Steam chamber and semiconductor package module and power conversion device including the same

Abstract

Steam chamber and semiconductor package module and power conversion device including the same. The steam chamber for a semiconductor package module according to an embodiment can include a lower metal plate, a hollow structure, and an upper metal plate sequentially disposed. The lower metal plate can include a first plate, a second plate, and a third plate sequentially disposed. A coefficient of thermal expansion of the second plate can be less than a coefficient of thermal expansion of the first plate or the third plate.

Description

Technical Field

[0001] This embodiment relates to a vapor chamber for a semiconductor packaging module and a semiconductor packaging module, as well as a power conversion device including the semiconductor packaging module. Background Technology

[0002] With advancements in the performance of electrical and electronic products, semiconductor packages, which utilize multiple semiconductor devices mounted on a circuit board, offer the advantages of effectively utilizing the mounting area of ​​semiconductor devices and transmitting high-speed signals through short signal transmission paths between them.

[0003] Meanwhile, one of the fastest-growing sectors in the semiconductor market is the data sensor technology field, which utilizes AI semiconductors. In data centers, the use of AI semiconductors, consuming unprecedented levels of power, is increasing, thus placing great emphasis on thermal management techniques for semiconductor packaging.

[0004] Therefore, the semiconductor and packaging market, which is currently experiencing high growth in the data center sector, is adopting many new technologies to protect thermal management.

[0005] In addition, 1200V, 200A high-voltage / high-power SiC power conversion modules are used to improve the performance of hybrid and electric vehicles as well as autonomous vehicles. During the operation of these high-performance electric vehicles, the operating temperature of the power semiconductor devices will be achieved to an average of 300°C or higher, with a maximum instantaneous operating temperature of 350°C to 700°C, which is an ultra-high temperature operating condition.

[0006] In these ultra-high temperature, high voltage, and high current operating environments, the existing bonding materials themselves may be remelted, and thermal trapping may occur due to the pores present in the bonding area. This can rapidly degrade the lifespan of the power semiconductor module and lead to thermal runaway, which may cause damage to the power semiconductor device and seriously affect the safety of the driver.

[0007] Recently, various heat dissipation components and modules, such as heat sinks, heat plates, heat pipes, and vapor chambers, have been studied to address the heat generation issues of electronic devices such as AI semiconductors and power semiconductor modules.

[0008] Figure 1A This is a diagram of the semiconductor package module (10A) of the first comparative example, which includes the internal vapor chamber to be studied.

[0009] The semiconductor packaging module (10A) of the first comparative example includes an electronic device (50), a metal cover (60), a vapor chamber (80), and a heat sink (90). In order to release the heat generated from the electronic device (50) upward, a metal cover (60) is provided on the electronic device (50), and the electronic device (50) and the metal cover (60) can be bonded by a first adhesive layer (40P).

[0010] Furthermore, the steam chamber (80) and the radiator (90) are disposed on the metal cover (60), and the metal cover (60) and the steam chamber (80) can be joined by a second adhesive layer (70).

[0011] Meanwhile, in the semiconductor packaging module (10A) of the first comparative example, the first-first adhesive layer (40P) is formed of a polymer-based material.

[0012] However, the first-to-first adhesive layer (40P) of the polymer-based material has low thermal conductivity, which causes the heat generated from the electronic device (50) to not diffuse and to concentrate in the center, thus reducing heat dissipation efficiency. Therefore, the problem with the semiconductor package module (10A) of the first comparative example is that the temperature of the electronic device (50) rises, so the driving power will be reduced to the temperature of the electronic device (50) itself, and the performance will be reduced by 30% or less.

[0013] Next, Figure 1B This is a diagram of a second comparative example semiconductor packaging module (10B), including the internal vapor chamber under investigation. Figure 1C This is a photograph of the delamination problem (DP) in the semiconductor packaging module (10B) of the second comparative example.

[0014] Unlike the first comparative example, in the semiconductor packaging module (10B) of the second comparative example, a method for forming the first and second adhesive layers (40M) with a metal material was investigated to improve the efficiency of upward heat transfer from the electronic device (50). However, there is a difference in the coefficient of thermal expansion between the metal cover (60) and the electronic device (50), and warping occurs when the temperature of the electronic device (50) increases rapidly. This leads to cracks and voids in the first and second adhesive layers (40M), resulting in delamination (DP) problems in the first and second adhesive layers (40M).

[0015] Therefore, existing technologies attempt to use metal adhesive layers to effectively transfer heat generated from electronic devices upwards, but they face the technical problem of delamination in the metal adhesive layer due to differences in thermal expansion coefficients. Summary of the Invention

[0016] Therefore, this disclosure relates to a vapor chamber for a semiconductor packaging module and a semiconductor packaging module, as well as a power conversion device including a semiconductor packaging module, which substantially eliminates one or more problems caused by the aforementioned limitations and disadvantages.

