workpiece W includes supplying the processing liquid to the surface Wa of the workpiece W while rotating the holding portion 32, which is in a state supporting the workpiece W, via a rotation drive 34 connected to the holding portion 32. Supplying a first fluid to the holding portion 32 includes supplying a first fluid to the central portion of the holding portion 32. The central portion of the holding portion 32 is located near the rotation drive 34 used to rotate the holding portion 32, and the heat capacity of this central portion tends to be larger than that of other portions. Therefore, by cooling the central portion of the holding portion 32, the degree of temperature regulation achieved through the temperature control process can be increased.

[0135] Here, refer to Figure 13 (a)~ Figure 13 (c) will further illustrate the effects of the substrate processing method according to the second embodiment. Figure 13 (a)~ Figure 13(c) shows the measurement results of the coating at the central part of the coating on the surface Wa of workpiece W. Regarding Figure 13 (a)~ Figure 13 The film thickness measurement shown in (c) is related to, except for the temperature control process, etc. Figure 8 The film thickness was measured in the same manner. Figure 13 (a) shows the film thickness measurement results of the comparative example in which the temperature adjustment treatment of step S31 was not performed. Figure 13 (b) shows that the execution was performed Figure 11 The temperature adjustment process shown in step S31 and Figure 12 The set number of times in step S46 shown is the result of the film thickness measurement in the first case. Figure 13 (c) represents the film thickness measurement result when the temperature adjustment process in step S31 was performed and the number of times in step S46 was set to five.

[0136] Figure 13 The slope (absolute value) of the approximate straight line representing the degree of film thickness variation in the measurement results of (b) is compared to Figure 13 The slope (absolute value) of the approximate straight line in the measurement results involved in Comparative Example (a) is reduced to about 2 / 3. Figure 13 The slope (absolute value) of the approximate straight line in the measurement result of (c) compared to Figure 13 In the comparative example (a), the slope (absolute value) of the approximate straight line in the measurement results is reduced to about 1 / 4. As mentioned above, according to Figure 13 (a)~ Figure 13 The measurement results in (c) show that the film thickness variation was suppressed by performing the temperature adjustment process in step S31. Furthermore, by increasing the supply of the first fluid and the number of repetitions of the standby cooling cycle, the film thickness variation was further suppressed.

[0137] [Third Implementation Method]

[0138] In the temperature control processes described in the first and second embodiments above, the temperature of the holding portion 32 (temperature-affecting member) in contact with the workpiece W is adjusted. However, in order to reduce the film thickness deviation between liquid treatments of the workpiece W, the temperature-affecting member disposed close to the workpiece W can also be temperature-controlled. The coating and developing apparatus 2 (processing module 12) of the substrate processing system according to the third embodiment includes a liquid treatment unit U20 instead of the liquid treatment unit U1. Figure 14 The liquid processing unit U20 according to the third embodiment is shown in the figure. For example... Figure 14 As shown, the liquid processing unit U20 includes, for example, a rotating holding part 30, a processing liquid supply part 40, and a receiving part 70.

[0139] The receiving section 70 surrounds the workpiece W, which is held in the processing position by the holding section 32. The receiving section 70 is disposed around the rotating holding section 30. The receiving section 70 functions as a collection container for receiving a portion of the liquid supplied to the workpiece W during liquid processing (processing liquid, etc., that is thrown out of the workpiece W). The receiving section 70 includes, for example, a bottom wall 72, an outer peripheral wall 74, an inner peripheral wall 76, partition walls 78 and 80, an inner cup 82, a drain pipe 84, and an exhaust pipe 86.

[0140] The bottom wall 72 is formed in an annular shape to surround the rotating retainer 30. The outer peripheral wall 74 is formed in a cylindrical shape to surround the inner peripheral wall 76 and the inner cup 82. The outer peripheral wall 74 extends vertically upward from the outer periphery of the bottom wall 72. The outer peripheral wall 74 is located further outward than the periphery of the workpiece W held by the retainer 32. Therefore, the outer peripheral wall 74 is used to prevent the splashing of processing fluid from the workpiece W rotating through the rotating retainer 30.

[0141] The inner peripheral wall 76 is formed in a cylindrical shape to surround the rotating retaining part 30. The inner peripheral wall 76 extends vertically upward from the inner peripheral edge of the bottom wall 72. The inner peripheral wall 76 is located further inward than the periphery of the workpiece W held by the retaining part 32. The upper end 76a of the inner peripheral wall 76 is closed by a partition wall 78. A through hole is provided in the center of the partition wall 78, and the shaft 36 passes through the through hole.

