A bonding apparatus, a bonding method, a computer apparatus, and a medium

Abstract

This invention discloses a bonding apparatus, a bonding method, a computer device, and a medium, relating to the field of semiconductor manufacturing technology. The bonding method can be used with the bonding apparatus provided in this application. The bonding method includes acquiring the bonding error of a wafer group after initial bonding. The bonding error includes the position information, error offset value, and error offset direction of each error detection point, wherein each error detection point is distributed at different positions within the wafer group. If the bonding error exceeds a first preset value, the bonding tray is controlled according to the bonding error to adjust the relative position of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to the first preset value, wherein the first preset value is the maximum bonding error that meets the bonding process requirements. This bonding method, by performing bonding alignment compensation on the wafer group after initial bonding and before bonding annealing, is beneficial for improving bonding accuracy and yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically, to a bonding apparatus, a bonding method, a computer device, and a medium. Background Technology

[0002] Wafer-to-wafer bonding, also known as direct wafer bonding, refers to the process of bonding two wafers together. In the semiconductor technology field, direct wafer bonding technology enables three-dimensional integration between wafers. This involves bonding two or more wafers with identical or different functions. With advancements in technology, the requirements for alignment precision between the two wafers are becoming increasingly stringent. When bonding fails, it typically results in the scrapping of two or more wafers, leading to extremely high costs. The cause of bonding failure may be insufficient wafer alignment precision. Summary of the Invention

[0003] This invention discloses a bonding apparatus, a bonding method, a computer device, and a medium to solve the technical problem of poor alignment accuracy during wafer-to-wafer bonding.

[0004] To solve the above problems, the present invention adopts the following technical solution: In a first aspect, some embodiments of this application provide a bonding apparatus including a bonding tray, an alignment error detection device, and a controller. The bonding tray includes a support disk and multiple compensation units, wherein the support disk has a support surface. The support surface can be used to support a wafer assembly after initial bonding. The compensation units are distributed on the support surface and can be used to support and / or hold the wafers located on the support surface. The alignment error detection device is used to detect bonding errors in the wafer assembly. The controller is connected to both the alignment error detection device and the compensation units, and the controller can be used to control the deformation of at least a portion of the wafer assembly acting on it towards or away from the support surface.

[0005] In some embodiments, the bonding apparatus further includes an apparatus body. The apparatus body has an annealing chamber that can be used to accommodate the wafer assembly after initial bonding, and an alignment error detection device is disposed in the annealing chamber.

[0006] In some embodiments, the bonding apparatus includes two bonding trays. One of the bonding trays is a first bonding tray, and the other is a second bonding tray. The first bonding tray and the second bonding tray are disposed opposite each other.

[0007] In some embodiments, at least one of the first bonding tray and the second bonding tray is configured to be rotatable relative to the other and / or translateable along the bearing surface.

[0008] Secondly, embodiments of this application also provide a bonding method. This bonding method can be applied to the bonding apparatus provided in this application. The bonding method includes: The bonding error of the wafer assembly after initial bonding is obtained. The bonding error includes the position information, error offset value and error offset direction of each error detection point. The error detection points are distributed at different positions of the wafer assembly. If the bonding error is greater than the first preset value, the bonding tray is controlled according to the bonding error to adjust the relative position of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to the first preset value, wherein the first preset value is less than or equal to the maximum bonding error required by the bonding process.

[0009] Thirdly, this application provides a computer device. The computer device includes at least one computer storage medium and at least one processor. The at least one computer storage medium stores a control program for the bonding method provided in the embodiments of this application, and the at least one processor is used to execute the control program stored on the at least one computer storage medium.

[0010] Fourthly, this application provides a computer-readable storage medium. The medium stores a program that can be loaded by a processor and executed using the bonding method provided in the embodiments of this application.

[0011] The technical solution adopted in this invention can achieve the following beneficial effects: The bonding equipment provided in this application can perform alignment compensation on the wafer group formed by the initial bonding of two wafers, so as to compensate for the bonding error of the initial bonding of the wafers again before the wafer bonding annealing, thereby improving the alignment accuracy of the wafer bonding.

[0012] The bonding method provided in this application can compensate for alignment errors of the initially bonded wafer group before the wafer bonding annealing process, so as to improve the alignment accuracy. Attached Figure Description

[0013] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a perspective view of a bonding tray provided in some embodiments of this application; Figure 2 This is a cross-sectional schematic diagram of a bonding tray provided in some embodiments of this application. Figure 1 ; Figure 3 This is a cross-sectional schematic diagram of a bonding tray provided in some embodiments of this application. Figure 2 ; Figure 4 This is a schematic diagram of the wafer and bonding tray provided in some embodiments of this application. Figure 1 ; Figure 5 This is a schematic diagram of the bonding device provided in some embodiments of this application after initial bonding and before bonding error compensation. Figure 1 ; Figure 6 This is a schematic diagram of the bonding device provided in some embodiments of this application after initial bonding and bonding error compensation. Figure 1 ; Figure 7 This is a schematic diagram of the bonding device provided in some embodiments of this application after initial bonding and before bonding error compensation. Figure 2 ; Figure 8 This is a schematic diagram of the bonding device provided in some embodiments of this application after initial bonding and bonding error compensation. Figure 2 ; Figure 9 This is a control principle diagram of bonding error compensation provided in some embodiments of this application; Figure 10 This is a schematic diagram of a bonding method provided in some embodiments of this application; Figure 11 This is a schematic diagram showing the distribution of bonding errors provided in some embodiments of this application; Figure 12 This is a schematic diagram of the translation error obtained after decomposing the bonding error according to some embodiments of this application; Figure 13 This is a schematic diagram of the scaling error obtained after decomposing the bonding error according to some embodiments of this application; Figure 14 This is a schematic diagram of the rotational error obtained after decomposing the bonding error according to some embodiments of this application; Figure 15 This application provides the principle of the driving part in the topography compensation column according to some embodiments. Figure 1 ; Figure 16 This application provides the principle of the driving part in the topography compensation column according to some embodiments. Figure 2 .

