A method of processing a glass via
By combining a ring laser beam and an etchant, the focal plane position is adjusted to form a glass through-hole on the glass substrate, solving the problems of complex optical paths and insufficient precision in existing technologies. This achieves efficient, low-consumption, and high-precision processing of irregularly shaped glass holes, which is suitable for fiber optic alignment components.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-30
- Publication Date
- 2026-06-26
AI Technical Summary
Existing laser-induced wet etching technology has a complex optical path when processing oblique holes, making it difficult to industrialize. It is also difficult to achieve efficient, low-consumption, and high-precision processing of irregular glass holes, which cannot meet the high-precision requirements of fiber optic alignment components.
A ring laser beam is used to vertically irradiate the glass substrate, and the focal plane position is adjusted along a preset direction so that the focal plane of the ring laser beam falls sequentially in multiple sub-regions. Combined with the etching solution, the glass substrate is etched to form glass through holes. High-precision processing is achieved by controlling the focal plane position and optimizing beam shaping.
It achieves efficient, low-consumption, and high-precision processing of glass through-holes, adapts to the processing requirements of fiber optic alignment components, reduces the difficulty of optical setup, and enhances industrialization potential.
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Figure CN122274482A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor processing technology, and more specifically, to a method for processing glass through-holes. Background Technology
[0002] In high-end optoelectronic fields such as optical communication and fiber optic sensing, fiber alignment is a core component ensuring the efficiency, stability, and reliability of system optical transmission, and its performance directly determines the operational quality of the entire optoelectronic system. As technologies such as 5G communication and data center interconnection iterate towards higher speeds and densities, fiber alignment components not only need to meet sub-micron level high-precision alignment requirements but also need to adapt to diverse application scenarios such as multi-channel parallel transmission and optical path switching. This poses stringent challenges to the structural complexity and manufacturing precision of the alignment carrier.
[0003] Glass, due to its inherent compatibility with fiber optic systems, has become the preferred material for high-end fiber optic alignment substrates. It possesses advantages such as broad spectral transmittance, refractive index that precisely matches the fiber, thermal expansion coefficient that closely matches the fiber, and strong chemical inertness and resistance to harsh environments. Furthermore, it can be precision-machined to fabricate complex irregular structures such as Y-shaped holes and oblique holes, providing core structural support for scenarios such as multi-channel fiber branch alignment and optical path reversal alignment. Therefore, the efficient and precise fabrication of irregular holes such as Y-shaped holes and oblique holes on glass substrates has become a key technological breakthrough for improving the performance of fiber optic alignment components.
[0004] Currently, laser-induced wet etching is the mainstream method for fabricating complex channels in glass substrates. Its core logic is "laser local modification + chemical selective etching," which has advantages such as high processing precision and low thermal damage compared to traditional mechanical drilling and simple chemical etching processes. Existing laser-induced wet etching methods for processing irregularly shaped holes in glass use an objective lens to focus the laser, forming a solid laser beam through the objective lens and Z-axis slide. This is then combined with an X / Y precision displacement platform to follow a circular interpolation trajectory, achieving layer-by-layer modification of the glass. However, when processing angled holes, a tilted laser incidence method is required, resulting in a complex optical path that is difficult to industrialize. Summary of the Invention
[0005] The purpose of this application is to provide a glass through-hole processing method that addresses the shortcomings of the prior art, enabling efficient, low-consumption, and high-precision processing of irregularly shaped holes, and adapting to the glass substrate processing requirements of fiber optic alignment components.
[0006] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows: This application provides a method for processing glass through holes, including: A ring laser beam is used to irradiate a glass substrate, and the focal plane position of the ring laser beam is adjusted along a preset direction so that the focal plane of the ring laser beam falls sequentially on multiple sub-regions of the glass through-hole, forming a corresponding modified region in each sub-region, wherein the ring laser beam and the corresponding sub-region are matched. An etching solution is used to etch the glass substrate to form glass vias in the glass via region; Among them, multiple sub-regions are sequentially connected regions that are divided along a preset direction in the glass through-hole region of the glass substrate. The preset direction is along the thickness direction of the glass substrate from the lower surface to the upper surface of the glass substrate. Among them, the glass through-hole has at least one of the following: a change in aperture or a center offset.
[0007] Optionally, the annular laser beam is matched with the corresponding sub-region, such that the centerline of the annular laser beam coincides with the centerline of the corresponding sub-region, the outer diameter of the annular laser beam is smaller than the diameter of the corresponding sub-region, and the focal plane of the annular laser beam is located at a fixed height in the corresponding sub-region.
[0008] Optionally, irradiating the glass substrate with a ring laser beam includes irradiating the glass substrate by shaping a Gaussian beam into a ring laser beam.
[0009] Optionally, while adjusting the focal plane position of the ring laser beam along a preset direction, the glass substrate or the ring laser beam is moved within a preset plane, wherein the preset plane is perpendicular to the preset direction.
[0010] Optionally, while adjusting the focal plane position of the ring laser beam along a preset direction, the outer diameter of the ring laser beam is increased by a first preset value, wherein the first preset value is the difference in diameter between two adjacent sub-regions.
[0011] Optionally, the outer diameter of the ring laser beam is increased by a first preset value while the inner diameter of the ring laser beam is increased by a second preset value, wherein the second preset value is greater than or equal to the first preset value.