[0142] The partition wall 80 is formed in a cylindrical shape. The partition wall 80 is located between the outer peripheral wall 74 and the inner peripheral wall 76, and extends vertically upward from the bottom wall 72. In this way, the partition wall 80 surrounds the inner peripheral wall 76. The upper end of the partition wall 80 is separated from the inner cup 82 located above the partition wall 80.

[0143] The inner cup 82 is formed in a cylindrical (annular) shape. The inner cup 82 is mounted to the upper end 76a of the inner peripheral wall 76, extending further outward than the partition wall 78. The upper surface of the inner cup 82 is formed in an umbrella-shaped (mountain-shaped) projection upward. The upper surface of the inner cup 82 includes an inclined surface S that slopes downward radially outward along the axis Ax of the rotating retainer 30. The inclined surface S faces the outer periphery of the back surface Wb of the workpiece W held by the retainer 32 in the vertical direction. When viewing the surface Wa of the workpiece W from the direction along the axis Ax, at least a portion of the outer periphery of the workpiece W overlaps with the inclined surface S. When viewing the surface Wa of the workpiece W from the direction along the axis Ax, the central region of the workpiece W does not overlap with the inner cup 82, but the outer periphery of the workpiece W (the region other than the central region) overlaps with the inner cup 82. Furthermore, it can be said that as the axis Ax of the holding part 32 moves radially outward, the shortest distance between the upper surface of the inner cup 82 and the back surface of the workpiece W held by the holding part 32 becomes shorter.

[0144] The inner cup 82 is configured to be close to the state in which the workpiece W is held in the processing position by the holding part 32. For example... Figure 14 As illustrated, the inner cup 82 can also be configured close to the outer periphery of the back surface Wb of the workpiece W held in the processing position by the holding part 32. In this case, the distance between the inner cup 82 and the central region of the back surface Wb of the workpiece W is greater than the distance between the inner cup 82 and the outer periphery of the back surface Wb of the workpiece W. The upper surface of the inner cup 82 is close enough to the workpiece W in the processing position to affect the temperature of the workpiece W. For example, the distance (minimum distance) between the inner cup 82 and the workpiece W in the processing position is about a few millimeters. As described above, the inner cup 82 is a temperature-influencing member that affects the temperature of the workpiece W during liquid treatment.

[0145] The drain pipe 84 is connected to the liquid discharge hole 72a formed between the outer peripheral wall 74 and the partition wall 80 in the bottom wall 72. Liquid that is thrown to the outside from the surface Wa of the workpiece W flows through the path CH between the outer peripheral wall 74 or the bottom wall 186 (described later) and the inclined surface S of the inner cup 82 and is guided to the space between the outer peripheral wall 74 and the partition wall 80, thereby being discharged to the outside of the receiving part 70 through the liquid discharge hole 72a and the drain pipe 84.

[0146] The exhaust pipe 86 is connected to a gas discharge hole 72b formed in the bottom wall 72 between the inner peripheral wall 76 and the partition wall 80. By venting gas into the receiving portion 70 via the exhaust pipe 86, a downward flow is generated around the workpiece W. This downward flow flows through path CH, between the upper end of the partition wall 80 and the inner cup 82, and is guided to the space between the inner peripheral wall 76 and the partition wall 80, whereby it is discharged to the outside of the receiving portion 70 through the gas discharge hole 72b and the exhaust pipe 86.

[0147] The liquid processing unit U20 cools the inner cup 82 of the housing 70 by supplying fluid to it. The fluid supplied to the inner cup 82 (hereinafter referred to as the "second fluid") can be either a solvent or a gas, as long as it can cool the inner cup 82, and can be any type of solvent or gas. For example, the liquid processing unit U20 also has a solvent supply unit 90.

[0148] The solvent supply unit 90 supplies the inner cup 82 with a solvent capable of cooling the inner cup 82 (hereinafter referred to as "cooling solvent"). The cooling solvent supplied by the solvent supply unit 90 includes, for example, a diluent. The solvent supply unit 90 can supply the cooling solvent to the inclined surface S in the inner cup 82. The solvent supply unit 90 includes, for example, an ejection member 180, a can 92, and a valve 94.

[0149] The ejector component 180 ejects cooling solvent toward the inner cup 82. Details of the ejector component 180 are described later. The ejector component 180 is connected to the tank 92 via a conduit 96. The tank 92 contains cooling solvent and is used to supply cooling solvent to the ejector component 180. A valve 94 is provided in the conduit 96. The valve 94, for example, is a pneumatic valve, used to regulate the opening within the conduit 96. By controlling the valve 94, it is possible to switch between a state where cooling solvent is ejected from the ejector component 180 and a state where cooling solvent is not ejected from the ejector component 180.

