Package structure and method of manufacturing the same

Abstract

The application discloses a packaging structure and a manufacturing method thereof. The packaging structure comprises at least two fan-out modules, a bridge chip and a substrate. Each fan-out module comprises a first circuit area and a second circuit area. The bridge chip is arranged on one side of the at least two fan-out modules and is electrically connected to the first circuit areas of the at least two fan-out modules through a plurality of first connecting structures to realize signal transmission between the modules. The substrate is arranged on the same side of the at least two fan-out modules and is electrically connected to the second circuit areas of the at least two fan-out modules through a plurality of second connecting structures. The arrangement interval of the first connecting structures is smaller than that of the second connecting structures. Thus, the high-density connection of the bridge chip and the substrate connection can be realized in stages, the difficulty of synchronous alignment of the mixed pitch connection is reduced, and the packaging and bonding reliability is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, specifically to a packaging structure and its manufacturing method. Background Technology

[0002] With the development of applications such as high-performance computing, artificial intelligence, and high-speed data transmission, semiconductor packaging structures are gradually evolving towards multi-chip, multi-core, and multi-module integration. To achieve high-density signal transmission between chips or modules, bridging chips are typically included in the packaging structure, and electrical connections are achieved through fan-out modules, redistribution layers, bumps, and substrates.

[0003] In Elevated Fan Out Bridge on Substrate (EFBoS) packaging structures, the bridge die is typically located on the substrate side to achieve high-density interconnection between fan-out modules. In this type of structure, connection structures with different pitches usually exist between the fan-out modules and the substrate: the connection structures with larger pitches are used to connect the fan-out modules (FOMs) to relatively thicker lines in the substrate; the connection structures with smaller pitches are used to achieve high-density interconnection between the fan-out modules and the substrate-side bridge die.

[0004] However, with the increase in package size and fan-out module size, the differences in the coefficients of thermal expansion between different materials such as the fan-out module, substrate, bridging chip, molding material, and underfill material can lead to significant relative displacement. In traditional processes, the completed fan-out module usually needs to be bonded to the substrate. In this case, large-pitch and small-pitch connection structures need to be aligned synchronously in the same bonding process. For smaller connection structures with smaller spacing, the tolerable lateral offset is low, and bonding failures such as solder not wetting, solder joint cracking, open circuits, or abnormal contact resistance can easily occur due to bump misalignment.

[0005] Furthermore, when the bridging chip is pre-installed on the substrate side, its position is easily affected by substrate thermal expansion, warping, and process deformation, thereby increasing the alignment difficulty between the bridging chip and the high-density circuit area in the fan-out module. If the substrate side also needs to pre-form a structure containing the bridging chip, it may further increase the substrate process complexity and sample transfer time.

[0006] Therefore, how to reduce the difficulty of synchronously aligning and bonding small-pitch connection structures and large-pitch connection structures in large-size packaging structures, reduce bump offset caused by mismatch of material thermal expansion coefficients and substrate deformation, and improve the bonding reliability between bridging chips and fan-out modules and substrates have become technical problems that urgently need to be solved in this field. Summary of the Invention

[0007] In a first aspect, this application provides a packaging structure, including: At least two fan-out modules, each fan-out module including a first line area and a second line area; A bridging chip is disposed on one side of the at least two fan-out modules and electrically connected to the first line areas of the at least two fan-out modules respectively through multiple first connection structures, so that the bridging chip is used to realize signal transmission between the at least two fan-out modules; and A substrate is disposed on one side of the at least two fan-out modules and is electrically connected to the second circuit area of ​​the at least two fan-out modules through a plurality of second connection structures; The spacing between the plurality of first connection structures is smaller than the spacing between the plurality of second connection structures, and the bridging chip is fixed to the at least two fan-out modules and spaced apart from the substrate.

[0008] In some embodiments, the first line area is a dense line area in the fan-out module for realizing high-density interconnection between modules, and the second line area is a sparse line area in the fan-out module for electrical connection with the substrate, wherein the line density of the first line area is greater than the line density of the second line area.

[0009] In some embodiments, the bridging chip is disposed between two adjacent fan-out modules and is electrically connected to the first line area of ​​each of the two adjacent fan-out modules.

[0010] In some embodiments, the plurality of first connection structures include microbumps, and the plurality of second connection structures include at least one of C4 bumps, copper pillars, and solder bumps.

[0011] In some embodiments, the packaging structure further includes a first filling layer, which fills at least between the bridge chip and the at least two fan-out modules.

[0012] In some embodiments, the first filler layer includes at least one of underfill, molding material, and adhesive film, the at least two fan-out modules are arranged side by side and there is a gap between adjacent fan-out modules, and the first filler layer is also disposed in the gap between adjacent fan-out modules.

[0013] In some embodiments, the packaging structure further includes a second filler layer disposed between the substrate and the at least two fan-out modules, and at least partially covering the bridge chip.

[0014] In some embodiments, the substrate has a groove, and the bridging chip is at least partially accommodated within the groove.

[0015] In some embodiments, an underfill material or a molding compound is provided between the bridging chip and the inner wall of the groove.

[0016] In some embodiments, the bridging chip includes a connection surface facing the at least two fan-out modules and a back surface facing away from the connection surface, the back surface being provided with a back protective film.

[0017] In some embodiments, the back protective film is an adhesive protective film and is located between the back of the bridging chip and the inner wall of the groove.

[0018] In some embodiments, the bridging chip is electrically connected to the first line area of ​​at least one of the at least two fan-out modules via a hybrid bonding structure.

[0019] In some embodiments, the substrate is electrically connected to the second line area of ​​at least one of the at least two fan-out modules via a hybrid bonding structure.

[0020] In some embodiments, at least one of the at least two fan-out modules includes an input / output chip.

[0021] In some embodiments, the input / output chip is signal-connected to the bridge chip via the first line area and to the substrate via the second line area.

[0022] In some embodiments, the at least one fan-out module includes an intermediary layer disposed on the signal transmission path between the input / output chip and the bridge chip.

[0023] In some embodiments, the intermediary layer includes an intermediary structure through which the input / output chip is signal-connected to the bridge chip.

[0024] Secondly, this application provides a method for manufacturing a packaging structure, including: At least two fan-out modules are provided on a first carrier board, each of the at least two fan-out modules including a first line area and a second line area; A bridging chip is disposed on one side of the at least two fan-out modules, and the bridging chip is electrically connected to the first line area of ​​the at least two fan-out modules respectively through multiple first connection structures, so that the bridging chip is used to realize signal transmission between the at least two fan-out modules; and The substrate is assembled to one side of the at least two fan-out modules, and the substrate is electrically connected to the second circuit area of ​​the at least two fan-out modules through a plurality of second connection structures; The spacing between the plurality of first connection structures is smaller than the spacing between the plurality of second connection structures.

[0025] In some embodiments, the bonding step between the bridging chip and the first circuit area of ​​the at least two fan-out modules, and the bonding step between the substrate and the second circuit area of ​​the at least two fan-out modules, are performed in different bonding steps.

[0026] In some embodiments, during the assembly of the substrate to the at least two fan-out modules, a second filler material is filled between the substrate and the at least two fan-out modules, such that the bridging chip and the substrate are spaced apart by the second filler material.

[0027] To address the technical challenges of simultaneously aligning and bonding small-pitch and large-pitch connection structures in large-size packaging structures, and the susceptibility of bridging chips to bump misalignment due to substrate thermal expansion or warping, which further reduces bonding reliability, this application provides a packaging structure and its manufacturing method. Before assembling the substrate to the fan-out modules, the bridging chip is first positioned on one side of at least two fan-out modules. A first connection structure with a small spacing is used to electrically connect the bridging chip to the first circuit area of ​​the fan-out module. Then, a second connection structure with a larger spacing is used to electrically connect the substrate to the second circuit area of ​​the fan-out module. This achieves, but is not limited to, the following technical effects: First, since the bonding steps between the bridging chip and the first circuit area of ​​the fan-out module, and the bonding steps between the substrate and the second circuit area of ​​the fan-out module, are performed separately, the first connection structure with a smaller pitch is mainly aligned during the bridging chip bonding stage, while the second connection structure with a larger pitch is mainly aligned during the substrate bonding stage. This avoids simultaneously controlling the alignment accuracy of small-pitch and large-pitch connection structures in the same bonding process, thereby reducing the process difficulty of synchronously aligning mixed-pitch connection structures.

[0028] Secondly, since the bridging chip is pre-fixed to the fan-out module side before substrate assembly and enables signal transmission between at least two fan-out modules through the first circuit area of ​​the fan-out module, the bridging chip no longer needs to be pre-installed on the substrate side. Therefore, during the subsequent bonding process between the substrate and the fan-out module, the position of the bridging chip is less likely to shift directly due to the thermal expansion, contraction, or warping of the substrate, thus helping to reduce the relative positional deviation between the bridging chip and the high-density circuit area of ​​the fan-out module.

[0029] Furthermore, since the spacing between the first connection structures is smaller than that between the second connection structures, and the first connection structure corresponds to the high-density interconnection between the bridge chip and the fan-out module, while the second connection structure corresponds to the relatively low-density interconnection between the substrate and the fan-out module, this application can process the high-density interconnection area and the substrate connection area in stages during the manufacturing process. Therefore, while meeting the high-density signal transmission requirements between modules, it reduces the risk of solder not wetting, solder joint cracking, or open circuits caused by mismatched coefficients of thermal expansion, process transfer errors, or substrate deformation in small-pitch connection structures.

[0030] Furthermore, since the bridging chip is fixed to the fan-out module and spaced apart from the substrate, or the bridging chip and the substrate are separated by a filler material, the bridging chip and the substrate do not need to be directly bonded by small-pitch bumps. This reduces the bonding difficulties caused by substrate expansion and contraction in traditional substrate-side bridging structures, and the filler material can support and buffer the gaps around the bridging chip, thereby improving the mechanical reliability of the package structure.

[0031] Furthermore, in the embodiment where the substrate has a recess and the bridging chip is at least partially accommodated within the recess, since the bridging chip can enter the partial accommodating space of the substrate, there is no need to reserve an excessively large vertical gap between the substrate and the fan-out module for the bridging chip. Thus, while maintaining the structural advantage of the bridging chip being pre-positioned on the fan-out module side, the local stacking height of the package structure can be reduced, and mechanical interference between the bridging chip and the substrate can be minimized.

[0032] Furthermore, in embodiments where a back protective film is provided on the back side of the bridging chip, since the back protective film is located between the back side of the bridging chip and the substrate groove or filling material, it can form isolation and buffer for the back side of the bridging chip during substrate assembly, filling material curing, or subsequent thermal cycling. This reduces the risk of cracking of the silicon back side of the bridging chip due to localized contact stress, filling stress, or thermal stress concentration.

[0033] Furthermore, in embodiments where the bridging chip and / or substrate are electrically connected to the fan-out module via a hybrid bonding structure, the interconnect height between the bridging chip and the fan-out module, or between the substrate and the fan-out module, can be reduced because the hybrid bonding structure can reduce or replace the connection height required by conventional solder bumps. This further reduces the package thickness and improves interconnect reliability in thinner package structures. Attached Figure Description

[0034] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 This is a schematic cross-sectional view of the existing FOCoS-B structure 100 along the first vertical section. Figure 2 This is a schematic cross-sectional view of the existing EFBoS structure 200 along the first vertical section. Figure 3A This is a cross-sectional schematic diagram of the packaging structure 300A according to an embodiment of this application, obtained along a first vertical section. Figure 3B This is a cross-sectional view of the packaging structure 300B according to an embodiment of this application, obtained along a first vertical section. Figure 3C This is a cross-sectional schematic diagram of the packaging structure 300C according to an embodiment of this application, obtained along a first vertical section. Figure 3D This is a cross-sectional schematic diagram of a packaging structure 300 according to an embodiment of this application, obtained along a first vertical section. Figures 4A to 4E-1 as well as Figure 4F-1 This is a schematic diagram of the manufacturing steps of the packaging structure 300A according to an embodiment of this application; Figures 4A to 4E-1 as well as Figure 4F-2 This is a schematic diagram of the manufacturing steps of the packaging structure 300B according to an embodiment of this application; Figures 4A to 4E-1 as well as Figure 4F-3 This is a schematic diagram of the manufacturing steps of the packaging structure 300C according to an embodiment of this application; Figures 4A to 4E-2 as well as Figure 4F-4 This is a schematic diagram of the manufacturing steps of the packaging structure 300D according to an embodiment of this application.

[0035] Explanation of reference numerals / symbols in the attached diagram: 100: FOCoS-B structure; 110: Substrate; 111: Substrate body; 112: Substrate circuit layer; 113: Substrate conductive structure; 114: Substrate side pads; 120: Fan-out module; 121: Encapsulation layer; 122: Redeploy structure; 123: Vertical interconnect structure; 124: First module pad; 125: Second module pad; 130: Chipset; 131: First input / output chip; 132: Second input / output chip; 140: Chip interconnection structure; 150: Bridging interconnect chip; 151: Interconnect chip body; 152: Interconnect pad; 153: Bridging line; 160: Module-substrate connection structure; 161: Module-substrate bump; 162: Underfill material; 200: EFBOS structure; 210: First fan-out module; 211: First module body; 212: First rewiring structure; 213: First input / output chip; 214: First interconnect chip; 215: First connection pad group; 2151: First high-density pad; 2152: First low-density pad; 220: Second fan-out module; 221: Second module body; 222: Second rewiring structure; 223: Second input / output chip; 224: Second interconnect chip; 225: Second connection pad group; 2251: Second high-density pad; 2252: Second low-density pad; 230: Substrate; 231: Substrate body; 232: Substrate circuit layer; 233: Substrate conductive structure; 234: Substrate pad; 2341: Coarse circuit pad; 2342: Bridging pad; 235: Solder mask layer; 240: Substrate-side bridging structure; 241: Bridging chip; 242: First bridging pad; 243: Second bridging pad; 244: Bridging line; 250: First connecting structure; 251: First micro-bump; 252: Second micro-bump; 260: Second connection structure; 300A: Package structure; 300B: Package structure; 300C: Package structure; 300D: Package structure; 310: First fan-out module; 312: First circuit area; 313: Second circuit area; 315: First input / output chip; 317: First interposer layer; 3171: First interposer structure; 320: Second fan-out module; 322: First circuit area; 323: Second circuit area; 325: Second input / output chip; 327: Second interposer layer; 3271: Second interposer structure; 330: Bridge chip; 332: Connector side; 333: Back side; 336: Back protective film; 340: Substrate; 343: Substrate pad; 344: Groove; 345: Groove inner wall; 350: First connection structure; 360: Second connection structure; 370: First fill layer; 380: Second filler layer; 390: Hybrid bonding structure; G: Module gap; 400A: First intermediate structure; 400B: Second intermediate structure; 400C: Third intermediate structure; 400D: Fourth intermediate structure; 400E: Fifth intermediate structure; 400F-1: Sixth intermediate structure; 400F-2: Sixth intermediate structure; 400F-3: Sixth intermediate structure; 400F-4: Sixth intermediate structure; 410: Glass substrate; 420: Basic interconnect structure; 421: Copper pillar structure; 422: First assembled chip; 423: Multilayer redistribution structure; 430: Second assembly chip; 431: Input / output chip; 432: Computing chip; 450: Fan-out type module unit; 460: First carrier board; 461: Temporary adhesive layer; 470: Insulation or protective layer; 471: Connecting pad. Detailed Implementation

[0036] The specific embodiments of this application will be described below with reference to the accompanying drawings and examples. Those skilled in the art can easily understand the technical problems solved by this application and the resulting technical effects through the content described herein. It is understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not intended to limit the invention. Furthermore, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0037] It should be readily understood that the meanings of “on,” “above,” and “on top of” in this application should be interpreted in the broadest sense, such that “on” means not only “directly on something,” but also “on something” including intermediate components or layers existing between the two.

[0038] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” may be used herein to describe the relationship of one element or component to another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90° or otherwise), and the spatial relative descriptive terms used herein may be interpreted accordingly.

[0039] As used herein, the term "layer" refers to a portion of material comprising a region of a certain thickness. A layer may extend over the entirety of an underlying or upper layer structure, or may have a extent smaller than that of the underlying or upper layer structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure with a thickness less than that of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a tapered surface. A substrate may be a single layer, which may include one or more layers, and / or may have one or more layers on, above, and / or below it. A single layer may include multiple layers. For example, a semiconductor layer may include one or more doped or undoped semiconductor layers, and may have the same or different materials.

[0040] As used herein, the term "substrate" refers to the material on which subsequent material layers are added. The substrate itself may be patterned. The material added on top of the substrate may be patterned or may remain unpatterned. Furthermore, the substrate may comprise a wide variety of semiconductor materials, such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate may be made of a non-conductive material, such as glass, plastic, or sapphire wafers. Further alternatively, the substrate may have semiconductor devices or circuits formed therein.

[0041] It should be noted that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art in understanding and reading the content described in the specification, and are not intended to limit the scope of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effects and objectives of this application, should still fall within the scope of the technical content disclosed in this application. Furthermore, the terms such as "above," "first," "second," and "a" used in this specification are merely for clarity of description and are not intended to limit the scope of this application. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of this application's implementation.

[0042] As used herein, the terms “substantially,” “materially,” “approximately,” and “about” are used to indicate and explain minor variations. For example, when used in conjunction with numerical values, the above terms may refer to a range of variation less than or equal to ±10% of the corresponding numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. As another embodiment, the thickness of a film or layer being “substantially uniform” may refer to the average thickness of the film or layer being less than or equal to ±10% of the standard deviation, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces that are within 50 μm along the same plane (such as within 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm along the same plane). If, for example, two components overlap or overlap within 200 μm, 150 μm, 100 μm, 50 μm, 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm, then the two components can be considered "substantially aligned". If the angle between two surfaces or components is, for example, 90° ± 10° (such as ±5°, ±4°, ±3°, ±2°, ±1°, ±0.5°, ±0.1°, or ±0.05°), then the two surfaces or components can be considered "substantially perpendicular". When used in conjunction with an event or situation, the terms "substantially," "substantially," "approximately," and "about" can refer to the exact occurrence of the event or situation as well as the very close approximation of the event or situation.

