Processing device and processing method

Abstract

Provided is a processing device capable of smoothly performing removal or detoxification of an effluent related to semiconductor manufacturing. A PFAS detoxification system (10) is a processing device that processes a waste liquid discharged from a semiconductor manufacturing device, and includes a polymer filter (301) that sorts the waste liquid into a polymer concentrate liquid having a polymer at a prescribed concentration or more and a monomer concentrate liquid having a monomer at a prescribed concentration or more without having a polymer at a prescribed concentration or more, and a low-molecular component processing section composed of a monomer concentrator (11b), a circulation flow path (16), filters (39, 40a, 40b), a first filtrate flow path (17a), a first storage section (20xa), a second filtrate flow path (17b), a second storage section (20xb), a third filtrate flow path (18), and the like. The low-molecular component processing section performs processing that increases the concentration of PFAS as a low-molecular component on the monomer concentrate liquid sorted by the polymer filter (301).

Description

Technical Field

[0001] This disclosure relates to a processing apparatus and a processing method. Background Technology

[0002] Patent Document 1 describes a wastewater treatment device, comprising: a treatment device that reduces the content of organic fluorine compounds, etc.; an anion exchange column filled with anion exchanger containing anion exchanger; and a decomposition device that decomposes the regenerated liquid flowing to the anion exchange column.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-125352 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a treatment apparatus and method capable of smoothly removing or rendering harmless emissions related to semiconductor manufacturing.

[0008] Solution for solving the problem

[0009] One aspect of this disclosure relates to a processing apparatus for treating wastewater discharged from a semiconductor manufacturing apparatus, comprising a first filter and a low-molecular-weight component processing unit. The first filter separates the wastewater into a first solution having a predetermined concentration or higher of high-molecular-weight components and a second solution having a predetermined concentration or higher of low-molecular-weight components but not having a predetermined concentration or higher of high-molecular-weight components. The low-molecular-weight component processing unit processes the second solution separated by the first filter to increase the concentration of low-molecular-weight components.

[0010] Invention Effects

[0011] According to this disclosure, the removal or detoxification of emissions related to semiconductor manufacturing can be successfully implemented. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the processing system involved in the first embodiment.

[0013] Figure 2 yes Figure 1 The diagram shows the structure of the PFAS detoxification system.

[0014] Figure 3 This is a diagram illustrating the processing in a monomer concentrator.

[0015] Figure 4 This is a diagram illustrating a non-toxic treatment device.

[0016] Figure 5 This diagram illustrates the atomization process in a non-toxic device.

[0017] Figure 6 This is a diagram illustrating the circulating filtration mechanism involved in the modified example.

[0018] Figure 7 This is a diagram illustrating the circulating filtration mechanism involved in the modified example.

[0019] Figure 8 This is a diagram illustrating the circulating filtration mechanism involved in the modified example.

[0020] Figure 9 This is a schematic diagram of the processing system involved in the second embodiment.

[0021] Figure 10 yes Figure 9 The diagram shows the structure of a semiconductor manufacturing apparatus.

[0022] Figure 11 This is a diagram illustrating the interface block.

[0023] Figure 12 This is a diagram illustrating the setup of the pedestal.

[0024] Figure 13 This is a diagram illustrating the vacuum system module and the atmospheric system module.

[0025] Figure 14 It is a diagram illustrating the various transport routes.

[0026] Figure 15 This is a diagram illustrating the switching of the exhaust lines.

[0027] Figure 16 This is a diagram illustrating the exhaust lines involved in the modified example. Detailed Implementation

[0028] The embodiments will now be described in detail with reference to the accompanying drawings. In the description, the same reference numerals are used to denote the same elements or elements having the same function, and repeated descriptions are omitted.

[0029] [First Implementation Method]

[0030] Figure 1 This is a schematic diagram of the processing system 1 according to the first embodiment. Figure 1 As shown, the processing system 1 includes a PFAS detoxification system 10 (processing apparatus) and a semiconductor manufacturing apparatus 100 (substrate processing apparatus). In the processing system 1, the PFAS detoxification system 10 detoxifies the PFAS discharged from the semiconductor manufacturing apparatus 100. Furthermore, in... Figure 1The diagram shows a schematic of the structure of the PFAS detoxification system 10, with some structures (e.g., those related to TMAH (tetramethylammonium hydroxide) waste liquid, described later) omitted. PFAS are per- and polyfluoroalkyl substances (PFAS: Per- and Polyfluoroalkyl Substances) that are organofluorine compounds.

[0031] PFAS are compounds containing at least one aliphatic molecule of -CF2- or -CF3, and also include organic polymers such as Teflon. PFAS are found, for example, in foam fire extinguishers, plating solutions, aircraft working fluids, water repellents, and floor waxes. Additionally, PFAS are found in fibers, medical devices, electronic substrates, automotive products, food packaging paper, stone, flooring, and leather. In semiconductor manufacturing processes, non-polymer PFAS are used, for example, in photoresists. Polymer PFAS are used in liquid-wetted components such as piping, valves, and pumps in semiconductor manufacturing equipment, as well as in anti-reflective films.

[0032] PFAS are stable in nature and difficult to decompose. Therefore, PFAS are considered highly hazardous due to their high residual properties and tendency to accumulate in organisms. The PFAS detoxification system 10 of this embodiment is a system that prevents PFAS from being discharged to the outside by detoxifying the PFAS discharged from the semiconductor manufacturing apparatus 100. The PFAS detoxification system 10 functions as a treatment device for treating waste liquid discharged from the semiconductor manufacturing apparatus 100.

[0033] like Figure 1 As shown, the PFAS detoxification system 10 is configured to include a concentrator 11, a sulfuric acid treatment tank 12, a cooler 13, and a detoxification device 14. Furthermore, in this embodiment, the PFAS detoxification system 10 is described as a group of devices including multiple devices, but the PFAS detoxification system 10 may also be configured as a single device. Additionally, the semiconductor manufacturing apparatus 100 is configured to include a photolithography apparatus 111, a cleaning apparatus 112, an etching apparatus 113, and a film deposition apparatus 114. Each structure of the semiconductor manufacturing apparatus 100 discharges PFAS-containing substances during the performed processes. Furthermore, the processing units constituting the PFAS detoxification system 10 may or may not be located in the same space (location). For example, each processing unit may be located inside a building housing the photolithography apparatus 111, the cleaning apparatus 112, or the etching apparatus 113, or it may be located outside the building in an adjacent space. Alternatively, each processing unit may be separately located inside or outside the aforementioned building. In addition, unused devices in the concentrator 11, sulfuric acid treatment tank 12, cooler 13, and detoxification device 14 may not always be installed.

[0034] The photolithography apparatus 111 is configured to include a coating and developing apparatus and an exposure apparatus. The exposure apparatus performs an exposure treatment on the resist film. Specifically, energy rays are irradiated onto the exposed portion of the resist film (photosensitive coating) using methods such as immersion exposure. The coating and developing apparatus forms a resist film on the surface of the substrate before the exposure treatment performed by the exposure apparatus, and performs a development treatment on the resist film after the exposure treatment. The liquid or gas discharged from such a photolithography apparatus 111 contains PFAS. For example, PFAS are contained in resist waste liquid, alkaline waste liquid (positive developer) related to the development treatment, acidic waste liquid related to resist stripping, organic exhaust gas, thermal exhaust gas, and sublimed cured products. In addition, organic solvent waste liquid related to negative development treatment can also be considered very dilute resist waste liquid containing PFAS, and in this embodiment, it can be disposed of in the same way as the resist waste liquid described above. In this embodiment, the PFAS contained in the resist waste liquid and the PFAS contained in the positive developer solution will be mainly described. Examples of PFAS contained in the resist waste liquid include photoacid generators (PAGs), surfactants, or F-modified polymers. The resist waste liquid discharged from the photolithography apparatus 111 is introduced into the PFAS detoxication system 10.

[0035] Cleaning apparatus 112 performs cleaning treatment on the substrate. For example, cleaning apparatus 112 uses SPM (Sulfuric Acid Hydrogen Peroxide Mixture), obtained by mixing H2O2 and sulfuric acid, to remove organic matter such as photoresist. For metal removal, cleaning apparatus 112 uses a mixed aqueous solution (SC2: Standard Clean 2) obtained by mixing H2O2 and hydrochloric acid, and for particulate removal, it uses a mixed aqueous solution (SC1) obtained by mixing H2O2 and ammonia. Additionally, only hot concentrated sulfuric acid is used in wastewater treatment. Cleaning apparatus 112 discharges SPM wastewater containing PFAS. The SPM wastewater and hot concentrated sulfuric acid discharged from cleaning apparatus 112 are introduced into sulfuric acid treatment tank 12. Furthermore, cleaning apparatus 112 discharges acidic waste gas containing PFAS. The acidic waste gas discharged from cleaning apparatus 112 is introduced into detoxification unit 14.

