Power unit and frequency converter

By designing side-by-side insulated gate bipolar transistors in high-voltage inverters and optimizing the connection copper bar, the parasitic inductance problem caused by excessive loop length of high-power high-voltage inverters is solved, which improves performance and stability and reduces costs.

CN222214172UActive Publication Date: 2024-12-20BEIJING HEKANG NEW ENERGY FREQUENCY CONVERSION TECH CO LTD
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Patent Information

Application Number
CN202323468646.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2023-12-19
Publication Date
2024-12-20
Estimated Expiration
2033-12-19

AI Technical Summary

Technical Problem

The loop length of high-power high-voltage inverters is too long during use, resulting in an increase in parasitic inductance, which reduces the performance of the power unit. In order to reduce parasitic inductance, it usually requires the installation of absorption capacitors, which increases production costs.

Method used

A power unit is designed to optimize the capacitor by providing insulated gate bipolar transistors side by side on the heat dissipation assembly and connecting it to the capacitor assembly by connecting the copper bar. The length of the connecting copper row with the IGBT is laminated and bent to reduce parasitic inductance and separate the heat dissipation assembly from the capacitor assembly by means of support for improved thermal management.

Benefits of technology

It effectively reduces parasitic inductance, improves the performance and stability of the power unit, reduces the demand for absorbing capacitors, reduces production costs, and improves the reliability and anti-interference ability of the system.

✦ Generated by Eureka AI based on patent content.

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Abstract

The embodiment of the utility model provides a power unit and a frequency converter, and the power unit comprises a heat radiation assembly which comprises a heat radiator and a plurality of insulated gate bipolar transistors arranged on the heat radiator, and the plurality of insulated gate bipolar transistors are arranged side by side; the capacitor assembly comprises a supporting piece and a plurality of capacitors arranged on the supporting piece; one end of the connecting copper bar is connected to the insulated gate bipolar transistor, and the other end of the connecting copper bar is connected to the capacitor assembly; wherein the connecting copper bar comprises an extension part, the extension part extends towards the heat dissipation assembly, one end of the extension part extends towards at least two insulated gate bipolar transistors which are arranged side by side, and the end part of the extension part is provided with a contact part which is connected with a wiring point of the insulated gate bipolar transistor in the same phase. In the technical scheme of the utility model, by arranging the connecting copper bar, the length of the copper bar between the capacitor and the IGBT can be reduced, so that the parasitic inductance is reduced, and the purpose of improving the performance is further achieved.
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Description

Technical Field

[0001] The utility model relates to the technical field of high-voltage frequency conversion, in particular to a power unit and a frequency converter. Background Art

[0002] At present, the loop length of high-power high-voltage inverters in use is too long, which is prone to parasitic inductance, thereby reducing the performance of the power unit. In related technologies, in order to reduce parasitic inductance, it is usually necessary to install absorption capacitors, which leads to more processing steps for the power unit and increases production costs. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art or related technology.

[0004] In view of this, an embodiment of a first aspect of the present invention provides a power unit.

[0005] An embodiment of a second aspect of the utility model provides a frequency converter.

[0006] In order to achieve the above-mentioned purpose, an embodiment of the first aspect of the utility model provides a power unit, including: a heat dissipation component, including a heat sink and a plurality of insulated gate bipolar transistors arranged on the heat sink, and the plurality of insulated gate bipolar transistors are arranged side by side; a capacitor component, including a support member and a plurality of capacitors arranged on the support member; a connecting copper bus, one end of the connecting copper bus is connected to the insulated gate bipolar transistor, and the other end is connected to the capacitor component; wherein the connecting copper bus includes an extension portion, the extension portion extends toward the heat dissipation component, and one end of the extension portion extends toward at least two insulated gate bipolar transistors arranged side by side, and the end of the extension portion is provided with a contact portion connected to the wiring point of the insulated gate bipolar transistor with the same phase.

