Wafer protection film and method of manufacturing the same

Abstract

This invention discloses a wafer protective film and its manufacturing method. The wafer protective film includes: a bottom layer film formed on the surface of the wafer; an intermediate layer film formed on the surface of the bottom layer film; and a surface layer film formed on the surface of the intermediate layer film. By forming a protective film on the wafer surface using the technical solution of this invention, vibration and collisions during wafer transportation and processing can be effectively mitigated, reducing the risk of wafer breakage and damage, thereby improving wafer manufacturing efficiency and quality.

Description

Technical Field

[0001] This invention relates to the field of protective film technology, and in particular to a wafer protective film and its manufacturing method. Background Technology

[0002] The main component of a wafer is silicon dioxide, which is hard but brittle. Therefore, vibrations and collisions during transportation and processing can cause it to break and be damaged, thus affecting the manufacturing efficiency and quality of the wafer. Summary of the Invention

[0003] The purpose of this invention is to provide a wafer protective film and its manufacturing method. By forming a protective film on the wafer surface, the vibration and collision of the wafer during transportation and processing can be effectively mitigated, reducing the risk of wafer breakage and damage, thereby improving the wafer manufacturing efficiency and quality.

[0004] To achieve the above objectives, a first aspect of the present invention provides a wafer protective film, comprising:

[0005] A bottom layer film formed on the surface of a wafer;

[0006] An intermediate layer film is formed on the surface of the underlying film;

[0007] A surface layer film formed on the surface of the intermediate layer film.

[0008] Furthermore, the material of the underlying membrane includes polyurethane.

[0009] Furthermore, the thickness of the bottom layer film is 50–60 μm.

[0010] Furthermore, the material of the intermediate layer membrane includes polystyrene microspheres.

[0011] Furthermore, the thickness of the intermediate layer film is 1.5–3.0 μm.

[0012] Furthermore, the material of the surface film includes nano-alumina.

[0013] Furthermore, the thickness of the surface film is 15–20 μm.

[0014] To achieve the above objectives, a second aspect of the present invention provides a method for manufacturing a wafer protective film, comprising:

[0015] A first mixture is coated on the surface of the wafer to form a bottom layer film;

[0016] A second mixture is coated on the surface of the bottom layer film to form an intermediate layer film;

[0017] A third mixture is coated on the surface of the intermediate layer film to form a surface film;

[0018] The first mixture comprises polyurethane and a first solvent, the second mixture comprises polystyrene microspheres and a second solvent, and the third mixture comprises nano-alumina and a third solvent.

[0019] Furthermore, the polyurethane content in the first mixture is 50%, the ratio of polystyrene microspheres to the second solvent in the second mixture is 2:1 or 5:3, and the nano-alumina content in the third mixture is 50-70%.

[0020] Further, the first solvent is at least one of toluene, butyl acetate, and methyl ethyl ketone; the second solvent is at least one of benzene and xylene; the third solvent is at least one or more of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate; and the third mixture further includes a dispersant and an anti-settling agent.

[0021] Compared with existing technologies, embodiments of the present invention provide a wafer protective film and its manufacturing method. First, a first mixture is coated on the surface of the wafer to form a bottom layer film. Then, a second mixture is coated on the surface of the bottom layer film to form an intermediate layer film. Finally, a third mixture is coated on the surface of the intermediate layer film to form a top layer film. The first mixture comprises polyurethane and a first solvent, the second mixture comprises polystyrene microspheres and a second solvent, and the third mixture comprises nano-alumina and a third solvent. By forming a protective film on the wafer surface, embodiments of the present invention can effectively mitigate vibration and collisions during wafer transportation and processing, reducing the risk of wafer breakage and damage, thereby improving wafer manufacturing efficiency and quality. Attached Figure Description

[0022] Figure 1 This is a cross-sectional structural schematic diagram of a preferred embodiment of a wafer protective film provided by the present invention;

[0023] Figure 2 This is a flowchart of a preferred embodiment of a method for manufacturing a wafer protective film provided by the present invention. Detailed Implementation

[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] A first aspect of the present invention provides a wafer protective film, see [link to relevant documentation]. Figure 1The diagram shown is a cross-sectional view of a preferred embodiment of a wafer protective film provided by the present invention. The wafer protective film 110 includes:

[0026] A bottom film 111 is formed on the surface of wafer 100;

[0027] An intermediate layer film 112 is formed on the surface of the bottom layer film 111;

[0028] A surface layer 113 is formed on the surface of the intermediate layer 112.

