Gasifier

Abstract

The utility model relates to a gasifier. A gasifier (A) is provided with a liquid starting material introduction port (11), a gasified starting material discharge port (21), a gasifier main body (1), and a heater (5). A vaporizing part (3) extending from a liquid raw material inlet (11) to a vaporized raw material outlet (21) is built in the vaporizer main body (1). A flow path (7) into which the liquid raw material (L) flows is formed in the gasification unit (3). The flow path (7) is formed such that the flow path area (S) thereof increases from the liquid raw material introduction port (11) toward the vaporized raw material discharge port (21), the flow path (7) branches midway in the vaporizing unit (3), a branching body (8) surrounded by the branched flow path (7) is formed at the branching portion, the branching body (8) is formed of a polygon, and the flow path area (S) of the flow path (7) increases from the liquid raw material introduction port (11) toward the vaporized raw material discharge port (21). One corner of a polygon is provided at a diversion point (7k) of the flow path (7).

Description

Technical Field

[0001] The utility model relates to a vaporizer which can efficiently vaporize a liquid raw material with high viscosity and high boiling point. Background Art

[0002] In recent years, the semiconductor manufacturing process has been miniaturized and the device structure has been three-dimensionalized. In this regard, the raw materials for film formation use liquid raw materials with high viscosity and high boiling point (low vapor pressure). In such a process, the following aspects become problems.

[0003] Since the liquid raw material has high viscosity, it has poor flowability and mass flow control is extremely difficult. That is, since the liquid raw material does not flow at room temperature, it is necessary to reduce its viscosity. Therefore, it is necessary to heat the raw material tank, the piping system of the vaporizer downstream of the raw material tank, and the liquid flow controller arranged in the middle of the piping system. Moreover, such liquid raw materials have high boiling points. Moreover, if such high-boiling point liquid raw materials are not quickly vaporized, they will be thermally denatured, dimers and polymers will be generated and solidified, and the flow path of the vaporizer will be blocked. Therefore, for the vaporizer put into such a process, the performance of being able to efficiently vaporize the introduced liquid raw material is required. That is, in order to obtain a high-precision film thickness in such a semiconductor manufacturing process, a vaporizer that can quickly vaporize the liquid raw material at high temperature after controlling the flow rate of the liquid raw material with high precision is required.

[0004] Therefore, as a vaporizer capable of rapidly vaporizing a large amount of liquid raw material, a vaporizer as shown in Patent Document 1 has been proposed. The vaporizer includes: an atomizer that atomizes the liquid raw material and blows it out; a hollow outer tube made of quartz glass to which the atomizer is attached; an inner tube made of quartz glass that is accommodated in the outer tube; and a metal inner heater block that is provided inside the inner tube and has an inner heater built therein.

[0005] In this vaporizer, the narrow gap between the outer tube and the inner tube becomes a flow path, and the atomized liquid raw material flows in the flow path and is vaporized. In addition, since the outer tube and the inner tube are made of quartz glass, the flow path as the narrow gap between the two is formed to have the same width from the inlet to the outlet (in other words, the flow path area described later is the same size).

[0006] Furthermore, the liquid raw material blown from the atomizer into the atomization space at the front end of the outer tube is atomized by the carrier gas and flows into the above-mentioned flow path. While flowing in the flow path, the atomized liquid raw material is heated and vaporized from the inner and outer tubes, and the vaporized gasified raw material (gas) is taken out to the outside from the outlet at the end of the flow path.

[0007] In this vaporizer, an inner filling layer is formed between the inner circumference of the glass inner tube and the outer circumference of the metal inner heater block, and the inner filling layer is filled with graphite powder. The metal inner heater block is heated / cooled by turning the inner heater on / off, and its volume expands / contracts. Therefore, the inner filling layer absorbs the expansion / contraction and is always in close contact with the inner tube and the inner heater block, efficiently transferring the heat of the inner heater block to the inner tube. As a result, the heat of the inner heater block is quickly transferred to the atomized liquid raw material flowing in the flow path, and even if a large amount of atomized liquid raw material flows in the flow path, the large amount of atomized liquid raw material can be smoothly vaporized.

[0008] Prior Art Literature

[0009] Patent Literature

[0010] Patent Document 1: Japanese Patent No. 6769645 Utility Model Content

[0011] Issues to be solved by utility models

[0012] However, although the vaporizer described in Patent Document 1 can quickly transfer the heat of the internal heater block to the atomized liquid raw material flowing in the flow path through the inner filling layer of graphite powder as described above, the atomized liquid raw material will vaporize as it moves forward in the flow path, thereby rapidly expanding its volume in the narrow flow path.

[0013] Although the flow path is narrow, it is a cylindrical space with uniform width from the inlet to the outlet, and there are no parts that hinder the flow in the middle. Therefore, the atomized liquid raw material and the vaporized and expanded vaporized raw material (gas) will also flow smoothly in the flow path. In addition, the heat of the internal heater block is managed to be quickly transferred to the atomized liquid raw material flowing in the flow path through the above-mentioned inner filling layer. However, in the above-mentioned structure, the vaporization speed of the atomized liquid raw material is slow relative to the travel speed of the atomized liquid raw material. Therefore, in order to complete the vaporization in the flow path, the travel speed of the atomized liquid raw material in the flow path must be slowed down or the flow path must be lengthened and increased. In the former case, the vaporization amount of the atomized liquid raw material will be limited, and in the latter case, there is a problem that the shape of the device becomes larger.

