An ultra-thin sensor silicon wafer forming device and method

Abstract

The application belongs to the technical field of silicon wafer processing, in particular to an ultra-thin sensor silicon wafer forming and processing device and method, which comprises a base plate, a movable processing platform, a processing part, a central gear, a stress relief part and a triggering part; the movable processing platform is rotatably installed on the base plate; the processing part is installed on the movable processing platform and used for bearing stacked silicon wafers; through the rotatable movable processing platform and the four groups of processing parts arranged in a circular array, continuous processing is realized; after feeding, the alignment and correction of the upper and lower silicon wafers are automatically completed before pressing; after pressing, the glue overflow scraping is automatically completed before discharging; the conveying, correction, pressing and cleaning processes of the silicon wafers are synchronously completed in the rotation of the movable processing platform, a continuous operation flow with spatial distribution and time parallelism is formed, the waiting and idle time between processes in the single-station equipment is eliminated, and the overall production efficiency is significantly improved.

Description

Technical Field

[0001] This invention belongs to the field of silicon wafer processing technology, specifically a device and method for forming and processing ultra-thin sensor silicon wafers. Background Technology

[0002] In the semiconductor manufacturing field, especially in the wafer-level packaging and integration process of ultra-thin sensors (such as image sensors and MEMS devices), stress relief and interface treatment after wafer bonding are key steps to ensure device performance and reliability.

[0003] Thermal and lattice mismatch stresses generated during heterogeneous material bonding, as well as the colloid overflowing during the bonding process, can easily lead to device delamination, performance drift, or final packaging failure if not handled properly. Existing technologies typically employ step-by-step or highly integrated single-station devices to address these issues. For example, Chinese Patent CN116525519A discloses a semiconductor wafer alignment device; this device, through a complex gear-linkage mechanical linkage mechanism, simultaneously achieves wafer center dislocation correction and stress relief at a single station. In existing technologies, although a complex gear-linkage mechanical linkage mechanism can improve the synchronization of operations to some extent, this device highly integrates multiple functions such as correction, pressure application, and overflow removal into a single static workstation. Although some actions can be linked, the overall process steps, including loading, alignment, pressure application, cleaning, and unloading, still need to be executed sequentially at the workstation. This results in a large amount of idle waiting time for the device, which limits the further reduction of the production cycle and makes it difficult to meet the high throughput requirements of large-scale mass production.

[0004] Therefore, the present invention provides an apparatus and method for forming and processing ultra-thin sensor silicon wafers. Summary of the Invention

[0005] In order to overcome the shortcomings of the prior art, at least one technical problem raised in the background art is solved.

[0006] The technical solution adopted by this invention to solve its technical problem is: an ultra-thin sensor silicon wafer forming and processing device according to this invention, comprising: Chassis; The movable processing platform is rotatably mounted on the chassis; A processing unit, installed on the movable processing platform, is used to support stacked silicon wafers. The processing unit includes a silicon wafer support plate and planetary gears fixedly connected to the silicon wafer support plate. A central gear is fixedly mounted on the chassis and meshes with the planetary gear, configured to drive the planetary gear and the silicon wafer carrier plate to rotate when the movable processing platform rotates. A stress relief unit is disposed on one side of the chassis, corresponding to the stress relief station; and The triggering part is fixed to the movable processing platform and is provided with multiple abutments arranged in a circumferential direction; When the active processing platform rotates, the abutment of the trigger part can intermittently contact and drive the stress relief part to apply a stress-relieving abutment force to the stacked silicon wafers that have rotated to the stress relief station.

[0007] Preferably, the stress relief section includes: The bracket is fixedly attached to the chassis. Both the lifting part and the abutting part are vertically slidably connected to the bracket and are spaced apart; and A lever is rotatably connected to the bracket, and the two ends of the lever are respectively hinged to the top end of the lifting part and the top end of the abutting part; The abutment is configured to lift the lifting portion during rotation, thereby driving the abutment portion downwards via the lever to compress the silicon wafer.

[0008] Preferably, the abutting portion includes: columnar body; A connecting rod, axially fixed to the columnar body and slidably connected to the bracket; and A flexible contact hand, hinged to the bottom of the column, is used to contact the silicon wafer.

[0009] Preferably, the abutting portion further includes: A stop rod, slidably disposed within the internal cavity of the cylindrical body, has a conical shape at its bottom; and The second spring, coaxially arranged with the stop rod, is used to drive the stop rod to reset; When the cone is configured to move upwards as the abutment contacts the silicon wafer, it compresses the flexible abutment hand to expand outwards.