[0043] It should be noted that the first vertical sectional view mentioned in this application can be a sectional view obtained by cutting and observing along the front view or rear view; the second vertical sectional view can be a sectional view obtained by cutting and observing along the left view or right view; the horizontal sectional view or planar sectional view can be a sectional view obtained by cutting and observing along the top view or bottom view. The above orientations and sectional names are only used to illustrate the relative positional relationship between the structures shown in the figures and do not constitute a limitation on the actual use direction or manufacturing direction of the product.

[0044] Furthermore, where there is no conflict, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0045] As described in the background section, the relevant packaging structures are still difficult to meet the needs of actual semiconductor packaging.

[0046] Figure 1This is a schematic cross-sectional view of the existing FOCoS-B structure 100 along the first vertical section.

[0047] like Figure 1 As shown, the FOCoS-B structure 100 includes a substrate 110, a fan-out module 120 disposed on the substrate 110, a bridging interconnect chip 150 disposed in the fan-out module 120, a chipset 130 disposed on the fan-out module 120, and a module-substrate connection structure 160 disposed between the fan-out module 120 and the substrate 110.

[0048] The substrate 110 includes a substrate body 111, a substrate circuit layer 112 disposed in the substrate body 111, a substrate conductive structure 113 penetrating or connecting different substrate circuit layers 112, and a substrate side pad 114 disposed on the side of the substrate body 111 near the fan-out module 120. The substrate circuit layer 112 is used to realize the electrical connection between the fan-out module 120 and the external structure, the substrate conductive structure 113 is used to realize the vertical conduction between different circuit layers inside the substrate 110, and the substrate side pad 114 is used to form an electrical connection with the fan-out module 120.

[0049] A fan-out module 120 is disposed on one side of the substrate 110. The fan-out module 120 includes a molding layer 121, a redistribution structure 122 disposed in the molding layer 121, a vertical interconnect structure 123 penetrating the molding layer 121, a first module pad 124 disposed on the side of the fan-out module 120 near the chipset 130, and a second module pad 125 disposed on the side of the fan-out module 120 near the substrate 110. The redistribution structure 122 is used to redistribute the signals of the chipset 130 to the bridging interconnect chip 150 and / or the substrate 110, and the vertical interconnect structure 123 is used to realize the electrical connection between the upper and lower surfaces of the fan-out module 120.

[0050] Chipset 130 is disposed on the side of fan-out module 120 away from substrate 110. Chipset 130 includes a first input / output chip 131, a second input / output chip 132, and an optional computing chip (…). Figure 1 (Not shown in the image). The first input / output chip 131, the second input / output chip 132, and / or the computing chip are electrically connected to the first module pad 124 of the fan-out module 120 via a chip connection structure 140. The chip connection structure 140 may include microbumps, copper pillars, solder bumps, or other conductive connection structures.

[0051] The bridging interconnect chip 150 is disposed within the fan-out module 120, or in a densely packed area of ​​the fan-out module 120. The bridging interconnect chip 150 includes an interconnect chip body 151, interconnect pads 152 disposed on the interconnect chip body 151, and bridging lines 153 disposed within the interconnect chip body 151. The bridging interconnect chip 150 is electrically connected to the redistribution structure 122 of the fan-out module 120 via the interconnect pads 152. A portion of the high-density signal between the first input / output chip 131 and the second input / output chip 132 can be transmitted sequentially through the first input / output chip 131, the chip connection structure 140, the redistribution structure 122, the bridging interconnect chip 150, the redistribution structure 122, and the chip connection structure 140 to the second input / output chip 132.

[0052] A module-substrate connection structure 160 is disposed between the fan-out module 120 and the substrate 110. The module-substrate connection structure 160 includes a plurality of module-substrate bumps 161 and an underfill material 162 disposed between or around adjacent module-substrate bumps 161. The plurality of module-substrate bumps 161 are respectively connected to the second module pad 125 and the substrate side pad 114 to realize the electrical connection between the fan-out module 120 and the substrate 110.

[0053] In the aforementioned FOCoS-B structure 100, the bridging interconnect chip 150 is mainly disposed in the fan-out module 120 and is used to realize high-density signal transmission between chips within the fan-out module 120. In other words, the main function of the bridging interconnect chip 150 is to realize the interconnection between chips, rather than serving as an inter-module bridging structure disposed on the substrate side.

[0054] However, as package sizes and fan-out module sizes gradually increase, if the bridging interconnect chip 150 and its related high-density interconnect structures are still primarily located within the fan-out module 120, the area and process dimensions of the fan-out module 120 itself will increase accordingly, thereby increasing the difficulty of rewiring patterning, warpage control, carrier board handling, and dicing in the fan-out process. Furthermore, when high-density interconnection between multiple fan-out modules is required, the bridging interconnect chip 150 in the FOCoS-B structure 100 is mainly used for chip interconnection within the same fan-out module 120, making it difficult to directly apply to the high-density bridging requirements between modules on the substrate side. Therefore, when this structure evolves towards larger package sizes or high-density interconnect architectures between modules, it still suffers from problems such as complex processes, larger module sizes, and limited scalability.

[0055] Figure 2 This is a schematic cross-sectional view of the existing EFBoS structure 200 along the first vertical section.

[0056] like Figure 2As shown, the EFBoS structure 200 includes a first fan-out module 210, a second fan-out module 220, a substrate 230, a substrate-side bridging structure 240 disposed on the substrate 230 side, a first connection structure 250 disposed between the fan-out module and the substrate-side bridging structure 240, and a second connection structure disposed between the fan-out module and the substrate 230. Figure 2 (Not shown in the image).

[0057] The first fan-out module 210 includes a first module body 211, a first rewiring structure 212 disposed in the first module body 211, a first input / output chip 213 disposed on the first module body 211, and a first computing chip disposed on the first module body 211. Figure 2 (Not shown in the image) A first interconnect chip 214 is disposed in the first module body 211, and a first connection pad group 215 is disposed on the side of the first module body 211 near the substrate 230. The first connection pad group 215 includes a first high-density pad 2151 and a first low-density pad 2152. The first high-density pad 2151 is used for electrical connection with the substrate-side bridging structure 240, and the first low-density pad 2152 is used for electrical connection with a relatively thick line area in the substrate 230.

[0058] The second fan-out module 220 includes a second module body 221, a second rewiring structure 222 disposed in the second module body 221, a second input / output chip 223 disposed on the second module body 221, and a second computing chip disposed on the second module body 221. Figure 2 (Not shown in the image) A second interconnect chip 224 is disposed in the second module body 221, and a second connection pad group 225 is disposed on the side of the second module body 221 near the substrate 230. The second connection pad group 225 includes a second high-density pad 2251 and a second low-density pad 2252. The second high-density pad 2251 is used for electrical connection with the substrate-side bridging structure 240, and the second low-density pad 2252 is used for electrical connection with a relatively thick line area in the substrate 230.

[0059] The substrate 230 includes a substrate body 231, a substrate circuit layer 232 disposed in the substrate body 231, a substrate conductive structure 233 connecting different substrate circuit layers 232, substrate pads 234 disposed on the side of the substrate body 231 near the first fan-out module 210 and the second fan-out module 220, and a solder resist layer 235 disposed on the surface of the substrate body 231. The substrate pads 234 include coarse line pads 2341 for connecting with the first low-density pads 2152 and the second low-density pads 2252, and bridging pads 2342 for disposing of or connecting the substrate-side bridging structure 240.

[0060] A substrate-side bridging structure 240 is disposed on the side of the substrate 230 near the first fan-out module 210 and the second fan-out module 220. The substrate-side bridging structure 240 includes a bridging chip 241, a first bridging pad 242 and a second bridging pad 243 disposed on the bridging chip 241, and bridging lines 244 disposed in the bridging chip 241. The bridging chip 241 can be electrically connected to the substrate 230 via the bridging pads 242, or fixed to the substrate 230 by molding material, underfill material, or other encapsulation materials. The bridging lines 244 provide a high-density signal transmission path between the first fan-out module 210 and the second fan-out module 220.

[0061] The first connection structure 250 is used to realize high-density interconnection between the first fan-out module 210 and the second fan-out module 220 and the substrate-side bridging structure 240. The first connection structure 250 includes a first microbump 251 and a second microbump 252. The first microbump 251 connects the first high-density pad 2151 and the first bridging pad 242, and the second microbump 252 connects the second high-density pad 2251 and the second bridging pad 243. Thus, the signal between the first input / output chip 213 and the second input / output chip 223 can be transmitted via the first rewiring structure 212, the first interconnect chip 214, the first microbump 251, the bridging chip 241, the second microbump 252, the second interconnect chip 224, and the second rewiring structure 222.

[0062] Second connection structure ( Figure 2 (Not shown in the image) is used to implement a relatively low-density interconnect between the first fan-out module 210 and the second fan-out module 220 and the substrate 230. The second connection structure includes a first large-pitch bump ( Figure 2 (not shown in the image) and the second largest pitch bump ( Figure 2 (Not shown in the diagram). The first large-pitch bump connects the first low-density pad 2152 and the coarse-line pad 2341 of the substrate 230, and the second large-pitch bump connects the second low-density pad 2252 and the coarse-line pad 2341 of the substrate 230. The second connection structure is mainly used to transmit general signals, power signals, ground signals, or other signals that do not require high-density transmission through the substrate-side bridging structure 240.

[0063] In the aforementioned EFBoS structure 200, a substrate-side bridging structure 240 is pre-installed on the substrate 230 side. The spacing between the first connecting structures 250 and the second connecting structures is smaller than the spacing between the second connecting structures; that is, the first connecting structures 250 are small-pitch connecting structures, and the second connecting structures are large-pitch connecting structures. When assembling the first fan-out module 210 and the second fan-out module 220 onto the substrate 230, the first connecting structures 250 and the second connecting structures need to be aligned simultaneously. In other words, during the assembly process, it is necessary to accurately align the small-pitch first micro-bumps 251 and second micro-bumps 252 with the substrate-side bridging structure 240, and also to accurately align the large-pitch first large-pitch bumps and second large-pitch bumps with the coarse-line pads 2341 of the substrate 230.

[0064] However, the first fan-out module 210, the second fan-out module 220, the substrate 230, and the bridging chip 241 typically have different coefficients of thermal expansion. During hot pressing, reflow, cooling, or other temperature changes, the first fan-out module 210 and the second fan-out module 220 are prone to different degrees of thermal expansion or contraction relative to the substrate 230. Since the substrate-side bridging structure 240 is pre-installed on the substrate 230, its position is affected by the thermal expansion, warpage, or process deformation of the substrate 230. Therefore, during assembly, relative misalignment can easily occur between the first high-density pad 2151, the second high-density pad 2251, and the first bridging pad 242 and the second bridging pad 243 on the bridging chip 241.

[0065] For the large-pitch bumps in the second connection structure, due to their larger bump size and tolerable offset, some alignment misalignment can still be absorbed through solder wetting or collapse processes. However, for the small-pitch micro-bumps in the first connection structure 250, due to their smaller size, smaller spacing, and lower tolerable lateral offset, excessive relative offset can easily lead to joint failures such as unwetted solder, solder joint cracking, open circuits, or abnormal contact resistance.

[0066] Furthermore, since the substrate-side bridging structure 240 in the EFBoS structure 200 needs to be pre-formed on the substrate 230, the mounting, underfilling, molding, and related circuit fabrication of the bridging chip 241 may depend on the substrate manufacturing process or an external substrate supplier. This approach not only increases the process complexity of the substrate 230 but may also introduce uncertainties in substrate process yield, production cycle, sample transfer time, and delivery schedule. Therefore, although the EFBoS structure 200 can achieve high-density interconnection between modules, it still faces challenges such as high alignment difficulty, insufficient bonding reliability, and poor process controllability in scenarios involving large-size packages and synchronous alignment and bonding of mixed-pitch connection structures.

[0067] refer to Figure 3A , Figure 3AThis is a cross-sectional schematic diagram of the packaging structure 300A according to an embodiment of this application, obtained along a first vertical section.

[0068] In some embodiments, such as Figure 3A As shown, the package structure 300A includes at least two fan-out modules, a bridge chip 330, a substrate 340, a first connection structure 350, and a second connection structure 360. For ease of explanation, the following description uses the package structure 300A including a first fan-out module 310 and a second fan-out module 320 as an example, but this application does not limit the specific number of fan-out modules.

[0069] The first fan-out module 310 includes a first line area 312 and a second line area 313, and the second fan-out module 320 includes a first line area 322 and a second line area 323. The first line areas 312 and 322 are used to connect to the bridging chip 330, and the second line areas 313 and 323 are used to connect to the substrate 340. The first line areas 312 and 322 and the second line areas 313 and 323 can be located on the same side of the corresponding fan-out modules, so that the bridging chip 330 and the substrate 340 are both disposed on the same side of the first fan-out module 310 and the second fan-out module 320.

[0070] A bridging chip 330 is disposed on one side of the first fan-out module 310 and the second fan-out module 320, and is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 respectively through multiple first connection structures 350. Thus, the bridging chip 330 provides a signal transmission path between the first fan-out module 310 and the second fan-out module 320. In other words, signals in the first fan-out module 310 can be transmitted to the second fan-out module 320 through the first line area 312, the first connection structures 350, the bridging chip 330, the first connection structures 350, and the first line area 322 of the second fan-out module; correspondingly, signals in the second fan-out module 320 can also be transmitted to the first fan-out module 310 through the bridging chip 330.

[0071] The substrate 340 is disposed on one side of the first fan-out module 310 and the second fan-out module 320, and is electrically connected to the second line area 313 of the first fan-out module 310 and the second line area 323 of the second fan-out module 320 respectively through multiple second connection structures 360. Thus, the substrate 340 can transmit signals, transmit power, and / or connect to the first fan-out module 310 and the second fan-out module 320 through the second connection structures 360.

[0072] In this embodiment, the spacing between the plurality of first connection structures 350 is smaller than the spacing between the plurality of second connection structures 360. That is, the connection structure between the bridging chip 330 and the first line areas 312 and 322 has a relatively small spacing, while the connection structure between the substrate 340 and the second line areas 313 and 323 has a relatively large spacing. Therefore, the connection area corresponding to the bridging chip 330 and the connection area corresponding to the substrate 340 are structurally distinguished as connection areas with different spacing.

[0073] Furthermore, the bridging chip 330 is fixed to the first fan-out module 310 and the second fan-out module 320, and is spaced apart from the substrate 340. That is, the bridging chip 330 is not pre-fixed to the substrate 340, but is fixed to the fan-out module side; after the substrate 340 is disposed on one side of the first fan-out module 310 and the second fan-out module 320, the bridging chip 330 and the substrate 340 maintain a spaced relationship, and the bridging chip 330 does not need to be directly fixed to the substrate 340.

[0074] Based on the above structure, since the bridging chip 330 is electrically connected to the first line areas 312 and 322 through the first connection structure 350, and the substrate 340 is electrically connected to the second line areas 313 and 323 through the second connection structure 360, and the arrangement spacing of the first connection structure 350 is smaller than that of the second connection structure 360, the small-pitch connection area corresponding to the bridging chip 330 and the large-pitch connection area corresponding to the substrate 340 are structurally separated. In this way, during the manufacturing process, the connection relationship between the bridging chip 330 and the first line areas 312 and 322 can be formed first, and then the connection relationship between the substrate 340 and the second line areas 313 and 323 can be formed, thereby avoiding the need for the small-pitch connection structure and the large-pitch connection structure to simultaneously complete high-precision alignment during the same bonding process.

[0075] Furthermore, since the bridging chip 330 is fixed to the first fan-out module 310 and the second fan-out module 320, rather than to the substrate 340, the relative position between the bridging chip 330 and the first line areas 312 and 322 is mainly determined by the structural relationship on the fan-out module side. Even if the substrate 340 undergoes thermal expansion, contraction, or warping during subsequent bonding or temperature changes, the bridging chip 330 is unlikely to experience the same degree of positional shift as the substrate 340. This reduces the risk of alignment misalignment between the bridging chip 330 and the first line areas 312 and 322 due to substrate 340 deformation.

[0076] Therefore, this embodiment can solve the technical problems of high difficulty in synchronously aligning small-pitch and large-pitch connection structures in existing packaging structures, and the easy occurrence of bonding misalignment due to substrate thermal expansion or warping when the bridging chip is placed on the substrate side. By fixing the bridging chip 330 to the fan-out module side and electrically connecting it to the first line areas 312 and 322 through the first connection structure 350 with a smaller pitch, while simultaneously electrically connecting the substrate 340 to the second line areas 313 and 323 through the second connection structure 360 ​​with a larger pitch, the alignment difficulty of the mixed-pitch connection structure can be reduced, and the bonding reliability of the signal transmission path between the bridging chip 330 and the fan-out module can be improved.

[0077] In some embodiments, the first line region 312 of the first fan-out module 310 is a dense line region in the first fan-out module 310 used to achieve high-density interconnection between modules, and the second line region 313 of the first fan-out module 310 is a sparse line region in the first fan-out module 310 used to electrically connect with the substrate 340. The first line region 322 of the second fan-out module 320 is a dense line region in the second fan-out module 320 used to achieve high-density interconnection between modules, and the second line region 323 of the second fan-out module 320 is a sparse line region in the second fan-out module 320 used to electrically connect with the substrate 340.

[0078] Here, the densely packed line area can be understood as the line area used for transmitting high-speed or high-density signals between modules. Since signal transmission between modules typically requires a high number of signal channels and short interconnect paths, the lines in the first line areas 312 and 322 can have relatively small line widths, line spacings, or pad arrangement spacing, thereby providing high line density within a limited area. The bridging chip 330 is electrically connected to the first line areas 312 and 322 via the first connection structure 350, thereby providing a high-density signal transmission path between the first fan-out module 310 and the second fan-out module 320.

[0079] The sparsely populated area can be understood as the area of ​​lines used to achieve electrical connections between the fan-out modules and the substrate 340. The second line areas 313 and 323 can be used to transmit general signals, power signals, ground signals, or other signals connected to the substrate 340. Compared to the first line areas 312 and 322, the second line areas 313 and 323 do not need to arrange the same number of high-density inter-module signal channels within the same area; therefore, the lines in the second line areas 313 and 323 can have relatively larger line widths, line spacing, or pad arrangement spacing.

