Organic compound, material for interlayer, and light-emitting device

Abstract

Provided is a novel organic compound capable of providing a light-emitting device with good reliability. An organic compound represented by the following structural formula (G1) is provided. Note that in the following general formula (G1), R1 to R6 are each independently any one of hydrogen (including deuterium), an alkyl group with 1 to 10 carbon atoms, a cycloalkyl group with 3 to 10 carbon atoms, an alkoxy group with 1 to 10 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, and a substituted or unsubstituted cyclic secondary amino group with 2 to 10 carbon atoms, A 1 or A 2 are each independently any one of an alkoxy group with 1 to 10 carbon atoms, a substituted or unsubstituted aryl group with 6 to 30 carbon atoms, and a substituted or unsubstituted cyclic secondary amino group with 2 to 10 carbon atoms.

Description

Technical Field

[0001] One aspect of the present invention relates to an organic compound, an organic semiconductor element, a light-emitting device, a photodiode sensor, a display module, a lighting module, a display device, an electronic device, a lighting device, and an electronic device. Note that this aspect of the present invention is not limited to the above-described technical fields. The technical field of one aspect of the invention disclosed in this specification relates to an object, method, or manufacturing method. Furthermore, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. Therefore, more specifically, as an example of the technical field of one aspect of the present invention disclosed in this specification, examples include semiconductor devices, display devices, liquid crystal display devices, lighting devices, energy storage devices, memory devices, imaging devices, methods for driving these devices, or methods for manufacturing these devices. Background Technology

[0002] The practical application of light-emitting devices (also known as organic EL elements) that utilize organic compounds and electroluminescence (EL) is very active. In the basic structure of these devices, an organic compound layer containing a luminescent material is sandwiched between a pair of electrodes. By applying a voltage to the device and injecting charge carriers, light emission from the luminescent material can be obtained using the recombination energy of these charge carriers.

[0003] Because the light-emitting device is self-emissive, display devices using this device offer higher visibility compared to liquid crystal displays (LCDs) and do not require a backlight. Furthermore, display devices using this type of device can be manufactured to be thin and lightweight, which is a significant advantage. Moreover, its extremely fast response time is also a key feature.

[0004] Furthermore, because the light-emitting layer of this type of light-emitting device can be formed continuously in a planar shape, surface light emission can be achieved. Since this is a feature that is difficult to obtain in point light sources such as incandescent lamps and LEDs, or line light sources such as fluorescent lamps, the above-mentioned light-emitting device is also highly valuable as a surface light source that can be used for lighting and other applications.

[0005] As mentioned above, although display devices and lighting devices using light-emitting devices are suitable for a wide variety of electronic devices, research and development of light-emitting devices with better characteristics is becoming increasingly active.

[0006] In addition, Patent Document 1 discloses a light-emitting device with low driving voltage and good reliability, which uses a hybrid film containing a transition metal and an organic compound with non-shared electron pairs as the electron injection layer.

[0007] [Preliminary Technology Documents] [Patent Literature] [Patent Document 1] Japanese Patent Application Publication No. 2018-201012. Summary of the Invention

[0008] The technical problem that the invention aims to solve Vacuum evaporation (VEA), using metal masks, is widely employed as one method for fabricating organic semiconductor films into specified shapes. However, in recent years, with advancements in density and resolution, the high resolution achieved through EEA has reached its limits due to various issues such as alignment accuracy and substrate-mask spacing. On the other hand, more dense patterns can be formed by processing the shape of organic semiconductor films using lithography. Furthermore, since the aforementioned methods are easily scalable to large areas, research has been conducted on the processing of organic semiconductor films using lithography. However, when processing organic semiconductor films using lithography, sometimes properties degrade and shape defects occur.

[0009] One objective of this invention is to provide a novel organic compound. Another objective of this invention is to provide a novel organic compound with electron transport properties. Furthermore, one objective of this invention is to provide a novel organic compound that can be used as an intermediate layer in a tandem light-emitting device. Additionally, one objective of this invention is to provide an organic compound that enables the fabrication of light-emitting devices with good performance, even when processed using lithography techniques.

[0010] One objective of this invention is to provide a light-emitting device with excellent performance. Furthermore, one objective of this invention is to provide a light-emitting device with high reliability. Additionally, one objective of this invention is to provide a light-emitting device with low driving voltage. Furthermore, one objective of this invention is to provide a light-emitting device with both high reliability and low driving voltage.

[0011] Furthermore, one objective of this invention is to provide a light-emitting device capable of providing a display device with good characteristics. Another objective of this invention is to provide a light-emitting device capable of manufacturing a display device with high reliability. Another objective of this invention is to provide a display device with low driving voltage. Furthermore, one objective of this invention is to provide a light-emitting device capable of providing both low driving voltage and high reliability in a display device.

[0012] Furthermore, one objective of this invention is to provide any one of a low-power organic semiconductor device, a light-emitting device, a light-receiving device, a display device, an electronic device, and a lighting device. Another objective of this invention is to provide any one of a highly reliable electronic device and a lighting device.

[0013] The present invention can achieve any one of the above objectives.

[0014] means of solving technical problems In addition, one aspect of the present invention is an organic compound represented by the following structural formula (G1).

[0015] [Chemical Formula 1] Note that in the above general formula (G1), R 1 To R 6 A is independently any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), and a cyclic secondary amino group having 2 to 10 carbon atoms (substituted or unsubstituted), respectively. 1 Or A 2 Each of the following is independently an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 substituted or unsubstituted carbon atoms, or a cyclic secondary amino group having 2 to 10 substituted or unsubstituted carbon atoms. Alternatively, the alkoxy group having 1 to 10 carbon atoms, the aryl group having 6 to 30 substituted or unsubstituted carbon atoms, or the cyclic secondary amino group having 2 to 10 substituted or unsubstituted carbon atoms can also be bonded to the quinoline [7,8-h]quinoline skeleton of the above general formula (G1) via an arylene group having 6 to 12 carbon atoms.

[0016] Alternatively, another aspect of the present invention is an organic compound represented by the following structural formula (G1).

[0017] [Chemical Formula 2] Note that in the above general formula (G1), R 1 To R 6 Each of the following is independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by the following general formula (g1-1), and a group represented by the following general formula (g1-2), A 1 Or A 2Each of the following groups can be independently an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a group represented by the following general formulas (g1-1) to (g1-3). Additionally, the alkoxy group having 1 to 10 carbon atoms and the substituted or unsubstituted aryl group having 6 to 30 carbon atoms can also be bonded to the quinoline [7,8-h]quinoline skeleton of the above general formula (G1) via an arylene group having 6 to 12 carbon atoms.

[0018] [Chemical Formula 3] Note that in the above general formulas (g1-1) to (g1-3), R 11 To R 18 R 21 To R 28 and R 31 To R 36 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 1 or α 2 Each of the following groups independently represents an aryl group with 6 to 12 carbon atoms, where n and m independently represent 0 or 1, k represents an integer from 0 to 3, and p and q independently represent integers from 0 to 2. Furthermore, in the above general formula (g1-3), A... 3 It is any one of an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g1-1), and a group represented by the above general formula (g1-2).

[0019] Alternatively, another aspect of the present invention is an organic compound represented by the following structural formula (G2).

[0020] [Chemical Formula 4] Note that in the above general formula (G2), R 1 To R 6 Each of the following groups is independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by the following general formula (g2-1), and a group represented by the following general formula (g2-2), R 41 To R 50Each of the following groups is independently hydrogen (including deuterium), an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms, substituted or unsubstituted, and a group represented by the following general formulas (g2-1) to (g2-3).

[0021] [Chemical Formula 5] Note that in the above general formulas (g2-1) to (g2-3), R 11 To R 18 R 21 To R 28 and R 31 To R 36 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 3 represents phenylene, and p and q independently represent integers from 0 to 2. Additionally, in the above general formula (g2-3), R... 51 To R 55 It is any one of an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g2-1), and a group represented by the above general formula (g2-2).

[0022] Alternatively, another aspect of the present invention is an organic compound represented by the following structural formula (G3).

[0023] [Chemical Formula 6] Note that in the above general formula (G3), R 1 To R 6 Each of the following groups is independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by the following general formula (g3-1), and a group represented by the following general formula (g3-2), R 41 To R 45 Each of the following is independently hydrogen (including deuterium), an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), and a group represented by the following general formulas (g3-1) to (g3-3). Additionally, A 2It is any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the following general formula (g3-1), and a group represented by the following general formula (g3-2).

[0024] [Chemical Formula 7] Note that in the above general formulas (g3-1) to (g3-3), R 11 To R 18 R 21 To R 28 and R 31 To R 36 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 3 denoted as phenylene, p and q independently represent integers from 0 to 2. Furthermore, in the above general formula (g3-3), A 3 It is any one of an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g1), and a group represented by the above general formula (g2).

[0025] Alternatively, another aspect of the present invention is an organic compound represented by the following general formula (G4).

[0026] [Chemical Formula 8] Note that in the above general formula (G4), R 1 To R 6 Each of the following can be independently represented: hydrogen (including deuterium), alkyl group having 1 to 10 carbon atoms, cycloalkyl group having 3 to 10 carbon atoms, alkoxy group having 1 to 10 carbon atoms, or aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted.

[0027] Alternatively, another aspect of the present invention is an organic compound represented by the following general formula (G5).

[0028] [Chemical Formula 9] Note that in the above general formula (G5), R 1 To R 6Each of the following can be independently represented: hydrogen (including deuterium), alkyl group having 1 to 10 carbon atoms, cycloalkyl group having 3 to 10 carbon atoms, alkoxy group having 1 to 10 carbon atoms, or aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted.

[0029] Alternatively, another aspect of the present invention is an organic compound represented by the following general formula (G6).

[0030] [Chemical Formula 10] Note that in the above general formula (G6), R 1 To R 6 Each of the following can be independently represented: hydrogen (including deuterium), alkyl group having 1 to 10 carbon atoms, cycloalkyl group having 3 to 10 carbon atoms, alkoxy group having 1 to 10 carbon atoms, or aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted.

[0031] Alternatively, another aspect of the present invention is an organic compound represented by the following general formula (G7).

[0032] [Chemical Formula 11] Note that in the above general formula (G7), A 1 Or A 2 Each of the following groups can be independently an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a group represented by the following general formulas (g1-1) to (g1-3). Additionally, the alkoxy group having 1 to 10 carbon atoms and the substituted or unsubstituted aryl group having 6 to 30 carbon atoms can also be bonded to the quinoline [7,8-h]quinoline skeleton of the above general formula (G7) via an arylene group having 6 to 12 carbon atoms.

[0033] [Chemical Formula 12] Note that in the above general formulas (g1-1) to (g1-3), R 11 To R 18 R 21 To R 28 and R 31 To R 36 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 1 or α 2Each of the following groups independently represents an aryl group with 6 to 12 carbon atoms, where n and m independently represent 0 or 1, k represents an integer from 0 to 3, and p and q independently represent integers from 0 to 2. Furthermore, in the above general formula (g1-3), A... 3 It is any one of an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g1-1), and a group represented by the above general formula (g1-2).

[0034] Another aspect of the present invention is a material for the intermediate layer of a tandem light-emitting device comprising any one of the organic compounds represented by the above general formulas (G1) to (G7).

[0035] Another aspect of the present invention is the use of an organic compound represented by any of the above general formulas (G1) to (G7) in a tandem light-emitting device with an intermediate layer.

[0036] Another aspect of the present invention is a series-type light-emitting device that uses an organic compound represented by any of the above general formulas (G1) to (G7) and a metal or metal compound in the intermediate layer.

[0037] Another aspect of the present invention is a tandem light-emitting device in which an organic compound represented by any of the above general formulas (G1) to (G7) and an organic compound having a phenanthroline skeleton are used in the intermediate layer.

[0038] Another aspect of the present invention is a series-type light-emitting device comprising an organic compound represented by any one of the above general formulas (G1) to (G7), an organic compound having a phenanthroline skeleton, and an intermediate layer of a metal or metal compound.

[0039] Another aspect of the present invention is a material for the electron injection layer of a light-emitting device comprising an organic compound represented by any one of the above general formulas (G1) to (G7).

[0040] Another aspect of the present invention is a light-emitting device that uses an organic compound represented by any of the above general formulas (G1) to (G7) in the electron injection layer.

[0041] Another aspect of the present invention is a light-emitting device that uses an organic compound represented by any of the above general formulas (G1) to (G7) and a metal or metal compound in the electron injection layer.

[0042] Another aspect of the present invention is a light-emitting device that uses an organic compound represented by any of the above general formulas (G1) to (G7) and an organic compound having a phenanthroline skeleton in an electron injection layer.

[0043] Another aspect of the present invention is a light-emitting device comprising an electron-injection layer containing an organic compound represented by any one of the above general formulas (G1) to (G7), an organic compound having a phenanthroline skeleton, and a metal or metal compound.

[0044] Another aspect of the present invention is a display device that includes any of the light-emitting devices described above.

[0045] Another aspect of the present invention is an electronic device that includes the aforementioned light-emitting device, as well as a sensor, operation button, speaker, or microphone.

[0046] Another aspect of the present invention is a lighting device including the above-described light-emitting device and frame.

[0047] Invention Effects According to one aspect of the present invention, a novel organic compound can be provided. Furthermore, according to one aspect of the present invention, a novel organic compound with electron transport properties can be provided. Furthermore, according to one aspect of the present invention, a novel organic compound can be provided that can be used as an intermediate layer in a tandem light-emitting device. Furthermore, according to one aspect of the present invention, an organic compound can be provided that enables the manufacture of light-emitting devices with good performance even when processed using lithography.

[0048] Furthermore, according to one aspect of the present invention, a light-emitting device with excellent characteristics can be provided. Furthermore, according to one aspect of the present invention, a light-emitting device with high reliability can be provided. Furthermore, according to one aspect of the present invention, a light-emitting device with low driving voltage can be provided. Furthermore, according to one aspect of the present invention, a light-emitting device with both high reliability and low driving voltage can be provided.

[0049] Furthermore, according to one aspect of the present invention, a light-emitting device capable of providing a display device with good characteristics can be provided. Furthermore, according to one aspect of the present invention, a light-emitting device capable of providing a display device with good reliability can be provided. Furthermore, according to one aspect of the present invention, a display device with low driving voltage can be provided. Furthermore, according to one aspect of the present invention, a display device with both low driving voltage and good reliability can be provided.

[0050] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the invention does not necessarily require all of the above-described effects. Note that effects other than those described above can be understood and extracted from the description, drawings, claims, etc. Attached Figure Description

[0051] Figures 1A to 1C This is a schematic diagram of a light-emitting device according to one aspect of the present invention.

[0052] Figure 2A and Figure 2B This is a diagram illustrating a display device according to one aspect of the present invention.

[0053] Figure 3A and Figure 3B This is a diagram illustrating a display device according to one aspect of the present invention.

[0054] Figures 4A to 4E This is a cross-sectional view illustrating an example of a manufacturing method for a display device.

[0055] Figure 5A and Figure 5B This is a cross-sectional view illustrating an example of a manufacturing method for a display device.

[0056] Figures 6A to 6D This is a cross-sectional view illustrating an example of a manufacturing method for a display device.

[0057] Figures 7A to 7C This is a cross-sectional view illustrating an example of a manufacturing method for a display device.

[0058] Figures 8A to 8C This is a cross-sectional view illustrating an example of a manufacturing method for a display device.

[0059] Figures 9A to 9C This is a cross-sectional view illustrating an example of a manufacturing method for a display device.

[0060] Figure 10A and Figure 10B This is a perspective view showing an example of the structure of a display module.

[0061] Figure 11A and Figure 11B This is a cross-sectional view showing an example of the structure of a display device.

[0062] Figure 12 This is a perspective view showing an example of the structure of a display device.

[0063] Figure 13 This is a cross-sectional view showing an example of the structure of a display device.

[0064] Figure 14 This is a cross-sectional view showing an example of the structure of a display device.

[0065] Figure 15A This is a cross-sectional view showing an example of the structure of a display device. Figure 15B and Figure 15C This is a top view showing an example of the structure of a display device.

[0066] Figure 16 This is a cross-sectional view showing an example of the structure of a display device.

[0067] Figure 17A This is a cross-sectional view showing an example of the structure of a display device. Figure 17B and Figure 17C This is a top view showing an example of the structure of a display device.

[0068] Figures 18A to 18D This is a diagram illustrating an example of a wearable device.

[0069] Figures 19A to 19F This is a diagram illustrating an example of an electronic device.

[0070] Figures 20A to 20G This is a diagram illustrating an example of an electronic device.

[0071] Figure 21A and Figure 21B This shows P2Ququ. 1 The 1H NMR spectrum.

[0072] Figure 22A and Figure 22B It shows βN2Ququ 1 The 1H NMR spectrum.

[0073] Figures 23A to 23C It shows Prd2Ququ 1 The 1H NMR spectrum.

[0074] Figure 24 This is a diagram showing the brightness-current density characteristics of light-emitting devices 1-1 and 1-2.

[0075] Figure 25 This is a graph showing the current efficiency-brightness characteristics of light-emitting devices 1-1 and 1-2.

[0076] Figure 26 This is a graph showing the current density-voltage characteristics of light-emitting devices 1-1 and 1-2.

[0077] Figure 27 This is a diagram showing the electroluminescence spectra of light-emitting devices 1-1 and 1-2.

[0078] Figure 28 This is a diagram showing the brightness-current density characteristics of light-emitting devices 2-1 and 2-2.

[0079] Figure 29 This is a graph showing the current efficiency-brightness characteristics of light-emitting devices 2-1 and 2-2.

[0080] Figure 30 This is a graph showing the current density-voltage characteristics of light-emitting devices 2-1 and 2-2.

[0081] Figure 31 This is a diagram showing the electroluminescence spectra of light-emitting devices 2-1 and 2-2.

[0082] Figure 32 This is a graph showing the light-emitting device 3 and comparing the brightness-current density characteristics of the light-emitting device 3.

[0083] Figure 33 This is a diagram showing the light-emitting device 3 and comparing the brightness-voltage characteristics of the light-emitting device 3.

[0084] Figure 34 This is a graph showing the light-emitting device 3 and comparing the current efficiency-current density characteristics of the light-emitting device 3.

[0085] Figure 35 This is a graph showing the light-emitting device 3 and comparing the current density-voltage characteristics of the light-emitting device 3.

[0086] Figure 36 This is a diagram showing the electroluminescent spectrum of light-emitting device 3 and a comparison of the electroluminescent spectrum of light-emitting device 3. Detailed Implementation

[0087] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily understand that its methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as being limited to the contents described in the embodiments shown below.

[0088] In this specification, ordinal numbers such as "first" and "second" are used for convenience, but they do not limit the number of constituent elements or their order. The order of constituent elements may include, for example, a process sequence or a stacking sequence. That is, the ordinal numbers used in the embodiments of this specification may differ from those used in the claims. Furthermore, the ordinal numbers used in the embodiments of this specification may differ from those used in the claims.

[0089] Furthermore, in this specification, photoluminescence (PL) spectroscopy refers to the spectrum obtained by fixing the excitation wavelength of the excitation light and measuring the emission wavelength in fluorophotometry. It is sometimes also called emission spectrum. Note that emission spectrum sometimes includes both fluorescent and phosphorescent components. In this specification, emission spectra consisting of fluorescent components are sometimes specifically referred to as fluorescence spectra, and emission spectra consisting of phosphorescent components are sometimes specifically referred to as phosphorescence spectra.

[0090] Note that in this specification, etc., devices manufactured using metal masks or FMM (Fine Metal Mask) are sometimes referred to as devices with MM (Metal Mask) structures. Furthermore, in this specification, etc., devices manufactured without metal masks or FMM are sometimes referred to as devices with MML (Metal Mask Less) structures.

[0091] (Implementation Method 1) One aspect of the present invention is an organic compound having a quinoline [7,8-h]quinoline skeleton, represented by the following general formula (G1).

[0092] [Chemical Formula 13] Note that in the above general formula (G1), A 1 and A 2 Each of the following is independently an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), and a cyclic secondary amino group having 2 to 10 carbon atoms (substituted or unsubstituted).

[0093] Note that alkoxy groups with 1 to 10 carbon atoms, aryl groups with 6 to 30 carbon atoms (substituted or unsubstituted), and cyclic secondary amino groups with 2 to 10 carbon atoms (substituted or unsubstituted) can also be bonded to the above-mentioned quinoline [7,8-h]quinoline skeleton via arylene groups with 6 to 12 carbon atoms.

[0094] Organic compounds represented by the above general formula (G1) can be organic compounds with good electron transport properties.

[0095] Furthermore, in organic compounds represented by the above general formula (G1), since the two nitrogen atoms of the quinoline [7,8-h]quinoline skeleton are positioned close to each other, the electron density of the nitrogen atoms can be increased through the synergistic effect of the two non-shared electron pairs when the lone pairs of adjacent nitrogen atoms overlap. Therefore, when mixing organic compounds represented by general formula (G1) with metals or metal compounds, a strong bond is formed by the chelation of the two nitrogen atoms of the quinoline [7,8-h]quinoline skeleton.

[0096] Furthermore, organic compounds represented by the general formula (G1) have high electron density and therefore exhibit high basicity. Additionally, when the two nitrogen atoms of the quinoline [7,8-h]quinoline skeleton are combined with protons (hydrogen cations, H...) + The stability is significantly improved upon chelation, and the aforementioned organic compounds possess the property of not releasing protons once they are captured, thus potentially proving useful as strong organic bases. For example, when trace amounts of acid in the system hinder organic reactions in organic synthesis, it may be useful to increase reaction efficiency by adding an organic compound represented by the general formula (G1). Additionally, it is possible to use organic compounds represented by the general formula (G1) to extract protons from highly acidic matrices.

[0097] Furthermore, the organic compound represented by the above general formula (G1) does not have substituents at positions 2 and 11, thus not hindering the coordination of nitrogen atoms at positions 1 and 12 to the metal or metal compound. Therefore, when the organic compound represented by general formula (G1) is mixed with a metal or metal compound, electrons are supplied from the nitrogen atom of the quinoline [7,8-h]quinoline skeleton to the metal to form a coordinate bond, thereby increasing the electron density of the metal or metal compound. Since the increased charge density enhances the function of the metal or metal compound as an electron donor, it is suitable for use as an N-type layer in the intermediate layer of a tandem light-emitting device. Thus, the organic compound represented by general formula (G1) is suitable as a material for constituting the N-type layer in the intermediate layer of a tandem light-emitting device.

[0098] Furthermore, when A atoms bonded at positions 4 and 9 in organic compounds represented by the above general formula (G1) 1 and A 2 When the electron density of the quinoline [7,8-h]quinoline skeleton is increased, it can be achieved by independently selecting any one of an alkoxy group with 1 to 10 carbon atoms, an aryl group with 6 to 30 carbon atoms (substituted or unsubstituted), or a cyclic secondary amino group with 2 to 10 carbon atoms (substituted or unsubstituted). As a result, the electron-donating ability for the aforementioned metal or metal compound is improved, allowing for the formation of more stable coordination bonds, thereby further enhancing the electron-donating ability of the metal or metal compound.

[0099] Note that when the number of rings in a cyclic secondary amino group is 5 or less, the electron density of the nitrogen atom contained in the cyclic secondary amino group is increased, which can improve electron donation.

[0100] Additionally, R 1 To R 6 Each of the following is independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), and a cyclic secondary amino group having 2 to 10 carbon atoms (substituted or unsubstituted).

[0101] In addition, alkoxy groups with 1 to 10 carbon atoms, aryl groups with 6 to 30 carbon atoms (substituted or unsubstituted), and cyclic secondary amino groups with 2 to 10 carbon atoms (substituted or unsubstituted) can also be bonded to the quinoline [7,8-h]quinoline skeleton of the above general formula (G1) via arylene groups with 6 to 12 carbon atoms.

[0102] Additionally, in A 1 and A 2 In the case of a cyclic secondary amino group having 2 to 10 substituted or unsubstituted carbon atoms, A 1 and A 2 The preferred base is one represented by the following general formula (g1-1) or general formula (g1-2), because this improves electron supply and the raw materials are commercially available and easy to synthesize.

[0103] [Chemical Formula 14] Note that in the above general formulas (g1-1) and (g1-2), R 11 To R 18 and R 21 To R 28 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 1 This represents an aryl group with 6 to 12 carbon atoms, where n represents 0 or 1, k represents an integer from 0 to 3, and p and q independently represent integers from 0 to 2. Additionally, R... 11 To R 18 and R 21 To R 28 Hydrogen is preferred because it is easier to synthesize, α 1 Phenylidene is preferred and n is preferred to be 1, because it can improve electron supply and glass transition temperature; p and q are preferred to be 1, because they can improve electron supply; and k is preferred to be 3, because it can improve glass transition temperature.

[0104] Additionally, in A 1 and A 2 One of them is represented by the following general formula (g1-3), which can increase the glass transition temperature, so it is preferred.

[0105] [Chemical Formula 15] In the general formula (g1-3), R 31 To R 36Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 2 This represents an aryl group with 6 to 12 carbon atoms, where m represents 0 or 1. Additionally, in the above general formula (g1-3), A... 3 It is any one of the following: an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g1-1), and a group represented by the above general formula (g1-2). Additionally, R 31 To R 36 Hydrogen is preferred because it is easier to synthesize, α 2 Phenylidene is preferred and m is preferably 1, because it can suppress the sublimation temperature from becoming too high.

[0106] Furthermore, when A is present in an organic compound represented by the above general formula (G1) 1 and / or A 2 When an alkoxy group with 1 to 10 carbon atoms, an aryl group with 6 to 30 carbon atoms (substituted or unsubstituted), and a cyclic secondary amino group with 2 to 10 carbon atoms (substituted or unsubstituted) are bonded to the quinoline [7,8-h]quinoline skeleton via an arylene group with 6 to 12 carbon atoms, the heat resistance is improved, and therefore it is preferred.

[0107] That is, the organic compound of one aspect of the present invention is preferably an organic compound represented by the following general formula (G2).

[0108] [Chemical Formula 16] Note that in the above general formula (G2), R 41 To R 50 Each of the following is independently hydrogen (including deuterium), an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), and a group represented by the following general formulas (g2-1) to (g2-3). Additionally, in R... 41 To R 50 When a group is represented by the following general formula (g2-3), it is preferred to have one such group, because it can prevent the sublimation temperature from becoming too high.