[0150] The ejector member 180 is located above the receiving portion 70 (outer peripheral wall 74). The ejector member 180 is formed to surround the periphery of the workpiece W held by the holding portion 32. The ejector member 180 may be formed in a cylindrical shape, or in a generally C-shaped (arc-shaped) shape. In this way, the ejector member 180 may surround the entire periphery of the workpiece W held by the holding portion 32, or it may partially surround the periphery of the workpiece W held by the holding portion 32. The ejector member 180 includes, for example, an outer peripheral wall 182, an inner peripheral wall 184, a bottom wall 186, and a top wall 188.

[0151] The outer peripheral wall 182 is formed to surround the inner peripheral wall 184, the bottom wall 186, and the top wall 188. The outer peripheral wall 182 may also be formed as a cylinder extending vertically. The lower end of the outer peripheral wall 182 is connected to the upper end of the outer peripheral wall 74. The outer peripheral wall 182 may be integrally formed with the outer peripheral wall 74 (part of the receiving portion 70) or separately formed from it. The inner peripheral wall 184 is formed to surround the periphery of the workpiece W held by the holding portion 32. The inner peripheral wall 184 may also be formed as a cylinder extending vertically.

[0152] The bottom wall 186 can be formed by connecting the outer peripheral wall 182 and the inner peripheral wall 184. The bottom wall 186 can be inclined upwards as it moves from the outer peripheral wall 182 to the inner peripheral wall 184. The bottom wall 186 can be formed in an annular shape. The bottom wall 186 can be integrally formed with the outer peripheral wall 182 and the inner peripheral wall 184, or it can be separately formed from the outer peripheral wall 182 and the inner peripheral wall 184.

[0153] The top wall 188 can be formed by connecting the outer peripheral wall 182 and the inner peripheral wall 184. The top wall 188 is located above the bottom wall 186. The top wall 188 can be formed in a ring shape, and the top wall 188 can be integrally formed with the outer peripheral wall 182 and the inner peripheral wall 184, or it can be separately formed from the outer peripheral wall 182 and the inner peripheral wall 184.

[0154] The space defined by the outer peripheral wall 182, inner peripheral wall 184, bottom wall 186, and top wall 188 functions as a storage chamber V for storing cooling solvent. When the ejector component 180 is integrally annular, the storage chamber V is also annular. An inlet hole 192 is formed through the outer peripheral wall 182 to connect the storage chamber V to the space outside the ejector component 180. Cooling solvent supplied from the tank 92 is introduced into the storage chamber V through the inlet hole 192. The inlet hole 192 can be formed to extend horizontally.

[0155] A plurality of dripping holes 194 are formed on the bottom wall 186 in such a way that the space (path CH) between the ejector member 180 and the workpiece W is connected to the storage chamber V. The plurality of dripping holes 194 can extend vertically through the bottom wall 186. The plurality of dripping holes 194 are located, for example, vertically above the inclined surface S of the inner cup 82. The plurality of dripping holes 194 are arranged circumferentially around the axis Ax. The plurality of dripping holes 194 can be arranged approximately at equal intervals circumferentially. Cooling solvent flowing into the storage chamber V through the inlet hole 192 drips downward through the plurality of dripping holes 194. Thus, cooling solvent is ejected onto the inclined surface S of the inner cup 82.

[0156] Similar to the liquid treatment unit U1 in the first embodiment, the liquid treatment unit U20 is also controlled by the control device 100. The control unit 104 of the control device 100 causes the liquid treatment unit U20 to perform a temperature adjustment process that regulates the temperature of the inner cup 82, which affects the temperature of the workpiece W during liquid treatment. When performing the temperature adjustment process, the control unit 104 lowers the temperature of the inner cup 82, for example, by supplying a second fluid (cooling solvent) to the inner cup 82 through the solvent supply unit 90. In this case, the temperature of the inner cup 82 after the temperature adjustment process is performed is lower than the temperature of the inner cup 82 when the temperature adjustment process is not performed. In one example, when the control unit 104 performs the above-mentioned liquid treatment on each of a plurality of workpieces W, it performs the temperature adjustment process before performing multiple liquid treatments on the plurality of workpieces W. Alternatively, the control unit 104 may also cause the liquid treatment unit U20 to perform the temperature adjustment process periodically.