[0036] The etching apparatus 113 performs an etching process that removes the oxide film and thin film along the pattern of the formed resist film. The etching apparatus 113 discharges exhaust gas containing PFAS. The exhaust gas discharged from the etching apparatus 113 is introduced into the detoxification device 14.

[0037] The film forming apparatus 114 forms wiring films and insulating films on a substrate. The film forming apparatus 114 uses various process gases (gases with or without PFAS) and exhausts its exhaust gases. The exhaust gases exhausted from the film forming apparatus 114 are introduced into the detoxification apparatus 14.

[0038] The concentrator 11 concentrates the PFAS-containing resist waste liquid discharged from the photolithography apparatus 111 of the semiconductor manufacturing apparatus 100. That is, the concentrator 11 concentrates the substrate processing waste liquid in the photolithography apparatus 111, which is PFAS-containing waste liquid. Furthermore, as described later, the concentrator 11 includes a polymer concentrator 11a and a monomer concentrator 11b (see [reference]). Figure 2 However, this section will not distinguish between them and will refer to them as concentrator 11. Concentrator 11 uses, for example, an ultrafiltration membrane or a reverse osmosis membrane to concentrate the resist waste liquid and separate the solvent contained in the resist waste liquid (details will be described later). The concentrated resist waste liquid contains polymers and therefore has high viscosity. The concentrated resist waste liquid is introduced into the sulfuric acid treatment tank 12. Furthermore, when alkaline waste liquid discharged from the photolithography apparatus 111 is concentrated by concentrator 11, the alkaline waste liquid can be neutralized and then introduced into the reverse osmosis membrane.

[0039] The solvent separated from the resist waste liquid can be used as a recycled solvent for applications such as cup cleaning in the semiconductor manufacturing apparatus 100, or it can be recycled by solvent recycling companies. In the past, when solvent recycling companies wanted to refine regenerated solvents from resist waste liquid and performed component analysis, waste liquid containing confidential substances from the resist manufacturer might also be recycled. Regarding this, as in this embodiment, the solid components of the resist waste liquid passing through the concentrator 11 are contained in the concentrate, thus preventing leakage of confidential information to solvent recycling companies.

[0040] Sulfuric acid treatment tank 12 uses SPM waste liquid to decompose and volatilize the concentrate from concentrator 11. That is, sulfuric acid treatment tank 12 utilizes SPM waste liquid from cleaning device 112. In the SPM waste liquid, solvents and polymers undergo oxidation and dehydration reactions, resulting in lower molecular weight (lower viscosity). At this time, the temperature of the SPM waste liquid increases due to the exothermic reaction (the temperature of the hot concentrated sulfuric acid in the SPM waste liquid increases). PFAS is essentially not decomposed, but components such as PAG volatilize due to their low boiling points from the high temperature of the SPM waste liquid (especially due to the effect of the hot concentrated sulfuric acid contained in the SPM waste liquid). Conventionally, catalase was added to SPM waste liquid to suppress foaming during waste liquid treatment. However, if the H2O2 component is exhausted through degassing by reacting with organic matter in sulfuric acid treatment tank 12, foaming does not occur in the downstream sulfuric acid waste liquid, making treatment easier. Furthermore, the amount of catalase can be reduced. The reaction generates heat, for example, around 300°C, which can be used to generate electricity by utilizing the temperature difference of the discharged heat, and by using steam generated from the circulating water used to cool the sulfuric acid treatment tank 12 for steam power generation. Furthermore, the sulfuric acid waste liquid discharged from the sulfuric acid treatment tank 12 can be recycled by a recycling company, for example. This sulfuric acid waste liquid can improve the purity of sulfuric acid compared to conventional waste liquid. In addition, to prevent accidental fires, it is desirable to operate the sulfuric acid treatment tank 12 in a nitrogen atmosphere, which is an inert gas. Alternatively, the aforementioned SPM waste liquid can also be hot concentrated sulfuric acid waste liquid. In the case of hot concentrated sulfuric acid, the solvent and polymer undergo a dehydration reaction, resulting in a low molecular weight (low viscosity). At this time, due to the exothermic reaction, the temperature of the hot concentrated sulfuric acid increases, causing PFAS, PAG, etc., to volatilize.

[0041] When a concentrated solution of the resist waste liquid is added to the SPM waste liquid accumulated in the sulfuric acid treatment tank 12 for treatment, H2O2 is gradually consumed, and the treatment capacity decreases. After supplying an appropriate amount of the concentrated solution of the resist waste liquid, the sulfuric acid treatment tank 12 is left on standby until the reaction stabilizes and gas generation ceases. Since there is a large amount of SPM waste liquid from the cleaning device 112, the SPM waste liquid from the cleaning device 112 also needs to be treated without retention. Therefore, the sulfuric acid treatment tank 12 can also be composed of multiple treatment tanks. In this case, while one treatment tank is being treated, preparations such as liquid injection can be carried out in other treatment tanks. Alternatively, the liquid can be allowed to flow downstream by observing the progress of the reaction, as in the first treatment tank, then the second treatment tank, and then the third treatment tank. Furthermore, when the resist waste liquid contains a metal resist, in the same process as described above, only the metal component does not volatilize but precipitates and is treated together with the sulfuric acid waste liquid.

[0042] SPM waste liquid contains hydrogen peroxide water, so if it is used directly as waste liquid, it may foam, increasing the burden on the equipment, or the foaming gas may deteriorate the environment. In this regard, in the structure of this embodiment, the residual hydrogen peroxide water is effectively utilized, and the foaming gas is also burned as fuel in the detoxification device 14, thus reducing the burden on the equipment and the environment.

[0043] Cooler 13 liquefies the PFAS-containing gas volatilized by the sulfuric acid treatment tank 12 for collection. Cooler 13 separates the gas into low-molecular-weight gases as gaseous components and hydrocarbon (HC) extracts as liquid components, and collects them. Figure 2 As shown, the gas from the sulfuric acid treatment tank 12 is cooled in the cooler 13, where the liquefied gas is captured as an HC (Hydrocarbon) extract, and uncondensed low-molecular-weight gases are also captured. The gas generated from the sulfuric acid treatment tank 12 is treated in a nitrogen atmosphere, thus becoming a mixture with nitrogen. Regarding the mixed gas containing a large amount of nitrogen, this increases the throughput in the downstream detoxification unit 14; therefore, for example, a sub-nanometer ceramic filter can be used to separate and concentrate the uncondensed low-molecular-weight gases in the cooler 13 into nitrogen and other components.

[0044] Various organic gases and other gases are discharged from the sulfuric acid treatment tank 12. PFAS such as PAG are also discharged as gases. Although it is also considered to directly introduce these gases into the detoxification unit 14, for gases that are liquid at room temperature, temporary liquefaction in the cooler 13 can improve transportability. Furthermore, when transporting without liquefaction, liquid accumulation sometimes occurs midway through the piping, making it difficult to control. Both the liquefied HC extract and the non-condensing low-molecular-weight gas contain PFAS. The HC extract and the low-molecular-weight gas are introduced into the detoxification unit 14. In addition, to further improve the transportability of the gas, the low-molecular-weight gas can also be completely liquefied before being introduced into the detoxification unit.

[0045] The detoxification device 14 detoxifies the substance treated by the cooler 13. The detoxification device 14 can be a combustion detoxification device that performs combustion detoxification on the substance treated by the cooler 13. The detoxification device 14 incinerates the HC extract and low-molecular-weight gases introduced from the cooler 13. The HC extract is mostly hydrocarbons, and therefore can be burned as fuel. Furthermore, the low-molecular-weight gases are mostly hydrocarbons with 10 or fewer carbon atoms, and therefore can also be burned as fuel. Conventionally, propane gas and city gas have been used as fuel in combustion detoxification devices, but as described above, HC extract and the like are used as fuel, thus reducing the use of propane gas.

[0046] Furthermore, the detoxification device 14 can also simultaneously combust and detoxify the exhaust gas introduced from the etching device 113, the exhaust gas introduced from the film forming device 114, and the acidic waste gas introduced from the cleaning device 112. These gases are exhaust gases containing PFAS that have been used in each device. By simultaneously combusting and detoxifying these gases, propane gas and the like can be further reduced. In addition, during the combusting and detoxification process, electricity can be generated by using an internal combustion engine such as a gas turbine. The gases obtained after detoxification, such as carbon dioxide, can be recovered and utilized for the synthesis of organic compounds such as formic acid and methanol. In addition, the detoxification device 14 can also be a subcritical treatment device for subcritical treatment of the material treated by the cooler 13, or a supercritical treatment device for supercritical treatment of the material treated by the cooler 13. Furthermore, the detoxified waste gas can also be treated into washing water and waste gas containing F ions by passing it through a scrubbing device (a device that washes the exhaust gas with water, neutralizes it with a chemical solution, or adsorbs it and releases it into the atmosphere). This scrubbing water can react with calcium to become calcium fluoride or fluorite. Fluorite is the starting material for fluorine compounds and can be used for resource recycling.