[0010] Preferably, the lifting part includes: A sliding rod is slidably connected to the bracket; A flat plate, fixedly connected to the middle of the slide bar; and A first spring is sleeved on the slide rod, with its two ends respectively abutting between the bottom surfaces of the flat plate and the bracket.

[0011] Preferably, the movable processing platform is provided with a first clearance groove, and the processing part further includes a fixing plate fixedly connected to the first clearance groove. The fixing plate and the first clearance groove together form a circular groove, and the silicon wafer carrier plate is rotatably accommodated in the circular groove.

[0012] Preferably, the processing unit further includes: An arc-shaped plate, fixedly attached to the fixed plate; and The limiting part is slidably connected in the arc-shaped plate and is used to limit the silicon wafer carrier plate when it rotates.

[0013] Preferably, the limiting portion includes: A straight rod slides through the arc-shaped plate; An extrusion plate and an end cap are respectively disposed at both ends of the straight rod; and A third spring is sleeved on the straight rod, and the two ends of the third spring abut against the arc-shaped plate and the end respectively.

[0014] Preferably, a rotating correction plate is fixed to the surface edge of the silicon wafer carrier plate, and the rotating correction plate is configured to correct the vertical misalignment of the silicon wafer when the silicon wafer carrier plate rotates. A telescopic rod is fixed to the side of the extrusion plate facing the arc-shaped plate, and the telescopic rod is slidably engaged with the straight rod; when the rotating correction plate rotates, the extrusion plate retracts into the straight rod based on the telescopic rod.

[0015] A method for forming and processing ultra-thin sensor silicon wafers includes the following steps: S1: Place the stacked silicon wafers to be bonded on the processing section of the movable processing platform, and support them with the silicon wafer carrier plate; S2: Drive the moving processing platform to rotate intermittently at a fixed angle, so that the processing part carrying the silicon wafer passes through each processing station; S3: When the moving processing platform rotates to the unloading station, the stacked silicon wafers that have completed the correction, stress relief and adhesive scraping are removed.

[0016] The beneficial effects of this invention are as follows: 1. The ultra-thin sensor silicon wafer forming and processing device and method of the present invention realizes continuous rotary processing through a rotatable movable processing platform and four sets of processing units arranged in a circumferential array. When the movable processing platform drives the processing units to circulate through the loading, stress relief and unloading stations, the meshing of the central gear and planetary gears drives each processing unit and silicon wafer to rotate synchronously. The alignment and correction of the upper and lower silicon wafers are automatically completed after loading and before pressing, and the overflow adhesive is automatically scraped off after pressing and before unloading. The silicon wafer conveying, correction, pressing and cleaning processes are completed synchronously during the rotation of the movable processing platform. When one processing unit is performing stress relief, the adjacent processing units can simultaneously perform loading or adhesive scraping, forming a spatially distributed and temporally parallel continuous operation flow, eliminating the waiting and idle time between processes in single-station equipment, and significantly improving the overall production efficiency.

[0017] 2. The ultra-thin sensor silicon wafer forming and processing apparatus and method of the present invention, wherein the stress relief unit triggers a lever mechanism through the rotation of the movable processing platform to transform intermittent horizontal contact into stable and controllable vertical pressing, ensuring the synchronization of stress relief action with production cycle and the consistency of pressure; the meshing of planetary gears and central gears transforms the revolution of the platform into a single drive source for the rotation of the processing unit, so that the multiple rotations required for correction and the one rotation required for scraping glue are mechanically and precisely guaranteed by the gear ratio and revolution angle, eliminating the timing error, cumulative error or response delay that may be caused by electrical control. Attached Figure Description

[0018] The invention will now be further described with reference to the accompanying drawings.

[0019] Figure 1 This is a perspective view of the present invention; Figure 2 This is a top view of the present invention; Figure 3 This is a top view of the triggering part and the stress relief part in this invention; Figure 4 yes Figure 3 Sectional view at point AA; Figure 5 This is a perspective view of the stress relief section in this invention; Figure 6 This is an exploded schematic diagram of the contact portion in this invention; Figure 7 This is an exploded view of the present invention; Figure 8 This is an exploded view of the processing section in this invention; Figure 9 This is a bottom view of the active processing platform in this invention; Figure 10 This is a schematic diagram of the movable processing platform and processing unit after rotating 45° in this invention; In the diagram: 1. Chassis; 11. Central gear; 2. Movable processing platform; 21. First clearance groove; 3. Stress relief part; 31. Support; 311. Connecting ear; 32. Lifting part; 321. Slide rod; 322. First spring; 323. Flat plate; 33. Abutting part; 331. Columnar body; 332. Connecting rod; 333. Flexible abutting hand; 334. Abutting rod; 335. Second spring; 34. Lever; 4. Processing part; 41. Fixing plate; 42. Arc plate; 43. Limiting part; 431. Straight rod; 432. Third spring; 433. Extrusion plate; 434. End; 44. Silicon wafer carrier plate; 441. Rotary correction plate; 45. Planetary gear; 5. Triggering part; 51. Abutting block. Detailed Implementation

