A gas distribution chamber and a processing apparatus for semiconductor devices

Abstract

The application provides a gas distribution cavity and a processing equipment of a semiconductor device. The gas distribution cavity comprises a gas inlet, an upper cover plate and a plurality of gas outlets. The lower surface of the upper cover plate extends at least one guide vane, the guide vane is arranged around the gas inlet, the upper surface of the upper cover plate is provided with a plurality of mounting holes, the plurality of mounting holes extend into the guide vane and are used for mounting a first heating element. The plurality of gas outlets are uniformly arranged around the edge of the gas distribution cavity.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device processing, and more specifically to a gas distribution chamber and a semiconductor device processing equipment. Background Technology

[0002] Semiconductor film deposition processes have high requirements for equipment capacity. To meet the needs of large-scale production, the industry has gradually developed deposition equipment with dual-station, four-station, six-station and multi-cavity multi-station structures.

[0003] The core technological challenge of multi-station semiconductor film deposition equipment lies in the consistent control of deposition rates at each station, and uniform gas flow distribution is crucial for ensuring a balanced deposition rate across all stations. Furthermore, the precursor heating temperature is a critical process parameter in semiconductor deposition; its uniformity directly determines the thickness consistency, compositional uniformity, and stress stability of the deposited film. Uneven precursor heating temperature distribution can lead to deviations in the performance of the deposited film, resulting in decreased performance and lower yield of the final semiconductor device.

[0004] Currently, the heating devices used in gas distribution systems in the industry are mainly of two types: mica heating plates and conventional heating belts. Existing technical solutions have many technical defects in practical applications and cannot meet the stringent requirements of high-precision deposition processes such as atomic layer deposition (ALD). They often produce problems such as slow heating response rate, severe temperature control lag, uneven heat distribution leading to mica heating plate breakage, poor thermal conductivity of heating belts, and dead zones in airflow control. They cannot meet the core requirements of high-precision deposition processes for system temperature uniformity and rapid temperature response, and ultimately affect the consistency of film deposition in each process chamber.

[0005] In order to overcome the above-mentioned defects in the prior art, the present invention provides a gas distribution chamber and a semiconductor device processing apparatus, which solves the gas dead zone in the gas distribution system, increases the effective heating area, and extends the channel through which the heating gas flows, so as to achieve sufficient heating of the precursor gas. Summary of the Invention

[0006] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0007] As described above, in order to overcome the aforementioned deficiencies in the prior art, the present invention provides a gas distribution chamber and a semiconductor device processing apparatus. By providing at least one flow guide and embedding a heating element therein, the effective heating area can be increased and the channel through which the heated gas flows can be extended, thereby achieving sufficient heating of the precursor gas, while solving the gas dead zone in the gas distribution system.

[0008] Specifically, the first aspect of the present invention provides a gas distribution chamber, which includes an air inlet, an upper cover plate, and a plurality of air outlets. At least one guide vane extends from the lower surface of the upper cover plate and is disposed around the air inlet. A plurality of mounting holes are provided on the upper surface of the upper cover plate, extending into the guide vane for mounting a first heating element. The plurality of air outlets are evenly distributed around the edge of the gas distribution chamber.

[0009] Furthermore, in some embodiments of the present invention, the above-mentioned gas distribution chamber further includes a lower cover plate. The lower cover plate is sealed to the upper cover plate, and the lower cover plate, together with at least one guide vane, forms multiple gas flow channels, allowing gas to flow through the gas flow channels to multiple gas outlets.

[0010] Furthermore, in some embodiments of the present invention, the first thickness of the upper cover plate near the air inlet is less than the second thickness of the upper cover plate near the plurality of air outlets. And / or the third thickness of the lower cover plate near the air inlet is less than the fourth thickness of the lower cover plate near the plurality of air outlets.

[0011] Furthermore, in some embodiments of the present invention, the distance between the lower surface of the upper cover plate and the upper surface of the lower cover plate decreases radially outward along the air distribution chamber.

[0012] Furthermore, in some embodiments of the present invention, the first end of at least one guide vane is located at the air inlet, while its second end extends radially outward along the air distribution chamber to at least one air outlet.

[0013] Furthermore, in some embodiments of the present invention, the above-mentioned air distribution chamber includes a plurality of guide vanes, wherein at least one guide vane extends outward along a straight trajectory to at least one air outlet, and / or at least one guide vane extends outward along an arcuate trajectory to at least one air outlet.