[0029] Specifically, such as Figure 1 As shown, in this embodiment of the invention, the wafer protective film 110 is disposed on the surface of the wafer 100, and is mainly composed of a bottom layer film 111, an intermediate layer film 112 and a surface layer film 113. The bottom layer film 111, the intermediate layer film 112 and the surface layer film 113 are stacked sequentially, that is, the bottom layer film 111 is formed on the surface of the wafer 100, the intermediate layer film 112 is formed on the surface of the bottom layer film 111, and the surface layer film 113 is formed on the surface of the intermediate layer film 112.

[0030] It should be noted that the wafer protective film 110 is applied to the surface of the wafer 100 and has the function of shock absorption and anti-collision. It can protect the wafer 100, effectively alleviate the vibration and collision of the wafer during transportation and processing, reduce the risk of wafer breakage and damage, and reduce the occurrence of defective products, thereby improving the wafer manufacturing efficiency and quality.

[0031] In one alternative embodiment, the material of the underlying membrane includes polyurethane.

[0032] Specifically, in conjunction with the above embodiments, the bottom layer of the wafer protective film in the embodiments of the present invention can be made of polyurethane material, which gives it good flexibility and toughness.

[0033] In one alternative embodiment, the thickness of the bottom film is 50–60 μm.

[0034] Specifically, in conjunction with the above embodiments, the thickness of the bottom layer film of the wafer protective film in the embodiments of the present invention can be selected within the range of 50μm to 60μm.

[0035] For example, the thickness of the bottom film can be 50μm, 51μm, 52μm, 53μm, 54μm, 55μm, 56μm, 57μm, 58μm, 59μm or 60μm, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0036] In one alternative embodiment, the material of the intermediate layer membrane comprises polystyrene microspheres.

[0037] Specifically, in conjunction with the above embodiments, the intermediate layer film of the wafer protective film in the embodiments of the present invention can be made of polystyrene microspheres (polystyrene microbeads) to give it a certain shock absorption effect.

[0038] In one alternative embodiment, the thickness of the intermediate layer film is 1.5 to 3.0 μm.

[0039] Specifically, in conjunction with the above embodiments, the thickness of the intermediate layer film of the wafer protective film in the embodiments of the present invention can be selected in the range of 1.5μm to 3.0μm.

[0040] For example, the thickness of the intermediate layer film can be 1.5μm, 1.6μm, 1.7μm, 1.8μm, 1.9μm, 2.0μm, 2.1μm, 2.2μm, 2.3μm, 2.4μm, 2.5μm, 2.6μm, 2.7μm, 2.8μm, 2.9μm or 3.0μm, and can also be set according to actual needs. This embodiment of the invention does not impose specific limitations.

[0041] In one alternative embodiment, the material of the surface film includes nano-alumina.

[0042] Specifically, in conjunction with the above embodiments, the surface film of the wafer protective film in the embodiments of the present invention can be made of nano-alumina material, which gives it excellent corrosion resistance and wear resistance.

[0043] In one alternative embodiment, the thickness of the surface film is 15–20 μm.

[0044] Specifically, in conjunction with the above embodiments, the thickness of the surface layer of the wafer protective film in the embodiments of the present invention can be selected within the range of 15μm to 20μm.

