Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

Abstract

The present invention reduces stress in a semiconductor package in which a chip is connected to a substrate by wire bonding. The semiconductor package includes a substrate, a semiconductor chip, a sealing material, an adhesive layer, and a transparent member. In the semiconductor package, the semiconductor chip is electrically connected to the substrate by wires. The sealing material seals the wires. Furthermore, in the semiconductor package, the thickness of the adhesive layer is not less than 1 / 10 of the thickness of the substrate. Furthermore, the transparent member is bonded to the sealing material by the adhesive layer.

Description

Technical Field

[0001] This technology relates to semiconductor packaging. Specifically, this technology relates to semiconductor packages, semiconductor devices, and methods for manufacturing semiconductor packages, which are connected by wire bonding. Background Technology

[0002] Traditionally, wire bonding has been widely used to connect semiconductor substrates and semiconductor chips due to its low cost and high degree of flexibility. For example, a manufacturing method has been proposed that includes molding a sealing resin for sealing each lead of a large number of wire bonded chips, bonding the sealing resin to glass, and then singulating it (see, for example, Patent Document 1).

[0003] Reference List

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2003-332542 Summary of the Invention

[0006] The problem to be solved by the present invention

[0007] In the aforementioned conventional technology, a large number of chips are molded together with a sealing resin and then monolithically packaged, thereby facilitating the mass production of semiconductor packages. However, in this conventional technology, stress may be generated in the component due to the mismatch in the coefficients of linear expansion between the substrate and each of the chips and glass. This stress may cause the glass to peel off from the sealing material, or the sealing material or glass may crack.

[0008] In view of this situation, this technology was developed, and the purpose of this technology is to alleviate stress in semiconductor packages formed by connecting chips to substrates via wire bonding.

[0009] Solution to the problem

[0010] This technology was developed to address the aforementioned problems, and a first aspect of this technology is a semiconductor package and a method for manufacturing the semiconductor package, the semiconductor package comprising: a substrate; a semiconductor chip electrically connected to the substrate via leads; a sealing material sealing the leads; an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate; and a transparent member bonded to the sealing material via the adhesive layer. This provides a stress-relieving effect.

[0011] Furthermore, in the first aspect, the adhesive layer can be black. This results in the suppression of flares.

[0012] Furthermore, in the first aspect, the adhesive layer can be made of epoxy resin. This provides an effect of suppressing warpage.

[0013] Furthermore, in the first aspect, the adhesive layer can be made of silicone resin. This results in the suppression of clouding and dew condensation.

[0014] Furthermore, in the first aspect, the adhesive layer can comprise a variety of resins with different properties. This results in an effect that can achieve a variety of results.

[0015] Furthermore, in the first aspect, the adhesive layer may comprise epoxy resin and silicone resin. This results in the ability to suppress both warping and fogging / whitening and condensation.

[0016] Furthermore, in the first aspect, the semiconductor chip may include a first semiconductor chip and a second semiconductor chip. This results in a reduction in manufacturing processes.

[0017] Furthermore, in the first aspect, the thickness of the adhesive layer can be no less than 30 micrometers. This provides a stress-relieving effect.

[0018] Furthermore, in the first aspect, the thickness of the adhesive layer can be no more than 400 micrometers. This reduces the risk of watermarking.

[0019] Furthermore, in the first aspect, a portion of the adhesive layer may protrude inward beyond the inner wall of the sealing material. This results in the suppression of flare.

[0020] Furthermore, in the first aspect, the bonding surface between the adhesive layer and the transparent member can have dimensions in a predetermined direction parallel to the substrate ranging from 100 micrometers to 1000 micrometers. This ensures airtightness.

[0021] Furthermore, in the first aspect, the elastic modulus of the adhesive layer can be lower than that of the sealing material. This results in stress relief.

[0022] Furthermore, in the first aspect, the elastic modulus of the adhesive layer can be a value not exceeding 3 gigapascals. This results in stress relief.

[0023] Furthermore, in the first aspect, the distance between the semiconductor chip and the transparent component can be in the range of 30 micrometers to 300 micrometers. This results in the suppression of flares.

[0024] Furthermore, a second aspect of this technology is a semiconductor device comprising: a semiconductor package including: a substrate; a semiconductor chip electrically connected to the substrate via leads; a sealing material sealing the leads; an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate; a transparent member bonded to the sealing material via the adhesive layer; and a lens assembly configured to converge an incident light beam and guide the incident light beam to the semiconductor chip. This provides a stress-relieving effect. Attached Figure Description

[0025] Figure 1 This is a block diagram illustrating an example configuration of a semiconductor device according to a first embodiment of the present technology.

[0026] Figure 2 These are cross-sectional and top views illustrating an example configuration of a semiconductor package according to a first embodiment of the present technology.