[0020] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0021] like Figures 1 to 10 As shown in the figure, an ultra-thin sensor silicon wafer forming and processing apparatus according to an embodiment of the present invention includes a chassis 1, a movable processing platform 2, a processing section 4, a central gear 11, a stress relief section 3, and a trigger section 5. The movable processing platform 2 is rotatably mounted on the chassis 1. The processing section 4 is mounted on the movable processing platform 2 and is used to support stacked silicon wafers. The processing section 4 includes a silicon wafer support plate 44 and a planetary gear 45 fixedly connected to the silicon wafer support plate 44. The central gear 11 is fixedly disposed on the chassis 1 and meshes with the planetary gear 45, configured to drive the planetary gear 45 and the silicon wafer support plate 44 to rotate when the movable processing platform 2 rotates. The stress relief section 3 is disposed on one side of the chassis 1, corresponding to the stress relief station. The trigger section 5 is fixedly connected to the movable processing platform 2 and is provided with a plurality of abutments 51 arranged in a circumferential direction. When the active processing platform 2 rotates, the abutment 51 of the trigger part 5 can intermittently contact and drive the stress relief part 3 to apply a stress-relieving abutment force to the stacked silicon wafers that have rotated to the stress relief station.

[0022] In the existing technology, the overall process steps, such as loading, alignment, pressure application, cleaning, and unloading, still need to be executed sequentially at the workstation, resulting in a large amount of idle waiting time in the equipment, which limits the further reduction of the production cycle and makes it difficult to meet the high throughput requirements of large-scale mass production. In one embodiment of the present invention, by rotating the movable processing platform 2 relative to the chassis 1, the meshing of the central gear 11 and the planetary gear 45 drives the processing unit 4 on the movable processing platform 2 to rotate on its own axis as the movable processing platform 2 revolves, thereby realizing functions including upper and lower misalignment correction and stress relief followed by adhesive scraping. In addition, by rotating the movable processing platform 2, the abutment block 51 is driven to intermittently contact and drive the stress relief unit 3, causing the stress relief unit 3 to operate, thereby eliminating the bonding stress between the stacked silicon wafers and squeezing out excess adhesive. In conjunction with the rotatable processing unit 4, the excess adhesive is scraped off simultaneously, so that the stacked silicon wafers after passing through the stress relief station can complete multiple processes of upper and lower misalignment correction, stress relief, and adhesive scraping when they arrive at the unloading station. Based on the continuous feeding achieved by the movable processing platform 2 and the continuous stress relief achieved by the stress relief unit 3, the production cycle is further shortened to meet the needs of large-scale mass production. Specifically, during the bonding of stacked silicon wafers, the pre-stacked silicon wafers are transferred to the movable processing platform 2 via a robotic arm and released onto the surface of the processing unit 4. The processing unit 4 pre-fixes the stacked silicon wafers. Subsequently, the movable processing platform 2 is controlled to rotate at a fixed rhythm. Referring to this embodiment, the movable processing platform 2 rotates 90° each time. When the processing unit 4 on the movable processing platform 2 has rotated a total of 270° from the loading position to the unloading position, it rotates another 90° and then returns to the loading position. During the rotation of the movable processing platform 2, based on the meshing of the planetary gear 45 and the central gear 11, the processing unit 4 can rotate 360° relative to the movable processing platform 2. That is, when the movable processing platform 2 rotates 90°, the processing unit 4 rotates 360°. Therefore, it can be understood that when the processing unit 4 rotates from the loading position to the intermediate position (90°), or from the intermediate position to the stress relief position (90°), or from the stress relief position to the unloading position (90°), the processing unit 4 rotates a total of three revolutions. It should be noted that the purpose of the rotation of the processing unit 4 includes correcting misalignment and scraping adhesive after stress relief. That is, when the processing unit 4 rotates with the movable processing platform 2 from the loading position to the stress relief position, the processing unit 4 can rotate twice to correct misalignment. At the stress relief position, the stress relief unit 3 is driven by the abutment block 51, which causes the stress relief unit 3 to move and eliminate the bonding stress between the stacked silicon wafers and squeeze out excess adhesive. Then, when the processing unit 4 rotates with the movable processing platform 2 from the stress relief position to the unloading position, the processing unit 4 can use one rotation to scrape off the overflowing adhesive, thereby realizing the adhesive scraping function. This results in good bonding effect and overall cleanliness of the stacked silicon wafers output from the unloading position. Therefore, it can be understood that when the processing unit 4 moves from the loading position to the stress relief position (revolving 180°), the processing unit 4 rotates exactly 720°, completing the correction during this process. When it moves from the stress relief position to the unloading position (revolving 90°), the processing unit 4 rotates 360° again to complete one-cycle adhesive scraping. like Figure 10 As shown, T1 is the initial state. In T2, the machining section 4 rotates 45° with the movable machining platform 2. At this time, each machining section 4 in T2 rotates 180°. It should also be noted that, as mentioned above, the loading position, intermediate transfer position, stress relief position, and unloading position are arranged around the circumference of the chassis 1. For details, refer to... Figure 2 As shown, the left side is the stacked silicon wafer loading position. Adjacent to the loading position and in the counterclockwise rotation direction, another position is configured as the transfer position. Symmetrical to the loading position, another position is configured as the stress relief position. Corresponding to the stress relief part 3, symmetrical to the transfer position and the last position adjacent to the loading position is configured as the unloading position. In addition, the moving processing platform 2 is driven by a servo motor + high-precision reducer + its own multi-point positioning. Relying on the absolute positioning accuracy of the servo motor, multiple stop points (0°, 90°, 180°, 270°) are set in the controller.

