Display device

Abstract

A display device includes a substrate having a light emitting region and a non-light emitting region; a light emitting diode located over the substrate within the light emitting region and including a first electrode, a light emitting layer, and a second electrode; a pixel definition layer located over the substrate within the non-light emitting region; a first light blocking portion located over the pixel definition layer; and a second light blocking portion located over the first light blocking portion, wherein the pixel definition layer has light absorption properties, wherein each of the first light blocking portion and the second light blocking portion transmits linearly polarized light in a transmission axis direction and reflects or absorbs linearly polarized light perpendicular to the transmission axis direction.

Description

[0001] Cross-reference to related applications This application claims priority to Korean Patent Application No. 10-2025-0031234, filed in Korea on March 11, 2025, the entire contents of which are expressly incorporated herein by reference. Technical Field

[0002] This disclosure relates to a display device, and more specifically, to a display device capable of preventing display quality degradation and visibility differences due to reflection of external light. Background Technology

[0003] Display devices such as TVs, monitors, smartphones, tablets, and laptops can display images in various formats and forms.

[0004] Display devices may include a display panel having multiple light-emitting elements or liquid crystals for displaying images, and transistors for controlling the operation of each light-emitting element or liquid crystal. These display devices can display desired images through multiple light-emitting elements or liquid crystals.

[0005] As a type of display device, the technology of light-emitting display devices, including those using light-emitting diodes (LEDs), is developing rapidly. Light-emitting display devices can be divided into organic light-emitting display devices that utilize organic light-emitting materials and inorganic light-emitting display devices that utilize inorganic light-emitting materials.

[0006] To minimize reflection of external light, light-emitting display devices may include polarizing plates located on their display surfaces. Recently, various research and development efforts have been undertaken to improve the reliability and quality of display devices. Summary of the Invention

[0007] Therefore, embodiments of this disclosure relate to a display device that substantially eliminates one or more problems caused by the limitations and disadvantages of related technologies.

[0008] Various embodiments of this disclosure provide a display device capable of achieving a sense of unity through a display area and a non-display area having the same reflectivity and reflective visibility.

[0009] Various embodiments of this disclosure provide a display device capable of achieving a simplified structure.

[0010] Various embodiments of this disclosure provide a display device capable of minimizing stain caused by reflection of external light while maintaining / improving brightness (preventing brightness reduction).

[0011] Various embodiments of this disclosure provide a display device that can improve flexibility and is suitable for foldable products with foldable display areas.

[0012] Various embodiments of this disclosure provide a display device that can omit a polarizing plate.

[0013] Various embodiments of this disclosure provide a display device with low reflection and low power consumption.

[0014] The purpose of this disclosure is not limited to the above-described purposes, and other technical purposes can be inferred from the embodiments described below.

[0015] Additional features and aspects will be set forth in the description which follows and will become apparent in part from the specification, or may be learned by practicing the inventive concept presented herein. Other features and aspects of the inventive concept may be realized and obtained by means of structures particularly pointed out in the written description or derived therefrom, the claims, and the drawings.

[0016] To achieve these and other aspects of the present invention, as specifically described and generally described herein, a display device includes: a substrate having a light-emitting region and a non-light-emitting region; a light-emitting diode (LED) located on the substrate within the light-emitting region and including a first electrode, a light-emitting layer, and a second electrode; a pixel defining layer located on the substrate within the non-light-emitting region; a first light-blocking portion located on the pixel defining layer; and a second light-blocking portion located on the first light-blocking portion, wherein the pixel defining layer has light-absorbing properties, and each of the first and second light-blocking portions transmits linearly polarized light in the transmission axis direction and reflects or absorbs linearly polarized light perpendicular to the transmission axis direction.

[0017] It should be understood that the foregoing general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed inventive concept. Attached Figure Description

[0018] The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of this disclosure. The drawings illustrate embodiments of the disclosure and, together with the specification, serve to illustrate various principles of the disclosure. In the drawings: Figure 1 This is a schematic cross-sectional view of a display device according to a first embodiment of the present disclosure; Figure 2 This is a schematic plan view of a display device according to a first embodiment of the present disclosure; Figure 3 This is a schematic cross-sectional view of a display device according to a first embodiment of the present disclosure; Figure 4 This is a schematic perspective view of the first light-blocking portion according to an embodiment of the present disclosure; Figure 5This is a schematic diagram showing the structure of the second light-blocking portion according to an embodiment of the present disclosure; Figure 6 This is a schematic diagram illustrating the external light path of a display device according to a first embodiment of the present disclosure; Figure 7 This is a schematic cross-sectional view of a display device according to a second embodiment of the present disclosure; Figure 8 This is a schematic diagram illustrating the external light path of a display device according to a second embodiment of the present disclosure; Figure 9 This is a schematic cross-sectional view of a display device according to a third embodiment of the present disclosure; Figure 10 This is a schematic exploded perspective view of a display module according to an embodiment of the present disclosure; Figure 11 A schematic cross-sectional view of a display module according to an embodiment of the present disclosure; and Figure 12 This is a schematic plan view of a display module according to an embodiment of the present disclosure. Detailed Implementation

[0019] The advantages and features of this disclosure and its implementation methods will become clear from the embodiments described in detail below with reference to the accompanying drawings. However, this disclosure can be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. The embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0020] The shapes, sizes, dimensions (e.g., length, width, height, thickness, radius, diameter, area, etc.), ratios, angles, number of elements, etc. shown in the accompanying drawings used to describe embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto.

[0021] For ease of description, dimensions including size and thickness are shown for each component shown in the accompanying drawings, and this disclosure is not limited to the size and thickness of the components shown, but it should be noted that the relative dimensions including relative size, position and thickness of the components shown in the various drawings attached herein are part of this disclosure.

[0022] Throughout this disclosure, the same reference numerals refer to the same parts.

[0023] Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies will be omitted or may be briefly discussed when it is determined that such detailed descriptions would unnecessarily obscure the essential points of this disclosure.

[0024] When using terms such as “including,” “having,” “comprising,” etc., as mentioned in this disclosure, additional parts may be added, unless the term “only” is used herein.

[0025] Furthermore, when a component is expressed in the singular form, the plural form is included unless otherwise stated.

[0026] When analyzing components, the error range is interpreted as being included even if there is no explicit description.

[0027] When describing positional relationships, for example, when the positional relationship between two parts / layers is described as "above", "on", "above", "below", "below", "next to", etc., one or more other parts / layers may be placed between these two parts / layers, unless the terms "closely" or "directly" are used at the same time.

[0028] When describing temporal relationships, such as when temporal sequence is described as “after,” “following,” “next,” “before,” etc., discontinuous or non-sequential cases may also be included unless “immediately” or “directly” is used.

[0029] As used herein, the terms “connection” and “bonding” are intended to have the broadest possible meaning. Specifically, the phrase “A connected to B” includes both a direct connection (where no intermediate parts or components exist) and an indirect connection (where one or more intermediate parts or components exist between A and B). In other words, “A connected to B” includes both direct physical or electrical bonding and indirect bonding via one or more intermediate parts. Unless explicitly stated otherwise, these terms do not require direct physical or electrical contact. The terms “bonding” and “contact” should be interpreted in the same way. For example, as used herein, the term “in contact with” includes both “indirect contact” and “direct contact.” Therefore, when the phrase “A in contact with B” is used, it means that there may be other components between A and B unless it is explicitly stated that “A and B are in direct contact.”

[0030] Although the terms first, second, etc., are used to describe various components, these components are not substantially limited by these terms. These terms are only used to distinguish one component from another and may not define any order or sequence. Therefore, within the technical spirit of this disclosure, the first component described below can essentially be the second component.

[0031] Features of the various embodiments of this disclosure may be combined or integrated with each other in part or in whole, may be technically linked and driven in various ways, and each embodiment may be implemented independently of each other or may be implemented together in an associated relationship.

[0032] Unless otherwise stated, the transistors constituting the pixel circuits of this disclosure may include at least one of oxide thin film transistors (oxide TFTs), amorphous silicon TFTs (a-Si TFTs), and low-temperature polycrystalline silicon TFTs (LTPS TFTs).

[0033] The following embodiments will focus on organic light-emitting display devices. However, the embodiments of this disclosure are not limited to light-emitting display devices, and can be applied to inorganic light-emitting display devices that include inorganic light-emitting materials and micro-LED display devices. For example, the embodiments of this disclosure can also be applied to quantum dot display devices. That is, the display devices of this disclosure can be light-emitting display devices that include organic light-emitting diodes, quantum dot light-emitting display devices that include quantum dot light-emitting diodes, or micro-LED display devices that include micro-LEDs.

[0034] In the following, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0035] Figure 1 This is a schematic cross-sectional view of a display device according to a first embodiment of the present disclosure.

[0036] Reference Figure 1 The display device 100A according to the first embodiment of this disclosure may include a display area DA for displaying an image and a non-display area NDA disposed on at least one side of the display area DA. A light-emitting diode De may be disposed on a substrate 102 within the display area DA. An encapsulation layer 180, a sensor unit 190, a color unit 200, and a cover window 104 may be disposed on the light-emitting diode De.

