A semiconductor wafer double-side coating device and a coating method
By designing the reaction chamber, connecting pipes, isolation chamber, and communication mechanism, the problem of insufficient uniformity in silicon wafer coating in the coating device was solved, realizing continuous operation and efficient processing of batch double-sided coating of semiconductor silicon wafers, and ensuring coating quality and sealing performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HUAIAN DONGXU ELECTRONIC MATERIALS CO LTD
- Filing Date
- 2026-06-02
- Publication Date
- 2026-07-24
AI Technical Summary
When existing coating equipment processes multiple silicon wafers simultaneously, it results in insufficient coating uniformity on some wafers and poor airflow control, leading to insufficient gas contact on the outer silicon wafers and affecting coating quality.
The design incorporates a reaction chamber, connecting pipes, isolation chamber, and communication mechanism. Uniform gas distribution is achieved through valve plates and opening/closing components, ensuring uniform film deposition on the surface of each silicon wafer. The isolation chamber provides sealed protection, and the connecting pipes are reliably sealed to the isolation chamber. The mounting bracket and linear actuator control the valve plate's attitude to guide gas flow.
It enables continuous batch double-sided coating of semiconductor silicon wafers, improves coating uniformity and processing efficiency, solves the problem of uneven coating in traditional equipment, and ensures coating quality and sealing.
Smart Images

Figure CN122446154A_ABST
Abstract
Citation Information
Patent Citations
A semiconductor silicon wafer coating device and method thereof
CN118007104B