SICMOS driving circuit and electronic equipment

Abstract

The utility model discloses an SICMOS drive circuit and an electronic device, the SICMOS drive circuit is connected with a switch tube, the SICMOS drive circuit comprises a rectification circuit, a first diode, a second diode, a first capacitor, a second capacitor, a first resistor and a second resistor, the rectification circuit is connected with the first capacitor, the second capacitor and the first resistor, and the first resistor is connected with the second resistor. The first capacitor and the second capacitor are connected in series, one end of the first resistor is connected with the negative electrode of the first diode and one end of the second resistor, the other end of the second resistor is connected with the negative electrode of the second diode, and the first capacitor and the second capacitor are connected between the second resistor and the second diode. According to the utility model, the driving voltage can be changed by adjusting the parameters of the first diode, the second diode, the first resistor and the second resistor, so that the driving voltage is stable.

Description

Technical Field

[0001] The utility model relates to the technical field of drive circuits, in particular to a SICMOS drive circuit and electronic equipment. Background Art

[0002] SiC silicon carbide is a semiconductor material with extremely excellent physical and chemical properties. SICMOS made of SiC material has high switching frequency and high power, and has been widely used in power electronic equipment. With the update of semiconductor technology, SIC series products have gradually entered the public's field of vision. Compared with ordinary SIIGBT, SICMOS has smaller switching loss and can adapt to switching frequency several times that of IGBT. However, the driving voltage of SICMOS is more stringent than that of IGBT. If used improperly, the switching loss of SICMOS will increase at best, and the machine will explode at worst.

[0003] The existing driving method relies solely on transformer electromagnetic isolation and drives SICMOS through a fixed voltage induced by the secondary side of the transformer. This places high demands on the consistency of the transformer, and once the primary side driving voltage is unstable, the secondary side voltage will be too high or too low, which seriously threatens the normal use of SICMOS. Utility Model Content

[0004] The main purpose of the utility model is to provide a SICMOS driving circuit and electronic equipment, aiming to stabilize the driving voltage.

[0005] To achieve the above-mentioned purpose, the utility model proposes a SICMOS driving circuit, which is connected to a switch tube and includes a rectifier circuit, a first diode, a second diode, a first capacitor, a second capacitor, a first resistor, and a second resistor. The rectifier circuit is connected to the first capacitor, the second capacitor, and the first resistor. The first capacitor is connected to the second capacitor in series. One end of the first resistor is connected to the cathode of the first diode and one end of the second resistor. The other end of the second resistor is connected to the cathode of the second diode. The first capacitor and the second capacitor are connected between the second resistor and the second diode.

[0006] In one embodiment, the rectifier circuit includes a transformer, a third capacitor, a third diode, and a fourth diode. The secondary side of the transformer is connected to one end of the third capacitor, and the other end of the third capacitor is connected to the cathode of the third diode and the anode of the fourth diode.

[0007] In one embodiment, the SICMOS driving circuit further includes a fourth capacitor and a fifth capacitor, the fourth capacitor is connected in parallel with the first capacitor, the fifth capacitor is connected in parallel with the second capacitor, and the fourth capacitor and the fifth capacitor are connected in series.

[0008] In one embodiment, the secondary coupling voltage of the transformer is greater than the sum of the positive and negative voltages of the driving voltage of the SICMOS driving circuit.

[0009] In one embodiment, the SICMOS driving circuit further includes a pulse generator, and the pulse generator is connected to the primary side of the transformer.

[0010] In one embodiment, the switch tube is a SICMOS switch tube or an IGBT transistor.

[0011] The utility model also provides an electronic device, comprising the SICMOS driving circuit.

[0012] The utility model provides a driving voltage by using a first diode and a second diode. The driving voltage can be changed by simply adjusting the parameters of the first diode, the second diode, the first resistor, and the second resistor. When the primary voltage of the transformer fluctuates, the SICMOS driving circuit can effectively solve the fluctuation and protect the driven switch tube, and can effectively solve the consequences of the switch tube turning on the voltage being too high and the turning off the voltage being too low, so as to stabilize the driving voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0014] Figure 1 This is the SICMOS driving circuit diagram;

[0015] Figure 2 The simulation result diagram of positive and negative driving voltages of SICMOS driving circuit under 40V overvoltage condition;

[0016] Figure 3 This is the simulation result diagram of the positive and negative driving voltages of the SICMOS driving circuit under 20V undervoltage conditions.

[0017] The realization of the purpose, functional features and advantages of the utility model will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0019] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back...), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0020] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the utility model, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if the meaning of "and / or" appearing in the full text is to include three parallel schemes, taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme that satisfies both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the utility model.