[0012] Optionally, the focal plane position of the annular laser beam can be adjusted along a preset direction while simultaneously adjusting the focal plane thickness.
[0013] Optionally, when adjusting the focal plane position of the ring laser beam along a preset direction, the energy density of the ring laser beam remains unchanged.
[0014] Optionally, the single adjustment distance of the focal plane position is 1μm~10μm; And / or, the difference between the diameter of the sub-region and the outer diameter of the corresponding annular laser beam is 1 μm to 10 μm.
[0015] Optionally, the focal plane is an annular plane or an annular cylinder, the outer diameter of the annular laser beam is 10μm~1000μm, the inner diameter of the annular laser beam is 5μm~1000μm, and when the focal plane is an annular cylinder, the focal plane thickness is 1µm~100µm.
[0016] Optionally, the glass through-hole can be a straight hole, an oblique hole, a tapered hole, an oblique tapered hole, or a combination of two or more of these.
[0017] Optionally, the ring laser beam is directed perpendicularly to the upper surface of the glass substrate.
[0018] Optionally, the diameter of the glass through-hole is 30μm to 1000μm.
[0019] Optionally, irradiating the glass substrate with a ring laser beam includes: A point laser beam is used to move relative to the glass substrate along a circular path to form a circular laser beam that irradiates the glass substrate.
[0020] Optionally, the diameter of the point laser beam is 1.5μm to 3μm, the distance between two adjacent laser irradiation points on the annular path is 1μm to 2μm, and the single adjustment distance of the focal plane position is 2μm to 10μm.
[0021] The beneficial effects of this application include: This application provides a method for processing glass through-holes, comprising: irradiating a glass substrate with a ring laser beam and adjusting the focal plane position of the ring laser beam along a preset direction so that the focal plane of the ring laser beam sequentially falls on multiple sub-regions of the glass through-hole, forming a corresponding modified region in each sub-region, wherein the ring laser beam and the corresponding sub-region are matched; etching the glass substrate with an etchant to form a glass through-hole in the glass through-hole region; wherein the multiple sub-regions are sequentially connected regions divided along a preset direction in the glass through-hole region of the glass substrate, the preset direction being along the thickness direction of the glass substrate from the lower surface to the upper surface; wherein the glass through-hole has at least one of a diameter variation or a center offset. In this method for processing glass through-holes, the ring laser beam is incident perpendicularly to the surface of the glass substrate, and the smoothness of the glass through-hole is controlled by controlling the single adjustment distance of the focal plane position, which greatly reduces the difficulty of optical setup, allows for industrialization, and ensures accuracy. At the same time, through beam shaping optimization and motion control simplification, efficient, low-consumption, and high-precision processing of complex irregular holes is achieved, thereby adapting to the glass substrate processing requirements of fiber optic alignment components. Attached Figure Description
[0022] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0023] Figure 1 This is a schematic diagram of the structure of the glass substrate provided in the embodiments of this application; Figure 2 A flowchart illustrating the processing method for glass through-holes provided in this application embodiment; Figure 3 A schematic diagram illustrating the processing of a glass through-hole provided in an embodiment of this application; Figure 4 This is one of the structural schematic diagrams of the ring laser beam provided in the embodiments of this application; Figure 5 This is the second schematic diagram of the structure of the ring laser beam provided in the embodiments of this application; Figure 6 One of the schematic diagrams of a ring laser beam irradiating a glass substrate provided in an embodiment of this application; Figure 7 This is one of the structural schematic diagrams of multiple modified regions provided in the embodiments of this application; Figure 8 A second schematic diagram of the structure of multiple modified regions provided in the embodiments of this application; Figure 9 This is a second schematic diagram of a ring laser beam irradiating a glass substrate according to an embodiment of this application. Figure 10 This is the third schematic diagram of the structure of the multiple modified regions provided in the embodiments of this application; Figure 11 The fourth of the structural schematic diagrams of the multiple modified regions provided in the embodiments of this application.
[0024] Icons: 10-Glass substrate; 11-Glass through-hole; 11a-Y-shaped straight hole; 11b-Columnar oblique hole; 11c-Y-shaped oblique hole; 11d-Conical hole; 11e-Columnar straight hole; 12-Glass through-hole area; 121-Sub-region; 13-Modified area; 20-Annular laser beam; 30-Spatial light modulator; 40-Gaussian beam; 50-Stage; 60-Point laser beam; 70-Annular path; 80-Focusing objective; Z-Preset direction; ΔZ-Focal thickness; R 外 -Outer diameter; R 内 - Inner diameter; ΔR - Difference between inner and outer diameters; α - Angle; β - Inclination angle. Detailed Implementation
[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0026] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. It should be noted that, unless otherwise specified, the various features in the embodiments of this application can be combined with each other, and the combined embodiments are still within the protection scope of this application.