[0023] like Figures 1 to 7 As shown, the stress relief part 3 includes a support 31, a lifting part 32, an abutment part 33, and a lever 34; the support 31 is fixed to the chassis 1; the lifting part 32 and the abutment part 33 are both slidably connected to the support 31 in a vertical direction and are spaced apart; the lever 34 is rotatably connected to the support 31, and the two ends of the lever 34 are respectively hinged to the top end of the lifting part 32 and the top end of the abutment part 33; the abutment block 51 is configured to lift the lifting part 32 during rotation, so as to drive the abutment part 33 to move downward through the lever 34 to squeeze the silicon wafer.

[0024] In one embodiment of the present invention, the intermittent rotational contact between the trigger part 5 and the stress relief part 3 is transformed into a vertical pressing action on the silicon wafer. Compared with direct pressing, the lever 34 structure can amplify and adjust the final pressing force. Even with a small driving torque, a pressing effect sufficient to eliminate bonding stress can be generated, reducing the load and ensuring strict synchronization between the stress relief action and the platform rotation rhythm without control delay. Specifically, when the movable processing platform 2 rotates, causing a certain abutment 51 of the trigger part 5 fixed on the movable processing platform 2 to move to below the lifting part 32, the abutment 51 will contact and lift the lifting part 32. The upward displacement of the lifting part 32 is converted into a precise and amplified downward displacement of the abutment part 33 through the transmission of the lever 34. The kinetic energy of the rotation of the movable processing platform 2 is converted into a controllable pressing force on the stacked silicon wafers in the vertical direction through the lever 34 principle. The middle part of the lever 34 is hinged in the connecting ear 311 on the bracket 31, and the connecting ear 311 is fixed to the bracket 31.

[0025] like Figures 1 to 7 As shown, the abutment part 33 includes a columnar body 331, a connecting rod 332, and a flexible abutment hand 333; the connecting rod 332 is axially fixed to the columnar body 331 and slidably connected to the bracket 31; the flexible abutment hand 333 is hinged to the bottom of the columnar body 331 and is used to contact the silicon wafer.

[0026] In one embodiment of the present invention, the connecting rod 332 serves as a force transmission component, transmitting the downward pressure from the lever 34 to the columnar body 331. Crucially, the flexible contact 333 is hinged to the bottom of the columnar body 331. When the entire contact portion 33 is pressed down, the flexible contact 333 first contacts the silicon wafer surface at a certain angle, then undergoes adaptive deformation under pressure, ultimately adhering to the silicon wafer with a larger contact surface. Through the design of the flexible contact 333, a transition from rigid impact to flexible contact is achieved. The hinged and flexible characteristics of the flexible contact 333 allow it to buffer the downward pressure during initial contact, preventing hard impact damage to the brittle silicon wafer. During the pressing process, the adaptive deformation of the flexible contact 333 can evenly disperse the compressive stress, preventing localized stress concentration that could lead to silicon wafer breakage. This is particularly suitable for processing ultra-thin silicon wafers, improving the safety and yield of the bonding process.

[0027] like Figures 1 to 7 As shown, the abutting part 33 also includes a stop rod 334 and a second spring 335; the stop rod 334 is slidably disposed in the internal cavity of the columnar body 331, and its bottom is provided with a cone-shaped body; the second spring 335 is coaxially disposed with the stop rod 334 and is used to drive the stop rod 334 to reset. When the cone is configured to move upwards in contact with the silicon wafer as the abutment 334 contacts it, it compresses the flexible abutment 333 to expand outwards.

