Multilayer electronic component
By introducing an interface layer between the body and the external electrode of a multilayer ceramic capacitor, the heat dissipation performance and reliability issues of MLCCs in the process of miniaturization and high capacitance are solved, achieving better heat dissipation and mechanical strength while maintaining excellent resistance characteristics.
Patent Information
- Application Number
- CN202511925696.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-12-24
- Filing Date
- 2025-12-19
- Publication Date
- 2026-06-26
AI Technical Summary
Multilayer ceramic capacitors (MLCCs) suffer from reduced heat dissipation and reliability issues during miniaturization and increasing capacitance, especially with severe heat generation at high current densities, leading to performance degradation and shortened lifespan.
An interface layer is introduced between the body and the external electrode of a multilayer electronic component. The interface layer is composed of an oxide containing a conductive metal and has a crystalline structure to improve heat dissipation and enhance bonding strength.
It improves the heat dissipation performance and mechanical strength of multilayer electronic components, while maintaining excellent equivalent series resistance (ESR) characteristics, preventing performance degradation due to interface defects.
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Figure CN122291296A_ABST
Abstract
Description
[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0195448, filed on December 24, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field
[0002] This disclosure relates to a multilayer electronic component. Background Technology
[0003] Multilayer ceramic capacitors (MLCCs, a type of multilayer electronic component) are chip capacitors that are mounted on printed circuit boards of various types of electronic products, such as video display devices (including liquid crystal displays (LCDs) and plasma display panels (PDPs)), computers, smartphones and mobile phones, as well as the circuits of on-board chargers (OBCs) and DC-DC converters in electric vehicles, and serve to charge or discharge.
[0004] Currently, with the miniaturization of electronic devices, there is a great need for the miniaturization and high integration of multilayer electronic components. Specifically, various attempts have been made to make multilayer ceramic capacitors (MLCCs), which are used as general-purpose electronic components, thinner and more capacitive.
[0005] As MLCCs become thinner and more capacitive, reliability issues with multilayer electronic components are becoming increasingly common. MLCCs can generate heat in most operating environments, and when this heat is not effectively dissipated, their performance may degrade or their lifespan may be shortened.
[0006] Specifically, in high-capacity and small-sized MLCCs, the problem of heat generation may become more prominent due to the increase in current density.
[0007] Traditionally, as a method for effectively dissipating heat from MLCCs, attempts have been made to use materials with high thermal conductivity in the dielectric layer or to modify the structure of the internal electrodes themselves.
[0008] When using a material with high thermal conductivity as the dielectric layer, the side effect of reduced capacitance per unit volume may occur because a separate ceramic additive should be added to the dielectric layer. Furthermore, since changing the structure of the inner electrode itself requires a shape change, this may not be suitable for mass production, and it may be difficult to ensure sufficient capacitance per unit volume. In addition, reliability issues may arise due to changes in the structure of the inner electrode and the dielectric layer.
[0009] Therefore, structural improvements to MLCCs are needed to enhance heat dissipation efficiency while mitigating reliability and capacity reduction. Summary of the Invention
[0010] One aspect of this disclosure is to alleviate the problem of reduced heat dissipation performance caused by structural defects in the interface between the external electrode and the main body.
[0011] One aspect of this disclosure is to alleviate the problem of reduced bonding strength between the body and the outer electrode when an interface layer is formed at the interface between the outer electrode and the body to improve heat dissipation performance.
[0012] However, the aspects of this disclosure are not limited to the foregoing and can be more readily understood in the process of describing specific exemplary embodiments of this disclosure.
[0013] A multilayer electronic component according to an example embodiment of the present disclosure may include: a body including a dielectric layer and an inner electrode disposed alternately with the dielectric layer; an outer electrode disposed on the body and connected to the inner electrode; and an interface layer disposed between the body and the outer electrode, wherein the interface layer comprises an oxide containing a conductive metal having a crystalline structure.
[0014] The advantage of this disclosure is that it provides a multilayer electronic component that has excellent heat dissipation performance while suppressing heat generation.
[0015] The advantage of this disclosure is that it provides a multilayer electronic component with excellent heat dissipation performance, as well as excellent mechanical strength and equivalent series resistance (ESR) characteristics.