[0047] Next, refer to Figures 2-5 right Figure 1 The details of the PFAS non-toxic system 10 shown are explained below. Figure 2 yes Figure 1 The diagram shows the structure of the PFAS detoxification system 10. Figure 2 The diagram also shows... Figure 1 The structures shown in the diagram (structures related to TMAH waste liquid, etc.) are omitted. The PFAS detoxification system 10 also includes a waste liquid supply path 15, a polymer filter 301 (first filter), a polymer concentrator 11a, and a monomer concentrator 11b. The PFAS detoxification system 10 includes a circulation path 16. The PFAS detoxification system 10 also includes a first filtrate flow path 17a, a second filtrate flow path 17b, a third filtrate flow path 18, a fourth filtrate flow path 19, a first storage section 20xa, a second storage section 20xb, and a third storage section 20y. The PFAS detoxification system 10 also includes a bypass path 302. The PFAS detoxification system 10 also includes a first gas filter 22, a vacuum pump 23, and a distiller 24. The PFAS detoxification system 10 also includes a second gas filter 25. The PFAS non-toxic treatment system 10 also includes a waste liquid supply line 26, a concentrator 27, a circulation flow line 28, a developer flow line 29, a regenerated developer storage section 30, a developer treatment tank 31, a third gas filter 32, and a generator 33. The PFAS non-toxic treatment system 10 also includes a backflow liquid storage section 35. The PFAS non-toxic treatment system 10 also includes a discharge flow line 37. The PFAS non-toxic treatment system 10 also includes an SPM supply line 38.

[0048] The resist waste liquid containing PFAS discharged from the photolithography apparatus 111 flows in the waste liquid supply path 15 and flows into the polymer filter 301 installed in the waste liquid supply path 15. The polymer filter 301 sorts the resist waste liquid into a polymer concentrate (first solution) having a polymer (high molecular weight component) of a predetermined concentration or higher and a monomer concentrate (second solution) having a monomer (low molecular weight component) of a predetermined concentration or higher but not a polymer of the predetermined concentration or higher. The polymer concentrate may, for example, contain 20% to 60% by weight of polymer. The monomer concentrate may, for example, contain 2% to 30% by weight of monomer. The polymer filter 301 is a filter with a coarser mesh than the hollow fiber filter (filter 39, etc.) used for extracting filtrate (solvent) described later. The polymer concentrate sorted by the polymer filter 301 is stored in the sulfuric acid treatment tank 12 via the polymer concentrator 11a. In addition, the monomer concentrate sorted by the polymer filter 301 is stored in the monomer concentrator 11b. In this way, the monomer concentrator 11b is a storage unit for storing the monomer concentrate.

[0049] The circulation path 16 is a circulation path connected to the monomer concentrator 11b, and a filter 39 for removing polymers is provided midway through the path. The filter 39 is, for example, a hollow fiber filter. The monomer concentrate is concentrated by providing the filter 39. The filtrate (solvent) passing through the filter 39 flows in the first filtrate flow path 17a and is stored in the first storage section 20xa. This filtrate is a low-concentration PFAS solution. The first storage section 20xa is a storage section connected to the first filtrate flow path 17a and storing the filtrate. The second filtrate flow path 17b is a flow path connecting the first storage section 20xa and the second storage section 20xa. A filter 40a is provided in the second filtrate flow path 17b. The filter 40a is, for example, an ion exchange resin filter. By providing the filter 40a, the filtrate passing through the filter 40a can become a solution with a low PFAS content. The filtrate (solvent) passing through filter 40a flows in the second filtrate flow path 17b and is stored in the second storage section 20xb. The second storage section 20xb is a storage section connected to the third filtrate flow path 18 and storing the filtrate. The third filtrate flow path 18 is a flow path connecting the second storage section 20xb and the third storage section 20y. A filter 40b is provided in the third filtrate flow path 18. The filter 40b is, for example, an ion exchange resin filter. By providing the filter 40b, the filtrate passing through the filter 40b can become a solution that contains almost no PFAS. The filtrate passing through the filter 40b flows in the third filtrate flow path 18 and is stored in the third storage section 20y. Such filtrate can be used as a regeneration solvent and flows to the outside from the fourth filtrate flow path 19, which is downstream of the third storage section 20y.

[0050] Regarding the filtrate, it can flow in from the outlet side of the polymer filter 301 via, for example, through the third filtrate flow path 18 and the bypass flow path 302 (countercurrent). This eliminates clogging of the polymer filter 301 by polymer components, etc. Such countercurrent filtrate flow can be achieved, for example, by gas pressurization or by a pump or other delivery unit. Since the polymer solution is highly concentrated and viscous, a large amount of solvent is required for rinsing, and other methods would require UV irradiation, ozone-based oxidation, plasma treatment, etc. In this regard, by using a countercurrent filtrate method, there is no need to prepare additional solvent or perform UV irradiation, allowing for simple and appropriate cleaning of the polymer filter 301.

[0051] The monomer concentrator 11b, circulation path 16, filters 39, 40a, 40b, first filtrate flow path 17a, first storage unit 20xa, second filtrate flow path 17b, second storage unit 20xb, and third filtrate flow path 18 constitute a low molecular weight component processing unit. This unit processes the monomer concentrate separated by the polymer filter 301 to increase the concentration of PFAS and other low molecular weight components. In particular, circulation path 16 and filter 39 function as a circulating filtration mechanism to circulate the monomer concentrate and filter low molecular weight components. Furthermore, filters 40a, 40b, first filtrate flow path 17a, first storage unit 20xa, second filtrate flow path 17b, second storage unit 20xb, and third filtrate flow path 18 function as a purification mechanism to remove PFAS from the filtrate after passing through the circulating filtration mechanism.

[0052] Furthermore, structures downstream of the waste liquid supply path 15, such as the polymer filter 301 and the aforementioned low molecular weight component treatment unit, can be configured to be differentiated according to each type of solvent contained in the waste liquid.

[0053] Figure 3 This is a diagram illustrating the process in monomer concentrator 11b. (See diagram for example.) Figure 3 As shown, the PFAS non-toxic system 10 also includes a PFAS foam liquid collection chamber 311 (PFAS collection section). The PFAS foam liquid collection chamber 311 is a structure that collects the PFAS foam liquid that is collected in the monomer concentrator 11b. The inlet of the PFAS foam liquid collection chamber 311 is located downstream of the flow of the monomer concentrate along the liquid surface of the monomer concentrator 11b.

[0054] In monomer concentrator 11b, microbubbles are generated using air or nitrogen in the monomer concentrate after polymer removal. Due to the microbubbles, PFAS aggregates at the interface, allowing high-concentration PFAS foam solution to be recovered by scooping up the supernatant. Figure 3As shown, a merging section 15x for combining air or nitrogen is provided midway through the waste liquid supply path 15, allowing air or nitrogen to flow into the monomer concentrator 11b along with the monomer concentrate. In the circulation path 16, an inflow path 16a for allowing the monomer concentrate to flow into the filter 39 recovers the monomer concentrate from near the bottom surface (a deeper portion away from the liquid surface) of the monomer concentrator 11b. Additionally, in the circulation path 16, an outlet path 16b for returning the monomer concentrate from the filter 39 to the monomer concentrator 11b returns the monomer concentrate to near the liquid surface of the monomer concentrator 11b. A merging section 16x for combining air or nitrogen is provided midway through the outlet path 16b. By introducing air or nitrogen into the vicinity of the liquid surface in both the waste liquid supply path 15 and the outlet path 16b, microbubbles can be generated near the liquid surface, causing the concentrated PFAS to accumulate at the interface. Waste liquid supply path 15 and discharge path 16b function as a microbubble generating section for generating microbubbles in the monomer concentrate of monomer concentrator 11b. Furthermore, by positioning the inlet of PFAS foam liquid collection chamber 311 downstream of the flow of monomer concentrate along the liquid surface of monomer concentrator 11b, high-concentration PFAS foam liquid can be recovered by scooping up the supernatant from the interface through PFAS foam liquid collection chamber 311.

[0055] Near the bottom of monomer concentrator 11b, the PFAS concentration decreases, thus reducing the PFAS concentration in the monomer concentrate that flows into filter 39 via flow path 16a. This improves the solvent recovery and reuse rate.