[0028] In one embodiment of the present invention, to further optimize the contact effect, a stop rod 334 is provided inside the abutment portion 33. In the initial stage of the abutment portion 33 being pressed down, the cone-shaped body at the bottom of the stop rod 334 preferentially contacts the silicon wafer. After being subjected to the reaction force of the silicon wafer, the stop rod 334 overcomes the resistance of the second spring 335 and retracts upward. During this process, the inclined surface of the cone-shaped body presses outward against the inner side of the flexible contact hand 333, forcing the flexible contact hand 333 to unfold outward around its hinge point, thereby instantly increasing the actual contact area with the silicon wafer and realizing the "dynamic self-adaptation" of the contact area. At the beginning of the pressing, the contact area is small and the pressure is strong, which is conducive to piercing or dispersing microbubbles or unevenness that may exist at the bonding interface. Subsequently, the contact area is automatically expanded immediately to achieve large-area uniform pressure, ensuring that the stress is completely eliminated and the interface is tightly bonded. A high-level process effect is achieved with a simple mechanical structure automation, improving the quality and consistency of the bonding interface. It is worth noting that after the abutment block 51 separates from the lifting part 32, the lifting part 32 quickly resets, and the abutment part 33 rises upward as a whole based on the lever principle 34. In conjunction with the second spring 335, the abutment rod 334 is driven to reset first. After the abutment rod 334 resets, the flexible contact hand resets to its initial state without any force.

[0029] like Figures 1 to 5As shown, the lifting part 32 includes a sliding rod 321, a flat plate 323, and a first spring 322; the sliding rod 321 is slidably connected to the bracket 31; the flat plate 323 is fixedly connected to the middle part of the sliding rod 321; the first spring 322 is sleeved on the sliding rod 321, and the two ends of the first spring 322 respectively abut against the bottom surface of the flat plate 323 and the bracket 31.

[0030] In one embodiment of the present invention, the lifting part 32 serves as the trigger end for the stress relief action. The slide bar 321 in the lifting part 32 slides upward under the push of the abutment block 51, compressing the first spring 322. When the abutment block 51 rotates with the movable processing platform 2 and leaves the slide bar 321, the elastic potential energy stored in the first spring 322 is released, driving the slide bar 321 and the plate 323 connected thereto to quickly and accurately return to their original position. Then, the lever 34 pulls the abutment part 33 upward, detaching it from the stacked silicon wafer. In this process, the first spring 322 not only provides the return force for the slide bar 321, ensuring that the abutment part 33 can be lifted in a timely and complete manner after each pressing action, making room for the rotation and transfer of the silicon wafer and avoiding interference; more importantly, the return action of the first spring 322 is fast and definite, ensuring the high-frequency execution and rapid return of the stress relief station action, which is the key to matching the high-speed cycle operation of the movable processing platform 2. Furthermore, the stress relief part 3 has a simple overall structure and high reliability.

[0031] like Figures 1 to 2 , Figure 7 As shown, the movable processing platform 2 is provided with a first clearance groove 21, and the processing part 4 also includes a fixing plate 41 fixed in the first clearance groove 21. The fixing plate 41 and the first clearance groove 21 together form a circular groove, and the silicon wafer carrier plate 44 can be rotatably accommodated in the circular groove.

[0032] In one embodiment of the present invention, the first clearance groove 21 opened on the movable processing platform 2 and the fixed plate 41 together form a circular groove, and the fixed plate 41 is fixed to the edge of the groove to provide support. The silicon wafer carrier plate 44 can be precisely adapted to the circular groove, so that the silicon wafer carrier plate 44 can be reliably supported on the movable processing platform 2 and rotate with it, and can also achieve non-interference, coaxial rotation within the circular groove, realizing functional decoupling and motion isolation. The fixed plate 41 undertakes the rigid connection and fixing function with the movable processing platform 2, while the silicon wafer carrier plate 44 is dedicated to the function of supporting silicon wafers and free rotation. The circular groove provides precise guidance and limit for rotation, ensuring the stability of the rotation axis and high space utilization.

[0033] like Figures 1 to 2 , Figure 7 , Figure 8As shown, the processing unit 4 also includes an arc-shaped plate 42 and a limiting part 43; the arc-shaped plate 42 is fixedly connected to the fixed plate 41; the limiting part 43 is slidably connected in the arc-shaped plate 42 and is used to limit the silicon wafer carrier plate 44 when it rotates.

