Electronic device and method of manufacturing an electronic device

Abstract

Electronic devices and methods of manufacturing electronic devices. In one example, an electronic device includes a first passivation structure including a plurality of protrusions on an upper side of the first passivation structure. A first trace can be embedded in the first passivation structure and recessed from the protrusions. A second trace is disposed on the protrusions, and a second passivation structure is disposed over the first passivation structure, the first trace, and the second trace. A first metal barrier can be disposed between the first trace and the first passivation structure. A second metal barrier is disposed between the second trace and the first passivation structure. A first inorganic barrier is disposed over an upper side of the first trace, on sidewalls of the protrusions, and between the second trace and the second passivation structure. Other examples and related methods are also disclosed herein.

Description

Technical Field

[0001] This disclosure generally relates to electronic devices, and more specifically, to electronic devices and methods of manufacturing electronic devices. Background Technology

[0002] Existing electronic packaging technologies and methods for forming electronic packages have shortcomings, leading to problems such as excessively high costs, reduced reliability, relatively low performance, or excessively large package sizes. By comparing these methods with this disclosure and referring to the accompanying drawings, those skilled in the art will understand other limitations and disadvantages of conventional and traditional methods. Summary of the Invention

[0003] An example electronic device includes a first passivation structure, a first inorganic barrier above the first passivation structure, and a first metallic barrier disposed above the first inorganic barrier. A conductive structure may be disposed above the first metallic barrier. A second metallic barrier may be disposed above the conductive structure, and a second inorganic barrier may be disposed above the second metallic barrier.

[0004] In various examples, the lateral end of the second metal barrier terminates at a distance of approximately 0.25 micrometers (μm) to approximately 1.5 μm outside the coverage area of ​​the conductive structure. The first and second metal barriers may surround the conductive structure. The first and second inorganic barriers may surround the first and second metal barriers. The second inorganic barrier contacts the lateral end of the second metal barrier outside the coverage area of ​​the conductive structure. The conductive structure includes traces, and the second inorganic barrier extends continuously between adjacent traces. The first metal barrier comprises titanium, and the second metal barrier comprises nickel. The bottom side of the second metal barrier contacts the top side of the first metal barrier.

[0005] Another example electronic device may include a first passivation structure comprising a plurality of protrusions on its upper side. A first trace may be embedded in the first passivation structure and recessed from the protrusions. A second trace is disposed on the protrusions, and the second passivation structure is disposed above the first passivation structure, the first trace, and the second trace. A first metal stop may be disposed between the first trace and the first passivation structure. A second metal stop is disposed between the second trace and the first passivation structure. A first inorganic stop is disposed above the upper side of the first trace, on the sidewall of the protrusion, and between the second trace and the second passivation structure.

[0006] In various examples, the first metallic barrier includes titanium, and the first inorganic barrier includes at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), or silicon oxynitride (SiON). The electronic device may include a conductive via in a first passivation structure, and a second passivation structure above the first inorganic barrier and the conductive via. The second passivation structure contacts the sidewall of the first passivation structure above the conductive via. The second passivation structure contacts the top side of the conductive via. The first inorganic barrier contacts the top side of the conductive via. The second trace intersects the first trace laterally. The electronic device may include a second passivation structure above the first inorganic barrier, a third trace disposed in the second passivation structure, a third metallic barrier between the third trace and the second passivation structure, and a second inorganic barrier above the third trace. The third trace is recessed from the upper side of the second passivation structure, and the third trace is vertically aligned with the first trace.

[0007] In another example electronic device, the signal distribution structure includes a first passivation structure and a conductive structure. The conductive structure includes a conductive via extending through the first passivation structure, and the tip of the conductive via protrudes from the first passivation structure at a first side of the signal distribution structure. Electronic components can be coupled to a second side of the signal distribution structure opposite to the first side. External interconnects can be coupled to the tip of the conductive via.

[0008] In various examples, the conductive structure includes a plurality of first traces embedded in a first passivation structure. The conductive structure may include the first traces disposed above the first passivation structure. A second passivation structure may be disposed above the plurality of first traces and the first passivation structure.

[0009] Electronic devices and related methods may include oxidation-resistant conductive elements. In some examples, conductive elements such as traces or pads may be surrounded by a barrier. For example, a titanium barrier layer may completely surround the cross-section of a copper conductive element, thereby creating a four-sided or full-sided metallic barrier structure. In some examples, an inorganic material may completely surround the cross-section of the conductive element, thereby creating a four-sided or full-sided non-metallic barrier. In some examples, a four-sided or full-sided barrier may include both metallic and inorganic portions. For example, the lower side of the barrier may include titanium, and the upper side of the barrier may include an inorganic material.

[0010] The barrier can include two-piece or multi-piece barrier structures. For example, a barrier layer can be formed, and then a conductive element with exposed sides can be formed over the barrier layer, and then a second barrier layer can be formed over the exposed sides of the conductive element to surround the conductive element. In some examples, the barrier layer described herein can be applied to an embedded trace (ETR) or a conductor made using a semi-additive process (SAP).

[0011] In some examples, four-sided barriers (e.g., surrounding the conductive element) can reduce oxidation compared to three-sided barriers (e.g., one side of the conductive element is exposed from the barrier). Examples of four-sided barriers can also mitigate the increase in resistance over time that may be due to oxidation of the conductive element. For example, a four-sided barrier can limit the increase in resistance of the conductive element over time compared to a conductive element without a barrier. Therefore, the reliability of electronic devices can be improved by using four-sided barriers. Density can also be increased in hybrid devices containing trace elements of SAP and ETR.

[0012] Some examples may include circular vias formed within a passivation structure, which are then exposed as a portion of the passivation structure is removed. The removal process may include plasma etching, dry etching, or laser debonding steps to remove the glass or passivated barrier. O2 plasma removal can be used to expose the circular ends of the vias. The resulting vias can have a circular geometry protruding from the passivation, thereby reducing the incidence of plating voids or sputtering voids. Attached Figure Description

[0013] Figure 1A A cross-sectional view of an example electronic device is shown.

[0014] Figure 1B A cross-sectional view of a detailed area of ​​the example electronic device is shown.

[0015] Figures 2A to 2T A cross-sectional diagram illustrates an example method for manufacturing electronic devices.

[0016] Figure 2 QA It shows Figure 2Q Detailed view of the through hole in area A.

[0017] Figures 3A to 3E A cross-sectional diagram illustrates an example method for manufacturing electronic devices.

[0018] Figure 3CA It shows Figure 3C Detailed view of the through hole in area A.

[0019] Figures 4A to 4C A cross-sectional view of an example electronic device is shown.

[0020] Figures 5A to 5L A cross-sectional diagram illustrates an example method for manufacturing electronic devices.

[0021] Figures 6A to 6H A cross-sectional diagram illustrates an example method for manufacturing electronic devices.

[0022] Figure 7A and Figure 7BA cross-sectional view of an example electronic device is shown.

[0023] Figures 8A to 8L An example method for manufacturing electronic devices is shown.

[0024] Figures 9A to 9M An example method for manufacturing electronic devices is shown.

[0025] Figures 10A to 10E An example method for manufacturing features of electronic devices is shown. Detailed Implementation

[0026] The following discussion provides various examples of electronic devices and methods of manufacturing electronic devices. Such examples are non-limiting, and the scope of the appended claims should not be limited to the specific examples disclosed. In the following discussion, the terms "example" and "for example" are non-limiting.

[0027] The figures illustrate general construction methods, and descriptions and details of well-known features and techniques may be omitted to avoid unnecessary confusion with this disclosure. Furthermore, the elements in the figures are not necessarily drawn to scale. For example, the dimensions of some elements in each figure may be enlarged relative to other elements to aid in understanding the examples discussed in this disclosure. The same reference numerals in different figures denote the same elements.

[0028] The term "or" refers to any one or more items in a list connected by "or". As an example, "x or y" means any element in the three-element set {(x), (y), (x, y)}. As another example, "x, y or z" means any element in the seven-element set {(x), (y), (z), (x, y), (x, z), (y, z), (x, y, z)}.

[0029] The terms “comprises”, “comprising”, “includes”, and “including” are “open” terms that specify the presence of the stated feature but do not exclude the presence or addition of one or more other features.

[0030] The terms “first,” “second,” etc., may be used herein as designations to describe various elements, and these elements should not be limited by these terms. These terms are used only to distinguish different elements. Thus, for example, a first element discussed in this disclosure may be referred to elsewhere as a second element without departing from the teachings of this disclosure. Similarly, terms disclosed as singular may be plural in some embodiments, and elements disclosed as plural may be singular in some embodiments.

[0031] Unless otherwise specified, the term "coupled" can be used to describe two elements in direct contact with each other, or to describe two elements indirectly coupled through one or more other elements. For example, if element A is coupled to element B, then element A can be in direct contact with element B or indirectly coupled to element B through intervening element C. Similarly, the terms "above" or "on" can be used to describe two elements in direct contact with each other, to describe two elements indirectly coupled through one or more other elements, or, as depicted, two elements vertically overlapping. Unless otherwise specified, the term "coupled" can refer to mechanical coupling or electrical coupling.

