Zero-dimensional material filtering structure and spectrum chip

Abstract

The utility model provides a zero-dimensional material filtering structure and a spectrum chip. A plurality of optical channels are formed in the zero-dimensional material filtering structure, the zero-dimensional material filtering structure comprises a substrate, a plurality of optical channel areas are arranged on the surface of the substrate, the optical channel areas correspond to the optical channels in a one-to-one mode, and a zero-dimensional material film is arranged at each optical channel area. The thicknesses of the zero-dimensional material films at the optical channel areas are different, the thickness of the zero-dimensional material films ranges from 0.1 nm to 100 nm, and the zero-dimensional material films are element simple substance films or element compound films or mixture films. According to the zero-dimensional material filtering structure, the overall thickness of the filtering structure can be effectively reduced.

Description

Technical Field

[0001] The present application relates to the technical field of optical filtering structures, and in particular to a zero-dimensional material optical filtering structure and a spectral chip. Background Art

[0002] At present, the mainstream approach to the filter structure of CMOS spectral chips is to stack N layers of dielectric films. Each layer of dielectric film contains different material components (such as a compound of a rare metal), and the thickness of each layer of dielectric film is also different. By adjusting the material composition and thickness of the dielectric film, as well as the order of up and down arrangement, a filter structure that only allows light of a specific wavelength to pass is obtained.

[0003] The thickness of the dielectric film filter structure in the related art is as high as 1-2 μm, which is relatively thick. Utility Model Content

[0004] The embodiments of the present application provide a zero-dimensional material filter structure and a spectrum chip, which can improve the technical problem of the large thickness of the dielectric film filter structure.

[0005] In a first aspect, an embodiment of the present application provides a zero-dimensional material filter structure, which is formed with multiple optical channels, including:

[0006] A substrate, wherein a plurality of optical channel regions are provided on the surface of the substrate, and the plurality of optical channel regions correspond one to one to the plurality of optical channels;

[0007] A zero-dimensional material film is provided at each optical channel region, and the thickness of the zero-dimensional material film at multiple optical channel regions is different. The thickness of the zero-dimensional material film is between 0.1nm and 100nm. The zero-dimensional material film is an element single substance film, an element compound film, or a mixture film.

[0008] In one embodiment, the zero-dimensional material film is disposed in the optical channel region by deposition or plating.

[0009] In one embodiment, the zero-dimensional material filter structure includes an R channel, a G channel and a B channel, and the thicknesses of the zero-dimensional material films at the optical channel regions corresponding to the R channel, the G channel and the B channel are all different.

[0010] In one embodiment, the thickness of the zero-dimensional material film in each of the optical channel regions is different.

[0011] In one embodiment, the plurality of optical channel regions are distributed in sequence along the thickness of the zero-dimensional material film from large to small.

[0012] In one embodiment, the surface of the substrate is provided with at least two rows and at least two columns of the optical channel areas.

[0013] In one embodiment, the zero-dimensional material film has a thickness of 2nm-15nm.

[0014] In one embodiment, the zero-dimensional material films at the plurality of optical channel regions are integrally formed.

[0015] In one embodiment, the thickness of the zero-dimensional material film in the same optical channel region is the same.

[0016] In a second aspect, an embodiment of the present application provides a spectral chip, comprising the above-mentioned zero-dimensional material filtering structure.

[0017] Beneficial effects of the embodiments of the present application:

[0018] In an embodiment of the present application, an element single substance film or an element compound film is arranged at the optical channel region of the substrate, and a filter unit is constructed at the optical channel region using the element single substance film or the element compound film, and the thickness of the element single substance film or the element compound film at multiple optical channel regions is different, and the central wavelength of the optical channel of the filter unit formed by the element single substance film or the element compound film of different thicknesses is also different, that is, different filter units are constructed using the element single substance film or the element compound film at multiple optical channel regions, so that the zero-dimensional material filter structure has multiple channels. The present application arranges an element single substance film or an element compound film on the surface of the substrate, and constructs a filter structure using the element single substance film or the element compound film. Compared with the use of a dielectric film to construct a filter structure in the related art, since the thickness of a single layer of element single substance or element compound is smaller than the dielectric film, while ensuring that the thickness of the element single substance film or the element compound film at multiple optical channel regions is different, the overall thickness of the filter structure can be effectively reduced, so that the thickness of the zero-dimensional material filter structure is smaller than the thickness of the filter structure in the related art. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0020] Figure 1 This is one of the flow charts of the method for preparing the zero-dimensional material filter structure provided in the embodiments of the present application;

