Cavity structure of electroplating equipment and electroplating equipment
The ion isolation plate with holes in the electroplating device addresses the uneven film thickness issue by controlling cation flow, resulting in a more uniform electroplated film.
Patent Information
- Application Number
- CN202420119005.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-17
- Publication Date
- 2024-12-20
- Estimated Expiration
- 2034-01-17
AI Technical Summary
Existing electroplating equipment results in uneven metal film thickness, with the center being thinner and the edge being thicker due to varying resistance during the electroplating process.
Incorporating an ion isolation plate with holes between the solution separator and the anode in the electroplating device, which blocks excessive cations at the edge to improve film uniformity.
The solution enhances the uniformity of the electroplated film by adjusting the passage of metal ions, ensuring consistent thickness across the plated surface.
Smart Images
Figure CN222205509U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of electroplating technology, and in particular to a cavity structure of an electroplating device and an electroplating device for improving the uniformity of an electroplated film. Background Art
[0002] Electroplating deposition technology is a technology that uses electroplating to plate metal on through holes. The principle of electroplating is that the metal (such as Cu) at the anode loses electrons and enters the solution in the form of metal cations (such as Cu2+), and after reaching the cathode through ion exchange, the metal cations (such as Cu2+) gain electrons and are deposited on the target surface in the form of a single metal (such as Cu).
[0003] like Figure 1 As shown, the existing electroplating equipment generally includes a deposition chamber 10', a copper sulfate solution 30' containing additives, an upper and lower solution separator 60', a copper sulfate solution 40', an anode 50' and an anode support 70'. Among them, the anode 50' is circular and is located in the chamber 10', and the wafer 20' to be electroplated is arranged above the copper sulfate solution 30' containing additives. During electroplating, a direct current 80' is applied between the wafer 20' and the anode 50'. When the redox reaction process is carried out in the electroplating equipment, before a large amount of copper is deposited by electroplating, a seed layer is plated on the surface of the wafer 20', and there is a certain resistance. From the edge to the center of the wafer 20', the resistance will become larger and larger, resulting in the current from the edge to the center of the wafer 20' becoming smaller and smaller during electroplating, thereby causing the thickness of the metal film to be uneven, that is, the center is thinner and the edge is thicker.
[0004] Therefore, it is necessary to provide a structure for improving the uniformity of electroplated films. Utility Model Content
[0005] In response to the problems in the prior art, the purpose of the present application is to provide a cavity structure of an electroplating device and an electroplating device, in which an ion isolation plate with holes is arranged between the solution isolation member and the anode, so as to solve the problem in the prior art that the electroplated film is thinner in the center and thicker at the edge, and to improve the uniformity of the electroplated film.
[0006] The present application provides a cavity structure of an electroplating device, including a cavity and:
[0007] A solution isolating member, used for isolating a first solution at a lower portion and a second solution at an upper portion, wherein a plated member is disposed above a liquid surface of the second solution;
[0008] an anode, disposed below the solution separator and immersed in the first solution;
[0009] The ion isolation plate is arranged between the solution isolation element and the anode. The projection of the ion isolation plate on the plane where the electroplated element is located at least partially covers the edge of the electroplated element, and the ion isolation plate is provided with at least one hole.
[0010] In some embodiments, the ion separator is disposed parallel to the anode.
[0011] In some embodiments, the ion isolation plate is provided with a plurality of holes, and the plurality of holes are evenly distributed along a circumferential direction.
[0012] In some embodiments, the holes are fan-shaped holes, and a plurality of the fan-shaped holes surround to form a ring.
[0013] In some embodiments, the surface of the anode is circular, the surface of the ion isolation plate is circular, and the surface diameter of the ion isolation plate is larger than the surface diameter of the anode.
[0014] In some embodiments, the ion isolation plate is an isolation plate made of insulating material to block the passage of metal ions at locations where no holes are set.
[0015] In some embodiments, an isolation plate bracket and a driving assembly are also included, wherein the isolation plate bracket is connected to the ion isolation plate, and the driving assembly is connected to the isolation plate bracket for driving the isolation plate to move up and down.
[0016] In some embodiments, the driving assembly includes a driving member controller and an isolation plate bracket driving member, the isolation plate bracket driving member is arranged below the isolation plate bracket, and the driving member controller drives the ion isolation plate to move up and down through the isolation plate bracket driving member.