[0037] Specifically, a plurality of sub-pixels SP can be provided within the display area DA. For example, the plurality of sub-pixels SP can include three types of sub-pixels constituting a pixel, namely, a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. The first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 can be a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the number of sub-pixels SP constituting a pixel can be different.

[0038] Each sub-pixel SP may include a light-emitting region EA and a non-light-emitting region NEA. A light-emitting diode De may be configured on the substrate 102 corresponding to the light-emitting region EA. The light-emitting diode De may include a first electrode 162, a light-emitting layer 164, and a second electrode 166.

[0039] A pixel defining layer 120 may be provided on the substrate 102 corresponding to the non-light-emitting region NEA. The pixel defining layer 120 may be disposed between the light-emitting regions EA of adjacent sub-pixels SP. Furthermore, the pixel defining layer 120 may also be disposed within the non-display region NDA. The pixel defining layer 120 may have light-absorbing properties. The pixel defining layer 120 may be a black dam.

[0040] A first light-blocking portion 170 may be provided on the pixel limiting layer 120. The first light-blocking portion 170 may be provided within the non-light-emitting area NEA and the non-display area NDA. The first light-blocking portion 170 may overlap with the pixel limiting layer 120.

[0041] The first light-blocking portion 170 can selectively transmit light. That is, the first light-blocking portion 170 can transmit light parallel to its transmission axis and reflect light perpendicular to its transmission axis.

[0042] The first light-blocking portion 170 may be formed of a metallic material. For example, the first light-blocking portion 170 may be formed of aluminum (Al), but is not limited thereto.

[0043] The first light-blocking portion 170 can be formed of the same material as the second electrode 166 and formed on the same layer as the second electrode 166. In this case, the first light-blocking portion 170 can be connected to the second electrode 166, which will be described in detail later.

[0044] Next, the encapsulation layer 180 can be disposed above the light-emitting diode De and the first light-blocking portion 170. The encapsulation layer 180 can be disposed within the display area DA and the non-display area NDA. The encapsulation layer 180 can have a multilayer structure including at least one inorganic layer and at least one organic layer.

[0045] For example, encapsulation layer 180 may include a first encapsulation layer 182, a second encapsulation layer 184, and a third encapsulation layer 186. In this case, the second encapsulation layer 184 may be disposed between the first encapsulation layer 182 and the third encapsulation layer 186. The first encapsulation layer 182 and the third encapsulation layer 186 may be inorganic layers, and the second encapsulation layer 184 may be an organic layer.

[0046] The sensor unit 190 may be disposed on the encapsulation layer 180 to detect external inputs such as touch. The sensor unit 190 may include a sensor insulating layer 192 as a sensor buffer layer, a sensor electrode 196, and a sensor insulating layer 198 as a sensor passivation layer.

[0047] Sensor insulating layer 192 can be disposed on encapsulation layer 180, sensor electrode 196 can be disposed on sensor insulating layer 192, and sensor insulating layer 198 can be disposed on sensor electrode 196. Sensor insulating layers 192 and 198 can be disposed within display area DA and non-display area NDA. Sensor electrode 196 can be disposed within display area DA.

[0048] The color unit 200 may be disposed on the sensor unit 190. The color unit 200 may include a color buffer layer 210, a color filter layer 240, and a color protection layer 250. In addition, the color unit 200 may further include a second light blocking portion 230.

[0049] A color buffer layer 210 can be disposed on the sensor unit 190, a color filter layer 240 and a second light blocking portion 230 can be disposed on the color buffer layer 210, and a color protection layer 250 can be disposed on the color filter layer 240. The color buffer layer 210 and the color protection layer 250 can be disposed within the display area DA and the non-display area NDA.

[0050] The color filter layer 240 can be configured to correspond to the light-emitting area EA of each sub-pixel SP. The color filter layer 240 may include a first color filter, a second color filter, and a third color filter corresponding to the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively. For example, the first color filter, the second color filter, and the third color filter may be a red color filter, a green color filter, and a blue color filter, respectively.

[0051] The second light-blocking portion 230 can be configured to correspond to the non-light-emitting area NEA of the display area DA. The second light-blocking portion 230 can overlap with the color filter layer 240. Alternatively, the second light-blocking portion 230 can also be disposed within the non-display area NDA. The second light-blocking portion 230 can overlap with the pixel defining layer 120 and the first light-blocking portion 170.

[0052] The second light-blocking portion 230 can selectively transmit light. That is, the second light-blocking portion 230 can transmit light parallel to its transmission axis and reflect light perpendicular to its transmission axis.

[0053] Here, the transmission axis of the second light blocking section 230 can be aligned with the transmission axis of the first light blocking section 170. That is, the transmission axis of the second light blocking section 230 can have the same direction as and be parallel to the transmission axis of the first light blocking section 170.

[0054] The second light-blocking portion 230 may include a reactive liquid crystal precursor (RM) as the main component and a dichroic dye as the object component. The dichroic dye can be aligned along a predetermined direction by the reactive liquid crystal precursor, thereby absorbing light parallel to the predetermined direction and transmitting light perpendicular to the predetermined direction.

[0055] A cover window 104 can be disposed above the color unit 200. The cover window 104 can protect the components disposed below it from external impacts, moisture, oxygen, or particles. The cover window 104 can be formed of glass or a transparent film.

[0056] Therefore, in the display device 100A according to the first embodiment of the present disclosure, the color filter layer 240 can be disposed on the light-emitting diode De within the light-emitting region EA of the display region DA, thereby improving reflective visibility and / or viewing angle.

[0057] Furthermore, in the display device 100A according to the first embodiment of this disclosure, by providing a light-absorbing pixel limiting layer 120, a first light-blocking portion 170, and a second light-blocking portion 230 in the non-light-emitting region NEA of the display region DA and the non-display region NDA, external light can be prevented from being reflected and output to the outside. Therefore, image quality can be improved by minimizing the light spots caused by the reflection of external light.

[0058] Furthermore, since the same configuration to prevent external light reflection is set in both the display area DA and the non-display area NDA, the reflectivity and reflective visibility characteristics can be the same in both the display area DA and the non-display area NDA, thus achieving a sense of unity.

[0059] As described above, the first light-blocking portion 170 of the display device 100A according to the first embodiment of this disclosure can be formed of the same material as the second electrode 166 of the light-emitting diode De, and is disposed on the same layer as the second electrode 166. (Refer to...) Figure 2 This will be described.

[0060] Figure 2 This is a schematic plan view of a display device according to a first embodiment of the present disclosure. Figure 2 Various shapes and arrangements of the light-emitting regions EA of multiple sub-pixels corresponding to one pixel and the first light-blocking portion 170 are shown.

[0061] here, Figure 2 (a) shows the luminous region EA of the four sub-pixels. Figure 2 of (b) Figure 2 (c) and Figure 2(d) illustrates the luminous region EA of three sub-pixels. The luminous regions EA of multiple sub-pixels can have different shapes and / or areas. However, embodiments of this disclosure are not limited thereto. In other embodiments, the luminous regions EA of multiple sub-pixels can have the same shape and / or area.

[0062] like Figure 2 As shown in (a), the light-emitting regions EA of the four sub-pixels can generally have a rectangular or elliptical shape, and can be spaced apart in the first direction X and the second direction Y to form a cross shape.

[0063] like Figure 2 (b) and Figure 2 As shown in (c), all the light-emitting regions EA of the three sub-pixels can have a rectangular or circular shape. In this case, the light-emitting regions EA of two sub-pixels can be spaced apart from each other in the second direction Y, and the light-emitting region EA of the remaining sub-pixel can be spaced apart from the light-emitting regions EA of the two sub-pixels in the first direction X.

[0064] like Figure 2 As shown in (d), all the light-emitting areas EA of the three sub-pixels can have a rectangular shape and can be spaced apart in the first direction X.

[0065] Reference Figure 2 In Figures (a) to (d), the second electrode 166 can be disposed in each light-emitting region EA, and the first light-blocking part 170 can be disposed between adjacent light-emitting regions EA, that is, disposed in the non-light-emitting region NEA.

[0066] The first light-blocking portion 170 may include a plurality of patterns spaced apart from each other in a first direction X and extending along a second direction Y. The first light-blocking portion 170 can selectively transmit light, and the transmission axis of the first light-blocking portion 170 may be perpendicular to the extension direction of the patterns (i.e., the second direction Y). Therefore, the transmission axis of the first light-blocking portion 170 may be parallel to the first direction X. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the first light-blocking portion 170 may include a plurality of patterns spaced apart from each other in the second direction Y and extending along the first direction X.

[0067] The first light-blocking portion 170 can be formed of the same material as the second electrode 166 and can be formed on the same layer as the second electrode 166. In this case, a portion of the first light-blocking portion 170 can be connected to the second electrode 166 of the light-emitting region EA and can be formed as a single unit.

[0068] on the other hand, Figure 1The second light blocking part 230 can be provided in a basically the same way as the first light blocking part 170, that is, it can be provided in the non-light-emitting area NEA between adjacent light-emitting areas EA.

[0069] Reference Figure 3 The configuration of sub-pixels of the display device 100A according to the first embodiment of the present disclosure is described in detail.