[0021] Figure 2 This is the second flow chart of the method for preparing the zero-dimensional material filter structure provided in the embodiment of the present application;

[0022] Figure 3 This is the third flow chart of the method for preparing the zero-dimensional material filter structure provided in the embodiment of the present application;

[0023] Figure 4 is a schematic diagram of the structure of a zero-dimensional material filter structure provided in an embodiment of the present application, wherein a larger number in the figure indicates a larger thickness of the element single substance film or element compound film at that position;

[0024] Figure 5 It is a structural schematic diagram of a zero-dimensional material filtering structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the directional words such as "upper" and "lower" used generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inside" and "outside" refer to the outline of the device.

[0026] Combine the following Figures 1 to 5 The zero-dimensional material filter structure and spectral chip of the present application are described.

[0027] According to the embodiment of the first aspect of the present application, Figure 1 , the preparation method of the zero-dimensional material filter structure includes:

[0028] Step 101, obtaining a substrate 1, wherein a plurality of optical channel regions are provided on the surface of the substrate 1, and the plurality of optical channel regions correspond one to one to the plurality of optical channels of the zero-dimensional material filter structure;

[0029] It can be understood that the surface of the substrate 1 is provided with a plurality of optical channel regions, each of which corresponds to an optical channel of a zero-dimensional material filter structure. Dividing the surface of the substrate 1 into a plurality of optical channel regions facilitates the subsequent formation of corresponding filter units in different optical channel regions, thereby forming a filter structure having a plurality of optical channels on the surface of the substrate 1.

[0030] It can be understood that the surface of the substrate 1 is provided with multiple optical channel areas, which can be formed by providing corresponding dividing lines on the surface of the substrate 1, or the surface of the substrate 1 can be divided into multiple areas at the operating end without directly providing dividing lines on the surface of the substrate 1.

[0031] Step 102: depositing a zero-dimensional material on the surface of substrate 1, wherein the zero-dimensional material includes a simple substance of at least one element and / or a compound of at least one element, and the deposition times in different optical channel regions are different to form filter structures of different thicknesses in multiple optical channel regions, and the thickness of the filter structure is between 0.1 nm and 100 nm.

[0032] It can be understood that after obtaining a substrate 1 having multiple optical channel regions, different times of zero-dimensional materials are deposited at different optical channel regions, thereby forming zero-dimensional materials of different thicknesses at multiple optical channel regions. The zero-dimensional material at each optical channel region can play a filtering role, and zero-dimensional materials of different thicknesses allow different light to pass through, that is, zero-dimensional materials of different thicknesses correspond to different central wavelengths of optical channels. In other words, by depositing zero-dimensional materials at the optical channel region, a filtering structure can be formed at the optical channel region, that is, a filtering structure can be constructed on the surface of the substrate 1.

[0033] It can be understood that since the thickness of a single layer of elemental simple substance and / or elemental compound is at the nanometer scale, the present application can adjust the thickness of the filter structure composed of elemental simple substance and / or elemental compound at the nanometer scale, thereby reducing the thickness of the filter structure while ensuring that the thickness of the elemental simple substance and / or elemental compound in multiple optical channel regions is different, so that the thickness of the filter structure can be between 0.1nm and 100nm.

[0034] It can be understood that the thickness of the element single substance and / or element compound in the same optical channel region is the same, which ensures the filtering performance of the element single substance and / or element compound formed in the optical channel region.

[0035] It can be understood that the zero-dimensional material includes a simple substance of at least one element and / or a compound of at least one element, which means that the zero-dimensional material can be at least one of a simple substance of an element, a compound of an element, and a mixture.