[0109] [Chemical Formula 17] Note that in the above general formulas (g2-1) to (g2-3), R 11 To R 18 R 21 To R 28 and R 31To R 36 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 3 represents phenylene, and p and q independently represent integers from 0 to 2. Additionally, in the above general formula (g2-3), R... 51 To R 55 It is any one of the following: an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g2-1), and a group represented by the above general formula (g2-2). Additionally, R 11 To R 18 R 21 To R 28 and R 31 To R 36 Hydrogen is preferred because it is easier to synthesize, α 1 and α 2 Phenylidene is preferred, and p and q are preferably 1 because they can improve electron supply, and k is preferably 3 because it can increase the glass transition temperature.

[0110] Additionally, R 1 To R 6 Each of the following is independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by the above general formula (g1-1), a group represented by the above general formula (g1-2), a group represented by the following general formula (g2-1), and a group represented by the following general formula (g2-2), R 1 To R 6 Hydrogen is preferred because it is easier to synthesize.

[0111] Note that when A is in an organic compound represented by the above general formula (G1), 1 and A 2 When the same substituents are used, the synthesis cost is low, so it is preferred.

[0112] Furthermore, when A is present in an organic compound represented by the above general formula (G1) 1 and A 2 With different substituents, the basicity can be adjusted to any strength, making it a preferred choice. Especially in A 1 and A 2 In a structure where one component has a phenylene oxide and the other does not, the basicity can be adjusted to any strength, making it a preferred option.

[0113] That is, the organic compound of one aspect of the present invention is preferably an organic compound represented by the following general formula (G3).

[0114] [Chemical Formula 18] Note that in the above general formula (G3), R 41 To R 45 Each of the following is independently hydrogen (including deuterium), an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), and a group represented by the following general formulas (g3-1) to (g3-3). Additionally, A 2 It is any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the following general formula (g3-1), and a group represented by the following general formula (g3-2).

[0115] [Chemical Formula 19] Note that in the above general formulas (g3-1) to (g3-3), R 11 To R 18 R 21 To R 28 and R 31 To R 36 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α... 3 denoted as phenylene, p and q independently represent integers from 0 to 2. Furthermore, in the above general formula (g3-3), A 3 It is any one of the following: an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g3-1), and a group represented by the above general formula (g3-2). Additionally, R 11 To R 18 R 21 To R 28 and R 31 To R 36 Hydrogen is preferred because it is easier to synthesize, α 3 Phenylidene is preferred because it can increase the glass transition temperature; p and q are preferably 1 because they can increase electron supply; and k is preferably 3 because it can increase the glass transition temperature.

[0116] Furthermore, in the above general formula (G3), R 1 To R6 Each of the following groups is independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by the following general formula (g3-1), and a group represented by the following general formula (g3-2), R 1 To R 6 Hydrogen is preferred because it is easier to synthesize.

[0117] Additionally, when A in the above general formula (G1) 1 and A 2 The presence of a phenyl group can improve electron transport properties, and is therefore preferred. In other words, one preferred embodiment of the present invention is an organic compound represented by the following general formula (G4).

[0118] [Chemical Formula 20] Note that in the above general formula (G4), R 1 To R 6 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 30 carbon atoms. Additionally, in R... 1 To R 6 When both are hydrogen, the synthesis is easier, so it is the preferred choice.

[0119] Additionally, when A in the above general formula (G1) 1 and A 2 When the compound is naphthyl, especially naphth-2-yl, electron transport can be improved. Furthermore, the glass transition temperature can be increased, making it preferred. That is, one embodiment of the invention is preferably an organic compound represented by the following general formula (G5).

[0120] [Chemical Formula 21] Note that in the above general formula (G5), R 1 To R 6 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 30 carbon atoms. Additionally, in R... 1 To R 6 When both are hydrogen, the synthesis is easier, so it is the preferred choice.

[0121] Additionally, when A in the above general formula (G1) 1 and A 2When the compound is pyrrolidinyl, especially 1-pyrrolidinyl, it can improve electron-donating properties, thereby enabling chelation and stabilization with metals or protons, and is therefore preferred. In other words, one preferred embodiment of the invention is an organic compound represented by the following general formula (G6).

[0122] [Chemical Formula 22] Note that in the above general formula (G6), R 1 To R 6 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 30 carbon atoms. Additionally, in R... 1 To R 6 When both are hydrogen, the synthesis is easier, so it is the preferred choice.

[0123] Additionally, as mentioned above, in R 1 To R 6 When all components are hydrogen, the synthesis is easier, and therefore preferred. That is, the organic compound of one aspect of the present invention is preferably an organic compound represented by the following general formula (G7).

[0124] [Chemical Formula 23] Note that in the above general formula (G7), A 1 Or A 2 Each of the following groups can be independently an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a group represented by the following general formulas (g1-1) to (g1-3). Additionally, the alkoxy group having 1 to 10 carbon atoms and the substituted or unsubstituted aryl group having 6 to 30 carbon atoms can also be bonded to the quinoline [7,8-h]quinoline skeleton of the above general formula (G7) via an arylene group having 6 to 12 carbon atoms.

[0125] [Chemical Formula 24] Note that in the above general formulas (g1-1) to (g1-3), R 11 To R 18 R 21 To R 28 and R 31 To R 36 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Additionally, α...1 or α 2 Each of the following groups independently represents an aryl group with 6 to 12 carbon atoms, where n and m independently represent 0 or 1, k represents an integer from 0 to 3, and p and q independently represent integers from 0 to 2. Furthermore, in the above general formula (g1-3), A... 3 It is any one of the following: an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), a group represented by the above general formula (g1-1), and a group represented by the above general formula (g1-2). Additionally, R 11 To R 18 R 21 To R 28 and R 31 To R 36 Hydrogen is preferred because it is easier to synthesize, α 1 and α 2 Phenylidene is preferred, and n and m are preferably 1 because they can improve electron supply and glass transition temperature; p and q are preferably 1 because they can improve electron supply; and k is preferably 3 because it can improve glass transition temperature.

[0126] In the above general formulas (G1) to (G7), alkyl groups having 1 to 10 carbon atoms can be exemplified by, for example, methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, hexyl, isohexyl, heptyl, octyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, 2-ethylhexyl, 1-ethylpropyl, heptyl, octyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, nonyl, 3,7-dimethyl-1-octyl, 3,7-dimethyl-2-octyl, decyl, etc.

[0127] In the above general formulas (G1) to (G7), the cycloalkyl group having 3 to 10 carbon atoms, whether substituted or unsubstituted, can be exemplified by cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, 1-methylcyclohexyl, cycloheptyl, 1-adamantyl, and 2-adamantyl.

[0128] In the above general formulas (G1) to (G7), examples of alkoxy groups having 1 to 10 carbon atoms include methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, isobutoxy, tert-butoxy, n-pentoxy, isopentoxy, sec-pentoxy, tert-pentoxy, neopentoxy, n-hexyloxy, isohexyloxy, sec-hexyloxy, tert-hexyloxy, neohexyloxy, and cyclohexyloxy.

[0129] In the above general formulas (G1) to (G6), examples of aryl groups having 6 to 30 carbon atoms as substituted or unsubstituted groups include phenyl, o-tolyl, m-tolyl, p-tolyl, mesitylelel, biphenyl-2-yl (o-biphenyl), biphenyl-3-yl (m-biphenyl), biphenyl-4-yl (p-biphenyl), 1-naphthyl, 2-naphthyl, phenylnaphthyl, naphthylphenyl, terphenyl, fluorenyl, 9,9-dimethylfluorenyl, tetraphenyl, spirodifluorenyl, phenanthrene, anthracenel, binatylphenyl, fluoranyl, and triphenylene. Note that when the aryl group having 6 to 30 carbon atoms has a substituent, examples of such substituents include alkyl groups having 1 to 4 carbon atoms, cycloalkyl groups having 3 to 6 carbon atoms, or aryl groups having 6 to 13 carbon atoms.

[0130] Furthermore, in the above general formula (G1), examples of arylene groups having 6 to 12 carbon atoms, whether substituted or unsubstituted, include phenylene, biphenyl-diyl, and naphthyl-diyl. When the arylene group having 6 to 12 carbon atoms has a substituent, examples of such substituents include alkyl groups having 1 to 4 carbon atoms, cycloalkyl groups having 3 to 6 carbon atoms, or aryl groups having 6 to 13 carbon atoms.

[0131] Furthermore, in the above general formula (G1), a cyclic secondary amino group with 2 to 10 carbon atoms, whether substituted or unsubstituted, represents a monovalent group formed by removing hydrogen from the nitrogen atom of a cyclic secondary amino group with 2 to 10 carbon atoms. Specific examples of cyclic secondary amino groups with 2 to 10 carbon atoms include pyrrolidin-1-yl, isoindol-2-yl, dihydroisoindol-2-yl, tetrahydroisoindol-2-yl, hexahydroisoindol-2-yl, hexahydroisoindololin-2-yl, piperidin-1-yl, aziridin-1-yl, azircyclobutane-1-yl, octahydrocyclopentane[c]pyrrole-2-yl, octahydro-4,7-bridged methylene(methano)-1H-isoindol-2-yl, 2-azabicyclo[3.1.0]hexane-2-yl, 3-azabicyclo[3.1.0]hexane-2-yl, 3-azabicyclo[3.2.0]heptane-2-yl, 5-azaspiro[3.4]octane-5-yl, and 8-azabicyclo[3.2.0]. [1] Octane-8-yl, 7-azabicyclo[2.2.1]heptane-7-yl, 5-azaspiro[2.4]heptane-5-yl, 5-azabicyclo[2.1.1]hexane-5-yl, etc. When the cyclic secondary amino group having 2 to 10 carbon atoms has a substituent, examples of such substituents include alkyl groups having 1 to 10 carbon atoms, cycloalkyl groups having 3 to 10 carbon atoms, alkoxy groups having 1 to 10 carbon atoms, and aryl groups having 6 to 30 carbon atoms, whether substituted or unsubstituted.

[0132] In the above general formula (G1), the cyclic secondary amino group having 2 to 10 carbon atoms as substituted or unsubstituted is preferably represented by the following general formula (g2-1) and the following general formula (g2-2) because it has high electron-donating properties.

[0133] [Chemical Formula 25] Note that in the above general formulas (g2-1) and (g2-2), R 11 To R 18 and R 21 To R 28 Each of the following can be independently represented: hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or an aryl group having 6 to 30 carbon atoms, whether substituted or unsubstituted. Furthermore, p and q can be independently represented: integers from 0 to 2.

[0134] As a cyclic secondary amino group having 2 to 10 carbon atoms, whether substituted or unsubstituted, it is preferred to use a group represented by the following structural formulas (A-1) to (A-10) because the raw materials are readily available.

[0135] [Chemical Formula 26] Organic compounds representing one aspect of the present invention as any of the above general formulas (G1) to (G7) can be exemplified by organic compounds represented by the following structural formulas (100) to (141).

[0136] [Chemical Formula 27] [Chemical Formula 28] [Chemical Formula 29] [Chemical Formula 30] [Chemical Formula 31] Next, as an example of an organic compound according to one aspect of the present invention, a method for synthesizing an organic compound represented by the following general formula (G1) will be described. Note that various reactions can be used as the synthesis method for general formula (G1), and it is not limited to the synthesis method described below.

[0137] [Chemical Formula 32] Note that in the above general formula (G1), R1 To R 6 A is independently any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms (substituted or unsubstituted), and a cyclic secondary amino group having 2 to 10 carbon atoms (substituted or unsubstituted), respectively. 1 Or A 2 Each of the following is independently an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 30 substituted or unsubstituted carbon atoms, or a cyclic secondary amino group having 2 to 10 substituted or unsubstituted carbon atoms. Alternatively, the alkoxy group having 1 to 10 carbon atoms, the aryl group having 6 to 30 substituted or unsubstituted carbon atoms, or the cyclic secondary amino group having 2 to 10 substituted or unsubstituted carbon atoms can also be bonded to the quinoline [7,8-h]quinoline skeleton of the above general formula (G1) via an arylene group having 6 to 12 carbon atoms.

[0138] As shown in the following synthetic scheme (A-1), an organic compound represented by the general formula (G1) of the present invention can be obtained by coupling a halogenated compound of a quinoline [7,8-h]quinoline derivative or a compound having a trifluoromethanesulfonate group (a1) with boric acid or amine to a compound (a2) formed by the Suzuki-Miyaura reaction. Note that in the following synthetic scheme (A-1), R 1 To R 6 A 1 and A 2 R in the above general formula 1 To R 6 A 1 and A 2 Since they are the same, repeated entries are omitted.

[0139] [Chemical Formula 33] In the above compound (a1), X 1 To X 2 At least one of them represents a halogen or trifluoromethanesulfonate group, and in the case of a halogen, chlorine, bromine, or iodine are particularly preferred. Alternatively, X 1 To X 2 They can also be independently classified as organoboron-based, boric acid-based, organotin-based, etc.

[0140] In the above compound (a2), X 3 This represents hydrogen or a boron hydroxyl group (-B(OH)₂). Additionally, in compound (a₂), it acts as X. 3 Borate esters or cyclic triol borates can also be used. Furthermore, as X 3 Chlorine, bromine, iodine, trifluoromethanesulfonate groups, etc. can also be used.

[0141] In the above compound (G1), A 1 and A 2 In the case of different substituents, it is preferable to set n to 1 and to make A in any order. 1 Or A 2 React separately.

[0142] In the coupling reaction represented by the above synthetic scheme, a palladium catalyst is preferably used. Examples of palladium catalysts include palladium(II) acetate, tetra(triphenylphosphine)palladium(O), and bis(triphenylphosphine)palladium(II) dichloride.

[0143] Examples of ligands for the aforementioned palladium catalysts include 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, (±)-2,2'-bis(diphenylphosphino)-1,1'-binathyl, tris(o-tolyl)phosphine, triphenylphosphine, and tricyclohexylphosphine.

[0144] Furthermore, in the coupling reaction represented by the above synthetic scheme, a base is preferably used. Examples of bases include organic bases such as potassium tert-butoxide, and inorganic bases such as tripotassium phosphate, potassium carbonate, and sodium carbonate.

[0145] Furthermore, in the coupling reaction represented by the above synthetic scheme, a solvent is preferably used. Examples of such solvents include toluene, xylene, mesitylene, benzene, tetrahydrofuran, and dioxane. Note that the solvents used are not limited to these.

[0146] Furthermore, the above synthetic scheme is described under the assumption that the Suzuki-Miyaura coupling reaction is mainly used. However, the reactions that can be used to synthesize organic compounds represented by the above general formula (G1) are not limited to the Suzuki-Miyaura coupling reaction. Other reactions that can be used include the Buchwald-Hartwig reaction, the Yuda-Kosugi-Stille coupling reaction using organotin compounds, coupling reactions using Grignard reagents, the Ullmann reaction using copper or copper compounds, nucleophilic substitution reactions, etc.

[0147] Through the above steps, a quinoline [7,8-h]quinoline compound of one embodiment of the present invention can be synthesized.

[0148] This implementation method can be used in any combination with other methods.

[0149] (Implementation Method 2) In this embodiment, a semiconductor device according to one aspect of the present invention is described in detail. Figure 1AThis is a diagram illustrating a light-emitting device according to one aspect of the present invention. The light-emitting device according to one aspect of the present invention includes an organic compound layer 103 formed on an insulating layer 1000 between a first electrode 101 and a second electrode 102 opposite to the first electrode. The organic compound layer 103 includes at least a light-emitting layer 113 and may also include other functional layers. Figure 1A and Figure 1B The example shown includes a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 (charge generation layer 116). It may also include an exciton blocking layer, an intermediate layer, etc. Note that sometimes the layer in the hole transport layer 112 that contacts the light-emitting layer 113 is specifically referred to as an electron blocking layer, and the layer in the electron transport layer 114 that contacts the light-emitting layer is specifically referred to as a hole blocking layer. In this embodiment, the case where the first electrode 101 is used as the anode and the second electrode 102 is used as the cathode is illustrated, and vice versa.

[0150] In one embodiment of the light-emitting device of the present invention, the organic compound layer 103 comprises an organic compound represented by any of the general formulas (G1) to (G7) in Embodiment 1. The organic compounds represented by any of the general formulas (G1) to (G7) possess electron transport properties, therefore, in Figure 1A and Figure 1B The light-emitting device shown preferably includes an electron transport layer 114, an electron injection layer 115, a charge generation layer 116, a hole blocking layer, a light-emitting layer 113, an intermediate layer, etc.

[0151] In particular, the organometallic compounds represented by any of the general formulas (G1) to (G7) form coordination bonds with metals or metal compounds, thereby enhancing the metal donor properties. Therefore, in Figure 1A and Figure 1B In the light-emitting device shown, the above-mentioned organic compound is preferably used together with a metal or metal compound in the electron injection layer 115, the charge generation layer 116 and the intermediate layer.

[0152] The electron injection layer 115, charge generation layer 116, and intermediate layer often use alkali metals or alkaline earth metals or their compounds (hereinafter also referred to as Li compounds, etc.). However, these Li compounds are highly reactive with water or oxygen, and when the organic compound layer 103 is exposed to the atmosphere, it deteriorates rapidly, leading to a significant decrease in its function. Therefore, although photolithography has been studied as a fabrication method for light-emitting devices using the organic compound layer 103, it is difficult to obtain light-emitting devices with good characteristics when using existing structures.

[0153] However, in the electron injection layer 115, charge generation layer 116, and intermediate layer comprising the organic compounds represented by general formulas (G1) to (G7) as shown in Embodiment 1, the donor properties of the metal or metal compound can be improved by coordinating the organic compound with the metal or metal compound. Therefore, even if the organic compound layer 103 is exposed to the atmospheric atmosphere, functional impairment of the electron injection layer 115, charge generation layer 116, and intermediate layer can be suppressed, thereby suppressing the rise in driving voltage and providing a light-emitting device with excellent characteristics.

[0154] In other words, even if the light-emitting device comprising an electron injection layer 115, a charge generation layer 116, and an intermediate layer of an organic compound and a metal or metal compound represented by any one of the general formulas (G1) to (G7) shown in Embodiment 1 is processed using photolithography, which includes an atmospheric exposure process, there is no significant increase in the driving voltage, and a light-emitting device with good characteristics can be realized.

[0155] Although this embodiment shows an example where the first electrode 101 is an electrode containing an anode, the second electrode 102 is an electrode containing a cathode, and the first electrode 101 is formed on one side of the insulator 1000, a structure in which the second electrode 102 is formed on one side of the insulator 1000 can also be used, i.e., a so-called reverse stacked structure. In this case, the light-emitting device has a structure in which the second electrode 102, the electron injection layer 115, the electron transport layer 114, the light-emitting layer 113 (including the hole transport layer 112 and the hole injection layer 111), and the first electrode 101 are stacked sequentially from the insulator 1000 side. When this reverse stacked structure is used in the light-emitting device, the relatively stable hole injection layer 111 becomes the surface, thereby enabling a light-emitting device with higher reliability.

[0156] Furthermore, the first electrode 101 and the second electrode 102 can also be formed as a single-layer structure or a multilayer structure. When a multilayer structure is present, the layer in contact with the organic compound layer 103 is used as an anode or a cathode. When the electrodes have a multilayer structure, there are no restrictions on the work function of the layers other than the layer in contact with the organic compound layer 103, and materials can be selected according to the required characteristics such as resistance, ease of processing, reflectivity, light transmittance, and stability.

[0157] The anode is preferably formed using metals, alloys, conductive compounds, and mixtures thereof with a high work function (specifically 4.0 eV or higher). Specifically, examples include indium tin oxide (ITO), indium tin oxide (ITSO) containing silicon or silicon oxide, indium zinc oxide, and indium oxide (IWZO) containing tungsten oxide and zinc oxide. While these conductive metal oxide films are typically deposited by sputtering, they can also be formed using sol-gel methods. As an example of a formation method, an indium oxide-zinc oxide method can be formed by sputtering using a target containing 1 wt% to 20 wt% zinc oxide of indium oxide. Furthermore, indium oxide (IWZO) containing tungsten oxide and zinc oxide can be formed by sputtering using a target containing 0.5 wt% to 5 wt% tungsten oxide and 0.1 wt% to 1 wt% zinc oxide of indium oxide. Furthermore, materials used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium (Ti), aluminum (Al), or nitrides of metallic materials (e.g., titanium nitride). The anode can also be a layer composed of the aforementioned materials stacked together. For example, a film sequentially stacked with Al, Ti, and ITSO on Ti exhibits good reflectivity, resulting in high efficiency and achieving high resolution of several thousand ppi, making it preferred. Graphene can also be used as a material for the anode. Additionally, by using a composite material that can constitute the hole injection layer 111 described later as the layer in contact with the anode (typically a hole injection layer), the work function can be disregarded when selecting the electrode material.

[0158] Hole injection layer 111 is in contact with the anode and functions to facilitate hole injection into organic compound layer 103. Hole injection layer 111 can be formed by using phthalocyanine compounds or complexes such as phthalocyanine (H2Pc), copper phthalocyanine (CuPc), etc.; aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (DNTPD), etc.; or polymers such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (PEDOT / PSS), etc.

[0159] Furthermore, the hole injection layer 111 can also be formed using a substance with electron-accepting properties. As such a substance, organic compounds with electron-withdrawing groups (halogen groups, cyano groups, etc.) can be used, including 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinone dimethyl ether (abbreviated: F4-TCNQ), chloroquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinone dimethyl ether (abbreviated: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-yl)malononitrile, etc. In particular, compounds such as HAT-CN, which have electron-withdrawing groups bonded to fused aromatic rings with multiple heteroatoms, are thermally stable and therefore preferred. Furthermore, [3] axylene derivatives having electron-withdrawing groups (especially halogen groups such as fluorine groups, cyano groups, etc.) are particularly preferred due to their very high electron acceptability. Specifically, examples include: α,α',α''-1,2,3-cyclopropanetrimethylenetri[4-cyano-2,3,5,6-tetrafluorophenylacetonitrile], α,α',α''-1,2,3-cyclopropanetrimethylenetri[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenylacetonitrile], α,α',α''-1,2,3-cyclopropanetrimethylenetri[2,3,4,5,6-pentafluorophenylacetonitrile], etc. In addition to the aforementioned organic compounds, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can also be used as acceptor substances. Furthermore, hole injection layers 111 can be formed by using phthalocyanine compounds or complexes such as phthalocyanine (H2Pc) and copper phthalocyanine (CuPc); aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (DPAB) and 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (DNTPD); or polymers such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (PEDOT / PSS). Acceptor substances can extract electrons from adjacent hole transport layers (or hole transport materials) by applying an electric field.

[0160] Furthermore, the hole injection layer 111 is preferably formed of a composite material comprising the aforementioned acceptor material and a hole transport substance.

[0161] Various organic compounds, such as aromatic amines, heteroaromatic compounds, aromatic hydrocarbons, and polymers (oligomers, dendritic polymers, polymers, etc.), can be used as hole-transporting materials for composite materials. Preferably, a hole mobility of 1×10⁻⁶ is used. -6 cm 2 Substances with a density of / Vs or higher. Substances with hole transport capabilities used in composite materials are preferably compounds having fused aromatic rings or π-electron-rich heteroaromatic rings. As fused aromatic rings, anthracene rings, naphthalene rings, etc., are preferred. Furthermore, as π-electron-rich heteroaromatic rings, fused aromatic rings having at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton are preferred, specifically carbazole rings, dibenzothiophene rings, or rings fused with these rings to aromatic rings or heteroaromatic rings.

[0162] More preferably, the hole-transporting material has any one of the following skeletons: carbazole skeleton, dibenzofuran skeleton, dibenzothiophene skeleton, and anthracene skeleton. In particular, it can be an aromatic amine having substituents including a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine including a naphthyl ring, or an aromatic monoamine in which a 9-fluorene group is bonded to the nitrogen of the amine via an arylene group. Note that when these hole-transporting materials are N,N-bis(4-biphenyl)amino groups, long-lifetime light-emitting devices can be manufactured, and therefore they are preferred.

[0163] Specifically, examples of substances with hole transport capabilities include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviated as: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviated as: BBABnf(6)), and N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviated as: BBABnf(6)). -d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-benzidine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-di Phenylacetyl-4''-(6;1'-binathyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binathyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binathyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binathyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binathyl) -1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-Bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl]tri(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirodi[9H-fluorene]-2-amine (abbreviation: PCB) NBSF), N,N-bis(biphenyl-4-yl)-9,9'-spirodi[9H-fluorene]-2-amine (abbreviated as: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirodi[9H-fluorene]-4-amine (abbreviated as: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi[9H-fluorene]-4-amine (abbreviated as: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviated as: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthalene 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as: BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluorene-9-yl)phenyl]triphenylamine (abbreviated as: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBA1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBANBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirodi[9H-fluorene]-2-amine (abbreviated as: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviated as: PCBiF), N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-3-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-2-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-1-amine, 9-[3-(triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviated as PSiCzCz), 9'-phenyl-9'H-9,3':6',9''-tricarbazole (abbreviated as PSiCzGI), etc.

[0164] In addition, as substances with hole transport capabilities, the following aromatic amine compounds can also be used: N,N'-bis(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviated as DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviated as DPA3B), etc.

[0165] By forming a hole injection layer 111, hole injection capability can be improved, thereby obtaining a light-emitting device with low driving voltage.

[0166] Furthermore, organic compounds with receptors can be easily deposited in substances with receptors using vapor deposition, making them easy-to-use materials.

[0167] The hole transport layer 112 is formed by comprising a material with hole transport properties. Preferably, the material with hole transport properties has a density of 1×10⁻⁶. -6 cm 2 Hole mobility above / Vs.

[0168] The hole transport layer 112 may have a single-layer structure or a multilayer structure, but the layer in contact with the light-emitting layer 113 has the structure described in Embodiment 1. Note that the repeated description of this structure is omitted.

[0169] When the hole transport layer 112 has a stacked structure, the layers other than the layer in contact with the light-emitting layer 113 may not have the structure shown in Embodiment 1. In the hole transport layer with a stacked structure, the layers other than the layer in contact with the light-emitting layer 113 are formed by containing a material with hole transport properties. As a material with hole transport properties, it is preferable to have a density of 1×10⁻⁶. - 6 cm 2 Hole mobility above / Vs.