[0015] Figure Labels Explanation: 10-Wafer set; 11-Wafer; 11a-First alignment mark; 11b-Second alignment mark; 100-Bonding tray; 110-Carrier tray; 101-Carrier surface; 102-Pressure groove; 103-Channel; 104-Adsorption hole; 120-Compensation unit; 121-Support part; 122-Drive part; 100a-First bonding tray; 100b-Second bonding tray; 200-Error detection device; 300-Controller; 400-Cover plate; 401-Vent. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be described in detail below. Obviously, the described embodiments are merely some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other implementation methods obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0017] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0018] The following is in conjunction with the appendix Figures 1 to 10 The bonding device, bonding method, computer device and medium provided in this application will be described in detail through specific embodiments and application scenarios.

[0019] In related technologies, bonding equipment includes two bonding trays arranged opposite each other. For example, the two bonding trays are arranged vertically and opposite each other. Specifically, during the bonding of two wafers, one wafer is fixed to the upper bonding tray, and the other is fixed to the lower bonding tray. During the initial bonding process, the two bonding trays move relative to each other to align the wafers to be bonded on the two bonding trays. After the wafers to be bonded are aligned, the two bonding trays move closer together so that the bonding surfaces of the two wafers approach and adhere to each other, thereby completing the initial bonding of the two wafers.

[0020] Since the initial bonding of the two wafers relies primarily on intermolecular forces (hydrogen bonds or van der Waals forces) for adsorption, the resulting wafer assembly exhibits poor stability. Further annealing is required to transform the weak intermolecular forces of the initial bonding stage into strong covalent bonds, thereby achieving a permanent and robust bond between the two wafers. In related technologies, after the initial bonding of the two wafers, an annealing process is immediately performed to permanently fix the two wafers together.

[0021] In related technologies, during wafer bonding, the release of internal stress in the wafer and / or wafer deformation caused by previous processes can lead to significant alignment errors even after initial bonding.

[0022] Reference Figure 1 and Figure 9 The bonding device provided in this application includes a bonding tray 100, an alignment error detection device 200, and a controller 300.

[0023] The bonding tray 100 includes a carrier plate 110 and a plurality of compensation units 120. Exemplarily, the carrier plate 110 is a basic structural component that can provide a mounting base for the compensation units 120.

[0024] The carrier disk 110 has a carrier surface 101. The carrier surface 101 can be used to carry the initially bonded wafer assembly 10. For example, the initially bonded wafer assembly 10 includes two overlapping wafers 11. For example, the carrier surface 101 can be circular.

[0025] Reference Figure 2 The compensation units 120 are distributed on the bearing surface 101. The compensation units 120 can be used to support and / or adsorb the wafer 11 located on the bearing surface 101.

[0026] Reference Figure 9 The alignment error detection device 200 is used to detect the bonding error of the wafer assembly 10. The controller 300 is connected to the alignment error detection device 200 and the compensation unit 120 respectively, and the controller 300 can be used to control the deformation of at least a portion of the wafer assembly 10 by the compensation unit 120 in the direction closer to or away from the bearing surface 101.

[0027] In some embodiments, the compensation unit 120 may directly contact and act on the deformation of the wafer assembly 10. In some embodiments, the compensation unit 120 may act on the wafer assembly 10 by means of electric field force, magnetic force and / or air pressure, so that the portion of the wafer assembly 10 opposite to each compensation unit 120 may deform toward or away from the support surface 101.

[0028] In the above embodiments, the compensation unit 120 is distributed on the bearing surface 101, and can then control the compensation unit 120 to act on the wafer group 10 according to the bonding error of different regions of the wafer group 10, so that different regions of the wafer group 10 can undergo different degrees of deformation in different directions to compensate for the bonding error of different regions of the wafer group 10.

[0029] It should be noted that the two wafers 11 in the wafer assembly 10 overlap in the thickness direction of the wafers 11. Therefore, by locally deforming the wafer assembly 10 along the thickness direction, the bonding sites of the two wafers 11 can be moved relative to each other, so as to compensate for the bonding errors in different areas of the wafer assembly 10 and improve the bonding alignment accuracy.

[0030] Specifically, refer to Figure 5 The bonding apparatus includes a first bonding tray 100a and a second bonding tray 100b, which are disposed opposite to each other, and at least one of the first bonding tray 100a and the second bonding tray 100b is the bonding tray 100 provided in the embodiments of this application.

[0031] For example, in wafer group 10, one of the two wafers 11 is positioned and engaged with the first bonding tray 100a, and the other is positioned and engaged with the second bonding tray 100b. For example, the first bonding tray 100a can be positioned and engaged with the wafer 11 by adsorption, so that the first bonding tray 100a can drive the wafer 11 fixed thereto to rotate and / or move. For example, the second bonding tray 100b can be positioned and engaged with the wafer 11 by adsorption, so that the second bonding tray 100b can drive the wafer 11 fixed thereto to rotate and / or move. Specifically, the adsorption method of the second bonding tray 100b on the wafer 11 can be, but is not limited to, one or both of negative pressure adsorption and electrostatic adsorption.

[0032] Reference Figure 5 In some embodiments, the first bonding tray 100a is the bonding tray 100 provided in the embodiments of this application. Specifically, each wafer 11 in the wafer group 10 has a first alignment mark 11a and a second alignment mark 11b. (Refer to...) Figure 5 The spacing between the first alignment mark 11a and the second alignment mark 11b in the wafer 11 of the second bonding tray 100b is the first spacing. The spacing between the first alignment mark 11a and the second alignment mark 11b in the wafer 11 of the first bonding tray 100a is the second spacing. During bonding, the first alignment mark 11a in the wafer 11 of the first bonding tray 100a is aligned with the first alignment mark 11a in the wafer 11 of the second bonding tray 100b; the second alignment mark 11b in the wafer 11 of the first bonding tray 100a is aligned with the second alignment mark 11b in the wafer 11 of the second bonding tray 100b. (Refer to...) Figure 5 After initial bonding, the first spacing is greater than the second spacing.