[0027] Figure 3 This is a top view of a semiconductor package using silicone resin according to a first embodiment of the present technology.

[0028] Figure 4 This is a diagram illustrating a method for manufacturing a semiconductor package according to a first embodiment of the present technology, up to the point where the film is peeled off.

[0029] Figure 5 This is a diagram illustrating a method for manufacturing a semiconductor package according to a first embodiment of the present technology up to the formation of external connection terminals.

[0030] Figure 6 This is a flowchart illustrating an example of a method for manufacturing a semiconductor package according to a first embodiment of the present technology.

[0031] Figure 7 This is a diagram illustrating an example of the relationship between the thickness of the adhesive layer and the amount of insertion according to a first embodiment of the present technology.

[0032] Figure 8 This is a cross-sectional view illustrating an example configuration of a semiconductor package according to a second embodiment of the present technology.

[0033] Figure 9 These are cross-sectional and top views illustrating an example configuration of a semiconductor package according to a third embodiment of the present technology.

[0034] Figure 10 This is a diagram illustrating an example of the properties of a resin for an adhesive layer according to a third embodiment of the present technology.

[0035] Figure 11 This is a cross-sectional view illustrating an example configuration of a semiconductor package according to a fourth embodiment of the present technology.

[0036] Figure 12 This is a block diagram illustrating an example of a schematic configuration of a vehicle control system.

[0037] Figure 13 This is an explanatory diagram showing an example of the mounting positions of the vehicle exterior information detection unit and the imaging unit. Detailed Implementation

[0038] The following describes the methods used to implement this technology (hereinafter referred to as embodiments). The descriptions will be given in the following order.

[0039] 1. First embodiment (i.e., an example in which the thickness of the adhesive layer is set to be more than 1 / 10 of the thickness of the substrate)

[0040] 2. Second embodiment (i.e., an example in which the thickness of the black adhesive layer is set to be more than 1 / 10 of the thickness of the substrate)

[0041] 3. Third embodiment (i.e., an example in which the thickness of the adhesive layer comprising multiple resins is set to be more than 1 / 10 of the thickness of the substrate)

[0042] 4. Fourth embodiment (i.e., an example in which the thickness of the adhesive layer is set to be more than 1 / 10 of the thickness of the substrate and multiple chips are sealed)

[0043] 5. Examples of application to moving bodies

[0044] <1. First Embodiment>

[0045] [Semiconductor device configuration example]

[0046] Figure 1 This is a block diagram illustrating a configuration example of a semiconductor device 100 according to a first embodiment of the present technology. The semiconductor device 100 is a means for capturing image data and includes a lens group 110, a sensor chip 230, and a digital signal processing (DSP) circuit 120. The semiconductor device 100 also includes a display unit 130, an operation unit 140, a bus 150, a frame memory 160, a storage unit 170, and a power supply unit 180. As the semiconductor device 100, it is assumed that a smartphone is equipped with a camera, a vehicle camera, etc.

[0047] Lens assembly 110 is adapted to converge the incident light beam and guide it to sensor chip 230. Sensor chip 230 functions as a solid-state imaging element and generates image data through photoelectric conversion. Sensor chip 230 supplies the generated image data to DSP circuit 120 via signal line 239.

[0048] The DSP circuit 120 performs predetermined signal processing on the image data. The DSP circuit 120 outputs the processed image data to the frame memory 160, etc., via the bus 150.

[0049] Display unit 130 displays image data. Display unit 130 may be, for example, a liquid crystal panel or an organic electroluminescent (EL) panel. Operation unit 140 generates operation signals based on user input.

[0050] Bus 150 is the common path for sensor chip 230, DSP circuit 120, display unit 130, operation unit 140, frame memory 160, storage unit 170 and power supply unit 180 to exchange data with each other.

[0051] The frame memory 160 holds image data. The storage unit 170 stores various data such as image data. The power supply unit 180 supplies power to the sensor chip 230, DSP circuit 120, display unit 130, etc.

[0052] In having Figure 1 In the semiconductor device 100 configured as exemplarily shown, the sensor chip 230 is arranged in a semiconductor package described later.

[0053] [Semiconductor package configuration example]

[0054] Figure 2 These are cross-sectional and top views illustrating a configuration example of a semiconductor package 200 according to a first embodiment of the present technology. Figure 2 The symbol 'a' illustrates an example of a cross-sectional view of a semiconductor package 200, and Figure 2 The symbol 'b' shows an example of a top view of a semiconductor package 200.

[0055] like Figure 2 As exemplarily shown in a, the semiconductor package 200 includes a transparent member 210, a sensor chip 230, and an organic substrate 250. In the following text, the direction toward the lens assembly 110 (not shown) should be assumed to be the "upward" direction.