[0014] The utility model is completed in order to solve the problems of such conventional vaporizers, and its subject is to provide a vaporizer which prevents the increase of the internal pressure of the flow path by smoothly discharging the vaporized raw material after rapid expansion, and can process a larger amount of liquid raw material than before without increasing the shape of the device.

[0015] Means for solving problems

[0016] The scheme recorded in technical solution 1 is a vaporizer A, which includes: a liquid raw material inlet 11; a vaporized raw material outlet 21; a vaporizer body 1, wherein the vaporizer body 1 has a flow path 7 for liquid raw material L to flow into, formed in a vaporization section 3 from the liquid raw material inlet 11 to the vaporized raw material outlet 21; and a heater 5, wherein the heater 5 heats the liquid raw material L flowing in the flow path 7, and is characterized in that the flow path 7 is formed so that a flow path area S represented by a cross-sectional area of ​​the flow path 7 orthogonal to a flow direction of the liquid raw material L increases from the liquid raw material inlet 11 toward the vaporized raw material outlet 21, the flow path 7 branches in the middle of the vaporization section 3, and a branch body 8 surrounded by the branched flow path 7 is formed at the branching portion, the branch body 8 is composed of a polygon, and one corner of the polygon is provided at a branching point 7k of the flow path 7.

[0017] In the gasifier A described in the technical solution 1, the solution described in the technical solution 2 ( Figure 1 to Figure 3 ) is characterized in that the branch body 8 is hexagonal, and a plurality of the branch bodies 8 are arranged in a tortoise shell shape in multiple layers and rows (a pattern in which hexagonal branch bodies 8 on the downstream side are arranged between hexagonal branch bodies 8 on the upstream side).

[0018] The scheme recorded in technical scheme 3 is a vaporizer A, which includes: a liquid raw material inlet 11; a vaporized raw material outlet 21; a vaporizer body 1, wherein the vaporizer body 1 has a flow path 7 for liquid raw material L to flow into, formed in a vaporization section 3 from the liquid raw material inlet 11 to the vaporized raw material outlet 21; and a heater 5, wherein the heater 5 heats the liquid raw material L flowing in the flow path 7, and is characterized in that the flow path 7 is formed so that a flow path area S represented by a cross-sectional area of ​​the flow path 7 orthogonal to a flow direction of the liquid raw material L increases from the liquid raw material inlet 11 toward the vaporized raw material outlet 21, the flow path 7 branches in the middle of the vaporization section 3, and a branch body 8 surrounded by the branched flow path 7 is formed in the branch portion, and the branch body 8 is formed in a circular or elliptical shape.

[0019] In the vaporizer A according to any one of claims 1 to 3, the feature of the invention according to claim 4 is that the branch bodies 8 are provided more in number on the downstream side than on the upstream side.

[0020] In the vaporizer A described in any one of claims 1 to 4, the feature of the invention described in claim 5 is that 1 / 2 of the width W or the depth D of the flow path 7 is formed within the range of the temperature boundary layer of the liquid raw material L.

[0021] Utility Model Effect

[0022] Since the flow path 7 of the present invention is formed so that the flow path area S of the flow path 7 increases from the liquid raw material inlet 11 toward the vaporized raw material outlet 21, the vaporized raw material (gasified gas) G2 whose volume is rapidly expanded by vaporization can be quickly discharged from the flow path 7. As a result, the increase in the internal pressure of the flow path 7 can be suppressed, and the vaporization of the liquid raw material L flowing into the flow path 7 from the flow path inlet 7a and the inflow of the liquid raw material L into the flow path inlet 7a are not hindered, and a large amount of liquid raw material L can be processed compared with a conventional vaporizer of the same volume. In addition, as a secondary technical effect, the vaporizer A can be miniaturized.

[0023] As one example of increasing the flow path area S, the following case can be cited: the flow path 7 is formed to branch in the middle of the gasification section 3. If the flow path 7 is formed to branch in this way, the gasification raw material G2 that is gasified in the flow path 7 and whose volume expands rapidly can smoothly flow and be discharged in the flow path 7 that branches and increases toward the gasification raw material discharge port 21, and as a result, the increase in the internal pressure in the flow path 7 can be suppressed.

[0024] Furthermore, since a branch body 8 for diverting the flow path 7 on the upstream side is formed in the branch portion, and the branch body 8 is surrounded by the flow path 7, the heat from the heater 5 can be efficiently supplied to the fluid (liquid raw material L, vaporized raw material G2) flowing from the branch body 8 in the flow path 7.

[0025] Here, if the branch body 8 is formed of a polygon and one corner of the polygon is provided at the branching point 7 k of the flow path 7 , the fluid (liquid raw material L, vaporized raw material G2 ) can be smoothly branched.