[0070] Figure 3 This is a schematic cross-sectional view of a display device according to a first embodiment of the present disclosure.

[0071] Reference Figure 3 According to the first embodiment of the present disclosure, the sub-pixel SP of the display device 100A may include a first transistor T1, a second transistor T2, a storage capacitor Cst, a light-emitting diode De, an encapsulation layer 180, a sensor unit 190, and a color unit 200. Furthermore, a first light-shielding layer 131 may be disposed below the first transistor T1, and a second light-shielding layer 141 may be disposed below the second transistor T2.

[0072] The first transistor T1 may include a first active layer 132, a first gate 133, a first source 134, and a first drain 135. The second transistor T2 may include a second active layer 142, a second gate 143, a second source 144, and a second drain 145. The first active layer 132 and the second active layer 142 may be formed of different materials.

[0073] The first transistor T1 can be an oxide semiconductor thin-film transistor, and the second transistor T2 can be a low-temperature polycrystalline silicon thin-film transistor.

[0074] Specifically, substrate 102 may be a flexible substrate. Substrate 102 may have a multilayer structure and may include, for example, a first base layer, a second base layer, and a third base layer.

[0075] The first and third base layers can be formed of plastics with relatively high thermal stability. For example, the first and third base layers can be formed of polyimide, polyethersulfone, polyetherketone, polyamide, or polybenzimidazole, but are not limited thereto.

[0076] A second base layer can be interposed between the first and third base layers to enhance the rigidity of the substrate and improve its moisture resistance. The second base layer can be an inorganic layer. For example, the second base layer can be made of materials such as silicon oxide (SiO2). x ) or silicon nitride (SiN) x The second base layer is formed from an inorganic insulating material. Alternatively, it can be formed from a metallic material such as copper (Cu), aluminum (Al), or stainless steel (SUS).

[0077] However, the embodiments disclosed herein are not limited thereto. In other embodiments, the substrate 102 may be a glass substrate and may have a single-layer structure.

[0078] The second light-shielding layer 141 may be disposed on the substrate 102. The second light-shielding layer 141 may be formed of a conductive material such as a metal. For example, the second light-shielding layer 141 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), and alloys thereof. The second light-shielding layer 141 may have a single-layer structure or a multi-layer structure.

[0079] Although not shown in the figure, a buffer layer may be further provided between the substrate 102 and the second light-shielding layer 141. The buffer layer may be formed as a single layer or multiple layers of inorganic insulating material.

[0080] A first buffer layer 112 of inorganic insulating material may be disposed on the second light-shielding layer 141. For example, the inorganic insulating material of the first buffer layer 112 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0081] The second active layer 142 may be disposed above the first buffer layer 112. The second active layer 142 may overlap with the second light-shielding layer 141. The second light-shielding layer 141 may block light from incident on the second active layer 142 and prevent or reduce the degradation of the second active layer 142 due to light.

[0082] The second active layer 142 may include a channel region 142a located at its center and source regions 142s and drain regions 142d located on both sides of the channel region 142a. The second active layer 142 may be formed of a polycrystalline semiconductor material (i.e., polycrystalline silicon), and the source regions 142s and drain regions 142d of the second active layer 142 may be doped with impurities.

[0083] A first gate insulating layer 113 may be disposed above the second active layer 142. The first gate insulating layer 113 may be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the first gate insulating layer 113 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0084] The second gate 143 may be disposed above the first gate insulating layer 113. The second gate 143 may be formed of a conductive material such as a metal. For example, the second gate 143 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), and alloys thereof. The second gate 143 may have a single-layer structure or a multi-layer structure.

[0085] The second gate 143 can be configured to correspond to the central portion of the second active layer 142 and can overlap with the channel region 142a of the second active layer 142.

[0086] Furthermore, a first capacitor electrode 151 may be disposed on the first gate insulating layer 113. The first capacitor electrode 151 may be formed of the same material as the second gate 143 and may be formed on the same layer as the second gate 143.

[0087] A first interlayer insulating layer 114 may be disposed above the second gate 143 and the first capacitor electrode 151. The first interlayer insulating layer 114 may be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the first interlayer insulating layer 114 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0088] A second buffer layer 115 may be disposed above the first interlayer insulating layer 114. The second buffer layer 115 may be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the second buffer layer 115 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0089] A first light-shielding layer 131 may be disposed above the second buffer layer 115. The first light-shielding layer 131 may be spaced apart from the second light-shielding layer 141, the first capacitor electrode 151, and the second transistor T2. The first light-shielding layer 131 may be formed of a conductive material such as a metal. For example, the first light-shielding layer 131 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), and alloys thereof. The first light-shielding layer 131 may have a single-layer structure or a multi-layer structure.

[0090] Furthermore, a second capacitor electrode 152 may be disposed on the second buffer layer 115. The second capacitor electrode 152 may be formed of the same material as the first light-shielding layer 131 and may be formed on the same layer as the first light-shielding layer 131. The second capacitor electrode 152 may overlap with the first capacitor electrode 151 to form a storage capacitor Cst.

[0091] A third buffer layer 116 may be disposed above the first light-shielding layer 131 and the second capacitor electrode 152. The third buffer layer 116 may be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the third buffer layer 116 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0092] The first active layer 132 may be disposed above the third buffer layer 116. The first active layer 132 may overlap with the first light-shielding layer 131. The first light-shielding layer 131 may block light from incident on the first active layer 132 and prevent or reduce the degradation of the first active layer 132 due to light.

[0093] The first active layer 132 may include a channel region 132a located at its center and source regions 132s and drain regions 132d located on both sides of the channel region 132a. For example, the first active layer 132 may be formed of an oxide semiconductor material such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), or indium aluminum zinc oxide (IAZO).

[0094] The source region 132s and drain region 132d of the first active layer 132 may be doped with impurities. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the source region 132s and drain region 132d of the first active layer 132 may not be doped with impurities.

[0095] A second gate insulating layer 117 may be disposed above the first active layer 132. The second gate insulating layer 117 may be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the second gate insulating layer 117 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0096] The first gate 133 may be disposed above the second gate insulating layer 117. The first gate 133 may be formed of a conductive material such as a metal. For example, the first gate 133 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), and alloys thereof. The first gate 133 may have a single-layer structure or a multi-layer structure.

[0097] The first gate 133 can be configured to correspond to the central portion of the first active layer 132 and can overlap with the channel region 132a of the first active layer 132.

[0098] A second interlayer insulating layer 118 may be disposed above the first gate 133. The second interlayer insulating layer 118 may be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the second interlayer insulating layer 118 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0099] The first source 134 and the first drain 135, as well as the second source 144 and the second drain 145, can be disposed on the second interlayer insulating layer 118. The first gate 133 can be disposed on the second gate insulating layer 117. The first source 134 and the first drain 135, as well as the second source 144 and the second drain 145, can be formed of a conductive material such as a metal. For example, the first source 134 and the first drain 135, as well as the second source 144 and the second drain 145, can be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), and alloys thereof. The first source 134 and the first drain 135, as well as the second source 144 and the second drain 145, can have a single-layer structure or a multi-layer structure.

[0100] The first source 134 and the first drain 135 can be spaced apart from each other with the first gate 133 located between them, and can be contacted with the source region 132s and the drain region 132d of the first active layer 132 respectively through contact holes provided in the second gate insulating layer 117 and the second interlayer insulating layer 118.

[0101] Furthermore, the first drain 135 can extend to overlap with the first capacitor electrode 151 and the second capacitor electrode 152. The first drain 135 can contact the second capacitor electrode 152 through contact holes provided in the third buffer layer 116, the second gate insulating layer 117 and the second interlayer insulating layer 118, and can be electrically connected to the second capacitor electrode 152.

[0102] On the other hand, the second source 144 and the second drain 145 can be spaced apart from each other with the second gate 143 located between them, and can be contacted with the source region 142s and the drain region 142d of the second active layer 142 respectively through contact holes provided in the first gate insulating layer 113, the first interlayer insulating layer 114, the second buffer layer 115, the third buffer layer 116, the second gate insulating layer 117 and the second interlayer insulating layer 118.

[0103] The first active layer 132, the first gate 133, the first source 134, and the first drain 135 can constitute a first transistor T1. The second active layer 142, the second gate 143, the second source 144, and the second drain 145 can constitute a second transistor T2. The first transistor T1 can be a driving transistor and / or a light-emitting transistor. The second transistor T2 can be a switching transistor and / or a sensing transistor, and can be electrically connected to the first transistor T1.

[0104] The second drain 145 of the second transistor T2 can be connected to the first gate 133 of the first transistor T1. Here, the second transistor T2 can be switched according to the scan signal transmitted through the gate line, and the data signal input to the second source 144 via the data line can be transmitted to the first gate 133 through the second drain 145. In addition, the first transistor T1 can be switched according to the data signal, and the power supply voltage input to the first source 134 can be transmitted to the light-emitting diode De through the first drain 135.