[0017] In these embodiments, the distance between the ion isolation plate and the plated object can be adjusted by the driving component, thereby adjusting the degree of cation blocking of the ion isolation plate to adjust the surface uniformity of the electroplated film. When in use, the position between the ion isolation plate and the wafer can be conveniently adjusted by manipulating the driving component controller to meet the use requirements in different scenarios.
[0018] In some embodiments, the cavity structure further includes a bellows, which is disposed on the outside of the isolation plate support driving component and connected to the isolation plate support driving component, and the bellows is deformed as the isolation plate support driving component moves up and down.
[0019] An embodiment of the present application also provides an electroplating device, comprising the above-mentioned cavity structure.
[0020] The cavity structure of the electroplating equipment and the electroplating equipment provided in this application have the following advantages:
[0021] The present application sets an ion isolation plate with holes between the solution isolation member and the anode to block the amount of cations passing through the edge position of the electroplated part, thereby solving the problem of the electroplated film being thinner in the center and thicker at the edge in the prior art and improving the uniformity of the electroplated film. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings.
[0023] Figure 1 It is a schematic diagram of a cavity structure of an electroplating device in the prior art;
[0024] Figure 2 is a schematic diagram of a cavity structure of an electroplating device according to an embodiment of the present application;
[0025] Figure 3 is a top view of an ion isolation plate according to an embodiment of the present application;
[0026] Figure 4 It is a schematic diagram of the cavity structure of the electroplating equipment according to another embodiment of the present application.
[0027] Reference numerals:
[0028] Prior art 50' anode
[0029] 10' chamber 60' solution spacer
[0030] 20' Wafer 70' Anode Holder
[0031] 30' Copper sulfate solution with additives 80' DC
[0032] 40' Copper sulfate solution
[0033] This application
[0034] 10 cavity 91 ion isolation plate
[0035] 20 Wafer 911 Isolation Plate Connecting Column
[0036] 30 Copper sulfate solution containing additives 912 Holes in the isolation plate
[0037] 40 Copper sulfate solution 92 Isolation plate support
[0038] 50 Anode 93 Bellows
[0039] 60 Solution isolation part 94 Isolation plate support drive part
[0040] 70 Anode support 95 Drive controller
[0041] 80 DC DETAILED DESCRIPTION
[0042] The example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in a variety of forms and should not be construed as being limited to the embodiments set forth herein; on the contrary, these embodiments are provided so that the present application will be comprehensive and complete, and the concept of the example embodiments will be fully conveyed to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their repeated descriptions will be omitted. "Or" and "or" in the specification may both mean "and" or "or". Although the terms "upper", "lower", "between", etc. may be used in this specification to describe different exemplary features and elements of the present application, these terms are used herein only for convenience, such as according to the directions of the examples described in the accompanying drawings. Nothing in this specification should be construed as requiring a specific three-dimensional direction of the structure to fall within the scope of the present application. Although "first" or "second" etc. are used in this specification to represent certain features, they are only used to represent the function, and are not used as a limitation on the number and importance of specific features.
[0043] In order to solve the technical problems in the prior art, the embodiment of the present application provides a cavity structure of an electroplating device, including a cavity and a solution separator arranged in the cavity, which is used to separate a first solution below and a second solution above, wherein a plated part is arranged above the liquid surface of the second solution; an anode, which is arranged below the solution separator and immersed in the first solution; and an ion isolation plate, which is arranged between the solution separator and the anode, wherein the projection of the ion isolation plate on the plane where the plated part is located at least partially covers the edge of the plated part, and the ion isolation plate is provided with at least one hole. The embodiment of the present application also provides an electroplating device including the cavity structure, which is used to perform metal plating on the plated part based on the electroplating deposition technology. The present application arranges an ion isolation plate with holes between the solution separator and the anode to block the amount of cations passing through the edge position of the plated part, thereby solving the problem that the electroplated film is thinner in the center and thicker at the edge in the prior art, and improving the uniformity of the electroplated film.
[0044] The following describes in detail the chamber structure of the electroplating equipment in a specific embodiment in conjunction with the accompanying drawings. It should be understood that the accompanying drawings and the following description are only examples and are not intended to limit the scope of protection of this application.