[0017] One of the technical objectives of this embodiment is to solve the technical contradiction of delamination occurring in the metal adhesive layer due to differences in thermal expansion coefficients, while effectively transferring heat generated from electronic devices upwards using the metal adhesive layer. The technical objectives of this embodiment are not limited to those described in this work, but include those that can be understood from the description of this invention.

[0018] According to the embodiments, the vapor chamber for a semiconductor packaging module may include a lower metal plate (133), a hollow structure (132) and an upper metal plate (131) arranged in sequence, and the lower metal plate (133) may include a first plate (136), a second plate (137) and a third plate (138) arranged in sequence.

[0019] The coefficient of thermal expansion of the second plate (137) can be less than that of the first plate (136) or the third plate (138).

[0020] The thickness of the first plate (136) can be greater than the thickness of the third plate (138).

[0021] The second metal plate (137) can be positioned closer to the upper surface of the lower metal plate (133) rather than the lower surface of the lower metal plate.

[0022] The lower plate may also include a heat-conducting plug (139) within the second plate (137).

[0023] The heat plug (139) can have a higher thermal conductivity than the second plate (137), and the heat plug (139) can have a lower coefficient of thermal expansion than the second plate (137).

[0024] Furthermore, the semiconductor packaging module including a vapor chamber according to the embodiment may include a substrate (110), an electronic device (150) disposed on the substrate (110), and a vapor chamber (130) disposed on the electronic device (150).

[0025] The steam chamber (130) may include a lower metal plate (133), a hollow structure (132), and an upper metal plate (131) arranged in sequence. The lower metal plate (133) may include a first plate (136), a second plate (137), and a third plate (138) arranged in sequence in the upward direction.

[0026] The coefficient of thermal expansion of the second plate (137) can be less than that of the first plate (136) or the third plate (138).

[0027] Additionally, the embodiment may include a first adhesive layer (140) disposed between the electronic device (150) and the vapor chamber (130), and the first adhesive layer (140) may include a metallic material.

[0028] The coefficient of thermal expansion of the second plate (137) can be greater than or equal to the coefficient of thermal expansion of the electronic device (150).

[0029] The thickness of the first plate (136) can be greater than the thickness of the third plate (138).

[0030] The second plate (137) can be positioned adjacent to the upper surface of the lower metal plate (133) instead of the lower surface.

[0031] The second plate (137) may include a coefficient of thermal expansion of... to Metallic or ceramic materials within the specified range.

[0032] The lower plate may also include a heat-conducting plug (139) within the second plate (137).

[0033] The heat plug (139) can have a higher thermal conductivity than the second plate (137), and the heat plug (139) can have a lower coefficient of thermal expansion than the second plate (137).

[0034] Furthermore, the semiconductor packaging module including a vapor chamber according to the embodiment may include a substrate (110), an electronic device (150) disposed on the substrate (110), a vapor chamber (130) disposed on the electronic device (150), and a first adhesive layer (140) disposed between the electronic device (150) and the vapor chamber (130).

[0035] The steam chamber (130) may include a lower metal plate (133), a hollow structure and an upper metal plate (131) arranged in sequence. The lower metal plate (133) may include a first plate (136), a second plate (137) and a third plate (138) arranged in sequence in the upward direction.

[0036] The thickness of the first plate (136) can be greater than the thickness of the third plate (138).

[0037] Additionally, the implementation may include a first adhesive layer (140) disposed between the electronic device (150) and the vapor chamber (130).

[0038] The first adhesive layer (140) may include a metallic material, and the coefficient of thermal expansion of the second plate (137) may be less than that of the first and third plates.

[0039] The lower plate may also include a heat-conducting plug (139) within the second plate (137).

[0040] The heat plug (139) can have a higher thermal conductivity than the second plate (137), and the heat plug (139) can have a lower coefficient of thermal expansion than the second plate (137).

[0041] Additionally, the power conversion device according to the embodiments may include any of the semiconductor package modules.

[0042] According to one embodiment, by using a metal adhesive layer, the technical problem of delamination in the metal adhesive layer due to differences in thermal expansion coefficients can be solved, while effectively transferring heat generated from the electronic device upwards.

[0043] For example, refer to Figure 2 This embodiment has special technical effects, which can solve the technical contradiction problem of delamination in the metal bonding layer due to the difference in thermal expansion coefficient by controlling the thermal expansion coefficient of the lower metal plate (133) of the steam chamber (130) in contact with the electronic device (150) and effectively transferring the heat generated from the electronic device upward by using a metal bonding layer including metal material as the first bonding layer (140).