[0007] The power unit proposed according to the utility model mainly includes a heat dissipation component, a capacitor component and a connecting copper bar, wherein the heat dissipation component includes a heat sink and a plurality of IGBTs, i.e., a plurality of insulated gate bipolar transistors, and the heat sink mainly acts to dissipate heat, and transfers the heat generated by an electronic device (e.g., a transistor) to the surrounding environment to prevent the device from overheating. The insulated gate bipolar transistor is used for power control. By arranging them side by side on the heat sink, it helps to dissipate heat effectively, and they can control the flow of electricity in an efficient manner in the circuit. The capacitor component includes a support member and a capacitor, and the support member is used to provide support and structural stability to ensure that the capacitor component is well installed and positioned in the device. It can be understood that the capacitor is used to store charge and provide instantaneous current, which helps to stabilize the transmission of voltage and current. In addition, the insulated gate bipolar transistor and the capacitor can be effectively connected by setting the connecting copper bar, that is, the transistor in the heat dissipation component is connected to the capacitor component by connecting the copper bar, which helps to provide effective current and voltage transmission in the circuit. It should be emphasized that there is an extension in the connecting copper bar, which extends to the vicinity of the heat sink and is connected to the insulated gate bipolar transistor, which can better control the transmission of current and heat. By providing a contact portion at one end of the extension portion, the contact portion can be connected to a connection point with the insulated gate bipolar transistor of the same phase, thereby ensuring a correct connection with the transistor.

[0008] It can be understood that this solution achieves the purpose of improving performance by optimizing the design of the heat dissipation component and the capacitor component, that is, reducing the length of the copper bar connecting the capacitor and the IGBT to reduce the parasitic inductance. It can improve the performance of the device and make it more efficient in processing power and current.

[0009] The design and structural layout of the connecting copper busbars help ensure stable and balanced circuit connections for the equipment, improving the reliability and stability of the system. By designing a reasonable circuit layout, the demand for absorption capacitors in the system can be reduced, thereby reducing costs.

[0010] The overall purpose of these structures and designs is to improve the efficiency, stability and reliability of the power unit while reducing costs.

[0011] In the above technical solution, the connecting copper busbar includes a stacked positive plate, a negative plate and an insulating paper located between the positive plate and the negative plate; wherein the positive plate and the negative plate are disconnected at the connection points corresponding to different phase insulated gate bipolar transistors.

[0012] In this technical solution, the connecting copper busbar itself is in a stacked shape, that is, it includes a positive plate, a negative plate and insulating paper. Due to the stacked design, the positive and negative copper busbars can be arranged side by side, and the parasitic inductance can be reduced with the largest possible stacking area. On this basis, it is supplemented that the connection points of the positive plate and the negative plate corresponding to the insulated gate bipolar transistors of different phases are disconnected, that is, the copper busbars between the two groups of parallel IGBTs of different phases are not connected, thereby ensuring current sharing and improving performance.

[0013] It should be added that the insulating paper between the positive and negative plates helps isolate the connection points of the insulated gate bipolar transistors of different phases, ensuring that the currents between different phases will not be directly mixed or short-circuited, keeping the system current flowing in the correct path.

[0014] Of course, by reasonably designing the stacking structure and materials, the parasitic capacitance and inductance of the stacked copper busbar can be effectively reduced, which helps to improve the response speed of the circuit and reduce the noise in the circuit.

[0015] The cascade setting helps ensure the safety and current balance of the connection, avoids current overload and heat concentration, and improves the stability of the system.

[0016] In the above technical solution, a plurality of insulated gate bipolar transistors are arranged at intervals in a first direction of the heat sink, and each insulated gate bipolar transistor extends along a second direction of the heat sink; wherein the first direction is perpendicular to the second direction.

[0017] In this technical solution, multiple insulated gate bipolar transistors are arranged in a first direction of the heat sink at intervals, which helps to increase the heat dissipation surface area and improve the heat dissipation efficiency of the entire system. This helps to reduce the operating temperature of the transistors, thereby improving the stability and reliability of the device. In addition, extending multiple transistors along the second direction of the heat sink helps to disperse heat and prevent hot spots from concentrating, thereby reducing the risk of failures that may be caused by excessive local heat.