[0157] Next, refer to Figures 15-17 This is an example of a series of processes including liquid treatment and temperature control processes performed in the liquid treatment unit U20 involved in the third embodiment. Figure 15 This is a flowchart illustrating a series of processes performed sequentially on multiple workpieces W within a liquid treatment unit U20. The temperature within the liquid treatment unit U20 can be adjusted to a predetermined set temperature before performing this series of processes.

[0158] The control unit 104 of the control device 100 first acquires the timing for moving the first workpiece W, which is to be processed, into the liquid treatment unit U20 (step S51). The control unit 104 determines the timing for moving the workpiece W into the liquid treatment unit U20, for example, based on the condition of the workpiece W before liquid treatment and the operating status of the conveying device A3 that transports the workpiece W to the liquid treatment unit U20. Once the timing for moving the workpiece W into the liquid treatment unit U20 is determined, the start timing for the liquid treatment performed after the workpiece W is moved in is determined.

[0159] Next, the control unit 104 enters standby mode until the cooling start time is reached (step S52). For example, the cooling start time is set according to the workpiece W's loading time so that the temperature of the inner cup 82 reaches the target temperature when the workpiece W is loaded into the liquid treatment unit U20. In one example, the cooling start time is set before a predetermined time from the loading time of the workpiece W into the liquid treatment unit U20. In this case, liquid treatment by the liquid treatment unit U20 begins within a predetermined time from when the inner cup 82 is cooled to the target temperature by supplying a second fluid (cooling solvent) to the inner cup 82. The cooling start time will be described later.

[0160] Next, the control unit 104 causes the liquid treatment unit U20 to perform a temperature adjustment process to cool the inner cup 82 (step S53). For example, the control unit 104 controls the liquid treatment unit U20 to cool the inner cup 82 by supplying a second fluid to the inner cup 82. In one example, the control unit 104 supplies cooling solvent to the inner cup 82 through the solvent supply unit 90 to bring the temperature of the inner cup 82 to the target temperature. Specific examples of the temperature adjustment process in step S53 will be described later.

[0161] Next, the control unit 104 enters standby mode until the transfer timing is reached (step S54). Before the transfer timing, the temperature of the workpiece W to be processed can also be adjusted to a predetermined set temperature. Next, the control unit 104 controls the conveying device A3 and the liquid treatment unit U20 to transfer the workpiece W into the liquid treatment unit U20 (step S55). For example, with... Figure 5 The same procedure as step S01 is followed in step S55.

[0162] Next, the control unit 104 controls the liquid treatment unit U20 to perform liquid treatment on the workpiece W held in the treatment position by the holding unit 32 (step S56). For example, with Figure 5 and Figure 6 Step S56 is performed in the same manner as step S02 shown. Next, the control unit 104 controls the conveying device A3 and the liquid treatment unit U20 to remove the liquid-treated workpiece W from the liquid treatment unit U20 (step S57). For example, with... Figure 5 Step S03 shown is performed in the same way as step S57.

[0163] Next, the control unit 104 determines whether the processing of the predetermined set number of workpieces W has been completed (step S58). In step S58, if it is determined that the processing of the set number of workpieces W has not been completed (step S58: "No"), the control unit 104 repeats the processing of steps S54 to S58. On the other hand, in step S58, if it is determined that the processing of the set number of workpieces W has been completed (step S58: "Yes"), the control unit 104 ends the series of processes performed on the set number of workpieces W, including liquid processing and temperature adjustment processing. As described above, unlike the first embodiment, the temperature adjustment processing (cooling of the inner cup 82) in step S53 is performed before performing a series of processes on multiple workpieces W.

[0164] Figure 16 This is a flowchart illustrating an example of the temperature control process in step S53. In the temperature control process of step S53, firstly, the control unit 104 controls the liquid treatment unit U20 to begin supplying the second fluid to the inner cup 82 (step S61). For example, the control unit 104 causes the solvent supply unit 90 to begin spraying the cooling solvent included in the second fluid toward the inner cup 82. In one example, the control unit 104 causes the solvent supply unit 90 to begin spraying the cooling solvent from multiple drip holes 194 by switching the valve 94 of the solvent supply unit 90 from a closed state to an open state.

