Atomic layer deposition coating equipment and battery piece deposition coating process

Abstract

This invention discloses an atomic layer deposition (ALD) coating equipment and a solar cell deposition coating process. The coating equipment includes a reaction chamber, and a carrier plate, a substrate, a spray plate, and an infrared heating sleeve disposed within the reaction chamber. The reaction chamber has an extraction port and multiple inlets at its rear end. The carrier plate is located at the lower part of the reaction chamber, and the substrate for loading solar cells is placed on the carrier plate, with an extraction zone at the bottom of the carrier plate. The spray plate and the infrared heating sleeve are both located at the top of the reaction chamber; the spray plate is connected to the inlets, and the infrared heating sleeve is connected to an external controller. This invention employs a "cavity upper sidewall spray inlet" method, shortening the inlet travel and eliminating the concentration gradient of the reactant gas at the source, thereby achieving good film thickness uniformity across the entire batch. The in-situ annealing function is integrated into the reaction chamber, enabling the solar cell annealing process to be performed within the same reaction chamber, significantly improving production efficiency, simplifying the process, and reducing operating costs.

Description

Technical Field

[0001] This invention relates to the field of solar cell fabrication technology, specifically to an atomic layer deposition coating equipment and a cell deposition coating process. Background Technology

[0002] As battery efficiency increases, the requirements for surface passivation quality become extremely high. Alumina thin films, with their excellent field-effect passivation properties and good chemical passivation effects, have become a key passivation layer for achieving high-efficiency TOPCon and XBC batteries. Currently, UV degradation of battery modules is a pressing problem that needs to be solved. At the battery end, there is a tendency to appropriately increase the thickness of the alumina thin film prepared by atomic layer deposition (ALD) to improve the battery's resistance to UV degradation. However, the trend towards thicker films also presents two major challenges to the process capabilities of existing mass-produced tubular ALD equipment.

[0003] One challenge is film thickness uniformity: Currently, the industry's commonly used mass-production tubular ALD equipment employs a continuous flow mode of "gas inlet at the furnace mouth and gas outlet at the furnace tail." As the reaction precursors flow from the inlet to the outlet, continuous consumption and decomposition create an axial concentration gradient. This results in uneven reactant concentrations exposed to the cells at different locations within the furnace tube. Combined with limited purging time, this leads to a decrease in uniformity across the entire batch. When depositing thicker films, this non-uniformity accumulates and amplifies, severely impacting cell performance and yield.

[0004] Another significant risk is the risk of film bursting: With increased alumina thickness, hydrogen in the film requires longer annealing times and higher annealing temperatures to release; otherwise, film bursting can easily occur during the rapid heating process in screen sintering. However, longer annealing times limit the production capacity of PECVD, and excessively high temperatures depositing silicon nitride on the front side can negatively impact cell efficiency. Summary of the Invention

[0005] The technical problem this invention aims to solve is that the existing tubular ALD equipment, which mostly uses the "furnace inlet gas inlet, furnace tail gas outlet" mode, causes a concentration gradient in the precursor along the gas flow direction. Due to capacity limitations, the nitrogen purging time cannot be too long, which easily leads to problems such as thicker alumina at the furnace inlet and thinner alumina at the furnace tail, resulting in unevenness between wafers. Furthermore, if the alumina at the furnace inlet is too thick, the hydrogen in the alumina will not be released sufficiently during the annealing time in the PECVD coating process. This can easily lead to the rapid release of hydrogen in the film layer during the rapid heating in the subsequent sintering process, causing the film to burst. The invention provides an atomic layer deposition coating equipment and a solar cell deposition coating process that is compact, has high gas distribution uniformity, and is conducive to improving coating quality.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: An atomic layer deposition (ALD) coating apparatus includes a reaction chamber, and a carrier plate, a fixture, a spray plate, and an infrared heating sleeve disposed within the reaction chamber. The reaction chamber has an extraction port and multiple inlets at its tail end. The carrier plate is located at the lower part of the reaction chamber, and a fixture for loading solar cells is placed on the carrier plate. An extraction zone is located at the bottom of the carrier plate. The spray plate and the infrared heating sleeve are both located at the top of the reaction chamber. The spray plate is connected to the inlets, and the infrared heating sleeve is connected to an external controller. During the deposition process, process gas enters the spray plate through the inlets, is then evenly sprayed into the reaction chamber, and exits through the extraction zone and the extraction port. After the deposition process is completed, the external controller activates the infrared heating sleeve to perform in-situ annealing of the deposited solar cells.

