A liner of a reaction furnace of a lateral gas jet MOCVD apparatus

Abstract

The application discloses a kind of inner container of transverse gas injection MOCVD equipment reaction furnace, it is related to MOCVD equipment technical field, including reaction cavity, nozzle, upper channel, middle channel and lower channel;The application is realized by setting inner container structure fast and uniform transport under normal pressure, the conical guide vane in upper channel makes gas experience multiple cross-section changes and flow direction turning, produce transverse flow and secondary flow, eliminate speed peak and concentration gradient, cooperate with hollow heat insulation baffle to block interlayer thermal radiation, prevent unintended pre-reaction, rectifier column makes three layers of gas fully mixed and keeps laminar flow characteristics, micro-groove guides airflow directional flow to reduce turbulence, reaction gas is limited in the periphery of substrate and flows quickly, ensure that reaction gas is transported to the surface of substrate quickly under normal pressure, avoid the problem that carbon impurity is incorporated due to low pressure growth, so as to grow high-quality compound semiconductor epitaxial material.

Description

Technical Field

[0001] This invention relates to the field of MOCVD equipment technology, and more specifically to the inner liner of a transverse gas jet MOCVD equipment reactor. Background Technology

[0002] MOCVD (Metal-Organic Chemical Vapor Deposition) is a key technology for preparing compound semiconductor epitaxial materials, with wide applications in LED lighting, lasers, high-frequency microwave devices, and power electronic devices. This technology transports group III metal-organic sources and group V hydride source gases to a heated substrate surface, causing a chemical reaction that achieves atomic-level epitaxial crystal growth. MOCVD can precisely control the thickness, composition, and doping concentration of the epitaxial layer, enabling the growth of various compound semiconductor materials such as GaN, GaAs, InP, and AlGaAs, as well as their multi-element alloys. It is hailed as one of the core supporting technologies of modern optoelectronics and microelectronics industries.

[0003] To rapidly deliver reactant gases to the substrate, existing MOCVD reaction chambers typically employ low-pressure growth methods. By reducing chamber pressure, the mean free path of gas molecules is increased, thereby improving diffusion rate and transport efficiency. However, the low-pressure environment significantly reduces the partial pressure of gaseous species within the reaction chamber, altering the thermodynamic and kinetic equilibrium conditions. Under this environment, the pyrolysis path of organometallic sources (such as trimethylgallium) is deflected, and carbon removal reactions (such as reactions with hydrogen) are suppressed. Consequently, carbon atoms or carbon clusters generated by pyrolysis cannot be effectively removed, resulting in a large amount of carbon impurities being incorporated into the grown GaN crystal. These carbon impurities form deep-level defects in the lattice, severely affecting the optical and electrical properties of the material. This leads to a significant decrease in key performance indicators such as luminous efficiency and carrier mobility of the epitaxial wafer. Therefore, while the low-pressure growth method solves the gas transport rate problem, it comes at the cost of epitaxial quality, making it difficult to grow high-quality compound semiconductor epitaxial materials that meet the requirements of high-end devices. Summary of the Invention

[0004] The purpose of this invention is to provide an inner liner for a transverse gas jet MOCVD reactor to solve the problem in the prior art that although low-pressure growth has fast transport, it results in high carbon impurities and makes it difficult to grow high-quality epitaxy.

[0005] To achieve the above objectives, the present invention provides the following technical solution: an inner liner of a transverse gas jet MOCVD equipment reactor, comprising a reaction chamber, a nozzle, an upper flow channel, a middle flow channel, and a lower flow channel. The nozzle is disposed on one side wall of the reaction chamber, the upper flow channel is fixed to one side wall of the reaction chamber and communicates with the nozzle, the lower flow channel is fixed to the opposite side wall of the reaction chamber, the middle flow channel is disposed between the upper flow channel and the lower flow channel, the inlet of the middle flow channel is communicated with the outlet of the upper flow channel, and the outlet of the middle flow channel is communicated with the inlet of the lower flow channel.

[0006] The upper flow channel is provided with three independent channels from top to bottom. A partition is provided between two adjacent channels. A first conical guide plate and a second conical guide plate are provided in each channel along the airflow direction. The tip of the first conical guide plate faces the upstream direction of the airflow, and the tip of the second conical guide plate faces the downstream direction of the airflow. Each channel has at least two flow direction changes after passing through the first and second conical guide plates. The outlet cross-sectional area of ​​each channel is smaller than its inlet cross-sectional area.