[0021] The utility model proposes a SICMOS driving circuit, which is connected to a switch tube and includes a rectifier circuit, a first diode D3, a second diode D4, a first capacitor C2, a second capacitor C4, a first resistor R1, and a second resistor R2. The rectifier circuit is connected to the first capacitor C2, the second capacitor C4, and the first resistor R1. The first capacitor C2 is connected in series with the second capacitor C4. One end of the first resistor R1 is connected to the cathode of the first diode D3 and one end of the second resistor R2. The other end of the second resistor R2 is connected to the cathode of the second diode D4. The first capacitor C2 and the second capacitor C4 are connected between the second resistor R2 and the second diode D4.

[0022] In the embodiment of the present utility model, Figure 1As shown, the SICMOS driving circuit provides a driving voltage by using a first diode D3 and a second diode D4. The driving voltage can be changed by simply adjusting the parameters of the first diode D3, the second diode D4, the first resistor R1, and the second resistor R2. When the primary voltage of the transformer 2 fluctuates, the SICMOS driving circuit can effectively solve the fluctuation and protect the driven switch tube, which can effectively solve the consequences of the switch tube turning on voltage being too high and the turning off voltage being too low, and stabilize the driving voltage.

[0023] See also Figure 1 The present invention is improved on the basis of the original driving circuit, and mainly solves the problem that when the primary voltage of the driving transformer 2 is abnormal, the switch tube can be effectively prevented from being affected by the driving voltage, and the driving voltage depends on the voltage regulation level of the first diode D3 and the second diode D4, and is no longer determined by the previous transformer 2 coupling voltage. By modifying the voltage level of the first diode D3 and the second diode D4, the driving voltage of different SICMOS can be easily adapted.

[0024] like Figure 1 The rectifier circuit of this embodiment is a voltage doubling rectifier circuit coupled with a transformer 2. The SICMOS driving circuit uses two voltage regulators, the first diode D3 and the second diode D4, to determine the positive and negative voltages of the driving voltage respectively. The first resistor R1 and the second resistor R2 are the current limiting resistors of the two voltage regulators respectively. The first capacitor C2 and the second capacitor C4 are the voltage stabilizing capacitors for driving the positive and negative voltages. The secondary coupling voltage of the transformer 2 must be greater than the sum of the positive and negative driving voltages.

[0025] Taking the common Infineon SICMOS on the market as an example, the recommended driving voltage is +15V and -4V, the secondary voltage of the control transformer 2 is 30V, the first diode D3 is selected as 19V, the first diode D3 and the first resistor R1 act to divide the 30V voltage into a 19V voltage, the second diode D4 is selected as 4V, the second diode D4 and the second resistor R2 act together to divide the 19V voltage into a 4V voltage, so that the intersection of the first capacitor C2 and the second capacitor C4 is taken as the zero point, the driving voltage of +15V and -4V can be obtained. The specific resistance value and the selection of the diode need to be based on the actual situation. If the primary voltage of the transformer 2 is disturbed, so that the secondary voltage is higher than 30V, the driving voltage can also be guaranteed to be +15 and -5 through the first diode D3 and the second diode D4. If the primary voltage is less than 30V, for example, 15V, the first diode D3 is no longer effective, but the second diode D4 is still effective. The SICMOS drive circuit gives priority to ensuring the stability of the negative voltage shutdown signal. Even if the positive voltage driving the switch tube will hinder the switch tube from turning on, the shutdown will not be affected, at least it will not cause the switch tube to be directly short-circuited and cause the machine to explode. In this embodiment, a voltmeter is connected to both ends of the rectifier circuit, both ends of the second resistor R2, and both ends of the second diode, so that the voltage changes in the circuit can be observed in real time. Figure 2 As shown, Figure 2 The simulation results of the positive and negative driving voltages of the SICMOS driving circuit under 40V overvoltage condition are shown in Figure 2. When the secondary voltage of the transformer is 40V, the sum of the positive and negative driving voltages is less than 40V. Figure 3 As shown, Figure 3 The simulation results of the positive and negative driving voltages of the SICMOS driving circuit under 20V undervoltage conditions are shown in Figure 2. When the secondary voltage of the transformer is 20V, the sum of the positive and negative driving voltages is less than 20V.

[0026] The rectifier circuit includes a transformer 2, a third capacitor C1, a third diode D1, and a fourth diode D2. The secondary side of the transformer 2 is connected to one end of the third capacitor C1, and the other end of the third capacitor C1 is connected to the cathode of the third diode D1 and the anode of the fourth diode D2.