[0032] Now for reference Figure 1A The diagram shows a cross-sectional view of an example signal distribution structure 100 for an electronic device, according to various examples. Figure 1B It shows Figure 1A Details of region B in [the text]. Figure 1A and Figure 1B In the example shown, the signal distribution structure 100 includes passivation structures 102, 110, and 120. A conductive structure 106 may be disposed within a pattern of the passivation structure 102. A conductive structure 116 may be disposed within a pattern of the passivation structure 110. A conductive structure 126 may be disposed within the conductive structure 126. For example, the conductive structure 126 may be on the passivation structure 110, with the passivation structure 120 above the conductive structure 126. Metal barrier layers 104, 114, and 124 may be located along the underside of the conductive structures 106, 116, and 126, respectively. The metal barrier layer may also be referred to herein as a seed crystal, barrier, metal barrier, or other similar terms. The metal barrier 104 may be located along the sidewalls and underside of the conductive structure 106. For example, the metal barrier 104 may be located between the conductive structure 106 and the passivation structure 102. The metal barrier 114 may be located on the sidewalls and underside of the conductive structure 116. For example, a metal barrier 114 may be located between the conductive structure 116 and the passivation structure 110. A metal barrier 124 may be located on the underside of the conductive structure 126. For example, a metal barrier 124 may be located between the conductive structure 126 and the passivation structure 110. An inorganic barrier 108 may be used as a barrier around the conductive structure 106. For example, an inorganic barrier 108 may be located between the conductive structure 106 and the passivation structure 110. An inorganic barrier 112 may be used as a barrier around the conductive structures 116 and 126. For example, an inorganic barrier 112 may be located between the conductive structure 116 and the passivation structure 120, or between the conductive structure 126 and the passivation structure 120.

[0033] According to various examples, conductive structures 106, 116, and 126 may include pads, vias, traces, interconnects, under-bump metallization (UBM), pillars, struts, studs, or other conductive structures. In some examples, the trace of conductive structure 106 disposed in passivation structure 110 may include an ETR. In some examples, the trace of conductive structure 126 disposed above the protrusion of passivation structure 110 may be formed using SAP.

[0034] Figures 2A to 2T Example methods for manufacturing an electronic device 200 are shown according to various examples. In some examples, the electronic device 200 may include... Figure 1A Signal distribution structure 100.

[0035] Figure 2A A cross-sectional view of an electronic device 200 in an early stage of manufacturing is shown. Figure 2A In one example, a passivation structure 102 may be provided above the substrate 101.

[0036] According to various examples, substrate 101 may include, or be referred to as, a wafer, a reconstructed wafer, a panel, a carrier, a temporary substrate, or a temporary support. For example, substrate 101 may be a semiconductor wafer containing electronic components formed in rows and columns on the wafer and separated by sawtooths. In some examples, substrate 101 may be a reconstructed wafer containing qualified electronic components arranged in rows and columns, with sealant located between adjacent qualified electronic components. In some examples, substrate 101 may be a panel containing one or more semiconductor wafers and / or reconstructed wafers located thereon. In some examples, substrate 101 may be a temporary support on which a signal distribution structure 100 is formed, wherein substrate 101 is removed after electronic components are coupled to the signal distribution structure 100. The thickness of substrate 101 may range from about 50 micrometers (μm) to about 2000 μm. The terms about, approximately, or similar terms used with numerical values ​​may mean + / -5%, + / -10%, + / -15%, + / -20%, or + / -25%.

[0037] According to various examples, a passivation structure 102 may be provided to cover the upper side of the substrate 101. The passivation layer 102 may be formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), spin coating, spray coating, dip coating, rod coating, or any other suitable deposition process. The passivation structure 102 may contain one or more layers of dielectric material. For example, the passivation structure 102 may contain one or more layers of photodeterminable organic dielectric material, such as polyimide (PI), benzocyclobutene (BCB), or polybenzoxazole (PBO). This dielectric material may be sprayed, spin-coated, or coated in liquid form as a pre-formed film attachment, or deposited in any other suitable manner to form an electrically insulating material, such as PI, BCB, PBO, etc., on the substrate 101.

[0038] The passivation structure 102 can be patterned using, for example, a photopatterning process. This photopatterning process may include a photomask through which light is exposed to optically pattern desired features (e.g., pattern 103) in the passivation structure 102. Pattern 103 can be configured to form vias, traces, ground planes, or any other desired conductive structures within the passivation structure 102.

[0039] According to various examples, a seed crystal 104 may be provided above the passivation structure 102. The seed crystal 104 may be provided within a pattern 103 formed on the upper side of the passivation structure 102. The seed crystal 104 may provide a metal seed layer for subsequent metal plating operations. In some examples, the seed crystal 104 may be a multilayer structure. For example, the seed crystal 104 may comprise a barrier layer (e.g., Ti, TiN, or TiW) formed directly on the dielectric material of the passivation structure 102 and a plating seed crystal (e.g., Cu) formed on the barrier layer. In some examples, the seed crystal 104 is formed using PVD; however, the barrier crystal 104 may also be formed by sputtering, electroless plating, CVD, MOCVD, ALD, LPCVD, PECVD, or any other suitable deposition process. The thickness of the seed crystal 104 may be between 0.1 μm and 1.0 μm, between 0.15 μm and 0.5 μm, or about 0.3 μm. For example, the thickness of the barrier layer (e.g., Ti, TiN, TiW layers) can be between 15 nanometers (nm) and 100 nm, or between 30 nm and 50 nm, and the thickness of the seed crystal (e.g., Cu layer) can be between 50 nm and 500 nm, or between 100 nm and 300 nm. In this document, when arranged to protect a conductive structure, the seed crystal may be referred to as a barrier, a metallic barrier, a barrier layer, or similar names.

[0040] Figure 2B A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2B In the example, a conductive structure 106 may be provided above the seed crystal 104 and the passivation structure 102.

[0041] The conductive structure 106 can be provided by electroless plating, electrolytic plating, sputtering, PVD, CVD, MOCVD, ALD, LPCVD, PECVD, or any other suitable deposition process. The conductive structure 106 may include metals such as Cu, Al, Ti, TiW, Au, Ag, Ni, alloys, compounds, or other suitable conductive materials. The conductive structure 106 may be disposed on a seed crystal 104. According to various examples, the seed crystal 104 may act as a seed for plating the conductive structure 106. The conductive structure 106 may be configured to completely cover the seed crystal 104 and the upper side of the passivation structure 102.

[0042] Figure 2C A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2C In the example shown, chemical mechanical planarization (CMP) can be used to remove portions of the seed 104 and conductive structure 106 from the region above the uppermost side of the passivation structure 102, thereby leaving the conductive structure 106 and seed 104 within the pattern 103. The remaining conductive material of the conductive structure 106 and seed 104 can fill or partially fill the pattern 103 to provide traces, vias, pads, ground planes, or other conductive structures in the passivation structure 102. The remaining seed 104 can be used as a barrier (or, referred to as) partially surrounding the conductive structure 106. For example, the barrier 104 can be between the conductive structure 106 and the passivation structure 102. In response to the CMP operation, the barrier 104, the conductive structure 106, and the upper side of the passivation structure 102 can be coplanar.

[0043] Figure 2D A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2D In the example shown, an inorganic barrier 108 may be provided above the upper side of the barrier 104, the conductive structure 106, and the passivation structure 102.

[0044] According to various examples, the inorganic barrier 108 may include an inorganic dielectric material. For example, the inorganic barrier 108 may include silicon nitride (Si3N4), silicon dioxide (SiO2), silicon oxynitride (SiON), or other inorganic dielectric materials. In some examples, the inorganic barrier 108 is provided using PECVD. In other examples, the inorganic barrier 108 may be provided using PVD, CVD, ALD, LPCVD, or other suitable deposition processes.

[0045] The inorganic barrier 108 may cover the upper side of the conductive structure 106 and the passivation structure 102. The inorganic barrier 108 may extend to or contact the end of the barrier 104 disposed between the conductive structure 106 and the passivation structure 102. The combination of the barrier 104 and the inorganic barrier 108 may surround or enclose the conductive structure 106 to provide a four-sided barrier.

[0046] Figure 2E A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2E In the example shown, a photoresist or mask 109 may be provided above the upper side of the inorganic barrier 108. An opening 111 may be formed in the photoresist 109. An etching process, for example, may be used to remove the portion of the inorganic barrier 108 exposed by the opening 111. Removing the inorganic barrier 108 from the opening 111 exposes a portion of the conductive structure 106 from the inorganic barrier 108. After removing the exposed portion of the inorganic barrier 108 from above the conductive structure 106, the photoresist 109 may be removed.

[0047] Figure 2F A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2F In the example shown, a passivation structure 110 is provided above the inorganic barrier 108 and the conductive structure 106. A pattern 113 may be provided in the upper side of the passivation structure 110. The elements, features, materials, or manufacturing methods of the passivation structure 110 may be similar to or the same as the elements, features, materials, or manufacturing methods of the passivation structure 102.

[0048] The passivation structure 110 can be patterned using, for example, a photopatterning process. This photopatterning process may include a photomask through which light is exposed to photopattern desired features (e.g., pattern 113) in the passivation structure 110. Pattern 113 can be configured to form vias, traces, ground planes, or any other desired conductive structures in the passivation structure 110. In some examples, pattern 113 may include vias that extend fully through the passivation structure 110, such that the conductive structure 106 is exposed by the vias in pattern 113. Pattern 113 may also include trace patterns that partially extend through the passivation structure 110, such that a portion of the passivation structure 110 remains between the bottom side of the trace pattern 113 and the top side of the conductive structure 106, the inorganic barrier 108, and / or the passivation structure 102.

[0049] According to various examples, a seed crystal 114 may be provided above the passivation structure 110 and within the pattern 113. The seed crystal 114 may extend to the portion of the conductive structure 106 exposed by the pattern 113. The seed crystal 114 may be provided above the upper side of the passivation structure 110 and on the walls defining the pattern 113. The elements, features, materials, or manufacturing methods of the seed crystal 114 may be similar to those of the seed crystal 104, as previously described. According to various examples, the seed crystal 114 may comprise a barrier layer (e.g., a Ti or TiN layer) directly on the passivation structure 110 and a plated seed layer (e.g., a Cu seed layer) on the barrier layer.

[0050] Figure 2G A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2G In the example shown, a conductive structure 116 may be provided on the upper side of the seed crystal 114. As previously described, the elements, features, materials, or manufacturing methods of the conductive structure 116 may be similar to or the same as those of the conductive structure 106.

[0051] According to various examples, the conductive structure 116 may be configured to completely cover the upper side of the seed crystal 114 and the passivation structure 110. In some examples, the seed crystal 114 may be used as a seed for plating the conductive structure 116. A portion of the conductive structure 116 located in the via pattern in the passivation structure 110 may be coupled to a portion of the conductive structure 106 exposed from the passivation structure 102.