[0007] The middle channel includes a cover plate and a bottom plate. The cover plate covers the bottom plate, and an airflow channel is formed between the cover plate and the bottom plate. A flow straightening column is provided on the upstream side surface of the bottom plate, and a microgroove is provided on the downstream side surface of the bottom plate.

[0008] Furthermore, each layer of the channel has a gradually shrinking cross-sectional area section and a gradually expanding cross-sectional area section at the first conical guide plate, and each layer of the channel has a gradually shrinking cross-sectional area section and a gradually expanding cross-sectional area section at the second conical guide plate.

[0009] Furthermore, the partition is a hollow structure, and the interior of the partition is filled with a low thermal conductivity insulating material.

[0010] Furthermore, an extension plate is provided at the upstream end of the cover plate, the extension plate covers the top and side surfaces of the upper flow channel outlet, and a lower extension is provided at the bottom surface of the upper flow channel outlet, the lower extension being attached to the bottom surface of the base plate.

[0011] Furthermore, the rectifier column is a cylindrical protruding structure, and at least two columns of the rectifier column are arranged along the airflow direction, with adjacent columns of the rectifier column arranged alternately in the airflow direction.

[0012] Furthermore, the microgrooves are parallel grooves extending along the airflow direction, and multiple microgrooves are arranged in an array.

[0013] Furthermore, a graphite disk is disposed below the base plate, a substrate is disposed on the upper surface of the graphite disk, a spiral heating wire is disposed at the bottom of the graphite disk, and the upper surface of the base plate and the upper surface of the substrate are coplanar.

[0014] Furthermore, a sealing gasket is provided between the upper flow channel and the side wall of the reaction chamber, and the sealing gasket is made of an elastic material.

[0015] Furthermore, the inlet cross-sectional area of ​​the lower channel is larger than the outlet cross-sectional area of ​​the middle channel, and the outlet of the middle channel extends into the inlet of the lower channel.

[0016] Compared with existing technologies, the present invention provides an inner liner for a transverse gas jet MOCVD reactor. By setting an inner liner structure consisting of an upper flow channel, a middle flow channel, and a lower flow channel, it achieves rapid and uniform transport of reaction gases under normal pressure. Two conical guide plates in each layer of the upper flow channel cause the gas to undergo multiple cross-sectional changes, and at least two flow direction changes are set in each layer of the channel. During the turning process, the gas generates transverse flow and secondary flow, which promotes the redistribution of the gas flow within the channel cross-section, effectively eliminating velocity peaks and concentration gradients. In conjunction with hollow heat insulation baffles to block interlayer heat radiation and prevent unintended pre-reactions, the rectifier column ensures that the three layers of gas are fully mixed and maintain laminar flow characteristics. Microgrooves guide the directional flow of gas to reduce turbulence. The reaction gas is confined to flow rapidly around the substrate, ensuring rapid transport of reaction gas to the substrate surface under normal pressure conditions. This avoids the problem of carbon impurity incorporation caused by low-pressure growth, thereby growing high-quality compound semiconductor epitaxial materials. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this invention. For those skilled in the art, other drawings can be obtained based on these drawings.

[0018] Figure 1 This is a schematic diagram of the overall structure provided for an embodiment of the present invention;

[0019] Figure 2 A cross-sectional view of the inner liner provided in an embodiment of the present invention;

[0020] Figure 3 A cross-sectional view of the flow channel provided in an embodiment of the present invention;

[0021] Figure 4 This is an exploded view of the inner liner provided in an embodiment of the present invention.