[0170] Examples of substances with hole transport capabilities include: 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (TPD), N,N'-bis(9,9'-spirobis[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (PCBA1BP). Compounds with aromatic amine skeletons include 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCCNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirodi[9H-fluorene]-2-amine (abbreviation: PCBASF);1,3-Bis(N-carbazolyl)benzene (mCP), 4,4'-bis(N-carbazolyl)biphenyl (CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (mBPCCBP) 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviated as: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviated as: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviated as: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1”-triphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-triphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-triphenyl]-3-yl-3,3'-9H,9'H-bicarbazole [-Triphenyl]-3-yl-3,3'-9H,9'H-Bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-Triphenyl]-5'-yl-3,3'-9H,9'H-Bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1”-Triphenyl]-4-yl-3,3'-9H,9'H-Bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1”-Triphenyl]-4-yl-3,3'-9H,9'H-Bicarbazole, 9-(2-naphthyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-Bicarbazole, 9-phenyl-9'-(triphenyl-2-yl)-3,3'- Compounds with a carbazole skeleton, such as 9H,9'H-bicarbazole (abbreviated as PCCzTp), 9,9'-bis(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenyl-2-yl)-9'-[1,1':3',1”-triphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-1-amine, and 9-[3-(triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviated as PSiCzCz);Compounds with a thiophene skeleton, such as 4,4',4''-(benzyl-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), and 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV); and compounds with a furan skeleton, such as 4,4',4''-(benzyl-1,3,5-triyl)tris(dibenzofuran) (abbreviated as DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviated as mmDBFFLBi-II). Compounds with aromatic amine backbones and compounds with carbazole backbones are preferred due to their high reliability and excellent hole transport properties, which help reduce the driving voltage. Organic compounds with hole transport properties, which are also used as materials for the hole injection layer 111, can also be used as materials constituting the hole transport layer 112. Organic compounds with amine and fluorene backbones are more preferred. Organic compounds with amine and fluorene backbones have high reliability and high hole transport properties, thus reducing the power consumption of the light-emitting device.

[0171] The light-emitting layer 113 is a layer containing a light-emitting center material. Furthermore, it preferably contains a host material.

[0172] The luminescent center can be a fluorescent luminescent substance, a phosphorescent luminescent substance, a substance exhibiting thermally activated delayed fluorescence (TADF), or other luminescent substances.

[0173] In the luminescent layer, materials that can be used as fluorescent luminescent substances include, for example, the following substances. Note that other fluorescent luminescent substances can also be used.

[0174] Examples include 5,6-bis[4-(10-phenyl-9-anthrayl)phenyl]-2,2'-bipyridine (abbreviated as: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthrayl)biphenyl-4-yl]-2,2'-bipyridine (abbreviated as: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluorene-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluorene-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as: 1,6mMemFLPAPrn), N,N'-bis[4- [(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthrayl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthrayl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthrayl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthrayl)-4'-(9-phenyl-9H- Carbazole-3-yl)triphenylamine (abbreviated as PCPAPA), N,N''-(2-tert-butylanthracene-9,10-diylbis-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviated as DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthrayl)phenyl]-9H-carbazole-3-amine (abbreviated as 2PCAPPA), N-[4-(9,10-diphenyl-2-anthrayl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]- 2,7,10,15-Tetraamine (abbreviated as: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthrayl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthrayl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCABPhA), N-(9,10-diphenyl-2-anthrayl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthrayl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPABPhA), 9,10-Bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetraphenyl (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-yl)malonitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H, 5H-benzo[ij]quinazine-9-yl)vinyl]-4H-pyran-4-ylidene}malonium (abbreviation: DCM2), N,N,N',N'-tetra(4-methylphenyl)tetraphenyl-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetra(4-methylphenyl)acenaphthene[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinazine-9-yl)vinyl]-4H-pyran-4-ylidene}malonium (abbreviation: DCJT) I) 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinazin-9-yl)vinyl]-4H-pyran-4-ylidene}malonium (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)malonium (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinazin-9-yl)vinyl]-4H-pyran-4-ylidene}malonium (abbreviation: BisDCJ) TM), N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazole-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, 1,6FLPAPrn, 1,6mMemFLPAPrn, 1,Fused aromatic diamine compounds, such as pyrene diamine compounds like 6BnfAPrn-03, exhibit good hole trapping properties and high luminescence efficiency or good reliability, making them preferred choices.

[0175] In addition, 5,9-diphenyl-5,9-diaza-13b-boronanaphthene[3,2,1-de]anthracene (abbreviated as DABNA1), 9-(biphenyl-3-yl)-N,N,5,11-tetraphenyl-5H,9H-[1,4]benzozaborane[2,3,4-kl]phenazabor-3-amine (abbreviated as DABNA-2), and 2,12-bis(tert-butyl)-5,9-bis(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzozaborane[2,3,4-kl]phenazaborane can be used appropriately. -7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzozaborane[2,3,4-kl]phenazaborane-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzozaborane[2,3,4-kl]phenazaborane (abbreviation: Me-tBu4DABNA), N 7 N 7 N 13 N 13 Nitrogen- and boron-containing fused heteroaromatic compounds, especially those with a diaza-boron-naphtho-anthracene skeleton, can produce blue luminescence with good color purity due to their narrow emission spectra.

[0176] In addition, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazole-9-yl]-2,5,15,18-tetra(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzozaborane[2,3,4-kl]phenazaborane (abbreviated as: BBCz-G), 9,11-bis[3,6-bis(1,1-dimethylethyl)-9H-carbazole-9-yl]-2,5,15,18-tetra(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzozaborane[2,3,4-kl]phenazaborane (abbreviated as: BBCz-Y), etc. can be used appropriately.

[0177] In the luminescent layer, the phosphorescent material that can be used as the luminescent center is preferably a metal complex, especially an iridium complex or a platinum complex, for example the following substances.

[0178] Examples of organometallic iridium complexes with a 4H-triazole skeleton include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]) and tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Mptz)3]). Organometallic iridium complexes with a 1H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(Mptz1-mp)3]) and tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Prptz1-Me)3]); fac-tris[1-(2,6-diisopropyl] [Ir(iPrpim)3]iridium(III) (abbreviated as [Ir(iPrpim)3]), [3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as [Ir(dmpimpt-Me)3]), [2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazo-2-yl- Organometallic iridium complexes with an imidazole skeleton, such as κN3}-4-cyanophenyl-κC)iridium(III) (abbreviated as CNImIr); organometallic complexes with a benzimidazole skeleton, such as tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviated as [Ir(cb)3]); bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ Iridium(III) tetra(1-pyrazolyl)borate (abbreviated as: FIr6), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ Iridium(III) pyridine carboxylate (abbreviated as FIRPIC), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinium-N,C 2’} Iridium(III)pyridinecarboxylate (abbreviated as: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridin-N,C 2’Organometallic iridium complexes such as iridium(III) acetylacetone (abbreviated as FIracac) with phenylpyridine derivatives having electron-withdrawing groups as ligands; and platinum complexes such as (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazol-1-yl-2-ylide-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridyl-κN)carbazole-2,1-diyl-κC1)platinum(II) (abbreviated as PtON-TBBI). These substances are phosphorescent compounds exhibiting a blue hue and possessing emission peaks in the wavelength region of 450 nm to 520 nm. Additionally, compounds containing deuterium as a component of their hydrogen content can also be used.

[0179] In addition to tris(4-methyl-6-phenylpyrimidinium)iridium(III) (abbreviated as [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinium)iridium(III) (abbreviated as [Ir(tBuppm)3]), (acetylacetonium)bis(6-methyl-4-phenylpyrimidinium)iridium(III) (abbreviated as [Ir(mppm)2(acac)]), (acetylacetonium)bis(6-tert-butyl-4-phenylpyrimidinium)iridium(III) (abbreviated as [Ir(tBuppm)2(acac)]), (acetylacetonium)bis[6-(2-norbornyl)-4-phenylpyrimidinium]iridium(III) (abbreviated as [Ir(nbppm)2(acac)]), (acetylacetonium)bis[5-methyl-6- Organometallic iridium complexes with a pyrimidine skeleton, such as (2-methylphenyl)-4-phenylpyrimidinium[Ir(mpmppm)2(acac)] and (acetylacetonate)bis(4,6-diphenylpyrimidinium)iridium[Ir(dppm)2(acac)]; organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonate)bis(3,5-dimethyl-2-phenylpyrazine)iridium[Ir(mppr-Me)2(acac)] and (acetylacetonate)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium[Ir(mppr-iPr)2(acac)]; and tris(2-phenylpyridinium-N,C 2’ Iridium (III) (abbreviated as: [Ir(ppy)3]), bis(2-phenylpyridinium-N,C) 2’ Iridium (III) acetylacetone (abbreviated as: [Ir(ppy)2(acac)]), bis(benzo[h]quinoline)iridium (III) acetylacetone (abbreviated as: [Ir(bzq)2(acac)]), tri(benzo[h]quinoline)iridium (III) (abbreviated as: [Ir(bzq)3]), tri(2-phenylquinoline-N,C 2’Iridium (III) (abbreviated as: [Ir(pq)3]), bis(2-phenylquinoline-N,C) 2’Iridium (III) acetylacetone (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridin-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium (III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofurano[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium (III) (abbreviation: Ir( 5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridyl-κN)benzofurano[2,3-b]pyridin-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as: Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as: Ir(ppy)2(mdppy)), [2-(4-d3-methyl-5-phenyl-2-pyridyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl [2-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridin-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as: [Ir(ppy)2(mbfpypy)]), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium (abbreviated as: [Ir(ppy)2(mdppy)]), tri{2-[5-(methyl-d3)-4-phenyl-2-pyridyl-κN]phenyl-κC}iridium(III) (abbreviated as: Ir( Besides organometallic iridium complexes with a pyridine skeleton, such as 5m4dppy-d3)3), other rare earth metal complexes include tri(acetylacetone)(monophenyroline)terbium(III) (abbreviated as: [Tb(acac)3(Phen)]), and platinum(II) (abbreviated as: Pt(tBudppymmtBubiz-tBubp)), [2-(4-(3,5-di-tert-butylphenyl)-6-{3-[4-(5'-tert-butyl[1,1':3',Organometallic platinum complexes such as [1''-triphenyl]-2'-yl)-2-pyridyl-κN]phenyl-κC2}-2-pyridyl-κN]phenol-κO}platinum(II) (abbreviated as Pt(4tButpppypyp-mmtBup)) are used. These substances are primarily phosphorescent compounds exhibiting a green hue, with emission peaks in the 500 nm to 600 nm wavelength region. Furthermore, organometallic iridium complexes with a pyrimidine skeleton are particularly preferred due to their exceptionally excellent reliability or luminescent efficiency. Alternatively, compounds containing a portion of deuterium as hydrogen can also be used.

[0180] In addition, examples of organogolds with pyrimidine skeletons include: (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinium]iridium(III) (abbreviated as: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinium](dineopentylmethane)iridium(III) (abbreviated as: [Ir(5mdppm)2(dpm)]), and bis[4,6-bis(naphthyl-1-yl)pyrimidinium](dineopentylmethane)iridium(III) (abbreviated as: [Ir(d1npm)2(dpm)]). Organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonate)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dinepentanoylmethane)iridium(III) (abbreviated as [Ir(tppr)2(dpm)]), and (acetylacetonate)bis[2,3-bis(4-fluorophenyl)quinoxaloline]iridium(III) (abbreviated as [Ir(Fdpq)2(acac)]); tris(1-phenylisoquinoline-N,C 2’ Iridium (III) (abbreviated as: [Ir(piq)3]), bis(1-phenylisoquinoline-N,C) 2’Organometallic iridium complexes with a pyridine skeleton include iridium(III) acetylacetone (abbreviated as: [Ir(piq)2(acac)]), (3,7-diethyl-4,6-nonanedione-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III), (3,7-diethyl-4,6-nonanedione-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III). The compounds include platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP); and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato) (monopraninol) europium(III) (abbreviated as [Eu(DBM)3(Phen)]) and tris[1-(2-thiophenecarboxyl)-3,3,3-trifluoroacetone] (monopraninol) europium(III) (abbreviated as [Eu(TTA)3(Phen)]). These substances are phosphorescent compounds exhibiting a red hue and possessing an emission peak in the wavelength region of 600 nm to 700 nm. Furthermore, organometallic iridium complexes with a pyrazine skeleton can provide red luminescence with good colorimetry. Additionally, compounds containing a portion of deuterium as hydrogen can also be used.

[0181] In addition to the phosphorescent compounds mentioned above, other known phosphorescent compounds may also be used.

[0182] Fullerenes and their derivatives, acridines and their derivatives, and eosin derivatives can be used as TADF materials. In addition, metal porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can also be used. Examples of metalloporphyrins include protoporphyrin-tin fluoride complexes (SnF2(Proto IX)), mesoporphyrin-tin fluoride complexes (SnF2(Meso IX)), hematoporphyrin-tin fluoride complexes (SnF2(Hemato IX)), tetramethyl coprophyrin-tin fluoride complexes (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complexes (SnF2(OEP)), protoporphyrin-tin fluoride complexes (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complexes (PtCl2OEP), all represented by the following structural formulas.

[0183] [Chemical Formula 34] In addition, the following structural formulas can also be used: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviated as: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3 Heterocyclic compounds such as 5-triazine (abbreviated as PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-oxazanthracene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviated as DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviated as ACRSA) are heterocyclic compounds with one or both of π-electron-rich and π-electron-deficient heterocyclic rings. This heterocyclic compound possesses both π-electron-rich and π-electron-deficient heteroaromatic rings, exhibiting high electron and hole transport capabilities, and is therefore preferred. Among the skeletons with π-electron-deficient heteroaromatic rings, pyridine, diazine (pyrimidine, pyrazine, pyridazine), and triazine skeletons are stable and reliable, and are therefore preferred. In particular, benzofuran-pyrimidine, benzothiophene-pyrimidine, benzofuran-pyrazine, and benzothiophene-pyrazine skeletons exhibit high acceptor properties and good reliability, and are therefore preferred. Furthermore, among the skeletons with π-electron-rich heteroaromatic rings, acridine, phenoxazine, phenothiazine, furan, thiophene, and pyrrole skeletons are stable and reliable, and at least one of these skeletons is preferred. Moreover, dibenzofuran skeletons are preferred as furan skeletons, and dibenzothiophene skeletons are preferred as thiophene skeletons. As the pyrrole skeleton, indole, carbazole, indole-carbazole, bicarbazole, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeletons are particularly preferred. In substances where π-electron-rich and π-electron-deficient heteroaromatic rings are directly bonded, the π-electron-rich heteroaromatic ring exhibits high electron-donating and electron-accepting properties, while the energy difference between the S1 and T1 energy levels is smaller, resulting in highly efficient thermally activated delayed fluorescence; therefore, it is particularly preferred. Note that aromatic rings bonded with electron-withdrawing groups such as cyano groups can also be used instead of π-electron-deficient heteroaromatic rings. Furthermore, aromatic amine skeletons and phenazine skeletons can be used as π-electron-rich skeletons.Furthermore, as π-electron-deficient skeletons, the following can be used: oxanthracene skeleton, thioxanthene dioxide skeleton, oxadiazole skeleton, triazole skeleton, imidazole skeleton, anthraquinone skeleton, boron-containing skeletons such as phenylborane or boranthrene, aromatic or heteroaromatic rings with nitrile or cyanobenzene, carbonyl skeletons such as benzophenone, phosphine oxide skeleton, sulfone skeleton, etc. Thus, at least one of the π-electron-deficient and π-electron-rich heteroaromatic rings can be replaced by π-electron-deficient and π-electron-rich heteroaromatic rings.

[0184] [Chemical Formula 35] Furthermore, TADF materials that are in thermal equilibrium between singlet and triplet excited states can also be used as TADF materials. Because of their short luminescence lifetime (excitation lifetime), these TADF materials can suppress efficiency degradation in the high-brightness region of light-emitting devices. Specifically, materials with the following molecular structures can be cited as examples.

[0185] [Chemical Formula 36] Furthermore, TADF materials refer to materials with a small energy difference between the S1 and T1 levels and the ability to convert triple excitation energy into single excitation energy through antisystem crossing. Therefore, they can upconvert triple excitation energy into single excitation energy (antisystem crossing) with minimal thermal energy, efficiently generating singlet excited states. Additionally, triple excitation energy can be converted into luminescence.

[0186] Exciplexes formed by two substances in an excited state have the function of converting triple excitation energy into single excitation energy due to the extremely small difference between the S1 and T1 energy levels.

[0187] Note that the phosphorescence spectrum observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 energy level. For TADF materials, it is preferable that the difference between S1 and T1 is 0.3 eV or less, more preferably 0.2 eV or less, when the wavelength energy of the extrapolated line obtained by squaring a line at the tail of the short wavelength side of the fluorescence spectrum is taken as the S1 energy level and the wavelength energy of the extrapolated line obtained by squaring a line at the tail of the short wavelength side of the phosphorescence spectrum is taken as the T1 energy level.

[0188] Furthermore, when using TADF material as the luminescent material, the S1 energy level of the host material is preferably higher than that of the TADF material. Additionally, the T1 energy level of the host material is preferably higher than that of the TADF material.

[0189] As the main material of the light-emitting layer, various carrier transport materials such as materials with electron transport properties and / or materials with hole transport properties, the aforementioned TADF materials, etc., can be used.

[0190] As a material with hole transport capabilities, organic compounds having an amine skeleton or a π-electron-rich heteroaromatic ring skeleton are preferred. The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring comprising at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton; specifically, a carbazole ring, a dibenzothiophene ring, or a ring fused with an aromatic ring or a heteroaromatic ring.

[0191] Such hole-transporting organic compounds preferably have any one of the following: a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, they can be aromatic amines having substituents including a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines including a naphthyl ring, or aromatic monoamines in which a 9-fluorene group is bonded to the nitrogen of the amine via an arylene group. Note that when these hole-transporting organic compounds are substances including N,N-bis(4-biphenyl)amino groups, long-lifetime light-emitting devices can be manufactured, and therefore they are preferred.

[0192] As such organic compounds, the following organic compounds are preferred, for example: 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spirobis[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBA1BP). 4,4'-Diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-Di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCCNBB), 9,9-Dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirodi[9H-fluorene]-2-amine (abbreviation: P) Compounds with aromatic amine skeletons such as CBASF; 1,3-bis(N-carbazolyl)benzene (mCP), 4,4'-bis(N-carbazolyl)biphenyl (CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (PCCP), 3,9-bis(9-phenyl-9H-carbazol-3-yl)-9H-carbazole (PCCzPC), 9-(biphenyl-4-yl)-9'-phenyl-3,3'-bi-9H-carbazole (PCCzBP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (BisB) PCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H9'H-Bicarbazole (abbreviated as: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1''-triphenyl]-3-yl-3,3'-9H, 9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1''-triphenyl]-3-yl-3,3'-9H, 9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1''-triphenyl]-5'-yl-3,3'-9H, 9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1''-triphenyl]-4-yl-3,3'-9H, 9' H-Bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1''-triphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviated as: PCCzTp), 9,9'-bis(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenyl-2-yl) Compounds with a carbazole skeleton, such as 9'-[1,1':3',1''-triphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-1-amine, 9-[3-(triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviated: PSiCzCz), and 9'-phenyl-9'H-9,3':6',9''-tricarbazole (abbreviated: PSiCzGI); and 4,4',4''-(benzyl-1,3,5-triyl)tris(dibenzothiophene) (abbreviated: DBT3P-II). Compounds with a thiophene skeleton, such as 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III) and 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV); and compounds with a furan skeleton, such as 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviated as DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviated as mmDBFFLBi-II). Among these, compounds with an aromatic amine skeleton or a carbazole skeleton are preferred due to their high reliability, excellent hole transport properties, and ability to help reduce the driving voltage. Furthermore, organic compounds with hole transport properties, as materials for hole transport in the hole transport layer, can also be used.

[0193] As a material with electron transport properties, the preferred electron mobility is 1×10⁻¹⁰ when the square root of the electric field strength [V / cm] is 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 Substances with a value of / Vs or higher. Additionally, any substance other than those mentioned above can be used as long as its electron transport capability is higher than its hole transport capability.

[0194] As materials with electron transport properties, preferred materials include metal complexes such as bis(10-hydroxybenzo[h]quinoline)beryllium(II) (abbreviated: BeBq2), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviated: BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviated: Znq), bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated: ZnPBO), and bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated: ZnBTZ), as well as organic compounds including π-electron-deficient heteroaromatic rings. Examples of organic compounds including π-electron-deficient heteroaromatic ring skeletons include organic compounds containing heteroaromatic rings with azole skeletons, organic compounds containing heteroaromatic rings with pyridine skeletons, organic compounds containing heteroaromatic rings with diazine skeletons, and organic compounds containing heteroaromatic rings with triazine skeletons.

[0195] Organic compounds comprising heteroaromatic rings with a diazine (pyrimidine, pyrazine, or pyridazine) skeleton, organic compounds comprising heteroaromatic rings with a pyridine skeleton, or organic compounds comprising heteroaromatic rings with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds comprising heteroaromatic rings with a diazine (pyrimidine or pyrazine) skeleton and organic compounds comprising heteroaromatic rings with a triazine skeleton exhibit high electron transport properties, which helps to reduce the driving voltage. Furthermore, benzofuran-pyrimidine skeletons, benzothiophene-pyrimidine skeletons, benzofuran-pyrazine skeletons, and benzothiophene-pyrazine skeletons are preferred due to their high acceptor activity and reliability.

[0196] As organic compounds with a π-electron-deficient heteroaromatic ring skeleton, the following organic compounds are preferred, for example: 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated: PBD), 3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviated: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviated: CO11), 2,2',2''-(1,3,5-phenyltriyl)tris(1-phenyl-1H-benzimidazole) (abbreviated: TPBI), 2-[3-(diphenyltriyl)-5-(4 ...phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5-(4-phenyltriyl)-5- Organic compounds with an azole skeleton, such as benzothiophene-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II) and 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs); 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), phenanthroline (abbreviation: Bphen), copper hydroxide (abbreviation: BCP), 2,9-di(naphthyl-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2' Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P), 2-[3-(2-triphenylene)phenyl]-1,10-phenanthroline (abbreviated as mTpPPhen), 2-phenyl-9-(2-triphenylene)-1,10-phenanthroline (abbreviated as Ph-TpPhen), 2-[4-(9-phenanthyl)-1-naphthyl]-1,10-phenanthroline (abbreviated as PnNPhen), and 2-[4-(2-triphenylene)phenyl]-1,10-phenanthroline (abbreviated as pTpPPhen); 2-[3-(dibenzothiophene-4-yl) [Phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h] Quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furano[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophene-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furano[2,3-b]pyrazine (abbreviation: 9pmDBtB PNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophene-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBf) pm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuran[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuran[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(biphenyl-3-yl)]naphtho[1',2':4,5]furan[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthyl)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuran[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm) :8(βN2)-4mDBtPBfpm), 2,2'-(pyridin-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(pyridin-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthyl-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-Bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm) and other organic compounds with a diazine skeleton; 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobis[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl] 9'-Phenylacet-2,3'-Bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indo[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophene-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)] [Biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenyl-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-Triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-triphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 2-[4-(2-naphthyl)phenyl]-4-phenyl-6-spiro[9H-fluorene-9,9'-[9H]oxanthracene]-4-yl-1,3,5-triazine (abbreviation: βNP-SFx(4)Tzn), 9,9'-{6-[3-(triphenylsilyl)phenyl]-1,3,5-triazine]-1,3,5-triazine 2-Phenylacetyl-2,4-diyl}bis(9H-carbazole) (abbreviation: SiTrzCz2), 2-Phenylacetyl-4,6-bis[3-(triphenylsilyl)phenyl]-1,3,5-triazine (abbreviation: mSiTrz), 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-(biphenyl-3-yl)indolo[2,3-a]carbazole (abbreviation: BP-mBPIcz(II)Tzn), 3-{3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)- 2-Dibenzofuranyl]phenyl}-9-phenyl-9H-carbazole (abbreviation: mPCPDBfTzn), 9,9'-[6-(biphenyl-4-yl)-2-phenyl-1,3,5-triazin-4,3''-diyl]bis(9H-carbazole) (abbreviation: Cz-pmCzBPTzn), 3-phenyl-9-[4-phenyl-6-(9-phenyl-3-dibenzofuranyl)-1,3,5-triazin-2-yl]-9H-carbazole (abbreviation: PDBf-PCzTzn), 9-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzothiophenyl]-2-phenyl-9H-carbazole (abbreviation: PCzDBtT) Organic compounds including heteroaromatic rings with a triazine skeleton, such as zn, 2,4-diphenyl-6-[3'-(spiro[7H-benzo[c]fluorene-7,9'-[9H]oxanthracene]-2'-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: mSbfxBPTzn), 3'-[4-phenyl-6-(spiro[9H-fluorene-9,9'-[9H]oxanthracene]-2'-yl)-1,3,5-triazine-2-yl]biphenyl-4-carboxylonitrile (abbreviation: mpCNBP-SFxTzn), and 2,2'-[1,2-naphthidiyl(4,1-phenylene)]bis(4,6-diphenyl-1,3,5-triazine) (abbreviation: TznP2N). In addition, organic compounds including heteroaromatic rings with a diazine skeleton, organic compounds including heteroaromatic rings with a pyridine skeleton, or organic compounds including heteroaromatic rings with a triazine skeleton have high reliability.Therefore, they are preferred. In particular, organic compounds comprising heteroaromatic rings with a diazine (pyrimidine or pyrazine) skeleton and organic compounds comprising heteroaromatic rings with a triazine skeleton have high electron transport properties, which helps to reduce the driving voltage.

[0197] Furthermore, the organic compounds represented by general formulas (G1) to (G7) shown in Embodiment 1 can also be used as host materials with electron transport properties. By using the organic compounds represented by general formulas (G1) to (G7) shown in Embodiment 1 as host materials with electron transport properties, phosphorescent compounds with longer wavelengths than green can be made to emit light.

[0198] As a TADF material that can be used as the host material, the same materials mentioned above as TADF materials can be used. When a TADF material is used as the host material, the triple excitation energy generated by the TADF material is converted into a single excitation energy through antisystem crossing and further transferred to the luminescent material, thereby improving the luminous efficiency of the light-emitting device. In this case, the TADF material is used as an energy donor, and the luminescent material is used as an energy acceptor.

[0199] This is highly effective when the luminescent material is a fluorescent luminescent material. Furthermore, to obtain high luminescent efficiency, the S1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. Additionally, the T1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. Therefore, the T1 energy level of the TADF material is preferably higher than the T1 energy level of the fluorescent luminescent material.

[0200] Furthermore, it is preferable to use a TADF material that exhibits luminescence with a wavelength overlapping the absorption band on the lowest energy side of the fluorescent luminescent material. This allows for efficient transfer of excitation energy from the TADF material to the fluorescent luminescent material, resulting in highly efficient luminescence, and is therefore preferred.