[0056] Furthermore, the axis perpendicular to the substrate plane of the organic substrate 250 (i.e., the optical axis) should be assumed to be the "Z-axis". The predetermined direction parallel to the substrate plane should be assumed to be the "X-axis", and the axis perpendicular to the X-axis and Z-axis should be assumed to be the "Y-axis". Figure 2 The symbol 'a' indicates a cross-sectional view viewed from the Y-axis direction.

[0057] The area of ​​the organic substrate 250 is larger than the area of ​​the sensor chip 230, and the sensor chip 230 is bonded to a predetermined area on the upper surface of the organic substrate 250. Furthermore, a predetermined number of pads 251 are arranged around the predetermined area. A predetermined number of external connection terminals 262 (such as solder balls) are arranged on the lower surface of the organic substrate 250. Note that the organic substrate 250 is an example of the substrate described in the claims.

[0058] The sensor chip 230 serves as a solid-state imaging element and generates image data through photoelectric conversion. A predetermined number of pads 233 are arranged around a predetermined light-receiving region 231 on the chip surface of the sensor chip 230. These pads 233 are electrically connected to pads 251 on the substrate side via leads 261.

[0059] Sealing material 240 is adapted to seal lead 261. As a material for sealing material 240, epoxy resin is used, for example. For example, sealing material 240 is formed in the region between the outer periphery of the organic substrate 250 and the outer periphery of the light-receiving region 231 on the respective upper surfaces of the organic substrate 250 and the sensor chip 230.

[0060] The adhesive layer 220 is adapted to bond the sealing material 240 and the transparent member 210 together. The dimension (i.e., thickness) dZ1 of the adhesive layer 220 in the Z-axis direction is more than 1 / 10 of the thickness dZ3 of the organic substrate 250. By setting the thickness of the adhesive layer 220 to more than 1 / 10 of the thickness of the organic substrate 250, the stress caused by the mismatch of the linear expansion coefficients between the organic substrate 250 and each of the sensor chip 230 and the transparent member 210 can be sufficiently alleviated. Furthermore, even when the flatness of the upper surface of the sealing material 240 is low, it can be easily bonded to the transparent member 210.

[0061] Furthermore, the thickness (dZ1) of the adhesive layer 220 is preferably 30 micrometers (μm) or more. Furthermore, dZ1 is preferably 400 micrometers (μm) or less. Moreover, the optimal value of dZ1 is in the range of 100 micrometers (μm) to 200 micrometers (μm).

[0062] Furthermore, the space surrounded by the sensor chip 230, sealing material 240, adhesive layer 220, and transparent component 210 is called a cavity.

[0063] Furthermore, a portion of the adhesive layer 220 (specifically, the lower portion) preferably protrudes inward beyond the inner wall of the sealing material 240. In other words, a portion of the adhesive layer 220 protrudes into the cavity. Figure 2In the diagram, X1 represents the X-coordinate of the inner wall of the sealing material 240, and the portion indicated by the arrow protrudes inward beyond X1. With this shape, when a beam of light passes through the adhesive layer 220, it is less likely to reach the light-receiving area 231, and thus flare can be suppressed.

[0064] Furthermore, dX represents the dimension (i.e., width) of the bonding surface between the adhesive layer 220 and the transparent member 210 in the X-axis direction, which is preferably a value in the range of 100 micrometers (μm) to 1000 micrometers (μm). The same applies to the Y-axis direction. Therefore, airtightness can be ensured.

[0065] Furthermore, the elastic modulus of the adhesive layer 220 is lower than that of the sealing material 240, and is preferably, for example, below 3 gigapascals (GPa). This property helps to alleviate stress caused by the mismatch in the coefficients of linear expansion.

[0066] Furthermore, dZ2 represents the distance from the chip surface (i.e., the upper surface) of the sensor chip 230 to the lower surface of the transparent member 210, which is preferably in the range of 30 micrometers (μm) to 300 micrometers (μm) from the perspective of suppressing flares.

[0067] The transparent member 210 is adapted to protect the upper surface of the sensor chip 230, and glass or the like is used in the transparent member 210.

[0068] like Figure 2 As exemplarily shown in b, pixels 232 are arranged in a two-dimensional lattice pattern in the light-receiving region 231. Furthermore, when viewed in the Z-axis direction, the sealing material 240 has a frame shape.

[0069] As a material for the adhesive layer 220 having the above-described properties, epoxy resin may be used, for example. Note that the material of the adhesive layer 220 is not limited to epoxy resin.

[0070] like Figure 3 As exemplarily shown, silicone resin can also be used as the material for adhesive layer 220. Alternatively, other resins such as acrylic resin can be used for adhesive layer 220.

[0071] [Methods for manufacturing semiconductor packages]

[0072] Next, we will refer to Figures 4 to 6 Describes a method for manufacturing a semiconductor package 200.

[0073] First, such as Figure 4 As exemplarily shown in a, the sensor chip 230 is bonded to the substrate plane of the organic substrate 250. That is, die bonding is performed.