[0036] According to the preparation method of the zero-dimensional material filter structure of the embodiment of the present application, by depositing zero-dimensional material at the optical channel area of ​​the substrate 1, the zero-dimensional material at each optical channel area constitutes a filter unit, and the filter units formed at all optical channel areas together constitute the zero-dimensional material filter structure. By controlling the deposition times at different optical channel areas, while all optical channel areas of the substrate 1 are deposited with zero-dimensional material, the thickness of the zero-dimensional material at multiple optical channel areas is different, and then filter units with different central wavelengths of the optical channel can be formed at multiple optical channel areas. The present application forms a filter structure by depositing zero-dimensional material to replace the use of stacked dielectric films to form filter units in the related art. Since the single layer thickness of the element single substance and / or element compound is smaller than that of the dielectric film, the thickness of the zero-dimensional material corresponding to different filter units can be adjusted on a smaller scale, thereby ensuring that the thickness of the zero-dimensional material of multiple filter units is different while reducing the overall thickness of the filter structure, which can effectively reduce the thickness of the zero-dimensional material filter structure, and the filter structure can be formed by arranging the zero-dimensional material at the optical channel area by deposition or plating, which simplifies the processing process of the filter structure and improves production efficiency.

[0037] It can be understood that since the present application forms the filter structure by depositing elemental simple substances and / or elemental compounds, the thickness of the obtained filter structure is nanometer-level. Compared with the dielectric film filter structure in the related art, the thickness of the filter structure of the present application is smaller.

[0038] In one embodiment of the present application, Figure 3 , depositing a zero-dimensional material on the surface of substrate 1, comprising:

[0039] Step 301, obtaining the central wavelength of each optical channel;

[0040] Step 302: Determine the target thickness of the zero-dimensional material at each optical channel region based on the central wavelength of each optical channel;

[0041] Step 303 : depositing elemental simple substances and / or elemental compounds on the surface of substrate 1 based on the target thickness of the zero-dimensional material at each optical channel region.

[0042] It is understandable that when depositing zero-dimensional material on the surface of substrate 1, the central wavelength of each optical channel will be obtained first, and the target thickness of the zero-dimensional material at the optical channel area corresponding to the optical channel can be determined based on the central wavelength of the optical access, and then the element single substance and / or element compound are deposited on the surface of substrate 1 according to the target thickness of the zero-dimensional material corresponding to the optical channel area, so as to form element single substances and / or element compounds with target thickness in the optical channel area. This embodiment can accurately form zero-dimensional materials of different thicknesses in different optical channel areas by depositing element single substances and / or element compounds on the surface of substrate 1 according to the target thickness of the zero-dimensional material corresponding to each optical channel area.

[0043] It can be understood that based on the target thickness of the zero-dimensional material in each optical channel area, the number of depositions corresponding to each optical channel area can be determined, and the deposition of elemental substances and / or elemental compounds can be controlled according to the number of depositions, so that elemental substances and / or elemental compounds with corresponding target thicknesses can be accurately formed in each optical channel area.

[0044] It can be understood that zero-dimensional materials of different thicknesses correspond to different central wavelengths of optical channels, and thus the thickness of the zero-dimensional material can be determined according to the required central wavelength of the optical channel.

[0045] In one embodiment of the present application, the target thickness of the zero-dimensional material at each optical channel region is arranged in order from small to large as T 1 、T 2 、T 3 ......T n , depositing a zero-dimensional material on the surface of substrate 1, comprising:

[0046] T is deposited on the surface of substrate 1. 1 Thick zero-dimensional materials;

[0047] To T 1 Optical channel area mask corresponding to thickness;

[0048] T is deposited on the surface of substrate 1. i -T i-1 Zero-dimensional material of thickness, where 2≤i≤n;

[0049] To T i Optical channel area mask corresponding to thickness, where i≤n-1;

[0050] Repeatedly deposit T on the surface of substrate 1 i -T i-1 Thickness of zero-dimensional material steps and T i The thickness of the optical channel area corresponds to the mask step until T nThe optical channel area corresponding to the thickness is deposited with T n Thickness of zero-dimensional material.

[0051] It can be understood that the target thickness of the zero-dimensional material to be deposited in each optical channel region can be determined according to the central wavelength of the optical channel corresponding to each optical channel region, and the target thickness of the zero-dimensional material to be deposited in each optical channel region is arranged in order from large to small. 1 、T 2 、T 3 ......T n .