[0026] If the polygonal branch bodies 8 are regular hexagons and are arranged in a tortoise shell shape, the direction of the flow path 7 is constantly changed from the liquid raw material inlet 11 toward the vaporized raw material outlet 21 in the entire vaporization section 3, and a flow path 7 having uniform flow path areas s1 to sn can be formed in the vaporization section 3. Thus, the smooth flow of the liquid raw material L in the flow path 7 can be ensured, the retention time can be prolonged, and the contact opportunity with the branch bodies 8 can be extended, so that the liquid raw material L can be more reliably vaporized.

[0027] Furthermore, by making 1 / 2 of the width W or the depth D of the flow path 7 within the range of the temperature boundary layer of the liquid raw material L, the temperature of the liquid raw material L flowing in the flow path 7 can be reliably raised to a temperature higher than the vaporization temperature of the liquid raw material L before reaching the flow path outlet 7b. In other words, the liquid raw material L does not remain low in temperature and is discharged from the flow path outlet 7b in a liquid state. All the liquid raw material L is reliably vaporized and flows from the flow path outlet 7b toward the vaporized raw material discharge port 21. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a longitudinal sectional view showing the internal structure of one embodiment of the present invention.

[0029] Figure 2 yes Figure 1 ZZ section view.

[0030] Figure 3 yes Figure 1 A partial enlarged top view of the flow path.

[0031] Figure 4 yes Figure 3 A partial enlarged cross-sectional view of the flow path.

[0032] Figure 5 yes Figure 3 Another partial enlarged cross-sectional view of the flow path.

[0033] Figure 6 This is a schematic flow chart of the entire system using the gasifier of the present invention.

[0034] Figure 7 It is a partial longitudinal sectional view showing the internal structure of another embodiment of the present invention.

[0035] Figure 8 It is a partial enlarged view of the second branch body of the utility model.

[0036] Fig. 9 It is a partial enlarged view of the third branch body of the utility model.

[0037] Fig.10 yes Fig. 9 A diagram showing another configuration example of a branch body.

[0038] Fig.11 It is a partial enlarged view of the fourth branch body of the utility model. DETAILED DESCRIPTION

[0039] The present invention is described below according to the accompanying drawings. The vaporizer A of the present invention is, for example, an apparatus used in a semiconductor manufacturing system, and includes: a liquid raw material inlet 11; a carrier gas inlet 12 provided as required; a vaporized raw material outlet 21; a vaporizer body 1, wherein a flow path 7 for a liquid raw material L to flow into is formed in a vaporization section 3 from the liquid raw material inlet 11 to the vaporized raw material outlet 21; and a heater 5, wherein the heater 5 heats the liquid raw material L flowing in the flow path 7.

[0040] As described above, the main performance required of the vaporizer A of the present invention is to discharge the vaporized raw material G2 whose volume is rapidly expanded by vaporization from the flow path 7 quickly and suppress the increase of the internal pressure in the flow path 7, so as to promote the vaporization of the liquid raw material L without delay. Therefore, the flow path 7 of the vaporization section 3 is basically formed so that the flow path area S represented by the cross-sectional area of ​​the flow path 7 orthogonal to the flow direction of the liquid raw material L (or, when there are multiple flow paths 7, the sum of the cross-sectional areas of the multiple flow paths 7 s1+...+sn) increases as it moves from the liquid raw material inlet 11 toward the vaporized raw material outlet 21.

[0041] Here, the meaning of “the flow area S of the flow path 7 increases as it moves from the liquid raw material inlet 11 toward the vaporized raw material outlet 21” includes: (1) the case where the flow area S of one flow path 7 is simply increased (gradually increased); (2) the case where a plurality of flow paths 7 are provided and the flow area of ​​each flow path 7 is set to s1 to sn, and the total flow area S obtained by summing the flow areas s1 to sn on the horizontal line HL perpendicular to the center line CL of the vaporization section 3 increases (gradually increases); (3) the case where the flow paths 7 branch and the number of flow paths 7 increases as it moves downstream, that is, the total flow area S increases (gradually increases) due to the increase in the number of flow paths 7.

[0042] In addition, the "range" in which the flow path area S of the flow path 7 increases from the liquid raw material inlet 11 toward the vaporized raw material outlet 21 can cover the entire length of the vaporization section 3 provided with the flow path 7, but can also be set to a range until the gas raw material G2 reaches the set temperature and no further expansion occurs.

[0043] In addition, as a method of supplying the liquid raw material L, there are a case where the liquid raw material L is atomized using the carrier gas G1 and supplied to the vaporization unit 3 , and a case where the liquid raw material L is simply supplied to the vaporization unit 3 without using the carrier gas G1 .

[0044] As the (first embodiment) of the present vaporizer A, the branch body 8 is set to an "island" shape formed by a polygon, a circle or an ellipse. And, among them, the case where the branch body 8 is a hexagon and arranged in a tortoise shell shape is set as a representative example (the first mode of the first embodiment), and the case other than this is set as (the second mode of the first embodiment and below), and will be described later. Among them, the case where the carrier gas G1 is used and the case where only the liquid raw material L is used are described.