[0074] Then, as Figure 4 As exemplarily shown in b, for the purpose of protecting the light-receiving region 231, a film 310 with an adhesive 311 coated on its underside is attached to the light-receiving region 231. Then, as... Figure 4 As exemplarily shown in Figure c, the sensor chip 230 and the organic substrate 250 are electrically connected by wire bonding.

[0075] Then, as Figure 4 As exemplarily shown in d, the sealing material 240 is formed using mold 320. Then, as... Figure 4 As exemplarily shown in e, the membrane 310 is peeled off.

[0076] Next, as Figure 5 As exemplarily shown in section a, the upper surface of sensor chip 230 is cleaned. Then, as... Figure 5 As exemplarily shown in b, resin for forming adhesive layer 220 is applied to the upper surface of sealant 240. The height of adhesive layer 220 relative to sealant 240 at this time is referred to as dZ0.

[0077] Then, as Figure 5 As exemplarily shown in Figure c, the transparent member 210 is bonded to the sealing material 240 via the adhesive layer 220. During bonding, the transparent member 210 is pushed in from above, and the thickness of the adhesive layer after pushing becomes dZ1. The difference between dZ0 and dZ1 is referred to as the "push-in amount".

[0078] Then, as Figure 5 As shown in d, a predetermined number of external connection terminals 262 are formed on the organic substrate 250. Note that... Figure 5 Step d is actually executed upside down.

[0079] In this paper, in the gapped ball grid array (iBGA) with a common automotive structure, the leads are not sealed, but rather ribs are formed around the leads, such that the transparent member 210 is supported by the ribs. In such a structure, the size of the sensor chip 230 increases accordingly due to the need to increase the rib width, potentially reducing the theoretical yield. In contrast, in the aforementioned structure where the leads are sealed with sealing material 240, since it is possible to... Figure 4 The sealing material 240 is molded as exemplarily shown in d, so the sealing material 240 can be molded together for multiple chips, thereby increasing the theoretical yield.

[0080] Figure 6This is a flowchart illustrating an example of a method for manufacturing a semiconductor package 200 according to a first embodiment of the present technology. First, die bonding is performed (step S901), and a film 310 is attached to a light-receiving region 231 (step S902). Then, wire bonding is performed (step S903), and a sealing material 240 is formed (step S904). Then, the film 310 is peeled off (step S905).

[0081] Next, the upper surface of the sensor chip 230 is cleaned (step S906), and resin for forming the adhesive layer 220 is applied to the upper surface of the sealing material 240 (step S907). Then, the transparent member 210 is bonded to the sealing material 240 via the adhesive layer 220 (step S908), and a predetermined number of external connection terminals 262 are formed on the organic substrate 250 (step S909). After step S909, various steps such as dicing are performed, and the process of manufacturing the semiconductor package 200 is completed.

[0082] Figure 7 This is a diagram illustrating an example of the relationship between the thickness of the adhesive layer and the amount of insertion according to a first embodiment of the present technology. Figure 7 The vertical axis represents the thickness of the adhesive layer 220 after it has been pushed down, and Figure 7 The horizontal axis represents the amount of material pushed in. Figure 7 The shape "I" in the diagram represents the range from the minimum to the maximum thickness achievable with the corresponding insertion amount. A hollow circle indicates the median thickness. The gray area indicates a 50% thickness distribution.

[0083] like Figure 7 As exemplarily illustrated, the greater the push-in depth, the smaller the achievable thickness. Assembly becomes possible when the thickness is above 60 micrometers (μm). Furthermore, the thickness range of 100 to 200 micrometers (μm) enclosed by the dashed line is the optimal range with less stress-induced wrinkling. Note that thicknesses above 250 micrometers (μm) are not preferred due to the increased risk of watermarking.

[0084] As described above, according to the first embodiment of the present technology, since the sealing material 240 and the transparent member 210 are bonded together via an adhesive layer 220 with a thickness of more than 1 / 10 of the thickness of the organic substrate 250, the stress caused by the mismatch of the linear expansion coefficients can be sufficiently relieved.

[0085] <2. Second Embodiment>

[0086] In the first embodiment described above, the sealing material 240 and the transparent member 210 are bonded together via the adhesive layer 220. However, due to light beams passing through the adhesive layer 220 and light beams reflected inside the adhesive layer 220, there is a possibility of flare. The semiconductor package 200 according to the second embodiment differs from the first embodiment in that the adhesive layer 220 is black.

[0087] Figure 8 This is a cross-sectional view showing an example configuration of a semiconductor package 200 according to a second embodiment of the present technology. The semiconductor package 200 of the second embodiment differs from that of the first embodiment in that a black adhesive layer 225 is provided instead of an adhesive layer 220. For example, the adhesive layer 225 can be blackened by adding carbon black. Therefore, flare caused by light beams or the like passing through the adhesive layer 225 can be suppressed.