[0052] When depositing the zero-dimensional material on the surface of the substrate 1, a layer of T is first deposited on the surface of the entire substrate 1. 1 The target thickness is T. 1 T has been deposited in the optical channel area 1 The target thickness is T 1 The deposition of zero-dimensional material has been completed in the optical channel region. 1 The optical channel area corresponding to the thickness is masked to avoid T 1 Then, T is deposited on the surface of substrate 1. i -T i-1 The thickness of the zero-dimensional material, i increases from 2 to n, that is, T is first deposited on the surface of substrate 1 2 -T 1 The zero-dimensional material of thickness is deposited on the surface of substrate 1. 1 Thickness of zero-dimensional material, then the surface of substrate 1 is deposited with T 2 -T 1 +T1, that is, T 2 Thick zero-dimensional material, indicating that the target thickness is T 2 T has been deposited in the optical channel area 2 Thickness of zero-dimensional material, T 2 The deposition work in the optical channel area corresponding to the thickness has been completed, then T 2 The optical channel area corresponding to the thickness is masked to avoid T when the zero-dimensional material is deposited. 2 The optical channel area corresponding to the thickness is affected. And so on, until the target thickness is T n The optical channel area is deposited with T n Thickness of zero-dimensional material.

[0053] It can be understood that when the target thickness T n The optical channel area is deposited with T nWhen the zero-dimensional material has a thickness of 0.04, it means that the zero-dimensional material filter structure has been constructed and no further zero-dimensional material deposition will be performed. n The optical channel area corresponding to the thickness is masked.

[0054] According to an embodiment of the second aspect of the present application, Figure 2 A method for preparing a zero-dimensional material filter structure is provided, and the method for preparing the zero-dimensional material filter structure comprises:

[0055] Step 201, obtaining a substrate 1, wherein a plurality of optical channel regions are provided on the surface of the substrate 1, and the plurality of optical channel regions correspond one to one to the plurality of optical channels of the zero-dimensional material filter structure;

[0056] It can be understood that the surface of the substrate 1 is provided with a plurality of optical channel regions, each of which corresponds to an optical channel of a zero-dimensional material filter structure. Dividing the surface of the substrate 1 into a plurality of optical channel regions facilitates the subsequent formation of corresponding filter units in different optical channel regions, thereby forming a filter structure having a plurality of optical channels on the surface of the substrate 1.

[0057] It can be understood that the surface of the substrate 1 is provided with multiple optical channel areas, which can be formed by providing corresponding dividing lines on the surface of the substrate 1, or the surface of the substrate 1 can be divided into multiple areas at the operating end without directly providing dividing lines on the surface of the substrate 1.

[0058] Step 202, coating a layer of zero-dimensional material film 2 on the surface of the substrate 1, wherein the zero-dimensional material film 2 includes a single substance of at least one element and / or a compound of at least one element;

[0059] It can be understood that in order to make multiple optical channel areas correspond to multiple optical channels one by one, the thickness of the zero-dimensional material film 2 to be plated at the multiple optical channel areas is different. Since the thickness of the zero-dimensional material film 2 corresponding to different optical channels is different, the thickness of the zero-dimensional material film 2 plated on the surface of the substrate 1 must be greater than or equal to the maximum thickness of the zero-dimensional material film 2 to be plated at the multiple optical channel areas, so as to facilitate the subsequent etching of multiple different thickness areas on the zero-dimensional material film 2.

[0060] Step 203 , etching the zero-dimensional material film 2 to form filter structures with different thicknesses in multiple optical channel regions, wherein the thickness of the filter structures is between 0.1 nm and 100 nm.

[0061] It can be understood that the zero-dimensional material film 2 on the surface of the substrate 1 is etched to reduce the thickness of the zero-dimensional material film 2 in multiple optical channel areas, so that the thickness of the zero-dimensional material film 2 in each optical channel area is at the required target thickness, so that a filter unit can be formed in each optical channel area. Since the thickness of the element single substance and / or element compound in different optical channel areas is different, the optical channels corresponding to different optical channel areas are also different, thereby forming a multi-channel filter structure on the surface of the substrate 1.

[0062] It is understandable that the zero-dimensional material films 2 corresponding to multiple or all optical channel regions may be etched simultaneously, or the zero-dimensional material film 2 corresponding to one of the optical channel regions may be etched separately.

[0063] It can be understood that the zero-dimensional material film 2 can be an element single substance film or an element compound film or a mixture film.