[0016] However, the various advantages and effects of this disclosure are not limited to the foregoing and can be more readily understood in the process of describing specific exemplary embodiments of this disclosure. Attached Figure Description
[0017] The above and other aspects, features and advantages of this disclosure will be more clearly understood through the following specific embodiments in conjunction with the accompanying drawings, in which: Figure 1 This is a schematic perspective view of a multilayer electronic assembly according to an exemplary embodiment of the present disclosure; Figure 2 Schematic illustration along Figure 1 A cross-sectional view taken from line I-I'; Figure 3 Schematic illustration along Figure 1 A cross-sectional view taken from line II-II'; Figure 4 It is shown Figure 2 A schematic diagram of an enlarged view of region P; Figure 5 It is shown Figure 4 A schematic diagram of an enlarged view of region Q; Figure 6 This illustrates a multilayer electronic assembly according to another example embodiment, with... Figure 2 A schematic diagram of the corresponding cross-sectional view; Figure 7 It is shown Figure 6 A schematic diagram of an enlarged view of region R; Figure 8 This is an exploded perspective view showing the construction of the body according to an example embodiment; and Figure 9A and Figure 9B This is a schematic diagram illustrating a part of a method for manufacturing a multilayer electronic component according to an example embodiment. Detailed Implementation
[0018] In the following description, exemplary embodiments of the present disclosure will be illustrated with reference to the accompanying drawings. However, exemplary embodiments of the present disclosure may be exemplified in many different forms and should not be construed as being limited to the specific embodiments set forth herein. Furthermore, the exemplary embodiments disclosed herein are provided to illustrate the present disclosure more completely to those skilled in the art. Therefore, in the drawings, the shape and size of elements may be exaggerated for clarity, and the same reference numerals will always be used to denote the same elements.
[0019] Furthermore, for the sake of clarity in the accompanying drawings, details irrelevant to the description have been omitted, and since the dimensions (e.g., thicknesses) of the various components shown in the drawings are arbitrarily illustrated for ease of description, the disclosure is not limited thereto. Additionally, components having the same function within the same conceptual scope are described using the same reference numerals. Throughout the specification, unless otherwise stated, when a part "comprises" or "includes" a component, this means that the part does not exclude the inclusion of other components, and may also include other components.
[0020] In the accompanying drawings, the first direction can be defined as the direction along which the first inner electrode and the second inner electrode are alternately disposed and the dielectric layer is located between the first inner electrode and the second inner electrode, or the X direction. Among the second direction and the third direction perpendicular to the first direction, the second direction can be defined as the Y direction and the third direction can be defined as the Z direction.
[0021] Figure 1 This is a schematic perspective view of a multilayer electronic component according to an exemplary embodiment of the present disclosure.
[0022] Figure 2 Schematic illustration along Figure 1 The cross-sectional view taken from line I-I'.
[0023] Figure 3 Schematic illustration along Figure 1 The cross-sectional view taken from line II-II'.
[0024] Figure 4 It is shown Figure 2 A schematic diagram of an enlarged view of region P.
[0025] Figure 5 It is shown Figure 4 A schematic diagram of an enlarged view of region Q.
[0026] Figure 6 This illustrates a multilayer electronic assembly according to another example embodiment, with... Figure 2 A schematic diagram of the corresponding cross-sectional view.
[0027] Figure 7 It is shown Figure 6 A schematic diagram of an enlarged view of region R.
[0028] Figure 8 This is an exploded perspective view showing the construction of the body according to an example embodiment.
[0029] Figure 9A and Figure 9B This is a schematic diagram illustrating a part of a method for manufacturing a multilayer electronic component according to an example embodiment.
[0030] In the following text, refer to Figures 1 to 9B The present disclosure will describe in detail the multilayer electronic component 100 and its various variant examples according to exemplary embodiments of the present disclosure.
[0031] A multilayer electronic component 100 according to an exemplary embodiment of the present disclosure may include: a body 110 including a dielectric layer 111 and inner electrodes 121 and 122 alternately disposed with respect to the dielectric layer 111; outer electrodes 130 and 140 disposed on the body 110 and connected to the inner electrodes 121 and 122; and interface layers 151 and 152 disposed between the body 110 and the outer electrodes 130 and 140, wherein the interface layers 151 and 152 may include an oxide containing a conductive metal having a crystal structure.
[0032] Reference Figure 1 The multilayer electronic assembly 100 may include a main body 110 and external electrodes 130 and 140 disposed on the main body 110.
[0033] Reference Figure 2 The main body 110 may have a dielectric layer 111 and internal electrodes 121 and 122 alternately disposed. Specifically, the main body 110 may have a first internal electrode 121 and a second internal electrode 122 alternately disposed, with the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.
[0034] There are no particular restrictions on the specific shape of the main body 110, but as Figure 1As shown, the main body 110 may be formed in a hexahedral shape or a similar shape. Due to the shrinkage of the ceramic powder included in the main body 110 during the sintering process, the main body 110 may not have a perfect hexahedral shape, but may have a substantially hexahedral shape.
[0035] Referring Figure 1 , the main body 110 may have: a first surface 1 and a second surface 2, opposite to each other in a first direction; a third surface 3 and a fourth surface 4, connected to the first surface 1 and the second surface 2 and opposite to each other in a second direction; and a fifth surface 5 and a sixth surface 6, connected to the first surface 1 and the second surface 2 and connected to the third surface 3 and the fourth surface 4 and opposite to each other in a third direction. In this case, the first direction may be defined as the direction along which the dielectric layers 111 and the inner electrodes 121 and 122 are alternately arranged.