[0018] Of course, the spacing arrangement in the first direction helps to prevent mutual interference between different transistors and ensure the working stability of each transistor.

[0019] In the above technical solution, the distances between the connection points of the two insulated gate bipolar transistors in the same phase and the capacitor component are the same.

[0020] In this technical solution, keeping the connection point at the same distance from the capacitor component helps ensure that the current paths of the same-phase transistors are substantially equal. This can maintain a more uniform current distribution on the same phase, reduce the problems that may be caused by current imbalance, and improve the stability and reliability of the system. In addition, keeping the distance from the connection point to the capacitor component the same helps ensure the balance of the circuit design. This balance can prevent uneven current distribution caused by asymmetric layout between circuit elements.

[0021] It can be understood that maintaining the same distance between the wiring points of the same-phase transistors and the capacitor components helps to reduce electromagnetic interference between adjacent components, improve the anti-interference capability of the entire system, and also helps to maintain the consistency of electrical characteristics of each component in the same phase, such as voltage distribution and capacitance value, which is beneficial to the stable operation of the entire system.

[0022] In the above technical solution, the difference in current carrying capacity between the two insulated gate bipolar transistors of the same phase is within a first threshold value.

[0023] In this technical solution, the current carrying capacity of the two insulated gate bipolar transistors in the same phase is the same or similar, that is, the difference between the two is kept within the first threshold value, which will maintain the relative consistency of the current carrying capacity of the transistors in the same phase and help ensure the balanced distribution of current in these transistors. This can reduce the problems that may be caused by current imbalance and improve the stability and reliability of the system.

[0024] In addition, it can help maintain the balance of the circuit design. This helps prevent uneven current distribution caused by asymmetric loads between transistors, keeps the current carrying capacity difference within a controllable range, and can reduce thermal failure caused by uneven current carrying capacity. This can reduce the heat generated by the system during operation and improve system efficiency and stability.

[0025] In the above technical solution, a plurality of capacitor contact portions are provided on the connecting copper busbar, and each capacitor contact portion is provided corresponding to a capacitor.

[0026] In this technical solution, by arranging each capacitor contact portion on the connecting copper busbar to correspond to the capacitor, the correct connection of the capacitors and good contact between each other can be ensured, which helps to provide good current transmission and signal transfer in the circuit.

[0027] By properly connecting capacitors, you can reduce the risk of circuit failure or poor performance due to connection problems. Good connections can improve the reliability and stability of the circuit. Of course, ensuring that the capacitor is correctly connected to the circuit can ensure that the storage and release functions of the capacitor can be fully utilized when needed. This is very important for signal transmission, filtering or energy storage in the circuit.

[0028] Additionally, having one capacitor per capacitor contact simplifies maintenance and troubleshooting. If a capacitor needs to be replaced or inspected, it is easier to locate and correct the problem.

[0029] In the above technical solution, the support member is plate-shaped, and the projections of the heat dissipation component and the capacitor component on the plane where the support member is located do not overlap.

[0030] In this technical solution, the support member serves as the basis for carrying and supporting the heat sink and capacitor components, providing strength and stability, and ensuring the structural stability of the entire power unit. Better thermal management can be achieved by separating the heat sink and capacitor components on the plate-shaped support member. Separating the heat sink and capacitor components may help reduce thermal interference between components, thereby managing temperature more effectively.

[0031] In the above technical solution, the connecting copper busbar includes a connecting portion, which is connected to a side of the capacitor away from the supporting member, and the extending portion is arranged on a side of the heat sink where the insulated gate bipolar transistor is arranged.

[0032] In this technical solution, the connection part plays the role of connecting the capacitor in the copper busbar. It provides a connection point between the capacitor and the copper busbar, ensuring that the connection between the capacitor and other components in the power unit is stable and reliable. The connection part is located on the side of the capacitor away from the support. This design can maintain a certain distance between the capacitor and other components, thereby avoiding interference in thermal or electrical performance.