[0088] As described above, according to the second embodiment of the present technology, since the adhesive layer 225 is black, flare caused by light beams passing through the adhesive layer 220 can be suppressed.

[0089] <3. Third Embodiment>

[0090] In the first embodiment described above, a resin of a certain type, such as epoxy resin or silicone resin, is used as the material for the adhesive layer 220. However, with such a configuration, it may be difficult to meet various conditions related to elastic modulus and moisture permeability. The semiconductor package 200 according to the third embodiment differs from the first embodiment in that the adhesive layer 220 comprises a variety of resins with different properties.

[0091] Figure 9 These are cross-sectional and top views illustrating a configuration example of a semiconductor package 200 according to a third embodiment of the present technology. Figure 9 The symbol 'a' illustrates an example of a cross-sectional view of a semiconductor package 200, and Figure 9 The symbol 'b' shows an example of a top view of a semiconductor package 200.

[0092] like Figure 9 As exemplarily shown in a and b, the adhesive layer 220 in the third embodiment comprises epoxy resin 221 and silicone resin 222. Figure 9 As exemplarily shown in b, epoxy resin 221 is applied to a portion of the coating area of ​​the adhesive layer 220 on the upper surface of the frame-shaped sealant 240, and silicone resin 222 is applied to the remainder of that area.

[0093] Figure 10 This is a diagram illustrating an example of the properties of a resin for adhesive layer 220 according to a third embodiment of the present technology.

[0094] For example, the resin of model TB1234b is a silicone resin with an elastic modulus of 0.01 gigapascals (GPa) and a moisture permeability of 700 ppm (parts per million). When such a resin is used for the adhesive layer 220, the semiconductor package 200 is less likely to become foggy or white and is less likely to condense.

[0095] Furthermore, the resin of model SA2252 is an epoxy resin with an elastic modulus of 4.8 gigapascals (GPa) and a moisture permeability of 250 ppm. When such a resin is used for the adhesive layer 220, the semiconductor package 200 is likely to become foggy and whitish, and condensation is also likely to occur.

[0096] The resin of model 16A042-AA1 is an epoxy resin with an elastic modulus of 2.5 gigapascals (Gpa) and a moisture permeability of 300 ppm. When such a resin is used for the adhesive layer 220, the semiconductor package 200 is unlikely to become fogged or white, although the likelihood is not as high as that of model TB1234b; and condensation is likely to occur.

[0097] like Figure 10 As exemplarily illustrated, because silicone resins tend to have a low modulus of elasticity, wrinkles are reduced due to stress relief, and therefore the semiconductor package 200 is less likely to become fogged or whitened. Furthermore, because silicone resins tend to have high moisture permeability, condensation is less likely to occur.

[0098] Meanwhile, because epoxy resin tends to have a high elastic modulus, the semiconductor package 200 is likely to become fogged and white. Furthermore, because epoxy resin tends to have low moisture permeability, condensation is likely to occur. However, because epoxy resin tends to have a high elastic modulus, warping of the sensor chip 230 can be suppressed.

[0099] By using both epoxy resin and silicone resin with the above characteristics in mind, warping, fogging, whitening, and condensation can be suppressed.

[0100] Note that the second embodiment can be applied to the third embodiment. In this case, both epoxy resin 221 and silicone resin 222 are colored black. Furthermore, if desired, the adhesive layer 220 may contain three or more resins.

[0101] As described above, according to the third embodiment of the present technology, since the adhesive layer 220 comprises epoxy resin 221 and silicone resin 222, warping, fogging, whitening, and condensation can be suppressed.

[0102] <4. Fourth Embodiment>

[0103] In the first embodiment described above, a sensor chip 230 is encapsulated in a semiconductor package 200; however, this disclosure is not limited to this configuration. The semiconductor package 200 according to the fourth embodiment differs from that of the first embodiment in that multiple sensor chips are encapsulated in the semiconductor package 200.

[0104] Figure 11 This is a cross-sectional view illustrating a configuration example of a semiconductor package 200 according to a fourth embodiment of the present technology. The semiconductor package 200 according to the fourth embodiment differs from that of the first embodiment in that, in addition to the sensor chip 230, a sensor chip 270 is also sealed. Note that sensor chips 230 and 270 are examples of the first and second semiconductor chips described in the claims.

[0105] Sensor chips 230 and 270 are connected to the organic substrate 250 via wire bonding, and a transparent member 210 covering such chips is bonded to the sealing material 240 via an adhesive layer 220. As described above, by simultaneously sealing sensor chips 230 and 270 in the semiconductor package 200, the manufacturing process can be reduced compared to sealing the sensor chips separately. Furthermore, by placing two sensor chips in the device, the size of the semiconductor device 100 can be reduced compared to the first embodiment.