[0014] Furthermore, in some embodiments of the present invention, when each guide vane extends outward along an arc-shaped trajectory to at least one air outlet, each adjacent guide vane bends in opposite directions.

[0015] Furthermore, in some embodiments of the present invention, the air distribution chamber includes a guide vane, wherein the guide vane extends outward along a spiral trajectory to a plurality of air outlets.

[0016] Furthermore, in some embodiments of the present invention, the aforementioned air distribution chamber further includes a plurality of first heating elements and second heating elements. Each of the aforementioned first heating elements extends into a corresponding mounting hole to heat the corresponding guide vane. The aforementioned second heating elements are mounted in mounting grooves on the upper surface of the upper cover plate and extend on the upper surface of the upper cover plate to heat the upper cover plate.

[0017] A second aspect of the present invention provides a semiconductor device processing apparatus, the apparatus comprising a gas source, a plurality of reaction chambers, and a gas distribution chamber as provided in the first aspect of the present invention. In the gas distribution chamber, the gas inlet is connected to the gas source, and the plurality of gas outlets of the gas distribution chamber are connected to the plurality of reaction chambers. Attached Figure Description

[0018] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0019] Figure 1 A side view schematic diagram of the gas distribution chamber in the prior art is shown.

[0020] Figure 2 A top view schematic diagram of the gas distribution chamber in the prior art is shown.

[0021] Figure 3 A schematic diagram of a top cover plate according to some embodiments of the present invention is shown.

[0022] Figure 4 A schematic diagram of a gas distribution chamber according to some embodiments of the present invention is shown.

[0023] Figure 5 A side view schematic diagram of a gas distribution chamber illustrated according to some embodiments of the present invention is shown.

[0024] Figure 6 A top view schematic diagram of a gas distribution chamber illustrated according to some embodiments of the present invention is shown.

[0025] Figure 7 A schematic diagram illustrating the distribution of guide vanes in a gas distribution chamber according to an embodiment of the present invention is shown.

[0026] Figure 8 A lower schematic diagram of a top cover plate illustrated according to some embodiments of the present invention is shown.

[0027] Figure 9 A cross-sectional schematic diagram of a top cover plate according to some embodiments of the present invention is shown.

[0028] Figure 10 A schematic diagram of a mounting groove in a top cover plate, according to some embodiments of the present invention, is shown.

[0029] Figure 11 A schematic diagram of a second heating element according to some embodiments of the present invention is shown.

[0030] Figure 12 The diagram shows the airflow trajectory of the air chamber viewed from above in the prior art during simulation.

[0031] Figure 13 The diagram shows the airflow trajectory of the gas chamber viewed from the side in the prior art during simulation.

[0032] Figure 14 The diagram shows the airflow traces of the air distribution chamber viewed from above in some embodiments of the present invention during simulation.

[0033] Figure 15 The diagram shows the airflow traces of the air chamber viewed from the side in some embodiments of the present invention during simulation.

[0034] Figure label: Heating device 1 Inlet 2 Top cover 3 Air outlet 4 Flow guide plate 5 Mounting hole 6 First heating element 7 Lower cover plate 8 Second heating element 9 Mounting slot 10 Detailed Implementation

[0035] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0036] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0037] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0038] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0039] As mentioned above, semiconductor film deposition processes place high demands on equipment capacity. To meet the needs of large-scale production, the industry has gradually developed deposition equipment with dual-station, four-station, six-station, and multi-cavity multi-station structures. This type of multi-station deposition equipment can complete the film deposition of multiple products within a single deposition process cycle, effectively improving the overall production capacity of semiconductor film deposition.

[0040] The core technological challenge of multi-station semiconductor film deposition equipment lies in the consistent control of deposition rates at each station. Uniform gas flow distribution is crucial for ensuring a balanced deposition rate across all stations, and the industry requires the flow distribution accuracy of multi-station gas distribution systems to be controlled within 1%. Currently, the mainstream gas distribution solution adopts a mixing bowl structure. This structure uses two opposing gas supply lines to create turbulent mixing of process gases. The gas flow pattern is further regulated by a slit structure, ultimately achieving uniform distribution of multiple gases and providing a stable gas source for the deposition process at each station.

