Heating annealing device for silicon carbide wafer production

Abstract

The utility model relates to a heating annealing device for silicon carbide sheet production, which comprises a base, a driving mechanism is arranged in the base, a mounting box is fixedly mounted at the top of the base, a fixed box is fixedly mounted at the top of the mounting box, and an annealing box is fixedly mounted on the left side of the fixed box. A water cooling box is arranged in the annealing box, a placement box is arranged in the water cooling box, a cover plate is arranged at the top of the annealing box, two circulating pump boxes are fixedly mounted at the top of the fixed box, and water pumping pipes are fixedly mounted at the input ends of the two circulating pump boxes. According to the heating annealing device for silicon carbide wafer production, by arranging the driving mechanism, the annealing furnace has a rapid cooling function, the cooling effect of the equipment is improved by changing the original pushing mode of the equipment, meanwhile, by arranging the circulating pump box and the cooling water storage tank, cooling water can be rapidly cooled, and the cooling effect is improved. And circulation is carried out again.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide, in particular to a heating annealing device for producing silicon carbide slices. Background Art

[0002] Silicon carbide is an inorganic substance with the chemical formula SiC. It is made of quartz sand, petroleum coke (or coal coke), sawdust (salt is needed to produce green silicon carbide) and other raw materials through high-temperature smelting in a resistance furnace. Silicon carbide also exists in rare minerals in nature, such as moissanite. Among non-oxide high-tech refractory raw materials such as C, N, and B, silicon carbide is the most widely used and economical one, which can be called diamond sand or refractory sand.

[0003] Annealing refers to a method of heating a material to a certain temperature in a specific atmosphere, keeping it warm for a period of time, and then cooling it at an appropriate rate. It is a very common heat treatment process in the field of materials. Annealing is required in the process of silicon carbide production. However, when using existing silicon carbide annealing furnaces, most of them place silicon carbide on a pushing rack and push it into the annealing furnace. After heating, it is cooled by air cooling to complete annealing. This method has low cooling efficiency and is not convenient to use. Therefore, a heating annealing device for silicon carbide wafer production is proposed to solve the above problems. Utility Model Content

[0004] In view of the shortcomings of the prior art, the utility model provides a heating annealing device for silicon carbide wafer production, which has the advantages of efficient cooling, etc., and solves the problem that most of the existing silicon carbide annealing furnaces are used, in which the silicon carbide is placed on a pushing rack and pushed into the annealing furnace. After heating, the temperature is reduced by air cooling to complete annealing, and this method has low cooling efficiency and is inconvenient to use.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a heating annealing device for silicon carbide wafer production, comprising a base, a driving mechanism is arranged inside the base, a mounting box is fixedly installed on the top of the base, a fixing box is fixedly installed on the top of the mounting box, an annealing box is fixedly installed on the left side of the fixing box, a water cooling box is arranged inside the annealing box, a placing box is arranged inside the water cooling box, a cover plate is arranged on the top of the annealing box, two circulating pump boxes are fixedly installed on the top of the fixing box, water pumping pipes are fixedly installed on the input ends of the two circulating pump boxes, connecting pipes are fixedly installed on the output ends of the two circulating pump boxes, cooling water storage tanks are fixedly installed on the ends of the two connecting pipes away from the circulating pump boxes, and a water inlet pipe is fixedly installed on the right side of the cooling water storage tank;

[0006] The driving mechanism includes a servo motor, a servo motor is fixedly installed on the inner bottom wall of the base, a screw is fixedly connected to the output shaft of the servo motor, a moving block is sleeved on the outer surface of the screw, a connecting block is fixedly installed on the top of the moving block, a supporting block is fixedly installed on the top of the connecting block, a fixed block is fixedly installed on the top of the supporting block, and a heating box is fixedly installed inside the fixed block.

[0007] Furthermore, a moving groove matched with the connecting block is provided on the top of the base, and a threaded groove matched with the screw rod is provided inside the moving block.

[0008] Furthermore, an opening adapted to the annealing box is provided on the right side of the heating box, and the heating box and the annealing box are located at the same horizontal position.