[0106] Note that the second and third embodiments can be applied to the fourth embodiment. Furthermore, three or more chips can be simultaneously sealed in the semiconductor package 200.

[0107] As described above, according to the fourth embodiment of the present technology, since the sensor chips 230 and 270 are sealed in the semiconductor package 200, the manufacturing process can be reduced.

[0108] <5. Examples of application to moving bodies>

[0109] The technology disclosed herein (i.e., the technology itself) can be applied to a variety of products. For example, the technology disclosed herein can be implemented as a device mounted on any type of mobile body, such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.

[0110] Figure 12 This is a block diagram illustrating a schematic configuration example of a vehicle control system, which is an example of a mobile body control system to which the technology according to this disclosure can be applied.

[0111] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 12In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. Furthermore, as part of the functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0112] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 is used as a control device for the following: a drive force generating device (such as an internal combustion engine, drive motor, etc.) for generating vehicle driving force, a drive force transmission mechanism for transmitting driving force to the wheels, a steering mechanism for adjusting the vehicle's steering angle, and a braking device for generating vehicle braking force.

[0113] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 serves as a control device for: keyless entry systems, smart key systems, power windows, or various lights such as headlights, backup lamps, brake lights, turn signals, fog lights, etc. In this case, radio waves or signals from various switches, which are sent from a moving device as a substitute for a key, can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals and controls the vehicle's door locking devices, power windows, lights, etc.

[0114] The exterior information detection unit 12030 detects information about the exterior of the vehicle, including the vehicle control system 12000. For example, the exterior information detection unit 12030 is connected to the imaging unit 12031. The exterior information detection unit 12030 causes the imaging unit 12031 to image an image of the exterior of the vehicle and receives the image. Based on the received image, the exterior information detection unit 12030 can perform processing such as detecting objects like people, vehicles, obstacles, signs, and text on the road surface, or detecting their distance.

[0115] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as information about the measured distance. Furthermore, the light received by the imaging unit 12031 can be visible light or invisible light, such as infrared light.

[0116] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected, for example, to a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that images the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's level of concentration, or it can determine whether the driver is dozing off.

[0117] The microcomputer 12051 can calculate control target values ​​for the drive force generating device, steering mechanism, or braking device based on information about the vehicle's interior or exterior obtained by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control designed to realize advanced driver assistance system (ADAS) functions, including collision avoidance or impact mitigation, following distance-based driving, vehicle speed maintenance, vehicle collision warning, and lane departure warning.

[0118] In addition, the microcomputer 12051 can perform cooperative control aimed at autonomous driving by controlling the drive force generating device, steering mechanism, braking device, etc., based on information about the inside or outside of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040. This autonomous driving enables the vehicle to drive automatically without relying on the driver's operation.

[0119] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on information about the exterior of the vehicle obtained by the exterior information detection unit 12030. For example, by controlling the headlights to switch from high beams to low beams based on the position of the preceding or oncoming vehicle detected by the exterior information detection unit 12030, the microcomputer 12051 can perform cooperative control aimed at preventing glare.

[0120] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or audibly notifying the occupants of the vehicle or the outside of the vehicle of information. Figure 12 In the example, an audio speaker 12061, a display unit 12062, and a dashboard 12063 are exemplarily shown as output devices. The display unit 12062 may include, for example, at least one of an in-vehicle display and a head-up display.

[0121] Figure 13 This is a diagram showing an example of the mounting position of the imaging unit 12031.

[0122] exist Figure 13 The imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104 and 12105.

[0123] Imaging units 12101, 12102, 12103, 12104, and 12105 are, for example, arranged on the front nose, side mirrors, rear bumper, and rear door of vehicle 12100, as well as on the upper part of the windshield inside the vehicle. Imaging unit 12101 on the front nose and imaging unit 12105 on the upper part of the windshield inside the vehicle primarily acquire images of the front of vehicle 12100. Imaging units 12102 and 12103 on the side mirrors primarily acquire images of the sides of vehicle 12100. Imaging unit 12104 on the rear bumper or rear door primarily acquires images of the rear of vehicle 12100. Imaging unit 12105 on the upper part of the windshield inside the vehicle is mainly used to detect oncoming vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0124] Notice, Figure 13 Examples of the imaging ranges of imaging units 12101 to 12104 are shown. Imaging range 12111 represents the imaging range of imaging unit 12101 installed at the front nose. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103 installed at the side mirrors, respectively. Imaging range 12114 represents the imaging range of imaging unit 12104 installed at the rear bumper or rear door. For example, a bird's-eye view of the vehicle 12100 viewed from above is obtained by overlaying image data captured by imaging units 12101 to 12104.