[0045] like Figure 2As shown, an embodiment of the present application provides a cavity structure of an electroplating device, including a cavity 10 and a solution separator 60, an anode 50 and an ion isolation plate 91 arranged in the cavity 10. The solution separator 60 is used to isolate the first solution below and the second solution above. Among them, the electroplated part is arranged above the liquid surface of the second solution. In this embodiment, the electroplated part is a wafer 20 as an example for description. The first solution is a copper sulfate solution 40, the second solution is a copper sulfate solution 30 containing additives, and the solution separator 60 is a solution isolation membrane. The anode 50 is arranged below the solution separator 60 and immersed in the copper sulfate solution 40. An anode bracket 70 is arranged below the anode 50. During electroplating, a direct current 80 is applied between the wafer 20 and the anode 50, and the Cu at the anode 50 loses electrons and enters the solution in the form of metal cation Cu2+, and after reaching the wafer 20 through ion exchange, the metal cation Cu2+ is deposited on the surface of the wafer 20 in the form of single metal Cu due to the acquisition of electrons.
[0046] like Figure 2 As shown, the ion isolation plate 91 is arranged between the solution isolation member 60 and the anode 50, and the projection of the ion isolation plate 91 on the plane where the wafer 20 is located at least partially covers the edge of the wafer 20, and the ion isolation plate 91 is provided with at least one hole. An isolation plate bracket 92 is provided below the ion isolation plate 91 for supporting the ion isolation plate 91. The ion isolation plate 91 blocks the cations from passing from bottom to top at the position where the hole is not provided. Since the projection (orthographic projection) of the ion isolation plate 91 on the plane where the wafer 20 is located at least partially covers the edge of the wafer 20, during electroplating, the ion isolation plate 91 can block the amount of cations corresponding to the edge of the wafer 20 passing through, solving the problem of thinner center and thicker edge of the electroplated film in the prior art, and improving the uniformity of the electroplated film. In this embodiment, the center of the ion isolation plate 91, the center of the wafer 20 and the center of the anode 50 are aligned in the up and down direction (the axial direction of the chamber 10). The projection of the ion isolation plate 91 on the plane where the wafer 20 is located covers the entire edge circumference of the wafer 20 .
[0047] In this embodiment, the ion isolation plate 91 is made of insulating material to block the passage of metal ions at a position where no holes are set. The ion isolation plate 91 is arranged parallel to the anode 50. The ion isolation plate 91 is provided with a plurality of holes, and the plurality of holes are evenly distributed along a circumferential direction. By adjusting the number and position of the holes, the speed of film formation at different positions on the surface of the wafer 20 can be adjusted to meet the electroplating requirements of wafers 20 of different sizes.
[0048] like Figure 3As shown, the surface of the anode 50 is circular, the surface of the ion isolation plate 91 is circular, and the surface diameter of the ion isolation plate 91 is larger than the surface diameter of the anode 50. And the surface area of the ion isolation plate 91 is larger than the surface area of the wafer 20. In one embodiment, the hole 912 is a fan-shaped hole, and a plurality of the fan-shaped holes surround a circular ring, and the isolation plate at the center position is retained. An isolation plate connecting column 911 is provided between adjacent holes 912. The fan-shaped hole is arranged near the center of the ion isolation plate 91. During the electroplating process, the position where the ion isolation plate 91 is not provided with holes prevents the excessive cations at the edge of the wafer 20 from forming too thick a film, and allows the middle cations to pass through enough and form the film quickly enough, thereby changing the uniformity of the electroplated film. The processing at the most central position of the wafer will also form a thicker film due to the ion convergence effect, so the ion isolation plate at the center position is retained. At the position corresponding to the fan-shaped hole, the existing coating will be improved, so that the overall coating uniformity of the wafer surface is better. During application, the position, size and number of holes can be adjusted according to specific needs to meet the requirements of different scenarios.