[0045] For example, the thickness of the surface film can be 15μm, 16μm, 17μm, 18μm, 19μm or 20μm, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0046] A second aspect of the present invention provides a wafer protective film, see [link to relevant documentation]. Figure 2 The diagram shown is a flowchart of a preferred embodiment of a method for manufacturing a wafer protective film provided by the present invention, the method comprising steps S11 to S13:

[0047] Step S11: Coat the first mixture on the surface of the wafer to form a bottom layer film;

[0048] Step S12: Coat the surface of the bottom layer film with the second mixture to form the intermediate layer film;

[0049] Step S13: Coat the surface of the intermediate layer film with the third mixture to form a surface film;

[0050] The first mixture comprises polyurethane and a first solvent, the second mixture comprises polystyrene microspheres and a second solvent, and the third mixture comprises nano-alumina and a third solvent.

[0051] In practice, firstly, a pre-prepared first mixture can be coated on the surface of the wafer using a coating method (e.g., spraying) and cured using a UV device to make it tough, thereby forming a base layer film on the surface of the wafer; then, a pre-prepared second mixture can be coated on the surface of the base layer film using a coating method (e.g., spraying) and dried to form an intermediate layer film on the surface of the base layer film; finally, a pre-prepared third mixture can be coated on the surface of the intermediate layer film using a coating method (e.g., spraying) and dried to form a surface layer film on the surface of the intermediate layer film.

[0052] It should be noted that the first mixture includes polyurethane and a first solvent. That is, the polyurethane material can be dispersed in the first solvent before mixing to obtain the first mixture.

[0053] It should be noted that the second mixture includes polystyrene microspheres and a second solvent. That is, the polystyrene microspheres (polystyrene microbeads) can be pre-dispersed in the second solvent and mixed to obtain the second mixture.

[0054] It should be noted that the third mixture includes nano-alumina and a third solvent. That is, the nano-alumina material (usually with a diameter in the range of 0.5μm to 5.0μm) can be dispersed in the third solvent before mixing to obtain the third mixture.

[0055] In one optional embodiment, the polyurethane content in the first mixture is 50%, the ratio of polystyrene microspheres to the second solvent in the second mixture is 2:1 or 5:3, and the nano-alumina content in the third mixture is 50-70%.

[0056] Specifically, in conjunction with the above embodiments, the polyurethane content in the first mixture is 50%, that is, 50% of the polyurethane material can be dispersed in the first solvent and mixed in advance to obtain the first mixture.

[0057] Specifically, in conjunction with the above embodiments, the ratio of polystyrene microspheres to the second solvent in the second mixture is 2:1 or 5:3. That is, the polystyrene microspheres (polystyrene microbeads) material and the second solvent can be mixed in advance at a ratio of 2:1 or 5:3 to obtain the second mixture.

[0058] Specifically, in conjunction with the above embodiments, the content of nano-alumina in the third mixture is 50% to 70%, that is, 50% to 70% of nano-alumina material (usually with a diameter in the range of 0.5 μm to 5.0 μm) can be dispersed in the third solvent in advance for mixing to obtain the third mixture.

[0059] For example, the content of nano-alumina in the third mixture can be 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68%, 69%, or 70%, and can also be set according to actual needs. This embodiment of the invention does not impose specific limitations.

[0060] In one optional embodiment, the first solvent is at least one of toluene, butyl acetate, and methyl ethyl ketone; the second solvent is at least one of benzene and xylene; the third solvent is at least one or more of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate; and the third mixture further includes a dispersant and an anti-settling agent.

[0061] Specifically, in conjunction with the above embodiments, the first solvent in the first mixture can be any one of toluene, butyl acetate, and butanone, or other suitable solvents. The embodiments of the present invention do not impose specific limitations.

[0062] Specifically, in conjunction with the above embodiments, the second solvent in the second mixture can be any one of benzene and xylene, or other suitable solvents. The embodiments of the present invention do not impose specific limitations.

[0063] Specifically, in conjunction with the above embodiments, the third solvent in the third mixture can be any one or more of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate, or other suitable solvents. The embodiments of the present invention do not impose specific limitations.