[0036] The plurality of dielectric layers 111 may be in a sintered state, and adjacent dielectric layers 111 may be integrated with each other such that it is difficult to identify the boundary between adjacent dielectric layers 111 without using a scanning electron microscope (SEM).
[0037] There is no particular limitation on the material included in the dielectric layer 111 as long as sufficient capacitance can be obtained. For example, a barium titanate-based material, a lead composite perovskite-based material, or a strontium titanate-based material may be used. The barium titanate-based material may include BaTiO3-based ceramic powder particles, and examples of the BaTiO3-based ceramic powder particles may include BaTiO3 and (Ba ,
[0039] Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca<00贯穿全文查看更多内容请点击:https: / / pan.baidu.com / s / 1234567890abcdefghijklmnopqrstuvwxyz000006>)(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1).
[0038] In addition, the material included in the dielectric layer 111 may be obtained by adding various ceramic additives such as organic solvents, binders, dispersants, etc. to particles such as barium titanate (BaTiO3) according to the purpose of the present disclosure.
[0039] There is no particular limitation on the average thickness td of the dielectric layer 111. In the case of miniaturization and high capacity of the multilayer electronic component 100, the average thickness td of the dielectric layer 111 can be 0.35 μm or less, and in order to improve the reliability of the multilayer electronic component 100 under high temperature and high voltage, the average thickness td of the dielectric layer 111 can be 5 μm or greater.
[0040] The average thickness td of dielectric layer 111 can refer to the average thickness of one or more dielectric layers among a plurality of dielectric layers.
[0041] For example, the average thickness td of dielectric layer 111 can be obtained by averaging the thicknesses measured at 1 / 4, 2 / 4, and 3 / 4 points in the longitudinal direction (e.g., the second direction) of a dielectric layer adjacent to the point where the longitudinal centerline and thickness direction centerline of the capacitor formation intersect, based on an image obtained by scanning a cross-section of the body 110 cut in the central portion in the third direction using a scanning electron microscope (SEM). This averaging of the thicknesses is performed on the dielectric layer adjacent to the point where the longitudinal centerline and thickness direction centerline of the capacitor formation intersect. The average thickness of the dielectric layer can be further generalized by extending the measurement to two upper and two lower dielectric layers with equal spacing, based on a dielectric layer adjacent to the point where the longitudinal centerline and thickness direction centerline of the capacitor formation intersect.
[0042] Reference Figure 2 and Figure 3 The main body 110 may include: a capacitor forming portion Ac, in which a first inner electrode 121 and a second inner electrode 122 are stacked on top of each other in a first direction; and covering portions 112 and 113, formed above and below the capacitor forming portion Ac in the first direction.
[0043] Cover portions 112 and 113 may include: an upper cover portion 112 disposed on one surface of the capacitor forming portion Ac in a first direction; and a lower cover portion 113 disposed on another surface of the capacitor forming portion Ac in a first direction.
[0044] Reference Figure 8 The covers 112 and 113 can be formed by stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitor forming portion Ac in the thickness direction, respectively, and can substantially prevent damage to the internal electrode due to physical stress and / or chemical stress.
[0045] Cover portions 112 and 113 do not include internal electrodes and may include the same material as the dielectric layer 111. That is, cover portions 112 and 113 may include ceramic materials (e.g., barium titanate (BaTiO3) based ceramic materials).
[0046] Furthermore, the average thickness of the covers 112 and 113 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacity of multilayer electronic components, the average thickness tc of the covers 112 and 113 can be 15 μm or less.
[0047] The average thickness of the covers 112 and 113 may refer to the first directional dimension, and may be the average of the first directional dimensions of the covers measured at five points spaced equally apart from each other above or below the capacitor forming portion Ac.
[0048] The main body 110 may also include edge portions 114 and 115 disposed on one surface and the other surface of the capacitor forming portion Ac in a third-direction orientation.
[0049] Edge portions 114 and 115 may include an edge portion 114 disposed on one surface of the capacitor forming portion Ac in a third direction and an edge portion 115 disposed on another surface of the capacitor forming portion Ac in a third direction. That is, edge portions 114 and 115 may be regions that contact the two side surfaces of the capacitor forming portion Ac in a third direction (e.g., the width direction).
[0050] like Figure 3 As shown, the edges 114 and 115 may refer to the region between the two ends of the first inner electrode 121 and the second inner electrode 122 in the third direction and the outer surface of the body 110 in the cross section obtained by cutting the body 110 along the first direction-third direction.
[0051] The edges 114 and 115 can essentially prevent damage to the internal electrode due to physical stress and / or chemical stress.
[0052] Edges 114 and 115 can be formed by applying conductive paste to the ceramic green sheet when forming the internal electrode by applying conductive paste to the ceramic green sheet, except for the area where the edge is to be formed.