[0033] On this basis, the extension is located on one side of the IGBT on the heat sink. This effectively connects the transistor, connecting the transistor to the copper busbar, helping current transmission and ensuring current stability.

[0034] Under the action of the connection part, the connection between the capacitor pool and the IGBT is achieved under the premise of ensuring the current carrying capacity and sufficient creepage distance and electrical clearance.

[0035] In the above technical solution, there is a bending portion between the connecting portion and the extending portion, and there is an overlapping portion between the heat dissipation component and the capacitor component in a third direction that is perpendicular to the first direction and perpendicular to the second direction.

[0036] In this technical solution, by providing a bending portion, the connection distance can be shortened, and at the same time, the distance from the same connection point of two IGBTs in the same phase to the capacitor pool can be made the same, thereby ensuring that the current carrying capacity of the two IGBTs in the same phase is the same / close.

[0037] In addition, the setting of the bent portion can achieve electrical isolation to a certain extent, isolating the electrical signals between the heat dissipation component and the capacitor component while transmitting current, preventing current interference between different components, and improving the stability and performance of the overall circuit.

[0038] It should be emphasized that there is an overlap between the heat dissipation component and the capacitor component in the third direction, so that on the basis of adopting a shorter path, the largest possible stacking area is used to reduce the parasitic inductance and improve the performance of the power unit.

[0039] Of course, the overlapping structural layout may allow for a more compact or more efficient arrangement of the heat sink and capacitor components, thereby optimizing the overall assembly structure.

[0040] An embodiment of a second aspect of the utility model provides a frequency converter, comprising: a power unit of the embodiment of the first aspect mentioned above.

[0041] The frequency converter provided by the utility model includes a power unit, which plays a role in converting electric energy in the frequency converter and is responsible for converting electric energy from a power supply into an output of a specific frequency and voltage to drive a motor or other equipment.

[0042] Since the frequency converter includes a power unit, it has the beneficial effects of any power unit in the above-mentioned first aspect embodiment, which will not be described in detail here.

[0043] Additional aspects and advantages of the present invention will become apparent in the following description or will be understood through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 A schematic diagram of the structure of a power unit according to an embodiment of the utility model is shown;

[0045] Figure 2 A schematic diagram of the structure of a power unit according to an embodiment of the utility model is shown;

[0046] Figure 3 A schematic structural diagram of a heat dissipation assembly according to an embodiment of the utility model is shown;

[0047] Figure 4 A schematic structural diagram of a capacitor assembly according to an embodiment of the utility model is shown;

[0048] Figure 5 A schematic structural diagram of a connecting copper busbar according to an embodiment of the utility model is shown;

[0049] Figure 6 A schematic structural diagram of a connecting copper busbar according to an embodiment of the utility model is shown;

[0050] Figure 7 A schematic structural diagram of a frequency converter according to an embodiment of the utility model is shown.

[0051] in, Figures 1 to 7 The corresponding relationship between the reference numerals and the component names is as follows:

[0052] 100: power unit; 102: heat dissipation component; 1022: heat sink; 1024: insulated gate bipolar transistor; 104: capacitor component; 1042: support member; 1044: capacitor; 106: connecting copper bus; 1062: extension portion; 1063: contact portion; 1064: capacitor contact portion; 1066: connecting portion; 1068: bending portion; 1072: positive plate; 1074: negative plate; 1076: insulating paper;

[0053] 200: Inverter. DETAILED DESCRIPTION

[0054] In order to more clearly understand the above-mentioned purposes, features and advantages of the embodiments of the present invention, the embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0055] In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the embodiments of the present invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present application is not limited to the specific embodiments disclosed below.

[0056] Refer to the following Figures 1 to 7 Some embodiments according to the present invention are described.