[0064] According to the preparation method of the zero-dimensional material filter structure of the present application, a layer of zero-dimensional material film 2 is plated on the surface of the substrate 1, and then the zero-dimensional material film 2 is etched to obtain element single substances and / or element compounds of different thicknesses in different optical channel regions. When etching the zero-dimensional material film 2, only a layer of element single substances and / or element compounds on the surface of the zero-dimensional material film 2 can be etched, that is, compared with the dielectric film in the related art, the present application can adjust the thickness of the zero-dimensional material film 2 on a smaller scale, thereby ensuring that the thickness of the zero-dimensional material film 2 in multiple optical channel regions is different while reducing the overall thickness of the filter structure, which can effectively reduce the thickness of the zero-dimensional material filter structure, and the filter structure can be formed by etching the zero-dimensional material film 2, which simplifies the processing process of the filter structure and improves production efficiency.

[0065] In one embodiment of the present application, etching the zero-dimensional material film 2 includes:

[0066] Get the center wavelength of each optical channel;

[0067] determining a target thickness of the zero-dimensional material at a region of each optical channel based on a central wavelength of each optical channel;

[0068] Based on the target thickness of the zero-dimensional material at each optical channel region, the zero-dimensional material film 2 is etched.

[0069] It is understandable that when etching the zero-dimensional material film 2, the central wavelength of each optical channel will be obtained first, and the target thickness of the zero-dimensional material at the optical channel region corresponding to the optical channel can be determined based on the central wavelength of the optical access, and then the zero-dimensional material film 2 is etched according to the target thickness of the zero-dimensional material corresponding to the optical channel region to form zero-dimensional materials with corresponding target thicknesses at different optical channel regions. This embodiment etches the zero-dimensional material film 2 according to the target thickness of the zero-dimensional material corresponding to each optical channel region, so that zero-dimensional materials with different thicknesses can be accurately formed at different optical channel regions.

[0070] It can be understood that based on the target thickness of the zero-dimensional material in each optical channel area, the number of etching times and / or etching depth corresponding to each optical channel area can be determined. By controlling the etching of the zero-dimensional material film 2 according to the number of etching times and / or etching depth, a zero-dimensional material of the corresponding target thickness can be accurately formed in each optical channel area.

[0071] It can be understood that zero-dimensional materials of different thicknesses correspond to different central wavelengths of optical channels, and thus the thickness of the zero-dimensional material can be determined according to the required central wavelength of the optical channel.

[0072] In one embodiment of the present application, etching the zero-dimensional material film 2 includes:

[0073] Based on the target thickness of the zero-dimensional material at each optical channel region, the zero-dimensional material film 2 at each optical channel region is etched in sequence.

[0074] It can be understood that when etching the zero-dimensional material film 2, according to the target thickness of the zero-dimensional material corresponding to one of the optical channel regions, the zero-dimensional material film 2 at the optical channel region is etched, and the zero-dimensional material film 2 at the optical channel region is etched to the target thickness, thereby completing the processing of the optical channel region, and a corresponding filter unit can be obtained at the optical channel region, and the filter unit is formed with an optical channel corresponding to the optical channel region. Similarly, according to the target thickness of the zero-dimensional material corresponding to other optical channel regions, the zero-dimensional material film 2 at other optical channel regions is etched in turn to obtain zero-dimensional materials of corresponding target thicknesses at other optical channel regions.

[0075] In one embodiment of the present application, the target thickness of the zero-dimensional material at each optical channel region is arranged in order from large to small as A 1 , A 2 , A 3 ......A n , etching the zero-dimensional material film 2, including:

[0076] A1 Optical channel area mask corresponding to thickness;

[0077] The zero-dimensional material film 2 is etched to A m Thickness, where 2≤m≤n

[0078] A m The optical channel area mask corresponding to the thickness, where m≤n-1;

[0079] Repeat the etching of the zero-dimensional material film 2 to A m Thickness step and pair A m The optical channel area mask step corresponding to the thickness is performed until A n The zero-dimensional material film 2 at the optical channel region corresponding to the thickness is etched to A n thickness.