[0064] It should be noted that the third mixture includes not only nano-alumina and the third solvent, but also dispersants and anti-settling agents.

[0065] Based on all the above embodiments, the following describes the implementation process of the wafer protective film manufacturing method through the first specific embodiment, including: (1) dispersing 50% of polyurethane material in a first solvent and mixing it to obtain a first mixture; wherein, the first solvent can be at least one of toluene, butyl acetate, and methyl ethyl ketone; (2) coating the first mixture on the surface of the wafer by a coating method (e.g., spraying) and curing it using a UV device to make it strong and tough, so as to form a bottom film with a thickness of 50 μm on the surface of the wafer, the bottom film having good softness and toughness; (3) mixing polystyrene microspheres (polystyrene microbeads) material and a second solvent in a ratio of 2:1 or 5:3 to obtain a second mixture; wherein, the second solvent can be at least one of benzene and xylene; (4 ... and mixing it with a second solvent to obtain a second mixture; wherein, the second solvent can be at least one of benzene and xylene; The method (e.g., spraying) coats the second mixture on the surface of the base film and dries it to form an intermediate layer film with a thickness of 1.5 μm on the surface of the base film. The intermediate layer film has a certain shock absorption effect; (5) 70% of nano alumina material (usually in the range of 0.5 μm to 5.0 μm in diameter) is dispersed in a third solvent and mixed with a dispersant and an anti-settling agent to obtain the third mixture accordingly; wherein, the third solvent can be at least one or more of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate; (6) the third mixture is coated on the surface of the intermediate layer film by a coating method (e.g., spraying) and dried to form a surface layer film with a thickness of 15 μm on the surface of the intermediate layer film. The surface layer film has excellent corrosion resistance and wear resistance.

[0066] Based on all the above embodiments, the implementation process of the wafer protective film manufacturing method is described below through a second specific embodiment, including: (1) dispersing 50% of polyurethane material in a first solvent and mixing it to obtain a first mixture; wherein, the first solvent can be at least one of toluene, butyl acetate, and methyl ethyl ketone; (2) coating the first mixture on the surface of the wafer by a coating method (e.g., spraying) and curing it using a UV device to make it strong and tough, so as to form a bottom layer film with a thickness of 55 μm on the surface of the wafer, the bottom layer film having good softness and toughness; (3) mixing polystyrene microspheres (polystyrene microbeads) material and a second solvent in a ratio of 2:1 or 5:3 to obtain a second mixture; wherein, the second solvent can be at least one of benzene and xylene; (4 ... and mixing it with a second solvent to obtain a second mixture. The method (e.g., spraying) coats the second mixture on the surface of the base film and dries it to form an intermediate layer film with a thickness of 2.2 μm on the surface of the base film. The intermediate layer film has a certain shock absorption effect; (5) 60% of nano alumina material (usually in the range of 0.5 μm to 5.0 μm in diameter) is dispersed in a third solvent and mixed with a dispersant and an anti-settling agent to obtain the third mixture accordingly; wherein, the third solvent can be at least one or more of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate; (6) the third mixture is coated on the surface of the intermediate layer film by a coating method (e.g., spraying) and dried to form a surface layer film with a thickness of 18 μm on the surface of the intermediate layer film. The surface layer film has excellent corrosion resistance and wear resistance.