[0034] In one embodiment of the present invention, in order to achieve controllable rotation of the silicon wafer carrier plate 44 during its revolution, the central gear 11, which is fixed stationary on the chassis 1, serves as a "sun gear" and is constantly meshed with the planetary gear 45 fixed below the silicon wafer carrier plate 44. When the movable processing platform 2 drives the processing unit 4 to revolve around the center of the chassis 1, the planetary gear 45 is forced to roll along the tooth ring of the central gear 11. Without the need for an additional power source and control system, the silicon wafer carrier plate 44 is deterministically driven to rotate by the single motion of the platform's revolution. The transmission ratio is fixed, and the angular relationship between the rotation and revolution is mechanically determined by the gear tooth ratio. It is absolutely synchronized and has no cumulative error, with extremely high precision and reliability, meeting the requirements of cleanroom environments for low failure rate and maintenance-free equipment.

[0035] like Figures 1 to 2 , Figure 7 , Figure 8 As shown, the limiting part 43 includes a straight rod 431, a third spring 432, a pressing plate 433, and an end 434; the straight rod 431 slides through the arc-shaped plate 42; the pressing plate 433 and the end 434 are respectively disposed at both ends of the straight rod 431; the third spring 432 is sleeved on the straight rod 431, and both ends of the third spring 432 abut against the arc-shaped plate 42 and the end 434 respectively.

[0036] In one embodiment of the present invention, to constrain the rotational motion of the silicon wafer carrier plate 44 so that it rotates only around its own axis without radial movement, a limiting part 43 is also provided in the processing part 4. The arc-shaped plate 42 provides a limiting track, and the pressing plate 433 of the limiting part 43 is always in close contact with the circular outer edge of the silicon wafer carrier plate 44 under the continuous pressure of the third spring 432. When the silicon wafer carrier plate 44 rotates, sliding friction occurs between the outer edge of the silicon wafer carrier plate 44 and the pressing plate 433, but radial movement is strictly limited. Based on the limiting part... 43 allows for free rotation and radial locking; the third spring 432 provides constant pressure to ensure the reliability of the limit, eliminates the slight radial backlash that may be caused by gear meshing clearance, and ensures the concentricity of rotation, thereby ensuring the uniformity of the correction and adhesive scraping effect. More importantly, it provides radial rigid support for the silicon wafer carrier plate 44, so that the silicon wafer carrier plate 44 does not shift or deform when subjected to the downward pressure from the abutment part 33, ensuring the effective transmission of stress relief action; among them, the end 434 facilitates assembly and observation of the spring status.

[0037] like Figures 1 to 2 , Figure 7 , Figure 8 As shown, a rotating correction plate 441 is fixedly connected to the surface edge of the silicon wafer carrier plate 44. The rotating correction plate 441 is configured to correct the vertical misalignment of the silicon wafer when the silicon wafer carrier plate 44 rotates. A telescopic rod is fixedly connected to the side of the extrusion plate 433 facing the arc plate 42. The telescopic rod is slidably engaged with the straight rod 431. When the rotating correction plate 441 rotates, the extrusion plate 433 retracts into the straight rod 431 based on the telescopic rod.

[0038] In one embodiment of the present invention, when the movable processing platform 2 revolves on the chassis 1, due to the arrangement of the planetary gear 45 and the central gear 11, the silicon wafer carrier plate 44 can rotate while revolving with the movable processing platform 2. During the rotation of the silicon wafer carrier plate 44, for example, from the loading position to the intermediate position, the silicon wafer carrier plate 44 should rotate one revolution. During this process, the rotation correction plate 441 fixed on the silicon wafer carrier plate 44 can rotate accordingly, and the rotation of the rotation correction plate 441 can correct the misaligned silicon wafer. It should be noted that when the stacked silicon wafers are released onto the silicon wafer carrier plate 44 at the loading position, until the silicon wafers are released onto the silicon wafer carrier plate 44, the silicon wafers rotate with the silicon wafer carrier plate 44. Upon reaching the stress relief station, the silicon wafer carrier plate 44 rotates twice, completing at least one full circumferential rotation to correct the misalignment of the stacked silicon wafers. This ensures that the stacked silicon wafers arriving at the stress relief station are axially aligned. Subsequent stress relief ensures improved bonding interface quality and consistency. Correspondingly, as the silicon wafer carrier plate 44 rotates from the stress relief station to the unloading station, it undergoes at least one more full circumferential rotation. During the silicon wafer's rotation (especially during the journey from the stress relief station to the unloading station), the slope structure at the end of the rotation correction plate 441 scrapes against the excess adhesive overflowing from the edge of the silicon wafer, thereby removing the excess adhesive. Furthermore, in this embodiment, since the extrusion plate 433 is pressed tightly against the edge of the stacked silicon wafer under the action of the third spring 432, when the rotating correction plate 441 rotates, in order to prevent motion interference, the extrusion plate 433 is fixed to the telescopic rod, and the telescopic rod is set to slide in the straight rod 431. At the same time, the edges of the extrusion plate 433 and the rotating correction plate 441 are set to a certain slope, so that when the extrusion plate 433 and the rotating correction plate 441 come into contact, the rotating correction plate 441 can squeeze the extrusion plate 433 and retract it in the straight rod 431 based on the cooperation of the inclined surfaces, thereby avoiding motion interference. When the rotating correction plate 441 disengages from the extrusion plate 433, the extrusion plate 433 can quickly reset and re-abut against the edge of the silicon wafer, and cooperate with the rotating correction plate 441 to ensure the offset correction of the silicon wafer and to prevent the single extrusion plate 433 from driving the silicon wafer away from the center of the silicon wafer support plate 44.