[0080] In this embodiment, the line density of the first line regions 312 and 322 is greater than that of the second line regions 313 and 323. In other words, the first line regions 312 and 322 are used to support the high-density interconnection requirements between modules, while the second line regions 313 and 323 are used to support the relatively low-density connection requirements between the fan-out module and the substrate 340. By dividing the same fan-out module into dense and sparse line regions, the high-density interconnection path corresponding to the bridging chip 330 and the relatively low-density connection path corresponding to the substrate 340 can be structurally partitioned.

[0081] Based on the above structure, since the bridging chip 330 is connected to the first line areas 312 and 322, which are densely lined areas, the bridging chip 330 can be used to undertake the high-density signal transmission task between the first fan-out module 310 and the second fan-out module 320. Meanwhile, since the substrate 340 is connected to the second line areas 313 and 323, which are sparsely lined areas, the substrate 340 can be electrically connected to the first fan-out module 310 and the second fan-out module 320 through relatively low-density connection areas.

[0082] The above structure can solve the technical problems of high wiring complexity, inconsistent alignment requirements, and difficulty in ensuring joint reliability when different interconnection needs are mixed in the same connection area. Specifically, high-density interconnection between modules requires high line density and has high requirements for connection position and signal path; the connection between fan-out modules and substrate 340 can usually use a connection area with relatively low line density. By setting the first line areas 312 and 322 as line-dense areas and the second line areas 313 and 323 as line-sparse areas, high-density interconnection and substrate connection can be handled by different line areas, thereby reducing the wiring pressure of simultaneously meeting the needs of high-density interconnection and substrate connection in the same area.

[0083] Furthermore, since the line density of the first line areas 312 and 322 is greater than that of the second line areas 313 and 323, the bridging chip 330 can be centrally connected to the line-dense area suitable for high-density interconnection, while the substrate 340 can be connected to the line-sparse area suitable for substrate connection. In this way, different line areas can be wired and connected according to their respective connection requirements, which helps to reduce the wiring length and signal transmission loss of the high-density interconnection path between modules, and reduces the requirements of the substrate connection area for high-density wiring capabilities.

[0084] Therefore, by defining the first line areas 312 and 322 as dense line areas and the second line areas 313 and 323 as sparse line areas, and making the line density of the first line areas 312 and 322 greater than that of the second line areas 313 and 323, this embodiment can meet the high-density interconnection requirements between modules while avoiding designing all connections as high-density connection areas. This helps to reduce the difficulty of wiring design, reduce manufacturing costs, and improve the bonding reliability of different connection areas in the packaging structure.

[0085] In some embodiments, the first fan-out module 310 and the second fan-out module 320 are disposed adjacent to each other, and the bridging chip 330 is disposed across the first fan-out module 310 and the second fan-out module 320. Here, "distributed across" can be understood as the bridging chip 330 at least partially covering the adjacent area between the first fan-out module 310 and the second fan-out module 320 in the planar direction of the package structure 300A, and a portion of the bridging chip 330 corresponds to the first line area 312 of the first fan-out module 310, and another portion of the bridging chip 330 corresponds to the first line area 322 of the second fan-out module 320.

[0086] Specifically, the bridging chip 330 is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320, respectively. Thus, signals in the first fan-out module 310 can be transmitted to the bridging chip 330 via the first line area 312, and further transmitted to the first line area 322 of the second fan-out module 320 via the bridging chip 330. Correspondingly, signals in the second fan-out module 320 can also be transmitted to the first fan-out module 310 via the first line area 322, the bridging chip 330, and the first line area 312.

[0087] In this embodiment, since the bridging chip 330 is disposed between two adjacent fan-out modules, it can serve as a local bridging channel between adjacent fan-out modules, so that the signal between the two adjacent fan-out modules does not have to rely entirely on the lines in the substrate 340 for transmission. That is to say, at least part of the inter-module signal between the first fan-out module 310 and the second fan-out module 320 can be transmitted through the bridging chip 330, while the substrate 340 can mainly undertake the connection function between the fan-out modules and external structures.

[0088] The above structure solves the technical problems of high-density signals between adjacent fan-out modules, which result in high substrate wiring complexity, long signal paths, and excessive substrate wiring resources due to transmission of high-density signals entirely through the substrate. Specifically, after the bridging chip 330 is installed between two adjacent fan-out modules, it can form a more direct signal transmission path between the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320, thereby reducing the need for high-density signals between modules to detour to the substrate 340 and then return to the other fan-out module.

[0089] Furthermore, since the bridging chip 330 connects the first line areas 312 and 322 of two adjacent fan-out modules respectively, and the first line areas 312 and 322 are used to realize high-density interconnection between modules, the bridging chip 330 can centrally undertake the high-density signal transmission between adjacent fan-out modules. In this way, the high-density interconnection function between modules can be centralized in the bridging chip 330 and its corresponding first line areas 312 and 322, without the need to arrange a large number of fine lines for high-speed or high-density communication between modules in the substrate 340, thereby reducing the wiring difficulty of the substrate 340.

[0090] Meanwhile, since the bridging chip 330 spans and connects the first line areas 312 and 322 of two adjacent fan-out modules, the relative positional relationship between the bridging chip 330 and the adjacent fan-out modules is more direct. Compared to the method of pre-setting the bridging structure on the substrate side and then aligning it with multiple fan-out modules, in this embodiment, the bridging chip 330 mainly establishes a connection relationship with the first line areas 312 and 322 of the adjacent fan-out modules. Therefore, the impact of thermal expansion, warpage, or process deformation of the substrate 340 on the positional relationship of the high-density interconnection between modules can be reduced.

[0091] Therefore, by placing the bridging chip 330 across two adjacent fan-out modules and electrically connecting it to the first line areas 312 and 322 of the two adjacent fan-out modules respectively, a shorter and more concentrated high-density signal transmission path can be formed between adjacent fan-out modules. This helps to reduce the substrate wiring pressure, reduce the length of the signal transmission path between modules, and improve the reliability of the high-density interconnection between adjacent fan-out modules.

[0092] In some embodiments, the plurality of first connection structures 350 include micro bumps, and the plurality of second connection structures 360 include at least one of C4 bumps, copper pillars, and solder bumps.

[0093] Specifically, the first connection structure 350 is disposed between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, and is used to realize the electrical connection between the bridging chip 330 and the first line areas 312 and 322. Since the first line areas 312 and 322 are used to realize high-density interconnection between modules, the first connection structure 350 can adopt microbumps. Microbumps have relatively small size and spacing, which are suitable for providing a large number of connection points in a limited area, thereby meeting the high-density signal transmission requirements between the bridging chip 330 and the first line areas 312 and 322.

[0094] The second connection structure 360 ​​is disposed between the substrate 340 and the first fan-out module 310 and the second fan-out module 320, and is used to realize the electrical connection between the substrate 340 and the second line areas 313 and 323. Since the second line areas 313 and 323 are used to realize the connection between the fan-out modules and the substrate 340, their connection density requirement can be lower than that of the high-density interconnection area corresponding to the bridge chip 330. Therefore, the second connection structure 360 ​​can adopt at least one of C4 bumps, copper pillars, and solder bumps. Compared with microbumps, C4 bumps, copper pillars, or solder bumps usually have larger connection dimensions and larger arrangement spacing, which are suitable for realizing the electrical connection, mechanical connection, and support between the fan-out modules and the substrate 340.

[0095] With the above configuration, the high-density interconnect area corresponding to the bridging chip 330 uses microbumps, while the relatively low-density connection area corresponding to the substrate 340 uses C4 bumps, copper pillars, or solder bumps. This allows the first connection structure 350 and the second connection structure 360 ​​to adapt to different connection requirements. In other words, the first connection structure 350 is mainly used to meet the high-density signal transmission requirements between the bridging chip 330 and the fan-out module, while the second connection structure 360 ​​is mainly used to meet the electrical connection and structural support requirements between the fan-out module and the substrate 340.

[0096] The above structure can solve the problem of different requirements for connection structure size, spacing, and bonding tolerance in the interconnection and substrate connection between high-density modules in the same package structure. Specifically, if a large-sized connection structure is used between the bridge chip 330 and the first line areas 312 and 322, it will be difficult to provide a sufficient number of high-density signal connection points in a limited area; if an excessively small-sized connection structure is used between the substrate 340 and the second line areas 313 and 323, it will increase the difficulty of large-area bonding between the substrate 340 and the fan-out module and reduce the process tolerance. Therefore, this embodiment uses microbumps and C4 bumps, copper pillars, or solder bumps respectively, so that different connection areas can adopt connection structures that match their functions.

[0097] Furthermore, since microbumps are used for the connection between the bridging chip 330 and the first line areas 312 and 322, while C4 bumps, copper pillars, or solder bumps are used for the connection between the substrate 340 and the second line areas 313 and 323, high-density connections and substrate connections are structurally distributed into different types of connection structures. In this way, on the one hand, the small size and small spacing of the microbumps can be used to achieve high-density signal transmission between the bridging chip 330 and the fan-out module; on the other hand, the larger size and higher mechanical support capacity of the C4 bumps, copper pillars, or solder bumps can be used to improve the structural stability of the connection between the substrate 340 and the fan-out module.

[0098] Therefore, by including microbumps in the first connection structure 350 and at least one of C4 bumps, copper pillars, and solder bumps in the second connection structure 360, this embodiment can simultaneously meet the requirements of high-density interconnection between modules and the reliability requirements of substrate connection in the same package structure 300A. This is beneficial to improving the signal transmission density between the bridge chip 330 and the fan-out module, and improving the bonding stability and process adaptability between the substrate 340 and the fan-out module.

[0099] In some embodiments, the spacing between the plurality of first connection structures 350 is less than 50 μm, and the spacing between the plurality of second connection structures 360 is greater than 100 μm.

[0100] Specifically, the first connection structure 350 is disposed between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, and is used to realize high-density electrical connections between the bridging chip 330 and the first line areas 312 and 322. Since the first line areas 312 and 322 are used to realize high-density interconnection between modules, the first connection structure 350 needs to provide a large number of connection points within a limited arrangement area. By setting the spacing of the first connection structure 350 to less than 50 μm, the number of connection points per unit area can be increased, thereby meeting the high-density signal transmission requirements between the bridging chip 330 and the first line areas 312 and 322.

[0101] The second connection structure 360 ​​is disposed between the substrate 340 and the first fan-out module 310 and the second fan-out module 320, and is used to realize the electrical connection between the substrate 340 and the second circuit areas 313 and 323. Since the second circuit areas 313 and 323 are used for relatively low-density connections between the fan-out modules and the substrate 340, the second connection structure 360 ​​does not need to achieve the same connection density as the first connection structure 350. By setting the arrangement spacing of the second connection structure 360 ​​to be greater than 100μm, the second connection structure 360 ​​can have a relatively large connection size and arrangement interval, thereby improving its alignment tolerance and mechanical support capability.

[0102] In this embodiment, the spacing between the first connection structure 350 and the second connection structure 360 ​​is less than 50 μm, while the spacing between them is greater than 100 μm. This results in a significantly different connection density between the high-density interconnect region corresponding to the bridging chip 330 and the substrate connection region corresponding to the substrate 340. Consequently, the first connection structure 350 can meet the small-pitch, high-density signal transmission requirements between the bridging chip 330 and the fan-out module, while the second connection structure 360 ​​can meet the large-pitch connection requirements between the fan-out module and the substrate 340.

[0103] The above structure can solve the problem of different spacing requirements for high-density module interconnection and substrate connection in the same package structure. Specifically, if the spacing of the first connection structure 350 is too large, it will be difficult to form a sufficient number of high-density signal channels between the bridge chip 330 and the first line areas 312 and 322 within a limited area; if the spacing of the second connection structure 360 ​​is too small, the large-area bonding between the substrate 340 and the fan-out module will place higher demands on the overall alignment accuracy and may reduce the process tolerance of the substrate connection area. Therefore, limiting the spacing of the first connection structure 350 to less than 50 μm and the spacing of the second connection structure 360 ​​to greater than 100 μm allows the two types of connection structures to meet their respective connection function requirements.

[0104] Furthermore, since the small-pitch connection area of ​​the first connection structure 350 is mainly used for high-density interconnection between the bridging chip 330 and the fan-out module, while the large-pitch connection area of ​​the second connection structure 360 ​​is mainly used for connection between the substrate 340 and the fan-out module, the two types of connection structures can be treated differently in terms of structure and process. This avoids the manufacturing difficulties and alignment pressure caused by using a small-pitch design for all connection areas, and also avoids the high-density interconnection area failing to meet signal transmission density requirements due to excessively large connection pitch.

[0105] Therefore, by setting the arrangement spacing of the multiple first connection structures 350 to less than 50μm and the arrangement spacing of the multiple second connection structures 360 to greater than 100μm, this embodiment can improve the alignment tolerance and mechanical stability of the connection structure between the substrate 340 and the fan-out module while meeting the high-density signal transmission requirements between the bridge chip 330 and the fan-out module. This is beneficial for balancing the signal transmission density, process manufacturability and bonding reliability of the package structure 300A.

[0106] In some embodiments, the package structure 300A further includes a first filling layer 370, which fills at least between the bridge chip 330 and the first fan-out module 310 and the second fan-out module 320.

[0107] Specifically, the bridging chip 330 is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 via the first connection structure 350. Since the bridging chip 330 is spaced from the first fan-out module 310 and the second fan-out module 320 via the first connection structure 350, a gap is formed between the bridging chip 330 and these modules. The first filling layer 370 can fill this gap and at least cover a portion of the first connection structure 350.

[0108] In some implementations, the bridging chip 330 may include a connection surface 332 facing at least two fan-out modules and a back surface 333 away from the connection surface 332, and the first filler layer 370 may be located between the connection surface 332 of the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320.

[0109] The first filler layer 370 can flow and solidify from the edge region of the bridging chip 330 to the gap below the bridging chip 330, thereby filling at least a portion of the space between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320. The first filler layer 370 can be used to support the bridging chip 330 and to cover or protect the first connection structure 350.

[0110] By providing a first filler layer 370, the technical problem that the first connection structure 350 is easily damaged by local stress, subsequent assembly pressure, or thermal cycling stress after the bridging chip 330 is connected to the fan-out module via the first connection structure 350 can be solved. Specifically, the first connection structure 350 is used to achieve high-density interconnection between the bridging chip 330 and the first circuit areas 312 and 322. Its arrangement spacing is small, and the size of each connection structure is also relatively small, making it more sensitive to mechanical and thermal stress. If the gap between the bridging chip 330 and the fan-out module remains empty, the first connection structure 350 needs to withstand more mechanical loads from the bridging chip 330, the fan-out module, and subsequent substrate assembly processes, which can easily lead to connection fatigue, cracks, or electrical connection failures.

[0111] After the first filler layer 370 is filled between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, it can form a support medium between the bridging chip 330 and the fan-out modules. Therefore, some of the mechanical load acting on the bridging chip 330 or the first connection structure 350 can be transferred or dispersed to the surrounding area through the first filler layer 370, instead of being mainly concentrated on the first connection structure 350. Since the first filler layer 370 can disperse stress and limit the relative displacement between the bridging chip 330 and the fan-out modules, the risk of cracking or abnormal contact of the first connection structure 350 due to localized stress concentration can be reduced.

[0112] Furthermore, since the first filler layer 370 covers at least a portion of the first connection structure 350, it also protects the first connection structure 350. Specifically, during subsequent substrate 340 assembly, package structure 300A handling, temperature changes, or reliability testing, thermal expansion differences or slight relative displacements may occur between the bridge chip 330 and the first fan-out module 310 and the second fan-out module 320. The first filler layer 370, filling the space between them, can limit the magnitude of this relative displacement and buffer stress transmission caused by differences in thermal expansion coefficients, thereby improving the reliability of the high-density connection between the bridge chip 330 and the first line areas 312 and 322.

[0113] Therefore, by providing a first filler layer 370 between the bridging chip 330 and at least two fan-out modules, this embodiment can support and protect the first connection structure 350, reduce stress concentration in the high-density connection area between the bridging chip 330 and the fan-out modules, reduce the risk of cracks, breaks or poor contact in the first connection structure 350, thereby improving the bonding reliability between the bridging chip 330 and the fan-out modules and the overall reliability of the package structure 300A.

[0114] In some embodiments, the first filler layer 370 includes at least one of underfill material, molding compound, and adhesive film. The first fan-out module 310 and the second fan-out module 320 are arranged side-by-side, with a module gap G between them. In addition to filling at least the space between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, the first filler layer 370 may also be further disposed within the module gap G between the first fan-out module 310 and the second fan-out module 320.

[0115] Specifically, the bridging chip 330 is disposed between the first fan-out module 310 and the second fan-out module 320, and is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 respectively through the first connection structure 350. Since the first fan-out module 310 and the second fan-out module 320 are arranged side by side, a module gap G is formed between them. The first filling layer 370 can enter from the edge area of ​​the bridging chip 330, the area around the first connection structure 350, or the module gap G between adjacent fan-out modules, and fill at least a portion of the space below the bridging chip 330 and at least a portion of the space in the module gap G.

[0116] In some embodiments, the first filler layer 370 may be an underfill. The underfill has good flowability and can enter the gap between the bridging chip 330 and the fan-out module under capillary action or dispensing pressure, and further enter the module gap G between the first fan-out module 310 and the second fan-out module 320, thereby filling and protecting the gap between the first connection structure 350 and adjacent modules.

[0117] In other embodiments, the first filler layer 370 may include a molding compound. The molding compound may form an overall or partial covering structure between the bridging chip 330 and the fan-out module, as well as between adjacent fan-out modules, to improve the structural bonding strength between the bridging chip 330, the first fan-out module 310, and the second fan-out module 320.

[0118] In some other embodiments, the first filler layer 370 may include an adhesive film. The adhesive film may be disposed between the bridging chip 330 and the fan-out module, or at least partially extend into the module gap G between adjacent fan-out modules, to form an adhesive, support, or buffering effect between the bridging chip 330 and the fan-out module.

[0119] By further setting the first filling layer 370 within the module gap G between two adjacent fan-out modules, the technical problems of insufficient local support in the spanning area of ​​the bridging chip 330, large relative displacement between adjacent modules, and stress concentration in the first connection structure 350 below the bridging chip 330 when there is a gap between adjacent fan-out modules can be solved.