[0007] As a further improvement of the present invention, the number of air inlets is two, one of which is used to transport the mixture of precursor and carrier gas, and the other is used to transport water vapor.

[0008] As a further improvement of the present invention, the spray plate is provided with two groups of spray holes that are independent of each other and arranged alternately. One group of spray holes is used to spray the mixed gas of the precursor and the carrier gas, and the other group of spray holes is used to spray water vapor.

[0009] As a further improvement of the present invention, the area of ​​the extraction zone is equivalent to the projected area of ​​the carrier on the carrier plate.

[0010] As a further improvement of the present invention, the extraction zone is provided with multiple rows of extraction holes. Along the front end to the rear end of the reaction chamber, the diameter of the extraction holes decreases sequentially, and the distribution density of the extraction holes increases sequentially.

[0011] As a further improvement of the present invention, the vehicle adopts an open structure without side plates and cover plates.

[0012] As a further improvement of the present invention, the infrared heating sleeve is multiple and is respectively arranged on both sides of the spray plate.

[0013] As a general technical concept, the present invention also provides a battery cell deposition coating process based on the above-mentioned atomic layer deposition coating equipment, including the following steps: Step S1, Process Preparation and Loading: Step S11: Use a robotic arm to automatically load the battery cells to be processed onto the carrier; Step S12: Send the carrier into the reaction chamber, close and lock the chamber door; Step S13: Start the vacuum pump unit to evacuate the reaction chamber to a vacuum. Step S14: Heat the reaction chamber to the preset reaction temperature. After the temperature of the reaction chamber stabilizes at the set process temperature, keep the battery cells at the preset temperature. Step S2, film deposition: Step S21: According to the preset formula, open the control valves of the precursor and the carrier gas in the machine system respectively, and open the corresponding air inlet at the tail end of the reaction chamber. Spray the mixed gas of the precursor and the carrier gas directly onto the surface of the battery cell in a pulse form through the spray plate to achieve the deposition of the battery cell coating. Step S22: In the machine system, close the control valve of the precursor, keep the control valve of the carrier gas open, and inject carrier gas into the reaction chamber to remove the residual precursor and reaction byproducts in the chamber. Step S23: According to the preset formula, open the control valve of water vapor in the machine system and open the corresponding air inlet at the tail end of the reaction chamber. Spray water vapor evenly onto the surface of the battery cell in a pulsed form through the spray plate, so that water molecules react with the chemically adsorbed precursor layer to generate a deposited film. Step S24: In the machine system, close the control valve for water vapor and open the control valve for carrier gas to inject carrier gas into the reaction chamber to remove residual water vapor and reaction byproducts from the chamber. Step S25, repeat steps S21 to S24, to continuously deposit thin films; Step S3, in-situ infrared annealing: Step S31: After the deposition cycle is completed and the reaction chamber is purged, the infrared heating sleeve is activated to raise the temperature of the reaction chamber and maintain the temperature. Step S32: After the heat preservation is completed, turn off the infrared heating sleeve, fill the reaction chamber with protective gas until the pressure of the reaction chamber returns to normal pressure, open the reaction chamber, and use a robotic arm to unload the battery cells that have completed the deposition and annealing treatment.

[0014] As a further improvement of the present invention, in step S21, the flow rate of the mixture of precursor and carrier gas is controlled at 300-6000 sccm, and the pulse time is 2-10 s; in step S22, the purging flow rate of the carrier gas is 300-6000 sccm, and the purging time is 5-20 s; in step S23, the flow rate of water vapor is controlled at 300-6000 sccm, and the pulse time is 2-10 s; in step S24, the purging flow rate of the carrier gas is 300-6000 sccm, and the purging time is 5-20 s.

[0015] As a further improvement of the present invention, in step S31, the temperature of the reaction chamber is raised to 400-600°C and kept at that temperature for 1-30 minutes.