[0039] A method for forming and processing ultra-thin sensor silicon wafers includes the following steps: S1: The stacked silicon wafers to be bonded are placed on the processing section 4 of the movable processing platform 2 and supported by the silicon wafer carrier plate 44. S2: Drive the movable processing platform 2 to rotate intermittently at a fixed angle, so that the processing part 4 carrying the silicon wafer passes through each processing station; S3: When the moving processing platform 2 rotates to the unloading station, the stacked silicon wafers that have completed the correction, stress relief and adhesive scraping are removed.

[0040] Working principle: The movable processing platform 2 rotates relative to the chassis 1. The meshing of the central gear 11 and the planetary gear 45 drives the processing unit 4 on the movable processing platform 2 to rotate on its own axis as the platform revolves. This achieves functions including correcting misalignment and removing excess adhesive after stress relief. In addition, the rotation of the movable processing platform 2 causes the stop block 51 to intermittently contact and drive the stress relief unit 3, thereby eliminating the bonding stress between the stacked silicon wafers and squeezing out excess adhesive. In conjunction with the rotating processing unit 4, the excess adhesive is scraped off simultaneously. This allows the stacked silicon wafers, after passing through the stress relief station, to complete multiple processes of correcting misalignment, stress relief, and adhesive removal when they reach the unloading station. Based on the continuous feeding achieved by the movable processing platform 2 and the continuous stress relief achieved by the stress relief unit 3, the production cycle is further shortened to meet the needs of large-scale mass production. Specifically, during the bonding of stacked silicon wafers, the pre-stacked silicon wafers are transferred to the movable processing platform 2 via a robotic arm and released onto the surface of the processing unit 4. The processing unit 4 pre-fixes the stacked silicon wafers. Subsequently, the movable processing platform 2 is controlled to rotate at a fixed rhythm. Referring to this embodiment, the movable processing platform 2 rotates 90° each time. When the processing unit 4 on the movable processing platform 2 has rotated a total of 270° from the loading position to the unloading position, it rotates another 90° and then returns to the loading position. During the rotation of the movable processing platform 2, based on the meshing of the planetary gear 45 and the central gear 11, the processing unit 4 can rotate 360° relative to the movable processing platform 2. That is, when the movable processing platform 2 rotates 90°, the processing unit 4 rotates 360°. Therefore, it can be understood that when the processing unit 4 rotates from the loading position to the intermediate position (90°), or from the intermediate position to the stress relief position (90°), or from the stress relief position to the unloading position (90°), the processing unit 4 rotates a total of three revolutions. It should be noted that the purpose of the rotation of the processing unit 4 includes correcting misalignment and scraping adhesive after stress relief. That is, when the processing unit 4 rotates with the movable processing platform 2 from the loading position to the stress relief position, the processing unit 4 can rotate twice to correct misalignment. At the stress relief position, the stress relief unit 3 is driven by the abutment block 51, which causes the stress relief unit 3 to move and eliminate the bonding stress between the stacked silicon wafers and squeeze out excess adhesive. Then, when the processing unit 4 rotates with the movable processing platform 2 from the stress relief position to the unloading position, the processing unit 4 can use one rotation to scrape off the overflowing adhesive, thereby realizing the adhesive scraping function. This results in good bonding effect and overall cleanliness of the stacked silicon wafers output from the unloading position. Therefore, it can be understood that when the processing unit 4 moves from the loading position to the stress relief position (revolving 180°), the processing unit 4 rotates exactly 720°, completing the correction during this process. When it moves from the stress relief position to the unloading position (revolving 90°), the processing unit 4 rotates 360° again to complete one-cycle adhesive scraping.