[0120] Specifically, when the bridging chip 330 spans between two adjacent fan-out modules, a portion of the bridging chip 330 corresponds to the first fan-out module 310, and another portion corresponds to the second fan-out module 320. The middle region of the bridging chip 330 may correspond to the module gap G between the first fan-out module 310 and the second fan-out module 320. If no filling material is provided in the module gap G, the area of ​​the bridging chip 330 spanning the module gap G lacks effective support. During subsequent substrate assembly, package structure handling, thermal cycling, or reliability testing, relative displacement or local bending may occur between the bridging chip 330 and the two adjacent fan-out modules, causing the first connection structure 350 to be subjected to significant local stress.

[0121] After the first filling layer 370 fills the gap G between modules, it forms a support medium between two adjacent fan-out modules and together with the filling portion below the bridging chip 330, constitutes a continuous or substantially continuous support structure. Thus, the load on the bridging chip 330 can be distributed to the first fan-out module 310 and the second fan-out module 320 through the first filling layer 370, reducing the risk of load concentration on the first connection structure 350.

[0122] Furthermore, since the first filler layer 370 is at least partially disposed within the module gap G, it can also limit the relative displacement between the first fan-out module 310 and the second fan-out module 320. Thus, when the first fan-out module 310 and the second fan-out module 320 undergo minor deformation due to temperature changes or mechanical loads, the first filler layer 370 can provide buffering and constraint between adjacent fan-out modules, thereby reducing the stress difference between the connection areas at both ends of the bridging chip 330.

[0123] Therefore, by including at least one of underfill, molding material, and adhesive film in the first filling layer 370, and further disposing the first filling layer 370 within the module gap G between two adjacent fan-out modules, a support, protection, and stress buffer structure can be formed below the bridging chip 330 and between adjacent fan-out modules. This reduces local stress concentration in the area spanned by the bridging chip 330, decreases the risk of cracks, breaks, or poor contact in the first connection structure 350, and improves the reliability of the high-density interconnect structure between adjacent fan-out modules.

[0124] In some embodiments, the package structure 300A may further include a second filler layer 380. The second filler layer 380 is disposed between the substrate 340 and the first fan-out module 310 and the second fan-out module 320, and at least partially covers the bridge chip 330.

[0125] In some embodiments, the second filler layer 380 may include at least one of the following: underfill, molding material, adhesive, resin, epoxy resin, and dielectric filler. For example, the second filler layer 380 may be an underfill layer disposed between the substrate 340 and the first fan-out module 310 and the second fan-out module 320 to fill the gap around the second connection structure 360 ​​and buffer thermal stress. As another example, the second filler layer 380 may be a molding material layer to at least partially cover the bridging chip 330 and enhance the overall structural strength between the substrate 340 and the fan-out module. Yet another example is that the second filler layer 380 may be an adhesive material layer or a resin material layer to provide adhesion, support, and stress buffering between the substrate 340 and the fan-out module. It should be noted that the material type of the second filler layer 380 is not limited to the above examples, as long as it can fill the gap between the substrate 340 and the fan-out module and provide support, protection, or stress buffering for the bridging chip 330 and / or the second connection structure 360.

[0126] Specifically, the bridging chip 330 is disposed on one side of the first fan-out module 310 and the second fan-out module 320, and is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 respectively through the first connection structure 350. The substrate 340 is disposed on the same side of the first fan-out module 310 and the second fan-out module 320, and is electrically connected to the second line area 313 of the first fan-out module 310 and the second line area 323 of the second fan-out module 320 respectively through the second connection structure 360. Since the bridging chip 330 is located in the space between the substrate 340 and the first fan-out module 310 and the second fan-out module 320, a gap is formed between the substrate 340 and the first fan-out module 310 and the second fan-out module 320, allowing filling material to enter.

[0127] The second filling layer 380 fills at least a portion of the gap between the substrate 340 and the first fan-out module 310 and the second fan-out module 320, and the second filling layer 380 at least partially covers the bridging chip 330. Here, "at least partially covers the bridging chip 330" can be understood as the second filling layer 380 covering at least one surface, at least one side, or at least a portion of the peripheral area of ​​the bridging chip 330, so that the bridging chip 330 is partially covered or supported by the second filling layer 380. The second filling layer 380 may be located between the bridging chip 330 and the substrate 340, and / or located in the peripheral area of ​​the bridging chip 330.

[0128] By providing the second filling layer 380, a spaced relationship can be maintained between the bridging chip 330 and the substrate 340. In other words, although the bridging chip 330 is located between the substrate 340 and the fan-out module, it does not need to be directly attached to or fixed to the substrate 340. After the gap between the substrate 340 and the fan-out module is filled by the second filling layer 380, the bridging chip 330 can be covered, supported, or isolated by the second filling layer 380.

[0129] The above structure solves the technical problem that when the bridging chip 330 is disposed between the substrate 340 and the fan-out module, the bridging chip 330 is easily subjected to direct traction or compression due to thermal expansion, warping, or mechanical deformation of the substrate 340. Specifically, if the bridging chip 330 is directly attached to the substrate 340 or rigidly connected to the substrate 340, the thermal expansion, contraction, or warping generated by the substrate 340 during subsequent bonding, cooling, or thermal cycling can easily be directly transmitted to the bridging chip 330, resulting in additional stress or misalignment in the first connection structure 350 between the bridging chip 330 and the fan-out module. After the second filling layer 380 is disposed between the substrate 340 and the fan-out module and at least partially covers the bridging chip 330, it can form a buffer and isolation between the bridging chip 330 and the substrate 340, making it less likely that the deformation of the substrate 340 will directly affect the bridging chip 330.

[0130] Furthermore, the second filler layer 380 at least partially covers the bridging chip 330, forming a support structure around the bridging chip 330. Thus, after the substrate 340 and the fan-out module are assembled, the bridging chip 330 no longer primarily relies on the first connection structure 350 to bear external loads; instead, the second filler layer 380 can distribute some of the mechanical loads to the peripheral areas of the substrate 340 and / or the fan-out module. This reduces the localized stress on the first connection structure 350 between the bridging chip 330 and the first line areas 312 and 322.

[0131] Furthermore, the second filler layer 380, disposed between the substrate 340 and the first fan-out module 310 and the second fan-out module 320, also serves to cover, protect, and buffer the second connection structure 360. Since the second connection structure 360 ​​is used to achieve electrical and mechanical connections between the substrate 340 and the fan-out modules, the second filler layer 380 filling this area reduces the risk of cracking, fatigue, or abnormal contact in the second connection structure 360 ​​under temperature changes or mechanical loads.

[0132] Therefore, by providing a second filler layer 380 between the substrate 340 and at least two fan-out modules, and ensuring that the second filler layer 380 at least partially covers the bridging chip 330, a filling isolation and stress buffer relationship can be formed between the bridging chip 330 and the substrate 340, reducing the impact of thermal expansion or warping of the substrate 340 on the bridging chip 330 and the first connection structure 350. Simultaneously, the second filler layer 380 also enhances the overall structural support between the substrate 340 and the fan-out modules, improving the mechanical and bonding reliability of the package structure 300A.

[0133] In some embodiments, at least one of the at least two fan-out modules includes an input / output die (IOD). For ease of explanation, the following description uses the example of a first fan-out module 310 including a first input / output die 315 and a second fan-out module 320 including a second input / output die 325.

[0134] A first input / output chip 315 is disposed in a first fan-out module 310, and a second input / output chip 325 is disposed in a second fan-out module 320. The first input / output chip 315 and the second input / output chip 325 can respectively implement input / output signal processing, interface connection, inter-chip communication, or external signal transmission in their respective fan-out modules. The first input / output chip 315 can be signal-connected to the bridge chip 330 through the first line area 312 of the first fan-out module 310, and signal-connected to the substrate 340 through the second line area 313 of the first fan-out module 310. The second input / output chip 325 can be signal-connected to the bridge chip 330 through the first line area 322 of the second fan-out module 320, and signal-connected to the substrate 340 through the second line area 323 of the second fan-out module 320.

[0135] Therefore, the first input / output chip 315 and the second input / output chip 325 have different signal transmission paths. For high-density signals between modules, the first input / output chip 315 can transmit signals to the second input / output chip 325 via the first line area 312, the bridge chip 330, and the first line area 322; for signals that need to be transmitted to the substrate 340, the first input / output chip 315 or the second input / output chip 325 can transmit signals to the substrate 340 via the corresponding second line areas 313 and 323.

[0136] With the above configuration, the inter-module communication paths and substrate connection paths of the input / output chips can be implemented through different line areas. Specifically, the first line areas 312 and 322 are used to connect the bridge chip 330 and are suitable for carrying high-density signals between modules; the second line areas 313 and 323 are used to connect the substrate 340 and are suitable for carrying signal, power, or ground connections between the fan-out module and the substrate 340. This avoids concentrating all high-density inter-module communication and substrate connections in the same line area, thereby reducing the wiring pressure in a single area and increasing the design freedom for different signal paths.

[0137] In some embodiments, at least one fan-out module includes an intermediary layer. Taking a first fan-out module 310 as an example, the first fan-out module 310 may include a first intermediary layer 317, which is disposed on the signal transmission path between the first input / output chip 315 and the bridge chip 330. Taking a second fan-out module 320 as an example, the second fan-out module 320 may include a second intermediary layer 327, which is disposed on the signal transmission path between the second input / output chip 325 and the bridge chip 330.

[0138] The first interposer layer 317 can be disposed between the first input / output chip 315 and the first line area 312, or at any suitable location in the signal transmission path from the first input / output chip 315 to the bridge chip 330. The second interposer layer 327 can be disposed between the second input / output chip 325 and the first line area 322, or at any suitable location in the signal transmission path from the second input / output chip 325 to the bridge chip 330. By disposing of the first interposer layer 317 and / or the second interposer layer 327, a transitional interconnect structure can be formed between the input / output chip and the bridge chip 330, thereby enabling the signals from the input / output chip to be guided to the bridge chip 330 via the interposer layer.

[0139] In some embodiments, the intermediary layer may include an intermediary structure. Specifically, the first intermediary layer 317 may include a first intermediary structure 3171, through which the first input / output chip 315 is signal-connected to the bridge chip 330. The second intermediary layer 327 may include a second intermediary structure 3271, through which the second input / output chip 325 is signal-connected to the bridge chip 330.

[0140] The first intermediary structure 3171 and the second intermediary structure 3271 can be used to realize signal redistribution, planar routing, thickness-direction conduction, or line switching within the corresponding fan-out module, respectively. For example, the signal output by the first input / output chip 315 can first be transmitted to the first intermediary structure 3171, then transmitted from the first intermediary structure 3171 to the first line area 312, and further transmitted to the bridge chip 330 via the first connection structure 350. Similarly, the signal output by the second input / output chip 325 can first be transmitted to the second intermediary structure 3271, then transmitted from the second intermediary structure 3271 to the first line area 322, and further transmitted to the bridge chip 330 via the first connection structure 350.

[0141] In some embodiments, the interposer structure includes at least one of a silicon interposer structure, a silicon chip with through-silicon vias (TSVs), and an interconnect die (ICD). Specifically, the first interposer structure 3171 and / or the second interposer structure 3271 can be a silicon interposer layer to achieve high-density signal switching through silicon-based circuitry; it can also be a silicon chip with TSVs to achieve vertical conduction in the thickness direction through the TSVs; or it can be an interconnect die to achieve signal transmission between the input / output chip and the bridge chip 330 through interconnect lines inside the chip. It should be noted that the specific form of the interposer structure is not limited to the above examples, as long as it can be located on the signal transmission path between the input / output chip and the bridge chip 330 and provide signal switching, wiring, or conduction functions.

[0142] In some embodiments, an intermediary structure is used to provide horizontal wiring and vertical interconnection within a fan-out module, and a bridging chip 330 is used to provide horizontal interconnection between two adjacent fan-out modules. Specifically, a first intermediary structure 3171 can implement planar wiring between a first input / output chip 315 and a first line area 312 within a first fan-out module 310, and achieve signal conduction between different height positions through a vertical conduction structure. A second intermediary structure 3271 can implement planar wiring between a second input / output chip 325 and a first line area 322 within a second fan-out module 320, and achieve signal conduction between different height positions through a vertical conduction structure. The bridging chip 330 is bridging or connected between the first fan-out module 310 and the second fan-out module 320, and is used to provide a horizontal interconnection path between the first line area 312 and the first line area 322.

[0143] Through the aforementioned multi-level interconnection structure, signals between the input / output chips and the bridge chip 330 can first undergo local switching, horizontal routing, and vertical interconnection within their respective fan-out modules, and then the bridge chip 330 completes the horizontal interconnection between adjacent fan-out modules. Thus, the intermediate structure primarily undertakes the signal switching and inter-layer conduction functions within the fan-out modules, while the bridge chip 330 primarily undertakes the high-density interconnection function between fan-out modules.

[0144] The above structure can solve the problems of complex signal transmission paths between input / output chips and bridge chip 330, difficulty in balancing vertical conduction and horizontal routing within the fan-out module, and complex routing design caused by the mixture of inter-module interconnection and intra-module interconnection functions. Specifically, input / output chips are usually located in specific chip areas of the fan-out module, while bridge chip 330 is located between adjacent fan-out modules or on one side of the fan-out module. Without an intermediary layer or structure, the signal between the input / output chips and bridge chip 330 may need to rely entirely on the rewiring structure in the fan-out module for long-distance routing, which can easily increase wiring length, line congestion, and signal loss.

[0145] By setting an intermediary layer and structure between the input / output chip and the bridge chip 330, the signals from the input / output chip can be partially transferred and vertically conducted within the fan-out module before being transmitted to the bridge chip 330. Since the intermediary structure can provide horizontal routing and vertical interconnection, it reduces the routing pressure on the rewiring structure within the fan-out module and makes the signal path between the input / output chip and the bridge chip 330 more centralized and controllable.

[0146] Furthermore, since the bridging chip 330 provides horizontal interconnects between two adjacent fan-out modules, and the intermediary structure provides horizontal wiring and vertical interconnects within a single fan-out module, the intra-module interconnects and inter-module interconnects are functionally implemented in a layered manner. This allows for both improvements in the local interconnect capability between the input / output chips and the first line area using the intermediary structure, and improvements in the high-density signal transmission capability between adjacent fan-out modules using the bridging chip 330. Consequently, while increasing the system's scalability, it reduces the wiring pressure and stress concentration risks caused by a single interconnect structure bearing all interconnect functions in a large-area package.

[0147] Therefore, this embodiment separates the high-density communication path between input / output chips and the substrate connection path by setting input / output chips, an interposer layer, and an interposer structure in at least one fan-out module, and by having the input / output chips signal-connected to the bridge chip 330 through a first line area and to the substrate 340 through a second line area. Furthermore, by having the interposer structure provide horizontal wiring and vertical interconnects within the fan-out module, and the bridge chip 330 provide horizontal interconnects between adjacent fan-out modules, a multi-level interconnect architecture can be formed that combines intra-module interconnects with inter-module interconnects. This helps reduce wiring complexity, shorten signal transmission paths, improve the reliability of high-density interconnects, and enhance the scalability of large-size package structures.

[0148] refer to Figure 3B , Figure 3B This is a cross-sectional view of the packaging structure 300B according to an embodiment of the present application, obtained along a first vertical section.

[0149] In some embodiments, such as Figure 3B As shown, the packaging structure 300B of this application is similar to... Figure 3A The packaging structure shown is similar to that of 300A. The same or corresponding structures can be referred to the description of the foregoing embodiments, and will not be repeated here. Figure 3B The illustrated embodiments and Figure 3A The main difference in the illustrated embodiment is that the substrate 340 has a recess 344, and the bridging chip 330 is at least partially accommodated within the recess 344.

[0150] Specifically, the groove 344 can be disposed on the side of the substrate 340 facing the first fan-out module 310 and the second fan-out module 320. The position of the groove 344 can correspond to the position of the bridging chip 330, such that after the substrate 340 is disposed on the side of the first fan-out module 310 and the second fan-out module 320, at least a portion of the bridging chip 330 can extend into or be accommodated within the groove 344. Here, "at least partially accommodated within the groove 344" can be understood as the side of the bridging chip 330 facing away from the first fan-out module 310 and the second fan-out module 320, a portion of the bridging chip 330 in the thickness direction, or a local area of ​​the bridging chip 330 being located within the space defined by the groove 344.

[0151] exist Figure 3BIn the illustrated embodiment, the bridging chip 330 remains fixed to the first fan-out module 310 and the second fan-out module 320, and is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 respectively via the first connection structure 350. The substrate 340 is still electrically connected to the second line area 313 of the first fan-out module 310 and the second line area 323 of the second fan-out module 320 respectively via the second connection structure 360. That is to say, Figure 3B The embodiment shown still retains the structural relationship in which the bridging chip 330 is disposed on the fan-out module side and the bridging chip 330 is separately disposed from the substrate 340.

[0152] By providing a recess 344 in the substrate 340 and at least partially accommodating the bridging chip 330 within the recess 344, the technical problem of the bridging chip 330 easily increasing the local stacking height and potentially causing spatial interference with the substrate 340 when disposed between the substrate 340 and the fan-out module can be solved. Specifically, in Figure 3A In the structure shown, a certain height space needs to be reserved between the substrate 340 and the fan-out module to accommodate the bridging chip 330. If the substrate 340 is a planar structure, the vertical spacing between the substrate 340 and the fan-out module needs to be at least large enough to accommodate the bridging chip 330 and its related connection structures, which may result in a local increase in the thickness of the package structure 300A.

[0153] And in Figure 3B In the illustrated embodiment, the recess 344 provides a localized space for accommodating the bridging chip 330. After the substrate 340 is assembled with the first fan-out module 310 and the second fan-out module 320, the bridging chip 330 can at least partially enter the recess 344. Thus, the space occupied by the bridging chip 330 in the thickness direction can be partially absorbed or compensated by the recess 344, thereby reducing the vertical gap required between the substrate 340 and the fan-out modules to accommodate the bridging chip 330.

