Metal mask plate for OLED pixel deposition and method of production
By using the VIM+PESR+VAR triple smelting process to process high-purity iron and high-purity nickel raw materials, and controlling the alloy composition and gas content, pinhole defects in OLED metal masks were solved, and the evaporation quality was improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHEJIANG ZHONGLING TECH CO LTD
- Filing Date
- 2024-12-24
- Publication Date
- 2026-06-26
AI Technical Summary
Existing technologies have failed to effectively address the pinhole defects caused by hard inclusions such as ZrO·HfO and MgO in OLED metal masks, leading to pixel cross-coloring and the formation of satellite pixels during the evaporation process.
The VIM+PESR+VAR triple smelting process is used to process high-purity iron and high-purity nickel raw materials, control the chemical composition and gas content in the alloy, and reduce ZrO and HfO inclusions and eliminate pinhole defects by controlling the proportion of magnesium, zirconium, hafnium, silicon and aluminum elements.
It significantly eliminates pinhole defects, reduces the rate of hole breakage in OLED production, and improves the vapor deposition effect.
Smart Images
Figure CN122279359A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of metal mask technology, and more specifically, to a metal mask for OLED pixel deposition and a method for its production. Background Technology
[0002] Many of the film structures in an Organic Light-Emitting Diode (OLED) are formed by vapor deposition using a Metal Mask Assembly (MFA). A complete MFA typically consists of a mask frame, a fine metal mask (FMM), and an alignment mask. The quality of the fine metal mask (FMM) plays a decisive role in the vapor deposition effect of the film structures.
[0003] Existing technical solutions mainly target the formation of pitted intrusions (PITs) and chain-like PITs in Invar36 material used for FMMs (metal masking machines), such as MnO-SiO2 type oxides, oxide-based non-metallic inclusions MgO·Al2O3, and MnO-SiO2-Al2O3-CaO-MgO-FeO-based inclusions. They also reduce the defect rate of FMM pores (open-type pores with one side without metal surrounding them) by refining and fragmenting the inclusion size through various means.
[0004] However, existing technical solutions do not analyze or propose solutions for the formation of pinhole defects (closed-cell defects with metal surrounding the holes) caused by ZrO·HfO, MgO hard inclusions and high melting point inclusions in FMM.
[0005] Pinholes are a type of defect in FMM (Fiberglass Modulated Metal Mesh) systems. Pinholes range in size from 3μm to 6μm in diameter and appear at the edges of the FMM aperture area. Because the edge of the aperture area is very thin, sometimes less than 2μm-3μm, small, rounded inclusions at the edge are easily corroded by acid and detached from the substrate, forming pinholes. This is why a large number of small, rounded inclusions easily cause pinholes. The difference between pinholes and conventional defects lies in their smaller size, round shape, and greater number. In OLED production, pinholes can easily cause pixel cross-contamination and the formation of satellite pixels during the vapor deposition process. Summary of the Invention
[0006] The purpose of this invention is to provide a metal mask for OLED pixel deposition and a manufacturing method thereof, so as to alleviate the technical problem of pinholes appearing on metal masks in the prior art.
[0007] In a first aspect, embodiments of the present invention provide a method for producing a metal mask for OLED pixel deposition, comprising the following steps: Prepare high-purity iron and high-purity nickel raw materials, with the high-purity iron content between 63.5% and 64.5% and the high-purity nickel content between 35.5% and 36.5%; The raw materials are processed using a VIM+PESR+VAR triple smelting process. VIM process: melting vacuum degree <5Pa, melting temperature between 1480℃-1520℃, refining temperature between 1530℃-1570℃, refining time between 28-32 minutes, vacuum degree <0.5Pa at the end of refining, oxygen content of VIM ingot 0%≤15ppm; PESR process: An inert protective atmosphere is used, the filling ratio is set between 0.5 and 0.8, the current is set between 9kA and 14.5kA, the voltage is set between 55V and 60V, the electroslag material CaF2:Al2O3:CaO = 50wt%-80wt%: 10wt%-25wt%: 10wt%-25wt%, and the oxygen content of PESR ingots is 0%≤15ppm; VAR process: melting vacuum degree <0.5Pa, filling ratio set between 0.6-0.9, melting rate <5kg / min, helium cooling, oxygen content of VAR ingot 0%≤5ppm.