[0057] like Figure 1 As shown, a power unit 100 proposed in this embodiment mainly includes a heat dissipation component 102, a capacitor component 104 and a connecting copper bus 106, wherein the heat dissipation component 102 includes a heat sink 1022 and a plurality of IGBTs, i.e., a plurality of insulated gate bipolar transistors 1024. The heat sink 1022 mainly functions to dissipate heat, transferring the heat generated by electronic equipment (such as transistors) to the surrounding environment to prevent the equipment from overheating. The insulated gate bipolar transistors 1024 are used for power control. By arranging them side by side on the heat sink 1022, it helps to dissipate heat effectively, and they can control the flow of electricity in the circuit in an efficient manner. As shown in FIG. Figure 4As shown, capacitor assembly 104 includes support member 1042 and capacitor 1044, and support member 1042 is used to provide support and structural stability, and guarantees that capacitor assembly 104 is well installed and positioned in equipment. It is understandable that capacitor 1044 is used to store charge and provide instantaneous current, and helps to smoothly transmit voltage and current. In addition, by setting connection copper bar 106, insulated gate bipolar transistor 1024 and capacitor 1044 can be effectively connected, that is, transistor in heat dissipation assembly 102 is connected with capacitor assembly 104 by connection copper bar 106, and helps to provide effective current and voltage transmission in circuit. It should be emphasized that there is extension 1062 in connection copper bar 106, and this part will extend to the vicinity of radiator 1022, and be connected to insulated gate bipolar transistor 1024, and can better control the transmission of current and heat. By arranging contact portion 1063 at one end of extension portion 1062, it can be connected to the wiring point with insulated gate bipolar transistor 1024 in the same phase through contact portion 1063, and ensure the correct connection with transistor.

[0058] in, Figure 2 The first IGBT and the second IGBT from top to bottom are insulated gate bipolar transistors of the same phase.

[0059] It can be understood that this solution achieves the purpose of improving performance by optimizing the design of the heat dissipation component 102 and the capacitor component 104, that is, reducing the length of the connecting copper bar 106 between the capacitor 1044 and the IGBT to reduce the parasitic inductance. The performance of the device can be improved so that it can process power and current more efficiently.

[0060] The design and structural layout of the connecting copper bus 106 help ensure stable and balanced circuit connection of the device, thereby improving the reliability and stability of the system. By designing a reasonable circuit layout, the demand for absorption capacitor 1044 in the system can be reduced, thereby reducing costs.

[0061] The overall purpose of these structures and designs is to improve the efficiency, stability and reliability of the power unit 100 while reducing the cost.

[0062] In one embodiment, the connecting copper bus 106 is optionally in a stacked shape, that is, it includes a positive plate 1072, a negative plate 1074 and an insulating paper 1076. Due to the stacked design, the positive and negative copper busbars can be arranged side by side, and the parasitic inductance can be reduced with as large a stacking area as possible. On this basis, the positive plate 1072 and the negative plate 1074 are disconnected from the connection points of the insulated gate bipolar transistors 1024 of different phases, that is, the copper busbars between the two parallel IGBTs of different phases are ensured to be disconnected, for example Figure 2In the embodiment, the first IGBT and the third IGBT from top to bottom are in different phases, and the second IGBT and the fourth IGBT from top to bottom are in different phases, thereby ensuring current sharing and improving performance.

[0063] It should be added that the insulating paper 1076 between the positive plate 1072 and the negative plate 1074 helps to isolate the connection points of the insulated gate bipolar transistors 1024 of different phases, ensuring that the currents between different phases will not be directly mixed or short-circuited, and keeping the system current flowing in the correct path.

[0064] Of course, by properly designing the stacked structure and materials, the parasitic capacitance 1044 and inductance of the stacked copper busbar can be effectively reduced, which helps to improve the response speed of the circuit and reduce the noise in the circuit.

[0065] The cascade setting helps ensure the safety and current balance of the connection, avoids current overload and heat concentration, and improves the stability of the system.

[0066] In one embodiment, optionally, Figure 3 As shown, multiple insulated gate bipolar transistors 1024 are spaced apart in the first direction of the heat sink 1022, which helps to increase the heat dissipation surface area and improve the heat dissipation efficiency of the entire system. This helps to reduce the operating temperature of the transistors, thereby improving the stability and reliability of the device. In addition, extending multiple transistors along the second direction of the heat sink 1022 helps to disperse heat and prevent hot spots from concentrating, thereby reducing the risk of failure that may be caused by excessive local heat.