[0044] Furthermore, according to the embodiment, when manufacturing the vapor chamber (130), a material is included that can reduce the difference in the coefficient of thermal expansion (CTE) at the surface in contact with the electronic device (150), and due to the reduction in the difference in the coefficient of thermal expansion, the deformation between the electronic device and the vapor chamber (130) caused by temperature changes can be minimized, so that reliability and heat dissipation efficiency can be significantly improved without delamination by using a metal-based adhesive layer with high hardness and high thermal conductivity, thereby providing the composite technology effect.

[0045] Furthermore, according to the implementation method, there is a combined technical effect, namely, the heat generated from the electronic device can be rapidly diffused to further improve the heat dissipation performance, while preventing the warping problem of the vapor chamber contacting the electronic device, thereby further improving reliability.

[0046] For example, refer to Figure 3 Since the first plate (136) adjacent to the electronic device (150) in the steam chamber (130) is formed to be larger than the third plate (138), the heat generated from the electronic device (150) can be dissipated quickly to further improve the heat dissipation performance.

[0047] Furthermore, since the first thickness (T1) of the first plate (136) is controlled to be greater than the third thickness (T3) of the third plate (138), the second plate (137) can be set to be offset towards the upper region based on the horizontal center within the lower metal plate (133). Therefore, the coefficient of thermal expansion of the metal material disposed on the upper side of the second plate (137) and the coefficient of thermal expansion of the metal material disposed below the second plate (137) can be set symmetrically about the second plate (137). Therefore, this embodiment has the following technical effects: the steam chamber (130) can prevent warping of the steam chamber by making the upper and lower coefficients of thermal expansion symmetrical about the second plate (137), and prevent peeling of the first adhesive layer, thereby further improving reliability.

[0048] In addition, refer to Figure 4 The steam chamber according to the second embodiment may also include a heat-conducting plug (139) in the second plate (137), thereby providing a combined technical effect of improving heat dissipation performance and reliability.

[0049] For example, the second plate (137) may include a heat-conducting plug (139) that fills holes penetrating the upper and lower portions, and the material of the heat-conducting plug (139) may be filled with a metallic material having a higher thermal conductivity than the material of the second plate (137).

[0050] Therefore, the heat generated from the electronic device can be effectively transferred from the first plate (136) to the third plate (138) through the second plate (137) and the heat pipe (139), and the second plate (137) of the vapor chamber can generally be composed of a material with a thermal expansion coefficient higher than that of the electronic device, thereby minimizing the thermal deformation of the vapor chamber (130) due to the reduction of the difference in thermal expansion coefficient, thereby improving reliability and further enhancing heat dissipation performance.

[0051] In addition, refer to Figure 6A Implementation (E) shows significantly improved heat dissipation performance, which allows the temperature of the semiconductor chip to remain low and to drop to a lower temperature more quickly even when the temperature is raised during operation.

[0052] Furthermore, when the implementation method (E) and the comparative example (R) reach the same temperature during CPU chip operation, due to... Figure 6B and Figure 6C The highly efficient heat dissipation shown in Implementation (E) allows for higher performance and efficiency by expressing higher clock frequencies and power consumption while maintaining the same operating temperature.

[0053] For example, refer to Figure 6BIn the case of Comparative Example (R), due to the low heat dissipation efficiency, the clock frequency of the CPU chip is reduced to extend the life of the CPU chip. In Comparative Example (R), the clock frequency is reduced significantly, resulting in a significant reduction in the performance of the CPU chip.

[0054] On the other hand, in the case of embodiment (E), when the semiconductor packaging module including the vapor chamber according to the embodiment is applied, the heat dissipation performance is significantly improved, so that the reduction of the CPU chip clock frequency is almost zero or very small compared with the comparative example (R), and thus there is a special technical effect that the performance of the CPU chip can be maximized.

[0055] In addition, refer to Figure 6C In the case of Comparative Example (R), due to the low heat dissipation efficiency, the power of the CPU chip is reduced to extend the life of the CPU chip. In this case, the processor power is reduced significantly in Comparative Example (R), resulting in a significant reduction in the performance of the CPU chip.

[0056] On the other hand, in implementation (E), when a semiconductor packaging module including a vapor chamber is applied, the heat dissipation performance is significantly improved. Therefore, compared with comparative example (R), the power consumption decreases by almost zero or very little over time, thus achieving a special technical effect that can maintain the high performance of the CPU chip.

[0057] The technical effects of the embodiments are not limited to those described herein, but include those that can be understood from the description of the present invention. Attached Figure Description

[0058] The accompanying drawings, which are included to provide a further understanding of this disclosure and are incorporated into and constitute a part of this disclosure, illustrate various aspects of this disclosure and, together with the specification, serve to explain the principles of this disclosure.

[0059] In the attached diagram: Figure 1A This is a diagram of the semiconductor package module (10A) of Comparative Example 1, which includes the internal vapor chamber to be studied.

[0060] Figure 1B This is a diagram of the semiconductor packaging module (10B) of Comparative Example 2, which includes the internal vapor chamber to be studied.