[0105] Thus, the display device 100A according to the first embodiment of this disclosure may include a first transistor T1 and a second transistor T2 with different configurations. Here, the first transistor T1 may be an oxide semiconductor thin-film transistor (OSBMT) using an oxide semiconductor material as the first active layer 132. OSBMTs can have excellent leakage current blocking effects and can be manufactured at a relatively low cost. On the other hand, the second transistor T2 may be a low-temperature polycrystalline silicon (LTPS) thin-film transistor (LTPS) using a polycrystalline semiconductor material as the second active layer 142. LPSSTs can have fast operating speeds and excellent reliability.

[0106] Therefore, the display device 100A according to the first embodiment of this disclosure may include both oxide semiconductor thin film transistors and low temperature polycrystalline silicon thin film transistors, and they may be selectively applied according to the operating performance, thereby improving the driving characteristics of the display device.

[0107] One or more switching transistors having the same configuration as the first transistor T1 and / or the second transistor T2 may be further disposed on the substrate 102. However, embodiments of this disclosure are not limited thereto. In other embodiments, the driving transistor and / or the light-emitting transistor may have the same configuration as the second transistor T2, and the switching transistor and / or the sensing transistor may have the same configuration as the first transistor T1.

[0108] Alternatively, the second transistor T2 may be a transistor of a gate driving unit disposed on the substrate 102, and the gate driving unit may further include a transistor having the same configuration as the first transistor T1.

[0109] Next, a planarization layer 119 may be provided above the first source 134 and the first drain 135, as well as the second source 144 and the second drain 145. Although not shown in the figure, an inorganic layer of inorganic insulating material may be further provided below the planarization layer 119.

[0110] The planarization layer 119 can eliminate step differences caused by the underlying layer and can have a substantially flat top surface. The planarization layer 119 can be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic acid) or benzocyclobutene (BCB).

[0111] The planarization layer 119 may have a multi-layer structure. For example, the planarization layer 119 may include a first planarization layer 119a, a second planarization layer 119b, and a third planarization layer 119c.

[0112] Specifically, the first planarization layer 119a can be disposed on the first source 134 and the first drain 135, as well as the second source 144 and the second drain 145.

[0113] A connection electrode 154 may be disposed on the first planarization layer 119a. The connection electrode 154 may overlap with the first drain electrode 135 and may contact the first drain electrode 135 through a contact hole disposed in the first planarization layer 119a.

[0114] The connecting electrode 154 can be formed of a conductive material such as a metal. For example, the connecting electrode 154 can be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), and alloys thereof. The connecting electrode 154 can have a single-layer structure or a multi-layer structure.

[0115] The second planarization layer 119b can be disposed on the connecting electrode 154, and the third planarization layer 119c can be disposed on the second planarization layer 119b.

[0116] In display devices including light-emitting diodes (LEDs) De, the flatness of the first electrode 162 of the LED De is reduced due to step differences caused by electrodes or wiring disposed beneath the LED De, which may lead to problems such as a shortened lifespan of the LED De. However, in the display device 100A according to the first embodiment of this disclosure, since a planarization layer 119 having a multilayer structure is disposed beneath the LED De, problems caused by step differences can be prevented.

[0117] Here, planarization layer 119 is described as having a three-layer structure including a first planarization layer 119a, a second planarization layer 119b, and a third planarization layer 119c. However, embodiments of this disclosure are not limited thereto. In other embodiments, the connecting electrode 154 and the first planarization layer 119a may be omitted, and planarization layer 119 may have a two-layer structure. Furthermore, in other embodiments, additional planarization layers may be provided, and planarization layer 119 may have a multilayer structure including four or more layers.

[0118] Next, the first electrode 162 can be disposed on the third planarization layer 119c and can be formed of a conductive material with a relatively high work function. The first electrode 162 can contact the connecting electrode 154 through contact holes provided in the second planarization layer 119b and the third planarization layer 119c. Therefore, the first electrode 162 can be electrically connected to the first drain 135 of the first transistor T1 through the connecting electrode 154.

[0119] Alternatively, when the connecting electrode 154 and the first planarization layer 119a are omitted, the first electrode 162 can directly contact the first drain electrode 135 through contact holes provided in the second planarization layer 119b and the third planarization layer 119c.

[0120] For example, the first electrode 162 may comprise a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may comprise titanium (Ti). However, embodiments of this disclosure are not limited thereto.

[0121] On the other hand, the first electrode 162 can have a multilayer structure comprising a material with relatively high reflectivity. For example, the first electrode 162 can be formed as a three-layer structure such as titanium, aluminum, and titanium (Ti / Al / Ti), a three-layer structure of indium tin oxide, aluminum, and indium tin oxide (ITO / Al / ITO), a three-layer structure of indium tin oxide, silver, and indium tin oxide (ITO / Ag / ITO), or a three-layer structure of indium tin oxide, silver alloy, and indium tin oxide (ITO / Ag alloy / ITO) with relatively high reflectivity. Here, the silver alloy can be a silver-palladium-copper alloy (APC).

[0122] A pixel defining layer 120 of organic insulating material may be disposed on the first electrode 162. The pixel defining layer 120 may overlap with and cover the edge of the first electrode 162. The pixel defining layer 120 may expose the central portion of the first electrode 162. The pixel defining layer 120 may cover the contact holes disposed in the second planarization layer 119b and the third planarization layer 119c.

[0123] The pixel defining layer 120 may have an opening that exposes the central portion of the first electrode 162. The pixel defining layer 120 may be configured to correspond to the non-light-emitting region NEA, and the opening of the pixel defining layer 120 may correspond to the light-emitting region EA.

[0124] The pixel defining layer 120 may have light-absorbing properties. The pixel defining layer 120 may be a black embankment. The pixel defining layer 120 may include black particles (light-absorbing particles) dispersed in an organic material (binder). For example, the organic material may be one of photosensitive acrylic polymer (photoacrylic acid), benzocyclobutene (BCB), and polyimide, and the light-absorbing particles may be one of carbon black, carbon nanotubes (CNTs), and graphene.

[0125] A first spacer 123 having a generally conical shape and a second spacer 124 having an inverted conical shape may be provided on the pixel limiting layer 120.

[0126] The first spacing portion 123 can support the metal mask used when the light-emitting layer 164 is formed later, and the second spacing portion 124 can separate the light-emitting layer 164 and the second electrode 166 formed later to block the lateral leakage current between adjacent sub-pixels SP.

[0127] The first spacer 123 and the second spacer 124 can be formed as a single layer or multiple layers of an organic insulating material such as a photosensitive acrylic polymer (photoacrylic acid) or benzocyclobutene (BCB). At least one of the first spacer 123 and the second spacer 124 may be omitted.

[0128] On the other hand, an auxiliary limiting layer 122 may be provided between the pixel limiting layer 120 and the first spacing portion 123 and the second spacing portion 124. The auxiliary limiting layer 122 may have a shape substantially the same as that of the pixel limiting layer 120. That is, the auxiliary limiting layer 122 may have an opening that exposes the central portion of the first electrode 162, and may be configured to correspond to the non-light-emitting region NEA.

[0129] The auxiliary limiting layer 122 may be formed of the same material as the first spacer 123 and the second spacer 124. In this case, the auxiliary limiting layer 122 may be connected to the first spacer 123 and formed integrally with the first spacer 123.

[0130] Here, the auxiliary limiting layer 122 may have different properties from the pixel limiting layer 120, namely, light transmission properties. The auxiliary limiting layer 122 may be formed of the same organic material as the adhesive of the pixel limiting layer 120, and may not include light-absorbing particles.

[0131] An auxiliary defining layer 122 can be formed to facilitate the patterning of the pixel defining layer 120 with light absorption properties, and the auxiliary defining layer 122 can be omitted. Therefore, the first spacing portion 123 and the second spacing portion 124 can be directly formed on the pixel defining layer 120.

[0132] The light-emitting layer 164 may be disposed on the first electrode 162 exposed through the openings in the pixel limiting layer 120 and the auxiliary limiting layer 122. The light-emitting layer 164 may also be disposed on the auxiliary limiting layer 122, the first spacer 123, and the second spacer 124.

[0133] The light-emitting layer 164 may include at least one hole auxiliary layer, at least one light-emitting material layer and at least one electron auxiliary layer constituting a light-emitting unit.

[0134] The luminescent material layer may contain one of red, green, or blue luminescent materials. The luminescent material may be an organic luminescent material such as a phosphorescent or fluorescent compound, or an inorganic luminescent material such as a quantum dot.

[0135] The hole auxiliary layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL). The electron auxiliary layer may include at least one of an electron injection layer (EIL) and an electron transport layer (ETL).

[0136] The light-emitting layer 164 can emit white light and can be disposed substantially within the entire display area DA. In this case, the light-emitting layer 164 may include multiple light-emitting units that emit light of different colors and are stacked together. Each stack may include at least one hole-assisted layer, at least one light-emitting material layer, and at least one electron-assisted layer.

[0137] For example, the light-emitting layer 164 may have a stacked structure with two or more light-emitting units emitting different colors, and a charge generation layer (CGL) may be disposed between the two or more light-emitting units.

[0138] However, the embodiments disclosed herein are not limited thereto. In other embodiments, the light-emitting layer 164 may be individually configured for each sub-pixel and may emit one of red, green, and blue light.

