IGBT (Insulated Gate Bipolar Transistor) parallel use structure

Abstract

The utility model provides an IGBT parallel use structure, and relates to the technical field of semiconductor device manufacturing. The parallel use structure comprises a plurality of IGBT single tubes arranged in parallel and a conductive assembly, and the conductive assembly comprises an emitter conductive guide rail, a collector conductive guide rail and a grid conductive lock catch. Emitting electrode pins, collector electrode pins and grid electrode pins of the IGBT single tubes are all led out from the single tube chip, and the emitting electrode pins, the collector electrode pins and the grid electrode pins of the plurality of IGBT single tubes are connected in parallel through the emitting electrode conductive guide rail, the collector electrode conductive guide rail and the grid electrode conductive lock catch respectively. According to the utility model, the problems that in the prior art, when the IGBTs are used in parallel, each IGBT single tube needs to be separately inserted into application equipment and then is sequentially and conductively connected, so that the installation program is more complicated, more time and labor cost need to be consumed, and the IGBT single tubes are not suitable for large-scale parallel connection are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor device manufacturing, in particular to an IGBT parallel use structure. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Junction Transistor), so it integrates the advantages of simple gate voltage drive of MOSFET and low on-resistance of BJT; IGBT has been widely used in communications, transportation, home appliances, industry, new energy and other fields due to its advantages of high blocking voltage, large current capacity and low driving power.

[0003] In practical applications, the use of IGBTs in parallel has the advantages of improving system stability, increasing system power capacity, and reducing system costs, and has become a development trend; for example, the Chinese patent with announcement number CN109450235A provides an IGBT multi-parallel module drive circuit that can drive multiple IGBTs connected in parallel, taking into account both economy and device reliability, and achieving high power requirements. However, in the prior art, when using IGBTs in parallel, it is usually necessary to insert each IGBT tube into the application device separately, and then use wiring to make conductive connections in sequence. This method makes the installation procedure more complicated, requires more time and labor costs, and is therefore not suitable for large-scale parallel connection. Utility Model Content

[0004] The purpose of the utility model is to provide an IGBT parallel use structure to solve the problem in the prior art that when IGBTs are used in parallel, each IGBT tube needs to be individually inserted into the application equipment and then conductively connected in sequence, which will lead to a more complicated installation procedure, require more time and labor costs, and is therefore not suitable for large-scale parallel use.

[0005] The utility model is realized by adopting the following technical solutions:

[0006] An IGBT parallel use structure includes a plurality of IGBT single tubes arranged in parallel, and also includes a conductive component, wherein the conductive component includes an emitter conductive rail, a collector conductive rail and a gate conductive lock; the emitter pin, the collector pin and the gate pin of the IGBT single tube are all led out from the single tube chip, and the emitter conductive rail, the collector conductive rail and the gate conductive lock respectively connect the emitter pins, the collector pins and the gate pins of the plurality of IGBT single tubes in parallel.

[0007] In the utility model, by setting a conductive component, the parallel connection of several IGBT single tubes is realized; based on this, when the IGBT is used in parallel, the IGBT parallel use structure can be directly applied to the device, without the need to insert each IGBT single tube into the application device separately and then conduct conductive connection in sequence. Among them, the shape of the conductive component is adapted to the shape of the IGBT single tube, and the length of the conductive component is adapted to the length of several IGBT single tubes after parallel connection; the specific number of parallel IGBT single tubes can be flexibly adjusted according to actual needs.

[0008] Furthermore, the emitter conductive track and the collector conductive track are both in the shape of long strips, and the length of the long strips is adapted to the length of a plurality of emitter pins or a plurality of collector pins connected in parallel.

[0009] In the practical application of the present invention, the length of the long strip shape can be flexibly adjusted according to the needs, as long as the matching relationship with the emitter pin / collector pin can be achieved.

[0010] Furthermore, the emitter pin and collector pin of the IGBT single tube are both provided with a bending portion, and the shape of the bending portion is adapted to the shape of the emitter conductive rail and the collector conductive rail; the emitter conductive rail is inserted into the bending portions of several emitter pins arranged in parallel, and the collector conductive rail is inserted into the bending portions of several collector pins arranged in parallel.