[0027] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0028] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0029] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0030] This application provides a method for processing glass through holes. Please refer to the following embodiments. Figure 1This device is used to process through holes in a glass substrate 10, and is particularly suitable for processing irregularly shaped holes such as Y-shaped straight holes 11a, columnar oblique holes 11b, Y-shaped oblique holes 11c, and tapered holes 11d in the glass substrate 10. It can also be used to process columnar straight holes 11e in the glass substrate 10. Specifically, the through hole has at least one of the following: a change in hole diameter or a center offset, at least a portion of the substrate thickness. For example, a tapered hole is an example of a change in diameter, and an oblique hole is an example of a center offset. The aforementioned Y-shaped straight hole 11a includes a change in hole diameter, the columnar oblique hole 11b has a center offset, the Y-shaped oblique hole 11c includes both a change in hole diameter and a center offset, and the tapered hole 11d includes a change in hole diameter.
[0031] Specifically, please refer to Figure 2 The processing methods for glass through holes include: S100: A ring laser beam is used to irradiate the glass substrate, and the focal plane position of the ring laser beam is adjusted along a preset direction so that the focal plane of the ring laser beam falls sequentially on multiple sub-regions of the glass through-hole, forming a corresponding modified region in each sub-region, wherein the ring laser beam and the corresponding sub-region are matched.
[0032] S200: The glass substrate is etched with an etchant to form glass vias in the glass via area.
[0033] Among them, multiple sub-regions are sequentially connected regions that are divided along a preset direction in the glass through-hole region of the glass substrate. The preset direction is along the thickness direction of the glass substrate from the lower surface to the upper surface.
[0034] Among them, the glass through-hole has at least one of the following: a change in aperture or a center offset.
[0035] Please refer to the reference. Figure 3 Before processing, the shape, size and position of the required glass through hole 11 are first determined, and the glass through hole region 12 is determined on the glass substrate 10 according to the required glass through hole 11. The glass through hole region 12 is the region on the glass substrate 10 used to form the glass through hole 11, and the outer contour of the glass through hole region 12 is the outer contour of the glass through hole 11.
[0036] The glass via 11 is divided into multiple sub-regions 121 along a predetermined direction Z, which is also the depth direction of the desired glass via 11. During subsequent laser modification, modified regions 13, corresponding one-to-one with the sub-regions 121, are formed on the glass substrate 10. The corrosion rate of the modified regions 13 is much higher than that of the other regions. Thus, during corrosion, the modified regions 13 are etched vertically and circumferentially, extending circumferentially towards the modified regions 13 while simultaneously connecting to adjacent modified regions 13, thereby forming glass vias 11 on the glass substrate 10. The glass via 11 can be a straight hole, an oblique hole, a tapered hole, an oblique tapered hole, or a combination of two or more of these.
[0037] It is understandable that the more sub-regions 121 there are, the more modified regions 13 the ring laser beam 20 forms on the glass substrate 10. Under the premise that the thickness of the glass substrate 10 is certain, the interval between adjacent modified regions 13 will be smaller, and the shape and size of the glass through hole 11 actually processed will be closer to the required glass through hole 11, and the glass through hole 11 will be smoother. Figure 3 To facilitate the representation of each sub-region 121 and the modified region 13, the number of sub-regions 121 within the glass through-hole region 12 is relatively small. When it is a tapered hole, the outer diameter R of two adjacent modified regions 13 is... 外 The differences are also significant. However, in actual processing, the number of sub-regions 121 will be greater, and the outer diameter R of two adjacent modified regions 13 will also be greater. 外 The differences are also smaller, so the sidewalls of the glass through-hole 11 obtained after corrosion will not have obvious steps.
[0038] Please refer to the reference. Figure 4 and Figure 5 A ring laser beam 20 (with a ring-shaped cross-section) is used to irradiate the glass substrate 10. The ring laser beam 20 has a focal plane, and the area within the focal plane modifies the glass substrate 10. By adjusting the position of the focal plane of the ring laser beam 20 along a preset direction Z, multiple spaced modification regions 13 can be formed in the preset direction Z. The focal plane of the ring laser beam 20 falls sequentially within multiple sub-regions 121, ensuring that the obtained modification regions 13 correspond one-to-one with the sub-regions 121.
[0039] It should be noted that the two adjacent modified regions 13 have a certain interval in the preset direction Z. The annular laser beam 20 is matched with its corresponding sub-region 121, that is, the center line of the annular laser beam 20 needs to coincide with the center line of its corresponding sub-region 121. That is, the center line of the annular laser beam 20 is located on the center line of the corresponding sub-region. The outer diameter of the annular laser beam 20 is smaller than the outer diameter of the corresponding sub-region 121, so that the glass through hole 11 actually processed after etching is closer to the required glass through hole 11.
[0040] The focal plane of the ring laser beam 20 can be cylindrical (e.g., Figure 4 As shown), it can also be a toroidal plane (such as...). Figure 5 (As shown). When the focal plane is annular, the modification speed is fast, and the subsequent etching time is short, which can improve the processing efficiency of the glass through-hole 11. When the focal plane is annular, the required laser pulse energy is lower, which can save costs to some extent, but the modification time is relatively long, and the subsequent etching time is also longer. With a certain laser pulse energy, it can be used to process thicker glass substrates 10. When the focal plane is annular, the focal plane thickness ΔZ can be selected from 1µm to 100µm to balance processing efficiency and processing cost.