[0139] The light-emitting layer 164 can be separated from the second spacer 124. That is, the portion of the light-emitting layer 164 above the auxiliary limiting layer 122 can be separated from the portion of the light-emitting layer 164 above the second spacer 124 without being connected.

[0140] The second electrode 166 can be disposed on the light-emitting layer 164 and can be formed of a conductive material with a relatively low work function. The second electrode 166 can be disposed within the light-emitting region EA.

[0141] The second electrode 166 can be formed of aluminum (Al), magnesium (Mg), silver (Ag), or alloys thereof. In this case, the second electrode 166 can have a relatively thin thickness, allowing light from the light-emitting layer 164 to pass through it. For example, the second electrode 166 can have a thickness of 5 nm to 10 nm, but the embodiments of this disclosure are not limited thereto.

[0142] Alternatively, the second electrode 166 can be formed of a transparent conductive material such as indium gallium oxide (IGO) or IZO.

[0143] The first electrode 162, the light-emitting layer 164, and the second electrode 166 can constitute a light-emitting diode (LED) De. Here, the first electrode 162 can be used as the anode, and the second electrode 166 can be used as the cathode. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the first electrode 162 can be used as the cathode, and the second electrode 166 can be used as the anode.

[0144] Light emitted from the light-emitting layer 164 of the light-emitting diode De can be output to the outside through the second electrode 166. Such a display device 100A according to the first embodiment of this disclosure can be a top-emitting type display device.

[0145] On the other hand, the first light blocking portion 170 can be disposed on the light emitting layer 164 within the non-light emitting region NEA. The first light blocking portion 170 can overlap with the pixel limiting layer 120, the auxiliary limiting layer 122, the first spacing portion 123, and the second spacing portion 124.

[0146] Reference Figure 4 The first light blocking part 170 is described in detail. Figure 4 This is a schematic perspective view of the first light-blocking portion according to an embodiment of the present disclosure. For ease of explanation, only the substrate and the first light-blocking portion are shown.

[0147] Reference Figure 4 The first light blocking part 170 can be a linear grid polarizer that selectively reflects or transmits light by exciting metal electrons on the grid in one direction, thereby generating a single polarization.

[0148] Specifically, the first light blocking portion 170 may include a plurality of wire grids spaced apart from each other in the first direction X and extending along the second direction Y on the substrate 102. The first light blocking portion 170 allows linearly polarized light L1 perpendicular to the vibration of the wire grids in the first direction X to be transmitted, and reflects linearly polarized light L2 parallel to the vibration of the wire grids in the second direction Y.

[0149] However, the orientation of the wire grid is not limited to this. In other embodiments, the wire grids may be spaced apart from each other in the second direction Y and extend along the first direction X. In this case, the first light blocking portion 170 may reflect linearly polarized light L1 perpendicular to the first direction X of the wire grid vibration and transmit linearly polarized light L2 parallel to the second direction Y of the wire grid vibration. Alternatively, in other embodiments, the wire grids may extend along a third direction intersecting the first direction X and the second direction Y, and may be spaced apart from each other in a fourth direction perpendicular to the third direction.

[0150] To ensure polarization equivalent to that of polarizers in related technologies, the wire grid spacing P is preferably less than or equal to λ / 2. Considering the visible light wavelength range of 380 nm to 780 nm, the wire grid spacing P can be less than 200 nm, preferably 150 nm to 170 nm.

[0151] In this case, preferably, the width W of the wire grid can be equal to or less than half of the spacing P. For example, the width W can be 0.45 to 0.5 times the spacing P. Furthermore, preferably, the thickness T of the wire grid can be less than 50 nm.

[0152] As described above, the first light-blocking portion 170 can be formed of the same material as the second electrode 166 and formed on the same layer as the second electrode 166. In this case, the thickness T of the wire grid can be equal to the thickness of the second electrode 166, for example, 5 nm to 10 nm.

[0153] The first light-blocking portion 170 and the second electrode 166 can be formed by depositing a metal material on the substrate 102 to form a metal layer, and selectively removing the metal layer in the non-light-emitting region (NEA) by photolithography. In this case, a portion of the first light-blocking portion 170 can be connected to the second electrode 166 and formed integrally with the second electrode 166.

[0154] Refer again Figure 3 The encapsulation layer 180 can be disposed above the second electrode 166 and the first light-blocking portion 170. The encapsulation layer 180 can protect the light-emitting diode De from external moisture or oxygen.

[0155] Encapsulation layer 180 may have a stacked structure of a first encapsulation layer 182, a second encapsulation layer 184, and a third encapsulation layer 186, and the second encapsulation layer 184 may be disposed between the first encapsulation layer 182 and the third encapsulation layer 186. The first encapsulation layer 182 and the third encapsulation layer 186 may be formed of an inorganic insulating material, and the second encapsulation layer 184 may be formed of an organic insulating material. Here, the second encapsulation layer 184 may be a layer covering particles generated during the manufacturing process.

[0156] For example, the first encapsulation layer 182 and the third encapsulation layer 186 can be made of materials such as silicon oxide (SiO2). x ) or silicon nitride (SiN) x The second encapsulation layer 184 may be formed of an inorganic insulating material, such as acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin.

[0157] On the other hand, although not shown in the figure, a capping layer may be further provided between the second electrode 166 and the encapsulation layer 180. The capping layer may be formed of an insulating material with a relatively high refractive index. The wavelength of light propagating along the capping layer can be amplified by surface plasmon resonance. Therefore, the intensity of the peak can be enhanced, thereby improving the light efficiency in the display device. For example, the capping layer may be formed as a single layer of organic or inorganic layers, or it may be formed as an organic / inorganic stack.

[0158] Next, sensor unit 190 may be disposed on encapsulation layer 180 to detect external inputs such as touch. Sensor unit 190 may include a first sensor insulating layer 192, bridging electrode 193, a second sensor insulating layer 194, a third sensor insulating layer 195, sensor electrode 196, and a fourth sensor insulating layer 198.

[0159] Specifically, a first sensor insulating layer 192, serving as a sensor buffer layer, can be disposed on top of the encapsulation layer 180. The first sensor insulating layer 192 can be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the first sensor insulating layer 192 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0160] A bridging electrode 193 made of conductive material can be disposed on the first sensor insulating layer 192. The bridging electrode 193 can be disposed within the non-light-emitting region NEA. The bridging electrode 193 can overlap with the pixel defining layer 120 and can be spaced apart from the light-emitting diode De.

[0161] A second sensor insulating layer 194, serving as an auxiliary sensor buffer layer, and a third sensor insulating layer 195, serving as an interlayer insulating layer, can be disposed above the bridging electrode 193. The second sensor insulating layer 194 can be made of materials such as silicon nitride (SiN). x ), silicon oxide (SiO) x The third sensor insulating layer 195 can be formed of an inorganic insulating material such as silicon nitride oxide (SiON) or silicon nitride oxide (SiON), and can be formed of an organic insulating material such as photosensitive acrylic polymer (photoacrylic acid).

[0162] The sensor electrode 196 may be disposed on the third sensor insulating layer 195 and is formed of a conductive material. The sensor electrode 196 may include multiple patterns, and the multiple patterns may selectively contact the bridging electrode 193 through contact holes disposed in the second sensor insulating layer 194 and the third sensor insulating layer 195.

[0163] Therefore, multiple patterns of sensor electrodes 196 can be selectively connected in a first direction X and / or a second direction Y by bridging electrodes 193 to form a first sensing line extending substantially along the first direction X and a second sensing line extending substantially along the second direction Y.

[0164] A fourth sensor insulating layer 198, serving as a passivation layer for the sensor, can be disposed on the sensor electrode 196. The fourth sensor insulating layer 198 can be formed of an organic insulating material such as a photosensitive acrylic polymer (photoacrylic acid).

[0165] Therefore, in the display device 100A according to the first embodiment of the present disclosure, the sensor unit 190 can be disposed on the light-emitting diode De to detect the user's touch input and perform corresponding operations.

[0166] The color unit 200 may be disposed on the sensor unit 190. The color unit 200 may include a color buffer layer 210, a color filter layer 240, and a color protection layer 250. In addition, the color unit 200 may further include an alignment layer 220 and a second light blocking portion 230.

[0167] Specifically, the color buffer layer 210 can be disposed on the fourth sensor insulating layer 198 of the sensor unit 190. The color buffer layer 210 can be formed as a single layer or multiple layers of inorganic insulating material. For example, the inorganic insulating material of the color buffer layer 210 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ) or silicon nitride oxide (SiON).

[0168] The second light-blocking portion 230 can be disposed on the color buffer layer 210 within the non-emitting region NEA. The second light-blocking portion 230 can use a dichroic dye having an absorption spectrum in the visible light range, which is originally aligned with a reactive liquid crystal oriented in a specific direction, thereby achieving polarization.

[0169] The second light-blocking portion 230 may have an opening corresponding to the light-emitting region EA. The opening of the second light-blocking portion 230 may have a size substantially the same as the opening of the pixel-defining layer 120. That is, the second light-blocking portion 230 and the pixel-defining layer 120 may have the same area. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the opening of the second light-blocking portion 230 may have a different size than the opening of the pixel-defining layer 120. For example, to increase the viewing angle, the opening of the second light-blocking portion 230 may be larger than the opening of the pixel-defining layer 120.