[0052] Figure 2H A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2H In the example shown, a CMP process can be used to remove the seed 114 and conductive structure 116 from the topmost side of the passivation structure 110, thereby leaving the conductive structure 116 within the pattern 113. The conductive structure 116 can fill or partially fill the pattern 113 to provide traces, vias, pads, ground planes, or other conductive structures in the passivation structure 110.

[0053] Figure 2I A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2IIn the example shown, a portion of the conductive structure 116 can be removed from pattern 113, leaving a portion 119 of the passivation structure 110 protruding above the upper side of the conductive structure 116. In some examples, a portion of the conductive structure 116 can be removed by etching (e.g., wet or dry etching), causing the upper side of the conductive structure 116 to recess from the upper side of the passivation structure 110. The seed crystal 114 can also be removed along the sidewalls of the protrusion 119. The exposed upper end of the seed crystal 114 can be substantially coplanar with the upper side of the conductive structure 116. The remaining portion of the seed crystal 114 can serve as a barrier (or, referred to as) partially surrounding the conductive structure 116. For example, the barrier 114 can be located between the conductive structure 116 and the passivation structure 110.

[0054] Figure 2J A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2J In the example shown, a seed crystal 124 may be provided above the passivation structure 110. The elements, features, materials, or manufacturing methods of the seed crystal 124 may be similar to or the same as those of the seed crystal 104 and / or the seed crystal 114. According to various examples, the seed crystal 124 may include a barrier layer (e.g., a Ti or TiN layer) directly on the passivation structure 110 and a plated seed crystal layer (e.g., a Cu seed crystal layer) on the barrier layer.

[0055] Figure 2K A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2K In the example shown, a photoresist or mask 115 may be provided over the passivation structure 110, the seed crystal 124, and the conductive structure 116. The photoresist 115 may extend to the portion of the conductive structure 116 located between the protrusions 119 of the passivation structure 110. The photoresist 115 may also extend to portions of the conductive structure 116 located within one or more via patterns in the passivation structure 110. The elements, features, materials, or manufacturing methods of the photoresist 115 may be similar to or the same as those of the photoresist 109 described above. An opening 117 may be defined through the photoresist 115 to expose a portion of the seed crystal 124. The opening 117 may be located over the protrusions 119 of the passivation structure 110 and may expose a portion of the barrier 124 on the upper side of the protrusions 119. The photoresist 115 may extend above and along the sidewalls of the protrusion 119, such that the seed crystal 124 on the sidewalls of the protrusion 119 is covered by the photoresist 115. One or more openings 117 in the photoresist 115 may also be located above portions of the conductive structure 116 located in one or more via patterns in the passivation structure 110.

[0056] Figure 2L A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2LIn the example shown, a conductive structure 126 may be provided above the seed crystal 124 in the opening 117 of the photoresist 115. The elements, features, materials, or manufacturing methods of the conductive structure 126 may be similar to or the same as those of the conductive structure 116 or other conductive structures described herein.

[0057] Figure 2M A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2M In the example shown, the photoresist 115 and the portion of the seed crystal 124 not covered by the conductive structure 126 (i.e., the portion exposed from the conductive structure 126) can be removed.

[0058] In some examples, the portion of conductive structure 126 located on the protrusion 119 of passivation structure 110 may form, or be referred to as a trace of conductive structure 126. In some examples, the portion of conductive structure 126 located on conductive structure 116 may include, or be referred to as a pad and / or via of conductive structure 126. According to various examples, the traces of conductive structure 126 may laterally intersect with the traces of conductive structure 116. For example, in a plan view, the traces of conductive structure 126 may be laterally positioned between adjacent traces of conductive structure 116, and the traces of conductive structure 116 may be laterally positioned between adjacent traces of conductive structure 126.

[0059] The seed crystal 124 can be retained between the conductive structure 126 and the upper side of the protrusion 119, and can be removed along the sidewall of the protrusion 119. The lateral exposed end of the seed crystal 124 can be substantially coplanar with the lateral side of the conductive structure 126. The remaining portion of the seed crystal 124 can be used as (or referred to as) a barrier between the conductive structure 126 and the passivation structure 110.

[0060] Figure 2N A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2N In the example shown, an inorganic barrier 112 may be provided over the passivation structure 110, the conductive structure 116, and the conductive structure 126. The inorganic barrier 112 may comprise an inorganic dielectric material, such as Si3N4, SiO2, or SiON. In some examples, the inorganic barrier 112 may be provided using PECVD. Depending on the various examples, the elements, features, materials, or manufacturing methods of the inorganic barrier 112 may be similar to or the same as those of the inorganic barrier 108, as previously described.

[0061] According to various examples, the inorganic barrier 112 may cover the upper and lateral sides of the conductive structure 126. The inorganic barrier 112 may extend to or contact the end of the seed crystal 124 disposed between the conductive structure 126 and the protrusion 119. The combination of the barrier 124 and the inorganic barrier 112 may surround or enclose the conductive structure 126 to provide a four-sided barrier, wherein the inorganic barrier 112 covers and protects the upper and lateral sides of the conductive structure 126, and the barrier 124 covers and protects the lower side of the conductive structure 126.

[0062] In various examples, the inorganic barrier 112 may also cover the upper side of the conductive structure 116. The inorganic barrier 112 may extend to or contact the end of the barrier 114 between the conductive structure 116 and the passivation structure 110. The combination of the barrier 114 and the inorganic barrier 112 may surround or enclose the conductive structure 116 to provide a four-sided barrier, wherein the inorganic barrier 112 covers and protects the upper side of the conductive structure 116, and the barrier 114 covers and protects the lower and lateral sides of the conductive structure 116. The inorganic barrier 112 located on the lateral side of the protrusion 119 may provide further protection against electron migration from the intersecting traces of the conductive structures 106 and 116.

[0063] Figure 2O A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2O In the example shown, a photoresist or mask 125 may be provided over the inorganic barrier 112. According to various examples, the elements, features, materials, or manufacturing methods of the photoresist 125 may be similar to or the same as those of the photoresist 109, as previously described.

[0064] Photoresist 125 may extend around the lateral sides of the protrusion 119. Photoresist 125 may be contained in an opening 127 above a portion of the conductive structure 126 and / or conductive structure 116. A portion of the inorganic barrier 112 exposed by the opening 127 may be removed to selectively expose the conductive structures 116 and 126. According to various examples, the opening 127 may be configured such that removal of the inorganic barrier 112 from above the via 128 of the conductive structure 116 will also remove the inorganic barrier 112 from the sidewall of the passivated structure 110 above the via 128.

[0065] Figure 2P A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2PIn the example shown, a passivation structure 120 may be provided over passivation structure 110, inorganic barrier 112, conductive structure 106, and conductive structure 126. According to various examples, the elements, features, materials, or manufacturing methods of passivation structure 120 may be similar to or the same as those of passivation structure 102, passivation structure 110, or other passivation structures described herein. Pattern 121 may be provided in passivation structure 120.

[0066] Pattern 121 can be configured to form vias, traces, ground planes, or any other desired conductive structures within the passivation structure 120. In some examples, pattern 121 may include vias that extend fully through the passivation structure 120, such that conductive structures 116 and / or 126 are exposed by the vias in pattern 121. Pattern 121 may also include trace patterns that partially extend through the passivation structure 120. For example, a portion of the passivation structure 120 may remain between the bottom side of trace pattern 121 and the top side of conductive structure 126, inorganic barrier 112, and conductive structure 116.

[0067] Figure 2Q A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2Q In the example shown, a seed crystal 134 is provided above the passivation structure 120, and a conductive structure 136 is provided above the seed crystal 134. The elements, features, materials, or manufacturing methods of the seed crystal 134 may be similar to or identical to those of the seed crystals 124, 114, and / or 104, as previously described. The elements, features, materials, or manufacturing methods of the conductive structure 136 may be similar to or identical to those of the conductive structures 106, 116, and / or 126, as previously described. The conductive structure 136 may be provided in excess to cover the exposed side of the seed crystal 134 and the upper side of the passivation structure 120. In some examples, the via 129 of the conductive structure 136 may extend to and / or contact the conductive structure 116.

[0068] Figure 2 QA It shows Figure 2Q Detailed views of through holes 129 and 128 in region A. (See attached image.) Figure 2 QA As shown in the example, the sidewall of the passivation structure 110 above the through hole 128 may be devoid of inorganic blocking elements 112 and 114. The passivation structure 120 may be between and / or in contact with the blocking element 134 and the passivation structure 110. The upper side 118 of the through hole 128 may also be devoid of inorganic blocking element 112. For example, Figure 2OThe opening 127 of the mask 125 can be configured to expose the sidewall of the passivation structure 110 above the through hole 128. The passivation structure 120 can contact the upper side 118 of the through hole 128 and the end of the stop member 114. The through hole 129 of the conductive structure 136 can be coupled to the through hole 128 of the conductive structure 116.

[0069] Figure 2R A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2R In the example shown, CMP can be performed to remove the seed 134 and conductive structure 136 from the topmost side of the passivation structure 120. The conductive structure 136 can fill or partially fill the pattern 121 to provide traces, vias, ground planes, pads, or other conductive structures in the passivation structure 120.

[0070] In some examples, the trace portion of conductive structure 136 may be laterally intersected with the trace of conductive structure 126. For example, in a plan view, the trace of conductive structure 136 may be laterally positioned between adjacent traces of conductive structure 126, and the trace of conductive structure 126 may be laterally positioned between adjacent traces of conductive structure 136. In some examples, the trace of conductive structure 136 may be vertically aligned (e.g., vertically overlapping) with the trace of conductive structure 116. The traces of both conductive structures 126 and 136 may be located within the passivation structure 120. The blocking member 134 and the inorganic blocking member 112 may reduce or prevent electron migration between the traces of conductive structures 126 and 136, thereby increasing the trace density within the electronic device 200 and improving its electrical performance.