[0041] It should be noted that the modified region 13 (i.e., the focal plane of the ring laser beam 20) corresponds one-to-one with the sub-region 121. The modified region 13 can be located at any position within the corresponding sub-region 121, for example, at its bottom, middle, or top. However, it should be noted that in different sub-regions 121, the modified region 13 is located at a fixed height within the corresponding sub-region 121. That is, the focal plane of the ring laser beam 20 is located at a fixed height within the corresponding sub-region 121, thus ensuring that each modified region 13 is in the same position within the sub-region. For example, preferably, they are all located in the middle of the corresponding sub-region 121. It can be understood that the modified region 13 corresponds to the position where the focal plane of the ring laser beam 20 acts. In this application, describing the position of the modified region 13 also refers to the position where the focal plane of the ring laser beam 20 acts.
[0042] The multiple sub-regions 121 have equal thicknesses; in other words, the distance between adjacent modified regions 13 is equal. This ensures uniform etching along the thickness direction of the glass substrate 10 during subsequent etching, improving the smoothness of the glass vias 11.
[0043] After modification, the modified region 13 on the glass substrate 10 is etched with an etchant to form a glass through-hole 11 on the glass substrate 10. When the glass substrate 10 is etched with the etchant, the corrosion rate of the modified region 13 is much greater than that of the unmodified region. Thus, the modified region 13 is etched circumferentially and vertically, and adjacent modified regions 13 in the Z-direction are etched through each other. Furthermore, the modified region 13 is etched both circumferentially and internally, and the un-etched area in the middle falls off, thereby forming the glass through-hole 11.
[0044] In the aforementioned method for processing glass through-holes, the ring laser beam 20 is incident perpendicularly on the surface of the glass substrate 10. By controlling the single-time adjustment distance of the focal plane position, the smoothness of the glass through-hole 11 is controlled, greatly reducing the difficulty of optical setup, enabling industrialization, and ensuring timely completion. Simultaneously, through beam shaping optimization and simplified motion control, efficient, low-consumption, and high-precision processing of complex irregular holes is achieved, thus meeting the processing requirements of the glass substrate 10 for fiber optic alignment components.
[0045] The glass through-hole processing method of the present invention differs from the preparation of small-diameter glass micropores in the prior art. It aims to prepare through-holes with larger diameters, for example, suitable for processing glass through-holes with diameters of 30μm to 1000μm, preferably 100μm to 1000μm, and more preferably 125μm to 600μm.
[0046] Optionally, the annular laser beam 20 is matched with the corresponding sub-region 121, such that the centerline of the annular laser beam 20 coincides with the centerline of the corresponding sub-region, the outer diameter of the annular laser beam is smaller than the diameter of the corresponding sub-region, and the focal plane of the annular laser beam 20 is located at a fixed height in the corresponding sub-region.
[0047] Optionally, irradiating the glass substrate with a ring laser beam includes irradiating the glass substrate by shaping a Gaussian beam into a ring laser beam.
[0048] A ring laser beam 20, matching the sub-region 121, is used to irradiate the glass substrate 10 to form the modified region 13. During the formation of a single modified region 13, neither the ring laser beam 20 nor the glass substrate 10 needs to follow a circular interpolation trajectory within a preset plane perpendicular to the preset direction Z. Compared to traditional processing methods, this significantly shortens the processing time per hole, improves processing efficiency, and better suits the needs of large-scale mass production. Simultaneously, it significantly reduces equipment control complexity and hardware matching costs, facilitating industrial-scale application.
[0049] Furthermore, irradiating the glass substrate by shaping the Gaussian beam into a ring laser beam includes: S211: A spatial light modulator is used to shape the Gaussian beam emitted by the laser into a ring laser beam before irradiating the glass substrate.
[0050] Please refer to Figure 6 A spatial light modulator 30 (SPA26001459) is used to shape the Gaussian beam 40 emitted by the laser to form the desired ring laser beam 20. Optionally, the laser emits pulsed laser light with a wavelength range of 515 nm to 1064 nm, a pulse width of 200 fs to 15 ps, and a repetition frequency of 100 kHz to 500 kHz. The method of forming the ring laser beam 20 using the spatial light modulator 30 is prior art and will not be described in detail here.
[0051] Please refer to the reference. Figure 1 The spatial light modulator 30 can precisely control the beam shape, focal plane position, and energy density distribution of the ring laser beam 20. Combined with a preset direction Z-gradient modification process, it can form uniform Y-shaped holes, oblique holes, and other irregularly shaped holes on a glass substrate 10 with a thickness of 0.05mm to 10mm. The hole accuracy can meet the sub-micron requirements of fiber alignment, ensuring the transmission efficiency and stability of subsequent fiber alignment components. At the same time, the movement of the focal plane position of the ring laser beam 20 in the preset direction Z can be directly achieved by the spatial light modulator 30, further improving processing efficiency and reducing equipment control difficulty and hardware matching costs.
[0052] Alternatively, please refer to Figure 7Optionally, while adjusting the focal plane position of the ring laser beam 20 along the preset direction Z, the glass substrate 10 or the ring laser beam 20 is moved within a preset plane, wherein the preset plane is perpendicular to the preset direction Z.