[0061] Figure 1C This is a photograph of the layering problem (DP) in the semiconductor packaging module (10B) of the second comparative example.

[0062] Figure 2 This is a cross-sectional view of a semiconductor packaging module including a vapor chamber for a semiconductor packaging module, according to an embodiment.

[0063] Figure 3 It shows in detail the basis Figure 2 A diagram of a vapor chamber for a semiconductor packaging module according to an embodiment.

[0064] Figure 4 This is a diagram showing a vapor chamber for a semiconductor packaging module according to a second embodiment.

[0065] Figure 5 This is a diagram illustrating a semiconductor packaging module including a vapor chamber for a semiconductor packaging module according to a third embodiment.

[0066] Figures 6A to 6C The graphs show the package temperature, CPU chip operating frequency, and processor power consumption over time for the embodiment (E) and the comparative example (R), respectively. Detailed Implementation

[0067] In the following description, various aspects disclosed in this specification will be described in detail with reference to the accompanying drawings. For ease of writing, the suffixes “module” and “part” used for elements in the following description are given or used interchangeably and do not inherently have different meanings or functions. Furthermore, the accompanying drawings are intended to facilitate an easy understanding of the various aspects disclosed in this specification, and the technical concepts disclosed in this specification are not limited to the drawings. Additionally, when an element such as a layer, region, or substrate is mentioned as existing “on” another element, this includes that it may be directly on the other element, or that other intermediate elements may exist therebetween.

[0068] In the specification or claims, the meaning of "element A includes at least one of a, b, and / or c" can include When component A includes component a When component A includes component b When component A includes component c When component A includes components a and b When component A includes components b and c When element A includes elements a and c, and When element A includes all elements a, b, and c. Unless the context clearly indicates otherwise, the singular expression includes both the plural and singular expressions. For example, the meaning of "element A includes a structure" can include the meaning of "element A includes one or more structures".

[0069] (Example)

[0070] Figure 2 This is a cross-sectional view of a semiconductor packaging module including a vapor chamber for semiconductor packaging, according to an embodiment. In the following, the "semiconductor packaging module" including the vapor chamber for semiconductor packaging will be abbreviated as "semiconductor packaging module".

[0071] refer to Figure 2 The semiconductor packaging module according to the embodiment may include a substrate (110), electronic devices (150), and a vapor chamber (130). Specifically, the substrate (110) may include at least one of a plurality of insulating layers, wiring layers, and through-hole electrodes. The substrate (110) may be a semiconductor packaging substrate. The semiconductor package using this embodiment may be one of, but is not limited to, FC-BGA (FlipChip Ball Grid Array), CSP (Chip Scale Package), FC-CSP (Flip Chip-Chip Scale Package), POP (Package On Package), and SIP (System In Package). The substrate (110) may also include an interposer substrate (not shown) for mounting the electronic devices (150) on the interposer substrate, but is not limited to this.

[0072] Furthermore, the electronic device (150) may be a semiconductor device. For example, the electronic device (150) may be a high-performance semiconductor, such as an AI semiconductor, a processor for a data center, a power semiconductor for an electric vehicle inverter, etc., but is not limited thereto.

[0073] For example, the electronic device (150) may include semiconductor devices as active or passive devices. Active devices may be semiconductor chips in the form of integrated circuits (ICs), in which hundreds to millions of devices are integrated onto a single chip. Furthermore, semiconductor devices may be logic chips, memory chips, etc. For example, logic chips may be graphics processing units (GPUs), central processing units (CPUs), digital signal processors, encryption processors, microprocessors, analog-to-digital converters, etc.

[0074] Additionally, the memory chip used in the application implementation can be a stacked memory such as HBM. Furthermore, the memory chip can include volatile memory such as DRAM, non-volatile memory such as ROM, flash memory, etc.

[0075] Furthermore, semiconductor packages can be used in smartphones, personal digital assistants, digital cameras, digital still cameras, vehicles, high-performance servers, network systems, computers, monitors, tablet computers, laptop computers, netbooks, televisions, video games, smartwatches, automobiles, etc. However, the invention is not limited thereto, and it will be apparent that semiconductor packages can be any other electronic device that processes data.

[0076] Furthermore, the electronic device (150) can be a power semiconductor comprising a drain, a semiconductor epitaxial layer, a source, and a gate. For example, the epitaxial layer of the power semiconductor using this embodiment can include Si or SiC, but is not limited thereto. When the electronic device (150) is a power semiconductor device comprising Si or SiC, the coefficient of thermal expansion of the power semiconductor can be... to However, it is not limited to this.

[0077] The electronic device (150) can be electrically connected to the substrate (110) through a connection portion (155) including solder.