[0080] It can be understood that the target thickness of the zero-dimensional material to be deposited at each optical channel region can be determined according to the central wavelength of the optical channel corresponding to each optical channel region, and the target thickness of the zero-dimensional material to be deposited at each optical channel region is arranged in order from large to small. 1 , A 2 , A 3 ......A n .

[0081] When etching the zero-dimensional material film 2, A 1 The thickness, that is, the optical channel area corresponding to the maximum thickness is masked, and then the zero-dimensional material film 2 is etched to A 2 Thickness, the target thickness is A 2 The etching of the zero-dimensional material film 2 in the optical channel region has been completed, that is, the target thickness is A 2 The construction of the filter unit in the optical channel area has been completed. 2 Mask the optical channel area corresponding to the thickness to avoid subsequent etching on A 2 The optical channel area corresponding to the thickness is affected. And so on, complete A in sequence 2 To A m Construction of the filter unit at the optical channel area of ​​thickness.

[0082] It is understandable that after completing A m After etching the zero-dimensional material film 2 at the optical channel region corresponding to the thickness, there is no need to m The optical channel area corresponding to the thickness is masked.

[0083] It is understandable that in the 1 Before masking the optical channel area corresponding to the thickness, determine A 1Is the thickness of the zero-dimensional material film 2 at the optical channel region corresponding to the thickness equal to A? 1 , if A 1 The thickness of the zero-dimensional material film 2 at the optical channel region corresponding to the thickness is greater than A 1 , then first etch the zero-dimensional material film 2 to A 1 Thickness, if A 1 The thickness of the zero-dimensional material film 2 at the optical channel region corresponding to the thickness is equal to A 1 , then directly to A 1 The optical channel area corresponding to the thickness is masked.

[0084] In one embodiment of the present application, a zero-dimensional material film 2 is deposited on the surface of a substrate 1, comprising:

[0085] obtaining a target thickness of the zero-dimensional material at a plurality of optical channel regions;

[0086] Determine a maximum value of target thicknesses of the zero-dimensional material at a plurality of optical channel regions as A;

[0087] A zero-dimensional material film 2 with a thickness of A is deposited on the surface of the substrate 1.

[0088] It can be understood that the target thickness of the zero-dimensional material required in each optical channel region is first obtained, the maximum thickness A is determined from the target thicknesses of all optical channel regions, and then a zero-dimensional material film 2 with a thickness of A is plated on the surface of the substrate 1. At this time, the thickness of the zero-dimensional material film 2 on the substrate 1 is the same as the target thickness of the optical channel region with the largest target thickness, indicating that the construction of the filter unit has been completed in the optical channel region with a target thickness of A, and there is no need to etch the optical channel region with a target thickness of A, which simplifies the process flow and improves production efficiency.

[0089] In one embodiment of the present application, etching the zero-dimensional material film 2 includes:

[0090] Mask the optical channel area with target thickness A;

[0091] The zero-dimensional material film 2 at the optical channel region where the target thickness is less than A is etched.

[0092] It can be understood that, since the thickness of the zero-dimensional material film 2 plated on the substrate 1 is A, there is no need to etch the optical channel region with a target thickness of A, and the optical channel region with a target thickness of A is directly masked to avoid the subsequent etching operation from affecting it. Then, the zero-dimensional material film 2 at the optical channel region with a target thickness less than A is etched, reducing the step of etching the optical channel region with a target thickness of A.

[0093] According to an embodiment of the third aspect of the present application, Figure 4 The zero-dimensional material filter structure forms a plurality of optical channels, and the zero-dimensional material filter structure includes:

[0094] A substrate 1, wherein a plurality of optical channel regions are provided on the surface of the substrate 1, and the plurality of optical channel regions correspond to the plurality of optical channels one by one;

[0095] A filter structure is provided at each optical channel region. The thicknesses of the multiple filter structures are different, and the thickness range of the filter structures is between 0.1 nm and 100 nm.

[0096] Specifically, the filtering structure is composed of a zero-dimensional material film, that is, a zero-dimensional material film 2 is provided in each optical channel area, and the thickness of the zero-dimensional material film 2 in multiple optical channel areas is different. The thickness of the zero-dimensional material film 2 is between 0.1nm and 100nm. The zero-dimensional material film 2 is an element single substance film or an element compound film or a mixture film.