[0053] Please refer to the reference. Figure 3 When processing straight holes, since the center lines of each sub-region 121 are located on the same straight line and parallel to the preset direction Z, the center lines of each modified region 13 to be formed are also located on the same straight line and parallel to the preset direction Z. At this time, in the process of forming each modified region 13, it is only necessary to adjust the focal plane position of the annular laser beam 20 along the preset direction Z, without moving the focal plane or the glass substrate 10 in the preset plane perpendicular to the preset direction Z.
[0054] However, if it is necessary to process oblique holes, the center lines of the two modified regions 13 formed successively are parallel and not on the same straight line. Therefore, it is also necessary to adjust the position of the glass substrate 10 or the ring laser beam 20 according to the offset distance and offset direction of the center line of the later-formed modified region 13, so as to form the modified region 13 corresponding to the sub-region 121 on the glass substrate 10.
[0055] It is understandable that if the required glass through-hole 11 consists of straight holes and oblique holes, the processing process needs to be divided into different stages. In the straight hole processing stage, the focal plane position of the ring laser beam 20 is adjusted only along the preset direction Z, and the focal plane or glass substrate 10 is not moved within the preset plane. In the oblique hole processing stage, while adjusting the focal plane position of the ring laser beam 20 along the preset direction Z, the focal plane or glass substrate 10 is also moved within the preset plane.
[0056] Alternatively, please refer to Figure 6 The glass substrate 10 is placed on the stage 50, which can move the glass substrate 10 along a first direction and a second direction, wherein the first direction and the second direction are perpendicular to each other and both parallel to a preset plane. In this way, the glass substrate 10 can be moved to any position within the preset plane by means of the stage 50.
[0057] Alternatively, please refer to Figure 8 While adjusting the focal plane position of the ring laser beam 20 along the preset direction Z, the outer diameter of the ring laser beam 20 is expanded by a first preset value, wherein the first preset value is the difference in diameter between two adjacent sub-regions 121.
[0058] If it is necessary to process a conical hole on the glass substrate 10 ( Figure 8 (The upper half of the glass through-hole 11), so although the center lines of the two modified regions 13 formed successively are on the same straight line, the outer diameters R of the two modified regions 13 are different. 外 There needs to be some difference. Therefore, it is also necessary to consider the outer diameter R of the subsequently formed modified region 13.外 The change value corresponds to adjusting the outer diameter R of the ring laser beam 20. 外 The dimensions are adjusted to form a modified region 13 on the glass substrate 10 corresponding to the sub-region 121. It can be understood that the outer diameter R of the annular laser beam 20... 外 The size adjustment value (i.e., the first preset value) is equal to the difference in diameter between the corresponding two sub-regions 121. If the diameter of the sub-region 121 changes, the average of the maximum and minimum diameters of the sub-region 121 can be used as the diameter of that sub-region 121. Those skilled in the art will understand that when etching the glass substrate 10, different modified regions 13 are etched circumferentially and vertically, and the difference between the outer diameter of each sub-region 121 and the outer diameter of the corresponding modified region 13 is equal, thus ensuring the smoothness of the glass through-hole 11.
[0059] It should be noted that, at this time, the matching of the annular laser beam 20 with the corresponding sub-region 121 means that the center line of the modified region 13 formed by the annular laser beam 20 on the glass substrate 10 coincides with the center line of the corresponding sub-region 121. That is, the center line of the annular laser beam 20 is located on the center line of the corresponding sub-region 121, the diameter of the modified region 13 is smaller than the diameter of the corresponding sub-region 121, and the difference between the diameter of different modified regions 13 and the diameter of the corresponding sub-region 121 is equal.
[0060] Please refer to the reference. Figure 7 If it is necessary to process oblique conical holes on the glass substrate 10 ( Figure 7 (The upper half of the glass through-hole 11) means that while adjusting the focal plane position of the annular laser beam 20 along the preset direction Z, the glass substrate 10 or the annular laser beam 20 must be moved simultaneously within the preset plane, and the outer diameter R of the annular laser beam 20 must be adjusted. 外 The region is expanded to form a modified region 13 that matches each subregion 121.
[0061] Optionally, while increasing the outer diameter of the annular laser beam 20 by a first preset value, the inner diameter of the annular laser beam 20 is increased by a second preset value, wherein the second preset value is greater than or equal to the first preset value.
[0062] The inner diameter R of the ring laser beam 20 内 and outer diameter R 外 Synchronous expansion refers to the expansion of the outer diameter R of the ring laser beam 20. 外 When expanded, the inner diameter R of the ring laser beam 20 内 This also expands the area. This setup reduces the difference in energy density between the ring laser beams 20 used in the two successively formed modified regions 13, providing a good foundation for subsequent wet etching.
[0063] Furthermore, when the inner diameter R of the ring laser beam 20 内 and outer diameter R外 When both are enlarged, the inner diameter R 内 The expansion rate is greater than the outer diameter R 外 By controlling the expansion speed and ensuring that the area of the ring laser beam 20 is equal, the energy density of the ring laser beam 20 can be guaranteed to be the same. In this way, the energy density of the ring laser beam 20 used in the two modified regions 13 formed successively can be guaranteed to be the same.
[0064] Preferably, the energy density of the ring laser beam 20 remains constant. That is, during the formation of multiple modified regions 13, the energy density of the ring laser beam 20 remains constant, thus providing a good foundation for subsequent wet etching.