[0041] Furthermore, the precursor heating temperature is a core process parameter in semiconductor deposition. The uniformity of the heating temperature directly determines the thickness consistency, compositional uniformity, and stress stability of the deposited film. Uneven distribution of the precursor heating temperature can lead to deviations in the performance of the deposited film, resulting in decreased performance and reduced yield of the semiconductor device.

[0042] Please refer to Figures 1-2 , Figure 1 A side view schematic diagram of the gas distribution chamber in the prior art is shown. Figure 2 A top view schematic diagram of the gas distribution chamber in the prior art is shown.

[0043] like Figure 1As shown, the heating devices currently used in gas distribution systems in the industry are mainly of two types: mica heating sheets and conventional heating belts. The heating sheets or heating belts are often arranged to wrap around the upper and lower layers of the cavity. Existing technical solutions have many technical defects in practical applications and cannot meet the stringent requirements of high-precision deposition processes such as atomic layer deposition (ALD). The specific technical problems are as follows: Firstly, existing gas distribution systems generally use stainless steel cavity structures. Stainless steel has a low thermal conductivity, with a maximum of only 20 W / (m·K), resulting in a slow overall heating response rate of the cavity and severe temperature control lag, which cannot meet the process requirements of ALD process for rapid temperature rise and fall and precise temperature control.

[0044] Secondly, mainstream mica heating elements have inherent performance defects. Mica material has an extremely low thermal conductivity, with a maximum of only 0.5 W / (m·K), resulting in poor thermal conductivity and slow heating response. Simultaneously, mica is brittle and has weak resistance to thermal cycling shock, making it prone to damage and failure under long-term alternating hot and cold operating conditions, leading to short equipment lifespan and high maintenance costs. In terms of assembly structure, mica heating elements cannot be locked in place with screws, making it difficult to form a tight fit with the gas distribution system cavity and the workpiece to be heated, resulting in insufficient contact clamping force. Under long-term thermal cycling shock conditions, the contact gap between the heating element and the workpiece / cavity will continuously increase, further deteriorating the contact heat conduction effect and reducing overall temperature uniformity. Furthermore, if a stainless steel or aluminum protective shell is matched with the mica heating element, the significant difference in thermal expansion coefficients between mica and the metal shell will generate structural stress during hot and cold cycling, ultimately leading to mica heating element breakage and structural failure.

[0045] Third, existing alternative heating devices still have performance shortcomings. Some existing products use silicone foam heating strips or fiber heating strips to replace mica heating sheets, but the maximum operating temperature of these two types of heating strips does not exceed 220℃, resulting in low temperature resistance and poor temperature uniformity, making them unsuitable for high-temperature, high-precision deposition processes. Furthermore, the newly developed polytetrafluoroethylene (PTFE) foam heating strips have poor normal thermal conductivity in their bonding layer, leading to thermal lag and uneven heat distribution, which also fails to meet the core requirements of high-precision deposition processes for system temperature uniformity and rapid temperature response.

[0046] Fourth, existing gas flow control structures suffer from dead zones in gas flow. For example... Figure 2 As shown, the current gas distribution system relies on the counter-current flow of gas from two pipelines and throttling through a slit to regulate the flow pattern of the precursor gas. However, because the inlet pressures of the two gas pipelines are exactly the same, the intermediate region between the two pipelines (e.g., Figure 2(The black fan-shaped area marked in the middle) has no pressure difference to drive gas flow, and the gas is in a static and stagnant state. This structural defect will cause the formation of a circumferential gas flow dead zone in the middle area of ​​the two pipelines in the dual-station gas distribution structure and the middle area of ​​the adjacent pipelines in the six-station multi-pipeline gas distribution structure. This will easily cause uneven gas distribution and deviation in precursor deposition, ultimately affecting the consistency of film deposition at each station.

[0047] As described above, in order to overcome the aforementioned deficiencies in the prior art, the present invention provides a gas distribution chamber and a semiconductor device processing apparatus. By providing at least one flow guide and embedding a heating element therein, the effective heating area can be increased and the channel through which the heated gas flows can be extended, thereby achieving sufficient heating of the precursor gas, while solving the gas dead zone in the gas distribution system.

[0048] In some non-limiting embodiments, the semiconductor device processing apparatus provided in the second aspect of the present invention includes the gas distribution chamber provided in the first aspect of the present invention.