[0071] In some examples, a portion of the conductive structure 136 can be removed from the pattern 121 in the passivation structure 120. The portion (or protrusion) 131 of the passivation structure 120 may protrude above the upper side of the conductive structure 136. In some examples, the upper portion of the conductive structure 136 can be removed by etching (e.g., wet or dry etching), causing the upper side of the conductive structure 136 to recess from the upper side of the passivation structure 120. The seed crystal 134 can also be removed along the sidewalls of the protrusion 131. The exposed upper end of the seed crystal 134 may be substantially coplanar with the upper side of the conductive structure 136. The remaining portion of the seed crystal 134 can serve as a barrier (or, referred to as) partially surrounding the conductive structure 136. For example, the barrier 134 may be located between the conductive structure 136 and the passivation structure 120.

[0072] Figure 2S A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2S In the example shown, it is possible to repeat similar... Figures 2J to 2OThe steps involve providing a barrier 144, a conductive structure 146, and an inorganic barrier 122. The upper side of the via 129 of the conductive structure 136 can be exposed from the inorganic barrier 122 by an etching process. In some examples, trace portions of the conductive structure 146 (e.g., portions of the conductive structure 146 located on the protrusion 131 of the passivation structure 120) can be laterally staggered with the traces of the conductive structure 136. For example, in a plan view, the traces of the conductive structure 146 can be laterally positioned between adjacent traces of the conductive structure 136, and the traces of the conductive structure 136 can be laterally positioned between adjacent traces of the conductive structure 146. In some examples, the traces of the conductive structure 146 can be vertically aligned (e.g., vertically overlapped) with the traces of the conductive structure 126.

[0073] According to various examples, the combination of the blocking member 134 and the inorganic blocking member 122 can surround or enclose the conductive structure 136 to provide four-sided blocking. For example, the inorganic blocking member 122 can cover or protect the upper side of the conductive structure 136, and the blocking member 124 can cover or protect the lower and lateral sides of the conductive structure 136.

[0074] The combination of the blocking member 144 and the inorganic blocking member 122 can surround or enclose the conductive structure 146 to provide four-sided blocking. For example, the inorganic blocking member 122 can cover or protect the upper and lateral sides of the conductive structure 146, and the blocking member 144 can cover or protect the lower side of the conductive structure 146.

[0075] Figure 2T A cross-sectional view of the electronic device 200 during a subsequent manufacturing stage is shown. Figure 2T In the illustrated example, a passivation structure 130 may be provided over the conductive structure 146 and the inorganic barrier 122. The elements, features, materials, or manufacturing methods of the passivation structure 130 may be similar to or the same as those of passivation structures 120, 110, 102, or other passivation structures described herein. An outward terminal 156 may be coupled to the conductive structures 146 and 136. An external interconnect 158 ​​may be coupled to the outward terminal 156. For example, the external interconnect 158 ​​may include, or be referred to as, a solder ball, bump, pillar, or pad. In some examples, the outward terminal 156 may include, or be referred to as, under-bump metallization. In an example where the substrate 101 includes electronic components, the external interconnect 158 ​​may serve as a component interconnect and may be referred to as an external input / output terminal of the electronic device 200. In an example where the substrate 101 includes a temporary carrier removed from the signal distribution structure 100, the external interconnect 158 ​​may serve as a signal distribution terminal to which the electronic components are coupled.

[0076] Figures 3A to 3E A method for manufacturing an example electronic device 200' according to various examples is shown. Figure 3A Examples from Figures 2A to 2N The process steps described in the text continue. Figure 3A In some examples, a photoresist or mask 225 may be provided over the inorganic barrier 112, the passivation structure 110, and the conductive structure 126. According to various examples, the elements, features, materials, or manufacturing methods of the photoresist 225 may be similar to or the same as those of the photoresist 109, photoresist 125, or other photoresists described herein.

[0077] Photoresist 225 may extend around the lateral sides of the protrusion 119 and the conductive structure 126. Photoresist 225 may be contained in an opening 227 above a portion of the conductive structure 126 and / or the conductive structure 116. A portion of the inorganic barrier 112 exposed by the opening 227 may be removed to selectively expose the conductive structures 116 and 126. According to various examples, the opening 227 may be configured such that removing the inorganic barrier 112 from above the through-hole 128 of the conductive structure 116 will not remove the inorganic barrier 112 from the sidewall of the passivated structure 110. Electronic device 200 is depicted as having an open cap, and electronic device 200' is depicted as having an inorganic cap, but both capping techniques can be used in various embodiments. Figures 3A to 3E The structure and manufacturing technology can be similar to Figures 2A to 2P The structure and manufacturing techniques shown and described herein.

[0078] Figure 3B An electronic device 200' is shown in a subsequent manufacturing stage. Figure 3B In the example, a passivation structure 120 can be provided, as previously referenced. Figure 2P As described above, a pattern 121 may be provided on the upper side of the passivation structure 120. According to various examples, the pattern 121 may expose conductive structures 116 and 126. For example, vias 128 of conductive structure 116 and pad portions of conductive structure 126 may be exposed from the passivation structure 120.

[0079] Figure 3C A cross-sectional view of the electronic device 200' in a subsequent manufacturing stage is shown. Figure 3C In the example shown, a seed / blocking element 124 and a conductive structure 136 may be provided, as previously referenced. Figure 2Q and 2R As stated above.

[0080] Figure 3CA It shows Figure 3C Detailed views of through holes 129 and 128 in region A. (See attached image.) Figure 3CAAs shown in the example, the inorganic stop 112 can be on the sidewall of the passivation structure 110 above the through hole 128. The inorganic stop 112 can be between the passivation structure 120 and the passivation structure 110, such that the passivation structure 120 does not contact the passivation structure 110. The inorganic stop 112 can be on the upper side 118 of the through hole 128 and the end of the stop 114, such that the inorganic stop 112 extends from the stop 134 to the sidewall of the passivation structure 110. For example, Figure 3A The opening 227 of the mask 225 can be configured to be narrower than the upper side of the through hole 128 (e.g., having a smaller diameter or width). The inorganic stop 112 can be between the passivation structure 120 and the upper side 118 of the through hole 128 and the end of the stop 114.

[0081] Figure 3D A cross-sectional view of the electronic device 200' in a subsequent manufacturing stage is shown. Figure 3D In the example shown, a barrier 144, a conductive structure 146, and an inorganic barrier 122 may be provided, as previously referenced. Figure 2S As stated above.

[0082] Figure 3E A cross-sectional view of the electronic device 200' in a subsequent manufacturing stage is shown. Figure 3E In the example shown, a passivation structure 130, an outward terminal 156, and an external interconnect 158 ​​may be provided, as previously referenced. Figure 2T According to various embodiments, the signal distribution structure 100' of the electronic device 200' may be similar to the signal distribution structure 100 of the electronic device 200, but has inorganic blocking members 112 positioned along the sidewall of the passivation structure 110 and along the top of the through hole 128, thereby forming a closed or covered through hole 128.

[0083] Now for reference Figures 4A to 4C Example electronic device 400 according to various examples is shown. Figure 4A In the example, the conductive structure 522 may be surrounded or enclosed by a barrier material to provide four-sided or full-side protection.

[0084] Figure 4B and Figure 4C Detailed views show example barrier structures formed using an etching process (barrier structure 404) or a Ni plating process (barrier structure 406). Figure 4BIn the examples, barrier structure 404 may include metal barriers 512 and 524 surrounding conductive structure 522. Inorganic barriers 510 and 530 may surround metal barriers 512 and 524. In some examples, seed crystal 514 may be present between conductive structure 522 and metal barrier 512. Using the structures and techniques described in other parts of this document, layers of passivation structures 502, 540, 407, and 420 may be formed in a stack.

[0085] exist Figure 4C In some examples, the barrier structure 406 may include metal barriers 402 and 412 surrounding the conductive structure 422. Inorganic barriers 410 and 430 may surround the metal barriers 402 and 412. In some examples, a seed crystal 414 may be located between the conductive structure 422 and the metal barrier 412.

[0086] exist Figure 4B and Figure 4C In the example, the capping structure can protrude laterally outward from the underside of the example conductive structures 422 and 522. Both blocking structures include an internal metallic portion and an external inorganic portion. Figure 4B and 4C The metal portion of the example cap structure can protrude from approximately 0.25 micrometers (μm) to approximately 1.5 μm.

[0087] refer to Figures 5A to 5L An example method for manufacturing an example electronic device 400 having a blocking structure 404 is shown. Figures 5A to 5L Various features may include reference Figures 2A to 2T The electronic device 200 shown and described in the text is similar to those structures and manufacturing techniques.

[0088] exist Figure 5A In the example, substrate 500 may include a passivation structure 501 disposed above substrate 500. A conductive structure 504 may be provided above the passivation structure 501 and substrate 500. A passivation structure 502 may be provided above substrate 500, passivation structure 501, and conductive structure 504. An opening 506 may be defined through passivation structure 502, which may expose a portion of conductive structure 504. Passivation structure 501, passivation structure 502, and conductive structure 504 may include structures and manufacturing techniques similar to or the same as those described for the passivation and conductive structures in reference electronic device 200. As previously described, substrate 500 may be similar to or the same as substrate 101.

[0089] According to various examples, an inorganic barrier 510 may be provided above the passivation structure 502. According to various examples, the inorganic barrier 510 may include an inorganic dielectric material. For example, the inorganic barrier 510 may include Si3N4, SiO2, SiON, or other inorganic dielectric materials. In some examples, the inorganic barrier 510 is provided using PECVD. In other examples, the inorganic barrier 510 may be provided using PVD, CVD, ALD, LPCVD, or other suitable deposition processes.

[0090] A portion of the inorganic barrier 510 can be removed from above the partially conductive structure 504 exposed by the opening 506. For example, a photoresist or mask can be used to... Figure 2O or Figure 3A The inorganic barrier 510 is removed in a similar manner to the inorganic barrier 112.