[0033] Reference Figure 6 The wafer assembly 10 can be protruded in a first direction by controlling the compensation unit 120 located between the first alignment mark 11a and the second alignment mark 11b in the first bonding tray 100a, wherein the first direction is the direction from the first bonding tray 100a to the second bonding tray 100b. (Refer to...) Figure 6 The radius of curvature corresponding to the protrusion deformation of wafer 11 located on the first bonding tray 100a is the first radius; the radius of curvature corresponding to the protrusion deformation of wafer 11 located on the second bonding tray 100b is the second radius; the first radius is smaller than the second radius. Since the first radius is smaller than the second radius, the alignment error of the first alignment mark 11a and the second alignment mark 11b in the two wafers 11 in the wafer group 10 is reduced.

[0034] In some embodiments, the alignment error detection device 200 can be, but is not limited to, an infrared transmission detection device. Specifically, the alignment error detection device 200 can be any one or more devices in the prior art that can be used for non-destructive testing of wafer-to-wafer bonding progress.

[0035] In some embodiments, the compensation unit 120 is movable relative to the support plate 110. Exemplarily, the compensation unit 120 is movable relative to the support plate 110 in a direction perpendicular to the support surface 101. In some embodiments, at least a portion of the compensation unit 120 may deform such that a portion of the compensation unit 120 is movable relative to the support plate 110.

[0036] Reference Figure 5 and Figure 6 For example, the compensation unit 120 can switch between a first state and a second state relative to the carrier disk 110. (Refer to...) Figure 5 When the compensation unit 120 is in the first state, the top of the compensation unit 120 is flush with the bearing surface 101, or the top of the compensation unit 120 is recessed into the bearing surface 101. (Refer to...) Figure 6 When the compensation unit 120 is in the second state, the top of the compensation unit 120 protrudes at least partially from the bearing surface 101 and is used to support the deformation of the wafer assembly 10 in a direction away from the bearing surface 101.

[0037] In some embodiments, the compensation unit 120 may be a telescopic column. The telescopic column is movably mounted on the support plate 110.

[0038] In some embodiments, reference is made to Figure 3 and Figure 4The carrier disk 110 has a plurality of pressure grooves 102. The pressure grooves 102 are distributed on the carrier surface 101. Exemplarily, the openings of the pressure grooves 102 are located on the carrier surface 101. During the bonding process of the wafer 11, the wafer 11 is supported on the carrier surface 101 such that the pressure in the pressure grooves 102 can cause the wafer 11 to deform in a direction away from or towards the pressure grooves 102.

[0039] For example, the air pressure within the pressure tank 102 is reduced so that the wafer 11 can deform towards the side closer to the pressure tank 102 under the influence of air pressure. Specifically, when the air pressure within the pressure tank 102 is lower than the air pressure of the environment where the support disk 110 is located, the wafer 11 can deform into the pressure tank 102 under the influence of air pressure. In some embodiments, the air pressure within the pressure tank 102 can be reduced to a lower level than the air pressure of the environment where the support disk 110 is located by evacuating gas from the pressure tank 102.

[0040] For example, the air pressure within the pressure tank 102 is increased so that the wafer 11 can deform towards the side away from the pressure tank 102 under the influence of air pressure. Specifically, when the air pressure within the pressure tank 102 is greater than the air pressure of the environment where the support disk 110 is located, the wafer 11 can deform towards the pressure tank 102 under the influence of air pressure. In some embodiments, the air pressure within the pressure tank 102 can be increased to be greater than the air pressure of the environment where the support disk 110 is located by supplying gas into the pressure tank 102.

[0041] Reference Figure 3 The compensation unit 120 is disposed in the air pressure groove 102, and the compensation unit 120 can extend and retract between a first state and a second state along a first direction, the first direction intersecting the bearing surface 101. When the compensation unit 120 is in the first state, the compensation unit 120 is recessed into the bearing surface 101. When the compensation unit 120 is in the second state, at least a portion of the compensation unit 120 protrudes from the bearing surface 101.

[0042] In some embodiments, the width of the pressure groove 102 is 5 mm to 20 mm. The length of the pressure groove 102 is 5 mm to 20 mm, wherein the length of the pressure groove 102 is greater than or equal to the width of the pressure groove 102. In some embodiments, the width of the pressure groove 102 is 10 mm to 20 mm. In some embodiments, the depth of the pressure groove 102 is 0.1 mm to 1 mm. In some embodiments, the depth of the pressure groove 102 can be 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, or 0.9 mm.

[0043] In some embodiments, the pressure grooves 102 are uniformly distributed on the carrier disk 110 so that the bonding tray 100 can compensate for bonding errors in different regions of the wafer assembly 10. In optional embodiments, the pressure grooves 102 are arranged in an array on the carrier disk 110. Exemplarily, the pressure grooves 102 are arranged in a ring array on the carrier disk 110 to adapt to the shape of the wafer assembly 10.

[0044] In some embodiments, the air pressure grooves 102 may be distributed in a square array on the support plate 110. Exemplarily, the spacing between two adjacent columns of air pressure grooves 102 is a third spacing, and the spacing between two adjacent columns of air pressure grooves 102 is a fourth spacing, with the third spacing equal to the fourth spacing. This embodiment is beneficial for improving the uniformity of the distribution of the air pressure grooves 102 on the support surface 101.

[0045] In some embodiments, the pressure grooves 102 may be distributed in a circular array on the carrier disk 110. Exemplarily, the center of the array of pressure grooves 102 coincides with the center of the carrier surface 101. Exemplarily, during the bonding process of wafer 11, the center of wafer 11 coincides with the center of the array of pressure grooves 102. This embodiment is beneficial for accommodating and compensating for scaling errors after the initial bonding of wafer 11.

[0046] In some embodiments, the spacing between two adjacent pressure grooves 102 distributed on the same circumference is the fifth spacing. The difference in radius between two adjacent circumferential arrays and the center of the array is the sixth spacing. The fifth spacing is equal to the sixth spacing.