[0022] Explanation of reference numerals in the attached figures:

[0023] 1. Reaction chamber; 2. Nozzle; 3. Upper flow channel; 301. Baffle plate; 302. Channel; 303. First conical guide plate; 304. Second conical guide plate; 4. Middle flow channel; 401. Cover plate; 402. Bottom plate; 403. Extension plate; 5. Lower flow channel; 6. Sealing gasket; 7. Graphite disk; 8. Substrate; 9. Spiral heating wire; 10. Rectifying column; 11. Microgroove. Detailed Implementation

[0024] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0025] As attached Figure 1 To be continued Figure 4 As shown:

[0026] Example 1:

[0027] This invention provides an inner liner for a transverse gas jet MOCVD reactor, comprising a reaction chamber 1, a nozzle 2, an upper flow channel 3, a middle flow channel 4, and a lower flow channel 5. The nozzle 2 is disposed on one side wall of the reaction chamber 1. The upper flow channel 3 is fixed to one side wall of the reaction chamber 1 and communicates with the nozzle 2. The lower flow channel 5 is fixed to the opposite side wall of the reaction chamber 1. The middle flow channel 4 is disposed between the upper flow channel 3 and the lower flow channel 5. The inlet of the middle flow channel 4 communicates with the outlet of the upper flow channel 3, and the outlet of the middle flow channel 4 communicates with the inlet of the lower flow channel 5. The reaction chamber 1 provides space and installation location for the inner liner. An upper flow channel 3 and a lower flow channel 5 are installed on opposite side walls of the reaction chamber 1, respectively. The reaction chamber 1 provides a sealed environment for the entire reaction process. Three nozzles 2 are located on one side wall of the reaction chamber 1 and are arranged vertically. Each nozzle 2 corresponds to one of the three channels 302 of the upper flow channel 3. The nozzles 2 are used to inject external reaction gas into each channel 302 of the upper flow channel 3. The upper flow channel 3 is fixed to the reaction chamber 1. The upper flow channel 3 is located on one side wall of the reaction chamber 1 and is connected to the nozzle 2. It receives the reaction gas from the nozzle 2 and adjusts the gas cross-section and guides its flow direction. The middle flow channel 4 is located between the upper flow channel 3 and the lower flow channel 5. The inlet of the middle flow channel 4 is connected to the outlet of the upper flow channel 3, and the outlet of the middle flow channel 4 is connected to the inlet of the lower flow channel 5. The middle flow channel 4 receives the gas from the upper flow channel 3 and mixes the three layers of gas, then uniformly guides the mixture to the surface of the substrate 8. The lower flow channel 5 is fixed to the opposite side wall of the reaction chamber 1. The inlet of flow channel 5 is connected to the outlet of middle flow channel 4. The lower flow channel 5 is used to discharge the gas after reaction from the reaction chamber 1. The lower flow channel 5 is fixed on the side wall opposite to the side wall of the upper flow channel 3. The cross-sectional area of ​​the inlet of the lower flow channel 5 is larger than the cross-sectional area of ​​the outlet of the middle flow channel 4. The outlet of the middle flow channel 4 extends slightly into the inlet of the lower flow channel 5. The reaction gas is directly discharged into the lower flow channel 5, ensuring smooth exhaust. The purging gas between the inner liner and the reaction chamber 1 is discharged from the lower flow channel 5 through the gap between the middle flow channel 4 and the lower flow channel 5.

[0028] The upper flow channel 3 has three independent channels 302 arranged sequentially from top to bottom. A partition 301 is installed between adjacent channels 302. Within each channel 302, a first conical guide plate 303 and a second conical guide plate 304 are arranged sequentially along the airflow direction. The tip of the first conical guide plate 303 faces upstream of the airflow, and the tip of the second conical guide plate 304 faces downstream of the airflow. Each channel 302 has at least two flow direction changes after passing through the first and second conical guide plates 303 and 304. The outlet cross-sectional area of ​​each channel 302 is smaller than its inlet cross-sectional area. The partition 301 is located between adjacent channels 302 to isolate them and prevent crosstalk between the gases during flow. The partition 301 has a hollow structure and is filled with aerogel to reduce heat radiation transfer between the reactant gases. There are three channels 302 arranged sequentially from top to bottom. Each channel 302 is independent, allowing the reaction gas to flow independently. The three channels 302 are connected to three nozzles 2 in a one-to-one correspondence. Each channel 302 has a first conical guide plate 303 and a second conical guide plate 304 arranged sequentially along the airflow direction. The conical guide plates are used to change the cross-sectional area of ​​the channel 302, causing the gas to undergo a contraction and diffusion process as it flows through. The tip of the first conical guide plate 303 faces the upstream direction of the airflow and is located near the inlet section, so that the cross-sectional area of ​​the channel 302 gradually contracts and then gradually expands. The tip of the second conical guide plate 304 faces the downstream direction of the airflow and is located downstream of the first conical guide plate 303, so that the cross-sectional area of ​​the channel 302 gradually contracts and then gradually expands again. Each channel 302 has at least two flow direction changes after passing through the first conical guide plate 303 and the second conical guide plate 304. The outlet cross-sectional area of ​​each channel 302 is smaller than its inlet cross-sectional area, so that the gas maintains an appropriate flow velocity when it flows out.