[0045] The above-mentioned "tortoise shell pattern" refers to a pattern in which hexagons of the lower layer are arranged between the hexagons of the upper layer in a state where hexagons are arranged in multiple layers and rows in a zigzag manner. Of course, flow paths 7 are formed between the hexagonal branches 8.

[0046] Figure 7The example shown will be described lastly as (second embodiment).

[0047] And, first of all, Figures 1 to 5 The first mode of the first embodiment shown is described as a representative example, and with respect to other embodiments, portions different from the representative example are described, and the description of the representative example is cited for the same portions.

[0048] (First Mode of First Embodiment)

[0049] The vaporizer body 1 includes a plate-like substrate 2 and a plate-like cover plate 10, and the cover plate 10 is fully bonded to one side (covering surface 2a) of the substrate 2 (for example, diffusion bonding). The substrate 2 and the cover plate 10 are made of corrosion-resistant metal such as stainless steel. The above-mentioned diffusion bonding is a method of bonding the cover plate 10 and the substrate 2, which are metal plates, by heating them to a high temperature under vacuum and applying a load under high pressure. The bonding surfaces are completely airtightly bonded. The vaporizer body 1 has a plate-like appearance.

[0050] Grooves (grooves) constituting the flow path 7, the introduction space 4a and the discharge space 4b described later are engraved on the cover surface 2a of the substrate 2 covered by the cover plate 10. The portion where the flow path 7 is formed is the vaporization section 3. The flow path 7, the introduction space 4a and the discharge space 4b are covered airtightly by the cover plate 10.

[0051] The shape of the vaporization section 3 when viewed from above is an isosceles triangle, and the vaporization section start 3a is set at the top of the vaporization section 3. In the figure, the introduction space 4a is set at a position higher than the vaporization section start 3a and extends in the up-down direction. The vaporization section start 3a is connected to the lower end of the introduction space 4a. A liquid raw material introduction port 11 is set in the introduction space 4a. In this embodiment, a carrier gas introduction port 12 is further set on the side of the vaporization section start 3a, and a spray function based on the carrier gas G1 can be ensured in the introduction space 4a. The above-mentioned liquid raw material introduction port 11 and the carrier gas introduction port 12 are penetrated in the upper end portion of the back side of the substrate 2.

[0052] When the carrier gas inlet 12 is provided and the carrier gas G1 is used, there is an advantage that the liquid raw material L can be introduced and the gas raw material G2 can be discharged quickly. (On the contrary, when only the liquid raw material L is supplied without using the carrier gas G1 as described later, the carrier gas inlet 12 is not required.)

[0053] The gasification section terminal 3b is the bottom of the gasification section 3, and a plurality of flow path outlets 7b are opened, and the plurality of flow path outlets 7b are connected to the discharge space 4b. A gasification raw material discharge port 21 is provided in the discharge space 4b. The flow path area of ​​the discharge space 4b and the gasification raw material discharge port 21 is larger than the total flow path area S of the plurality of flow paths 7 opened to the discharge space 4b, and does not hinder the outflow of the gasification raw material G2 flowing out of the plurality of flow paths 7. The gasification raw material discharge port 21 is provided through the lower end portion of the back surface of the substrate 2.

[0054] Next, the fine structure of the vaporization section 3 (i.e., the size and shape of the branch body 8 and the flow path 7) can be selected appropriately according to the type of product, the purpose, and the physical properties of the liquid raw material L to be vaporized (viscosity, specific heat, heat of vaporization, molecular weight, vapor pressure, etc.). In this embodiment, the shape and configuration of the branch body 8 are regular hexagons and are arranged in a tortoise shell shape as described above. Other forms will be described in detail later. The size of the branch body 8 will be described later.

[0055] Next, the size of the flow path 7 is described. Since the flow path 7 is surrounded by the wall surface 7h and heated from the entire circumference, it is preferred that at least 1 / 2 of the width W and the depth D of the flow path 7 does not exceed the "temperature boundary layer" at which the temperature is constant from the wall surface 7h, as described later. Although it is extremely difficult to vaporize the liquid raw material L having a high boiling point and a low vapor pressure, this can improve the heat transfer to the liquid raw material L and make vaporization easier.

[0056] In addition, the above-mentioned "temperature boundary layer" refers to the range in which the liquid raw material L flowing at a position away from the wall surface 7h becomes a uniform flow temperature. That is, if the temperature of the wall surface 7h of the substrate 2 or the cover plate 10 facing the flow path 7 is set as the wall surface temperature, the temperature of the fluid flowing in the flow path 7 gradually decreases as it moves away from the above-mentioned wall surface 7h, but it becomes a constant temperature (uniform flow temperature) at a certain temperature. In this case, since the entire circumference of the flow path 7 is surrounded by the wall surface 7h, if the range from the wall surface 7h to the center of the flow path 7 is set to be less than the range of the "temperature boundary layer", all the liquid raw materials L flowing in the flow path 7 are heated to the vaporization temperature and will not pass through the flow path 7 while maintaining the liquid state.

