Upper half-moon thermal field structure of horizontal silicon carbide epitaxial furnace

Abstract

The utility model relates to an upper half-moon thermal field structure of a horizontal silicon carbide epitaxial furnace, which structurally comprises an upper half-moon thermal field, a chamber where a substrate is located and a lower half-moon thermal field which are sequentially arranged from top to bottom, a partition plate is arranged above the bottom in the upper half-moon thermal field corresponding to the air hole in parallel; and the end part of a guide pipe for inputting argon flow is communicated with the side wall of the upper half-moon thermal field between the air hole and the partition plate. When entering the space between the air hole and the partition plate through the guide pipe, horizontal argon flow flows to the cavity where the substrate is located through the air hole to form a compact air curtain, so that a source gas layer participating in reaction flows downwards, deposition on the lower end face of a thermal field of the upper half moon is reduced, and the partition plate can effectively offset temperature change caused by the air hole; and the temperature distribution of the upper half-moon thermal field and the lower half-moon thermal field is relatively uniform. The maintenance period of the horizontal furnace can be effectively prolonged, and the productivity of the horizontal furnace is improved.

Description

Technical Field

[0001] The utility model relates to an upper half-moon thermal field structure of a horizontal silicon carbide epitaxial furnace, belonging to the technical field of silicon carbide epitaxial furnaces. Background Art

[0002] In the existing technology, during horizontal silicon carbide epitaxial growth, because the distance between the upper and lower half-moons is only 20mm, 3C silicon carbide is very easy to grow on the lower end surface of the upper half-moon. After reaching a certain thickness, the outermost layer of deposits becomes granular and easily falls off. Therefore, the defects of the epitaxial layer mainly come from the shedding of deposits on the thermal field of the upper half-moon of the substrate, resulting in a maintenance cycle of 5000um for the mainstream horizontal furnace, which is also one of the most critical factors affecting the production capacity of the horizontal furnace. Utility Model Content

[0003] The utility model proposes a horizontal silicon carbide epitaxial furnace upper half moon thermal field structure, which aims to overcome the above-mentioned shortcomings of the existing technology, transform the upper half moon thermal field, reduce the deposition on the lower end face of the upper half moon, extend the maintenance cycle of the horizontal furnace, and improve production capacity.

[0004] The technical solution of the present invention is as follows: a horizontal silicon carbide epitaxial furnace upper half moon heat field structure, the structure of which includes an upper half moon heat field, a chamber where the substrate is located, and a lower half moon heat field, which are arranged in sequence from top to bottom. A number of dense air holes are evenly distributed near the air inlet on the lower end surface of the upper half moon heat field. A partition plate is arranged parallel to the upper bottom of the upper half moon heat field corresponding to the air holes. The end of the conduit for inputting argon gas flow is connected to the side wall of the upper half moon heat field between the air holes and the partition plate. When the horizontal argon gas flow enters the space between the air holes and the partition plate through the conduit, it flows through the air holes to the chamber where the substrate is located to form a dense air curtain, so that the source gas layer participating in the reaction moves downward, thereby reducing the deposition on the lower end surface of the upper half moon heat field. The partition plate can effectively offset the temperature change caused by the air holes, so that the temperature distribution of the upper half moon heat field and the lower half moon heat field is relatively uniform.

[0005] Preferably, the pores have a diameter of 2 mm and are arranged in 4 rows along the width direction of the lower end surface of the upper half of the thermal field.

[0006] Preferably, the partition plate is 2 mm thick and is arranged 15 mm away from the bottom of the upper half of the thermal field.

[0007] Preferably, a mass flow meter is provided on the conduit to precisely control the gas flow in the pores so that the airflow out of the pores flows only along the upper half of the thermal field plane, thus avoiding turbulence in the horizontal working airflow.

[0008] The advantages of the present invention are as follows: the upper half of the moon thermal field has been effectively and reasonably structurally modified, dense small holes are set at the position of the air inlet at the lower end face of the upper half of the moon thermal field, and a partition plate is set at the upper end of the plate where the small holes are located, which can effectively offset the temperature changes caused by the holes, so that the temperature distribution of the upper and lower half of the moon thermal fields is relatively uniform. When the horizontal argon gas enters the space, it will flow through the holes to the chamber where the substrate is located to form a dense air curtain, so that the source gas layer participating in the reaction will flow downward, reducing the deposition on the lower end face of the upper half of the moon thermal field. The preferred mass flow meter can accurately control the gas flow in the small holes, so that the airflow out of the small holes only flows along the upper half of the moon plane, avoiding the turbulence of the horizontal working airflow. It can effectively extend the maintenance cycle of the horizontal furnace and improve the production capacity of the horizontal furnace. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 The utility model is a schematic structural diagram of the upper half-moon thermal field structure of a horizontal silicon carbide epitaxial furnace.