[0009] Furthermore, a circulating pump is disposed inside each of the two circulating pump boxes, and a first through groove adapted to the two connecting pipes is formed on the top of each of the two circulating pump boxes.

[0010] Furthermore, a second through groove adapted to the two water pumping pipes is provided on the left side of the two circulation pump boxes.

[0011] Furthermore, the fronts of the installation box and the fixed box are both provided with switch doors, and the cooling water storage tank is located on the right side of the installation box, and the cooling water storage tank is located on the top of the base.

[0012] Compared with the prior art, the technical solution of this application has the following beneficial effects:

[0013] The heating annealing device for silicon carbide wafer production has a fast cooling function for the annealing furnace by setting a driving mechanism, and increases the cooling effect of the equipment by changing the original pushing mode of the equipment. Meanwhile, the circulating pump box and the cooling water storage tank can quickly cool the cooling water and circulate it again, thereby reducing the temperature of the equipment suddenly by water cooling, achieving a better annealing effect, and effectively improving the annealing efficiency. The setting of the driving mechanism, the circulating pump box and the cooling water storage tank effectively solves this problem. Compared with the existing equipment, the use effect is more outstanding and more practical. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a three-dimensional diagram of the heating box structure of the utility model;

[0015] Figure 2 This is a front cross-sectional view of the structure of the utility model;

[0016] Figure 3 It is a top view of the structure of the utility model.

[0017] In the figure: 1. base; 2. driving mechanism; 201. servo motor; 202. screw; 203. moving block; 204. connecting block; 205. supporting block; 206. fixing block; 207. heating box; 3. installation box; 4. fixing box; 5. annealing box; 6. water cooling box; 7. placement box; 8. cover plate; 9. circulation pump box; 10. water pumping pipe; 11. connecting pipe; 12. cooling water storage tank; 13. water inlet pipe. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0019] See also Figure 1-3 In this embodiment, a heating annealing device for producing silicon carbide wafers comprises a base 1, a driving mechanism 2 is arranged inside the base 1, a mounting box 3 is fixedly installed on the top of the base 1, a fixing box 4 is fixedly installed on the top of the mounting box 3, an annealing box 5 is fixedly installed on the left side of the fixing box 4, a water cooling box 6 is arranged inside the annealing box 5, a placing box 7 is arranged inside the water cooling box 6, a cover plate 8 is arranged on the top of the annealing box 5, two circulating pump boxes 9 are fixedly installed on the top of the fixing box 4, a water pumping pipe 10 is fixedly installed on the input ends of the two circulating pump boxes 9, a connecting pipe 11 is fixedly installed on the output ends of the two circulating pump boxes 9, a cooling water storage tank 12 is fixedly installed on the end of the two connecting pipes 11 away from the circulating pump box 9, and a water inlet pipe 13 is fixedly installed on the right side of the cooling water storage tank 12;

[0020] The driving mechanism 2 includes a servo motor 201, the servo motor 201 is fixedly installed on the inner bottom wall of the base 1, the output shaft of the servo motor 201 is fixedly connected to a screw rod 202, the outer surface of the screw rod 202 is sleeved with a moving block 203, the top of the moving block 203 is fixedly installed with a connecting block 204, the top of the connecting block 204 is fixedly installed with a supporting block 205, the top of the supporting block 205 is fixedly installed with a fixed block 206, and the interior of the fixed block 206 is fixedly installed with a heating box 207.

[0021] The base 1 is provided to provide necessary support and fixation for the equipment. The installation box 3 and the fixing box 4 are provided, and a PLC controller, a power supply terminal device and other circuit devices can be provided inside to enable the equipment to operate normally. The annealing box 5, the water cooling box 6 and the placement box 7 are provided, and silicon carbide can be placed inside the placement box 7. The circulating pump box 9 is started to extract cooling water from the cooling water storage tank 12 through the connecting pipe 11, and transport it to the water cooling box 6 through the pumping pipe 10, so as to circulate and efficiently cool the placement box 7.