[0047] Reference Figure 4 In some embodiments, the bonding tray 100 further includes a cover plate 400. The cover plate 400 is disposed on the support tray 110 and covers the air pressure groove 102. The cover plate 400 is elastically deformable toward or away from the bottom of the air pressure groove 102. Exemplarily, the compensation unit 120 may be supported on the side of the cover plate 400 adjacent to the air pressure groove 102.

[0048] Specifically, the side of the cover plate 400 away from the pressure groove 102 is used to support the wafer 11. In this embodiment, the cover plate 400 can uniformly disperse the adsorption stress and adjust the local stress during the process through elastic deformation, which helps to avoid stress concentration on the wafer 11.

[0049] Specifically, the cover plate 400 is made of an elastic material, meaning it can undergo elastic deformation under external force. In some embodiments, the cover plate 400 can recover its deformation after the external force acting on it is removed. Specifically, when the cover plate 400 recovers its deformation, the side of the cover plate 400 away from the air pressure groove 102 is a flat surface.

[0050] Reference Figure 4In some embodiments, the cover plate 400 has vents 401. The vents 401 penetrate the cover plate 400 and communicate with the pressure groove 102. Exemplarily, the vents 401 penetrate the cover plate 400 along its thickness direction. Specifically, the cover plate 400 has a plurality of vents 401, and each pressure groove 102 has a plurality of vents 401 in a corresponding area. This embodiment can disperse the adsorption force acting on the wafer 11 through the vents 401, and is beneficial to improving the adjustment accuracy of the adsorption force acting on the wafer 11.

[0051] In the above embodiments, under negative pressure within the pressure tank 102, adsorption force is generated through the pores 401, thereby causing deformation of the wafer 11. Specifically, in the process of compensating for bonding errors in the wafer 11, the magnitude of deformation in the corresponding region of the wafer 11 can be controlled by adjusting the pressure within the pressure tank 102. Specifically, the lower the pressure within the pressure tank 102, the greater the deformation in the corresponding region of the pressure tank 102, and thus the greater the amount of bonding error compensated.

[0052] In some embodiments, a vent 401 is correspondingly provided with a compensation unit 120. The cover plate 400 has a third state and a fourth state relative to the compensation unit 120. When the cover plate 400 is in the third state, the cover plate 400 and the compensation unit 120 are in a sealing fit, and the compensation unit 120 seals the corresponding vent 401. Specifically, the sealing fit between the compensation unit 120 and the cover plate 400 can be achieved by the elongation and deformation of the compensation unit 120, thereby sealing the vent 401 corresponding to the compensation unit 120.

[0053] When the cover plate 400 is in the fourth state, the cover plate 400 and the compensation unit 120 are no longer sealed together, and the vent 401 is connected to the air pressure groove 102. Specifically, the compensation unit 120 can be shortened by deforming to release the seal between the compensation unit 120 and the cover plate 400, so that the vent 401 corresponding to the compensation unit 120 is connected to the air pressure groove 102.

[0054] For example, the cover plate 400 is in a fourth state relative to the compensation unit 120, i.e., the vent 401 is open, so that the negative pressure in the pressure groove 102 can attract the wafer 11 to form a concave deformation. For example, the cover plate 400 is in a third state relative to the compensation unit 120, i.e., the vent 401 is closed. Specifically, the cover plate 400 can be made to bulge away from the pressure groove 102 by increasing the pressure in the pressure groove 102.

[0055] In some embodiments, when the compensation unit 120 is in its initial state, i.e., when the compensation unit 120 has not undergone any expansion or contraction deformation, the end of the compensation unit 120 near the cover plate 400 abuts against the side of the cover plate 400 adjacent to the pressure groove 102, and seals the vent 401 corresponding to the compensation unit 120. For example, when it is necessary to compensate for bonding errors by the protrusion deformation of the wafer 11, the compensation unit 120 extends in a direction protruding from the bearing surface 101, so that the compensation unit 120 can still maintain the seal of the vent 401 during the deformation of the cover plate 400 away from the pressure groove 102.

[0056] In some embodiments, when the compensation unit 120 is in its initial state, i.e., when the compensation unit 120 has not undergone any expansion or contraction deformation, the compensation unit 120 is recessed into the bearing surface 101. Specifically, after the wafer 11 is placed on the bearing disk 110, the wafer 11 can be deformed towards the side closer to the pressure groove 102 by the cover plate 400.

[0057] In an optional embodiment, the compensation unit 120 can detect the pressure between the compensation unit 120 and the cover plate 400. Exemplarily, the compensation unit 120 has a pressure sensor to detect the pressure between the cover plate 400 and the compensation unit 120. In some embodiments, at least a portion of the piezoelectric material of the compensation unit 120 is used to partially detect the pressure between the cover plate 400 and the compensation unit 120.

[0058] For example, after the wafer 11 is placed on the carrier disk 110 and positioned, the compensation unit 120 elongates and deforms. During the process of compensating for protrusion defects on the bonding surface, when the pressure between the compensation unit 120 and the cover plate 400 reaches a preset pressure, the elongation and deformation of the compensation unit 120 is stopped, so that the compensation unit 120 can adapt to the elongation and deformation of the wafer 11's morphological characteristics. The preset pressure can be determined based on the thickness and type of the wafer 11, as well as the magnitude of the bonding pressure during the wafer bonding process. Specifically, during the process of compensating for bonding errors, the pressure of the gas pressure groove 102 can be adjusted first to ensure that the bonding error of the wafer group 10 meets the process requirements, and then the elongation and deformation of the compensation unit 120 can be adjusted to adapt to the morphological characteristics of the wafer 11, providing better support for the wafer 11.

[0059] In some embodiments, the cover plate 400 is sealed to the opening of each pressure groove 102. Exemplarily, the cover plate 400 is laid flat on the support tray 110. Specifically, one cover plate 400 can cover multiple pressure grooves 102 and seal to the opening of each pressure groove 102, so that the different pressure grooves 102 can be independent of each other. Exemplarily, the cover plate 400 covers the support surface 101 of the support tray 110, and the surface of the cover plate 400 away from the support tray 110 forms a complete surface supporting the wafer 11.