[0056] The PFAS foam liquid can be discharged via flow path 312 into the sulfuric acid treatment tank 12 where SPM is stored and burned, or it can be heated to evaporate and incinerated before being discharged into the sulfuric acid treatment tank 12. Alternatively, the PFAS foam liquid can be treated together with the solidified PFAS components. Furthermore, if PFAS remains unvaporized in the sulfuric acid treatment tank 12, it may become a source of pollution when residual sulfuric acid is disposed of. Therefore, the PFAS foam liquid can also be directly discharged into the detoxification unit 14 (details described later). Additionally, the flow path of the PFAS foam liquid can be switched periodically, or the PFAS foam liquid can be discharged into the sulfuric acid treatment tank 12 according to the amount of SPM and polymer concentrate in the tank.

[0057] return Figure 2The polymer concentrate flows into the sulfuric acid treatment tank 12 via the polymer concentrator 11a. In the sulfuric acid treatment tank 12, the polymer concentrate is decomposed and volatilized by the SPM waste liquid. This results in oxidation and dehydration reactions, decomposing the concentrate into gases containing carbon monoxide, carbon dioxide, nitrogen, water vapor, hydrocarbon gases, and PFAS. The released gases are at temperatures above 100°C. Furthermore, the gases volatilized in the sulfuric acid treatment tank 12 are separated by a first gas filter 22. The first gas filter 22 separates the gases volatilized through the sulfuric acid treatment tank 12 into PFAS-rich gases and PFAS-removed gases. The first gas filter 22 can be, for example, a pervaporation filter or a ceramic filter. The first gas filter 22 receives the heat generated in the sulfuric acid treatment tank 12 and is therefore at a higher temperature than the concentrate before decomposition. The first gas filter 22 can receive the heat generated in the sulfuric acid treatment tank 12 by being disposed in the same space as the sulfuric acid treatment tank 12 or by being connected to the sulfuric acid treatment tank 12 via a conductive component such as metal. Furthermore, in this embodiment, the PFAS-rich gas refers to a gas in which the PFAS concentration is higher than the PFAS concentration of the gas before the prescribed action. Here, the separation performed by the first gas filter 22 is a prescribed action. However, in this embodiment, the prescribed action is not limited to the separation performed by the first gas filter 22; the action that causes the generation of PFAS-rich gas can be considered a prescribed action.

[0058] The first gas filter 22, which is a pervaporation filter, separates gases based on the difference in momentum caused by differences in molecular weight. Specifically, the first gas filter 22 allows gases with smaller molecular weights (nitrogen, carbon monoxide, carbon dioxide, water vapor, etc.) to pass through (flow downstream) while preventing gases with larger molecular weights (PFAS, hydrocarbons) from passing through, for example, by reducing pressure on the downstream side. This allows for the approximate separation of PFAS-rich gases and gases from which PFAS have been removed.

[0059] Vacuum pump 23 is a pump that reduces pressure downstream of the first gas filter 22 to achieve the gas separation described above by the first gas filter 22. Cooler 13 liquefies and collects the gas containing PFAS. The collected liquid and gas are stored in distiller 24. Liquid PFAS and hydrocarbons, as well as gaseous PFAS and hydrocarbons (and ozone, described later), are introduced from distiller 24 into detoxification device 14.

[0060] In the PFAS detoxification system 10, external gas (air) is introduced and separated into nitrogen and oxygen by a second gas filter 25. Specifically, the second gas filter 25 separates the external gas into a gas with a nitrogen concentration higher than that in air (hereinafter referred to as nitrogen) and a gas with an oxygen concentration higher than that in air (hereinafter referred to as oxygen). Furthermore, the second gas filter 25 supplies nitrogen to the sulfuric acid treatment tank 12. This suppresses ignition in the sulfuric acid treatment tank 12. Additionally, the second gas filter 25 supplies oxygen to the detoxification device 14. This promotes combustion in the detoxification device 14. Furthermore, ozone generated from oxygen as described above can also be supplied to the detoxification device 14. This ozone can be supplied to the distiller 24 and then introduced into the detoxification device 14, or it can be directly introduced into the detoxification device 14. Methods for generating ozone from oxygen include, for example, UV irradiation or electrical discharge.

[0061] In the PFAS non-toxic system 10, for example, TMAH waste liquid, which is a positive developer, is introduced from the lithography apparatus 111. Furthermore, in the PFAS non-toxic system 10, the TMAH waste liquid discharged from the lithography apparatus 111 of the semiconductor manufacturing apparatus 100 is concentrated in the concentrator 27. Additionally, the first concentrated solution obtained by the concentrator 27, which is a positive developer, is decomposed and evaporated in the developer treatment tank 31.

[0062] Waste liquid supply path 26 supplies TMAH waste liquid introduced from the photolithography apparatus 111 to the concentrator 27. Waste liquid supply path 26 and waste liquid supply path 15, which supplies resist waste liquid to the concentrator 11, are separated from each other. A filter 41 for removing polymer is provided in waste liquid supply path 26. In this way, filter 41 is a filter for removing polymer from TMAH waste liquid. Circulation path 28 is a circulation path connected to the concentrator 27, and a filter 42 for concentrating PFAS is provided in the middle of the path. The developer (PFAS-depleted developer) that has passed through filter 42 is stored in the regenerated developer storage section 30 through developer flow path 29. Such developer can be used as regenerated developer. In this way, filter 42 is a positive development waste liquid treatment section that separates TMAH waste liquid into PFAS-concentrated developer and PFAS-depleted developer. PFAS-depleted developer can also flow back from the secondary side of filter 41. The counterflow liquid storage section 35 is a developer filter cleaning liquid chamber that stores the liquid that flows back through the filter 41 in this way.

[0063] The concentrated solution, after being concentrated in the concentrator 27, is supplied to the developer treatment tank 31 via the concentrate flow path 45. The developer treatment tank 31 is grounded and connected to the sulfuric acid treatment tank 12. Specifically, the developer treatment tank 31 is arranged to surround the sulfuric acid treatment tank 12 from the lower side. As a result, the developer treatment tank 31 receives heat from the sulfuric acid treatment tank 12, which can decompose and volatilize the first concentrate. Furthermore, the method of decomposing the first concentrate is not limited to heat; for example, it can also be decomposed by exposure to microorganisms. In addition, the first concentrate can also be used as a cooling solvent for SPM within the sulfuric acid treatment tank 12.

[0064] TMAH, which is decomposed by heating (e.g., at around 140°C) in the developer treatment tank 31, is broken down into trimethylamine and dimethyl ether. These gases can be used as fuel in the detoxification device 14. PFAS does not decompose even when heated, but is released as a gas and burned in the detoxification device 14. The gas released from the developer treatment tank 31 contains nitrogen, water vapor, hydrocarbons, trimethylamine, dimethyl ether, PFAS, etc. The third gas filter 32, for example, allows gases with smaller molecular weights (nitrogen, water vapor, etc.) to pass through (flow downstream) while preventing gases with larger molecular weights (trimethylamine, dimethyl ether, PFAS, hydrocarbons) from passing through by depressurizing the downstream side. Thus, gases rich in PFAS and gases in which PFAS have been removed can be substantially separated. Nitrogen and water vapor are released outside the system. Furthermore, by restoring the released water vapor to water in the generator 33, power can be generated using the pressure difference. Gases containing PFAS and the like, which are supplied to the detoxification device 14, can also be supplied to the detoxification device 14 after compression.

[0065] The detoxification device 14 may have a combustion chamber for mixing and burning the gases volatilized through the developer treatment tank 31 and the gases volatilized through the sulfuric acid treatment tank 12. As described above, the PFAS foam liquid can also be atomized and introduced into the detoxification device 14 (see reference). Figure 4 and Figure 5 In this case, such as Figure 4 and Figure 5 As shown, the PFAS foam liquid is introduced into the detoxification device 14 along with an oxygen-free gas. The oxygen-free gas here may include various gases generated in the PFAS detoxification system 10.

[0066] like Figure 5As shown, specifically, the PFAS foam liquid and oxygen-free gas are atomized and introduced into the combustion chamber 14a of the detoxification device 14. By atomizing the PFAS foam liquid, it can be burned in one go. The organic gas is burned to CO2 or H2O. The C-F bonds in the PFAS gas break, C is discharged as CO2, and F is discharged as F ions (fluoride ions). Moreover, in the washing chamber 14b of the detoxification device 14, the F ions dissolve in water and are recovered as HF (hydrofluoric acid). Then, it is disposed of after neutralization treatment, for example, using sodium hydroxide.