[0201] To efficiently generate a singlet excitation energy from a triplet excitation energy via antisystem crossing, it is preferable to induce carrier recombination within the TADF material. Furthermore, it is preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent luminescent material. For this purpose, the fluorescent luminescent material preferably has a protecting group surrounding the luminescent body (the backbone that causes luminescence) of the fluorescent luminescent material. This protecting group is preferably a substituent without π bonds, preferably a saturated hydrocarbon; specifically, examples include alkyl groups with 3 or more but less than 10 carbon atoms, substituted or unsubstituted cycloalkyl groups with 3 or more but less than 10 carbon atoms, and trialkylsilyl groups with 3 or more but less than 10 carbon atoms; more preferably, multiple protecting groups are preferred. Substituents without π bonds have almost no function in transporting charge carriers, so they have little effect on charge carrier transport or recombination, allowing the TADF material and the luminescent body of the fluorescent luminescent material to be kept apart. Here, the luminescent body refers to the atomic group (backbone) in the fluorescent luminescent material that causes luminescence. The luminescent material preferably has a π-bonded framework, more preferably an aromatic ring, and even more preferably a fused aromatic ring or a fused heteroaromatic ring. Examples of such luminescent materials include phenanthrene, stilbene, acridinone, phenoxazine, phenothiazine, naphthalene, anthracene, fluorene, β-carbamate, triphenylene, tetraphenylene, pyrene, perylene, coumarin, quinacridone, and naphthobisbenzofuran frameworks. In particular, fluorescent luminescent materials having naphthalene, anthracene, fluorene, β-carbamate, triphenylene, tetraphenylene, pyrene, perylene, coumarin, quinacridone, and naphthobisbenzofuran frameworks exhibit high fluorescence quantum yields and are therefore preferred.

[0202] When using a fluorescent luminescent material as the luminescent material, materials with a benzo[a]benzene backbone, especially an anthracene backbone, are preferred as the host material. By using a material with an anthracene backbone as the host material of the fluorescent luminescent material, a luminescent layer with high luminous efficiency and durability can be achieved. Among the anthracene backbone materials used as host materials, those with a diphenylanthracene backbone, especially 9,10-diphenylanthracene, are chemically stable and therefore preferred. Furthermore, when the host material has a carbazole backbone, hole injection / transport is improved, which is also preferred. And when the host material has a benzo[a]carbazole backbone with a benzene ring fused to a carbazole, its HOMO energy level is about 0.1 eV higher than that of the host material with a carbazole backbone, making hole injection easier, which is even more preferred. In particular, when the host material has a dibenzo[a]carbazole backbone, its HOMO energy level is about 0.1 eV higher than that of the host material with a carbazole backbone, not only making hole injection easier but also improving hole transport and heat resistance, which is also preferred. Therefore, a further preferred material for use as the host material is one having a 9,10-diphenylanthracene framework and a carbazole framework (or a benzo[a]carbazole framework or a dibenzo[a]carbazole framework). Note that from the viewpoint of hole injection / transportation described above, a benzo[a]fluorene framework or a dibenzo[a]fluorene framework can also be used instead of a carbazole framework. Furthermore, reliability can be ensured without lowering the T1 energy level, so a dibenzofuran framework is preferred.

[0203] Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthrayl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9-[4-(10-phenyl-9-anthrayl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthrayl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthrayl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviated as 2mBnfPPA), and 9-phenyl-10-[4-(9-phenyl-9H-fluorene-9-yl)-[b]naphtho[1,2-d]furan (abbreviated as 2mBnfPPA). [Benzen-4'-yl]anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracene-9-yl)dibenzofuran, 2-(10-phenyl-9-anthrayl)benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthrayl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties and are therefore preferred.

[0204] Furthermore, the host material can also be a mixture of multiple substances. When using a mixed host material, it is preferable to mix materials with electron transport properties and materials with hole transport properties. By mixing materials with electron transport properties and materials with hole transport properties, it is easier to adjust the transport properties of the light-emitting layer 113 and to control the composite region more easily. The weight ratio of the materials with hole transport properties to those with electron transport properties can be from 1:19 to 19:1.

[0205] Note that phosphorescent materials can be used as part of the above-described mixture. When phosphorescent materials are used as fluorescent materials, they can be used as energy donors to supply excitation energy to the fluorescent materials.

[0206] Furthermore, these mixed materials can also be used to form excimer complexes. By selecting a combination of excimer complexes that form light-emitting excimer complexes with wavelengths overlapping the absorption band on the lowest energy side of the luminescent material, energy transfer can be facilitated, resulting in efficient light emission, which is therefore preferred. Furthermore, this structure allows for a reduction in driving voltage, which is also preferred.

[0207] Furthermore, at least one of the materials forming the excitocomplex can also be a phosphorescent material. This allows the triple excitation energy to be efficiently converted into a single excitation energy via antisystem crossing.

[0208] Regarding the combination of materials for efficiently forming excitocomplexes, the HOMO energy level of the material with hole transport is preferably above the HOMO energy level of the material with electron transport. Furthermore, the LUMO energy level of the material with hole transport is preferably above the LUMO energy level of the material with electron transport. Note that the LUMO and HOMO energy levels of the material can be determined from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0209] Note that by comparing the emission spectra of materials with hole transport capabilities, materials with electron transport capabilities, and the emission spectra of a hybrid film formed by mixing these materials, the phenomenon observed that the emission spectrum of the hybrid film shifts towards a longer wavelength (or has a new peak on the longer wavelength side) compared to the emission spectra of each material can confirm the formation of an excitocomplex. Alternatively, by comparing the transient photoluminescence (PL) of materials with hole transport capabilities, the transient PL of materials with electron transport capabilities, and the transient PL of a hybrid film formed by mixing these materials, the difference in transient response observed, such as the hybrid film having a longer lifetime component or a higher proportion of delayed components compared to the transient PL lifetimes of each material, can confirm the formation of an excitocomplex. Furthermore, the aforementioned transient PL can be referred to as transient electroluminescence (EL). In other words, by comparing the transient EL of materials with hole transport capabilities, the transient EL of materials with electron transport capabilities, and the transient EL of a hybrid film of these materials, and observing the differences in transient response, the formation of an excitocomplex can also be confirmed.

[0210] Electron transport layer 114 is a layer containing a material with electron transport properties. Preferably, the material with electron transport properties has an electron mobility of 1×10⁻⁶ when the square root of the electric field strength [V / cm] is 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2Substances with a value of / Vs or higher. Furthermore, any substance other than those mentioned above can be used as long as its electron transport capability is higher than its hole transport capability. As the aforementioned organic compounds, organic compounds comprising π-electron-deficient heteroaromatic rings are preferred. For example, one or more of the following are preferred: organic compounds comprising a heteroaromatic ring with an azole skeleton, organic compounds comprising a heteroaromatic ring with a pyridine skeleton, organic compounds comprising a heteroaromatic ring with a diazine skeleton, and organic compounds comprising a heteroaromatic ring with a triazine skeleton.

[0211] As an electron-transporting material that can be used in the electron transport layer 114, organic compounds with electron transport properties, such as those used as the main material in the light-emitting layer 113, can also be used.

[0212] Among the organic compounds with electron transport properties listed as suitable host materials, those with a diazine skeleton, those with a pyridine skeleton, and those with a triazine skeleton are preferred due to their good reliability. In particular, organic compounds with a diazine (pyrimidine or pyrazine) skeleton and those with a triazine skeleton exhibit high electron transport properties, which helps to reduce the driving voltage. Organic compounds with a phenanthroline skeleton, such as mTpPPhen, PnNPhen, and mPPhen2P, are especially preferred, and organic compounds with a phenanthroline dimer structure, such as mPPhen2P, are even more preferred due to their excellent stability.

[0213] Furthermore, the organic compounds represented by general formulas (G1) to (G7) shown in Embodiment 1 are also suitable for the electron transport layer 114. By using the organic compounds represented by general formulas (G1) to (G7) shown in Embodiment 1 for the electron transport layer 114, the electron injection capability from the electron injection layer 115 is improved. In addition, the high electron transport capability of the organic compounds represented by general formulas (G1) to (G7) shown in Embodiment 1 helps to reduce the driving voltage.

[0214] Note that the electron transport layer 114 may also have a stacked structure. The layer in the electron transport layer 114 that is in contact with the light-emitting layer 113 can also be used as a hole blocking layer. When the electron transport layer in contact with the light-emitting layer is used as a hole blocking layer, it is preferable to use a material whose HOMO energy level is more than 0.5 eV lower than the HOMO energy level of the material in the light-emitting layer 113.

[0215] As the electron injection layer 115, a layer containing alkali metals or alkaline earth metals, compounds or complexes of alkali metals or alkaline earth metals, or 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimidino[1,2-a]pyrimidine) (abbreviated as hpp2Py) may also be used. As the electron injection layer 115, a layer containing the above-mentioned substances may also be used in a layer composed of a substance with electron transport properties.

[0216] Furthermore, the electron injection layer 115 preferably comprises an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1. By comprising an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1, electron injection capability is improved, thereby enabling a light-emitting device with low driving voltage. Additionally, the electron injection layer 115 comprising an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1 can improve the donor nature of the metal or metal compound by coordinating with it. Therefore, even if the electron injection layer 115 is exposed to an atmospheric atmosphere, functional impairment of the electron injection layer 115 can be suppressed, thereby suppressing the rise in driving voltage and providing a light-emitting device with excellent characteristics.

[0217] In other words, even when the light-emitting device includes an electron injection layer 115 containing an organic compound and a metal or metal compound represented by general formula (G1) to general formula (G7) as shown in Embodiment 1, there is no significant increase in the driving voltage, and a light-emitting device with good characteristics can be realized.

[0218] Alternatively, a charge generation layer 116 can be provided instead of an electron injection layer 115. Figure 1B The charge generation layer 116 is such that, by applying a potential, holes can be injected into the layer in contact with the cathode side of the layer, and electrons can be injected into the layer in contact with the anode side of the layer. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is preferably formed using a composite material described above as a material that can constitute the hole injection layer 111. Alternatively, the P-type layer 117 can also be formed by laminating a film containing an acceptor material as described above as a material constituting the composite material and a film containing a hole transport material. By applying a potential to the P-type layer 117, electrons and holes are injected into the electron transport layer 114 and the cathode, respectively, causing the light-emitting device to operate. In addition, one embodiment of the organic compound of the present invention is an organic compound with a low refractive index, and by using it in the P-type layer 117, a light-emitting device with good external quantum efficiency can be obtained.

[0219] In addition to the P-type layer 117, the charge generation layer 116 preferably includes one or both of the electron relay layer 118 and the electron injection buffer layer 119.

[0220] The electron relay layer 118 contains at least an electron transport material and is capable of preventing the interaction between the electron injection buffer layer 119 and the P-type layer 117, while facilitating electron transfer. The LUMO energy level of the electron transport material contained in the electron relay layer 118 is preferably located between the LUMO energy level of the acceptor material in the P-type layer 117 and the LUMO energy level of the material contained in the layer in the electron transport layer 114 that contacts the charge generation layer 116. Specifically, the LUMO energy level of the electron transport material in the electron relay layer 118 is preferably -5.0 eV or higher, more preferably -5.0 eV or higher and -3.0 eV or lower, more preferably -4.30 eV or higher and -3.00 eV or lower, and even more preferably -4.30 eV or higher and -3.30 eV or lower, thereby suppressing the rise of the driving voltage. Furthermore, phthalocyanine materials or metal complexes having metal-oxygen bonds and aromatic ligands are preferably used as electron transport materials for the electron relay layer 118.

[0221] As electron transporting materials for the electron relay layer 118, specifically, perylene tetracarboxylic acid derivatives such as diquinoxolino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), 2,3,8,9,14,15-hexafluorodiquinoxolino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA-F6), 3,4,9,10-perylene tetracarboxylic acid diimide (abbreviated as PTCDI), and 3,4,9,10-perylene tetracarboxylic acid-bis-benzimidazole (abbreviated as PTCBI), as well as (C60-Ih)[5,6]fullerene (abbreviated as C60) and (C70-D5h)[5,6]fullerene (abbreviated as C70) can be used. Alternatively, compounds with a heterocyclic cyclophenene skeleton can be used, such as phthalocyanine compounds like phthalocyanine (abbreviated as H2Pc). Alternatively, metal phthalocyanines containing copper, zinc, cobalt, chromium, nickel, etc., and their derivatives, such as copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), cobalt phthalocyanine (CoPc), iron phthalocyanine (FePc), tin phthalocyanine (SnPc), tin phthalocyanine (SnOPc), titanium phthalocyanine (TiOPc), and vanadium phthalocyanine (VOPc), can be used. In particular, phthalocyanine metal complexes such as copper phthalocyanine or zinc phthalocyanine, or 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine, are preferred.

[0222] The electron injection buffer layer 119 can use alkali metals, alkaline earth metals, rare earth metals and their compounds (alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate or cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates) or rare earth metal compounds (including oxides, halides, carbonates)) and other materials with high electron injection properties.

[0223] Furthermore, when the electron injection buffer layer 119 contains electron transport materials and donor materials, the donor materials can be alkali metals, alkaline earth metals, rare earth metals, and compounds of these materials (alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, and carbonates), or rare earth metal compounds (including oxides, halides, and carbonates)). Organic compounds such as tetrathianaphthacene (TTN), nickel-cadmium, and decamethylnickel-cadmium can also be used. Additionally, the electron transport materials can be the same as those used for the electron transport layer 114 described above.

[0224] Furthermore, the electron injection buffer layer 119 preferably contains an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1. By containing an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1, electron injection capability is improved, thereby enabling a light-emitting device with low driving voltage.

[0225] Furthermore, the electron injection buffer layer 119, which contains an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1, can improve the donor properties of the metal or metal compound by coordinating with it. Therefore, even if the charge generation layer 116 is exposed to the atmospheric atmosphere, the functional impairment of the electron injection buffer layer 119 can be suppressed, thereby suppressing the rise in driving voltage and providing a light-emitting device with excellent characteristics.

[0226] In other words, even when a light-emitting device is processed using photolithography, which includes an electron injection buffer layer 119 comprising an organic compound and a metal or metal compound represented by general formulas (G1) to (G7) as shown in Embodiment 1, there is no significant increase in the driving voltage, and a light-emitting device with good characteristics can be realized.

[0227] The second electrode 102 is an electrode that includes a cathode. The second electrode 102 may also have a stacked structure, in which case the layer in contact with the organic compound layer 103 is used as the cathode. As the material forming the cathode, metals, alloys, conductive compounds, and mixtures thereof with low work functions (specifically below 3.8 eV) can be used. Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), alloys containing them (MgAg, AlLi), compounds (lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc.), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing them. However, by providing an electron injection layer 115 or a thin film of a material with a small work function between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, etc., can be used as cathodes regardless of the size of the work function.

[0228] Furthermore, when the second electrode 102 is formed using a material that is transmissive to visible light, a light-emitting device that emits light from one side of the second electrode 102 can be formed. Additionally, by forming a capping layer on the second electrode 102 using a material with a high refractive index (e.g., a material with an ordinary refractive index (no) of 1.90 or higher at a wavelength of 450 nm, an ordinary refractive index (no) of 1.80 or higher at a wavelength of 520 nm, or an ordinary refractive index (no) of 1.75 or higher at a wavelength of 630 nm), the light extraction efficiency can be improved. The capping layer is preferably made of an organic compound, as it is easy to form.

[0229] These conductive materials can be deposited using dry methods such as vacuum evaporation and sputtering, as well as inkjet printing and spin coating. Alternatively, they can be formed using wet methods such as sol-gel or wet methods using pastes of metallic materials.

[0230] Furthermore, various methods, whether dry or wet, can be used to form the organic compound layer 103. For example, vacuum evaporation, gravure printing, offset printing, screen printing, inkjet printing, or spin coating can also be used.

[0231] In addition, the aforementioned electrodes or layers can also be formed using different deposition methods.

[0232] Next, refer to Figure 1C This describes a light-emitting device (also called a stacked device or tandem device) with a structure having multiple light-emitting units stacked together. This light-emitting device has multiple light-emitting units between the anode and cathode. Each light-emitting unit has a... Figure 1AThe organic compound layer 103 shown has a structure that is substantially the same. That is to say, it can be said that... Figure 1C The light-emitting device shown is a light-emitting device with multiple light-emitting units, while Figure 1A or Figure 1B The light-emitting device shown is a light-emitting device with one light-emitting unit.

[0233] exist Figure 1C In this structure, a first light-emitting unit 511 and a second light-emitting unit 512 are stacked between the first electrode 501 and the second electrode 502, and an intermediate layer 513 is disposed between the first light-emitting unit 511 and the second light-emitting unit 512. The first electrode 501 and the second electrode 502 respectively correspond to... Figure 1A The first electrode 101 and the second electrode 102 are used in the process, and can be applied to... Figure 1A The same material as described. In addition, the first light-emitting unit 511 and the second light-emitting unit 512 may be made of the same material or different materials.

[0234] The intermediate layer 513 has the function of injecting electrons into one light-emitting unit and holes into another light-emitting unit when a voltage is applied to the first electrode 501 and the second electrode 502. That is, in Figure 1C In the case where a voltage is applied such that the potential of the anode is higher than that of the cathode, the intermediate layer 513 can simply be a layer that injects electrons into the first light-emitting unit 511 and holes into the second light-emitting unit 512.

[0235] The intermediate layer 513 preferably has the same as Figure 1B The charge generation layer 116 shown has the same structure. Because the composite material of organic compound and metal oxide has good carrier injection and carrier transport properties, it is possible to achieve low voltage drive and low current drive.

[0236] In particular, the electron injection buffer layer 119 in the intermediate layer 513 preferably contains an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1. By containing an organic compound represented by general formulas (G1) to (G7) as shown in Embodiment 1, electron injection capability is improved, and a light-emitting device with low driving voltage can be realized.

[0237] Furthermore, the electron injection buffer layer 119, which contains organic compounds represented by general formulas (G1) to (G7) as shown in Embodiment 1, can improve the donor properties of metals or metal compounds by coordinating with them. Therefore, even when the organic compound layer 503 is exposed to atmospheric conditions, the functional impairment of the electron injection buffer layer 119 in the intermediate layer 513 can be suppressed, thereby suppressing the rise in driving voltage and providing a light-emitting device with excellent characteristics.

[0238] In other words, even when processed using photolithography, which includes an intermediate layer 513 comprising an electron injection buffer layer 119 containing an organic compound and a metal or metal compound represented by general formulas (G1) to (G7) as shown in Embodiment 1, there is no significant increase in driving voltage, and a light-emitting device with good characteristics can be realized.

[0239] Note that when the anode side of the light-emitting unit is in contact with the intermediate layer 513, the intermediate layer 513 can function as a hole injection layer of the light-emitting unit, so the light-emitting unit may not have a hole injection layer.

[0240] In addition, when an electron injection buffer layer 119 is provided in the intermediate layer 513, since the electron injection buffer layer 119 has the function of an electron injection layer in the light-emitting unit on the anode side, it is not necessary to provide an electron injection layer in the light-emitting unit on the anode side.

[0241] Although Figure 1C The description above refers to a light-emitting device with two light-emitting units, but similarly, light-emitting devices with three or more light-emitting units stacked can be applied. As in the light-emitting device according to this embodiment, by arranging multiple light-emitting units between a pair of electrodes and separating these multiple light-emitting units using an intermediate layer 513, the device can achieve high brightness emission while maintaining low current density and can achieve a long lifespan. Furthermore, a light-emitting device capable of low-voltage driving and low power consumption can be realized.

[0242] Furthermore, by making each light-emitting unit emit a different color, the desired hue of light can be obtained from the entire light-emitting device. For example, by obtaining red and green hues of light emission from the first light-emitting unit and blue hue of light emission from the second light-emitting unit in a light-emitting device with two light-emitting units, a light-emitting device that emits white light throughout the device can be obtained. Additionally, by making the light-emitting center material in each light-emitting unit emit the same hue of light emission, a light-emitting device with very high current efficiency can be provided.

[0243] Furthermore, the aforementioned organic compound layer 103, the first light-emitting unit 511, the second light-emitting unit 512, the charge-generating layer, and the electrodes can be formed using methods such as vapor deposition (including vacuum vapor deposition), droplet jetting (also known as inkjet printing), coating, and gravure printing. Additionally, it may contain low-molecular-weight materials, medium-molecular-weight materials (including oligomers and dendritic polymers), or high-molecular-weight materials.

[0244] (Implementation Method 3) In this embodiment, a display device manufactured using the light-emitting devices shown in Embodiments 1 and 2 will be described with reference to FIG2. Note that... Figure 2A This is a top view showing the display device, and Figure 2B It is along Figure 2A The diagram shows a cross-sectional view of lines AB and CD cut off. In this display device, the unit used to control the light emission of the light-emitting device includes a driving circuit section (source line driving circuit) 601 (indicated by dashed lines), a pixel section 602, and a driving circuit section (gate line driving circuit) 603. Furthermore, symbol 604 represents a sealing substrate, symbol 605 represents a sealing material, and the inner side surrounded by the sealing material 605 is a space 607.

[0245] Note that the guide wiring 608 is used to transmit signals input to the source line drive circuit 601 and the gate line drive circuit 603, and to receive video signals, clock signals, start signals, reset signals, etc., from the FPC (flexible printed circuit) 609, which serves as an external input terminal. Note that although only the FPC is shown here, it can also be equipped with a printed circuit board (PWB). The display device described in this specification includes not only the display device body but also the display device equipped with an FPC or PWB.

[0246] Below, refer to Figure 2B Explanation of the cross-sectional structure. Although a driving circuit section and a pixel section are formed on the element substrate 610, only one pixel of the source line driving circuit 601 and pixel section 602 is shown here.

[0247] In addition to substrates made of glass, quartz, organic resin, metal, alloy, semiconductor, etc., the component substrate 610 can also use plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester or acrylic resin.

[0248] There are no particular restrictions on the structure of the transistors used in the pixel and driving circuitry. For example, anti-interleaved transistors or interleaved transistors can be used. Alternatively, top-gate transistors or bottom-gate transistors can also be used. There are no particular restrictions on the semiconductor materials used in the transistors; for example, silicon, germanium, silicon carbide, gallium nitride, etc., can be used. Alternatively, oxide semiconductors containing at least one of indium, gallium, and zinc, such as In-Ga-Zn metal oxides, can be used.

[0249] There are no particular restrictions on the crystallinity of the semiconductor material used in transistors; amorphous semiconductors or crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with a portion of crystalline regions) can be used. Crystalline semiconductors are preferred because they can suppress transistor performance degradation.

[0250] Here, oxide semiconductors are preferably used in semiconductor devices such as transistors disposed in the aforementioned pixels and driving circuits, and in transistors for touch sensors, etc., as described later. Oxide semiconductors with a wider bandgap than silicon are particularly preferred. By using oxide semiconductors with a wider bandgap than silicon, the off-state current of the transistors can be reduced.

[0251] The aforementioned oxide semiconductor preferably contains at least indium (In) or zinc (Zn). Furthermore, the aforementioned oxide semiconductor is more preferably an oxide semiconductor containing an oxide represented by an In-M-Zn oxide (where M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0252] In particular, as a semiconductor layer, an oxide semiconductor film is preferably used that has a plurality of crystal portions, the c-axis of which is oriented perpendicular to the surface to which the semiconductor layer is formed or the top surface of the semiconductor layer, and there are no grain boundaries between adjacent crystal portions.

[0253] By using the aforementioned materials as a semiconductor layer, variations in electrical properties are suppressed, thereby enabling the realization of highly reliable transistors.

[0254] Furthermore, because the transistors with the aforementioned semiconductor layer have low off-state currents, the charge stored in the capacitors through the transistors can be maintained for extended periods. By using such transistors in pixels, the driving circuit can be stopped while maintaining the grayscale of each pixel. As a result, electronic devices with extremely low power consumption can be realized.

[0255] To stabilize transistor characteristics, a base film is preferably provided. As the base film, inorganic insulating films such as silicon oxide, silicon nitride, silicon oxynitride, and silicon oxynitride can be used and fabricated as a single layer or in stacks. The base film can be formed by sputtering, CVD (Chemical Vapor Deposition) methods (plasma CVD, thermal CVD, MOCVD (Metal Organic CVD), etc.), ALD (Atomic Layer Deposition), coating, printing, etc. Note that a base film is optional if not required.

[0256] Note that FET623 represents one of the transistors formed in the drive circuit section 601. Furthermore, the drive circuit can also be formed using various CMOS, PMOS, or NMOS circuits. Although this embodiment shows a driver integrated with the drive circuit formed on the substrate, this structure is not mandatory; the drive circuit can also be formed externally instead of on the substrate.

[0257] Furthermore, the pixel unit 602 is formed by a plurality of pixels, each of which includes a switching FET 611, a current control FET 612, and a first electrode 613 electrically connected to the drain of the current control FET 612. However, it is not limited to this and a pixel unit combining three or more FETs and capacitors may also be used.

[0258] Note that the insulator 614 is formed in such a way that it covers the end of the first electrode 613. Here, a positive photosensitive acrylic resin film can be used to form the insulator 614.

[0259] Furthermore, the upper or lower end of the insulator 614 is formed as a curved surface to obtain good coverage for the subsequently formed organic compound layer, etc. For example, when using a positive photosensitive acrylic resin as the material of the insulator 614, it is preferable that only the upper end of the insulator 614 includes a curved surface with a radius of curvature (0.2 μm to 3 μm). Negative or positive photosensitive resins can be used as the insulator 614.

[0260] An organic compound layer 616 and a second electrode 617 are formed on the first electrode 613. Here, a material with a high work function is preferably used as the material for the first electrode 613, which serves as the anode. For example, in addition to single-layer films such as ITO films, indium tin oxide films containing silicon, indium oxide films containing 2 wt% to 20 wt% zinc oxide, titanium nitride films, chromium films, tungsten films, Zn films, and Pt films, laminates composed of titanium nitride films and films with aluminum as the main component, as well as three-layer structures composed of titanium nitride films, films with aluminum as the main component, and titanium nitride films, can also be used. Note that by employing a laminated structure, the resistance of the wiring can be lower, good ohmic contact can be obtained, and it can be used as an anode.

[0261] Furthermore, the organic compound layer 616 is formed using various methods such as vapor deposition using a vapor deposition mask, inkjet printing, and spin coating. The organic compound layer 616 includes the structures shown in Embodiments 1 and 2. Additionally, low-molecular-weight compounds or high-molecular-weight compounds (including oligomers and dendritic polymers) can be used as other materials constituting the organic compound layer 616.

