Solar cell and method of manufacturing the same, photovoltaic module
By introducing a first doped semiconductor layer and a first doped source layer into the solar cell, and optimizing the doping concentration and thickness, the problem of low conversion efficiency of tunnel oxide passivation contact cells was solved, achieving higher conversion efficiency and lower fabrication cost.
Patent Information
- Authority / Receiving Office
- CN Ā· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TRINA SOLAR CO LTD
- Filing Date
- 2026-04-03
- Publication Date
- 2026-07-24
AI Technical Summary
The conversion efficiency of existing tunneling oxide passivated contact cells needs to be improved, mainly because the damage to the tunneling layer during the annealing process of the doped polycrystalline silicon layer leads to a decrease in carrier transport characteristics.
By introducing a first doped semiconductor layer and a first doped source layer into a solar cell, and using annealing to diffuse the doped element into the intrinsic semiconductor layer, the path of the doped element to the tunneling layer is extended, reducing damage to the tunneling layer. Furthermore, carrier transport is optimized by controlling the doping concentration and thickness.
This improved the conversion efficiency of solar cells, reduced damage to the tunneling layer, decreased the material consumption of dopant elements, and lowered the manufacturing cost.
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Figure CN122458538A_ABST