[0078] Next, the steam chamber (130) may include an upper metal plate (131), a hollow structure (132), and a lower metal plate (133). The upper metal plate (131) and the lower metal plate (133) may be joined at both ends, and the hollow structure (132) may be disposed between them. Figure 2 In the middle, one side of the upper metal plate (131) is shown as having a bevel, but is not limited thereto.

[0079] For example, the upper metal plate (131) of the steam chamber (130) of the embodiment can be formed by using a material with excellent ductility (such as Cu), such that the upper metal plate (131) can be bent to be bonded to the lower metal plate (133).

[0080] In addition, another embodiment of the steam chamber (130) may have an intermediate metal plate (not shown) in which a hollow structure (132) is formed, and in which the intermediate metal plate is inserted between the upper metal plate (131) and the lower metal plate (133) and then joined together.

[0081] refer to Figure 2 The lower metal plate (133) of the steam chamber (130) in the embodiment may include multiple plates. Specifically, the lower metal plate (133) may include a first plate (136), a second plate (137), and a third plate (138) arranged sequentially in the vertical direction. The lower metal plate (133) may be formed by metal bonding or sintering processes.

[0082] Furthermore, the first plate (136) and the third plate (138) may comprise the same material. Additionally, the first plate (136) and the third plate (138) may comprise the same material as the upper metal plate (131). For example, the first plate (136), the third plate (138), and the upper metal plate (131) may comprise copper, but are not limited thereto. When the upper metal plate (131), the first plate, and the third plate (138) comprise copper, the coefficient of thermal expansion may be... .

[0083] Additionally, the second plate (137) may include a different material than the first plate (136) and the third plate (138). Specifically, the second plate (137) may include a metallic material or a ceramic material.

[0084] For example, when the second plate (137) may include a metallic material, the coefficient of thermal expansion of the metallic material of the second plate (137) may be less than the coefficient of thermal expansion of the metallic materials of the first plate (136) and the third plate (138).

[0085] Furthermore, the coefficient of thermal expansion of the metal material of the second plate (137) can be greater than or equal to the coefficient of thermal expansion of the electronic device (150). Therefore, the metal material of the second plate (137) can have a coefficient of thermal expansion of... to Metallic materials within the range. For example, the second plate (137) may include, but is not limited to, gold (Ag), iron (Fe), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), etc. The second plate (137) may be formed with metallic bonds to the first plate (136) and the third plate (138).

[0086] Furthermore, the second plate (137) may include a ceramic material, and in this case, the ceramic material of the second plate (137) may have a coefficient of thermal expansion of [missing value]. to Ceramic materials within the range. For example, the second plate (137) may include, for example, ceramic materials within the range. , ALN Inorganic materials such as, but not limited to, those.

[0087] Therefore, since the coefficient of thermal expansion of the second plate (137) of the lower metal plate (133) is smaller than that of the first plate (136) and the third plate (138), the implementation can reduce the difference in the coefficients of thermal expansion between the steam chamber (130) and the electronic device (150). Therefore, as the difference in the coefficients of thermal expansion between the steam chamber (130) and the electronic device (150) decreases, the implementation can prevent thermal deformation of the steam chamber (130) and the electronic device (150).

[0088] Alternatively, the implementation may include a post (118) disposed on the substrate (110), and the post (118) may be disposed between the substrate (110) and the vapor chamber (130). In addition, the post (118) may be configured to overlap with the electronic device (150) in the horizontal direction.

[0089] The column (118) and the steam chamber (130) can be joined by a third adhesive layer (119). Furthermore, the column (118) can comprise a metal with high strength. The column (118) can prevent warping of the steam chamber (130) by contacting both ends of the steam chamber (130) and has the technical effect of protecting the electronic device (150) from external contaminants such as moisture and dust.

[0090] The implementation may include a post (118) disposed on a substrate (110), and a vapor chamber (130) may be disposed on the post (118) and the electronic device (150), and the vapor chamber (130) may be configured to contact the electronic device (150).

[0091] This embodiment has a special technical effect, namely, it can solve the technical contradiction problem of cracks or voids in the metal adhesive layer due to the difference in thermal expansion coefficient by controlling the thermal expansion coefficient of the third plate (138) of the steam chamber (130) in contact with the electronic device (150) and by effectively transferring the heat generated from the electronic device upward by using a metal adhesive layer including metal material as the first adhesive layer (140).

[0092] For example, the first adhesive layer (140) may include, but is not limited to, Sn alloy adhesive layer, In alloy adhesive layer, Al alloy adhesive layer, etc. For example, the first adhesive layer (140) may include, but is not limited to, SnxAgyCuz alloy adhesive layer, InxAgy alloy adhesive layer, etc.