[0170] In this case, the higher the degree of orientation, the higher the polarization. To improve the degree of orientation, the orientation layer 220 can have a shape and area that are substantially the same as the second light-blocking portion 230.

[0171] An alignment layer 220 can be formed by coating an organic insulating material, such as polyimide, onto the color buffer layer 210 and aligning its surface in a predetermined direction using a photo-alignment method with ultraviolet (UV) light. Here, the UV light can be applied only to the non-emitting region NEA.

[0172] Then, a mixture of reactive liquid crystal precursor and dichroic dye can be formed on the alignment layer 220, and UV light can be irradiated onto the non-light-emitting region NEA to strip and remove the alignment layer 220 and mixture that are not exposed to UV light within the light-emitting region EA. Therefore, the alignment layer 220 and the second light-blocking portion 230 can be formed within the non-light-emitting region NEA.

[0173] Reference Figure 5 The structure of the second light blocking part 230 will be described in more detail. Figure 5 This is a schematic diagram showing the structure of the second light-blocking portion according to an embodiment of the present disclosure, and showing the arrangement structure of the reactive liquid crystal precursor and dichroic dye before and after polymerization.

[0174] Reference Figure 5 According to embodiments of the present disclosure, the second light-blocking portion 230 may include a reactive liquid crystal 232 and a dichroic dye 234.

[0175] Reactive liquid crystal origin 232 is a monomer molecule comprising a liquid crystal origin exhibiting liquid crystal properties and polymerizable terminal functional groups, and having a liquid crystal phase. Reactive liquid crystal origin 232 can be used as an alignment host.

[0176] The reactive liquid crystal source 232 can have a smectic phase with a relatively high degree of orientation. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the reactive liquid crystal source 232 can have a nematic phase.

[0177] Reactive liquid crystal precursor 232 can be synthesized and then mixed with a dichroic dye 234 having liquid crystal properties. The dichroic dye 234 can include a variety of dichroic dyes that absorb light of different wavelengths. For example, the dichroic dye 234 can include two or more of yellow, cyan, and magenta dichroic dyes. However, the embodiments of this disclosure are not limited thereto.

[0178] Next, when the reactive liquid crystal precursor 232 is polymerized and cured by using UV light irradiation, the dichroic dye 234 can be oriented in the same direction as the orientation direction of the reactive liquid crystal precursor 232 due to its liquid crystal properties.

[0179] Therefore, the dichroic dye 234 can absorb light parallel to the orientation direction and transmit light perpendicular to the orientation direction. The absorption axis of the second light-blocking portion 230 can be parallel to the orientation direction of the dichroic dye 234, and the transmission axis of the second light-blocking portion 230 can be perpendicular to the orientation direction of the dichroic dye 234.

[0180] Refer again Figure 3 The color filter layer 240 can be disposed on top of the color buffer layer 210 within the luminescent region EA. The color filter layer 240 can also be partially disposed within the non-luminescent region NEA, and can overlap with and cover a portion of the second light blocking portion 230.

[0181] A color protection layer 250 may be disposed above the second light-blocking portion 230 and the color filter layer 240. The color protection layer 250 may cover and protect the color filter layer 240 and the second light-blocking portion 230. The color protection layer 250 may be formed of an organic insulating material such as a photosensitive acrylic polymer (photoacrylic acid).

[0182] Reference Figure 6 The following describes in detail the configuration according to the first embodiment of the present disclosure for preventing the reflection of external light within the non-light-emitting area NEA and the non-display area NDA of the display device 100A.

[0183] Figure 6 This is a schematic diagram showing the external light path of a display device according to a first embodiment of the present disclosure, and only the configuration affecting the path is shown.

[0184] Reference Figure 6 The first light blocking part 170 can be disposed on the pixel limiting layer 120, and the second light blocking part 230 can be disposed on the first light blocking part 170.

[0185] The pixel-defining layer 120 may have light absorption properties. The first light-blocking portion 170 may selectively reflect or transmit light. The second light-blocking portion 230 may selectively absorb or transmit light. Here, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may be aligned with each other and may be parallel to the first direction X.

[0186] However, the embodiments disclosed herein are not limited thereto. In other embodiments, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may be parallel to the second direction Y. For example, when the first direction X is defined as 0 degrees and the second direction Y is defined as 90 degrees, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may both be parallel to 0 degrees, or the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may both be parallel to 90 degrees. The transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may be parallel to the gate line or the data line.

[0187] Alternatively, in other embodiments, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may be parallel to each other at 45 degrees or 135 degrees. In this case, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may have an angle of 45 degrees relative to the gate line or data line.

[0188] In unpolarized external light, linearly polarized light L1 in the first direction X can be aligned with the transmission axis of the second light blocking portion 230, thereby passing through the second light blocking portion 230. Then, since the linearly polarized light L1 is aligned with the transmission axis of the first light blocking portion 170, the linearly polarized light L1 can pass through the first light blocking portion 170 and be absorbed by the pixel defining layer 120.

[0189] On the other hand, in unpolarized external light, since the linearly polarized light L2 in the second direction Y is aligned with the absorption axis of the second light blocking section 230, the linearly polarized light L2 can be absorbed by the second light blocking section 230. At this time, a portion of the linearly polarized light L2 may not be completely absorbed by the second light blocking section 230, thus reaching the first light blocking section 170. Since a portion of the linearly polarized light L2 is aligned with the reflection axis of the first light blocking section 170, a portion of the linearly polarized light L2 can be reflected by the first light blocking section 170, thus reaching the second light blocking section 230 again. Then, the portion of the linearly polarized light L2 reflected by the first light blocking section 170 can be aligned with the absorption axis of the second light blocking section 230 and can be absorbed by the second light blocking section 230.

[0190] Therefore, the display device 100A according to the first embodiment of the present disclosure may include a first light blocking portion 170 and a second light blocking portion 230 located on a pixel defining layer 120 having light absorption properties to prevent external light from being reflected and output, thereby preventing or minimizing the display quality degradation and / or leakage current problem of thin film transistors due to the reflection of external light.

[0191] In the display device 100A according to the first embodiment of this disclosure, if the positions of the first light-blocking portion 170 and the second light-blocking portion 230 are changed, that is, if the second light-blocking portion 230 is disposed between the pixel limiting layer 120 and the first light-blocking portion 170, the second light-blocking portion 230 may be damaged by subsequent processes. Furthermore, in unpolarized external light, linearly polarized light L2 in the second direction Y can be reflected by the first light-blocking portion 170, thus failing to prevent the reflection of external light.

[0192] Alternatively, if the first light-blocking portion 170 is configured to be the same as the second light-blocking portion 230, that is, if the first light-blocking portion 170 is configured to include a reactive liquid crystal source 232 and a dichroic dye 234, the first light-blocking portion 170 may be damaged during subsequent processes, resulting in a deterioration in its performance in preventing external light reflection and an increase in process and cost.

[0193] In addition, if the first light blocking part 170 is omitted, a portion of the light passing through the second light blocking part 230 may be reflected by the second electrode 166 above the pixel limiting layer 120 and then output to the outside, while another portion of the light may pass through the second electrode 166 and be absorbed by the pixel limiting layer 120, which may cause problems with external light reflection.

[0194] On the other hand, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 230 may not be aligned with each other. (Refer to...) Figure 7 A display device according to a second embodiment of the present disclosure is described.

[0195] Figure 7 This is a schematic cross-sectional view of a display device according to a second embodiment of the present disclosure. Except for the first light-blocking portion and the phase retardation layer, the display device according to the second embodiment of the present disclosure has a configuration substantially the same as or similar to that of the display device of the first embodiment. Components identical to those in the first embodiment are indicated by the same or similar reference numerals, and descriptions of identical components may be shortened or omitted.

[0196] Reference Figure 7 The display device 100B according to the second embodiment of the present disclosure may include a light-emitting diode De located on a substrate 102, and the encapsulation layer 180, sensor unit 190, color unit 200 and cover window 104 may be disposed on the light-emitting diode De.

[0197] The light-emitting diode De can be disposed in the light-emitting area EA corresponding to each sub-pixel SP of the display area DA. The pixel limiting layer 120, the first light blocking part 170B and the second light blocking part 230 can be disposed in the non-light-emitting area NEA and the non-display area NDA of the display area DA.

[0198] Here, the transmission axes of the first light-blocking portion 170B and the second light-blocking portion 230 may not be aligned with each other. Specifically, the transmission axis of the first light-blocking portion 170B may be perpendicular to the transmission axis of the second light-blocking portion 230.

[0199] A phase retardation layer 398 may be provided between the first light-blocking portion 170B and the second light-blocking portion 230. In this case, the phase retardation layer 398 may be a sensor passivation layer disposed on the sensor insulating layer 192 and the sensor electrode 196 and protecting the sensor electrode. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the phase retardation layer 398 may be added as a separate layer on or under the sensor unit 190.