[0053] In addition, in order to suppress the step difference caused by the inner electrodes 121 and 122, the edge portions 114 and 115 can be formed by stacking ceramic green sheets coated with conductive paste to form a stack body, cutting the stack body so that the inner electrodes are exposed on the two side surfaces of the capacitor forming portion Ac in the third direction (Z direction), and then stacking a single dielectric layer or two or more dielectric layers on the two side surfaces of the capacitor forming portion Ac in the third direction (Z direction).
[0054] Furthermore, the widths of the edges 114 and 115 do not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacity of multilayer electronic components, the average width of the edges 114 and 115 can be 15 μm or less.
[0055] The average width of the edges 114 and 115 can refer to the average size of the edges 114 and 115 in the third direction, and can be the average value of the third-direction size of the edges measured at five points that are equally spaced apart from each other on the side surface of the capacitor forming part Ac in the third direction.
[0056] The inner electrodes 121 and 122 may be alternately disposed with the dielectric layer 111 in the first direction.
[0057] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 may be alternately arranged opposite each other, with a dielectric layer 111 sandwiched between the first internal electrode 121 and the second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 may be connected to the third surface 3 and the fourth surface 4 of the body 110, respectively. Specifically, one end of the first internal electrode 121 may be connected to the third surface 3, and one end of the second internal electrode 122 may be connected to the fourth surface 4.
[0058] The first inner electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4. The first outer electrode 130 may be disposed on the third surface 3 of the body and connected to the first inner electrode 121, and the second outer electrode 140 may be disposed on the fourth surface 4 of the body and connected to the second inner electrode 122.
[0059] That is, the first inner electrode 121 is connected to the first outer electrode 130 instead of the second outer electrode 140, and the second inner electrode 122 is connected to the second outer electrode 140 instead of the first outer electrode 130. Therefore, the first inner electrode 121 can be formed to be spaced apart from the fourth surface 4 by a specific distance, and the second inner electrode 122 can be formed to be spaced apart from the third surface 3 by a specific distance. In this case, the first inner electrode 121 and the second inner electrode 122 can be electrically isolated from each other by a dielectric layer 111 disposed between them.
[0060] The main body 110 can be formed by alternately stacking ceramic green sheets with a first internal electrode pattern printed thereon and ceramic green sheets with a second internal electrode pattern printed thereon, and then sintering these ceramic green sheets.
[0061] There are no particular limitations on the materials included in the inner electrodes 121 and 122, and materials with excellent conductivity can be used. For example, the inner electrodes 121 and 122 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.
[0062] Furthermore, the internal electrodes 121 and 122 can be formed by printing a conductive paste for the internal electrodes onto a ceramic green sheet. The conductive paste for the internal electrodes includes one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The printing method for the conductive paste for the internal electrodes can be screen printing or gravure printing, and this disclosure is not limited thereto.
[0063] There is no particular limitation on the average thickness te of the internal electrode. In the case of miniaturization and high capacity of the multilayer electronic component 100, the average thickness te of the internal electrode can be 0.35 μm or less, and in order to improve the reliability of the multilayer electronic component 100 under high temperature and high voltage, the average thickness te of the internal electrode can be 1 μm or greater.
[0064] The average thickness te of the inner electrodes 121 and 122 may refer to the average thickness of one or more of the inner electrodes 121 and 122.
[0065] For example, the average thickness te of inner electrodes 121 and 122 can be obtained by averaging the thickness measured at points 1 / 4, 2 / 4, and 3 / 4 of the length of the inner electrode in the longitudinal direction (e.g., the second direction) based on an inner electrode adjacent to the point where the longitudinal centerline and thickness direction centerline of the capacitor forming portion intersect, extracted from an image obtained by scanning a cross-section of the body 110 cut in the central portion in the third direction using a scanning electron microscope (SEM). The average thickness of the inner electrodes can be further generalized by extending the measurement to two upper and two lower inner electrodes with equal spacing, adjacent to an inner electrode at the point where the longitudinal centerline and thickness direction centerline of the capacitor forming portion intersect.
[0066] External electrodes 130 and 140 may be disposed on the third surface 3 and the fourth surface 4 of the body 110. External electrodes 130 and 140 may include: a first external electrode 130 disposed on the third surface 3 of the body 110 and connected to the first internal electrode 121; and a second external electrode 140 disposed on the fourth surface 4 of the body 110 and connected to the second internal electrode 122.
[0067] In the example embodiment, a multilayer electronic component 100 is described having a structure with two external electrodes 130 and 140, but the number or shape of the external electrodes may be changed depending on the shape of the internal electrodes and / or other purposes.
[0068] In addition, the outer electrodes 130 and 140 can be formed using any conductive material (such as metal), and the specific material can be determined by taking into account electrical properties, structural stability, etc., and the outer electrodes 130 and 140 can also have a multilayer structure.
[0069] For example, the external electrodes 130 and 140 may include electrode layers 131 and 141 disposed on the body 110 and plating layers 132, 133, 142 and 143 disposed on the electrode layers 131 and 141.
[0070] For a more specific example of electrode layers 131 and 141, the electrode layers may be sintered electrodes comprising conductive metal and glass, or resin-based electrodes comprising conductive metal and resin.