[0065] A method to ensure that the energy density of the ring laser beam 20 remains constant can be achieved by synchronously changing the outer diameter R of the ring laser beam 20. 外 and inner diameter R 内 This can also be achieved by changing the focal thickness ΔZ of the ring laser beam 20.
[0066] Optionally, the focal plane position of the ring laser beam 20 can be adjusted along the preset direction Z while the focal plane thickness is adjusted, so that the energy density of the ring laser beam 20 remains constant.
[0067] The outer diameter R of the ring laser beam 20 外 The inner diameter R is mainly determined based on the diameter of the corresponding sub-region 121. 内 It mainly depends on the outer diameter R 外 The laser energy is determined. The single adjustment distance of the focal plane position (i.e., the step distance in the preset direction Z) is mainly determined based on the thickness of the glass substrate 10 and the accuracy requirements of the glass through hole 11.
[0068] Optionally, the single adjustment distance of the focal plane position is 1μm~10μm; in this way, both processing efficiency and accuracy requirements can be taken into account.
[0069] And / or, the difference between the diameter of the sub-region 121 and the outer diameter of the corresponding annular laser beam 20 is 1μm~10μm, so that the glass through-hole 11 actually processed after etching is closer to the desired glass through-hole 11.
[0070] Optionally, please refer to the following: Figure 4 The focal plane is a ring-shaped plane or a ring cylinder, and the outer diameter R of the ring laser beam is 20. 外 The inner diameter R of the ring laser beam 20 is 10μm~1000μm. 内The focal length ranges from 5μm to 1000μm, and when the focal surface is annular, the focal surface thickness ranges from 1µm to 100µm. This setting balances processing efficiency, energy consumption, and accuracy requirements. It can be understood that the single adjustment distance of the focal surface position is equivalent to the height of each sub-region 121. Preferably, this distance is equal to the difference between the outer diameter of the sub-region 121 and the outer diameter of the corresponding modified region 13. Thus, when the etchant penetrates vertically, it also etches to the required outer diameter circumferentially, further improving the smoothness of the glass through-hole 11.
[0071] Optionally, the annular laser beam 20 is directed perpendicularly to the upper surface of the glass substrate 10 to make the actual processed glass through-hole 11 closer to the desired glass through-hole 11.
[0072] Alternatively, please refer to Figure 9 and Figure 10 The method of irradiating the glass substrate 10 with a ring laser beam 20 includes: moving a point laser beam 60 relative to the glass substrate 10 along a ring path to form a ring laser beam 20 to irradiate the glass substrate 10.
[0073] During the formation of a single modified region 13, a point laser beam 60 (with a circular cross-section) is used to irradiate the glass substrate 10. At the same time, the point laser beam 60 or the glass substrate 10 is moved along the annular path 70, thereby forming a modified region 13 with an annular cross-section on the glass substrate 10.
[0074] This processing method can form a good modified area 13, but it requires multiple adjustments to the focal plane position along the preset direction Z and a circular interpolation trajectory within the preset plane, resulting in low processing efficiency, but the subsequent etching time is shorter.
[0075] The diameter of the point laser beam 60 is mainly determined based on the laser energy. The single adjustment distance of the focal plane position is mainly determined based on the thickness of the glass substrate 10 and the precision requirements of the glass through-hole 11. The distance between two adjacent laser irradiation points on the annular path 70 is mainly determined based on the diameter of the corresponding sub-region 121 and the precision requirements of the glass through-hole 11.
[0076] Optionally, the diameter of the point laser beam 60 is 1.5μm to 3μm, the single adjustment distance of the focal plane position is 2μm to 10μm, and the distance between two adjacent laser irradiation points on the annular path 70 is 1μm to 2μm. This configuration can balance processing efficiency, energy consumption, and accuracy requirements.
[0077] The following are some typical methods for preparing irregular holes.
[0078] Example 1: Please refer to Figures 6 to 8A glass substrate 10 is placed on a stage 50. A Gaussian beam 40 is shaped into a ring laser beam 20 with a toroidal focal plane using a spatial light modulator 30, wherein the outer diameter R of the ring laser beam 20 is... 外 Inner diameter R 内 The difference between the inner and outer diameters ΔR and the focal thickness ΔZ can both be controlled; the focal thickness ΔZ is 1µm~100µm, and the inner diameter R... 内 The outer diameter is 5µm to 1000µm, and the outer diameter R is... 外 The thickness ranges from 10µm to 1000µm. During processing, a modified region 13 is first formed on the bottom layer of the glass substrate 10. Then, by using a preset Z-step direction, the modified regions 13 are formed layer by layer from the bottom layer of glass upwards until a circular modified region 13 mark is formed on the upper surface of the glass substrate 10 after laser modification. The preset Z-step distance is achieved by a spatial light modulator 30, and is typically 2µm to 100µm.