[0200] For example, the phase retardation layer 398 can have a phase retardation of λ / 2. That is, the phase retardation layer 398 can be a half-wave plate (HWP) with a phase retardation of λ / 2 that changes the polarization direction of the incident light. Therefore, linearly polarized light passing through the phase retardation layer 398 can be converted into linearly polarized light rotated by 90 degrees.

[0201] The optical axis of the phase retardation layer 398 may not be aligned with the transmission axis of the first light blocking portion 170B and the second light blocking portion 230. More specifically, the optical axis of the phase retardation layer 398 may have an angle of 45 degrees relative to the transmission axis of the first light blocking portion 170B and the second light blocking portion 230.

[0202] The phase retardation layer 398 may include reactive liquid crystal origins (RM) 398a arranged in an organic material. For example, the organic material may be a photosensitive acrylic polymer (photoacrylic acid).

[0203] Reactive liquid crystal primordium 398a can have a major axis and a minor axis, and the major axis refractive index n can be the minor axis. e and short-axis refractive index n o Different refractive anisotropic materials. Major axis refractive index n e It can be greater than the short-axis refractive index n o For example, reactive liquid crystal atom 398a can have a long axis of about 10 Å to 60 Å and a short axis of about 5 Å to 10 Å. The long axis refractive index n e It can be 1.6 to 1.8, with a short-axis refractive index n. o It can be 1.4 to 1.5.

[0204] A phase retardation layer 398 can be formed by coating an organic material containing reactive liquid crystal molecules and irradiating it with polarized ultraviolet light to align and cure the reactive liquid crystal molecules in one direction.

[0205] On the other hand, the phase retardation layer 398 can be formed not only in the non-emitting region NEA and the non-display region NDA, but also in the emitting region EA. Since unpolarized light passes through the components in the emitting region EA, the phase retardation layer 398 may not affect the polarization direction of the light in the emitting region EA.

[0206] Reference Figure 8 The following describes in detail the configuration of the display device 100B according to the second embodiment of the present disclosure for preventing the reflection of external light inside and outside the non-light-emitting area NEA and the non-display area NDA.

[0207] Figure 8 This is a schematic diagram showing the external light path of a display device according to a second embodiment of the present disclosure, and only the configuration affecting the path is shown.

[0208] Reference Figure 8 The first light blocking part 170B can be disposed on the pixel limiting layer 120, the phase delay layer 398 can be disposed on the first light blocking part 170B, and the second light blocking part 230 can be disposed on the phase delay layer 398.

[0209] The pixel-defining layer 120 may have light absorption properties. The first light-blocking portion 170B can selectively reflect or transmit light. The phase retardation layer 398 can change the polarization direction of light. The second light-blocking portion 230 can selectively absorb or transmit light.

[0210] Here, the transmission axes of the first light-blocking portion 170B and the second light-blocking portion 230 can be set to be perpendicular to each other, and the optical axis of the phase retardation layer 398 can be set to have an angle of 45 degrees relative to the transmission axes of the first light-blocking portion 170B and the second light-blocking portion 230. In this case, the transmission axis of the first light-blocking portion 170B can be parallel to the second direction Y, and the transmission axis of the second light-blocking portion 230 can be parallel to the first direction X.

[0211] For example, when the first direction X is defined as 0 degrees and the second direction Y is defined as 90 degrees, the transmission axis of the first light-blocking portion 170B can be parallel to 90 degrees, the transmission axis of the second light-blocking portion 230 can be parallel to 0 degrees, and the optical axis of the phase retardation layer 398 can be parallel to 135 degrees. However, the embodiments of this disclosure are not limited thereto. In other embodiments, the optical axis of the phase retardation layer 398 can be parallel to 45 degrees.

[0212] Alternatively, in other embodiments, the transmission axis of the first light blocking portion 170B may be parallel to 0 degrees, the transmission axis of the second light blocking portion 230 may be parallel to 90 degrees, and the optical axis of the phase retardation layer 398 may be parallel to 45 degrees or 135 degrees.

[0213] In unpolarized external light, linearly polarized light L1 in the first direction X can align with the transmission axis of the second light-blocking portion 230, thus passing through the second light-blocking portion 230. Furthermore, the polarization direction of the linearly polarized light L1 can change to the second direction Y when passing through the phase retardation layer 398. Then, since the linearly polarized light L1 aligns with the transmission axis of the first light-blocking portion 170B, it can pass through the first light-blocking portion 170B and be absorbed by the pixel defining layer 120.

[0214] On the other hand, in unpolarized external light, since the linearly polarized light L2 in the second direction Y is aligned with the absorption axis of the second light blocking section 230, the linearly polarized light L2 can be absorbed by the second light blocking section 230. At this time, a portion of the linearly polarized light L2 may not be completely absorbed by the second light blocking section 230 and can change to a polarization direction in the first direction X when passing through the phase retardation layer 398, thereby reaching the first light blocking section 170B. Since a portion of the linearly polarized light L2 is aligned with the reflection axis of the first light blocking section 170B, a portion of the linearly polarized light L2 can be reflected by the first light blocking section 170B and can change to a polarization direction in the second direction Y when passing through the phase retardation layer 398, thereby reaching the second light blocking section 230 again. Then, a portion of the linearly polarized light L2 with a polarization direction in the second direction Y can be aligned with the absorption axis of the second light blocking section 230 and can be absorbed by the second light blocking section 230.

[0215] Therefore, the display device 100B according to the second embodiment of the present disclosure may include a first light blocking portion 170B and a second light blocking portion 230 having different transmission axes located on a pixel defining layer 120 having light absorption properties, and may further include a phase retardation layer 398 located between the first light blocking portion 170B and the second light blocking portion 230 to prevent external light from being reflected and output, thereby preventing or minimizing the display quality degradation and / or leakage current problem of the thin film transistor caused by the reflection of external light.

[0216] On the other hand, the second light-blocking part 230 can be disposed on the cover window 104. (Refer to...) Figure 9 A display device according to a third embodiment of the present disclosure is described.

[0217] Figure 9This is a schematic cross-sectional view of a display device according to a third embodiment of the present disclosure. Except for the second light-blocking portion, the display device according to the third embodiment of the present disclosure has a configuration substantially the same as or similar to that of the first and second embodiments. Components identical to those in the first and second embodiments are indicated by the same or similar reference numerals, and descriptions of identical components may be shortened or omitted.

[0218] Reference Figure 9 The display device 100C according to the third embodiment of the present disclosure may include a light-emitting diode De located on a substrate 102, and an encapsulation layer 180, a sensor unit 190, a color unit 200 and a cover window 104 may be disposed on the light-emitting diode De.

[0219] The light-emitting diode De can be disposed in the light-emitting area EA corresponding to each sub-pixel SP in the display area DA. The pixel limiting layer 120, the first light blocking part 170 and the second light blocking part 430 can be disposed in the non-light-emitting area NEA and the non-display area NDA of the display area DA.

[0220] At this time, the second light-blocking portion 430 can be disposed on the cover window 104. Specifically, the second light-blocking portion 430 can be disposed on the inner surface of the cover window 104. An alignment layer can be further disposed between the cover window 104 and the second light-blocking portion 430. The second light-blocking portion 430 can be spaced apart from the color filter layer 240.

[0221] Here, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 430 can be aligned with each other. In the display device 100C according to the third embodiment of this disclosure, the performance of preventing the reflection of external light can be compared with... Figure 6 Their performance in preventing the reflection of external light is basically the same.

[0222] In other embodiments, the transmission axes of the first light-blocking portion 170 and the second light-blocking portion 430 may not be aligned with each other. Specifically, the transmission axis of the first light-blocking portion 170 may be perpendicular to the transmission axis of the second light-blocking portion 430, and a phase retardation layer having a phase retardation of λ / 2 may be disposed between the first light-blocking portion 170 and the second light-blocking portion 430.

[0223] The display device according to embodiments of this disclosure can be applied to foldable display devices. Reference will be made to... Figures 10 to 12 This will be described.

[0224] Figure 10 This is a schematic exploded perspective view of a display module according to an embodiment of the present disclosure. Figure 11 This is a schematic cross-sectional view of a display module according to an embodiment of the present disclosure. Figure 12This is a schematic plan view of a display module according to an embodiment of the present disclosure. Figure 11 It shows along Figure 10 A sectional view taken from line E-E'.

[0225] Reference Figures 10 to 12 According to an embodiment of the present disclosure, the display module 500 may be a foldable display module, and the display module 500 along its folding axis A1-A1' may be the same as the second direction DR2.

[0226] A top frame TF may be provided at the top of the display module 500. The top frame TF may include a first top frame TF1 provided on one side of the folding axis A1-A1' and a second top frame TF2 provided on the other side of the folding axis A1-A1'. The top frame TF may be configured to cover the edge of the display device 510. The top frame TF can protect the display device 510 from external impacts. The top frame TF can form the bezel of the display device 510.

[0227] The cover layer CG can be placed below the top frame TF. The cover layer CG can be placed above the display device 510.

[0228] By placing the cover layer CG on top of the display device 510, the cover layer CG can be used to protect the components disposed under the cover layer CG from external influences. The cover layer CG can be the cover window 104 of the aforementioned embodiment.