[0097] According to the zero-dimensional material filter structure of the present application, a zero-dimensional material film 2 is provided at the optical channel region of the substrate 1, and a filter unit is constructed at the optical channel region using the zero-dimensional material film 2, and the thickness of the zero-dimensional material film 2 at multiple optical channel regions is different, and the center wavelengths of the optical channels of the filter units formed by the zero-dimensional material films 2 of different thicknesses are also different, that is, different filter units are constructed using the zero-dimensional material film 2 at multiple optical channel regions, so that the zero-dimensional material filter structure has multiple channels. The present application provides a zero-dimensional material film 2 on the surface of the substrate 1, and constructs a filter structure using the zero-dimensional material film 2. Compared with the use of a dielectric film to construct a filter structure in the related art, since the thickness of a single layer of elemental simple substance and / or elemental compound will be smaller than the dielectric film, while ensuring that the thickness of the zero-dimensional material film 2 at multiple optical channel regions is different, the overall thickness of the filter structure can be effectively reduced, so that the thickness of the zero-dimensional material filter structure will be smaller than the thickness of the filter structure in the related art.

[0098] It is understood that the mixture film includes at least one element and / or at least one element compound.

[0099] In one embodiment of the present application, the zero-dimensional material film 2 is disposed in the optical channel region by deposition or plating.

[0100] It can be understood that the element single substance and / or element compound is disposed in the optical channel region by deposition or plating to form the zero-dimensional material film 2, and the thickness of the zero-dimensional material film 2 in different optical channel regions can be made different by controlling the number of deposition or plating in different optical channel regions. And compared with the dielectric film filter structure in the related art, the present application simplifies the processing process of the filter structure and improves the production efficiency by disposing the element single substance and / or element compound in the optical channel region by deposition or plating.

[0101] In one embodiment of the present application, Figure 5 The zero-dimensional material filter structure includes an R channel, a G channel and a B channel, and the thicknesses of the zero-dimensional material film 2 at the optical channel regions corresponding to the R channel, the G channel and the B channel are all different.

[0102] It can be understood that by constructing the filter units corresponding to the R channel, the G channel and the B channel using the zero-dimensional material film 2, the thickness of the filter units corresponding to the R channel, the G channel and the B channel can be effectively reduced.

[0103] It can be understood that the zero-dimensional material filter structure includes at least two G channels, and the thickness of the zero-dimensional material film 2 at the optical channel regions corresponding to the two G channels is the same.

[0104] It can be understood that by using the zero-dimensional material filter structure of this embodiment to form a display device, the thickness of the filter structure of the display device can be effectively reduced.

[0105] In one embodiment of the present application, the thickness of the zero-dimensional material film 2 in each optical channel region is different.

[0106] It can be understood that the thickness of the zero-dimensional material film 2 at each optical channel area is set to be different, so that the number of optical channels of the zero-dimensional material filtering structure is the same as the number of optical channel areas, ensuring the number of optical channels of the zero-dimensional material filtering structure.

[0107] In one embodiment of the present application, multiple optical channel regions are distributed in sequence along the thickness of the zero-dimensional material film 2 from large to small.

[0108] It can be understood that when a zero-dimensional material film 2 is formed in multiple optical channel areas, since the thicknesses of the zero-dimensional material films 2 corresponding to the multiple optical channel areas are distributed in sequence from large to small, the zero-dimensional material films 2 can be arranged in sequence for the multiple optical channel areas in order of thickness, which is beneficial to the processing of the optical channel areas and improves production efficiency.

[0109] In one embodiment of the present application, the surface of the substrate 1 is provided with at least two rows and at least two columns of optical channel areas.

[0110] It can be understood that two or more rows of optical channel areas are provided on the surface of the substrate 1, and two or more columns of optical channel areas are provided, so that the surface of the substrate 1 is provided with at least four optical channel areas distributed in an array, and a zero-dimensional material film 2 of corresponding thickness can be provided at each optical channel area to form a corresponding filtering unit, so that the zero-dimensional material filtering structure is a multi-channel filtering structure.

[0111] In one embodiment of the present application, the thickness of the zero-dimensional material film 2 is 2 nm-15 nm.