[0079] When to form Figure 8 When using Y-shaped straight holes, layers Z1 to Z n The machining consists of the straight hole section of Y-shaped straight hole 11a ( Figure 8 The position of the lower half of the through-hole 11 in the middle glass is determined. At this time, the outer diameter R of the stage 50 and the annular laser beam 20 is maintained. 外 Inner diameter R 内 The centerline position of the ring laser beam 20 remains unchanged, only the preset direction Z step distance is changed. During this process, the focal plane thickness ΔZ can be selected from 10µm to 100µm, and the step distance can be selected from 2µm to 100µm. The processing of layers Zn to Zm is determined by the angle α of the tapered section of the Y-shaped straight hole 11a. At this time, the centerline positions of the stage 50 and the ring laser beam 20 remain unchanged, and the outer diameter R of the ring laser beam 20 is adjusted by the spatial light modulator 30 while maintaining a constant energy density per unit volume. 外 and inner diameter R 内 The focal plane thickness ΔZ is increased while the difference between the inner and outer diameters ΔR of the annular laser beam 20 remains constant or decreases. During this process, the focal plane thickness ΔZ can be selected from 1µm to 5µm, and the step distance can be selected from 2µm to 10µm.
[0080] When to form Figure 7 When creating a Y-shaped oblique hole, layer Z1 to Z n The machining consists of the straight hole section of the Y-shaped oblique hole 11c ( Figure 7 The position of the lower half of the through-hole 11 in the middle glass is determined, and at this time the outer diameter R of the annular laser beam 20 is maintained. 外 Inner diameter R 内With the centerline position of the ring laser beam 20 unchanged, the stage 50 calculates a preset offset based on the oblique angle β of the oblique aperture segment and performs synchronous offset in the X and / or Y directions. During this process, the focal plane thickness ΔZ can be selected from 2µm to 10µm, and the step distance can be selected from 2µm to 10µm. The processing of layers Zn to Zm is determined by the angle α of the tapered aperture segment of the Y-shaped oblique aperture 11c. While the stage 50 performs synchronous offset in the X and / or Y directions by calculating the preset offset, the spatial light modulator 30, while maintaining a constant energy density per unit volume, adjusts the outer diameter R of the ring laser beam 20. 外 and inner diameter R 内 The focal plane thickness ΔZ is reduced while the inner and outer diameters R of the annular laser beam 20 are maintained. 外 The difference ΔR remains constant or decreases. During this process, the focal plane thickness ΔZ can be selected from 1µm to 5µm, and the step distance can be selected from 2µm to 10µm.
[0081] Example 2: Please refer to Figures 6 to 8 A glass substrate 10 is placed on a stage 50. A Gaussian beam 40 is shaped into a ring laser beam 20 with a ring-shaped focal plane using a spatial light modulator 30. The outer diameter R of the ring laser beam 20 is... 外 Inner diameter R 内 Both the difference between the inner and outer diameters ΔR and the inner diameter R are controllable; 内 The outer diameter is 5µm to 1000µm, and the outer diameter R is... 外 The thickness ranges from 10µm to 1000µm. During processing, a modified region 13 is first formed on the bottom layer of the glass substrate 10. Then, the modified region 13 is formed layer by layer from the bottom layer of the glass structure upwards using a preset Z-step direction, until a circular modified region 13 mark is formed on the upper surface of the glass substrate 10 after laser modification. The preset Z-step distance is achieved by a spatial light modulator 30, and is typically 2µm to 10µm.
[0082] The main difference between Example 2 and Example 1 is that the focal plane shape of the ring laser beam 20 used is different, while the process of processing irregular holes such as Y-shaped straight holes 11a and Y-shaped oblique holes 11c is the same.
[0083] Example 3: Please refer to Figure 9 and Figure 10The focusing objective lens 80 is placed on a sliding stage. The laser beam is focused by the focusing objective lens 80 to form a short depth-of-focus spot with a diameter of 1.5 μm to 3 μm. The sliding stage drives the focusing lens to move along a preset direction Z to achieve stepping of the laser spot in the preset direction Z. The glass substrate 10 is placed on a stage 50. The stage 50 first travels along a ring path 70 at a dot pitch of 1 μm on the bottom layer of the glass substrate 10. Because wet etching requires a certain size allowance, the diameter of the ring path 70 is generally 2 µm to 50 µm smaller than the target aperture value. Then, the glass substrate 10 is modified layer by layer from the bottom layer upwards by stepping in the preset direction Z until a circular mark of laser modification is formed on the upper surface of the glass substrate 10. The distance of the preset direction Z step is 2 µm to 10 µm. The number of preset direction Z steps varies depending on the thickness of the glass substrate 10; the thicker the glass substrate 10, the more preset direction Z steps are required.
[0084] When to form Figure 10 When using Y-shaped straight holes, layers Z1 to Z n The machining consists of the straight hole section of Y-shaped straight hole 11a ( Figure 10 The position of the lower half of the through hole 11 in the middle glass is determined. At this time, the stage 50 keeps the size and center position of the annular path 70 unchanged. The processing of layers Zn to Zm is determined by the angle α of the tapered section of the Y-shaped straight hole 11a. At this time, the stage 50 keeps the center position of the annular path 70 unchanged and gradually changes the diameter of the annular path 70.
[0085] When to form Figure 11 When creating a Y-shaped oblique hole, layer Z1 to Z n The machining consists of the straight hole section of the Y-shaped oblique hole 11c ( Figure 11 The position of the lower half of the through-hole 11 in the middle glass is determined. At this time, the stage 50 keeps the diameter of the annular path 70 unchanged. The center position of the annular path 70 is calculated with a preset offset based on the inclination angle β of the inclined hole section, and synchronous offset is performed in the X and / or Y directions. The processing of layers Zn to Zm is determined by the opening angle α of the tapered hole section of the Y-shaped inclined hole 11c. While the stage 50 is synchronously offset in the X and / or Y directions by calculating the preset offset, the diameter of the annular path 70 is gradually changed.