[0071] Furthermore, electrode layers 131 and 141 may have the form of a sintered electrode and a resin-based electrode sequentially formed on the body. Alternatively, the electrode layers can be formed by transferring a sheet comprising a conductive metal onto the body, or by transferring a sheet comprising a conductive metal onto the sintered electrode.
[0072] As the conductive metal included in the electrode layer, materials with excellent conductivity can be used, and there are no particular limitations. For example, the conductive metal can be one or more of nickel (Ni), copper (Cu), and their alloys.
[0073] Platings 132, 133, 142, and 143 are used to improve mounting characteristics. There are no particular restrictions on the type of platings 132, 133, 142, and 143, and they can be one or more of Ni, Sn, Pd, and their alloys, and can be formed by multiple layers.
[0074] For more specific examples of plating layers 132, 133, 142, and 143, the plating layer may be a Ni plating layer or a Sn plating layer, or it may be in the form of a Ni plating layer and a Sn plating layer sequentially formed on the electrode layer, or it may be in the form of a Sn plating layer, a Ni plating layer, and a Sn plating layer formed sequentially. Furthermore, the plating layer may include multiple Ni plating layers and / or multiple Sn plating layers.
[0075] The internal electrodes 121 and 122, as well as the dielectric layer 111, can become heat sources during the operation of the multilayer electronic assembly. Specifically, the heat generation can be caused by the equivalent series resistance (ESR) loss of the multilayer electronic assembly and by the dielectric loss of the dielectric layer 111. Furthermore, the heat generation can be determined based on the ESR of the multilayer electronic assembly and the loss factor (tanδ) of the dielectric layer 111.
[0076] When the heat generated inside the multilayer electronic component 100 is not effectively released to the outside, not only may the multilayer electronic component itself be damaged (e.g., reduced reliability, reduced capacity per unit volume, and shortened lifespan due to the degradation of the dielectric layer 111), but the performance of other components adjacent to the multilayer electronic component may also be reduced.
[0077] Typically, during the sintering process, due to differences in sintering shrinkage and material properties, pores or glass may form at the interface between the body and the external electrode of a multilayer electronic component. When pores or glass with low thermal conductivity are formed at the interface between the body and the external electrode, the heat generated inside the body may not be effectively transferred and released to the external electrode, which may lead to a decrease in the heat dissipation performance of the multilayer electronic component.
[0078] A multilayer electronic component 100 according to an example embodiment of the present disclosure may include interface layers 151 and 152 disposed between a body 110 and external electrodes 130 and 140, such that heat generated inside the body 110 can be effectively released along the interface layers 151 and 152 to the external electrodes 130 and 140, thereby improving the heat dissipation performance of the multilayer electronic component 100.
[0079] Interface layers 151 and 152 according to exemplary embodiments of the present disclosure may include oxides containing conductive metals, and the oxides containing conductive metals included in interface layers 151 and 152 may have a crystalline structure.
[0080] Conventionally, during the sintering process of multilayer electronic components, pores or amorphous glass may be formed at the interface between the body and the external electrode, and the heat dissipation performance of the multilayer electronic component may be reduced due to the low thermal conductivity of the pores or glass. According to an example embodiment of this disclosure, since the interface layers 151 and 152 comprise an oxide containing a conductive metal with a crystalline structure, superior thermal conductivity can be ensured compared to the case where amorphous glass is formed at the interface between the body and the external electrode, thereby improving the heat dissipation characteristics of the multilayer electronic component 100.
[0081] Whether the oxide containing conductive metal in the interface layers 151 and 152 has a crystal structure can be confirmed by whether obvious peaks or diffraction patterns are obtained via X-ray diffraction analysis (XRD), electron diffraction pattern analysis (SAED, selected area electron diffraction), etc., and various analytical techniques can be used.
[0082] Reference Figure 5In an example embodiment, the interface layer 151 may be a composite layer comprising a first region R1 and a second region R2. The first region R1 is formed using an oxide comprising a conductive metal, and the second region R2 is formed using a conductive metal. The first region R1, formed using an oxide comprising a conductive metal, can be used to improve the bonding strength between the body 110 and the external electrodes 130 and 140, and the second region R2, formed using a conductive metal, can be used to improve heat dissipation efficiency. Therefore, when the interface layer 151 simultaneously comprises a first region R1 formed using an oxide comprising a conductive metal and a second region R2 formed using a conductive metal, as in the example embodiment, the bonding strength between the body 110 and the external electrodes 130 and 140 can be improved, while simultaneously improving heat dissipation efficiency.
[0083] Additionally, the oxide containing a conductive metal included in the first region R1 may be an oxide containing a conductive metal included in the second region R2.