[0016] Compared with the prior art, the advantages of the present invention are as follows: The atomic layer deposition (ALD) coating equipment and solar cell deposition process of this invention replace the traditional single-direction furnace inlet gas intake mode with an upper-side spray air intake system. The reaction precursor is directly and uniformly delivered to the surface of the solar cells throughout the entire carrier area via spray plates distributed at the top of the reaction chamber. This fundamentally eliminates gas concentration gradients caused by gas flow path consumption, ensuring the uniformity of the entire batch of solar cells. Simultaneously, an infrared auxiliary heating annealing module is integrated on the upper side of the reaction chamber. Controlled by an external controller, it is turned off during the deposition stage and turned on during the annealing stage. This allows the equipment to immediately initiate an in-situ annealing process within the reaction chamber after alumina deposition. Infrared thermal radiation can penetrate the specially designed open carrier, uniformly heating the solar cells without obstruction, releasing adsorbed hydrogen in the film layer, and significantly reducing the risk of film explosion. This invention successfully integrates the two key processes of "uniform deposition" and "efficient annealing" into a single machine with minimal equipment modification costs. While improving film quality and reliability, it significantly simplifies the production process and increases capacity and yield. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the cross-sectional structure of the atomic layer deposition coating equipment in a specific embodiment of the present invention; Figure 2 This is a schematic diagram of the three-dimensional structure of the atomic layer deposition coating equipment in a specific embodiment of the present invention; Figure 3 This is a schematic diagram illustrating the assembly structure principle of the carrier and the carrier plate in a specific embodiment of the present invention; Figure 4 This is a schematic diagram of the structural principle of the carrier plate in a specific embodiment of the present invention.

[0018] Legend: 1. Reaction chamber; 2. Carrier plate; 3. Carrier; 4. Evacuation port; 5. Spray plate; 6. Infrared heating sleeve; 7. Air inlet; 8. Battery cell; 9. Support column; 21. Evacuation hole; 22. Evacuation zone. Detailed Implementation

[0019] The present invention will be further described below with reference to the accompanying drawings and specific preferred embodiments, but this does not limit the scope of protection of the present invention.

[0020] In the description of this invention, it should be understood that the terms "side", "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0021] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more unless otherwise explicitly specified.

[0022] Example like Figure 1 and Figure 2 As shown, the atomic layer deposition coating equipment of the present invention includes a reaction chamber 1, and a carrier plate 2, a support 3, a spray plate 5, and an infrared heating sleeve 6 disposed within the reaction chamber 1. It is understood that the front end and the rear end of the reaction chamber 1 are respectively designated as the furnace opening and furnace tail. Independently temperature-controlled heaters are integrated on the upper, lower, and left and right side walls of the reaction chamber 1. A high-precision PID control system coordinates and adjusts the heating power of each area to ensure that the temperature uniformity within the entire process area is stable within ±5℃, providing a strictly controllable temperature environment for atomic layer deposition.

[0023] The reaction chamber 1 has an extraction port 4 and an inlet port 7 at its tail end. The extraction port 4 is connected to a vacuum pump unit via a pipeline to evacuate the reaction chamber 1 and maintain stable process pressure. The inlet port 7 is connected to an external gas source via a pipeline to provide a controlled gas source for the deposition of the solar cell 8. The carrier plate 2 is set at the lower part of the reaction chamber 1 by a support column 9. The carrier 3 that holds the solar cell 8 is placed on the carrier plate 2, and the bottom of the carrier plate 2 has an extraction zone 22. The extraction port 4 is located below the carrier plate 2, so that the process gas in the reaction chamber 1 flows through the extraction zone 22 to the extraction port 4, ensuring that the process gas flows evenly across the outer surface of the solar cell 8. The spray plate 5 and two infrared heating sleeves 6 are both set at the top of the reaction chamber 1. The spray plate 5 is connected to the inlet port 7. The infrared heating sleeves 6 are symmetrically arranged on the left and right sides of the spray plate 5, and the infrared heating sleeves 6 are connected to an external controller to achieve independent operation of the infrared heating sleeves 6. The infrared heating sleeve 6 has a power range of 3kW to 12kW. Its on / off state is independently controlled by an external controller according to the process sequence, so as to turn it off during the deposition stage and turn it on during the annealing stage, thereby providing in-situ annealing treatment for the deposited solar cell 8.

[0024] When the solar cell 8 undergoes the deposition process, the process gas enters the spray plate 5 through the air inlet 7, and is then evenly sprayed into the reaction chamber 1, and discharged from the extraction zone 22 and the extraction port 4. After the deposition coating process of the solar cell 8 is completed, the external controller activates the infrared heating sleeve 6 to achieve in-situ annealing of the deposited solar cell 8.