[0262] Furthermore, as the material used for the second electrode 617 formed on the organic compound layer 616 and used as a cathode, a material with a low work function (Al, Mg, Li, Ca, or their alloys and compounds (MgAg, MgIn, AlLi, etc.)) is preferably used. Note that when light generated in the organic compound layer 616 is transmitted through the second electrode 617, a stack consisting of a thinned metal film and a transparent conductive film (ITO, indium oxide containing 2wt% to 20wt% zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) is preferably used as the second electrode 617.

[0263] Furthermore, the light-emitting device is formed by a first electrode 613, an organic compound layer 616, and a second electrode 617. This light-emitting device is the same as that shown in Embodiments 1 and 2. Additionally, the pixel portion is composed of multiple light-emitting devices, and the display device of this embodiment may also include both the light-emitting devices shown in Embodiments 1 and 2 and light-emitting devices with other structures.

[0264] Furthermore, by attaching the sealing substrate 604 to the element substrate 610 using a sealing material 605, the light-emitting device 618 is disposed within a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filler; this filler can be an inactive gas (nitrogen, argon, etc.) or a sealing material. Forming a recess in the sealing substrate and placing a desiccant therein is preferred as it helps to suppress deterioration caused by moisture.

[0265] Furthermore, epoxy resin and glass powder are preferably used as sealing materials 605. These materials are also preferably those that minimize the permeability of moisture and oxygen. In addition to glass substrates and quartz substrates, plastic substrates made of FRP (fiber reinforced plastics), PVF (polyvinyl fluoride), polyester, acrylic resin, etc., can also be used as materials for the sealing substrate 604.

[0266] Although not shown in Figure 2, a capping layer and / or protective film can also be formed on the second electrode. Forming a capping layer can improve the light extraction efficiency of the light-emitting device. The capping layer is preferably formed using a material with an ordinary refractive index (no) of 1.90 or higher at a wavelength of 450 nm, an ordinary refractive index (no) of 1.80 or higher at a wavelength of 520 nm, or an ordinary refractive index (no) of 1.75 or higher at a wavelength of 630 nm. Furthermore, the capping layer is preferably formed using an organic compound deposited by vapor deposition, which facilitates its formation.

[0267] The protective film can be formed from organic resin films or inorganic insulating films. In particular, materials that can be formed using the ALD method are preferred for the protective film. The ALD method can form a dense protective film with reduced or uniform thickness, minimizing defects such as cracks and pinholes. Furthermore, damage to the processed component during the formation of the protective film can be reduced.

[0268] Alternatively, a protective film can be formed to cover the exposed portion of the sealing material 605. Furthermore, the protective film can be provided to cover the surface and sides of a pair of substrates, the exposed sides of the sealing layer, the insulating layer, etc.

[0269] As a protective membrane, materials that are not easily permeable to water and other impurities can be used. Therefore, it can effectively prevent water and other impurities from diffusing from the outside to the inside.

[0270] Materials constituting the protective film can include oxides, nitrides, fluorides, sulfides, ternary compounds, metals, or polymers. Examples include materials containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, or indium oxide; materials containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, gallium nitride; nitrides containing titanium and aluminum; oxides containing titanium and aluminum; oxides containing aluminum and zinc; sulfides containing manganese and zinc; sulfides containing cerium and strontium; oxides containing erbium and aluminum; and oxides containing yttrium and zirconium. Note that aluminum oxide is particularly preferred as the protective film.

[0271] The protective film is preferably formed using a deposition method with good step coverage. One such method is the ALD method. For example, by forming a protective film using the ALD method, a uniform protective film with few defects can be formed on the top, sides, and back of a surface or touch panel with complex uneven shapes.

[0272] As described above, a display device manufactured using the light-emitting devices shown in Embodiment 1 and Embodiment 2 can be obtained.

[0273] Because the light-emitting device in this embodiment uses the light-emitting devices shown in Embodiments 1 and 2, a light-emitting device with excellent characteristics can be obtained. Specifically, the light-emitting devices shown in Embodiments 1 and 2 have high luminous efficiency, thereby enabling a low-power display device. Furthermore, the light-emitting devices shown in Embodiments 1 and 2 have high reliability, thereby enabling a highly reliable display device. In addition, the light-emitting devices shown in Embodiments 1 and 2 can be light-emitting devices with good display quality.

[0274] Furthermore, this embodiment can be freely combined with other embodiments.

[0275] (Implementation Method 4) like Figure 3A and Figure 3B As shown, multiple light-emitting devices 130 are formed on the insulating layer 175 and constitute a display device.

[0276] The display device 100 includes a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixels 178 include sub-pixels 110R, 110G, and 110B.

[0277] In this specification, for example, when describing the common content among subpixels 110R, 110G, and 110B, they are sometimes referred to as subpixel 110. Similarly, when describing the common content among other constituent elements distinguished by letters, symbols with omitted letters are sometimes used.

[0278] Subpixel 110R emits red light, subpixel 110G emits green light, and subpixel 110B emits blue light. Thus, an image can be displayed on pixel unit 177. In this embodiment, a subpixel of three colors—red (R), green (G), and blue (B)—is used as an example, but combinations of other colors of subpixels can also be used. Furthermore, the number of subpixels is not limited to three; four or more can be used. Examples of four subpixels include: a subpixel of four colors—R, G, B, and white (W); a subpixel of four colors—R, G, B, and Y; and a subpixel of four colors—R, G, B, and infrared (IR); etc.

[0279] In this specification, the row direction is sometimes referred to as the X direction and the column direction as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0280] exist Figure 3A In the example shown, subpixels of different colors are arranged in the X direction, and subpixels of the same color are arranged in the Y direction. Note that subpixels of different colors can also be arranged in the Y direction, and subpixels of the same color can also be arranged in the X direction.

[0281] A connecting portion 140 may be provided on the outer side of the pixel portion 177, and a region 141 may also be provided. When the region 141 is provided, it is located between the pixel portion 177 and the connecting portion 140. An organic compound layer is provided in the region 141. Furthermore, a conductive layer 151C is provided on the connecting portion 140.

[0282] exist Figure 3AIn the example shown, region 141 and connecting portion 140 are located to the right of pixel portion 177, but there are no particular restrictions on the position of region 141 and connecting portion 140. Furthermore, region 141 and connecting portion 140 may be one or more.

[0283] Figure 3B It is along Figure 3A An example of a cross-sectional view of the dashed-dot line A1-A2 in the diagram. For example... Figure 3B As shown, the display device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is disposed on a substrate (not shown). The insulating layers 175, 174, and 173 are provided with openings leading to the conductive layer 172, and a plug 176 is disposed such that it is inserted into the openings.

[0284] In the pixel section 177, a light-emitting device 130 is disposed on the insulating layer 175 and the plug 176. Furthermore, a protective layer 131 is disposed to cover the light-emitting device 130. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Additionally, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are preferably disposed between adjacent light-emitting devices 130.

[0285] Figure 3B Cross-sections of multiple inorganic insulating layers 125 and multiple insulating layers 127 are shown, but when viewed from above, the inorganic insulating layers 125 and insulating layers 127 are preferably formed as a continuous layer.

[0286] Figure 3B Light-emitting devices 130R, 130G, and 130B are shown as light-emitting device 130. Light-emitting devices 130R, 130G, and 130B emit light of different colors from each other. For example, light-emitting device 130R may emit red light, light-emitting device 130G may emit green light, and light-emitting device 130B may emit blue light. Furthermore, light-emitting devices 130R, 130G, or 130B may also emit other visible or infrared light.

[0287] One aspect of the display device of the present invention may include a top-emitting structure (top-emitting structure) that emits light in a direction opposite to that of the substrate on which the light-emitting device is formed. Furthermore, another aspect of the display device of the present invention may include a bottom-emitting structure (bottom-emitting structure).

[0288] The light-emitting device 130R includes a first electrode 101R (pixel electrode) composed of conductive layers 151R and 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but its presence reduces damage to the organic compound layer 103R during processing, making it preferred.

[0289] The light-emitting device 130G includes a first electrode 101G (pixel electrode) composed of conductive layers 151G and 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but its presence reduces damage to the organic compound layer 103G during processing, making it preferred.

[0290] The light-emitting device 130B includes a first electrode 101B (pixel electrode) composed of conductive layers 151B and 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided, but its presence reduces damage to the organic compound layer 103B during processing, making it preferred.

[0291] Furthermore, the common layer 104 is preferably an electron injection layer or an electron transport layer, more preferably an electron injection layer. Additionally, when the common layer 104 is an electron transport layer, this electron transport layer preferably has a stacked structure; more preferably, in the stacked layers, the layer on the second electrode side is the common layer 104 and the layer on the light-emitting layer side is an organic compound layer 103.

[0292] In addition, light-emitting devices 130R and 130G are also light-emitting devices manufactured through photolithography, so they can achieve light-emitting devices with low driving voltage that suppress the rise in driving voltage caused by photolithography.

[0293] In the light-emitting device 130, one of the pixel electrode and the common electrode is used as the anode, and the other is used as the cathode. Hereinafter, unless otherwise stated, it will be described assuming that the pixel electrode is used as the anode and the common electrode is used as the cathode.

[0294] Organic compound layers 103R, 103G, and 103B are arranged independently in an island-like pattern according to each light-emitting device or each light-emitting color. By arranging the organic compound layers 103 in an island-like pattern for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in high-definition display devices. This prevents crosstalk and enables display devices with extremely high contrast. In particular, it enables display devices with high current efficiency at low brightness.

[0295] The island-shaped organic compound layer 103 is formed by depositing an organic compound film and processing the organic compound film using photolithography.

[0296] The organic compound layer 103 is preferably disposed such that it covers the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the display device 100 compared to a structure where the end of the organic compound layer 103 is located inside the end of the pixel electrode. Furthermore, by covering the side surfaces of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, contact between the pixel electrode and the second electrode 102 can be suppressed, thus preventing short circuits in the light-emitting device 130.

[0297] In one aspect of the display device of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in Figure 3B In the example shown, the first electrode of the light-emitting device 130 has a stacked structure of conductive layer 151 and conductive layer 152.

[0298] As the conductive layer 151, a metallic material can be used, for example. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys thereof can be used.

[0299] As the conductive layer 152, an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, conductive oxides containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium-containing zinc oxide, titanium oxide, gallium-containing indium zinc oxide, aluminum-containing indium zinc oxide, silicon-containing indium tin oxide, and silicon-containing indium zinc oxide are preferred. In particular, silicon-containing indium tin oxide has a large work function, for example, 4.0 eV or more, so it is suitable for use as the conductive layer 152.

[0300] Conductive layer 151 and conductive layer 152 may each have a stacked structure containing multiple layers of different materials. In this case, conductive layer 151 may also include a layer using a material that can be used in conductive layer 152, such as a conductive oxide, and conductive layer 152 may also include a layer using a material that can be used in conductive layer 151, such as a metallic material. For example, when conductive layer 151 has a stacked structure of two or more layers, the layer in contact with conductive layer 152 may be a layer using a material that can be used in conductive layer 152.

[0301] Furthermore, the side surface of the conductive layer 151 preferably has a tapered shape. Specifically, the side surface of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 disposed along the side surface of the conductive layer 151 also has a tapered shape. By making the side surface of the conductive layer 152 tapered, the coverage of the organic compound layer 103 disposed along the side surface of the conductive layer 152 can be improved.

[0302] Next, referring to Figures 4 to 9, we will describe the product with... Figure 3A An example of a manufacturing method for the display device 100 with the structure shown.

[0303] [Example 1 of manufacturing method] Thin films (insulating films, semiconductor films, and conductive films, etc.) that make up a display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), or ALD.

[0304] In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using wet deposition methods such as spin coating, dip coating, spray coating, inkjet coating, dispenser coating, screen printing, offset printing, doctor knife coating, slot coating, roller coating, curtain coating, or doctor blade coating.

[0305] In addition, when processing the thin film constituting the display device, photolithography can be used, for example.

[0306] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365nm), g-line (wavelength 436nm), h-line (wavelength 405nm), or a mixture of these. Alternatively, ultraviolet light, KrF lasers, or ArF lasers can also be used. Furthermore, immersion lithography can be employed. Extreme ultraviolet (EUV) light or X-rays can also be used as the light for exposure. Alternatively, an electron beam can be used instead of the light used for exposure.

[0307] In the etching of thin films, dry etching, wet etching, or sandblasting methods can be used.

[0308] First, such as Figure 4A An insulating layer 171 is formed on a substrate (not shown). Next, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 to cover the conductive layers 172 and 179. Next, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0309] As a substrate, a substrate with heat resistance capable of withstanding the degree of subsequent heat treatment can be used. For example, the following can be used: glass substrate; quartz substrate; sapphire substrate; ceramic substrate; organic resin substrate; single-crystal semiconductor substrate or polycrystalline semiconductor substrate made of materials such as silicon or silicon carbide; compound semiconductor substrates such as silicon-germanium; SOI substrate and other semiconductor substrates.

[0310] Next, as Figure 4A As shown, openings leading to the conductive layer 172 are formed in insulating layers 175, 174, and 173. Then, a plug 176 is formed by embedding it into these openings.

[0311] Next, as Figure 4A As shown, conductive films 151f, which will later become conductive layers 151R, 151G, 151B, and 151C, and conductive films 152f, which will later become conductive layers 152R, 152G, 152B, and 152C, are formed on plug 176 and insulating layer 175. Conductive film 151f can be made of, for example, a metallic material. Conductive film 152f can be made of, for example, an oxide comprising one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon.

[0312] Next, as Figure 4A As shown, a resist mask 191 is formed on the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then exposing and developing it.

[0313] Next, as Figure 4B As shown, for example, the conductive films 151f and 152f in areas that do not overlap with the resist mask 191 are removed. Thus, conductive layers 151 and 152 are formed.

[0314] Next, as Figure 4C As shown, the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma.

[0315] Next, as Figure 4DAs shown, an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on conductive layers 152R, 152G, 152B, 152C, and insulating layer 175.

[0316] Insulating film 156f can be inorganic insulating films such as oxide insulating film, nitride insulating film, oxynitride insulating film or oxynitride insulating film, for example, silicon oxynitride can be used.

[0317] Next, as Figure 4E As shown, insulating film 156f is processed to form insulating layers 156R, 156G, 156B and 156C.

[0318] Next, as Figure 5A As shown, an organic compound film 103Rf is formed on conductive layers 152R, 152G, 152B, and insulating layer 175. Furthermore, as... Figure 5A As shown, an organic compound film 103Rf is not formed on the conductive layer 152C.

[0319] Next, as Figure 5A As shown, a sacrificial film 158Rf and a mask film 159Rf are formed.

[0320] By setting a sacrificial film 158Rf on the organic compound film 103Rf, the damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device.

[0321] The sacrificial film 158Rf is a film with high tolerance to the processing conditions of the organic compound film 103Rf, specifically a film with a greater etch selectivity than the organic compound film 103Rf. The mask film 159Rf is a film with a greater etch selectivity than the sacrificial film 158Rf.

[0322] Furthermore, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Rf. The substrate temperatures during the formation of the sacrificial film 158Rf and the mask film 159Rf are typically 100°C or higher and 200°C or lower, preferably 100°C or higher and 150°C or lower, and more preferably 100°C or higher and 120°C or lower. One embodiment of the light-emitting device of the present invention comprises a first compound, thus providing a display device with good display quality even when the heating process is performed at higher temperatures.

[0323] The sacrificial film 158Rf and the mask film 159Rf are preferably films that can be removed by wet etching or dry etching.

[0324] Furthermore, compared to the mask film 159Rf, the sacrificial film 158Rf, which is formed on and in contact with the organic compound film 103Rf, is preferably formed using a formation method that causes less damage to the organic compound film 103Rf. For example, ALD or vacuum evaporation is more preferred than sputtering.

[0325] As the sacrificial film 158Rf and the mask film 159Rf, one or more of the following can be used: metal film, alloy film, metal oxide film, semiconductor film, organic insulating film and inorganic insulating film.

[0326] The sacrificial film 158Rf and the mask film 159Rf can each be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloys containing such metallic materials. Low-melting-point materials such as aluminum or silver are particularly preferred. By using a metallic material capable of blocking ultraviolet light as one or both of the sacrificial film 158Rf and the mask film 159Rf, ultraviolet light irradiation on the organic compound film 103Rf during pattern exposure can be suppressed, thereby inhibiting the degradation of the organic compound film 103Rf, which is therefore preferred.

[0327] In addition, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and silicon-containing indium tin oxide can be used as sacrificial film 158Rf and mask film 159Rf respectively.

[0328] Note that element M (selected from one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) can also be used in place of gallium in the above metal oxides.

[0329] Semiconductor materials such as silicon or germanium are preferred for use as sacrificial film 158Rf and mask film 159Rf, as they have high affinity for semiconductor manufacturing processes. Alternatively, compounds containing the aforementioned semiconductor materials can be used.

[0330] Various inorganic insulating films can be used as sacrificial film 158Rf and mask film 159Rf. In particular, the oxide insulating film has a higher adhesion to the organic compound film 103Rf than the nitrided insulating film, and is therefore preferred.

[0331] Next, as Figure 5AAs shown, a photoresist mask 190R is formed. The photoresist mask 190R can be formed by applying a photosensitive material (photoresist) and then exposing and developing it.

[0332] The resist mask 190R is disposed at a position overlapping with the conductive layer 152R. Preferably, the resist mask 190R is also disposed at a position overlapping with the conductive layer 152C. This can suppress damage to the conductive layer 152C during the manufacturing process of the display device.

[0333] Next, as Figure 5B As shown, a portion of the mask film 159Rf is removed using a resist mask 190R to form a mask layer 159R. The mask layer 159R remains on the conductive layers 152R and 152C. Then, the resist mask 190R is removed. Next, the mask layer 159R is used as a mask (also called a hard mask) to remove a portion of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0334] By using wet etching, damage to the organic compound film 103Rf can be reduced during the processing of the sacrificial film 158Rf and the mask film 159Rf compared to dry etching. When using wet etching, it is preferable to use, for example, an alkaline aqueous solution such as a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), or an acidic aqueous solution such as dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0335] Furthermore, when dry etching is used in the processing of the sacrificial film 158Rf, the degradation of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0336] The resist mask 190R can be removed using the same method as the resist mask 191.

[0337] Next, as Figure 5B As shown, an organic compound film 103Rf is processed to form an organic compound layer 103R. For example, a mask layer 159R and a sacrificial layer 158R are used as a hard mask to remove part of the organic compound film 103Rf, thereby forming the organic compound layer 103R.

[0338] Therefore, as Figure 5B As shown, the conductive layer 152R has a stacked structure of organic compound layer 103R, sacrificial layer 158R, and mask layer 159R remaining on it. In addition, conductive layers 152G and 152B are exposed.

[0339] The processing of the organic compound film 103Rf is preferably performed using anisotropic etching. Anisotropic dry etching is particularly preferred. Alternatively, wet etching can also be used.

[0340] When using dry etching, the degradation of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0341] Alternatively, an oxygen-containing gas can be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed at low power conditions while maintaining a sufficient etching rate. This suppresses damage to the organic compound film 103Rf. Furthermore, it suppresses defects such as the adhesion of reaction products generated during etching.

[0342] When using dry etching, it is preferable to use a gas containing one or more Group 18 elements such as H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, and He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of the above-mentioned gases and oxygen as the etching gas. Oxygen gas may also be used as the etching gas.

[0343] Next, as Figure 6A As shown, an organic compound film 103Gf is formed, which will later become an organic compound layer 103G.

[0344] The organic compound membrane 103Gf can be formed using the same method as that used to form the organic compound membrane 103Rf. Furthermore, the organic compound membrane 103Gf can have the same structure as the organic compound membrane 103Rf.

[0345] Next, as Figure 6A As shown, a sacrificial film 158Gf and a mask film 159Gf are formed sequentially. Then, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those used for the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190G are the same as those used for the resist mask 190R.

[0346] The resist mask 190G is positioned to overlap with the conductive layer 152G.

[0347] Next, as Figure 6B As shown, a portion of the mask film 159Gf is removed using a photoresist mask 190G to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the photoresist mask 190G is removed. Next, using the mask layer 159G as a mask, a portion of the sacrificial film 158Gf is removed, thereby forming a sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G.

[0348] Next, as Figure 6C As shown, an organic compound film 103Bf is formed.

[0349] The organic compound membrane 103Bf can be formed using the same method as that used to form the organic compound membrane 103Rf. Furthermore, the organic compound membrane 103Bf can have the same structure as the organic compound membrane 103Rf.

[0350] Next, as Figure 6C As shown, a sacrificial film 158Bf and a mask film 159Bf are formed sequentially. Then, a resist mask 190B is formed. The materials and forming methods of the sacrificial film 158Bf and the mask film 159Bf are the same as those used for the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190B are the same as those used for the resist mask 190R.

[0351] The resist mask 190B is positioned to overlap with the conductive layer 152B.

[0352] Next, as Figure 6D As shown, a portion of the mask film 159Bf is removed using a photoresist mask 190B to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. Then, the photoresist mask 190B is removed. Next, using the mask layer 159B as a mask, a portion of the sacrificial film 158Bf is removed, thereby forming a sacrificial layer 158B. Next, the organic compound film 103Bf is processed to form an organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as a hard mask to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.

[0353] Therefore, as Figure 6D As shown, the conductive layer 152B has a stacked structure of organic compound layer 103B, sacrificial layer 158B, and mask layer 159B remaining on it. In addition, mask layer 159R and mask layer 159G are exposed.

[0354] Note that the side surfaces of organic compound layers 103R, 103G, and 103B are preferably perpendicular to or substantially perpendicular to the surface to which they are formed. For example, the angle formed between the surface to which they are formed and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0355] As described above, the distance between two adjacent layers in the organic compound layers 103R, 103G, and 103B formed using photolithography can be reduced to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. This distance can be defined, for example, based on the distance between the opposite ends of two adjacent layers in the organic compound layers 103R, 103G, and 103B. Thus, by reducing the distance between the island-shaped organic compound layers, a display device with high resolution and high aperture ratio can be provided. Furthermore, the distance between each first electrode of adjacent light-emitting devices can also be reduced, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Moreover, the distance between each first electrode of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0356] Next, as Figure 7A As shown, it is preferable to remove mask layer 159R, mask layer 159G and mask layer 159B.

[0357] The mask layer removal process can utilize the same methods as the mask film processing process. In particular, by using wet etching, damage to the organic compound layer 103 during mask layer removal can be reduced compared to using dry etching.

[0358] Alternatively, the mask layer can be removed by dissolving it in a polar solvent such as water or alcohol. Examples of alcohols include ethanol, methanol, isopropanol (IPA), or glycerol.

[0359] After removing the mask layer, a drying process can be performed to remove water adsorbed on the surface. For example, heating treatment can be performed in an inactive gas atmosphere or a reduced pressure atmosphere. The heating treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. By using a reduced pressure atmosphere, drying can be performed at a lower temperature, which is preferred.

[0360] Next, as Figure 7B As shown, an inorganic insulating film 125f is formed.

[0361] Next, as Figure 7C As shown, an insulating film 127f, which will later become an insulating layer 127, is formed on an inorganic insulating film 125f.

[0362] The substrate temperature for forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0363] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and a thickness of 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above-mentioned substrate temperature range.

[0364] The inorganic insulating film 125f is preferably formed using the ALD method, for example. The ALD method reduces deposition damage and allows for the deposition of films with high coverage, making it preferred. For example, an alumina film is preferably formed using the ALD method as the inorganic insulating film 125f.

[0365] The insulating film 127f is preferably formed using the wet deposition method described above. The insulating film 127f is preferably formed, for example, by spin coating using a photosensitive material, and more specifically, preferably by using a photosensitive resin composition containing acrylic resin.

[0366] Next, exposure is performed to sensitize a portion of the insulating film 127f with visible light or ultraviolet light. The insulating layer 127 is formed in the region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C.

[0367] By utilizing the area exposed to the insulating film 127f, the width of the insulating layer 127 to be formed later can be controlled. In this embodiment, the insulating layer 127 is processed such that it has a portion overlapping the top surface of the conductive layer 151.

[0368] The light used for exposure preferably has an i-line (wavelength 365 nm). Alternatively, the light used for exposure may also have at least one of a g-line (wavelength 436 nm) and an h-line (wavelength 405 nm).

[0369] Next, as Figure 8A As shown, the exposed areas in the insulating film 127f are removed by developing to form the insulating layer 127a.

[0370] Next, as Figure 8B As shown, an etching process using insulating layer 127a as a mask is performed to remove a portion of the inorganic insulating film 125f, thereby reducing the thickness of a portion of sacrificial layers 158R, 158G, and 158B. This forms an inorganic insulating layer 125 beneath insulating layer 127a. Furthermore, the surfaces of the thinner portions of sacrificial layers 158R, 158G, and 158B are exposed. The etching process using insulating layer 127a as a mask is sometimes referred to as the first etching process.

[0371] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layers 158R, 158G and 158B, the first etching process can be performed in one step, which is preferred.

[0372] When performing dry etching, chlorine-based gases are preferred. One or more of the following chlorine-based gases can be used: Cl2, BCl3, SiCl4, and CCl4. Alternatively, one or more of the following gases can be appropriately added to the chlorine-based gas: oxygen, hydrogen, helium, and argon. By utilizing dry etching, regions with thin sacrificial layers 158R, 158G, and 158B can be formed with excellent in-plane uniformity.

[0373] As a dry etching apparatus, a dry etching apparatus with a high-density plasma source can be used. For example, an inductively coupled plasma (ICP) etching apparatus can be used. Alternatively, a capacitively coupled plasma (CCP) etching apparatus including parallel planar electrodes can be used.

[0374] Furthermore, wet etching is preferred for the first etching process. Compared to dry etching, wet etching reduces damage to the organic compound layers 103R, 103G, and 103B. For example, an alkaline solution can be used for wet etching. For instance, the alkaline solution TMAH can be used when wet etching the alumina film. Additionally, an acidic solution containing fluoride can be used. In this case, wet etching can be performed by coating. Note that when the inorganic insulating film 125f is deposited using the same material as the sacrificial layers 158R, 158G, and 158B, the above etching process can be performed in a single step, which is therefore preferred.

[0375] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped when the thickness decreases. In this way, by leaving the corresponding sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, damage to the organic compound layers 103R, 103G, and 103B can be prevented in subsequent processing steps.

[0376] Next, the entire substrate is preferably exposed to visible or ultraviolet light onto the insulating layer 127a. The energy density of this exposure is preferably greater than 0 mJ / cm². 2 And it is 800mJ / cm 2 Below, greater than 0 mJ / cm is preferred. 2 And it is 500mJ / cm 2 The following applies. By performing this exposure after development, the transparency of the insulating layer 127a can sometimes be improved. Additionally, the substrate temperature required for the subsequent heat treatment to deform the insulating layer 127a into a conical shape can sometimes be reduced.