[0008] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the raw materials are processed using a VIM+PESR+VAR+VAR smelting process.
[0009] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein, in the VIM process: the melting vacuum degree is <5Pa, the melting temperature is set to 1500℃, the refining temperature is set to 1550℃, the refining time is set to 30 minutes, the vacuum degree at the end of refining is <0.5Pa, and the oxygen content of the VIM ingot is 0%≤15ppm.
[0010] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein in the PESR process: an argon protective atmosphere is used, the filling ratio is set to 0.7, the current is set to 12kA, the voltage is set to 55V, the electroslag material CaF2:Al2O3:CaO=60wt%:20wt%:20wt%, and the oxygen content of the PESR ingot is 0%≤15ppm.
[0011] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein, in the VAR process: the melting vacuum degree is <0.5Pa, the filling ratio is set to 0.7, the melting rate is <5kg / min, helium cooling is used, and the oxygen content of the VAR ingot is 0%≤5ppm.
[0012] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein, in the second VAR process: the melting vacuum degree is <0.5Pa, the filling ratio is set to 0.6, the melting rate is <5kg / min, helium cooling is used, and the oxygen content of the VAR ingot is 0%≤5ppm.
[0013] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the chemical composition and gas content of the final smelted alloy are as follows: carbon C < 0.01 wt%, phosphorus P < 0.003 wt%, sulfur S < 0.001 wt%, silicon Si < 0.01 wt%, aluminum Al < 0.01 wt%, 0.2 wt% < manganese Mn < 0.4 wt%, 35.5 wt% < nickel Ni < 36.5 wt%, magnesium Mg ≤ 0.001 wt%, zirconium Zr ≤ 0.001 wt%, hafnium Hf ≤ 0.001 wt%, lead Pb < 0.001 wt%, tin Sn < 0.001 wt%, arsenic As < 0.001 wt%, antimony Sb < 0.001 wt%, bismuth Bi < 0.001 wt%, oxygen O < 0.001 wt%, nitrogen N < 0.0005 wt%, hydrogen H < 0.0003 wt%, with the balance being iron Fe; The proportions of magnesium, zirconium, hafnium, silicon, and aluminum are: (Zr+Hf+Mg) / (Al+Si)≤10%, Zr+Hf+Mg≤0.002wt%.
[0014] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the high-purity iron raw material contains carbon (C) < 0.01 wt%, oxygen (O) < 0.01 wt%, aluminum (Al) < 0.02 wt%, silicon (Si) < 0.02 wt%, phosphorus (P) < 0.003 wt%, sulfur (S) < 0.002 wt%, zirconium (Zr) < 0.001 wt%, hafnium (Hf) < 0.001 wt%, magnesium (Mg) < 0.001 wt%, and iron (Fe) ≥ 99.932 wt%.
[0015] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the high-purity nickel raw material contains carbon (C) < 0.002 wt%, oxygen (O) < 0.01 wt%, aluminum (Al) < 0.01 wt%, silicon (Si) < 0.01 wt%, phosphorus (P) < 0.001 wt%, sulfur (S) < 0.001 wt%, zirconium (Zr) < 0.001 wt%, hafnium (Hf) < 0.001 wt%, magnesium (Mg) < 0.001 wt%, and Ni ≥ 99.963 wt%.
[0016] Secondly, embodiments of the present invention provide a metal mask, which is produced by the metal mask production method for OLED pixel deposition.