[0049] Figure 4 Schematic diagram of the cavity structure of the electroplating equipment of another embodiment of the present application. The difference between this embodiment and the previous embodiment is that the cavity structure further includes a driving component, which is connected to the isolation plate bracket 92 and is used to drive the isolation plate bracket 92 to drive the ion isolation plate 91 to move up and down. Figure 4 As shown, the driving assembly includes a driving member controller 95 and an isolation plate support driving member 94. The isolation plate support driving member 94 is arranged below the isolation plate support 92. The driving member controller 95 drives the ion isolation plate 91 to move up and down through the isolation plate support driving member 94, that is, to reciprocate along the axial direction of the chamber 10, so as to adjust the distance between the ion isolation plate 91 and the wafer 20. The driving member controller 95 is, for example, a linear motor, and its output shaft is connected to the isolation plate support driving member 94. The isolation plate support driving member 94 serves as a transmission member between the driving member controller 95 and the isolation plate support 92, and transmits the linear motion along the axial direction of the chamber 10. The chamber structure also includes a bellows 93, which is arranged on the outside of the isolation plate support driving member 94 and located on the inside of the anode support 70. The top end of the bellows 93 is connected to the isolation plate support driving member 94, so that the bellows 93 is deformed with the up and down movement of the isolation plate support driving member 94. Therefore, in this embodiment, the degree of cation blocking of the ion isolation plate 91 can be adjusted by controlling the distance between the ion isolation plate 91 and the wafer 20, so as to adjust the surface uniformity of the electroplated film. When in use, the position between the ion isolation plate 91 and the wafer 20 can be conveniently adjusted by manipulating the drive controller 95 to meet the use requirements in different scenarios.
[0050] The present application also provides an electroplating device, including the cavity structure. The electroplating device may further include a power supply component for applying direct current, a control button for operating a driving component controller, etc. When the electroplating device is used to electroplate the electroplated part, the ion isolation plate blocks the amount of cations passing through the edge position of the electroplated part, thereby solving the problem of the electroplated film being thinner in the center and thicker at the edge in the prior art, and improving the uniformity of the electroplated film.
[0051] The above content is a further detailed description of the present application in combination with specific preferred implementation methods, and it cannot be determined that the specific implementation of the present application is limited to these descriptions. For ordinary technicians in the technical field to which the present application belongs, several simple deductions or substitutions can be made without departing from the concept of the present application, which should be deemed to fall within the scope of protection of the present application.
Claims
1. A cavity structure of an electroplating device, characterized in that: The invention comprises a cavity and: A solution isolating member, used for isolating a first solution at a lower portion and a second solution at an upper portion, wherein a plated member is disposed above a liquid surface of the second solution; an anode, disposed below the solution separator and immersed in the first solution; The ion isolation plate is arranged between the solution isolation element and the anode. The projection of the ion isolation plate on the plane where the electroplated element is located at least partially covers the edge of the electroplated element, and the ion isolation plate is provided with at least one hole.
2. The cavity structure of the electroplating equipment according to claim 1, characterized in that: The ion separator is arranged parallel to the anode.
3. The cavity structure of the electroplating equipment according to claim 1, characterized in that: The ion isolation plate is provided with a plurality of holes, and the plurality of holes are evenly distributed along a circumferential direction.
4. The cavity structure of the electroplating equipment according to claim 3, characterized in that: The holes are fan-shaped holes, and a plurality of the fan-shaped holes surround to form a ring.
5. The cavity structure of the electroplating equipment according to claim 1, characterized in that: The surface of the anode is circular, the surface of the ion isolation plate is circular, and the surface diameter of the ion isolation plate is larger than the surface diameter of the anode.
6. The cavity structure of the electroplating equipment according to claim 1, characterized in that: The ion isolation plate is an isolation plate made of insulating material.
7. The cavity structure of the electroplating equipment according to claim 1, characterized in that: It also includes an isolation plate bracket and a driving component, wherein the isolation plate bracket is connected to the ion isolation plate, and the driving component is connected to the isolation plate bracket and is used to drive the isolation plate bracket to drive the ion isolation plate to move up and down.
8. The cavity structure of the electroplating equipment according to claim 7, characterized in that: The driving component includes a driving member controller and an isolation plate bracket driving member. The isolation plate bracket driving member is arranged below the isolation plate bracket. The driving member controller drives the ion isolation plate to move up and down through the isolation plate bracket driving member.
9. The cavity structure of the electroplating equipment according to claim 8, characterized in that: The cavity structure also includes a bellows, which is arranged on the outside of the isolation plate support driving member and connected to the isolation plate support driving member. The bellows is deformed as the isolation plate support driving member moves up and down.
10. An electroplating device, characterized in that: A cavity structure comprising any one of claims 1 to 9.