[0125] At least one of the imaging units 12101 to 12104 may have the function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0126] For example, the microcomputer 12051 can determine the distance to each three-dimensional object within the imaging range 12111 to 12114 and the time variation of that distance (relative speed to the vehicle 12100) based on distance information obtained from the imaging units 12101 to 12104, and thereby extract the nearest three-dimensional object, in particular, that exists on the driving path of the vehicle 12100 and is traveling at a predetermined speed (e.g., equal to or greater than 0 km / h) in substantially the same direction as the vehicle 12100, as the leading vehicle. Furthermore, the microcomputer 12051 can preset a following distance to be maintained in front of the leading vehicle and execute automatic braking control (including follow-stop control), automatic acceleration control (including follow-start control), etc. Therefore, cooperative control aimed at autonomous driving can be performed, which allows the vehicle to drive automatically without relying on driver operation, etc.

[0127] For example, microcomputer 12051 can classify three-dimensional object data about three-dimensional objects into three-dimensional object data of two-wheeled vehicles, standard-sized vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from imaging units 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that the driver of vehicle 12100 can visually recognize and obstacles that the driver of vehicle 12100 cannot visually recognize. Then, microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle. If the collision risk is equal to or higher than a set value and therefore there is a possibility of collision, microcomputer 12051 outputs a warning to the driver via audio speaker 12061 or display unit 12062, and performs forced deceleration or evasive steering via drive system control unit 12010. Microcomputer 12051 can thereby assist driving to avoid collisions.

[0128] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. The microcomputer 12051 may identify a pedestrian, for example, by determining whether a pedestrian exists in the image captured by the imaging units 12101 to 12104. This pedestrian identification is performed, for example, by extracting feature points from the image captured by the imaging units 12101 to 12104 (which are infrared cameras) and by performing pattern matching processing on a series of feature points representing the outline of an object to determine whether it is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the image captured by the imaging units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to display a square outline for emphasis, superimposed on the identified pedestrian. The sound / image output unit 12052 may also control the display unit 12062 to display an icon or similar representing the pedestrian at a desired location.

[0129] Examples of vehicle control systems to which the technology according to this disclosure can be applied have been described above. The technology according to this disclosure can be applied to the imaging unit 12031 in the above configuration. Specifically, Figure 1 The semiconductor device 100 can be applied to the imaging unit 12031. By applying the technology according to this disclosure to the imaging unit 12031, stress can be relieved, and thus haze whitening can be suppressed.

[0130] Note that the above embodiments illustrate examples of this technology, and the matters in the embodiments correspond to the matters defining the invention in the claims. Similarly, the corresponding matters defining the invention in the claims correspond to the corresponding matters with the same names in the embodiments of this technology. However, this technology is not limited to the embodiments, and various modifications can be made to the embodiments to embody this technology without departing from its spirit.

[0131] Note that the effects described in this manual are merely illustrative and not limited, and other effects may be provided.

[0132] Note that this technology can also have the following configurations.

[0133] (1) A semiconductor package, comprising:

[0134] substrate;

[0135] A semiconductor chip, wherein the semiconductor chip is electrically connected to the substrate via leads;

[0136] A sealing material that seals the lead wire;

[0137] An adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate; and

[0138] A transparent component, which is bonded to the sealing material via the adhesive layer.

[0139] (2) The semiconductor package according to (1) above, wherein,

[0140] The adhesive layer is black.

[0141] (3) The semiconductor package according to (1) or (2) above, wherein,

[0142] The adhesive layer is made of epoxy resin.

[0143] (4) The semiconductor package according to (1) or (2) above, wherein,

[0144] The adhesive layer is made of silicone resin.

[0145] (5) The semiconductor package according to (1) or (2) above, wherein,

[0146] The adhesive layer contains a variety of resins with different properties.

[0147] (6) The semiconductor package according to (5) above, wherein,

[0148] The adhesive layer comprises epoxy resin and silicone resin.

[0149] (7) The semiconductor package according to any one of (1) to (6) above, wherein,

[0150] The semiconductor chip includes a first semiconductor chip and a second semiconductor chip.

[0151] (8) The semiconductor package according to any one of (1) to (7) above, wherein,

[0152] The thickness of the adhesive layer is not less than 30 micrometers.

[0153] (9) The semiconductor package according to any one of (1) to (8) above, wherein,

[0154] The thickness of the adhesive layer does not exceed 400 micrometers.

[0155] (10) The semiconductor package according to any one of (1) to (9) above, wherein,

[0156] A portion of the adhesive layer protrudes inward beyond the inner wall of the sealing material.

[0157] (11) The semiconductor package according to any one of (1) to (10) above, wherein,

[0158] The bonding surfaces of the adhesive layer and the transparent component have dimensions in a predetermined direction parallel to the substrate ranging from 100 micrometers to 1000 micrometers.