[0067] It can be understood that the designed vertical layout may help optimize air flow and increase the air coverage area of ​​the heat sink 1022, thereby increasing heat dissipation.

[0068] Of course, the spacing arrangement in the first direction helps to prevent mutual interference between different transistors and ensure the working stability of each transistor.

[0069] In one embodiment, optionally, the wiring points of the two insulated gate bipolar transistors 1024 of the same phase are at the same distance from the capacitor assembly 104, that is, under the effect of the extension of the copper bar, the wiring points of the two insulated gate bipolar transistors 1024 are quasi-symmetrical about the extension between the two, and the distance is the same. Keeping the same distance between the wiring points and the capacitor assembly 104 helps to ensure that the current paths of the transistors in the same phase are basically equal. This can maintain a more uniform current distribution on the same phase, reduce the problems that may be caused by current imbalance, and improve the stability and reliability of the system. In addition, keeping the distance between the wiring points and the capacitor assembly 104 the same helps to ensure the balance of the circuit design. This balance can prevent the uneven current distribution caused by the asymmetric layout between the circuit elements.

[0070] It can be understood that maintaining the same distance between the connection points of the same-phase transistors and the capacitor component 104 helps to reduce electromagnetic interference between adjacent components, improve the anti-interference capability of the entire system, and also helps to maintain the consistency of electrical characteristics of each component in the same phase, such as voltage distribution and capacitance value, which is beneficial to the stable operation of the entire system.

[0071] In one embodiment, optionally, the current carrying capacity of the two insulated gate bipolar transistors 1024 in the same phase is the same or similar, that is, the difference between the two is kept within the first threshold value, which will maintain the relative consistency of the current carrying capacity of the in-phase transistors and help ensure the balanced distribution of current in these transistors. Doing so can reduce the problems that may be caused by current imbalance and improve the stability and reliability of the system.

[0072] In addition, it can help maintain the balance of the circuit design. This helps prevent uneven current distribution caused by asymmetric loads between transistors, keeps the current carrying capacity difference within a controllable range, and can reduce thermal failure caused by uneven current carrying capacity. This can reduce the heat generated by the system during operation and improve system efficiency and stability.

[0073] In one embodiment, optionally, each capacitor contact portion 1064 on the connecting copper bus 106 is arranged corresponding to the capacitor 1044, which can ensure the correct connection of the capacitors 1044 and good contact with each other, and help provide good current transmission and signal transfer in the circuit.

[0074] By properly connecting capacitor 1044, the risk of circuit failure or poor performance due to connection problems can be reduced. A good connection can improve the reliability and stability of the circuit. Of course, ensuring that capacitor 1044 is properly connected to the circuit can ensure that the storage and release functions of capacitor 1044 can be fully utilized when needed. This is very important for signal transmission, filtering, or energy storage in the circuit.

[0075] In addition, each capacitor contact 1064 corresponds to a capacitor 1044, which can simplify maintenance and troubleshooting. If the capacitor 1044 needs to be replaced or inspected, it will be easier to locate and deal with the problem.

[0076] In one embodiment, optionally, the support member 1042 serves as a basis for carrying and supporting the heat dissipation assembly 102 and the capacitor assembly 104, providing strength and stability, and ensuring the structural stability of the entire power unit 100. Better thermal management can be achieved by separating the heat dissipation assembly 102 and the capacitor assembly 104 on the plate-shaped support member 1042. Separating the heat dissipation assembly 102 and the capacitor assembly 104 may help reduce thermal interference between the components, thereby more effectively managing temperature.