[0060] In some embodiments, the bonding tray includes multiple cover plates 400, each cover plate 400 corresponding to a pressure groove 102, and the openings of the cover plate 400 and the corresponding pressure groove 102 are sealed together. Specifically, the surface of each cover plate 400 away from the pressure groove 102 is flush with the bearing surface 101 and is spliced ​​with the bearing surface 101 to form the surface supporting the wafer 11.

[0061] In some embodiments, the diameter of the vent 401 is from 0.2 mm to 1.5 mm. Exemplarily, the aperture of the vent 401 can be 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm, 0.6 mm, 0.65 mm, 0.7 mm, 0.75 mm, 0.8 mm, 0.85 mm, 0.9 mm, 0.95 mm, 1 mm, 1.1 mm, 1.2 mm, 1.3 mm, or 1.4 mm. In some embodiments, the diameter of the compensation unit 120 is larger than the diameter of the vent 401, so that the compensation unit 120 can seal the vent 401.

[0062] Reference Figure 4 In some embodiments, the carrier tray 110 includes multiple channels 103, each channel 103 corresponding to a pressure groove 102, and gas can be discharged or enter the pressure groove 102 corresponding to the channel 103 through the channel 103. Exemplarily, the pressure groove 102 is connected to a pneumatic control system via a pipe. Alternatively, each pressure groove 102 can be independently controlled by the pneumatic control system. Specifically, by independently controlling the air pressure in each pressure groove 102, the pneumatic control system helps improve the compensation accuracy of the bonding tray.

[0063] Reference Figure 4 In some embodiments, each pressure groove 102 is provided with multiple compensation units 120, and the compensation units 120 are evenly distributed within the pressure groove 102. For example, when the bonding error area is large, the deformation of a large area of ​​protrusion or depression can be achieved first by adjusting the air pressure in the pressure groove 102, and then the deformation of a smaller local area of ​​protrusion or depression can be achieved by the compensation units 120.

[0064] For example, if the area of ​​the bonding error region is greater than or equal to the area of ​​the corresponding air pressure groove 102, a larger area of ​​convex deformation or concave deformation can be achieved by adjusting the air pressure in the air pressure groove 102.

[0065] In some embodiments, the area of ​​the bonding error region is a first area, and the area of ​​the opening of the air pressure groove 102 opposite to the bonding error region is a second area. When the first area is greater than or equal to 2 / 3 of the second area, the larger area of ​​convex or concave deformation is achieved by first adjusting the air pressure in the air pressure groove 102.

[0066] In some embodiments, each compensation unit 120 can be independently extended or retracted. Specifically, the extension or shortening of each compensation unit 120 can be controlled as needed to compensate for bonding errors in smaller areas and improve the bonding accuracy of the wafer 11.

[0067] In some embodiments, at least a portion of the compensation unit 120 is made of a piezoelectric material. Specifically, the compensation unit 120 can deform along a first direction under the action of an electric field, the first direction intersecting the bearing surface 101. In an optional embodiment, the first direction is perpendicular to the bearing surface 101. In this embodiment, the deformation of the compensation unit 120 in the first direction can be adjusted by adjusting the electric field strength in the region where the compensation unit 120 is located. Specifically, the deformation of the piezoelectric material under the action of an electric field can be controlled at the nanometer level. Therefore, in this embodiment, the compensation unit 120 can achieve nanometer-level concave or convex deformation of the wafer 11. Thus, this embodiment can achieve relatively small scaling errors and improve the bonding alignment accuracy of the two wafers 11.

[0068] In some embodiments, the compensation unit 120 is a piezoelectric ceramic pillar. Specifically, the array formed by the compensation units 120 can be a piezoelectric ceramic actuator. Ceramics are composed of microcrystals. Each crystal is composed of atoms carrying either a positive or negative charge. Most ceramics have a balance of positive and negative charges. However, in their natural state, some dielectric ceramics (called ferroelectrics) carry an imbalance of positive and negative charges within the crystal, resulting in a bias charge, or spontaneous polarization. Upon firing, ferroelectric ceramics immediately undergo spontaneous polarization and generate random polar axes. Overall, the ceramic appears to have a balanced positive and negative charge. However, with the application of high DC voltages, the polar axes generated by spontaneous polarization align in the same direction, and even when the voltage is removed, the polar axes do not disappear. The process of aligning the spontaneously polarized polar axes is called the polarization process. If the polarization process is applied to ferroelectric ceramics, piezoelectric ceramics are generated.

[0069] Reference Figure 15 When the center of a positive charge in a piezoelectric ceramic is connected to the positive terminal of a power source, and the center of a negative charge is connected to the negative terminal, the centers of the positive and negative charges within the ceramic will move closer to each other, causing the ceramic to shrink. Specifically, when the center of a positive charge in a piezoelectric ceramic column is connected to the positive terminal of a power source, and the center of a negative charge is connected to the negative terminal, the piezoelectric ceramic column will shorten and deform.

[0070] Reference Figure 16When the center of a positive charge in a piezoelectric ceramic is connected to the negative terminal of a power source, and the center of a negative charge is connected to the positive terminal, the centers of the positive and negative charges within the ceramic will move away from each other, causing the ceramic to expand. Specifically, when the center of a positive charge in a piezoelectric ceramic column is connected to the negative terminal of a power source, and the center of a negative charge is connected to the positive terminal, the piezoelectric ceramic column will elongate and deform.

[0071] In some embodiments, the compensation unit 120 includes a support portion 121 and a drive portion 122. The drive portion 122 is disposed on the support plate 110. The support portion 121 is connected to the drive portion 122. The drive portion 122 can drive the top of the support portion 121 to protrude from or be recessed into the support surface 101. For example, the drive portion 122 is made of a piezoelectric material. For example, the drive portion 122 is a piezoelectric ceramic column.