[0165] Next, the control unit 104 remains on standby from the start of supplying the second fluid until a predetermined supply time has elapsed (step S62). The supply time is set to supply the amount of second fluid required to cool the inner cup 82, for example, a few seconds or tens of seconds. Then, the control unit 104 controls the solvent supply unit 90 to stop supplying the second fluid to the inner cup 82 (step S63). For example, the control unit 104 stops the solvent supply unit 90 from spraying cooling solvent by switching the valve 94 from the open state to the closed state. The supply of cooling solvent is performed while the holding unit 32 is not holding the workpiece W. Therefore, it is possible to suppress the direct impact of supplying cooling solvent to the inner cup 82 on the temperature of the workpiece W.

[0166] Next, the control unit 104 enters standby mode after stopping the supply of the second fluid until a predetermined cooling time has elapsed (step S64). This maintains the state of not supplying the inner cup 82 with the second fluid for the cooling time. The cooling time is set to allow the cooling solvent supplied to the inner cup 82 to evaporate (dry) sufficiently, for example, set to several seconds or tens of seconds. This cooling time can be less than or longer than the supply time in step S62. During the period from stopping the supply of the second fluid until the cooling time has elapsed, the cooling of the inner cup 82 further progresses due to the heat of vaporization generated accompanying the evaporation of the cooling solvent.

[0167] Next, the control unit 104 determines whether the second fluid has been supplied a predetermined number of times (step S65). In step S65, if it is determined that the predetermined number of supplies has not been completed (step S65: "No"), the control unit 104 repeats steps S61 to S65. The predetermined number of times indicates the number of times the cooling process, including the supply of the second fluid and subsequent cooling, is repeated. For example, the predetermined number of times is set to cool the temperature of the inner cup 82 to a target temperature. In the temperature adjustment process of step S53, multiple cooling processes can be performed, or a single cooling process can be performed (step S65 can be omitted). As described above, the processing conditions for the temperature adjustment process in step S53 can be predetermined. The processing conditions for the temperature adjustment process include the supply time of the second fluid, the standby cooling time after the supply of the second fluid, the aforementioned predetermined number of times, and the start timing of the temperature adjustment process.

[0168] The control unit 104 can set at least a portion of the processing conditions in the temperature control process based on the timing of the initial workpiece W being moved in after the temperature control process in step S53 (the start timing of the initial liquid treatment). For example, the control unit 104 can set at least a portion of the processing conditions in the temperature control process based on the timing of the initial workpiece W being moved in after the temperature control process in step S53 (the start timing of the initial liquid treatment). Figure 15 The initial liquid treatment start timing in step S56, as shown, determines the supply time in step S62, the cooling time in step S64, and the number of times to set steps S65 in order to bring the temperature of the inner cup 82 close to the target temperature (within the target range). The control unit 104 can set the start timing of the temperature adjustment process in step S53, i.e., the cooling start timing in step S52, based on the loading timing of the first workpiece W (the initial liquid treatment start timing).

[0169] Here, refer to Figure 17 This is an example of how to set the cooling start timer. Figure 17 This is a graph showing the temperature of the inner cup 82 changing over time due to the supply of cooling solvent from the solvent supply section 90. The horizontal axis represents time, and the vertical axis represents the temperature of the inner cup. Figure 17 In the temperature-time curve shown, at time t1, the supply of cooling solvent from the solvent supply unit 90 is stopped. Before time t1, the temperature of the inner cup 82 is approximately the same as the set temperature Ts within the liquid processing unit U20. After time t1, the temperature of the inner cup 82 gradually decreases due to the heat of vaporization of the cooling solvent. Then, at time t2, the temperature of the inner cup 82 is below the target temperature Ta. Afterward, the temperature of the inner cup 82 drops to a minimum temperature and then gradually rises. The temperature of the inner cup 82 exceeds the target temperature Ta at time t3 and then rises further.

[0170] exist Figure 17In the temperature change of the inner cup 82 shown, the time from time t1 to time t2 is the temperature drop time from the completion of the supply of cooling solvent until the temperature drops to the target temperature Ta. The time from time t2 to time t3 is the state maintenance time for maintaining the temperature of the inner cup 82 below the target temperature Ta. The storage unit 102 can store these temperature drop times and state maintenance times. The control unit 104 can determine the cooling start time in such a way that the timing of the workpiece W being moved in (the start time of liquid treatment) is included in the state maintenance time. In one example, the control unit 104 can determine the cooling start time in such a way that the time from the cessation of the supply of cooling solvent in the last step S63 to the timing of the workpiece W being moved in is greater than the temperature drop time and less than the total time of the temperature drop time and the state maintenance time. In this case, the control unit 104 causes the liquid treatment of step S56 to begin within a predetermined time (the state maintenance time) from the time the inner cup 82 is cooled to the target temperature Ta. The control unit 104 can determine the supply time of step S62, the cooling time of step S64, and the number of times when determining the cooling start time, or it can predetermine these processing conditions (supply time, cooling time, and number of times).