[0067] As the reaction between the resist concentrate and SPM waste liquid progresses in the sulfuric acid treatment tank 12, the hydrogen peroxide in the SPM becomes deactivated, significantly reducing its reactivity. At this point, the SPM becomes concentrated sulfuric acid. Although a dehydration reaction can occur, the carbonization of organic matter causes the liquid to turn yellow or brown. Therefore, for example, at the point when the liquid turns yellow, the SPM waste liquid is discharged through the discharge path 37. At this time, the carbonized matter is filtered through the filter 43 installed in the discharge path 37. Regarding the discharged SPM waste liquid, the hydrogen peroxide disappears, and the purity of the sulfuric acid is increased by filtration through the filter 43, thus enabling it to be used as regenerated sulfuric acid.

[0068] When new SPM waste liquid is supplied to the sulfuric acid treatment tank 12, the filter 43, which captures carbides, can be cleaned by allowing a portion of the SPM waste liquid to flow in from the outlet side of the filter 43. That is, the SPM waste liquid can also be circulated through the flow path of the SPM supply path 38, which is connected to the outlet of the filter 43, to allow the SPM waste liquid to react with the carbides captured by the filter 43. As a result, the carbides captured by the filter 43 are converted into carbon dioxide and discharged, thus cleaning the filter 43.

[0069] Next, the effects of the PFAS non-toxic system 10 involved in this embodiment will be explained.

[0070] The PFAS detoxification system 10 according to this embodiment is a treatment device for treating waste liquid discharged from a semiconductor manufacturing apparatus 100, and includes a polymer filter 301 and a low-molecular-weight component treatment unit. The polymer filter 301 is a filter that separates the resist waste liquid into a polymer concentrate containing polymers of a predetermined concentration or higher and a monomer concentrate containing monomers of a predetermined concentration or higher but not polymers of a predetermined concentration or higher. The low-molecular-weight component treatment unit consists of a monomer concentrator 11b, a circulation path 16, filters 39, 40a, 40b, a first filtrate flow path 17a, a first storage unit 20xa, a second filtrate flow path 17b, a second storage unit 20xb, and a third filtrate flow path 18. The low-molecular-weight component treatment unit increases the concentration of PFAS, a low-molecular-weight component, in the monomer concentrate separated by the polymer filter 301.

[0071] In this way, after the polymer and monomer are first separated by the polymer filter 301, the monomer concentrate and the like are treated to increase the concentration of PFAS (i.e., a process for removing PFAS). This allows for smoother processing of components intended for removal and detoxification. As described above, the PFAS detoxification system 10 according to this embodiment enables the smooth removal or detoxification of emissions related to semiconductor manufacturing.

[0072] The low-molecular-weight component processing unit may include: a circulating filtration mechanism that circulates the monomer concentrate to filter low-molecular-weight components; and a purification mechanism that removes PFAS from the filtrate after passing through the circulating filtration mechanism. With this configuration, PFAS can be removed efficiently, facilitating the removal or decontamination of semiconductor manufacturing-related emissions.

[0073] The polymer filter 301 and the low-molecular-weight component treatment unit described above can be installed separately for each type of solvent contained in the waste liquid. This allows for the appropriate removal of PFAS from each solvent, etc.

[0074] The PFAS detoxification system 10 may also include: a filter 42 that separates TMAH waste liquid into PFAS concentration developer and PFAS removal developer; and a filter 41 that removes polymers from the TMAH waste liquid. Additionally, the PFAS detoxification system 10 may include a backflow liquid storage unit 35 that stores the liquid from which the PFAS removal developer flows back through the filter 41 from the secondary side. With this structure, PFAS can be appropriately removed from the TMAH waste liquid, and the backflow liquid can be used to properly clean the filter 41.

[0075] The molecular component processing unit may also include: a monomer concentrator 11b for storing monomer concentrate; and a PFAS foam collection chamber 311, the inlet of which is located downstream of the flow of monomer concentrate along the liquid surface of the monomer concentrator 11b. With this configuration, PFAS accumulated along the flow of monomer concentrate can be appropriately recovered.

[0076] The low-molecular-weight component processing unit may also include a microbubble generating unit that generates microbubbles in the monomer concentrate of the monomer concentrator 11b. With this structure, microbubbles can be generated to aggregate the concentrated PFAS at the interface, and the PFAS can be appropriately recovered by the aforementioned PFAS foam collection chamber 311.

[0077] The present embodiment has been described above, but this disclosure is not limited to the above. For example, a filter 39 provided in the circulation flow path 16 has been described as a circulating filtration mechanism, but it is not limited thereto. The circulating filtration mechanism may also have multiple (four in one example) filters 39a, 39b, 39c, 39d (second filters), and a flow sequence switching mechanism for sequentially switching the monomer concentrate in series among the multiple filters 39a, 39b, 39c, 39d.

[0078] Figures 6-8 This is a diagram illustrating the circulating filter mechanism involved in the modified example. For example... Figure 6 As shown, multiple filters 39a, 39b, 39c, and 39d, which are connected in series in the circulation flow path 16, which serves as the flow path connected to the monomer concentrator 11b, are arranged in series. Here, assuming that the monomer concentrate always flows in the order of filters 39a, 39b, 39c, and 39d, filter 39a will be the most contaminated. The aforementioned sequential switching mechanism is used as a means to even out the contamination of such filters.

[0079] exist Figure 7 In the diagram, filter 39a is designated "A", filter 39b is designated "B", filter 39c is designated "C", and filter 39d is designated "D". The flow paths and valves between the filters are also schematically shown. Here, an example is given of switching the flow order of the monomer concentrate in each filter by controlling the opening and closing of the valves. Therefore, each valve corresponds to the flow order switching mechanism described above. Furthermore, while four filters are shown in series in the diagram, this is not a limitation; two or more filters may also be shown in series.

[0080] exist Figure 7In the example shown in (a), the control valves are configured to allow the monomer concentrate to flow in the order "A→B→C→D". Specifically, valve 601, the flow path leading to "A", is opened, allowing the monomer concentrate flowing in circulation path 16 to flow in the "A" direction. Furthermore, valves 602 (flow path leading to "B"), 603 (flow path leading to "C"), and 604 (flow path leading to "D") are all closed, preventing the monomer concentrate initially from flowing in circulation path 16 towards "B", "C", or "D". Next, valve 605, the flow path between "A" and "B", is opened, allowing the monomer concentrate to flow from "A" to "B". Additionally, valves 606, the flow paths between "A" and "C" and between "A" and "D", are closed. Next, valve 607 of the flow path between "B" and "C" is set to the open state, allowing the monomer concentrate to flow from "B" to "C". Meanwhile, valve 608 of the flow path between "B" and "D" is set to the closed state. Next, valve 609 of the flow path between "C" and "D", and valve 610 of the flow path between "D" and the filtrate storage section are set to the open state, allowing the monomer concentrate to flow from "C" to "D", and then from "D" to the filtrate storage section.

[0081] In addition, Figure 7 In the example shown in (b), the control valves are configured to allow the monomer concentrate to flow in the order "B→C→D→A". Specifically, valve 602 is opened, allowing the monomer concentrate flowing in circulation path 16 to flow in the "B" direction. Furthermore, valves 601 in the "A" direction, 603 in the "C" direction, and 604 in the "D" direction are all closed, preventing the monomer concentrate initially from flowing in the "A", "C", and "D" directions in circulation path 16. Next, valve 607 in the flow path between "B" and "C" is opened, allowing the monomer concentrate to flow from "B" to "C". Additionally, valves 605 in the flow path between "B" and "A" and 608 in the flow path between "B" and "D" are closed. Next, valve 609 of the flow path between "C" and "D" is set to the open state, so that the monomer concentrate flows from "C" to "D". Next, valve 611 of the flow path between "D" and "A" and valve 606 of the flow path between "A" and the filtrate storage section are set to the open state, so that the monomer concentrate flows from "D" to "A", and then the monomer concentrate flows from "A" to the filtrate storage section.

[0082] Alternatively, before replacing the filter, one can remove blockages (impurities) from the filter by backflowing the filtrate (diluent). In this case, the cleaning of one of several filters can be intensified. Such filter cleaning can also be performed sequentially after a certain amount of treatment. Figure 7 In the example shown in (c), for the purpose of cleaning "A" (filter 39a), only valve 606 of the flow path between the filtrate storage section and "A" is set to the open state, so that the filtrate flows towards "A". In addition, valve 601 is set to the closed state, so that the filtrate flows from "A" to the drain path 650.

[0083] Alternatively, a three-way valve can be used to switch the flow sequence instead of the valve mentioned above. Figure 8 In the diagram, filter 39a is designated "A", filter 39b is designated "B", filter 39c is designated "C", and filter 39d is designated "D". The flow paths between the filters and the three-way valves are also schematically shown. Here, an example of switching the series flow order of the monomer concentrate in each filter by controlling the three-way valves is explained. Therefore, each three-way valve corresponds to the aforementioned flow order switching mechanism.