[0377] Here, by having an oxygen-blocking insulating layer (e.g., an aluminum oxide film) as the sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B, the diffusion of oxygen into the organic compound layer 103R, organic compound layer 103G, and organic compound layer 103B can be reduced.

[0378] Next, a heat treatment (also known as post-baking) is performed. This heat treatment deforms the insulating layer 127a into an insulating layer 127 with a tapered shape on its sides. Figure 8C The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 130°C or lower. The heating atmosphere can be either atmospheric or an inactive gas atmosphere. Furthermore, the heating atmosphere can be either atmospheric or a reduced-pressure atmosphere. This improves the adhesion between the insulating layer 127 and the inorganic insulating layer 125, and also improves the corrosion resistance of the insulating layer 127.

[0379] In the first etching process, by not completely removing the sacrificial layers 158R, 158G, and 158B, leaving a reduced thickness of the remaining sacrificial layers 158R, 158G, and 158B, damage and deterioration of the organic compound layers 103R, 103G, and 103B can be prevented during the heat treatment. This improves the reliability of the light-emitting device.

[0380] Next, as Figure 9A As shown, by using the insulating layer 127 as a mask, an etching process is performed to remove a portion of the sacrificial layers 158R, 158G, and 158B. This creates an opening in each of the sacrificial layers 158R, 158G, and 158B, exposing the top surfaces of the organic compound layers 103R, 103G, 103B, and the conductive layer 152C. Note that this etching process is sometimes referred to below as a second etching process.

[0381] The ends of the inorganic insulating layer 125 are covered by the insulating layer 127. Additionally, Figure 9A An example is shown where a portion of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered by the insulating layer 127 and the tapered portion formed by the second etching process is exposed.

[0382] Furthermore, wet etching is preferably used for the second etching process. Compared to dry etching, wet etching reduces damage to the organic compound layers 103R, 103G, and 103B. For example, wet etching can be performed using an alkaline or acidic solution. To prevent dissolution of the organic compound layer 103, an aqueous solution is preferred.

[0383] Next, as Figure 9B As shown, a common electrode (second electrode 102) is formed on organic compound layer 103R, organic compound layer 103G, organic compound layer 103B, conductive layer 152C, and insulating layer 127. The common electrode (second electrode 102) can be formed by methods such as sputtering or vacuum evaporation.

[0384] Next, as Figure 9C As shown, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by methods such as vacuum evaporation, sputtering, CVD, or ALD. The protective layer 131 can also serve as a capping layer; by providing a capping layer, the light extraction efficiency can be improved when the light-emitting device is a top-emitting type. For example, by using a material with an ordinary refractive index (no) of 1.90 or higher at a wavelength of 450 nm, a material with an ordinary refractive index (no) of 1.80 or higher at a wavelength of 520 nm, or a material with an ordinary refractive index (no) of 1.75 or higher at a wavelength of 630 nm, total internal reflection of light from the organic compound layer 103 in the capping layer can be prevented, thereby improving the light extraction efficiency. Furthermore, the capping layer can also serve as a protective layer.

[0385] Furthermore, to prevent the light-emitting device from being exposed to the atmosphere before being assembled into the display device or light-emitting device, a sealing film may be provided on the protective layer 131. This sealing film can be made of a material that is not easily permeable to impurities such as water. Specifically, it is preferable to use the ALD method to provide an alumina film. Note that to prevent the light-emitting device from being exposed to the atmosphere before the sealing film is provided after the formation of the protective layer 131, it is preferable to move the light-emitting device into the ALD device in a glove box under a nitrogen atmosphere after the formation of the protective layer 131. At this time, the oxygen concentration in the glove box is preferably 100 ppm or less, more preferably 10 ppm or less, and even more preferably 1 ppm or less.

[0386] Next, the substrate 120 is bonded to the protective layer 131 using the resin layer 122, thereby manufacturing a display device. As described above, in one aspect of the manufacturing method of the display device according to the present invention, the insulating layer 156 is provided in such a way that it overlaps with the side surface of the conductive layer 151, and the conductive layer 152 is formed in such a way that it covers the conductive layer 151 and the insulating layer 156. This can improve the yield of the display device and suppress the occurrence of defects. In addition, by providing a microlens array on the protective layer 131 or the sealing film before bonding the substrate 120, and then bonding the substrate 120, a display device having a microlens array can also be manufactured.

[0387] As described above, in one embodiment of the manufacturing method of the display device of the present invention, the island-shaped organic compound layer 103R, island-shaped organic compound layer 103G, and island-shaped organic compound layer 103B are not formed using a high-precision metal mask, but are formed by depositing a film on one surface and then processing it, thus allowing the island-shaped layers to be formed with a uniform thickness. Furthermore, a high-resolution display device or a display device with a high aperture ratio can be achieved. In addition, even with high resolution or aperture ratio and extremely short distances between sub-pixels, contact between organic compound layers 103R, organic compound layer 103G, and organic compound layer 103B in adjacent sub-pixels can be suppressed. Therefore, leakage current between sub-pixels can be suppressed. Thus, crosstalk can be prevented to achieve a display device with extremely high contrast. Furthermore, even display devices including tandem light-emitting devices manufactured using photolithography can provide display devices with excellent characteristics.

[0388] (Implementation Method 5) This embodiment describes a display device according to one aspect of the present invention.

[0389] The display device in this embodiment can be a high-definition display device. Therefore, for example, the display device in this embodiment can be used as the display unit of information terminal devices (wearable devices) such as watch-type and bracelet-type devices, as well as the display unit of wearable devices that can be worn on the head, such as head-mounted displays (HMDs) for VR devices and glasses-type AR devices.

[0390] Furthermore, the display device in this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device in this embodiment can be used, for example, as a display unit for devices such as: electronic devices with large screens, such as television sets, desktop or laptop personal computers, monitors for computers, digital signage, and large game machines such as pinball machines; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game consoles; portable information terminals; and sound reproduction devices.

[0391] [Display Module] Figure 10AThis is a perspective view of display module 280. Display module 280 includes display device 100A and FPC 290. Note that the display device included in display module 280 is not limited to display device 100A, but can be any of display devices 100B to 100E, which will be described later.

[0392] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display section 281. The display section 281 is not an image display area in the display module 280, but rather an area where light from each pixel disposed in the pixel section 284 can be seen.

[0393] Figure 10B This is a three-dimensional schematic diagram of the structure on one side of the substrate 291. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291. Furthermore, a terminal section 285 for connecting to the FPC 290 is provided on the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 is electrically connected to the circuit section 282 via a wiring section 286 composed of multiple wirings.

[0394] The pixel unit 284 includes a plurality of pixels 284a arranged periodically. Figure 10B The right side shows a magnified view of pixel 284a. Pixel 284a can adopt various structures described in the above embodiments.

[0395] The pixel circuit section 283 includes a plurality of pixel circuits 283a arranged periodically.

[0396] A pixel circuit 283a controls the driving of multiple elements included in a pixel 284a.

[0397] The circuit section 282 includes circuitry for driving each pixel circuit 283a of the pixel circuit section 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. Furthermore, it may include at least one of an arithmetic circuit, a storage circuit, and a power supply circuit.

[0398] The FPC290 is used for wiring to supply video signals or power potentials to the circuit section 282 from the outside. Additionally, ICs can be mounted on the FPC290.

[0399] The display module 280 can adopt a structure in which one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, so that the display section 281 can have an extremely high aperture ratio (effective display area ratio).

[0400] The aforementioned display module 280 has extremely high resolution, making it suitable for use in VR devices such as HMDs or glasses-type AR devices. For example, in a structure where the display section of the display module 280 is viewed through a lens, because the display module 280 has an extremely high-resolution display section 281, even if the user magnifies the display section with a lens, the pixels are not visible, thereby achieving a highly immersive display. Furthermore, the display module 280 is not limited to this; it can also be applied to electronic devices with smaller display sections.

[0401] [Display Device 100A] Figure 11A The display device 100A shown includes a substrate 301, light-emitting devices 130R, 130G, 130B, a capacitor 240, and a transistor 310.

[0402] Substrate 301 is equivalent to Figure 11A and Figure 11B The substrate 291 is used in the transistor 310. The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 includes a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 serves as the gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and serves as the gate insulating layer. The low-resistance region 312 is a region in the substrate 301 doped with impurities and serves as the source or drain. The insulating layer 314 covers the sides of the conductive layer 311.

[0403] In addition, a component separation layer 315 is provided between two adjacent transistors 310 in a manner embedded in the substrate 301.

[0404] In addition, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0405] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 is used as one electrode in the capacitor 240, the conductive layer 245 is used as the other electrode in the capacitor 240, and the insulating layer 243 is used as the dielectric of the capacitor 240.

[0406] A conductive layer 241 is disposed on an insulating layer 261 and embedded within an insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain terminals of the transistor 310 via a connector 271 embedded in the insulating layer 261. An insulating layer 243 is disposed to cover the conductive layer 241. A conductive layer 245 is disposed in the region where it overlaps with the conductive layer 241, separated by the insulating layer 243.

[0407] An insulating layer 255 is provided to cover the capacitor 240, and an insulating layer 174 is provided on the insulating layer 255. Light-emitting devices 130R, 130G, and 130B are provided on the insulating layer 175. Insulators are provided in the areas between adjacent light-emitting devices.

[0408] An insulating layer 156R is provided with a region overlapping the side surface of conductive layer 151R, an insulating layer 156G is provided with a region overlapping the side surface of conductive layer 151G, and an insulating layer 156B is provided with a region overlapping the side surface of conductive layer 151B. Furthermore, a conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R, a conductive layer 152G is provided to cover conductive layer 151G and insulating layer 156G, and a conductive layer 152B is provided to cover conductive layer 151B and insulating layer 156B. A sacrificial layer 158R is located on organic compound layer 103R, a sacrificial layer 158G is located on organic compound layer 103G, and a sacrificial layer 158B is located on organic compound layer 103B.

[0409] Conductive layers 151R, 151G, and 151B are electrically connected to one of the source and drain terminals of transistor 310 via plugs 256 embedded in insulating layers 243, 255, 174, and 175, conductive layer 241 embedded in insulating layer 254, and plugs 271 embedded in insulating layer 261. Various conductive materials can be used as plugs.

[0410] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A resin layer 122 is attached to the protective layer 131 to bond the substrate 120. Detailed descriptions of the components of the light-emitting devices 130 and the substrate 120 can be found in Embodiment 4. The substrate 120 corresponds to... Figure 10A Substrate 292.

[0411] Figure 11B Show Figure 11A A modified example of the display device 100A shown. Figure 11B The display device shown includes a color layer 132R, a color layer 132G, and a color layer 132B, and a light-emitting device 130 has a region overlapping one of the color layers 132R, 132G, and 132B. Figure 11B In the display device shown, the light-emitting device 130 can emit white light, for example. In addition, for example, the color layer 132R, color layer 132G and color layer 132B can transmit red light, green light and blue light, respectively.

[0412] [Display device 100B] Figure 12 A perspective view of the display device 100B is shown. Figure 13 A cross-sectional view of the display device 100C is shown.

[0413] The display device 100B has a structure that bonds substrate 352 and substrate 351. Figure 12 In the image, substrate 352 is represented by a dashed line.

[0414] The display device 100B includes a pixel unit 177, a connection unit 140, a circuit 356, and wiring 355, etc. Figure 12 An example is shown where display device 100B is equipped with IC354 and FPC353. Therefore, it is also possible to... Figure 12 The structure shown is referred to as a display module including a display device 100B, an IC (integrated circuit), and an FPC. Here, the substrate of the display device on which connectors such as the FPC are mounted, or the substrate on which the IC is mounted, is referred to as the display module.

[0415] The connecting portion 140 is disposed on the outer side of the pixel portion 177. There may be one or more connecting portions 140. In the connecting portion 140, the common electrode of the light-emitting device is electrically connected to the conductive layer, and a potential can be supplied to the common electrode.

[0416] For example, a scan line drive circuit can be used as circuit 356.

[0417] Wiring 355 has the function of supplying signals and power to pixel unit 177 and circuit 356. The signals and power are input to wiring 355 from the outside via FPC 353 or from IC 354.

[0418] Figure 12 An example is shown where IC 354 is mounted on substrate 351 using methods such as COG (Chip On Glass) or COF (Chip On Film). IC 354 can be, for example, an IC including scan line drive circuitry or signal line drive circuitry. Note that the display device 100B and display module do not necessarily need to have an IC mounted on them. Alternatively, the IC can be mounted on an FPC using a COF method, for example.

[0419] Figure 13 As shown in display device 100C Figure 12 An example of a cross-section of a display device 100B including a portion of an area of ​​FPC 353, a portion of circuitry 356, a portion of pixel portion 177, a portion of connection portion 140, and a portion of an area including an end portion.

[0420] [Display Device 100C] Figure 13The display device 100C shown includes transistors 201 and 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc., between substrates 351 and 352.

[0421] For details on light-emitting devices 130R, 130G, and 130B, please refer to Embodiment 4.

[0422] Light-emitting device 130R includes a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. Light-emitting device 130G includes a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. Light-emitting device 130B includes a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B.

[0423] The conductive layer 224R is connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. The end of the conductive layer 151R is located outside the end of the conductive layer 224R. The insulating layer 156R is provided such that it has a region in contact with the side of the conductive layer 151R, and the conductive layer 152R is provided such that it covers the conductive layer 151R and the insulating layer 156R.

[0424] The conductive layers 224G, 151G, 152G, and 156G in the light-emitting device 130G, and the conductive layers 224B, 151B, 152B, and 156B in the light-emitting device 130B, are the same as the conductive layers 224R, 151R, 152R, and 156R in the light-emitting device 130R, so detailed descriptions are omitted.

[0425] The conductive layers 224R, 224G, and 224B have recesses formed in a manner that cover the openings provided in the insulating layer 214. These recesses are filled with layer 128.

[0426] Layer 128 has the function of filling the recesses of conductive layers 224R, 224G, and 224B to planarize them. Conductive layers 151R, 151G, and 151B, which are electrically connected to conductive layers 224R, 224G, and 224B, are disposed on conductive layers 224R, 224G, and 224B. Therefore, the area overlapping the recesses of conductive layers 224R, 224G, and 224B can also be used as a light-emitting area, which can improve the pixel aperture ratio.

[0427] Layer 128 can also be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be suitably used for layer 128. In particular, layer 128 is preferably formed using an insulating material, and more preferably using an organic insulating material. Layer 128 can, for example, use the organic insulating material described above that can be used in insulating layer 127.

[0428] A protective layer 131 is provided on light-emitting devices 130R, 130G, and 130B. The protective layer 131 and the substrate 352 are bonded together by an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. The light-emitting device 130 can be sealed using a solid sealing structure or a hollow sealing structure, etc. Figure 13 In this configuration, the space between substrates 352 and 351 is filled with adhesive layer 142, thus employing a solid-sealed structure. Alternatively, an inactive gas (such as nitrogen or argon) can be used to fill the space, resulting in a hollow-sealed structure. In this case, adhesive layer 142 can also be positioned so as not to overlap with the light-emitting device. Furthermore, a resin different from that used for the frame-shaped adhesive layer 142 can be used to fill the space.

[0429] Figure 13 An example is shown below: the connecting portion 140 includes a conductive layer 224C obtained by processing a conductive film identical to conductive layers 224R, 224G, and 224B; a conductive layer 151C obtained by processing a conductive film identical to conductive layers 151R, 151G, and 151B; and a conductive layer 152C obtained by processing a conductive film identical to conductive layers 152R, 152G, and 152B. Furthermore, Figure 13 An example is shown in which the insulating layer 156C is disposed in such a manner that it includes a region that overlaps with the side of the conductive layer 151C.

[0430] The display device 100C has a top-emitting structure. The light-emitting device emits light to one side of the substrate 352. The substrate 352 is preferably made of a material with high transmittance to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0431] Insulating layers 211, 213, 215, and 214 are sequentially disposed on substrate 351. A portion of insulating layer 211 serves as the gate insulating layer for each transistor. A portion of insulating layer 213 serves as the gate insulating layer for each transistor. Insulating layer 215 is disposed to cover the transistor. Insulating layer 214 is disposed to cover the transistor and serves as a planarization layer. Furthermore, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor; there can be one or more.

[0432] Inorganic insulating films are preferably used as insulating layers 211, 213 and 215.

[0433] The insulating layer 214 used as the planarization layer is preferably an organic insulating layer.

[0434] Transistor 201 and transistor 205 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as source and drain; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate.

[0435] A connection portion 204 is provided in a region of substrate 351 that does not overlap with substrate 352. In the connection portion 204, the source or drain electrode of transistor 201 is electrically connected to FPC 353 via conductive layer 166 and connection layer 242. An example is shown where conductive layer 166 has a stacked structure comprising a conductive film formed by processing conductive films identical to conductive layers 224R, 224G, and 224B; a conductive film formed by processing conductive films identical to conductive layers 151R, 151G, and 151B; and a conductive film formed by processing conductive films identical to conductive layers 152R, 152G, and 152B. Conductive layer 166 is exposed on the top surface of connection portion 204. Therefore, connection portion 204 can be electrically connected to FPC 353 via connection layer 242.

[0436] Preferably, a light-shielding layer 157 is provided on the surface of the substrate 352 on the substrate 351 side. The light-shielding layer 157 can be provided between adjacent light-emitting devices, in the connection portion 140, and in the circuit 356, etc. In addition, various optical components can be arranged on the outer side of the substrate 352.

[0437] Substrate 351 and substrate 352 may each be made of a material that can be used in substrate 120.

[0438] As the adhesive layer 142, a material suitable for the resin layer 122 can be used.

[0439] As the connecting layer 242, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP) can be used.

[0440] [Display Device 100D] Figure 14 The display device 100D shown is Figure 14 The main difference between the display device 100C and the display device 100D is that the display device 100D is a bottom-emitting type display device.

[0441] The light-emitting device emits light onto one side of the substrate 351. The substrate 351 is preferably made of a material with high transmittance to visible light. On the other hand, there are no restrictions on the transmittance of the material used for the substrate 352.

[0442] Preferably, a light-shielding layer 317 is formed between the substrate 351 and the transistor 201, and between the substrate 351 and the transistor 205. Figure 14 In the example shown, a light-shielding layer 317 is disposed on the substrate 351, an insulating layer 153 is disposed on the light-shielding layer 317, and transistors 201, 205, etc. are disposed on the insulating layer 153.

[0443] The light-emitting device 130R includes a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0444] The light-emitting device 130B includes a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0445] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are all made of materials with high transmittance to visible light. The second electrode 102 is preferably made of a material that reflects visible light.

[0446] Note that, although Figure 14 The light-emitting device 130G is not shown in the figure, but it is also provided.

[0447] in addition, Figure 14 Examples are shown where the top surface of layer 128 has a flat portion, but there are no particular restrictions on the shape of layer 128.

[0448] [Display Device 100D2] The display device 100D2 shown in Figure 15 is related to Figure 14 This is an example of a bottom-emitting display device different from the display device 100D shown. The display device 100D2 differs from the display device 100D in that the former includes an organic resin layer 180. Note that details are sometimes omitted in the accompanying drawings. Figure 14 For details regarding symbols representing the same constituent elements, please refer to [link / reference]. Figure 14 The records.

[0449] in addition, Figure 15B The diagram shows a top view layout of pixels 178 (pixels 178a and 178b) including sub-pixels 110 (sub-pixels 110R, 110G, 110B, and 110W). Figure 15CA top view of the organic resin layer 180 in the region forming sub-pixels 110R and 110W included in pixel 178 is shown. Furthermore, the width between the light-shielding layers 317 is the width 110Rw in the light-emitting region of sub-pixel 110R.

[0450] like Figure 15A As shown, the organic resin layer 180 is disposed on the insulating layer 214. (As indicated...) Figure 15A The area enclosed by dotted lines and Figure 15C As shown, the organic resin layer 180 includes, at least in the region forming the sub-pixel, a recess 181 (recess 181a, recess 181b) with a curved surface. Alternatively, the recess 181 can be positioned outside the light-emitting region, similar to recess 181c. By providing the recess 181c, light emitted in the region overlapping the light-shielding layer 317, or light entering the region overlapping the light-shielding layer 317, is refracted and can be extracted from the light-emitting region, thereby improving luminous efficiency.

[0451] Multiple recesses 181 can also be formed in a matrix. Recesses 181a and 181b can be in contact with each other, or there can be a plane between them.

[0452] Additionally, Figure 15 shows that the top surface of the recess is hexagonal ( Figure 15C The cross-sectional shape is semi-circular. Figure 15A Examples of this type of shape can be used as needed. For instance, the top surface shape of the concave portion can be a triangle, a quadrilateral (including a rectangle and a square), a pentagon, or other polygons with rounded corners, an ellipse, or a circle.

[0453] As the organic resin layer 180, an insulating layer containing organic materials can be used. For example, as the organic resin layer 180, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be used. Furthermore, as the organic resin layer 180, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used.

[0454] Furthermore, a photosensitive resin can be used as the organic resin layer 180. A photoresist can also be used as the photosensitive resin. The photosensitive resin can be either a positive or negative material.

[0455] The organic resin layer 180 may also contain materials that absorb visible light. For example, the organic resin layer 180 itself may be composed of materials that absorb visible light, and the organic resin layer 180 may also contain pigments that absorb visible light. As the organic resin layer 180, for example, resins that can be used as color filters that allow red, blue, or green light to pass through while absorbing other colors of light; or resins that contain carbon black as pigments and are used as black matrices; etc.

[0456] Furthermore, the organic resin layer 180 includes a first electrode 101 (first electrode 101R and first electrode 101W), and the first electrode 101 includes an organic compound layer 103. The ends of the first electrode 101 and the organic compound layer 103 may be covered by an insulating layer 127.

[0457] Furthermore, the first electrode 101 formed on the organic resin layer 180 also has a recess along the recess of the organic resin layer 180. Similarly, the organic compound layer 103 formed on the first electrode 101 also has a recess along the recess of the first electrode 101. Furthermore, the common layer 104 formed on the organic compound layer 103 also has a recess along the recess of the organic compound layer 103. Additionally, the second electrode 102 formed on the common layer 104 also has a recess along the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 have an overlapping structure.

[0458] Furthermore, a common layer 104 is included on the organic compound layer 103 and the insulating layer 127, and a second electrode 102 is included on the common layer 104. A protective layer 131 is provided on the second electrode 102, which is bonded to the substrate 352 through an adhesive layer 142.

[0459] Note that although light-emitting devices 130G and 130B are not shown in Figure 15, they are still provided.

[0460] In the light-emitting device of one aspect of the present invention, which includes an organic resin layer 180, as described in Embodiment 1, the organic compound layer 103 contains any one of the organic compounds represented by general formulas (G1) to (G7). Due to the inseparable interaction between the organic resin layer 180 and the organic semiconductor device using the organic compounds of the present invention, an organic semiconductor device with high luminous efficiency can be provided, as well as an organic semiconductor device with high reliability, low driving voltage, and low power consumption can be provided.

[0461] [Display Device 100E] Figure 16 The display device 100E shown is Figure 13The main difference between the display device 100E and the display device 100C is that the display device 100E includes a color layer 132R, a color layer 132G, and a color layer 132B.

[0462] In the display device 100E, the light-emitting device 130 has a region overlapping one of the coloring layers 132R, 132G, and 132B. The coloring layers 132R, 132G, and 132B can be disposed on a surface of the substrate 352 on one side of the substrate 351. The ends of the coloring layers 132R, 132G, and 132B can overlap the light-shielding layer 157.

[0463] In the display device 100E, the light-emitting device 130 can emit white light, for example. Furthermore, for example, color layers 132R, 132G, and 132B can transmit red, green, and blue light, respectively. Alternatively, the display device 100E may also employ a structure in which color layers 132R, 132G, and 132B are disposed between the protective layer 131 and the adhesive layer 142.

[0464] [Display Device 100E2] The display device 100E2 shown in Figure 17 is... Figure 16 In a modified example of the display device 100E shown, microlenses 182 are present on color layers 132R, 132G, and 132B. Note that in the accompanying drawings, the details of the microlenses 182 are sometimes omitted. Figure 16 For details regarding symbols representing the same constituent elements, please refer to [link / reference]. Figure 16 The records.

[0465] in addition, Figure 17B The diagram shows a top view layout of pixels 178 (pixels 178a and 178b) including sub-pixels 110 (sub-pixels 110R, 110G, and 110B). Figure 17C A top view is shown of the microlens 182 formed in the region containing sub-pixels 110R and 110G, which are included in pixel 178. Furthermore, the region where the common electrode 155 contacts the organic compound layer 103 corresponds to the width 110Gw of the light-emitting region of sub-pixel 110G.

[0466] exist Figure 17A In the display device 100E2 shown, a planarization film 143 is provided on the protective layer 131, and color layers 132R, 132G, and 132B are provided on the planarization film 144. The planarization film 144 is provided to cover the color layers 132R, 132G, and 132B. A microlens 182 is provided on the planarization film 144.

[0467] In addition, such as Figure 17C As shown, microlenses 182 can be set in each sub-pixel of the region where sub-pixels are formed.

[0468] in addition, Figure 17C The illustration shows an example where the top surface of the microlens 182 is hexagonal, but other shapes can also be used as needed. For example, the top surface shape of this recess can be a triangle, a quadrilateral (including a rectangle and a square), a pentagon, or other polygons with rounded corners, an ellipse, or a circle.

[0469] The microlens 182 can be formed using the same material as the organic resin layer 180.

[0470] In the light-emitting device of one aspect of the present invention, including the microlens 182, as shown in Embodiment 1, the organic compound layer 103 contains any of the organic compounds represented by general formulas (G1) to (G7). Due to the inseparable effect of the microlens 182 and the organic semiconductor device using the organic compounds of the present invention, an organic semiconductor device with high luminous efficiency can be provided, and an organic semiconductor device suitable for portable displays with high reliability, low driving voltage, and low power consumption can be provided.

[0471] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, where multiple structural examples are shown in one embodiment in this specification, these structural examples can be appropriately combined.

[0472] (Implementation Method 6) This embodiment describes an electronic device according to one aspect of the present invention.

[0473] The electronic device of this embodiment includes a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention features low power consumption and high reliability. Therefore, it can be used in the display units of various electronic devices.

[0474] As electronic devices, in addition to large-screen electronic devices such as television sets, desktop or laptop personal computers, monitors for computers, digital signage, and large game machines such as pinball machines, other examples include digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and sound reproduction devices.

[0475] Reference Figures 18A to 18D This illustrates an example of a wearable device that can be worn on the head.