[0154] Furthermore, since the bridging chip 330 is at least partially accommodated within the recess 344, the overall stacking height between the substrate 340 and the fan-out module can be reduced, or a larger accommodating margin can be provided for the bridging chip 330 and its surrounding structures at the same package height. This reduces the risk of mechanical interference between the bridging chip 330 and the substrate 340 and improves the structural compatibility of the substrate 340 and the fan-out module during assembly.

[0155] Therefore, by providing a recess 344 in the substrate 340 and at least partially accommodating the bridging chip 330 within the recess 344, this embodiment can reduce the local stacking height of the package structure 300B, reduce the risk of spatial interference between the bridging chip 330 and the substrate 340, and improve the layout flexibility of the package structure 300B in the thickness direction, while retaining the structural advantage that the bridging chip 330 is pre-set on the fan-out module side.

[0156] In some embodiments, the depth of the recess 344 in the package structure 300B can be 50 μm to 80 μm, and / or the thickness of the bridging chip 330 can be 40 μm to 60 μm.

[0157] Specifically, the depth of the groove 344 can be understood as the dimension of the recess inward from the side surface of the substrate 340 facing the first fan-out module 310 and the second fan-out module 320 along the thickness direction of the substrate 340. The thickness of the bridging chip 330 can be understood as the dimension of the bridging chip 330 along the thickness direction of the package structure 300B.

[0158] In some embodiments, the depth of the groove 344 can be 50 μm, 60 μm, 70 μm, 80 μm, or any value between 50 μm and 80 μm. The thickness of the bridging chip 330 can be 40 μm, 50 μm, 60 μm, or any value between 40 μm and 60 μm. Thus, after the substrate 340 is assembled with the first fan-out module 310 and the second fan-out module 320, at least a portion of the bridging chip 330 can enter the groove 344.

[0159] By setting the depth of the recess 344 to 50 μm to 80 μm, the recess 344 can have sufficient accommodating depth to accommodate at least a portion of the bridge chip 330 in the thickness direction. By setting the thickness of the bridge chip 330 to 40 μm to 60 μm, the bridge chip 330 can be more easily accommodated by the recess 344 while ensuring the necessary structural strength and interconnection function. In this way, the vertical space occupied by the bridge chip 330 between the substrate 340 and the fan-out module can be at least partially offset by the recess 344, thereby reducing the local stacking height of the package structure 300B.

[0160] The aforementioned dimensional matching can solve the problems that the bridge chip 330 cannot be effectively accommodated when the recess 344 is too shallow, and that the structural strength of the substrate 340 may be weakened or the substrate processing difficulty may be increased when the recess 344 is too deep. Specifically, if the depth of the recess 344 is too small, the portion of the bridge chip 330 entering the recess 344 will be less, and a large vertical gap still needs to be reserved between the substrate 340 and the fan-out module, so the effect of reducing the thickness is limited; if the depth of the recess 344 is too large, it may reduce the effective thickness of the substrate 340 below or around the recess 344, affecting the mechanical strength of the substrate 340 and the circuit layout space.

[0161] Meanwhile, if the bridging chip 330 is too thick, even with the recess 344, the bridging chip 330 may still protrude significantly beyond the recess 344, thus increasing the required spacing between the substrate 340 and the fan-out module. If the bridging chip 330 is too thin, it may reduce the mechanical strength of the bridging chip 330 during handling, mounting, filling, or thermal cycling. Therefore, limiting the depth of the recess 344 and the thickness of the bridging chip 330 within the aforementioned ranges allows for a better balance between package thickness, structural strength, fabrication feasibility, and assembly allowance.

[0162] Therefore, by making the depth of the groove 344 50μm to 80μm and / or the thickness of the bridging chip 330 40μm to 60μm, this embodiment can make the bridging chip 330 more effectively at least partially accommodated in the groove 344, thereby reducing the local stacking height of the package structure 300B, reducing the spatial interference between the bridging chip 330 and the substrate 340, and improving the structural adaptability of the substrate 340 when assembling with the fan-out module.

[0163] In some embodiments, Figure 3B Based on the embodiment shown, a filler material or a molding material is provided between the bridging chip 330 and the inner wall 345 of the groove 344.

[0164] Specifically, the recess 344 may include an inner wall 345. The inner wall 345 may include the bottom wall and / or sidewalls of the recess 344. When the bridging chip 330 is at least partially accommodated within the recess 344, a gap may be formed between the bridging chip 330 and the inner wall 345. Underfill material or molding compound may be filled within this gap and located between the bridging chip 330 and the inner wall 345.

[0165] In some embodiments, the underfill material may flow along the periphery of the bridging chip 330 or into the opening area between the bridging chip 330 and the inner wall 345 of the recess, and form a filling support structure after curing. In other embodiments, the molding compound may at least partially fill the recess 344 and cover at least a portion of the bridging chip 330 located within the recess 344. The underfill material or the molding compound may be used alone or in combination.

[0166] By providing a filler material or a molding material between the bridging chip 330 and the inner wall 345 of the groove, the problems of insufficient local support, stress concentration, or susceptibility of the bridging chip 330 to mechanical impact can be solved by providing a filler material or molding material between the bridging chip 330 and the inner wall 345 of the groove after the bridging chip 330 is at least partially housed in the groove 344.

[0167] Specifically, after the bridging chip 330 enters the recess 344, if the gap between the bridging chip 330 and the inner wall 345 of the recess is not filled, the bridging chip 330 may experience slight displacement or vibration relative to the substrate 340 when the package structure 300B is subjected to mechanical loads, temperature changes, or reliability testing, and this will subject the connection structure between the bridging chip 330 and the fan-out module to additional stress. Filling this gap with underfill material or molding compound can form a support and buffer medium between the bridging chip 330 and the inner wall 345 of the recess, thereby limiting the relative displacement of the bridging chip 330 and dispersing the mechanical stress acting on the bridging chip 330.

[0168] Furthermore, the underfill material or molding compound disposed between the bridging chip 330 and the inner wall 345 of the groove can reduce local stress concentration caused by the difference in thermal expansion coefficients between the bridging chip 330 and the substrate 340. Specifically, the substrate 340 and the bridging chip 330 may have different amounts of thermal deformation when the temperature changes. After the underfill material or molding compound is placed between them, it can act as a stress buffer layer, reducing the direct effect of the thermal deformation of the substrate 340 on the bridging chip 330, thereby reducing the risk of cracking, chipping, or connection failure of the bridging chip 330.

[0169] Furthermore, the underfill material or molding compound can also fix and protect the bridging chip 330 within the recess 344, making its position within the recess 344 more stable. This improves the reliability of the high-density interconnect structure between the bridging chip 330 and the fan-out module during subsequent packaging, cutting, testing, or use.

[0170] Therefore, by providing a filler material or molding material between the bridging chip 330 and the inner wall 345 of the groove 344, this embodiment can fill the gap between the bridging chip 330 and the groove 344, providing support, fixation and stress buffering for the bridging chip 330, thereby reducing local stress concentration and relative displacement of the bridging chip 330 in the groove 344, and improving the mechanical reliability and bonding reliability of the package structure 300B.

[0171] refer to Figure 3C , Figure 3C This is a cross-sectional schematic diagram of the packaging structure 300C according to an embodiment of this application, obtained along a first vertical section.

[0172] In some embodiments, such as Figure 3C As shown, the packaging structure 300C of this application is similar to... Figure 3B The packaging structure shown is similar to that of 300B. The same or corresponding structures can be referred to the description of the foregoing embodiments, and will not be repeated here. Figure 3C The illustrated embodiments and Figure 3B The main difference in the embodiment shown is that the bridging chip 330 includes a connection surface 332 and a back surface 333, and the back surface 333 of the bridging chip 330 is provided with a back protective film 336.

[0173] Specifically, the connection surface 332 is disposed facing the first fan-out module 310 and the second fan-out module 320, and is used for electrical connection with the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 through the first connection structure 350. The back surface 333 is disposed away from the connection surface 332 and faces the groove 344 of the substrate 340. A back protective film 336 is disposed on the back surface 333 of the bridging chip 330. That is, when the bridging chip 330 is at least partially accommodated in the groove 344, the back protective film 336 is located between the back surface 333 of the bridging chip 330 and the inner wall 345 of the groove 344.

[0174] In some embodiments, the back protective film 336 may be an adhesive protective film. The adhesive back protective film 336 may, after the bridging chip 330 enters the recess 344, be at least partially attached to the inner wall 345 of the recess 344, or at least partially attached to the opposing surface within the recess 344. Thus, the back protective film 336 can form an adhesive, buffering, or isolation structure between the back surface 333 of the bridging chip 330 and the inner wall 345 of the recess 344.

[0175] By providing a back protective film 336 on the back side 333 of the bridging chip 330, the technical problem that the back side 333 of the bridging chip 330 is easily damaged by the inner wall of the recess 344, the filling material, assembly pressure, or thermal stress when the bridging chip 330 is at least partially housed within the recess 344 can be solved. Specifically, the bridging chip 330 typically includes a silicon substrate or silicon material portion. When the back side 333 of the bridging chip 330 is close to the inner wall 345 of the recess 344, if there is no protective structure between them, local stress concentration may occur on the back side 333 of the bridging chip 330 during the assembly of the substrate 340 with the fan-out module, the filling of the underfill or molding material, the material curing, and subsequent thermal cycling, which may lead to the risk of cracks, chipping, or breakage.

[0176] After the back protective film 336 is disposed on the back surface 333 of the bridging chip 330, a protective medium can be formed between the back surface 333 of the bridging chip 330 and the inner wall 345 of the groove 344. Therefore, the mechanical load exerted on the back surface 333 of the bridging chip 330 by the inner wall 345 of the groove 344 or the filling material can first be applied to the back protective film 336, and then dispersed or buffered by the back protective film 336 before being transferred to the bridging chip 330, thereby reducing local stress concentration on the back surface 333 of the bridging chip 330.

[0177] Furthermore, when the back protective film 336 is an adhesive protective film, it can provide a certain positioning and bonding effect between the bridging chip 330 and the inner wall 345 of the groove 344. This prevents the bridging chip 330 from shifting position during subsequent filling with underfill or molding material, and ensures that the gap between the back surface 333 of the bridging chip 330 and the inner wall 345 of the groove 344 is at least partially occupied by the back protective film 336. This reduces the amount of local space that needs to be filled with underfill or molding material, and lowers the risk of insufficient filling or voids in smaller gaps.

[0178] Furthermore, the back protective film 336, located between the back surface 333 of the bridging chip 330 and the inner wall 345 of the groove 344, can also buffer the thermal expansion difference between the bridging chip 330 and the substrate 340. Specifically, when the substrate 340 and the bridging chip 330 deform to different degrees due to temperature changes, the back protective film 336 can provide a flexible or semi-flexible transition layer between them, reducing the degree to which the deformation of the substrate 340 is directly transmitted to the back surface 333 of the bridging chip 330, thereby reducing the risk of cracks or fragments on the back surface 333 of the bridging chip 330.

[0179] Therefore, by providing a back protective film 336 on the back side 333 of the bridging chip 330 and positioning the back protective film 336 between the back side 333 of the bridging chip 330 and the inner wall 345 of the groove 344, this embodiment can provide protection, adhesion, positioning and stress buffering for the back side 333 of the bridging chip 330. This reduces the risk of back side cracking when the bridging chip 330 is subjected to mechanical stress, filling stress or thermal stress in the groove 344, and improves the mechanical reliability and assembly yield of the package structure 300C.

[0180] refer to Figure 3D , Figure 3D This is a cross-sectional view of the packaging structure 300D according to an embodiment of the present application, obtained along a first vertical section.

[0181] In some embodiments, such as Figure 3D As shown, the 300D packaging structure and Figure 3A The package structure shown is basically similar to that of the 300A; the same or corresponding structures can be referred to the aforementioned ones. Figure 3A The description of the corresponding embodiments will not be repeated here. Figure 3D The illustrated embodiments and Figure 3A The main difference in the illustrated embodiment is that the bridge chip 330 is electrically connected to the first line area of ​​at least one of the at least two fan-out modules via a hybrid bonding structure 390.

[0182] Specifically, the bridging chip 330 can be electrically connected to the first line area 312 of the first fan-out module 310 via a hybrid bonding structure 390, and / or, the bridging chip 330 can be electrically connected to the first line area 322 of the second fan-out module 320 via the hybrid bonding structure 390. In other words, the hybrid bonding structure 390 can be disposed between the bridging chip 330 and the first line area 312, and / or between the bridging chip 330 and the first line area 322, to serve as a high-density electrical connection structure between the bridging chip 330 and the corresponding fan-out module.

[0183] In some embodiments, the hybrid bonding structure 390 can serve as at least a part of the first connection structure 350. That is, at least a portion of the connection between the bridging chip 330 and the first line regions 312 and 322 can be achieved through direct bonding via the hybrid bonding structure 390 instead of using bump connections. Thus, the bridging chip 330 is still used to implement signal transmission between the first fan-out module 310 and the second fan-out module 320; only the connection method between the bridging chip 330 and the first line region of at least one fan-out module is replaced by a hybrid bonding connection instead of a bump connection.

[0184] By employing a hybrid bonding structure 390, the technical problems of large interconnect height, high local stacking height, and limited reliability of small-pitch bump bonding when using bump connections between the bridge chip 330 and the fan-out module can be solved. Specifically, in Figure 3A In the illustrated embodiment, the bridging chip 330 and the first line areas 312 and 322 can be electrically connected through the first connection structure 350. When the first connection structure 350 adopts a bump structure such as microbumps, the bumps themselves need to occupy a certain vertical height and form a certain gap between the bridging chip 330 and the fan-out module. For thin package structures, this gap increases the local stacking height.

[0185] And in Figure 3D In the illustrated embodiment, the bridging chip 330 is electrically connected to the first line region 312 and / or the first line region 322 via a hybrid bonding structure 390. Since the hybrid bonding structure 390 can reduce or eliminate the bump height required by a conventional bump structure, it can reduce the interconnect height between the bridging chip 330 and the corresponding fan-out module, thereby helping to reduce the local thickness of the package structure 300D in the region where the bridging chip 330 is located.

[0186] Furthermore, the hybrid bonding structure 390 is used to connect the bridging chip 330 to the first line area of ​​the fan-out module. Since the first line areas 312 and 322 are used to achieve high-density interconnection between modules, their connection density is high and the connection spacing is small. If traditional bump connections are used, the requirements for bump coplanarity, alignment accuracy, and bonding stability are high. By using the hybrid bonding structure 390, the influence of factors such as bump collapse, insufficient solder wetting, or bump misalignment on the bonding result can be reduced, thereby improving the connection reliability between the bridging chip 330 and the first line area.

[0187] Furthermore, since the hybrid bonding structure 390 is located between the bridging chip 330 and the first line area of ​​at least one fan-out module, a shorter electrical connection path can be formed between the bridging chip 330 and the first line area. Compared to connection via a bump structure with a certain height, the hybrid bonding structure 390 can reduce the vertical distance of the connection interface, thereby helping to reduce parasitic effects in the signal transmission path and improve the stability of high-density signal transmission between the bridging chip 330 and the fan-out module.

[0188] Therefore, by electrically connecting the bridging chip 330 to the first line area of ​​at least one fan-out module through the hybrid bonding structure 390, this embodiment can reduce the interconnection height between the bridging chip 330 and the fan-out module while maintaining the signal transmission function between the bridging chip 330 and the fan-out module, reducing the bonding risk caused by bump connections, and facilitating the realization of a thinner package structure 300D and more reliable high-density interconnects.

[0189] In some embodiments, continue to refer to Figure 3D , Figure 3D The 300D package structure shown can be further distinguished from... Figure 3A The embodiment shown is characterized in that: the substrate 340 is electrically connected to the second line area of ​​at least one of the at least two fan-out modules via a hybrid bonding structure 390.

[0190] Specifically, the substrate 340 may include substrate pads 343 facing the first fan-out module 310 and the second fan-out module 320. A hybrid bonding structure 390 may be disposed between the substrate pads 343 and the second circuit region 313 of the first fan-out module 310, and / or between the substrate pads 343 and the second circuit region 323 of the second fan-out module 320. Thus, the substrate pads 343 can be connected to the first fan-out module 310 and / or the second fan-out module 320 via hybrid bonding, thereby achieving electrical connection between the substrate 340 and the corresponding fan-out module.

[0191] In other words, this embodiment can correspond to a structure in which the substrate pads 343 are connected to a fan-out module or a fan-out wafer via a hybrid bonding method. Here, a fan-out wafer can be understood as a fan-out module structure in a wafer-level or reassembled wafer-level state during the manufacturing process; after the final package structure 300D is formed, the corresponding regions in the fan-out wafer can constitute the first fan-out module 310 and / or the second fan-out module 320.

[0192] In some embodiments, the hybrid bonding structure 390 can serve as at least a part of the second connection structure 360. That is, at least a portion of the connection between the substrate 340 and the second circuit regions 313, 323 can be achieved through direct bonding via the hybrid bonding structure 390, instead of using bump connections such as C4 bumps, copper pillars, or solder bumps. Thus, the substrate 340 is still used for signal transmission, power transmission, and / or grounding connections with the first fan-out module 310 and / or the second fan-out module 320 via the second circuit regions 313, 323; only the connection method between the substrate 340 and the second circuit regions of at least one fan-out module is replaced by a hybrid bonding connection instead of a bump connection.

[0193] By electrically connecting the substrate 340 to the second circuit area of ​​at least one fan-out module via a hybrid bonding structure 390, the technical problems of large interconnect height, large gap between the substrate and the fan-out module, and difficulty in reducing the overall thickness of the package structure when using bump connections between the substrate 340 and the fan-out module can be solved. Specifically, when C4 bumps, copper pillars, or solder bumps are used as connection structures between the substrate 340 and the second circuit areas 313 and 323, these connection structures typically require a certain vertical height and maintain a corresponding gap between the substrate 340 and the fan-out module. For thin package structures, this gap increases the overall thickness of the package structure 300D.

[0194] And in Figure 3D In the illustrated embodiment, the substrate pad 343 can be electrically connected to the second circuit region 313 of the first fan-out module 310 and / or the second circuit region 323 of the second fan-out module 320 via a hybrid bonding structure 390. Since the hybrid bonding structure 390 can reduce or eliminate the height required by conventional bump structures, the interconnect height between the substrate 340 and the fan-out modules can be reduced, thereby facilitating a reduction in the overall thickness of the package structure 300D.