[0022] When implementing, follow these steps:

[0023] 1) First, the servo motor 201 is started to make it start to rotate, and the rotation of the servo motor 201 further drives the screw 202 to rotate simultaneously;

[0024] 2) Then, due to the setting of the moving groove and the thread groove, the moving block 203 can move left and right following the rotation of the screw rod 202, and at the same time drive the connecting block 204 to move left and right;

[0025] 3) The movement of the connecting block 204 drives the supporting block 205 to move, and drives the fixing block 206 to move, and finally drives the heating box 207 to move;

[0026] 4) Finally, the heating box 207 is started to heat up, and the heating box 207 is moved to the outside of the annealing box 5 to quickly heat up the silicon carbide. After the heating is completed, the annealing box 5 is quickly moved out of the heating, and the annealing is completed by rapid cooling through water cooling.

[0027] In summary, the heating annealing device for silicon carbide wafer production, by setting the driving mechanism 2, enables the annealing furnace to have a rapid cooling function, and increases the cooling effect of the equipment by changing the original pushing mode of the equipment. At the same time, the setting of the circulating pump box 9 and the cooling water storage tank 12 can quickly cool the cooling water and circulate it again, so that the temperature of the equipment is suddenly reduced by water cooling, achieving a better annealing effect, and effectively improving the annealing efficiency. The setting of the driving mechanism 2, the circulating pump box 9 and the cooling water storage tank 12 effectively solves this problem. Compared with the existing equipment, it is more outstanding in use effect and more practical.

[0028] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0029] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A heating annealing device for producing silicon carbide wafers, comprising a base (1), characterized in that: A driving mechanism (2) is arranged inside the base (1); a mounting box (3) is fixedly mounted on the top of the base (1); a fixing box (4) is fixedly mounted on the top of the mounting box (3); an annealing box (5) is fixedly mounted on the left side of the fixing box (4); a water cooling box (6) is arranged inside the annealing box (5); a placement box (7) is arranged inside the water cooling box (6); a cover plate (8) is arranged on the top of the annealing box (5); two circulating pump boxes (9) are fixedly mounted on the top of the fixing box (4); a water pumping pipe (10) is fixedly mounted on the input ends of the two circulating pump boxes (9); a connecting pipe (11) is fixedly mounted on the output ends of the two circulating pump boxes (9); a cooling water storage tank (12) is fixedly mounted on the ends of the two connecting pipes (11) away from the circulating pump boxes (9); and a water inlet pipe (13) is fixedly mounted on the right side of the cooling water storage tank (12); The driving mechanism (2) comprises a servo motor (201), the servo motor (201) is fixedly mounted on the inner bottom wall of the base (1), the output shaft of the servo motor (201) is fixedly connected to a screw rod (202), the outer surface of the screw rod (202) is sleeved with a moving block (203), the top of the moving block (203) is fixedly mounted with a connecting block (204), the top of the connecting block (204) is fixedly mounted with a supporting block (205), the top of the supporting block (205) is fixedly mounted with a fixing block (206), and the interior of the fixing block (206) is fixedly mounted with a heating box (207).

2. A heating annealing device for producing silicon carbide wafers according to claim 1, characterized in that: The top of the base (1) is provided with a moving groove matched with the connecting block (204), and the inside of the moving block (203) is provided with a threaded groove matched with the screw rod (202).

3. The heating annealing device for producing silicon carbide wafers according to claim 1, characterized in that: An opening matching the annealing box (5) is provided on the right side of the heating box (207), and the heating box (207) and the annealing box (5) are located at the same horizontal position.

4. The heating annealing device for producing silicon carbide wafers according to claim 1, characterized in that: A circulating pump is disposed inside each of the two circulating pump boxes (9), and a first through groove adapted to fit the two connecting pipes (11) is provided on the top of each of the two circulating pump boxes (9).

5. The heating annealing device for producing silicon carbide wafers according to claim 1, characterized in that: The left sides of the two circulation pump boxes (9) are each provided with a second through groove adapted to fit the two water pumping pipes (10).

6. The heating annealing device for producing silicon carbide wafers according to claim 1, characterized in that: The fronts of the installation box (3) and the fixed box (4) are both provided with a switchable door, and the cooling water storage tank (12) is located on the right side of the installation box (3), and the cooling water storage tank (12) is located on the top of the base (1).

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