[0025] To address the inherent axial concentration gradient problem in current mass-production tubular ALD equipment due to the "furnace inlet gas, furnace tail gas extraction" mode, this embodiment proposes an innovative gas inlet and extraction system design: a spray plate 5 integrated on the upper side of the reaction chamber 1 is used for gas inlet, and the bottom extraction structure of the reaction chamber 1 is optimized to achieve uniform airflow distribution. The gas inlet 7 is directly connected to the spray plate 5, and the reactant gas is vertically and uniformly delivered to the entire process area through micropores on the spray plate 5 in a spray manner, thus avoiding the formation of an axial concentration gradient from the source.

[0026] like Figure 2 As shown, there are two air inlets 7. One air inlet 7 is used to transport the mixture of precursor and carrier gas, and the other air inlet 7 is used to transport water vapor.

[0027] In this embodiment, the spray plate 5 has two independent and alternately arranged spray hole groups. One spray hole group is used to spray the mixture of precursor and carrier gas, and the other spray hole group is used to spray water vapor. After passing through the spray plate 5, the different reaction precursors are transported to the surface of the solar cell 8 in a highly uniform manner. Furthermore, the two spray hole groups are arranged alternately in rows, with a hole diameter of 1-3 mm. The dense and uniform distribution ensures that the reaction gas can cover the entire process area, thereby ensuring film thickness uniformity and facilitating daily maintenance.

[0028] like Figure 1 and Figure 3 As shown, the area of ​​the extraction zone 22 is comparable to the projected area of ​​the carrier 3 on the carrier plate 2, so as to ensure the consistency of the process gas path from entering to exiting the reaction chamber 1, reduce the diffusion of gas to other parts of the reaction chamber 1, thereby improving the gas utilization rate, and also improving the uniformity of the distribution of process gas in the carrier 3.

[0029] like Figure 4 As shown, the extraction zone 22 is provided with multiple rows of extraction holes 21 to form an extraction hole array. Along the front end to the rear end of the reaction chamber 1, the diameter of the extraction holes 21 decreases sequentially, while the distribution density of the extraction holes 21 increases sequentially. By adjusting the hole diameter and distribution density along the gas inlet direction (from the furnace mouth to the furnace tail), the pressure loss of the airflow in the longitudinal direction is compensated, thereby achieving consistent extraction speed and uniform flow field at all positions within the reaction chamber 1.

[0030] Specifically, near the furnace tail area, the diameter of the extraction holes 21 is smaller (φ3~15mm) and the spacing is 5~40mm to alleviate the problem of excessively fast extraction speed at the furnace tail extraction end; in the middle area of ​​the cavity, the diameter of the extraction holes 21 is moderately increased (φ5~30mm) and the distribution density is slightly reduced by 10~50mm to balance the extraction efficiency. From the furnace tail to the furnace mouth, the size or spacing of the extraction holes 21 tends to increase; near the furnace mouth area, a larger diameter and lower distribution density are used to enhance the far-end extraction capacity. The gradient design of the extraction hole array ensures that the reaction gas passes through the reaction cavity 1 uniformly without dead zones, and ensures that reaction by-products are fully removed after the process is completed.

[0031] like Figure 1 and Figure 3 As shown, the carrier 3 adopts an open structure without side plates and cover plates. In conjunction with the infrared heating sleeve 6, it creates an unobstructed thermal radiation environment to eliminate heat transfer obstacles, ensure a uniform temperature field during annealing, and enable infrared radiation to uniformly cover the surface of the battery cell 8, thus ensuring the process quality and reliability of in-situ annealing.

[0032] To address the technical limitations of current mass-production tubular ALD equipment in achieving in-situ annealing, this embodiment proposes an integrated heating solution: two infrared heating sleeves 6 are integrated and installed on the upper side of the reaction chamber 1, along with an open carrier structure without sidewalls or covers to eliminate heat transfer obstacles and ensure that infrared radiation can uniformly cover the surface of the solar cell 8. The heating system is coordinated and controlled by an external controller, keeping the heating sleeves closed during the atomic layer deposition stage and automatically opening them after entering the annealing process. This achieves seamless in-situ connection between the deposition and annealing of the solar cell 8 within the same chamber, effectively improving process integration and thin film quality stability.

[0033] In this embodiment, the battery cell deposition coating process is performed in an atomic layer deposition coating equipment, including the following steps: Step S1, Process Preparation and Loading: Step S11: The robotic arm automatically loads the battery cells 8 to be processed onto the carrier 3. The carrier 3 has no side walls or top plate, ensuring that the precursor and heat radiation can pass through without obstruction.

[0034] Step S12: Send the carrier 3 into the reaction chamber 1, and close and lock the chamber door of the reaction chamber 1.