[0017] Beneficial effects: This invention provides a method for producing a metal mask for OLED pixel deposition, comprising the following steps: preparing high-purity iron and high-purity nickel raw materials, wherein the content of high-purity iron is between 63.5% and 64.5%, and the content of high-purity nickel is between 35.5% and 36.5%; processing the raw materials using a VIM+PESR+VAR triple smelting process; VIM process: melting vacuum degree < 5 Pa, melting temperature between 1480℃ and 1520℃, refining temperature between 1530℃ and 1570℃, refining time set between 28 and 32 minutes, vacuum degree < 0.5 Pa at the end of refining, and oxygen content of VIM ingot ≤ 0%. 15ppm; PESR process: using an inert protective atmosphere, the filling ratio is set between 0.5-0.8, the current is set between 9kA-14.5kA, the voltage is set between 55V-60V, the electroslag material CaF2:Al2O3:CaO=50wt%-80wt%:10wt%-25wt%:10wt%-25wt%, the oxygen content of PESR ingot is 0%≤15ppm; VAR process: melting vacuum degree <0.5Pa, the filling ratio is set between 0.6-0.9, the melting rate is <5kg / min, helium cooling is used, the oxygen content of VAR ingot is 0%≤5ppm.
[0018] Specifically, metal mask plates produced using the above-mentioned production methods can significantly eliminate pinhole defects.
[0019] This invention provides a metal mask, manufactured using the OLED pixel deposition metal mask manufacturing method. The metal mask offers the advantages described above compared to existing technologies, which will not be elaborated further here. Attached Figure Description
[0020] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0021] Figure 1 Microscopic image of a metal mask produced by a metal mask production method for OLED pixel deposition provided in an embodiment of the present invention; Figure 2 Microscopic images of metal photomasks produced using existing technology. Detailed Implementation
[0022] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0023] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0025] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0026] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings.
[0027] This embodiment provides a method for producing a metal mask for OLED pixel deposition, including the following steps: preparing high-purity iron and high-purity nickel raw materials, with the high-purity iron content between 63.5% and 64.5% and the high-purity nickel content between 35.5% and 36.5%; processing the raw materials using a VIM+PESR+VAR triple smelting process; VIM process: melting vacuum degree < 5 Pa, melting temperature between 1480℃ and 1520℃, refining temperature between 1530℃ and 1570℃, refining time set between 28 and 32 minutes, vacuum degree < 0.5 Pa at the end of refining, and oxygen content of VIM ingot 0%. ≤15ppm; PESR process: using an inert protective atmosphere, the filling ratio is set between 0.5-0.8, the current is set between 9kA-14.5kA, the voltage is set between 55V-60V, the electroslag material CaF2:Al2O3:CaO=50wt%-80wt%:10wt%-25wt%:10wt%-25wt%, the oxygen content of PESR ingot is 0%≤15ppm; VAR process: melting vacuum degree <0.5Pa, the filling ratio is set between 0.6-0.9, the melting rate is <5kg / min, helium cooling is used, the oxygen content of VAR ingot is 0%≤5ppm.
[0028] Specifically, metal mask plates produced using the above-mentioned production methods can significantly eliminate pinhole defects.
[0029] The content of high-purity iron can be set to 63.5% and the content of high-purity nickel can be set to 36.5%, or the content of high-purity iron can be set to 64.5% and the content of high-purity nickel can be set to 35.5%.
[0030] The high-purity iron raw material contains carbon (C) < 0.01 wt%, oxygen (O) < 0.01 wt%, aluminum (Al) < 0.02 wt%, silicon (Si) < 0.02 wt%, phosphorus (P) < 0.003 wt%, sulfur (S) < 0.002 wt%, zirconium (Zr) < 0.001 wt%, hafnium (Hf) < 0.001 wt%, magnesium (Mg) < 0.001 wt%, and iron (Fe) ≥ 99.932 wt%. The high-purity nickel raw material contains carbon (C) < 0.002 wt%, oxygen (O) < 0.01 wt%, aluminum (Al) < 0.01 wt%, silicon (Si) < 0.01 wt%, phosphorus (P) < 0.001 wt%, sulfur (S) < 0.001 wt%, zirconium (Zr) < 0.001 wt%, hafnium (Hf) < 0.001 wt%, magnesium (Mg) < 0.001 wt%, and Ni ≥ 99.963 wt%.