[0072] In the above embodiments, after the compensation unit 120 is stretched and deformed, the radial dimension of the part of the compensation unit 120 supported on the wafer 11 remains unchanged, which is beneficial to reducing the pressure on the wafer 11.

[0073] In some embodiments, the drive unit 122 may also be a linear motor. For example, the drive unit 122 may be, but is not limited to, a voice coil motor, a coreless linear motor, or a cored linear motor.

[0074] In some embodiments, the carrier tray 110 further has a plurality of adsorption holes 104, which penetrate the carrier surface 101 and are used to adsorb the wafers 11 located on the carrier surface 101. In some embodiments, when the carrier surface 101 is provided with a cover plate 400, the cover plate 400 is provided with a through hole opposite to and communicating with the adsorption holes 104. Specifically, one end of the through hole on the cover plate 400 communicates with the adsorption hole 104, and the other end penetrates the surface of the cover plate 400 away from the carrier tray 110. In the above embodiments, the adsorption holes 104 can be used to adsorb and position the wafers 11 located on the carrier tray. In some embodiments, the adsorption holes 104 are spaced apart around the pressure groove 102.

[0075] In some embodiments, the bearing surface 101 is circular. Adsorption holes 104 are spaced apart along the circumference of the bearing surface 101. This embodiment is beneficial because the wafer 11 is subjected to uniform adsorption force in all directions, thereby providing reliable fixation of the wafer 11 to the bonding tray 100.

[0076] In some embodiments, the bonding apparatus further includes an apparatus body with an annealing chamber for accommodating the initially bonded wafer assembly 10, and an alignment error detection device 200 disposed in the annealing chamber. Specifically, in this embodiment, the bonding tray 100 can be used to maintain the shape of the wafer assembly 10 during the annealing process to avoid deformation of the wafer assembly 10 during annealing that could affect the bonding accuracy.

[0077] In some embodiments, the bonding apparatus includes a first bonding tray 100a and a second bonding tray 100b, which are disposed opposite to each other. In some embodiments, at least one of the first bonding tray 100a and the second bonding tray 100b is the bonding tray 100 provided in the embodiments of this application. For example, the first bonding tray 100a is the lower bonding tray, and the first bonding tray 100a is the bonding tray 100 provided in the embodiments of this application.

[0078] Specifically, before the annealing process, the wafer assembly 10 formed after initial bonding can be subjected to convex or concave deformation by the first bonding tray 100a and / or the second bonding tray 100b to compensate for the bonding error of the wafer assembly 10.

[0079] In some preferred embodiments, before the annealing process, the first bonding tray 100a can be used to cause bulge deformation or depression deformation of the wafer group 10 formed after initial bonding, so as to compensate for the bonding error of the wafer group 10.

[0080] Since the alignment accuracy of wafer bonding is on the order of magnitude, some embodiments can utilize the gap between the bonding tray and the wafer 11 to provide clearance for the deformation of the wafer 10 during the process of convex or concave deformation of the wafer assembly 10.

[0081] In some embodiments, both the first bonding tray 100a and the second bonding tray 100b are the bonding tray 100 provided in the embodiments of this application. During the process of compensating for the initial bonding error of the wafer 11, the first bonding tray 100a and the second bonding tray 100b can work together on the wafer assembly 10 to provide space between the first bonding tray 100a and the second bonding tray 100b to avoid protrusion deformation and / or depression deformation of the wafer assembly 10, so as to compensate for the initial bonding error through protrusion deformation and / or depression deformation of the wafer assembly 10.

[0082] In some embodiments, at least one of the first bonding tray 100a and the second bonding tray 100b is configured to be rotatable relative to the other. This implementation can compensate for rotational errors after the initial bonding of the wafer 11 by the relative rotation of the first bonding tray 100a and the second bonding tray 100b.

[0083] At least one of the first bonding tray 100a and the second bonding tray 100b is configured to be translatable relative to the other along the bearing surface 101. This implementation can compensate for translation errors after the initial bonding of the wafer 11 by the relative translation of the first bonding tray 100a and the second bonding tray 100b.

[0084] In some embodiments, this application also provides a bonding method. Exemplarily, this bonding method can be applied to the bonding apparatus provided in this application. The bonding method provided in some embodiments of this application includes: Step S100: Obtain the bonding error of the wafer group after initial bonding. The bonding error includes the position information of each error detection point, the error offset value, and the error offset direction. The error detection points are distributed at different positions in the wafer group.

[0085] For example, the alignment accuracy between two wafers 11 in wafer assembly 10 can be detected by alignment error detection device 200. For example, alignment error detection device 200 is an infrared transmission detection device.

[0086] Reference Figure 11 Error detection points can be alignment marks pre-calibrated on wafer 11. Specifically, Figure 11 In the diagram, the starting point of the arrow indicates the location of the error detection point, and the length of the arrow represents the magnitude of the error offset value. Specifically, the larger the error offset value, the longer the corresponding arrow. The direction of the arrow indicates the direction of the error offset.

[0087] Step S300: If the bonding error is greater than the first preset value, control the bonding tray according to the bonding error and adjust the relative position of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to the first preset value, wherein the first preset value is less than or equal to the maximum bonding error required by the bonding process.

[0088] Specifically, the bonding error is greater than a first preset value, meaning the error offset is greater than the first preset value. The first preset value can be set according to the bonding process requirements. Therefore, this embodiment does not describe the specific magnitude of the first preset value.

[0089] In some embodiments, the first preset value can be the target bonding accuracy of the bonding process. The first preset value is less than the maximum bonding error required by the bonding process. This embodiment can push the bonding accuracy to a higher level to compensate for dynamic random errors in the bonding process and improve the yield.

[0090] In some embodiments, adjusting the relative positions of the first bonding tray 100a and the second bonding tray 100b adjusts the relative positions between the two wafers 11 in the wafer assembly 10. In some embodiments, adjusting the deformation of at least one of the wafer assemblies 10 adjusts the relative positions of the two wafers 11 in the wafer assembly 10. Exemplarily, adjusting the deformation of at least one of the wafer assemblies 10 can deform a localized deformation region of the wafer assemblies 10.