[0093] Furthermore, according to the embodiment, when manufacturing the vapor chamber (130), a material is included that can reduce the difference in the coefficient of thermal expansion (CTE) at the surface in contact with the electronic device (150), and due to the reduction in the difference in the coefficient of thermal expansion, thermal deformation between the electronic device and the vapor chamber (130) caused by temperature changes can be minimized, so that reliability and heat dissipation efficiency can be significantly improved without delamination by using a metal-based adhesive layer with high hardness and high thermal conductivity, thereby providing composite technology effects.

[0094] Next, Figure 3 It shows in detail the basis Figure 2 A diagram of a vapor chamber (130) for a semiconductor packaging module according to an embodiment. (See reference...) Figure 3 The steam chamber (130) may include an upper metal plate (131), a hollow structure (132), and a lower metal plate (133). Figure 3 In the diagram, the hollow structure (132) is shown as empty, but may include multiple groove structures or multiple holes, and the multiple groove structures or multiple holes may be filled with other materials.

[0095] For example, a working fluid inlet can be formed on one side of the hollow structure (132), into which working fluid can be injected and which can be closed. The working fluid can be, but is not limited to, acetone, methanol, ethanol, or deionized water (DI-water).

[0096] According to one embodiment, when heat generated from the electronic device (150) is effectively transferred to the lower metal plate (133) through the first adhesive layer (140) which serves as a metal adhesive layer, the working fluid may evaporate, absorbing latent heat of vaporization, moving toward the upper metal plate (131), and condensing into a liquid while releasing latent heat of vaporization. The condensed working fluid can be absorbed into the hollow groove structure and move toward the lower metal plate (133).

[0097] In addition, in this embodiment, the lower metal plate (133) may include a first plate (136), a second plate (137) disposed on the first plate (136), and a third plate (138) disposed on the second plate (137). The second plate (137) may be inserted between the first plate (136) and the third plate (138).

[0098] The upper metal plate (131) and the lower metal plate (133) may comprise the same material. Furthermore, the first plate (136) and the third plate (138) may comprise the same material. The upper metal plate (131), the first plate (136), and the third plate (138) may comprise the same metallic material, such as copper (Cu), but are not limited thereto.

[0099] According to the implementation method, there is a combined technical effect, namely, the reliability can be further improved by rapidly dissipating the heat generated from the electronic device, thereby further improving the heat dissipation performance and preventing the warping of the vapor chamber in contact with the electronic device.

[0100] For example, such as Figure 3 As shown, the first thickness (T1) of the first plate (136) in the lower metal plate (133) can be greater than the third thickness (T3) of the third plate (138). In addition, the first thickness (T1) of the first plate (136) can be greater than the second thickness (T2) of the second plate (137).

[0101] In addition, the second plate (137) can be configured to be biased toward the upper region based on the horizontal center within the lower metal plate (133).

[0102] The second plate (137) can be positioned closer to the upper surface of the lower metal plate (133) rather than the lower surface of the lower metal plate. Therefore, this embodiment has the technical effect of further improving heat dissipation performance by rapidly dissipating the heat generated from the electronic device (150) due to the first plate (136) adjacent to the electronic device (150) being formed to be larger than the third plate (138).

[0103] Furthermore, based on the relatively large coefficient of thermal expansion of the second plate (137), the first thickness (T1) of the first plate (136) can be greater than the third thickness (T3) of the third plate (138), making the coefficient of thermal expansion of the metal material disposed on the upper side of the second plate (137) and the coefficient of thermal expansion of the metal material disposed below the second plate (137) symmetrical. Therefore, this embodiment has the following technical effect: the steam chamber (130) has a coefficient of thermal expansion of the upper and lower parts that are symmetrical about the second plate (137), thereby preventing the steam chamber from warping and preventing the peeling of the first adhesive layer, thereby further improving reliability.

[0104] Next, Figure 4 This is a diagram illustrating the vapor chamber of a semiconductor packaging module according to a second embodiment. (See reference) Figure 4 The lower metal plate (133) of the steam chamber (130) may include a first plate (136), a second plate (137) disposed on the first plate (136), and a third plate (138) disposed on the second plate (137). The second plate (137) may be inserted between the first plate (136) and the third plate (138).

[0105] Meanwhile, the steam chamber according to the second embodiment may also include a heat-conducting plug (139) located in the second plate (137), thereby providing a combined technical effect of improving heat dissipation performance and reliability.

[0106] For example, a heat-conducting plug (139) disposed within the second plate (137) can be configured to penetrate the second plate (137). The second plate (137) may include, but is not limited to, a mesh shape having an upper through hole and a lower through hole. Alternatively, the second plate (137) may include, but is not limited to, a heat-conducting plug (139) filling the upper through hole and the lower through hole.

[0107] The heat plug (139) may contact the upper surface of the first plate (136). Furthermore, the heat plug (139) may contact the lower surface of the third plate (138). Additionally, the heat plug (139) may include multiple horizontally spaced components within the second plate (137). The thickness of the heat plug (139) may be the same as the second thickness (T2) of the second plate (137).