[0091] Figure 5B A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5B In the example shown, a barrier 512 and a seed crystal 514 may be provided above the inorganic barrier 510. Depending on the example, the barrier 512 may comprise a metallic material. For example, the barrier 512 may comprise one or more layers of Ti, TiN, or TiW. The barrier 512 may be formed directly on the inorganic barrier 510. In some examples, the barrier 512 is formed using PVD; however, the barrier 512 may also be formed by sputtering, electroless plating, CVD, MOCVD, ALD, LPCVD, PECVD, or any other suitable deposition process. In some examples, the thickness of the barrier 512 may be between 15 nanometers (nm) and 100 nm, or between 30 nm and 50 nm.

[0092] According to various examples, a seed crystal 514 may be provided above the barrier 512. The seed crystal 514 may comprise a metallic material configured to provide a seed metal for subsequent metal plating. For example, the seed crystal 514 may comprise a Cu seed layer. In some examples, the thickness of the seed crystal 514 may be between 50 nm and 500 nm or between 100 nm and 300 nm.

[0093] According to various examples, a photoresist or mask 516 may be provided above the upper side of the seed 514. The photoresist 516 may define an opening 518. The opening 518 may be configured to provide traces, vias, pads, ground planes, or any other desired conductive structures above and / or within the passivation structure 502.

[0094] Figure 5C A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5C In the example shown, a conductive structure 520 may be provided in the opening 518 of the photoresist 516. The conductive structure 520 may be on a seed crystal 514. In some examples, the conductive structure 520 may be formed by plating Cu onto the seed crystal 514. The elements, features, materials, or manufacturing methods of the conductive structure 520 may be similar to or the same as those of the conductive structure 126 or other conductive structures described herein. The conductive structure 520 may include traces or conductive structures 522 (e.g., conductive structures 520 and 522 may include the same conductive material). In some examples, the conductive structure 520 may include traces 522 formed using a semi-additive process.

[0095] Figure 5D A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5D In the examples shown, the photoresist 516 can be removed or stripped, and the portion of the seed 514 not covered by the conductive structures 520 / 522 can be removed. In some examples, the seed 514 can be removed by etching, for example, by wet etching from above the barrier 512. In some examples, after the seed 514 is removed, the barrier 512 is exposed above the barrier 510 outside the coverage area of ​​the conductive structures 520 / 522.

[0096] Figure 5E A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5E In the example shown, a barrier 524 may be provided above the conductive structures 520 / 522 and the barrier 512. The barrier 524 may extend to and contact the barrier 512. The barrier 524 may include a metallic barrier. For example, the barrier 524 may include one or more layers of Ti, TiN, TiW, or other metals or metal alloys. In some examples, the barrier 524 and the barrier 512 may include the same material. In some examples, the barrier 524 is formed using PVD; however, the barrier 524 may also be formed by electroless plating, electrolytic plating, sputtering, CVD, MOCVD, ALD, LPCVD, PECVD, or any other suitable metal deposition process.

[0097] Figure 5F A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5FIn the example shown, an inorganic barrier 530 may be provided. The inorganic barrier 530 may include structures and techniques similar to those of other inorganic barriers described herein. For example, the inorganic barrier 530 may include Si3N4, SiO2, or SiON. In some examples, the inorganic barrier 530 is provided using PECVD. In other examples, the inorganic barrier 530 may be provided using PVD, CVD, ALD, LPCVD, or other suitable deposition processes. Figure 5F In some examples, an inorganic barrier 530 may be provided above the exposed side of barrier 524. In some examples, barrier 524 and barrier 512 may be sandwiched between inorganic barrier 510 and inorganic barrier 530 above passivation structure 502. Barrier 524 may be sandwiched between inorganic barrier 530 and conductive structure 520 / 522.

[0098] Figure 5G A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5G In the example shown, a photoresist or mask 536 may be provided. The photoresist 536 may cover portions of inorganic barriers 530, 524, 512, and 510 for protection during the etching process. The photoresist 536 may be disposed above the upper side and around the lateral side of the conductive structures 520 / 522 to protect the barrier layer surrounding the conductive structures 520 / 522 during the etching process. Portions of inorganic barriers 530, 512, 524, or 510 may be exposed from the photoresist 536 through openings 537 for selective removal. The openings 537 in the photoresist may be outside the covered area of ​​the conductive structures 520 / 522, and / or outside the covered area of ​​portions of the inorganic barriers 530 and 524 located on the sidewalls of the conductive structures 520 / 522.

[0099] Figure 5H A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5H In the example shown, portions of inorganic stoppers 530, 512, 524, and 510 can be removed by etching or by using other techniques described herein. Passivation structure 502 can provide an etch stop and / or can be exposed after removal of inorganic stoppers 530, 512, 524, and 510. Figure 5I A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5IIn the example shown, the photoresist 536 can be stripped or removed, leaving a conductive structure 520 / 522 surrounded by inorganic blocking elements 530, 512, 524, and 510. The inorganic blocking elements 530, 512, 524, and 510 can form a blocking element 404 surrounding the conductive structure 520 / 522. Figure 4B ).

[0100] Figure 5J A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5J In the example shown, a passivation structure 540 may be provided above the passivation structure 502 and above the conductive structures 520 / 522, wherein the blocking structure 404 is disposed around the conductive structures 520 / 522. The passivation structure 540 may comprise one or more layers of a photodeterminable organic dielectric material, such as P1, BCB, or PBO. The elements, features, materials, or manufacturing methods of the passivation structure 540 may be similar to or the same as those of the passivation structure 102 or other passivation structures described herein.

[0101] Figure 5K A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 5K In the examples shown, steps 5A to 5J can be repeated to provide conductive structures 544 and 550 / 552, respectively, having a structure and manufacturing technique similar to that of conductive structures 504 and 520 / 522. Similarly, repeating steps 5A to 5J can provide passivation structures 546 and 560, respectively, having a structure and manufacturing technique similar to that of passivation structures 502 and 540. In some examples, a blocking structure 404 can be provided around the conductive structure (e.g., a trace) 552 of conductive structure 550. Although Figure 5K Conductive structures 504 and 544 are shown as providing ground planes vertically intersecting with conductive structures 520 and 550; however, it is contemplated and understood that other arrangements and layer combinations may be used. In some examples, an outward terminal 566 may be coupled to conductive structure 550. An external interconnect 568 may be coupled to outward terminal 566. Outward terminal 566 and external interconnect 568 may be similar to or identical to outward terminal 156 and external interconnect 158 ​​of electronic device 200, respectively.

[0102] Figure 5LThe blocking structure 404 is described in more detail. The conductive structure 522 may be completely surrounded or encircled by the blocking structure 404. The blocking structure 404 may include an inorganic blocking member 510 along the underside of the conductive structure 522. A blocking member 512 may be disposed above the inorganic blocking member 510. A blocking member 524 may be disposed above and around the conductive structure 522 and may extend to the blocking member 512. An inorganic blocking member 530 may be disposed above and around the blocking member 524.

[0103] In various examples, the metallic barriers, including barriers 524 and 512, may surround or enclose the conductive structure 522. In some examples, the lateral ends of barriers 512 and 524 may be exposed from inorganic barriers 510 and 530. The ends of barriers 512 and 524 may extend beyond the coverage area of ​​the conductive structure 522, such that the bottom side of barrier 524 may contact the top side of barrier 512. In some examples, barriers 512 and 524 may extend beyond the coverage area of ​​the conductive structure 522 by a distance D1. In some examples, distance D1 may be from approximately 0.25 micrometers (μm) to approximately 1.5 μm. Although in Figure 5L The examples are not shown, but some examples may be included similar to the following. Figure 6H The inorganic blocking member 530 covers the lateral ends of the blocking members 512 and 524 in the manner shown.

[0104] refer to Figures 6A to 6H An example method is shown for manufacturing an example electronic device 400 having a blocking structure 406 in an early manufacturing stage. Figures 6A to 6H The various feature techniques may include structures and manufacturing techniques similar to those shown and described elsewhere herein. The blocking structure 406 may be formed using structures and techniques similar to those of the blocking structure 404, the differences of which are described below and in [the text is incomplete]. Figures 6A to 6H Described in the text.

[0105] Figure 6A A cross-sectional view of the electronic device 400 in the subsequent manufacturing stage is shown. Figure 6A Examples from Figures 5A to 5C The process steps described in the text continue. Figure 6A In the example, photoresist 516 can be removed or stripped. Figure 5CThe seed 514 and the barrier 512 can be removed, for example, by etching. In some examples, wet etching can be used to remove portions of the seed 514 and barrier 512 exposed from the conductive structures 520 / 522. In some examples, in response to the removal of the seed 514 and barrier 512, the inorganic barrier 510 may be an etch stop layer and / or may be exposed outside the covered area of ​​the conductive structures 520 / 522. In some examples, similar to... Figure 5D The blocking element 512 can remain above the inorganic blocking element 510.

[0106] Figure 6B A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 6B In the example shown, a photoresist or mask 606 may be provided. The photoresist 606 may cover the portion of the inorganic barrier 510 located between adjacent conductive structures 520 / 522. The photoresist 606 may be contained above the conductive structures 520 / 522 and expose openings 607 in the conductive structures. Openings 607 in the photoresist 606 may expose the upper and lateral sides of the conductive structures 520 / 522. The photoresist 606 may be spaced apart from the lateral sides of the conductive structures 520 / 522. For example, the width of the openings 607 may be greater than the width of the conductive structures 520 / 522, and the upper side of the inorganic barrier 510 (or, in an example where the barrier 512 is not etched away, the upper side of the barrier 512) may be exposed from the photoresist 606 adjacent to the conductive structures 520 / 522. The gap between the photoresist 606 and the conductive structures 520 / 522 can provide a metal barrier (e.g., Ni), as described in further detail below.