[0091] In some embodiments, multiple alignment marks are provided between two wafers 11 in wafer assembly 10. For example, the alignment error of each alignment mark can be detected by alignment error detection device 200. Specifically, the corresponding region of each alignment mark in wafer assembly 10 is adjusted according to the alignment error corresponding to each alignment mark. Specifically, the compensation unit 120 can act on the location and / or nearby location of the alignment mark with alignment error, causing local convex or concave deformation of wafer assembly 10 to compensate for the alignment error after initial bonding of wafers 11.

[0092] In some embodiments, step S300, controlling the bonding tray based on the bonding error and adjusting the relative positions of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to a first preset value, includes: Step S310: Determine the scaling error of the wafer assembly based on the bonding error.

[0093] For example, the scaling error of wafer assembly 10 can be obtained through any one or more existing methods. Some embodiments obtain the scaling error by fitting and decomposing the bonding error detected by alignment error detection device 200.

[0094] In some embodiments, reference is made to Figure 13 The center of wafer 11 has an alignment mark, and other alignment marks in wafer 11 are centrally symmetric about the center of wafer 11. Specifically, the scaling error of wafer group 10 is obtained by fitting and decomposing the data with the center of wafer group 10 as a reference. In this embodiment, the scaling error values ​​of the two sets of alignment marks in wafer group 10 that are centrally symmetric about the center of wafer group 10 are centrally symmetric about the center of wafer group 10, which helps to simplify the scaling error.

[0095] Step S320: Determine deformation compensation information based on scaling error. Deformation compensation information includes deformation location information, deformation amount, and deformation direction.

[0096] Step S330: Control the compensation unit to perform wafer group deformation based on deformation compensation information.

[0097] In some embodiments, reference is made to Figure 5 and Figure 6 The first bonding tray 100a is the bonding tray 100 provided in the embodiments of this application. When the spacing between the two alignment marks on the wafer 11 located on the first bonding tray 100a is smaller than the spacing between the corresponding two alignment marks on the wafer 11 located on the second bonding tray 100b, the alignment error corresponding to the two alignment marks can be compensated by controlling the compensation unit 120 on the first bonding tray 100a to bulge and deform the area in the wafer group 10 located between the two alignment marks in a direction away from the first bonding tray 100a.

[0098] In some embodiments, step S300, controlling the bonding tray according to the bonding error and adjusting the relative position of the two wafers 11 in the wafer group 10 until the bonding error of the wafer group 10 is less than or equal to a first preset value, further includes: Step S340: Determine the rotation error of the wafer assembly based on the bonding error.

[0099] For example, the rotational error of wafer assembly 10 can be obtained through any one or more existing methods. Some embodiments obtain the rotational error by fitting and decomposing the bonding error detected by alignment error detection device 200.

[0100] In some embodiments, reference is made to Figure 14 The center of wafer 11 has an alignment mark, and other alignment marks in wafer 11 are centrosymmetric about the center of wafer 11. Specifically, the rotational error of wafer group 10 is obtained by fitting decomposition with the center of wafer group 10 as a reference. In an optional embodiment, the rotation axis of bonding tray 100 passes through the center of wafer group 10.

[0101] Figure 14 This illustrates the rotational error of wafer assembly 10. Specifically, the rotational error corresponds to the alignment mark that is farther away from the center of wafer 11.

[0102] Step S350: Determine rotation compensation information based on rotation error. The rotation compensation information includes rotation angle and rotation direction.

[0103] Step S360: Control the rotation of the bonding tray according to the rotation compensation information.

[0104] The above embodiments can compensate for the rotational error after initial bonding by rotating the bonding tray, thereby improving the wafer bonding alignment accuracy.

[0105] In some embodiments, step S300, controlling the bonding tray based on the bonding error and adjusting the relative positions of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to a first preset value, further includes: Step S370: Determine the translation error of the wafer assembly based on the bonding error.

[0106] For example, the translation error of a wafer set can be obtained through any one or more existing methods. Figure 12 The diagram illustrates the translation error obtained after decomposing the wafer bonding error.

[0107] Step S380: Determine translation compensation information based on translation error. Translation compensation information includes translation distance and translation direction.

[0108] Step S390: Control the bonding tray translation based on the translation compensation information.

[0109] The above embodiments can compensate for translational errors after initial bonding by rotating the bonding tray, thereby improving wafer bonding alignment accuracy.

[0110] In some optional embodiments, steps S310, S340 and S370 can be performed simultaneously or sequentially. Therefore, this embodiment does not limit the order of steps S310, S340 and S370.

[0111] In some embodiments, steps S390 and S360 are performed before step S330 to avoid increasing the resistance to relative rotation and / or translation of the two wafers 11 due to local bulge or depression deformation of the wafer group 10 caused by compensating for scaling errors.

[0112] In some embodiments, after controlling the bonding tray according to the bonding error in step S300 and adjusting the relative positions of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to a first preset value, the bonding method further includes: Step S500: Anneal the wafer assembly.

[0113] For example, the first bonding tray 100a and the second bonding tray 100b may be disposed within the annealing chamber. Alternatively, the first bonding tray 100a and the second bonding tray 100b may be movable into the annealing chamber.

[0114] In the above embodiments, compensating for the initial bonding error of wafer 11 after the initial bonding process and before the annealing process is beneficial to improving the bonding accuracy of wafer 11 and increasing the yield.

[0115] In some embodiments, after obtaining the bonding error of the wafer group after initial bonding in step S100, the bonding method further includes: Step S700: If the bonding error is greater than or equal to the first preset value, determine the residual error based on the bonding error.

[0116] In step S900, if the residual error is greater than the first preset value, the bonding is stopped.

[0117] In some embodiments, steps S700 and S900 precede step S300. The residual error formed during wafer 10 bonding is an error that cannot be eliminated through compensation. This implementation is beneficial for saving computing power and improving efficiency. For example, step S900 precedes steps S320, S350, and S380.