[0049] Specifically, the second aspect of the present invention provides a semiconductor device processing apparatus including a gas source, multiple reaction chambers, and a gas distribution chamber as provided in the first aspect of the present invention. In the gas distribution chamber, the gas inlet is connected to the gas source, and the multiple gas outlets of the gas distribution chamber are connected to the multiple reaction chambers.

[0050] Please refer to the following. Figures 3-4 , Figure 3 A schematic diagram of a top cover plate according to some embodiments of the present invention is shown. Figure 4 A schematic diagram of a gas distribution chamber according to some embodiments of the present invention is shown.

[0051] like Figures 3-4 As shown, a first aspect of the present invention provides a gas distribution chamber, which includes an air inlet 2, an upper cover plate 3, and a plurality of air outlets 4 (e.g., 6). At least one guide vane 5 (e.g., 12) extends from the lower surface of the upper cover plate 3, and the guide vane 5 is arranged around the air inlet 2. The upper surface of the upper cover plate 3 is provided with a plurality of mounting holes 6, into which the guide vane extends for mounting a first heating element 7. The plurality of air outlets 4 are evenly arranged around the edge of the gas distribution chamber.

[0052] It should be noted that the above examples of the number of air outlets and guide vanes are merely some non-limiting embodiments provided by the present invention.

[0053] Thus, by setting multiple mounting holes that extend into the guide vanes and installing heating elements therein, the present invention increases the heating area of ​​the gas by utilizing the guide vanes, so that the gas is fully heated again when flowing through the guide vanes, thereby achieving sufficient and efficient heating of the precursor.

[0054] Furthermore, such as Figure 4 As shown, in some embodiments of the present invention, the above-mentioned gas distribution chamber further includes a lower cover plate 8. The lower cover plate is sealed to the upper cover plate 3, and the lower cover plate 8, together with at least one guide plate 5, forms multiple gas flow channels, allowing gas to flow through the gas flow channels to multiple gas outlets.

[0055] It should be noted that the upper and lower cover plates can be made of stainless steel, copper, aluminum, or other heat-conducting materials.

[0056] Thus, by using the gas flow channel formed by the lower cover plate and the guide vanes, the present invention extends the path of the gas through the heatable guide vanes in the gas distribution chamber, allowing it to stay in the gas distribution chamber for a longer distance, thereby achieving a more thorough heating effect.

[0057] Further, please refer to Figure 5 , Figure 5 A side view schematic diagram of a gas distribution chamber illustrated according to some embodiments of the present invention is shown.

[0058] like Figure 5 As shown, in some embodiments of the present invention, the first thickness of the upper cover plate 3 near the air inlet is less than the second thickness of the upper cover plate 3 near the plurality of air outlets, and the third thickness of the lower cover plate 8 near the air inlet is less than the fourth thickness of the lower cover plate 8 near the plurality of air outlets.

[0059] In other embodiments, the first thickness of the upper cover 3 near the air inlet is less than the second thickness of the upper cover 3 near the plurality of air outlets, and the thickness of the lower cover 8 is uniform.

[0060] In other embodiments, the third thickness of the lower cover plate 8 near the air inlet is less than the fourth thickness of the lower cover plate 8 near the plurality of air outlets, and the thickness of the upper cover plate 3 is uniform.

[0061] It should be noted that the first and second thicknesses of the upper cover plate are sloped, and the third and fourth thicknesses of the lower cover plate are also sloped, so that the gas flows evenly to multiple outlets.

[0062] Thus, by providing thicker upper and lower cover plates near the air outlet compared to the air inlet, the present invention enables the gas to be gathered and flowed toward the air outlet, thereby helping to eliminate eddies and dead zones.

[0063] Furthermore, in some embodiments of the present invention, the distance between the lower surface of the upper cover plate and the upper surface of the lower cover plate decreases radially outward along the air distribution chamber.

[0064] Thus, by controlling the radial spacing of the gas distribution chambers, the present invention improves the dead zone and eddies caused by gas convection.

[0065] Please refer to the following. Figure 6 , Figure 6 A top view schematic diagram of a gas distribution chamber illustrated according to some embodiments of the present invention is shown.

[0066] Furthermore, in some embodiments of the present invention, at least one guide vane 5 has a first end located at the air inlet 2, while its second end extends radially outward along the air distribution chamber to at least one air outlet 4.