[0067] Based on all the above embodiments, the implementation process of the wafer protective film manufacturing method is described below through a third specific embodiment, including: (1) dispersing 50% of polyurethane material in a first solvent and mixing it to obtain a first mixture; wherein, the first solvent can be at least one of toluene, butyl acetate, and methyl ethyl ketone; (2) coating the first mixture on the surface of the wafer by a coating method (e.g., spraying) and curing it using a UV device to make it strong and tough, so as to form a bottom film with a thickness of 60 μm on the surface of the wafer, the bottom film having good softness and toughness; (3) mixing polystyrene microspheres (polystyrene microbeads) material and a second solvent in a ratio of 2:1 or 5:3 to obtain a second mixture; wherein, the second solvent can be at least one of benzene and xylene; (4 ... and mixing it with a second solvent to obtain a second mixture. The method (e.g., spraying) coats the second mixture on the surface of the bottom layer film and dries it to form an intermediate layer film with a thickness of 3.0 μm on the surface of the bottom layer film. The intermediate layer film has a certain shock absorption effect; (5) 50% of nano alumina material (usually in the range of 0.5 μm to 5.0 μm in diameter) is dispersed in a third solvent and mixed with a dispersant and an anti-settling agent to obtain the third mixture accordingly; wherein, the third solvent can be at least one or more of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate; (6) the third mixture is coated on the surface of the intermediate layer film by a coating method (e.g., spraying) and dried to form a surface layer film with a thickness of 20 μm on the surface of the intermediate layer film. The surface layer film has excellent corrosion resistance and wear resistance.

[0068] In summary, the wafer protective film and its manufacturing method provided by the embodiments of the present invention firstly coat a first mixture on the surface of the wafer to form a bottom layer film; then, a second mixture is coated on the surface of the bottom layer film to form an intermediate layer film; finally, a third mixture is coated on the surface of the intermediate layer film to form a top layer film. The first mixture comprises polyurethane and a first solvent, the second mixture comprises polystyrene microspheres and a second solvent, and the third mixture comprises nano-alumina and a third solvent. By forming a protective film on the wafer surface, the embodiments of the present invention can effectively mitigate vibration and collisions during wafer transportation and processing, reduce the risk of wafer breakage and damage, and reduce the occurrence of defective products, thereby improving wafer manufacturing efficiency and quality. Furthermore, the embodiments of the present invention are simple to implement, low in cost, and suitable for large-scale production applications.

[0069] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A wafer protective film, characterized in that, include: A bottom layer film formed on the surface of a wafer; An intermediate layer film is formed on the surface of the underlying film; A surface layer film formed on the surface of the intermediate layer film.

2. The wafer protective film as described in claim 1, characterized in that, The material of the bottom membrane includes polyurethane.

3. The wafer protective film as described in claim 1, characterized in that, The thickness of the bottom layer film is 50–60 μm.

4. The wafer protective film as described in claim 1, characterized in that, The material of the intermediate layer membrane includes polystyrene microspheres.

5. The wafer protective film as described in claim 1, characterized in that, The thickness of the intermediate layer film is 1.5 to 3.0 μm.

6. The wafer protective film as described in claim 1, characterized in that, The material of the surface film includes nano-alumina.

7. The wafer protective film as described in claim 1, characterized in that, The thickness of the surface film is 15–20 μm.

8. A method for manufacturing a wafer protective film, characterized in that, include: A first mixture is coated on the surface of the wafer to form a bottom layer film; A second mixture is coated on the surface of the bottom layer film to form an intermediate layer film; A third mixture is coated on the surface of the intermediate layer film to form a surface film; The first mixture comprises polyurethane and a first solvent, the second mixture comprises polystyrene microspheres and a second solvent, and the third mixture comprises nano-alumina and a third solvent.

9. The method for manufacturing the wafer protective film as described in claim 8, characterized in that, The first mixture contains 50% polyurethane, the second mixture contains polystyrene microspheres in a ratio of 2:1 or 5:3 to the second solvent, and the third mixture contains 50-70% nano-alumina.

10. The method for manufacturing the wafer protective film as described in claim 8, characterized in that, The first solvent is at least one of toluene, butyl acetate, and methyl ethyl ketone; the second solvent is at least one of benzene and xylene; the third solvent is at least one or more of dibutyl ether, methyl isobutyl ketone, propylene glycol methyl ether acetate, and propylene glycol ethyl ether acetate; and the third mixture further includes a dispersant and an anti-settling agent.

Images