[0035] Step S13: Start the vacuum pump group to evacuate the reaction chamber 1 to a vacuum to eliminate interference from air and water vapor.

[0036] Step S14: Heat the reaction chamber 1 to the preset reaction temperature. After the temperature of the reaction chamber 1 stabilizes at the set process temperature, keep the battery cell 8 at the preset temperature to stabilize it at the ALD deposition temperature.

[0037] Step S2, film deposition: Step S21: According to the preset formula, open the control valves for the trimethylaluminum (TMA) precursor and nitrogen in the machine system, and open the corresponding air inlet 7 at the tail end of the reaction chamber 1. The mixed gas of trimethylaluminum (TMA) precursor and nitrogen is sprayed directly onto the surface of the solar cell 8 through the spray plate 5 in a pulsed manner to achieve film deposition on the solar cell 8. Specifically, the flow rate of the precursor and carrier gas mixture is controlled at 3000 sccm, and the pulse time is 8s.

[0038] Step S22: In the instrument system, close the control valve for the trimethylaluminum (TMA) precursor, keep the nitrogen control valve open, and inject high-purity nitrogen into reaction chamber 1 to remove residual precursors and reaction byproducts from the chamber. Specifically, the nitrogen purging flow rate is 2000 sccm, and the purging time is 15 s.

[0039] Step S23: According to the preset formula, open the water vapor control valve in the machine system and open the corresponding air inlet 7 at the tail end of the reaction chamber 1. Spray water vapor evenly onto the surface of the battery cell 8 through the spray plate 5 in a pulsed manner, so that water molecules react with the chemically adsorbed TMA layer to generate a deposited thin film. Specifically, the water vapor flow rate is controlled at 3000 sccm and the pulse time is 8 s.

[0040] Step S24: In the machine system, close the water vapor control valve and open the nitrogen control valve to inject high-purity nitrogen into reaction chamber 1 to remove residual water vapor and reaction byproducts. Specifically, the nitrogen purging flow rate is 2000 sccm, and the purging time is 15s.

[0041] Step S25 repeats steps S21 to S24 to deposit an ALD film in cycles. Each cycle grows an alumina film of approximately 0.14 nm. The target film thickness can be obtained by setting the number of cycles.

[0042] Step S3, in-situ infrared annealing: Step S31: After the deposition cycle is completed and the reaction chamber 1 is cleaned, the infrared heating sleeve 6 is activated to rapidly raise the temperature of the reaction chamber 1 to 400-600℃ and maintain the temperature for 20 minutes.

[0043] Step S32: After the heat preservation is completed, turn off the infrared heating sleeve 6, fill the reaction chamber 1 with protective gas until the pressure of the reaction chamber 1 returns to normal pressure, open the reaction chamber 1, and use a robotic arm to unload the battery cell 8 that has completed the deposition and annealing treatment.

[0044] The coating equipment in this embodiment integrates an "infrared auxiliary heating device" and an "open carrier," which allows the deposited thick alumina film to undergo uniform in-situ annealing immediately within the same sealed cavity. This releases residual hydrogen in the film during the ALD process, effectively avoiding the need for hydrogen removal through annealing in the subsequent PECVD process. This significantly reduces the thermal budget requirements of the PECVD process, thereby ensuring the overall production rhythm.

[0045] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principle of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. An atomic layer deposition coating apparatus, characterized in that, The reaction chamber includes a reaction chamber (1), a carrier plate (2), a carrier (3), a spray plate (5), and an infrared heating sleeve (6) disposed within the reaction chamber (1). The reaction chamber (1) has an exhaust port (4) and multiple air inlets (7) at its tail end. The carrier plate (2) is disposed at the lower part of the reaction chamber (1), and the carrier (3) for loading the battery cells (8) is placed on the carrier plate (2). The bottom of the carrier plate (2) has an exhaust zone (22). The spray plate (5) and the infrared heating sleeve (6) are both disposed within the reaction chamber. At the top of the body (1), the spray plate (5) is connected to the air inlet (7), and the infrared heating sleeve (6) is connected to the external controller. When the battery cell (8) is deposited, the process gas enters the spray plate (5) through the air inlet (7), and is then sprayed evenly into the reaction chamber (1), and discharged from the extraction zone (22) and the extraction port (4). After the deposition coating process of the battery cell (8) is completed, the external controller starts the infrared heating sleeve (6) to realize the in-situ annealing of the battery cell (8) after deposition coating.