[0057] That is, if the wall surface temperature is set so that the temperature of the “temperature boundary layer” becomes a temperature exceeding the vaporization temperature, the liquid raw material L flowing in the flow path 7 is completely vaporized.

[0058] The flow paths 7 are formed to branch in the middle of the vaporization section 3, and the number of the flow paths 7 increases from the vaporization section start end 3a toward the vaporization section terminal end 3b. By increasing the number of the flow paths 7, the flow path area S increases.

[0059] It is preferred that the flow path area S be increased over the entire length of the gasification section 3, but as long as the discharge of the gasified raw material G2 whose volume increases rapidly due to gasification is not hindered, the flow path area S need not be increased over the entire length of the gasification section 3. Although not shown in the figure, the flow path 7 may be extended straightly toward the flow path outlet 7b without branching near the gasification section terminal 3b where the temperature of the gasified raw material G2 flowing in the gasification section 3 approaches the set temperature and the volume expansion thereof stops, and the increase of the flow path area S may be stopped at this portion.

[0060] The flow path area S is the cross-sectional area of ​​the flow path 7 perpendicular to the flow direction of the liquid raw material L (the sum of the cross-sectional areas when there are a plurality of flow paths 7 ).

[0061] like Figure 1 As shown, the flow path area S of the above-mentioned flow path 7 at a certain location is the cross-sectional area of ​​the flow path 7 at right angles to the flow direction of the liquid raw material L (gaseous raw material G2) from the starting end 3a of the vaporization section toward the terminal end 3b of the vaporization section on the horizontal line HL that is perpendicular to the center line CL of the vaporizer main body 1 from the starting end 3a of the vaporization section toward the terminal end 3b of the vaporization section. When there are n lines, it is the sum of the cross-sectional areas (s1~sn) of the flow paths 7 (S=s1+...+sn).

[0062] The planar shape of the vaporizer 3 (in a top view after the cover plate 10 is removed) is, for example, a triangle (an isosceles triangle in the figure) whose width increases from the vaporizer start end 3a toward the vaporizer end 3b. In addition, an inlet space 4a is provided at the top of the vaporizer 3, which is connected to the vaporizer start end 3a and extends upward from the vaporizer start end 3a. A flow path 7 is formed in the vaporizer 3 from the inlet space 4a at the top to the bottom, and a discharge space 4b is provided at the bottom where the flow path outlet 7b of the flow path 7 opens.

[0063] The flow path 7 provided in the vaporization section 3 has only one flow path inlet 7a at the vaporization section start end 3a and branches from the vaporization section start end 3a toward the vaporization section terminal 3b. As described above, at the vaporization section terminal 3b, the flow path outlets 7b of the plurality of flow paths 7 open to the discharge space 4b.

[0064] The flow paths 7 that are branched on the upstream side and adjacent to each other merge on the downstream side and are connected to each other. The portion surrounded by the flow paths 7 is a branch body 8. In other words, the flow paths 7 are branched by the branch body 8 provided in the vaporization section 3. The branch bodies 8 are provided so that the number of the branch bodies 8 increases from the vaporization section start end 3a toward the vaporization section terminal 3b, thereby, as described above, a plurality of flow paths 7 open at the vaporization section terminal 3b.

[0065] As described at the beginning, the branch bodies 8 of this embodiment are hexagonal in plan view (a regular hexagon in the case of the figure) and are arranged at uniform intervals in a tortoise shell shape. Therefore, the flow path 7 formed between the branch bodies 8 and the flow path 7 formed between the branch bodies 8 on the outside and the side wall of the substrate 2 maintain the same width W and depth D from the vaporization section start end 3a to the vaporization section terminal end 3b.

[0066] like Figure 4 As shown, the cross section of the flow path 7 is composed of a groove having a rectangular cross section. Figure 5 As another example, the channel 7 is formed by a groove having a semicircular cross section or a bottom angle formed in an arc shape. As described above, the depth of the channel 7 is represented by D, and the width is represented by W. Figure 4 D:W=1:1 is used for drawing. Figure 5 D:W=1:2 is used for depiction. Of course, these are examples and are not limited thereto. The depth D and width W of the flow path 7 or one of them is very small, and the temperature of the liquid raw material L flowing in the flow path 7 at a distance from the wall surface 7h is formed within the range of its "temperature boundary layer". It is desirable to set the depth D of the flow path 7 to 0.5mm±0.25mm. The width W is not particularly limited, but is preferably set to 0.5mm to 1mm.

[0067] In addition, the grooves constituting the flow path 7, the introduction space 4a, and the discharge space 4b are produced by machining or chemical etching (etching).

[0068] The purpose of the branch body 8 is to smoothly transfer the heat from the heater 5 from the substrate 2 and the cover plate 10 to the liquid raw material L flowing in the flow path 7. Therefore, any shape that does not hinder the transfer can be used. Therefore, the planar shape of the branch body 8 is not particularly limited, and polygons (triangles, quadrilaterals, pentagons, hexagons, heptagons, octagons or polygons larger than octagons), circles or ellipses, etc. can be listed. Among them, from the perspective of making the flow of the fluid (liquid raw material L, gas raw material (gas) G2) smooth, it is most preferred to configure the hexagon (a regular hexagon in the figure) in a tortoise shell shape, and this situation is adopted as the present embodiment. As for the size of the branch body 8, considering the above situation, it is appropriate for the width 8w (and height 8h) of the branch body 8 to be in the range of 10mm±5mm.

