Vertical double-wafer 8-inch silicon carbide epitaxial furnace

Abstract

The utility model relates to a vertical double-piece 8-inch silicon carbide epitaxial furnace, which is structurally characterized in that a manipulator and a transfer bin are positioned below an epitaxial furnace body, the epitaxial furnace body comprises a quartz barrel, a quartz square tube for introducing reaction gas is arranged at the top of the quartz barrel, coils are uniformly wound on the side wall of the quartz barrel, a heat insulation layer is arranged on the inner wall of the quartz barrel, and motors are oppositely arranged on two sides of the quartz barrel respectively; the output end of the motor is connected with the outer end of a ceramic rotating shaft, the ceramic rotating shaft sequentially penetrates through the coil, the quartz barrel and the heat preservation layer and extends to the center of the quartz barrel, and a carrying disc for carrying epitaxial wafers is placed at the inner end of the ceramic rotating shaft and placed on a half-moon-shaped thermal field in the center of the quartz barrel. During working, the mechanical arm places the carrying discs with epitaxial wafers on the half-moon-shaped thermal field, and when reaction gas participates in working through the quartz square tube, the motors on the two sides drive the left carrying disc and the right carrying disc to operate synchronously. The utility model has the advantages that the rotating speed of the substrate can be effectively improved, the rotating precision can be accurately controlled, the defects of the epitaxial wafer can be effectively reduced, and the productivity can be multiplied through the one-cavity double-wafer structure.

Description

Technical Field

[0001] The utility model relates to a vertical double-chip 8-inch silicon carbide epitaxial furnace, belonging to the technical field of silicon carbide epitaxial furnaces. Background Art

[0002] Compared with 6-inch, 8-inch silicon carbide wafers have smaller edge loss and larger usable area. The market demand is increasing, and they are produced using 8-inch silicon carbide epitaxial furnaces.

[0003] In the prior art, during the growth of mainstream horizontal silicon carbide epitaxial materials, horizontal airflow will cause a large amount of 3C silicon carbide to be easily deposited on the substrate. As the thickness of the deposited layer increases, it is easy to fall off, resulting in an increase in defects in the silicon carbide epitaxial wafer, which greatly shortens the growth cycle. On the other hand, the horizontal silicon carbide epitaxial equipment realizes substrate rotation by air flotation. This method cannot accurately control the rotation speed, and the actual rotation speed is very low, making it difficult to ensure the uniformity of the silicon carbide epitaxial wafer. Although the existing vertical silicon carbide epitaxial furnace can achieve high-speed growth, it is expensive, and both horizontal and vertical mainstream silicon carbide epitaxial equipment are still mainly single-cavity single-wafer, with low production capacity and unable to meet production needs. Utility Model Content

[0004] The utility model proposes a vertical double-wafer 8-inch silicon carbide epitaxial furnace, which aims to overcome the above-mentioned shortcomings of the prior art, achieve precise control of the rotation progress on the basis of achieving high rotation speed, reduce epitaxial wafer defects, and improve production capacity.

[0005] The technical solution of the utility model is: a vertical double-wafer 8-inch silicon carbide epitaxial furnace, whose structure includes an epitaxial furnace body, a manipulator and a transfer bin, the manipulator and the transfer bin are located below the epitaxial furnace body, the epitaxial furnace body includes a quartz barrel, a quartz square tube is provided on the top of the quartz barrel for the reaction gas to pass through, a coil is evenly wound on the side wall of the quartz barrel, an insulation layer is provided on the inner wall of the quartz barrel, motors are provided on both sides of the quartz barrel respectively, the output end of the motor is connected to the outer end of the ceramic rotating shaft, the ceramic rotating shaft passes through the coil, the quartz barrel and the insulation layer in sequence and extends to the center of the quartz barrel, a carrier plate loaded with epitaxial wafers is placed on the inner end of the ceramic rotating shaft, and the carrier plate is placed on the half-moon-shaped thermal field in the center of the quartz barrel. When working, the manipulator places the carrier plate with the epitaxial wafer on the half-moon-shaped thermal field, and when the reaction gas participates in the work through the quartz square tube, the motors on both sides drive the left and right carrier plates to run synchronously.

[0006] Preferably, one end of the ceramic rotating shaft is conical, and one end of the carrier is provided with a conical notch that matches the shape of the conical end of the ceramic rotating shaft, so that the ceramic rotating shaft and the carrier can be effectively connected and driven to rotate.

[0007] Preferably, the outer side of the ceramic rotating shaft is wrapped with a rotating shaft cylinder, and one end of the rotating shaft cylinder is fixed in the stepped notch of the central boss of the carrier plate, so as to realize the effective connection and fixation between the ceramic rotating shaft and the furnace body.

[0008] Preferably, a ceramic sealing water cooling jacket is provided at the place where the ceramic rotating shaft passes through the quartz barrel, so as to achieve effective sealing of the cavity.

[0009] The advantages of the utility model are as follows: the structural design is reasonable, the substrate rotation speed can be effectively improved, the rotation accuracy can be accurately controlled, and the defects of the epitaxial wafer can be effectively reduced. The one-cavity double-wafer structure can increase the production capacity exponentially, and the cost is low, which is very suitable for promotion and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a structural schematic diagram of a vertical double-chip 8-inch silicon carbide epitaxial furnace of the utility model.