[0041] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A device for forming and processing ultra-thin sensor silicon wafers, characterized in that: include: Chassis (1); The movable processing platform (2) is rotatably mounted on the chassis (1); The processing unit (4) is installed on the movable processing platform (2) and is used to carry stacked silicon wafers. The processing unit (4) includes a silicon wafer support plate (44) and a planetary gear (45) fixedly connected to the silicon wafer support plate (44). The central gear (11) is fixedly mounted on the chassis (1) and meshes with the planetary gear (45), and is configured to drive the planetary gear (45) and the silicon wafer carrier plate (44) to rotate when the movable processing platform (2) rotates; A stress relief unit (3) is disposed on one side of the chassis (1), corresponding to the stress relief station; and The trigger part (5) is fixed to the movable processing platform (2) and is provided with a plurality of abutments (51) arranged in a circumferential direction. When the active processing platform (2) rotates, the abutment (51) of the trigger part (5) can intermittently contact and drive the stress relief part (3) to apply a stress-relieving abutment force to the stacked silicon wafers that have rotated to the stress relief station.

2. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 1, characterized in that: The stress relief part (3) includes: The bracket (31) is fixed to the chassis (1); The lifting part (32) and the abutting part (33) are both vertically slidably connected to the bracket (31) and are spaced apart; and The lever (34) is rotatably connected to the bracket (31), and the two ends of the lever (34) are respectively hinged to the top end of the lifting part (32) and the top end of the abutting part (33); The abutment (51) is configured to lift the lifting portion (32) during rotation to drive the abutment portion (33) downward via the lever (34) to compress the silicon wafer.

3. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 2, characterized in that: The contact portion (33) includes: columnar body (331); The connecting rod (332) is axially fixed to the columnar body (331) and slidably connected to the bracket (31); and A flexible contact hand (333), hinged to the bottom of the column (331), is used to contact the silicon wafer.

4. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 3, characterized in that: The contact portion (33) further includes: A stop rod (334) is slidably disposed within the internal cavity of the columnar body (331), and its bottom is provided with a conical body; and The second spring (335) is coaxially arranged with the stop rod (334) and is used to drive the stop rod (334) to reset; When the cone is configured to move upwards in contact with the silicon wafer as the abutment (334) moves, it compresses the flexible abutment (333) to expand outwards.

5. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 2, characterized in that: The lifting part (32) includes: The slide rod (321) is slidably connected to the bracket (31); A flat plate (323) is fixedly connected to the middle of the slide bar (321); and The first spring (322) is sleeved on the slide rod (321), and the two ends of the first spring (322) abut against the bottom surface of the plate (323) and the bracket (31), respectively.

6. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 1, characterized in that: The active processing platform (2) is provided with a first clearance groove (21), and the processing part (4) also includes a fixing plate (41) fixed in the first clearance groove (21). The fixing plate (41) and the first clearance groove (21) together form a circular groove, and the silicon wafer carrier plate (44) can be rotatably housed in the circular groove.

7. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 6, characterized in that: The processing unit (4) also includes: The arc-shaped plate (42) is fixedly attached to the fixed plate (41); and The limiting part (43) is slidably connected in the arc plate (42) and is used to limit the silicon wafer carrier plate (44) when it rotates.

8. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 7, characterized in that: The limiting part (43) includes: A straight rod (431) slides through the arc-shaped plate (42); The extrusion plate (433) and the end cap (434) are respectively disposed at both ends of the straight rod (431); and The third spring (432) is sleeved on the straight rod (431), and the two ends of the third spring (432) abut against the arc plate (42) and the end (434) respectively.

9. The ultra-thin sensor silicon wafer forming and processing apparatus according to claim 8, characterized in that: A rotating correction plate (441) is fixed to the surface edge of the silicon wafer carrier (44), and the rotating correction plate (441) is configured to correct the vertical misalignment of the silicon wafer when the silicon wafer carrier (44) rotates. The extrusion plate (433) is fixed to a telescopic rod on the side facing the arc plate (42), and the telescopic rod is slidably engaged with the straight rod (431); when the rotating correction plate (441) rotates, the extrusion plate (433) retracts into the straight rod (431) based on the telescopic rod.

10. A method for forming and processing ultra-thin sensor silicon wafers, using the processing apparatus as described in any one of claims 1-9, characterized in that, Includes the following steps: S1: Place the stacked silicon wafers to be bonded on the processing section (4) of the movable processing platform (2), and support them with the silicon wafer carrier plate (44); S2: Drive the moving processing platform (2) to rotate intermittently at a fixed angle, so that the processing part (4) carrying the silicon wafer passes through each processing station; S3: When the moving processing platform (2) rotates to the unloading station, the stacked silicon wafers that have completed the correction, stress relief and adhesive scraping are removed.

Images