[0027] The SICMOS driving circuit also includes a fourth capacitor C3 and a fifth capacitor C5. The fourth capacitor C3 is connected in parallel with the first capacitor C2, the fifth capacitor C5 is connected in parallel with the second capacitor C4, and the fourth capacitor C3 and the fifth capacitor C5 are connected in series. The fourth capacitor C3 and the fifth capacitor C5 are filter capacitors of the first diode D3 and the second diode D4 of the two voltage regulator tubes.

[0028] In this embodiment, the secondary coupling voltage of the transformer 2 is greater than the sum of the positive and negative voltages of the SICMOS drive circuit drive voltage. A higher secondary coupling voltage can help ensure the fast switching characteristics of the transformer 2; can help reduce the switching loss of the transformer 2 because it allows faster switching of the magnetic flux and reduces energy loss; by reducing switching losses and other power losses, the overall efficiency of the transformer 2 can be improved; can reduce the pressure of the SICMOS drive circuit because it can more easily drive the switching action of the transformer 2, reducing the requirements for the drive circuit, thereby improving the reliability and stability of the system.

[0029] The SICMOS driving circuit also includes a pulse generator 1, which is connected to the primary side of the transformer 2. The pulse generator 1 can control the working cycle of the transformer 2, that is, the frequency and duty cycle of the input signal, so as to adjust the output voltage or current. By adjusting the output signal of the pulse generator 1, precise control of the output of the transformer 2 can be achieved; the pulse generator 1 can be used to implement pulse width modulation, that is, the amplitude of the output signal is controlled by adjusting the width of the pulse; the pulse generator 1 can generate a stable pulse signal for triggering the switching action or other control operations of the transformer 2; the pulse generator 1 can also be used to implement protection functions for the transformer 2, such as overload protection, short circuit protection, etc. By monitoring the status of the input signal and the output signal, and processing and controlling according to the preset logic, protective measures can be taken in time to prevent the transformer 2 from being damaged due to abnormal operation.

[0030] The switch tube is a SICMOS switch tube or an IGBT transistor. The SICMOS driving circuit provided in this embodiment is not only applicable to MOS switch tubes with strict requirements on driving voltage, but also can be used to drive IGBT transistors. It has strong applicability and operability, and can be applied to almost all driving voltages. The first diode D3, the second diode D4, the first resistor R1, and the second resistor R2 can be adjusted according to actual needs to design the driving voltage level. The problem of inconsistent driving voltage fluctuation caused by the consistency of the transformer 2 is solved, the difficulty of transformer 2 design is reduced, the circuit flexibility is improved, and the problem of inconsistent driving voltage caused by inconsistent primary voltage of batch transformer 2 can be effectively solved. When an abnormality occurs in the primary circuit of the transformer 2, the driven switch tube can be well protected, and the problem of direct short circuit of the switch tube will not occur.

[0031] The utility model also provides an electronic device, comprising the SICMOS driving circuit.

[0032] The above description is only an optional embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the inventive concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A SICMOS driving circuit, wherein the SICMOS driving circuit is connected to a switch tube, It is characterized in that The invention comprises a rectifier circuit, a first diode, a second diode, a first capacitor, a second capacitor, a first resistor and a second resistor. The rectifier circuit is connected to the first capacitor, the second capacitor and the first resistor. The first capacitor and the second capacitor are connected in series. One end of the first resistor is connected to the cathode of the first diode and one end of the second resistor. The other end of the second resistor is connected to the cathode of the second diode. The first capacitor and the second capacitor are connected between the second resistor and the second diode.

2. The SICMOS driving circuit according to claim 1, It is characterized in that The rectifier circuit includes a transformer, a third capacitor, a third diode, and a fourth diode. The secondary side of the transformer is connected to one end of the third capacitor, and the other end of the third capacitor is connected to the cathode of the third diode and the anode of the fourth diode.

3. The SICMOS driving circuit according to claim 1, It is characterized in that The SICMOS driving circuit further includes a fourth capacitor and a fifth capacitor. The fourth capacitor is connected in parallel with the first capacitor, the fifth capacitor is connected in parallel with the second capacitor, and the fourth capacitor and the fifth capacitor are connected in series.

4. The SICMOS driving circuit according to claim 2, It is characterized in that The secondary side coupling voltage of the transformer is greater than the sum of the positive and negative voltages of the driving voltage of the SICMOS driving circuit.

5. The SICMOS driving circuit according to claim 2, It is characterized in that The SICMOS driving circuit further includes a pulse generator, which is connected to the primary side of the transformer.

6. The SICMOS driving circuit according to claim 1, It is characterized in that The switch tube is a SICMOS switch tube or an IGBT transistor.

7. An electronic device, It is characterized in that The invention comprises the SICMOS driving circuit as claimed in any one of claims 1 to 6.

Images