[0011] In the utility model, by setting the bending portion, a placement space can be provided for the emitter conductive track and the collector conductive track; and because the bending portion is originally a part of the emitter pin / collector pin, it is possible to realize the electrical parallel connection between several emitter pins / several collector pins while providing the placement space.

[0012] Furthermore, the gate conductive lock is in the shape of a long strip with an opening on one surface, the width of the opening is adapted to the width of the gate pin, the length of the opening is adapted to the length of several gate pins connected in parallel, and the gate conductive lock is locked on several gate pins arranged in parallel through the opening.

[0013] In the present invention, by providing a gate conductive lock, several gate pins can be locked and connected together, thereby realizing physical parallel connection of several IGBT single tubes; and several gate pins can be electrically connected in parallel. In the practical application of the present invention, the length of the gate conductive lock and its upper opening can be flexibly adjusted according to actual needs, so as to achieve an adaptive relationship with the gate pin.

[0014] Furthermore, the gaps between the emitter conductive rail, the collector conductive rail and the gate conductive latch are filled with insulating material.

[0015] In the utility model, by providing insulating materials, the currents at different pin positions can be isolated, thereby avoiding the mutual current interference, thereby effectively ensuring the normal operation of the parallel use structure.

[0016] Furthermore, the single-tube chip includes an IGBT chip, an FRD chip and two frames that are welded together, wherein the IGBT chip and the FRD chip are located between the two frames.

[0017] In the utility model, a single-tube chip of a sandwich structure is provided in which a frame, a chip and a frame are connected in sequence. Such a sandwich structure can fully utilize the space and improve the pressure resistance of the single-tube chip.

[0018] Compared with the prior art, the beneficial effects achieved by the utility model are:

[0019] An IGBT parallel use structure is provided, so that in actual applications, the parallel IGBT structure can be directly applied to the device, without the need to insert each IGBT tube into the application device separately and then make conductive connections in sequence. Therefore, the installation procedure is greatly simplified, the work efficiency is improved, and time and labor costs can be greatly saved. It can be suitable for large-scale parallel connection. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic diagram of a parallel IGBT structure according to an embodiment of the present invention;

[0021] Figure 2 It is a schematic diagram of five IGBT single tubes Ⅰ arranged in parallel according to an embodiment of the present invention;

[0022] Figure 3 1 is a schematic diagram of the overall structure of the IGBT single tube I described in an embodiment of the present invention;

[0023] Figure 4 Schematic diagram of the internal structure of the IGBT single tube I according to the embodiment of the present invention;

[0024] In the figure: 1. Emitter conductive rail; 2. Collector conductive rail; 3. Gate conductive lock; 4. Emitter pin; 5. Collector pin; 6. Gate pin; 7. Black glue; 8. Single tube chip; 9. Insulating material. DETAILED DESCRIPTION

[0025] To clearly illustrate the solution in the utility model, further description is given below in conjunction with the accompanying drawings:

[0026] Example 1

[0027] Please refer to Figures 1 to 4 This embodiment provides an IGBT parallel use structure, including 5 IGBT single tubes arranged in parallel, and also includes a conductive component, which connects the emitter, collector, and gate of the 5 IGBT single tubes in parallel respectively, and the shape of the conductive component is adapted to the shape of the IGBT single tube, and the length of the conductive component is adapted to the length of the 5 IGBT single tubes after being connected in parallel. Specifically:

[0028] like Figure 3 and Figure 4 As shown, the IGBT single tube includes a single tube chip 8, the external package of the single tube chip 8 is provided with a black glue 7 which plays the role of protection and fixation, etc., and an emitter pin 4, a collector pin 5 and a gate pin 6 are led out from the single tube chip 8; the single tube chip 8 includes an IGBT chip, an FRD chip and two frames welded together, and the IGBT chip and the FRD chip are located between the two frames, forming a sandwich structure type single tube chip 8 in which the frame, the chip and the frame are connected in sequence.

[0029] Among them, the emitter pin 4 and the collector pin 5 both have two right-angled bends that are vertically connected to each other (in other embodiments, the number and shape of the bends can be adjusted according to actual conditions, as long as they can match the shape of the conductive rails). The bends in the emitter pin 4, the bends in the collector pin 5 and the black glue 7 together form a shape similar to a square frame.