[0069] If the number of the branches 8 increases from the vaporization section start end 3a toward the vaporization section terminal 3b, the arrangement structure of the branches 8 is not particularly limited, but it is preferred that the downstream branch 8 (especially the corner thereof) is arranged just below the upstream flow path 7 so that the flow of the upstream flow path 7 sandwiched by the upstream branch 8 is evenly divided to the left and right. In this embodiment, as an example, an example of arranging the branches 8 in a tortoise shell shape is adopted.

[0070] In order to facilitate the flow branching of the upstream flow path 7 and prevent stagnation in the flow of the fluid (liquid raw material L or vaporized raw material G2), one corner of the hexagonal branch body 8 is arranged directly below the upstream flow path 7. Of course, the same is true for other polygonal shapes.

[0071] exist Figure 2 In the embodiment, the upper and lower rod-shaped heaters 5 are horizontally inserted into the substrate 2. Of course, although not shown in the figure, it can also be vertical. It is also possible to attach a planar heater (not shown) to the substrate 2 and the cover plate 10 instead of the rod-shaped heater 5.

[0072] A temperature sensor 6 is provided near the rod-shaped heater 5 .

[0073] Figure 6 This is an example of the device structure of a semiconductor manufacturing device using the vaporizer A of the utility model, including a raw material tank T, a liquid flow controller E, a mass flow controller P (set when using a carrier gas G1), the vaporizer A of the utility model, a reactor R and a piping system connecting them.

[0074] The liquid raw material L is stored in the raw material tank T, and the liquid raw material L is sent to the liquid flow controller E by the pressurized gas G0.

[0075] The liquid flow controller E is connected to the raw material tank T, and delivers the liquid raw material L supplied from the raw material tank T to the liquid raw material introduction port 11 of the vaporizer A at a constant mass flow rate.

[0076] The mass flow controller P is connected to a carrier gas supply source, and delivers the carrier gas G1 to the carrier gas introduction port 12 of the vaporizer A at a mass flow rate.

[0077] The liquid raw material inlet 11 of the vaporizer A is connected to a liquid flow controller E via a liquid raw material supply pipe, and the carrier gas inlet 12 is connected to a mass flow controller P via a carrier gas supply pipe. Furthermore, the vaporized raw material outlet 21 is connected to a reactor R for oxidizing a silicon substrate via a vaporized raw material supply pipe.

[0078] The raw material tank T, the liquid flow controller E, the vaporizer A, the liquid raw material supply pipe from the raw material tank T to the vaporizer A via the liquid flow controller E, and the vaporized raw material supply pipe are kept warm.

[0079] Furthermore, since the outer shape of the vaporizer A is a flat plate, even if it is directly installed in the reaction furnace R, the volume will not increase.

[0080] Next, the operation of the vaporizer A of the present invention will be described. When the heater 5 of the vaporizer A is powered on and heated, the heat is transferred to the periphery of the flow path 7 through the substrate 2 and the cover plate 10 .

[0081] In this state, the pressurized gas G0 is supplied to the raw material tank T, and as described above, the liquid raw material L is supplied at a constant mass flow rate from the liquid flow controller E to the liquid raw material inlet 11 of the vaporizer A. On the other hand, similarly, the carrier gas G1 is blown from the mass flow controller P to the carrier gas inlet 12 at a mass flow rate, and the atomized liquid raw material L is blown into the vaporizer 3 from the outlet of the introduction space 4a, that is, the vaporization section starting end 3a.

[0082] The atomized liquid raw material L blown into the vaporization section 3 collides with the first row of branch bodies 8 located at the starting end 3a of the vaporization section. In the present embodiment, since the branch body 8 is hexagonal and one corner thereof faces the introduction space 4a side, the blown atomized liquid raw material L is evenly divided to the left and right through the corner. The atomized liquid raw material L branched to the left and right flows along the flow path 7 formed around the initial branch body 8.

[0083] The split atomized liquid raw material L flows in the flow path 7 formed between the branch body 8 of the first column and the inner wall of the vaporization part 3, and reaches the second column. In the second column, half of the split atomized liquid raw material L flows in the flow path 7 between the branch body 8 of the second column and the initial branch body 8, and merges at the end portion of the branch body 8 of the first column, flows directly in the flow path 7 between the branch bodies 8 of the second column, and branches again at the upper end corner of the branch body 8 of the third column.

[0084] The remaining atomized liquid raw material L that flows to the outside in the second column flows along the inner wall of the vaporization section 3. Hereinafter, the above-mentioned operation is repeated, and the flow division and merging are repeated successively.