[0084] Interface layers 151 and 152 may include oxides containing conductive metals. However, when the oxygen content in interface layers 151 and 152 is excessive compared to the conductive metal content, the heat dissipation effect may be reduced, and when the oxygen content is insufficient compared to the conductive metal content, the bonding strength between the body 110 and the external electrodes 130 and 140 may be reduced. Therefore, in the example embodiment, the ratio of oxygen content to conductive metal content in interface layers 151 and 152 may be adjusted to be greater than or equal to 0.5 at% and less than or equal to 10 at%, thereby simultaneously improving the heat dissipation effect and the bonding strength between the body 110 and the external electrodes 130 and 140.
[0085] The oxide containing a conductive metal included in interface layers 151 and 152 may be an oxide containing a conductive metal with excellent thermal conductivity, and examples of conductive metals with excellent thermal conductivity may include silver (Ag), aluminum (Al), and copper (Cu). That is, in the example embodiment, the conductive metal may include one or more of silver (Ag), aluminum (Al), and copper (Cu), and the oxide containing a conductive metal included in interface layers 151 and 152 may be one or more of gold (Au) oxide, silver (Ag) oxide, and copper (Cu) oxide.
[0086] There are no particular limitations on the method for confirming the composition of interface layers 151 and 152. For example, in a first and second direction cross-section of the multilayer electronic assembly 100 polished to the center of the multilayer electronic assembly 100 in a third direction, the presence and concentration (at%) of conductive metal elements and oxygen elements can be confirmed by analyzing specific regions of the interface between the body 110 and the external electrodes 130 and 140 using scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDX). Thus, M1 and M2 (described below) can be determined. Other methods and / or other tools that are understood by those skilled in the art may be used even if not described in this disclosure.
[0087] Furthermore, the interface layers 151 and 152 analyzed by SEM-EDX can be divided into regions with oxygen concentration less than 0.5 at% and regions with oxygen concentration greater than or equal to 0.5 at%. The regions with oxygen concentration less than 0.5 at% can be defined as regions generally formed using conductive metals, and the regions with oxygen concentration greater than or equal to 0.5 at% can be defined as regions generally formed using oxides including conductive metals.
[0088] Interface layers 151 and 152 may contact the third surface 3 and / or the fourth surface 4 of the body 110. Specifically, the first interface layer 151 may contact the third surface 3 of the body 110, and the second interface layer 152 may contact the fourth surface 4 of the body 110. Since the third surface 3 of the body 110 is the surface that contacts the first internal electrode 121 (i.e., the surface to which the first internal electrode 121 is connected), and the fourth surface 4 of the body 110 is the surface that contacts the second internal electrode 122 (i.e., the surface to which the second internal electrode 122 is connected), the third surface 3 and the fourth surface 4 of the body 110 may be the main heat dissipation paths generated inside the body 110. According to the example embodiment, since the interface layers 151 and 152 are configured to contact the third surface 3 and / or the fourth surface 4 of the body 110 (the main heat dissipation paths generated inside the body 110), the heat dissipation characteristics of the multilayer electronic assembly 100 may be further improved.
[0089] Because interface layers 151 and 152 comprise oxides containing conductive metals, the electrical connectivity between the inner electrodes 121 and 122 and the outer electrodes 130 and 140 may be reduced when interface layers 151 and 152 come into contact with the inner electrodes 121 and 122. Therefore, in the example embodiment, interface layers 151 and 152 may be spaced apart from the inner electrodes 121 and 122 to prevent degradation of the electrical connectivity between the inner electrodes 121 and 122 and the outer electrodes 130 and 140.
[0090] Conventionally, in the process of bonding the substrate to the external electrode by sintering, pores or amorphous glass may be formed at the interface between the dielectric layer of the substrate and the external electrode. In this case, heat dissipated from the dielectric layer to the external electrode may be absorbed by the pores or amorphous glass at the interface between the dielectric layer and the external electrode, thus potentially reducing the heat dissipation efficiency of the multilayer electronic component. In the example embodiment, since interface layers 151 and 152 are configured to contact the dielectric layer 111, the formation of pores or amorphous glass at the interface between the dielectric layer 111 and the external electrodes 130 and 140 is prevented, thereby further improving the heat dissipation characteristics of the multilayer electronic component 100.
[0091] In an example embodiment, multiple interface layers 151 and 152 may be provided on the third surface 3 and / or the fourth surface 4.
[0092] Specifically, refer to Figure 2 Multiple first interface layers 151 can be formed on the third surface 3, and multiple second interface layers 152 can be formed on the fourth surface 4. In this case, the multiple first interface layers 151 can be spaced apart from each other in a first direction (the direction along which the dielectric layer 111 and the inner electrodes 121 and 122 are alternately disposed), and the multiple second interface layers 152 can also be spaced apart from each other in the first direction. Therefore, unevenness can be formed at the interface between the body 110 and the outer electrodes 130 and 140, thereby improving the mechanical strength of the bond between the body 110 and the outer electrodes 130 and 140.