[0107] Figure 6C A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 6C In the example shown, a metal barrier 624 may be provided over the conductive structure 520. In some examples, the metal barrier 624 may be provided over the trace 522 of the conductive structure 520 formed using SAP. In some examples, the metal barrier 624 may comprise nickel or a nickel alloy, but in some examples other metals may be used. The barrier 624 may be formed by electroless plating, electrolytic plating, sputtering, PVD, CVD, MOCVD, ALD, LPCVD, PECVD, or any other suitable metal deposition process.

[0108] In various examples, the blocking member 624 may cover the lateral and upper sides of the conductive structures 520 / 522. The blocking member 624 may extend to and contact the upper side of the inorganic blocking member 510 to completely surround or enclose the conductive structures 520 / 522. In some examples, the ends of the blocking member 512 and the seed crystal 514 may extend to and contact the blocking member 624. In examples where the blocking member 512 remains above the inorganic blocking member 510, the blocking member 624 may extend to the upper side of the blocking member 512 such that the bottom side of the blocking member 624 contacts the upper side of the blocking member 512, similar to... Figure 5E The blocking component 524 in the middle.

[0109] Figure 6D A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 6D In the example shown, the photoresist 606 can be stripped or removed to expose the portion of the inorganic barrier 510 outside the coverage area of ​​the barrier 512. In an example where the barrier 512 remains above the inorganic barrier 510, the barriers 524 and 512 can be removed from between adjacent conductive structures 520 / 522 to expose the inorganic barrier 510.

[0110] Figure 6E A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 6E In the example shown, an inorganic barrier 630 may be provided above the conductive structures 520 / 522 and the inorganic barrier 510. The inorganic barrier 630 may include structures and techniques similar to those of other inorganic barriers described herein. For example, the inorganic barrier 630 may include Si3N4, SiO2, or SiON. Figure 6E In the example, an inorganic barrier 630 may be provided above the exposed side of the barrier 624 and above the exposed portion of the inorganic barrier 510. The inorganic barrier 630 may extend to and contact the inorganic barrier 510.

[0111] Figure 6F A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 6F In the example shown, as previously described, a passivation structure 540 may be provided above the passivation structure 502 and above the conductive structures 520 / 522, wherein the blocking structure 406 is disposed around the conductive structures 520 / 522.

[0112] Figure 6G A cross-sectional view of the electronic device 400 during a subsequent manufacturing stage is shown. Figure 6G The examples shown can be repeated differently. Figures 5A to 5C and Figures 6A to 6FThe steps are repeated to provide conductive structures 544 and 550 / 552, respectively, having structures and manufacturing techniques similar to those of conductive structures 504 and 520 / 522. Similarly, the steps are repeated... Figures 5A to 5C and Figures 6A to 6F The steps can provide passivation structures 546 and 560 with structures and manufacturing techniques similar to those of passivation structures 502 and 540, respectively. In some examples, blocking structures 406 and / or 406' can be provided around the conductive structure (e.g., trace) 552 of the conductive structure 550. Although Figure 6G Conductive structures 504 and 544 are shown as providing ground planes vertically intersecting with conductive structures 520 and 550; however, it is contemplated and understood that other arrangements and layer combinations may be used. In some examples, an outward terminal 566 may be coupled to conductive structure 550. An external interconnect 568 may be coupled to outward terminal 566. Outward terminal 566 and external interconnect 568 may be similar to or identical to outward terminal 156 and external interconnect 158 ​​of electronic device 200, respectively.

[0113] Figure 6H The blocking structures 406 and 406' are described in more detail. According to various examples, the conductive structure 522 may be completely surrounded or encircled by the blocking structure 406. The blocking structure 406 may include an inorganic blocking member 510 along the underside of the conductive structure 522. A blocking member 512 may be disposed on the inorganic blocking member 510, between the seed crystal 514 and the inorganic blocking member 510. The coverage area of ​​the blocking member 512 may match the coverage area of ​​the conductive structure 522. For example, the end of the blocking member 512 may be coplanar with the lateral side of the conductive structure 522. A blocking member 624 may extend to the top side of the inorganic blocking member 510. The bottom side of the blocking member 624 may contact the top side of the inorganic blocking member 510. The end of the blocking member 512 may contact the blocking member 624. An inorganic blocking member 630 may be disposed above and around the metallic blocking member 624. The inorganic blocking member 630 may extend to and contact the inorganic blocking member 510. In some examples, inorganic barrier 630 and / or inorganic barrier 510 may extend continuously between adjacent conductive structures 522.

[0114] In various examples, the metal barriers, including metal barriers 624 and 512, may surround or enclose the conductive structure 522. In the example of barrier 406, the lateral end of barrier 624 may be covered by inorganic barrier 630. Inorganic barriers, including inorganic barriers 630 and 510, may surround or completely enclose the metal barriers (e.g., metal barriers 624 and 512) and the conductive structure 522. The lateral end of barrier 624 may extend beyond the covered area of ​​the conductive structure 522 by a distance D2. In some examples, the distance D2 may be from approximately 0.25 micrometers (μm) to approximately 1.5 μm.

[0115] In some examples, the conductive structure 522 may be completely surrounded or encircled by the blocking structure 406'. The blocking structure 406' may include an inorganic blocking member 510 along the underside of the conductive structure 522, wherein a blocking member 512 is disposed above the inorganic blocking member 510, between the seed crystal 514 and the inorganic blocking member 510. The blocking member 512 may extend beyond the coverage area of ​​the conductive structure 522. For example, the end of the blocking member 512 may be coplanar with the end of the blocking member 624. The blocking member 624 may extend to the top side of the blocking member 512. The bottom side of the blocking member 624 may contact the top side of the blocking member 512. The ends of the blocking member 512 and the ends of the blocking member 624 may contact the inorganic blocking member 630. The inorganic blocking member 630 may be disposed above and around the metallic blocking member 624 and may extend to and contact the inorganic blocking member 510.

[0116] In various examples, the metal barriers, including metal barriers 624 and 512, may surround or enclose the conductive structure 522. In the example of barrier 406', the lateral ends of barriers 624 and 512 may be covered by an inorganic barrier 630. The inorganic barriers, including inorganic barriers 630 and 510, may surround or completely enclose the metal barriers (e.g., metal barriers 624 and 512) and the conductive structure 522. The lateral ends of barriers 624 and 512 may extend beyond the coverage area of ​​the conductive structure 522 by a distance D3. In some examples, the distance D3 may be from approximately 0.25 micrometers (μm) to approximately 1.5 μm.

[0117] Now for reference Figure 7A and Figure 7B A cross-sectional view of an example signal distribution structure 700 for an electronic device, according to various examples, is shown. Figure 7A and Figure 7BIn the example shown, the signal distribution structure 700 includes a passivation structure 702 and a passivation structure 704. A conductive structure 706 may be embedded in the passivation structure 702. A conductive structure 708 may be disposed on the passivation structure 702, and a passivation structure 704 may be disposed on the conductive structure 708. The passivation structure 702 may include a separation region 710, and the tip 707 of the conductive structure 706 may extend into the separation region 710. In some examples, the tip 707 may include a circular geometry. In response to removing the separation region 710, such as Figure 7B As shown, the tip 707 can protrude from the outer side 702a of the passivation structure 702.

[0118] Now for reference Figures 8A to 8L The illustration shows an example method of manufacturing an electronic device 701 containing a signal distribution structure 700 according to various examples. Figures 8A to 8L Various features may include structures and manufacturing techniques similar to those shown and described elsewhere herein. For example, the elements, features, materials, or manufacturing methods of the signal distribution structure 700 may be similar to or the same as those of the signal distribution structure 100 described with reference to Figures 1-2T.

[0119] Figure 8A A cross-sectional view of electronic device 701 in an early stage of manufacturing is shown. Figure 8A In the example, a passivation structure 702 may be provided above the substrate 800. The passivation structure 702 may define a trace opening 802 and a via opening 804. The trace opening 802 and the via opening 804 are used as examples, while other types of conductive structures may be negatively defined through the openings formed in the passivation structure 702.

[0120] Figure 8B Showing more details Figure 8A Region B in the text. For example... Figure 8B As shown, the via opening 804 can be a blind via, such that a portion of the passivation structure 702 remains between the tip region 806 of the via opening 804 and the substrate 800.

[0121] The passivation structure 702 can be formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), spin coating, spraying, dip coating, rod coating, or any other suitable deposition process. The elements, features, materials, or manufacturing methods of the passivation structure 702 can be similar to or the same as those of the passivation structure 110.

[0122] In various examples, substrate 800 may include, or be referred to as, a wafer, plate, panel, strip, carrier, or temporary carrier. Substrate 800 may include semiconductor materials (e.g., Si), glass, metal, ceramic, etc. In some examples, a temporary adhesive may be provided on the upper side of substrate 800 to facilitate the separation of passivation structure 702 from substrate 800. The temporary adhesive may be, for example, a thermal release tape (or film) or an optical release tape (or film), configured to reduce its adhesive strength due to heat or light, respectively.

[0123] refer to Figure 8C The illustration shows an electronic device 701 in a subsequent manufacturing stage, according to various examples. Figure 8C In the example, a conductive structure 706 can be provided in the passivation structure 702. The tip 707 of the conductive structure 706 can be spaced apart from the substrate 800. The conductive structure 706 can be provided in a manner similar to conductive structure 116, such as... Figures 2G to 2I As shown. A portion of the conductive structure 706 can be removed from openings 802 and 804, leaving a protrusion 810 of the passivation structure 702 protruding above the upper side of the conductive structure 706. The protrusion 810 may be substantially coplanar with the upper side surface 808 of the passivation structure 702. In some examples, a portion of the conductive structure 706 can be removed by etching (e.g., wet etching or dry etching), causing the upper side of the conductive structure 706 to be recessed from the upper side of the passivation structure 702.

[0124] Figure 8D A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8D In the example shown, a conductive structure 816 may be provided over one or more conductive vias of the passivation structure 702 and the conductive structure 706. The elements, features, materials, or manufacturing methods of the conductive structure 816 may be similar to or the same as those of the conductive structure 126. The conductive structure 816 may be provided in a manner similar to that of the conductive structure 126, such as... Figures 2J to 2M As shown.