[0159] (12) The semiconductor package according to any one of (1) to (11) above, wherein,

[0160] The elastic modulus of the adhesive layer is lower than that of the sealing material.

[0161] (13) The semiconductor package according to (12) above, wherein,

[0162] The elastic modulus of the adhesive layer does not exceed 3 gigapascals.

[0163] (14) The semiconductor package according to any one of (1) to (13) above, wherein,

[0164] The distance between the semiconductor chip and the transparent component is in the range of 30 micrometers to 300 micrometers.

[0165] (15) A semiconductor device, comprising:

[0166] A semiconductor package, the semiconductor package comprising: a substrate; a conductor chip electrically connected to the substrate via leads; a sealing material sealing the leads; an adhesive layer having a thickness not less than 1 / 10 the thickness of the substrate; and a transparent member bonded to the sealing material via the adhesive layer; and

[0167] A lens group configured to converge an incident light beam and guide the incident light beam to the semiconductor chip.

[0168] (16) A method for manufacturing a semiconductor package, the method comprising:

[0169] The connection process involves electrically connecting the semiconductor chip to the substrate using leads.

[0170] The molding process involves molding the sealing material used to seal the leads;

[0171] In the forming process, an adhesive layer is formed on the sealing material, the adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate; and

[0172] The bonding process involves bonding the transparent component to the sealing material via the adhesive layer.

[0173] Reference tag list

[0174] 100 Semiconductor Devices

[0175] 110 lens group

[0176] 120 DSP circuit

[0177] 130 Display Section

[0178] 140 Operations Department

[0179] 150 bus

[0180] 160-frame memory

[0181] 170 Storage Department

[0182] 180 Power Supply Section

[0183] 200 Semiconductor Packaging

[0184] 210 Transparent component

[0185] 220 Adhesive Layer

[0186] 221 Epoxy Resin

[0187] 222 Silicone Resin

[0188] 230 and 270 sensor chips

[0189] 231 Optical Receiving Area

[0190] 232 pixels

[0191] Pads 233 and 251

[0192] 240 Sealing Material

[0193] 250 Organic substrate

[0194] 261 lead wire

[0195] 262 External connection terminals

[0196] 310 membrane

[0197] 311 Adhesive

[0198] 320 mold

[0199] 12031 Imaging Unit

Claims

1. A semiconductor package, comprising: substrate; A semiconductor chip, wherein the semiconductor chip is electrically connected to the substrate via leads; A sealing material that seals the lead wire; An adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate; as well as A transparent component, which is bonded to the sealing material via the adhesive layer.

2. The semiconductor package according to claim 1, wherein, The adhesive layer is black.

3. The semiconductor package according to claim 1, wherein, The adhesive layer is made of epoxy resin.

4. The semiconductor package according to claim 1, wherein, The adhesive layer is made of silicone resin.

5. The semiconductor package according to claim 1, wherein, The adhesive layer contains a variety of resins with different properties.

6. The semiconductor package according to claim 5, wherein, The adhesive layer comprises epoxy resin and silicone resin.

7. The semiconductor package according to claim 1, wherein, The semiconductor chip includes a first semiconductor chip and a second semiconductor chip.

8. The semiconductor package according to claim 1, wherein, The thickness of the adhesive layer is not less than 30 micrometers.

9. The semiconductor package according to claim 1, wherein, The thickness of the adhesive layer does not exceed 400 micrometers.

10. The semiconductor package according to claim 1, wherein, A portion of the adhesive layer protrudes inward beyond the inner wall of the sealing material.

11. The semiconductor package according to claim 1, wherein, The bonding surfaces of the adhesive layer and the transparent component have dimensions in a predetermined direction parallel to the substrate ranging from 100 micrometers to 1000 micrometers.

12. The semiconductor package according to claim 1, wherein, The elastic modulus of the adhesive layer is lower than that of the sealing material.

13. The semiconductor package according to claim 12, wherein, The elastic modulus of the adhesive layer does not exceed 3 gigapascals.

14. The semiconductor package according to claim 1, wherein, The distance between the semiconductor chip and the transparent component is in the range of 30 micrometers to 300 micrometers.

15. A semiconductor device, comprising: A semiconductor package, the semiconductor package comprising: a substrate; a conductor chip electrically connected to the substrate via leads; a sealing material sealing the leads; an adhesive layer having a thickness not less than 1 / 10 the thickness of the substrate; and a transparent member bonded to the sealing material via the adhesive layer; and A lens group configured to converge an incident light beam and guide the incident light beam to the semiconductor chip.

16. A method for manufacturing a semiconductor package, the method comprising: The connection process involves electrically connecting the semiconductor chip to the substrate using leads. The molding process involves molding the sealing material used to seal the leads; In the forming process, an adhesive layer is formed on the sealing material, the adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate; and The bonding process involves bonding the transparent component to the sealing material via the adhesive layer.

Images