[0195] Furthermore, when the substrate 340 is electrically connected to the second circuit regions 313 and 323 via the hybrid bonding structure 390, a shorter electrical connection path can be formed between the substrate pad 343 and the second circuit regions 313 and 323. Compared to connections via bump structures with a certain height, the hybrid bonding structure 390 can reduce the vertical distance of the connection interface and reduce the impact of parasitic resistance, parasitic inductance, or parasitic capacitance in the connection path on signal transmission, thereby improving the electrical connection performance between the substrate 340 and the fan-out module.

[0196] Furthermore, the hybrid bonding structure 390 can increase the connection density between the substrate 340 and the fan-out module. Specifically, hybrid bonding connections typically do not require the same level of bump collapse space as solder bumps, thus allowing for more connection points to be arranged in the same area, or reducing the connection area while meeting the same number of connections. This increases the design freedom for wiring and connections between the substrate 340 and the fan-out module.

[0197] It should be noted that the hybrid bonding structure 390 in this embodiment can be used for the connection between the substrate 340 and the first fan-out module 310, or for the connection between the substrate 340 and the second fan-out module 320, or for the connection between the substrate 340 and both the first fan-out module 310 and the second fan-out module 320. This application does not limit this.

[0198] Therefore, by electrically connecting the substrate 340 to the second circuit area of ​​at least one fan-out module through the hybrid bonding structure 390, this embodiment can reduce the interconnection height between the substrate 340 and the fan-out module while maintaining the electrical connection function between the substrate 340 and the fan-out module, reduce the overall thickness of the package structure 300D, and help improve the connection density and electrical connection reliability between the substrate pad 343 and the fan-out module.

[0199] refer to Figure 4A , Figure 4B , Figure 4C , Figure 4D , Figure 4E-1 , Figure 4E-2 , Figure 4F-1 , Figure 4F-2 , Figure 4F-3 and Figure 4F-4 .

[0200] Figures 4A to 4E-1 as well as Figure 4F-1 This is a schematic diagram of the manufacturing steps of the packaging structure 300A according to an embodiment of this application.

[0201] Figures 4A to 4E-1 as well as Figure 4F-2 This is a schematic diagram of the manufacturing steps of the packaging structure 300B according to an embodiment of this application.

[0202] Figures 4A to 4E-1 as well as Figure 4F-3 This is a schematic diagram of the manufacturing steps of the packaging structure 300C according to an embodiment of this application.

[0203] Figures 4A to 4E-2 as well as Figure 4F-4 This is a schematic diagram of the manufacturing steps of the packaging structure 300D according to an embodiment of this application.

[0204] In some embodiments, the manufacturing method described above includes providing at least two fan-out modules mounted on a first carrier board. Specifically, a first fan-out module 310 and a second fan-out module 320 may be provided mounted on the first carrier board. The first carrier board may be a temporary support for supporting the first fan-out module 310 and the second fan-out module 320 during subsequent installation of the bridging chip 330 and assembly of the substrate 340. The first fan-out module 310 includes a first circuit region 312 and a second circuit region 313, and the second fan-out module 320 includes a first circuit region 322 and a second circuit region 323.

[0205] In some embodiments, at least one of the at least two fan-out modules may include a functional chip, an input / output chip, and an interconnect chip, wherein the interconnect chip is electrically connected to the bridge chip 330.

[0206] In some embodiments, the interconnect chip may include a silicon chip or silicon interposer with through-silicon vias and is used to implement horizontal wiring and vertical interconnects within the fan-out module.

[0207] In some embodiments, the step of providing at least two fan-out modules supported on a first carrier plate 460 may include: forming a fan-out module structure on a glass carrier plate 410; removing the fan-out module structure from the glass carrier plate 410 and cutting it into a plurality of fan-out module units 450; and rearranging and fixing the plurality of fan-out module units 450 onto the first carrier plate 460 to form at least two fan-out modules. This step can be referred to... Figures 4A to 4D .

[0208] Specifically, such as Figure 4A As shown, a glass substrate 410 can be used as a temporary carrier to form a copper pillar structure 421 on the glass substrate 410, and a first chip assembly and multilayer redistribution process can be performed to form a first intermediate structure 400A. The first intermediate structure 400A may include a basic interconnect structure 420, which may include the copper pillar structure 421, a first assembled chip 422, and a multilayer redistribution structure 423. The copper pillar structure 421 can be used to form vertical interconnect paths in a fan-out module, the first assembled chip 422 can be a functional chip, interconnect chip, or other chip in a subsequent packaging structure, and the multilayer redistribution structure 423 can be used to redistribute chip signals and bring out lines.

[0209] like Figure 4B As shown, a second chip assembly can be performed on the basic interconnect structure 420 to set up a second assembled chip 430, and the assembled structure is then ground to form a second intermediate structure 400B. The second assembled chip 430 may include an input / output chip 431 and / or a computing chip 432. Through the grinding process, the thickness and surface flatness of the second intermediate structure 400B can be controlled, thereby providing a more stable structural foundation for subsequent removal of the glass substrate 410, cutting, and rearrangement.

[0210] like Figure 4C As shown, the glass substrate 410 can be removed, and the structure after removing the glass substrate 410 can be cut to form a third intermediate structure 400C. The third intermediate structure 400C may include multiple fan-out module units 450. Here, multiple fan-out module units 450 can be understood as multiple module units obtained by cutting the same fan-out module structure, and each fan-out module unit 450 may include a corresponding chip, rewiring structure, and connection structure.

[0211] like Figure 4DAs shown, at least two fan-out module units can be selected from multiple fan-out module units 450, and the selected at least two fan-out module units can be transferred and rearranged onto the first carrier plate 460 to obtain the fourth intermediate structure 400D. For ease of subsequent explanation, the at least two fan-out modules rearranged on the first carrier plate 460 are referred to as the first fan-out module 310 and the second fan-out module 320, respectively. That is to say, the first fan-out module 310 and the second fan-out module 320 can be formed by transferring and rearranging the corresponding fan-out module units 450, respectively.

[0212] The fourth intermediate structure 400D includes a first carrier board 460 and a first fan-out module 310 and a second fan-out module 320 supported on the first carrier board 460, thereby providing a support base for subsequent mounting of the bridging chip 330 and assembly of the substrate 340. The first carrier board 460 can be a silicon carrier board, a metal carrier board, or other carrier board that can provide mechanical support. In some embodiments, at least two selected fan-out module units can be fixed on the first carrier board 460 using a temporary adhesive layer 461 to form the fourth intermediate structure 400D. The fourth intermediate structure 400D can also be understood as a reconfigured structure supported on the first carrier board 460, which includes the first carrier board 460, the temporary adhesive layer 461, and the first fan-out module 310 and the second fan-out module 320 rearranged on the first carrier board 460.

[0213] Through the above steps, a fan-out module structure is first formed on the glass carrier 410, then the fan-out module structure is cut into multiple fan-out module units 450, and at least two fan-out module units are rearranged on the first carrier 460. This allows the subsequent mounting steps of the bridging chip 330 and the assembly steps of the substrate 340 to be performed while supported by the first carrier 460. Therefore, the relative positional stability of the first fan-out module 310 and the second fan-out module 320 can be maintained in the rearranged module state, reducing the risk of handling deformation, warping, or misalignment during the subsequent mounting of the bridging chip 330 and assembly of the substrate 340.

[0214] Furthermore, since multiple fan-out module units 450 can be rearranged on the first carrier board 460 according to the assembly requirements of the subsequent bridging chip 330 and substrate 340, the flexibility of the fan-out module layout can be improved, enabling the bridging chip 330 to be placed between adjacent fan-out modules or above the corresponding line area in subsequent steps, thereby providing a process basis for realizing high-density interconnection between modules.

[0215] In some embodiments, after providing at least two fan-out modules carried on a first carrier board 460, a bridging chip 330 is disposed on one side of the at least two fan-out modules, and the bridging chip 330 is electrically connected to the first line area of ​​the at least two fan-out modules respectively through a plurality of first connection structures 350. Specifically, the bridging chip 330 can be disposed on one side of the first fan-out module 310 and the second fan-out module 320, and the bridging chip 330 is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 respectively through a plurality of first connection structures 350. Thus, the bridging chip 330 can be used to realize signal transmission between the first fan-out module 310 and the second fan-out module 320.

[0216] In some implementations, the step of placing the bridging chip 330 on one side of at least two fan-out modules can be referred to Figure 4E-1 and Figure 4E-2 .like Figure 4E-1 and Figure 4E-2 As shown, with the first fan-out module 310 and the second fan-out module 320 supported on the first carrier board 460, the first fan-out module 310 and the second fan-out module 320 can be ground to adjust their thickness and surface flatness. Subsequently, an insulating or protective layer 470 can be formed on the first fan-out module 310 and the second fan-out module 320, and openings can be formed in the insulating or protective layer 470 to expose the corresponding connection positions in the first circuit areas 312 and 322, or connection pads 471 or other connection structures can be formed on the first circuit areas 312 and 322.

[0217] Subsequently, the bridging chip 330 is mounted on one side of the first fan-out module 310 and the second fan-out module 320, so that the bridging chip 330 is electrically connected to the first line areas 312 and 322 respectively through multiple first connection structures 350 to form a fifth intermediate structure 400E-1 or 400E-2. The multiple first connection structures 350 can be located between the bridging chip 330 and the first line areas 312 and 322, and are used to form electrical and mechanical connections between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320.

[0218] In some embodiments, the bridging chip 330 can be electrically connected to the first line areas 312 and 322 of the first fan-out module 310 and the second fan-out module 320 by reflow soldering, thermoforming, or hybrid bonding.

[0219] For example, when the first connection structure 350 includes solder bumps, microbumps, or other reflowable connection structures, the bridging chip 330 can be electrically connected to the first line areas 312 and 322 via reflow soldering. Please refer to [link / reference] for details. Figure 4E-1 .

[0220] For example, when the first connection structure 350 includes copper pillars, microbumps, or other connection structures suitable for pressure bonding, the bridging chip 330 can be electrically connected to the first line areas 312 and 322 via thermocompression bonding. Please refer to [link / reference needed] for details. Figure 4E-1 .

[0221] For example, when the bridging chip 330 and the first line regions 312 and 322 respectively have bondable metal bonding portions and dielectric bonding portions, the bridging chip 330 can be electrically connected to the first line regions 312 and 322 through a hybrid bonding method. Please refer to [link / reference needed] for details. Figure 4E-2 .

[0222] It should be noted that the above-mentioned reflow soldering, thermoforming, and hybrid bonding methods can be used selectively, or in combination, depending on the requirements of different connection areas or different connection structures. This application does not limit the specific bonding method between the bridge chip 330 and the first line areas 312 and 322, as long as the bridge chip 330 can be electrically connected to the first line areas of at least two fan-out modules respectively, and the bridge chip 330 can be used to realize signal transmission between at least two fan-out modules.

[0223] Since the bridging chip 330 is positioned on the fan-out module side with at least two fan-out modules supported on the first carrier board 460, therefore, Figure 4E-1 and Figure 4E-2 The steps shown can be understood as the bridge chip on-wafer step, i.e., the BoW step. BoW is an abbreviation for Bridge Die on Wafer, which means that the bridge chip 330 is set to the fan-out module side at the wafer level or in a reassembled wafer level state.

[0224] Through the above steps, the bridging chip 330 can be electrically connected to the first line areas 312 and 322 before the substrate 340 is assembled. Since the first carrier board 460 continuously supports the first fan-out module 310 and the second fan-out module 320 during the bonding process of the bridging chip 330, the alignment stability between the bridging chip 330 and the first line areas 312 and 322 can be improved. Furthermore, since the bonding step of the bridging chip 330 is performed before the assembly step of the substrate 340, the small-pitch connection step corresponding to the bridging chip 330 can be performed separately from the large-pitch connection step corresponding to the subsequent substrate 340, thereby reducing the difficulty of synchronous alignment of the mixed-pitch connection structure.

[0225] In some embodiments, after the bridging chip 330 is electrically connected to at least two fan-out modules and before the substrate 340 is assembled to at least two fan-out modules, a first filler material is filled between the bridging chip 330 and at least two fan-out modules to form a first filler layer 370.

[0226] Specifically, in Figure 4E-1 and Figure 4E-2 In the illustrated steps, the bridging chip 330 is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 via multiple first connection structures 350. After the bridging chip 330 completes the electrical connection with the first fan-out module 310 and the second fan-out module 320, a gap will be formed between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320 due to the presence of the first connection structures 350. At this time, a first filler material can be filled into the gap before assembling the substrate 340 to the first fan-out module 310 and the second fan-out module 320.

[0227] In some embodiments, a first filler material fills a gap beneath the bridging chip 330, the gap having a size of 200 μm to 500 μm. Here, the gap beneath the bridging chip 330 can be understood as the space between the surface of the bridging chip 330 facing the first fan-out module 310 and the second fan-out module 320 and the opposing surfaces of the first fan-out module 310 and the second fan-out module 320. The size of the gap can be a spacing along the thickness direction of the package structure, or it can be a characteristic dimension of the space to be filled beneath the bridging chip 330.

[0228] In some examples, the size of the gap can be 200μm, 300μm, 400μm, 500μm, or any value between 200μm and 500μm. By setting the size of the gap to 200μm to 500μm, sufficient flow and filling space can be provided for the first filler material, allowing it to fully enter under the bridging chip 330 and cover the first connection structure 350. If the gap is too small, the first filler material will not flow sufficiently under the bridging chip 330, easily resulting in insufficient filling or voids; if the gap is too large, the support distance between the bridging chip 330 and the fan-out module increases, which may reduce the support and stress dispersion effect of the first filler layer 370 on the first connection structure 350 and increase the local stacking height. Therefore, setting the size of the gap to 200μm to 500μm is beneficial for achieving a balance between filling feasibility, structural support effect, and package thickness.

[0229] In some embodiments, a first filler material can flow from the edge region of the bridging chip 330 into the gap between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, and at least partially cover the plurality of first connection structures 350. The first filler material can be cured after filling to form a first filler layer 370. The first filler layer 370 can be located between the connection surface of the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, for supporting the bridging chip 330 and protecting the plurality of first connection structures 350.

[0230] In some embodiments, the first filler material may include an underfill, molding compound, adhesive, or other fillable and curable insulating material. For example, the first filler material may be an underfill, which can enter the gap between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320 through capillary action or dispensing pressure. Alternatively, the first filler material may be a molding compound or adhesive to form a support, covering, or adhesive structure between the bridging chip 330 and the fan-out modules.

[0231] By filling the first filler material after the bridging chip 330 is electrically connected to at least two fan-out modules and before the substrate 340 is assembled, the small-pitch connection area between the bridging chip 330 and the fan-out modules can be protected before the substrate 340 is assembled. Because the spacing between the multiple first connection structures 350 is small, they are sensitive to mechanical stress, thermal stress, and subsequent assembly pressure. If the substrate 340 is assembled directly without filling with protective material, the pressure, thermal deformation, or handling stress generated during the assembly process may concentrate on the first connection structures 350, thereby increasing the risk of cracks, breakage, or abnormal contact in the first connection structures 350.

[0232] After the first filler material is filled between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, it can form a support and buffer structure between the bridging chip 330 and the fan-out modules. Therefore, some of the mechanical load generated during subsequent assembly of the substrate 340 can be dispersed to the surrounding areas of the bridging chip 330 and the fan-out modules through the first filler layer 370, and is less likely to be concentrated on the multiple first connection structures 350. Furthermore, the first filler layer 370 can also limit the relative displacement between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320, thereby reducing the risk of fatigue failure of the first connection structures 350 due to differences in thermal expansion or mechanical loads.

[0233] Therefore, by filling the first filler material after the bridging chip 330 is electrically connected to at least two fan-out modules and before the substrate 340 is assembled to the at least two fan-out modules, this embodiment can enhance the structural reliability of the high-density connection area between the bridging chip 330 and the fan-out modules in advance before the substrate 340 is assembled, reduce the adverse effects of the subsequent substrate 340 assembly process on the first connection structure 350, and improve the manufacturing yield and bonding reliability of the package structure 300A.

[0234] In some embodiments, after the bridging chip 330 is electrically connected to the first line area of ​​at least two fan-out modules, the substrate 340 is assembled to one side of at least two fan-out modules, and the substrate 340 is electrically connected to the second line area of ​​at least two fan-out modules through a plurality of second connection structures 360.

[0235] Specifically, the substrate 340 can be assembled onto the side of the first fan-out module 310 and the second fan-out module 320 where the bridging chip 330 is provided, and the substrate 340 can be electrically connected to the second line area 313 of the first fan-out module 310 and the second line area 323 of the second fan-out module 320 respectively through multiple second connection structures 360.

[0236] In some embodiments, the step of assembling the substrate 340 to one side of at least two fan-out modules can be referred to Figure 4F-1 , Figure 4F-2 , Figure 4F-3 and Figure 4F-4 .

[0237] like Figure 4F-1 , Figure 4F-2 , Figure 4F-3 and Figure 4F-4 As shown, with the first carrier plate 460 supporting the first fan-out module 310 and the second fan-out module 320, the substrate 340 can be reverse-assembled to one side of the first fan-out module 310 and the second fan-out module 320. Here, reverse assembly can be understood as follows: with the first fan-out module 310 and the second fan-out module 320 supported by the first carrier plate 460, the substrate pads 343 of the substrate 340 are oriented towards the first fan-out module 310 and the second fan-out module 320, and the substrate 340 is brought close to the first fan-out module 310 and the second fan-out module 320 from the opposite side of the first carrier plate 460, so as to assemble the substrate 340 to the side of the first fan-out module 310 and the second fan-out module 320 where the bridging chip 330 is provided.

[0238] Specifically, in Figure 4E-1 and Figure 4E-2After the steps shown, the bridging chip 330 is positioned on one side of the first fan-out module 310 and the second fan-out module 320, and is electrically connected to the first line areas 312 and 322 respectively through multiple first connection structures 350. Figure 4F-1 , Figure 4F-2 , Figure 4F-3 and Figure 4F-4 In the steps shown, while the first carrier board 460 is still supporting the first fan-out module 310 and the second fan-out module 320, the substrate 340 can be flipped or adjusted so that its substrate pads 343 face the second line areas 313 and 323. The substrate 340 is electrically connected to the second line area 313 of the first fan-out module 310 and the second line area 323 of the second fan-out module 320 through multiple second connection structures 360, so as to form the sixth intermediate structures 400F-1, 400F-2, 400F-3 and 400F-4.