[0125] Figure 8E A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8E In the example shown, passivation structure 704, conductive structure 826, conductive structure 836, and passivation structure 819 can be provided. The elements, features, materials, or manufacturing methods of passivation structures 704, 826, 836, and 819 can be similar to or the same as those of passivation structures 120, 136, 146, and 130, respectively. Passivation structures 704, 826, 836, and 819 can be provided in a manner similar to that of passivation structures 120, 136, 146, and 130, such as... Figures 2N to 2T As shown.

[0126] Figure 8F A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8F In the example, outward terminal 856 may be coupled to conductive structures 836 and 826. External interconnect 858 may be coupled to outward terminal 856. For example, external interconnect 858 may include, or be referred to as, solder balls, bumps, pillars, or pads. The elements, features, materials, or manufacturing methods of outward terminal 856 and external interconnect 858 may be similar to or the same as the elements, features, materials, or manufacturing methods of outward terminal 156 and external interconnect 158 ​​as described above.

[0127] Figure 8G A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8G In the example, an electronic component 840 is provided above the signal distribution structure 700. The electronic component 840 may be coupled to an interconnect 832. For example, the contacts 842 of the electronic component 840 may be coupled to the interconnect 832 via reflow, thermoforming, laser-assisted bonding, or any other suitable bonding technique. The electronic component 840 may include, or be referred to as, a die, chip, semiconductor package (e.g., multiple interconnects and / or stacked dies and / or one or more dies coupled to an interposer substrate), passive component, antenna patch, or power device. In some examples, the electronic component 840 may include a digital signal processor (DSP), network processor, power management unit, audio processor, radio frequency (RF) circuitry, wireless baseband processor, system-on-a-chip (SoC) processor, memory, sensor, or application-specific integrated circuit (ASIC). In some examples, the electronic component 840 may be configured to perform calculations and control processing, store data, or remove noise from electrical signals.

[0128] A sealant 860 may be provided above the electronic component 840 and the signal distribution structure 700. In some examples, the sealant 860 may be provided by compression molding, transfer molding, liquid molding, vacuum lamination, paste printing, film-assisted molding, or any other suitable deposition process. The sealant 860 may include, or be referred to as, an encapsulation body, a sealing structure, an insulator, a mold, an epoxy molding compound (EMC), a resin, a filler-reinforced polymer, a Class B compression film, a gel, etc.

[0129] Figure 8H A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8HIn some examples, a carrier 862 may be coupled over the electronic component 840 and the sealant 860. In some examples, a temporary adhesive may be provided between the carrier 862 and the sealant 860 to facilitate the separation of the carrier 862 from the electronic component 840. The temporary adhesive may be, for example, a heat-release tape (or film) or an optical release tape (or film), configured to reduce its adhesive strength due to heat or light, respectively.

[0130] Figure 8I A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8I In the example, the signal distribution structure 700 can be rotated 180 degrees, so that the substrate 800 can be positioned such that... Figure 8I The orientation is located above the signal distribution structure 700.

[0131] Figure 8J A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8J In some examples, substrate 800 can be removed to expose passivation structure 702. In some examples, etching can be performed to remove substrate 800. For example, substrate 800 may include silicon, and dry etching can be performed to remove substrate 800 from passivation structure 702. In some examples, a laser debonding step can be used to remove substrate 800. For example, substrate 800 may include glass, and laser debonding can be used to release substrate 800 from passivation structure 702. Figure 8J As shown, in response to the removal of substrate 800, a portion of passivation structure 702 (e.g., separation region 710) may remain above the tip portion 707 of conductive structure 706.

[0132] Figure 8K A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8K In the example, a portion of the passivation structure 702 can be removed from above the tip portion 707 (e.g., Figure 8J (Separation region 710 in the passivation structure 702). In some examples, the separation region 710 can be removed from the passivation structure 702 using an etching process. The tip 707 can protrude above the passivation structure 702 in response to the removal of the separation region 710.

[0133] Figure 8L A cross-sectional view of the electronic device 701 during a subsequent manufacturing stage is shown. Figure 8L In the example, carrier 862 can be removed, and outward terminal 870 can be coupled to the protruding tip 707 of conductive structure 706. Outward terminal 870 can be coupled to electronic component 840 through conductive structures 706, 816, 826, and 836. Outward terminal 870 may include external interconnect 872, which may include, for example, solder balls, pads, or pillars.

[0134] Now for reference Figures 9A to 9M This illustrates example methods for manufacturing an electronic device 900 including a signal distribution structure 901, according to various examples. Figures 9A to 9M Various features may include structures and manufacturing techniques similar to those shown and described elsewhere herein. For example, electronic device 900 may include structures and manufacturing techniques similar to those shown and described elsewhere herein. Figures 8A to 8L The structure and manufacturing techniques of the electronic device 701, including the signal distribution structure 700, or other electronic devices described herein, are similar.

[0135] Figure 9A A cross-sectional view of an electronic device 900 in an early stage of manufacturing is shown. Figure 9A In the example, a passivation structure 904 may be provided above the carrier 902. As previously described, the carrier 902 may be similar to the substrate 800. An opening 906 may be defined in the passivation structure 904. The opening 906 may extend into the separation region 910 of the passivation structure 904. A portion of the passivation structure 904 may remain between the bottom of the opening 906 and the carrier 902.

[0136] Figure 9B A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9B In one example, a seed crystal 911 may be provided over the passivation structure 904. The seed crystal 911 may extend into and couple to the sidewall defining the opening 906. In some examples, the seed crystal 911 may comprise a barrier metal (e.g., Ti, TiN, or TiW) and a plated seed crystal (e.g., Cu) on the barrier metal. A photoresist 912 may be provided over the passivation structure 904 and the seed crystal 911. The photoresist 912 may define an opening 914 over the seed crystal 911 and the passivation structure 904. The opening 906 in the passivation structure 904 may be exposed by the photoresist 912.

[0137] Figure 9C A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9C In one example, a conductive structure 905 may be provided in the opening 914 of the photoresist 912. The conductive structure 905 may include a trace 916 formed above the upper side of the passivation structure 904. In some examples, the trace 916 may be made using SAP and may be referred to as an SAP trace. The conductive structure 905 may include a conductive via 920 in the opening 906 of the passivation structure 904. The tip 921 of the conductive via 920 may be spaced apart from the carrier 902. For example, the via 920 may be a blind via.

[0138] Figure 9DA cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9D In the example, the photoresist 912 can be stripped from above the passivation structure 904. The trace 916 can remain above the upper side of the passivation structure 904. A portion of the seed crystal 911 located outside the coverage area of ​​the conductive structure 905 can be removed.

[0139] Figure 9E A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9E In the example, a passivation structure 924 may be provided above the passivation structure 904 and the conductive structure 905 (e.g., above the trace 916 and the conductive via 920). The passivation structure 924 may cover the trace 916 above this upper side of the passivation structure 904. The passivation structure 924 may define an opening 926 exposing the upper side of the conductive via 920. The elements, features, materials, or manufacturing methods of the passivation structure 924 may be similar to or the same as the elements, features, materials, or manufacturing methods of the passivation structure 120 or other passivation structures described herein.

[0140] Figure 9F A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9F In some examples, a seed crystal 928 may be provided above the passivation structure 924. The seed crystal 928 may extend into and over the sidewall defining the opening 926. In some examples, the seed crystal 928 may include a barrier (e.g., one or more layers of Ti, TiN, or TiW) and a plated seed crystal (e.g., Cu) on the barrier. A photoresist or mask 930 may be provided above the seed crystal 928 and the passivation structure 924. An opening 931 in the photoresist 930 may expose the seed crystal 928 and / or the conductive via 920. A conductive structure 936 may be provided above the passivation structure 924 at the opening. Figure 9G ).

[0141] Figure 9G A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9G In the example, a conductive structure 936 is provided on the passivation structure 924. The photoresist 930 can be stripped from the passivation structure 924, and portions of the seed crystal 928 outside the covered area of ​​the conductive structure 936 can be removed. According to various embodiments, the traces of the conductive structure 936 may be referred to as SAP traces.

[0142] Figure 9H A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9H In the examples, the repetition with... can be different. Figures 9A to 9GThe manufacturing techniques and structures are similar to those used to form passivation structure 938, conductive structure 946, passivation structure 954, and conductive structure 956. The traces of conductive structure 946 and conductive structure 956 may include SAP traces.

[0143] Figure 9I A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9I In the example, passivation structure 958 may be provided on top of conductive structure 956 and passivation structure 954. External terminals 960 and external interconnects 962 may also be provided. External interconnect 962 may include or refer to, for example, solder balls, bumps, pillars, pads, etc. The elements, features, materials, or manufacturing methods of external terminals 960 and external interconnects 962 may be similar to or the same as the elements, features, materials, or manufacturing methods of external terminals 156 and external interconnects 158 described above.

[0144] Figure 9J A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9J In the example, as previously described, electronic component 840 can be coupled to signal distribution structure 901. For example, contacts 842 of electronic component 840 can be coupled to external interconnects 962 of signal distribution structure 901. As previously described, sealant 860 can be provided on electronic component 840 and signal distribution structure 901. Carrier 972 can be coupled above electronic component 970, opposite signal distribution structure 901. Signal distribution structure 901, coupled with electronic component 840, can be rotated 180 degrees such that carrier 902 is located... Figure 9J The signal distribution structure 901 shown is located above the carrier 972. Figure 8H The carrier 862 is similar to or the same as that in the text.

[0145] Figure 9K A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9K In some examples, the carrier 902 can be removed to expose the separation portion 910 of the passivation structure 904. In some examples, etching can be performed to remove the carrier 902. For example, the carrier 902 may include silicon, and dry etching can be performed to remove the carrier 902. In other examples, laser lift-off can also be performed to remove the carrier 902. For example, the carrier 902 may be a glass carrier, and laser lift-off can be used to separate the carrier 902 from the passivation structure 904. In response to the removal of the carrier 902, the tip 921 of the via 920 remains covered by the passivation structure 904.