[0084] exist Figure 8 In the example shown in (a), the three-way valves are controlled so that the monomer concentrate flows in the order of "A→B→C→D". That is, the three-way valve 701 of the flow path to "A" is controlled so that the monomer concentrate flowing in the circulation flow path 16 flows in the "A" direction. In addition, the three-way valves 702 of the flow path to "B", 703 of the flow path to "C", and 704 of the flow path to "D" are controlled so that the monomer concentrate flowing in the circulation flow path 16 does not initially flow in the "B", "C", and "D" directions. Next, the three-way valve 702 of the flow path between "A" and "B" is controlled so that the monomer concentrate flows from "A" to "B". In addition, the valves 706 of the flow paths between "A" and "C" and between "A" and "D" are set to the closed state so that the concentrate does not flow in the "C" and "D" directions. Next, the three-way valve 703 of the flow path between "B" and "C" is controlled to allow the monomer concentrate to flow from "B" to "C". Additionally, the valve 708 of the flow path between "B" and "D" is closed. Next, the three-way valve 704 of the flow path between "C" and "D" is controlled, and the valve 710 of the flow path between "D" and the filtrate storage section is opened, allowing the monomer concentrate to flow from "C" to "D", and then from "D" to the filtrate storage section.

[0085] In addition, Figure 8In the example shown in (b), the control valves are configured to allow the monomer concentrate to flow in the order "B→C→D→A". Specifically, the three-way valve 702, flowing towards "B", is controlled to allow the monomer concentrate flowing in the circulation path 16 to flow towards "B". Furthermore, the three-way valves 701 (flowing towards "A"), 703 (flowing towards "C"), and 704 (flowing towards "D") are controlled to prevent the monomer concentrate initially flowing in the circulation path 16 from flowing towards "A", "C", or "D". Next, the three-way valve 703, flowing between "B" and "C", is controlled to allow the monomer concentrate to flow from "B" to "C". Additionally, the valve 708, flowing between "B" and "D", is closed. Then, the three-way valve 704, flowing between "C" and "D", is controlled to allow the monomer concentrate to flow from "C" to "D". Next, the three-way valve 701 controlling the flow path between "D" and "A" is set to the open state, and the valve 706 of the flow path between "A" and the filtrate storage section is set to the open state, so that the monomer concentrate flows from "D" to "A", and then the monomer concentrate flows from "A" to the filtrate storage section.

[0086] Alternatively, before replacing the filter, one can remove blockages (impurities) from the filter by backflowing the filtrate (diluent). In this case, the cleaning of one of several filters can be intensified. Such filter cleaning can also be performed sequentially after a certain amount of treatment. Figure 8 In the example shown in (c), for the purpose of cleaning "A" (filter 39a), only the valve 706 of the flow path between the filtrate storage section and "A" is set to the open state, so that the filtrate flows towards "A". In addition, the three-way valve 701 is controlled so that the filtrate flows from "A" to the drain path 750.

[0087] As described above, the circulating filtration mechanism has multiple filters, and by switching the order in which the monomer concentrate passes through each filter, it is possible to avoid contamination of only a portion of the filters.

[0088] [Second Implementation]

[0089] Next, the second embodiment of this disclosure will be described. In the description of the second embodiment, the descriptions that are repeated in the first embodiment will be omitted, and the differences from the first embodiment will be mainly described.

[0090] In the first embodiment described above, the PFAS detoxification system 10 in the processing system 1 was mainly described. In this embodiment, an example of the structure of the semiconductor manufacturing apparatus 100 (substrate processing apparatus) included in the processing system 1 will be described in detail. Furthermore, the semiconductor manufacturing apparatus 100 described below may not necessarily be a structure used in conjunction with the PFAS detoxification system 10.

[0091] Figure 9 This is a schematic diagram of the processing system 1 according to the second embodiment. The processing system 1 includes a semiconductor manufacturing apparatus 100. As described above, waste liquid and exhaust gas discharged from the semiconductor manufacturing apparatus 100 are treated in the PFAS detoxification system 10. In addition, the semiconductor manufacturing apparatus 100 operates by receiving power and the like from the power generation and storage device 3 and the module power supply device 2.

[0092] The semiconductor manufacturing apparatus 100 is a system for forming a photosensitive coating on a substrate, exposing the photosensitive coating, and developing the photosensitive coating. The substrate being processed is a semiconductor wafer. The semiconductor manufacturing apparatus 100 is configured to be large enough to fit into a cleanroom, and if the cleanroom has sufficient height, its height can be utilized to the maximum extent, for example, by configuring it as a two-story high structure.

[0093] like Figure 9 and Figure 10 As shown, the semiconductor manufacturing apparatus 100 includes a processing block 800, an exposure apparatus 801, an interface block 802 (relay block), and a carrier block 803 (load-in / load-out block). In the semiconductor manufacturing apparatus 100, for example, the exposure apparatus 801 is provided at one end, and the interface block 802, the processing block 800, and the carrier block 803 are sequentially arranged from the side closest to the exposure apparatus 801.

[0094] Exposure apparatus 801 performs exposure processing on the resist film (photosensitive coating) coated on the wafer. Specifically, exposure apparatus 801 irradiates the exposed portion of the resist film with energy rays using methods such as EUV or immersion exposure. Alternatively, other semiconductor manufacturing apparatuses besides the exposure apparatus can be connected instead of exposure apparatus 801. These other semiconductor manufacturing apparatuses may be apparatuses that perform film deposition, cleaning, or other processes, and the processing method can be either a single-substrate processing method or a batch processing method that processes multiple substrates.

[0095] The carrier block 803 performs the loading and unloading of wafers into and out of the processing block 800. The carrier block 803 is capable of supporting a carrier that houses multiple wafers, and the wafer loading and unloading are performed by loading and unloading this carrier. The carrier block 803 is provided with multiple carrier placement stages (not shown) and wafer transport devices (not shown).

[0096] Interface block 802 is connected to processing block 800 and performs wafer transfer between it and exposure device 801. Figure 11 This is a diagram illustrating interface block 802. Figure 11(a) shows a top view of interface block 802. Figure 11 (b) shows the front view of interface block 802. Figure 11 (c) shows a side view of interface block 802. Figure 11 As shown in (c), interface block 802 incorporates conveying devices 802x and 802y, including transfer arms, and is connected to exposure device 801. Additionally, interface block 802 has loading interlocking units 802a and 802b that function as vacuum environment switching chambers. Loading interlocking units 802a and 802b are configured to be removable to enable wafer transfer in a vacuum environment. Furthermore, interface block 802 is connected to atmospheric system processing conveying path 821, vacuum system processing conveying path 822, and bypass conveying path 823, described later.

[0097] return Figure 10 The processing block 800 includes an atmospheric system module 850 (atmospheric system processing group), a vacuum system module 860 (vacuum system processing group), and a transport path 804. The following, except for reference... Figure 10 In addition, refer to Figures 12-15 This section will provide details on processing block 800.

[0098] Atmospheric system module 850 is an atmospheric system processing group that includes multiple atmospheric system processing devices. Vacuum system module 860 is a vacuum system processing group that includes multiple vacuum system processing devices and is located directly above atmospheric system module 850. Vacuum system module 860 is located directly above atmospheric system module 850 via mounting bases 811 and 812.

[0099] The pedestals 811 and 812 are configured to cover and support the vacuum system module 860. For example... Figure 12 As shown, the mounting base 811 has a pair of legs 811a, 811a and a support portion 811b mounted between the legs 811a, 811a. The mounting base 812 has a pair of legs 812a, 812a and a support portion 812b mounted between the legs 812a, 812a. The mounting bases 811 and 812 can, for example, have identical structures. The mounting base 811 can, for example, cover half of the atmospheric system processing device on the side near the support block 803 in the atmospheric system module 850. Similarly, the mounting base 812 can, for example, cover half of the atmospheric system processing device on the side near the interface block 802 in the atmospheric system module 850. Furthermore, the mounting bases 811 and 812 only need to support the vacuum system module 860, and do not necessarily need to cover the entire upper surface area of ​​the atmospheric system module 850.

[0100] Figure 13(a) is a top view of the vacuum system module 860. Figure 13 (b) is a schematic diagram of the Atmospheric System Module 850 viewed from above. Figure 13 In the example shown in (a), the vacuum system module 860 includes multiple etching devices 113 and multiple film-forming devices 114. By lowering the height of these etching devices 113 and film-forming devices 114, the structures of the atmospheric system module 850 (described later) can be arranged in the gap below. Furthermore, the vacuum system module 860 may also include a resist film-forming device and a developing device for a gas system.

[0101] In addition, Figure 13 In the example shown in (b), the atmospheric system module 850 includes multiple coating devices 851, multiple developing devices 852, multiple heat treatment devices 853, and multiple cleaning devices 112. Furthermore, the types and number of devices included in any module are not limited thereto.