[0112] It can be understood that the thickness of the zero-dimensional material film 2 is between 2nm and 15nm. The thickness of the zero-dimensional material film 2 in the area that does not pass through the optical channel may be different, but the overall thickness of the entire zero-dimensional material film 2 on the substrate 1 is between 2nm and 15nm. Compared with the filtering structure formed by stacking dielectric films in the related art, the thickness of the filtering structure of the present application is only about one thousandth of its thickness.

[0113] In one embodiment of the present application, the zero-dimensional material film 2 at multiple optical channel regions is integrally formed.

[0114] It can be understood that the zero-dimensional material films 2 at different optical channel regions are integrally formed, which improves the overall stability of the filter structure.

[0115] In one embodiment of the present application, the element is, for example, one of gold, silver and copper.

[0116] In one embodiment of the present application, the thickness of the zero-dimensional material film 2 in the same optical channel region is the same.

[0117] It can be understood that the zero-dimensional material films 2 in the same optical channel region together constitute a filter unit, and setting the thickness of the zero-dimensional material films 2 in the same optical channel region to be the same ensures the stability of the optical performance of the filter unit.

[0118] According to an embodiment of the fourth aspect of the present application, the spectral chip includes the above-mentioned zero-dimensional material filtering structure.

[0119] According to the spectral chip of the present application, a zero-dimensional material film 2 is provided at the optical channel region of the substrate 1, and a filter unit is constructed at the optical channel region using the zero-dimensional material film 2, and the thickness of the zero-dimensional material film 2 at multiple optical channel regions is different, and the center wavelengths of the optical channels of the filter units formed by the zero-dimensional material films 2 of different thicknesses are also different, that is, different filter units are constructed using the zero-dimensional material film 2 at multiple optical channel regions, so that the zero-dimensional material filter structure has multiple channels. The present application provides a zero-dimensional material film 2 on the surface of the substrate 1, and constructs a filter structure using the zero-dimensional material film 2. Compared with the use of a dielectric film to construct a filter structure in the related art, since the thickness of a single layer of elemental simple substance and / or elemental compound will be smaller than the dielectric film, while ensuring that the thickness of the zero-dimensional material film 2 at multiple optical channel regions is different, the overall thickness of the filter structure can be effectively reduced, so that the thickness of the zero-dimensional material filter structure will be smaller than the thickness of the filter structure in the related art.

[0120] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A zero-dimensional material filter structure, forming a plurality of optical channels, characterized in that: include: A substrate, wherein a plurality of optical channel regions are provided on the surface of the substrate, and the plurality of optical channel regions correspond one to one to the plurality of optical channels; A zero-dimensional material film is provided at each optical channel region, and the thickness of the zero-dimensional material film at multiple optical channel regions is different. The thickness of the zero-dimensional material film is between 0.1nm and 100nm. The zero-dimensional material film is an element single substance film, an element compound film, or a mixture film.

2. The zero-dimensional material filter structure according to claim 1, characterized in that: The zero-dimensional material film is disposed in the optical channel region by deposition or plating.

3. The zero-dimensional material filter structure according to claim 1, characterized in that: The zero-dimensional material filter structure comprises an R channel, a G channel and a B channel, and the thicknesses of the zero-dimensional material films at the optical channel regions corresponding to the R channel, the G channel and the B channel are all different.

4. The zero-dimensional material filter structure according to claim 1, characterized in that: The thickness of the zero-dimensional material film in each optical channel region is different.

5. The zero-dimensional material filter structure according to any one of claims 1 to 4, characterized in that: The plurality of optical channel regions are distributed in sequence along the thickness of the zero-dimensional material film from large to small.

6. The zero-dimensional material filter structure according to claim 5, characterized in that: The surface of the substrate is provided with at least two rows and at least two columns of the optical channel areas.

7. The zero-dimensional material filter structure according to any one of claims 1 to 4, characterized in that: The thickness of the zero-dimensional material film is 2nm-15nm.

8. The zero-dimensional material filter structure according to any one of claims 1 to 4, characterized in that: The zero-dimensional material films at a plurality of the optical channel regions are integrally formed.

9. The zero-dimensional material filter structure according to any one of claims 1 to 4, characterized in that: The thickness of the zero-dimensional material film in the same optical channel region is the same.

10. A spectral chip, characterized in that: It comprises the zero-dimensional material filtering structure as described in any one of claims 1 to 9.

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