[0476] Figure 18A The electronic device 700A shown and Figure 18BThe electronic devices 700B shown include a pair of display panels 751, a pair of frames 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical components 753, a frame 757, and a pair of nose pads 758.

[0477] The display panel 751 can be used with a display device according to one aspect of the present invention. Thus, a highly reliable electronic device can be realized.

[0478] Both electronic devices 700A and 700B can project the image displayed by the display panel 751 onto the display area 756 in the optical component 753. Because the optical component 753 is light-transmitting, the user can see the image displayed in the display area by overlapping the image seen through the optical component 753.

[0479] As an imaging unit, a camera capable of capturing images from the front can also be installed on electronic devices 700A and 700B. Furthermore, by installing accelerometer sensors such as gyroscopes in electronic devices 700A and 700B, the orientation of the user's head can be detected, and an image corresponding to that orientation can be displayed on the display area 756.

[0480] The communications unit includes a wireless communication device through which video signals can be supplied, for example. Furthermore, in addition to or in addition to the wireless communication device, a connector capable of connecting cables supplying video signals and power potential may also be included.

[0481] In addition, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly or via wired means, or both.

[0482] The frame 721 can also be equipped with a touch sensor module.

[0483] Various touch sensors can be used as touch sensor modules. For example, capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, or optical sensors can be employed. In particular, capacitive or optical sensors are preferred for use in touch sensor modules.

[0484] Figure 18C The electronic device 800A shown and Figure 18D The electronic devices 800B shown include a pair of display units 820, a frame 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0485] The display unit 820 can be equipped with a display device according to one aspect of the present invention. This allows for the realization of a highly reliable electronic device.

[0486] The display unit 820 is located inside the housing 821 in a position visible through the lens 832. Furthermore, by displaying different images on each of the pair of display units 820, three-dimensional display utilizing parallax can be achieved.

[0487] Electronic devices 800A and 800B preferably have a mechanism in which the left and right positions of the lens 832 and the display unit 820 can be adjusted so that the lens 832 and the display unit 820 are in the most suitable position according to the position of the user's eyes.

[0488] Users can use the mounting unit 823 to wear electronic device 800A or electronic device 800B on their heads.

[0489] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras can be set to accommodate various viewing angles such as telephoto and wide-angle.

[0490] The electronic device 800A may also include a vibration mechanism used as a bone conduction headphone.

[0491] Electronic devices 800A and 800B may also include input terminals. Cables supplying image signals from image output devices and power for charging batteries installed in the electronic devices can be connected to the input terminals.

[0492] The electronic device of one embodiment of the present invention may also have the function of wireless communication with the earphone 750.

[0493] In addition, electronic devices may also include an earphone unit. Figure 18B The illustrated electronic device 700B includes an earphone unit 727. A portion of the wiring connecting the earphone unit 727 and the control unit may also be configured inside the housing 721 or the mounting unit 723.

[0494] same, Figure 18D The illustrated electronic device 800B includes an earphone unit 827. For example, a structure in which the earphone unit 827 and the control unit 824 are connected in a wired manner can be adopted.

[0495] Thus, as an embodiment of the present invention, both eyeglass type (electronic device 700A and electronic device 700B, etc.) and goggle type (electronic device 800A and electronic device 800B, etc.) are preferred electronic devices.

[0496] Figure 19A The electronic device 6500 shown is a portable information terminal device that can be used as a smartphone.

[0497] Electronic device 6500 includes a frame 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0498] The display unit 6502 can use a display device according to one aspect of the present invention. Therefore, a highly reliable electronic device can be realized.

[0499] Figure 19B It is a cross-sectional schematic diagram of one end of the microphone 6506, including the frame 6501.

[0500] A light-transmitting protective component 6510 is provided on one side of the display surface of the frame 6501. The space surrounded by the frame 6501 and the protective component 6510 contains a display panel 6511, an optical component 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc.

[0501] The display panel 6511, optical component 6512, and touch sensor panel 6513 are fixed to the protective component 6510 using an adhesive layer (not shown).

[0502] In the area outside the display unit 6502, a portion of the display panel 6511 is folded, and this folded portion is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals disposed on a printed circuit board 6517.

[0503] The display panel 6511 can be used with a display device according to one aspect of the present invention. This allows for the realization of an extremely lightweight electronic device. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while minimizing the thickness of the electronic device. Additionally, by folding a portion of the display panel 6511 to provide a connection portion with the FPC 6515 on the back of the pixel section, a narrow-bezel electronic device can be achieved.

[0504] Figure 19C An example of a television device is shown. In the television device 7100, a display unit 7000 is assembled in a frame 7171. The structure in which the frame 7171 is supported by a bracket 7173 is shown here.

[0505] The display unit 7000 can use a display device according to one aspect of the present invention. This allows for the realization of a highly reliable electronic device.

[0506] It can be operated using the operating switch provided in the housing 7171 and the separately provided remote control 7151. Figure 19C The operation of the television device 7100 shown.

[0507] Figure 19D An example of a notebook computer is shown. The notebook computer 7200 includes a chassis 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214, etc. A display unit 7000 is assembled in the chassis 7211.

[0508] The display unit 7000 can use a display device according to one aspect of the present invention. This allows for the realization of a highly reliable electronic device.

[0509] Figure 19E and Figure 19F This shows an example of digital signage that can be used in shop windows and display cases.

[0510] Figure 19E The digital sign 7300 shown includes a housing 7301, a display unit 7000, and a speaker 7303. It may also include LEDs, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0511] Figure 19F A digital sign 7400 is shown mounted on a cylindrical column 7401. The digital sign 7400 includes a display section 7000 disposed along the curved surface of the column 7401.

[0512] exist Figure 19E and Figure 19F In this embodiment, a display device according to one aspect of the present invention can be used in the display unit 7000. This allows for the realization of a highly reliable electronic device.

[0513] The larger the display unit (7000), the more information it can provide at once. A larger display unit (7000) is also more likely to attract attention, which can improve the effectiveness of advertising.

[0514] In particular, when using a display device according to one aspect of the present invention... Figure 19E and Figure 19F In cases such as advertising using the digital signage 7400 shown, employing a light-transmitting panel can increase the degree of creative freedom. For example, by adjusting the distance between pixel electrodes using wiring and support members formed from a conductive film that transmits visible light, a light-transmitting display device can be manufactured. Furthermore, by using tempered glass or the like to manufacture the pillar 7401, the pillar 7401 can also be used as a display case.

[0515] Furthermore, in addition to the wiring and support members formed by a conductive film that transmits visible light, as described above, the series-connected light-emitting device of one aspect of the present invention can also improve the brightness of each pixel. That is, even with a reduced aperture ratio, good display performance can be achieved, thus improving the light transmittance of the display portion of the display device. Therefore, the above-described display device is preferred as a light-transmitting display device according to one aspect of the present invention.

[0516] like Figure 19E and Figure 19F As shown, the digital signage 7300 or digital signage 7400 preferably can be linked with the user's smartphone or other information terminal device 7311 or information terminal device 7411 via wireless communication.

[0517] Figures 20A to 20G The electronic device shown includes a frame 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), a connection terminal 9006, a sensor 9007 (which has the function of measuring the following factors: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0518] Figures 20A to 20G The electronic device shown has various functions. For example, it may have the following functions: displaying various information (static images, dynamic images, and text images, etc.) on a display unit; touch panel function; displaying calendar, date, or time, etc.; control and processing via various software (programs); wireless communication function; reading and processing programs or data stored in a storage medium; etc.

[0519] The following is a detailed explanation. Figures 20A to 20G The electronic device shown.

[0520] Figure 20A This is a perspective view showing a portable information terminal 9171. The portable information terminal 9171 can be used, for example, as a smartphone. Note that a speaker 9003, a connection terminal 9006, or a sensor 9007 may also be included in the portable information terminal 9171. Furthermore, as a portable information terminal 9171, text or image information can be displayed on multiple surfaces. Figure 20AThe image shows an example displaying three icons 9050. Furthermore, information 9051, shown as a dashed rectangle, can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of received emails, SNS messages, phone calls, etc.; the subject line of the email or SNS message; the sender's name; the date; the time; remaining battery level; and radio wave strength. Alternatively, icons 9050 can be displayed in the same location where information 9051 is displayed.

[0521] Figure 20B This is a perspective view showing a portable information terminal 9172. The portable information terminal 9172 has the function of displaying information on three or more surfaces of the display unit 9001. Here, examples are shown where information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, when the portable information terminal 9172 is placed in a jacket pocket, the user can view information 9053 displayed in a position seen from above the portable information terminal 9172.

[0522] Figure 20C This is a perspective view of a tablet terminal 9173. The tablet terminal 9173 can, for example, execute various application software such as mobile phone, email, and article reading and editing, music playback, network communication, and computer games. The tablet terminal 9173 includes a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the frame 9000, and operation keys 9005 for use as buttons on the left side of the frame 9000, and a connection terminal 9006 on the bottom surface.

[0523] Figure 20DThis is a perspective view showing a watch-type portable information terminal 9200. The portable information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The portable information terminal 9200 may also include operation keys 9005 as operation buttons on the left side of the frame 9000 and a sensor 9007 on the bottom surface. Furthermore, as an example, a curved bracelet-type frame 9000 is shown, but a wearable structure combining the frame 9000 and a strap is also possible. Furthermore, the display surface of the display unit 9001 is curved, allowing display along its curved surface. Furthermore, the power storage device 9004 may also have a shape that curves along the frame 9000. Additionally, the power storage device 9004 is flexible and can bend according to changes in shape when worn or removed. A charging control IC connected to the power storage device 9004 may also be included. Furthermore, the portable information terminal 9200 can perform hands-free calls, for example, by communicating with a headset capable of wireless communication. Furthermore, the portable information terminal 9200 can wirelessly transmit data with other information terminals and be charged via wireless power supply. In addition, data transmission and charging can also be performed via wired connection by setting a connection terminal 9006 in the housing 9000.

[0524] Figures 20E to 20G This is a perspective view showing the foldable portable information terminal 9201. Additionally, Figure 20E This is a 3D view of the portable information terminal 9201 in its unfolded state. Figure 20G It is a 3D image of the folded state. Figure 20F From Figure 20E status and Figure 20G The portable information terminal 9201 is a three-dimensional representation of the state transitioning between different states. In its folded state, it offers good portability, while in its unfolded state, it provides a large, seamless display area, resulting in excellent browsing capabilities. The display unit 9001 included in the portable information terminal 9201 is supported by three frames 9000 connected by hinges 9055. The display unit 9001 can be bent, for example, within a radius of curvature of 0.1 mm or more and 150 mm or less.

[0525] This embodiment can be appropriately combined with other embodiments or examples. Furthermore, where multiple structural examples are shown in one embodiment in this specification, these structural examples can be appropriately combined.

[0526] [Example 1] <<Synthesis example 1>> In this embodiment, the synthesis method of 4,9-diphenylquinoline[7,8-h]quinoline (abbreviated as P2Ququ), which is shown as a compound (structural formula (100)) in Embodiment 1, is specifically described. The structure of P2Ququ is shown below.

[0527] [Chemical Formula 37] <Step 1-1: Synthesis of Tetramethyl-2,2'-[Naphthal-1,8-diylbis(azanediyl)]difuric acid> A 2L three-necked flask was filled with 500 mL of ethanol and stirred under a nitrogen atmosphere. Then, 100 mL (816 mmol) of dimethyl acetylenate dicarboxylic acid was added. A solution of 65.0 g (411 mmol) of 1,8-diaminonaphthalene dissolved in 500 mL of ethanol was slowly added dropwise to the flask at room temperature, and the mixture was stirred for 17 hours. After a predetermined time, the reaction mixture was filtered, and the solid was washed with ethanol. 94.1 g of a yellowish-brown solid was obtained in 52% yield. The following formula illustrates the synthetic scheme for step 1-1.

[0528] [Chemical Formula 38] <Steps 1-2: Synthesis of 2,11-bis(methoxycarbonyl)-4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline> 27.7 g (93 mmol) of the yellowish-brown solid synthesized in step 1-1 and 500 mL of diphenyl ether were added to a 1 L three-necked flask, and the mixture was stirred at 250 °C for 2.5 hours under an argon atmosphere. After the predetermined time, the reaction solution was filtered, and the solid was washed with ethanol and ethyl acetate, thereby obtaining 7.91 g of a gray solid in 33% yield. The following formula shows the synthetic scheme for step 1-2.

[0529] [Chemical Formula 39] <Steps 1-3: Synthesis of 4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline-2,11-dicarboxylic acid> 1.00 g (2.6 mmol) of the gray solid synthesized in steps 1-2 and 35 mL of 4 wt% potassium hydroxide aqueous solution were placed in a three-necked flask and refluxed for 7 hours. Then, 0.1 g of activated carbon was added and refluxed for another hour, followed by hot filtration. The reaction solution was heated to 70-80°C and added dropwise over 3 hours with stirring in 125 mL of 1.1% hydrochloric acid. The pale green precipitate was filtered off and washed with approximately 40 mL of boiling water. The solid was boiled in 75 mL of water for approximately 3-4 hours, then filtered off again and washed with approximately 40 mL of boiling water. 0.82 g of a pale green solid was obtained in 97% yield. The following formula shows the synthetic scheme for steps 1-3.

[0530] [Chemical Formula 40] <Steps 1-4: Synthesis of 4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline> The pale green solid obtained in steps 1-3 was sublimated using a gradient sublimation method to perform decarboxylation. The sublimation conditions were set as follows: pressure 2.1 × 10⁻⁶. -2 Heating at 370°C for 1 hour at Pa. A pale yellowish-white solid of 0.42 g of the target compound was obtained in 62% yield. The following formula shows the synthetic scheme for steps 1-4.

[0531] [Chemical Formula 41] <Steps 1-5: Synthesis of 4,9-dichloroquinoline[7,8-h]quinoline> 10.1 g (38 mmol) of the pale yellowish-white solid obtained in steps 1-4 and 50 mL of phosphoryl chloride were placed in a three-necked flask equipped with a reflux duct and stirred at 130 °C for 6 hours under a nitrogen atmosphere. After the predetermined time, the reaction solution was made alkaline by adding an ice-cooled aqueous sodium hydroxide solution. Dichloromethane was added to the alkaline suspension and stirred at room temperature. After washing the organic layer obtained by dichloromethane extraction with a saturated aqueous sodium chloride solution, the mixture was dried with magnesium sulfate. The mixture was separated by gravity filtration and the filtrate was concentrated to give 10.6 g of a pale green solid in 92% yield. The following formula shows the synthetic scheme for steps 1-5.

[0532] [Chemical Formula 42] <Steps 1-6: Synthesis of 4,9-diphenylquinoline[7,8-h]quinoline (abbreviated as P2Ququ)> 4.09 g (14 mmol) of the pale green solid obtained in steps 1-5, 5.00 g (41 mmol) of phenylboronic acid, and 17.4 g (82 mmol) of tripotassium phosphate were placed in a three-necked flask, and the inside of the flask was replaced with nitrogen. 70 mL of dehydrated toluene was added to the flask, and the mixture was stirred under reduced pressure to degas. The flask was then heated to 60 °C under a nitrogen stream, and after adding 0.15 g (0.7 mmol) of palladium(II) acetate (Pd(OAc)₂) and 0.57 g (1.4 mmol) of 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl (sphos), the temperature was increased to 120 °C and refluxed for 6 hours. After the predetermined time, the reaction mixture was hot-filtered and washed with toluene to obtain the filtrate. The filtrate was purified by silica gel column chromatography (toluene:ethyl acetate = 1:1 ~ ethyl acetate). The fraction was concentrated and recrystallized with toluene, thereby yielding 2.40 g of a pale green solid in 46% yield.

[0533] The gradient sublimation method was used at a pressure of 3.1 × 10⁻⁶. -2 2.37 g of the resulting pale green solid was heated for 4 hours at 210 °C, and then the temperature was increased to 215 °C and heated for 3 hours for sublimation purification. After sublimation purification, 1.25 g of the target substance was obtained as a pale yellow solid with a recovery of 53%. The following formula shows the synthetic scheme for steps 1-6.

[0534] [Chemical Formula 43] Figure 21A and Figure 21B The resulting pale yellow solid is shown 1 The 1H NMR spectrum is shown below, along with the numerical data. Additionally, Figure 21B It is magnification Figure 21A The spectrum is shown in the range of 7 ppm to 10 ppm. Therefore, P2Ququ was obtained in this synthetic example.

[0535] 1 H-NMR. δ (CDCl3, 300MHz): 7. 50-7. 59 (m, 12H), 7. 87 (d, J=9. 0Hz, 2H), 8. 09 (d, J=9. 0Hz, 2H), 9. 41 (d, J=4. 5Hz, 2H). <Physical Property Measurement> The glass transition temperature (Tg) of P2Ququ was measured. The powder was placed on an aluminum element and heated at 40 °C / min using a differential scanning calorimeter (DSC8500, manufactured by PerkinElmer Japan Co., Ltd.). The result was a Tg of 86 °C for P2Ququ.

[0536] [Example 2] <<Synthesis example 2>> In this embodiment, the synthesis method of 4,9-bis(naphthyl-2-yl)quinoline[7,8-h]quinoline (abbreviated as βN2Ququ), shown as structural formula (101) in Embodiment 1, is specifically described. The structure of βN2Ququ is shown below.

[0537] [Chemical Formula 44] <Step 2-1: Synthesis of Tetramethyl-2,2'-[Naphthal-1,8-dimethylbis(azanediyl)]difuric acid> The synthesis was carried out in the same manner as step 1-1 in Synthesis Example 1 of Example 1.

[0538] <Step 2-2: Synthesis of 2,11-bis(methoxycarbonyl)-4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline> The synthesis was carried out in the same manner as steps 1-2 in Synthesis Example 1 of Example 1.

[0539] <Steps 2-3: Synthesis of 4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline-2,11-dicarboxylic acid> The synthesis was carried out in the same manner as steps 1-3 in Synthesis Example 1 of Example 1.

[0540] <Steps 2-4: Synthesis of 4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline> The synthesis was carried out in the same manner as steps 1-4 in Synthesis Example 1 of Example 1.

[0541] <Steps 2-5: Synthesis of 4,9-dichloroquinoline[7,8-h]quinoline> The synthesis was carried out in the same manner as steps 1-5 in Synthesis Example 1 of Example 1.

[0542] <Steps 2-6: Synthesis of 4,9-bis(naphthyl-2-yl)quinoline[7,8-h]quinoline (abbreviated as: βN2Ququ)> 1.00 g (3.3 mmol) of the pale green solid obtained in steps 2-5, 1.73 g (10 mmol) of 2-naphthylboronic acid, and 4.27 g (20 mmol) of tripotassium phosphate were placed in a 50 mL three-necked flask, and the inside of the flask was replaced with nitrogen. 17 mL of dehydrated toluene was added to the flask, and the mixture was degassed by stirring under reduced pressure. The flask was then heated to 60 °C under a nitrogen stream, and the temperature was increased to 100 °C and stirred for 4.5 hours after the addition of 0.04 g (0.2 mmol) of palladium(II) acetate (Pd(OAc)2) and 0.14 g (0.3 mmol) of 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl (sphos). After the predetermined time, the reaction solution was filtered and washed with toluene. The solid obtained by concentrating the filtrate was then heated with 200 mL of toluene. Because undissolved portions were observed, filtration was performed to obtain a filtrate. After washing the filtrate with water, the organic layer was dried with magnesium sulfate. The mixture was separated by gravity filtration, and the filtrate was concentrated. Recrystallization was performed with toluene, yielding 0.82 g of a light brown solid in 51% yield. The following formula shows the synthetic scheme for steps 2-6.

[0543] [Chemical Formula 45] Figure 22A and Figure 22B The resulting light brown solid is shown 1 The 1H NMR spectrum is shown below, along with the numerical data. Additionally, Figure 22B It is magnification Figure 22A The spectrum is shown in the range of 7 ppm to 10 ppm. Therefore, βN2Ququ was obtained in this synthetic example.

[0544] 1 H-NMR. δ (CDCl3, 300MHz): 7.57-7.71 (m, 8H), 7.87 (d, J=8.7Hz, 2H), 7.94-8.06 (m, 8H), 8.13 (d, J=8.7Hz, 2H), 9.47 (d, J=4.5Hz, 2H). [Example 3] <<Synthesis example 3>> In this embodiment, the synthesis method of 4,9-bis(1-pyrrolidinyl)quinoline[7,8-h]quinoline (abbreviated as Prd2Ququ), shown as structural formula (102) in Embodiment 1, is specifically described. The structure of Prd2Ququ is shown below.

[0545] [Chemical Formula 46] <Step 3-1: Synthesis of Tetramethyl-2,2'-[Naphthal-1,8-diylbis(azanediyl)]difuric acid> The synthesis was carried out in the same manner as step 1-1 in Synthesis Example 1 of Example 1.

[0546] <Step 3-2: Synthesis of 2,11-bis(methoxycarbonyl)-4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline> The synthesis was carried out in the same manner as steps 1-2 in Synthesis Example 1 of Example 1.

[0547] <Step 3-3: Synthesis of 4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline-2,11-dicarboxylic acid> The synthesis was carried out in the same manner as steps 1-3 in Synthesis Example 1 of Example 1.

[0548] <Steps 3-4: Synthesis of 4,9-dioxo-1,4,9,12-tetrahydroquinoline[7,8-h]quinoline> The synthesis was carried out in the same manner as steps 1-4 in Synthesis Example 1 of Example 1.

[0549] <Steps 3-5: Synthesis of 4,9-dichloroquinoline[7,8-h]quinoline> The synthesis was carried out in the same manner as steps 1-5 in Synthesis Example 1 of Example 1.

[0550] <Steps 3-6: Synthesis of 4,9-bis(1-pyrrolidinyl)quinoline[7,8-h]quinoline (abbreviation: Prd2Ququ)> 0.54 g (1.8 mmol) of the pale green solid obtained in steps 3-5 and 4.33 g (61 mmol) of pyrrolidine were placed in a 50 mL three-necked flask and stirred at 100 °C for 2.5 h under a nitrogen atmosphere. After a predetermined time, the reaction solution was concentrated, and the resulting oil was dissolved in chloroform. After washing the solution with a 2.5 wt% aqueous sodium hydroxide solution, the organic layer was dried with magnesium sulfate. The mixture was separated by gravity filtration, and the filtrate was concentrated to give a brown oil. The brown oil was heated to dissolve it in ethyl acetate, and the solution was filtered to give a filtrate. The filtrate was concentrated and dissolved in toluene. After removing the toluene from the solution using an evaporator, hexane was added, thereby precipitating a solid. By suction filtration, 0.18 g of a brown solid was given in 27% yield. The following formula shows the synthetic scheme for steps 3-6.

[0551] [Chemical Formula 47] Figures 23A to 23C The resulting brown solid is shown 1 The 1H NMR spectrum is shown below, along with the numerical data. Additionally, Figure 23B It is magnification Figure 23A The spectrum shown is in the range of 6 ppm to 9.5 ppm. Figure 23C It is magnification Figure 23A The spectrum is shown in the range of 1 ppm to 5 ppm. Therefore, Prd2Ququ is obtained in this synthetic example.

[0552] 1 H-NMR. δ (CDCl3, 300MHz): 2. 03-2. 07 (m, 8H), 3. 62-3. 66 (m, 8H), 6. 72 (d, J=5. 4Hz, 2H), 7. 66 (d, J=9. 3Hz, 2H), 8. 20 (d, J=8. 7Hz, 2H), 8. 85 (d, J=5. 4Hz, 2H). [Example 4] In this embodiment, a method for manufacturing light-emitting devices 1-1 and 1-2 according to one aspect of the present invention and their characteristics are described in detail. The structural formulas of the main compounds used in light-emitting devices 1-1 and 1-2 are shown below.

[0553] [Chemical Formula 48] (Manufacturing method of light-emitting device 1-1) First, a first electrode 101 is formed on a glass substrate by sputtering a 100 nm thick layer of silver (Ag) as a reflective electrode and an 85 nm thick layer of indium tin oxide (ITSO) containing silicon oxide as a transparent electrode, sequentially stacked from one side of the substrate to form a 2 mm × 2 mm dimension. Note that the transparent electrode is used as the anode and, in combination with the aforementioned reflective electrode, is considered as the first electrode 101.

[0554] Next, as a pretreatment for forming light-emitting devices on the substrate, the substrate surface is washed with water and baked at 200°C for 1 hour.

[0555] Then, the substrate is placed inside and depressurized to 1×10⁻⁶. -4 The substrate is placed in a vacuum evaporation equipment with a pressure of approximately Pa and then vacuum-baked at 170°C for 30 minutes in the heating chamber of the vacuum evaporation equipment, followed by cooling for approximately 30 minutes.

[0556] Next, the substrate is fixed on a support in a vacuum evaporation apparatus with the surface on which the first electrode 101 is formed facing down. A hole injection layer 111 is formed by co-evaporation on the inorganic insulating film and the first electrode 101 using N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviated as: PCBBiF) represented by the above structural formula (i) and an electron acceptor material (OCHD-003) containing fluorine with a molecular weight of 672 in a weight ratio of 1:0.03 (=PCBBiF:OCHD-003) and a thickness of 10 nm.

[0557] PCBiF is deposited on the hole injection layer 111 with a thickness of 85 nm to form the first hole transport layer.

[0558] Next, on the first hole transport layer, the weight ratio of 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviated as: 8mpTP-4mDBtPBfpm), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as: βNCCP), and [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridin-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl-κC]iridium(III) (abbreviated as: Ir(5mppy-d3)2(mbfpypy-d3)) is 0.5:0.5:0. The first luminescent layer is formed by co-evaporation with a thickness of 40 nm using a method of 1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d3)2(mbfpypy-d3)).

[0559] Then, 2-{3-[3-(N-phenyl-9H-carbazo-3-yl)-9H-carbazo-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviated as: 2mPCCzPDBq) represented by the above structural formula (v) is deposited with a thickness of 10 nm to form the first electron transport layer.

[0560] After forming the first electron transport layer, a first layer is formed by co-evaporation of 4,9-diphenylquinoline[7,8-h]quinoline (abbreviated as P2Ququ) represented by the above structural formula (vi), 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviated as Pyrrd-Phen) represented by the above structural formula (vii) in a volume ratio of 0.5:0.5:0.02 (=P2Ququ:Pyrrd-Phen:Li2O) and a thickness of 5 nm. Then, a third layer is formed by evaporation of copper phthalocyanine (abbreviated as CuPc) represented by the above structural formula (viii) in a thickness of 2 nm. Finally, a second layer is formed by co-evaporation of PCBBiF and OCHD-003 in a weight ratio of 1:0.15 (=PCBBiF:OCHD-003) and a thickness of 10 nm, thereby forming an intermediate layer.