[0031] The metal mask production method for OLED pixel deposition provided in this embodiment can use a triple smelting process of VIM (vacuum induction melting) + PESR (protective atmosphere electroslag remelting) + VAR (vacuum arc remelting) to process raw materials, or it can use a VIM+PESR+VAR+VAR smelting process to process raw materials.
[0032] Specifically, when using the VIM+PESR+VAR triple smelting process to process high-purity iron and high-purity nickel raw materials, in the VIM process: the melting vacuum degree is <5Pa, the melting temperature is set to 1500℃, the refining temperature is set to 1550℃, the refining time is set to 30 minutes, the vacuum degree at the end of refining is <0.5Pa, and the oxygen content of the VIM ingot is 0%≤15ppm. In the PESR process: an argon protective atmosphere is used, the filling ratio is set to 0.7, the current is set to 12kA, the voltage is set to 55V, and the electroslag material CaF2:Al2O3:CaO = 60wt%:20wt%:20wt%, the oxygen content of the PESR ingot is 0%≤15ppm. In the VAR process: the melting vacuum degree is <0.5Pa, the filling ratio is set to 0.7, the melting rate is <5kg / min, helium cooling is used, and the oxygen content of the VAR ingot is 0%≤5ppm.
[0033] The VIM process can be configured with a melting vacuum of 1 Pa, 3 Pa, or 4 Pa; a melting temperature of 1480℃, 1500℃, or 1520℃; a refining temperature of 1530℃, 1550℃, or 1570℃; and a refining time of 28 minutes, 30 minutes, or 32 minutes.
[0034] The PESR process uses an inert protective atmosphere, and the filling ratio can be set to 0.5, 0.6 or 0.8; the current can be set to 9kA, 11kA or 14.5kA; the voltage can be set to 55V, 58V or 60V; the weight ratio of the electroslag material CaF2, Al2O3 and CaO can be set to 8:1:1 or 5:2.5:2.5.
[0035] The VAR process has a melting vacuum degree of <0.5Pa, and the filling ratio can be set to 0.6, 0.75 or 0.9; the melting rate can be set to 3kg / min, 4kg / min or 5kg / min.
[0036] Specifically, when using the VIM+PESR+VAR+VAR smelting process to process high-purity iron and high-purity nickel raw materials, in the VIM process: the melting vacuum degree is <5Pa, the melting temperature is set to 1500℃, the refining temperature is set to 1550℃, the refining time is set to 30 minutes, the vacuum degree at the end of refining is <0.5Pa, and the oxygen content of the VIM ingot is 0%≤15ppm. In the PESR process: an argon protective atmosphere is used, the filling ratio is set to 0.7, the current is set to 12kA, the voltage is set to 55V, and the electroslag material CaF2:Al2O3:CaO = 60wt%:20wt%:20wt%, the oxygen content of the PESR ingot is 0%≤15ppm. In the first VAR process: the melting vacuum degree is <0.5Pa, the filling ratio is set to 0.7, the melting rate is <5kg / min, helium cooling is used, and the oxygen content of the VAR ingot is 0%≤5ppm. In the second VAR process: the melting vacuum degree is <0.5Pa, the filling ratio is set to 0.6, the melting rate is <5kg / min, helium cooling is used, and the oxygen content of the VAR ingot is 0%≤5ppm.
[0037] The chemical composition and gas content of the iron-nickel alloy after final smelting via VIM+PESR+VAR or VIM+PESR+VAR+VAR are as follows: Carbon (C) < 0.01 wt%, Phosphorus (P) < 0.003 wt%, Sulfur (S) < 0.001 wt%, Silicon (Si) < 0.01 wt%, Aluminum (Al) < 0.01 wt%, Manganese (Mn) < 0.4 wt%, Nickel (Ni) < 36.5 wt%, Magnesium (Mg) ≤ 0.001 wt%, Zirconium (Zr) ≤ 0.001 wt%. Hafnium (Hf) ≤ 0.001 wt%, Lead (Pb) < 0.001 wt%, Tin (Sn) < 0.001 wt%, Arsenic (As) < 0.001 wt%, Antimony (Sb) < 0.001 wt%, Bismuth (Bi) < 0.001 wt%, Oxygen (O) < 0.001 wt%, Nitrogen (N) < 0.0005 wt%, Hydrogen (H) < 0.0003 wt%, with the balance being Iron (Fe); the proportions of magnesium, zirconium, hafnium, silicon, and aluminum are: (Zr + Hf + Mg) / (Al + Si) ≤ 10%, Zr + Hf + Mg ≤ 0.002 wt%.