[0029] The flow channel 4 includes a cover plate 401 and a bottom plate 402. The cover plate 401 covers the bottom plate 402, forming an airflow channel between the cover plate 401 and the bottom plate 402. A flow straightening column 10 is provided on the upstream surface of the bottom plate 402, and a microgroove 11 is provided on the downstream surface of the bottom plate 402. The cover plate 401 is positioned above and covers the bottom plate 402. The cover plate 401, together with the bottom plate 402, encloses the airflow channel, limiting the gas flow space. The bottom plate 402 is positioned below the cover plate 401, and the bottom plate 402 is used to support and guide the reaction gas to flow along its surface. The rectifying column 10 is disposed on the upstream side surface of the base plate 402. The rectifying column 10 is a cylindrical protruding structure with at least two rows arranged along the airflow direction. The two adjacent rows of rectifying columns 10 are staggered in the airflow direction. The rectifying column 10 is used to cause the flowing gas to generate local splitting and remixing, so as to achieve full mixing of the three layers of gas. The micro trench 11 is disposed on the downstream side surface of the base plate 402. The micro trench 11 is a parallel groove extending along the airflow direction, with multiple grooves arranged in an array. The micro trench 11 is used to guide the reaction gas to flow directionally along the surface of the base plate 402, reducing the turbulence and vortex of the gas on the surface of the substrate 8.

[0030] Each channel 302 has a gradually shrinking cross-sectional area section and a gradually expanding cross-sectional area section at the first conical guide plate 303, and each channel 302 has a gradually shrinking cross-sectional area section and a gradually expanding cross-sectional area section at the second conical guide plate 304.

[0031] An extension plate 403 is provided at the upstream end of the cover plate 401. The extension plate 403 covers the top and side surfaces of the outlet of the upper flow channel 3. A lower extension is provided at the bottom surface of the outlet of the upper flow channel 3. The lower extension is attached to the bottom surface of the base plate 402. The extension plate 403 is provided at the upstream end of the cover plate 401 and covers the top and side surfaces of the outlet of the upper flow channel 3. It is used to prevent the reaction gas from leaking upward and sideways from the attachment part. The lower extension is used to prevent the reaction gas from leaking downward from the attachment part.

[0032] A graphite disk 7 is disposed below the base plate 402, and a substrate 8 is disposed on the upper surface of the graphite disk 7. A spiral heating wire 9 is disposed at the bottom of the graphite disk 7. The upper surface of the base plate 402 and the upper surface of the substrate 8 are coplanar. The graphite disk 7 is used to support the substrate 8 and provide uniform heat conduction to the substrate 8. The substrate 8 is disposed on the upper surface of the graphite disk 7. The substrate 8 is a substrate for epitaxial growth of compound semiconductors. The reaction gas performs the epitaxial growth reaction on the surface of the substrate 8. The spiral heating wire 9 is used to generate heat after being energized. The heat is uniformly transferred to the substrate 8 through the graphite disk 7 to provide the required temperature environment for epitaxial growth.

[0033] A sealing gasket 6 is provided between the upper flow channel 3 and the side wall of the reaction chamber 1. The sealing gasket 6 is made of an elastic material (such as a temperature-resistant and corrosion-resistant resin or ceramic material) and is used to fill the gap between the upper flow channel 3 and the side wall of the reaction chamber 1 to achieve a sealed connection between the two.

[0034] The inlet cross-sectional area of ​​the lower channel 5 is larger than the outlet cross-sectional area of ​​the middle channel 4, and the outlet of the middle channel 4 extends into the inlet of the lower channel 5.

[0035] Working principle: The reaction gas enters the three independent channels 302 of the upper flow channel 3 through three nozzles 2 via an external gas supply system.