[0010] Figure 2 yes Figure 1 Schematic diagram of the upward-looking structure of the lower end surface of the thermal field in the middle and upper half of the moon.

[0011] In the figure, 1 is the upper half of the moon thermal field, 11 is the air hole, 12 is the partition plate, 2 is the lower half of the moon thermal field, 3 is the conduit, 4 is the substrate, and 5 is the mass flow meter. DETAILED DESCRIPTION

[0012] The present invention will be further described in detail below with reference to the embodiments and specific implementation methods.

[0013] like Figure 1 、 2 As shown, a horizontal silicon carbide epitaxial furnace upper half-moon heat field structure, whose structure includes an upper half-moon heat field 1, a chamber where a substrate 4 is located, and a lower half-moon heat field 2 arranged in sequence from top to bottom. The upper half-moon heat field 1 is modified, and a number of dense air holes 11 are evenly distributed near the air inlet on the lower end surface of the upper half-moon heat field 1. The air holes 1 preferably have an aperture of 2 mm and are distributed in 4 rows along the width direction of the lower end surface of the upper half-moon heat field 1. A partition plate 12 is provided parallel to the bottom of the upper half-moon heat field 1 corresponding to the location of the air holes 1. The partition plate 12 is preferably 2 mm thick and is arranged 15 mm away from the bottom of the upper half-moon heat field 1.

[0014] The provision of the partition plate 12 can effectively offset the temperature change caused by the air hole 1, so that the temperature distribution of the upper half of the thermal field 1 and the lower half of the thermal field 2 is relatively uniform.

[0015] The end of the conduit 3 for inputting the argon gas flow is connected to the side wall of the upper half of the thermal field 1 between the air hole 1 and the partition plate 12.

[0016] When the horizontal argon gas flow enters the space between the air hole 1 and the partition plate 12 through the conduit 3, it can flow through the air hole 1 to the chamber where the substrate 4 is located, forming a dense gas curtain, causing the source gas layer participating in the reaction to flow downward, thereby reducing the deposition on the lower end surface of the upper half of the thermal field 1.

[0017] A mass flow meter 5 is provided on the conduit 3. The gas flow in the pore 1 can be accurately controlled so that the airflow out of the pore 1 only flows along the plane of the upper half of the thermal field 1 to avoid causing turbulence in the horizontal working airflow.

[0018] The components described above are all prior art, and those skilled in the art can use any model and existing design that can achieve their corresponding functions.

[0019] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the creative concept of the present invention, which all fall within the scope of protection of the present invention.

Claims

1. A horizontal silicon carbide epitaxial furnace upper half moon thermal field structure, the structure comprising an upper half moon thermal field (1), a chamber where a substrate (4) is located, and a lower half moon thermal field (2) arranged in sequence from top to bottom, characterized in that: A plurality of dense pores (11) are evenly distributed on the lower end surface of the upper half-moon heat field (1) near the air inlet, and a partition plate (12) is arranged parallel to the upper bottom of the upper half-moon heat field (1) corresponding to the pores (11), and the end of the conduit (3) for inputting argon gas flow is connected to the side wall of the upper half-moon heat field (1) between the pores (11) and the partition plate (12).

2. The upper half-moon thermal field structure of a horizontal silicon carbide epitaxial furnace according to claim 1, characterized in that: The pores (11) have a diameter of 2 mm and are distributed in 4 rows along the width direction of the lower end surface of the upper half of the thermal field (1).

3. The upper half-moon thermal field structure of a horizontal silicon carbide epitaxial furnace according to claim 2, characterized in that: The partition plate (12) has a thickness of 2 mm and is arranged 15 mm from the bottom of the upper half of the thermal field (1).

4. The upper half-moon thermal field structure of a horizontal silicon carbide epitaxial furnace according to any one of claims 1 to 3, characterized in that: The conduit (3) is provided with a mass flow meter (5).

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