[0038] Among them, ZrO, HfO, and MgO exhibit better thermal stability during smelting than Al2O3 and SiO2 inclusions. Zr, Hf, and Mg form oxides with oxygen first and are not easily decomposed. Furthermore, they are small in size (3μm-6μm), do not agglomerate, and are dispersed in the material, easily causing pinhole defects. Therefore, controlling the proportions of magnesium, zirconium, hafnium, silicon, and aluminum elements is crucial to ensure that inclusions are predominantly larger Al2O3 and SiO2 inclusions (6μm-10μm in size). Controlling the oxygen (O) content also reduces the total number of inclusions, thereby minimizing other porosity defects.
[0039] As shown in Tables 1 and 2 below, Examples 1 and 2 describe the processing of raw materials using the VIM+PESR+VAR triple smelting process. Comparative Examples 1 and 2 describe the processing of raw materials using the existing VIM+PESR smelting process.
[0040]
[0041] Table 1
[0042] Table 2 See Figure 1 and Figure 2 As shown in Tables 1 and 2, the metal mask produced by the metal mask production method for OLED pixel deposition provided in this embodiment can significantly reduce the defect rates of other defects, such as hole breakage and pinhole.
[0043] This embodiment provides a metal mask that is manufactured using a metal mask manufacturing method for OLED pixel deposition.
[0044] Specifically, the metal mask provided in this embodiment has the advantages of the above-mentioned metal mask production method for OLED pixel deposition compared with the prior art, which will not be elaborated here.
[0045] Specifically, the composition of the metal mask produced by the OLED pixel deposition metal mask manufacturing method includes: carbon (C) < 0.01 wt%, phosphorus (P) < 0.003 wt%, sulfur (S) < 0.001 wt%, silicon (Si) < 0.01 wt%, aluminum (Al) < 0.01 wt%, manganese (Mn) < 0.4 wt%, nickel (Ni) < 35.5 wt%, magnesium (Mg) ≤ 0.001 wt%, zirconium (Zr) ≤ 0.001 wt%, and hafnium (Hf) ≤ 0.001 wt%. t%, Lead (Pb) < 0.001wt%, Tin (Sn) < 0.001wt%, Arsenic (As) < 0.001wt%, Antimony (Sb) < 0.001wt%, Bismuth (Bi) < 0.001wt%, Oxygen (O) < 0.001wt%, Nitrogen (N) < 0.0005wt%, Hydrogen (H) < 0.0003wt%, Balance is Iron (Fe); Proportion of magnesium, zirconium, hafnium, silicon, and aluminum: (Zr + Hf + Mg) / (Al + Si) ≤ 10%, Zr + Hf + Mg ≤ 0.002wt%.
[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A method for producing a metal mask plate for OLED pixel deposition, characterized by, It includes the following steps: Prepare high-purity iron and high-purity nickel raw materials. The content of high-purity iron is between 63.5% and 64.5%, and the content of high-purity nickel is between 35.5% and 36.5%. Process the raw materials using the VIM+PESR+VAR triple smelting process. VIM process: The melting vacuum degree < 5 Pa, the melting clearing temperature is between 1480 °C and 1520 °C, the refining temperature is between 1530 °C and 1570 °C, the refining time is set between 28 and 32 minutes, the vacuum degree at the end of refining < 0.5 Pa, and the oxygen content O% of the VIM ingot ≤ 15 ppm. PESR process: Use an inert protective atmosphere, the filling ratio is set between 0.5 and 0.8, the current is set between 9 kA and 14.5 kA, the voltage is set between 55 V and 60 V, the electro-slagging material CaF2:Al2O3:CaO = 50wt%-80wt%:10wt%-25wt%:10wt%-25wt%, and the oxygen content O% of the PESR ingot ≤ 15 ppm. VAR process: The melting vacuum degree < 0.5 Pa, the filling ratio is set between 0.6 and 0.9, the melting speed < 5 kg / min, and helium cooling is used. The oxygen content O% of the VAR ingot ≤ 5 ppm.