[0171] In the above example, a temperature-regulating process for cooling the inner cup 82 is performed before multiple liquid treatments. However, a temperature-regulating process for cooling the inner cup 82 can also be performed for each liquid treatment before that treatment. During the temperature-regulating process for cooling the inner cup 82, a cooling gas (second fluid) can be supplied to the inner cup 82 in addition to the cooling solvent, or a cooling gas (second fluid) can be supplied to the inner cup 82 instead of the cooling solvent. In this case, the liquid treatment unit U20 can also have a gas supply unit for supplying cooling gas to the inner cup 82. This gas supply unit can supply cooling gas to the inner cup 82 via the ejection member 180 (storage chamber V). The cooling gas ejected from the ejection member 180 (storage chamber V) passes through path CH and is guided to the exhaust pipe 86, thus cooling the inner cup 82. Alternatively, cooling gas can be supplied to the inner cup 82 from other nozzles instead of the ejection member 180.

[0172] The control unit 104 can enable the liquid treatment unit U20 to perform a series of processes including liquid treatment and temperature control in a manner that allows for periodic (e.g., at a predetermined cycle) temperature control. Figure 18 This is a flowchart illustrating another example of a series of processes, including liquid treatment and temperature control, performed in the liquid treatment unit U20 according to the third embodiment.

[0173] The control unit 104 first causes the liquid treatment unit U20 to perform a temperature adjustment process for cooling the inner cup 82 (step S81). The temperature adjustment process in step S81 is, for example, similar to... Figure 15 and Figure 16Step S53 shown is performed in the same manner. Next, the control unit 104 determines whether to perform liquid treatment in the liquid treatment unit U20 (step S82). For example, the control unit 104 determines whether to perform liquid treatment based on the condition of the workpiece W to be treated before liquid treatment and the operation status of the conveying device A3 that transports the workpiece W to the liquid treatment unit U20.

[0174] In step S82, if it is determined that liquid processing is to be performed (step S82: "Yes"), the control unit 104 and Figure 15 Step S55, as shown, similarly controls the liquid treatment unit U20 and the conveying device A3 to move the workpiece W, which is to be processed, into the liquid treatment unit U20 (step S83). Next, the control unit 104 and... Figure 15 and Figure 16 The step S56 shown similarly causes the liquid treatment unit U20 to perform liquid treatment on the workpiece W, which is the object of treatment (step S84). Next, the control unit 104 and... Figure 15 The step S57 shown also controls the liquid treatment unit U20 and the conveying device A3 to move the workpiece W, which is to be processed, out of the liquid treatment unit U20 (step S85).

[0175] On the other hand, if it is determined in step S82 that liquid treatment will not be performed (step S82: "No"), the control unit 104 does not execute steps S83 to S85. If it is determined in step S82 that liquid treatment will not be performed, or after step S85, the control unit 104 determines whether it is a cooling start timing (step S86). For example, the control unit 104 determines whether a predetermined standby time has elapsed since a reference time. For example, after performing temperature adjustment processing, the reference time is set as the end time of that temperature adjustment processing; if liquid treatment is performed after temperature adjustment processing, the reference time is set (updated) as the end time of that liquid treatment. If the standby time has elapsed, the control unit 104 determines that it is a cooling start timing; if the standby time has not elapsed, it determines that it is not a cooling start timing.

[0176] In step S86, if it is determined that the cooling start timing is not correct, the process returns to step S82. On the other hand, in step S86, if it is determined that the cooling start timing is correct, and the reference time is reset, the process returns to step S81 (temperature adjustment processing is performed again). By performing the above series of processes, if no liquid treatment is performed after the temperature adjustment process has been performed and the standby time has elapsed, the temperature adjustment process in step S81 is performed again. In addition, if liquid treatment is performed after the temperature adjustment process and the standby time has elapsed and no next liquid treatment is performed, the temperature adjustment process in step S81 is performed again. Alternatively, regardless of whether liquid treatment is performed, the control unit 104 may cause the liquid treatment unit U20 to continuously perform temperature adjustment processing at a predetermined cycle (after a fixed period from the end of the previous temperature adjustment process).

