Back contact cells, cell assemblies and photovoltaic systems
By designing a dielectric layer with regionalized pore density and size differences on the back side of the back contact battery, combined with p-type and n-type doped layers and an isolation layer, the field passivation and interface passivation effects of the back contact battery are optimized, thereby improving the battery's performance and efficiency.
Patent Information
- Application Number
- CN202610653490.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-05-12
- Publication Date
- 2026-08-04
AI Technical Summary
In existing back-contact battery technology, the overall optimization of the tunneling layer has failed to differentiate the design for different functional areas, resulting in poor passivation effect and limiting the improvement of battery efficiency.
Different pore densities and sizes are designed on the back of the back contact battery. Combined with the distribution of p-type doped layer, n-type doped layer and isolation layer, the p-region and n-region are isolated by the isolation layer to optimize the field passivation and interface passivation effects.
It improves carrier collection efficiency, reduces nonradiative recombination loss of photogenerated carriers at the isolation boundary, increases the open-circuit voltage and overall photoelectric conversion efficiency of the battery, and avoids etching damage to the silicon substrate.