[0030] like Figure 2 As shown, after the five IGBT single tubes Ⅰ are connected in parallel, the five emitter pins 4, the five collector pins 5, and the five gate pins 6Ⅰ also form a consistent and corresponding parallel discharge shape.

[0031] like Figure 1 As shown, the conductive component includes an emitter conductive rail 1, a collector conductive rail 2 and a gate conductive lock 3, wherein the gate conductive lock 3 is in the shape of a long strip with an opening on one surface, the width of the opening is adapted to the width of the gate pin 6, the length of the opening is adapted to the length of 5 gate pins 6 connected in parallel, and the gate conductive lock 3 is locked on the 5 gate pins 6 arranged in parallel through the opening.

[0032] The emitter conductive rail 1 and the collector conductive rail 2 are both in the shape of long strips, and the length of the long strips is adapted to the length of 5 emitter pins 4 / 5 collector pins 5 after being connected in parallel; the emitter conductive rail 1 is inserted into the bending portion located on the lower side of the 5 emitter pins 4 arranged in parallel, and the collector conductive rail 2 is inserted into the bending portion located on the lower side of the 5 collector pins 5 arranged in parallel.

[0033] In addition, the gaps between the emitter conductive track 1 , the collector conductive track 2 and the gate conductive latch 3 are filled with insulating material 9 .

[0034] Based on the above structure, the emitter conductive rail 1, the collector conductive rail 2 and the gate conductive lock 3 respectively connect the emitter pin 4, the collector pin 5 and the gate pin 6 of the five IGBT single tubes in parallel, thereby realizing the parallel connection of the five IGBT single tubes; in actual use, the IGBT parallel use structure can be directly applied to the device, without the need to insert each IGBT single tube into the application device separately and then make conductive connections in sequence.

[0035] It should be noted that the parts not described in detail or expanded in the above scheme are all existing technologies, which do not belong to the improvements made by the present invention on the existing technologies, nor do they belong to the protection scope of the technical scheme of the present invention, so they will not be repeated in this article.

[0036] Of course, the above contents are only preferred embodiments of the present invention and cannot be considered to limit the scope of the embodiments of the present invention. The present invention is not limited to the above examples, and any equivalent changes and improvements made by ordinary technicians in the technical field within the essential scope of the present invention shall fall within the scope of the patent coverage of the present invention.

Claims

1. An IGBT parallel use structure, comprising a plurality of IGBT single tubes arranged in parallel, characterized in that: It also includes a conductive component, which includes an emitter conductive rail, a collector conductive rail and a gate conductive lock; the emitter pin, collector pin and gate pin of the IGBT single tube are all led out from the single tube chip, and the emitter conductive rail, collector conductive rail and gate conductive lock respectively connect the emitter pins, collector pins and gate pins of several IGBT single tubes in parallel.

2. The IGBT parallel use structure according to claim 1, characterized in that: The emitter conductive track and the collector conductive track are both in the shape of long strips, and the length of the long strips is adapted to the length of a plurality of emitter pins or a plurality of collector pins connected in parallel.

3. The IGBT parallel use structure according to claim 2, characterized in that: The emitter pin and collector pin of the IGBT single tube are both provided with a bending portion, and the shape of the bending portion is adapted to the shape of the emitter conductive rail and the collector conductive rail; the emitter conductive rail is inserted into the bending portions of several emitter pins arranged in parallel, and the collector conductive rail is inserted into the bending portions of several collector pins arranged in parallel.

4. The IGBT parallel use structure according to claim 1 or 3, characterized in that: The gate conductive lock is in the shape of a long strip with an opening on one surface. The width of the opening is adapted to the width of the gate pin, and the length of the opening is adapted to the length of several gate pins connected in parallel. The gate conductive lock is locked on several gate pins arranged in parallel through the opening.

5. The IGBT parallel use structure according to claim 1, characterized in that: The gaps between the emitter conductive rail, the collector conductive rail and the gate conductive latch are filled with insulating material.

6. The IGBT parallel use structure according to claim 1, characterized in that: The single-tube chip comprises an IGBT chip, an FRD chip and two frames which are welded together, wherein the IGBT chip and the FRD chip are located between the two frames.

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