[0229] Components may be disposed beneath the overlay CG. These components may include a display device 510 and a board PLT. The display device 510 may have a reference... Figure 1 , Figure 7 and Figure 9 The display devices 100A, 100B and 100C described have a basically the same structure.

[0230] The plate PLT may include various plates disposed below the display device 510 to support the display device 510. For example, one or more plates may include a back plate for supporting the display device 510, a top plate disposed below the back plate and formed of stainless steel (SUS), a bottom plate disposed below the top plate and formed of stainless steel (SUS) with a pattern on the folded portion, a heat sink for heat dissipation, and an intermediate plate for covering uneven surfaces caused by various components of the hinge assembly.

[0231] A slit pattern PTN can be formed in the plate PLT. The slit pattern PTN can be formed at a position corresponding to the folding area FA of the display device 510. The slit pattern PTN can be an etched portion with a slit shape formed in the plate PLT. For example, the plate PLT can be formed of a metal such as stainless steel (SUS). However, the rigid nature of the metal may cause problems when folding or unfolding the plate PLT. The slit pattern PTN can supplement the flexibility of the plate PLT.

[0232] An intermediate plate MST can be disposed below the components. The intermediate plate MST can support components located at a position higher than the intermediate plate MST. Furthermore, the hinge assembly 520 and the cover frames CF1 and CF2 can be disposed below the intermediate plate MST, and the upper surfaces of the hinge assembly 520 and the cover frames CF1 and CF2 can be uneven. The intermediate plate MST can flatten the uneven surfaces beneath it. The intermediate plate MST can be formed of a material such as plastic, polyimide, or metal to enhance the rigidity of the display module 500. For example, the intermediate plate MST can comprise aluminum or stainless steel (SUS), but embodiments of this disclosure are not limited thereto.

[0233] The intermediate plate MST may include a first intermediate plate portion MSTH1 disposed in a first non-folding region NFA1 and a second intermediate plate portion MSTH2 disposed in a second non-folding region NFA2.

[0234] The hinge assembly 520 can be disposed below the component. The hinge assembly 520 can be disposed below the folding area FA of the display device 510. The hinge assembly 520 can have an elongated shape along the folding axis A1-A1'. The hinge assembly 520 can perform a folding movement in which one side rotates relative to the folding axis A1-A1'.

[0235] Cover frames CF1 and CF2 can be disposed below the hinge assembly 520. Reception slots for accommodating a portion of the hinge assembly 520 can be formed on the upper surfaces of cover frames CF1 and CF2. Cover frames CF1 and CF2 may include a first cover frame CF1 and a second cover frame CF2 disposed on one side relative to the folding axis A1-A1'. Cover frames CF1 and CF2 can be housings defining the side and rear surfaces of the display module 500. Cover frames CF1 and CF2 can protect the display module from external impacts. Cover frames CF1 and CF2 can be integrated into the hinge assembly 520. Folding and unfolding of the display module 500 can be achieved by rotating cover frames CF1 and CF2.

[0236] Connecting members BM1, BM2, and BM3 may be further disposed between adjacent members MST, PLT, 510, and CG. The first connecting member BM1 may connect the intermediate plate portions MSTH1 and MSTH2 to the plate PLT within each of the non-folded regions NFA1 and NFA2. The second connecting member BM2 may connect the plate PLT and the display device 510. The third connecting member BM3 may connect the display device 510 and the cover layer CG.

[0237] The PLT board, the intermediate MST board, and the display device 510, which are combined with each other, can be mounted on the cover frames CF1 and CF2. The display module 500 can be folded and unfolded via the hinge assembly 520 provided on the cover frames CF1 and CF2.

[0238] Embodiments of this disclosure can provide a display device that can be applied to foldable products with a foldable display area and improves flexibility by omitting a polarizing plate.

[0239] Embodiments of this disclosure can provide a display device capable of having the same reflectivity and reflective visibility in both the display and non-display areas, and achieving a sense of unity by providing the same configuration in both the display and non-display areas to prevent the reflection of external light.

[0240] Embodiments of this disclosure can provide a display device that achieves a simplified structure by providing the same configuration in both the display area and the non-display area to prevent reflection of external light.

[0241] The embodiments disclosed herein can improve the reliability of the black dam because a first light-blocking portion and a second light-blocking portion with different light-blocking properties are disposed on the pixel defining layer to reduce the amount of black pigment in the pixel defining layer.

[0242] The embodiments of this disclosure can simplify the manufacturing process by forming the first light-blocking portion via the same process as the cathode.

[0243] Embodiments of this disclosure can minimize the reflection of external light and the light spots caused by the reflection of external light by providing a pixel-defining layer containing a black base material that absorbs and blocks external light in the non-light-emitting area of ​​the display area and the non-display area.

[0244] Embodiments of this disclosure can provide a low-reflection display device by including a pixel-defining layer comprising a black base material, thereby having the advantage of low power consumption.

[0245] It will be apparent to those skilled in the art that various modifications and variations can be made to the display device of this disclosure without departing from the technical spirit or scope of this disclosure. Therefore, this disclosure is intended to cover modifications and variations thereof, provided they fall within the scope of the appended claims and their equivalents.

Claims

1. A display device, comprising: A substrate having a light-emitting region and a non-light-emitting region; A light-emitting diode, wherein the light-emitting diode is located on the substrate within the light-emitting area, and includes a first electrode, a light-emitting layer, and a second electrode; A pixel defining layer, wherein the pixel defining layer is located on the substrate within the non-light-emitting area; A first light-blocking portion is located above the pixel defining layer; as well as The second light-blocking part is located above the first light-blocking part. The pixel-defining layer has light absorption properties, and Each of the first light-blocking portion and the second light-blocking portion transmits linearly polarized light along the transmission axis direction and reflects or absorbs linearly polarized light perpendicular to the transmission axis direction.

2. The display device according to claim 1, wherein, A display area, including the light-emitting area and the non-light-emitting area, and a non-display area located on at least one side of the display area are disposed on the substrate, and The pixel defining layer, the first light blocking portion, and the second light blocking portion are disposed in the non-light-emitting area and the non-display area.

3. The display device according to claim 1, wherein, The first light-blocking portion transmits linearly polarized light along the transmission axis and reflects linearly polarized light perpendicular to the transmission axis. The second light-blocking portion transmits linearly polarized light along the transmission axis and absorbs linearly polarized light perpendicular to the transmission axis.

4. The display device according to claim 3, wherein, The transmission axis direction of the first light blocking portion and the transmission axis direction of the second light blocking portion are parallel to each other.

5. The display device according to claim 3, further comprising a phase retardation layer located between the first light-blocking portion and the second light-blocking portion, in, The transmission axis direction of the first light blocking part and the transmission axis direction of the second light blocking part are not parallel to each other.

6. The display device according to claim 5 further includes a sensor electrode located between the first light-blocking portion and the second light-blocking portion. in, The phase delay layer is disposed between the sensor electrode and the second light blocking portion.

7. The display device according to claim 5, wherein, The transmission axis direction of the first light blocking portion and the transmission axis direction of the second light blocking portion are perpendicular to each other. The phase retardation layer has a phase retardation of λ / 2, and the optical axis of the phase retardation layer has an angle of 45 degrees with respect to the transmission axis direction of the first light blocking portion and the transmission axis direction of the second light blocking portion.

8. The display device according to claim 1, wherein, The first light blocking part is a linear grid polarizer.

9. The display device according to claim 8, wherein, The first light-blocking portion and the second electrode of the light-emitting diode are formed of the same material and on the same layer.

10. The display device according to claim 1, wherein, The second light-blocking portion includes a reactive liquid crystal source and a dichroic dye.

11. The display device of claim 1, further comprising a thin-film transistor located between the substrate and the light-emitting diode and electrically connected to the light-emitting diode. in, The thin-film transistor includes a semiconductor layer formed of an oxide semiconductor material.

12. The display device according to claim 1, further comprising a second transistor and a first transistor electrically connected to the light-emitting diode between the substrate and the light-emitting diode. in, The first transistor includes a first semiconductor layer, the second transistor includes a second semiconductor layer, and The first semiconductor layer and the second semiconductor layer contain different materials.

13. The display device according to claim 12, wherein, One of the first semiconductor layer and the second semiconductor layer comprises an oxide semiconductor material, and the remaining one of the first semiconductor layer and the second semiconductor layer comprises polycrystalline silicon.

14. The display device according to claim 12, wherein, The first semiconductor layer comprises an oxide semiconductor material, and the first transistor is a driving transistor connected to the light-emitting diode.

15. The display device according to claim 1, wherein, The pixel-defining layer is a black embankment.

16. The display device according to claim 1, further comprising: An encapsulation layer, which is located above the light-emitting diode and the pixel defining layer; as well as A color filter layer is located above the encapsulation layer and corresponds to the light-emitting diode.

17. The display device according to claim 16, further comprising a cover window located above the second light-blocking portion, in, The second light-blocking portion is disposed between the cover window and the color filter layer.

18. The display device according to claim 1, further comprising: An encapsulation layer, which is located above the light-emitting diode and the pixel defining layer; as well as A sensor unit, which is located on top of the encapsulation layer.

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