2. The method of claim 1, wherein the method further comprises: Process the raw materials using the VIM+PESR+VAR+VAR smelting process.
3. The method for producing a metal mask plate for OLED pixel deposition according to claim 1 or 2, characterized in that, In the VIM process: The melting vacuum degree < 5 Pa, the melting clearing temperature is set at 1500 °C, the refining temperature is set at 1550 °C, the refining time is set at 30 minutes, the vacuum degree at the end of refining < 0.5 Pa, and the oxygen content O% of the VIM ingot ≤ 15 ppm.
4. The method for producing a metal mask plate for OLED pixel deposition according to claim 1 or 2, characterized in that, In the PESR process: Use an argon protective atmosphere, the filling ratio is set at 0.7, the current is set at 12 kA, the voltage is set at 55 V, and the electro-slagging material CaF2:Al2O3:CaO = 60wt%:20wt%:20wt%. The oxygen content O% of the PESR ingot ≤ 15 ppm.
5. The method for producing a metal mask plate for OLED pixel deposition according to claim 1 or 2, wherein In the VAR process: The melting vacuum degree < 0.5 Pa, the filling ratio is set at 0.7, the melting speed < 5 kg / min, and helium cooling is used. The oxygen content O% of the VAR ingot ≤ 5 ppm.
6. The method of claim 5, wherein the method further comprises: In the second VAR process: The melting vacuum degree < 0.5 Pa, the filling ratio is set at 0.6, the melting speed < 5 kg / min, and helium cooling is used. The oxygen content O% of the VAR ingot ≤ 5 ppm.
7. The method for producing a metal mask plate for OLED pixel deposition according to claim 1 or 2, wherein The chemical composition and gas content in the alloy after final melting: C < 0.01wt%, P < 0.003wt%, S < 0.001wt%, Si < 0.01wt%, Al < 0.01wt%, 0.2wt% < Mn < 0.4wt%, 35.5wt% < Ni < 36.5wt%, Mg ≤ 0.001wt%, Zr ≤ 0.001wt%, Hf ≤ 0.001wt%, Pb < 0.001wt%, Sn < 0.001wt%, As < 0.001wt%, Sb < 0.001wt%, Bi < 0.001wt%, O < 0.001wt%, N < 0.0005wt%, H < 0.0003wt%, and the balance is Fe; The proportions of magnesium, zirconium, hafnium, silicon, and aluminum are: (Zr+Hf+Mg) / (Al+Si)≤10%, Zr+Hf+Mg≤0.002wt%.
8. The method for producing a metal mask plate for OLED pixel deposition according to claim 1 or 2, wherein The high-purity iron raw material contains C < 0.01 wt%, O < 0.01 wt%, Al < 0.02 wt%, Si < 0.02 wt%, P < 0.003 wt%, S < 0.002 wt%, Zr < 0.001 wt%, Hf < 0.001 wt%, Mg < 0.001 wt%, and Fe ≥ 99.932 wt%.
9. The method for producing a metal mask plate for OLED pixel deposition according to claim 1 or 2, wherein The high-purity nickel raw material contains C < 0.002 wt%, O < 0.01 wt%, Al < 0.01 wt%, Si < 0.01 wt%, P < 0.001 wt%, S < 0.001 wt%, Zr < 0.001 wt%, Hf < 0.001 wt%, Mg < 0.001 wt%, and Ni ≥ 99.963 wt%.
10. A metal mask, characterized by Produced by the metal mask production method for OLED pixel deposition as described in any one of claims 1-9.