[0067] Thus, by setting at least one guide vane, the present invention can improve the gas flow in the lateral direction of the gas distribution chamber, generate turbulence, and make the internal pressure and velocity of the gas more uniform towards the outlet position.

[0068] Furthermore, in some embodiments of the present invention, the above-mentioned air distribution chamber includes a plurality of guide vanes 5, wherein at least one guide vane 5 extends outward along a straight trajectory to at least one air outlet 4, and / or at least one guide vane 5 extends outward along an arcuate trajectory to at least one air outlet 4.

[0069] In other embodiments, at least one guide vane 5 extends outward along a straight trajectory to at least one air outlet 4.

[0070] In other embodiments, such as Figure 6 As shown, at least one guide vane 5 extends outward along the same arc-shaped trajectory to at least one air outlet 4.

[0071] Please continue to refer to Figure 7 , Figure 7 A schematic diagram illustrating the distribution of guide vanes in a gas distribution chamber according to an embodiment of the present invention is shown.

[0072] like Figure 7 As shown, further, in some embodiments of the present invention, when each guide vane 5 extends outward along an arc trajectory to at least one air outlet, each adjacent guide vane 5 bends in opposite directions.

[0073] In some embodiments, guide vanes bent in the same direction can concentrate airflow to the outlet, while guide vanes bent in the opposite direction cause airflow to reflect off the sidewall of the chamber and flow into the outlet, further increasing the heating path.

[0074] Furthermore, in some embodiments of the present invention, the air distribution chamber includes a guide vane, wherein the guide vane extends outward along a spiral trajectory to a plurality of air outlets.

[0075] Please refer to the following. Figures 8-11 , Figure 8 A schematic diagram of the lower part of the upper cover plate, according to some embodiments of the present invention, is shown. Figure 9 A cross-sectional schematic diagram of a top cover plate according to some embodiments of the present invention is shown. Figure 10A schematic diagram of a mounting groove in a top cover plate, according to some embodiments of the present invention, is shown. Figure 11 A schematic diagram of a second heating element according to some embodiments of the present invention is shown.

[0076] Furthermore, such as Figures 8-11 As shown, in some embodiments of the present invention, the above-mentioned air distribution chamber further includes a plurality of first heating elements 7 and second heating elements 9. Please refer to... Figure 8 At least one guide vane 5 extends from the lower surface of the upper cover plate 3, and multiple mounting holes 6 are provided on the upper surface of the upper cover plate 3. Each of the aforementioned first heating elements 7 extends into the corresponding mounting hole 6 to heat the corresponding guide vane 5. Please refer to... Figures 9-10 The upper surface of the upper cover plate is also provided with a mounting groove 10 for accommodating the second heating element 9. The second heating element 9 is installed in the mounting groove 10 on the upper surface of the upper cover plate and extends on the upper surface of the upper cover plate to heat the upper cover plate. The second heating element 9 is described in detail below. Figure 11 As shown in the embodiment, by providing a second heating element, the present invention can fully heat the upper surface of the upper cover plate, further improving temperature uniformity and preventing hot and cold convection of gas in the diversion cavity.

[0077] It should be noted that the materials of the first heating element and the second heating element can be copper, nickel, or nickel-chromium alloy, and the mounting groove can be made by processes such as riveting, casting, and soldering.

[0078] It should be noted that, compared to the solution that only sets a second heating element, the present invention increases the heating area by setting a first heating element that extends into the guide plate, thereby achieving a more uniform heating effect.

[0079] Next, we will combine Figures 12-15 A brief description of the simulation experiment of the gas distribution chamber in the prior art and this invention. Please refer to... Figures 12-15 , Figure 12 The diagram shows the airflow trajectory of the gas chamber from a top-down view in the prior art during simulation. Figure 13 The diagram shows the airflow trajectory viewed from the side of the gas chamber in the prior art during simulation. Figure 14 The diagram shows the airflow traces of the air distribution chamber from a top view in some embodiments of the present invention during simulation. Figure 15 The diagram shows the airflow traces of the air chamber viewed from the side in some embodiments of the present invention during simulation.

[0080] For a simulation experiment of prior art, such as Figures 12-13 As shown, in the prior art, for the gas distribution chamber, vortices and dead zones are easily formed in the middle area of ​​the two gas outlet pipes in the chamber due to gas collision.