[0093] Reference Figure 4 To further improve the mechanical strength of the bond between the main body 110 and the external electrodes 130 and 140, the electrode layers 131 and 141, which are components of the external electrodes 130 and 140, are preferably disposed in a space S in which the plurality of interface layers 151 and 152 are spaced apart from each other. That is, in the example embodiment, a portion of the external electrode may be disposed in a space S in which the plurality of interface layers 151 and 152 are spaced apart from each other in a first direction.
[0094] The formation length (i.e., the dimension in the second direction) of the interface layers 151 and 152 can be adjusted by taking into account the heat dissipation effect and the formation thickness of the external electrodes 130 and 140. Specifically, the maximum length of the interface layers 151 and 152 can be greater than or equal to 0.10 μm and less than or equal to 7.00 μm.
[0095] Reference Figure 4The maximum length of interface layer 151 can be represented as L1, and can also represent the maximum length of any interface layer in the second direction measured in a first and second direction section from the polishing of the multilayer electronic assembly 100 to the center of the multilayer electronic assembly 100 in a third direction. The maximum length can be measured using a scanning electron microscope. Other methods and / or other tools understood by those skilled in the art may be used, even if not described in this disclosure.
[0096] When the maximum length L1 of interface layers 151 and 152 is less than 0.10 μm, the heat dissipation effect may be insufficient, and it may not be able to prevent the formation of pores or glass at the interface between the body 110 and the external electrodes 130 and 140. When the maximum length L1 of interface layers 151 and 152 exceeds 7.00 μm, the bonding strength between the body and the external electrodes may be reduced due to insufficient space for forming the external electrodes, which include conductive metal.
[0097] Reference Figure 6 According to another example embodiment, interface layers 151' and 152' may have different ratios of copper (Cu) content to oxygen (O) content depending on their location.
[0098] Reference Figure 7 When the body 110 according to another example embodiment is divided into three parts in the X direction (the direction along which the dielectric layer and the inner electrode are alternately disposed), the body 110 can be divided into a central portion CP disposed in the center and outer portions OP disposed above and below the central portion. That is, in the direction along which the dielectric layer and the inner electrode are alternately disposed, the body 110 can be divided into a central portion CP disposed in the center and outer portions OP disposed on opposite surfaces of the central portion CP in that direction. In this case, the interface layer 151' may include a central interface layer 151a in contact with the central portion CP and an outer interface layer 151b in contact with the outer portion OP.
[0099] In addition, since the heat generated inside the main body 110 can reach its maximum in the central portion CP with a high current density, it is necessary to effectively release the heat generated in the central portion CP in order to significantly improve the heat dissipation characteristics of the multilayer electronic component 100.
[0100] Therefore, in the example embodiment, when the ratio of the content (at%) of conductive metal elements to the content (at%) of oxygen (O) elements included in the central interface layer 151a is defined as M1, and the ratio of the content (at%) of conductive metal elements to the content (at%) of oxygen (O) elements included in the outer interface layer 151b is defined as M2, M1>M2 can be satisfied. Here, "content of a specific element" can represent the atomic percentage of a specific element, that is, the atomic percentage of a specific element relative to all elements in the corresponding interface layer. Therefore, the heat concentrated in the central portion CP can be effectively dissipated along the central interface layer 151a, where the ratio of the content of conductive metal elements to the content of oxygen (O) elements is relatively high, and since the outer interface layer 151b, where the ratio of the content of conductive metal elements to the content of oxygen (O) elements is relatively low, is provided in the outer portion OP, the bonding strength between the body 110 and the outer electrodes 130 and 140 can be improved.
[0101] In the example embodiment, the ratio of M1 to M2 (M1 / M2) may exceed 1, but more preferably, the ratio of M1 to M2 (M1 / M2) may be greater than or equal to 2. Therefore, the heat dissipation effect of this disclosure and the enhanced bonding strength between the body 110 and the external electrodes 130 and 140 can be further improved.
[0102] Furthermore, there is no particular upper limit to the ratio of M1 to M2 (M1 / M2), and it can be varied depending on the type of conductive metal and the oxide that includes the conductive metal. For example, M1 / M2 can be less than or equal to 4.
[0103] There are no particular limitations on the methods for forming interface layers 151 and 152 according to this disclosure. (See also...) Figure 9A Patterned sheets 211 and 212 can be provided on the third surface 3 and the fourth surface 4 of the main body 110. Patterned sheets 211 and 212 may include interface layers 151 and 152 and side dielectric layers 161 and 162, and the interface layers 151 and 152 and the side dielectric layers 161 and 162 may be in the state of conductive paste and ceramic sheet before sintering.
[0104] Reference Figure 9BThe side dielectric layers 161 and 162 of the patterned sheets 211 and 212 can be removed by separate processes, so only the interface layers 151 and 152 may exist on the third surface 3 and the fourth surface 4 of the body 110. In this case, there are no particular limitations on the method for removing the side dielectric layers 161 and 162. For example, the side dielectric layers 161 and 162 can be removed by chemical etching using acidic solutions or the like, or by physical etching using high-energy plasma or lasers. In addition, the etched area can be controlled by mask patterning to remove the side dielectric layers 161 and 162 more effectively, and etching can be applied similarly even when the patterned sheets are formed using conductive metal and no separate dielectric layers are formed.