[0036] Within each channel 302, the gas first passes through the first conical guide plate 303. Since the tip of the first conical guide plate 303 faces the upstream direction of the airflow, the cross-sectional area of ​​the channel 302 gradually contracts as the gas flows through, accelerating the gas. Then, the cross-sectional area gradually expands, decelerating and homogenizing the gas. The gas then passes through the second conical guide plate 304. Since the tip of the second conical guide plate 304 faces the downstream direction of the airflow, the gas again undergoes a process of gradually contracting and then gradually expanding the cross-sectional area, achieving a second acceleration and homogenization. Ultimately, a high degree of uniformity is achieved in terms of velocity and concentration distribution. Subsequently, the gas flows out from the outlet of the upper channel 3 after being turned at at least two points in the channel 302.

[0037] The homogenized three-layer gas enters the middle channel 4 from the outlet of the upper channel 3. The three-layer gas converges at the inlet of the middle channel 4 and then flows through the region of the rectifier column 10 on the upstream side of the base plate 402. Since the adjacent two columns of rectifier columns 10 are staggered in the airflow direction, the gas generates local splitting and remixing when flowing through each column of rectifier columns 10. After passing through multiple columns of staggered rectifier columns 10, the three-layer gas has been fully mixed before reaching the surface of the substrate 8, and the turbulence intensity of the airflow is controlled within a suitable range.

[0038] After being mixed evenly, the reaction gas flows over the surface of the substrate 8. Under the heat transferred by the spiral heating wire 9 through the graphite disk 7, the reaction gas undergoes a chemical reaction on the surface of the substrate 8, resulting in the epitaxial growth of the compound semiconductor. The upper surface of the base plate 402 is coplanar with the upper surface of the substrate 8, ensuring a smooth transition of the airflow and avoiding airflow disturbance at the step. On the downstream side of the substrate 8, the microgrooves 11 on the surface of the base plate 402 guide the reaction gas to flow directionally along the surface of the base plate 402, reducing turbulence and vortices of the gas on the surface of the substrate 8.

[0039] After the reaction, the gas enters the lower channel 5 through the outlet of the middle channel 4. The lower channel 5 is fixed on the opposite side wall to the upper channel 3. The outlet of the middle channel 4 extends slightly into the inlet of the lower channel 5. The reaction gas is directly discharged into the lower channel 5. Since the inlet cross-sectional area of ​​the lower channel 5 is larger than the outlet cross-sectional area of ​​the middle channel 4, the gas is buffered when entering the lower channel 5 and discharged smoothly from the reaction chamber 1. The purging gas between the inner liner and the reaction chamber 1 is also discharged from the lower channel 5 through the gap between the middle channel 4 and the lower channel 5.

[0040] Throughout the process, the sealing gasket 6 between the upper flow channel 3 and the side wall of the reaction chamber 1 ensures the airtightness of the upper flow channel 3 and the reaction chamber 1. The outlet of the upper flow channel 3 and the inlet edge of the middle flow channel 4 are interference-fitted. Combined with the extension plate 403 at the upstream end of the cover plate 401 covering the top and side surfaces of the outlet of the upper flow channel 3, and the lower extension of the bottom surface of the outlet of the upper flow channel 3 fitting the bottom surface of the bottom plate 402, multiple seals are achieved at the joint between the upper flow channel 3 and the middle flow channel 4. The hollow partition 301 between two adjacent channels 302 is filled with aerogel, which reduces the heat radiation transfer between the reaction gases in each layer and prevents the gases in each layer from undergoing unexpected pre-reactions before entering the middle flow channel 4.

[0041] Example 2:

[0042] This embodiment is basically the same as the previous embodiment, except that the partition 301 is a hollow structure and the interior of the partition 301 is filled with ceramic fibers, replacing the aerogel in the first embodiment. The ceramic fibers also have low thermal conductivity, which can effectively reduce the heat radiation transfer between the channels 302 of each layer. Compared with aerogel, ceramic fibers have higher temperature resistance and lower cost, and are suitable for epitaxial processes with higher growth temperatures (such as above 1200℃).

[0043] Working principle: The working principle is basically the same as that of Example 1. The difference is that the partition 301 is filled with ceramic fiber, which can still maintain excellent heat insulation performance under high temperature process conditions and effectively prevent thermal interference between the gases in each layer.