[0118] One embodiment of this application provides a computer device, including at least one computer storage medium and at least one processor. The at least one computer storage medium stores a control program for any of the bonding methods described in the above embodiments, and the at least one processor is used to execute the control program stored on the at least one computer storage medium.

[0119] One embodiment of this application provides a computer-readable storage medium storing a program, the stored program including methods that can be loaded by a processor and processed in any of the above embodiments.

[0120] Those skilled in the art will understand that all or part of the functions of the various methods in the above embodiments can be implemented by hardware or by computer programs. When all or part of the functions in the above embodiments are implemented by computer programs, the program can be stored in a computer-readable storage medium, which may include: read-only memory, random access memory, disk, optical disk, hard disk, etc., and the program is executed by a computer to achieve the above functions. For example, the program can be stored in the memory of a device, and when the program in the memory is executed by the processor, all or part of the above functions can be achieved. In addition, when all or part of the functions in the above embodiments are implemented by computer programs, the program can also be stored in a server, another computer, disk, optical disk, flash drive, or external hard drive, etc., and can be downloaded or copied to the memory of a local device, or the system of the local device can be updated. When the program in the memory is executed by the processor, all or part of the functions in the above embodiments can be achieved.

[0121] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0122] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A bonding apparatus, characterized in that, It includes a bonding tray (100), an alignment error detection device (200), and a controller (300). The bonding tray (100) includes a carrier tray (110) and a plurality of compensation units (120). The carrier tray (110) has a carrier surface (101), which can be used to carry the wafer group (10) after initial bonding. The compensation units (120) are distributed on the carrier surface (101), and the compensation units (120) can be used to support and / or adsorb the wafer (11) located on the carrier surface (101). The alignment error detection device (200) is used to detect the bonding error of the wafer assembly (10); The controller (300) is connected to the alignment error detection device (200) and the compensation unit (120) respectively, and the controller (300) can be used to control the compensation unit (120) to deform at least a portion of the wafer group (10) toward the bearing surface (101).

2. The bonding apparatus according to claim 1, characterized in that, The bearing plate (110) has a plurality of air pressure grooves (102), which are distributed on the bearing surface (101). The compensation unit (120) is disposed in the air pressure groove (102), and the compensation unit (120) can extend and retract between a first state and a second state along a first direction, the first direction intersecting the bearing surface (101); When the compensation unit (120) is in the first state, the compensation unit (120) is recessed into the bearing surface (101). When the compensation unit (120) is in the second state, at least a portion of the compensation unit (120) protrudes from the bearing surface (101).

3. The bonding apparatus according to claim 1, characterized in that, The bonding apparatus further includes an apparatus body, which has an annealing cavity. The annealing cavity can be used to accommodate the wafer assembly (10) after initial bonding, and the alignment error detection device (200) is disposed in the annealing cavity.

4. The bonding apparatus according to any one of claims 1 to 3, characterized in that, The bonding apparatus includes a first bonding tray (100a) and a second bonding tray (100b), wherein at least one of the first bonding tray (100a) and the second bonding tray (100b) is the bonding tray (100). The first bonding tray (100a) is disposed opposite to the second bonding tray (100b).

5. The bonding apparatus according to claim 4, characterized in that, At least one of the first bonding tray (100a) and the second bonding tray (100b) is configured to be rotatable relative to the other and / or translateable along the bearing surface (101).

6. A bonding method, characterized in that, The bonding method can be applied to the bonding apparatus according to any one of claims 1 to 5, wherein the bonding method comprises: The bonding error of the wafer assembly after initial bonding is obtained. The bonding error includes the position information, error offset value and error offset direction of each error detection point, wherein each error detection point is distributed at different positions of the wafer assembly. If the bonding error is greater than a first preset value, the bonding tray is controlled according to the bonding error to adjust the relative position of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to the first preset value, wherein the first preset value is less than or equal to the maximum bonding error required by the bonding process.

7. The bonding method according to claim 6, characterized in that, Controlling the bonding tray based on the bonding error, and adjusting the relative position of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to the first preset value, includes: The scaling error of the wafer set is determined based on the bonding error; Deformation compensation information is determined based on the scaling error, and the deformation compensation information includes deformation location information, deformation amount, and deformation direction. The deformation compensation information is used to control the compensation unit to deform the wafer assembly.

8. The bonding method according to claim 7, characterized in that, Controlling the bonding tray based on the bonding error, adjusting the relative position of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to the first preset value, further includes: The rotational error of the wafer assembly is determined based on the bonding error. Based on the rotation error, rotation compensation information is determined, which includes rotation angle and rotation direction. The bonding tray is rotated according to the rotation compensation information.

9. The bonding method according to claim 8, characterized in that, Controlling the bonding tray based on the bonding error, adjusting the relative position of the two wafers in the wafer group until the bonding error of the wafer group is less than or equal to the first preset value, further includes: The translation error of the wafer assembly is determined based on the bonding error. Based on the translation error, translation compensation information is determined, which includes translation distance and translation direction. The bonding tray is translated according to the translation compensation information.

10. The bonding method according to any one of claims 6 to 9, wherein after controlling the bonding tray according to the bonding error and adjusting the relative positions of the two wafers in the wafer group to such that the bonding error of the wafer group is less than or equal to the first preset value, the bonding method further comprises: The wafer assembly is annealed.

11. The bonding method according to any one of claims 6 to 9, characterized in that, After obtaining the bonding error of the wafer assembly after initial bonding, the bonding method further includes: If the bonding error is greater than or equal to a first preset value, the residual error is determined based on the bonding error. If the residual error is greater than the first preset value, the bonding process is stopped.

12. A computer device comprising at least one computer storage medium and at least one processor, wherein the at least one computer storage medium stores a control program for the bonding method as described in any one of claims 6 to 11, and the at least one processor is configured to execute the control program stored on the at least one computer storage medium.

13. A computer-readable storage medium, characterized in that, The medium stores a program that can be loaded by a processor and executed as the bonding method as described in any one of claims 6 to 11.

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