[0086] The processing method of Example 3 can form a good modified region 13, but the processing efficiency is low because it requires multiple processing steps along the preset direction Z and circular interpolation trajectory in the X / Y directions, but the chemical wet etching time is short.
[0087] Both Examples 1 and 2 require less etching and shorter etching times. However, compared to Example 3, Example 1 does not require the stage 50 to follow a circular interpolation trajectory, and the stepping in the preset direction Z is also quickly achieved through the spatial light modulator 30, drastically reducing the processing time for a single hole and greatly improving processing efficiency.
[0088] Compared to Examples 1 and 3, Example 2 requires lower laser energy, which can save costs to some extent, but requires a longer etching time. Example 2, with a fixed laser pulse energy, can be used to process thicker glass.
[0089] It should be understood that although the steps in the flowchart of this application are shown sequentially as indicated by the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowchart may include multiple steps or multiple stages, which are not necessarily completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages in other steps.
[0090] The above description is merely an optional embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A method for processing through holes in glass, characterized in that, include: A ring laser beam is used to irradiate a glass substrate, and the focal plane position of the ring laser beam is adjusted along a preset direction so that the focal plane of the ring laser beam falls sequentially on multiple sub-regions of the glass through-hole, forming a corresponding modified region in each sub-region, wherein the ring laser beam and the corresponding sub-region are matched. The glass substrate is etched with an etchant to form glass vias in the glass via region; The plurality of sub-regions are regions that are sequentially connected and divided along the glass through-hole region of the glass substrate along the preset direction, the preset direction being along the thickness direction of the glass substrate from the lower surface to the upper surface of the glass substrate. The glass through-hole has at least one of the following: a change in aperture or a center offset.
2. The method for processing glass through holes as described in claim 1, characterized in that, The annular laser beam is matched with the corresponding sub-region, such that the centerline of the annular laser beam coincides with the centerline of the corresponding sub-region, the outer diameter of the annular laser beam is smaller than the diameter of the corresponding sub-region, and the focal plane of the annular laser beam is located at a fixed height of the corresponding sub-region.
3. The method for processing glass through holes according to claim 1, characterized in that, Irradiating a glass substrate with a ring laser beam involves shaping a Gaussian beam into a ring laser beam before irradiating the glass substrate.
4. The method for processing glass through holes as described in claim 1, characterized in that, While adjusting the focal plane position of the annular laser beam along a preset direction, the glass substrate or the annular laser beam is moved within a preset plane, wherein the preset plane is perpendicular to the preset direction.
5. The method for processing glass through holes as described in claim 1, characterized in that, While adjusting the focal plane position of the annular laser beam along a preset direction, the outer diameter of the annular laser beam is increased by a first preset value, wherein the first preset value is the difference in diameter between two adjacent sub-regions.
6. The method for processing glass through holes as described in claim 5, characterized in that, While increasing the outer diameter of the ring laser beam by a first preset value, the inner diameter of the ring laser beam is also increased by a second preset value, wherein the second preset value is greater than or equal to the first preset value.
7. The glass light-transmitting processing method according to claim 1, characterized in that, The focal plane position of the annular laser beam is adjusted along a preset direction while the focal plane thickness is adjusted.
8. The method for processing glass through holes as described in claim 1, characterized in that, When the focal plane position of the ring laser beam is adjusted along a preset direction, the energy density of the ring laser beam remains unchanged.
9. The method for processing glass through holes as described in claim 2, characterized in that, The single adjustment distance of the focal plane position is 1μm~10μm; And / or, the difference between the diameter of the sub-region and the outer diameter of the corresponding annular laser beam is 1 μm to 10 μm.
10. The method for processing glass through holes as described in claim 1, characterized in that, The focal plane is either an annular plane or an annular cylinder. The outer diameter of the annular laser beam is 10μm to 1000μm, and the inner diameter of the annular laser beam is 5μm to 1000μm. When the focal plane is an annular cylinder, the focal plane thickness is 1µm to 100µm.
11. The method for processing glass through holes as described in claim 1, characterized in that, The glass through-hole can be a straight hole, an oblique hole, a tapered hole, an oblique tapered hole, or a combination of two or more of these.
12. The method for processing glass through holes as described in claim 2, characterized in that, The ring laser beam irradiates the upper surface of the glass substrate perpendicularly.
13. The method for processing glass through holes as described in claim 1, characterized in that, The diameter of the glass through-hole is 30μm~1000μm.
14. The method for processing glass through holes as described in claim 1, characterized in that, The method of irradiating the glass substrate with a ring laser beam includes: A point laser beam is used to move relative to the glass substrate along a circular path to form a circular laser beam that irradiates the glass substrate.
15. The method for processing glass through holes as described in claim 14, characterized in that, The diameter of the point laser beam is 1.5μm to 3μm, the distance between two adjacent laser irradiation points on the annular path is 1μm to 2μm, and the single adjustment distance of the focal plane position is 2μm to 10μm.