[0085] The split atomized liquid raw material L is rapidly heated by contact with the wall surface 7h of the flow path 7 or by the heat from the wall surface 7h and is vaporized in sequence during the flow. If the size (width W or depth D) of the flow path 7 is within the range of the "temperature boundary layer" (maximum range not exceeding twice the "temperature boundary layer"), the entire interior of the flow path 7 is maintained above the vaporization temperature and all the atomized liquid raw materials L are vaporized during the flow, and the short-circuiting phenomenon that keeps the liquid fine particles passing through the interior of the flow path 7 and reaching the flow path outlet 7b disappears.

[0086] Furthermore, although the volume of the atomized liquid raw material L expands rapidly as it is successively vaporized during the flow, the flow path 7 is connected like a mesh toward the vaporization section terminal 3b, and the flow path area S increases rapidly. Therefore, the vaporized raw material G2 flows while being divided in the flow path 7, and the internal pressure in the flow path 7 is not increased. Therefore, since the internal pressure in the flow path 7 is not increased, the liquid raw material L smoothly flows into the vaporization section 3 and is vaporized.

[0087] Furthermore, since the flow path 7 changes direction at short intervals as described above and is agitated, the contact opportunity between the fluid (atomized liquid raw material L, vaporized raw material G2) and the wall surface 7h increases dramatically, leading to a rapid temperature rise.

[0088] The gasified raw material G2 flows into the discharge space 4b from the flow path outlet 7b, and is supplied to the reaction furnace R through the gasified raw material discharge port 21 formed in this portion without increasing the internal pressure of the equipment.

[0089] The above case is a case where the carrier gas G1 is used. Next, a case where the carrier gas G1 is not used will be described.

[0090] When the carrier gas G1 is not used, the liquid raw material L directly drips or flows down and collides with the first row of branch bodies 8, and is similarly divided to the left and right. The flow of the liquid raw material L is the same as above, but in this case, it flows around the flow path 7 around the branch bodies 8 in the central part arranged along the center line CL.

[0091] Then, the gasified raw material G2 vaporized in this flow is diffused to the flow paths 7 on both sides, and flows out from the flow path outlet 7b to the discharge space 4b in a uniform state.

[0092] (Second Mode of First Embodiment)

[0093] This is a case other than the case where the branch body 8 is a hexagon. When the branch body 8 is a circle, the circular branch body 8 on the downstream side is arranged so as to be located directly below the flow path 7 formed between the circular branch bodies 8 on the upstream side, as in the tortoise shell pattern ( Figure 8 ). In the figure, the first column is two branch bodies 8, and there is a flow path 7 of the first column between the two branch bodies 8. (Although not shown, a single branch body 8 may be provided in the first column.)

[0094] Thus, similarly to the above, the atomized liquid raw material L blown into the vaporization section 3 together with the carrier gas G1 is branched by the circular branch body 8 and flows downstream, during which it is vaporized. In this case, the size of the flow path 7 formed between the circular branch bodies 8 is not constant, and the interval is expanded in the diversion part compared to the part close to the circular branch body 8, and the flow rate decreases, forming a fine vortex. When a fine turbulence is generated in this part, the flow rate decreases, and the contact opportunity between the wall surface 7h and the raw material (liquid raw material L, vaporized raw material G2) increases, which will cause a rapid temperature rise.

[0095] (Third Mode of First Embodiment)

[0096] In this case, the branch body 8 is a triangle (an equilateral triangle in the figure). Fig. 9In the embodiment, the branch bodies 8 with their apexes facing upward and the branch bodies 8 with their apexes facing downward are arranged alternately, and the number of the branch bodies 8 increases toward the downstream, and the branch bodies 8 are arranged in a plurality of rows.

[0097] In contrast, Fig.10 This is an example in which the lateral rows are offset in the horizontal direction by half the width of the base of the triangle.

[0098] The flow paths 7 are formed to have the same width W and the same depth D throughout the entire vaporization section 3 .

[0099] (Fourth Mode of First Embodiment)

[0100] In this case, the branch body 8 is a quadrilateral (a square in the figure). Fig.11 This is an example in which one corner of the branch body 8 is arranged toward the inflow side, and the number of the branch bodies 8 increases toward the downstream and the branch bodies 8 are arranged in a plurality of rows.

[0101] In this case, the flow path 7 is also formed to have the same width W and the same depth D throughout the entire vaporization section 3 .

[0102] (Second Embodiment)

[0103] This case is an example in which one (not shown) to a plurality of flow paths 7 are provided from the vaporization section start end 3a toward the vaporization section terminal end 3b. The flow path 7 is formed so that the flow path area S of the flow path 7 increases from the liquid raw material inlet 11 toward the vaporized raw material outlet 21. In the case of the figure, the depth D of the flow path 7 is formed within the range of the "temperature boundary layer" (up to a range of not more than twice), and the width W is formed so as to increase.

[0104] The increase in the flow path area S of the flow path 7 is performed over the entire length of the flow path 7 as described above, or the increase in the flow path area S of the flow path 7 is performed on the upstream side where the vaporization of the liquid raw material L is completed.

[0105] Since the flow path 7 in the figure is formed in a straight line, the wall surface 7h can be provided with projections and depressions as shown in the enlarged view. As a result, the contact area of ​​the wall surface 7h of the flow path 7 is increased, and the flow velocity of the liquid raw material L flowing on the wall surface 7h is slowed down, which leads to a rapid increase in the temperature of the liquid raw material L.