[0108] The heat-conducting plug (139) filling the holes of the second plate (137) can be filled with a metallic material that has a higher thermal conductivity than the material of the second plate (137). For example, the heat-conducting plug (139) can be filled with the same material as the first plate (136) or the third plate (138), but is not limited thereto. For example, the heat-conducting plug (139) can be filled with copper (Cu). Therefore, heat generated from the electronic device can be effectively transferred from the first plate (136) to the third plate (138) through the second plate (137) and the heat-conducting plug (139). Therefore, there is a technical effect that can improve the heat conduction from the first plate (136) to the third plate (138), thereby further improving the heat dissipation performance.

[0109] Furthermore, according to the second embodiment, the second plate (137) of the steam chamber may include a composite material with a coefficient of thermal expansion higher than that of the electronic device, thereby minimizing the shape of the steam chamber (130) due to the reduction of the difference in coefficients of thermal expansion, thereby further improving reliability and heat dissipation performance.

[0110] Next, Figure 5 This is a diagram illustrating a semiconductor packaging module including a vapor chamber according to a third embodiment.

[0111] Figure 5 It can also include Figure 2 The second vapor chamber (180) and heat sink (190) in the semiconductor packaging module. Reference Figure 5 A second steam chamber (180) may be disposed on top of the steam chamber (130). The steam chamber (130) and the second steam chamber (180) may be joined by a second adhesive layer (170). Furthermore, the second steam chamber (180) may be larger than the horizontal width of the steam chamber (130). The second adhesive layer (170) may include, but is not limited to, a metallic adhesive layer.

[0112] Furthermore, a radiator (190) can be installed on the second steam chamber (180). Therefore, the third embodiment has the technical effect of improving heat dissipation performance by diffusing the heat transferred through the steam chamber (130) to a wider area.

[0113] The second steam chamber (180) may adopt the technical features of the steam chamber (130) described above. For example, the second steam chamber (180) may include a fourth plate, a fifth plate, and a sixth plate arranged in the vertical direction, and a hollow structure may be provided in the fifth plate. The fourth plate may be formed to be larger than the fifth and sixth plates, but is not limited thereto.

[0114] Figures 6A to 6C These are graphs showing the package temperature, CPU chip operating frequency, and processor power consumption over time for the embodiment (E) and comparative example (R), respectively.

[0115] The implementation (E) and comparative example (R) can be, for example, a CPU chip, but are not limited thereto. Figures 6A to 6B The CPU chip in embodiment (E) may include a semiconductor packaging module, the semiconductor packaging module including, according to Figures 2 to 5 The steam chamber of the implementation method.

[0116] When the application implementation method (E) has the following: Figures 2 to 5 When a CPU chip in a semiconductor packaged module with a vapor chamber is used in an embodiment of the present invention, the heat dissipation performance can be as follows: Figure 6A The significant improvement shown allows the semiconductor chip temperature to remain low, and even when the temperature is raised during operation, it exhibits a rapid drop to a lower temperature.

[0117] Specifically, when the CPU chip is driven, the package temperature rises rapidly due to the heat generated by the CPU chip. Subsequently, when the CPU chip stops being driven, the temperature of the semiconductor package module decreases, and when the CPU chip is driven again, it reaches its peak temperature again.

[0118] At the same time, refer to Figure 6A In embodiment (E), it can be confirmed that when the CPU chip stops driving due to the use of a semiconductor packaging module including a vapor chamber according to the embodiment, the temperature decreases faster than in comparative example (R). Furthermore, although embodiment (E) and comparative example (R) reach the same temperature when the CPU chip is driven, embodiment (E) has a special technical effect, namely, due to... Figure 6B and Figure 6C The highly efficient heat dissipation shown can achieve higher performance and efficiency by expressing higher clock frequencies and power consumption, while maintaining the same drive temperature.

[0119] Furthermore, according to this embodiment, a more efficient heat dissipation structure in contact with the semiconductor can have a significant impact on heat dissipation, and it can provide the same level of final heat dissipation performance even if the size or performance of the heat dissipation structure of the subsequent structure is small or low, thereby also having the effect of reducing the total cost.

[0120] Specifically, refer to Figure 6B When the CPU chip is driven, its temperature increases with the driving time. Therefore, in order to prevent the chip from being damaged by further temperature increases, there is a frequency reduction function that forcibly reduces the clock frequency of the CPU chip.

[0121] For example, in the case of Comparative Example (R), due to low heat dissipation efficiency, the clock frequency of the CPU chip is reduced to extend its lifespan. Furthermore, in this case, the clock frequency is significantly reduced in Comparative Example (R), resulting in a substantial decrease in CPU chip performance.

[0122] On the other hand, in the case of implementation (E), when the semiconductor packaging module including the vapor chamber according to the implementation is applied, the heat dissipation performance can be significantly improved. Therefore, compared with the comparative example (R), the clock frequency is reduced by almost zero or very little, and thus there is a special technical effect that can maximize the performance of the CPU chip.