[0077] In one embodiment, optionally, Figure 6 As shown, by providing the connection part 1066, the copper busbar 106 can be connected to the capacitor 1044. It provides a connection point between the capacitor 1044 and the copper busbar, ensuring that the connection between the capacitor 1044 and other components in the power unit 100 is stable and reliable. In the extension direction of the capacitor 1044, the connection part 1066 is located on the side of the capacitor 1044 away from the support member 1042, that is, one end of the capacitor is provided with the support member 1042, and the other end is in contact with the connection part 1066. This design can maintain a certain distance between the capacitor 1044 and other components, thereby avoiding interference in thermal or electrical performance.

[0078] On this basis, the extension 1062 is located on one side of the insulated gate bipolar transistor 1024 on the heat sink 1022. This can effectively connect to the transistor, connect the transistor to the copper bus, facilitate current transmission and ensure current stability.

[0079] Under the action of the connection part 1066, the connection between the capacitor pool and the IGBT is achieved under the premise of ensuring the current carrying capacity and sufficient creepage distance and electrical clearance.

[0080] In one embodiment, optionally, Figure 5 As shown, by providing the bending portion 1068, the connection distance can be shortened, and at the same time, the distance from the same connection point of the two IGBTs in the same phase to the capacitor pool can be made the same, thereby ensuring that the current carrying capacity of the two IGBTs in the same phase is the same / close.

[0081] In addition, the setting of the bent portion 1068 can achieve electrical isolation to a certain extent, isolating the electrical signals between the heat dissipation component 102 and the capacitor component 104 during current transmission, preventing current interference between different components, and improving the stability and performance of the overall circuit.

[0082] It should be emphasized that the heat dissipation component 102 and the capacitor component 104 have an overlapping portion in the third direction, so that on the basis of adopting a shorter path, the largest possible stacking area is used to reduce the parasitic inductance and improve the performance of the power unit 100.

[0083] Of course, the overlapping structural layout may allow for a more compact or more efficient arrangement of the heat dissipation assembly 102 and the capacitor assembly 104, thereby optimizing the overall assembly structure.

[0084] In a specific embodiment, a simulated stacking scheme of two parallel IGBTs of a high-power high-voltage inverter power unit is proposed, which is composed of three modules assembled together, namely a heat sink component (i.e., a heat dissipation component), a capacitor component, and a simulated stacking copper bus (i.e., a connecting copper bus).

[0085] In this embodiment, the capacitor is connected to the IGBT through the imitation laminated copper busbar, which shortens the length of the main circuit, reduces the parasitic inductance, and improves the performance of the power unit. On the other hand, it ensures the current sharing of the copper busbar and the device, and improves the stability of the product. At the same time, because the parasitic inductance of the main circuit is low enough, it is not necessary to install the absorption capacitor, which reduces the unit cost.

[0086] Specifically, the simulated laminated copper busbar solution of the high-voltage inverter power unit includes: a heat sink assembly, which is composed of a heat sink and IGBTs installed thereon, arranged in a side-by-side manner on the heat sink. A capacitor assembly, which is composed of a capacitor installed in a capacitor support and fixed firmly, and a simulated laminated copper busbar that fixedly connects the IGBT, rectifier bridge and capacitor assembly on the heat sink assembly to form a loop.

[0087] Among them, the form of the simulated laminated copper busbar from the capacitor to the IGBT is adjusted, the positive plate and the negative plate of the simulated laminated copper busbar and the insulating paper sandwiched therebetween are extended to the middle position of the same-phase IGBT in an overlapping form, and then the contact parts are separated and connected to the wiring points on the corresponding IGBT, thereby achieving the purpose of reducing parasitic inductance.

[0088] In addition, the purpose of current equalization is achieved by disconnecting the contact parts of the positive plate and the negative plate of the simulated laminated copper busbar that are in different phases.

[0089] Adjust the installation direction of the IGBT on the heat sink so that the distance from the same connection point of the two IGBTs in the same phase to the capacitor pool is the same, making the current carrying capacity of the two IGBTs the same / close.

[0090] In this embodiment, a simulated laminated copper busbar is used between the two IGBTs connected in parallel with the same phase and the capacitor, and the laminated area is as large as possible to reduce the parasitic inductance. At the same time, the copper busbars between the two groups of parallel IGBTs with different phases are not connected to ensure current sharing.