[0081] For a simulation experiment in an embodiment of the present invention, such as Figures 14-15As shown, for the gas distribution chamber in this invention, due to the provision of multiple guide elements to improve the gas flow direction and the decrease of the distance between the lower surface of the upper cover plate and the upper surface of the lower cover plate along the radial direction of the gas distribution chamber, this invention causes the gas to gather and flow towards the gas outlet, eliminating dead zones and vortex regions.

[0082] Next, please refer to Table 1, which shows a comparison of the flow rates of each air outlet in the gas distribution chamber of the prior art and the present invention in the simulation experiment. The unit of each flow rate is kg / s.

[0083] Table 1 compares the flow rates of each outlet of the gas chamber in the prior art and the present invention in the simulation experiment.

[0084]

[0085] As shown in Table 1, it can be seen that, compared with the gas distribution chamber in the prior art, the flow rate of each outlet of the gas distribution chamber provided by the present invention is more uniform. The flow rate uniformity of each outlet of the gas distribution chamber in the prior art and the present invention is evaluated using the non-uniformity coefficient. , ,in, Represents standard deviation, Represents the average value. The coefficient of non-uniformity, Representing the Based on the formula above, in the simulation experiment, the non-uniformity coefficient of the air distribution chamber in the prior art is 0.08, while that of the air distribution chamber in this invention is 0.021. Therefore, the air outlets in the air distribution chamber of this invention have better uniformity.

[0086] In summary, the present invention provides a gas distribution chamber and a semiconductor device processing device. By setting at least one flow guide and embedding a heating element therein, the gas dead zone in the gas distribution system is solved, the effective heating area is increased, and the channel through which the heated gas flows is extended, so as to achieve sufficient heating of the precursor gas.

[0087] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0088] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas distribution chamber, characterized in that, include: Air intake; A top cover plate, wherein at least one guide vane extends from the lower surface of the top cover plate and is arranged around the air inlet; the upper surface of the top cover plate is provided with a plurality of mounting holes, the plurality of mounting holes extending into the guide vane for mounting a first heating element; and Multiple air outlets are evenly arranged around the edge of the air distribution chamber.

2. The gas distribution chamber as described in claim 1, characterized in that, Also includes: The lower cover plate is sealed to the upper cover plate. The lower cover plate, together with the at least one guide plate, forms multiple gas channels, allowing gas to flow through the gas channels to the multiple gas outlets.

3. The gas distribution chamber as described in claim 2, characterized in that, The first thickness of the upper cover plate near the air inlet is less than the second thickness of the upper cover plate near the plurality of air outlets; and / or The third thickness of the lower cover plate near the air inlet is less than the fourth thickness of the lower cover plate near the plurality of air outlets.

4. The gas distribution chamber as described in claim 3, characterized in that, The distance between the lower surface of the upper cover plate and the upper surface of the lower cover plate decreases radially outward from the air distribution chamber.

5. The gas distribution chamber as described in claim 1 or 3, characterized in that, At least one of the guide vanes has a first end located at the air inlet, and a second end extending radially outward along the air distribution chamber to at least one of the air outlets.

6. The gas distribution chamber as described in claim 5, characterized in that, The air distribution chamber includes multiple guide vanes, wherein, At least one of the guide vanes extends outward along a straight trajectory to at least one of the air outlets; and / or At least one of the guide vanes extends outward along an arc-shaped trajectory to at least one of the air outlets.

7. The gas distribution chamber as described in claim 6, characterized in that, As each of the guide vanes extends outward along an arc-shaped trajectory to at least one of the air outlets, each adjacent guide vane bends in the opposite direction.

8. The gas distribution chamber as described in claim 5, characterized in that, The air distribution chamber includes one of the guide vanes, wherein, The guide vane extends outward along a spiral trajectory to the plurality of air outlets.

9. The air distribution chamber as described in claim 1, characterized in that, The gas distribution chamber also includes: A plurality of first heating elements, wherein each first heating element extends into a corresponding mounting hole to heat a corresponding guide vane; and The second heating element is installed in a mounting groove on the upper surface of the upper cover plate and extends on the upper surface of the upper cover plate to heat the upper cover plate.

10. A semiconductor device processing apparatus, characterized in that, include: Gas source; Multiple reaction chambers; as well as The gas distribution chamber as described in any one of claims 1 to 9, wherein the gas inlet of the gas distribution chamber is connected to the gas source, and the plurality of gas outlets of the gas distribution chamber are connected to the plurality of reaction chambers.

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