[0177] In addition to performing temperature control to cool the inner cup 82, the control unit 104 can also supply a second fluid (e.g., a cooling solvent) to the inner cup 82 via the solvent supply unit 90 during the period between the completion of the supply of the treatment liquid and the start of removing the workpiece W from the treatment position in liquid treatment. In this case, the control unit 104 can control the solvent supply unit 90 to supply cooling solvent to the inner cup 82 when the workpiece W, which is used to form a coating of the treatment liquid, rotates after the treatment liquid is supplied. The control unit 104 can also control the solvent supply unit 90 to supply cooling solvent to the inner cup 82 during the standby period after the coating of the treatment liquid is formed (after the workpiece W stops rotating) and before the workpiece W that has undergone liquid treatment begins to be removed.

[0178] (Effects of the third implementation method)

[0179] Similar to the first and second embodiments, in the substrate processing method performed in the liquid processing unit U20 according to the third embodiment, liquid processing can be performed in a state where the temperature deviation around the processing position is reduced by temperature adjustment. Therefore, film thickness variation between workpieces W can be suppressed.

[0180] As a temperature-influencing component, an inner cup 82 can be included, which surrounds the receiving portion 70 of the workpiece W held in the processing position and is arranged close to the outer periphery of the back surface Wb of the workpiece W. In the substrate processing method described in the third embodiment, the temperature control process includes cooling the inner cup 82 by supplying a second fluid to it. In this case, the inner cup 82, which affects the temperature of the workpiece W, is cooled before liquid processing, so the degree to which the ambient temperature of the processing position decreases with the execution of liquid processing is reduced. Therefore, the temperature deviation of the processing position between each liquid processing is reduced, and thus film thickness variations between workpieces W can be suppressed.

[0181] In the substrate processing method described in the third embodiment, cooling the inner cup 82 by supplying a second fluid to the inner cup 82 includes supplying a solvent to the inner cup 82 and maintaining a state where no solvent is supplied to the inner cup 82 after the solvent is supplied. In this case, due to the heat of vaporization of the solvent supplied to the inner cup 82, the cooling of the inner cup is advanced, thus enabling the inner cup 82 to be cooled while suppressing the amount of solvent used.

[0182] In the substrate processing method described in the third embodiment, liquid processing begins within a predetermined time period from when the inner cup 82 is cooled to a target temperature Ta by supplying a second fluid to the inner cup 82. In this case, liquid processing can begin when the ambient temperature at the processing location drops to the same level as the target temperature Ta.

[0183] The substrate processing method described in the third embodiment may further include: removing the workpiece W from the processing position after liquid processing; and supplying a second fluid to the inner cup 82 during the period from the completion of supplying the processing liquid to the surface Wa of the workpiece W until the workpiece W is removed from the processing position. In this case, it is possible to suppress temperature deviations in the inner cup 82 after liquid processing between each liquid processing step.

[0184] Here, refer to Figure 19 (a) and Figure 19 (b) will further illustrate the effect of the substrate processing method involved in the third embodiment. Figure 19 (a) and Figure 19 (b) shows the measurement results of the film thickness at the central and outer periphery of the coating on the surface Wa of workpiece W. Regarding Figure 19 (a) and Figure 19 The measurement of the film thickness in the central part of (b) is related to, in addition to the method of temperature control, the procedure for temperature adjustment. Figure 8 The film thickness measurement was performed in the same manner. The outer periphery of the coating, one of the objects of film thickness measurement, corresponds to the portion of the workpiece W facing the inner cup 82, and also corresponds to the area extending from approximately half the radius of the workpiece W to its outer edge. The film thickness at multiple locations within the outer periphery was measured, and the average value was calculated as the film thickness of the outer periphery. Figure 19 (a) and Figure 19 (b) shows the measurement results of the film thickness of the first, third and fifth workpieces W, and an approximate straight line based on the measurement results of the film thickness. Figure 19 (a) shows the film thickness measurement results of the comparative example in which the temperature adjustment process of step S53 was not performed. Figure 19 (b) indicates that the execution was performed. Figure 15 The results of film thickness measurements under a series of treatment conditions are shown.

[0185] Compare the measurement results of the central part of the film in the two figures. Figure 19 The slope (absolute value) of the approximate straight line representing the degree of film thickness variation in the central region in the measurement results of (b) is compared to Figure 19 In (a), the slope (absolute value) of the approximate straight line representing the degree of film thickness variation at the central portion in the measurement results decreases slightly. Comparing the measurement results for the outer periphery of the film in both figures... Figure 19 The slope (absolute value) of the approximate straight line representing the degree of film thickness variation at the periphery in the measurement results of (b) decreases to Figure 19 The slope (absolute value) of the approximate straight line representing the degree of film thickness variation at the periphery in (a) is about 1 / 3. As mentioned above, according to Figure 19 (a) and Figure 19 The measurement results of (b) show that the film thickness variation in the outer periphery was suppressed by performing the temperature adjustment treatment in step S53.