[0091] In the specific implementation, a large area of ​​thin copper plate is used to achieve the connection between the capacitor pool and the IGBT while ensuring the current carrying capacity and sufficient creepage distance and electrical clearance.

[0092] The arrangement of IGBTs and capacitors ensures that the distance from the same connection point of two IGBTs in the same phase to the capacitor pool is the same, ensuring that the current carrying capacity of the two IGBTs in the same phase is the same / close.

[0093] like Figure 7 As shown, this embodiment proposes a frequency converter 200, including a power unit 100. The power unit plays a role in converting electric energy in the frequency converter, and is responsible for converting electric energy from a power source into an output of a specific frequency and voltage to drive a motor or other equipment.

[0094] Since the frequency converter includes a power unit, it has the beneficial effects of any power unit in the above-mentioned first aspect embodiment, which will not be described in detail here.

[0095] According to the power unit and the frequency converter provided by the utility model, by providing a connecting copper busbar, the length of the copper busbar between the capacitor and the IGBT can be reduced, thereby reducing the parasitic inductance, thereby achieving the purpose of improving performance.

[0096] In the present invention, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance; the term "plurality" refers to two or more, unless otherwise clearly defined. The terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; "connected" can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

[0097] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by terms such as "up", "down", "left", "right", "front" and "back" are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific orientation, and therefore, cannot be understood as a limitation on the present invention.

[0098] In the description of this specification, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0099] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A power unit, characterized in that: include: A heat dissipation component, comprising a heat sink and a plurality of insulated gate bipolar transistors arranged on the heat sink, wherein the plurality of insulated gate bipolar transistors are arranged side by side; A capacitor assembly, comprising a support member and a plurality of capacitors disposed on the support member; A connecting copper bar, one end of which is connected to the insulated gate bipolar transistor, and the other end of which is connected to the capacitor component; The connecting copper busbar includes an extension portion, which extends toward the heat dissipation assembly, and one end of the extension portion extends toward at least two of the insulated gate bipolar transistors arranged side by side, and the end of the extension portion is provided with a contact portion connected to the wiring point of the insulated gate bipolar transistors of the same phase.

2. The power unit according to claim 1, characterized in that: The connecting copper busbar comprises a positive electrode plate and a negative electrode plate which are stacked and an insulating paper located between the positive electrode plate and the negative electrode plate; Wherein, the connection points of the positive plate and the negative plate corresponding to the insulated gate bipolar transistors of different phases are disconnected.

3. The power unit according to claim 1, characterized in that: A plurality of the insulated gate bipolar transistors are arranged at intervals in a first direction of the heat sink, and each of the insulated gate bipolar transistors extends along a second direction of the heat sink; The first direction is perpendicular to the second direction.

4. The power unit according to claim 3, characterized in that: The connection points of the two insulated gate bipolar transistors in the same phase are at the same distance from the capacitor component.

5. The power unit according to claim 1, characterized in that: The difference in current carrying capacity between the two insulated gate bipolar transistors of the same phase is within a first threshold.

6. The power unit according to claim 1, characterized in that: The connecting copper bus is provided with a plurality of capacitor contact portions, and each of the capacitor contact portions is arranged corresponding to the capacitor.

7. The power unit according to claim 1, characterized in that: The support member is plate-shaped, and projections of the heat dissipation component and the capacitor component on the plane where the support member is located do not overlap.

8. The power unit according to claim 3, characterized in that: The connecting copper busbar comprises a connecting portion, the connecting portion is connected to a side of the capacitor away from the supporting member, and the extending portion is arranged on a side of the heat sink where the insulated gate bipolar transistor is arranged.

9. The power unit according to claim 8, characterized in that: A bending portion is provided between the connecting portion and the extending portion, and an overlapping portion exists between the heat dissipation component and the capacitor component in a third direction which is perpendicular to the first direction and perpendicular to the second direction.

10. A frequency converter, characterized in that: include: A power unit as claimed in any one of claims 1 to 9.