[0102] Each of the aforementioned modules can be inserted and removed like a drawer in a cabinet for maintenance and replacement. The power required by each module can be supplied via, for example, an automatic coupler. This allows for the safe assembly and disassembly of each module.

[0103] Figure 14 This is a diagram illustrating each transport path 804. The semiconductor manufacturing apparatus 100 includes an atmospheric system handling transport path 821, a vacuum system handling transport path 822, and a bypass transport path 823 as transport paths 804.

[0104] The atmospheric system processing transport path 821 is a transport path for transferring wafers to the aforementioned structures of the atmospheric system module 850. The atmospheric system processing transport path 821 extends between the carrier block 803 and the interface block 802 to connect with both the carrier block 803 and the interface block 802.

[0105] The vacuum system processing transport path 822 is a transport path for transferring wafers to the aforementioned structures of the vacuum system module 860. The vacuum system processing transport path 822 extends between the carrier block 803 and the interface block 802 to connect with both. The vacuum system processing transport path 822 extends at a height corresponding to the vacuum system module 860 above the atmospheric system module 850, and extends above the atmospheric system processing transport path 821.

[0106] The bypass transport path 823 is a transport path that connects the wafer between the carrier block 803 and the interface block 802, above the transport path 822 for vacuum system processing. By using the bypass transport path 823, the wafer can be transported more quickly (directly).

[0107] Next, an example of maintenance of the exhaust line utilizing the features unique to the modular structure of the above-described atmospheric system module 850 and vacuum system module 860 will be described. Figure 15 (a) and (b) are diagrams illustrating the switching of the exhaust line.

[0108] like Figure 15 As shown in (a), for example, in the film-forming apparatus 114 of the vacuum system module 860, chamber 114a is connected to a pressure-reducing exhaust line 842 via a turbomolecular pump 114b. The pressure-reducing exhaust line 842 is the pressure-reducing exhaust line of the film-forming apparatus 114, which is a vacuum system processing device. Alternatively, for example, an atmospheric exhaust line 841 extends from one of the multiple heat treatment devices 853 of the atmospheric system module 850. The pressure-reducing exhaust line 842 and the atmospheric exhaust line 841 are now arranged close to each other and parallel to each other.

[0109] In this case, for example, let's say, as Figure 15 As shown in (b), a portion of the exhaust line 841a extending from the heat treatment apparatus 853 can be switched to merge with the pressure-reducing exhaust line 842. In this case, the vacuum flowing in the pressure-reducing exhaust line 842 can be used to exhaust the sublimation accumulated in the piping of the heat treatment apparatus 853, and the sublimation can be appropriately released. Such exhaust switching can be performed when semiconductors are not being manufactured or during maintenance. In this configuration, the exhaust line 841a is a pressure-reducing exhaust switching section that can reduce the internal pressure of the atmospheric system handling apparatus.

[0110] Furthermore, pressure-reducing exhaust lines and atmospheric exhaust lines are sometimes heated to prevent blockage by deposits. In this case, the total energy can be reduced by heating them simultaneously rather than heating them separately. That is, by simultaneously heating the aforementioned pressure-reducing exhaust line 842 and atmospheric exhaust line 841, the total energy can be reduced. Moreover, the heat supply method in this case can be, for example, the exhaust heat energy from the detoxification device 14, the heat energy from the cleaning device 112, or the energy generated within the device (electricity).

[0111] Next, the effects of the semiconductor manufacturing apparatus 100 according to this embodiment will be explained.

[0112] The semiconductor manufacturing apparatus 100 includes: a carrier block 803 for loading and unloading carriers; an atmospheric system module 850 including multiple atmospheric system processing devices; and a vacuum system module 860 including multiple vacuum system processing devices, the vacuum system module 860 being located directly above the atmospheric system module 850. The semiconductor manufacturing apparatus 100 also includes: an atmospheric system processing transport path 821 for transferring wafers to the atmospheric system processing devices; and a vacuum system processing transport path 822 for transferring wafers to the vacuum system processing devices. Furthermore, the atmospheric system processing transport path 821 and the vacuum system processing transport path 822 are connected to the carrier block 803.

[0113] In the semiconductor manufacturing apparatus 100 according to this embodiment, the atmospheric system module 850 and the vacuum system module 860 are positioned vertically, thus enabling the consolidation of the layout of the discharge line and the power supply line. Furthermore, the dedicated transport paths provided in the vertically positioned structure of the two modules further suppress the reduction of transport efficiency. With the semiconductor manufacturing apparatus 100 described above, efficiency related to substrate processing can be improved. Moreover, by positioning the vacuum system module 860 vertically, the vacuum system processing apparatus can be maintained from multiple perspectives.

[0114] The semiconductor manufacturing apparatus 100 may also include mounting bases 811 and 812, which are configured to cover the atmospheric system module 850 and support the vacuum system module 860. With this structure, it is easy and appropriate to achieve a configuration where the two modules are positioned vertically. Furthermore, by having mounting bases 811 and 812, the load applied to the atmospheric system module 850 is suppressed.

[0115] The semiconductor manufacturing apparatus 100 may also include an interface block 802 and a bypass transport path 823 above the vacuum system module 860 for transferring wafers between the carrier block 803 and the interface block 802. With this structure, the bypass transport path 823 can be used to transport wafers more quickly, which can further improve the efficiency related to substrate processing.

[0116] The semiconductor manufacturing apparatus 100 may also include a pressure reduction and exhaust switching unit, which is connected to the pressure reduction exhaust line 842 of the vacuum system processing apparatus and the atmospheric exhaust line 841 of the atmospheric system processing apparatus. This pressure reduction and exhaust switching unit can reduce the pressure inside the atmospheric system processing apparatus via the atmospheric exhaust line 841. With this structure, the vacuum flowing in the pressure reduction exhaust line 842 can be used to exhaust sublimates accumulated in the atmospheric exhaust line 841, allowing for appropriate release of the sublimates.

[0117] The above description of this embodiment is not limited to the above content. For example, a structure in which the temperature of the atmospheric system module 850 is regulated by exhaust gas or temperature-regulating water in the vacuum system module 860 may also be used. Figure 16 This diagram illustrates the exhaust line involved in this modified example. The reduced pressure exhaust line 842, now functioning as a heat dissipation line in the film-forming apparatus 114, which is a vacuum system processing device in the vacuum system module, is assumed to function as a heat dissipation line. Furthermore, a heat-conducting member 901 is provided, which is connected to the heat treatment apparatus 853, which is an atmospheric system processing device. In this case, by providing a heat-conducting mechanism 902 that connects the reduced pressure exhaust line 842 (as a heat dissipation line) to the heat-conducting member 901 to transfer heat to the heat treatment apparatus 853, the temperature in the atmospheric system module can be appropriately regulated using the heat dissipation in the vacuum system module. The heat-conducting mechanism 902 can be such that, even when constantly connected, its connection state can be switched based on a signal from a control unit (not shown). Furthermore, the reduced pressure exhaust line 842 can also be replaced with a pipe for supplying temperature-regulating water. In this case, for example, preliminary temperature regulation of the heat treatment apparatus 853 can be performed, using temperature-regulating water to adjust to approximately 60°C, and then further heated to the target temperature using electricity.

[0118] Furthermore, the structure with a vacuum system module in the upper section and an atmospheric system module in the lower section has the following advantages compared to a structure without such modularity.

[0119] • Saves floor space

[0120] By structuring the vacuum and atmospheric systems, which were previously separate devices, into stacked units, space is saved.

[0121] • Q-time control (interlayer process optimization)

[0122] In cases where multiple devices are independently set up, substrate transfer is performed between those devices via OHT. In contrast, by integrating vacuum and atmospheric systems into a single in-line device sharing a common L / P, as in the structure of this embodiment, faster and more stable transfer between processes is possible than OHT transfer—that is, the time required between processes is reduced, and the transfer to the next process is stable. This also has advantages as a holistic solution for mode control. Typically, each individual device is optimized, but because the devices are interconnected as in the structure of this embodiment, it is easier to comprehensively manage their processing conditions, etc., making it easier to provide optimal processing conditions or results for a series of integrated processes.

[0123] Energy conservation and waste control

[0124] Because the modules in the vacuum system and atmospheric system are stacked vertically, energy savings can be achieved in multiple devices located vertically, as described here, by utilizing the structure of one device to control and adjust the environment of another. Regarding waste control, since the vacuum system and atmospheric system modules are stacked vertically, the space is compacted, and the waste exhaust section is also easily compacted. Due to the compactness of the processing equipment, it is easy to install it on a small scale. Furthermore, the management of the amount of waste and its discharge status from the numerous processing steps in the vacuum and atmospheric systems for the substrate can be carried out through a single waste treatment system.