[0106] When there are a plurality of flow paths 7, it is preferable to provide a bypass 7p connecting adjacent flow paths 7. The liquid raw material L and the vaporized raw material G2 are exchanged between adjacent flow paths 7 through the bypass 7p, so that the internal pressure in the vaporization section 3 is averaged.

[0107] Although not shown in the drawings, the flow path 7 may be made to meander.

[0108] As described above, the vaporizer A of the present invention is structured such that the flow path area S (the number of flow paths 7) of the flow path 7 increases as it advances downstream. Therefore, even if the volume of the liquid raw material L increases as it is vaporized, the increase in the internal pressure of the flow path 7 can be suppressed, and the liquid raw material L can be efficiently vaporized. As a result, the size of the vaporizer A can be miniaturized, and it becomes easy to mount it on the reactor R (film forming device). In addition, the structure of the vaporizer A is extremely simple, and combined with miniaturization, it can also reduce costs.

[0109] Description of Reference Numerals

[0110] A: vaporizer, CL: center line, D: depth of flow path, E: liquid flow controller, G0: pressurized gas, G1: carrier gas, G2: vaporized raw material (gas), HL: horizontal line, L: liquid raw material, P: mass flow controller, R: reaction furnace, S (s1 to sn): flow path area, T: raw material tank, W: width of flow path, 1: vaporizer body, 2: substrate, 2a: covering surface, 3: vaporization section, 3a: vaporization section start end, 3b: vaporization section end end, 4a: introduction space, 4b: discharge space, 5: heater, 6: temperature sensor, 7: flow path, 7a: flow path inlet, 7b: flow path outlet, 7h: wall surface, 7k: branch point, 7p: bypass, 8: branch body, 8h: height of branch body, 8w: width of branch body, 10: cover plate, 11: liquid raw material introduction port, 12: carrier gas introduction port, 21: vaporized raw material discharge port.

Claims

1. A vaporizer (A), comprising: a liquid raw material inlet (11); a vaporized raw material outlet (21); a vaporizer body (1), wherein a flow path (7) for the liquid raw material (L) to flow in is formed in a vaporization section (3) from the liquid raw material inlet (11) to the vaporized raw material outlet (21); and a heater (5), wherein the heater (5) heats the liquid raw material (L) flowing in the flow path (7), wherein: The flow path (7) is formed so that a flow path area (S) represented by a cross-sectional area of ​​the flow path (7) orthogonal to a flow direction of the liquid raw material (L) increases from a liquid raw material inlet port (11) toward a vaporized raw material outlet port (21), The flow path (7) branches in the middle of the vaporization section (3), and a branch body (8) surrounded by the branched flow path (7) is formed at the branching portion. The branch body (8) is composed of a polygon, and one corner of the polygon is provided at the branching point (7k) of the flow path (7).

2. The gasifier according to claim 1, characterized in that: The branch bodies (8) are hexagonal, and a plurality of the branch bodies (8) are arranged in multiple layers and rows in such a manner that the hexagonal branch bodies (8) on the downstream side are arranged between the hexagonal branch bodies (8) on the upstream side.

3. The gasifier according to claim 1 or 2, characterized in that: Compared with the upstream side, the branch bodies (8) are arranged in greater numbers on the downstream side.

4. The gasifier according to claim 1 or 2, characterized in that: 1 / 2 of the width (W) or depth (D) of the flow path (7) is formed within the range of the temperature boundary layer of the liquid raw material (L).

5. The gasifier according to claim 3, characterized in that: 1 / 2 of the width (W) or depth (D) of the flow path (7) is formed within the range of the temperature boundary layer of the liquid raw material (L).

6. A vaporizer (A), comprising: a liquid raw material inlet (11); a vaporized raw material outlet (21); a vaporizer body (1), wherein a flow path (7) for the liquid raw material (L) to flow in is formed in a vaporization section (3) extending from the liquid raw material inlet (11) to the vaporized raw material outlet (21); and a heater (5), wherein the heater (5) heats the liquid raw material (L) flowing in the flow path (7), characterized in that: In the vaporizer (A), the flow path (7) is formed so that a flow path area (S) represented by a cross-sectional area of ​​the flow path (7) orthogonal to a flow direction of the liquid raw material (L) increases from a liquid raw material inlet (11) toward a vaporized raw material outlet (21), The flow path (7) branches in the middle of the vaporization section (3), and a branch body (8) surrounded by the branched flow path (7) is formed at the branching portion. The branch body (8) is formed into a circular or elliptical shape.

7. The gasifier according to claim 6, characterized in that Compared with the upstream side, the branch bodies (8) are arranged in greater numbers on the downstream side.

8. The gasifier according to claim 6, characterized in that 1 / 2 of the width (W) or depth (D) of the flow path (7) is formed within the range of the temperature boundary layer of the liquid raw material (L).

9. The gasifier according to claim 7, characterized in that: 1 / 2 of the width (W) or depth (D) of the flow path (7) is formed within the range of the temperature boundary layer of the liquid raw material (L).

Images