[0186] [Variation Example]

[0187] It should be considered that the disclosure in this specification is illustrative in all respects and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples (first to third embodiments) without departing from the scope and spirit of the claims.

[0188] The control unit 104 can control the liquid treatment unit U1 to perform both the temperature control process for cooling the holding part 32 in the second embodiment and the temperature control process for cooling the inner cup 82 in the third embodiment before liquid treatment. The control unit 104 can cause the liquid treatment unit U1 to perform a temperature control process to raise the temperature of the inner cup 82 instead of cooling the inner cup 82. In this case, the control unit 104 can cause the liquid treatment unit U1 to perform both a temperature control process to raise the temperature of the holding part 32 by rotating it and a temperature control process to raise the temperature of the inner cup 82.

[0189] A temperature-affecting component is a component that comes into contact with or is close to the workpiece W. Furthermore, a temperature-affecting component can be any component that influences the temperature of the workpiece W during liquid treatment, and can be any component other than the holding part 32 and the inner cup 82. The above example illustrates liquid treatment for forming a coating of resist, but arbitrary temperature control can also be performed before liquid treatment for forming a coating of a treatment liquid other than resist (e.g., a coating of a treatment liquid used to form a lower or upper film).

Claims

1. A substrate processing method, comprising the following steps: Performing liquid treatment, the liquid treatment comprising using a liquid treatment unit that holds a substrate in a predetermined processing position and supplies a processing liquid to the surface of the substrate to supply the processing liquid to the surface of the substrate, and holding the substrate in a manner that allows a coating of the processing liquid to be formed on the surface of the substrate after supplying the processing liquid; and Prior to the liquid treatment, a temperature control process is performed to adjust the temperature of components in the liquid treatment unit that affect the temperature of the substrate during the liquid treatment. The component includes an inner cup, which is a receiving portion that surrounds a receiving portion of the substrate held in the processing position and is configured close to the outer periphery of the back surface of the substrate. The temperature control process includes cooling the inner cup by supplying fluid to it. The temperature control process also includes: The fluid is supplied to the inner cup from the time the processing liquid is supplied to the surface of the substrate until the substrate is removed from the processing location.

2. The substrate processing method according to claim 1, characterized in that, The processing conditions in the temperature control process are set according to the start timing of the liquid treatment.

3. The substrate processing method according to claim 1 or 2, characterized in that, The component includes a retaining portion that supports the back side of the substrate in a manner that holds the substrate in the processing position. The temperature control process includes cooling the holding part by supplying other fluids to the holding part.

4. The substrate processing method according to claim 1 or 2, characterized in that, The liquid treatment begins within a predetermined time period from when the inner cup is cooled to a target temperature by supplying the fluid to the inner cup.

5. The substrate processing method according to claim 1 or 2, characterized in that, The component includes a retaining portion that supports the back side of the substrate in a manner that holds the substrate in the processing position. Supplying the processing liquid to the surface of the substrate includes supplying the processing liquid to the surface of the substrate while rotating the holding portion that supports the substrate. The temperature control process includes increasing the temperature of the holding part by rotating the holding part in a state where the holding part is not supporting the substrate.

6. A computer-readable storage medium storing a program for causing a device to perform the substrate processing method according to any one of claims 1 to 5.

7. A substrate processing apparatus comprising: A liquid treatment unit holds a substrate in a predetermined processing position and supplies a processing liquid to the surface of the substrate; and The control unit controls the liquid treatment unit. in, The control unit causes the liquid treatment unit to perform liquid treatment, which includes supplying the treatment liquid to the surface of the substrate held at the treatment position, and holding the substrate in a manner that allows a coating of the treatment liquid to be formed on the surface of the substrate after supplying the treatment liquid. The control unit causes the liquid treatment unit to perform a temperature regulation process before the liquid treatment, wherein the temperature of the components in the liquid treatment unit that affect the temperature of the substrate during the liquid treatment is adjusted. The component includes an inner cup, which is a receiving portion that surrounds a receiving portion of the substrate held in the processing position and is configured close to the outer periphery of the back surface of the substrate. The temperature control process includes cooling the inner cup by supplying fluid to it. The temperature control process further includes supplying the fluid to the inner cup from the time the supply of the processing liquid to the surface of the substrate is completed until the substrate is removed from the processing location thereafter.

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