[0561] PCBiF is deposited on the intermediate layer with a thickness of 50 nm to form the second hole transport layer.

[0562] A second light-emitting layer is formed by co-evaporation on the second hole transport layer with a weight ratio of 8mpTP-4mDBtPBfpm, βNCCP, and Ir(5mppy-d3)2(mbfpypy-d3) of 0.5:0.5:0.1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d3)2(mbfpypy-d3)) and a thickness of 40nm.

[0563] Then, 2mPCCzPDBq is deposited with a thickness of 20 nm, and 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) represented by the above structural formula (ix) is deposited with a thickness of 20 nm, thereby forming the second electron transport layer.

[0564] Next, an electron injection layer is formed by co-evaporation of lithium fluoride (LiF) and ytterbium (Yb) at a volume ratio of 1:0.5 (=LiF:0.5) and a thickness of 1.5 nm. Then, a second electrode 102 is formed by co-evaporation of silver (Ag) and magnesium (Mg) at a volume ratio of 1:0.1 and a thickness of 15 nm. In addition, 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), represented by the above structural formula (x), is deposited on the second electrode 102 as a capping layer with a thickness of 70 nm, thereby improving the light extraction efficiency.

[0565] Next, in a glove box under a nitrogen atmosphere, a glass substrate is used to seal the light-emitting device in a manner that prevents it from being exposed to the atmosphere (a UV-curable sealant is applied around the element, and UV is irradiated only to the sealant without irradiating the light-emitting device, and heat treatment is performed at 80°C for 1 hour under atmospheric pressure), thereby forming the light-emitting device 1-1.

[0566] (Manufacturing method of light-emitting device 1-2) During the fabrication of light-emitting device 1-2, after the second electron transport layer in light-emitting device 1-1 is formed, it is removed from the vacuum evaporation equipment and exposed to the atmosphere for 1 hour, followed by internal depressurization to 1×10⁻⁶. -4 The device is heated at 80°C for 1 hour under a vacuum of approximately Pa, followed by the manufacturing process after forming the electron injection layer. The rest of the process is the same as that of the light-emitting device 1-1.

[0567] The device structures of light-emitting device 1-1 and light-emitting device 1-2 are shown below.

[0568] [Table 1] Regarding light-emitting device 1-1 and light-emitting device 1-2 Figure 24 The brightness-current density characteristics are shown. Figure 25 The current efficiency-brightness characteristics are shown. Figure 26 The current density-voltage characteristics are shown. Figure 27 The electroluminescence spectrum is shown. Additionally, Table 2 shows the 1000 cd / m² emission spectra of light-emitting devices 1-1 and 1-2. 2 Key characteristics of the surrounding area. Note that luminance, CIE chromaticity, and electroemission spectrum were measured at room temperature using a spectroradiometer (SR-UL1R, manufactured by Topcon).

[0569] [Table 2] Depend on Figures 24 to 27 As shown in Table 2, all devices exhibit high current efficiency and are used as series-type light-emitting devices. Furthermore, even when exposed to the atmosphere during the manufacturing process, the light-emitting device of one embodiment of the present invention exhibits a small rise in driving voltage and good characteristics.

[0570] As can be seen from the above results, the light-emitting device that uses the organic compound represented by general formula (G1) in Embodiment 1 as the first layer of the tandem light-emitting device is a light-emitting device with good characteristics. In addition, even when exposed to atmospheric components during the manufacturing process, the light-emitting device of one aspect of the present invention is a light-emitting device with a small increase in driving voltage and good characteristics.

[0571] [Example 5] In this embodiment, a method for manufacturing light-emitting devices 2-1 and 2-2 according to one aspect of the present invention and their characteristics are described in detail. The structural formulas of the main compounds used in light-emitting devices 2-1 and 2-2 are shown below.

[0572] [Chemical Formula 49] (Manufacturing method of light-emitting device 2-1) First, a first electrode 101 is formed on a glass substrate by sputtering a 100 nm thick layer of silver (Ag) as a reflective electrode and an 85 nm thick layer of indium tin oxide (ITSO) containing silicon oxide as a transparent electrode, sequentially stacked from one side of the substrate to form a 2 mm × 2 mm dimension. Note that the transparent electrode is used as the anode and, in combination with the aforementioned reflective electrode, is considered as the first electrode 101.

[0573] Next, as a pretreatment for forming light-emitting devices on the substrate, the substrate surface is washed with water and baked at 200°C for 1 hour.

[0574] Then, the substrate is placed inside and depressurized to 1×10⁻⁶. -4 The substrate is placed in a vacuum evaporation equipment with a pressure of approximately Pa and then vacuum-baked at 170°C for 30 minutes in the heating chamber of the vacuum evaporation equipment, followed by cooling for approximately 30 minutes.

[0575] Next, the substrate is fixed on a support in a vacuum evaporation apparatus with the surface on which the first electrode 101 is formed facing down. A hole injection layer 111 is formed by co-evaporation on the inorganic insulating film and the first electrode 101 using N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviated as: PCBBiF) represented by the above structural formula (i) and an electron acceptor material (OCHD-003) containing fluorine with a molecular weight of 672 in a weight ratio of 1:0.03 (=PCBBiF:OCHD-003) and a thickness of 10 nm.

[0576] PCBiF is deposited on the hole injection layer 111 with a thickness of 85 nm to form the first hole transport layer.

[0577] Next, on the first hole transport layer, the weight ratio of 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviated as: 8mpTP-4mDBtPBfpm), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as: βNCCP), and [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridin-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl-κC]iridium(III) (abbreviated as: Ir(5mppy-d3)2(mbfpypy-d3)) is 0.5:0.5:0. The first luminescent layer is formed by co-evaporation with a thickness of 40 nm using a method of 1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d3)2(mbfpypy-d3)).

[0578] Then, 2-{3-[3-(N-phenyl-9H-carbazo-3-yl)-9H-carbazo-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviated as 2mPCCzPDBq) representing the above structural formula (v) is deposited with a thickness of 10 nm to form the first electron transport layer.

[0579] After forming the first electron transport layer, a first layer is formed by co-evaporation of 4,9-diphenylquinoline[7,8-h]quinoline (abbreviated as P2Ququ) represented by the above structural formula (vi), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) represented by the above structural formula (ix) and lithium oxide (Li2O) in a volume ratio of 0.5:0.5:0.02 (=P2Ququ:mPPhen2P:Li2O) with a thickness of 5 nm. Then, a third layer is formed by evaporation of copper phthalocyanine (abbreviated as CuPc) represented by the above structural formula (viii) with a thickness of 2 nm. Finally, a second layer is formed by co-evaporation of PCBBiF and OCHD-003 in a weight ratio of 1:0.15 (=PCBBiF:OCHD-003) with a thickness of 10 nm, thereby forming an intermediate layer.

[0580] PCBiF is deposited on the intermediate layer with a thickness of 50 nm to form the second hole transport layer.

[0581] A second light-emitting layer is formed by co-evaporation on the second hole transport layer with a weight ratio of 8mpTP-4mDBtPBfpm, βNCCP, and Ir(5mppy-d3)2(mbfpypy-d3) of 0.5:0.5:0.1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d3)2(mbfpypy-d3)) and a thickness of 40nm.

[0582] Then, 2mPCCzPDBq is deposited with a thickness of 20 nm, and 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) represented by the above structural formula (ix) is deposited with a thickness of 20 nm, thereby forming the second electron transport layer.

[0583] Next, an electron injection layer is formed by co-evaporation of lithium fluoride (LiF) and ytterbium (Yb) at a volume ratio of 1:0.5 (=LiF:0.5) and a thickness of 1.5 nm. Then, a second electrode 102 is formed by co-evaporation of silver (Ag) and magnesium (Mg) at a volume ratio of 1:0.1 and a thickness of 15 nm. In addition, 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), represented by the above structural formula (x), is deposited on the second electrode 102 as a capping layer with a thickness of 70 nm, thereby improving the light extraction efficiency.

[0584] Next, in a glove box under a nitrogen atmosphere, a glass substrate is used to seal the light-emitting device in a manner that prevents it from being exposed to the atmosphere (a UV-curable sealing material is applied around the element, and UV is irradiated only to the sealing material without irradiating the light-emitting device, and heat treatment is performed at 80°C for 1 hour under atmospheric pressure), thereby forming the light-emitting device 2-1.

[0585] (Manufacturing method of light-emitting device 2-2) During the fabrication of light-emitting device 2-2, after the second electron transport layer in light-emitting device 2-1 is formed, it is removed from the vacuum evaporation equipment and exposed to the atmosphere for 1 hour, followed by depressurization of its interior to 1×10⁻⁶. -4 The device is heated at 100°C for 1 hour under a vacuum of approximately Pa, followed by the manufacturing process after forming the electron injection layer. The rest of the process is the same as that of the light-emitting device 2-1.

[0586] The device structures of light-emitting device 2-1 and light-emitting device 2-2 are shown below.

[0587] [Table 3] Regarding light-emitting device 2-1 and light-emitting device 2-2, Figure 28 The brightness-current density characteristics are shown. Figure 29 The current efficiency-brightness characteristics are shown. Figure 30 The current density-voltage characteristics are shown. Figure 31 The electroluminescence spectrum is shown. Additionally, Table 4 shows the 1000 cd / m² emission spectra of light-emitting devices 2-1 and 2-2. 2 Key characteristics of the surrounding area. Note that luminance, CIE chromaticity, and electroemission spectrum were measured at room temperature using a spectroradiometer (SR-UL1R, manufactured by Topcon).

[0588] [Table 4] Depend on Figures 28 to 31 As shown in Table 4, all devices exhibit high current efficiency and are used as series-type light-emitting devices. Furthermore, even when exposed to the atmosphere during the manufacturing process, the light-emitting device of one embodiment of the present invention exhibits a small rise in driving voltage and good characteristics. Additionally, light-emitting device 2-2 becomes a light-emitting device with good current efficiency by being exposed to the atmosphere.

[0589] As can be seen from the above results, the light-emitting device that uses the organic compound represented by general formula (G1) in Embodiment 1 as the first layer of the tandem light-emitting device is a light-emitting device with good characteristics. In addition, even when exposed to atmospheric components during the manufacturing process, the light-emitting device of one aspect of the present invention is a light-emitting device with a small increase in driving voltage and good characteristics.

[0590] [Example 6] In this embodiment, a method for manufacturing a light-emitting device 3 and a comparative light-emitting device 3 according to one aspect of the present invention, and their characteristics are described in detail. The structural formulas of the main compounds used in the light-emitting device 3 and the comparative light-emitting device 3 are shown below.

[0591] [Chemical Formula 50] (Manufacturing method of light-emitting device 3) First, a first electrode 101 is formed on a glass substrate by sputtering a 100 nm thick layer of silver (Ag) as a reflective electrode and an 85 nm thick layer of indium tin oxide (ITSO) containing silicon oxide as a transparent electrode, sequentially stacked from one side of the substrate to form a 2 mm × 2 mm dimension. Note that the transparent electrode is used as the anode and, in combination with the aforementioned reflective electrode, is considered as the first electrode 101.

[0592] Next, as a pretreatment for forming light-emitting devices on the substrate, the substrate surface is washed with water and baked at 200°C for 1 hour.

[0593] Then, the substrate is placed inside and depressurized to 1×10⁻⁶. -4 The substrate is placed in a vacuum evaporation equipment with a pressure of approximately Pa and then vacuum-baked at 170°C for 30 minutes in the heating chamber of the equipment, followed by cooling for approximately 30 minutes.

[0594] Next, the substrate is fixed on a support in a vacuum evaporation apparatus with the surface on which the first electrode 101 is formed facing down. A hole injection layer 111 is formed by co-evaporation on the inorganic insulating film and the first electrode 101 using N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviated as: PCBBiF) represented by the above structural formula (i) and an electron acceptor material (OCHD-003) containing fluorine with a molecular weight of 672 in a weight ratio of 1:0.03 (=PCBBiF:OCHD-003) and a thickness of 10 nm.

[0595] PCBiF is deposited on the hole injection layer 111 with a thickness of 50 nm to form a hole transport layer.

[0596] Next, on the first hole transport layer, the weight ratio of 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviated as: 8mpTP-4mDBtPBfpm), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviated as: βNCCP), and [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridin-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl-κC]iridium(III) (abbreviated as: Ir(5mppy-d3)2(mbfpypy-d3)) is 0.5:0.5:0. The light-emitting layer is formed by co-evaporation with a thickness of 40 nm using a method of 1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d3)2(mbfpypy-d3)).

[0597] Then, after depositing 2-{3-[3-(N-phenyl-9H-carbazo-3-yl)-9H-carbazo-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviated as: 2mPCCzPDBq) with a thickness of 35 nm, 4,9-diphenylquinoline[7,8-h]quinoline (abbreviated as: P2Ququ) with a thickness of 5 nm is deposited, thereby forming an electron transport layer.

[0598] Then, lithium fluoride (LiF) is deposited to form an electron injection layer with a thickness of 1 nm, and a second electrode 102 is formed by co-deposition of silver (Ag) and magnesium (Mg) with a volume ratio of 1:0.1 and a thickness of 15 nm. Furthermore, 4,4',4''-(phenyl-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), represented by the above structural formula (x), is deposited as a capping layer on the second electrode 102 with a thickness of 70 nm, thereby improving the light extraction efficiency.

[0599] Next, in a glove box under a nitrogen atmosphere, a glass substrate is used to seal the light-emitting device in a manner that prevents it from being exposed to the atmosphere (a UV-curable sealing material is applied around the element, and UV is irradiated only to the sealing material without irradiating the light-emitting device, and heat treatment is performed at 80°C for 1 hour under atmospheric pressure), thereby forming the light-emitting device 3.

[0600] (Compare the manufacturing methods of light-emitting device 3) In comparison, the electron transport layer of the light-emitting device 3 has a thickness of 40 nm and a thickness of 2 mPCCzPDBq, which is deposited during the formation of the electron transport layer in the light-emitting device 3. The rest of the components are the same as those in the light-emitting device 3.

[0601] The following shows the structure of light-emitting device 3 and a comparison of light-emitting device 3.

[0602] [Table 5] Regarding light-emitting device 3 and comparison with light-emitting device 3 Figure 32 The brightness-current density characteristics are shown. Figure 33 The brightness-voltage characteristics are shown. Figure 34 The current efficiency-current density characteristics are shown. Figure 35 The current density-voltage characteristics are shown. Figure 36 The electroluminescence spectrum is shown. Additionally, Table 6 shows the 1000 cd / m² of light-emitting device 3 and a comparative light-emitting device 3. 2 Key characteristics of the surrounding area. Note that luminance, CIE chromaticity, and electroemission spectrum were measured at room temperature using a spectroradiometer (SR-UL1R, manufactured by Topcon).

[0603] [Table 6] from Figures 32 to 36 As shown in Table 6, the light-emitting device 3, which uses P2Ququ with high electron injection and electron transport properties in the electron transport layer, has better characteristics than the light-emitting device 3 without P2Ququ, with lower driving voltage and higher current efficiency.

[0604] As can be seen from the above results, the light-emitting device that uses the organic compound represented by the general formula (G1) in Embodiment 1 as the electron transport layer of the tandem light-emitting device is a light-emitting device with good characteristics.

[0605] [Symbol Explanation] 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 100: Display device, 101: First electrode, 101B: First electrode, 101G: First electrode, 101R: First electrode, 101W: First electrode, 102: Second electrode, 103B: Organic compound layer, 103G: Organic compound layer, 103R: Organic compound layer, 103: Organic compound layer, 104: Common layer, 110B: Sub-pixel, 110G: Sub-pixel, 110R: Sub-pixel, 110W: Sub-pixel, 110: Sub-pixel, 111: Hole injection layer, 112B: Conductive layer, 112R: Conductive layer, 112: Hole injection layer Hole transport layer, 113: Light-emitting layer, 114: Electron transport layer, 115: Electron injection layer, 116: Charge generation layer, 117: P-type layer, 118: Electron relay layer, 119: Electron injection buffer layer, 120: Substrate, 122: Resin layer, 125f: Inorganic insulating film, 125: Inorganic insulating layer, 126B: Conductive layer, 126R: Conductive layer, 127a: Insulating layer, 127f: Insulating film, 127: Insulating layer, 128: Layer, 129B: Conductive layer, 129R: Conductive layer, 130B: Light-emitting device, 130G: Light-emitting device, 130R: Light-emitting device, 130: Light-emitting device, 131: Protective layer, 132B: Colored layer, 132G: Colored layer, 132R: Colored layer 140: Connector; 141: Region; 142: Adhesive layer; 151B: Conductive layer; 151C: Conductive layer; 151f: Conductive film; 151G: Conductive layer; 151R: Conductive layer; 151: Conductive layer; 152B: Conductive layer; 152C: Conductive layer; 152f: Conductive film; 152G: Conductive layer; 152R: Conductive layer; 152: Conductive layer; 153: Insulating layer; 155: Common electrode; 156B: Insulating layer; 156C: Insulating layer; 156f: Insulating film; 156G: Insulating layer; 156R: Insulating layer; 156: Insulating layer; 157: Light-shielding layer; 158B: Sacrificial layer; 158Bf: Sacrificial film; 158G: Sacrificial layer; 158Gf: Sacrificial film; 158 R: Sacrificial layer, 158Rf: Sacrificial film, 159B: Mask layer, 159Bf: Mask film, 159G: Mask layer, 159Gf: Mask film, 159R: Mask layer, 159Rf: Mask film, 166: Conductive layer, 171: Insulating layer, 172: Conductive layer, 173: Insulating layer, 174: Insulating layer, 175: Insulating layer, 176: Connector, 177: Pixel part, 178: Pixel, 178a: Pixel, 178b: Pixel, 179: Conductive layer, 190B: Resist mask, 190G: Resist mask, 190R: Resist mask, 191: Resist mask, 201: Transistor, 204: Connector part, 205: Transistor, 211: Insulating layer, 213: Insulating layer214: Insulating layer, 215: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 224B: Conductive layer, 224C: Conductive layer, 224G: Conductive layer, 224R: Conductive layer, 231: Semiconductor layer, 240: Capacitor, 241: Conductive layer, 242: Connector layer, 243: Insulating layer, 245: Conductive layer, 254: Insulating layer, 255: Insulating layer, 256: Plug, 261: Insulating layer, 271: Plug, 280: Display module, 281: Display section, 282: Circuit section, 283a: Pixel circuit, 283: Pixel circuit section, 284a: Pixel, 284: Pixel section, 285: Terminal section, 286: Wiring section, 290: FPC, 291: Substrate, 292: Substrate, 301: Substrate, 310: Transistor, 311: Conductive layer, 312: Low resistance region, 313: Insulating layer, 314: Insulating layer, 315: Component separation layer, 317: Light-shielding layer, 351: Substrate, 352: Substrate, 353: FPC, 354: IC, 355: Wiring, 356: Circuit, 501: First electrode, 502: Second electrode, 503: Organic compound layer, 511: First light-emitting unit, 512: Second light-emitting unit, 513: Intermediate layer, 601: Source line driving circuit. 602: Pixel section; 603: Gate line driving circuit; 604: Sealing substrate; 605: Sealing material; 607: Space; 608: Lead-in wiring; 610: Component substrate; 611: FET for switching; 612: FET for current control; 613: First electrode; 614: Insulator; 616: Organic compound layer; 617: Second electrode; 618: Light-emitting device; 623: FET; 700A: Electronic device; 700B: Electronic device; 721: Frame; 723: Mounting section; 727: Earphone section; 750: Earphone; 751: Display panel; 753: Optical component; 756: Display area; 757: Bezel; 758: Nose pad; 800A: Electronic device; 800B: Electronic device; 820: Display section; 8 21: Frame; 822: Communication Unit; 823: Mounting Unit; 824: Control Unit; 825: Imaging Unit; 827: Earphone Unit; 832: Lens; 1000: Insulating Layer; 6500: Electronic Equipment; 6501: Frame; 6502: Display Unit; 6503: Power Button; 6504: Button; 6505: Speaker; 6506: Microphone; 6507: Camera; 6508: Light Source; 6510: Protective Component; 6511: Display Panel; 6512: Optical Component; 6513: Touch Sensor Panel; 6515: FPC; 6516: IC; 6517: Printed Circuit Board; 6518: Battery; 7000: Display Unit; 7100: Television Unit; 7151: Remote Control Operator; 7171: Frame; 7173: Stand;7200: Notebook PC; 7211: Cabinet; 7212: Keyboard; 7213: Pointing Device; 7214: External Connection Port; 7300: Digital Signage; 7301: Cabinet; 7303: Speaker; 7311: Information Terminal Equipment; 7400: Digital Signage; 7401: Column; 7411: Information Terminal Equipment; 9000: Cabinet; 9001: Display Unit; 9002: Camera; 9003 9005: Speaker; 9006: Operation Keys; 9007: Connection Terminal; 9008: Sensor; 9009: Microphone; 9050: Icon; 9051: Message; 9052: Message; 9053: Message; 9054: Message; 9055: Hinge; 9171: Portable Information Terminal; 9172: Portable Information Terminal; 9173: Tablet Terminal; 9200: Portable Information Terminal; 9201: Portable Information Terminal

Claims

1. An organic compound represented by the general formula (G1): Note that in General Formula (G1) above, R 1 to R 6 are each independently any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, A 1 or A 2 are each independently any one of an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms; in addition, the alkoxy group having 1 to 10 carbon atoms, the substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and the substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms can also be bonded to the quinoline[7,8-h]quinoline skeleton of General Formula (G1) above via an arylene group having 6 to 12 carbon atoms.

2. An organic compound represented by the general formula (G1): Note that, in General Formula (G1) above, R 1 to R 6 each independently is any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by General Formula (g1-1) below, and a group represented by General Formula (g1-2) below, A 1 or A 2 each independently is any one of an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a group represented by General Formula (g1-1) to General Formula (g1-3) below; and in addition, the alkoxy group having 1 to 10 carbon atoms and the substituted or unsubstituted aryl group having 6 to 30 carbon atoms can be bonded to the quinoline[7,8-h]quinoline skeleton of General Formula (G1) above via an arylene group having 6 to 12 carbon atoms, Note that in General Formula (g1-1) to General Formula (g1-3) above, R 11 to R 18 , R 21 to R 28 , and R 31 to R 36 each independently represent any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms; in addition, α 1 or α 2 each independently represent an arylene group having 6 to 12 carbon atoms, n and m each independently represent 0 or 1, k represents an integer of 0 to 3, p and q each independently represent an integer of 0 to 2; in addition, in General Formula (g1-3) above, A 3 is any one of an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by General Formula (g1-1) above, and a group represented by General Formula (g1-2) above.

3. An organic compound represented by the general formula (G2): Note that, in General Formula (G2) above, R 1 to R 6 are each independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, any one of a group represented by General Formula (g2-1) below and a group represented by General Formula (g2-2) below, R 41 to R 50 are each independently hydrogen (including deuterium), an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and any one of a group represented by General Formula (g2-1) to General Formula (g2-3) below, Note that in General Formula (g2-1) to General Formula (g2-3) above, R 11 to R 18 , R 21 to R 28 , and R 31 to R 36 each independently represent any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms; in addition, a 3 represents a phenylene group, p and q each independently represent an integer of 0 to 2; in addition, in General Formula (g2-3) above, R 51 to R 55 are each any one of an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by General Formula (g2-1) above, and a group represented by General Formula (g2-2) above.

4. An organic compound represented by the general formula (G3): Note that, in General Formula (G3) above, R 1 to R 6 are each independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, any one of a group represented by General Formula (g3-1) below and a group represented by General Formula (g3-2) below, R 41 to R 45 are each independently hydrogen (including deuterium), an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and any one of a group represented by General Formula (g3-1) to General Formula (g3-3) below; and A 2 is any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by General Formula (g3-1) below, and a group represented by General Formula (g3-2) below, Note that in General Formula (g3-1) to General Formula (g3-3) above, R 11 to R 18 , R 21 to R 28 , and R 31 to R 36 each independently represent any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms; in addition, a 3 represents a phenylene group, p and q each independently represent an integer of 0 to 2; in addition, in General Formula (g3-3) above, A 3 is any one of an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by General Formula (g1) above, and a group represented by General Formula (g2) above.

5. An organic compound represented by the following general formula (G4): Note that, in General Formula (G4) above, R 1 to R 6 each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 30 carbon atoms.

6. An organic compound represented by the following general formula (G5): Note that, in General Formula (G5) above, R 1 to R 6 each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 30 carbon atoms.

7. An organic compound represented by the following general formula (G6): Note that, in General Formula (G6) above, R 1 to R 6 each independently represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 30 carbon atoms.

8. An organic compound represented by the following general formula (G7): Note that, in General Formula (G7) above, A 1 or A 2 each independently is any one of an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a group represented by General Formula (g1-1) to General Formula (g1-3) below; and the alkoxy group having 1 to 10 carbon atoms and the substituted or unsubstituted aryl group having 6 to 30 carbon atoms can also be bonded to the quinoline[7,8-h]quinoline skeleton of General Formula (G7) above via an arylene group having 6 to 12 carbon atoms, Note that in General Formula (g1-1) to General Formula (g1-3) above, R 11 to R 18 , R 21 to R 28 , and R 31 to R 36 are each independently any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms; in addition, α 1 or α 2 each independently represents an arylene group having 6 to 12 carbon atoms, n and m each independently represent 0 or 1, k represents an integer of 0 to 3, p and q each independently represent an integer of 0 to 2; in addition, in General Formula (g1-3) above, A 3 is any one of an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a group represented by General Formula (g1-1) above, and a group represented by General Formula (g1-2) above.

9. A material for the intermediate layer of a series-connected light-emitting device, comprising: The organic compound represented by the general formula (G1) as described in claim 1 or 2.

10. A series-connected light-emitting device, wherein The organic compound represented by the general formula (G1) as described in claim 1 or 2 is used in the intermediate layer.

11. A series-connected light-emitting device, in, The organic compound and metal or metal compound represented by the general formula (G1) as described in claim 1 or 2 are used in the intermediate layer.

12. A series-connected light-emitting device, in, The organic compound represented by the general formula (G1) as described in claim 1 or 2, and the organic compound having a phenanthroline skeleton, are used in the intermediate layer.

13. A series-connected light-emitting device, comprising: It comprises an organic compound represented by the general formula (G1) as described in claim 1 or 2, an organic compound having a phenanthroline skeleton, and an intermediate layer of metal or metal compound.

Images