2. The atomic layer deposition coating equipment according to claim 1, characterized in that, The number of air inlets (7) is two, one of which is used to transport the mixture of precursor and carrier gas, and the other is used to transport water vapor.

3. The atomic layer deposition coating equipment according to claim 2, characterized in that, The spray plate (5) is provided with two independent and alternating spray hole groups. One spray hole group is used to spray the mixed gas of the precursor and the carrier gas, and the other spray hole group is used to spray water vapor.

4. The atomic layer deposition coating equipment according to claim 1, characterized in that, The area of ​​the extraction zone (22) is equivalent to the projected area of ​​the carrier (3) on the carrier plate (2).

5. The atomic layer deposition coating equipment according to claim 4, characterized in that, The extraction zone (22) is provided with multiple rows of extraction holes (21). Along the front end to the rear end of the reaction chamber (1), the diameter of the extraction holes (21) decreases sequentially, and the distribution density of the extraction holes (21) increases sequentially.

6. The atomic layer deposition coating apparatus according to any one of claims 1 to 5, characterized in that, The vehicle (3) adopts an open structure without side panels and cover plates.

7. The atomic layer deposition coating apparatus according to any one of claims 1 to 5, characterized in that, The infrared heating sleeve (6) consists of multiple tubes, which are respectively installed on both sides of the spray plate (5).

8. A cell deposition coating process based on the atomic layer deposition coating equipment according to any one of claims 1 to 7, characterized in that, Includes the following steps: Step S1, Process Preparation and Loading: Step S11: Use a robotic arm to automatically load the battery cells (8) to be processed onto the carrier (3); Step S12: Send the carrier (3) into the reaction chamber (1), and close and lock the chamber door of the reaction chamber (1); Step S13: Start the vacuum pump group to evacuate the reaction chamber (1) to a vacuum. Step S14: Heat the reaction chamber (1) to the preset reaction temperature. After the temperature of the reaction chamber (1) stabilizes at the set process temperature, keep the battery cell (8) at the preset temperature. Step S2, film deposition: Step S21: According to the preset formula, open the control valves of the precursor and the carrier gas in the machine system respectively, and open the corresponding air inlet (7) at the tail end of the reaction chamber (1) to spray the mixed gas of the precursor and the carrier gas directly onto the surface of the battery cell (8) in a pulse form through the spray plate (5) to achieve the coating deposition of the battery cell (8). Step S22: In the machine system, close the control valve of the precursor, keep the control valve of the carrier gas open, and inject the carrier gas into the reaction chamber (1) to remove the residual precursor and reaction byproducts in the chamber. Step S23: According to the preset formula, open the control valve of water vapor in the machine system and open the corresponding air inlet (7) at the tail end of the reaction chamber (1) to spray water vapor evenly onto the surface of the battery cell (8) through the spray plate (5) in a pulse form, so that water molecules react with the chemically adsorbed precursor layer to generate a deposited film. Step S24: In the machine system, close the control valve for water vapor, open the control valve for carrier gas, and inject carrier gas into the reaction chamber (1) to remove residual water vapor and reaction byproducts in the chamber. Step S25, repeat steps S21 to S24, to continuously deposit thin films; Step S3, in-situ infrared annealing: Step S31: After the deposition cycle is completed and the reaction chamber (1) is purged, the infrared heating sleeve (6) is started to raise the temperature of the reaction chamber (1) and keep it warm. Step S32: After the heat preservation is completed, turn off the infrared heating sleeve (6), fill the reaction chamber (1) with protective gas until the pressure of the reaction chamber (1) returns to normal pressure, open the reaction chamber (1), and use the robot arm to unload the battery cell (8) that has completed the deposition and annealing treatment.

9. The solar cell deposition coating process according to claim 8, characterized in that, In step S21, the flow rate of the precursor and carrier gas mixture is controlled at 300–6000 sccm, and the pulse time is 2–10 s; in step S22, the purging flow rate of the carrier gas is 300–6000 sccm, and the purging time is 5–20 s; in step S23, the flow rate of water vapor is controlled at 300–6000 sccm, and the pulse time is 2–10 s; in step S24, the purging flow rate of the carrier gas is 300–6000 sccm, and the purging time is 5–20 s.

10. The cell deposition coating process according to claim 8, characterized in that, In step S31, the temperature of the reaction chamber (1) is raised to 400-600°C and kept at that temperature for 1-30 minutes.

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