[0105] Although not shown in the accompanying drawings, the processes of forming the outer electrodes 130 and 140 and sintering the body 110 and the outer electrodes 130 and 140 may subsequently be performed on the third surface 3 and the fourth surface 4 of the body 110.
[0106] The composition of interface layers 151 and 152 according to exemplary embodiments of the present disclosure and various exemplary embodiments thereof can be controlled by controlling the composition of the conductive paste included in the patterned sheets 211 and 212, or by controlling the sintering atmosphere of the body 110 and the external electrodes 130 and 140. Furthermore, the structure or pattern of interface layers 151 and 152 can be formed by controlling the position or arrangement of the conductive paste disposed in the patterned sheets 211 and 212.
[0107] Although exemplary embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments and drawings, but is defined by the appended claims. Therefore, various substitutions, modifications or variations can be made by those skilled in the art without departing from the technical concept of the present disclosure as defined by the appended claims, and such substitutions, modifications or variations should be construed as being included in the technical concept of the present disclosure.
[0108] Furthermore, the expression "example embodiment" as used in this disclosure does not represent the same embodiment and is provided to emphasize and explain different features. The example embodiments presented above do not preclude implementation in combination with features of another embodiment. For example, unless there is a description in another example embodiment that is contrary to or contradictory to an item described in a particular example embodiment, such items may be understood as descriptions related to another example embodiment even if they are not described in another example embodiment.
[0109] In this disclosure, terminology is used only to describe particular example embodiments and is not intended to limit the scope of this disclosure. Unless the context clearly indicates otherwise, the singular form may also include the plural form.
Claims
1. A multilayer electronic component comprising: a main body including dielectric layers and internal electrodes disposed alternately with the dielectric layers; external electrodes disposed on the main body and connected to the internal electrodes; and an interface layer disposed between the main body and the external electrodes, wherein the interface layer includes an oxide containing a conductive metal having a crystal structure. the interface layer includes:
2. The multilayer electronic assembly of claim 1, wherein, a first region including the oxide; and a second region including the conductive metal. A ratio of a content of oxygen elements to a content of conductive metal elements included in the interface layer is greater than or equal to 0.5 at% and less than or equal to 10 at%.
3. The multilayer electronic assembly of claim 1, wherein, The conductive metal includes at least one of silver, aluminum, and copper.
4. The multilayer electronic assembly of claim 1, wherein, the internal electrodes include a first internal electrode and a second internal electrode, 5. The multilayer electronic assembly of claim 1, wherein, the external electrodes include a first external electrode connected to the first internal electrode and a second external electrode spaced apart from the first external electrode and connected to the second internal electrode, the main body includes a first surface and a second surface facing each other in a first direction along which the dielectric layers and the internal electrodes are disposed alternately, a third surface and a fourth surface facing each other in a second direction along which the first external electrode and the second external electrode are spaced apart from each other, and a fifth surface and a sixth surface facing each other in a third direction perpendicular to the first direction and the second direction, and the interface layer is in contact with the third surface and / or the fourth surface. The interface layer is spaced apart from the internal electrode.
6. The multilayer electronic assembly of claim 1, wherein, The interface layer is in contact with the dielectric layer.
7. The multilayer electronic assembly of claim 1, wherein, The interface layer includes a plurality of interface layers, and 8. The multilayer electronic assembly of claim 1, wherein, the plurality of interface layers are spaced apart from each other in a direction along which the dielectric layers and the internal electrodes are disposed alternately. A portion of the external electrodes is disposed in a space in which adjacent interface layers among the plurality of interface layers are spaced apart from each other.
9. The multilayer electronic assembly of claim 8, wherein, The external electrodes include a first external electrode and a second external electrode, a maximum length of the interface layer in a direction along which the first external electrode and the second external electrode are spaced apart from each other is greater than or equal to 0.10 pm and less than or equal to 7.00 pm.
10. The multilayer electronic assembly of claim 1, wherein, In the direction along which the dielectric layers and the internal electrodes are disposed alternately, the main body includes a central portion disposed at a center of the main body and an outer portion disposed on opposite surfaces of the central portion in the direction, 11. The multilayer electronic assembly of claim 1, wherein, when a ratio of an atomic content percentage of the conductive metal elements to an atomic content percentage of the oxygen elements included in a portion of the interface layer in contact with the central portion is defined as M1 and a ratio of an atomic content percentage of the conductive metal elements to an atomic content percentage of the oxygen elements included in a portion of the interface layer in contact with the outer portion is defined as M2, M1 / M2 satisfies greater than 1. M1 / M2 satisfies greater than or equal to 2 and less than or equal to 4.
12. The multilayer electronic assembly of claim 11, wherein,