[0011] Figure 2 yes Figure 1 Side sectional view of .

[0012] Figure 3 yes Figure 2 Schematic diagram of the three-dimensional structure of the mid-moon-shaped thermal field.

[0013] In the figure, 1 is the manipulator, 2 is the transfer bin, 3 is the epitaxial wafer, 4 is the carrier, 5 is the half-moon-shaped heat field, 6 is the ceramic rotating shaft, 7 is the insulation layer, 8 is the quartz barrel, 9 is the coil, 10 is the motor, 11 is the ceramic sealed water-cooling jacket, 12 is the quartz square tube, and 13 is the rotating shaft cylinder. DETAILED DESCRIPTION

[0014] The present invention is further described in detail below in conjunction with embodiments and specific implementation methods.

[0015] like Figure 1-3 As shown, a vertical double-wafer 8-inch silicon carbide epitaxial furnace, whose structure includes an epitaxial furnace body, a manipulator 1 and a transfer bin 2, the manipulator 1 and the transfer bin 2 are located below the epitaxial furnace body, the epitaxial furnace body includes a quartz barrel 8, a quartz square tube 12 is provided on the top of the quartz barrel 8 for the reaction gas to pass through, a coil 9 is evenly wound on the side wall of the quartz barrel 8, an insulation layer 7 is provided on the inner wall of the quartz barrel 8, motors 10 are respectively provided on both sides of the quartz barrel 8, the output end of the motor 10 is connected to the outer end of the ceramic rotating shaft 6, the ceramic rotating shaft 6 passes through the coil 9, the quartz barrel 8 and the insulation layer 7 in sequence and extends to the center of the quartz barrel 8, a carrier 4 loaded with epitaxial wafers 3 is placed on the inner end of the ceramic rotating shaft 6, and the carrier 4 is placed on the half-moon-shaped heat field 5 in the center of the quartz barrel 8.

[0016] One end of the ceramic rotating shaft 6 is tapered, and one end of the carrier plate 4 is provided with a tapered notch that matches the shape of the tapered end of the ceramic rotating shaft 6 .

[0017] The outer side of the ceramic rotating shaft 6 is wrapped with a rotating shaft cylinder 13 , and one end of the rotating shaft cylinder 13 is installed and fixed in the groove with a step of the central boss of the carrier plate 4 .

[0018] A ceramic sealing water cooling jacket 11 is provided at the place where the ceramic rotating shaft 6 passes through the quartz barrel 8, so that the cavity can be sealed.

[0019] According to the above structure, during operation, the carrier 4 with the epitaxial wafer 3 is placed on the half-moon-shaped heat field 5 by the manipulator 1, the center of the carrier 4 is fixedly installed on the rotating shaft cylinder 13, the end of the ceramic rotating shaft 6 is adapted to be connected with the end of the carrier 4, and when the reaction gas participates in the work through the quartz square tube 12, the motors 10 on both sides drive the left and right carriers 4 to run synchronously, and the speed can preferably reach 400r / min.

[0020] All the components mentioned above are prior art, and those skilled in the art can use any model and existing design that can achieve their corresponding functions.

[0021] The above is only a preferred embodiment of the present invention. It should be pointed out that a person skilled in the art can make several modifications and improvements without departing from the inventive concept of the present invention, and these modifications and improvements all fall within the protection scope of the present invention.

Claims

1. A vertical double-chip 8-inch silicon carbide epitaxial furnace, characterized in that: The invention comprises an epitaxial furnace body, a manipulator (1) and a transfer chamber (2), wherein the manipulator (1) and the transfer chamber (2) are located below the epitaxial furnace body, and the epitaxial furnace body comprises a quartz barrel (8), a quartz square tube (12) for the reaction gas to pass through is arranged on the top of the quartz barrel (8), a coil (9) is evenly wound on the side wall of the quartz barrel (8), a heat preservation layer (7) is arranged on the inner wall of the quartz barrel (8), motors (10) are arranged oppositely on both sides of the quartz barrel (8), the output end of the motor (10) is connected to the outer end of a ceramic rotating shaft (6), the ceramic rotating shaft (6) passes through the coil (9), the quartz barrel (8) and the heat preservation layer (7) in sequence and extends to the center of the quartz barrel (8), and a carrier (4) for loading an epitaxial wafer (3) is placed on the inner end of the ceramic rotating shaft (6), and the carrier (4) is placed on a half-moon-shaped heat field (5) at the center of the quartz barrel (8).

2. A vertical double-chip 8-inch silicon carbide epitaxial furnace as claimed in claim 1, characterized in that: One end of the ceramic rotating shaft (6) is conical, and one end of the carrier plate (4) is provided with a conical notch that matches the shape of the conical end of the ceramic rotating shaft (6).

3. A vertical double-chip 8-inch silicon carbide epitaxial furnace as claimed in claim 1, characterized in that: The ceramic rotating shaft (6) is wrapped with a rotating shaft cylinder (13) on the outside, and one end of the rotating shaft cylinder (13) is installed and fixed in a groove with a step on the central boss of the carrier (4).

4. A vertical double-chip 8-inch silicon carbide epitaxial furnace as claimed in claim 1, characterized in that: A ceramic sealing water cooling jacket (11) is provided at the location where the ceramic rotating shaft (6) passes through the quartz barrel (8).

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