[0146] Figure 9L A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9LIn some examples, the separation region 910 of the passivation structure 904 can be removed. In some examples, an etching process can be used to remove the separation portion 910 from the passivation structure 904. The tip 921 can protrude from the passivation structure 904 in response to the removal of the separation portion 910.

[0147] Figure 9M A cross-sectional view of the electronic device 900 during a subsequent manufacturing stage is shown. Figure 9M In the example, the outward terminal 974 can be coupled to the protruding tip 921 of the conductive via 920. The outward terminal 974 can be coupled to the electronic component 840 via the conductive structures 905, 936, 946, and 956 of the signal distribution structure 901. The outward terminal 974 may include an external interconnect 976, which may include, for example, solder balls, bumps, pads, or pillars.

[0148] Now for reference Figures 10A to 10E Example methods for manufacturing terminal 1200 according to various examples are shown. Figures 10A to 10E Various features may include structures and manufacturing techniques similar to those shown and described elsewhere herein. Terminal 1200 and associated electronics may include those for electronic device 900 ( Figures 7A to 8L ), Electronic device 900 ( Figures 9A to 9M The structure and manufacturing techniques described herein are similar to those used in other electronic devices, such as 701, 900, or other electronic devices disclosed herein. In some examples, terminal 1200 may be incorporated into electronic device 701, electronic device 900, or other electronic devices disclosed herein.

[0149] exist Figure 10A In the example, the carrier or substrate can be removed (e.g., Figure 8I The carrier 862 or Figure 9J The carrier 902 in the conductive structure 1206 is used to expose the passivation structure 1204. The separation region or portion 1210 of the passivation structure 1204 may be located above the tip 1207 of the conductive structure 1206. For example, the tip 1207 of the conductive structure 1206 may be covered by the passivation structure 1204. The passivation structure 1204 may be similar to or identical to the passivation structure 702 and / or passivation structure 904 described above.

[0150] Figure 10B A cross-sectional view of terminal 1200 during a subsequent manufacturing stage is shown. Figure 10BIn the example, the separation portion 1210 of the passivation structure 1204 may be removed (e.g., by etching, laser ablation, or other suitable removal techniques), thereby exposing the tip 1207 of the conductive structure 1206. The tip 1207 of the conductive structure 1206 may protrude from the passivation structure 1204. A barrier 1212 and a plated seed crystal 1214 may be provided over the passivation structure 1204 and the tip 1207 of the conductive structure 1206. The barrier 1212 may be located between the conductive structure 1206 and the plated seed crystal 1214. In some embodiments, the barrier 1212 may comprise Ti, TiN, or TiW, and the plated seed crystal may comprise Cu.

[0151] Figure 10C A cross-sectional view of terminal 1200 during a subsequent manufacturing stage is shown. Figure 10C In the example, a photoresist 1215 may be provided over the passivation structure 1204. An opening may be provided in the photoresist 1215 to expose the tip 1207 of the conductive structure 1206 (e.g., the tip of a conductive via). The conductive structure 1213 may be formed by providing a conductive material in the opening defined by the photoresist 1215. The conductive structure 1213 may include a contact 1260 and an external interconnect 1262. In some examples, the contact 1260 may be plated on the tip 1207 using a plated seed die 1214. In some examples, the contact 1260 may include plated copper.

[0152] Figure 10D A cross-sectional view of terminal 1200 during a subsequent manufacturing stage is shown. Figure 10D In the example, the photoresist 1215 can be removed, and portions of the barrier 1212 and seed crystal 1214 located outside the coverage area of ​​the contact 1260 can be removed. Figure 10E It shows Figure 10D A detailed view of terminal 1200 in region E. Seeds 1212 between conductive structures 1213 can be removed to electrically isolate the individual conductive structures 1213. Tip 1207 can protrude from passivation structure 1204 into the inside of contact 1260. The inside of contact 1260 along tip 1207 can have a concave geometry. Tip 1207 can have a convex, circular, spherical, or bulbous geometry. The geometry of the inside of contact 1260 can be substantially mirrored with the geometry of tip 1207. A stop 1212 can be retained between tip 1207 and contact 1260. The geometry of stop 1212 can be on the underside or inside of contact 1260. Tip 1207 protruding from passivation structure 1202 can provide a larger surface area for plated contact 1260, thereby forming a larger interface area between contact 1260 and conductive structure 1206. The increased interface area can improve the electrical reliability of electronic devices with terminals 1200.

[0153] In some examples, electronic devices and related manufacturing techniques can improve the size and reliability of electronic devices by incorporating SAP or hybrid SAP and ETR traces. Vias can be exposed by removing the release layer, and contacts or terminals can be coupled to the vias. The tips of the exposed vias can protrude from the surrounding passivation structure, and these protruding tips can improve adhesion between the contacts and the tips of the exposed vias.

[0154] In various examples, electronic devices may include barrier structures that surround or encircle conductive structures. These four-sided or full-sided barrier structures can suppress oxidation and electron migration, which tends to reduce electronic performance degradation over time. For example, traces, pads, vias, or other conductive elements can be surrounded or encircled by metallic and inorganic layers forming the barrier. The barrier can suppress or prevent oxidation or moisture penetration, which would otherwise degrade or damage the conductive elements over time. Compared to three-sided barrier or other less protective barrier examples for conductive elements, the seed layer and metallic barrier of this disclosure forming a four-sided metallic barrier can improve the electrical performance of the conductive elements over time. The inorganic layer added around the metallic barrier can further enhance protection for the underlying conductive structure.

[0155] This disclosure includes references to certain examples; however, those skilled in the art will understand that various changes can be made and equivalents can be substituted without departing from the scope of this disclosure. Furthermore, modifications can be made to the disclosed examples without departing from the scope of this disclosure. Therefore, this disclosure is not intended to be limited to the disclosed examples, but rather to include all examples falling within the scope of the appended claims.

Claims

1. An electronic device, characterized in that, include: First passivation structure; The first inorganic blocking member is disposed above the first passivation structure; A first metal blocking member is disposed above the first inorganic blocking member; A conductive structure is disposed above the first metal blocking member; A second metal barrier is disposed above the conductive structure; as well as The second inorganic blocking member is disposed above the second metal blocking member.

2. The electronic device according to claim 1, characterized in that, The lateral end of the second metal barrier terminates at a distance of approximately 0.25 μm to approximately 1.5 μm outside the coverage area of ​​the conductive structure.

3. The electronic device according to claim 2, characterized in that, The first metal barrier and the second metal barrier surround the conductive structure.

4. The electronic device according to claim 3, characterized in that, The first inorganic blocking member and the second inorganic blocking member surround the first metal blocking member and the second metal blocking member.

5. The electronic device according to claim 1, characterized in that, The second inorganic barrier contacts the lateral end of the second metal barrier outside the coverage area of ​​the conductive structure.

6. The electronic device according to claim 5, characterized in that, The conductive structure includes traces, and the second inorganic barrier extends continuously between adjacent traces.

7. The electronic device according to claim 1, characterized in that, The first metal barrier comprises titanium, and the second metal barrier comprises nickel.

8. The electronic device according to claim 1, characterized in that, The bottom side of the second metal blocking member contacts the top side of the first metal blocking member.

9. An electronic device, characterized in that, include: A first passivation structure, the first passivation structure including a plurality of protrusions on the upper side of the first passivation structure; A first trace, the first trace being embedded in the first passivation structure and recessed from the protrusion; A second trace is disposed on the protrusion; The second passivation structure is disposed above the first passivation structure, the first trace, and the second trace; A first metal blocking element is disposed between the first trace and the first passivation structure; A second metal barrier is disposed between the second trace and the first passivation structure; as well as The first inorganic blocking member is disposed above the upper side of the first trace, on the sidewall of the protrusion, and between the second trace and the second passivation structure.

10. The electronic device according to claim 9, characterized in that, The first metal barrier includes titanium, and the first inorganic barrier includes at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), or silicon oxynitride (SiON).

11. The electronic device according to claim 9, characterized in that, Also includes: A conductive via, wherein the conductive via is located in the first passivation structure; as well as The second passivation structure is located above the first inorganic barrier and the conductive via.

12. The electronic device according to claim 11, characterized in that, The second passivation structure contacts the sidewall of the first passivation structure above the conductive via.

13. The electronic device according to claim 11, characterized in that, The second passivation structure contacts the top side of the conductive via.

14. The electronic device according to claim 11, characterized in that, The first inorganic barrier contacts the top side of the conductive via.

15. The electronic device according to claim 9, characterized in that, The second trace intersects the first trace laterally.

16. The electronic device according to claim 9, characterized in that, Also includes: The second passivation structure is located above the first inorganic barrier. A third trace is disposed in the second passivation structure, wherein the third trace is recessed from the upper side of the second passivation structure; A third metal barrier is located between the third trace and the second passivation structure; as well as The second inorganic blocking element is located above the third trace. The third trace is vertically aligned with the first trace.

17. An electronic device, characterized in that, include: A signal distribution structure, the signal distribution structure including a first passivation structure and a conductive structure, the conductive structure including a conductive via extending through the first passivation structure, wherein the tip of the conductive via protrudes from the first passivation structure at a first side of the signal distribution structure; An electronic component, the electronic component being coupled to a second side of a signal distribution structure opposite to the first side of the signal distribution structure; as well as An external interconnect coupled to the tip of the conductive via.

18. The electronic device according to claim 17, characterized in that, The conductive structure includes a plurality of first traces embedded in the first passivation structure.

19. The electronic device according to claim 17, characterized in that, The conductive structure includes a plurality of first traces disposed above the first passivation structure.

20. The electronic device according to claim 19, characterized in that, Also includes: A second passivation structure is located above the plurality of first traces and the first passivation structure.

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