[0044] The foregoing has only described certain exemplary embodiments of the present invention by way of illustration. Undoubtedly, those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the foregoing drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. An inner liner of a transverse gas jet MOCVD equipment reactor, comprising a reaction chamber (1), a nozzle (2), an upper flow channel (3), a middle flow channel (4), and a lower flow channel (5), characterized in that, The nozzle (2) is disposed on one side wall of the reaction chamber (1), the upper flow channel (3) is fixed to one side wall of the reaction chamber (1) and communicates with the nozzle (2), the lower flow channel (5) is fixed to the opposite side wall of the reaction chamber (1), the middle flow channel (4) is disposed between the upper flow channel (3) and the lower flow channel (5), the inlet of the middle flow channel (4) is communicated with the outlet of the upper flow channel (3), and the outlet of the middle flow channel (4) is communicated with the inlet of the lower flow channel (5); The upper flow channel (3) is provided with three independent channels (302) from top to bottom. A partition (301) is provided between two adjacent channels (302). A first conical guide plate (303) and a second conical guide plate (304) are arranged in sequence along the airflow direction in each channel (302). The tip of the first conical guide plate (303) faces the upstream direction of the airflow, and the tip of the second conical guide plate (304) faces the downstream direction of the airflow. Each channel (302) has at least two flow direction changes after passing through the first conical guide plate (303) and the second conical guide plate (304). The outlet cross-sectional area of ​​each channel (302) is smaller than its inlet cross-sectional area. The middle channel (4) includes a cover plate (401) and a bottom plate (402). The cover plate (401) covers the bottom plate (402), and an airflow channel is formed between the cover plate (401) and the bottom plate (402). A flow straightening column (10) is provided on the upstream side surface of the bottom plate (402), and a micro-groove (11) is provided on the downstream side surface of the bottom plate (402).

2. The inner liner of the reactor in a transverse gas jet MOCVD equipment according to claim 1, characterized in that, Each layer of the channel (302) has a gradually shrinking section and a gradually expanding section at the first conical guide plate (303), and each layer of the channel (302) has a gradually shrinking section and a gradually expanding section at the second conical guide plate (304).

3. The inner liner of the reactor in a transverse gas jet MOCVD equipment according to claim 1, characterized in that, The partition (301) has a hollow structure, and the interior of the partition (301) is filled with a low thermal conductivity insulation material.

4. The inner liner of the reactor in a transverse gas jet MOCVD equipment according to claim 1, characterized in that, An extension plate (403) is provided at the upstream end of the cover plate (401). The extension plate (403) covers the top and side surfaces of the outlet of the upper flow channel (3). A lower extension is provided at the bottom surface of the outlet of the upper flow channel (3). The lower extension is attached to the bottom surface of the bottom plate (402).

5. The inner liner of a transverse gas jet MOCVD equipment reactor according to claim 1, characterized in that, The rectifier column (10) is a cylindrical protruding structure. At least two columns of the rectifier column (10) are arranged along the airflow direction, and adjacent columns of the rectifier column (10) are staggered in the airflow direction.

6. The inner liner of a transverse gas jet MOCVD reactor according to claim 1, characterized in that, The microgrooves (11) are parallel grooves extending along the airflow direction, and multiple microgrooves (11) are arranged in an array.

7. The inner liner of a transverse gas jet MOCVD equipment reactor according to claim 1, characterized in that, A graphite disk (7) is provided below the base plate (402), a substrate (8) is provided on the upper surface of the graphite disk (7), and a spiral heating wire (9) is provided at the bottom of the graphite disk (7). The upper surface of the base plate (402) and the upper surface of the substrate (8) are coplanar.

8. The inner liner of a transverse gas jet MOCVD equipment reactor according to claim 1, characterized in that, A sealing gasket (6) is provided between the upper flow channel (3) and the side wall of the reaction chamber (1), and the sealing gasket (6) is made of elastic material.

9. The inner liner of a transverse gas jet MOCVD equipment reactor according to claim 1, characterized in that, The inlet cross-sectional area of ​​the lower channel (5) is larger than the outlet cross-sectional area of ​​the middle channel (4), and the outlet of the middle channel (4) extends into the inlet of the lower channel (5).

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