[0239] In other words, the assembly step of substrate 340 is not to assemble individual or dispersed fan-out modules after removing the first carrier plate 460, but rather to assemble substrate 340 onto the fan-out module side supported by the first carrier plate 460 while the first carrier plate 460 is still providing support. Therefore, during the assembly of substrate 340, the relative positions of the first fan-out module 310 and the second fan-out module 320 are constrained and supported by the first carrier plate 460, and are less prone to significant relative displacement due to handling, pressing, heating, or cooling.

[0240] By employing the aforementioned reverse assembly method, the problems of warping, displacement, or misalignment caused by the lack of stable support during the assembly of at least two fan-out modules on the substrate 340 can be resolved. Specifically, the first fan-out module 310 and the second fan-out module 320 have already been rearranged on the first carrier board 460 in the preceding steps, and the bridging chip 330 has been electrically connected to the first circuit areas 312 and 322. If the first carrier board 460 is removed before the substrate 340 is assembled, the first fan-out module 310 and the second fan-out module 320 may deform due to their own dimensions, material stress, or the handling process, thereby affecting the alignment accuracy between the substrate 340 and the second circuit areas 313 and 323.

[0241] In this embodiment, the first carrier plate 460 supports the first fan-out module 310 and the second fan-out module 320 before and during the assembly of the substrate 340. Therefore, the first carrier plate 460 can provide flat support and positional constraints for the first fan-out module 310 and the second fan-out module 320. In this way, when the substrate 340 is assembled in reverse to the fan-out module side, the second connection structure 360 ​​can be aligned and engaged with the second line areas 313 and 323 under a relatively stable module positional relationship, thereby reducing the alignment difficulty during the assembly process of the substrate 340.

[0242] Furthermore, since the first connection structure 350 corresponding to the bridging chip 330 has already been... Figure 4E-1 and Figure 4E-2 Complete the connection in the steps shown. Figure 4F-1 , Figure 4F-2 and Figure 4F-3 When the substrate 340 is reverse-assembled as shown, the main step is to connect the substrate 340 to the second connection structure 360 ​​between the second circuit regions 313 and 323. Therefore, this embodiment can complete the small-pitch connection step corresponding to the bridging chip 330 and the large-pitch connection step corresponding to the substrate 340 in stages, avoiding the simultaneous alignment of the small-pitch connection structure and the large-pitch connection structure in the same bonding step, thereby improving the process window and bonding reliability.

[0243] Specifically, in one embodiment, reference can be made to Figure 4F-1 While the first carrier board 460 is holding the first fan-out module 310 and the second fan-out module 320, the substrate 340 is reverse-assembled to the side of the first fan-out module 310 and the second fan-out module 320 where the bridging chip 330 is provided, to form the sixth intermediate structure 400F-1.

[0244] In other embodiments, the substrate 340 may have a recess 344. After the substrate 340 is assembled to the first fan-out module 310 and the second fan-out module 320, the bridging chip 330 extends at least partially into the recess 344. See details [link to relevant documentation]. Figure 4F-2 and Figure 4F-3 . Figure 4F-2 and Figure 4F-3 The steps shown are the same as Figure 4F-1 The steps shown are basically similar, the difference being: Figure 4F-2 and Figure 4F-3 The substrate 340 has a recess 344, and when the substrate 340 is assembled to the first fan-out module 310 and the second fan-out module 320, the bridging chip 330 is at least partially inserted into the recess 344 to form the sixth intermediate structures 400F-2 and 400F-3.

[0245] The groove 344 can be disposed on the side of the substrate 340 facing the first fan-out module 310 and the second fan-out module 320. The position of the groove 344 can correspond to the position of the bridging chip 330. Thus, during the reverse assembly of the substrate 340 to the first fan-out module 310 and the second fan-out module 320, the groove 344 of the substrate 340 can move toward the bridging chip 330, so that at least a portion of the bridging chip 330 enters the space defined by the groove 344.

[0246] It should be noted that the fact that the bridging chip 330 at least partially extends into the recess 344 does not mean that the bridging chip 330 is pre-deposited on the substrate 340. The bridging chip 330 is still pre-deposited on one side of the first fan-out module 310 and the second fan-out module 320 in the preceding steps, and is electrically connected to the first line areas 312 and 322 respectively through the first connection structure 350. That is to say, in Figure 4F-2 and Figure 4F-3 In the embodiment shown, the bridging chip 330 still belongs to the bridging structure pre-set on the fan-out module side; the groove 344 of the substrate 340 is mainly used to accommodate at least a portion of the bridging chip 330 during the assembly process of the substrate 340.

[0247] By providing a groove 344 on the substrate 340 and ensuring that the bridging chip 330 extends at least partially into the groove 344 when the substrate 340 is assembled to the first fan-out module 310 and the second fan-out module 320, the technical problem of the bridging chip 330 being located between the substrate 340 and the fan-out module, which easily increases the local stacking height and may cause spatial interference between the substrate 340 and the bridging chip 330, can be solved.

[0248] Specifically, in the design where the bridge chip 330 is pre-positioned on the fan-out module side, the bridge chip 330 occupies part of the height space between the substrate 340 and the fan-out module. If the substrate 340 is a planar structure, a vertical gap needs to be reserved between the substrate 340 and the fan-out module to accommodate the bridge chip 330, which may increase the local thickness of the package structure 300A. In contrast, in Figure 4F-2 and Figure 4F-3 In the illustrated embodiment, the recess 344 provides a partial accommodating space for the bridging chip 330, allowing at least a portion of the bridging chip 330 in the thickness direction to enter the recess 344 of the substrate 340. This reduces the additional spacing between the substrate 340 and the fan-out module required to accommodate the bridging chip 330.

[0249] Furthermore, since the bridging chip 330 extends at least partially into the recess 344, the assembly space between the substrate 340 and the fan-out module can be utilized more fully. While maintaining the process advantage of the bridging chip 330 being pre-positioned on the fan-out module side, the local stacking height of the package structure in the area where the bridging chip 330 is located can be reduced, and the risk of mechanical interference between the bridging chip 330 and the substrate 340 can be reduced.

[0250] Therefore, by providing a groove 344 on the substrate 340 and allowing the bridging chip 330 to extend at least partially into the groove 344 during the assembly of the substrate 340, this embodiment can provide local accommodating space for the bridging chip 330 without changing the fact that the bridging chip 330 is pre-set on the fan-out module side. This improves the spatial adaptability of the substrate 340 and the fan-out module during assembly, reduces the local thickness of the packaging structure, and improves the reliability of subsequent assembly.

[0251] In some embodiments, the depth of the groove 344 can be 50 μm to 80 μm, and / or the thickness of the bridging chip 330 can be 40 μm to 60 μm.

[0252] Specifically, the depth of the groove 344 can be understood as the dimension of the recess inward from the side surface of the substrate 340 facing the first fan-out module 310 and the second fan-out module 320 along the thickness direction of the substrate 340. The thickness of the bridging chip 330 can be understood as the dimension of the bridging chip 330 along the thickness direction of the package structure.

[0253] In some embodiments, the depth of the groove 344 can be 50 μm, 60 μm, 70 μm, 80 μm, or any value between 50 μm and 80 μm. The thickness of the bridging chip 330 can be 40 μm, 50 μm, 60 μm, or any value between 40 μm and 60 μm.

[0254] By setting the depth of the recess 344 to 50 μm to 80 μm, the recess 344 can have sufficient accommodating depth to accommodate at least a portion of the bridge chip 330 in the thickness direction when the substrate 340 is assembled to the first fan-out module 310 and the second fan-out module 320. By setting the thickness of the bridge chip 330 to 40 μm to 60 μm, the bridge chip 330 can be more easily accommodated by the recess 344 while ensuring the necessary structural strength and interconnection function.

[0255] If the depth of the recess 344 is too small, the portion of the bridging chip 330 entering the recess 344 will be less, requiring a larger vertical gap between the substrate 340 and the fan-out module, thus reducing the thinning effect of the package. If the depth of the recess 344 is too large, it may reduce the structural strength of the substrate 340 near the recess 344 and increase the difficulty of substrate processing. Similarly, if the bridging chip 330 is too thick, even with the recess 344, the bridging chip 330 may still protrude significantly beyond the recess 344; if the bridging chip 330 is too thin, it may reduce its mechanical strength during handling, mounting, filling, or thermal cycling. Therefore, by matching the above-mentioned dimensional ranges, a better balance can be achieved between the accommodation space, package thickness, substrate strength, and bridging chip reliability.

[0256] In some embodiments, after the bridging chip 330 extends at least partially into the recess 344, an underfill material or a molding compound may be filled between the bridging chip 330 and the inner wall 345 of the recess 344.

[0257] Specifically, the recess 344 may include an inner wall 345. The inner wall 345 may include the bottom wall and / or sidewalls of the recess 344. When the bridging chip 330 extends at least partially into the recess 344, a gap may be formed between the bridging chip 330 and the inner wall 345. Underfill material or molding compound may be filled in this gap and located between the bridging chip 330 and the inner wall 345.

[0258] In some embodiments, the underfill material can flow along the periphery of the bridging chip 330 or into the opening area of ​​the recess 344, forming a filling support structure after curing. In other embodiments, the molding compound can at least partially fill the recess 344 and cover at least a portion of the bridging chip 330 located within the recess 344. The underfill material and the molding compound can be used alone or in combination.

[0259] By filling the space between the bridging chip 330 and the inner wall of the recess 345 with underfill material or molding material, the gap between the bridging chip 330 and the recess 344 can be filled, reducing the local suspended area of ​​the bridging chip 330 within the recess 344. Therefore, when the package structure is subjected to mechanical loads, temperature changes, or reliability testing, the bridging chip 330 is less likely to experience significant displacement or vibration relative to the substrate 340, thereby reducing the risk of additional stress on the first connection structure 350 between the bridging chip 330 and the first fan-out module 310 and the second fan-out module 320.

[0260] Furthermore, the underfill material or molding compound is located between the bridging chip 330 and the inner wall 345 of the groove, serving as a stress buffer medium between the bridging chip 330 and the substrate 340. Since the substrate 340 and the bridging chip 330 may have different amounts of thermal deformation when the temperature changes, the underfill material or molding compound can reduce the degree to which the thermal deformation of the substrate 340 is directly transmitted to the bridging chip 330, thereby reducing the risk of cracking, chipping, or connection failure of the bridging chip 330.

[0261] In other embodiments, reference may be made to Figure 4F-3 . Figure 4F-3 The illustrated embodiments and Figure 4F-2 The embodiments shown are basically similar, except that a back protective film 336 is formed on the back side 333 of the bridging chip 330 before the bridging chip 330 is placed in the first fan-out module 310 and the second fan-out module 320.

[0262] Specifically, the bridging chip 330 may include a connection surface 332 and a back surface 333. The connection surface 332 is used to face the first fan-out module 310 and the second fan-out module 320 in the steps shown in FIG. 4E, and is electrically connected to the first line areas 312 and 322 through the first connection structure 350. The back surface 333 is disposed opposite to the connection surface 332 and faces the groove 344 of the substrate 340 after the substrate 340 is assembled. The back protective film 336 may be pre-formed on the back surface 333 of the bridging chip 330 before the bridging chip 330 is attached to the first fan-out module 310 and the second fan-out module 320.

[0263] In some embodiments, the back protective film 336 may be an adhesive protective film. When the substrate 340 is assembled to the first fan-out module 310 and the second fan-out module 320, the back protective film 336 is positioned between the back surface 333 of the bridging chip 330 and the inner wall 345 of the recess 344. That is, in Figure 4F-3 In the steps shown, the bridging chip 330 extends at least partially into the groove 344, and the back protective film 336 is located between the back surface 333 of the bridging chip 330 and the inner wall 345 of the groove to form the sixth intermediate structure 400F-3.

[0264] By providing a back protective film 336 on the back side 333 of the bridging chip 330, protection can be formed on the back side 333 of the bridging chip 330 after it has at least partially extended into the groove 344. Specifically, the bridging chip 330 typically comprises a silicon-based material. When the back side 333 of the bridging chip 330 is close to the inner wall 345 of the groove 344, it may be subjected to localized mechanical or thermal stress during substrate 340 assembly, material filling, material curing, or thermal cycling. The back protective film 336, located between the back side 333 of the bridging chip 330 and the inner wall 345 of the groove, can isolate, disperse, or buffer this localized stress, thereby reducing the risk of cracks, chipping, or breakage of the back side 333 of the bridging chip 330.

[0265] Furthermore, when the back protective film 336 is an adhesive protective film, it can also provide a certain positioning and bonding effect between the bridging chip 330 and the inner wall of the groove 345. Therefore, during the assembly of the substrate 340 and subsequent filling of the underfill material or molding material, the position of the bridging chip 330 is less likely to shift. Simultaneously, the back protective film 336 can at least partially occupy the space between the back surface 333 of the bridging chip 330 and the inner wall of the groove 345, thereby reducing the risk of excessively large local gaps or insufficient filling of the filling material.

[0266] In some embodiments, assembling the substrate 340 to the first fan-out module 310 and the second fan-out module 320 may include: electrically connecting the substrate pads 343 of the substrate 340 to the second line area 313 of the first fan-out module 310 and / or the second line area 323 of the second fan-out module 320 through a hybrid bonding structure 390.

[0267] Specifically, you can refer to Figure 4F-4 . Figure 4F-4 The illustrated embodiments and Figure 4F-1 The embodiments shown are basically similar, and the same or corresponding structures can be referred to the foregoing. Figure 4F-1 The descriptions of the corresponding embodiments will not be repeated here. Figure 4F-4 The illustrated embodiments and Figure 4F-1 The difference in the embodiment shown is that when the substrate 340 is assembled to the first fan-out module 310 and the second fan-out module 320, the substrate pads 343 of the substrate 340 are electrically connected to the second line areas 313 and 323 through the hybrid bonding structure 390 to form the sixth intermediate structure 400F-4.

[0268] In some embodiments, substrate pads 343 are disposed on the side of substrate 340 facing the first fan-out module 310 and the second fan-out module 320. The second circuit regions 313 and 323 may each include module-side bonding regions corresponding to the substrate pads 343. When substrate 340 is assembled to the first fan-out module 310 and the second fan-out module 320, the substrate pads 343 can be aligned with the corresponding bonding regions in the second circuit regions 313 and 323, and a hybrid bonding structure 390 can be formed through a hybrid bonding method. Thus, substrate 340 can be electrically connected to the first fan-out module 310 and / or the second fan-out module 320 through the substrate pads 343 and the hybrid bonding structure 390.

[0269] In some embodiments, the hybrid bonding structure 390 may include mutually bonded metal bonding portions and mutually bonded dielectric bonding portions. The metal bonding portions form electrical connection paths between the substrate pads 343 and the second circuit regions 313 and 323; the dielectric bonding portions form mechanical connections and insulating supports between the substrate 340 and the first fan-out module 310 and the second fan-out module 320. Through the cooperation of the metal bonding portions and the dielectric bonding portions, both electrical and structural connections can be formed between the substrate 340 and the fan-out modules at a relatively low interconnect height.

[0270] It should be noted that, Figure 4F-4 The illustrated embodiment corresponds to a scheme where the substrate pad 343 is connected to a fan-out module or a fan-out wafer via a hybrid bonding method. Here, the fan-out wafer can be understood as an intermediate structure where the first fan-out module 310 and the second fan-out module 320 are in a wafer-level or reassembled wafer-level state on the first carrier 460. That is, while the first carrier 460 is holding the first fan-out module 310 and the second fan-out module 320, the substrate 340 can be assembled to the fan-out module side via a hybrid bonding method to form the sixth intermediate structure 400F-4.

[0271] The above method solves the problem of large interconnect height and difficulty in reducing the overall package thickness when C4 bumps, copper pillars, or solder bumps are used to connect the substrate 340 and the fan-out module. Specifically, traditional bump connection structures usually require a certain vertical height and form a corresponding gap between the substrate 340 and the fan-out module. In contrast, the hybrid bonding structure 390 can reduce or eliminate the bump height required by the traditional bump structure, forming a shorter electrical connection path between the substrate pad 343 and the second circuit areas 313 and 323, thereby helping to reduce the interconnect height between the substrate 340 and the fan-out module.

[0272] Furthermore, since the hybrid bonding structure 390 can form the connection between the substrate pad 343 and the second circuit regions 313 and 323 with a smaller connection height, it is beneficial to reduce the overall thickness of the package structure 300D and reduce the impact of problems such as bump collapse, insufficient solder wetting, or abnormal solder bonding on the connection reliability between the substrate 340 and the fan-out module. At the same time, the shorter connection path can also reduce the parasitic resistance, parasitic inductance, or parasitic capacitance at the connection interface between the substrate 340 and the fan-out module, thereby improving electrical connection performance.

[0273] It should be noted that this step can be understood as the on-board wafer step, or the SoW step. SoW is an abbreviation for Substrateon Wafer, which means assembling the substrate 340 to the fan-out module side in a wafer-level or reassembled wafer-level state.

[0274] After the connection between the substrate 340 and the first fan-out module 310 and the second fan-out module 320 is completed, the assembled structure can be cut to form multiple package structures. It should be noted that the first carrier plate 460, as a temporary support, can be removed after the substrate 340 is assembled to at least two fan-out modules. In some embodiments, the first carrier plate 460 and the temporary adhesive layer 461 can be removed after the substrate 340 is assembled to at least two fan-out modules, and before or after cutting to form multiple package structures 300A, 300B, 300C, or 300D.

[0275] In some embodiments, such as Figure 4F-1 As shown, after forming the sixth intermediate structure 400F-1, the first carrier plate 460 and the temporary adhesive layer 461 located between the first carrier plate 460 and the first fan-out module 310 and the second fan-out module 320 can be removed to obtain the following result: Figure 3A The package structure shown is 300A.