[0125] • Flexible transfer control (easy to transfer multiple times to the same module; free transfer to upper and lower layers) and flexible module configuration (can also be configured for COT only, cleaning only, etching only, etc.)

[0126] It can distribute and transport substrates to the vacuum system and standby system respectively. Furthermore, it can perform multiple processing operations within the same module by moving back and forth between the upper and lower layers. Even when the upper and lower layers are connected on both the CSB side and the opposite side, processing can be smoothly performed by suppressing substrate congestion through a transport path that cycles between the upper and lower layers. Additionally, multiple processing devices do not necessarily need to be placed in the vacuum layer and atmospheric layer; only one type of device can be placed there, offering a high degree of flexibility in device layout.

[0127] Other advantages

[0128] Regarding semiconductor manufacturing, there are situations involving mass production of the same product and small-batch production of multiple varieties. In the structure of this embodiment, because various processing modules are included, the combination of modules used can be selected according to the product type, thus providing an advantage for small-batch, multi-variety production. Mass production also involves parallel processes running on multiple devices, even identical devices. If differences between devices are not considered, stable products cannot be obtained. However, in the structure of this embodiment, process stability is achieved within a relatively closed configuration, enabling efficient production.

[0129] Finally, various exemplary embodiments included in this disclosure are described below in [E1] to [E14].

[0130] [E1]

[0131] A processing apparatus for treating waste liquid discharged from a semiconductor manufacturing apparatus, the processing apparatus comprising:

[0132] A first filter separates the waste liquid into a first solution containing a high concentration or higher of polymeric components and a second solution containing low-molecular-weight components but not containing a high concentration or higher of polymeric components; and

[0133] The low molecular weight component processing unit processes the second solution separated by the first filter to increase the concentration of the low molecular weight component.

[0134] [E2]

[0135] According to the processing apparatus described in [E1], wherein,

[0136] The low molecular weight component processing unit includes: a circulating filtration mechanism that circulates the second solution to filter the low molecular weight component; and a purification mechanism that removes PFAS from the filtrate that has passed through the circulating filtration mechanism.

[0137] [E3]

[0138] According to the processing apparatus described in [E2], wherein,

[0139] The circulating filtration mechanism has multiple second filters and a sequential switching mechanism that switches the sequential passage of the second solution through the multiple second filters in series.

[0140] [E4]

[0141] The processing apparatus according to any one of [E1] to [E3], wherein,

[0142] The first filter and the low molecular weight component treatment unit are configured separately for each type of solvent contained in the waste liquid.

[0143] [E5]

[0144] The processing apparatus according to any one of [E1] to [E4] further comprises:

[0145] The positive development waste liquid treatment department separates TMAH waste liquid into PFAS concentrated developer liquid and PFAS de-PFAS developer liquid.

[0146] A filter for developing waste liquid, which removes polymers from TMAH waste liquid; and

[0147] The developer filter cleaning chamber stores the liquid after the PFAS-removing developer flows counter-currently from the secondary side of the developer waste filter through the developer waste filter.

[0148] [E6]

[0149] The processing apparatus according to any one of [E1] to [E5], wherein,

[0150] The low molecular weight component processing unit further comprises: a storage unit for storing the second solution; and a PFAS trapping unit, the inlet of which is located downstream of the flow of the second solution along the liquid surface of the storage unit.

[0151] [E7]

[0152] According to the processing apparatus described in [E6], wherein,

[0153] The low molecular weight component processing unit also has a microbubble generating unit, which generates microbubbles in the second solution in the storage unit.

[0154] [E8]

[0155] A treatment method for treating waste liquid discharged from a semiconductor manufacturing apparatus includes the following steps:

[0156] The waste liquid is sorted into a first solution containing a specified concentration or higher of high molecular weight components and a second solution containing low molecular weight components but not containing a specified concentration or higher of high molecular weight components; and

[0157] The second solution separated in the sorting step is subjected to a treatment to increase the concentration of the low molecular weight component.

[0158] [E9]

[0159] A substrate processing apparatus comprising:

[0160] Loading and unloading blocks are used to load and unload carriers that hold multiple substrates.

[0161] The atmospheric system processing group includes multiple atmospheric system processing units;

[0162] A vacuum system processing group, comprising multiple vacuum system processing devices, is located directly above the atmospheric system processing group;

[0163] An atmospheric system processing conveyor path for transferring a substrate to the atmospheric system processing device; and

[0164] A conveyor path for vacuum system processing, used to transfer substrates to the vacuum system processing device.

[0165] The conveying path for atmospheric system processing and the conveying path for vacuum system processing are connected to the inlet and outlet blocks.

[0166] [E10]

[0167] According to the substrate processing apparatus described in [E9], wherein...

[0168] It also includes a mounting base configured to cover the atmospheric system processing group and support the vacuum system processing group.

[0169] [E11]

[0170] The substrate processing apparatus according to [E9] or [E10] further comprises:

[0171] A relay block, which is connected to the conveyor path for atmospheric system processing and the conveyor path for vacuum system processing; and

[0172] A bypass conveyor path is provided above the vacuum system processing assembly, connecting the substrate between the inlet / outlet block and the relay block.

[0173] [E12]

[0174] The substrate processing apparatus according to any one of [E9] to [E11], wherein,

[0175] It also includes a pressure reduction and exhaust switching unit, which is connected to the pressure reduction exhaust line of the vacuum system processing device and the atmospheric exhaust line of the atmospheric system processing device. The pressure reduction and exhaust switching unit can reduce the pressure inside the atmospheric system processing device via the atmospheric exhaust line.

[0176] [E13]

[0177] The substrate processing apparatus according to any one of [E9] to [E12] further comprises:

[0178] The exhaust wire of the vacuum system processing device;

[0179] A heat-conducting component, connected to the atmospheric system processing device, capable of conducting heat; and

[0180] A heat-conducting mechanism that connects the heat exhaust wire and the heat-conducting component to transfer heat to the atmospheric system processing device.

[0181] [E14]

[0182] A processing system, comprising:

[0183] The substrate processing apparatus according to any one of [E9] to [E13]; and

[0184] A waste treatment device that treats emissions from the atmospheric system treatment device and emissions from the vacuum system treatment device.

[0185] Explanation of reference numerals in the attached figures

[0186] 10: PFAS non-toxic system; 11: Concentrator; 12: Sulfuric acid treatment tank; 13: Cooler; 14: Non-toxic device; 100: Semiconductor manufacturing equipment; 111: Photolithography equipment; 112: Cleaning equipment; 113: Etching equipment; 114: Film forming equipment.

Claims

1. A processing apparatus for treating waste liquid discharged from a semiconductor manufacturing apparatus, the processing apparatus comprising: A first filter separates the waste liquid into a first solution containing a high concentration or higher of polymeric components and a second solution containing low-molecular-weight components but not containing a high concentration or higher of polymeric components; and The low molecular weight component processing unit processes the second solution separated by the first filter to increase the concentration of the low molecular weight component.

2. The processing apparatus according to claim 1, wherein, The low molecular weight component processing unit includes a circulating filtration mechanism that circulates the second solution to filter the low molecular weight component. And a purification unit that removes PFAS from the filtrate that has passed through the circulating filtration unit.

3. The processing apparatus according to claim 2, wherein, The circulating filtration mechanism has multiple second filters and a sequential switching mechanism that switches the sequential passage of the second solution through the multiple second filters in series.

4. The processing apparatus according to claim 1, wherein, The first filter and the low molecular weight component treatment unit are configured separately for each type of solvent contained in the waste liquid.

5. The processing apparatus according to claim 1, further comprising: The positive development waste liquid treatment department separates TMAH waste liquid into PFAS concentrated developer liquid and PFAS de-PFAS developer liquid. A filter for developing waste liquid, which removes polymers from TMAH waste liquid; and The developer filter cleaning chamber stores the liquid after the PFAS-removing developer flows counter-currently from the secondary side of the developer waste filter through the developer waste filter.

6. The processing apparatus according to claim 1, wherein, The low molecular weight component processing unit further comprises: a storage unit for storing the second solution; and a PFAS trapping unit, the inlet of which is located downstream of the flow of the second solution along the liquid surface of the storage unit.

7. The processing apparatus according to claim 6, wherein, The low molecular weight component processing unit also has a microbubble generating unit, which generates microbubbles in the second solution in the storage unit.

8. A treatment method for treating waste liquid discharged from a semiconductor manufacturing apparatus, comprising the following steps: The waste liquid is sorted into a first solution containing a specified concentration or higher of high molecular weight components and a second solution containing low molecular weight components but not containing a specified concentration or higher of high molecular weight components; and The second solution separated in the sorting step is subjected to a treatment to increase the concentration of the low molecular weight component.

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