[0123] Additionally, refer to Figure 6C When the CPU chip is running, as the temperature of the CPU chip increases over time, the power consumption is forcibly reduced to suppress the temperature increase.

[0124] For example, in the case of Comparative Example (R), due to the low heat dissipation efficiency, the power of the CPU chip is reduced to extend the life of the CPU chip, and in Comparative Example (R), the processor power is reduced significantly, so the performance of the CPU chip is significantly reduced.

[0125] On the other hand, implementation method (E) has a special technical effect that can maintain the high performance of the CPU chip, because when applied to a semiconductor packaging module including a vapor chamber, the heat dissipation performance can be significantly improved, and the power consumption over time can be much lower than that of the comparative example (R).

[0126] Although the above description has been made with reference to embodiments of the invention, those skilled in the art will readily understand that various modifications and alterations can be made to the invention without departing from the spirit and scope of the invention as described in the appended claims.

[0127] [Explanation of reference numerals in the attached figures]

[0128] 60: Metal plate; 70, 170: Second adhesive layer

[0129] 80, 180: Steam chamber; 90, 190: Radiator

[0130] 110: Base plate 118: Column

[0131] 119: Third adhesive layer; 130: Steam chamber

[0132] 131: Upper metal plate; 132: Hollow structure

[0133] 133: Lower metal plate 136: First plate

[0134] 137: Second board 138: Third board

[0135] 139: Hole; 140: Adhesive layer

[0136] 150: Electronic components; 155: Connecting parts

[0137] E: Example R: Comparison Example

Claims

1. A vapor chamber for a semiconductor packaging module, the vapor chamber comprising: The lower metal plate, hollow structure, and upper metal plate are arranged in sequence. The lower metal plate includes: The first, second, and third boards are set in sequence. The coefficient of thermal expansion of the second plate is less than that of the first plate or the third plate.

2. The steam chamber according to claim 1, wherein, The thickness of the first plate is greater than the thickness of the third plate.

3. The steam chamber according to claim 2, wherein, The second plate is positioned closer to the upper surface of the lower metal plate than to the lower surface of the lower metal plate.

4. The steam chamber according to claim 1, wherein, The lower metal plate also includes a heat-conducting plug within the second plate.

5. The steam chamber according to claim 4, wherein, The heat plug has a higher thermal conductivity than the second plate, and The heat plug has a lower coefficient of thermal expansion than the second plate.

6. A semiconductor packaging module, the semiconductor packaging module comprising a vapor chamber, the semiconductor packaging module comprising: substrate; Electronic device, the electronic device being disposed on the substrate; as well as A steam chamber, wherein the steam chamber is disposed on the electronic device; The steam chamber includes the steam chamber according to any one of claims 1 to 5.

7. The semiconductor packaging module according to claim 6, further comprising a first adhesive layer disposed between the electronic device and the vapor chamber, and in, The first adhesive layer comprises a metallic material.

8. The semiconductor packaging module according to claim 6, wherein, The coefficient of thermal expansion of the second plate is greater than or equal to the coefficient of thermal expansion of the electronic device.

9. The semiconductor packaging module according to claim 6, wherein, The thickness of the first plate is greater than the thickness of the third plate, and The second plate is configured to be adjacent to the upper surface of the lower metal plate, rather than the lower surface.

10. The semiconductor packaging module according to claim 6, wherein, The second plate includes plates with a coefficient of thermal expansion of... to Metallic or ceramic materials within the specified range.

11. The semiconductor packaging module according to claim 6, wherein, The lower metal plate also includes a heat-conducting plug located within the second plate. The heat plug has a higher thermal conductivity than the second plate, and The heat plug has a lower coefficient of thermal expansion than the second plate.

12. A semiconductor packaging module, the semiconductor packaging module comprising a vapor chamber, the semiconductor packaging module comprising: substrate; Electronic device, the electronic device being disposed on the substrate; The steam chamber according to claim 1, wherein the steam chamber is disposed on the electronic device; and A first adhesive layer is disposed between the electronic device and the vapor chamber. The thickness of the first plate is greater than the thickness of the third plate.

13. The semiconductor packaging module according to claim 12, further comprising a first adhesive layer disposed between the electronic device and the vapor chamber. in, The first adhesive layer comprises a metallic material, and The coefficient of thermal expansion of the second plate is less than that of the first plate and the third plate.

14. The semiconductor packaging module according to claim 12, wherein, The lower metal plate also includes a heat-conducting plug located within the second plate. The heat plug has a higher thermal conductivity than the second plate, and The heat plug has a lower coefficient of thermal expansion than the second plate.

15. A power conversion device comprising a semiconductor package module according to any one of claims 6 to 14.

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