[0276] In some embodiments, such as Figure 4F-2 As shown, after forming the sixth intermediate structure 400F-2, the first carrier plate 460 and the temporary adhesive layer 461 located between the first carrier plate 460 and the first fan-out module 310 and the second fan-out module 320 can also be removed to obtain the following result: Figure 3B The package structure shown is 300B. Compared to... Figure 3A The package structure shown is 300A. Figure 3B The substrate 340 in the package structure 300B shown has a recess 344, and the bridging chip 330 is at least partially accommodated within the recess 344. Thus, after the first carrier 460 and the temporary adhesive layer 461 are removed, the spatial fit between the recess 344 and the bridging chip 330 is still preserved in the final package structure 300B.

[0277] In other embodiments, during the formation Figure 4F-3 After the sixth intermediate structure 400F-3 shown, the first carrier plate 460 and the temporary adhesive layer 461 can be removed to obtain the following: Figure 3C The package structure shown is 300C. Figure 3C The package structure 300C shown is compared to Figure 3B The package structure 300B shown further includes a back protective film 336 disposed on the back side 333 of the bridging chip 330.

[0278] In some embodiments, in forming Figure 4F-4 After the sixth intermediate structure 400F-4 shown, the first carrier plate 460 and the temporary adhesive layer 461 located between the first carrier plate 460 and the first fan-out module 310 and the second fan-out module 320 can be removed to obtain the following: Figure 3D The package structure shown is 300D. Figure 3D The 300D package structure shown is compared to Figure 3A The package structure 300A shown differs at least in that the substrate pads 343 of the substrate 340 are electrically connected to the second circuit area of ​​the first fan-out module 310 and / or the second fan-out module 320 via a hybrid bonding structure 390. Therefore, the package structure 300D can maintain the electrical connection between the substrate 340 and the fan-out modules while reducing the interconnect height between them, and improving the thinness and connection reliability of the package structure.

[0279] In this embodiment, the spacing between the plurality of first connection structures 350 is smaller than the spacing between the plurality of second connection structures 360. That is, the connection structure between the bridging chip 330 and the first line regions 312 and 322 has a relatively small spacing, while the connection structure between the substrate 340 and the second line regions 313 and 323 has a relatively large spacing. Therefore, the small-spacing connection step corresponding to the bridging chip 330 and the large-spacing connection step corresponding to the substrate 340 can be performed separately in the manufacturing process. For example, the small-spacing connection step corresponding to the bridging chip 330 can be performed separately. Figure 4E-1 and Figure 4E-2 The connection steps for the large-pitch array corresponding to substrate 340 can be corresponding to Figure 4F-1 , Figure 4F-2 , Figure 4F-3 as well as Figure 4F-4 .

[0280] In some embodiments, the plurality of first connection structures 350 may be microbumps for high-density interconnects, and the plurality of second connection structures 360 may be C4 bumps, copper pillars, or solder bumps for low-density interconnects. Specifically, in Figure 4E-1 and Figure 4E-2In the steps shown, the bridging chip 330 is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 through multiple first connection structures 350. Since the first line areas 312 and 322 are used to realize high-density signal transmission between modules, the first connection structure 350 can use small-sized microbumps with small spacing to provide more connection points in a limited area.

[0281] exist Figure 4F-1 , Figure 4F-2 , Figure 4F-3 as well as Figure 4F-4 In the steps shown, the substrate 340 is electrically connected to the second circuit area 313 of the first fan-out module 310 and the second circuit area 323 of the second fan-out module 320 through multiple second connection structures 360. Since the second circuit areas 313 and 323 are used to achieve a relatively low-density connection between the fan-out module and the substrate 340, the second connection structures 360 can adopt C4 bumps, copper pillars or solder bumps to provide a larger connection size, higher mechanical support capability and better process tolerance.

[0282] In some embodiments, the spacing between the plurality of first connection structures 350 is less than 50 μm, and the spacing between the plurality of second connection structures 360 is greater than 100 μm. For example, the spacing between the first connection structures 350 can be 45 μm or other values ​​less than 50 μm, and the spacing between the second connection structures 360 can be 110 μm or other values ​​greater than 100 μm. Thus, the high-density interconnect region corresponding to the bridging chip 330 and the low-density interconnect region corresponding to the substrate 340 can adopt significantly different connection spacings.

[0283] Through the above settings, it is possible to Figure 4E-1 and Figure 4E-2 The bonding steps of the bridging chip 330 shown mainly correspond to the small-pitch, high-density first connection structure 350, while Figure 4F-1 , Figure 4F-2 , Figure 4F-3 as well as Figure 4F-4 The assembly steps of substrate 340 shown mainly correspond to the large-pitch, low-density second connection structure 360. Since the two are connected in different steps, it is not necessary to meet the alignment requirements of small-pitch microbumps and large-pitch bumps in the same bonding step during manufacturing. This helps to expand the process window and reduce the difficulty of synchronous alignment of mixed-pitch connection structures.

[0284] Furthermore, the first connection structure 350 employs an arrangement spacing of less than 50 μm, which can meet the high-density signal transmission requirements between the bridging chip 330 and the first line areas 312 and 322; the second connection structure 360 ​​employs an arrangement spacing of greater than 100 μm, which can improve the alignment tolerance and mechanical stability of the connection between the substrate 340 and the fan-out module. Therefore, this embodiment can improve the process adaptability and bonding reliability of the substrate 340 assembly steps while meeting the high-density interconnection requirements between modules.

[0285] In some embodiments, the bonding step between the bridging chip 330 and the first line area of ​​at least two fan-out modules, and the bonding step between the substrate 340 and the second line area of ​​at least two fan-out modules, are performed in different bonding steps.

[0286] Specifically, such as Figure 4E-1 and Figure 4E-2 As shown, in the first bonding step, the bridging chip 330 can be placed on one side of the first fan-out module 310 and the second fan-out module 320, and the bridging chip 330 is electrically connected to the first line area 312 of the first fan-out module 310 and the first line area 322 of the second fan-out module 320 respectively through multiple first connection structures 350. This first bonding step is mainly used to complete the small-pitch connection between the bridging chip 330 and the first line areas 312 and 322 to form a high-density interconnect path for signal transmission between the first fan-out module 310 and the second fan-out module 320.

[0287] like Figure 4F-1 , Figure 4F-2 , Figure 4F-3 as well as Figure 4F-4 As shown, in the second bonding step, after the bridging chip 330 has been electrically connected to the first line areas 312 and 322, the substrate 340 is assembled onto one side of the first fan-out module 310 and the second fan-out module 320. Multiple second connection structures 360 then electrically connect the substrate 340 to the second line area 313 of the first fan-out module 310 and the second line area 323 of the second fan-out module 320, respectively. This second bonding step is mainly used to complete the large-pitch connection between the substrate 340 and the second line areas 313 and 323, thereby achieving both electrical and mechanical connections between the substrate 340 and the first fan-out module 310 and the second fan-out module 320.

[0288] Here, "performed in different bonding steps" can be understood as follows: the bonding between the bridging chip 330 and the first line regions 312 and 322, and the bonding between the substrate 340 and the second line regions 313 and 323, are performed sequentially in stages during the manufacturing process, rather than being completed synchronously in the same bonding process. The different bonding steps can use the same or different bonding methods. For example, the first bonding step can use reflow soldering, thermoforming, or hybrid bonding, and the second bonding step can also use reflow soldering, thermoforming, or hybrid bonding. This application does not limit the two bonding steps to using different equipment, different temperature conditions, or different bonding mechanisms, as long as they are performed separately in the process timing.

[0289] By employing the step-by-step bonding method described above, the small-pitch connection corresponding to the bridging chip 330 and the large-pitch connection corresponding to the substrate 340 can be decoupled. Specifically, the first connection structure 350 is typically used for high-density interconnects, with a smaller pitch, making it more sensitive to alignment accuracy, coplanarity, and thermal deformation; the second connection structure 360 ​​is typically used for substrate connections, with a larger pitch and relatively higher alignment tolerance. If the alignment and bonding of the first connection structure 350 and the second connection structure 360 ​​are completed simultaneously in the same bonding step, the different alignment requirements of the small-pitch and large-pitch connection structures must be met simultaneously, resulting in a narrower process window, and the thermal expansion difference between the fan-out module and the substrate 340 can easily cause the small-pitch connection area to shift.

[0290] In this embodiment, a first bonding step is first performed between the bridging chip 330 and the first line regions 312 and 322, so that the high-density interconnect regions are connected under the support of the first carrier board 460. Then, a second bonding step is performed between the substrate 340 and the second line regions 313 and 323, so that the substrate 340 is mainly aligned and bonded with the connection regions with relatively large spacing. Therefore, in the second bonding step, it is no longer necessary to simultaneously complete the initial alignment and bonding of the small spacing connection structure corresponding to the bridging chip 330, thereby reducing the alignment burden during the assembly stage of the substrate 340.

[0291] Furthermore, since the bridging chip 330 has already been fixed and electrically connected to the first fan-out module 310 and the second fan-out module 320 in the first bonding step, the relative position between the bridging chip 330 and the first line areas 312 and 322 is mainly determined by the structure on the fan-out module side, and no longer relies on the bridging structure on the substrate 340 side for alignment. Therefore, in the second bonding step, even if the substrate 340 deforms due to thermal expansion, cooling contraction, or warping, it is not easy to directly destroy the high-density bonding relationship already formed between the bridging chip 330 and the first line areas 312 and 322.

[0292] Therefore, by performing the bonding steps of the bridging chip 330 with the first line area of ​​at least two fan-out modules and the bonding steps of the substrate 340 with the second line area of ​​at least two fan-out modules in different bonding steps, this embodiment can avoid the synchronous alignment of small-pitch connection structures and large-pitch connection structures in the same bonding step, thereby expanding the process window, reducing the alignment difficulty of mixed-pitch connections, and improving the bonding reliability of high-density interconnects between the bridging chip 330 and the fan-out modules.

[0293] The above manufacturing method can solve the technical problem of high bonding difficulty caused by the need for simultaneous alignment of small-pitch and large-pitch connection structures in the same bonding process in traditional processes. Specifically, the first connection structure 350 between the bridging chip 330 and the first line areas 312 and 322 has a small pitch and is usually used for high-density signal transmission, requiring high alignment accuracy; the second connection structure 360 ​​between the substrate 340 and the second line areas 313 and 323 has a large pitch and is usually used for the connection between the fan-out module and the substrate 340. If the two are aligned simultaneously in the same bonding step, the different alignment requirements of the small-pitch and large-pitch connection structures must be met simultaneously, resulting in a narrow process window.

[0294] In this embodiment, the bridging chip 330 is first connected to the first line areas 312 and 322 while the first carrier board 460 is in a supporting state, and then the substrate 340 is connected to the second line areas 313 and 323. Since the high-density connection step of the bridging chip 330 is completed before the substrate 340 is assembled, it is no longer necessary to simultaneously align the small-pitch connection structure corresponding to the bridging chip 330 and the large-pitch connection structure corresponding to the substrate 340 during the subsequent assembly of the substrate 340. This reduces the difficulty of synchronously aligning the mixed-pitch connection structures.

[0295] Furthermore, since the bridging chip 330 is disposed on the fan-out module side before the substrate 340 is assembled, the relative position between the bridging chip 330 and the first line areas 312 and 322 is mainly determined by the structure of the fan-out module side supported by the first carrier board 460, rather than by the structure of the substrate 340 side. Therefore, thermal expansion, contraction, or warping of the substrate 340 during subsequent assembly, heating, cooling, or stress is unlikely to directly affect the high-density connection relationship already formed between the bridging chip 330 and the first line areas 312 and 322. This reduces the risk of misalignment or abnormal bonding of the bridging chip 330 due to deformation of the substrate 340.

[0296] Furthermore, since at least two fan-out modules are supported on the first carrier plate 460 during the placement of the bridging chip 330 and the assembly substrate 340, the first carrier plate 460 can provide mechanical support for the fan-out modules during the relevant processes. Thus, even when the first fan-out module 310 and the second fan-out module 320 are arranged separately or side-by-side, the placement of the bridging chip 330 and the subsequent assembly of the substrate 340 can be completed relatively stably under the support of the first carrier plate 460, thereby improving the processing stability during manufacturing.

[0297] Therefore, this embodiment first provides at least two fan-out modules carried on the first carrier board 460, then places the bridging chip 330 on one side of the at least two fan-out modules and electrically connects it to the first line areas 312 and 322 through the first connection structure 350 with a smaller arrangement spacing, and then assembles the substrate 340 to one side of the at least two fan-out modules and electrically connects it to the second line areas 313 and 323 through the second connection structure 360 ​​with a larger arrangement spacing. This allows the high-density bridging connection step and the substrate connection step to be completed in stages, thereby reducing the alignment difficulty, reducing the impact of substrate deformation on the high-density connection area of ​​the bridging chip 330, and improving the manufacturing yield and bonding reliability of the package structures 300A, 300B, 300C, or 300D.

[0298] Although this application has been described and illustrated with reference to specific embodiments thereof, such description and illustration are not limiting of this application. It will be readily understood by those skilled in the art that various changes can be made and equivalent elements can be substituted within embodiments without departing from the true spirit and scope of this application as defined by the appended claims. Illustrations may not be drawn to scale. Differences may exist between the technical representation in this application and actual implementation due to variables in the manufacturing process, etc. Other embodiments of this application may exist that are not specifically described. The description and illustrations should be considered illustrative rather than restrictive. Modifications can be made to adapt particular circumstances, materials, composition, methods, or processes to the objectives, spirit, and scope of this application. All such modifications fall within the scope of the appended claims. While the methods disclosed herein have been described with reference to specific operations performed in a particular order, it should be understood that these operations can be combined, subdivided, or reordered to form equivalent methods without departing from the teachings of this application. Therefore, unless specifically indicated herein, the order and grouping of operations do not limit this application.

Claims

1. A packaging structure, characterized in that, include: At least two fan-out modules, each fan-out module including a first line area and a second line area; A bridging chip is disposed on one side of the at least two fan-out modules and electrically connected to the first line area of ​​the at least two fan-out modules respectively through a plurality of first connection structures, so that the bridging chip is used to realize signal transmission between the at least two fan-out modules; as well as A substrate is disposed on one side of the at least two fan-out modules and is electrically connected to the second circuit area of ​​the at least two fan-out modules through a plurality of second connection structures; The spacing between the plurality of first connection structures is smaller than the spacing between the plurality of second connection structures, and the bridging chip is fixed to the at least two fan-out modules and spaced apart from the substrate.

2. The packaging structure according to claim 1, characterized in that, The first line area is a dense line area in the fan-out module used to realize high-density interconnection between modules, and the second line area is a sparse line area in the fan-out module used to make electrical connections with the substrate. The line density of the first line area is greater than the line density of the second line area.

3. The packaging structure according to claim 1, characterized in that, The bridging chip is positioned between two adjacent fan-out modules and is electrically connected to the first line area of ​​each of the two adjacent fan-out modules.

4. The packaging structure according to claim 1, characterized in that, The plurality of first connection structures include microbumps, and the plurality of second connection structures include at least one of C4 bumps, copper pillars, and solder bumps.

5. The packaging structure according to claim 1, characterized in that, The packaging structure further includes a first filling layer, which fills at least between the bridge chip and the at least two fan-out modules.

6. The packaging structure according to claim 5, characterized in that, The first filling layer includes at least one of underfill, molding material, and adhesive film. The at least two fan-out modules are arranged side by side, and there is a gap between adjacent fan-out modules. The first filling layer is also disposed in the gap between adjacent fan-out modules.

7. The packaging structure according to claim 1, characterized in that, The packaging structure further includes a second filling layer disposed between the substrate and the at least two fan-out modules, and at least partially covering the bridge chip.

8. The packaging structure according to claim 1, characterized in that, The substrate has a groove, and the bridging chip is at least partially housed within the groove.

9. The packaging structure according to claim 8, characterized in that, An underfill material or a molding compound is provided between the bridging chip and the inner wall of the groove.

10. The packaging structure according to claim 8, characterized in that, The bridging chip includes a connection surface facing the at least two fan-out modules and a back surface facing away from the connection surface, wherein a back protective film is provided on the back surface.

11. The packaging structure according to claim 10, characterized in that, The back protective film is an adhesive protective film and is located between the back of the bridging chip and the inner wall of the groove.

12. The packaging structure according to claim 1, characterized in that, The bridging chip is electrically connected to the first line area of ​​at least one of the at least two fan-out modules via a hybrid bonding structure.

13. The packaging structure according to claim 1, characterized in that, The substrate is electrically connected to the second circuit area of ​​at least one of the at least two fan-out modules via a hybrid bonding structure.

14. The packaging structure according to claim 1, characterized in that, At least one of the at least two fan-out modules includes an input / output chip.

15. The packaging structure according to claim 14, characterized in that, The input / output chip is signal-connected to the bridge chip through the first line area and to the substrate through the second line area.

16. The packaging structure according to claim 14, characterized in that, The at least one fan-out module includes an intermediary layer, which is disposed on the signal transmission path between the input / output chip and the bridge chip.

17. The packaging structure according to claim 16, characterized in that, The intermediary layer includes an intermediary structure, through which the input / output chip is signal-connected to the bridge chip.

18. A method for manufacturing a packaging structure, characterized in that, include: At least two fan-out modules are provided on a first carrier board, each of the at least two fan-out modules including a first line area and a second line area; A bridging chip is disposed on one side of the at least two fan-out modules, and the bridging chip is electrically connected to the first line area of ​​the at least two fan-out modules respectively through multiple first connection structures, so that the bridging chip is used to realize signal transmission between the at least two fan-out modules; as well as The substrate is assembled to one side of the at least two fan-out modules, and the substrate is electrically connected to the second circuit area of ​​the at least two fan-out modules through a plurality of second connection structures; The spacing between the plurality of first connection structures is smaller than the spacing between the plurality of second connection structures.

19. The method for manufacturing the packaging structure according to claim 18, characterized in that, The bonding step between the bridging chip and the first circuit area of ​​the at least two fan-out modules, and the bonding step between the substrate and the second circuit area of ​​the at least two fan-out modules, are performed in different bonding steps.

20. The method for manufacturing the packaging structure according to claim 18, characterized in that, During the assembly of the substrate to the at least two fan-out modules, a second filler material is filled between the substrate and the at least two fan-out modules, such that the bridging chip and the substrate are separated by the second filler material.

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